LI M U

Trong thi i ngy nay in t cng sut ng mt vai tr ht sc quan trng trong i sng.Vic bin i nng lng t dng ny sang dng khc nh cc mch cng sut c ng dng rng ri.c bit nh c s pht trin ca van bn dn cng sut m lnh vc ny ngy cng pht trin mnh m.Ta c th phn loi thnh mt s dng bin i sau: ACDC (Chnh lu) ; DCAC (Nghch lu) ; ACAC(iu chnh in p xoay chiu);DCDC(iu chnh in p mt chiu).Mi nhm trn u c nhng ng dng ring ca n trong tng lnh vc c th. Vi yu cu ca n Tm hiu v thc hin mch nghch lu c lp in p mt pha t ngun mt chiu 12VDC ln 220VAC tn s 50Hz.Mch ny c ng dng nhiu trong i sng sinh hot. Mch c nhim v cung cp ngun nng lng cho ti khi xy ra s c mt in. Phn bo co ca em gm nhng phn sau: Phn 1 : Gii thiu v in t cng sut v cc van bn dn Phn 2 : Gii thiu chung v nghch lu c lp Phn 3 : Tnh ton v thit k mch thc t Trong thi gian lm n tt nghip, em xin chn thnh cm n s hng dn v ch bo tn tnh ca c Nguyn Th Thm .C gip em c c thm nhiu nhng kin thc v kinh nghim qu bu phc v cho vic hc tp cng nh cho cng vic trong tng lai. Song thi gian c hn v vn kin thc cha c rng nn trong qu trnh thit k khng th trnh khi nhng thiu st. V vy em mong nhn c s ch bo ca cc qu thy c n tt nghip ca em c hon thin hn.

CHNG 1 GII THIU V IN T CNG SUT V NGHCH LU 1.1. Khi nim v in t cng sut 1.1.1. nh ngha in t cng sut l chuyn ngnh nghin cu cc phng php v cc thit b in t c cng sut ln vi cc thut ton iu khin nhm bin i v iu khin nng lng in.

Hnh 1.1 S chung v b bin i cng sut

Hnh 1.2. i tng nghin cu ca in t cng sut

1.1.2. Phn loi v ng dng: in xoay chiu thnh in mt chiu: Cc b Chnh lu (Rectifier) iu khin (dng Thyristor) hoc khng iu khin (dng Diode) tu theo vic ta c cn iu khin gi tr ca dng in mt chiu u ra hay khng. in mt chiu thnh in xoay chiu: Cc b Nghch lu (Inverter). Cc b nghch lu c kh nng bin mt dng in mt chiu thnh mt dng in xoay chiu c gi tr in p v tn s thay i c tu vo lut ng m cc van bn dn. in mt chiu thnh in mt chiu: Cc b Bm xung mt chiu (cn c tn l iu p mt chiu, bin i in p mt chiu ( DC to DC converter, DC chopper). Cc b bin i ny bin dng in mt chiu c gi tr c nh thnh dng in mt chiu c gi tr in p, dng in iu khin c. in xoay chiu thnh in xoay chiu: Cc b Bin tn (Frequency Drive) trc tip (Cycloconverter) hoc gin tip (Inverter). Cc b bin tn c kh nng bin ngun in xoay chiu c gi tr dng in, in p v tn s c nh ca li in thnh dng in xoay chiu c gi tr dng, p v tn s iu khin c theo mun. 1.2. Cc phn t bn dn cng sut c bn 1.2.1. c tnh c bn ca cc phn t bn dn cng sut Cc phn t bn dn cng sut c s dng trong s cc b bin i nh cc kha in t, gi l cc van bn dn. Khi m dn dng th ni ti vo ngun, khi kha th ngt ti ra khi ngun, khng cho dng in chy qua. ng ct cc dng in ln th cc van bn dn li c iu khin bi cc tn hiu cng sut nh, to bi cc mch in t cng sut nh. c tnh c bn ca cc phn t bn dn cng sut : Cc van bn dn ch lm vic trong ch kha, khi m cho dng chy qua th c in tr tng ng rt nh, khi kha khng cho dng chy qua th c in tr tng ng rt ln. Nh tn hao cng sut trong qu trnh lm vic bng in tch ca dng in chy qua vi in p ri trn phn t s c gi tr rt nh Cc van bn dn ch dn dng theo mt chiu khi phn t c t di in p phn cc thun. Khi in p t ln phn t phn cc ngc, dng qua phn t ch c gi tr rt nh, c mA, gi l dng r. V kh nng iu khin, cc van bn dn c phn loi thnh: Van khng iu khin nh Diode Van c iu khin : iu khin khng hon ton, nh Thysitor, Triac iu khin hon ton, nh MOSFET, IGBT,GTO

1.1.3. Diode cng sut Diode l phn t c cu to bi mt lp tip gip bn dn P-N. Diode c 2 cc, anot A l cc ni vi lp bn dn kiu P, catot K l cc ni vi lp bn dn kiu N. Dng in ch chy qua Diode theo chiu t A n K khi in p UAK dng. Khi UAK m, dng qua iode gn nh bng khng. a) Cu to v k hiu

Hnh 1.3a. Cu to v k hiu Diode

Tip gip bn dn P-N l b phn c bn trong cu to ca mt Diode. Khi ghp 2 lp ti b mt tip xc, cc in t d tha trong bn dn N khuych tn sang vng bn dn P lp vo cc l trng, to thnh mt lp Ion trung ho v in, lp Ion ny to thnh min cch in gia hai cht bn dn. Tuy nhin vng ngho in tch ny ch m rng ra n dy nht nh v bn trong vng N khi cc in t di chuyn i s li cc Ion dng, cn bn vng P khi cc in t di chuyn n s nhp vo lp cch in t ha tr ngoi cng, to nn cc Ion m. Cc Ion ny nm trong cu trc tinh th ca mng tinh th Silic nn khng th di chuyn c. Kt qu to thnh nh mt t in vi cc in tch m lp pha di lp P v cc in tch dng pha di lp n. Cc in tch ca t in ny to nn mt in trng E c hng t vng N sang vng P ngn cn s khuch tn tip tc cac in t t vng N sang vng P.

b) c tnh Vn - Ampe

Hnh 1. 4 c tnh Vol Ampe v c tnh l tng

c tnh gm 2 phn, c tnh thun nm trong gc phn t th I tng ng vi UAK > 0, c tnh ngc nm trong gc phn t th III tng ng vi UAK < 0. Trn ng c tnh thut, nu in p A-K tng dn t 0 n khi vt qua ngng in p VF, dng c th chy quan Diode. Dng in p iD c th thay i rt ln nhng in p ri trn Diode UAK hu nh t thay i. Nh vy c tnh thun ca Diode c trng bi tnh cht c in tr tng ng nh. Trn ng c tnh ngc, nu in p UAK tng dn t 0 n gi tr Ung.max gi l in p ngc lp nht, th dng qua Diode vn c gi tr rt nh gi l dng r. Ngha l Diode cn tr dng chy qua theo chiu ngc. Cho n khi UAK t n gi tr Ung.max th xy ra hin tng dng qua Diode tng t ngt, tnh cht cn tr dng in ngc ca Diode b ph v. Qu v ny khng c o ngc ngha l nu ta li gim in p trn A-K th dng in vn khng gim. Ta ni Diode b nh thng. c tnh Vn-Ampe ca cc Diode khc nhau, tuy nhin phn tch s cc b bin i th mt c tnh l tng nh hnh trn c s dng nhiu hn c. Theo c tnh l tng, Diode c th cho php mt dng in lp bt k chy qua vi st p trn n bng 0 v chu c in p ngc ln bt k vi dng r bng 0. Ngha l, theo c tnh l tng, Diode c in tr tng ng khi dn bng 0 v khi kha bng .

