KHOA CNG NGH THNG TIN

B MN IN T - VIN THNG
----o 0 o----

GIO TRNH
THC TP IN T & K THUT S 1
(PHN IN T)

Danh sch nhng ngi bin son:

ThS. V Thnh Vinh (Ch bin)
KS. V Mnh Thnh.
KS. Nguyn Vn Thng
KS. V Sn Hon

THI NGUYN, THNG 1/2006

Thc tp K thut in t 1

B mn in t -Vin thng
Bi 1. CC LOI DIODE

1. MC CH CHUNG
Bi th nghim ny s kho st c tnh ca cc loi Diode: Si-Diode, Ge-Diode,
Zenner Diode, Diode pht quang (LED) v cc ch lm vic ca Diode.
Kho st ng dng ca Diode trong cc mch: Mch hn ch v dch mc tn
hiu dng Diode, s chnh lu v lc ngun, b hnh thnh tn hiu.
2. C S L THUYT
thc hnh tt c bi th nghim yu cu sinh vin cn nm r mt s im
sau:
Hiu r c c tnh ca mt ghp p-n khi c nh hng ca in trng
ngoi.
V v gii thch c ng c tuyn Von-Ampe ca Diode.
Tm hiu nguyn l cc mch ng dng Diode v vai tr ca Diode trong mch
hn ch v dch mc tn hiu, mch chnh lu v lc ngun, b hnh thnh tn hiu:
Si v Ge -- Diode khc nhau v thng s. Do in p cc T1u t ln SiDiode v Ge-Diode diode thng l khc nhau.
Cch xc nh u A v K ca Diode.
Cch xc nh u A v K ca Diode Zenner. c thng s n p ca Diode
Zenner trc khi th nghim.
3. NI DUNG THC HNH
3.1. THIT B S DNG
Trong bi th nghim ny c s dng cc thit b sau:
Thit b chnh cho thc tp in t tng t ATS-11
Khi th nghim AE-101N cho thc tp v Diode (Gn ln thit b chnh ATS11 N).
Ph tng: Dy c cht cm hai u.
Dao ng k 2 knh.
l cc thit b ti thiu c th kho st c bi th nghim. Ngoi ra ta c
th s dng thm mt s thit b o khc nh ng h vn nng hin s c th o
th v dng ti nhng im m ta mun kho st.

Thc tp K thut in t 1

B mn in t -Vin thng

3.2. CP NGUN V NI DY
Khi AE-101N cha 4 mng s Al-l...4, vi cc cht cp ngun ring. Khi s
dng mng no cn ni dy cp ngun cho mng s . t (GND) ca cc mng
s c ni vi nhau do ch cn ni t chung cho ton khi AE- 101 N.
1. B ngun chun DC POWER SUPPLY ca thit b ATS-11N cung cp cc th
chun 5V, 12V c nh.
2. B ngun iu chnh DC ADJUST POWER SUPPLY ca thit b ATS- 11 N cung
cp cc gi tr in th mt chiu 0...+15V v 0...-15V. Khi vn cc bin tr chnh
ngun, cho php nh gi tr th cn thit. S dng ng h o th DC trn thit b
chnh hoc dng ng h s xc nh in th t.
3. Khi thc tp, cn ni dy t cc cht cp ngun ca ATS-11N ti trc Tip cho
mng s cn kho st.
Ch : Cm ng phn cc ca ngun v ca ng h o.
3.3. CC BI THC TP
3.3.1. C TRNG CA DIODE
Th nghim vi cc diode thc hin trn mng s hnh A1-1 .

3.3.1.1. Si - DIODE (Silicon Diode)

3.3.1.1.1. Nhim v
Sinh vin xc nh bng thc nghim c trng Volt -Ampe ca Si-Diode. Da
trn kt qu kho o c, nu c im mc Si-ioe trong s in t.
3.3.1.1.2. Nguyn l hot ng

Thc tp K thut in t 1

B mn in t -Vin thng

Phn cc thun: Cung cp in p +12V. Chit p P1 iu chnh in p t

vo hai u Diode. Khi P1 t Min, in p t ln hai u Diode l nh. Vn bin
tr P1 t Min- Max, in p tng khi in p t 0,6V, diode dn. Dng in qua
Diode c mA. Tng in p t vo Diode, dng in qua Dode tng theo. y l tnh
cht phn cc thun ca Diode.
Phn cc ngc: Cung cp in p vo - 12V. Chit p P1 iu chnh in p
t vo hai u Diode. Khi s c mt dng in nh c A (dng tri) chy qua
diode- y l tnh cht phn cc ngc ca Diode. i vi Si - Diode dng tri rt
nh.
ng c tuyn cng tc ca Si - Diode c dng nh sau:

3.3.1.1.3. Cc bc thc hin

a) Si - Diode phn cc thun
Trong phn ny chng ta s kho st c trng ca Diode Silic khi n c phn
cc thun. kho st c phn ny chng ta thc hin tun t cc bc sau :
1. Dng dy ni A vi A1 . Ni ngun + 12V vi cht V cho cho mng mch A1-1
4

Thc tp K thut in t 1

B mn in t -Vin thng

mc phn cc thun cho diode D1 .

2. Mc cc ng h o:
Ni cc cht ng h o (V) ca mch A1-1 vi ng h o th hin s
DIGITAL VOLMETER ca thit b chnh ATS - 1 in. Khong o t 20V. ng h
o dng qua diode: Ni cc cht ng h o (mA) ca mch A1-1 vi ng h o th
hin s DIGITAL mA METER ca thit b chnh ATS- 11 N. Khong o t 20mA.
Ch : Cm ng phn cc ca ngun v ng h o.
3. Bt in ngun nui cho thit b ATS -11N. Vn bin tr P1 cc i. Ghi gi
tr dng chy qua diode IF v st th UF trn diode vo bng A1.1 .
4. Gim tng bc bin tr P1. Ti mi bc ghi gi tr dng chy qua v st th
trn diode vo bng A1.1. Ch xc nh v tr ngng m ti dng qua diode c
s thay i t ngt.

1) Si - Diode phn cc thun

2) Si - Diode phn cc ngc

Hnh A1-1 a: S th nghim vi Si - Diode

Bng A1.1
IF
UF

b) Si Diode phn cc ngc

1. Ni ngun - 12V vi cht V cho mng mch A1-1 mc phn cc ngc cho
Diode D1 trong mng A1-1 nh hnh A1-1a2.
2. ng h o dng hin s DIGITAL mA METER ca thit b chnh ATS- 11 N.
Khong o t 2mA.
3. Bt in ngun nui cho thit b ATS -11N. Vn bin tr P1. Ghi gi tr dng chy
qua diode IR v st th UR trn diode vo bng A1.2.
5

Thc tp K thut in t 1

B mn in t -Vin thng
Bng A1.2

IR
UR

4. Vi kt qu o c trn bng A1.1 v A1.2, v th biu din c trng Volt Ampe ca Si-Diode, I = f(V) trong dng I biu din trn trc y v st th V trn
trc x. Nhnh thun v gc phn t th I, nhnh ngc v gc phn t th 3.3.
5. Nhn xt kt qu v c im mc thun ngc ca Si - Diode v c trng Volt Ampe ca Si-Diode.
3.3.1.2. GE - DIODE (Germanium Diode)
3.3.1.2.1. Nhim v
Sinh vin xc nh bng thc nghim c trng Volt-Ampe ca Ge-Diode. Da
trn kt qu, nu c im mc diode trong s in t.
3.3.1.2.2. Nguyn l hot ng
Cng tng t nh Si - Diode ta kho st c trng ca Ge-diode cho c hai
trng hp phn cc thun v phn cc ngc.
ng c tuyn cng tc ca Ge - Diode c dng nh sau:

3.3.1.2.3 Cc bc thc hin

a) Ge - Diode phn cc thun.
1.Dng dy ni A vi A2. Ni ngun +12V vi cht V cho cho mng mch Al-l
mc phn cc thun cho diode D2 trong mng A1-1 nh hnh A1-1 b1 .
2. Mc cc ng h o:
ng h o st th trn diode: Ni cc cht ng h o (V) ca mch A1-1 vi
ng h o th hin s DIGITAL VOLMETER ca thit b chnh ATS - 11 N. Khong
o t 20V.
6

Thc tp K thut in t 1

B mn in t -Vin thng

ng h o dng qua diode: Ni cc cht ng h o (mA) ca mch Al-l vi

ng h o th hin s DIGITAL mA METER ca thit b chnh ATS-11N. Khong
o t 20mA.
Ch : Cm ng phn cc ca ngun v ng h o.
3. Bt in ngun nui cho thit b ATS -11N. Vn bin tr Pl cc i. Ghi gi tr
dng chy qua diode IF v st th UF trn diode vo bng A1.3.
4. Gim tng bc bin tr Pl. Ti mi bc ghi gi tr dng chy qua v st th
trn diode vo bng A1.3. Ch xc nh v tr ngng m ti dng qua diode c
s thay i t ngt.

1) Ge - Diode phn cc thun 2) Ge - Dioe phn cc ngc

Hnh A1 - 1b: S th nghim vi Ge- Diode
Bng A1.3
IF
UF
b) Ge - Diode phn cc ngc
1. Ni ngun -12V vi cht V cho mng mch A1-1 mc phn cc ngc cho
Diode D2 trong mng A1-1 nh hnh A1-1b2.
ng h o dng hin s DIGITAL mA METER ca thit b chnh ATS-11 N.
Khong o t 2mA.
2. Bt in ngun nui cho thit b ATS -11N. Vn bin tr P1. Ghi gi tr dng chy
qua diode IRv st th UR trn diode khi vn bin tr Pl vo bng Al.2.
Bng A1.4
IR
UR

Thc tp K thut in t 1

B mn in t -Vin thng

3. vi kt qu o c trn bng A1.1 v A1.2, v th biu din c trng Volt Ampe ca Ge-Diode, I = f(V) trong dng I biu din trn trc y v st th V trn
trc x Nhnh thun v gc phn t th I, nhnh ngc v gc phn t th 3.3.
4. Nhn xt kt qu v c im mc thun ngc ca Ge-Diode v c trng Volt Ampe ca Si-Diode. So snh c trng V-A gia cc loi Si v Ge.
3.3.1.3. Diode n p
3.3.1.3.1. Nhim v
Sinh vin xc nh bng thc nghim c trng Volt-Ampe ca Zener-Diode.
Da trn kt qu, nu c im mc Zener-Diode trong s in t.
3.3.1.3.2. Nguyn l hot ng

1) Zener- Diode phn cc thun

2) Zener - Diode phn cc ngc

Bin tr Pl iu chnh in p t vo hai u Diode-zenner.

Khi phn cc thun cho Diode-zenner, diode hot ng bnh thng.
Khi phn cc ngc vi in p ln, diode lm vic ch nh thng.
Dng in to nn nh hiu ng thc l v hiu ng Zenner. Dng qua diode ln (nn
thng dng diode loi Si). Khi in p trn diode Zenner lun gi n nh.

Vng (3) ca c tuyn (vng b nh thng) c s dng n nh in p.

3.3.1.3.3. Cc bc thc hin
a) Zenner - Diode phn cc thun
1 Dng dy ni A vi A3 . Ni ngun 0... + 15V vi cht V cho mng mch A18

Thc tp K thut in t 1

B mn in t -Vin thng

1 mc phn cc thun cho diode D3 trong mng A1-1 nh hnh A1-1c1 .

2. Mc cc ng h o:
ng h o st th trn diode: Ni cc cht ng h o (V) ca mch A1-1 vi
ng h o th hin s DIGITAL VOLMETER ca thit b chnh ATS - 11 N. Khong
o t 20V.
ng h o dng qua diode: Ni cc cht ng h o (mA) ca mch A1-1 vi
ng h o th hin s DIGITAL mA METER ca thit b chnh T- 11 N. Khong o
t 20mA.
Ch : Cm ng phn cc ca ngun v ng h o.
3. Bt in ngun nui cho thit b ATS -11N. Chnh ngun c V= +12V. Vn bin
tr Pl cc i. Ghi gi tr ng chy qua diode IF v st th UF trn diode vo bng
A1.5.
4. Gim tng bc bin tr Pl. Ti mi bc ghi gi tr dng chy qua v st th trn
diode vo bng Al.5. Ch xc nh v tr ngng m ti dng qua diode c s
thay i t ngt.

1 ) Zener - Diode phn cc thun

2) Zener - Diode phn cc ngc

Hnh A1-1c : S th nghim vi Zener- Diode

Bng A1.5
IF
UF
b) Zenner - Diode phn cc ngc
1. Ni ngun 0...-15V vi cht V cho mng mch Al-l mc phn cc ngc cho
Diode D3 trong mng A1-1 nh hnh A1-1c2.
ng h o dng hin s DIGITAL mA METER ca thit b chnh ATS- 11 N.
Khong o t 20mA.
2. t th nui DC l -12V, vn bin tr Pl dng qua D3 ~ 5mA. Gim th nui
xung di -8V2, sau vn bin tr chnh ngun thay i theo tng bc -9V, -10V
9

Thc tp K thut in t 1

B mn in t -Vin thng

-11V, - 12V, - 13V, - 14V, - 15V. ng vi mi gi tr V, ghi dng chy qua IR v st

th UR trn D3 vo bng Al.6.
Bng A1.6
V

-8V2

-9V

-10V

-11V

-12V

-13V

-14V

-15V

UR
UR

3. Vi kt qu o c trn bng A1.5 v Al.6, v th biu din c trng Volt

Ampe ca Ge-Diode, I = f(V) trong dng I biu din trn trc y v st th V trn
trc x. Nhnh thun v gc phn t th I, nhnh ngc v gc phn t th 3.3.
4. T kt qu o c, tnh h s n p ca diode Zenner:

Nhn xt kt qu:
c im mc thun ngc ca Zenner-Diode.
c im c trng Volt-Ampe ca Zenner-Diode.
So snh cc c trng V-A gia Zenner v Si-Diode.
3.3.1.4. Diode pht quang (LED)
3.3.1.4.1 Nhim v
Sinh vin xc nh bng thc nghim cc ch ni LED ch trng thi in
t.
3.3.1.4.2. Nguyn l hot ng

C ch hot ng ca LED: Khi c in p thun t vo, hng ro th gim to

iu kin cho dng in chy qua. in t t min n c tng tc sang min p ti hp
vi l trng, phn nng lng d c gii phng di dng nh sng. Cng sng
ca LED t l vi dng in chy qua diode. Dng c vi mA th nhn r nh sng bc
x ca LED.
10

Thc tp K thut in t 1

B mn in t -Vin thng

Bin tr Pl iu chnh in p t vo hai u Diode. Khi bin tr t MIN

in p t vo 2 u LED l nh. Vn bin tr t Min-Max in p t vo hai u
LED tng dn v LED sng dn.
Vi nhng vt liu khc nhau th nh sng pht ra ca LED cng c mu sc
khc nhau. Do LED xanh, , vng, cam c mu sc khc nhau.
c trng Von-Ampe ca LED vng thun v vng ngc cng ging nh
Diode thng
3.3.1.4.3. Cc bc thc hin
1.Ni cht cp ngun V ca mng mch Al-l vi ngun iu chnh 0...+15V ca ATS 11 N . t th ngun cp + 12V .
2. Mc cc ng h o:
ng h o st th trn LED: Ni cc cht ng h o (V) ca mch A1-1 vi
ng h o th hin s DIGITAL VOLMETER ca thit b chnh ATS - 11N. Khong
o t 20V.
ng h o dng qua diode : Ni cc cht ng h o (mA) ca mch A1-1 vi
ng h o th hin s DIGITAL mA METER ca thit b chnh ATS-11 N. Khong
o t 20mA.
Ch : Cm ng phn cc ca ngun v ng h o.
3. Dng dy ni A vi A4 mc phn cc thun cho LED mu D4 (hnh Al-ld).
Bt in ngun nui cho thit b ATS-11N.

