MCH KHUCH I CNG SUT M TN

1. MCH KCS M TN LP A (nhc li)

n u im:
Mo phi tuyn t do chn c on c tuyn lm
vic ca transistor.
Nhc im:
Cng sut tn hiu ra nh do mch ch lm vic vi
tn hiu nh.
Hiu sut b do phi phn cc DC trc cho
transistor gy tiu tn DC khng mong mun.
Lp A: Transistor ch lm vic trong c chu k ca tn
hiu ng vo phi phn cc DC cho transistor.
2. 2. 2. 2. MCH KCS M TN LP B
n Mch KCS m tn lp B transistor ghp y
ko (push pull) dng bin p.
Mch KCS m tn lp AB transistor ghp b
ph: mch OTL, mch OCL.
Vn nng cng sut cho mch KCS m tn.
Lp B: Transistor ch lm vic trong 1 bn k ca
tn hiu ng vo Vi tn hiu xoay chiu c 2 bn
k ta phi dng 2 transistor.
2.1. Mch KCS lp B transistor ghp y ko
dng bin p
Nguyn l hot ng:
Bn k dng ca Vi:
(Va>Vb>Vc) Q
1
dn, Q
2
khng dn i
T1
, i
T2
= 0.
Bn k m ca Vi:
(Va<Vb<Vc) Q
1
khng
dn, Q
2
dn i
T2
, i
T1
= 0.
Dng ti: i
L
= i
T1
- i
T2
Dng ngun: i
S
= i
T1
+ i
T2
i
L
i
S
i
T2
i
T1
Q1
Vi
c
RL
T1
Kp:2Ks
a
b
T2
2Np:Ns
Vcc
Q2
V DC: Cc bin p T1, T2 cch ly nn cc transistor Q1, Q2
khng c phn cc DC trc Tn hao DC khng ng k.
2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)
n dng ti khng mo
I
P1
= I
P2
= I
P
Hot ng ca 2 transistor phi
i xng Q1Q2, cc bin p T1
v T2 phi c im gia cun th
cp v cun s cp tng ng.
(center-tapped transformer)
Dng trung bnh ca ngun
cung cp:
I
P1
-I
P2
I
P1
i
T2
i
T1
Vi
i
L
t
t
t
t
i
S
t
T/2 T 3T/2 2T
I
P2
I
P1 I
P2

P
T
P SAV
I
wtdt I
T
I
2
sin
2
2 /
0
= =

2.1. Mch KCS lp B transistor ghp y ko

dng bin p (tt)
Cng sut trung bnh phn phi trn ti P
L
:
L PL
L
PL
PL PL L
R I
R
V
I V P
2
2
2
1
2
1
2
1
= = =
Vi V
PL
, I
PL
l bin in p nh v bin
dng nh ca ti:

=
=
P
S
P
PL
P
P
S
PL
I
N
N
I
V
N
N
V
V
P
, I
P
l bin p v bin
dng khng mo ng ra ca
cc transistor.
L P
S
P
L
P
P
S
P P L
R I
N
N
R
V
N
N
I V P
2
2
2
2
2
1
2
1
2
1
|
|

\
|
=
|
|

\
|
= = Suy ra:
Cng sut trung bnh phn phi trn ti cc i:
2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)
L P
S
P
L
P
P
S
P P L
R I
N
N
R
V
N
N
I V P
2
max
2
2
max
2
max max max
2
1
2
1
2
1
|
|

\
|
=
|
|

\
|
= =
T ng ti mt chiu DCLL,
ta c bin p ng ra ca
mi transistor cc i:
V
Pmax
= V
CC
Suy ra:
L
CC
P
S
L
R
V
N
N
P
2
2
max
2
1
|
|

\
|
=
Trng hp N
P
= N
S

L
CC
L
R
V
P
2
max
2
1
=
Cng sut trung bnh ca ngun cung cp P
S
:
2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)

