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CU KIN IN T
( PHN TR LI & BI GII CA SINH VIN )
-1-
Lu :
Mi sinh vin hy t tr li cu hi v lm bi tp trc tip vo ti liu ny
(bn cng trn kh giy A4). Khng sao chp bi gii ca ngi khc.
i vi phn cu hi trc nghim, SV lm bi cn suy ngh tht k trc khi
chn bng cch khoanh trn hoc nh du vo ngay trc mt phng
n ng nht, v gii thch ngn gn vo phn trng bn cnh hoc pha di
mi cu hi. i vi cc bi tp, hy ghi li gii vo ngay phn trng tng
ng mi bi tp.
Ti liu tham kho:
- Bi ging Cu kin in t. (2001) [D Quang Bnh].
- Fundamentals of Linear Electronics Integrated and Dicrete. (1998).
[James Cox ].
- a ch lin h khi cn: Thy D Quang Bnh, 0905894666, hoc: Email:
binhduquang@.gmail.com
Thi hn hon thnh v np bi tp: . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ti bm: in t, Khoa in t-Vin thng, Trng i hc Bch Khoa
Nng 54 Nguyn Lng Bng, Qun Lin Chiu, Tp Nng. (khng chp
nhn s chm tr).
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A. Cu hi v diode.
1.1. Gii thiu v diode.
1. K hiu mch ca diode l . . . .
1.2. Cu to ca diode.
3. S lng in t ho tr trong cc vt liu dn in tt thng c . . . .
a. 1;
b. 4;
c. 8;
d. 16.
4. Lin kt ng ho tr l . . .
a. lin kt c s dng kt ni hai in cc n tip gip PN;
b. s phn chia cc in t trong cu trc tinh th;
c. hot ng xy ra khi vt liu thun v vt liu ngoi lai kt hp vi nhau;
d. khng phi cc trng hp trn.
5. Ht ti in a s trong vt liu bn dn tp - P l . . . .
a. cc neutron (ht trung ho);
b. cc in t;
c. cc l trng;
d. cc ion.
6. Khi tip gip PN c phn cc ngc, th s c . . . . . . . . c to thnh chn dng in.
a. in p chn;
b. vng ngho;
c. vng tp cht;
d. dng
ngc.
7. Khi tip gip PN c phn cc thun, cc in t s kt hp vi . . . . . ti tip gip c
dng in.
a. cc in t;
b. cc ion;
c. cc ht trung ha [neutron];
d. cc l trng.
8. in p ro chn [barrier voltage] ca diode tip gip PN bng Silicon vo khong . . . .
a. 0,1V;
b. 0,3V;
c. 0,7V;
d. 1,5V.
-1-
c. ghim;
d. bin p im gia.
d. bin p im gia.
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20. Khi tho mt diode ra khi mch v kim tra diode bng mt vn nng s [DMM]. ng h
ch th 0,636V khi c phn cc thun v qu thang o khi c phn cc ngc. C h
hng no vi diode ?
a. Diode b h mch;
b. Diode b ngn mch;
c. Diode hot ng bnh thng.
21. Khi tho mt diode ra khi mch v kim tra diode bng mt vn nng s [DMM]. S ch th
trn ng h l 0,636V khi c phn cc thun v 0,752V khi c phn cc ngc. C h
hng no vi diode ?
a. Diode b h mch;
b. Diode b ngn mch;
c. Diode hot ng bnh thng.
22. Mch hnh 1.70, c tn hiu vo l sng sin. Diode D1 h mch. Dng sng ti u ra l
dng sng no di y ?
23. Mch hnh 1.70, c tn hiu vo l sng sin. Diode D1 ngn mch. Dng sng ra l dng
sng no di y ?
24. Mch hnh 1.71, c tn hiu vo l sng sin. Diode D1 h mch. Dng sng ra l . . . . .
25. Mch hnh 1.71, c tn hiu vo l sng sin. Diode D2 h mch. Dng sng ra l . . . . .
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26. Mch hnh 1.72, c tn hiu t vo u vo l sng sin, 50Vnh. Dng sng ra l . . . . .
