Giáo trình linh kiện điện tử

- - - - - -
Gio trnh
Linh Kin in T
Gio trnh Linh Kin in T
Li ni u
*********
Linh kin in t l kin thc bc u v cn bn ca ngnh in t.

Gio trnh c bin son t cc bi ging ca tc gi trong nhiu nm qua ti Khoa
Cng Ngh v Cng Ngh Thng Tin, Trng i hc Cn Th v cc Trung Tm Gio dc
thng xuyn ng bng sng Cu Long sau qu trnh sa cha v cp nht.
Gio trnh ch yu dng cho sinh vin chuyn ngnh in T Vin Thng v T ng
Ha. Cc sinh vin khi K thut v nhng ai ham thch in t cng tm thy y nhiu iu
b ch.
Gio trnh bao gm 9 chng:
T chng 1 n chng 3: Nhc li mt s kin thc cn bn v vt l vi m, cc mc
nng lng v di nng lng trong cu trc ca kim loi v cht bn dn in v dng n nh
cha kha kho st cc linh kin in t.
T chng 4 n chng 8: y l i tng chnh ca gio trnh. Trong cc chng ny,
ta kho st cu to, c ch hot ng v cc c tnh ch yu ca cc linh kin in t thng
dng. Cc linh kin qu c bit v t thng dng c gii thiu ngn gn m khng i vo
phn gii.
Chng 9: Gii thiu s hnh thnh v pht trin ca vi mch.
Ngi vit chn thnh cm n anh Nguyn Trung Lp, Ging vin chnh ca B mn Vin
Thng v T ng Ha, Khoa Cng Ngh Thng Tin, Trng i hc Cn Th c k bn
tho v cho nhiu kin qu bu.
Cn Th, thng 12 nm 2003

Trng Vn Tm
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Bin son: Trng Vn Tm
Mc lc
--------Chng I ..........................................................................................................................................................................................4
MC NNG LNG V DI NNG LNG.........................................................................................................................4
I. KHI NIM V C HC NGUYN LNG: .................................................................................................................4
II. PHN B IN T TRONG NGUYN T THEO NNG LNG: .............................................................................6
III. DI NNG LNG: (ENERGY BANDS) ........................................................................................................................8
Chng II ......................................................................................................................................................................................12
S DN IN TRONG KIM LOI...........................................................................................................................................12
I.
II.
III.
IV.
V.
VI.
LINH NG V DN XUT: ..................................................................................................................................12

PHNG PHP KHO ST CHUYN NG CA HT T BNG NNG LNG:............................................14
TH NNG TRONG KIM LOI: .....................................................................................................................................15
S PHN B CA IN T THEO NNG LNG: ..................................................................................................18
CNG RA (HM CNG): ................................................................................................................................................20
IN TH TIP XC (TIP TH): .................................................................................................................................21
Chng III.....................................................................................................................................................................................22
CHT BN DN IN ...............................................................................................................................................................22
I. CHT BN DN IN THUN HAY NI BM: ........................................................................................................22
II. CHT BN DN NGOI LAI HAY C CHT PHA: ...................................................................................................24
1. Cht bn dn loi N: (N - type semiconductor) ...............................................................................................................24
2. Cht bn dn loi P:.........................................................................................................................................................25
3. Cht bn dn hn hp: .....................................................................................................................................................26
III. DN SUT CA CHT BN DN: ...............................................................................................................................27
IV. C CH DN IN TRONG CHT BN DN: ...........................................................................................................29
V. PHNG TRNH LIN TC: ..........................................................................................................................................30
Chng IV .....................................................................................................................................................................................32
NI P-N V DIODE.....................................................................................................................................................................32
I. CU TO CA NI P-N:.................................................................................................................................................32
II. DNG IN TRONG NI P-N KHI C PHN CC: .............................................................................................34
1. Ni P-N c phn cc thun:.........................................................................................................................................35
2. Ni P-N khi c phn cc nghch: ................................................................................................................................38
III. NH HNG CA NHIT LN NI P-N:..............................................................................................................40
IV. NI TR CA NI P-N. ..................................................................................................................................................41
1. Ni tr tnh: (Static resistance). .......................................................................................................................................41
2. Ni tr ng ca ni P-N: (Dynamic Resistance)............................................................................................................42
V. IN DUNG CA NI P-N. ............................................................................................................................................44
1. in dung chuyn tip (in dung ni)...........................................................................................................................44
2. in dung khuch tn. (Difusion capacitance) ................................................................................................................45
VI. CC LOI DIODE THNG DNG.................................................................................................................................45
1. Diode chnh lu: ..............................................................................................................................................................45
2. Diode tch sng. ..............................................................................................................................................................53
3. Diode schottky:................................................................................................................................................................53
4. Diode n p (diode Zenner):............................................................................................................................................54
5. Diode bin dung: (Varicap Varactor diode)..................................................................................................................57
6. Diode hm (Tunnel diode)...............................................................................................................................................58
Bi tp cui chng ......................................................................................................................................................................59
Chng V.......................................................................................................................................................................................61
TRANSISTOR LNG CC .....................................................................................................................................................61
I.
II.
III.
IV.
V.
VI.
CU TO C BN CA BJT..........................................................................................................................................61
TRANSISTOR TRNG THI CHA PHN CC. ....................................................................................................61
C CH HOT NG CA TRANSISTOR LNG CC. .........................................................................................63
CC CCH RP TRANSISTOR V LI DNG IN. .........................................................................................64
DNG IN R TRONG TRANSISTOR. ........................................................................................................................66
C TUYN V-I CA TRANSISTOR. ...........................................................................................................................67
1. Mc theo kiu cc nn chung: .........................................................................................................................................68
2. Mc theo kiu cc pht chung. ........................................................................................................................................69
3. nh hng ca nhit ln cc c tuyn ca BJT. .......................................................................................................72
VII. IM IU HNH NG THNG LY IN MT CHIU...............................................................................73
VIII. KIU MU MT CHIU CA BJT. .............................................................................................................................78
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Bin son: Trng Vn Tm

