Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

BI 2 :
MCH KHUCH I DNG
TRANSISTOR LNG CC (BJT)
MC CH TH NGHIM
Gip sinh vin bng thc nghim kho st cc vn chnh sau y :
1. Vn phn cc DC CE/BJT-(NPN-PNP) : Xc nh im lm vic tnh Q(VCEQ, ICQ)
trn h c tuyn ngIra
, h s khuch i dng .
C = f ( VCE ) I B = const
2. Kho st mch khuch i AC ghp RC dng CE, CC, CB/BJT-NPN :
a. Kho st mch khuch i AC CE/BJT-NPN dy tn gia (Midrange) : Xc nh Av,
lch pha .
b. Kho st p ng tn s thp ca mch khuch i AC CE/BJT-NPN : v biu
Bode quan h Bin tn s Av(f), Pha tn s (f), xc nh tn s ct di
fCl = min(fCL1, fCL2) ca mch khuch i vi gi thit t CE bypass hon ton.
3. Kho st mch khuch i ghp kiu Darlington.

THIT B S DNG
B th nghim ATS-11 v Module th nghim AM-102B.
Dao ng k, ng h VOM v dy ni.

PHN I :

C S L THUYT

Phn ny nhm tm lc nhng vn l thuyt tht cn thit phc v cho bi th nghim v

cc cu hi chun b sinh vin phi c k v tr li trc nh.

I.1.
E

CU TO TRANSISTOR

+ -

VCB

IC

IE

IB

IE = I B + IC

IC

(a) BJT- PNP

I.2.

+
VCB

VBE
VBE : phn cc
thun mi ni
B-E

VCB : phn cc
nghch mi
ni B-C

B
E

+ -

VBE
VBE : phn cc
thun mi ni
B-E
C

VCB : phn cc
nghch mi
ni B-C
C

B
IB

IE

Hnh 2-1

E
(b) BJT - NPN

TRNG THI HOT NG CA TRANSISTOR

Ty mc phn cc m transistor c th lm vic mt trong ba trng thi :

a. Trng thi ngng dn :
Nu BJT c phn cc vi mi ni BE phn cc nghch VBE < V (VBE = 0 0,4V)
th BJT ngng dn: dng IB = 0, IC = 0, v VCE VCC.

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

b. Trng thi khuch i :

Nu BJT c phn cc vi mi ni BE phn cc thun VBE = 0,5 0,7V v BC

c phn cc nghch th BJT dn in: dng IC tng theo IB (IC = IB)
c. Trng thi bo ha :

Nu BJT c phn cc vi mi ni BE v BC phn cc thun , th transistor dn

bo ha: lc IC khng tng (IC < IB) v in th VCE gim cn rt nh gi l
VCE bo ha (VCEsat 0,2V).

I.3.

KHUCH I AC BJT DY TN GIA

I.3.1. MCH KHUCH I BJT GHP KIU CE:

VCC

VCC

Rc
Rb1

C2

Rc

C1

Rb1
Vo

RL

Vi

Rb2

Re

Ce

Rb2

Re

Hnh 2.2a. Dng mch CE

Hnh 2.2b. Mch tng ng DC

:
biu din ti c nhn bi b khuch i.
RL
RB1, RB2, RC v RE : cung cp phn cc DC BJT hot ng trong min tuyn tnh.
I.3.1.A.

Kho st DC:

Rb 2
VCC
Rb1 + Rb 2
VBB VBE
=
RBB + (1 + ) Re

Rb1 .Rb 2
Rb1 + Rb 2

VBB =

R BB =

IB

I E I C = I B

hie = 25 mV

h fe

I C (mA)
I.3.1.B.
Kho st AC:
c mch tng ng (Hnh 1c.) cn bit nh sau :
Bt k node no m in p ti ng bng hng s (constant) th c coi nh ni
t v mc AC. Ni tr ca tt c cc ngun cung cp c gi thit b qua, khng ng k
so vi cc thng s ca mch Do , cc node ngun cung cp c ni t v mt AC.
Cc t C1, C2, CE hot ng ngn mch (short circuits) ti cc tn s thuc dy gia
(midrange). Gi nh ny xc nh min dy gia.
Cc in dung dy ni v ca linh kin c tc dng h mch (open circuits) ti cc
tn s thuc dy gia.
Ng vo ca BJT c xem nh mt diode c in tr AC l hie. Dng base ib chy
vo trong linh kin. Ng ra ca BIT c xem nh mt ngun dng ic = hfe.ib vi in tr ra
l 1/hoe

