Chng 10:

Phn cc tranzito bng dng emit

(t phn cc) Mch phn cc tranzito bng dng emit c dng nh hnh 2.42. in R1, R2 to thnh mt b phn p c nh to UB t vo Baz tranzito t in p ngun ECC. in tr RE mc ni tip vi cc emit ca tranzito c in p ri trn n l UE = IERE Vy: (2-76) Nu tha mn iu kin IE = (UB UBE)/RE UB UBE th IE UBE/RE

(2-77) v rt n nh. tin cho vic phn tch tip theo c th v s tng ng ca hnh 2.42 nh hnh 2.43 bng cch p dng nh l Tevenin trong : RB = R1. R2 R1 + R2 R1. Ecc R1 + R2 (2-78)

UB =

(2-79)

Hnh 2.42: Phn cc bng dng IE Hnh 2.43: S tng ng tnh Vn y l phi chn R1 v R2 th no m bo cho UB n nh. T hnh 2.42 thy r phi chn R1 v R2 sao cho RB khng ln hn nhiu so vi RE, nu khng s phn cc ca mch li tng t nh trng hp phn cc dng c nh. c UB n nh cn chn R1 v R2 cng nh cng tt, nhng m bo cho in tr vo ca mch ln th R1 v R2 cng ln cng tt. dung ha hai yu cu mu thun ny trong thc t thng chn RB= RE.

Cn c vo s tng ng (h.2.43) phn tch mch phn cc dng emit. Tng in p ri trong mch baz bng: UB= IBRB + UBE + (IC + IB)RE (280) Trong thay IE = IC + IB nu nh bit h21e c th bin i (2-80) thnh UB = IB[ RB+(h21e + 1)RE] + UBE + ICO(h21e + 1) . RE (2-81) Trc khi phn tch hy ch l in p UBE trong trng hp phn cc ny khng th b qua nh nhng trng hp khc. Trong qu trnh lm vic chuyn tip emit lun phn cc thun cho nn tng in p mt chiu u vo ca mch ny l UB. Trong hu ht cc trng hp UB nh hn ECC nhiu ln. Trc y c th b qua UBE v n qu nh so vi ECC , nhng trong trng hp ny UBE ln vo c UB cho nn khng th b qua c. S hng cui cng trong (2-81) cha ICO thng c b qua v trong thc t dng ngc rt nh (vi tranzito silic dng ny ch c vi nano ampe ). Cng t s tng ng hnh 2.43 c in p gia emit v t bng IE. RE. Dng emit IE = IC + IB = (h21e +1)IB (b qua c dng ngc ICO). Nh vy in p gia emit v t c th vit UE = (h21e +1)IB.RE. i lng (h21e +1) l i lng khng th nguyn nn c th lin h vi IB to thnh dng (h21e + 1) hoc lin hp vi RE to thnh in tr (h21e +1)IB. Nu quan nim nh vy th c th ni rng in p gia emit v t l in p do dng (h21e +1)IB ri trn in tr RE hay do dng IB ri trn in tr (h21e+1)RE. Nu thnh phn in p gy ra bi ICO trong biu thc (281) c th b qua th biu thc ny c th minh ha bng s tng ng hnh 2.44. y in tr RE - trong nhnh emit bin thnh in tr (h21e +1)RE trong mch baz. Mt cch tng qut, bt k mt in khng no trong mch emit u c th bin i sang mch baz bng cch nhn n vi (h21e +1). T hnh 2.44 v biu thc (2-81) c th tm thy dng baz ti im phn cc. UB UBE IBQ = (2-82) RB + (h21e + 1)RE T tnh ra c ICQ = h21e.IBQ (283) T s tng ng hnh 2.44 trong mch colect c
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th vit : ECC = IC.Rt + UE + IERE (2-86) Bit rng IC thng ln hn IB rt nhiu ln cho nn y c th b qua thnh phn in p do IB gy ra trn RE. Nh vy (2-86) c vit thnh : ECC = (Rt + RE). IC + UCE (2-87)