27. Mch hnh 1.72, c tn hiu vo l sng sin, 35Vhiu dng. Dng sng ra l . . . . . . . .
28. Mch hnh 1.73, c tn hiu vo l sng vung, 20Vnh - nh (+ 10V n - 10V). T in C1
b ngn mch. Dng sng ra l . . . . .
B. Bi tp chng diode.
1. Nu t ngun dc l 18V vo mch, th mc in p ch th trn ng h o trong mch hnh
1.74a l bao nhiu? . . . . . . . . . .
v mch hnh 1.74b l bao nhiu? . . . . . . . . .
-4-
3. Mc cng sut tiu tn diode D1 trong mch hnh 1.76a l bao nhiu ?
PD = . . . . .
v mch hnh 1.76b l bao nhiu ? PD = . . . . . . .
-5-
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13. Hy tnh cng sut tiu tn bi mch chnh lu cu khi mch chnh lu cung cp mc dng
l 5A.
14. Hy tnh cng sut tiu tn bi mch chnh lu ton k dng bin p im gia khi mch
chnh lu cung cp mc dng l 5A.
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C. Cu hi v cc diode c bit.
2.1. Diode Zener:
1. Diode Zener thng lm vic ch :
a. Phn cc thun;
c. Khng phn cc;
b. Phn cc ngc;
d. Phn cc bng in tr.
2.3. B bo v qu in p.
7. Cc xung in p c th pht sinh trn ngun in li l do . . .
a. cc thay i v nh sng;
b. cc ngun m thanh;
c. chp, st;
d. tt c cc trng hp trn.
8. B trit in p qu - TVS c cu trc c bn nh . . .
a. diode silicon;
b. in tr than;
c. t in phn;
d. diode zener.
d. lm lnh.
d. c a v b.
d. 2V.
d. 2V.
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D. Bi tp v cc diode c bit.
1. V v ghi mc in p dng sng ra (TP1 ) cho mch hnh 2.32.
2. Mc cng sut tiu tn trn diode zener hnh 2.32, l bao nhiu ?
3. Nu gim RL trong mch hnh 2.32, dng ti s tng ln. Hy xc nh dng ti ln nht c th
c cung cp khi mch khng cn n nh in p.
7. Cho mch hnh 2.33, nu in p vo Vvo = 25V, R1 = 1k, v VZ = 9V, tnh cng sut tiu
tn ca zener khi (a) RL = 1k , v (b) RL = 10k .
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9. Mc cng sut tiu tn ca mt diode zener 9,1V l bao nhiu khi mc dng chy qua zener
theo chiu phn cc thun l 100mA ?.
10. Mc cng sut tiu tn ca mt diode Zener 9,1V l bao nhiu khi mc dng chy qua zener
theo chiu phn cc ngc ?.
12. Diode bin dung hnh 2.35, c in dung l 200pF khi in p phn cc ngc l 4V. Ti
tn s no ca V1 mch hnh 2.35 c mc in p tn hiu ra ln nht ?.
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13. Nu ngun cung cp mt chiu 4VDC mch hnh 2.35 c iu chnh ln 8VDC, th ti
tn s no ca V1 mch c mc tn hiu ra ln nht ? (xem c tuyn hnh 2.12).
-14-
17. Tnh mc dng chy qua cc on LED dn in trong mch hnh 2.37.
19. V mch, cc tr s linh kin ca mch ca mt LED c ni vi ngun 12V LED pht
sng. Dng chy qua LED c gii hn mc 25mA.
-15-
D1.2 Mch hnh 1.31S, dng chnh lu sng sin c 100Vrms v tn s 60Hz. Mc in p ra
nh nht khng th gim di 70V v t s bin p l 1:2. in tr ti l 2k. Tnh in dung
cn thit ca t lc mc song song vi RL. (s: 8,25F).
