Chng 3.

Thit k mch iu khin

3.1. Gii thiu vc khu iu khin cn thit
mch ng lc hot ng th cn c mch iu khin. Trong
mch iu khin gm cc khu sau:
- Khu ng pha: c nhim v to ra in p U
rc
thng gp l in
p rng ca tuyn tnh) trng pha vi in p anod ca Thyristor.
- Khu so snh: nhn tn hiu in p rng ca v in p iu
khin, c nhim v so snh gia in p ta vi in p iu khin U
dk
, tm
thi im vi in p ny bng nhau (U
dk
= U
rc
). Ti thi im hai in p
ny bng nhau th pht xun u ra gi sang tng khuych i.
- Khu to xung: c nhim v to xung ph hp m Thyristor.
Xung m Thyristor cn phi: sn trc dc thng ng m bo
yu cu Thyristor m tc thi khi c xung iu khin; rng; cng
sut; cch ly gia mch iu khin v mch ng lc( khi in p qu ln).
- khu khuych i: vi nhim v to xung ph hp m Thyristor,
tng ny thng c thit k bng Tranzitor cng sut.
3.2. Tnh ton cc khu iu khin
Vic tnh ton mch iu khin thng c tin hnh t tng
khuych i ngc tr ln
Mch iu khin c tnh xut pht t yu cu chung m
Thyristor.
3.2.1. Tnh bin p xung
- Chn vt liu lm bng li thp Ferit HM. Li c dng hnh xuyn,
lm vic trn mt phn ca c tnh t ha c: B = 0,3 T, H = 30 A/m,
khng c khe h khng kh.
- T s bin p xung: thng m = 23, chn m = 3
- in p cun th cp my bin p xung: U
2
= U
dk
= 2,5 V
- in p t ln cun s cp my bin p xung: U
1
= m.U
2
= 3.2,5 =
7 V
- Dng in th cp bin p xung: I
2
= I
dk
= 0,06 A
- Dng in th cp bin p xung: I
1
= I
2
/m = 0,06/3 = 0,02 A
- t thm trung bnh tng i ca li st:
tb
= B/
0
. H = 8.10
3

Th tch ca li thp cn c:
V = Q.L = (
tb.

0
. t
x
. s
x
. U
1
. I
1
)/ B
2

Thay s vo ta c:
V = ( 8.10
3
. 1,25.10
-6
. 100.10
-3
. 0,5. 7. 0,02)/0,3
2
= 3,47.10
-6
m
3
= 0,9
cm
3

Chn mch t OA-25/40-5 c th tch V = Q.l = 0,375.10,2 = 3,38
cm
3
, vi th tch ta c kch thc mch t nh sau:
a = 7,5 mm; b = 5mm; Q = 0,375 cm
3
= 37,5 cm
3
; Q
cs
= 4,9 cm
2
; d =
25 mm; D = 40 mm. Chiu di trung bnh mch t l = 10,2 cm.
S vng qun dy s cp bin p xung:
Theo nh lut cm ng in t:
U
1
= w
1
.Q. dB/dt = w
1
.Q. B/t
x
w
1
= U
1
.t
x
/B.Q = 9.100.10
-3
/0,3.37,5 = 80 vng
S vng dy th cp: W
2
= w
1
/m = 80/3 = 27 vng
Tit din dy qun th cp:
S
1
= I
1
/J
1
= 66,6.10
-3
/6 = 0,0112 mm
2

Chn mt dng in J
1
= 6 (A/mm
2
)
- ng knh dy qun s cp:
mm
S
d 119 , 0
4
1
1
= =
t

Chn d
1
= 0,12mm, S
1
= 0,0113mm
2

Tit din dy qun th cp: S
2
= I
2
/J
2
= 0,2/4 = 0,05mm
2

Chn mt dng in J
2
=4 A/mm
2

ng knh dy qun th cp: mm
S
d 252 , 0
4
2
2
= =
t

Chn dy c ng knh d
2
=0,27 mm, S
2
= 0,0575 mm
2

Kim tra h s lp y:
005 , 0
490
27 . 0572 , 0 80 . 0113 , 0 . .
2 2 1 1
=
+
=
+
=
cs
ld
Q
W S W S
K
Nh vy, ca s din tch cn thit
3.2.2. Tnh tng khuych i cui cng
Chn Tranzitor cng sut Tr
3
loi 2SC9111 lm vic ch xung
c cc thng s:
Tranzitor loi npn, vt liu bn dn Si
in p gia Colecto v Baz khi h mch Emito: U
CBO
= 40 V
in p gia Emito v Baz khi h mch Colecto: U
EBO
= 4 V
Dng in ln nht ca Colecto c th chu ng I
cmax
= 500 mA
Cng sut tiu tn ca Colecto: P
c
= 1,7 W
Nhit ln nht mt tip gip: T
1
= 175
0
C
H s khuych i: = 50
Dng lm vic ca Colecto: I
c3
= 33,3 A
Dng lm vic ca Baz: I
B3
= I
c3
/ = 33,3/50 = 0,66 mA
Chn ngun cp cho bin p xung: E = +12 V ta mc thm in tr
R
10
ni tip vi cc Emito ca Tr
3