Hnh A1-1d: S th nghim vi LED

4. Vn bin tr Pl dng chy qua LED l 16mA. Ghi gi tr dng vo bng A1.7.
5. Gim th nui (vn bin tr ngun) cho n khi n LED tt hn, sau tng dn
th cho n khi LED sng. Ghi gi tr th v dng o c vo bng A1.7.
6. Thay LED bng LED xanh (D5), vng (D6), cam(D7), khi ni ln lt cht A
vi A5, A6, A7. Lp li cc bc 4-5.
Ghi gi tr dng in chy qua LED: I2, I3, I4, v st th trn LED tng ng V2
11

Thc tp K thut in t 1

B mn in t -Vin thng

V3, V4, vo bng A1.7 cho cc LED mu tng ng.

Bng A1.7
LED
Th nui +V
Dng qua LED-I1
St th trn LED -V1
LED xanh
Th nui +V
Dng qua LED -I2
St th trn LED -V2
LED vng
Th nui +V
Dng qua LED - I3
St th trn LED -V3
LED cam
Th nui +V
Dng qua LED - I4
St th trn LED - V4

im bt u sng

Sng trung bnh

Sng r

im bt u Sng

Sng trung bnh

Sng r

im bt u sng

Sng trung bnh

Sng r

im bt u sng

Sng trung bnh

Sng r

7. Cn c vo kt qu ghi trong cc bng, so snh dng v th s dng cho mi loi

LED.
3.3.2 B HN CH V DCH MC TN HIU DNG DIODE
S th nghim v dch mc v hn ch tn hiu c thc hin trn mng s
hnh A1 -2.

Hnh A1 -2 : S th nghim v dch mc v hn ch tn hiu

3.3.2.1. B hn ch tn hiu (Biased cliper)
3.3.2.1.1. Nhim v
Sinh vin tm hiu nguyn l mch hn ch bin tn hiu n gin dng diode.
3.3.2.1.2. Nguyn l hot ng

12

Thc tp K thut in t 1

B mn in t -Vin thng

Cp tn hiu vo ti u A
a) Hn ch phn dng tn hiu: Ni cht 1 vi cht U. Khi Uv> E, Diode thng, Ur
= E. Khi Uv<E, Diode khng thng, Ur : Uv. Ta c tn hiu b hn ch bin trn.

b) Hn ch phn m tn hiu: Ni cht 2 vi cht U. Khi Uv > E, Diode khng

thng, Ur = Uv. Khi Uv<E, Diode thng, Ur = E. Ta c bin tn hiu b hn ch
bin di. Dng tn hiu nh hnh v sau.

3.3.2.1.3. Cc bc thc hin

a) Hn ch phn dng ca tn hiu
1. Cp ngun DC iu chnh (0...+15V) t thit b chnh vi cht (V) ca mng
Al-2. Vn bin tr chnh ngun v 0. Ch cm ng phn cc ngun. Ni cht 1 vi
cht U (hnh A1 -2a) to s hn ch phn dng ca tn hiu.
2. t ch cho my pht tn hiu FUNCTION GENERATOR Ca thit b
chnh ATS- 11 N: Pht dng sin (cng tc FUNCTION v tr v hnh sin), tn s
1KHZ (cng tc khong RANGE v tr 1k v chnh b sung bin tr T1nh chnh
13

Thc tp K thut in t 1

B mn in t -Vin thng

FREQUENCY). Bin ra 5V t nh ti nh (chnh bin tr bin

AMPLITUDE). Ni tn hiu t my pht xung vi li vo IN(A) ca mch A1-2
(hnhA1 -2a)
3. t thang o th li vo ca dao ng k 1V/cm, thi gian qut 1ms/cm.
S dng cc nt chnh v tr ca dao ng k dch Tia theo chiu X,Y v v tr d
quan st. Ni knh 1 ca dao ng k vi im vo A. Ni knh 2 ca dao ng k vi
im ra C.
4. Bt in cho thit b chnh, tng dn th V theo cc gi tr V= 0,25V, 1V, 2V
v 4V. V dng tn hiu ra v o bin ca chng.
5. Trn c s c tnh dn dng ca diode khi phn cc thun, gii thch nguyn
tc hn ch bin tn hiu bng s diode.
b) Hn ch phn m ca tn hiu
1. Cp ngun DC iu chnh (0...-15V)/ATS- 11 N vi cht V ca mng Al-2.
Vn bin tr chnh ngun v 0. Ni cht 2 vi U (hnh A1 -2b) to s hn ch
phn m tn hiu.
2. Bt in cho thit b chnh. Tng dn th V theo cc gi tr V= -0,25V, -1V, 2V,- 4V. V dng tn hiu ra v o bin ca chng.

Hnh A1 -2b: B hn ch phn m tn hiu

3. Trn c s c tnh dn dng ca diode khi phn cc thun, gii thch nguyn
tc hn ch bin tn hiu bng s diode.
3.3.2.2. B dch mc tn hiu (Btased clamper)
3.3.2.2.1. Nhim v
Sinh vin tm hiu nguyn l mch dch mc tn hiu mt chiu dng diode khi
khng lm thay i dng tn hiu.
3.3.2.2.2 Nguyn l hot ng
14

Thc tp K thut in t 1

B mn in t -Vin thng

a tn hiu vo ti A v B.
a) Dch mc phn ng tn hiu: Ni cht U vi cht 2. Ta c mch tng
ng vi mch sau:

t in p U ln hai u diode, diode phn cc thun. in p ra Ur = Uv +|u|.

in p nng ln mt mc +u. Tn hiu ti u ra v u vo c dng nh sau:

b) Dch mc phn m tn hiu: Ni cht U vi cht 1. Mch in lng ng

vi hnh sau:

t in p -U ln hai u diode, diode phn cc thun. in p ra Ur =Uv -|u|.

in p ra h mt mc - u. Ta c dng tn hiu u vo v ra nh sau:

15

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.2.2.3. Cc bc thc hin

a) Dch mc phn dng tn hiu
1. Cp ngun DC iu chnh (0...+15V) t thit b chnh vi cht V ca mng Al-2.
Vn bin tr chnh ngun v 0. Ch cm ng phn cc ngun. Ni cht 2 vi cht
U (hnh A1 -2c) to s dch mc dng cho tn hiu.

Hnh Al-2c: B dch mc dng cho tn hiu

2. t ch cho my pht tn hiu FUNCTION GENERATOR ca thit b chnh
ATS-11N: Pht dng sin (cng tc FUNCTION v tr v hnh sin), tn s lKHz (cng
tc khong RANGE v tr 1k v chnh b sung bin tr T1nh chnh FREQUENCY).
Bin ra + 5V t nh ti nh (chnh bin tr bin AMPLITUDE). Ni tn hiu
t my pht xung vi li vo IN(A) ca mch Al-2 (hnhA1 -2c)
3. t thang o th li vo ca dao ng k 1V/cm, thi gian qut 1ms/cm. S
dng cc nt chnh v tr ca dao ng k dch Tia theo chiu X,Y v v tr d quan
st. Ni knh 1 ca dao ng k vi im vo A. Ni knh 2 ca dao ng k vi
im ra C.
Ch : o dch mc mt chiu th dao ng k phi t ch o l DC
4. Bt in cho thit b chnh, tng dn th V theo cc gi tr V= 0,25V, 1V, 2V v 4V.
V dng tn hiu ra v o bin ca chng. Xc nh v v gi tr ng c bn
(trung bnh ca tn hiu ra).
5. Trn c s c tnh dn dng ca diode khi phn cc thun, gii thch nguyn tc
dch mc tn hiu bng s diode.
b) Dch mc phn m ca tn hiu
1. Cp ngun DC iu chnh (0 ... - 15V)/ATS- 11 N vi cht V ca mng A1 -2. Vn
bin tr chnh ngun v 0. Ni cht 2 vi U (hnh Al-2d) to s hn ch phn m
tn hiu

Hnh Al-2b: B dch mc m cho tn hiu

16

Thc tp K thut in t 1

B mn in t -Vin thng

2. Bt in cho thit b chnh. Tng dn th V theo cc gi tr V= -0,25V, -1V, -2V,

-4V. V dng tn hiu ra v o bin ca chng. Xc nh v v gi tr ng c bn
(trung bnh) ca tn hiu ra.
3. Trn c s c tnh dn dng ca diode khi phn cc thun, gii thch nguyn tc
dch mc bin tn hiu bng s diode.
3.3.3. S CHNH LU V LC NGUN
Th nghim v chnh lu v b lc c thc hin trn mng s hnh A1 -3

Hnh A1 -3 S th nghim chnh lu v b lc ngun

3.3.3.1. S chnh lu mt na chu k
3.3.3.1.1 Nhim v
Sinh vin nghin cu v xc nh vai tr ca diode trong mch chnh lu mt na
chu k s dng trong cc b to ngun mt chiu v cc thit b khc.
3.3.3.1.2 Nguyn l hot ng

Khi Uv na chu k dng, UAK > 0, Diode Dl thng. in tr ni ca diode R

<< R1 nn th li ra UR c gi tr gn bng Uv. Na chu k m ca Uv th UAK'< 0 nn
Diode Dl cm. in tr ca diode R >>Rl nn U 0.
Dng tn hiu nh sau:

17

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.3.1.3. Cc bc thc hin

1. Dng dao ng k quan st tn hiu vo v ra. Ni knh 1 ca dao ng k vi
im vo A. Ni knh 2 ca dao ng k vi im ra OUT.
2. Cp ngun xoay chiu (AC) cho mng A1-3.
Ni cht T vi cht 1 (nh hnh Al-3a) kho st mch chnh lu trn D1 v
D2.Ni ngun xoay chiu 0V v ~ 9V ca thit b chnh ATS- 11 N vi cht A(D1)
v cht B ca s Al-3a. Bt in ngun cho thit b chnh.
3. S dng dao ng k quan st tn hiu ti cc im A v T. V dng sng tng ng
4. Ghi gi tr th nh cho mi dng sng, chu k tn hiu.

Hnh A1 -3 a: S th nghim chnh lu diode mt v hai na chu k

5. Gii thch s khc nhau cho dng sng ti A v T v s chnh lch th nh tng
ng
3.3.3.2. S chnh lu 2 na chu k
3.3.3.2.1. Nhim v .
Sinh vin nghin cu v xc nh vai tr ca diode trong mch chnh lu hai na
chu k s dng trong cc b to ngun mt chiu v cc thit b khc.
3.3.3.2.2. Nguyn l hot ng

Ni cht T vi cht 1. Cp tn hiu xoay chiu. Na chu k dng ca Uv, Dl

m, D2 cm. Dng in qua Dl qua Rl v UR ~ UV. Na chu k m ca Uv, diode Dl
cm, D2 thng. Dng in qua D2 qua Rl v UR ~ UV.
18

Thc tp K thut in t 1

B mn in t -Vin thng

Vy c hai chu k u c dng in qua Rl theo mt chiu khng i. Ta thy

trn hnh v UR mp m hn so vi chnh lu na chu k.

3.3.3.2.3. Cc bc thc hin

1. Cp ngun xoay chiu (AC) cho mng A1-3
Ni cht T vi cht 1 (s hnh Al-3a) kho st mch chnh lu trn D1 v
D2.
Ni ngun xoay chiu ~ 9V ~0V ~9V ca thit b chnh ATS-I l vi cht A(D1)
B(0VDC) - D2 ca s A1 -3a.
Bt in ngun cho thit b chnh.
2. S dng dao ng k quan st tn hiu ti cc im A, D2 v T. V li dng sng
tng ng.
3. Ghi gi tri th nh cho mi dng sng, chu k ca tn hiu.
4. Gii thch s khc nhau dng sng ti A, D2, T v s chnh 1c th nh tng ng.
5. Phn tch s khc nhau gia chnh lu mt na v hai na chu k.
3.3.3.3. S chnh lu cu
3.3.3.3.1. Nhim v
Sinh vin nghin cu v xc nh vai tr ca diode trong mch chnh lu hai na
chu k dng cu diode s dng trong cc b to ngun mt chiu v cc thit b
khc.
3.3.3.3.2. Nguyn l hot ng

19

Thc tp K thut in t 1

B mn in t -Vin thng

Trong tng na chu k ca Uvo, mt cp Diode c Anot dng nht v Katot m

nht m cho dng in 1 chiu qua R, cp Diode cn li ng v chu in p ngc
cc i bng bin Uvm
Gi s trong na chu k dng ca Uv, mt cp Diode D5, D4 m, cp D3, D6
ng, cho dng in qua R1. Na chu k m ca Uv, cp D3, D6 m, cp D5, D4
ng, dng qua R1 c chiu khng i.
u im ca s cu l in p ngc t vo cp diode ng ch bng na so
vi s chnh lu mt na v hai na chu k. Kt cu th cp bin p n gin. Tn
hiu vo v ra nh trn hnh v:

3.3.3.3.3. Cc bc thc hin

1. Cp ngun xoay chiu (AC) cho mng Al-3. Ni cht T vi cht 2 (s hnh A13b) kho st mch chnh lu cu trn D3 - D6. Ni ngun xoay chiu ~0V ~9V ca
thit b chnh ATS- 11 N vi cht C -D ca s A1 -3 . Bt in ngun cho thit b
chnh.