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

Zi

Zo

Vo

Vi

1/hoe
Rb1//Rb2

hie

Rc

RL

ic =
hfeib

Hnh 2.2c. Mch tng ng AC dy tn gia

Cc thng s ca mch khuch i:

Z i = Rb1 // Rb 2 // hie hie
Z o = (1 / hoe ) // RC RC

i
i i
(1 / h0 e ) // RC Rb1 // Rb 2

Ai = o = o b = h fe
ii ib ii
(1 / h0e ) // RC + RL Rb1 // Rb 2 + hie
1 ( Rb1 // Rb 2 // hie )
v
v i v
Av = o = o b . b = h fe .((1 / h0 e ) // RC // RL ) .

vi
ib v b v i
hie ( Rb1 // Rb 2 // hie ) + Ri

h fe ( Rb1 // Rb 2 // hie ).[(1 / h0 e ) // RC // RL ]

hie
( Rb1 // Rb 2 // hie + Ri )

Trong
trng hp : Rb1 v Rb2 >> hie, (1/hoe) v RL >> RC :

A v h fe

RC
R i + h ie

Vy: Mch CE c chc nng khuch i dng v khuch i p.

Chin lc thit k mch khuch i AC vi li Av theo yu cu c th c thc
hin da vo biu thc ca Av. Trc tin, thng qua vic n nh im lm vic tnh Q (ICQ,
VCEQ) trn h c tuyn ng ra ic = f(vce), ta xc nh c cc gi tr RB1, RB2, RC. i vi
mt linh kin BJT cho (xc nh c hfe v (1/hoe)) th li ca b khuch i s ph
thuc vo RC v Ri. Nu RC c cho th li c th c hiu chnh bng cch thay i
Ri.

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

I.3.2. MCH KHUCH I BJT GHP KIU CC:

VCC

VCC

Rb1
C1
+

Ri

C2

R
BB

Vo

Vi

Rb3

Rb2

BB

Re

Hnh 2-3a : Mch khuch i ghp CC

Ri

Re

Hnh 2-3b : Mch tng ng AC

c thm vo kim sot dng in ng vo t ngun v1.

I.3.2.A.

Kho st DC:

Rb 2
VCC
Rb1 + Rb 2
VBB VBE
=
RBB + (1 + ) Re

V BB =

R BB = Rb1 // Rb 2 + Rb 3

IB

I E I C = I B

hie = 25 mV

I.3.2.B.

Zi

Vi

Ri

h fe
I C (mA)
ib

hie

Vo

Re.hfe

RBB

Zo

Hnh 2-3c : Mch tng ng tn hiu nh

Kho st AC:

Z i = Ri + RBB //( hie + Re. .h fe )

hie + ( Ri // R BB )
h fe
v o v o ib v b
Av =
= . = Re .h fe
vi
ib v b v i

Z o = Re //

: rt ln
: rt nh

] h

ie

R BB //( hie + Re .h fe )
1
1
.
+ Re .h fe RBB //( hie + Re .h fe ) + Ri

Vy: Mch CC khng c chc nng khuch i p. Mch CC c tng tr vo ln,

tng tr ra nh, thng c dng phi hp tr khng gia cc tng khuch i.

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

I.3.3. MCH KHUCH I BJT GHP KIU CB:

VCC
VCC

C1

Rb1

Rc

C2

Rb1

Rc

Vo

Vi

Re

RL

Rb2

Cb

Rb2

Re

0
0

Hnh 2-4a : Mch khuch i ghp CB

Hnh 2-4b : Mch tng ng DC

I.3.3.A.

Kho st DC: Tng t nh mch CE

I.3.3.B.

Kho st AC:
Zi

ii
Vi

ie

Zo

Vo

io
1/hob

Re

hib

Rc

hfb.ie

Hnh 2-4c : Mch tng ng tn hiu nh

Z i = Re // hib hib
Z o = 1 / hob // RC
1 // R

C
i o io i e
hob
. Re h 1
Ai = = = h fb
fb

1
ii i e ii
// RC + RL Re + hib
hob

1
v o v o ie
= = h fb ( 1 // RC // R L ).
Av =
hob
h
vi
ie vi
ib
Vy: Mch CB khng c chc nng khuch i dng.

RL

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

PHN II :

TIN TRNH TH NGHIM

Sau khi hiu k nhng vn l thuyt c nhc li v nhn mnh PHN I, phn ny
bao gm trnh t cc bc phi tin hnh ti phng th nghim.
Nh vy, SV cn thc hin, mc mch, o c, hiu k v ghi nhn kt qu. Sau mi bi th
nghim, GV hng dn s kim tra v nh gi kt qu th nghim ca SV.

