chng 11:

Nguyn l hot ng v c tuyn VonAmpe

phn cc MOSFET ngi ta t 1 in p UDS > 0. Cn phn bit hai trng hp: Vi loi knh t sn, xut hin dng in t trn knh dn ni gia S v D v trong mch ngoi c dng cc mng ID (chiu i vo cc D), ngay c khi cha c in p t vo cc ca (UGS = 0). Nu t ln cc ca in p UGS > 0, in t t do c trong vng (l ht thiu s) c ht vo vng knh dn i din vi cc ca lm giu ht dn cho knh, tc l lm gim in tr ca knh, do lm tng dng cc mng ID. Ch lm vic ny c gi l ch giu ca MOSFET. Knh t sn Knh N Knh cm ng

Knh P Hnh 2.51: K hiu quy c ca MOSFET Nu t ti cc ca in p UGS < 0, qu trnh trn s ngc li, lm knh dn b ngho i do cc ht dn (l in t) b y xa khi knh. in tr knh dn tng ty theo mc tng ca
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UGS theo chiu m s lm gim dng ID. y l ch ngho ca MOSFET.

Nu xc nh quan h hm s ID = F3(UDS) ly vi nhng gi tr khc nhau ca UGS bng I thuyt thay thc nghim, ta thu c h c tuyn ra ca MOSFET loi knh n t sn nh trn hnh v 2.52.

Hnh 2.52: c tuyn ra ca MOSFET Vi loi knh cm ng, khi t ti cc ca in p UGS < 0, khng c dng cc mng (ID = 0) do tn ti hai tip gip p-n mc i nhau ti vng mng - v ngun - , do khng tn ti knh dn ni gia mng - ngun. Khi t UGS > 0, ti vng i din cc ca xut hin cc in t t do (do cm ng tnh in) v hnh thnh mt knh dn in ni lin hai cc mng v ngun. dn ca knh tng theo gi tr ca UGS do dng in cc mng ID tng. Nh vy MOSFET loi knh cm ng ch lm vic vi 1 loi cc tnh ca UGS v ch ch lm giu knh. Biu din quan h hm ID= F4(UDS), ly vi cc gi tr UGS khc nhau, ta c h c tuyn ra ca MOSFET knh n cm ng. T h c tuyn ra ca MOSFET vi c hai loi knh t
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sn v knh cm ng ging nh c tuyn ra ca JFET xt, thy r c 3 vng phn bit: vng gn gc ID tng tuyn tnh theo UDS v t ph thuc vo UGS, vng bo ha (vng tht) lc ID ch ph thuc mnh vo UGS, ph thuc yu vo UDS v vng nh thng lc UDS c gi tr kh ln. Gii thch vt l chi tit cc qu trnh iu ch knh dn in bng cc in p UGS v UDS cho php dn ti cc kt lun tng t nh i vi JFET. Bn cnh hin tng iu ch dn in ca knh cn hin tng m rng vng ngho ca tip

gip p-n gia cc mng - khi tng dn in p UDS. iu ny lm knh dn c tit din hp dn khi i t cc ngun ti cc mng v b tht lai ti 1 im ng vi im un ti ranh gii hai vng tuyn tnh v bo ha trn c tuyn ra. in p tng ng vi im ny gi l in p bo ha UDSO (hay in p tht knh). Hnh 2.53d v e l ng biu din quan h lD = f5(UGS) ng vi mt gi tr c nh ca UDS vi hai loi knh t sn v knh cm ng, c gi l c tuyn truyn t ca MOSFET.

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Hnh 2.53: c tuyn truyn t ca MOSFET Cc tham s ca MOSFET c nh ngha v xc nh ging nh i vi JFET gm c: h dn S ca c tnh truyn t, in tr trong ri ,in tr vo rv v nhm cc tham s gii hn: in p kha UGSO (ng vi 1 gi tr UDS xc nh), in p tht knh hay in p mng - ngun bo ha UDSO (ng vi UGS = 0) dng IDmaxCf, UDSmaxCF.

