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CU HI & BI TP (1)

CU KIN IN T
( PHN TR LI & BI GII CA SINH VIN )

H & tn sinh vin: . . . . . . . . . . . . . . . . . . .


Nhm hp: . . . . . . .Lp: . . . . . . . .

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Lu :
Mi sinh vin hy t tr li cu hi v lm bi tp trc tip vo ti liu ny
(bn cng trn kh giy A4). Khng sao chp bi gii ca ngi khc.
i vi phn cu hi trc nghim, SV lm bi cn suy ngh tht k trc khi
chn bng cch khoanh trn hoc nh du vo ngay trc mt phng
n ng nht, v gii thch ngn gn vo phn trng bn cnh hoc pha di
mi cu hi. i vi cc bi tp, hy ghi li gii vo ngay phn trng tng
ng mi bi tp.
Ti liu tham kho:
- Bi ging Cu kin in t. (2001) [D Quang Bnh].
- Fundamentals of Linear Electronics Integrated and Dicrete. (1998).
[James Cox ].
- a ch lin h khi cn: Thy D Quang Bnh, 0905894666, hoc: Email:
binhduquang@.gmail.com
Thi hn hon thnh v np bi tp: . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ti bm: in t, Khoa in t-Vin thng, Trng i hc Bch Khoa
Nng 54 Nguyn Lng Bng, Qun Lin Chiu, Tp Nng. (khng chp
nhn s chm tr).

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A. Cu hi v diode.
1.1. Gii thiu v diode.
1. K hiu mch ca diode l . . . .

2. Khi c phn cc thun, v c bn diode l mt . . . .


a. in tr c gi tr ln;
b. chuyn mch h mch;
c. chuyn mch kn mch;
d. t c in dung thp.

1.2. Cu to ca diode.
3. S lng in t ho tr trong cc vt liu dn in tt thng c . . . .
a. 1;
b. 4;
c. 8;

d. 16.

4. Lin kt ng ho tr l . . .
a. lin kt c s dng kt ni hai in cc n tip gip PN;
b. s phn chia cc in t trong cu trc tinh th;
c. hot ng xy ra khi vt liu thun v vt liu ngoi lai kt hp vi nhau;
d. khng phi cc trng hp trn.
5. Ht ti in a s trong vt liu bn dn tp - P l . . . .
a. cc neutron (ht trung ho);
b. cc in t;
c. cc l trng;
d. cc ion.
6. Khi tip gip PN c phn cc ngc, th s c . . . . . . . . c to thnh chn dng in.
a. in p chn;
b. vng ngho;
c. vng tp cht;
d. dng
ngc.
7. Khi tip gip PN c phn cc thun, cc in t s kt hp vi . . . . . ti tip gip c
dng in.
a. cc in t;
b. cc ion;
c. cc ht trung ha [neutron];
d. cc l trng.
8. in p ro chn [barrier voltage] ca diode tip gip PN bng Silicon vo khong . . . .
a. 0,1V;
b. 0,3V;
c. 0,7V;
d. 1,5V.

1.3. Ba m hnh diode.


9. M hnh no sau y khng phi l mt trong ba m hnh ca diode ?
a. m hnh ca diode zener;
b. m hnh chi tit;
c. m hnh l tng;
d. m hnh thc t.

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10. Mt mch bng diode c in p lm vic l 3V, nn st p tip gip l ng k. mch s


c phn tch bng m hnh . . . . .
a. zener;
b. chi tit;
c. l tng;
d. thc t.

1.4. Cc mch diode.


11. Mch no sau y (s dng cc diode) khng phi l mch chnh lu ?
a. cu;
b. bn k;
c. ghim;
d. bin p im gia.
12. Mch chnh lu . . . . . . s dng 4 diode.
a. cu;
b. bn k;

c. ghim;

13. Mch chnh lu . . . . . c hai diode c phn cc thun ng thi .


a. cu;
b. bn k;
c. ghim;

d. bin p im gia.

d. bin p im gia.

14. i vi cc mch chnh lu khi tng dng ti s lm cho in p gn . . . .


a. gim;
b. vn khng i;
c. tng;
d. gim xung 0.
15. Mch nhn p c cu to bng cc diode v . . . .
a. cc t in;
b. cc in cm;
c. ch c cc diode v cc in tr;
d. cc mch hn ch.
16. Mch xn (hn ch) s lm thay i . . . . . . . . . . ca tn hiu ra.
a. mc 0 ca in p DC [DC offset];
b. dng;
c. tn s;
d. rng bng tn.
17. Mch ghim s lm thay i . . . . . . . . . . . . . . . . . ca tn hiu ra.
a. mc 0 ca in p DC [DC offset];
b. dng;
c. tn s;
d. rng bng tn.

1.5. Cc thng s ca diode.


18. Hai thng s lm vic nh mc ca diode quan trng nht l . . . . .
a. in p ngc lp li nh v dng thun trung bnh.
b. Dng thun gn nh v st p thun.
c. Dng ngc v thi gian hi phc ngc.
d. Dng thun trung bnh v dng ngc.
1.6. Sai hng cc mch diode.
19. Khi tho mt diode ra khi mch v kim tra diode bng mt vn nng s [DMM], u
c
cc s ch th qu thang o khi c phn cc thun v qu thang o khi c phn cc
ngc.
H hng no c diode ?
a. diode h mch;
b. diode b ngn mch;
c. diode l bnh thng.

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20. Khi tho mt diode ra khi mch v kim tra diode bng mt vn nng s [DMM]. ng h
ch th 0,636V khi c phn cc thun v qu thang o khi c phn cc ngc. C h
hng no vi diode ?
a. Diode b h mch;
b. Diode b ngn mch;
c. Diode hot ng bnh thng.

21. Khi tho mt diode ra khi mch v kim tra diode bng mt vn nng s [DMM]. S ch th
trn ng h l 0,636V khi c phn cc thun v 0,752V khi c phn cc ngc. C h
hng no vi diode ?
a. Diode b h mch;
b. Diode b ngn mch;
c. Diode hot ng bnh thng.
22. Mch hnh 1.70, c tn hiu vo l sng sin. Diode D1 h mch. Dng sng ti u ra l
dng sng no di y ?

23. Mch hnh 1.70, c tn hiu vo l sng sin. Diode D1 ngn mch. Dng sng ra l dng
sng no di y ?

24. Mch hnh 1.71, c tn hiu vo l sng sin. Diode D1 h mch. Dng sng ra l . . . . .

25. Mch hnh 1.71, c tn hiu vo l sng sin. Diode D2 h mch. Dng sng ra l . . . . .

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26. Mch hnh 1.72, c tn hiu t vo u vo l sng sin, 50Vnh. Dng sng ra l . . . . .

27. Mch hnh 1.72, c tn hiu vo l sng sin, 35Vhiu dng. Dng sng ra l . . . . . . . .

28. Mch hnh 1.73, c tn hiu vo l sng vung, 20Vnh - nh (+ 10V n - 10V). T in C1
b ngn mch. Dng sng ra l . . . . .

B. Bi tp chng diode.
1. Nu t ngun dc l 18V vo mch, th mc in p ch th trn ng h o trong mch hnh
1.74a l bao nhiu? . . . . . . . . . .
v mch hnh 1.74b l bao nhiu? . . . . . . . . .

2. Nu diode D1 mch hnh 1.75, c dng thun nh mc ln nht l 300mA, th tr s in


tr R1 nh nht c th s dng c trong mch l bao nhiu?
R1 (nh nht) = . . . . . . .

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3. Mc cng sut tiu tn diode D1 trong mch hnh 1.76a l bao nhiu ?
PD = . . . . .
v mch hnh 1.76b l bao nhiu ? PD = . . . . . . .

4. Nu D1 mch hnh 1.77, c thng s in p ngc nh [PIV] l 400V, th mc in p ln


nht c th t vo mch hnh 1,77a, l bao nhiu ? VA (ln nht) = . . . . . . . .
Hnh 1.77b, l bao nhiu? VA (ln nht) = . . . . . . . .

5. Hy v dng v ghi mc in p ca dng sng ra ti im o TP1 trong mch hnh 1.78.

6. Hy v dng v ghi mc in p ca dng sng ra ti im o TP1 trong mch hnh 1.79.

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7. Hy v dng v ghi mc in p ca dng sng ra cho mch hnh 1.80.