II.1. PHN CC BJT NPN (Mch A2-1)

II.1.1 S ni dy: (hnh 2-1)
Cp ngun +12V ca ngun DC POWER SUPPLY cho mch A2-1
cht +12V
- Cht +12V ca mch
cht GND ca ngun DC POWER SUPPLY.
- Cht GND ca mch
Ngn mch cc mA k.
Kho st BJT NPN C1815.

Hnh 2-1: Phn cc mch khuch i CE dng BJT-NPN (Mch A2-1)

II.1.2 Cc bc th nghim :
1. Chnh bin tr P1 VCE c cc gi tr theo bng A2-1. o in p ri trn R2 (VR2),
ghi vo Bng A2-1. Tnh IB, IC, v h s khuch i dng .
Bng A2- 1
in p VCE
[v]
VCC
= 5.5 V 6.5V
= 0.1 0.2V

Thng s
cn o
VR2 [V]

Thng s tnh ton

IB =

VR 2
V VCE
[A] I C = CC
[A]
R2
R 3 + P2

Nhn xt

= hfe
= Ic / Ib

Trng thi hot ng ca BJT

(Ngng dn, Khuch i, Bo ha)

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

2.

Cho bit im lm vic tnh Q trong c 3 trng hp phn cc nu trn ca BJT:

Q(ICQ, VCEQ)

Trng thi lm vic

Q1
Q2
Q3

II.2. PHN CC BJT PNP (Mch A2-2)

II.2.1 S ni dy: (hnh 2-2)

Cp ngun -12V ca ngun DC POWER SUPPLY cho mch A2-2

- Cht -12V ca mch cht -12V
- Cht GND ca mch cht GND ca ngun DC POWER SUPPLY.
Ngn mch cc mA k.
Kho st BJT PNP A1015.

Hnh 2-2: Phn cc mch khuch i CE dng BJT-PNP (Mch A2-2)

II.2.2 Cc bc th nghim :

1. Chnh bin tr P1 VCE c cc gi tr theo bng A2-2. o in p ri trn R2 (VR2)

ghi vo Bng A2-2. Tnh IB, IC, v h s khuch i dng .
Bng A2-2
in p VCE
[V]
-12V
-5.5 -6.5V
-0.1 -0.2V

Thng s
cn o
VR2 [V]

Thng s tnh ton

Nhn xt

= hfe
V VCE
V
I B = R 2 [A] I C = CC
[ A ] = Ic / Ib
R2
R 3 + P2

Trng thi hot ng ca BJT

(Ngng dn, Khuch i, Bo ha)

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

2. Cho bit im lm vic tnh Q trong c 3 trng hp phn cc nu trn ca BJT :

Q1(ICQ, VCEQ)

Trng thi lm vic

Q1(ICQ1, VCEQ1)
Q2(ICQ2, VCEQ2)
Q3(ICQ3, VCEQ3)

II.3. MCH KHUCH I GHP CE (Mch A2-3)

II.3.1 Kho st DC :
II.3.1.A
S ni dy: (hnh 2-3)
Cp ngun +12V ca ngun DC POWER SUPPLY cho mch A2-3
A

Hnh 2-3: Khuch i xoay chiu (AC) ghp CE dng BJT-NPN (Mch A2-3)

II.3.1.B
Cc bc th nghim:
1. Xc nh im lm vic tnh Q(ICQ, VCEQ) ca mch :
- o in p ti im A :
VA
= ........................................................
o
in
p
V
CEQ = ........................................................
- Tnh dng :
VA VCEQ
= ------------------I CQ =
R4 + R5
-

im lm vic tnh Q(ICQ, VCEQ) = ...............................................................

2. Cho bit trng thi hot ng ca BJT :
.

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

II.3.2 Kho st c tnh khuch i AC dy tn gia : (Vn mch A2-3)

II.3.2.A
S ni dy:
Vn cp ngun +12V ngun DC POWER SUPPLY cho mch A2-3
Dng thm tn hiu t my pht tn hiu Function Generator trn thit b ATS
a tn hiu AC n ng vo IN ca mch khuch i. V chnh my pht tn
hiu : - t ch (Function) ti v tr : Sine
- Chnh bin tr Amplitude c gi tr in p nh nh VIN(p-p) =
30mV
- Tn s 1Khz: Range : t ti v tr : x1K
Frequency : V tr ph hp.
Ni ng ra OUT ca my pht n ng vo IN ca mch.

Dng dao ng k quan st tn hiu in p ng IN vo v ng ra OUT.