Hnh A1 -3b: S th nghim chnh lu cu diode

2. t thang o th li vo ca dao ng k 5V/cm. t thi gian qut ca dao ng
k 5ms/cm. Chnh cho Tia nm gia khong trn v phn di ca mn dao ng
k. S dng cc nt chnh v tr ca dao ng k dch Tia theo chiu X,Y v v tr
d quan st.
Ch : S c 2 im 0V li vo v t li ra khng ni chung nhau. V vy
nu s dng 2 knh o ca dao ng k quan st ng thi tn hiu vo v ra s ni
tt 2 im ny (lm on mch D4). Ch s dng mt knh ca dao ng k kim
tra ln lt im th vo (theo 0V li vo) sau - im th ra (t ra).
3. Dng dao ng k quan st tn hiu ti cc im C(D) v T. V dng sng tng
20

Thc tp K thut in t 1

B mn in t -Vin thng

ng
4. Ghi li gi tr th nh cho mi dng sng, chu k tn hiu.
5. Gii thch s khc nhau cho dng sng ti C(D), T v s chnh 1ch th nh tng
ng
6. So snh kt qu chnh lu 2 na chu k dng cu diode vi loi dng bin th c
im gia. (mc 3.3.2).
7. Cp ngun DC+ 12V t ngun chun ca thit b chnh cho cu diode qua cc im
CD (hnh A1 -3 ), trong C ni (+) cn D ni (-). o st th trn ti R1 .
8. o phn cc th. C ni (-) cn D ni (+). Nhn xt v xem th trn R1 c o cc
hay khng. Gii thch v sao?
3.3.3.4. B lc ngun
3.3.3.4.1. Nhim v
Sinh vin nghin cu v hiu nguyn l hot ng lc ngun dng t v b lc
dng
3.3.3.4.2. Nguyn l hot ng

Khi khng s dng mt lc RC th dng in p ra ging nh dng in p sau

chnh lu.
Khi s dng mt lc RC bng cch Ni cht ( 1 ) hoc cht (2) vi cht J1 . Do
thi gian phng np ca t C khc nhau (lc np t C c hng s thi gian nh, lc
phng c hng s thi gian ln) nn UR Phng hn, c dng ging in p mt chiu.
Nu chn t C cng ln th UR cng c dng phng hn.
Biu in p c dng nh sau:

3.3.3.4.3. Cc bc thc hin.

1. Cp ngun xoay chiu (AC) cho mng A1-3.
21

Thc tp K thut in t 1

B mn in t -Vin thng

Ni ngun xoay chiu ~9V ~0V ~9V ca thit b chnh ATS- 11 N vi cht A-BD2 ca s Al-3c.

Hnh Al-3c: S th nghim chnh lu diode v b lc ngun

2. t thang o th li vo ca dao ng k 5V/cm. t thi gian qut ca dao ng
k -5ms/cm. Chnh cho Tia nm gia khong trn v phn di ca mn dao ng
k. S dng cc nt chnh v tr ca dao ng k dch Tia theo chiu X,Y v v tr
d quan st
3. Tng bc ni cc cht J1-J4 nh trong bng A1-8. Ch k hiu 0 - khng
ni, 1 c ni. Bt in cho thit b chnh.
Bng Al-8.
Kiu
1

Ni ung
Khng ti ra
C ti 2K
C ti 1 K
B lc kiu n

J1
1
1
1
1

J2
1
1
1
1

J3 J4 Dng tn hiu ra
0 0
1 0
0 1
0 1

Bin rng ca

4. S dng dao ng k quan st tn hiu ti cc im 1 v li ra OUT cho b lc vi

chnh lu hai na chu k. V li dng sng v o bin th mt chiu v th rng
ca tng ng. Ghi kt qu vo bng Al-8.
5. Tho bt mt dy ni t ngun ~9V ca thit b chnh vo cht C ca Al-3 c s
chnh lu mt na chu k. Lp li cc bc 3-4. S dng dao ng k quan st tn
hiu ti cc im 2 v li ra OUT cho b lc vi chnh lu mt na chu k. V li
dng sng v o bin th mt chiu v th rng ca tng ng. Ghi kt qu vo
bng Al-9.
Bng Al-9.
Kiu

Ni dung

J1

J2

J3

J4

Khng ti ra
C ti 2K
C ti 1 K
B lc kiu n

1
1
1
1

1
1
1
1

0
1
0
0

0
0
1
1

3
4

22

Dng tn hiu ra

Bin rng

Thc tp K thut in t 1

B mn in t -Vin thng

6. Nhn xt v nh hng ti ln mp m ca b lc th cho trng hp chnh lu

mt v hai na chu k.
7. So snh cht lng lc ngun cho hai trng hp kho st.
3.3.4. B HNH THNH TN HIU
Th nghim v b hnh thnh xung n gin vi mch vi phn CR v tch phn
RC c thc hin trn mng s hnh Al-4.

Hnh A1 -4. S th nghim v hnh thnh xung

3.3.4.1. Nhim v
Sinh vin tm hiu nguyn l vi phn, tch phn, ct xung (s dng diode) hnh
thnh tn hiu.
3.3.4.2. Nguyn l hot ng
a) Mch vi phn

S mc nh hnh trn nu tha mn RC<<1 th in p ra bng vi phn in p

vo

Mch trn gi l mch vi phn.

Biu in p c dng nh sau:

23

Thc tp K thut in t 1

B mn in t -Vin thng

Nh vy, nu tha mn iu kin ca mch vi phn th mch RC s i tn hiu

t xung vung n cc ra hai xung nhn lng cc.
b) Mch tch phn

Mch trn nu tha mn RC>>1 th Ura = tch phn Uvo.

Ta gi l mch tch phn. Dng tn hiu vo v ra nh sau:

c) Mch ct xung
Khi ta mc ni Tip Diode v in tr th tn hiu qua c dng xung b ct.
cng chnh l mch chnh lu mt na chu k. S nh hnh v di y:

Dng tn hiu nh hnh v sau:

3.3.4.3. Cc bc thc hin

3.3.4.3.1 S vi phn
24

Thc tp K thut in t 1

B mn in t -Vin thng

1. t ch cho my pht tn hiu FUNCTION GENERATOR Ca thit b

chnh ATS-11N: Pht dng vung gc (cng tc FUNCTION v tr v hnh vung
gc), tn s 1KHz (cng tc khong RANGE v tr l v chnh b sung bin tr T1nh
chnh FREQUENCY). Bin ra 5V (chnh bin tr bin AMPLITUDE).
Ni tn hiu t my pht xung FUNCTION GENERATOR/ATS- 11N vi li vo
IN(A) Ca mch A1 -4 (hnh A1 -4a).

Hnh Al-4a: S th nghim v mch vi phn

2. Dng dao ng k quan st tn hiu. Ni knh 1 ca dao ng k vi im
vo A.
Ni knh 2 ca dao ng k vi im ra OUT.
3. Tng bc gt cc cng tc ca DSW1 v DSW2 nh trong bng Al-10. Ti
mi bc, quan st tn hiu, v li dng sng, o bin tng ng ti A v C. Ghi kt
qu vo bng A1-10 .
Ch : Cc cng tc khng c trong bng OFF. K hiu 1 l c ni, 0 l khng
c ni.
Bng Al-10

Kiu
1
3
4
5
6
7

1
0
0
0
0
0

0
1
0
0
0
0

0
0
1
1
1
1

1
1
1
0
0
0

0
0
0
1
0
0

0
0
0
0
1
1

0
0
0
0
0
1

Dng v bin Hng s thi gian

5 tn hiu T=R.C Tx
K
(o)
0
0
0
0
0
0

DSW 1
Ni dung 1
Vi phn 1
Vi phn 2
Vi phn 3
Vi phn 4
Vi phn 5
Vi phn 5
c ct xung
Vi phn 5
c ct xung

DSW2
1 2

4. Theo kt qu thu c, tm mi lin h gia hng s thi gian tnh theo tch s R.C
25

Thc tp K thut in t 1

B mn in t -Vin thng

cho mi mch vi gi tr t o c.
Tnh gi tr k cho mi kiu vi phn: k = tx(o)/R.C. Ghi kt qu vo bng Al-10.
Tnh gi tr trung bnh ca k =
5. Gii thch vai tr ca cc linh kin trong s .
3.3.4.3.2. S tch phn
1. Gi nguyn cu hnh ni nh phn trn.
2. Tng bc gt cc cng tc ca DSW1 v DSW2 nh trong bng A1-11. Ti mi
bc, quan st tn hiu, v li dng sng, o bin tng ng ti A v C. Ghi kt qu
vo bng A1-11.
3. Theo kt qu thu c, tm mi lin h gia hng s thi gian tnh theo tch s R.C
cho mi mch vi gi tr t o c.
Tnh gi tr k cho mi kiu tch phn: k = tx(o)fr.C. Ghi kt qu vo bng Ai-ll.
Tnh gi tr trung bnh ca k =
4. Gii thch vai tr ca cc yu t trong s .
Bng A1-11
DSW2

Dng v Hng s thi gian

DSW 1

Kiu

Ni dung

Tch phn 1
Tch phn 2
Tch phn 3
Tch phn 4
Tch phn 5
Tch phn 5
c ct xung

1
1
1
0
0

0
0
0
1
0

0
0
0
0
1

0
0
0
0
0

0
0
0
0
0

1
0
0
0
0

0
1
0
0
0

0
0
1
1
1

3
5
6
7

Tch phn 5
c ct xung

26

bin T= R.C T
x
tn hiu
(o)

Thc tp K thut in t 1

B mn in t -Vin thng

Bi 2. S KHUCH I TRANZITOR

1. MC CH
Kho st c trng ca transistor NPN v PNP trong ch lm vic mt chiu.
Kho st c tnh cng tc ca transistor trong cc ch khuych i mc kiu
Emitter chung, Collector chung v Base chung.
2. C S L THUYT
thc hnh tt c bi th nghim yu cu sinh vin cn nm r mt s im
sau:
9 Cu to nguyn l lm vic ca transistor lng cc NPN v PNP.
9 Cch tnh h s khuych i ca trasistor.
9 Cc s mc EC, CC, BC v c im ca cc kiu mc .
9 V v gii thch ng ti tnh khi transistor lm vic ch mt chiu.
9 Nguyn l lm vic ca transistor ch xoay chiu.
9 nh hng ca hi Tip trong cc tng khuych i.
9 Cch c gi tr v thng s ca tr, bin tr, t.
9 Cch xc nh loi transistor v cc chn B, C, E ca transistor.
3. CC BC THC HIN
3.1. THIT B S DNG
Thit b chnh chun b cho thc tp tng t ATS - 11N
1. Khi th nghim AE - 102 N cho bi thc tp v Tranzito (Gn ln thit b
chnh ATS - 11 N).
2. Dao ng k hai Tia.
3. Ph tng: Dy cm.
4. ng h vn nng hin th s
3.2. CP NGUN V DY NI
Khi AE - 102N cha 4 mng s A2-l...4, vi cc cht cp ngun ring. Khi
s dng mng no cn ni dy cp ngun. cho mng . t (GND) ca cc mng s
c ni sn vi nhau, do ch cn ni t chung cho ton khi AE - l02N.
1. B ngun chun DC POWER SUPPLY ca thit b ATS- 11 N cung cp cc
th chun 5V, 12V c nh.
27

Thc tp K thut in t 1

B mn in t -Vin thng

2. B ngun iu chnh DC ADJUST POWER SUPPLY ca thit b ATS- 11N

cung cp cc gi tr in th mt chiu 0...+15V v 0...-15V. Khi vn cc bin tr
chnh ngun, cho php nh gi tr th cn thit. S dng ng h o th DC trn thit
b chnh hoc dng ng h s xc nh in th t.
3. Khi thc tp, cn ni y t cc cht cp ngun ca ATS-11N ti trc Tip
cho mng s cn kho st.
Ch : Cm ng phn cc ca ngun v ca ng h o.
3.3. CC BI THC TP
3.3.1. KHUCH I MT CHIU TRANZITOR NI KIU E CHUNG
3.3.1.1. S vi tranzitor NPN
3.3.1.1.1. Nhim v
Sinh vin hiu c nguyn tc khuych i ca Tranzito NPN, s mc kiu
Emit chung v o h s khuych i dng ca Tranzitor.
3.3.1.1.2. Nguyn l hot ng

Hnh A2 -la: S khuych i DC trn Tranzitor NPN, ni kiu Emitor chung

Mch phn p cho cc B ca transistor gm c R1, R2 v bin tr Pl. T C dng
lc mt chiu u vo. Mch ti gm c R3 v bin tr P2.
Bin tr Pl thay i in p vo u B ca transistor. Bin tr P2 chnh
in p ri trn cc C ca transistor.
iu chnh Pl dn n thay i dng IB. ch lm vic ca transistor thay i
B

theo.
H s khuych i dng Ki = IC/IB ~
B khuych i Emitter chung l b khuych i o pha.
3.3.1.1.3 Cc bc thc hin
1. Cp ngun + 12V cho mch A2 - 1a
28

Thc tp K thut in t 1

B mn in t -Vin thng

2. Mc ng h o:
o st th trn Tranzitor: Ni cc cht o (V) ca mch A2- 1a (vi Tranzitor
PNP ni cc cht o (V) ca mch A2 -lb)vi ng h o th hin s DIGITAL
VOLTEMER ca thit b chnh ATS-11N. Khong o t 20 V.
ng h o dng colector ca Tranzitor: t cc cng tc ca b o hin s
DIGITAL V-AMETER ca thit b chnh ATS -11 N ch o dng (A) v khong
o 20mA. Ni cc cht o ng h o(mA) ca mch A2 - la vi cht b o
ng h o dng Base ca Tranzitor: Ni cc cht ng h o (A) ca mch
A2- la vi ng h o dng hin s DIGITAL mA METER ca thit b chnh ATS 11N. Khong o t 2mA.
3. Bt ngun in nui cho thit b chnh ATS - 11N. Vn bin tr Pl dng qua
colector Tranzitor 2mA.
4. Vn bin tr P2110K st th trn colector trong khong Tranzitor t 4- 6V.
5. o dng base, ghi kt qu vo bng A2 -1. Thay i gi tr in tr Pl thay i
dng base T1 (Tng thm 10A). Ghi gi tr dng base v dng collector ca Tranzitor
vo bng A2 - 1 .
Bng A2 -1
Kiu