R
10
= (E-U
1
)/I
1
= 92
Tt c cc diode trong mch iu khin u dng loi 1N4009 c
tham s:
- Dng in nh mc: I
dm
= 10 A
- in p ngc ln nht: U
N
= 25 V
- in p cho diode m thng: U
m
= 1 V
3.2.3. Chn cng AND
Ton b mch in phi dng 6 cng AND nn ta chn hai IC 4081
h CMOS. Mi IC 4081 c 4 cng NAD, c cc thng s:
Ngun nui IC: V
cc
= (318) V, ta chn: V
cc
= 12 V
Nhit lm vic: -40
0
C80
0
C
in p ng vi logic: "1": 24,5 V
Dng in nh hn 1mA
Cng sut tiu th P = 2,5 mW/1 cng
3.2.4. Chn t C
3
v R
9

in tr R
9
dng hn ch dng a vo Baz ca Tranzitor Tr
3
,
chn R
9
tha mn diu kin:
O = = >

k
I
U
R
b
6
10 . 2
12
3
3
9

Trong :
U = 12 V; I
b3
= 2mA< 10mA
Chn C
3
.R
9
= t
x
=100. Suy ra C
3
= t
x
/R
9

C = 100/6,8.10
3
= 0,014F. Chn C
3
= 0,0 F
3.2.5. Tnh chn b to xung chm
Mi knh iu khin phi dng 4 khuych i thut ton, do ta
chon 6 IC loi TL084 do hng Texas Instruments ch to, mi IC ny c 4
khuych i thut ton. Thng s c TL048:
in p ngun nui: V
cc
= 18 V, chn V
cc
= 12 V
Hiu in th gia hai u vo: 30 V
Nhit lm vic: T = -2585
0
C
Cng sut tiu th: P = 680 mW = 0,68 W
Tng tr u vo: R
in
= 10
6
M
Dng in u ra: I
ra
= 30 pA
Tc bin thin in p cho php: du/dt = 13 V/s
Mch to chm xung c tn s: f
x
= 1/2t
x
= 1/2.100 = 5 kHz hay tru k
ca xung trm.
T = 1/f = 200 s; ta c : T = 2.R
8
C
2
.ln( 1+2.R
8
/R
7
)
Chn R
6
= R
7
= 33 k th T = 2,2.R
8
.C
2
= 200 s
Vy: R
8
.C
2
= 90 s
Chn t C
2
= 0,1 F c in p U = 16 V; R
8
= 0,9.
m thun tin cho vic iu chnh khi lp mch th ta chn R
8
l
bin tr 1 k.
3.2.6. Tnh chn tng so snh
Khuych i thut ton chn loi TL084
Trong nu ngun nui V
cc
= 12 V. Th in p vo A
3
l U
v
= 12
V.
Dng in vo c hn ch I
lv
< 1 mA
Chn R
4
= R
5
> U
v
/I
v
= 12/1.10
-3
= 12 k
Do ta chn R
4
= R
5
= 15 k khi c dng vo A
3
:
I
vmax
= 12/(15.10
9
) = 0,8 mA
3.2.7. Tnh chn khu ng pha
in p t c hnh thnh do s np ca t C
1
, mt khc m
bo in p t c trong mt na chu k in p li l tuyn tnh th hng
s thi gian t np c T
r
= R
3
.C
1
= 0,005s.
Chn t C
1
= 0,1 s th in tr R
3
= T
r
/C
1
= 0,005/0,1.10
-6

