Chng 14:

Khuch i dng tranzito trng (FET)

Nguyn l xy dng tng khuch i ng tranzito trng cng ging nh tng dng tranzito lng cc, im khc nhau l tranzito trng iu khin bng in p. Khi chn ch tnh ca tng dng tranzito trng cn a ti u vo (cc ca) mt in p mt chiu c tr s v cc tnh cn thit. a - Khuch i cc ngun chung (SC)

Hnh 2.71a: S tng khuch i cc ngun chung (SC)

ID mA IDmax d D

PDmax

ID0

UGS

UPmax UDS0 C UDS V

Hnh 2.71b: th xc nh ch tnh ca tng khuch i cc ngun chung (SC) S khuch i SC dng MOSFET c knh n t sn cho trn hnh 2.71a. Ti R c mc vo cc mng, cc in tr R1, RG, RS dng xc lp UGSO ch tnh. in tr RS s to nn hi tip m dng mt chiu n nh ch tnh khi thay i nhit v do tnh tn mn ca tham s tranzito. T CS kh hi tip m dng xoay chiu. T Cp1 ghp tng vi ngun tn hiu vo. Nguyn tc chn ch tnh cng ging nh s dng tranzito lng cc (h.2.64). Cng thc (2.119) v (2.120), y c th vit c dng. UDso > Urm + UDS (22

158) IDo > IDm (2159) im lm vic tnh P dch chuyn theo ng ti mt chiu s qua im a v b (h.2.71). i vi im a, ID= 0, UPS = +ED, i vi im b, UDS = 0, ID = ED(RD + RS). ng ti xoay chiu xc nh theo in tr Rt~ = RD//Rt. Trong b khuch i nhiu

tng th ti ca tng trc chnh l mch vo ca tng sau c in tr vo Rv ln. Trong nhng trng hp nh vy th ti xoay chiu ca tng xc nh ch yu bng in tr RD (c chn ti thiu cng nh hn RV mt bc na). Chnh v vy i vi tng tin khuch i th dc ca ng ti xoay chiu (ng c-d) khng khc lm so vi ng ti mt chiu v trong nhiu trng hp ngi ta coi chng l ch tnh c : UDSO = ED IDO(RD + RS) (2-160) trong IDO l dng mng tnh. UDSO l in p cc mng ngun tnh. in p UGSO chnh l tham s ca c tuyn ra tnh (mng) i qua im tnh P (h.2.71). Da vo c tuyn ca FET ta thy ch tnh, in p phn cc c th c cc tnh dng hoc m i vi cc ngun v thm ch c th bng khng. Kho st trng hp UGSO < 0 in tr RS v RG (h.2.71) xc nh in p UGSO < 0 trong ch tnh. Tr s v cc tnh ca in p trn in tr RS l do dng in ISO = IDO chy qua n quyt nh, in tr RS c xc nh bi : RS = UGSO / IDO (2-161) in tr RG dn in p UGSO ly trn RS ln cc ca ca FET. in tr RG phi chn nh hn in tr vo vi bc na. iu ny rt cn thit loi tr nh hng ca tnh khng n nh theo nhit v tnh tn mn ca cc tham s mch vo n in tr vo ca tng. Tr s RS thng chn t 1 5M. Ngoi vic m bo in p yu cu UGSO, in tr RS cn to ra hi tip m dng 1 chiu trong tng, ngn cn s thay i dng IDO do tc dng ca nhit v tnh tn mn ca tham s tranzito v v th n nh ch tnh ca tng. tng tnh n nh th cn tng RS nhng phi m bo gi tr UGSO.Trong trng hp ny phi b in p USO bng cch cung cp cho cc ca in p UGO qua in tr R1. R UGSO = = .R ED .G R US UG ID S +R O O O G (2-162)

1 ED .R G R USO G UGSO in p ngun cung cp R1 = ED = UDSO + USO + IDO.RD (2-163)

(2-164)