8. Mch hnh 1.81a, c in p vo l 2VDC (in p ti hai im AB). Hy tnh mc tn hiu


ti im o 1 (TP1).

9. Mch hnh 1.81b, c in p vo l 2VDC (in p ti hai im AB). Hy tnh mc tn hiu


ti im o 1 (TP1).

10. Cho mc in p vo l 100Vnh-nh, hy tnh v v dng tn hiu ti im o 1 (TP1) ca


mch hnh 1.81a.

11. Cho mc in p vo l 100Vnh-nh, hy tnh v v dng tn hiu ti im o 1 (TP1) ca


mch hnh 1.81b.

12. Cho mc in p vo l 100Vnh-nh, hy tnh v v dng sng tn hiu ti im o 1


(TP1)
ca mch hnh 1.81c. (tn s tn hiu vo l 60Hz vi ti bng 1k).

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13. Hy tnh cng sut tiu tn bi mch chnh lu cu khi mch chnh lu cung cp mc dng
l 5A.

14. Hy tnh cng sut tiu tn bi mch chnh lu ton k dng bin p im gia khi mch
chnh lu cung cp mc dng l 5A.

15. Hy tnh phn trm sai s ca mc in p ra do b qua st p thun ca cc diode trong


mch chnh lu cu ton k khi (a) mc in p vo l 200Vnh-nh, v (b) mc in p vo l
10Vnh-nh.

16. Hy v v ghi mc in p ca dng sng ra i vi mch hnh 1.82. Tn hiu vo l


sng
sin, 50Vnh, tn s l 2kHz.

17. Hy v v ghi mc in p ca dng sng ra i vi mch hnh 1.83. Tn hiu vo l


sng
sin, 50Vnh, tn s l 2kHz.

18. V v ghi mc in p ca dng sng ra i vi mch hnh 1.84.

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19. V v ghi mc in p ca dng sng ra i vi mch hnh 1.85.

20. Cho mc in p vo sng sin l 22Vnh-nh, v dng sng tn hiu ti im o 1 ( TP1 ) ca


mch hnh 1.86a. (R1 = 1k )

21. Cho mc in p vo sng sin l 8Vnh-nh, v dng sng tn hiu ti im o 1 (TP1) ca


mch hnh 1.86b. (R1 = 1k , V1 = - 3V).

22. Cho mc in p vo sng vung l 8Vnh-nh, v dng sng tn hiu ti im o 1 (TP1) ca


mch hnh 1.86c. (R1 = 1k).

23. Cho mc in p vo sng vung l 28Vnh-nh, v dng sng tn hiu ti im o 1


(TP1)
ca mch hnh 1.86d. (R1 = 1k, V1 = -3V).

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C. Cu hi v cc diode c bit.
2.1. Diode Zener:
1. Diode Zener thng lm vic ch :
a. Phn cc thun;
c. Khng phn cc;

b. Phn cc ngc;
d. Phn cc bng in tr.

2. Diode Zener so vi diode thng thng ch phn cc thun s nh th no ?


a. St p trn tip gip l nh hn nhiu;
b. St p trn tip gip l ln hn nhiu;
c. St p trn tip gip l gn nh nhau;
d. St p trn tip gip lun lun xp x 2V.
3. Khi diode Zener lm vic vng nh thng zener, vi mt s thay i ln v dng zener s
to ra . . . . .
a. mt s thay i ln v in p zener;
b.mt s thay i nh v in p zener;
c. khng thay i v in p zener;
d. mt s thay i ln v dng thun.

2.2. ng dng ca diode Zener.


4. Mch n nh in p bng diode zener thch hp c kh nng duy tr mc in p gn
nh
khng i. . .
a. khi c s thay i dng ti;
b. khi c s thay i in tr ti;
c. khi c s thay i in p trn ti;
d. Tt c cc trng hp trn.

5. in p vo ca mch n nh in p bng diode Zener cn phi . . . .


a. bng in p zener;
b. nh hn in p zener;
c. ln hn in p zener;
d. bng 0.
6. Mch n nh in p bng diode zener s dng mt in tr hn dng . . . .
a. mc ni tip vi in tr ti;
b. mc song song vi in tr ti;
c. mc ni tip vi t hp mch song song gm ti v diode zener;
d. mc ni tip vi
diode
zener.

2.3. B bo v qu in p.
7. Cc xung in p c th pht sinh trn ngun in li l do . . .
a. cc thay i v nh sng;
b. cc ngun m thanh;
c. chp, st;
d. tt c cc trng hp trn.
8. B trit in p qu - TVS c cu trc c bn nh . . .
a. diode silicon;
b. in tr than;
c. t in phn;

9. K t "V" trong k hiu MOV l . . .


a. Voltage [in p];
c. Varactor [diode bin dung];

d. diode zener.

b. Varistor [bin tr];


d. Variable [bin thin].
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2.4. Diode bin dung.


10. Mt cu kin bn dn s dng gi tr in dung ca tip gip PN bin thin theo in p l
dng c c . . . .
a. mt cc;
b. 2 cc;
c. 3 cc;
d. 4 cc.
11. in dung ni ca diode bin dung s gim khi . . . .
a. dng thun tng;
b. in p thun tng;
c. in p phn cc ngc gim;
d. in p phn cc ngc tng.

2.5. Cc diode chuyn mch tn s cao.


12. Yu t chnh hn ch tc chuyn mch ca diode l . . .
a. in tr tip gip;
b. in cm ca tip gip;
c. in dung ca tip gip;
d. nhit ca tip gip.
13. Cu kin bn dn no sau y khng c xem l diode chuyn mch tn s cao.
a. diode PIN;
b. diode hi phc bc;
c. diode Schottky;
d. diode bin dung [varactor].

14. Diode PIN c cu to gm mt phn bn dn tp N, mt phn bn dn tp P, v . . . .


a. mt lp o;
b. mt phn bn dn P nguyn cht [IP] pha tp m c;
c. mt phn bn dn N nguyn cht [IN] pha tp m c;
d. mt lp bn dn thun.
15. Diode no sau y cng c coi l diode ht ti nng ?
a. diode PIN;
b. diode hi phc bc;
c. diode Schottky;
d. diode bin dung [varactor].

2.6. Diode pht sng [LED].


16. Mc st p xp x trn cc LED khi c phn cc thun l . . . . .
a. 0V;
b. 0,3V;
c. 0,7V;
d. 2V.
17. Cc LED pht x nh sng ch khi chng c . . . . .
a. phn cc ngc;
b. phn cc thun;
c. lm nng;

d. lm lnh.

18. Cc b hin th LED by on c cc dng v . . . . .


a. anode chung;
b. cathode chung;
c. emitter chung

d. c a v b.

2.7. Quang diode [Photodiode].


19. Mt photodiode thng lm vic khi c . . . . .
a. phn cc thun;
b. phn cc ngc;
c. phn cc khng;

d. phn cc bng in tr.

20. Khi nh sng chiu ti tip gip tng ln, th n tr ca photodiode s . . . . . .


a. gim xung;
b. tng ln;
c. khng nh hng; d. chuyn sang h mch.
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21. K hiu mch ca diode bin dung [varactor] l . . . . . . .

22. K hiu mch ca photodiode l . . . . . . .

23. St p trn diode zener phn cc thun xp x bng . . . . . .


a. 0,7V;
b. VZ ;
c. VZ + 0,7V;

d. 2V.

24. St p trn diode zener phn cc ngc xp x bng . . . . . . .


a. 0,7V;
b. VZ;
c. VZ + 0,7V;

d. 2V.

Hy chn nguyn nhn c th d xy ra nht ca mi tnh hung c lit k di y i


vi mch hnh 2.31.
25. in p ra ca mch hnh 2.31, l 9,6V, nguyn nhn c th l do . . . .
a. RS h mch;
b. RS b ngn mch;
c. RL h mch;
d. RL b ngn mch;
e. Zener h mch;
f. Zener b ngn mch;
g. mch bnh thng.