Dng Ib (chnh P1)

Th Vc (chnh P2)

Dng Ic

Ib1= .. A

4 -6 V

Ic1= ..mA

Ib2= .. A

4 -6 V

Ic2=..mA

6. Tnh h s khuych i dng DC = hfe=(Ic2 - Icl)/(Ib2 - Ibl)

3.3.1.2. S vi tranzitor PNP
3.3.1.2.1. Nhim v
Sinh vin hiu c nguyn tc khuych i ca transistor PNP, s mc kiu
emitter chung v o h s khuych i dng ca transistor.
3.3.1.2.2. Nguyn tc hot ng
Hot ng ca mch tng t s khuych i EC vi transistor NPN.
Ch : Chiu dng in IB, IC, IE ngc vi chiu ca cc dng khi ta mc
transistor NPN.
3.3.1.2.3. Cc bc thc hin
1. Cp ngun -12V cho mch A2 - 1b
29

Thc tp K thut in t 1

B mn in t -Vin thng

2. Mc ng h o:
o st th trn Tranzitor: Ni cc cht o (V) ca mch A2 -1b vi ng h o
th hin s DIGITAL VOLTEMER ca thit b chnh ATS - 11N. Khong o t
20V.
ng h o dng colector ca Tranzitor: t cc cng tc ca b o hin s
DIGITAL V-AMETER ca thit b chnh ATS - 11 N ch o dng (A) v khong
o 20mA. Ni cc cht o ng h o(mA) ca mch A2 - lb vi cht b o

Hnh A2 -1b: S khuych i DC trn Tranzitor PNP, ni kiu Emitor chung

ng h o dng Base ca Tranzitor: Ni cc cht ng h o(A) ca mch A2- 1b
vi ng h o dng hin s DIGITAL mA METER ca thit b chnh ATS - 11N.
Khong o t 2mA.
3. Bt ngun in nui cho thit b chnh ATS - 11N. Vn bin tr P1 dng qua
colector Tranzitor 2mA.4. Vn bin tr P2/10K st th trn colector trong khong
Tranzitor t 4- 6V.
4. o dng base, ghi kt qu vo bng A2 -2. Thay i gi tr in tr Pl thay i
dng base T1 (Tng thm 10A). Ghi gi tr dng base v dng collector ca Tranzitor
vo bng A2 -2.
Bng A2 -2
Kiu

Dng Ib (chnh Pl )

Th Vc (chnh P2)

Dng Ic

Ibl= . A

4-6V

Icl= . mA

Ib2=..A

4-6V

Ic2=.mA

5. Tnh h s khuych i dng DC

= hfe=(Ic2 - Icl)/(Ib2 - Ibl) = .
3.3.2. KHUYCH I XOAY CHIU TRANZITOR KIU E CHUNG
3.3.2.1 Nhim v
30

Thc tp K thut in t 1

B mn in t -Vin thng

Sinh vin hiu c nguyn tc khuych i xoay chiu ca Tranzitor, s mc

kiu Emit chung.
3.3.2.2. Nguyn l hot ng

Hnh A2-2: S khuych i AC trn transistor ni kiu emitter chung

T C1 l t ghp u vo. T Cl cho tn hiu xoay chiu i qua ng thi ngn
nh hng mt chiu gia cc tng. Tng t, t C3 l t ghp sang tng sau. Cc in
tr (t Rl-R6) xc nh ch lm vic tnh ca tng. R7 l ti a in p ra.
Khi a in p xoay chiu ti u vo, xut hin dng xoay chiu in ca
transistor v do xut hin dng xoay chiu iC mch ra ca tng. St p trn cc
in tr R5 (R6) to nn in p xoay chiu trn collector. in p ny qua t C3 a
n u ra ca tng ti mch ti.
Ch : Vi s mc EC, tn hiu u ra ngc pha vi tn hiu u vo. Vic
tng in p vo s lm tng dng base v dng collector ca transistor. St p trn Rc
tng s lm gim in p trn collector.
3.3.2.3. Cc bi thc tp
3.3.2.3.1. Ch xoay chiu
1. Cp ngun +12V cho mch hnh A2 -2
2. t ch cho my phtranzitor tn hiu FUNT1ON GENERATOR ca thit b
ATS- 11 N :
Pht dng sin (Cng tc FUNT1ON GENERATOR vi tr v hnh sin), tn s
lkHz (cng tc khong RANGE v tr l v chnh b sung bin tr chnh T1nh
FREQUENC)
Bin ra 50V(chnh bin tr bin AMPLITUDE).
3. t thang o th li vo ca dao ng k knh 1 50mV/cmm v knh 2 2V/cm.
t thi gian qut ca dao ng k 1ms/cm. S dng cc nt chnh v tr ca dao
ng k dch Tia theo chiu X,Y v v tr d quan st.
31

Thc tp K thut in t 1

B mn in t -Vin thng

Ni knh 1 ca ao ng k vi im th IN/A. Ni knh 2 ca dao ng k vi

im ra OUT/C.

Hnh A2-2: S khuych i AC trn transistor ni kiu emitter chung

4. Ni tn hiu t my pht xung FUNCTION GENERATORIATS- 11 N vi li vo
IN(A) ca mch A2-2.
5. Ni cc cht theo bng A2-3. Ni J3 v khng ni J7. ng vi mi cu hnh ni, v
dng xung v o bin , mt tng ca xung ra. Ch J = 1 biu th c ni, J=0 khng
ni. Ghi kt qu vo bng A2-3.
Bng A2-3.
Kiu

Trng
thi

Jl

J2

J4

J5

J6

J8

J9

1
1
1
1
1

K=kl
K=kl
K=kl
K=kl
C ti ra

1
0
0
0
0

0
1
1
1
1

0
0
0
0
0

1
1
0
0
0

0
0
1
1
1

0
0
0
1
1

0
0
0
0
1

Bin
Ura

Mt tng
ca Ura

6. Tnh h s khuych i th K = Ura/Uvo cho mi bc v ghi vo bng A2-3.

7. Gii thch nguyn nhn lm thay i h s khuych i cho mi kiu ni trong bng
A2-3.
3.3.2.3.2. o cc c trng tn s ca b khuch i
1. S dng my pht xung ngoi c tn s xung sin cc i ~ 10MHz, t bin
xung ra ~50mv. Ni li ra my pht vi li vo INIA s hnh A2-2.
2. S hnh A2-2 ni theo kiu 1 ca bng A2-3.
3. Thay i tn s xung vo theo bng A2-4, o bin xung ra ng vi mi tn
s. Ghi kt qu vo bng A2-4.
32

Thc tp K thut in t 1

B mn in t -Vin thng
Bng A2-4

100Hz

1KHz 100KHz

1MHz

2MHz

5MHz

7MHz

10Mhz

Uvao
Ura
K=Ura/Uvo

4. Biu din th s ph thuc h s khuych i K (trc y) vo tn s f (trc x)

3.3.3. KHUYCH I XOAY CHIU (AC) TRANSISTOR VI MCH PHN
HI M CHO TNG KHUYCH I EMITTER CHUNG
3.3.3.1. Nhim v
Sinh vin hiu c nguyn tc khuych i c phn hi m ca transistor trong
s mc kiu emiuer chung.
3.3.3.2. Nguyn l hot ng

Ni J7 lm mt hi Tip m trn R4, ni J8 s lm gim hi Tip m ca thnh

phn xoay chiu.
Hi Tip m lm m rng di thng: V vng tn s thp v tn s cao h s
khuych i gim dn n Ura gim lm Uht gim lm Ura tng ngha l n chng li s
gim ca h s khuych i do n m rng c di thng.
Hi Tip m lm gim tn hiu trn u vo b khuych i v lm gim h s
khuych i hi Tip do lm tng n nh ca b khuych i. Hi Tip m lm
tng tr khng vo v lm gim tr khng ra.
3.3.3.3. Cc bc thc hin
1. S dng s hnh A2-2:
2. t my pht tn hiu FUNT1ON GENERATOR ca thit b ATS - 11 N
33

Thc tp K thut in t 1

B mn in t -Vin thng

ch : Pht vung gc (Cng tc FUNT1QN GENERATOR v tr v hnh vung

gc), tn s 1kHz (cng tc khong RANGE v tr l v chnh b sung bin tr chnh
T1nh FREQUENCY). Bin ra 50mV(chnh bin tr bin AMPLITUDE).
3. Dng dao ng k quan st tn hiu. Ni knh 1 ca dao ng k vi im
th IN/A. Ni knh 2 ca dao ng k vi im ra OUT1C.
4. nh hng phn hi m ln h s khuych i
Ni J5. Cc cht J3, J6 khng ni. Cc cht cn li ni theo bng A2-5 cho s
hnh A2-2. ng vi mi bc ni, v dng xung v o bin xung vo v xung ra
(Ch J=l biu th c ni; J=0 - khng ni).
Bng A2-5
Kiu

Trng thi

Khng c phn
hi m
C phn hi
m 1
C phn hi
m 2
C phn hi
m 1 +2

2
3
4

J1 J2

J4

J7

Bin
Uvao

Bin
Uvao

Mt tng t
ca Ura

Tnh h s khuych i K = Ura/Uvo cho mi bc. Ghi kt qu vo bng A2-5:

T gi tr o trong bng A2-5, hy kt lun v nh hng mch phn hi m ln h s
khuych i.
5. nh hng phn hi m ln c trng tn s:
Ni nh kiu 1 trong bng A2-5.
S dng my pht xung ngoi c tn s xung sin cc i ~10MHz, t bin
xung ra ~50mV. Ni li ra my pht vi li vo IN/A s hnh A2-2.
Bng A2-6
F

1000Hz 1KHz 100KHZ 1MHZ 2MHZ 5MHZ 10MHZ 20MHZ

Uvo,Khi ni
J 1 , J5 , J7

34

Thc tp K thut in t 1

B mn in t -Vin thng

Ura khi ni J1,

J5, J7
K= Ura/Uvo
Uvo, Khi ni
J2, J4, J5
Ura, khi ni J2,
J4, J5
K=Ura/Uvo

Thay i tn s xung vo theo bng A2-6, o bin xung ra ng vi mi tn s

cho kiu khng phn hi (ni J3, J5, J7) v c phn hi (ni J3,J8).
Ghi kt qu vo bng A2-6.
Biu din kt qu s ph thuc h s khuych i vo tn s cho hai trng hp
c phn hi m v khng c phn hi m.
6. nh hng phn hi m ln tng tr vo:
Ni s hnh A2-2 nh kiu 1 trong bng A2-5 (khng c phn hi m - Ni
J5, J1, J7). My pht ca ATS-11N ch pht xung dng sin, tn s 1KHz, bin
200mV.
o bin xung ra my pht Uf(0) khi cha ni my pht vo im IN(A) ca s
A2-5. Ghi kt qu vo bng A2-7.
Cm cht my pht vo im A, cp tn hiu cho s A2-2B. o bin xung
vo Ufv(1) Ghi kt qu vo bng A2-7.
Ni h nh kiu 4 trong bng A2-5 cho trng hp c phn hi m (Ni J2, J4,
J5, J8). My pht ca ATS- 11 N ch pht xung dng sin, tn s 1KHz, bin
200mV. o bin xung ra my pht Uf(0) khi cha ni my pht vo im IN(A)
ca s A2-2B. Ghi kt qu vo bng A2-7.
Cm cht my pht vo im A, cp tn hiu cho s hnh A2-2B. o bin
xung vo Ufv(1). Ghi kt qu vo bng A2-7.
T gi tr o, tnh in tr vo Ri cho hai trng hp, vi in tr ni my pht
Rf-500 .

35

Thc tp K thut in t 1

B mn in t -Vin thng
Bng A2-7
Uf1

Trng thi

J1

J2

J4

J5

J7

J8 Uf0

Khng c phn
hi m

200mV

C phn hi m

200mV

Uv(l)
Uvf(l)

Kt lun v vai tr ca mch phn hi m i vi mt s c trng ca s

khuch i emitter chung.
3.3.4. S COLLECTOR CHUNG - TNG LP LI EMITTER
3.3.4.1. Nhim v
Sinh vin tm hiu nguyn tc lp li emitter v s Darlington
3.3.4.2. Nguyn l hot ng

Ch lm vic mt chiu: Bin tr 20K thay i ip p vo cc B ca

transistor. Khi UBE ln transistor m. Khi UCE ~ 0V, ta tnh c dng IE. H
s khuych i = IC/IB ~ = IE/IB.
Khi lm vic ch xoay chiu: Vic khuych i tn hiu 1 chiu hay xoay
chiu ch khc nhau ch tn hiu xoay chiu c truyn qua t cn tn hiu mt
chiu khng c truyn qua t m c truyn trc Tip.
in p ly ra u E ca transistor. V tr s Ura ~ Uvao (Ura = Uvo + UBE ~
Uvo) v trng pha vi in p vo.
Tng CC dng phi hp tr khng gia li ra b khuych i vi ti c in
tr nh, c vai tr nh mt tng khuych i cng sut.
Vi s mc Darlington, u ra s c cng sut ln.

36

Thc tp K thut in t 1

B mn in t -Vin thng

Khi cp transistor T1, T2 tng ng vi transistor mi. Chc nng ca

mch do transistor T1 quyt nh cn transistor T2 c tc dng khuych i dng ra.
H s khuych i dng in l: = 1 * 2.
3.3.4.3. Cc bc thc hin
3.3.4.3.1. o h s khuych i dng
1 . Cp ngun + 12V cho s hnh A2-3 a,b.
2. Mc cc ng h o
ng h o dng base ca transistor: Ni cc cht ng h o (mA) mch A2-3
vi ng h o dng DIGITAL mA METER ca thit b chnh ATS- 11 N. Khong o
t 2mA.
ng h o dng emitter ca transistor: t cc cng tc ca b o hin s
DIGITAL V-A METER ca thit b chnh ATS- 11 N ch dng RA) v khong
o 20mA. Ni cc cht ng h o (mA) ca mch A2-3a vi cht El v R5 to
mch emitter cho T1 .
Ch : Cm ng phn cc ca ngun v ng h o.