D1.4 Mch chnh lu ton k nh mch hnh 1.31S, c bin p vi t s vng dy l 5:1.
a) Tnh tr s in dung ca t cn duy tr mc in p nh nht khong 10V trn ti 100.
(s:233F)
b) Nu in p tn hiu vo phn a) thay i trong khong t 110V n 120V rms, tn s
60Hz, th tr s in dung cn thit l bao nhiu ?
(s: 233F).
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D1.5 Mt mch n nh bng diode Zener (hnh 1.37S) c in p u vo thay i trong khong
t 10V n 15V v mc dng ti thay i trong khong t 100mA n 500mA.
a) Tnh tr s ca Ri v IZmax, bit rng mch s dng diode zener 6V.
(s: 6,33; 1,32A).
b) Hy tnh cng sut nh mc cho diode zener v in tr vo (Ri).
(s: 7,92W; 12,8W).
c) Hy tnh tr s ca t cn thit nu mc ngun l u ra ca mch nn bn k vi tn hiu
vo
l 60Hz.
(s: 4731F).
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1.1 Xc nh dng sng ra ca mch hnh P1.1, khi tn hiu vo vS l dng sng vung i
xng bin nh nh l 100V, c chu k l 2s. Gi thit rng diode l l tng.
1.3 Xc nh dng sng ra ca mch hnh P1.3, khi vS l sng sin 100V nh nh, c chu k
l 2s. Gi s diode l l tng, v C = 0.
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1.4 V c tuyn ID theo VD cho mt diode silicon nu dng bo ha ngc IS = 0,1A, s dng
n = 1,5 i vi silicon. Xc nh mc in p chuyn sang dn ca diode.
1.7 Cho mch hnh 1.4, hy xc nh mc dng chy qua diode khi st p dc trn diode l
0,6V i vi di dng ny v nVT = 40mV.
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1.15 Mch n nh bng zener nh hnh P1.6, s dng diode zener 20V duy tr in p
khng i 20V trn in tr ti RL. Nu in p vo thay i t 32V n 43V v dng ti bin
thin t 200mA n 400mA, hy tnh chn tr s ca Ri gi in p khng i trn ti. Xc
nh cng sut nh mc cn thit cho in tr v diode zener.
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1.19 Thit k b ngun n p ton k s dng bin p im gia 4:1 v diode zener 8V, 1W
cung cp 8V khng i cho ti thay i t 200 n 500 . in p vo ca bin p l 120Vrms,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
a) IZmax v IZmin. b) Ri v VSmin. c) tr s t cn thit. d) n nh theo % khi RZ = 2 .
1.20 Thit k b ngun n p ton k s dng bin p im gia 5:1 v diode zener 8V, 2W
cung cp 8V khng i cho ti thay i t 100 n 500 . in p vo ca bin p l 120Vrms,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
a) IZmax v IZmin. b) Ri v VSmin. c) tr s t cn thit. d) n nh theo % khi RZ = 2 . e)
Cng
sut nh mc ca Ri.
-25-
1.22 S dng mch hnh P1.8, v gi s khng c tn hao cc diode nn, tr s ca Ri l bao
nhiu duy tr 12V trn ti bng cch s dng diode zener 12V, khi VS t 105Vrms n 120Vrms,
60Hz ? in p ra ca mch nn gim 20% do thng s ca t C1, v ti thay i t 50mA n
500mA. Thng s ca t l bao nhiu ? cho n = 2.
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1.26 Thit k mt mch xn nhn c dng sng ra nh hnh P1.13, t dng sng vung
i xng u vo l 10V. Gi s V = 0,7V.
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1.27 Kiu mch xn nh th no cn phi c nhn c cc dng sng cho hnh P1.14 ?
Gi s tn hiu vo l 10sin t V. V mch v ghi tn cho mch.