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Khi s dng FET trong cc mch in t, cn lu ti mt s c im chung nht sau y: - Vic iu khin in tr knh dn bng in p UGS trn thc t gn nh khng lm tn hao cng sut ca tn hiu, iu ny c c do cc iu khin hu nh cch li v in vi knh dn hay in tr li vo cc ln (109 1013 so vi loi tranzito bipolal dng in d u vo gn nh bng khng, vi cng ngh CMOS iu ny gn t ti l tng. Nhn xt ny c bit quan trng vi cc mch in t analog phi lm vic vi nhng tn hiu yu v vi mch in t digital khi i hi cao v mt tch hp cc phn t cng vi tnh phn ng nhanh v chi ph nng lng i hi thp ca chng. - a s cc FET c cu trc i xng gia 2 cc mng (D) v ngun (S). Do cc tnh cht ca FET hu nh khng thay i khi i ln vai tr hai cc ny. - vi JFET v MOSFET ch ngho, dng cc mng t cc i ID IDmax, lc in p t vo cc ca bng khng UGS = 0. Do vy chng c gi chung l h FET thng m. Ngc li, vi MOSFET ch giu, dng ID =0 lc UGS = 0 nn n mi c gi l h FET thng kho. Nhn xt ny c ngha khi xy dng cc s kho ( mch lgic s ) da trn cng ngh MOS. -Trong vng gn gc ca h c tuyn ra ca FET khi UDS 1,5V, dng cc mng ID t l vi UGS. Lc , FET tng ng nh mt in tr thun c gi tr thay i c theo UGS. Dng ID cng nh khi khi UGS cng m vi loi knh n, hoc ngc li ID cng nh khi UGS > 0 cng nh vi loi knh p. Hnh 2.54 m t h c tuyn ra ca FET trong vng gn gc. I D UGS

UDS
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Hnh 2.54a: c tuyn ra vng gn gc

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Hnh 2.54b: Dng ng v MOSFET trong thc t S dng tnh cht ny ca FET, c th xy dng cc b phn p c iu khin n gin nh hnh 2.55. rDS U Khi h s chia p l: r = (2-98b) (UdK ) a Uv R + rDS = (UdK ) ao ph thuc vo in p iu khin UdK, thng chn R>> rDS0 di rng. Lu l khi UDS > 1V tnh cht tuyn tnh gia ID v UDS( vi cc UGS khc nhau ) khng cn ng na. Nu s dng c vng xa gc hn 1V, cn tuyn tnh ho theo mch hnh 2.55b. in tr R2 a mt phn in p UDS ti cc ca b sung cho UGS b li phn cong ca rDS. Khi chn R2= R3 >> rDS th UGS =
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1 (U

(2-99) 2 v h c tuyn ra c tuyn tnh ho trong mt on UDS t 1V ti 1,5V. dK + UDS)

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Hnh 2.55: Nguyn l b phn p c iu khin dng JFET -Tng t nh vi tranzito lng cc, tn ti 3 kiu mc FET trong cc mch khuch i l mng chung MC, ngun chung NC v ca chung. Tuy nhin mch ca chung rt t gp trong thc t. Hai dng MC v NC cho trn hnh 2.56 vi cc tham s tm tt ca tng loi trong ngha l mt tng khuch i in p (xem thm mc 2.3). Mch ngun chung 1 Ku = 1 + [S ( R // r )] S DS Rvo= rGS Rra= (2-100) cc nh cc nh Mch mng chung Ku = -S(RD//rDS) = -SRD Rvo= rGS Rra = RS//(1/S) (2-101)

H s khuch i in p in tr vo in tr ra

-Khi thay th cc FET knh n bng loi FET knh p trong mch in, cn thay i cc tnh cc in p ngun cng cc tnh cc it v t ho c s dng trong . Lc chc nng ch yu ca mch khng thay i, cng ging vi hai loi tranzito lng cc npn v pnp tng ng xt.
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Hnh 2.56: Nguyn l mch Sc v Dc

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