Vy R
3
= 50.10
3
= 50 k
thun tin ch iu chnh khi lp rp mch R
3
, thng chn l bin
tr ln hn 50 k chn Tranzito Tr
1
loi A564 c cc thng s:
Tranzito loi NPN lm bng Si
in p gia Colecto v Baz khi h mch Emito: U
CBO
= 25 V
in p gia Emito v Baz khi h mch Colecto: U
EBO
= 7 V
Dng in ln nht ca Colecto c th chu ng I
cmax
= 100 mA
Nhit ln nht mt tip gip: T
cp
= 150
0
C
H s khuych i: = 250
Dng cc i ca Baz: I
B3
=I
c
/ = 100/250 = 0,4 mA
in tr R
2
hn ch dng in i vo Baz Tranzito Tr
1
c
chn nh sau:
Chn R
2
tha mn iu kin: R
2
> U
Nmax
/I
B
= 12/0,4.10
-3
= 30 k
Chn R
2
= 30 k
Chn in p xoay chiu ng pha: U
A
= 9 V
in tr R
1
hn ch dng in khuych i thut ton A
1
, thng
chn R
1
sao cho dng vo khuych i thut ton I
V
< 1 mA. Do :
R
1
> U
A
/I
V
= 9/1.10
-3
= 9 k. Chn R
1
= 10 k
3.2.8. To ngun nui
Thit k my bin p dng cho c vic to in p ng pha v to
ngun nui, chn kiu bin p 3 pha 3 tr, trn mi tr c 5 cun dy, mt
cun s cp v bn cun th cp.
Cun th cp th nht
Cu to ra ngun in p 12 V cp cho nui IC, cc b iu
chnh dng in, tc v in p t tc . Ngun ny c cp bi ba
cun dy th cp.
Hai chnh lu tia 3 pha to in p ngun nui i xng cho IC.
in p u ra ca n p chn 12V. in p vo ca IC n p chn 20V.
in p th cp cc cun chn l:
V U 18 , 14
2
20
21
= =
Chn U
21
= 14V
n nh in p ra ca ngun nui ta dng 2 vi mch n p 7812
v 7912, cc thng s chung ca vi mch ny nh sau:
in p u vo: U
V
= 735 V
in p u ra: IC 7812 c U
ra
= 12V
IC 7912 c U
ra
= -12V
Dng in u ra: I
ra
= 01 A
T in C
1
, C
2
dng lc phn song hi bc cao.
Chn t C
1
= C
2
= C
3
= C
4
= 470 F; U = 35 V
Cun th cp th 2: To ngun nui cho bin p xung, cp xung iu
khin cho cc Thyristor + 12V. Do mc st xung cho php tng i
ln ln ngun ny khng cn n p. Mi khi pht xung iu khin cng
sut xung ng k, nn cn to cun dy ny ring r vi cun dy cp
ngun IC, trnh gy st p ngun nui IC.
Cun th cp th 3,4 l cc cun dy ng pha. Cc cun dy ny
cn ly trung thc in p hnh sin ca li, tt nht nn qun bin p
ring. Tuy nhin, theo kinh nghim c th qun chung vi bin p ngun
nui cng c th c. 3.2.9. Tnh ton my bin p ngun nui v
ng pha
1) in p ly ra th cp cun dy ngun nui IC: U
21
= 14V
2) Cng sut tiu th 6 IC TL084 s dng lm khuych i thut
ton ta chn hai IC TL084 to 6 knh iu khin v 2 cng AND.
P
IC
= 8.0,68 = 5,12 W
3) Cng sut BAX cp cho cc iu khin Thyristor
P
x
= 6.U
NX
.I
dk
= 6.3.0,2 = 3,6 W
4) in p ba pha th cp cun dy ngun nui bin p xung
V U 91 , 4
3 2
12
22
= = ; chn 5V
5) in p ly ra th cp cun dy ng pha U
3,4
= 5V
6) Dng in chy qua cun dy ng pha chn 10mA
7) Cng sut cc cun dy ng pha
P
df
= 6. U
df
.I
df
= 6.50.0,1 = 0,3 W
8) Cng sut s dng cho vic to ngun nui
P
N
= P
df
+ P
IC
+ P
x

P
N
= 0,3 + 5,12 + 3,6 = 9,02 W
9) Cng sut ca my bin p c k n 5% tn tht trong my:
S = 1,05.P
N
= 1,05.9,02 = 9,471 VA
10) Dng in s cp my bin p:
I
1
= S/3.U
1
= 9,471/3.220 0,01435 A
11) Tit din tr ca my bin p c tnh theo cng thc:

2
51 , 1
50 . 3
471 , 9
. 6
.
cm
f m
S
k Q
Q t
= = =
Ta chn chun ha tit din tr theo bng
Q
t
= 1,63 cm
2

Kch thc mch t l thp dy = 0,5 mm
S lng l thp: 68 l
a = 12 mm
b = 16 mm
h = 30 mm
h s p cht k
c
= 0,85
12) Chn mt t cm B= 1T tr ta c s vng dy s cp:
6080
. . . 44 , 4
1
1
= =
T
Q B f
U
W vng
13) Chn mt dng in J
1
= I
2
= 2,75 A/mm
2

14) Tit din dy qun s cp:
W
11
= 0,0052 mm
2

15) ng knh dy s cp:
W
12
= 0,081 mm
16) S vng dy qun th cp W
21

940
220
34
. 6080 .
1
2
1 21
= = =
U
U
W W vng
17) S vng dy qun th cp W
22

135
220
91 , 4
. 6080 .
1
22
1 22
= = =
U
U
W W vng
18) S vng dy qun th cp W
23

138
220
5
. 6080 .
1
23
1 23
= = =
U
U
W W vng
19) ng knh dy qun cc cun th cp v kch thc nh
khng ng k chn 0,26 mm.
Cc thng s cn li ca bin p ngun nui c tnh nh gii
thiu
20) Tnh chn diode cho b chnh lu ngun nui:
- Dng in hiu dng qua diode:
A
I
I
IC
DHD
123 , 0
12 , 2
12 , 5
.
3
1
3
= ~ =


- in p ngc ln nht m diode phi chu:
V U U
N
3 , 34 14 . 45 , 2 . 6
21 max
= = =
- Chn diode c in p ngc ln nht:
U
n
= k
u
.U
Nmax
= 2.34,3 = 68,6 V
Chn diode loi KII208A c cc thng s:
- Dng in nh mc: I
dm
= 1,5 A
- in p ngc cc i ca diode: U
N
= 100 V
3.3. Ghp ni thnh s hon chnh