26. in p ra ca mch hnh 2.31, l 0V v tt c cc linh kin lm vic nhit phng,


nguyn nhn c th l do . . . . . . .
a. RS h mch;
b. RS b ngn mch;
c. RL h mch;
d. RL b ngn
e. Zener h mch;
f. Zener b ngn
g. mch bnh
mch;
mch;
thng.
27. in p ra ca mch hnh 2.31, l 6,8V, nguyn nhn c th l do . . . . .
a. RS h mch;
b. RS b ngn mch;
c. RL h mch;
d. RL b ngn
e. Zener h mch;
f. Zener b ngn
g. mch bnh
mch;
mch;
thng.

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D. Bi tp v cc diode c bit.
1. V v ghi mc in p dng sng ra (TP1 ) cho mch hnh 2.32.

2. Mc cng sut tiu tn trn diode zener hnh 2.32, l bao nhiu ?

3. Nu gim RL trong mch hnh 2.32, dng ti s tng ln. Hy xc nh dng ti ln nht c th
c cung cp khi mch khng cn n nh in p.

4. Cho in p vo l 28VDC, hy tnh in p ti TP1 ca mch hnh 2.33 (R1 = 1k, RL


=
1k , VZ = 9,6V).

5. Cho in p vo l 15VDC, hy tnh in p ti TP1 ca mch hnh 2.33 (R1 = 1k, RL


=
1k , VZ = 9,6V).

6. Trong mch hnh 2.33, nu in p vo Vvo = 28V, R1 = 1k , VZ = 12V, v RL = 1k ,


(a)Tnh dng zener, (b) Tnh dng ti, v (c) Tnh in p ra Vra.

7. Cho mch hnh 2.33, nu in p vo Vvo = 25V, R1 = 1k, v VZ = 9V, tnh cng sut tiu
tn ca zener khi (a) RL = 1k , v (b) RL = 10k .

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8. Hy thit k v v mt mch n nh in p bng zener tng t nh mch hnh 2.33 vi


in p ra l 9,1V. Di in p vo trong khong t 12,3V n 14,6V, v khong dng ti u
ra t 0 n 100mA.

9. Mc cng sut tiu tn ca mt diode zener 9,1V l bao nhiu khi mc dng chy qua zener
theo chiu phn cc thun l 100mA ?.

10. Mc cng sut tiu tn ca mt diode Zener 9,1V l bao nhiu khi mc dng chy qua zener
theo chiu phn cc ngc ?.

11. Mt b trit in p qu [TVS - Transient Voltage Suppressor] hai chiu lm vic vi


mc in p nh thng l + / - 28V. Cp ni RS232 lm vic trong phm vi hai mc in p
gii hn (chuyn mch t - 15V n + 15V). Mc dng chy qua TVS l bao nhiu ?.(hnh 2.34)

12. Diode bin dung hnh 2.35, c in dung l 200pF khi in p phn cc ngc l 4V. Ti
tn s no ca V1 mch hnh 2.35 c mc in p tn hiu ra ln nht ?.

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13. Nu ngun cung cp mt chiu 4VDC mch hnh 2.35 c iu chnh ln 8VDC, th ti
tn s no ca V1 mch c mc tn hiu ra ln nht ? (xem c tuyn hnh 2.12).

14. Tnh in p ti TP1 v TP2 i vi mch hnh 2.36.

15. Mt LED c s dng ch th khi mch c cp ngun l 20V. Hy tnh in tr ni


tip cn phi c gii hn dng thun ca LED mc 15mA.

16. Ch s no s c hin th trn b hin th by on mch hnh 2.37.


(xem s chn ca LED 7 on c s hiu: MAN72A trch dn trang 32).

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17. Tnh mc dng chy qua cc on LED dn in trong mch hnh 2.37.

18. Tnh tng cng sut tiu tn ca mch hnh 2.37.

19. V mch, cc tr s linh kin ca mch ca mt LED c ni vi ngun 12V LED pht
sng. Dng chy qua LED c gii hn mc 25mA.

20. Hy v s cc kt ni n b hin th bng LED 7-on chung-anode (MAN72A) theo


cc u vo, cc in tr cn thit, v ngun cung cp hin th ch s 5.

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BI TP B SUNG PHN DIODE


D1.1 Mt diode silicon dn nhit 25oC, vi mc st p trn hai cc diode l 0,7V. a) Xc
nh mc st p V trn diode nu diode lm vic nhit +100oC v 100oC.
(s: a) V = 0,55V; b) V =
0,95V).

D1.2 Mch hnh 1.31S, dng chnh lu sng sin c 100Vrms v tn s 60Hz. Mc in p ra
nh nht khng th gim di 70V v t s bin p l 1:2. in tr ti l 2k. Tnh in dung
cn thit ca t lc mc song song vi RL. (s: 8,25F).

D1.3 in p ra ca b chnh lu bn k vo khong 50V, tn s 60Hz. Gi s tr thun ca


diode bng 0, ti thp nht c th mc vo mch khi s dng t khong 50F duy tr mc
in p gn nh nht trn 40V l bao nhiu ? (s: 1,67k).

D1.4 Mch chnh lu ton k nh mch hnh 1.31S, c bin p vi t s vng dy l 5:1.
a) Tnh tr s in dung ca t cn duy tr mc in p nh nht khong 10V trn ti 100.
(s:233F)
b) Nu in p tn hiu vo phn a) thay i trong khong t 110V n 120V rms, tn s
60Hz, th tr s in dung cn thit l bao nhiu ?
(s: 233F).

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D1.5 Mt mch n nh bng diode Zener (hnh 1.37S) c in p u vo thay i trong khong
t 10V n 15V v mc dng ti thay i trong khong t 100mA n 500mA.
a) Tnh tr s ca Ri v IZmax, bit rng mch s dng diode zener 6V.
(s: 6,33; 1,32A).
b) Hy tnh cng sut nh mc cho diode zener v in tr vo (Ri).
(s: 7,92W; 12,8W).
c) Hy tnh tr s ca t cn thit nu mc ngun l u ra ca mch nn bn k vi tn hiu
vo
l 60Hz.
(s: 4731F).

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D1.6 a) Nu khng s dng in tr x RF trong mch hnh 1.37S, v bin p l bin p im


gia 4:1 vi tn hiu vo l 120Vrms, 60Hz. Tnh tr s ca Ri cn thit duy tr 10V trn ti c
mc dng thay i t 50mA n 200mA. Bit in p thp nht cho php ti u vo ca mch
n nh l 14V.
(s:14,8)
b) Tnh tr s in dung cn thit trong mch n nh (cho phn a) duy tr mc in p thp
nht l 14V.
(s: 875F).

D1.7 Da theo mch ca bi tp D1.6, cho bit in p vo thay i t 110Vrms n 120Vrms,


60Hz. Hy tnh chn tr s in dung ca t thch hp cho c bin thin dng ti t 50mA n
200mA v thay i in p vo cho trn.
(s: C = 1160F).

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1.1 Xc nh dng sng ra ca mch hnh P1.1, khi tn hiu vo vS l dng sng vung i
xng bin nh nh l 100V, c chu k l 2s. Gi thit rng diode l l tng.

1.2 Xc nh dng sng ra ca mch hnh P1.2, (diode l tng) khi vS l:


a) Sng vung i xng 100V nh nh, c chu k l 2s.
b) Sng sin 100V nh nh, vi chu k l 2s.
c) Sng tam gic i xng 40V nh nh, vi chu k l 2s.

1.3 Xc nh dng sng ra ca mch hnh P1.3, khi vS l sng sin 100V nh nh, c chu k
l 2s. Gi s diode l l tng, v C = 0.

-19-

1.4 V c tuyn ID theo VD cho mt diode silicon nu dng bo ha ngc IS = 0,1A, s dng
n = 1,5 i vi silicon. Xc nh mc in p chuyn sang dn ca diode.

1.5 V c tuyn ID theo VD cho mt diode germanium nu dng bo ha ngc IS = 0,01mA.


Xc nh mc in p chuyn sang dn cho diode (c tuyn c th v trn cng trc th nh
c tuyn ca bi tp 1.4).

1.6 Mt diode thc t c dng bo ha ngc l 0,2 A, n = 1,6, v VT = 26mV. Hy xc nh


dng chy qua diode khi st p trn diode l 0,4V. Tnh in tr thun ca diode ti im lm
vic ny.

1.7 Cho mch hnh 1.4, hy xc nh mc dng chy qua diode khi st p dc trn diode l
0,6V i vi di dng ny v nVT = 40mV.

1.8 Cho mch hnh P1.5, tnh mc dng I3


a) Khi cc diode c xem l l tng.
b) Khi cc diode c xem l diode thc t, c Rf = 10 , v V = 0,7V. B qua dng bo
ha ngc.