P
CC SAV CC S
I
V I V P
2
= =
Cng sut trung bnh cc i ca ngun cung cp P
Smax
:
khi ti tiu th cng sut cc i P
Lmax.

max
max
2
max
P
CC S S
I
V P P
L
P
= =
Vi:
L
CC
P
S
L
PL
P
S
PL
P
S
P
R
V
N
N
R
V
N
N
I
N
N
I
2
max
max max
|
|

\
|
=
|
|

\
|
=
|
|

\
|
=
Suy ra:
L
CC
P
S
S
R
V
N
N
P
2
2
max
2
|
|

\
|
=

Cng sut tiu tn ca cc transistor:

2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)
L S n dissipatio d tn tiu tt C
P P P P P = = =
) ( ) (
Cng sut tiu tn ca 1 transistor: P
d
/2
Cng sut tiu tn cc i ca cc transistor:
) (
2
1 2
2
2 2
P
L
P
P
S
L
P
P
S
CC L S C
V f
R
V
N
N
R
V
N
N
V P P P =
|
|

\
|

|
|

\
|
= =

Ly o hm, kho st cc tr ta suy ra cng sut tiu tn

cc i ca cc transistor:

CC P
V V

2
= th
L
CC
P
S
C
R
V
N
N
P
2
2
2
max
2
|
|

\
|
=

2.1. Mch KCS lp B transistor ghp y ko

dng bin p (tt)

CC
P
L
P
P
S
CC
L
P
P
S
S
L
V
V
R
V
N
N
V
R
V
N
N
P
P
4
2
2
1
2
2
2

=
|
|

\
|
|
|

\
|
= =
Hiu sut cc i khi P
Lmax
v P
Smax
V
Pmax
= V
CC
% 5 . 78
4
max
max
max
= = =