Tr s RD c nh hng n c tnh tn s ca tng, n c tnh theo tn s trn ca di tn. Vi quan im m rng di tn th phi gim RD. Sau khi chn in tr trong ca tranzito ri, th ta c th chn RD = (0,05 0,15)ri Vic chn in p USO cng theo nhng iu kin ging nh in p UEO trong tng EC, ngha l tng in p USO s lm tng n nh ca im lm vic tnh do RS

tng, tuy nhin khi cn tng ED. V th USO thng chn khong (0,1 0,3)ED. Cng tng t (2-125) ta c : E = UDO + IDORD D 0.7 0.9 (2-165)

Khi UGSO 0 phi mc in tr RS t yu cu v n nh ch tnh. Lc bt buc phi mc R1. Chn cc phn t da vo cc cng thc (2-162) n (2-165), khi cng thc (2-162), (2-163) cn phi hoc cho UGSO= 0, hoc l thay i du trc in p UGSO. Ch UGSO > 0 l ch in hnh cho MOSFET c knh cm ng loi n. V th nu thc hin vic i du trc UGSO trong cng thc (2-162), (2163) c th dng chng tnh mch thin p ca tng ngun chung. Chn loi FET phi ch n cc tham s tng t nh trong tng EC. Phi tnh n dng mng cc i IDmax, in p cc i UDSmax v Cng sut tiu tn cc i trong tranzito PDmax (h.271), v UDsmax. Ging nh s EC dng tranzito lng cc, tng ngun chung cng lm o pha tn hiu khuch i. V d t vo u vo na chu k in p dng (h. 2.71) s lm tng dng mng v gim in p mng ; u ra s nhn c na chu k in p cc tnh m. Di y ta s phn tch tng khuch i v mt xoay chiu. S thay th tng SC v trn hnh 2.72a c tnh n in dung gia cc in cc ca tranzito. S thay th da trn c s s dng ngun dng mch ra. in tr RD, Rt mc song song mch ra xc nh ti Rt~ = RD // Rt. in tr R1 v RG cng c mc song song. V in tr vo thng ln hn in tr Rn nhiu, nn in p vo ca tng coi nh bng En. T phn ng Cp1, Cp2 v t CS kh ln nn in tr xoay chiu coi nh bng khng. V th trong s thay th khng v nhng t . H s khuch i in p tn s trung bnh Ku U =t = SUv (ri //R t~i ) = t~ (2-166) U UV S(r //R ) hay v l
6

= Sri (2-167) .R t~ u r+ i Rt~ Tch s S.ri gi l h s khuch i tnh ca FET. Thay = Sri vo (2.167) ta c : .R t (2-168) Ku = ~ r+ R i t~ Da vo (2-168) c th v s thay th ca tng SC vi ngun in p Uv (h.2.72b). Trong trng hp nu tng SC l tng tin khuch i trong b khuch i nhiu tng th Rt~ =RD // RV = RD. Nu nh tnh n RD << ri th h s khuch i in p ca tng c tnh gn l:

in tr vo ca tng SC l: 170) RD th // ri R r=cao Khi chuyn sang min tnR s ph iD ch n in dung vo v ra ca tng, ngha l cn ch n in dung gia cc in cc CGS, CGD ca tranzito (h.2.72a), cng nh in dung lp rp mch vo CL (in dung ca linh kin v dy dn mch vo i vi cc m ca ngun cung cp).

Ku = SRD Rv = R1 // RG

(2(2-

a)

b)

Hnh .2.72: S thay th tng SC a) Ngun dng ; b) Ngun p tn s cao nhng in ng k trn s to nn thnh phn khng ca dng in mch vo. ICV = ICGS + ICGD + ICL (2-172) Dng ICGS, ICL xc nh bng in p vo Uv, cn dng ICGD xc nh bng in p cc mng - ca. V in p cc mng ngc pha vi in p vo, nn in p gia cc ca v mng s bng : . . . UV + U = (1 + K u )UV Dng in vo in dung ca tng . . . . . . . . l hay
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Icv =