II.3.2.B
Cc bc th nghim:
1. o cc gi tr VIN, VOUT, tnh Av. Ghi kt qa vo bng A2-3
2. o lch pha gia tn hiu ng vo VIN v tn hiu ng ra VOUT
Bng A2-3
Thng s cn o
Tr s in p vo VIN (p-p) = 30 mV
Bin VOUT (p-p)
VOUT(p-p)
li in p Av =
VIN(p-p)
lch pha

3.

Quan st trn dao ng k v v trn cng mt h trc ta dng tn hiu

in p ng vo (VIN) v tn hiu in p ng ra (VOUT)

4.

Da vo trng thi hot ng khuch i ca BJT bng A2-1 v A2-3,

nu nhn xt v cc c trng ca mch khuch i CE (v h s khuch
i dng , h s khuch i p Av, lch pha )
....................................................................................................................................
....................................................................................................................................

II.3.3 Kho st p ng tn s ca mch khuch i : Vn mch A2-3

II.3.3.A
S ni dy:
Cp ngun +12V t ngun DC POWER SUPPLY cho mch A2-3

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

Dng tn hiu AC t my pht tn hiu a n ng vo IN ca mch v chnh

my pht c : Sng Sin, f = 1Khz., VIN (pp) = 30mV
Dng dao ng k quan st tn hiu in p ng vo v ng ra.
II.3.3.B
Cc bc th nghim:
1. c bin nh - nh VOUT(pp) ti ng ra. Ghi nhn li Av ti f = 1KHz :
li in p Av =

VOUT(p-p)
VIN(p-p)

2. Gi nguyn bin in p tn hiu vo VIN (pp) = 30mV (Khng chnh

Amplitude). Thay i tn s my pht sng (bng Frequency v Range) theo
Bng A2- 4. o bin nh - nh ti ng ra VOUT(pp), ghi nhn li Av
ti cc tn s kho st.
Bng A2- 4
Tn s
100Hz 200Hz 1Khz
10Khz 20Khz 50Khz 100Khz
Bin VOUT (p-p) (V)
Av
3. V biu Boode th hin quan h Bin Tn s theo Bng A2-4 (Av
theo tn s f)

|AV |

f (Hz)
O
Xc nh tn s ct di theo thc nghim :

fCL =

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

II.4. MCH KHUCH I GHP CC (Mch A2-4)

II.4.1 S ni dy: (Hnh 2-4)
Cp ngun +12V cho mch A2-4

Hnh 2-4: Khuch i ghp CC (Mch A2-4)

II.4.2 Kho st ch DC :
II.4.2A Ch dng 1 BJT (T1- NPN C1815) - Ti R5 =100
1/ S ni dy: Ngn mch J1 v J5, kho st ring Transistor T1 vi ti ng
ra R5 = 100.
2/ Cc bc th nghim:
a. Chnh bin tr P1 c cc gi tr in p ri trn R2 (VR2) nh Bng A2-5. o
in p trn ti ng ra VR5, tnh h s khuch i dng .
Bng A2-5.
Thng s cn o
VR2 [V]
VOUT [V]

0,05V

Thng s tnh ton

V
I B = R 2 [A]
R2

IC =

VR 5
[ A]
R5

= hfe = Ic / Ib

0,1V

b. Da vo kt qa bng A2- 4, nhn xt g v h s khuch i dng in ca

mch ghp CC vi mch ghp CE (Cng dng chung mt loi BJT C1815NPN) phn th nghim II.1 bng A2-1 (khi BJT hot ng ch khuch
i):
...................................................................................................................................
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II.4.2B Ghp Darlington 2 BJT (T1- NPN C1815 v T2NPN H1061) - Ti R5=
100
1/ S ni dy: Vn mch A2-4
Tho J1, vn gi ngn mch J5, ngn mch thm J2 , J3 s dng cch ghp
Darlington hai BJT T1 v T2.

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

2/ Cc bc th nghim:
a. Chnh bin tr P1 c cc gi tr in p trn R2 (VR2) theo Bng A2-6. o
in p trn ti ng ra VR5, tnh h s khuch i dng .
Bng A2-6
Thng s cn o
VR2 [V]
VR5 [V]

Thng s tnh ton

IB =

VR 2
[A]
R2

IC =

VR 5
[ A]
R5

= hfe = Ic / Ib

0,05V
0,1V

b. Trn c s o h s khuch i dng , so snh kt qu o gia tng lp li

n bng A2-5 v tng lp li Darlington ca bng A2-6. Gii thch s khc
nhau v 2 cch ghp ny :
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II.4.3 Kho st ch AC :

Chun b my pht tn hiu ( FUNCTION GENERATOR)