Hnh A2-3a: S collector chung - Tng lp li emitter trn transistor

3. Bt in ngun nui cho thit b chnh ATS-11N. Vn bin tr P1 dng qua
base transistor T1~20 A.
4. Thay i gi tr in tr P1 , do lm thay i dng base transistor T1 theo
cc ln o cho trong bng A2-8. Ghi gi tr dng chy qua emitter cu transistor vo
bng A2-8.
5. Tnh h s khuych i dng DC K(I) = (Ie2- Iel)/(Ib2-Ibl)
Bng A2-8

Dng Ib/T1 (chnh Pl)

Ib1 = 20A

Dng Ic/T1
Iel= ..mA

Ib2= 50A

Ie2 = mA
37

Thc tp K thut in t 1

B mn in t -Vin thng

Tng lp li Darlington:

Hnh A2-3b: S Darlington

1. ng h o dng emitter ca transistor: t cc cng tc ca b o hin s
DIGITAL V-A METER ca thit b chnh ATS-11N ch o dng (A) v khong
o 200mA. Ni cc cht ng h o (mA) ca mch A2-3 vi cht E2 v R5 ni
mch emitter cho T2.
2. S dng dy c cht cm ni mch hnh A2-3 thnh s Darlington Ni cht
El vi B2.
3. Bt in ngun nui cho thit b chnh ATS-I 1N. Vn bin tr Pl dng qua base
transistor ~ 10A.
4. Thay i gi tr in tr Pl , lm thay i dng base transistor T1 , v do T2, theo
cc kiu cho trong bng A2-9. Ghi gi tr dng chy qua emitter ca transistor T2 vo
bng A2-9.
Bng A2-9
Dng Ib/T1(chnh P1 )

Dng Ic/T1

Ibl= 10A1

Iel= mA

Ib2= 20A

Ie2=.mA

5. Tnh h s khuych i dng DC cho ton b s Darlington

K(I) = (Ie2 -Iel)/(Ib2 - Ibl) =
6. So snh h s khuych i dng cho s lp li thng thng v s Darlington
3.3.4.2. Tng lp lm vic ch xoay chiu (AC)
1. S dng mng s A2-3.
2. t my pht tn hiu FUNCTION GENERATOR ca thit b chnh ATS-11N
ch :
38

Thc tp K thut in t 1

B mn in t -Vin thng

Pht vung gc (Cng tc FUNT1ON GENERATOR v tr v hnh vung gc),

tn s 1kHz (cng tc khong RANGE v tr 1k v chnh b sung bin tr chnh
T1nh FREQUENCY).
Bin ra 2V(chnh bin tr bin AMPLITDE).
3. Ni li vo IN mch A2-3 vi li ra my pht tn hiu.
4 . Dng dao ng k quan st tn hiu. Ni knh 1 dao ng k vi im th vo
IN, Ni knh 2 ca dao ng k vi im th ra C.
5. Ni cc cht El vi R4, R5, R6. o thng s xung ra. Tnh h s khuych i th
Kl = Ura/Uvo cho tng lp li n. Ghi kt qu vo bng A2-10.
Bng A2-10
U(in)/base T1

U(out)/emitter T1

K1

E1xR4
E1xR5
E1xR6
6. Ni cc cht El vi B2. Ni E2 vi R4, R5, R6. o thng s xung ra. Tnh h s
khuych i th K2 = Ura/Uvo cho tng lp li Darlington. Ghi kt qu vo bng A211
Bng A2-l1
U(in)/base T1

U(out)/emitter T2

K2

E1xR4
E1xR5
E1XR6
7. Trn c s o h s khuych i dng (mc 3.3.1) v h s khuych i th (mc
3.3.3), a ra kt lun v vai tr khuych i ca tng lp li emitter. So snh kt qu
o gia tng lp li n v tng lp li Darlington.
3.3.5. KHUCH I TRANZITOR KIU BASE CHUNG
3.3.5.1. Nhim v
Sinh vin hiu c nguyn tc khuych i ca transistor trong s mc kiu
base chung.
3.3.5.2. Nguyn l hot ng

39

Thc tp K thut in t 1

B mn in t -Vin thng

y l s tng khuych i mc kiu Base chung, dng khuych i tn

hiu xoay chiu, nhng khuych i tn hiu mt chiu ch cn ni tt cc t ni
tng Cl in tr R1 , R2 v bin tr P1 xc nh dng Tnh IE cho transistor.
iu chnh bin tr Pl lm thay i dng vo IE. Dng ra IC cng thay i theo
dn n in p UC thay i. H s khuych i dng in Ki ~ 1 .
S mc BC thng dng cho cc mch khuych i lm vic tn s cao (v
in dung vo nh).
3.3.5.3. Cc bc thc hin
1. Cp ngun + 12V cho mng s hnh A2-4

Hnh A2-4: S khuych i base chung

2. Mc cc ng h o:
ng h o st th trn transistor: Ni cc cht ng h o (V) ca mch A2-4
vi ng h th hin s DIGITAL VOLMETER ca thit b chnh ATS-11N. Khong
o t 20V.
ng h o dng collector ca transistor: t cc cng tc ca b o hin s
DIGITAL V-A METER ca thit b chnh ATS- 1 l ch dng (A) v khong o
20mA. Ni cc cht ng h o (mA) ca mch A2-4 vi cht vo b o.
ng h o dng emitter ca transistor: Ni cc cht ng h o (mA) mch A24 vi ng h o dng hin s DIGITAL mA METER ca thit b chnh ATS- 11N.
40

Thc tp K thut in t 1

B mn in t -Vin thng

Ch : Cm ng phn cc ca ngun v ng h o khong o t 20mA

3. o h s truyn dng
Vn bin tr P1 (hnh A2-4) dng emitter - Ie ng vi cc gi tr trong bng
A2- 10 Ghi gi tr dng collector- Ic vo bng A2-10.
Bng A2- 1 0
1

Dng Ie/T1 (chnh P1)

Iel = 1mA

Dng Ic/T1
Icl= ..mA

Ie2= 2mA

Ic2= ..mA

4. Tnh h s truyn = (Ic2- Icl)/(Ie2 -Iel) =..

5. t my pht tn hiu FUNCTION GENERATOR ca thit b chnh ATS-11N
ch :
Pht vung gc (Cng tc FUNTION GBNERATOR v tr v hnh vung gc).
Tn s lkHz (cng tc khong RANGE v tr 1k v chnh b sung bin tr chnh
Tnh FREQUENCY).
Bin ra 50mv (chnh bin tr bin AMPLITUDE).
6. Bt in ngun nui cho thit b chnh ATS -11N. Vn bin tr P1 dng qua base
transistor ~20A.
7. Vn bin tr P2 c st th trn collector T1 l 6V v dng collector l 2mA. o
dng qua collector transistor.
8. Ni li vo IN(A) mch A2-4 vi li ra my pht tn hiu.
9. Dng dao ng k quan st tn hiu. Ni knh 1 ca dao ng k vi im th
vo A/D. Ni knh 2 dao ng k vi im th ra C/D.
10. o bin xung vo v ra. Tnh h s khuych i th = Ura/Uvo.
11. Ni J6, o bin xung ra. Tnh t s bin xung ra khi c ti (Ura c ni J6) v
khi khng c ti (Ura khng ni J6).
12. So snh s mt mt bin xung khi ni cht ti cho 3 b khuych i emitter
chung, collector chung v base chung. Kt lun s b v kh nng ng dng ca mi
loi

41

Thc tp K thut in t 1

B mn in t -Vin thng

Bi 3. KHUCH I NI TNG DNG TRANZITOR

1. MC CH CHUNG
Tm hiu nguyn tc xy dng b khuych i nhiu tng trn transistor. H s
khuych i ca b khuych i ni tng.
Tm hiu nguyn tc hot ng v h s khuych i ca b khuych i vi sai v
khuych i thut ton.
2. C S L THUYT
thc hnh tt c bi th nghim yu cu sinh vin cn nm r mt s im
sau:

Cch tnh h s khuych i ca mt tng v nhiu tng.

Tc dng n nh dng anh, b nhit trong mch khuych i vi sai. Tnh

c s khuych i ca b khuych i vi sai.

Hiu nguyn l mch khuych i thut ton..

Xc nh c cch mc transistor theo kiu CC, BC, EC v cc ch cng

tc A, B.

3. CC BI TH NGHIM
3.1. THIT B S DNG

Thit b chnh cho thc tp in t tng t ATS- 11 N

Khi th nghim AE-103N cho bi thc tp v Tranzitor (Gn ln thit b

chnh AT - 11 N).

Dao ng k 2 tia

Ph tng dy cm

3.2. CP NGUN V DY NI
Khi AE - 103 cha 6 mng s A3-1...6, vi cc cht cp ngun ring. khi s
ng mng no cn ni dy cp ngun cho mng s . t (GND) ca cc mng
s c ni sn vi nhau, do ch cn ni t chung cho ton khi AE - l03N.
1. B ngun chun DC POWER SUPPLY ca thit b ATS - 11 N cung cp cc th
chun 5 V, 12V c nh.
2. B ngun iu chnh DC ADJUST POWER SUPPLY ca thit b ATS- 11 N cung
cp cc gi tr in th mt chiu 0...+15V v 0...-15V. Khi vn cc bin tr chnh
42

Thc tp K thut in t 1

B mn in t -Vin thng

ngun, cho php nh gi tr in th cn thit. S dng ng h o th DC trn thit

b chnh xc nh in th t.
3. Khi thc tp, cn ni dy t cc cht cp ngun ca ATS - 11 N ti trc tip cho
mng s cn kho st.
Ch : Cm ng phn cc ca ngun v ng h o.
3.3. CC BI THC TP
3.3.1 KHUCH I NI TNG
Th nghim v b khuych i ni tng c thc hin trn mng s hnh A3-l

Hnh A3-l B khuych i ni tng bng mch CR.

3.3.1.1. Nhim v
Tm hiu nguyn tc xy dng b khuych i nhiu tng trn Tranzitor.
Tm hiu nguyn nhn gim h s khuych i khi ghp tng v phng php
lm gim s mt mt .
3.3.1.2. Nguyn l hot ng
Trong hnh A3- 1 l s khuch i ni tng. Ta c th ni 2 hay 3 tng tu
theo vic u ni cc u ni. Khi ta ni A vi E ta c b khuch i hai tng. Cn
khi ni A vi E, F vi B ta c b khuch i 3 tng.
V d: Phn tch hot ng ca b khuch i 3 tng (ni A vi E, F vi B)
T Cl, C3, C4, C6 l cc t ni tng
Tn hiu xoay chiu t u vo IN qua t Cl vo chn Baz ca T1 c khuych
i vi h s K1 v ly ra chn Colect ca T1(khuych i o pha). Tn hiu t
chn Colect ca T1 c a n chn Baz ca T3 qua t C3 c khuych i vi
h s K3 v ly ra chn Emit ca T3 (khuych i ng pha). Tn hiu t chn
Emit ca T3 a n chn Baz ca T2 qua t C4 c khuych i vi h s K2
(khuych i o pha). Tn hiu li ra c ly chn Colect ca T2 qua t C6. Tn
hiu sau 3 tng khuych i c h s khuych i K = K1.K2.K3 v ng pha vi tn
hiu vo.
43

Thc tp K thut in t 1

B mn in t -Vin thng

Tn hiu ti chn C ca T2 ngc pha vi tn hiu ti chn B ca T3 nn s dng

t C5 to mch hi tip m kh nhiu cao tn.
Nu ch s ng mt hoc hai tng khuych i ta cng phn tch tng t nh
trn.
3.3.1.3. Cc bc thc hin
1. Cp ngun +12V cho mng s A3-l.
2. t my pht tn hiu FUNCTION GENERATOR ca thit b ATS - 11 N ch :
Pht dng sin (cng tc FUNCTION v tr nh hnh v).
Tn s 1kHz (cng tc khong RANGE v tr 1k v chnh b sung bin tr
chnh tinh FREQUENCY
Bin ra 10V t nh ti nh(Chnh bin tr bin AMPLITUDE)
3. t thang o th li vo ca knh 1 dao ng k 50mV/cm, knh 2 2V/cm, thi
gian qut 1ms/cm. Chnh cho c hai tia nm gia khng phn trn v phn di ca
mn dao ng k. S dng cc nt chnh v tr dch tia theo chiu X v Y v v tr
d quan st.
Ni knh 1 dao ng k vi tng cht vo tu theo th nghim, ni knh 2 dao
ng k vi tng li ra tu theo th nghim.
4. Ni tn hiu t my pht vi li vo IN theo hnh A3-1a. o bin xung vo
v xung ra (colletor - li ra A) ca tng T1.
Tnh h s khuych i K1=Ura/Uvo (T1) =

Hnh A3 - 1a: B khuych i trn Tranzitor T1 - xc nh K1

5. Ni tn hiu t my pht vi li vo B theo hnh A3- 1b. o bin xung vo v
xung ra (collector - OUT/C) ca tng T2.
Tnh h s khuych i K2 = Ura/Uvo(T2)=

44

Thc tp K thut in t 1

B mn in t -Vin thng

Hnh A3-lb: B khuych i trn Tranzitor T2- xc nh K2

6. Tnh h s khuych i khi ghp hai tng: K(tnh ton)= K1.K2 =
7. Ni A vi B (hnh A3-1c) ghp hai tng khuych i T1, T2 bng mch C4,
R8//R9. Cp tn hiu my pht vo IN. o bin xung vo (ti IN) v xung ra (ti
Tnh h s khuych i K (o) = Ura/Uvao (T1 - T2) =

Hnh A3 - 1c. B khuych i ni tng bng mch RC. Xc nh K1, K2

8. So snh gi tr h s K (tnh ton) v K(o). Tnh h s mt mt khi ni tng:
K(CR ) [%] = (K(tnh)- K(o)). 100/K (tnh) =
9. Ni A vi E v F vi B ghp hai tng khuych i T1, T2 qua tng lp li emitter
T3 - hnh A3- l (lu tng lp li emitter c tr vo ln v tr ra nh). o bin
xung vo (ti IN) v xung ra (ti C). Tnh h s khuych i K (o 2) = Ura/Uvo(T1
,2,3). Tnh h s mt mt khi ni tng:
K(T3 ) [%] =(k(tnh)- K(o)>.100/K (tnh) =

Hnh A3- 1d. B khuch i vi b lp li emitter ghp tng

Ch : Khi c tn hiu nhiu cao tn, ni G vi H to mch phn hi m kh nhiu
45

Thc tp K thut in t 1

B mn in t -Vin thng

10. So snh gi tr h s mt mt h s khuch i trong hai trng hp ni tng bng

mch CR v bng tng lp li emtter. Gii thch kt qu
3.3.2. KHUCH I VI SAI
Th nghim v b khuych i vi sai thc hin trn s hnh A3-2

Hnh A3-2. s khuch i vi sai v khuch i thut ton

3.3.2.1. Nhim v
Tm hiu nguyn tc hot ng ca b khuych i vi sai
Tm hiu v h s khuych i v my pht dng ca b khuch i vi sai
3.3.2.2. Nguyn l hot ng
B khuch i vi sai c cho trn hnh A3-2a.

