3

Bi ging K Thut Cm Bin (sensors)

Hoang Si Hong

----2011---Faculty of Electrical Eng., Hanoi Univ. of Science and Technology (HUST), Hanoi, VietNam

Hoang Si Hong-HUST

Ngun tham kho

Note: Bi ging mn hc ny c tham kho, trch dn v lc dch t cc ngun sau: Sch K thut o lng cc i lng in tp 1, 2- Phm Thng Hn, Nguyn Trng Qu. Cc b cm bin trong o lng-L Vn Doanh Cc b cm bin-Nguyn Tng Ph o lng in v cc b cm bin: Ng.V.Ho v Hong S Hng Sensor technology handbook (edited by JON WILSON) Elements of Electronic Instrumentation and Measurement (Prentice-Hall Company) Sch gii thch n v o lng hp php ca Vit Nam Bi ging v website: Bi ging k thut cm bin-Hong S Hng-BKHN(2005) Bi ging Cm bin v k thut o:P.T.N.Yn, Ng.T.L.Hng BKHN (2010) Bi ging MEMs ITIMS BKHN Mt s bi ging v cm bin v o lng t cc trng i hc KT khc Vit Nam Website: sciendirect/sensors and actuators A and B

Hoang Si Hong-HUST

Ni dung mn hc v mc ch
Ni dung
Chapter 1: Khi nim chung v Cm bin (2b) Chapter 2: Cm bin in tr (2b) Chng 3: Cm bin o nhit (2b) Chng 4: Cm bin quang (2b) Chng 5: Cm bin tnh in (2b) Chng 6: Cm bin Hall v ho in Chng 6: Cm bin v PLC(1b) Mc ch: nm c cu to, nguyn l hot ng v ng dng ca cc loi cm bin thng dng trong cng nghip v i sng. Nm c xu th pht trin chung ca cng ngh cm bin trn th gii.

Hoang Si Hong-HUST

Chng 3: Cm bin o nhit

Ni dung
Khi nim chung Nhit k gin n Cm bin cp nhit in (Thermocouple) Cm bin nhit in tr (RTD) Cm bin nhit da trn tnh cht ca diot v tranzito Ho k Surface acoustic wave (SAW) v dao ng thch anh

Bao nhiu ?
Hoang Si Hong-HUST 4

Khi nim

Hoang Si Hong-HUST

Khi nim

Hoang Si Hong-HUST

Nhit k gin n dng cht rn

Hoang Si Hong-HUST

Nhit k gin n dng cht lng

Hoang Si Hong-HUST

Cm bin cp nhit in
Nguyn l: - Hiu ng thomson: vi vt liu ng nht A, trn n c hai im phn bit khc nhau l M v N c nhit tng ng l t1 v t2, th gia chng s xut hin mt sut in ng emn = tch phn (t t1->t2) ca dt, trong l h s vt liu thomson cho trc
M (t1)
A

N (t2)

Hiu ng Peltier: hai vt liu Av B khc nhau tip xc vi nhau ti mt im no th xut hin mt sut in ng eAB(t)
A t

Hoang Si Hong-HUST

Cm bin cp nhit in
Nguyn l: - Hiu ng seebeck: kt hp hai hiu ng ni trn -> xut hin sut in ng nhit in eT(t) = tch phn t t1 n t2 ca (A B) dt + eKM(t) eJN(t) - Trong A , B l h s vt liu thomson ca hai vt liu A, B tng ng. t1 < t2 l nhit tng ng ti hai im khc nhau. - Nu gi nhit mt u khng i bng khng C (0oC) (nhit u t do) th xut hin sut in ng ra mt chiu u cn li (u lm vic, t1 nhit t) t l vi nhit : ET (t) = f(t)
M K

N
Hoang Si Hong-HUST

J t2
10

Vt liu ch to

Hoang Si Hong-HUST

11

Cu to

(hn im v cch li hnh vy c)