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1.31 Thit k mt mch ghim cho dng sng ra nh hnh P1.17. Gi s t cho sn l 0,1
F
v tn hiu vo vi = 5sin25000t V. Cho V = 0,7V.
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d. gm.
15. Kiu mch phn cc no ca JFET gi dng mng khng i tt nht khi c thay i v cc
thng s ca JFET ?
a. Phn cc kiu phn p;
b. Phn cc kiu hi tip in p;
c. Phn cc ngun;
d. T phn cc.
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d. 2V.
d. 0,2mS.
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27. Chuyn mch bng JFET kiu ni tip khng hon ho, nhng vi iu kin in tr ti phi
ln hn nhiu so vi in tr . . . . . . . . . . th chuyn mch s cho chc nng ng.
a. Rg;
b. RDS(on);
c. Rd;
d. RDS(off).
28. Trong mch chuyn mch JFET kiu song song, JFET c mc . . . . . . . .
a. Ni tip vi ti v song song vi Rs;
b. Ni tip vi Rs v song song vi ti;
c. Ni tip vi ti v ni tip vi Rs;
d. Song song vi ti v song song vi Rs.
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34. Nu ngun tn hiu c tr khng ni l 5k v khi ni ngun tn hiu vo mch hnh 6.38,
s
lm cho my pht qu ti, c sai hng no trong mch khng ?
a. JFET b h mch gia cc mng v cc ngun;
b. JFET b ngn mch cng v ngun;
c. in tr Rg2 h mch;
d. mch c chc nng ph hp.
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F. Bi tp phn JFET.
[ Lu : Tt c cc bi tp di y u s dng JFET c cng cc thng s nh c tuyn
truyn t hnh 6.40. i vi cc bi tp nu c BJT trong mch th s dng thng s F(min) =
100 v c th thc hin sau khi bit v BJT ].
1. Tnh h dn ca JFET c c tuyn hnh 6.40 ti in p phn cc VGS = - 2V (s dng
thay i v in p VGS l 0,5V cho php tnh).
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VDS = . . . . . . . .
-40-
6. Hnh 6.43, l mch khuych i JFET phn cc kiu phn p. Tnh cc gi tr tnh: VG; VS;
VD; v VDS.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
VDS = . . . . . . . .
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8. Tnh ID; VG; VS; VD; v VDS cho mch hnh 6.44.
ID = . . . . . .
VG = . . . . . . .
VS = . . . . . . .
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VD = . . . . . . . .
VDS = . . . . . . . .
-43-
VDS = . . . . . . . .
-44-
VDS = . . . . . . .
.Vout= . . . . . . .
.
13. Hnh 6.47, l mt mch khuych i JFET t phn cc. Tnh cc gi tr sau:
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
VDS = . . . . . . . .
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .
14. Hnh 6.48, l mt mch khuych i JFET mng chung. Tnh cc gi tr sau:
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . .
zin = . . . . . . .
zout = . . . . . . .
. Av = . . . . . . .
Vout= . . . . . . . .
Ai = . . . . . . . .
A. p = . . . . . . .
.
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G. Cu hi v MOSFET.
7.1. Gii thiu v cc MOSFET.
1. T MOS trong cu trc MOSFET l vit tt ca (cc k t gch chn) . . .
a. Material Of Semiconductor [vt liu bn dn] ;
b. Metal - Oxide - Semiconductor [kim loi - oxide - bn dn]; c. Most standard Semiconductor [cht
bn dn tinh khit nht] ; d. Khng phi cc trng hp trn.
2. cch ly cng knh JFET ph thuc vo tip gip PN phn cc ngc, nhng MOSFET s
dng cc lp mng bng . . . . . . . nh mt lp cch in gia cng v knh dn.
a. dioxide silicon;
b. thu tinh;
c. Cao su;
d. thu tinh cao cp.
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7.3. En - MOSFET.