-20-

1.9 Nu ti u ra ca mt mch nn bn k l 10k , th tr s ca t cn phi c l bao nhiu


c mc in p ra khng thay i qu 5% ? in p vo l 100Vrms, 60Hz. Da vo hnh
P1.1. Suy ra dng sng ra.

1.10 Thit k mt b ngun cung cp theo kiu mch nn bn k nhn tn hiu vo l


120Vrms, 60Hz v yu cu mc in p ra ln nht l 17V v thp nht l 12V. Ngun cung cp
s cung cp in p ngun cho mch in t yu cu mc dng khng i l 1A. Hy xc nh
cu hnh mch, t s vng dy ca bin p, tr s ca t. Gi s cc diode v bin p l l tng.

1.11 Nu ti u ra ca mch nn ton k l 10k , tr s ca t l bao nhiu cn thit duy tr


mc in p ra khng thay i thp nhiu so vi 10% ? Tn hiu vo l 110Vrms, 60Hz. Da vo
hnh 1.3. Suy ra dng sng ra.

1.12 Lp li bi tp 1.11, vi kiu ngun cung cp l mch chnh lu ton k.

-21-

1.13 Hy xc nh thng s ca t trong mch hnh 1.31S, khi a = 6 v RL = 50 . Mc in p


nh nht n ti cn phi c khng suy gim qu 20%.

1.14 Nu mt diode zener c mc trong mch nh hnh P1.6, tr s in tr Ri l bao nhiu


duy tr in p trn ti mc 10V (VZ) khi dng ti thay i t 50mA n 500mA v in p
vo thay i t 15V n 20V ? Hy xc nh mc cng sut nh mc cn thit cho in tr v
diode zener

-22-

1.15 Mch n nh bng zener nh hnh P1.6, s dng diode zener 20V duy tr in p
khng i 20V trn in tr ti RL. Nu in p vo thay i t 32V n 43V v dng ti bin
thin t 200mA n 400mA, hy tnh chn tr s ca Ri gi in p khng i trn ti. Xc
nh cng sut nh mc cn thit cho in tr v diode zener.

1.16 Mch n nh zener nh hnh P1.7, s dng diode zener 9V gi mc in p hng 9V


trn ti, vi in p vo thay i t 18V n 25V v dng ra thay i t 400mA n 800mA. Gi
s RZ = 0.
a) Chn tr s cn thit cho Ri v xc nh mc cng sut yu cu nh nht ca in tr vo.
b) Xc nh mc cng sut nh mc ca diode zener.
c) Tnh bin thin ca in p ra nh nh nu RZ = 1 .

-23-

1.17 Gi s khng c tn hao trong cc diode nn ca mch nn ton k (hnh P.18) vi n = 2,


tr s ca Ri cn thit l bao nhiu duy tr VL mc 16V vi dng ti l 500mA, s dng
zener 16V? VS thay i trong khong t 110Vrms n 120Vrms, 60Hz. Gi s RZ = 0. Mc in
p mch n nh cn phi khng c gim nhiu hn 8V trn mc VZ.

1.18 Gi s khng c st p cc diode chnh lu trong mch hnh P1.8, v n = 2, tr s ca Ri


cn thit l bao nhiu duy tr VL = 16V vi mc dng ti khong 500mA ? in p vo ca
bin p l 110Vrms n 120Vrms, 60Hz. in p ra ca mch nn c lc khng th thay
i nhiu hn 5V. Hy xc nh cng sut nh mc cn thit cho in tr v diode zener.

-24-

1.19 Thit k b ngun n p ton k s dng bin p im gia 4:1 v diode zener 8V, 1W
cung cp 8V khng i cho ti thay i t 200 n 500 . in p vo ca bin p l 120Vrms,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
a) IZmax v IZmin. b) Ri v VSmin. c) tr s t cn thit. d) n nh theo % khi RZ = 2 .

1.20 Thit k b ngun n p ton k s dng bin p im gia 5:1 v diode zener 8V, 2W
cung cp 8V khng i cho ti thay i t 100 n 500 . in p vo ca bin p l 120Vrms,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
a) IZmax v IZmin. b) Ri v VSmin. c) tr s t cn thit. d) n nh theo % khi RZ = 2 . e)
Cng
sut nh mc ca Ri.

-25-

1.21 S dng cc gi tr ca in p vo i vi Ri ca bi tp 1.20, nhng dng zener 12V, tr s


ca Ri cn phi c l bao nhiu duy tr 12V u ra nu ti thay i t 20mA n 600mA ?
Thng s ca t cn phi c l bao nhiu ?

1.22 S dng mch hnh P1.8, v gi s khng c tn hao cc diode nn, tr s ca Ri l bao
nhiu duy tr 12V trn ti bng cch s dng diode zener 12V, khi VS t 105Vrms n 120Vrms,
60Hz ? in p ra ca mch nn gim 20% do thng s ca t C1, v ti thay i t 50mA n
500mA. Thng s ca t l bao nhiu ? cho n = 2.

-26-

1.23 Vi sng vo l 10sin t, dng sng ra l nh th no i vi cc mch xn hnh P1.9 ?


Gi s rng tt c cc diode l l tng vi V = 0 v Rf = 0.

1.24 a) in p vo vi ca mch xn hnh P1.11a, thay i tuyn tnh t 0 n 150V. V dng


in p ra trn cng mt th theo thi gian vi in p vo. Gi s cc diode l tng.
b) Lp li nh phn a) cho mch hnh P1.11b.

-27-

1.25 a) V dng sng ra ca mch hnh P1.12a, khi vi = 9sin1000t V. Th hin cc gi tr ln


nht v nh nht trn dng sng v phng trnh ca ng cong ti cc thi im khc nhau.
Gi s cc diode l l tng.
b) Lp li phn a) cho mch hnh P1.12b.

1.26 Thit k mt mch xn nhn c dng sng ra nh hnh P1.13, t dng sng vung
i xng u vo l 10V. Gi s V = 0,7V.

-28-

1.27 Kiu mch xn nh th no cn phi c nhn c cc dng sng cho hnh P1.14 ?
Gi s tn hiu vo l 10sin t V. V mch v ghi tn cho mch.

1.28 Thit k mch ghim c mc ghim + 2V i vi dng sng vung u vo ca mch nh


hnh P1.15. Bin nh nh ca sng vo vung i xng l 4V, chu k l 100 s.

-29-

1.29 Mt ngun in p sin 10kHz l tng c cc mc nh 10V so vi t c p t n


mch ghim bng diode hnh P1.16. Gi s R
, RS = 0, C = 1 F, diode c Rr = , Rf = 0, v
V = 0. V dng sng ra.

1.30 Tn hiu th hin hnh P1.16, c tn s l 1kHz c t vo mch, vi cc gi tr RS = 0,


R = 10k , Rf = 0, Rr = , v V = 0.
a) V dng sng ra vo.
b) Lp li phn a) nu R = 1k , v C = 0,001 F.

-30-

1.31 Thit k mt mch ghim cho dng sng ra nh hnh P1.17. Gi s t cho sn l 0,1
F
v tn hiu vo vi = 5sin25000t V. Cho V = 0,7V.

-31-

p s mt s bi tp b sung c gch di dng.

-32-

E. Cu hi v transistor hiu ng trng cng tip gip-JFET.


6.1. Gii thiu v cc JFET.
1. Ba in cc ca FET c gi l . . .
a. Ngun, cng v mng;
b. Emitter, base v collector;
c. Emitter, mng, v base;
d. Ngun, base, v mng.
2. K hiu mch no sau y l ca JFET knh N ?.

3. Dng in chy qua knh dn ca mt JFET c iu khin bng . . . . . .


a. in p phn cc thun gia cng v ngun;
b. in p phn cc thun gia cng v mng;
c. in p phn cc ngc gia cng v ngun;
d. Dng cng chy qua tip gip cng / ngun.

4. Dng mng ca mt JFET knh N s gim xung khi . . . . . . .


a. in p cng thay i theo chiu m;
b. in p cng thay i theo chiu dng;
c. Dng cng tng ln;
d. Dng cng gim xung.