S
L
P
P
Hiu sut:
u im:
Do mi transistor lm vic 1 bn k tn hiu vo nn
mch c th hot ng vi tn hiu c bin ln cng
sut ra trn ti ca mch ln.
Hiu sut cao.
Nhc im:
Mo xuyn tm do ngng dn ca transistor.
Bin p cng knh, t tin.
tn hiu ng ra khng mo th cc bin p trong
mch phi c cun s cp (T2) v th cp (T1) i xng.
Mo tn hiu cun thc cp bin p khi tn hiu vo
cun s cp ln do hin tng t tr.
2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)
Bi tp p dng:
Mt mch khuch i cng sut m tn lp B transistor
ghp y ko dng bin p c dng collector nh v in
p nh ng ra mi transistor l 4 (A) v 12 (V). Ngun
cung cp 24 (V), t s bin p Np:Ns = 1:1. Gi s b qua
cc tn hao dy qun ca cc bin p. Hy tm:
a. Cng sut trung bnh phn phi trn ti.
b. Cng sut trung bnh c cung cp t ngun DC.
c. Cng sut tiu tn trn mi transistor.
d. Hiu sut ca mch trong trng hp ny.
e. Gi s ti 8 (), tnh cng sut cc i phn phi
trn ti.
2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)
Bi gii:
Theo bi: V
P
= 12 (V), I
P
= 4 (A), Np/Ns = 1.
a. Cng sut trung bnh phn phi trn ti: P
L
= 0.5V
P
I
P
= 24 (W)
b. Cng sut trung bnh c cung cp t ngun DC:
P
S
= V
CC
I
SAV
= V
CC
(0.636I
P
) = 61.115 (W)
c. Cng sut tiu tn trn mi transistor:
P
d
= P
S
P
L
= 37.115 (W) 1 transistor: P
d
/2 = 18.5575 (W)
d. Hiu sut: = P
L
/P
S
= 39.27 %
e. Cng sut cc i phn phi trn ti nu R
L
= 8 ():
P
Lmax
= 0.5(V
CC
V
CC
)/R
L
= 36 (W).
Bi tp v nh: 2.13, 2.14, 2.15, 2.16, 2.17, 2.18.
2.1. Mch KCS lp B transistor ghp y ko
dng bin p (tt)
Lp AB: Transistor ch lm vic trong 1 bn k ca
tn hiu ng vo nhng trnh mo xuyn tm ta
phi phn cc trc cho mi transistor in p mi ni
V
BE
v in p mi ni V
EB
ln (0.7 V) khi c
tn hiu xoay chiu ng vo th transistor s dn ngay.
Do hn ch ca mch KCS T dng bin p nn
trnh cc hn ch th ta khng dng bin p trong
cc mch KCS T na mch KCS T khng
dng bin p ng ra dng OTL (Output
TransformerLess).
2.2. Mch KCS lp AB transistor ghp b ph
2.2.1. Mch KCS m tn OTL
i
L
i
T2
i
T1
Re2
D1
Q1
D2
M
Re1
RL
R1
Vi
R2
+Vcc
B1
Q2
Co
Ci
B2
Phn tch mch v nguyn l
hot ng:
in tr R
1
, R
2
, diode D
1
, D
2
: to
phn cc trc cho transistor Q1,
Q2. Cc dng khc:
VR
Q3
Ry
B1
Rx
B2
D1
VR
D2
B1
B2
D1
VR
B1
B2
VR
B1
B2
2.2.1. Mch KCS m tn OTL (tt)
i
L
i
T2
i
T1
Re2
D1
Q1
D2
M
Re1
RL
R1
Vi
R2
+Vcc
B1
Q2
Co
Ci
B2
Cc in tr R
e1
, R
e2
: l cc in tr
n nh nhit cho Q1, Q2.
T in C
o
: cch ly DC ti vi ng
ra tng cng sut (M) v ng vai tr
ngun cung cp cho Q2 hot ng
bn k m ca Vi nn gi l t xut
m.
Bn k dng ca Vi:Q1 dn, Q2
khng dn i
T1
, i
T2
= 0.
Bn k m ca Vi:Q1 khng dn,
Q2 dn i
T2
, i
T1
= 0.
Dng ti: i
L
= i
T1
- i
T2
Dng ngun: i
S
= i
T1
2.2.1. Mch KCS m tn OTL (tt)
n dng ti khng mo
I
P1
= I
P2
= I
P
Hot ng ca 2 transistor
phi i xng Q1Q2 (chn
theo cp), R
1
= R
2
, R
e1
= R
e2
, in
th ti im gia V
M
= Vcc/2.
Dng trung bnh ca ngun
cung cp:

P
T
P SAV
I
wtdt I
T
I = =

2 /
0
sin
1
2.2.1. Mch KCS m tn OTL (tt)
Cng sut trung bnh phn phi trn ti P
L
:
L PL
L
PL
PL PL L
R I
R
V
I V P
2
2
2
1
2
1
2
1
= = =
Vi V
PL
, I
PL
l bin in p nh v bin dng
nh ca ti. Gi s V
P
, I
P
l bin p v bin dng
khng mo ng ra ca cc transistor. Ta xt Q1 dn:
I
P
= I
PL
Q1
VpL
Vp
+
-
Re
RL
+
-

+
= =
+
=
L e
P
P PL
P
L e
L
PL
R R
V
I I
V
R R
R
V

L
P
L e
L
L
R
V
R R
R
P
2
2
2
1
|
|

\
|
+
=
2.2.1. Mch KCS m tn OTL (tt)
Cng sut trung bnh phn phi trn ti cc i khi: V
P
= V
pmax
Xt ng ti DCLL:
Q
AB
0
V
CC
/2
2
max
CC
P
V
V =
L
CC
L e
L
L
R
V
R R
R
P
2
2
max
8
1
|
|

\
|
+
=
Nu chn R
e
<< R
L

( thng chn R
e
= 0.1R
L
):
L
CC
L
R
V
P
2
max
8
1
=
2.2.1. Mch KCS m tn OTL (tt)
Cng sut trung bnh ca ngun cung cp P
S
:

P
CC SAV CC S
I
V I V P = =
Cng sut trung bnh cc i ca ngun cung cp P
Smax
:
khi ti tiu th cng sut cc i P
Lmax.

max
max
max
P
CC S S
I
V P P
L
P
= =
) ( 2
max
max
L e
CC
L e
P
P
R R
V
R R
V
I
+
=
+
=

) ( 2
2
max
max
L e
CC
S S
R R
V
P P
L
P
+
= =

2.2.1. Mch KCS m tn OTL (tt)

Cng sut tiu tn ca mt transistor:
L S n dissipatio d tn tiu tt C
P P P P P = = =
) ( ) (

CC
P
L e
L
e L
P
CC
L
P
L e
L
S
L
V
V
R R
R
R R
V
V
R
V
R R
R
P
P
|
|

\
|
+
=
+
|
|

\
|
+
= =
2
1
2
1
2
2

Hiu sut cc i khi P

lmax
v P
smax
V
Pmax
= V
CC
/2
B
L e
L
S
L
AB
R R
R
P
P

<
|
|

\
|
+
= =
4
max
max
max
Hiu sut:
2.2.1. Mch KCS m tn OTL (tt)
n u im:
Mch khng dng bin p nn khc phc cc nhc
im ca mch KCS T dng bin p.
Tn hiu ra khng mo xuyn tm.
Hiu sut cao.
n Nhc im:
Mch dng t xut m nn lm suy hao tn hiu.
Do suy hao ca t khng ng u theo tn s nn dng
t xut m s hn ch nhng tn hiu c tn s thp
mch hn ch tn hiu siu trm. Tn s ct thp ca mch:
o L e
C
C R R
f
) ( 2
1
+
=

2.2.1. Mch KCS m tn OTL (tt)

Bi tp p dng:
Cho mch KCS T dng OTL c ngun cung cp 20 (V), cc in tr R
1
= R
2
=
10 (K), R
e1
= R
e2
= 1(), R
L
= 8 (). Diode dng loi Si. T C
o
= 500 (uF). Gi
s mch c thit k i xng. Hy tm:
a. Cc dng in qua cc in tr R
1
, R
2
.
b. Cc in th ti cc nt B
1
, B
2
.
c. Nu bin p nh ng ra ca mi transistor l 8 (V), tnh cng sut trung
bnh phn phi trn ti trong trng hp ny.
d. Cng sut trung bnh ca ngun cung cp cu c.
e. Hiu sut cu c.
f. Cng sut trung bnh cc i phn phi trn ti.
g. Nu Vi c gi tr 5 (Vrms), tnh cng sut trung bnh phn phi trn ti.
h. Tn s ct thp ca mch.
2.2.1. Mch KCS m tn OTL (tt)
Bi gii:
a. V DC, cc transistor c phn cc in p B-E ln nn ta c
th xem I
B1
, I
B2
<< I
R1
, I
R2
, I
D1
, I
D2
I
R1
= I
R2
= I
D1
= I
D2
.
) ( 93 . 0
2
2 1
2 1
mA
R R
V V
I I
CC
R R
=
+

= =

b. Cc in th ti cc im B1, B2:
) ( 7 . 10 2
) ( 3 . 9
2 1
2 2 2
V V V V
V I R V
B B
R B
= + =
= =

c. Cho V
P
= 8 (V) cng sut trung bnh trn ti:
) ( 16 . 3
2
1
2
2
W
R
V
R R
R
P
L
P
L e
L
L
=
|
|