c) Cc thng s Dng in thun ID : Gi tr trung bnh ca dng in cho php chy qua diode theo chiu thun ID y l gi tr la chn diode cho ng dng thc t in p ngc UNg.max: Gi tr in p ngc ln nht m diode c th chu dng c. Lun la chn: UAK < U Ng.max Dng in thun ID :Gi tr trung bnh ca dng in cho php chy qua diode theo chiu thun ID y l gi tr la chn diode cho ng dng thc t 1.1.4. Thyristor (SCR) a) Cu trc v k hiu Thysistor c ba cc : anot A, catot K, cc iu khin G Thysistor l phn t bn dn cu to t bn lp bn dn P-N-P-N to ra ba tip gip P-N: J1, J2, J3

Hnh 1.5 K hiu cu trc ca Thysistor

b) c tnh Vn Ampe

Hnh 1.6 c tnh Von-Ampe ca Thysistor

c tnh Von-Ampe ca mt Thisistor gm 2 phn. Phn th nht nm trong gc phn t I l c tnh thun tng ng vi trng hp in p UAK > 0, phn th 2 nm trong gc phn t th III, gi l c tnh ngc tng ng vi trng hp UAK < 0. Trng hp dng in vo cc iu khin bng 0 (IG = 0) Khi dng vo cc iu khin ca T bng 0 hay khi h mch cc iu khin Thisistor s cn tr dng in tng ng vi c 2 trng hp phn cc in p gia A-K. Khi in p UAK < 0, theo cu to bn dn ca Thysistor, hai tip gip J1, J3 s phn cc ngc, lp J2 phn cc thun. Nh vy Thysistor s ging nh 2 Diode mc ni tip b phn cc ngc. Qua T s ch c mt dng in rt nh chy qua, gi l dng r. Khi UAK tng t n mt gi tr in p ln nht Ung.max s xy ra hin tng T b nh thng, dng in c th tng ln rt ln. Ging nh on c tnh ngc ca Diode, qu trnh nh thng l qu trnh khng th o ngc c, ngha l nu c gim in p UAK xung di mc Ung.max th dng in cng khng gim v mc dng r. T b hng. Khi tng in p A-K theo chiu thun, UAK > 0, lc u cng ch c mt dng in rt nh chy qua, gi l dng r. in tr tng ng mch A-K vn c gi tr rt rt ln. Khi tip gip J1, J3 phn cc thun, J2 phn cc ngc. Cho n khi UAK tng t n gi tr in p thun ln nht, Uth.max s xy ra hin tng in tr tng ng mch A-K t ngt gim, dng in chy qua Thysistor s ch b gii hn bi in tr mch ngoi. Nu khi dng qua Thysistor ln hn mt mc dng ti thiu, gi l dng duy tr Idt, th khi Thysistor s dn dng trn ng c tnh thun, ging nh ng c tnh thun Diode. on c tnh thun c c trng bi tnh cht dng c th c gi tr ln nh in p ri trn A-K nh v hu nh khng ph thuc vo gi tr ca dng in. Trng hp c dng in vo cc iu khin ( IG > 0) Nu c dng in iu khin a vo gia cc iu khin v A, qu trnh chuyn im lm vic trn ng c tnh thun s xy ra sm hn, trc khi in p thut t n gi tr ln nht. Nu dng iu khin ln hn th im chuyn c tnh lm vic s xy ra vi UAK nh hn. c) iu kin m Thysistor Thysistor ch cho php dng chy qua mt chiu, t anot n catot, v cn tr dng chy theo chiu ngc li. Tuy nhin, Thysistor c th dn dng, ngoi iu kin phi c in p UAK > 0 cn cn thm mt s iu kin khc. Khi a mt xung dng in c gi tr nht nh va gia cc iu khin v catot. Xung dng in iu khin s chuyn trng thi ca Thysistor t tr khng cao tr khng thp mc in p A-K nh. Khi nu dng qua A-K ln hn mt gi tr nht nh, gi l dng duy tr (idt) th Thysistor s tip tc trong trng thi m dn dng m khng cn n s tn ti ca xung dng iu khin. iu ny ngha l c th iu khin m cc Thysistor bng cc xung dng c rng xung nht nh, do cng sut ca mch iu khin c th l rt nh, so 7

vi cng sut mch lc m Thysistor l mt phn t ng ct, khng ch dng in. d) iu kin kha Thysistor Mt Thysistor ang dn dng s tr v trng thi kha ( in tr tng ng mch anot-catot tng cao) nu dng in gim xung, nh hn gi tr dng duy tr, Idt. Tuy nhin Thysistor vn trng thi kha, vi tr khng cao, khi in p anot-catot li dng, (UAK > 0), cn phi c mt thi gian nht nh cc lp tip gip phc hi hon ton tnh cht cn tr dng in ca mnh. e) Cc thng s Gi tr trung bnh cho php chy qua Thysistor, IV y l gi tr dng trung bnh cho php chy qua Thysistor vi iu kin nhit ca cu trc tinh th bn dn Thysistor khng vt qu mt gi tr cho php Lm mt t nhin: Dng s dng cho php: I = 1/3 IV Lm mt cng bc bng qut gi: Dng s dng cho php: I = 2/3 IV Lm mt cng bc bng nc : Dng s dng cho php: I = IV in p ngc ln nht: L gi tr in p ngc ln nht cho php t ln Thysistor. Trong ng dng phi m bo rng, ti bt k thi im no in p gia anot-catot UAK lun nh hn hoc bng Ung.max. Thi gian phc hi tnh cht kha ca Thysistor, tr y l thi gian ti thiu t in p m ln gia anot-catot ca Thysistor khi dng A-K v bng 0 trc khi c th c in p dng m Thysistor vn kha. Tc tng in p cho php Vi T tn s thp dU/dt = 50 n 200 V/ micro giy Vi T tn s cao dU/dt = 500 n 2000 V/ micro giy tng dng cho php dI/ dt ( A/ micro giy) Vi T tn s thp dI/dt = 50 n 200 A/ micro giy Vi T tn s cao dI/dt = 500 n 2000 A/ micro giy

1.1.5. GTO ( Gate Turn-off Thysistor) GTO kha li c bng cc iu khin, c kh nng v ng ct cc dng in rt ln, chu c in p cao ging nh Thysistor , l mt van iu khin hon ton, c th ch ng c thi im kha di tc ng ca iu khin. a) Cu trc v k hiu
A (Anode) p
+

n+ n

p+

n+

p+ J1

n+ G (Gate)

p n+

J2 n+ G J3 a)

V K b)

K (Cathode)

Hnh 1.7. Cu trc k hiu GTO

Trong cu trc bn dn ca GTO lp p, anot c b sung cc lp n+. Du (+) bn cnh ch ra rng mt cc in tch tng ng, cc l hoc in t, c lm giu thm vi mc ch lm gim in tr khi dn ca cc vng ny. Cc iu khin vn c ni vo lp p th ba nhng c chia nh ra v phn b u so vi lp n+ ca catot b) Nguyn l iu khin GTO GTO c iu khin m bng cch cho dng vo cc iu khin, ging nh Thyristor thng. kho GTO, mt xung dng phi c ly ra t cc iu khin.