5. Mt s JFET c cu trc i xng, tc l c th i ln nhau gia . . . . .


a. Hai cc cng v mng;
b. hai cc cng v ngun;
c. hai cc ngun v mng;
d. hai cc bt k.

6.2. So snh JFET v BJT.


6. JFET khc vi BJT bi v JFET . . . . . .
a. ch c th khuych i in p;
b. ch c th khuych i dng in;
c. l dng c iu khin bng in p;
d. c tr khng vo thp.
7. H s khuych i ca BJT l . . . . . . .v h s khuych i ca JFET l . . . . . .
a. beta, h s truyn t;
b. h s truyn t, beta;
c. beta, beta;
d. h s truyn t, h s truyn t.

-33-

6.3. Cc thng s ca JFET.


8. Dng mng khi in p cng bng 0V l . . . . . .
a. id;
b. ID;
c. IDSS;

d. khng phi cc thng s trn.

9. in p cng - ngun lm ngng dng mng ca JFET l. . . . . .


a. VGS;
b. VGS(off);
c. VGS(stop);
d.VP.

10. Cng thc id / vgs l biu thc tnh cho thng s . . . . .


a. IDSS;
b. VGS(off);
c. VGS(stop);
d. gm.

11. in p mng - ngun khi dng mng tr nn gn bng hng s c gi l in p . . . . . .


a. Tht [Pinch-off];
b. ngt [cutoff];
c. bo ho;
d. khng i.

12. h dn khi in p cng - ngun bng 0 l . . . . .


a. gm0;
b. .gm;
c. gm(cng);

d. gm.

6.4. Phn cc cho mch khuych i JFET ngun chung.


13. Kiu phn cc no khng c dng cho mch JFET ?.
a. Phn cc kiu phn p;
b. Phn cc kiu hi tip in p;
c. Phn cc ngun;
d. t phn cc.

14.Cc mch t phn cc cn s lng linh kin t nht v cng c u im l . . . . .


a. Duy tr dng mng khng i khi c cc thay i v cc thng s ca JFET;
b. Duy tr dng cng khng i khi c cc thay i v cc thng s ca JFET;
c. Duy tr VGS khng i khi c cc thay i v cc thng s ca JFET;
d. Duy tr gm khng i khi c cc thay i v cc thng s ca JFET.

15. Kiu mch phn cc no ca JFET gi dng mng khng i tt nht khi c thay i v cc
thng s ca JFET ?
a. Phn cc kiu phn p;
b. Phn cc kiu hi tip in p;
c. Phn cc ngun;
d. T phn cc.

-34-

6.5. Cc thng s tn hiu ca JFET.


16. H s khuych i in p tn hiu ca mt mch khuych i JFET l . . . . . .
a. x rd;
b. rd / rs;
c. rs / rd;
d. gm x rd.

17. Gim in tr ti (R L) s lm . . . . . . . . v h s khuych i in p ca mch khuych i


JFET.
a. gim;
b. khng thay i;
c. tng mt t;
d. tng ln.

18. Tr khng vo ca mch khuych i ngun chung bng JFET l . . . . . . . .


a. Thng cao hn so vi tr khng vo ca mch khuych i bng BJT;
b. Bng vi tr khng tn hiu ni t i vi cc cng;
c. D c iu chnh bi s thay i cc in tr ni vi cc cng;
d. Tt c cc trng hp trn.

19. Tr khng ra ca mch khuych i JFET ngun chung l bng vi . . . . . . .


a. RL;
b. Rd;
c. RL//Rd;
d. Rd / Rs.

6.6. Phn tch cc mch khuych i bng JFET.


20. Bi ton phn tch mch khuych i JFET d dng hn nu bit cp thng s no sau y ?.
a. IDSS, VGS(off);
b. gm, IDSS ;
c. gm, VGS;
d. VGS, VGS(off).

21. Mc xp x VGS hp l dng phn tch cc mch JFET l . . . . .


a. 0V;
b. 0,3V;
c. 0,7V;

d. 2V.

22. Gi tr gn ng hp l ca gm dng thit k cc mch JFET l . . . .


a. 100mS;
b. 10mS;
c. 3mS;

d. 0,2mS.

6.7. Mch khuych i mng chung.


23. H s khuych i in p ca mch khuych i JFET kiu mng chung xp x bng . . . . . .
a. 100;
b. 10;
c. 3;
d. 1.

24. Mch khuych i mng chung c c im . . . . .


a. Tr khng vo cao v tr khng ra thp;
b. Tr khng vo thp v tr khng ra cao;
c. Tr khng vo thp v tr khng ra thp;
d. Tr khng vo cao v tr khng ra cao.

-35-

6.8. JFET knh N v knh P.


25. K hiu mch no sau y l dng cho JFET knh P ?

6.9. Cc mch chuyn mch bng JFET.


26. Khi JFET chuyn sang dn, th in tr gia mng v ngun nh hn so vi . . . . . .
a. 1 ;
b. RDS(on);
c. Rd;
d. 10 .

27. Chuyn mch bng JFET kiu ni tip khng hon ho, nhng vi iu kin in tr ti phi
ln hn nhiu so vi in tr . . . . . . . . . . th chuyn mch s cho chc nng ng.
a. Rg;
b. RDS(on);
c. Rd;
d. RDS(off).

28. Trong mch chuyn mch JFET kiu song song, JFET c mc . . . . . . . .
a. Ni tip vi ti v song song vi Rs;
b. Ni tip vi Rs v song song vi ti;
c. Ni tip vi ti v ni tip vi Rs;
d. Song song vi ti v song song vi Rs.

6.10. Sai hng trong cc mch JFET.


29. Trong mch hnh 6.37, in p DC trn cc cng o c l 0V, th sai hng c trong mch
l do:
a. in tr Rg h mch;
b. in tr Rg b ngn mch;
c. JFET b ngn mch gia cng v ngun;
d. mch hot ng bnh thng.

-36-

30. i vi mch hnh 6.37, cc in p DC u ph hp, nhng h s khuych i in p tn


hiu thp, nguyn nhn no gy sai hng c trong mch ?
a. T C3 b ngn mch;
b. C3 b h mch;
c. C2 b ngn mch;
d. C2 b h mch.

31. i vi mch hnh 6.37, in p DC o c trn cc mng l 12V, th sai hng c


trong
mch l do:
a. in tr C3 b ngn mch;
b. C3 b h mch;
c. JFET b ngn mch;
d. JFET b h mch.

32. mch hnh 6.38, nu in p trn cc cng l 2,8V v in p trn cc ngun v cc


mng
l 6V, c sai hng no vi mch khng?
a. JFET b ngn mch cc mng vi cc ngun;
b. JFET h mch cc mng vi cc ngun;
c. in tr Rg2 h mch;
d. mch c chc nng ph hp.

33. mch hnh 6.38, nu in p trn cc mng l 6V v in p trn cc ngun l 5,9V,


c
sai hng no i vi mch khng ?
a. JFET b h mch gia cc mng v cc ngun;
b. in tr Rg1 h mch;
c. in tr Rg2 h mch;
d. mch c chc nng ph hp.

-37-

34. Nu ngun tn hiu c tr khng ni l 5k v khi ni ngun tn hiu vo mch hnh 6.38,
s
lm cho my pht qu ti, c sai hng no trong mch khng ?
a. JFET b h mch gia cc mng v cc ngun;
b. JFET b ngn mch cng v ngun;
c. in tr Rg2 h mch;
d. mch c chc nng ph hp.

35. Trong mch hnh 6.39, nu mc in p iu khin bng 0V v mc in p tn hiu trn ti


bng
80mVnh-nh, c sai hng no vi mch ?
a. JFET h mch gia cc mng v cc ngun;
b. JFET b ngn mch gia cc mng v cc ngun;
c. in tr Rg h mch;
d. mch c chc nng ph hp.

36. Trong mch hnh 6.39, nu in p iu khin bng - 8V v in p tn hiu trn ti


bng
100Vnh-nh, c sai hng no vi mch ?
a. JFET h mch gia cc mng v cc ngun;
b. JFET b ngn mch gia cc mng v cc ngun;
c. in tr Rg h mch;
d. mch c chc nng ph hp.