\
|
+
=
2.2.1. Mch KCS m tn OTL (tt)
Bi gii: (tt)
d. Cng sut trung bnh ca ngun cung cp:
) ( 66 . 5
) (
W
R R
V
V
I
V I V P
L e
P
CC
P
CC SAV CC S
=
+
= = =

e. Hiu sut:
% 84 . 55 = =
S
L
P
P

f. Cng sut trung bnh trn ti cc i V

Pmax
= V
CC
/2 = 10 (V)
) ( 94 . 4
8
1
2
2
max
W
R
V
R R
R
P
L
CC
L e
L
L
=
|
|

\
|
+
=
g. Cng sut trung bnh trn ti nu Vi = 5 (Vrms) V
L
= 5 (Vrms)
h. Tn s ct thp:
) ( 37 . 35
) ( 2
1
Hz
C R R
f
o L e
C
=
+
=

Bi tp v nh: 2.22, 2.23

2.2.2. Mch OCL (Output CapacitorLess)
i
L
i
T2
i
T1
Re2
D1
-Vee
Q1
D2
M
Re1
RL
R1
Vi
R2
+Vcc
B1
Q2
Ci
B2
So snh vi mch OTL v nguyn l
hot ng:
S dng ngun i: +V
CC
/-V
EE.
Ti R
L
c ghp trc tip vi ng ra
ca tng cng sut (M).
Bn k dng ca Vi:Q1 dn, Q2
khng dn i
T1
, i
T2
= 0.
Bn k m ca Vi:Q1 khng dn, Q2
dn i
T2
, i
T1
= 0.
Dng ti: i
L
= i
T1
- i
T2
.
Dng ngun: i
S
= i
T1
+i
T2
.
2.2.2. KCS m tn OCL (tt)
I
P1
-I
P2
I
P1
i
T2
i
T1
Vi
i
L
t
t
t
t
i
S
t
T/2 T 3T/2 2T
I
P2
I
P1 I
P2
n dng ti khng mo
I
P1
= I
P2
= I
P
Hot ng ca 2 transistor
phi i xng Q1Q2 (chn
theo cp),
R
1
= R
2
, R
e1
= R
e2
, V
CC
= V
EE
(ngun i i xng) in th ti
im gia V
M
= 0.
Dng trung bnh ca ngun
cung cp:

P
T
P SAV
I
wtdt I
T
I
2
sin
2
2 /
0
= =

2.2.2. KCS m tn OCL (tt)

Cng sut trung bnh phn phi trn ti P
L
:
L PL
L
PL
PL PL L
R I
R
V
I V P
2
2
2
1
2
1
2
1
= = =
Vi V
PL
, I
PL
l bin in p nh v bin dng
nh ca ti. Gi s V
P
, I
P
l bin p v bin dng
khng mo ng ra ca cc transistor. Ta xt Q1 dn:
I
P
= I
PL
Q1
VpL
Vp
+
-
Re
RL
+
-

+
= =
+
=
L e
P
P PL
P
L e
L
PL
R R
V
I I
V
R R
R
V
L
P
L e
L
L
R
V
R R
R
P
2
2
2
1
|
|

\
|
+
=
2.2.2. KCS m tn OCL (tt)
Cng sut trung bnh phn phi trn ti cc i khi: V
P
= V
pmax
Xt ng ti DCLL:
Q
AB
0
V
CC
L
CC
L e
L
L
R
V
R R
R
P
2
2
max
2
1
|
|

\
|
+
=
Nu chn R
e
<< R
L

( thng chn R
e
= 0.1R
L
):
L
CC
L
R
V
P
2
max
2
1
=
CC P
V V =
max
2.2.2. KCS m tn OCL (tt)
Cng sut trung bnh ca ngun cung cp P
S
:

P
CC SAV CC S
I
V I V P
2
= =
Cng sut trung bnh cc i ca ngun cung cp P
Smax
:
khi ti tiu th cng sut cc i P
Lmax.

max
max
2
max
P
CC S S
I
V P P
L
P
= =
L e
CC
L e
P
P
R R
V
R R
V
I
+
=
+
=
max
max
) (
2
2
max
max
L e
CC
S S
R R
V
P P
L
P
+
= =