IG A V t IGmax M a) Kha b) G K

Hnh 1.8. Nguyn l iu khin GTO a.Yu cu dng xung iu khin b.Nguyn l thc hin

kha GTO, mt xung dng phi c ly ra t cc iu khin. Khi van ang dn dng, tip gip J2 ch mt lng ln cc in tch sinh ra do tc ng ca hiu ng bn ph v bo to nn vng dn in, cho php cc in t di chuyn t catot, vng n+ , n anot, cng p+ , to nn dng anot. Bng cch ly i mt s lng ln cc in tch qua cc iu khin, vng dn in s b co hp v b p v pha vng n+ ca anot v vng n+ ca catot. Kt qu l dng anot s b gim cho n khi v n 0. Dng iu khin c duy tr mt thi gian ngn GTO phc hi tnh cht kha. 9

Xung dng kha phi GTO phi c bin rt ln. Vo khong 20-25% bin dng anot-catot. Mt yu cu quan trng na l xung dng iu khin phi c dc sn rt ln, sau khong 0,5 n 1s. iu ny gii thch ti sao nguyn l thc hin to xung dng kha l ni mch cc iu khin vo mt ngun p. V nguyn tc, ngun p c ni tr bng 0 v c th cng cp mt dng in v cng ln. Mch iu khin GTO dng 2 kha Transitor T1, T2. Khi tn hiu iu khin l 15V, T1 m, dng chy t ngun 15V qua in tr hn ch R1 np in cho t C1 to nn dng chy vo cc iu khin ca GTO. Khi t C1 np y in p ca Diode n p DZ (12V) dng iu khin kt thc. Khi tn hiu iu khin ri xung mc 0V th T1 b kha, T2 s m do c in p trn t C1, t C1 b ngn mch qua cc iu khin v catot, Transistor T2 to nn dng i ra khi cc iu khin, kha GTO li. Diode DZ ngn ko cho t np ngc li. Transistor T2 phi chn l loi chu c xung dng c bin ln chy qua. 1.1.6. Transistor cng sut, BJT ( Bipolar Junction Transistor) a) Cu to Transistor l phn t bn dn c cu trc bn dn gm 3 lp bn dn p-n-p (bng thun) hoc n-p-n (bng ngc), to nn hai tip gip p-n c biu din trn hnh 1.2.5

(Base) B

E (Emitter)

n-

a)

b. Hnh 1.9.a..Cu trc bn dn BJT b.k hiu

10

Cu trc ny thng c gi l Bipolar Junction Transistor v dng in chy trong cu trc ny bao gm c 2 loi in tch m v dng. Transistor c ba cc : Bazer (B), colecter (C), emiter (E). BJT thng l loi bng ngc. Transistor ch c s dng nh mt phn t kha. Khi m dng iu khin phi tha mn iu kin : IB > hay IB = kbh Trong kbh = 1,2 1,5 gi l h s bo ha. Khi Trasistor s trong ch bo ha vi in p gia conlecto v emito rt nh, c 1 1,5V, gi l in p bo ha, U CE.bh. Khi kha, dng iu khin IB bng 0, lc dng colecto gn bng 0, in p UCE s ln n gi tr in p ngun cung cp cho mch ti ni tip vi transistor b) c tnh ng ct ca Transistor Ch ng ct ca Transistor ph thuc ch yu vo cc t k sinh gia tip gip B-E, B-C, CBE v CBC

Hnh 1.10 c tnh ng ct ca Transitor

Qu trnh m : Theo th, trong khong thi gian (1), BJT ang trong ch kha vi in p ngc, -UB2 t ln tip gip B-E. Qu trnh m BJT bt u khi tn hiu iu khin nhy t -UB2 ln mc UB1. Trong khong (2), t u vo, gi tr tng ng bng Cin=CBE + CBC, np in t in p UB2 n UB1. Khi UBE cn nh hn 0, cha c hin tng g xy ra i vi IC v UCE. T Cin ch np n gi tr ngng m U* ca tip gip B-E, c 0,6-0,7V, bng in p ri trn BJT ch bt u thay i khi UBE vt qu gi tr 0 u giai on (3). Khong thi gian (2) gi l thi gian tr m Id(on) ca BJT. Trong khong (3), cc in t xut pht t emito thm nhp vo vng bazo, vt qua tip gip B-C lm xut hin dng colecto. Cc in t thot ra khi colecto cng lm tng thm cc in t n emito. Qu trnh tng dng IC, 11

IE tip tc xy ra cho n khi trong bazo tch ly lng in tch d tha m tc t trung ha ca chng m bo mt dng bazo khng i : Ti im cng dng in ti bazo trn s tao c: IB1=iC.BE+IC.BC+iB Trong iC.BE l dng np ca t CBE, iC.BC l dng np ca t CBC, iB l dng u vo ca Transistor, iC=.iB Dng colecto tng dn theo quy lut hm m, n gi tr cui cng l IC ()=.IB1. Tuy nhin ch n cui giai on (3)th dng IC t n gi tr bo ha, IC.bh, BJT ra khi ch tuyn tnh v iu kin iC=.iB khng cn tc dng na. Trong ch bo ha c hai tip gip B-E v B-C u c phn cc thun. V kha lm vic vi ti tr trn colecto nn in p trn colecto-emito VCE cng gim theo cng tc vi s tng ca dng IC. Khong thi gian (3) phc thuc v ln ca dng IB1, dng ny cng ln th thi gian ny cng ngn. Trong khong thi gian (4), ui in p UCE tip tc gim n gi tr in p bo ha cui cng, xc nh bi biu thc: UCE=Un IC.bh.R1 Thi gian (4) ph thuc qu trnh suy gim in tr ca vng n- v ph thuc cu to ca BJT. Trong giai on (5). BJT hon ton lm vic trong ch bo ha. Qu trnh kha BJT: Trong thi gian BJT ch bo ha, in tch t khng ch trong lp bazo m c trong lp conlecto. Tuy nhin nhng bin i bn ngoi hu nh khng nh hng n ch lm vic ca kha. Khi in p iu khin thayd di t UB1 xung UB2 u giai on (6). in tch tch ly trong cc lp bn dn khng th thay i ngay lp tc c. Dng IB ngay lp tc s c gi tr : Lc u cc in tch c di chuyn ra ngoi bng dng khng i IB2. Giai on di chuyn kt thc cui giai on (6) khi mt in tch trong tip gip bazo-conlecto gim v bng 0 v tip theo tip gip ny bt u b phn cc ngc. Khong thi gian (6) gi l thi gian tr khi kha, t d(off) . Trong khong thi gian (7) dng colecto IC bt u gim v bng 0, in p UCE s tng dn ti gi tr +Un. Trong khong thi gian ny BJT lm vic trong ch tuyn tnh, trong dng IC t l vi dng bazo. T CBC lm vic trong ch tuyn tnh, trong dng IC t l vi dng bazo. T CBC bt u np ti gi tr in p ngc bng Un. Lu rng trong giai a ny, ti im cng dng in p trn bazo trn s ta c: IB2=iC.BC-iB Trong iC.BC l dng np ca t CBC; iB l dng u vo ca trazito. T c th thy quy lut iC=.iB vn thc hin. Tip gip B-E vn c phn cc thun, tip gip B-C b phn cc ngc. n cui khong (7) tranzito mi kha 12

li hon ton. Trong khong (8), t bazo-emito tip tc np ti in p ngc UB2. Tranzito ch kha hon ton trong khong (9). c) c tnh tnh ca BJT v cch mc s Darlington T c tnh tnh trn thy rng h s khuch i dng in ca cc tran. cng sut nh ch khong hng chc. Do cn mc hai tran. ni tip nhau nh hnh v