Hnh 2.44: S tng ng mch Bc Biu thc (2-87) chnh l biu thc ng ti tnh ca mch phn cc bng dng emit. Nu dng ECQ v UCEQ l dng in v in p ng vi im cng tc tnh th c th vit (287) thnh dng : UECQ = Ecc - (Rt + RE). ICQ (288) Cn c vo biu thc (2-88) c th tnh c iu kin phn cc tnh ca tranzito khi bit h s khuch i h21e v loi tranzito. Sau y xt n nh nhit ca mch phn cc bng dng emit, c th vit li (280) dng : IC = U B - U BE - + R E ) I B (R B RE Do U U R B B IB = I E B C RB + R E RB + R E

(2-89)

Ly o hm ring biu thc ny theo Ic v mt ln na ch rng UBE khng i s c : IB R 1 = E = (2-90) IE RB + REk 2 Theo nh ngha ca h s n nh nhit th trong trng hp ny:
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h +1 S= 21e 1+ (h21e k 2 )

(2-91)

T (2-91) thy rng h s n nh nhit tin ti cc tiu ( n nh cao nht) khi k2 c gi tr nh nht. iu y c ngha l cho mch n nh, phi thit k sao cho RE c gi tr cng ln cng tt, v gi tr RB cng nh cng tt. H s k2 khng bao gi nh hn 1, gi tr ny ch dn ti 1 (ng vi trng hp RE rt ln v RB rt nh ) t suy ra rng h s n nh S ch c th gim nh ti gii hn l 1. Mt nhn xt quan trng na l h s n nh S khng ph thuc vo Rt ngha l khng ph thuc vo im cng tc.

Hnh 2.45:Dng t ngn hi tip m trn Re b) Ngn mch mt a) Ngn mch hon ton phn

Hnh 2.46: Dng it b nhit

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 trn ni vn nng cao n nh nhit ca loi mch ny bng cch tng RE v gim RB. Bn cht ca s n nh nhit trong loi mch ny chnh l dng phn hi m qua in tr RE. Tng RE c ngha l tng phn hi m do lm gim tn hiu khuch i xoay chiu ca mch. khc phc mu thun ny trong thc t c th dng hai mch nh hnh 2.45a,b. Dng kiu mch ny c th loi tr hoc gim nh tc dng phn hi m i vi tn hiu xoay chiu (xem phn 2.3), do khng lm gim h s khuch i tn hiu xoay chiu ca mch. Gi tr CE phn m ch y phi chn ln sao cho i vi tn hiu xoay chiu th tr khng ca n gn nh bng 0, ngc li vi dng mt chiu th coi nh h mch. Thc t thng gp trng hp phi thit k mch phn cc khi bit cc iu kin phn cc cng nh h s khuch i ca tranzito. nhng phn trn ch xt nh hng ca nhit n dng ICO. Sau y s trnh by nh hng ca nhit n dng UBE v h s khuch i h21e. i vi c hai loi tranzito, lm t silic v gecmani, khi nhit tng UBE gim, cn h21e li tng. nh hng ca nhit n cc tham s ca tranzito silic cng tc trong khong 65C n +175C cn tranzito th t -63C n +75C. S khc nhau na l tr s ICO v UBE ca tranzito silic v tranzito gecmani bin thin ngc nhau khi nhit thay i. Bng (2-4) lit k nhng gi tr in hnh ca ICO, UBE v h21e ca tranzito silic v gecmani nhng nhit khc nhau. Bng 2 4 Gi tr in hnh ca mt tham s chu nh hng ca nhit Vt liu lm tranzito Si G e Si ICO(A) 10 6 10 3 10 UBE(V) 0. 8 0. 4 0. 6 h2 20 15 50 50 t, C 6.5 6.5

+2 10 5 G 0 2 T bng 2- 4 c nhn xt: nhit phng i vi tranzito silic ICO ch c nano ampe, cho nn nu c thay i th cng khng nh hng ng k n IC v nh hng ca nhit n im cng tc tnh ca tranzito ch yu thng qua UBE. khc phc nh hng ny trn thc t thng mc ni tip emit mt it silic phn cc thun c chiu ngc vi chuyn
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tip emit nh hnh 2.46. Bng cch mc nh vy c th thy rng s thay i in p thun trn 2 cc it c th b tr s bin i UBE ca tranzito do nhit gy ra. it b nhit s ny lun c phn cc thun bi ngun EDD cho nn in tr thun ca n rt nh. S ny hon ton tng ng vi s phn cc bng dng emit xt phn trn. i vi tranzito gecmani th ngc li, ti nhit phng ICO kh ln cho nn khi nhit thay i nh hng ca dng ICO n tham s ca tranzito chim u th. n nh nhit