- Ch my pht ( FUNCTION) : Sng= sine, f= 1Khz,VIN(p-p) = 100mV
- Ni ng ra OUT ca my pht n ng vo IN ca mch
II.4.3A Ch dng 1 BJT (T1- NPN C1815) - Ti R5 =100 :
1.
S ni dy: Mc mch ghp CC dng 1 BJT nh mc II.4.2A
2.
Cc bc th nghim:
a. o cc gi tr VOUT, lch pha ghi vo bng A2-7, tnh Av.
Thng s cn o
VOUT
li in p Av =
lch pha

VOUT(p-p)
VIN(p-p)

Bng A2-7
Tr s in p vo VIN (p-p) = 100 mV

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

b. Quan st trn dao ng k v v trn cng mt h trc ta dng tn hiu in

p ng vo (VIN) v tn hiu in p ng ra (VOUT) ) (ch bin v pha) :

c. Gi nguyn bin v tn s ng vo. Thay ti R5 bng cc ti R4 v R6, xc

nh VOUT. Tnh h s khuch i Av khi dng cc ti khc nhau, ghi kt qu
vo bng A2-8 . Kt lun v vai tr tng m CC ?

Bng A2-8

Ti

VIN (p-p)

VOUT (p-p)

li in p Av

R4 =1K
R5 = 100
R6 = 5,1K
d. Nhn xt v cc c trng ca mch khuch i CC (v h s khuch i dng
, h s khuch i p Av, lch pha )
...................................................................................................................................
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Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

II.4.3B Ghp Darlington 2 BJT (T1- NPN C1815 v T2 NPN C1061) - Ti 100
1.
S ni dy: Mc mch ghp Darlington 2 BJT T1 v T2 nh mc II.4.2B
2.
Cc bc th nghim:
a. Ni ng ra OUT ca my pht vi ng vo (A) ca mch A2-4B. Bin my
pht VIN(p-p) = 100mV, f= 1Khz.
b. o cc gi tr VOUT, lch pha ghi vo bng A2-9, tnh Av.
Bng A2-9
Thng s cn o
Tr s in p vo VIN (p-p) = 100 mV
VOUT
VOUT(p-p)
li in p Av =
VIN(p-p)
lch pha

c. Quan st trn dao ng k v v trn cng mt h trc ta dng tn hiu in

p ng vo (VIN) v tn hiu in p ng ra (VOUT) ) (ch bin v pha) :

Trn c s o h s khuch i dng v h s khuch i th, so snh kt qu o

gia tng lp li n v tng lp li Darlington.
...................................................................................................................................
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Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

II.5. MCH KHUCH I GHP CB (Mch A2-5)

II.5.1 S ni dy: (Hnh 2-5)
Cp ngun +12V cho mch A2-5
Ngn mch cc mA k.

Hnh 2-5: Khuch i ghp CB (Mch A2-5)

II.5.2 o h s truyn dng :

1. Vn bin tr P1 dng emitter - Ie ng vi cc gi tr cho trong bng A2-10.
Ghi gi tr dng collector - Ic vo bng.
Bng A2-10

Dng Ie /T1 (Chnh P1)

Dng Ic / T1

Ie1 = 1mA

Ic1 = mA

Ie2 = 2 mA

Ic2 = ..mA

2. Tnh h s truyn dng: = (Ic2 - Ic1) / (Ie2 - Ie1) =

II.5.3 Kho st ch AC :

Chun b my pht tn hiu ( FUNCTION GENERATOR)

- Ch my pht ( FUNCTION) : Sng= Sin, f= 1Khz,VIN(p-p) = 30mV
- Ni ng ra OUT ca my pht n ng vo IN ca mch
1. o cc gi tr VOUT, lch pha ghi vo bng A2-11, tnh Av.
Thng s cn o
VOUT
li in p Av =
lch pha

VOUT(p-p)
VIN(p-p)

Bng A2-11
Tr s in p vo VIN (p-p) = 100 mV

Bi 2 : Mch Khuch i Dng Transistor Lng Cc (BJT)

2. Quan st trn dao ng k v v trn cng mt h trc ta dng tn hiu in

p ng vo (VIN) v tn hiu in p ng ra (VOUT) ) (ch bin v pha) :

3. Ni J4 , o bin xung ra. Tnh h s khuch i Av khi c ti (Ura c ni J4)

v khi khng c ti (Ura khng ni J6), ghi kt qu vo bng A2-12 .
Bng A2-12

Ti

VIN (p-p)

VOUT (p-p)

li in p Av

Khng ni J4
Ni J4
4. So snh s mt mt bin xung khi ni cht ti cho 3 b khuch i emitter
chung, collector chung v base chung. Kt lun s b v kh nng ng dng
ca mi loi.
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