Hnh 1.11. S Darlington

S Darlington l cch ni hau trazito Q1, Q2 vi h s khuch i dng tng ng 1, 2, c h s khuch i chung bng :=1+2+3+4. 1.1.7. Trasisto trng, MOSFET a) Cu to v nguyn l hot ng ca MOSFET MOSFET c cu trc bn dn cho php iu khin bng in p vi dng in iu khin cc nh, hnh 1.2.6a th hin cu trc bn dn v k hiu ca mt MOSFET knh dn kiu n. Trong G (Gate) l cc iu khin c cch ly hon ton vi cu trc bn dn cn li bi lp in mi cc mng nhng c cch in cc ln doxit-silic (Sio2). Hai cc cn li l cc gc S (Source) v cc mng D (Drain). Trn k hiu phn t, phn chm gch gia D v S ch ra rng trong iu kin bnh thng khng c mt knh dn thc s ni gia D vi S
Cc u khi i n (G Gate) Cc gc (S S ource) D n p nn n n p G n

a)

Cc m ng (D Drain)

b)

Hnh 1.12 a.Cu trc b.k hiu ca MOSFET

S hnh thnh knh dn trong cu trc MOSFET 13

Hnh 1.13. S hnh thnh knh dn trong cu trc MOSFET

Trong ch lm vic bnh thng uDS > 0. Gi s in p gia cc iu khin v cc gc bng khng, uDS=0, khi knh dn s hon ton khng xut hin. Gia cc gc v cc mng s l tip gip p-n- phn cc ngc. in p uDS s l hon ton ri trn vng ngho in tch ca tip gip ny. Khi in p iu khin m, UGS < 0, th vng b mt gip cc iu khin s tch t cc l (p), do dng in gia cc gc v cc mng s khng th xut hin. Khi in p iu khin l dng, UGS>0, v ln, b mt tip xc cc iu khin s tch t cc in t, v mt knh dn thc s hnh thnh. T cu trc bn dn ca MOSFET, c th thy rng gia cc mng v cc gc tn ti mt tip gip p-n-, tng ng vi mt Diode ngc ni gia D-S. b) c tnh tnh ca MOSFET Khi in p iu khin UGS nh hn mt ngng no , c 3V, MOSFET trng thi kha vi in tr rt ln gia cc mng D v cc gc S. Khi UGS c 5-7V, MOSFET s trong ch dn. Thng thng ngi ta iu khin MOSFET bngin p iu khin c 15 V lm gim in p ri trn D vs S. Khi UDS s gn nh t l ci dng ID.
ID(A) 10A UDS=200V UDS=10V UDS=2V

Dn dng 5A UDS=1V UDS=0,5V

0 5V 10V UGS

Hnh 1.14 c tnh tnh ca MOSFET

c) c tnh ng ct ca MOSFET Do l mt phn t vi cc ht mang in c bn, MOSFET c th ng ct vi tn s rt cao. Tuy nhin t c thi gian ng ct rt ngn th vn 14

 iu khin l rt quan trng. C ch nh hng n thi gian ng ct ca MOSFET l cc t in k sinh gia cc cc.
Cc iu khin G (Gate)

BJT k sinh n+ p

Cgs Cgd n p Vng ngho in tch it trong n+ Cc mng D (Drain)

+

D CGD RGint CGS

Cds n-

RDS(on)

CDS

b) Hnh 1.15 M hnh mt kha MOSFET a) Cc thnh phn t k sinh gia cc lp bn dn MOSFET b) Mch in tng ng

a)

T in gia cc iu khin v cc gc CGS phi c np n in p c th xut hin. T gia cc iu khin v cc mng CGD c nh hng mnh n gii hn tc ca MOSFET.

Hnh 1.16. S ph thuc ca t in CGD vo in p UDS

Qu trnh m mt MOSFET

15

Hnh 1.17. Qu trnh m mt MOSFET a) S ; b) th dng dng in, in p

Ti cm trong s th hin bng ngun dng ni song song ngc vi diot di in p mt chiu UDD. MOSFET c iu khin bi u ra ca vi mch DRIVER di ngun nui UCC ni tip qua in tr Rgext. Cc iu khin c in tr Rgint. Khi c xung dng u vo ca DRIVER, u ra ca n s c xung vi bin UP a n in tr RGgext. Nh vy UGS s tng vi hng s thi gian xc nh bi T1=(Rdt+ Rgext+Rgint).(CGS+CGDI), trong t CGD ang mc thp, CGDI do in p UDS ang mc cao. Theo th, trong khong thi gian t 9 n t1, t (CGS+CDSI) c np theo quy lut hm m ti gi tr ngng UGS(th). Trong khong ny c in p UDS ln dng ID u cha thay i. td(on)=t1 gi l thi gian tr khi m. Bt u t thi im t1 khi UGS vt qua gi tr ngng, dng cc mng ID bt u tng, tuy nhin in p UDS vn gi nguyn gi tr in p ngun UDD. Trong khong thi gian t1 n t2, dng Id tng tuyn tnh rt nhanh, t dn gi tr dng ti. T t2 tr i, khi UGS t n mc, gi l mc Miller in p,UDS bt u gim rt nhanh. Trong khng t t2 n t4, in o UGS b gm mc Miller, do dng IG cng c gi tr khng i. Khong ny gi l khong Miller. Trong khong thi gian ny, dng iu khin l dng phng cho t CGD gim nhanh in p gia cc mng vs cc gc UDS. Sau thi im t4, UGS li tng tip tc vi hng s thi gian T2+(Rdr+Rgext+Rgin).(CGS+CGDh) v lc ny t CGDh tng n gi tr cao CGDh. UGS s tng n gi tr cui cng, xc nh gi tr thp nht ca in p gia cc gc v cc mng, UDS+ IDS.RDS(on).

Qu trnh kha MOSFET 16

Hnh 1.18.a Qu trnh kha MOSFET

Dng sng ca qu trnh kha th hin nh hnh trn. Khi u ra ca mch iu khin Driver xung n mc khng UGS bt u gim theo hm m vi hng s thi gian T2=(Rdr+Rgext+Rgind).(CGS+CGDh) t 0 n t1. Tuy nhin sau thi im t3 th hng s thi gian li l T1+ (Rdr+Rgext+Tgint).(CGS+CGDI). T im 0 n t1 l thi gian tr khi kha Id(off), dng iu khin phng in cho t cui cng ti t3, trong dng Id vn gi nguyn mc c. Khong thi gian t t2 n t3 tng ng vi mc Miller, dng iu khin vi in p trn cc iu khin gi nguyn gi tr khng i. Sau thi im t3 dng ID bt u gim v n 0 thi im t4. T t4 MOSFET b kha hn. a) Cc thng s th hin kh nng ng ct ca MOSFET Cc thng s k thut ca MOSFET thng c cho di dng cc tr s t CIS, CRSS, COS di nhng iu kin nht nh nh in p UDS, UGS. C th tnh ra cc t k sinh nh sau: CGS=CRSS CGSS=CISS CRSS CDSS=COSS CRSS Cng sut mch iu khin : Piu khin=UCC.Qg.fsw Trong fsw l tn s ng ct ca MOSFET. Tn hao cng sut do qu trnh ng ct trn MOSFET: Psw= .UDS.IDS.TD.fsw.(ton+toff) Trong ton, toff l thi gian m v kha ca MOSFET, tng ng l cc khong thi gian t t1 n t4 trn th dng sng ca cc qu trnh m, kha. 17