Hoang Si Hong-HUST

12

Cu to

Hoang Si Hong-HUST

13

Chng loi

Hoang Si Hong-HUST

14

Chng loi

Hoang Si Hong-HUST

15

c tnh

Hoang Si Hong-HUST

16

Cc nguyn nhn gy sai s

- Sai s do nhit u t do thay i. Khi khc , u t do c t mi trng khng C, nhng trong thc t nhit u t do khc khng C - Sai s do s thay i in tr ng dy, cp nhit hoc ch th - Sai s do t khng ng v tr, hng hoc din tch tip xc qu b. Thng thng ngi ta a chiu su ca cp nhit vo mi trng cn o khong t5-10 ln so vi ng knh dy ca cp nhit. - Hai dy cp nhit b m c th gy ra sai s ti 20% v in p ra tng gp 10 ln. Nu dy dn khng c v bc chng nhiu v t cm bin trong in trng ca ng dy cao th (1-5 kV) th n s chu nh hng ca nhiu in dung v sai s ln n vi %. Chm mt vo ngun 220 VAC sai s c th ln n 10%. - Can nhit b t mi hn cng gy ra sai s. - Chn dy b sai cng c th gy sai s - ng dng: o nhit , o dng tn s cao, hng chuyn ng, lu tc, p sut nh..
Hoang Si Hong-HUST 17

Mch o

Hoang Si Hong-HUST

18

Mch o

Hoang Si Hong-HUST

19

Mch o

Hoang Si Hong-HUST

20

B nhit u t do

Hoang Si Hong-HUST

21

B nhit u t do

Hoang Si Hong-HUST

22

nh hng ca in tr mch o

Hoang Si Hong-HUST

23

nh hng ca in tr mch o

Hoang Si Hong-HUST

24

Cm bin nhit in tr
/N: l chuyn i c in tr thay i theo s thay i nhit ca n.

Hoang Si Hong-HUST

25

Nhit in tr kim loi

Nhit in tr dy kim loi: thng c ch to t ng, platin v niken vi ng knh dy t 0.02-0.06 mm.

Hoang Si Hong-HUST

26

Nhit in tr kim loi

Nhit in tr dy kim loi: thng c ch to t ng, platin v niken vi ng knh dy t 0.02-0.06 mm.

Hoang Si Hong-HUST

27

Nhit in tr kim loi

Hoang Si Hong-HUST

28

c tnh

Cu tuyn tnh nhng s dng nhit thp Platinum is the best metal for RTD elements for three reasons. It follows a very linear resistance-to temperature relationship; it follows its resistance-to-temperature relationship in a highly repeatable manner over its temperature range; and it has the widest temperature range among the metals used to make RTDs. Platinum is not the most sensitive metal; however, it is the metal that offers the best longterm stability. - The accuracy of an RTD is significantly better than that of a thermocouple within an RTDs normal temperature range of 184.44C (300F) to 648.88C (1200F).
Hoang Si Hong-HUST 29

Pt100
S khc nhau gia Pt100 (100 , ti 0oC), 500 v Pt1000 ? The most common type (PT100) has a resistance of 100 ohms at 0 C and 138.4 ohms at 100 C. There are also PT1000 sensors that have a resistance of 1000 ohms at 0 C and 1385 ohms ti 100C. Ti sao Platinum c s dng ch yu ch to RTD: bi v n c th hot ng n nh trong thi gian di ti mi trng c nhit cao. Hn na Pt l s la chn tt hn so vi Cu hoc Ni bi v s tr v mt ho hc ca n v c kh nng chng li s xi ho . Mch o c th dng ngun dng, mch cu hoc time 555
Hoang Si Hong-HUST 30

Cu to

The Standard Platinum Resistance Thermometer is fragile and used only in laboratory environments

Hoang Si Hong-HUST

31

Mt s kiu nhit in tr
There are three main classes of Platinum Resistance Thermometers (PRTs): Standard Platinum Resistance Thermometers (SPRTs), Secondary Standard Platinum Resistance Thermometers (Secondary SPRTs), and Industrial Platinum Resistance Thermometers (IPRTs). Table 32.6 presents information about each. (Rugged :chc chn, Fragile: d gy)

Hoang Si Hong-HUST

32

RTD kiu mng mng

The temperature range of thin film platinum elements is 50C (58F) to 400C (752F); accuracy is from 0.5C (0.9F) to 2.0C (3.6F). The most common thin-film element has a 100-W ice point resistance and a temperature coefficient of 0.00385C.

Hoang Si Hong-HUST

33

Cng ngh sn xut RTD mng mng

Hoang Si Hong-HUST

34

Nhit in tr bn dn (NTC-PTC)
large negative temperature coefficient of resistance (NTC) large positive temperature coefficient of resistance (PTC) A- hng s ph thuc vo tnh cht vt l ca bn dn, kch thc v hnh dng ca in tr. - hng s ph thuc vo tnh cht vt l ca bn dn T- nhit tuyt i e- c s lgarit t nhin h s nhit ln hn RTD nhng c tnh phi tuyn

Hoang Si Hong-HUST

35

Cu to nhit in tr bn dn (NTC-PTC)

Hoang Si Hong-HUST

36

Sai s v ng dng
Sai s ca nhit k in tr ch yu l do s thay i in tr ng dy khi nhit mi trng thay i. in tr ng dy c th t ti 5 trong khi in tr ca chuyn i t vi trm . Ngoi ra dng in chy qua in tr gy nng cng lm cho in tr tng v gy ra sai s. Thng chn dng khong vi mA . ng dng ca RTD,NTD.. ch yu o nhit , o cc i lng khng in nh o di chuyn, p sut, nng mt s cht kh..