J w CGS .Uv + J wCGD (1+ K u ).UV + J wC L .Uv . . . IVC Jw Uv [CGS + (1 + KU )CGD + CL ]= JwC v .Uv Cv = CGS + ( 1+ Ku)CGD + CL (2-173)

y Cv l in dung vo ca tng

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in dung ra ca tng ph thuc vo in dung gia cc in cc khong mng- ngun v mng - ca, cng nh in dung lp rp mch ra. Tnh in dung ra cng theo phng php nh tnh i vi in dung vo, c kt qu : 1+ K Cr = CDSU .CGD (2-174) + + C S KU e. Khuch i cc mng chung DC (lp li cc ngun) Hnh 2.73 l s DC dng FET c knh t sn. in tr R1, RG cng vi Rs dng xc nh ch lm vic tnh ca tranzito.

Hnh 273 : S DC dng FET c knh t sn Vic chn v m bo ch tnh c tin hnh tng t nh tng SC. Ti mt chiu ca tng l RS cn ti xoay chiu l Rt~ = RS//Rt i vi tng DC th in p ti trng pha vi in p vo Ut = Uv UGS (2-175) Theo s thay th th Ut li l hm s ca UGS tc dng ln u vo ca tranzito
102

Ut = SUGS (ri//rt~). hay Ut UGS = S(ri t~ //R ) H s khuch i in p ca tng tnh theo (2-176)

103

KU =

= S( i //R t Ut ~) . 1+ S (i t ) ~ Uv //R

(2-177)

U S t (2-178) ~ = 1 + Sht~ H s khuch i Ku ph thuc vo h n S ca tranzito v ti xoay chiu ca tng. H s khuch i s tin ti 1 khi tng S v Rt~. V vy i vi tng DC nn dng tranzito c h dn ln. tm c cc tham s tng ng ca s thay th, bin i cng thc (2-177) sau khi thay vo n S = / ri v khai trin ta c : ri //Rr ~ = riR t~ + i rR t~ = .R t~ ri + (1+ )R t~

v ri >> Rt~ nn

V K u

(2.179)

Chia c t s l mu s v phi ca cng thc (2-179) cho 1+ v thay Ku = Ut/Uv, ta c Rt U (2-180) Ut = v ~ 1+ . ri (1+ )+ R t~ Da vo (2-180) ta v c s thay th ca tng (h.2.73b). mch ra ca s thay th c ngun in p tng ng .U 1+
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V vi in tr tng ng ri/(1 + ). Mch vo ca s thay th (h.2.73b) gm 3 phn t ging nhau nh s thay th SC. Da vo s hnh 2.73b xc nh c in tr ra ca tng DC. 1 1 (2-181) Rr = R s //1+ S in tr ra ca tng DC nh hn tng SC, v vo khong 100 3000. V in p gia cc ca v cc ngun ca tranzito trong s lp li cc ngun bng hiu Uv Ur, nn dng in vo bn thn ca tranzito s nh hn trong s SC, v khng n nh nhit ca in tr khong gia ca v ngun nh. Do cho php ta dng R1, RG ln. V vy tng DC c in tr vo Rv ln (ti vi M) hn tng SC. in dung vo ca tng DC s nh hn ca tng SC.

105

i vi tng lp li cc ngun th cn thit phi tnh n thnh phn dng in dng vo mch ca - mng v ca ngun ca tranzito, cng nh thnh phn dng in dung lp rp mch vo ca tng. V in p cc mng khng i, thnh phn dng in dung CGD v C1 c xc nh bng in p vo Uv. Thnh phn dng in in dung CGS ph thuc vo in p. GS = v Ut =(1 Ku)v Dng vo tng l Icv = jUv[CGD + CGS( 1-Ku) + CL] t Cv = CGD + CGS (1 Ku) + CL (2-182)

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So snh (2-182) vi (2-173) thy in dung vo ca tng DC nh hn trong s SC T (2-182) trong tng DC nu Ku 1 th nh hng ca in dung CGS n in dung vo s gim.

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