1.1.8. Transisto c cc iu khin cch ly IGBT a) Cu to v nguyn l hot ng

Hnh 1.19 IGBT

IGBT l phn t kt hp kh nng ng ct nhanh ca MOSFET v kh nng chu ti ln ca Transisto thng. IGBT c iu khin bng in p, c cng sut iu khin yu cu cc nh. V cu trc bn dn, IGBT rt ging vi MOSFET, im khc nhau l c thm lp p ni vi colecto to nn cu trc bn dn p-n p gia emito (tng t cc gc) vi colecto (tng t cc mng), khng phi l n-n nh MOSFET. C th coi IGBT tng ng vi mt Transisto p-n-p vi dng c iu khin bi MOSFET. b) c tnh ng ct ca IGBT

Hnh 1.20. S th nghim mt kha IGBT

Trn hnh th hin cu trc tng ng ca IGBT vi mt MOSFET v mt p-n-p Transisto. K hiu dng qua MOSFET, i2 l dng qua transisto. Phn MOSFET, i2 l dng qua trasisto. Phn MOSFET trong IGBT c th kha li nhanh chng nu x ht c in tch gia G v E, do dng y s bng 0. Tuy nhin thnh phn dng i2 s khng th suy gim nhanh c do lng in tch tch ly trong lp n- (tng ng vi bazo ca cu trc p-n-p) ch c th xut hin vng dng in b ko di khi kha mt IGBT. Trn s IGBT ng ct mt ti cm c diode khng D0 mc song song. OGBT c iu khin bi 18

ngun tn hiu vi bin UG ni vi cc iu khin G qua in tr RG. Trn s Cgs, Cge th hin cc t k sinh gia cc iu khin v colecto, emito. Qu trnh m IGBT

Hnh 1.21. Qu trnh m IGBT

Qu trnh m IGBT din ra rt ging vi qu trnh ny MOSFET khi in p iu khin u vo tng t khng n gi tr UG. Trong thi gian trn khi m Id(on) tn hiu iu khin np in cho t Cgc lm in p gia cc iu khin v emito tng theo quy lut hm m, t ko n gi tr ngng UGE(th) (khong 3 n 5 V), ch bt u t MOSFET trong cu trc ca IGBT mi bt u m ra. Dng in gia colecto emito tng theo quy lut tuyn tnh t 0 n dng ti I0 trong thi gian tr. Trong thi gian tr in p gia cc iu khin v emito tng n gi tr UGE.I0 xc inh gi tr dng I0 qua colecto. Do Diode D0 cn ang dn dng ti I0 nn in p UCE vn b gm ln mc in p ngun mt chiu Udc. Tip theo qu trnh m din ra theo 2 giai on, ttv1 v ttv2. Trong sut 2 giai on ny in p gia cc iu khin gi nguyn mc UGE.I0 (mc Miller, duy tr dng I0, do dng iu khin hon ton l dng phng ca t Cgc.IGBT vn lm vic trong ch tuyn tnh. Trong giai on u din ra qu trnh kha v phc hi ca Diode D0, dng phc hi ca Diode D0 to nn xung dng trn mc dng I0 ca OGBT. in p UCE bt u gim. IGBT chuyn im lm vic qua vng ch tuyn tnh sang vng bo ha. Giai on 2 tip din qu 19

trnh gim in tr trong vng thun tr ca colecto emito v gi tr Ron khi kha bo ha hon ton, UCE.on=I0Ron. Sau thi gian m ton, khi t Cgc phng in xong, in p gia cc iu khin v emito tip tc tng theo quy lut hm m, vi hng s thi gian bng CgcRG n gi tr cui cng UG. Tn hao lng lng khi m c tnh gn ng bng : Qon= Qu trnh kha Hnh 1.2.7.4 th hin dng in p, dng in ca qu trnh kha ca IGBT. Qu trnh kha bt u khi in p iu khin gim t UG xung UG. Trong thi gian tr khi kha td(off) ch c t u vo Cge phng in qua dng iu khin u vo vi hng s thi gian bng CgcRG ti mc in p Miller. Bt u t mc Miller in p gia cc iu khin v emito b gi khng i do in p Uce bt u tng ln v do t Cge bt u c np in. Dng iu khin by gi s hon ton l dng np cho t Cge nn in p UGF c gi khng i. in p Uce tng t gi tr bo ha Uce.on ti gi tr in p ngun Udc sau khong thi gian trV. T cui khong IrV Diode bt u m ra cho dng ti I0 ngn mch qua, do dng colecto bt u gim, Qu trnh gim din ra theo hai giai on tti1 v tti2. Trong gian on u, thnh phn dng i1 ca MOSFET trong cu trc bn dn IGBT suy gim nhanh chng v khng. in p Ugc ra khi mc Miller v gim v mc in p iu khin u vo UG vi hng s thi gian RG(Cge+Cgc). cui khong tti1, Ugc t mc ngng kha ca MOSFET, UGE(th), tng ng vi vic MOSFET b kha hon ton. Trong giai on hai, thnh phn dng i2 ca transisto p-n-p bt u suy gim. Qu trnh gim dng ny c th ko r di v cc intch trong lp n- ch b mt i do qu trnh t trung ha in tch ti ch. l vn ui dng in ni n trn. Tn hao nng lng trong qu trnh kha c th tnh gn ng bng: Qoff= Lp n- trong cu trc bn dn ca IGBT gip gim in p ri khi dn, v khi s lng cc in tch thiu s (cc l) tch t trong lp ny lm gim in tr ng k. Tuy nhin cc in tch tch t ny li ko c cch g di chuyn ra ngoi mt cch ch ng c, lm tng thi gian kha ca phn t. y cng ngh ch to bt buc phi tha hip. So vi MOSFET, IGBT c thi gian m tng ng nhng thi gian kha di hn c 1 n 5 s.

20

Hnh 1.22 Qu trnh kha ca IGBT

Thi gian kha ca IGBT c th rt ngn nu thm vo mt lp m N+ nh trong cu trc Punch Throung IGBT nh hnh:

Hnh 1.2.7.5Cu trc bn dn ca mt IGBT cc nhanh

Cu trc ny c mt Thisisto k sinh to t ba tip gip bn dn p-n, J1,J2,J3. Trong cu trc ny mt cc in tch dng, cc l, suy gim mnh theo hng t cc lp p+ n n- n n+, iu ny gip qu trnh t trung ha cc in

21

tch dng trong lp n- xy ra nhanh hn. Cng ngh ny to ra cc IGBT cc nhanh vi thi gian kh nh hn 2 s. Vng lm vic an ton, SOA (Safe Operating Area)

Hnh 1.23 Vng lm vic an ton, SOA

Vng lm vic an ton ca cc phn t bn dn cng sut, SOA, c th hin di dng th quan h gia gi tr in p v dng in ln nht m phn t c th hot ng c trong mi ch , khi dn khi kha cng nh trong qu trnh ng ct.