Hoang Si Hong-HUST

37

Mch o v chng sai s

Ti sao l nhit in tr 2, 3 v 4 dy ?
B in tr dy khi s dng ngun p

B in tr dy khi s dng ngun dng

Hoang Si Hong-HUST

38

Mch o kiu timer 555

Chu k T ca nhp xung ng ra ca time t l vi s bin i R1 (Rx) khi nhit thay i

Hoang Si Hong-HUST

39

Mch o dng ngun dng

Hoang Si Hong-HUST

40

Cm bin nhit da trn tnh cht bn dn ca it v tranzito

c tnh ca it ph thuc vo nhit . Da trn c tnh ngi ta o nhit hoc s thay i nhit ca mt i tng no . Tuy nhin s ph thuc ny khng tuyn tnh v khng tin cy, do vy ngi ta s dng tnh cht ph thuc in p gia bazo-emito ca mt tranzito vo nhit khi duy tr dng in colecto (Ic) khng i.

Hoang Si Hong-HUST

41

Nguyn l

Hoang Si Hong-HUST

42

Nguyn l

Hoang Si Hong-HUST

43

B phi tuyn

Hoang Si Hong-HUST

44

IC LM35 hoc LM335

Hoang Si Hong-HUST

45

AD590
(Tham kho: bai giang N.N. Tan v Ng.V.Ky)

Hoang Si Hong-HUST

46

Ho quang k bc x ton phn

Hoang Si Hong-HUST

47

Ho quang k bc x ton phn

Hoang Si Hong-HUST

48

Ho quang k bc x ton phn

Hoang Si Hong-HUST

49

Ho quang k bc x ton phn

Hoang Si Hong-HUST

50

Ho k quang in

Hoang Si Hong-HUST

51

Ho k quang in

Hoang Si Hong-HUST

52

Ho k quang in

Hoang Si Hong-HUST

53

Ho k mu sc

Hoang Si Hong-HUST

54

o nhit vi cm bin sng m b mt (SAW-surface acoustic wave)

Content Piezoelectric behavior can be manifested in two distinct ways. Direct piezoelectric effect occurs when a piezoelectric material becomes electrically charged when subjected to a mechanical stress and conversion of mechanical energy to electrical energy. Converse piezoelectric effect occurs when the piezoelectric material becomes strained when placed in an electric field and conversion of electrical energy to mechanical energy

Hoang Si Hong-HUST

55

o nhit vi cm bin sng m b mt (SAW-surface acoustic wave)

0 dB
3dB

insertion loss

M Hz

BWnull
BW3dB

center frequency (f0)

Fig. 7. Temperature dependence of the center frequency of two-port SAW resonators using AlN/3C-SiC and AlN/Si structures.
Hoang Si Hong-HUST 56

Frequency Response

o nhit vi cm bin sng m b mt (SAW-surface acoustic wave)

0 dB
3dB

insertion loss

M Hz

BWnull
BW3dB

center frequency (f0)

Fig. 7. Temperature dependence of the center frequency of two-port SAW resonators using AlN/3C-SiC and AlN/Si structures.
Hoang Si Hong-HUST 57

Frequency Response

Wireless SAW temperature sensor

Principle - Depending on changes in temperature, the shifts (time position and phase angle) of the reflection peaks were modulated. - The phase angle shift was used to evaluate the sensitivity because it provides a much higher resolution than the time shift of the reflection peak. - All three reflectors showed the same sign of the phase shifts because the temperature effects are equal on all the reflectors
time

2-1

Relation between phase different () and temperature (T)

TDC: the temperature coefficient of delay of piezoelectric material T: measurement temperature Tref: reference temperature
Hoang Si Hong-HUST 58

Cm bin nhit thch anh

Hoang Si Hong-HUST

59

Cu hi v Lu
-Nguyn l? - ng dng? - B sai s? - Tnh ton thit k mch o?

Hoang Si Hong-HUST

60