T ng quan

Bi ny s gii thiu v tranzito lng cc (Bipolar Junction Transistor BJT). y l linh kin bn dn quan trng c 2 lp tip xc P-N v 3 chn in cc. Trong bi s trnh by v nguyn l hot ng ca tranzito lng cc 3 ch cp in phn cc cho n l ch tch cc, ch ngt v ch bo ha. Bi ny trnh by v cc cch mc c bn ca tranzito lng cc trong cc s mch khuch i l cch mc cc gc chung, cc pht chung v cc gp chung, c im ca tng cch mc. Trong bi ny cn cp n cc phng php phn cc cho tranzito nh phn cc bng dng cc gc, phn cc bng phn p v phn cc bng hi tip. ng thi trong chng ny cng trnh by v cc s tng ng ca tranzito trong ch khuch i tn hiu nh v trnh by v ch chuyn mch ca tranzito.

C s nguyn l
Ch ho t ng c a transistor npn v pnp
Tranzito lng cc gm c hai tip xc P-N c to nn bi 3 min bn dn loi P v N xp xen k nhau. Nu min bn dn gia l bn dn loi N th ta c tranzito lng cc loi P-N-P. Nu min bn dn gia l bn dn loi P th ta c tranzito lng cc loi N-P-N. a. Tranzito lng cc loi P-N-P (hay tranzito thun) cu to v k hiu trn s mch; b. Tranzito N-P-N (hay tranzito ngc) cu to v k hiu.

Tranzito c 3 chn cc l: - Cc Pht k hiu l ch E (Emitter) l ngun pht ra cc ht ti in trong tranzito. - Cc Gc k hiu l ch B (Base) l cc iu khin dng in..

- Cc Gp k hiu l ch C (Collector) c nhim v thu nhn tt c cc ht dn t phn pht E qua phn gc B ti. - Hai tip xc P-N l tip xc pht-gc k hiu l TE (gi tt l tip xc pht), v tip xc gpgc k hiu l TC (gi tt l tip xc gp). Nguyn l lm vic ca tranzito Khi cha cung cp in p ngoi ln cc chn cc ca tranzito th hai tip xc pht TE v gp TC u trng thi cn bng v dng in tng chy qua cc chn cc ca tranzito bng 0. Mun cho tranzito lm vic ta phi cung cp cho cc chn cc ca n mt in p mt chiu thch hp. C ba ch lm vic ca tranzito l: ch tch cc (hay ch khuch i), ch ngt v ch dn bo ha. C hai loi tranzito P-N-P v N-P-N u c nguyn l lm vic ging nhau, ch c chiu ngun in cung cp vo cc chn cc l ngc du nhau. + Ch ngt: Cung cp ngun in sao cho hai tip xc P-N u phn cc ngc. Tranzito c in tr rt ln v ch c mt dng in rt nh chy qua nn tranzito coi nh khng dn in. + Ch dn bo ha: Cung cp ngun in sao cho c hai tip xc P-N u phn cc thun. Tranzito c in tr rt nh v dng in qua n l kh ln. ch ngt v ch dn bo ha, tranzito lm vic nh mt phn t tuyn tnh trong mch in. ch ny tranzito nh mt kha in t v n c s dng trong cc mch xung, cc mch s. + Ch tch cc: Ta cp ngun in sao cho tip xc pht TE phn cc thun, v tip xc gp TC phn cc ngc. ch tch cc, tranzito lm vic vi qu trnh bin i tn hiu dng in, in p, hay cng sut v n c kh nng to dao ng, khuch i tn hiu,... y l ch thng dng ca tranzito trong cc mch in t tng t.

So snh gi a Transistor lo i Ge v Si

c i m c a cc ng c tuy n
H c tuyn vo: c tuyn vo m t mi quan h gia in p vo v dng in vo nh sau: UEB = f1(IE) khi UCB = const. Xt trng hp i vi tranzito lng cc Gecmani loi P-N-P. Khi cc gp h th c tuyn vo chnh l c tuyn Vn-Ampe ca tip xc P-N phn cc thun nn ta c: IE = I0(e
U /V EB T

1)

Ta c ng c tuyn vo m t trong hnh 6.2.