Hnh 1.24. Vng lm vic an ton ca IGBT

Khi in p t ln cc iu khin dng c dng hnh ch nht vi hn ch gc pha trn, bn phi, tng ng vi ch dng in v in p ln. iu ny ngha l khi chu k ng ct cng ngn, ng vi tn s lm vic cng cao, th kh nng ng ct cng sut cng phi c suy gim khi t in p iu khin m lc cc iu khin v emito li b gii hn vng cng sut ln do tc tng in p trn colecto-emito khi IGBT kha li. l v khi tc tng in p qu ln s dn n xut hin dng in ln a vo vng p ca cc iu khin, tc dng ging nh dng iu khin lm IGBT m tr li nh tc 22

dng i vi cu trc ca tiristo. Tuy nhin kh nng chu c t tng p IGBT ln hn nhiu so vi cc phn t bn dn cng sut khc. Gi tr ln nht ca dng colecto ICM c hn sao cho trnh c hin tng cht gi dng, khng kha li c ging nh thysisto. Hn na, in p iu khin ln nht UGE cng phi c chn c th gii hn c dng in ICE trong gii hn ln nht cho php ny trong iu kin s c ngn mch, bng cch chuyn bt buc t ch bo ha sang ch tuyn tnh. Khi dng ICE c gii hn khng i, khng ph thuc v in p UCE lc . Tip theo IGBT phi c kha li trong iu kin , cng nhanh cng tt trnh pht nhit qu mnh lit. Trnh c hin tng cht gi dng bng cch lin tc theo di dng colecto l iu cn phi lm khi thit k iu khin IGBT. c) Yu cu i vi tn hiu iu khin IGBT IGBT l phn t iu khin bng in p, gin nh MOSFET, nn yu cu in p c mt lin tc trn cc iu khin v emito xc nh ch kha, m. Mch iu khin cho IGBT c yu cu ti thiu nh c biu din qua s :

Hnh 1.25. Yu cu i vi tn hiu iu khin

Tn hiu m c bin UGE, tn hiu kha c bin -UGE cung cp cho mch G-E qua in tr RG. Mch G-E c bo v b Diode n p mc khong +/-18 V.

CHNG 2 23

GII THIU CHUNG V NGHCH LU C LP 2.1. Cc khi nim c bn 2.1.1. Khi nim Nghch lu c lp l thit b bin i dng in mt chiu thnh dng in xoay chiu c tn s ra c th thay i c v lm vic vi ph ti c lp. Ngun mt chiu thng thng l in p chnh lu, acquy v cc ngun mt chiu c lp khc. Nghch lu ng lp c s dng rng ri trong cc lnh vc nh cung cp in (t cc ngun c lp nh Acquy), cc h truyn ng xoay chiu, giao thng, truyn ti in nng, luyn kim 2.1.2. Sc khc nhau gia nghch lu c lp v nghch lu ph thuc. a) Nghc lu ph thuc tuy cng bin i nng lng mt chiu (DC) thnh nng lng xoay chiu (AC), nhng tn s in p v dng in xoay chiu chnh l tn s khng th thay i ca li in. Hn na s hot ng ca nghch lu ny phi ph thuc vo in p li v tham s iu chnh duy nht l gc iu khin c xc nh theo tn s v pha ca li in xoay chiu . b) Nghch lu c lp hot ng vi tn s ra do mch iu khin quyt nh v c th thay i ty , tc l c lp vi li in. 2.1.3. Phn loi nghch lu c lp a) Nghch lu in p, cho php bin i t in p mt chiu E thnh ngun in p xoay chiu c tnh cht nh in p li: - Nghch lu in p 1 pha - Nghch lu in p 3 pha b) Nghch lu dng in, cho php bin i ngun dng mt chiu thnh ngun dng in xoay chiu : - Nghch lu dng 1 pha - Nghch lu p 3 pha 2.2. Nghch lu c lp in p 2.2.1. Nghch lu c lp in p 1 pha a) Cu to v nguyn l S gm bn van ng lc ch yu: T1, T2, T3, T4 v cc diode D1, D2, D3, D4 dng tr cng sut phn khng ca ti v li, trnh c hin tng qu p khi xut hin nng lng ngc t ti. T Co c mc song song m bo cho ngun u vo l hai chiu. Nh vy Co c hai nhim v: Tip nhn cng sut khng ca ti v m bo cho ngun u vo l ngun p (Co cng ln, ni tr ngun cng nh, in p u vo cng c san phng).

24

Hnh 2.1 S nguyn l nghch lu c lp 1 pha

Nguyn l lm vic na chu k u t 0 n t2 cp T1, T2 dn in, ph ti nhn in p bng chnh sc in ng (S) ngun Ut = E. Ti t = t2, T1 v T2 kho, T3 v T4 dn, ti c cp ngun theo chiu ngc li, in p trn ti U = - E ( o chiu). Do ti mang tnh cht cm khng nn dng vn gi nguyn hng c, vi T1, T2 kho nn dng khp mch qua D3, D4. S cm ng trn ti tr thnh ngun nn thng qua D3, D4 cp v t Co ( ng mu xanh). Tng t khi kho T3, T4 dng s khp qua mch D1, D2. th in p ti U1, dng ti i1, dng qua diode iD v dng qua tiristo c biu din trn hnh 2.1.1.2.

Hnh 2.2. th nghch lu p cu mt pha

b) Phng php sng iu ha c bn 25

in p trn ti khi tnh gn ng :

Dng qua ti:

Dng trung bnh qua van ng lc:

Dng trung bnh qua diode:

Gi tr t Co:

Trong

Gi tr ca t C : C= UC l bin thin in p ngun mt chiu c tnh theo n v (%):

26

2.2.2. Nghch lu c lp in p ba pha a) Cu to

Hnh 2.3 S nghch lu p ba pha

b) Nguyn l hot ng S nghch lu (hnh 2.2.2.1) c ghp t ba s mt pha c im trung tnh.

Hnh 2.4. Lut iu khin v in p trn ti

27

 n gin ha vic nghin cu ta gi thit: Cc van dn l l tng, khi ng m ngun c ni tr nh v cng, dn in theo hai chiu. T1...T6 lm vic vi dn in = 180o Cc tng tr Za = Zb = Zc Cc diode D1 D6 lm chc nng tr nng lng v ngun T C to ngun p, tip nhn nng lng khng t ti. m bo to ra in p ba pha i xng, lut dn in ca cc van phi tun theo cc th nh cc hnh. Nh vy: T1 v T4 phi dn lch nhau 180o to ra pha A, T3 v T6 phi dn lch nhau 180o to ra pha B, T5 v T2phi dn lch nhau 180o to ra pha C, Cc pha lch nhau 120o Trong khong 0 - t1: T1, T6, T5 dn s thay th nh hnh v, in p pha A nhn c: UZA = E/3

Trong khong t1 - t2: T1, T2, T6 dn s thay th nh hnh v, in p pha A nhn c: UZA = 2E/3

Trong khong t2 - t3: T1, T2, T3 dn s thay th nh hnh v, in p pha A nhn c: UZA = E/3

Gi tr hiu dng in p pha : in p tc thi:

28

) T C:

2.3. Nghch lu dng 2.3.1. Nghch lu dng mt pha a) Cu to

Hnh 2.5. S nghch lu dng 1pha

b) Nguyn l hot ng Xt s cu: Cc tn hiu iu khin c vo tng i thysistor T1, T2, T3, T4 th lch pha vi tn hiu iu khin a vo i T3 T4 mt gc 180o in cm u vo ca nghch lu ln (Ld=), do dng in u vo c san phng (hnh 4.3) ngun cp cho nghch lu l ngun dng v dng ng in ca nghch lu (iN) c dng xung vung. Khi a xung vo m cp van T1, T2, dng in IN=id=Id. ng thi dng qua t C tng ln t bin, t C bt u c np in vi u + bn tri v du - bn phi. Khi t C np y, dng qua t gim v khng. Do iN=iC+iZ=id= hng s, nn lc u dng qua tait nh v sau dng qua ti tng ln. Sau mt na chu k (t=1) ngi ta a xung vo m cp van T3,T4, tng ln. Sau mt na chu k (t=t1) ngi ta a xung vo m cp van T3, T4, Cp T3, T4 m to ra qu trnh phng in ca t C t cc + v cc . Dng phng ngc chiu vi dng qua T1 v T2 s lm cho T1 v T2 b kha li. Qu trnh chuyn mch ny xy ra gn nh tc thi. Sau t C s c np in theo chiu ngc li vi cc cc tnh + bn phi v cc tnh - bn tri. Dng nghch lu iN=id=Id nhng i du. n thi im t=t2, ngi ta a xung vo m T1, T2 th T3, T4 s b kha li vo qu trnh c lp li nh trc. Nh vy 29

chc nng c bn ca t C l lm nhim v chuyn mch cho cc Thysistor. thi im t1, khi m T3,T4 thysistor T1 v T2 s b kha li bi in p ngc cuat t C t ln. Khong thi gian duy tr in p ngc t1-t1 l cn thit duy tr qu trnh kha v phc hi tnh cht iu khin ca van v t1-t1=tktoff; toff l thi gian kha ca thysistor hay chnh l thi gian phc hi tnh cht iu khin. .tk= 2.3.2. Nghich lu dng ba pha a) Cu to, nguyn l hot ng

a)

b)
Hnh 2.6 Nghch lu dng ba pha (a) v biu xung (b)