Hnh A3 - 2a. S khuch i vi sai

Tn hiu vo c th a qua im A hay im TP3 cn tn hiu ra c th ly ti
im C1 hay C2. y hai tranzitor T1, T2 v hai in tr R2, R3 c cc thng s v
gi tr ging ht nhau m bo s i xng chng tri, nhiu trong cng iu
kin nhit , mi trng.
Tranzitor T3 ng vai tr l ngun dng n nh.
Khi cha c tn hiu vo th in p trn hai cc gp ca tranzitor l nh nhau
46

Thc tp K thut in t 1

B mn in t -Vin thng

nn in p ly trn ng cho cu Ura = Ura1 - Ura2 =0.

Khi c mt tn hiu vo, gi s Uvaol >0, Uvao2= 0 th do tc dng ca in th li
vo xut hin dng in li vo ca hai tranzitor, dng cc gc ca T1 tng ln cn
dng cc gc ca T2 gim xung. Khi dng IE1, IC1 tng ln cn dng IE2, IC2 gim
xung. S thay i in p din ra ngc chiu vi cng mt s gia v dng IE = IE1 +
IE2 = const (chnh l dng qua tranzitor T3).
in p trn cc gp ca tranzitor T1 l Ucl = +Vcc - IclRcl gim mt lng l ucl
cn in p trn tranzitor T2 l Uc2 = +Vcc - Ic2Rc2 tang mt lng l Uc2.
Vi cch a tn hiu vo nh vy th ta c tn hiu u ra ly trn cc gp ca
tranzitor l u ra o cn ly ra trn cc gp ca tranzitor T2 l u ra thun. Tn hiu
ly ra trn hai cc gp ca tranzitor gi l tn hiu vi sai.
Ura = Uc2- Ucl = Uc2 + Ucl =2Uc1 = 2|Ic|Rc.
Khi mc T3 (ni J2), th tc dng n nh dng, b nhit tng ln so vi khi dng
in tr R4 (ni J1).
3.3.2.3. Cc bc thc hin
1. Cp ngun +12V cho mng s A3- 2. Ni s nh hnh A3 - 2a.
2. Mc ng h o: ng h o chnh lch th gia hai collector ca cp
transistor vi sai T1 - T2: Ni cc cht ng h o (V: Cl v C2) ca mch A3-2a vi
b o hin s DIGITAL VOLTMETER ca thit b chnh ATS- 11 N. t cng tc
khong o 20V.
3. Ni Jl (cc J cn li ngt). Ni cc bin tr 1K v 10K (ca thit b chnh
ATS- 11N vi ngun +5V, t v vi li vo s khuych i vi sai nh hnh A3-2a.
4. Vn c hai bin tr v ni t, UB(T1) = UB = 0. Ghi gi tr Ura ch th trn
ng h. Nu Ura= Uofset 0, gii thch nguyn nhn v sao?
B

Xc nh chiu th Ura, xem transistor no trong T1-T2 cm hn. Vn t t

bin tr li vo ca n cho n khi th ra Ura = 0. o th UB0 tng ng.
5. Vn cc bin tr 1K v 10K ca thit b chnh tng dn tng bc UB(T1 )
hoc UB(T2). mi bc, o cc gi tr th li vo UB(T1) v UB(T2) v gi tr th ra
tng ng. Xc lp gi tr h s khuch i vi sai ng vi tng cp U(In1 ), U(In2)
theo biu thc:
B

K = (Ura- Uoffset)/(UB(T1 ) -UB (T2)) =

6. Xc nh khong UB(T1) v UB(T2) m h s K khng i
B

7. Ngt J1, ni J2. Lp li th nghim trn. So snh kt qu cho 2 trng hp.

Gii thch vai tr ca T3.
47

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.3. B KHUCH I THUT TON TRN TRANZITOR

Th nghim v b khuych i thut ton dng transistor thc hin trn mng s
hnh A3-2
3.3.3.1. Nhim v
Tm hiu nguyn tc hot ng ca khuch i mt chiu (khuch i thut ton).
Tm hiu v c trng khuych i ca b khuch i thut ton.
3.3.3.2. Nguyn l hot ng

Hnh A3-2b. B khuch i thut ton dng transistor

Tn hiu c ly t cc Colect ca transistor T1 hoc T2 l tn hiu vi sai a
vo chn B ca transistor T4 (mc theo kiu EC).
T4, Dl, D2 ch tnh gn nh thng.
Tn hiu ti u ra khuych i vi sai a n chn Baz ca T4.
na chu k m ca tn hiu: Tn hiu c khuych i o pha qua T4 lm
cho T6 (mc CC) m v khuych i. in p ly ra ti im OUT.
na chu k dng ca tn hiu: Tn hiu c khuych i o pha qua T4 lm
ng T6. Tn hiu khi i thng qua Dl, D2 lm m v khuych i T7 (mc CC).
in p ra ly ti OUT.
Transistor T3 v T5 c tc dng nh mt ngun dng n nh im cng tc ca
mch.
3.3.3.3. Cc bc thc hin
1. Cp ngun + 12V cho mng s A3 -2
Ch cm ng phn cc ca ngun
2. t my pht tn hiu FUNCTION GENERATOR ca thit b chnh ATS 11N ch :
48

Thc tp K thut in t 1

B mn in t -Vin thng

Pht dng sin(cng tc FUNCTION v tr v hnh sin)

Tn s 1kHz (cng tc khong RANGE v tr 1K v b sung bin tr chnh tinh
FREQUENCY)
Bin ra 200mV- t nh ti nh (chnh bin tr bin AMPLITUDE).
3. Ni J2. Ni Cl vi B4. Bt in v o in th ra(th ra Uoffset)
4. Ni cht K vi K1. o ch mt chiu ca s , tnh dng qua cc
transistor
o st th trn R5, tnh I(T3)-U(R5)/4K7 (mA)=
o st th trn R3, tnh I(T3)= U(R4)/2k (mA) =
Dng I(T1) = I (T3)-I(T2) (mA) =
o st th trn R13, tnh I(T4,5)= U(R15)/1K5(mA)=
5. Ni my pht xung ca thit b chnh vo li vo na). o bin xung vo v
xung ra khi ni ln lt cc cht K vi K1, K2, K3, K4. Ghi gi tr vo bng A3-l.
Bng A3 - 1
Cht ni
Jl
J2
J3
J4

U vo
200mV
200mV
200mV
200mV

Ura

K= Ura/Uvo

T s tr
R9/R8=
R10/R8=
R11/R8=
R12/R8=

So snh kt qu gia h s K o c vi t s tr tng ng. Gii thch kt qu

6. S dng my pht xung ngoi kho st c trng tn s ca b khuch i.
Thay i tn s xung vo t cc tiu n cc i.
o bin xung vo v xung ra mi tn s. Tnh h s khuch i th =
Ura/Uvo cho mi bc dch tn s. Ghi kt qu vo bng A3-2.
Bng A3-2
10Hz

10kHz

100kHz

U vo
Ura
K

49

500kHz

1MHz 2MHZ

Thc tp K thut in t 1

B mn in t -Vin thng

Bi 4. S DAO NG TN HIU DNG SIN

1. MC CH
Mc ch ca bi th nghim ny l tm hiu v cc mch dao ng hnh sin nh:
b dao ng dch pha zero, b to dao ng LC, b ao ng Armstrong, b to dao
ng thch anh
2. C S L THUYT
thc hnh tt c bi th nghim yu cu sinh vin cn nm r mt s im
sau:
+ C s l thuyt v mch dao ng.
+ iu kin dao ng ca mch c hi tip.
+ Nguyn l dao ng ca mch ba im in dung.
3. CC BI THC HNH .
3.1. THIT B S DNG
1. Thit b chnh cho thc tp in t tng t ATS- 11N
2. Khi th nghim AE- 104N cho bi thc tp v dao ng (Gn ln thit b
chnh ATS- 11 N)
3. Dao ng k 2 tia
4. Ph tng: dy c cht cm hai u
3.2. CP NGUN V DY NI
Khi AE-104N cha 5 mng s A-l...5, vi cc cht cp ngun ring. Khi s
dng mng no cn ni dy cp ngun cho mng s o. t (GND) ca cc mng
s c ni sn vi nhau, do ch cn ni t chung cho ton khi AE-104N
1. B ngun chun DC POWER SUPPLY ca thit b ATS- 11 N cung cp cc
th chun + 15V, + 12V c nh
2. B ngun iu chnh DC POWER SUPPLY ca thit b ATS- 11 N cung cp
cc gi tr in th mt chiu 0...+15V v 0....-15V. Khi vn cc bin tr chnh ngun,
cho php nh gi tr in th cn thit. S dng ng h o th DC trn thit b chnh
xc nh in th t
3. Khi thc tp, cn ni dy t cc cht cp ngun ca ATS-11N ti cp trc tip
cho mng s cn kho st
Ch : Cm ng phn cc ca ngun v ng h o
50

Thc tp K thut in t 1

B mn in t -Vin thng

3.3. CC BI THC HNH

3.3.1. S DAO NG DCH PHA ZERO
3.3.1.1 Nhim v
Tm hiu nguyn tc lm vic v c trng ca b dao ng trn c s b khuch
i khng o c phn hi dng kiu dch pha zero t li ra ti li vo.
3.3.1.2 Nguyn l hot ng

Hnh A4-1 . B dao ng dch pha zero

Mch dao ng dch pha zero s dng mch khuych i c khu hi tip l
mch lc thng di nh hnh di y.

in p Ur s ng pha vi Uv ti tn s

1
R1R2C1C2

l tn s cng hng ,

ca b lc di thng). Ti tn s mch s t dao ng. B dao ng khi gi l b

dao ng dch pha zero.
Trong s mch in th nghim:
Khu hi tip gm C5, R9 v C2, R2, bin tr P2
Tn hiu qua hai tng khuych i o pha T1 v T2 s ng pha vi tn hiu vo
(tn hiu Collector T2 ng pha vi tn hiu Baz T1 )
Tn hiu hi tip t u ra qua khu hi tip (gm C5, R9 v C2, R2, bin tr P2)
c a tr li u vo. V khu hi tip khng lm thay i pha ca tn hiu hi tip
(dch pha bng 0) nn ta c hi tip dng v mch s dao ng. Tn s ao ng ca
mch khi tha mn iu kin hi tip theo tnh ton s l (
51

1
R9 ( R2 + P2 )C5C2

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.1.3. Cc bc thc hin.

1. Cp ngun 12V cho mng s A4-1.
2. Dng dao ng k quan st v o tn hiu. Ni knh 1 sao ng k vi li
vo A/D. Ni knh 2 dao ng k vi li ra C/D
3. t my pht tn hiu FUNCTION GENERATOR ca thit b chnh ATS-11N
ch :
Pht dng sin (cng tc FUNCTION v tr v hnh sin)
Tn s 1kHz (cng tc khong RANGE v tr 1k v chnh b sung bin tr
chnh tinh FUNCTION). Bin ra 100mV nh - nh (chnh bin tr bin
AMPLITUDE)
4. Ni li ra my pht xung vi li vo A/IN ca s A4- 1. Bt ngun in.
iu chnh bin tr P1 nhn xung ra khng mo v c bin c khuch i.
Kim tra phn cc xung ra collector T1 l ngc pha xung vo, phn cc xung ra
collector T2 cng pha vi xung vo. Sau ngt tn hiu t my pht
5. Kim tra ch mt chiu cho transistor T1 , T2. o st th trn tr R3 v R7,
tnh dng qua T1 , T2
6. Ni Jl. Chnh P1 li ra xut hin xung sin khng mo dng. t P2 3 v
tr: cc tiu gia, cc i. o chu k xung ra tng ng trn dao ng k, tnh tn s
dao ng F(Hz) = 1/T(giy). Ghi kt qu vo bng A4-l. So snh kt qa o vi kt
qu tnh ton. Lp li th nghim khi ni J2.
Bng A4- 1

7. Nu hai c im c th v khuych i v phn hi s lm vic ch

pht xung.
3.3.2. S DAO NG DCH PHA
3.3.2.1 Nhim v
Tm hiu nguyn tc lm vic v c trng ca b dao ng c phn hi vi 3
dch pha C-R tr thnh b dch pha zero.
52

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.2.2 Nguyn l hot ng

Hnh A4-2. B dao ng dch pha

hiu v mch dch pha ny ta kho st mch RC li ra trn R nh hnh di
y.

Vi mch ny ta c h s truyn t

T ta tnh ra c gc dch pha l:

= arctg(1/RC) (= phn o / phn thc)
Nh vy ta thy rng (p<900 khi R v C khc 0.
Da vo mch di pha trn ta tm hiu k nguyn l hot ng ca mch dao ng
dch pha cho trn hnh A4-2 nh sau:
Tranzitor T1 c tc dng khuch i o pha tn hiu.
mch dao ng c th n phi tun theo iu kin dao ng l iu kin
v pha. Trong s s dng khu hi tip gm 3 mch RC nh trn. L do phi
dng n 3 mch v nh trn ta kho st, mi mch RC ch to dch pha mt gc
<900 nn to ra mt gc dch pha l 1800 th phi cn n 3 mch RC nh trn ghp
vi nhau (mch th nht gm c Cl,R3, mch th hai gm C2 v R4 +Pl v mch th
3 l C3, R2).
Nh vy hai iu kin v dao ng tho mn. Mch s dao ng v to ra tn
hiu iu ho hnh sin.

53

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.2.3. Cc bc thc hin

1. Cp ngun 12V cho mng s A4-2
2. Ngt J1 khng ni mch phn hi cho T1. Kim tra ch mt chiu cho
transistor T1. o st th trn tr R1, tnh dng qua T1
3. t thang o th li vo ca dao ng k 5V/cm, thi gian qut 1ms/cm
Chnh cho tia nm gia mn dao ng k. S dng cc nt chnh v tr dch tia
theo chiu X v Y v v tr d quan st
Ni knh 1 dao ng k vi li ra C/D
4. Ni Jl, quan st tn hiu ra, iu chnh bin tr P1 tn hiu ra khng b mo
dng. V li dng tn hiu ra. o chu k xung, tnh tn s my pht:
T = .
f= 1/T(giy)..
3.3.3. S DAO NG CAO TN KIU LC NI TIP (COLPITTS)
3.3.3.1. Nhim v
Tm hiu nguyn tc lm vic v c trng ca b dao ng Colpitts
3.3.3.2. Nguyn tc hot ng
Trn s hnh A4-3 gii thiu mt b dao ng cao tn Colpitts kiu LC ni
tip.