-38-

F. Bi tp phn JFET.
[ Lu : Tt c cc bi tp di y u s dng JFET c cng cc thng s nh c tuyn
truyn t hnh 6.40. i vi cc bi tp nu c BJT trong mch th s dng thng s F(min) =
100 v c th thc hin sau khi bit v BJT ].
1. Tnh h dn ca JFET c c tuyn hnh 6.40 ti in p phn cc VGS = - 2V (s dng
thay i v in p VGS l 0,5V cho php tnh).

2. Tnh cc mc in p DC mch hnh 6.41.


VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .

-39-

VDS = . . . . . . . .

3. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 6.41.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

4. Nu in p o c ti cc ngun ca mch hnh 6.41, l 1V, tnh in p ti cc cng v


ti cc mng.
VG = . . . . . . .
VD = . . . . . . .

-40-

5. Hnh 6.42, l mch khuych i JFET t phn cc. Hy tnh cc gi tr sau:


VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout = . . . . . . . .

6. Hnh 6.43, l mch khuych i JFET phn cc kiu phn p. Tnh cc gi tr tnh: VG; VS;
VD; v VDS.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
VDS = . . . . . . . .

-41-

7. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 6.43.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

8. Tnh ID; VG; VS; VD; v VDS cho mch hnh 6.44.
ID = . . . . . .
VG = . . . . . . .
VS = . . . . . . .

-42-

VD = . . . . . . . .

VDS = . . . . . . . .

9. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 6.44.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

10. Tnh cc gi tr tnh cho mch hnh 6.45.


VD = . . . . . . .
VS = . . . . . . .
VG = . . . . . . . .

-43-

VDS = . . . . . . . .

11. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 6.45.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

12. Tnh cc gi tr sau y cho mch hnh 6.46.


VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .

-44-

VDS = . . . . . . .
.Vout= . . . . . . .
.

13. Hnh 6.47, l mt mch khuych i JFET t phn cc. Tnh cc gi tr sau:
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .
VDS = . . . . . . . .
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

14. Hnh 6.48, l mt mch khuych i JFET mng chung. Tnh cc gi tr sau:
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . .
zin = . . . . . . .
zout = . . . . . . .
. Av = . . . . . . .
Vout= . . . . . . . .
Ai = . . . . . . . .
A. p = . . . . . . .
.

-45-

15. Hy v dng sng ra ca mch hnh 6.49.

16. Hy v dng sng ra ca mch hnh 6.50.

-46-

G. Cu hi v MOSFET.
7.1. Gii thiu v cc MOSFET.
1. T MOS trong cu trc MOSFET l vit tt ca (cc k t gch chn) . . .
a. Material Of Semiconductor [vt liu bn dn] ;
b. Metal - Oxide - Semiconductor [kim loi - oxide - bn dn]; c. Most standard Semiconductor [cht
bn dn tinh khit nht] ; d. Khng phi cc trng hp trn.

2. cch ly cng knh JFET ph thuc vo tip gip PN phn cc ngc, nhng MOSFET s
dng cc lp mng bng . . . . . . . nh mt lp cch in gia cng v knh dn.
a. dioxide silicon;
b. thu tinh;
c. Cao su;
d. thu tinh cao cp.

7.2. MOSFET kiu ngho De - MOSFET.


3. K hiu mch ca D - MOSFET knh N l . . . . . .

4. Khi in p trn cng ca mt De - MOSFET knh N m v lm gim cc ht ti in, th


MOSFET c xem l ang lm vic ch . . . . . . .
a. Ngho;
b. Tng cng;
c. dn in;
d. cc b.

5. Dng mng c th chy qua mt De - MOSFET khi ang hot ng . . . . . . . a. ch ch


ngho;
b. ch ch tng cng; c. hoc ch
tng cng hoc ch ngho;
d. ch ch cc b.

6. Nu mt mch khuych i bng De - MOSFET c thit k c mc in p phn cc = 0


gia cng v ngun, th dng mng ti im lm vic tnh s bng . . . . . .
a. 0mA;
b. 10mA;
c. IDSS;
d. Rd / gm.

7. K hiu mch ca De - MOSFET knh P l . . . . . . .

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7.3. En - MOSFET.
8. K hiu mch ca En - MOSFET knh N l . . . . . . .

9. Dng mng c th chy qua mt En - MOSFET khi ang hot ng . . . . . .


a. ch ch ngho;
b. ch ch tng cng;
c. hoc ch tng cng hoc ch ngho;
d. ch ch cc b.

10. Mc in p cng - ngun cn thit lm cho dng mng ca En - MOSFET bt u chy


c gi l . .
a. ngt [cutoff];
b. chun b dn [cut-on];
c. bo ho [saturation];
d. ngng [threshold].

11. Vi in p cng - ngun bng 0, th mch chuyn mch En - MOSFET hot ng nh mt


mch . . . . . .
a. ng dy dn in;
b. ngn mch;
c. h mch;
d. in tr thp.

12. Khi mch chuyn mch En - MOSFET chuyn sang dn, th in tr gia mng v ngun s
thp hn so vi . . . . .
a. 1 ;
b. RDS(on);
c. Rg / gm;
d. Rd / gm.

13. Khi hot ng ch A (ch khuych i), En - MOSFET knh N cn phi c . . . . .


a. in p ti cc ngun dng hn so vi in p ti cc cng. b. in p ti cc ngun dng hn
so vi in p ti cc mng. c. in p ti cc cng dng hn so vi in p ti cc ngun. d. in
p ti cc cng m hn so vi in p ti cc ngun.

14. Kiu mch phn cc thng c s dng trong cc mch khuych i En - MOSFET l . . .
a. Phn cc hi tip mng; b. Phn cc ngun; c. T phn cc; d. Phn cc ngun dng hng.

15. K hiu mch ca En - MOSFET knh P l . . . . .

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7.4. S dng MOSFETs.


16. Khi lm vic vi cc MOSFET, cn phi bit cc lu s dng c bit, m mt trong s cc
im phng nga sau y l khng ng.
a. Tt c cc thit b v cc dng c cn phi c tip t.
b. Cc cc ca MOSFET cn phi c ni vi nhau khi chuyn ch v bo qun. c. Khng bao gi
tho hoc lp MOSFET khi ngun cung cp tt.
d. Cng nhn lm vic vi cc dng c MOSFET cn phi c vng ni t c tay.

7.5. Cc thng s ca MOSFET.


17. Thng s no sau y nu vt qu s lm cho FET b nh thng v dn.
a. V(BR)DSS;
b. IDSS;
c. VGS(th);

d. VGS(on).

18. in p phn cc cng - ngun c dng mng chy trong E - MOSFET l . . . . .


a. V(BR)DSS;
b. IDSS;
c. VGS(th);
d. VGS(on).

7.6. Cc ng dng ca MOSFET.


19. L do khin FET l cu kin l tng s dng cc tng u ca my thu l . . . . .
a. FET pht sinh nhiu ni thp hn so vi BJT.
b. khng th iu khin h s khuych i ca FET bng cch iu khin im phn cc.
c. FET c th lm vic nhit trn 500oC.
d. C a v b.

20. En - MOSFET l cu kin rt tt s dng trong cc mch chuyn mch bi v . . . . .


a. RDS(on) thng nh hn 10;
b. En-MOSFET thng h mch cho n khi c tn hiu iu khin lm cho En-MOSFETdn;
c. Ch cn mt mc cng sut nh cho mch iu khin;
d. Tt c cc trng hp trn.

21. Nhiu tn hiu c th c truyn trn cng mt ng dy l do s dng . . . . .


a. ghp knh theo thi gian;
b. sn phm ng dy n;
c. vic iu khin MOSFET mc ni tip;
d. vic tch tp m.

22. Mch chuyn i tn hiu DC hay tn hiu tn s thp thnh tn hiu tn s cao l . . . .
a. ghp knh [multiplexing];
b. hn ch [clipper];
c. ngt qung [chopper];
d. gii ghp [demultiplexing].

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23. Mch c ch to bng c hai loi MOSFET knh N v knh P c gi l mch . . . . . .


a. NP;
b. PN;
c. hai knh;
d. CMOS.

7. Sai hng trn cc mch FET.


24. Nu ngun tn hiu c tr khng vo 100k
ni vi mch hnh 7.33a, ngun tn hiu b qu
ti th kh nng h hng ca mch l do nguyn nhn no ?.
a. in tr Rg h mch;
b. in tr Rd b ngn mch;
c. in tr Rd h mch;
d. MOSFET hng.