Cng ging nh nghch lu dng mt pha, nghch lu dng 3 pha s dng cc Thisistor. kha c cc Thysistor cn phi c t chuyn mch (C1, C2, C3). Ld= Qua th, ta thy mi van ng lc ch dn trong khong thi gian

30

 = 120o. Qu trnh chuyn mch bao gi cng din ra i vi cc van trong cng mt lc. Xt khong thi gian 0-t1: Lc ny T1 v T6 dn. Dng in s qua T1, ZA, ZB v T6. Khi t C1 c np y th dng qua t bng khng. T C1 c np vi du in p (nh hnh v) chun b cho qu trnh chuyn mch kha T1. Ti thi im t=t2, khi m T3, in p ngc ca t C1 t trn T1 lm cho T1 b kha li. Tng t nh vy khi T2 vs T3 dn (t2-t3) th t C3, c np vi du hiu in p chun b kha T3,..

31

CHNG 3 : TNH TON V THT K BOARD MCH 3.1. Tnh ton v thit k mch ng lc 3.1.1. Tnh ton my bin p Yu cu bin p: in p u vo 12V in p u ra 220V, f=50Hz Cng sut 300W

Hnh 3.1. Bin p nghch lu

Do my bin p im gia nn in p U1 = 2.U11 = 2.12 =24 (V) Cng sut ca my bin p: P= .U2.I2 = 300 (W) Trong : P l cng sut my bin p U2 l in p ca cun th cp my bin p I2 l dng in ca cun th cp my bin p l hiu sut my bin p Chn l hiu sut my bin p = 0,85 Vy ta c dng in th cp ca my bin p: P dng t s my bin p p dng t s bin p im gia nn in p s cp c tnh bng U1 = 24 (V) Vy ta chn my bin p c cng sut P = U1.I1 = 24.14,6 = 350VA vi I = 2 A 3.1.2. La chn phn t lm van chuyn mch Ta la chn MOSFET v c nhng u im sau: + Tc chuyn mch cao v tn hao chuyn mch thp + Lm vic vi in p cao + Mch bin i s dng MOSFET iu khin n gin Dng lm vic qua van bng dng lm vic qua cun dy s cp my bin p I = 14,6 A (Ta chn phng thc lm mt bng tn nhit) Vy chn MOSFET c dng lm vic l : ip ngc t ln van : Ungmax = Kdc.12 = 24 V 32

Kdc thng c chn ln hn 1,6 Vy chn van c in p lm vic > 24V T cc iu khin trn ta chn van : IRFZ44N vi cc thng s sau:

33

34

 Tnh ton tn nhit Theo datasheet ca hang ch to IRFZ44V ta bit nhit Tjmax= 175oC, RJC = 0,63 (oC/W). Vi gi thit nhit mi trng lm vic ti a l 40oC. Nh vy nhit trn cnh tn nhit c xc nh l Tr = Tj RJC. P Trong theo datasheet IRFZ44V c P = 94W Tr = Tj RJV. P = 175 0,63.94 = 115,8oC o chnh lch nhit so vi mi trng l : C Din tch b mt tn nhit : m2 Tnh ton chn cu ch Mch in c tnh ton vi dng lm vic ti a bn mch th cp MBA l 2A. trnh hin tng lm vic qu ti hay ngn mch gy s c ph hng thit b ta nn chn thit b bo v l cu ch ct nhanh, vi dng in lm vic c xc nh ICC = K.I = 1,5.2 = 3A Vy chn cu ch c dng in lm vic 3A, in o 250V loi ct nhanh. 3.1.4. Lc LC loi b nhng hi bc cao khng mong mun ra khi thnh phn ca in p ra, ta s dng phng php lc LC iu kin chng cng hng tn s sng hi thp nht :

Gi tr ti u thng cho bng 1, tuy nhin gim cng sut t thng ly gi tr nh hn, c th ly Vy vi NLDL in p mt pha c cng sut ti 300W, in p ra 220VAC, f = 50Hz ta c Q2 = P1 = 1.300 = 300VA. T y tnh t C : ZC = = = 161,3 ; => C = = = 19,7.106 F 20 F

T iu kin chng dao ng tn s sng hi thp nht (q=3) c: Chn Suy ra cng sut phn khng : Q1 = . Dng in ti I = 1,36 A,, t y tnh c cc gi tr ca nhm cng hng ni tip:

Vy chn t in c thng s 20 F v cun cm 0,14H

35

3.1.3. Nguyn l mch ng lc 2 cp MOSFET cng sut IRFZ44N hot ng nh mt kha in t ng ngt lin tc vi tn s 50Hz ca b pht xung .T s ng ngt ny dng in lm dng chnh t c quy chy qua cun s cp. Do c dng qua cun s cp nn bn cun th cp s xut hin 1 sc in ng sinh ra dng chy theo 1 chiu no m ta tm gi l na chu k dng ca cun th cp L1, in p u ra c khuych i theo t s vng dy ca bin p. Lc ny u ra l chu k dng .Ngc li chu k m cun L2 ca phn s cp c cp in ,in p u ra l chu k m ca tn hiu. C nh th vic ng m MOSFET vi tn s 50Hz nh mch iu khin s sinh ra in p bin thin vi tn s 50Hz cun s cp.Tuy nhin in p ny s c dng xung vung khng sin v vic ng m ngun 1 chiu 12V ch to ra c cc xung vung. Cc linh kin v thit b trong mch ng lc 1 Acquy 12v, 1 Bin p xung 12DV/220AC/350W 2 MOSFET IRFZ44N, 2 in tr 10K 1 Cu tr 220V/3A, 1 Cun cm 0,14H, 1 T 20 F 3.2. Thit k mch iu khin 3.2.1. Nhim v v chc nng ca mch iu khin a) Nhim v chc nng mch iu khin Nh bit MOSFET l cc van iu khin hon ton tc l iu khin m, kha bng xung nn mch iu khin c cc chc nng sau : iu chnh c rng xung trong na chu k dng ca in p t ln colector v emitor ca van To ra c xung m c bin cn thit kha van trong na chi k cn li. Xung iu khin phi c bin v nng lng m kha van chc chn. To ra c tn s yu cu. D dng lp rp, thay th, vn hnh tin cy, n nh. Cch ly vi mch ng lc. b) Yu cu chung v mch iu khin : Mch iu khin l khu quan trng trong h thng, n l b phn quyt nh ch yu n cht lng v tin cy ca b bin i nn cn c nhng yu cu sau: ln ca dng in v in p iu khin : Cc gi tr ln nht khng vt qu gi tr cho php. Gi tr nh nht cng phi m bo c rng cung cp cho cc van m v kha an ton. Tn tht cng sut trung bnh cc iu khin nh hn gi tr cho php. Yu cu v tnh cht ca xung iu khin : Gia cc xung m ca cc cp van phi c thi gian cht thi gian cht ny phi ln hn hoc bng thi gian khi phc tnh cht iu khin ca van. Yu cu v tin cy cu mch iu khin : Phi lm vic tin cy trong mi mi trng nh trng hp nhit thay i, c t trng Yu cu v lp rp v vn hnh: S dng d dng, d thay th, lp rp. 36