Hnh A4-3. B dao ng LC kiu ni tip (s Colpitts)

Ti ca mch khuych i T1 (mc theo kiu BC) l mch cng hng gm L1
v C2, C3. tn s cao, t Cl ngn mch thnh phn xoay chiu t Baz xung t.
Ta c tn hiu li ra v li vo trong s khuych i Baz chung l ng pha cho
nn tn hiu li ra trn Colect c a v chn Emit qua t C2,C3 l ng pha
nhau (tho mn iu kin v pha) duy tr hi tip dng v mch s t dao ng
Tn s dao ng bng tn s cng hng ca mch tnh theo cng thc:
54

Thc tp K thut in t 1

B mn in t -Vin thng

Trong :
L = L1, C=C2.C3/(C2+C3), hoc C- (C2+C4).C3/(C2+C4+C3), tu theo vic ni
hay khng ni J1 .
thay i gi tr tn s dao ng, c th thay i gi tr L hoc C.
in p trn t C3 c a v cc E (mch khuych i BC) duy tr hi tip
ng Mch tha mn iu kin dao ng vi tn s
3.3.3.3. Cc bc thc hin
1. Cp ngun +12V cho s hnh A4-3
2. Khng ni J1
3. Kim tra ch mt chiu cho transistor T . o st th trn tr R2 base T1 :
U(R2) =
Chnh bin tr Pl U(R2)=7.3V, m bo.cho T1 ch khuch i vi dng
II 6 7mA.
4. t knh o dao ng k ch AC. iu chnh thi gian qut v thang o
th li vo dao ng k thch hp quan st tn hiu. Ni knh 1 dao ng k vi li
ra s hnh A4-3
5. Quan st tn hiu ra trn dao ng k. Chnh Pl li ra xut hin xung sin
khng mo dng. V dng tn hiu ra
T kt qu th nghim tnh tn s dao ng F(Hz)= l/T(giy)=
Vi cc gi tr Ll= ......... H cho trn s (sai s 10%)
Tnh tn s dao ng ca mch f(Hz)=
So snh kt qu o vi kt qu tnh ton
6. Lp li th nghim khi ni J1
7. V dng tn hiu ra
T kt qu th nghim tnh tn s dao ng F(Hz) = l/T(gy) =
Vi cc gi tr Ll= ......... H cho trn s (sai s 10%)
Tnh tn s dao ng ca mch f(Hz)=
So snh kt qu o vi kt qu tnh ton
8. So snh kt qu th nghim cho cc trng hp th nghim trn
55

Thc tp K thut in t 1

B mn in t -Vin thng

3.3.4. S DAO NG ARMSTRONG

3.3.4.1. Nhim v
Tm hiu nguyn tc lm vic v c trng ca b dao ng c phn hi dng
qua bin th kiu Armstrong
3.3.4.2. Nguyn tc hot ng

Hnh A4-4. B dao ng Annstrong

Ta thy tn hiu gia Colector v Base ca tranzitor T1 l ngc pha nhau, tn
hiu colector c a qua mt bin th kiu Armstrong c hai cun dy qun
ngc nhau nn n lm o pha tn hiu mt ln na v a v cc B ca tranzitor T1.
Nh vy l iu kin v pha c tho mn. y ta thay i gi tr ca chit
p Pl c iu kin v bin cho mch dao ng.
3.3.4.3. Cc bc thc hin
1. Cp ngun +12V cho mch A4-4
2. Ni E-F phn cc base cho transistor T1. Kim tra ch mt chiu cho
transistor T1 . o st th trn bin tr P1 , tnh dng qua T1 . Chnh bin tr Pl
dng qua T1 3-4mA cho transistor T1 dn ch khuch i
3. t thang o th li vo ca dao ng k 5V/cm, thi gian qut 1ms/cm Chnh
cho Tia nm gia mn dao ng k. S dng cc nt chnh v tr dch tia theo chiu
X v Y v v tr d quan st
Ni knh 1 dao ng k vi li ra C
4. Ni cp A vi E v B vi F to mch phn hi tn hiu. Quan st tn hiu ra. Nu
khng c tn hiu pht ni o chiu A-F v B-E. Khi s c tn hiu, iu chnh
bin tr P1 tn hiu ra khng b mo dng
V li dng tn hiu ra.
o chu k xung, tnh tn s my pht:
T=
F = l/T(giy)
56

Thc tp K thut in t 1

B mn in t -Vin thng

5. Gii thch v sao khi o chiu ni A,B vi E- F, s ang pht tn hiu li

khng pht v ngc li
6. Ni J1 , J2. Quan st s thay i tn hiu ra. Chnh bin tr Pl . o tn s pht
tng ng
o chu k xung, tnh tn s my pht:
F=1/T(giy)=..................................
3.3.5. DAO NG THCH ANH
3.3.5.1. Nhim v
Tm hiu nguyn tc lm vic v c trng ca b dao ng chun thch anh.
3.3.5.2. Nguyn tc hot ng
Khi cn mch to dao ng c tn s dao ng cao ngi ta thng dng mch
to dao ng c thch anh. Thch anh c s tng ng nh sau.

Thch anh c hai tn s cng hng: ni tip v song song.

Tn s cng hng ni Tip:

Tn s cng hng song song:

trong Ctd = CqCp/(Cq +Cq)
Khung dao ng thch anh c th t n nh tn s: f/f0= 10-6 10-10 Trn hnh
v A4-5 mch s dng thch anh XT cng tc ti ch cng hng song song.
Khi mch tng t vi mch dao ng ba im in dung. Tn s dao ng
bng vi tn s cng hng ring ca thch anh.
iu chnh bin tr Pl c dao ng ra n nh.

57

Thc tp K thut in t 1

B mn in t -Vin thng

Hnh A4-5. B dao ng thch anh

3.3.5.3. Cc bc thc hin
1. Cp ngun + 12V cho mng s A4-5
2. Ngt Jl. Kim tra ch mt chiu cho transistor T1. o st th trn tr R3,
tnh dng qua T1. Chnh bin tr Pl ng qua T1 3-4mA cho transistor dn ch
khuch i
3. t thang o th li vo ca dao ng k 5V/c
t thi gian qut ca dao ng k 1ms/cm
Chnh cho tia nm gia mn dao ng k. S dng cc nt chnh v tr dch
Tia theo chiu X v Y v v tr d quan st
Ni knh 1 dao ng k vi li ra C

Hnh A4-5. B dao ng thch anh

4. Ni J1 to mch phn hi tn hiu. Quan st tn hiu ra, iu chnh bin tr
Pl tn hiu ra khng b mo dng. V li dng tn hiu ra
5. o chu k xung, tnh tn s my pht: f(C3-L)= 1/T(giy)
F = 1/t(giy) =..............................

58

Thc tp K thut in t 1

B mn in t -Vin thng

Bi 5. S DAO NG TN HIU KHC SIN

1 . MC CH
Mc ch ca bi thc hnh l tm hiu cc mch dao ng khc sin nh: mch
to dao ng a hi (to dy xung vung), mch n hi hay mch to xung tam gic. ,
2.C S L THUYT
thc hnh tt c bi th nghim yu cu sinh vin cn nm r mt s im
sau:
Qu trnh phng np ca t in qua in tr v cc kha in t( transistor). S
chuyn trng thi ca cc kha in t cc v tr ngng, qu trnh to dao ng
trong cc mch a hi (dao ng c rt nhiu tn s khc nhau thng c ph tn s
gn nh lin tc trong mt on no ).
c trng in tr m ca UJT (trong qu trnh dao ng c nhng lc diode c
in tr thun m tc l Rdiode<0), ng dng trong vic to dao ng.
3. NI DUNG THC HNH
3.1. CC THIT B S DNG
+Thit b chnh cho thc tp in t tng t ATS- 11 N.
+Khi th nghim AE- 105N cho bi thc tp v dao ng (gn ln thit b ATS11 N).
+ Dao ng k 2 tia.
+ Ph tng: dy c cht cm hai u.
3.2. CP NGUN V NI DY
Ch : Khi AE-105N cha 4 mng s A5-l...4, vi cc cht cp ngun
ring.
Khi s dng mng no cn ni dy cp ngun cho mng s . t (GND)
ca cc mng s c ni sn vi nhau, do ch cn ni t chung cho ton
khi AE- l05N.
+ B ngun chun DC ROWER SUPPLY ca thit b ATS- 11 N cung cp cc
th chun - 5V, + 12V n nh.
+ B ngun iu chnh DC ADJUST POWER SUPPLY ca thit b ATS- 11 N
cung cp cc gi tr din th mt chiu t +15V ...-15V. Khi vn cc bin tr chnh
ngun, cho php nh gi tr in th cn thit. S dng ng h o th DC trn thit
b chnh xc nh in th t vo cc bn mch th nghim.
59

Thc tp K thut in t 1

B mn in t -Vin thng

+ Khi thc tp phi cung cp ngun ca ATS- 11 N ti cp trc tip cho mng s
cn kho st(ch cn u ni cc cht ngun ng in p v cc m dng).
Ch : Cm ng phn cc ca ngun v ng h o
3.3. CC BI THC TP
3.3.1. S DAO NG A HI
3.3.1.1. Nhim v
Tm hiu nguyn tc lm vic v c trng ca b dao ng a hi i xng (chu
k dao ng T1=T2) v khng i xng dng transistor (chu k dao ng T1 khc T2).

Hnh 5- la S nguyn l mch a hi

Mch a hi t dao ng c hai trng thi cn bng khng bn (T1 m, T2 kha
v T1 kha T2 m). Mi trng thi ch n nh trong mt thi gian hn ch no ri
t ng chuyn sang trng thi kia v ngc li.

60

Thc tp K thut in t 1

B mn in t -Vin thng

Hnh 5 - 1b Gin xung b a hi

Hai trng thi trn ca mch a hi t dao ng cn gi l hai trng thi chun
cn bng.
y l hai tng khuch i c phn hi dng tc l K* >> 1
Trong K l h s khuch i ca transistor l h s hi tip ca mch.
3.3.1.2. Nguyn l hot ng
Vic hnh thnh xung vung ca ra c thc hin sau mt thi gian, 1 = t1-t0
i vi ca ra1, hoc 2 = t2 - t1 i vi ca ra 2. Nh cc qu trnh t bin chuyn
trng thi ca s ti cc thi im to, t1, t2 .
Trong khong thi gian 1, tranzitor T1 kho T2 m. T C1 c np y in
tch trc lc t0 by gi n phng in qua ng C1->T2CE -> GND->Vcc-> R1-> C1
lm in th trn baz ca T1 thay i theo hnh5 - b2. ng thi trong thi gian ny,
T C2 c ngun Vcc np theo ng C2->T2BE -> GND->Vcc->C2 lm in th
trn Baz ca T2 thay i theo hnh 5 - b4.
Ch : B, E, C l cc cc ca transistor.
Lc t = t1, UB1 = 0.6V tranzitor T1 m, xy ra qu trnh t bin ln th nht, nh
mch hi tip dng lm s lt trng thi T1 m, T2 ng.
Trong khong thi gian 2 = t2 - t1 trng thi trn c gi nguyn, t C2 (
c np trc lc ta bt u phng in v t Cl bt u qu trnh np in tng t
nh nu trn cho ti lc t= t2, UB2 = 0.6V lm T2 m v xy ra t bin ln th hai,
chuyn s v trng thi ban u T1 kho, T2 m.
Chu k xung ca li ra:
Tra= l + 2
61

Thc tp K thut in t 1

B mn in t -Vin thng

y chu k tn hiu ra ch yu ph thuc vo R1 , R2, Cl , C2 b qua yu t

nh in tr ca transistor v R3 ,R4>>R1, R2 ta c cng thc gn ng sau :
l -R1C1ln2 0.7 R1C1
2 R2C2ln2 0.7 R2C2
Nu Chn i xng R1 = R2, Cl = C2, T1 ging ht T2 ta c 1= 2 v nhn
c a hi i xng, ngc li ta c a hi khng i xng 1 khc 2
Bin ca xung ra c xc nh gn ng vi gi tr ca ngun Vcc cung cp.
to ra cc xung c tn s thp ln hn 1000Hz, cc t C1 , C2 trong s cn
c in dung rt ln. Cn cn to ra cc xung c tn s cao hn 10KHz do nh hng
qun tnh, in dung k sinh ca transistor lm xu cc thng s ca xung vung.
Nh vy mch a hi dng tranzitor ch dng tn s trung bnh, vng tn s
thp v cao ngi ta a ra s a hi dng IC tuyn tnh, tn s cao, chnh xc
ngi ta dng my pht thch anh.
3.3.1.3. Cc bc thc hin
1. Cp ngun +12V cho mng s A5-l
2. Cha ni cc J, ngt cc mch phn hi cho T1 , T2. Kim tra ch mt
chiu cho transistor T1 , T2. o st th trn tr R1 , R2, tnh dng qua T1 , T2. Cc
transistor phi c dn gn bo ho hoc bo ho (th trn collector T1 , T2 gn hoc
bng 0)
3. Dng dao ng k quan st v o tn hiu. Ni knh 1 dao ng k vi li ra
OUT1, knh 2 dao ng k vi li ra OUT2.