8. K hiu mch ca En - MOSFET knh N l . . . . . . .
12. Khi mch chuyn mch En - MOSFET chuyn sang dn, th in tr gia mng v ngun s
thp hn so vi . . . . .
a. 1 ;
b. RDS(on);
c. Rg / gm;
d. Rd / gm.
14. Kiu mch phn cc thng c s dng trong cc mch khuych i En - MOSFET l . . .
a. Phn cc hi tip mng; b. Phn cc ngun; c. T phn cc; d. Phn cc ngun dng hng.
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d. VGS(on).
22. Mch chuyn i tn hiu DC hay tn hiu tn s thp thnh tn hiu tn s cao l . . . .
a. ghp knh [multiplexing];
b. hn ch [clipper];
c. ngt qung [chopper];
d. gii ghp [demultiplexing].
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H. Bi tp phn MOSFET:
1. Hnh 7.35, l c tuyn truyn t ca mt De - MOSFET. T c tuyn hy xc nh gi tr
ca VGS(off) v IDSS.
VGS(off) = . . . . . . .
IDSS = . . . . . . . .
2. Tnh VG, VS, VD, v VDS mch hnh 7.36, nu IDSS = 10mA.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
-51-
VDS = . . . . . . . .
-52-
5. Tnh VG, VS, VD, v VDS mch hnh 7.37, nu IDSS = 2,5mA.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
VDS = . . . . . . . .
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8. Tnh VG, VS, VD, v VDS mch hnh 7.39, cho ID(on) = 2mA.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . .
VDS = . . . . . . .
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10. Hy tnh mc tn hiu ra ca mch chuyn mch hnh 7.40, khi MOSFET ngng dn (off),
v khi MOSFET dn (on).
Chuyn mch m (on) = . . . . . . . . .
Chuyn mch ng (off) = . . . . . . . . . . .
11. Hy tnh mc tn hiu ra ca mch chuyn mch hnh 7.41, khi MOSFET ngng dn (off),
v khi MOSFET dn (on).
MOSFET ngng dn (off) = . . . . . . . . .
MOSFET dn (on) = . . . . . . . . . . .
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12. Hy thit k v v mt mch chuyn mch trong chuyn mch m (dn - on) v ng
(ngng dn - off) in p ngun cung cp 15V n ti 100. Ngun iu khin s nhn mch
chuyn mch nh mt tr khng 100k. c tuyn truyn t ca En - MOSFET c s dng
trong mch cho hnh 7.42.
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D4.2 Thit k li mch khuych i CS bng JFET bi tp D4.1, cho transistor c VGSoff = - 4V
v IDSS = 6mA.
(s: R1 = 500k; R2 = ; RD = 1,61k; RSdc = 390; RSac = 223; v Ai = - 100).
D4.3 Thit k mch khuych i CD bng JFET (hnh 4.19) cho h s khuych i dng in
bng 15 cho ti l RL = 20k s dng VDD = 12V v Rin = 400k. S dng JFET knh-n c
VGSoff = - 3V, v IDSS = 6mA. Gi s VDSQ = VDD/2 v IDQ = 0,4IDSS. Tnh tr s ca cc in tr
v h s khuych i in p ca mch khuych i.
(s: RSdc = 2,5k; RSac =1,25k; R1 = 676k; R2 =980k; Av = 0,75).
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4.2 Trong mch hnh 4.16a, khi c R1 = 21k, R2 = 450k, RS = 500, RD = 1,5k, RL =
4k, v VDD = 12V, khi VDSQ = 4V, hy xc nh cc thng s sau y:
a) IDQ; b) VGSQ; c) Rin; d) Av khi gm = 3,16mS; e) Ai.
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4.3 Trong mch hnh 4.16a, RD = 2k, RL = 5k, Rin = 100k, RS = 300, v VDD = 15V. Xc
nh cc tr s ca R1 v R2 cn thit transistor lm vic mc 4mA khi VGSoff = - 4V v IDSS
= 8mA. Tnh h s khuych i in p v dng in ca mch khuych i.