3.2.2. Thit k mch iu khin a) CD4047 to ra khi pht xung ta s dng vi mch CD4047, c cc thng s sau

37

Cu trc ca IC

Hnh 3.2. S chn, cu trc logic ca vi mch

38

S chn Chn 1 : C-Timing c ni vi u dng ca t Chn 2 : R-Timing c ni vi 1 u ca tr 1k Chn 3 : u chung ca RC Chn 4 : Trng thi bn Chn 5 : Trng thi khng bn Chn 6 : Chn kch khi m Chn 7 : GND Chn 8 : Chn kch khi dng Chn 9 : Thit lp li trng thi ban u Chn 10 : u ra Q khng o Chn 11 : u ra Q o Chn 12 : Kch khi li Chn 13 : u ra OSC Chn 14 : VCC(t 3V n 15V Hot ng ca IC nh sau: Hot ng ca chn astable c php th khi t u vo chn 5 mc cao hoc mc thp ca chn 4 hoc 2 chn. rng ca xung vung ca Q v Q- l hm ca u vo ph thuc RC. Chn 5 astable cho php mch lm b to dao ng a hi qua cng 5. rng xung chn 13 bng u ra Q trong ch astable. Tuy nhin iu ny ch ng 50%. Trong ch n nh n khi c sn dng u vo + tringger (8) v trugger (6) mc thp cc xung u vo c th thuc bt k thi im no tng ng vi xung u ra. Chn 12 cho php kch m tr li khi n l xung dng. c im ca vi mch nh sau : Cng sut tiu th thp Hot ng trng thi n l ch khng n nh Cc u ra n nh mc cc th b xung ch yu cu mt tn hiu duy nht ngoi R hoc C cc u vo c m kim tra tnh in p 20V c chun ha c tnh, c tnh u ra chun v i xng. Ta tnh ton c c xung ra l 50Hz nh sau:

39

Thay s VDD = 12 V VTR = 50 % VDD Vi f = 50 Hz T = 0,02 (s) 4.4RC = 0,02 RC = 4,55.10-3 Chn t c C = 0,1 R = 45 K Chn bin tr c Rmax = 50K iu chnh in p Umin Q v Q- = 0,05 V Umax Q v Q- = 11V Dng sng u ra:

Hnh 3.3. Dng sng u ra ca bin p

b) IC LM358 40

L Ic khuych i thut ton thng dng gm hai b khuych i thut ton ring bit.

Hnh 3.4. Hnh dng v cu trc LM358

L IC 8 chn ng gi dng DIP 100T in p hot ng :+-1,5V+-16V Chn 1 u ra b khuych i thut ton A Chn 2 u vo o b khuych i A Chn 3 u vo khng o b khuych i A Chn 4 cp ngun m Chn 5 u vo khng o b khuych i B Chn 6 u vo o b khuych i B Chn 7 u ra b khuych i thut ton B Chn 8 cp ngun dng Nguyn l : IC 4047 ng vai tr chnh trong mch ny.IC ny c nui bng ngun 12V cung cp vo chn 14.Qua IC ny to ra c 2 xung dng c gi tr ngc nhau ti 2 chn u ra Q v Q o.Cp RC c tc dng to dao ng, tn s hot ng l 50Hz ta chn thong s R,C nh sau: R=47K,C=0,1uF . Sau xung ny c a qua 2 b khuch i thut ton ca LM324. trnh dng vo qu ln t xung u ra ca IC 4047 c th gy hng LM324 ta cho dng ra ny qua 1 in tr 4.7k m mi cng ra Q v Q o.Sau khi xung vo LM 324 s c khuch i ln c th m c MOSFET mch lc.Xung u ra 4047 c cp vo chn khng o ca ca b khuch i thut ton cn chn o ly in p phn hi u ra ca b khuch i thut ton.in p bo ha ly l 12V.Xung u ra ca LM 324 c nhim v ng m cc MOSFET mch lc vi tn s 50Hz. Linh kin s dng trong mch 1 IC 4047 1 LM358 1 bin tr 50K 1 t ha 104

41

U2:A
8

U1
Q Q OSC
4

BAT1 R10 Q1
IRFZ44N 1k 12V

10 11 13 LM358 10k 4.7k

R4
4.7k 3 1 2

5 4 6 8 12

R5 R7

AST AST -T +T RTRG

RCC

104

R3
1k

CX

Q2 R8
1k IRFZ44N

TR1
12vDC/220vAC

50K

C1 R11
LED 10k

2 9

RV1 D1 U2:B
8

RX MR

4047

+88.8

Amps

BATTERY SUPPLY

DIS

Hnh 3.5 S nguyn l mch nghch lu c lp 12VDC ln 220VAC

42
5 7 6 1k

L1 R1 R9
LM358 10k

Q3
IRFZ44N

C3 Q4 R6
1k IRFZ44N

Fuse 250V/3A

R12
10k

Load

AC LOAD

TI LIU THAM KHO 1. Hng dn thit k in t cng sut Phm Quc Hi NXB Khc K thut 2. in t cng sut V Minh Chnh (ch bin) NXB Khoa hc-K Thut 3. Gio trnh thit k in t cng sut Trn Vn Thnh i hc bch khoa H Ni 4. Linh kin bn dn v vi mch T.s H Vn Sung NXB Gio dc 5. Gio trnh my in - ng Vn o Trn Khnh H Nguyn Hng Thanh NXB- Gio dc

43

MC LC M U CHNG 1: GII THIU V IN T CNG SUT V CC VAN BN DN 1.1. Khi nim v in t cng sut 1.1. nh ngha.2 1.2. Phn loi v ng dng..3 1.2. Cc phn t bn dn cng sut c bn 1.2.1. c tnh c bn ca cc phn t bn dn cng sut3 1.2.2. Diode cng sut....4 1.2.3. Thyristor (SCR)6 1.2.4. GTO(GateTurn-off Thysistor).9 1.2.5. Transistor cng sut, BJT ( Bipolar Junction Transistor).11 1.2.6. Trasisto trng, MOSFET.14 1.2.7. Transisto c cc iu khin cch ly IGBT.20 CHNG 2 : GII THIU CHUNG V NGHCH LU NG LP 2.1. Cc khi nim c bn 2.1.1. Khi nim28 2.1.2. Sc khc nhau gia nghch lu c lp v nghch lu ph thuc28 2.1.3. Phn loi nghch lu c lp28 2.2. Nghch lu ng lp in p 2.2.1. Nghch lu c lp in p 1 pha28 2.2.2. Nghch lu c lp in p ba pha.30 2.3. Nghc lu c lp dng in 2.3.1. Nghch lu dng mt pha..33 2.3.2. Nghich lu dng ba pha34 . CHNG 3 : TNH TON V THIT K SN PHM 3.1. Tnh ton mch ng lc 3.1.1. Van cng sut.37 3.1.2. Ngun - Acquy...38 3.1.3. Khi bin p...38 3.1.4. Tnh ton b lc LC...40 3.1.5. Nguyn l mch ng lc..41 3.2. Thit k mch iu khin 3.2.1. Cc linh kin chnh42 3.2.2. Nguyn l mch iu khin...44 TI LIU THAM KHO 44

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