Hnh A5-1. B dao ng a hi

4. Ni cc cp cht J theo bng A5 - 1 . Ti mi cp ni, quan st v v li dng
tn hiu ra. o chu k T xung ra, tnh tn s my pht: f-1/T(giy)
Ni J1&J4

Ni J2&J5

Dng xung ra
62

Ni J3&J6

Ni J1&J5

Ni J2&J4

Thc tp K thut in t 1
Tnh CR
F. =sec)

Cl.R3=
C4.R4=

B mn in t -Vin thng
C2.R3=
C5.R4-

C3.R3=
C6.R4=

Cl.R3=
C5.R4-

C2.R3=
C4.R4=

T(giy)
F(Hz)=1/T
K-T/RC

Gii thch nguyn tc hot ng ca s . Kt lun v vai tr ca mch CR

trong vic hnh thnh xung ra.(Hiu nguyn tc hot ng ca tng thnh phn trong
s , nht l nh hng thng s ca R, C to ra chu k ca xung ra).
3.3.2. S N HI
3.3.2.1. Nhim v
Tm hiu nguyn tc lm vic v c trng ca b n hi hnh thnh dng tn
hiu. Ch : xem dng xung li vo c nh hng nh th no xung li ra.
3.3.2.2. Nguyn l hot ng

Hnh 5 - 2a S nguyn l ca mch n hi

Mch a hi i l mch c mt trng thi n nh bn. Trng thi th 2 ca n
n nh trong mt thi gian nht nh no sau li quay tr li trng thi cn bng
bn ban u.
Nh trong s trn th T1 kho, T2 m bo ho nh in tr R1. T2 m bo ho
nn lm cho UTBI Uc2 0 nn lm cho T1 kho y l trng thi n nh bn.
Khi li vo c mt xung kch dng ln lm cho T1 m. Lc in th trn
cc C ca t C gim t +Vcc xung gn bng 0. Bc nhy in p ny qua mch RIC
t ton b ln cc B ca T2 lm cho in th trn B ca T2 ang mc thng (khong
0.6V) gim xung -Vcc + 0.6 -Vcc lm cho T2 b kho. T1 duy tr trng thi m mt
khong thi gian ngay c khi in p vo bng 0. T C bt u np in t T1 -->
GND lm cho in th trn cc B ca T2 tng dn v sau mt thi gian th T2 s m v
qua mch hi tip dng R, R2 a mch v trng thi ban u i xung kch tip
theo.
63

Thc tp K thut in t 1

B mn in t -Vin thng

Nh vy l ng vi mt xung li vo ta c mt xung li ra v rng xung ph

thuc vo tham s ca mch. Ni mt cch n gin th mch ny tc dng sa
rng xung.
Thng ngi ta chn T>tx>t
y T l chu k xung vo
tx rng xung ra
t rng ca xung vo.

Hnh 5 - 2b. Gin xung ca mch n hi

3.3.2.3. Cc hc thc hin
1. Cp ngun +12V cho mng s A5-2

Hnh A5-2. S n hi dng transistor

2. t thang o th li vo ca dao ng k 5V/cm, thi gian qut 1ms/cm
64

Thc tp K thut in t 1

B mn in t -Vin thng

- Chnh cho c hai tia nm gia khong phn trn v phn di ca mn dao
ng k.
Ni knh 1 dao ng k vi li vo IN/A. Ni knh 2 dao ng k vi li ra
OUT/C
3. Kim tra ch mt chiu cho transistor T1, T2. o st th trn tr R3, R6
tnh dng qua T1, T2. Chnh bin tr Pl T1 cm, khng c dng qua. T2 dn
4. t my pht tn hiu FUNCTION GENERATOR ca thit b ATS- 11N
ch : pht dng vung gc (cng tc FUNCTION v tr v hnh vung gc), tn s
1kHz (cng tc khong RANGE v tr 1k v chnh b sung bin tr chnh tinh
FREQUENCY). Bin ra100mV (chnh bin tr bin AMPLITUDE)
5. Ni li ra my pht xung vi li vo A/IN ca mch A5-2. Tng dn bin
my pht xung cho n khi li ra c tn hiu. o bin xung vo v in th ti base
T1(th ngng) th ti Emitter T1 -T2.
6. t bin xung my pht = 500mV. Vn bin tr Pl cho n khi li ra xut
hin tn hiu
Gii thch mi lin h gia th base T1 v bin xung cn khi ng s .
7. o rng xung ra, tm h s k lin h gia rng xung ra vi C2. R5:
= k.C2.R5
8. V li dng tn hiu tng ng ti cc im
- Tn hiu vo
- Tn hiu collector T1
- Tn hiu base T
- Tn hiu collector T2 (li ra)
Gii thch qu trnh hnh thnh rng xung ra?
3.3.3. S MY PHT UJT
3.3.3.1. Nhim v
Tm hiu nguyn tc lm vic, tnh cht ng m ca UJT nht l ti
sao, lc no UJT li c in tr m v nguyn tc phng np ca t in.
3.3.3.2. Nguyn l hot ng
S nguyn l v dng sng dao ng c trnh by nh hnh di
y :
a) Tranzitor mt chuyn tip (UJT)
Tranzitor mt chuyn tip (Unijuntion tranzitor - UJT) i khi cn gi l it 2
65

Thc tp K thut in t 1

B mn in t -Vin thng

y. Tuy gi l tranzitor nhng n c nguyn l hot ng khc hon ton so vi

tranzitor lng cc hay tranzitor trng
UJT c ch to trn mt phin bn dn N pha tp t.
Ngi ta to ra mt vng bn dn loi P pha tp nhiu sau
t min bn dn loi P ny ni ra mt in cc gi l Emit
(E). Hai u ca phin N ni ra hai in cc gi l Baz 1 v
baz 2. nh hnh v bn.
T cu to ca UJT ta c s tng ng nh sau:
Nu t vo B1 , B2 mt in p nh hnh v th ta c th tnh
c in p ti im C so vi B1khi E h mch.
U1 = UBBRB1/ (RB1 + RB2) = UBB/RBB
in p U1 cng chnh l in p t vo catot ca dit D. khi E h mch ch c
dng IB2 chy t B2 n Bl.
IB2 = UBB / RBB :
Nu E ni t hay h mch th it D b phn cc ngc v khi y qua emit E
ch c dng ngc IEO qua.
By gi ta xt trng hp t vo EB1 mt in p dng. Khi tng UEB1 t gi
tr 0 n U1 th IE0 gim xung 0 v khi in p catt v ant ca it D l nh
nhau. Tip tc tng UBB1 th it D s phn cc thun, to ra dng thun chy t cc E
vo phin baz ca UJT. Khi dng thun xut hin th cc ht dn c phun t min
Emit vo min Baz lm cho s ht dn ca min Baz B1 tng ln t ngt, lm cho
in tr RB1 gim i. V RB1 gim lm cho U1 ngy cng gim lm cho in p phn
cc thun t ln D co xu hng tng ln, dng IE thun tng lm cho U1 tip tc
giam.
Nh vy IE c xu hng ngy mt tng trong khi UEB c xu hng ngy mt
gim.
chnh l nguyn nhn xut hin hiu ng in tr m trong UJT.
Tuy nhin IE khng th tng mi m n b gii hn bi in tr ni ca ngun K
hiu ca tranzitor UJT nh sau:

b) Mch to xung dng tranzitor UJT

S nguyn l v dng sng dao ng c trnh by nh hnh di y
66

Thc tp K thut in t 1

B mn in t -Vin thng

S ngyn l ca mch

Dng sng ca mch to

to xung dng UJT

xung dng UJT

c) Nguyn l lm vic nh sau

T C c np in t ngun +Vcc qua RE' Khi in p trn t bng ~ +0.7V th
UJT m v t C phng in qua UJT lm cho in p trn hai cc ca t gim xung
bng in p bo ho ca UJT khi UJT ng v t C li np mt ln na, qu trnh
lp i lp li nn in p trn t in s c dng rng ca.
Nu mc B1 ca UJT vi mt in tr R1 th li ra c dy xung c rng
xung rt nh.

S nguyn l ca mch

Dng sng ca mch to xung dng UJT

3.3.3.4. Cc bc thc hin

a. Cp ngun +12V cho mng s A5-3
b. t thang o th li vn ca dao ng k 2V/cm/ thi gian qut 1ms/cm
Chnh cho c hai tia nm gia khong phn trn v phn di ca mn dao ng
k.
Ni knh 1 dao ng k vi li ra OUT/C

67

Thc tp K thut in t 1

B mn in t -Vin thng

Hnh A5-3. My pht xung s dng UJT

c. Quan st tn hiu ra. V li dng tn hiu. Thay i bin tr P1, quan st s
thay i chu k xung ra. Gii thch nguyn tc hot ng ca s ?
Ch : Thay i bin tr P lin quan n thi gian tch in ca t. Thay i gi
tr in dung ca C1 , in tr R2 lin quan ti ko di xung ra.
3.3.4. S HNH THNH TN HIU DNG TAM GIC
3.3.4.1. Nhim v
hiu c nguyn tc lm vic ca ta phi tm hiu nguyn tc lm vic v
c trng ca t in phng in qua transistor vi iu kin dng n dng (ch l
ch khi c dng n p li ra mi l xung tam gic).
3.3.4.2. Nguyn l hot ng
B hnh thnh xung tam gic da vo s phng np ca t in. ch nh, T1
lun thng, Ura ~ 0.
+) Qu trnh qut thun:
Trong thi gian c xung iu khin vung cc tnh m a ti base ca T1. T1
ng, t Cl c np in qua T2 vi mt ngun dng gn nh khng i do in
(v iC bng hng s). y l hm

p ly ra trn t in Cl l
tuyn tnh bc nht theo t.
+) Qu trnh qut ngc.

Khi ht xung iu khin T1 li m bo ha, t in C s phng in qua T1. V

in tr thng mch ca T1 l rt nh nn thi gian phng ca t l rt nh c th ni
l tc thi nn qu trnh qut thun xy ra vi thi gian ngn.

68

Thc tp K thut in t 1

B mn in t -Vin thng

Hnh 5 - 4.a dng xung li vo v ra ca mch to xung tam gic

T thun>> T ngc
3.3.4.3. Cc hc thc hin
1. Cp ngun +12V cho mng s A5-4
2. t thang o th li vo ca dao ng k 2V/cm, thi gian qut 1ms/cm
Chnh cho c hai tia nm gia khong phn trn v phn di ca mn dao ng
k. Ni knh 1 dao ng k vi li ra OUT/C.

Hnh A5-4. B hnh thnh xung dng tam gic

3. Kim tra ch mt chiu cho transistor T1, T2. Ni li vo IN/A ln ngun 10V.
o st th trn tr R5 tnh dng qua T1 , T2. Chnh bin tr P1 T2 dn dng
5 6mA. St th trn collector T1 0 v T1 m bo ho
4. t my pht n hiu FUNCTION GBNERATOR ca thit b ATS-11N ch :
pht dng vung gc (cng tc FUNCTION v tr v hnh vung gc), tn s lkHz
(cng tc khong Range v tr 1k v chnh b sung bin tr chnh tinh
FREQUENCY). Bin ra 5V (chnh bin tr bin AMPLITUDE)
5. Quan st tn hiu ra. V li dng tn hiu. Thay i bin tr P1, quan st s thay i
chu k xung ra. Gii thch nguyn tc hot ng ca s ?
69

Thc tp K thut in t 1

B mn in t -Vin thng
MC LC
Trang

Bi 1. CC LOI DIODE...................................................................................................... 2
1. MC CH CHUNG ......................................................................................................... 2
2. C S L THUYT ......................................................................................................... 2
3. NI DUNG THC HNH................................................................................................ 2
3.1. THIT B S DNG...................................................................................................... 2
3.2. CP NGUN V NI DY ......................................................................................... 3
3.3. CC BI THC TP .................................................................................................... 3
3.3.1. C TRNG CA DIODE.................................................................................... 3
3.3.2 B HN CH V DCH MC TN HIU DNG DIODE................................. 12
3.3.3. S CHNH LU V LC NGUN .............................................................. 17
3.3.4. B HNH THNH TN HIU .............................................................................. 23
Bi 2. S KHUCH I TRANZITOR....................................................................... 27
1. MC CH ...................................................................................................................... 27
2.1 C S L THUYT ..................................................................................................... 27
3. CC BC THC HIN ............................................................................................... 27
3.1. THIT B S DNG.................................................................................................... 27
3.2. CP NGUN V DY NI ....................................................................................... 27
3.3. CC BI THC TP .................................................................................................. 28
3.3.1. KHUCH I MT CHIU TRANZITOR NI KIU E CHUNG ....................... 28
3.3.2. KHUYCH I XOAY CHIU TRANZITOR KIU E CHUNG.......................... 30
3.3.3. KHUYCH I XOAY CHIU (AC) TRANSISTOR VI MCH PHN HI M
CHO TNG KHUYCH I EMITTER CHUNG ........................................................... 33
3.3.4. S COLLECTOR CHUNG - TNG LP LI EMITTER............................ 36
3.3.5. KHUCH I TRANZITOR KIU BASE CHUNG........................................... 39
Bi 3. KHUCH I NI TNG DNG TRANZITOR................................................... 42
1. MC CH CHUNG ....................................................................................................... 42
2. C S L THUYT ....................................................................................................... 42
3. CC BI TH NGHIM ................................................................................................. 42
3.1. THIT B S DNG.................................................................................................... 42
3.2. CP NGUN V DY NI ....................................................................................... 42
3.3. CC BI THC TP .................................................................................................. 43
3.3.1 KHUCH I NI TNG ........................................................................................ 43
3.3.2. KHUCH I VI SAI........................................................................................... 46
3.3.3. B KHUCH I THUT TON TRN TRANZITOR ................................... 48
Bi 4. S DAO NG TN HIU DNG SIN............................................................ 50
1. MC CH ...................................................................................................................... 50
2. C S L THUYT ....................................................................................................... 50
3. CC BI THC HNH . ............................................................................................... 50
3.1. THIT B S DNG.................................................................................................... 50
3.2. CP NGUN V DY NI ....................................................................................... 50
3.3. CC BI THC HNH .............................................................................................. 51
3.3.1. S DAO NG DCH PHA ZERO............................................................... 51
3.3.2. S DAO NG DCH PHA .......................................................................... 52
3.3.3. S DAO NG CAO TN KIU LC NI TIP (COLPITTS)................... 54
3.3.4. S DAO NG ARMSTRONG .................................................................... 56
3.3.5. DAO NG THCH ANH .................................................................................. 57
Bi 5. S DAO NG TN HIU KHC SIN............................................................ 59
1 . MC CH ..................................................................................................................... 59
U

70

Thc tp K thut in t 1

B mn in t -Vin thng

2.C S L THUYT ........................................................................................................ 59

3. NI DUNG THC HNH.............................................................................................. 59
3.1. CC THIT B S DNG .......................................................................................... 59
3.2. CP NGUN V NI DY ....................................................................................... 59
3.3. CC BI THC TP .................................................................................................. 60
3.3.1. S DAO NG A HI ................................................................................... 60
3.3.2. S N HI .................................................................................................. 63
3.3.3. S MY PHT UJT....................................................................................... 65
3.3.4. S HNH THNH TN HIU DNG TAM GIC....................................... 68

71