H c tuyn vo ca tranzito gecmani loi P-N-P

Khi UCB 0, c tuyn x dch rt t chng t in p trn cc gp t nh hng n dng in qua tip xc pht. H c tuyn ra: c tuyn ra biu th mi quan h gia dng in trn mch cc gp vi in p trn mch cc gp. Ta c mi quan h sau: IC = f2(UCB) khi IE = cont. Biu thc tnh dng in trn cc gp IC nh sau: IC = IE + ICBo

H c tuyn ra ca tranzito gecmani loi P-N-P

Thi t l p v n nh i m lm vi c cho transistor

Xc nh i n tr Colector (RC)
Mun tranzito lm vic nh mt phn t tch cc th cc phn t ca tranzito phi tho mn iu kin thch hp. nhng tham s ny ca tranzito nh mc trc bit, ph thuc rt nhiu vo in p phn cc cc chuyn tip colect v emit. Ni mt cch khc cc gi tr tham s ph thuc vo im cng tc ca tranzito. Mt cch tng qut, d tranzito c mc mch theo kiu no, mun n lm vic ch khuych i cn c cc iu kin sau: - Chuyn tip emit baz lun phn cc thun. - Chuyn tip baz colect lun phn cc ngc. C th minh ha iu ny qua v d xet tranzito, loi pnp (h.2.33). Nu gi UE, UB, UC ln lt l in th ca emit, baz, colect, cn c vo cc iu kin phn cc k trn th gia cc in th ny phi tho mn iu kin: UE > UB > UC Hy xt iu kin phn cc cho tng loi mch. -T mch chung baz vi chiu mi tn l hng dng ca in p v dng in, c th xc nh c cc tnh ca in p v dng in cc cc khi tranzito mc CB nh sau: UEB = UE UB > 0 IE>0

UCB = UC UB> 0 IC<0 Cn c vo iu kin in p UCB m, dng IC cng m c ngha l hng thc t ca in p v dng in ny ngc vi hng mi tn. - T mch chung emit, l lun tng t nh trn, c th xc nh c cc tnh ca in p v dng in cc cc nh sau: UBE = UB UE > 0 IB<0 UCE = UC UE> 0 IC<0 - Vi mch chung colect, cn c vo chiu qui nh trn s v iu kin c th vit: UB UC > 0 IB<0 UCE= UC UB< 0 IE<0 i vi tranzito npniu kin phn cc n lm vic ch khuych i l: UE<UB<UC T bt nh thc trn c th thy rng hng dng in v in p thc t trong tranzito pnp.

Phn c c cho transistor

Phn c c b ng dng c nh
S mch in nh hnh di. Trong s dng tranzito loi N-P-N nn c: Mch phn cc c nh

- in tr RB, gi l in tr nh thin, c u t dng ngun EC v cc gc phn cc thun cho tip xc pht - gc.

- in tr RC, gi l ti, c nhim v dn in p t dng ngun EC v cc gp sao cho tip xc gp - gc phn cc ngc. Dng in IC chy t dng ngun EC qua RC v m ngun EC. Dng in IB chy t dng ngun EC qua RB v m ngun EC. Trn ng ti dc ta chn im lm vic thch hp vi iu kin tn hiu u vo c gi tr dng in cc gc khng vt qu gi tr dng in I c tnh theo cng thc sau: IB = (EC UBE)/RB Theo cng thc trn, c ngun in ECC l c nh, in p UBE chn bng 0,2V cho tranzito gecmani v 0,6V cho tranzito silic nn dng IB l c nh. Trong trng hp mun thay i dng in IB, tc l thay i im lm vic tnh Q th ta thay i tr s in tr RB. V dng IB chn l mt hng s nn s mch trn (hnh 6.4) c gi l mch phn cc kiu c nh hay mch phn cc nh dng cc gc. Dng IB c gi l dng in nh thin. n nh ca mch nh thin. Khi tranzito hot ng, cc tham s ca mch s thay i do nhiu nguyn nhn, c bit l do nhit mi trng thay i. V vy, vic n nh im lm vic Q chn l rt cn thit. Ta gi thit rng tranzito trong hnh 6.4 c thay bng mt tranzito khc cng loi nhng c h s khuch i ln hn nh ch ra trong hnh, v v IB gi khng i ti IB2 bng mch phn cc bn ngoi, s dn n vic im lm vic Q1 phi di chuyn n Q2. im lm vic mi ny c th khng tha mn hon ton. c bit n c th lm cho tranzito chuyn sang ch bo ha. Lc ny chng ta phi thay i dng in IB m bo ch lm vic cn thit cho tranzito. n nh nhit cho tranzito: Vn quan trng th hai gy nh hng n s phn cc ca tranzito l s thay i nhit . Nh ta bit dng in ngc bo ha ICBo ph thuc nhiu vo nhit , iu ny c th gy kh khn cho vic s dng tranzito. Ngay c khi im lm vic tnh c xc nh vng ch tch cc th do nh hng ca nhit n vn c th chuyn sang ch bo ha. Trong hnh 6.5 ch ra h c tuyn ra ca tranzito 2N708 ti nhit +250C v +1000C. Ta thy r rng hu nh n lm vic ch bo ha ti nhit +1000C mc d n c phn cc gia vng ch tch cc ti +250C.