25. i vi mch hnh 7.33a, nu in p trn cc mng l 9V v in p trn cc ngun v


cng l 0V, th sai hng c trong mch l do:
a. in tr Rg h mch;
b. in tr Rg b ngn mch;
c. MOSFET b hng;
d. mch lm vic ng.
26. i vi mch hnh 7.33a, nu in p trn cc mng l 16V v in p trn cc cng l 0V,
th sai hng c trong mch l do:
a. in tr Rd h mch;
b. in tr Rd b ngn mch;
c. in tr Rg b ngn mch;
d. mch lm vic ng.
27. i vi mch hnh 7.33b, nu in p trn cc mng l 6V v in p trn cc ngun v
cng l 6V, th sai hng c trong mch l do:
a. in tr Rg h mch;
b. in tr Rg b ngn mch;
c. MOSFET b hng;
d. mch lm vic ng.
28. Tt c cc in p DC o c trong mch hnh 7.33b, u ph hp, nhng in p tn hiu
trn cc mng l gn bng 0. Sai hng c trong mch l do:
a. in tr Rd h mch;
b. in tr Rd b ngn mch;
c. in tr RL b ngn mch;
d. in tr RL h mch.

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29. i vi mch hnh 7.34a, nu in p trn u vo iu khin l 5V v in p tn hiu trn ti


l 0V, th sai hng c trong mch l do:
a. in tr Rg h mch;
b. in tr Rg b ngn mch;
c. MOSFET b hng;
d. mch hot ng bnh thng.
30. i vi mch hnh 7.34b, nu in p trn u vo iu khin l 5V v in p tn hiu trn ti
gn bng 0V, th sai hng c trong mch l do:
a. in tr Rg h mch;
b. in tr Rg b ngn mch;
c. MOSFET b hng;
d. mch hot ng bnh thng.

H. Bi tp phn MOSFET:
1. Hnh 7.35, l c tuyn truyn t ca mt De - MOSFET. T c tuyn hy xc nh gi tr
ca VGS(off) v IDSS.
VGS(off) = . . . . . . .
IDSS = . . . . . . . .

2. Tnh VG, VS, VD, v VDS mch hnh 7.36, nu IDSS = 10mA.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .

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VDS = . . . . . . . .

3. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 7.36.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

4. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 7.36, nu bit gmo bng 6mS.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

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5. Tnh VG, VS, VD, v VDS mch hnh 7.37, nu IDSS = 2,5mA.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . . .

VDS = . . . . . . . .

6. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 7.37.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout = . . . . . . . .

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7. Hnh 7.38, l c tuyn truyn t ca mt En - MOSFET. T c tuyn hy xc nh gi tr


ca VGS(Th).
VGS(Th) = . . . . . . .

8. Tnh VG, VS, VD, v VDS mch hnh 7.39, cho ID(on) = 2mA.
VG = . . . . . . .
VS = . . . . . . .
VD = . . . . . . .
VDS = . . . . . . .

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9. Tnh tr khng vo (zin), tr khng ra (zout), h s khuych i in p (Av), v mc in p ra


(Vout) mch hnh 7.39, nu bit gm ti im tnh - Q bng 3mS.
zin = . . . . . . .
zout = . . . . . . .
Av = . . . . . . . .
Vout= . . . . . . . .

10. Hy tnh mc tn hiu ra ca mch chuyn mch hnh 7.40, khi MOSFET ngng dn (off),
v khi MOSFET dn (on).
Chuyn mch m (on) = . . . . . . . . .
Chuyn mch ng (off) = . . . . . . . . . . .

11. Hy tnh mc tn hiu ra ca mch chuyn mch hnh 7.41, khi MOSFET ngng dn (off),
v khi MOSFET dn (on).
MOSFET ngng dn (off) = . . . . . . . . .
MOSFET dn (on) = . . . . . . . . . . .

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12. Hy thit k v v mt mch chuyn mch trong chuyn mch m (dn - on) v ng
(ngng dn - off) in p ngun cung cp 15V n ti 100. Ngun iu khin s nhn mch
chuyn mch nh mt tr khng 100k. c tuyn truyn t ca En - MOSFET c s dng
trong mch cho hnh 7.42.

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Bi tp b sung phn JFET


D4.1 Thit k mch khuych i chung cc ngun Common Source (CS) bng JFET c RL = 10k,
VDD = 12V, Rin = 500k, v Av = - 2. S dng mch hnh 4.16a. Chn im-Q l VDSQ = 6V, VGSQ = - 1V,
IDQ = 1mA, v gm = 2500A.
(s: RD = 4,78k; RS = 1,22k; R1 = 509k; R2 = 27M; v Ai = - 100).

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D4.2 Thit k li mch khuych i CS bng JFET bi tp D4.1, cho transistor c VGSoff = - 4V
v IDSS = 6mA.
(s: R1 = 500k; R2 = ; RD = 1,61k; RSdc = 390; RSac = 223; v Ai = - 100).

D4.3 Thit k mch khuych i CD bng JFET (hnh 4.19) cho h s khuych i dng in
bng 15 cho ti l RL = 20k s dng VDD = 12V v Rin = 400k. S dng JFET knh-n c
VGSoff = - 3V, v IDSS = 6mA. Gi s VDSQ = VDD/2 v IDQ = 0,4IDSS. Tnh tr s ca cc in tr
v h s khuych i in p ca mch khuych i.
(s: RSdc = 2,5k; RSac =1,25k; R1 = 676k; R2 =980k; Av = 0,75).

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D4.4 Xc nh tr s ca cc in tr v h s khuych i dng in cho mch khuych i


bootstrap bng JFET kiu SF theo cc yu cu l Rin = 200k, RL = 20k, v VDD = 10V. imQ c chn ti: VDSQ = 5V, IDQ= 0,5mA, VGSQ = - 1,5V, gm = 4mS. S dng kiu mch hnh
4.22.
(s: RG = 62,8k; RS1 = 3k; RS2 = 7k; Ai = 9,3).

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4.1 H c tuyn vng lm vic ca mt transistor JFET knh-n c th c th gn ng bng


phng trnh:
iD = 0,5(4 + vGS)2 mA
trong mch c cc tr s sau: RS = 500, RD = 2k, Rin = 100k, IDQ = 5mA, v VDD = 20V.
Hy xc nh cc thng s sau: a) VGSQ; b) VD ; c) VDSQ; d) R1 v R2 .
Tham kho hnh P4.1.

4.2 Trong mch hnh 4.16a, khi c R1 = 21k, R2 = 450k, RS = 500, RD = 1,5k, RL =
4k, v VDD = 12V, khi VDSQ = 4V, hy xc nh cc thng s sau y:
a) IDQ; b) VGSQ; c) Rin; d) Av khi gm = 3,16mS; e) Ai.

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4.3 Trong mch hnh 4.16a, RD = 2k, RL = 5k, Rin = 100k, RS = 300, v VDD = 15V. Xc
nh cc tr s ca R1 v R2 cn thit transistor lm vic mc 4mA khi VGSoff = - 4V v IDSS
= 8mA. Tnh h s khuych i in p v dng in ca mch khuych i.

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4.4 a) Thit k mch khuych i chung cc ngun [Common-Source tc CS] (hnh P4.1) s dng
JFET knh-p p ng cc thng s yu cu l Av = - 10 v Rin = 20k. Gi thit l im-Q c
chn ti IDQ = - 1mA, VDSQ = -10V, VGSQ = 0,5V.
b) Tnh Ai, R1, R2, RS, v RD. (Da vo c tuyn hnh P4.2. Lu rng c th c chia tch RS
v mch r cho RS).

4.5 Lp li bi tp 4.4 khi RL l 20k; c ghp vo cc mng qua mt t ghp tng. Ch l c


th cn phi chn im-Q khc.

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4.6 Thit k mch khuych i CS s dng MOSFET nh mch hnh P4.3. Cho RL = 1k, Av
= - 1, Rin = 15k. im-Q c chn ti VGSQ = 3V, IDQ = 7mA, VDSQ = 10V, trong gm =
2300S. Xc nh tr s cho tt c cc cu kin cn li.