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 cho s , ngi thit k phi ch ch yu n vic gim h s n nh nhit S. Qua bng (2-4) trn y c th thy rng h s khuch i dng h21e ph thuc vo rt nhiu vo nhit . Hn na ngay cng mt nhit , tranzito c cng loi k hiu (c ch to nh nhau) nhng h s h21e ca tng chic c th hn km nhau vi ba ln. Nh bit h s h21e nh hng nhiu n im cng tc tnh ca tranzito. Bi vy n nh im cng tc tnh, ngi thit k phi ch n s thay i h s h21e c th c ca loi tranzito dng trong mch in. nh lng s ph thuc ca IC vo h21e, gi thit rng cc gi tr ca UCC v Rt bit h s khuch i dng ca tranzito bin thin t h21e1 n h21e2 b qua ICO (gi IC1 l dng ng vi trng hp h s khuch i h21e1 v IC2 ng vi h21e2) tnh c : U B UBE IC1 = h21e1 RB + (2-92) (h21e1 + 1)RE U B UBE IC2 = h21e2 RB + (2-93) (h21e1 + 1)RE Ly hiu s ca (2-92) v (2-93), c: (U B U BE h e1 )( RB (2-94) )(h21e 2 +21 RE ) IC = [RB + + ][R + + 1) RE ] (h21e1) REB ( h21e 1 2 em chia biu thc (2-94) cho (2-92) s c biu thc cho s bin thin tng i ca dng IC. IC h21e1 (2-95) h 21e2 = IC1 h2 (1 h21e1.RE ) 1e + 1 RB + RE Nhn xt biu thc (2-95) thy n c cha s hng gn ging nh biu thc nh ngha v s n nh S; c th bin i v phi ca (2-95) thnh:
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h +1 I h hC 21e 2 21e1 = (2-96) 21e 2 . IC1 h21e1(h2 (1+ h21e2 )K 1e2 + 1) Nu gi S2 l n nh nhit khi h21e = h21e1, th (2-95) c th vit thnh : I C h .S = 21e (2-97) 2 IC1 h21e1(h21e1 + 1) Trong h21e = (h21e2 h21e1) thng gi l sai lch ca h21e. Biu thc (2-97) cho thy s bin i dng colect ph thuc trc tip vo sai lch h s khuch i h21e k trn. Ngoi ra biu thc ny cn cho php ngi thit k tnh c gi tr ca in tr cn thit gi cho dng IC bin i trong mt phm vi nht nh khi h21e thay i.

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2.2.4. Tranzito trng (FET) Khc vi tranzito lng cc xt phn trn m c im ch yu l dng in trong chng do c hai loi ht dn (in t v l trng t do) to nn, qua mt h thng gm hai mt ghp p-n rt gn nhau iu khin thch hp, tranzito trng (cn gi l tranzito n cc FET) hot ng da trn nguyn l hiu ng trng, iu khin dn in ca n tinh th bn dn nh tc dng ca 1 in trng ngoi. Dng in trong FET ch do mt loi ht dn to ra. Cng ngh bn dn, vi in t cng tin b, FET cng t r nhiu u im quang trng trn hai mt x l gia cng tn hiu vi tin cy cao v mc tiu hao nng lng cc b. Phn ny s trnh by tm tt nhng c im quang trng nht cu FET v cu to, nguyn l hot ng v cc tham s c trng i vi hai nhm chng loi: FET c cc ca l tip gip p-n (JFET) v FET c cc ca cch li (MOSFET hay IGFET). a- Tranzito trng c cc ca tip gip (JFET) - Cu to v k hiu qui c: D Drain GGate G ip S Source D Knh n S D G+ Knh p S