2.2.2. KCS m tn OCL (tt)

Cng sut tiu tn ca mt transistor:
L S n dissipatio d tn tiu tt C
P P P P P = = =
) ( ) (
CC
P
L e
L
e L
P
CC
L
P
L e
L
S
L
V
V
R R
R
R R
V
V
R
V
R R
R
P
P
|
|

\
|
+
=
+
|
|

\
|
+
= =
4
2
2
1
2
2

Hiu sut cc i khi P

Lmax
v P
Smax
V
Pmax
= V
CC
B
L e
L
S
L
AB
R R
R
P
P

<
|
|

\
|
+
= =
4
max
max
max
Hiu sut:
2.2.2. KCS m tn OCL (tt)
n u im:
Mch khng dng t xut m nn bng thng ca mch c
m rng tn s thp ting s m hn khc phc nhc
im mch OTL.
Tn hiu ra khng mo xuyn tm.
Hiu sut cao.
n Nhc im:
Mch kh thit k.
Mch s dng ngun i.
Do ti ghp trc tip nn phi c mch bo v qu cng sut,
mch bo v lch im 0 V, mch ng chm ti.
Mt s bi tp yu cu
Bi 1: Hy chn transistor cng sut, in tr n
nh nhit, ngun cung cp cho mch OTL mt
knh c cng sut 16 (W), ti loa 8 (), hiu sut
thit k 0.6.
Bi 2: Hy chn transistor cng sut, in tr n
nh nhit, ngun cung cp cho mch OCL mt
knh c cng sut 20 (W), ti loa 8 (), hiu sut
thit k 0.6.
Bi 3: Cc bi tp 2.19, 2.20, 2.21.
2.3. Vn nng cng sut cho mch KCST
Cng sut trung bnh phn phi trn ti P
L
:
L PL
L
PL
PL PL L
R I
R
V
I V P
2
2
2
1
2
1
2
1
= = =
Nng bin dng qua ti.
Nng bin p trn ti mch ghp transistor
dng cu BTL (Bridge (Balanced) Transistor Line-
out).
Nng bin dng v bin p trn ti.
2.3. Vn nng cng sut cho mch KCST (tt)
Nng bin dng qua ti:
Ghp transistor dng Darlington.
Ghp song song transistor: thng s dng trn thc t.
Q2
R1
R4
D3
R3
D2
Q4
+Vcc
RL
Q3
Ci
D1
Q1
Vi
-Vcc
R2
Q2 R1
R4
R8
D3
R3
R9
D2
Q4
+Vcc
RL
Q3
Ci
R6
R10
D1
Q1
Vi
R5
R7
-Vcc
R2
2.3. Vn nng cng sut cho mch KCST (tt)
Nng bin in p trn ti BTL:
R1
R4
D3
R4
R1
R3
R3
Q1
R2
D3
D2
+Vcc
RL
Q3
-Vi
Ci
D1
Q1
Q3
D1
Vi
D2
Ci
-Vcc
R2
Phi dng mch khuch m o.
Q2 R1
Q4
R4
R8
R6
D3
R4
R1
R3
R3
R9
Q1
R9
R2
D3
D2
R8
Q4
+Vcc
RL
R7
Q3
R10 -Vi
Ci
R6
R10
D1
Q1
Q3
D1
Vi
D2
R5
Ci
R7
-Vcc
R2
Q2
R5
2.3. Vn nng cng sut cho mch KCST (tt)
Nng bin in p v bin dng ti:
Phi dng mch khuch m o.
2.3. Vn nng cng sut cho mch KCST (tt)
Mt s bi tp yu cu:
Bi 1: L lun vic tng cng sut trn ti cho cc dng mch
nng cng sut bng phng php nng dng, nng p, nng
dng v nng p.
Bi 2: Tm hiu nguyn l mch iu chnh m sc, mch
equalizer.
Bi 3: Tm hiu s khi v mch nguyn l ca 1 ampli hon
chnh.
Q & A