H c tuyn ra t0 = +250C (a) v +1000C (b) ca tranzito loi N-P-N 2N708

Phn c c b ng c u phn p
S mch cho trn hnh: S mch nh thin phn p

Trong mch, hai in tr R1 v R2 ni tip nhau v u trc tip gia hai cc ca ngun cung cp EC s to nn mch phn p, dng in phn p IP. p chy qua R1 v R2 khng ph thuc vo s bin i theo nhit ca cc dng in v in p trn cc chn cc ca tranzito. Do , st p do dng phn p to ra trn R2 cng khng ph thuc vo hot ng ca tranzito. in p trn cc gc chnh l st p trn in tr R2 do dng in phn p to nn, vy ta c: UB = IP.p R2 UB = EC.R2/(R1+R2)

Nu ta thay s mch phn cc hnh 6.6 bng s mch phn cc dng hai ngun cung cp mt chiu l UB cho mch cc gc v EC cho mch cc gp nh hnh 6.7 th in tr RB l in tr tng ng ca hai in tr R1 v R2mc song song, ta c: Mch thay th tng ng vi mch nh thin phn p

Nu xt UB v UBE khng ph thuc vo dng in IC, ta c th tnh o hm cng thc (4.31) theo IC c:

Phn c c b ng dng ph n h i
Trong s , in tr RB c gi l in tr nh thin hoc in tr hi tip. N dn mt phn in p t mch ra v mch vo phn cc cho tip xc pht TE, v in p phn cc l: UBE = UCE - IB RB .

a- S mch nh thin hi tip m in p b- Phng php hn ch hi tip thnh phn tn

hiu xoay chiu

Cc ph ng php m c transistor
Emitter chung (EC)
Trong s mch gm c cc phn t sau: +/ EE , EC - Ngun in cung cp mt chiu cho tranzito loi P-N-P. +/ RB - in tr nh thin +/ RC - in tr ti +/ T in C1 v C2 l t lin lc. Cc cu kin ny c nhim v trong mch in tng t nh s mc cc gc chung. Nh vy, tn hiu a vo gia cc gc v cc pht, tn hiu c ly ra t gia cc gp v cc pht. Do , cc pht l chn cc chung ca mch vo v mch ra v ta c s mc cc pht chung. Chiu ca cc thnh phn dng in v in p trn cc chn cc cu tranzito c m t hnh 6.9.

Trong s mc pht chung c dng vo l IB, dng ra l IC, in p vo l UBE, in p ra l UCE.

S mch cc E chung

Colector chung (CC)

S mch cc E chung

Mch chung colect c dng nh hnh 6.10, cc colect dung chung cho u vo v u ra. o in p vo, dng vo, dng ra qua xc cc c tuyn tnh c bn ca mch CC dung cc vn k v miliampe k c mc nh hnh 6.9. c tuyn vo ca mch chung colect (CC) IB= f(UCB) khi in p ra UCE khng i c dng nh hnh 2.31 n c dng khc hn so vi cc c tuyn vo ca hai cch mc EC v BC xt trc y. l v trong kiu mc mch ny in p vo UCB ph thuc rt nhiu vo in p ra UCE (khi lm vic ch khuych i in p UCB i vi tranzito silic lun gi khong 0.7V, cn tranzito Gecmani vo khong 0.3V trong khi in p UCE bin i trong khong rng ). V d trn hnh 2.31 hy xt trng hp UEC = 2V ti IB = 100mA UCB = UCE UBE = 2V 0.7 V =1,3V

Base chung (BC)

S mch mc cc gc chung m t trong hnh 4-10. Trong s mch c: + EE , EC l ngun cung cp mt chiu cho tranzito loi P-N-P trong mch. + RE - in tr nh thin cho tranzito. RE c nhim v lm st bt mt phn in p ngun EE m bo cho tip xc pht c phn cc thun vi in p phn cc UEB 0,6 V cho tranzito Silic, v UEB 0,2V cho tranzito Gecmani. ng thi tn hiu vo s h trn RE a vo tranzito. + RC - in tr gnh c nhim v to st p thnh phn dng xoay chiu ca tn hiu a ra mch sau v a in p t m ngun EC ln cc gp m bo cho tip xc gp c phn cc ngc. + T in C1 , C2 gi l t lin lc c nhim v dn tn hiu vo mch v dn tn hiu ra mch sau. S mc gc chung cho tranzito loi P-N-P

Cc gc B ca tranzito trong s c ni t. Nh vy, tn hiu a vo gia cc pht v cc gc. Tn hiu ly ra gia cc gp v cc gc nn cc gc B l chn cc chung ca mch vo v mch ra. - Ta gi l s mc cc gc chung. Trong mch c cc thnh phn dng in v in p sau: IE gi l dng in trn mch vo. IC gi l dng in trn mch ra. UEB gi l in p trn mch vo UCB gi l in p trn mch ra Mi quan h gia cc dng in v in p trn cc chn cc c m t thng qua cc h c tuyn tnh. C hai h c tuyn chnh l :

H c tuyn vo: UEB = f1(UCB, IE) H c tuyn ra: IC = f2 (UCB, IE)