Hnh 2.47: Cu tp JFET v k hiu quy c Hnh 2.47a a ra mt cu trc JFET kiu knh n: trn tinh th bn dn Si-n ngi ta to xung quanh n 1 lp bn dn p (c tp cht nng cao hn so vi ) v a ra 3 in cc l cc ngun S (Source), cc mng D (Drein) v cc ca G (Gate). Nh vy hnh thnh mt knh dn in loi n ni gia hai cc D v S, cch li vi cc ca G (dng lm in cc iu khin) bi 1 lp tip xc p-n bao quanh knh dn. Hon ton tng t, nu xut pht t bn dn loi p, ta c loi JFET knh p vi cc k hiu quy c phn bit cho trn hnh 2.47b. Nguyn l hot ng: phn cc JFET, ngi ta dng hai ngun in p ngoi l UDS > 0 v UGS < 0 nh hnh v (vi
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knh P, cc chiu in p phn cc s ngc li, sao cho tip gip p-n bao quanh knh dn lun c phn cc ngc). Do tc dng ca cc in trng ny, trn knh dn xut hin 1 dng in (l dng in t vi knh n) hng t cc D ti cc S gi l dng in cc mng ID. Dng ID c ln tu thuc vo cc gi tr UDS v UGS v dn in ca knh ph thuc mnh c hai in trng ny. Nu xt ring s ph thuc ca ID vo tng in p khi gi cho

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in p cn li khng i (coi l mt tham s) ta nhn c hai h hm quan trng nht ca JFET l : ID = GS = const f1(UDS)U = const ID = GS f2(UGS)U

ID mA 10 UGS= 0V UGS= -1V T Ung DS UGS= 2V UDS = 10V ID mA 8 4 UDS V -4 -2 UG S0 UGS V

10 Hnh 2.48: H c tuyn ra v c tuyn truyn t

Biu din f1 ng vi vi gi tr khng i ca UGS ta thu c h c tuyn ra ca JFET. ng biu din f2 ng vi mt gi tr khng i ca UDS cho ta h c tuyn truyn t ca JFET. Dng in hnh ca cc h c tuyn ny c cho trn hnh 2.48 a v b. c tuyn ra ca JFET chia lm 3 vng r rt: - Vng gn gc, khi UDS nh, ID tng mnh tuyn tnh theo UDS v t ph thuc vo UGS. y l vng lm vic JFET ging nh mt in tr thun cho ti lc ng cong b un mnh (im A trn hnh 2.48 a ng vi ng UGS = 0V).
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- Vng ngoi im A c gi l vng tht (vng bo ho) khi UDS ln, ID ph thuc rt yu vo UDS m ph thuc mnh vo UGS. y l vng JFET lm vic nh mt phn t khuch i, dng ID c iu khin bng in p UGS. Quan h ny ng cho ti im B. - Vng ngoi im B gi l vng nh thng, khi UDS c gi tr kh ln, ID tng t bin do tip gip p-n b nh thng thc l xy ra ti khu vc gn cc D do in p ngc t ln tip gip p-n ti vng ny l ln nht. Qua th c tuyn ra, ta rt ra my nhn xt sau:

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- Khi t tr s UGS m dn, im un A xc nh ranh gii hai vng tuyn tnh v bo ho dch gn v pha gc to . Honh im A (ng vi 1 tr s nht nh ca UGS) cho xc nh 1 gi tr in p gi l in p bo ho cc mng UDS0 (cn gi l in p tht knh). Khi UGS tng, UDS0 gim. - Tng t vi im B: ng vi cc gi tr UGS m hn, vic nh thng tip gip p-n xy ra sm hn, vi nhng gi tr UDS nh hn. c tuyn truyn t ca JFET (h.2.48b) ging ht cc c tuyn anot-li ca n 5 cc chn khng, xut pht t 1 gi tr UGS0, ti ID = 0, gi l in p kho (cn k hiu l UP). ln UGS0 bng UDS0 ng vi ng UGS = 0 trn h c tuyn ra. Khi tng UGS, ID tng hu nh t l do dn in ca knh tng theo mc gim phn cc ngc ca tip gip p-n. Lc UGS = 0, ID = ID0 . Gi tr ID0 l dng tnh cc mng khi khng c in p cc ca. Khi c UGS < 0, ID < ID0 v c xc nh bi ID = ID0 (1- UGS / UGS0)2 (2-98a)