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4.4 a) Thit k mch khuych i chung cc ngun [Common-Source tc CS] (hnh P4.1) s dng
JFET knh-p p ng cc thng s yu cu l Av = - 10 v Rin = 20k. Gi thit l im-Q c
chn ti IDQ = - 1mA, VDSQ = -10V, VGSQ = 0,5V.
b) Tnh Ai, R1, R2, RS, v RD. (Da vo c tuyn hnh P4.2. Lu rng c th c chia tch RS
v mch r cho RS).
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4.6 Thit k mch khuych i CS s dng MOSFET nh mch hnh P4.3. Cho RL = 1k, Av
= - 1, Rin = 15k. im-Q c chn ti VGSQ = 3V, IDQ = 7mA, VDSQ = 10V, trong gm =
2300S. Xc nh tr s cho tt c cc cu kin cn li.
4.7 Thit k mch khuych i CS s dng JFET knh-n cho kiu mch nh hnh P4.4, vi Av
= - 1, VDD = 12V, RL = 1k, Rin = 15k, IDSS = 10mA, v VGSoff = - 4V. S dng IDQ = IDSS / 2.
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4.8 Thit k mch khuych i CS s dng JFET knh-n khi c RL = 4k, Av = - 3, v Rin =
50k. Gi s l transistor s dng c VGSoff = - 4,2V v IDSS = 6mA. S dng mch hnh P4.4
vi VDD = 20V. Xc nh Ai.
4.9 Thit k mch khuych i CS bng JFET knh-n c AV = -2, Ai = -20, VDD = 12V, v RL =
5k. Xc nh tr s ca tt c cc cu kin v mc cng sut nh mc ca transistor. (mch c
th cn phi thay i p ng thit k). Transistor c chn c VGSoff = - 5V v IDSS = 8mA.
S dng IDQ = 0,4IDSS v VDSQ = VDD/2. Xem mch hnh P4.4.
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4.11 Thit k mch khuych i CS bng JFET knh-p vi ti l 5k, s dng mch hnh
P4.4. Cho VDD = - 20V, AV = - 2, Ai = - 20, VGSoff = 6V v IDSS = - 5mA. Xc nh cng sut nh
mc ca transistor.
4.12 Thit k mch khuych i chung cc ngun (CS) bng MOSFET knh-n, s dng
transistor 3N128 (ph lc D) cho ti l 10k vi h s khuych i in p Av = - 10. S dng
mch hnh P4.3. Chn im-Q khi Rin > 10k, bng cch s dng h c tuyn th hin theo cc
thng s k thut trang cui ca phn bi tp ny.
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4.13
Thit k mch khuych i bng MOSFET knh-n, chung cc ngun (CS) s dng
transistor 3N128 (ph lc D) cho ti l 2k vi Av = - 4 v Rin > 100k. Gi s rng, im-Q
c chn l VGSQ = - 0,6V, VDSQ = 10V, IDQ = 10mA, VDD = 20V. Xem mch hnh P4.3.
4.14
Phn tch mch khuych i CS bng JFET knh-n nh mch hnh P4.5, khi c ti l
20k, RD = 8k, VDD = 24V, v Rin = 50k. Chn im-Q c VGSQ = - 1,5V, VDSQ = 12V, IDQ =
1mA, v gm = 2,83mS. Hy tnh Ai, Av v tr s ca tt c cu kin.
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4.17 Cho mch nh hnh P4.6, gi s rng RS c r mch bng mt t in. VDD = 15V, RD
= 2k, RL = 3k, RS = 200, R1 = 500k, IDSS = 8mA, v VGSoff = - 4V. Hy xc nh Av, Ai,
Rin, v im-Q cho mch khuych i.