4.7 Thit k mch khuych i CS s dng JFET knh-n cho kiu mch nh hnh P4.4, vi Av
= - 1, VDD = 12V, RL = 1k, Rin = 15k, IDSS = 10mA, v VGSoff = - 4V. S dng IDQ = IDSS / 2.

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4.8 Thit k mch khuych i CS s dng JFET knh-n khi c RL = 4k, Av = - 3, v Rin =
50k. Gi s l transistor s dng c VGSoff = - 4,2V v IDSS = 6mA. S dng mch hnh P4.4
vi VDD = 20V. Xc nh Ai.

4.9 Thit k mch khuych i CS bng JFET knh-n c AV = -2, Ai = -20, VDD = 12V, v RL =
5k. Xc nh tr s ca tt c cc cu kin v mc cng sut nh mc ca transistor. (mch c
th cn phi thay i p ng thit k). Transistor c chn c VGSoff = - 5V v IDSS = 8mA.
S dng IDQ = 0,4IDSS v VDSQ = VDD/2. Xem mch hnh P4.4.

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4.10 Thit k mch khuych i CS bng JFET knh-p vi AV = - 4, Ai = - 40, RL = 8k, v


VDD = - 16V. Transistor c chn c VGSoff = 3V v IDSS = - 7mA, s dng IDQ = 0,3IDSS v
VDSQ = VDD/2. S dng mch hnh P4.4. Xc nh cng sut nh mc ca transistor.

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4.11 Thit k mch khuych i CS bng JFET knh-p vi ti l 5k, s dng mch hnh
P4.4. Cho VDD = - 20V, AV = - 2, Ai = - 20, VGSoff = 6V v IDSS = - 5mA. Xc nh cng sut nh
mc ca transistor.

4.12 Thit k mch khuych i chung cc ngun (CS) bng MOSFET knh-n, s dng
transistor 3N128 (ph lc D) cho ti l 10k vi h s khuych i in p Av = - 10. S dng
mch hnh P4.3. Chn im-Q khi Rin > 10k, bng cch s dng h c tuyn th hin theo cc
thng s k thut trang cui ca phn bi tp ny.

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4.13
Thit k mch khuych i bng MOSFET knh-n, chung cc ngun (CS) s dng
transistor 3N128 (ph lc D) cho ti l 2k vi Av = - 4 v Rin > 100k. Gi s rng, im-Q
c chn l VGSQ = - 0,6V, VDSQ = 10V, IDQ = 10mA, VDD = 20V. Xem mch hnh P4.3.

4.14
Phn tch mch khuych i CS bng JFET knh-n nh mch hnh P4.5, khi c ti l
20k, RD = 8k, VDD = 24V, v Rin = 50k. Chn im-Q c VGSQ = - 1,5V, VDSQ = 12V, IDQ =
1mA, v gm = 2,83mS. Hy tnh Ai, Av v tr s ca tt c cu kin.

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4.15 Nu RS mch hnh P4.4, c r mch bng t, th h s khuych i in p l bao


nhiu ? Gi s rng im-Q c chn c gm = 1,5mS, RD = 3,2k, v RL = 5k. Xc nh
h s khuych i dng in khi RS = 500, R1 = 200k, v R2 = 800k.

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4.16 H s khuych i in p Av ca mch hnh P4.4, l bao nhiu nu tn hiu c cung


cp vo mch khuych i c in tr ca ngun in p l Ri = 10k? Cho RD = 10k, v RL =
10k, RS = 500, gm = 2mS, R1 = 25k, v R2 = 120k.

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4.17 Cho mch nh hnh P4.6, gi s rng RS c r mch bng mt t in. VDD = 15V, RD
= 2k, RL = 3k, RS = 200, R1 = 500k, IDSS = 8mA, v VGSoff = - 4V. Hy xc nh Av, Ai,
Rin, v im-Q cho mch khuych i.

4.18 Cho mch hnh P4.6, gi s rng VDD = 20V; RD = 2k; RL = 10k; RS = 200; R1 = 1M;
IDSS = 10mA, v VGSoff = - 5V. Hy xc nh im-Q, Av, Ai, Rin, v cho mch khuych i.

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4.19 Cho mch hnh P4.6, gi s rng VDD = 20V, RD = 2k, RL = 6k, RS = 100, R1 = 1M,
IDSS = 10mA, v VGSoff = - 5V. Hy xc nh im-Q, Av, Ai, Rin, v cho mch khuych i.

4.20 Cho mch khuych i CS nh hnh P4.1, s dng JFET c IDSS = 2mA, v gm0 =
2000S. Nu tr s ca RD = 10k, RS = 200, th h s khuych i in p Av l bao nhiu i
vi cc gi tr ca VGSQ sau y ?
a) VGSQ = 1V; b) VGSQ = 0,5V; c) VGSQ = 0V.

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4.21 Mch khuych i CS hnh P4.6, vi transistor c VGSoff = - 4V, IDSS = 4mA, v rDS =
500. Nu RD = 2k, RL = 4k, v RS = 200, th h s khuych i in p Av ca mch l
bao nhiu vi VGSQ = - 1V ? Av s nh th no khi rDS t n v cng ?

4.22 Thit k mch khuych i CS bng MOSFET knh-n nh mch hnh P4.3, khi c RL =
4k, Av = - 5, v Ai = - 10. Gi s rng, im-Q chn c VDSQ = 10V, VGSQ = 4V, IDQ = 2mA,
v gm = 4000S.

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4.23 Cho mch nh hnh P4.7, c Ri = 50k, R1 = 100k, R2 = 800k, RD = 4k, RL = 6k,
RS = 200, v VDD = 20V, xc nh cc thng s sau khi s dng FET c VDSQ = 6V, gm =
2,5mS:
a) IDQ, VGG, v VGSQ
b) Av, Rin, v Ai.

4.24
Cho mch nh hnh P4.7, nu loi b R2, transistor FET lm vic mc dng l 2mA.
Tr s ca cc cu kin l Ri = 100k, R1 = 400k, RD = 3k, RL = 5k, v VDD = 12V. Xc
nh cc thng s sau khi s dng transistor c IDSS = 8mA, v VGSoff = - 4V:
(a) RS; (b) Av, Rin, v Ai.

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4.25 Thit k mch khuych i lp li-cc ngun (SF) bng JFET knh-p nh hnh P4.8, vi
Rin = 20k, nhn c h s khuych i in p Av gn bng 1. Tnh Ai, R1, R2, v RS. S
dng h c tuyn cho hnh P4.2.

4.26 Lp li bi tp 4.25, khi c ti l 20k c ghp t vi mch khuych i.

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4.27 Thit k mch khuych i bng MOSFET kiu mng-chung (CD) khi c RL = 100, Ai =
200, v Rin = 100k. S dng transistor c VGSoff = - 6V v IDSS = 20mA. Xc nh Av v gi tr
ca tt c cc in tr. Mch s dng hnh P4.9.

4.28 Thit k mch khuych i CD bng MOSFET knh-n, trong Rin = 120k, Ai = 100, RL
= 500, VDD = 20V, v chn transistor c VGSoff = - 5V v IDSS = 15mA. S dng mch hnh
P4.9, vi IDQ = 0,6IDSS v VDSQ = VDD/2.

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4.29
Thit k mch khuych i lp li cc ngun (SF) s dng JFET knh-n cho h s
khuych i dng l 100 v in tr vo l 500k. Ti l 2k. Chn im-Q theo cc tham s
l: VDSQ = 8V, IDQ = 5mA, VGSQ = - 1V, v gm = 4mS. Xc nh cc in tr, h s khuych i
in p v v mch khi VDD = 10V.

4.30 Lp li bi tp 4.29 nhng bng transistor khc vi gi tr ca cc thng s l:


VGSoff = -3V, IDSS = 10mA.

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4.31 Thit k mch nh hnh 4.21, khi c VDD = 16V v RL = 8k. S dng transistor c
VGSoff = - 3,33V, IDSS = 10mA. Xc nh ton b tr s ca cu kin, Ai, v Av khi c Rin = 12k.

4.32 Da vo bi tp 4.31, xc nh ton b tr s ca cu kin, Ai, v Av khi c Rin = 200k .

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Ph lc D: Trang s liu ca hng ch to


(Appendix D: Manufacturers Data Sheets)

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p s mt s bi tp (bi tp c gch di dng) .

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