C th gii thch tm tt cc c tuyn ca JFET bng gin cu to hnh 2.49 trong 3 trng hp khc nhau ng vi cc gi tr ca UGS v UDS. Khi UGS c gi tr m tng dn v UDS = 0, b rng vng ngho ca chuyn tip p-n rng dn ra, ch yu v pha knh dn n v tp cht pha yu hn nhiu so vivng p, lm knh dn b tht li u dc theo phng DS (h.2.49a). Ngc li khi cho UGS = 0 v tng dn gi tr ca in p mng ngun UDS , knh b co li khng u v c hnh phu, pha cc D tht mnh hn do phn b trng dc theo knh t D ti S, cho ti lc UDS = UDS0 knh b tht li ti im A. Sau , tng UDS lm im tht A dch dn v pha cc S (h.2.49b). Qu trnh trn s xy ra sm hn khi c thm UGS < 0 nh hnh 2.49c lm gi tr in p tht knh gim nh. R rng dn in ca knh dn ph thuc c hai in p UGS v UDS, cn sau khi c hin tng tht knh, dng cc mng do cc ht dn (in t) phun t knh qua tip gip p-n ti cc mng ph thuc yu vo UDS v ph thuc ch yu vo tc dng iu khin ca UGS ti chuyn tip p-n phn cc ngc, qua ti dng in cc mng ID.

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Hnh 2.49a: Gii thch vt l c tuyn ca JFET trn cu trc 3D

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Hnh 2.49b: Gii thch vt l c tuyn ca JFET trn cu trc 2D - Cc tham s ch yu ca JFET gm hai nhm: Tham s gii hn gm c: Dng cc mng cc i cho php IDmax l dng in ng vi im B trn c tuyn ra (ng ng vi gi tr UGS = 0) ; Gi tr IDmax khong 50mA; in p mng - ngun cc i cho php v in p ca ngun UGSmax UDSmax = UB/(1,2 l,5) (c vi chc Vn)
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 y UB l in p mng ngun ng vi im B. in p kha UGSO (hay Up) (bng gi tr UDSO ng vi ng UGS = 0)

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Tham s lm vic gm c: in tr trong hay in tr vi phn u ra ri = UDS/ID |UGS = const (c 0,5 M) ri th hin dc ca c tuyn ra trong vng bo ha. H dn ca c tuyn truyn t: I S = D | UDS = const UGS cho bit tc dng iu khin ca in p cc ca ti dng cc mng, gi tr in hnh vi JFET hin nay l S = (7 - 10)mA/V. Cn ch gi tr h dn S t cc i S = So lc gi tr in p UGS ln cn im 0 (xem dng c tuyn truyn t ca JFET hnh 2.48b) v c tnh bi So = 2IDO/UGSO. in tr vi phn u vo: U =G rvo S I G r vo do tip gip p-n quyt nh, c gi tr khong 109. tn s lm vic cao, ngi ta cn quan tm ti in dung gia cc cc CDS v CGD (c pf). b - Tranzito trng c cc ca cch li (MOSFET) - Cu to v k hiu quy c: c im cu to ca MOSFET c hai loi c bn c th hin trn hnh 2.50a v 2.50b. K hiu quy c ca MOSFET trong cc mch in t c cho trn hnh 2.51 a, b, c v d. Trn nn l n tinh th bn n tp cht loi p (Si-p), ngi ta pha tp cht bng phng php cng ngh c bit (plana, Epitaxi hay khuch tn ion) to ra 2 vng bn dn loi n+ (nng pha tp cao hn so vi ) v ly ra hai in cc l D v S. Hai vng ny c ni thng vi nhau nh mt knh dn in loi n c th hnh thnh ngay trong qu trnh ch to (loi knh t sn hnh 2.50a) hay ch hnh thnh sau khi c 1 in trng ngoi (lc lm vic trong mch in) tc ng (loi knh cm ng - hnh 2.50 b). Ti phn i din vi knh dn, ngi ta to ra in cc th ba l cc ca G sau khi ph ln b mt knh 1 lp cch in mng SiO2. T MOSFET cn c tn l
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loi FET c cc ca cch li (IGFET). Knh dn c cch li vi nh tip gip pn thng c phn cc ngc nh 1 in p ph a ti cc th 4 l cc .

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Hnh 2.50: Cu to MOSFET a) Loi knh t sn; b) Loi knh cm ng

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