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Bi ging K Thut Cm Bin (sensors)

Hoang Si Hong

----2011---Faculty of Electrical Eng., Hanoi Univ. of Science and Technology (HUST), Hanoi, VietNam

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Ngun tham kho

Note: Bi ging mn hc ny c tham kho, trch dn v lc dch t cc ngun sau: Sch K thut o lng cc i lng in tp 1, 2- Phm Thng Hn, Nguyn Trng Qu. Cc b cm bin trong o lng-L Vn Doanh Cc b cm bin-Nguyn Tng Ph o lng in v cc b cm bin: Ng.V.Ho v Hong S Hng Sensor technology handbook (edited by JON WILSON) Elements of Electronic Instrumentation and Measurement (Prentice-Hall Company) Sch gii thch n v o lng hp php ca Vit Nam Bi ging v website: Bi ging k thut cm bin-Hong S Hng-BKHN(2005) Bi ging Cm bin v k thut o:P.T.N.Yn, Ng.T.L.Hng BKHN (2010) Bi ging MEMs ITIMS BKHN Mt s bi ging v cm bin v o lng t cc trng i hc KT khc Vit Nam Website: sciendirect/sensors and actuators A and B

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Ni dung mn hc v mc ch
Ni dung
Chapter 1: Khi nim chung v Cm bin (2b) Chapter 2: Cm bin in tr (2b) Chng 3: Cm bin o nhit (2b) Chng 4: Cm bin quang (2b) Chng 5: Cm bin tnh in (2b) Chng 6: Cm bin Hall v ho in Chng 6: Cm bin v PLC(1b) Mc ch: nm c cu to, nguyn l hot ng v ng dng ca cc loi cm bin thng dng trong cng nghip v i sng. Nm c xu th pht trin chung ca cng ngh cm bin trn th gii.

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Chng 3: Cm bin in tr
Ni dung
Cm bin in tr lc cng Bin tr

Bao nhiu kg ?

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in tr lc cng (strain gage)-Cu to

Cu to (dy in tr, mng mng kim loi, bn dn (silicon, SiC) Dy mnh, l mng v mng mng Trn giy mng cch in, dn dy in tr (constantan, nicrom..) hnh rng lc ng knh 0.02 0.03 mm. Chiu di lo thng t 8-15 mm, chiu rng a0 3-10 mm. in tr ban u 800 1000 , lng thay i in tr khong 10-15 a0

l0

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Nguyn l
Khi dy dn chu bin dng c kh th in tr ca n thay i, hin tng gi l hiu ng tenzo (piezoresitive). Chuyn i lm vic da trn hiu ng gi l chuyn i in tr lc cng

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Mt s tnh cht ca cm bin

-Tu theo ng knh dy s c dng cho php i qua tng ng. -V d: ng knh = 12 mm th dng cho php l 15 mA - ng knh = 15 mm th dng cho php l 35 mA - Thng thng nhy theo l thuyt s khc so vi c tnh thc t. Do vy khi sn xut ngi ta s ch to hng lot. Sau cc cm bin s c hiu chun n chic tu tho ng dng thc t - H s nhit ca vt liu cn phi b hoc cn c b nhit trong mch o - Vt liu ch to dy in tr cn c in tr sut ln gim kch thc chuyn i - Tng di tc dng lo tng nhy

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Cch dn tenzo
K thut dn (hnh v): trc khi dn phi lm sch b mt vt liu bng ho cht-> ph lp keo dn Chn v tr dn: c bin dng ln nht tng nhy

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Mch o

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Mch o

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Cu 4 nhnh

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Mch phn p

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Sai s v ng dng

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Loadcell (ch to cn in t)

Cn t Cn bng nh lng Cn phi liu

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Loadcell

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ng dng phn t in tr lc cng cho cm bin p sut

P= h g, P = F/A Trong h chiu cao ct cht lng. l trng lng ring cht lng g l gia tc trng trng F lc tc ng ln n v din tch A 1 Pa=1 N/m2 = 7.5104 cm Hg. 1 atm=760 torr=101,325 Pa. 1 psi=6.89103Pa=0.0703 atm. Cm bin p sut kiu bin dng mng Cm bin p sut kiu trn c s MEMS
Gage Factor = G = (R/R)/(L/L)
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Cm bin p sut thu ngn

Khi p sut cn o tc ng, chiu cao ct thu ngn gia 2 nhnh ng lch nhau , iu dn n in tr ca hai khi khng kh trong hai nhnh ng lch nhau 1 lng l R v in p ra cu in tr s l:

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Cm bin p sut kiu bn hoc mng mng s dng cc in tr lc cng dy kim loi

Mi lin h gia vng Z v p sut p xc nh nh sau:

Trong r l bn knh mng, E l Youngs modulus (N/m2), v is Poissons ratio v g l dy ca bn mng hoc mng -> vng thay i t l vi s thay i in tr ca cc in tr lc cng-> p sut Hoang Si Hong-HUST

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Cm bin p sut kiu MEMS s dng vt liu bn dn lm phn t nhy

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Cm bin p sut kiu MEMS s dng vt liu bn dn lm phn t nhy

Khi c ng sut tc ng vo mng Th in tr ca phn t nhy thay i l:

Trong l v l l h s p tr (piezoresistive) v ng sut theo hng dc t v t l l h s p tr (piezoresistive) v ng sut theo hng ngang

in p ra cu

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ng dng SiC cho vic ch to cm bin o p sut (MEMS)

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Thuc tnh mt s vt liu thng dng cho ch to in tr lc cng

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Cm bin gia tc trn c s in tr lc cng

piezoresistive accelerometer

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Chuyn i bin tr
Cu to: gm mt li bng vt liu cch in: gm, s c hnh dng khc nhau Trn li qun dy in tr bng maganin, niken, crom.. ng knh t 0.02 0.1 mm Trn li v dy qun c con trt ch to bng hp kim platin-iridi, lc t khong 0.010.1N

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Chuyn i bin tr
Nu in tr ton phn ca chuyn i l R vi s vng dy W. Th in tr c th pht hin b nht l Ro = R/W-> ngung nhy.
X Rx

Nu chin di bin tr l l, th di chuyn b nht c th pht hin c l Xo = l/W. Sai s ri rc ca chuyn i vi cun dy qun nh l: = Rmin/2R = l/(2W) Rmin l in tr ton phn ca mt vng dy Sai s phi tuyn t 0.1 n 0.03%, ss nhit 0.1%/10 C
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Chuyn i bin tr
mch bin tr I = U /( Rx + Rct)= U/(Rct + R. (x/l)) dng in trong mch t l nghch vi in tr cn o, khng tuyn tnh, dng in ko bin thin t 0 tr i
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X Rx

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Mch phn p

Quan h gia Ux v x l tuyn tnh. Ux bin thin t 0 n U khi Rx bin thin t 0 n R

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Mch cu

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Mt s kiu chuyn i o mc, dch chuyn v p sut trn c s cm bin bin tr

pressure sensor

Displacement sensor
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level sensor
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Lu v cu hi
Nguyn l v ng dng ca cc cm bin kiu in tr u im v nhc im? Cm bin p sut trn c s p-tr v bin tr dch chuyn o thng o khong p sut no?

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