4.18 Cho mch hnh P4.6, gi s rng VDD = 20V; RD = 2k; RL = 10k; RS = 200; R1 = 1M;
IDSS = 10mA, v VGSoff = - 5V. Hy xc nh im-Q, Av, Ai, Rin, v cho mch khuych i.
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4.19 Cho mch hnh P4.6, gi s rng VDD = 20V, RD = 2k, RL = 6k, RS = 100, R1 = 1M,
IDSS = 10mA, v VGSoff = - 5V. Hy xc nh im-Q, Av, Ai, Rin, v cho mch khuych i.
4.20 Cho mch khuych i CS nh hnh P4.1, s dng JFET c IDSS = 2mA, v gm0 =
2000S. Nu tr s ca RD = 10k, RS = 200, th h s khuych i in p Av l bao nhiu i
vi cc gi tr ca VGSQ sau y ?
a) VGSQ = 1V; b) VGSQ = 0,5V; c) VGSQ = 0V.
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4.21 Mch khuych i CS hnh P4.6, vi transistor c VGSoff = - 4V, IDSS = 4mA, v rDS =
500. Nu RD = 2k, RL = 4k, v RS = 200, th h s khuych i in p Av ca mch l
bao nhiu vi VGSQ = - 1V ? Av s nh th no khi rDS t n v cng ?
4.22 Thit k mch khuych i CS bng MOSFET knh-n nh mch hnh P4.3, khi c RL =
4k, Av = - 5, v Ai = - 10. Gi s rng, im-Q chn c VDSQ = 10V, VGSQ = 4V, IDQ = 2mA,
v gm = 4000S.
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4.23 Cho mch nh hnh P4.7, c Ri = 50k, R1 = 100k, R2 = 800k, RD = 4k, RL = 6k,
RS = 200, v VDD = 20V, xc nh cc thng s sau khi s dng FET c VDSQ = 6V, gm =
2,5mS:
a) IDQ, VGG, v VGSQ
b) Av, Rin, v Ai.
4.24
Cho mch nh hnh P4.7, nu loi b R2, transistor FET lm vic mc dng l 2mA.
Tr s ca cc cu kin l Ri = 100k, R1 = 400k, RD = 3k, RL = 5k, v VDD = 12V. Xc
nh cc thng s sau khi s dng transistor c IDSS = 8mA, v VGSoff = - 4V:
(a) RS; (b) Av, Rin, v Ai.
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4.25 Thit k mch khuych i lp li-cc ngun (SF) bng JFET knh-p nh hnh P4.8, vi
Rin = 20k, nhn c h s khuych i in p Av gn bng 1. Tnh Ai, R1, R2, v RS. S
dng h c tuyn cho hnh P4.2.
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4.27 Thit k mch khuych i bng MOSFET kiu mng-chung (CD) khi c RL = 100, Ai =
200, v Rin = 100k. S dng transistor c VGSoff = - 6V v IDSS = 20mA. Xc nh Av v gi tr
ca tt c cc in tr. Mch s dng hnh P4.9.
4.28 Thit k mch khuych i CD bng MOSFET knh-n, trong Rin = 120k, Ai = 100, RL
= 500, VDD = 20V, v chn transistor c VGSoff = - 5V v IDSS = 15mA. S dng mch hnh
P4.9, vi IDQ = 0,6IDSS v VDSQ = VDD/2.
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4.29
Thit k mch khuych i lp li cc ngun (SF) s dng JFET knh-n cho h s
khuych i dng l 100 v in tr vo l 500k. Ti l 2k. Chn im-Q theo cc tham s
l: VDSQ = 8V, IDQ = 5mA, VGSQ = - 1V, v gm = 4mS. Xc nh cc in tr, h s khuych i
in p v v mch khi VDD = 10V.
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4.31 Thit k mch nh hnh 4.21, khi c VDD = 16V v RL = 8k. S dng transistor c
VGSoff = - 3,33V, IDSS = 10mA. Xc nh ton b tr s ca cu kin, Ai, v Av khi c Rin = 12k.
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