IX. BJT VI TN HIU XOAY CHIU..................................................................................................................................80
1. M hnh ca BJT: ............................................................................................................................................................80
2. in dn truyn (transconductance) ................................................................................................................................82
3. Tng tr vo ca transistor: .............................................................................................................................................83
4. Hiu ng Early (Early effect) ..........................................................................................................................................85
5. Mch tng ng xoay chiu ca BJT: .........................................................................................................................86
Bi tp cui chng ......................................................................................................................................................................90
CHNG 6 ...................................................................................................................................................................................91
TRANSISTOR TRNG NG..................................................................................................................................................91
I. CU TO CN BN CA JFET:....................................................................................................................................91
II. C CH HOT NG CA JFET: .................................................................................................................................93
III. C TUYN TRUYN CA JFET. ................................................................................................................................99
IV. NH HNG CA NHIT TRN JFET. ...............................................................................................................100
V. MOSFET LOI HIM (DEPLETION MOSFET: DE MOSFET)...................................................................................102
VI. MOSFET LOI TNG (ENHANCEMENT MOSFET: E-MOSFET) ............................................................................107
VII. XC NH IM IU HNH: ...................................................................................................................................111
VIII. FET VI TN HIU XOAY CHIU V MCH TNG NG VI TN HIU NH........................................113
IX. IN DN TRUYN (TRANSCONDUCTANCE) CA JFET V DEMOSFET. .......................................................117
X. IN DN TRUYN CA E-MOSFET. .......................................................................................................................118
XI. TNG TR VO V TNG TR RA CA FET. ........................................................................................................119
XII. CMOS TUYN TNH (LINEAR CMOS).......................................................................................................................120
XIII. MOSFET CNG SUT: V-MOS V D-MOS..............................................................................................................122
1. V-MOS: .........................................................................................................................................................................122
2. D-MOS: .........................................................................................................................................................................123
Bi tp cui chng ....................................................................................................................................................................125
CHNG VII .............................................................................................................................................................................126
LINH KIN C BN LP BN DN PNPN V NHNG LINH KIN KHC ...............................................................126
I.
SCR (THYRISTOR SILICON CONTROLLED RECTIFIER).....................................................................................126

1. Cu to v c tnh: .......................................................................................................................................................126
2. c tuyn Volt-Ampere ca SCR:.................................................................................................................................128
3. Cc thng s ca SCR: ..................................................................................................................................................129
4. SCR hot ng in th xoay chiu............................................................................................................................130
5. Vi ng dng n gin: .................................................................................................................................................131
II. TRIAC (TRIOD AC SEMICONDUCTOR SWITCH).....................................................................................................133
III. SCS (SILICON CONTROLLED SWITCH). ................................................................................................................135
IV. DIAC ................................................................................................................................................................................136
V. DIOD SHOCKLEY..........................................................................................................................................................137
VI. GTO (GATE TURN OFF SWITCH). ...........................................................................................................................138
VII. UJT (UNIJUNCTION TRANSISTOR TRANSISTOR C NI). ............................................................................140
1. Cu to v c tnh ca UJT: .........................................................................................................................................140
2. Cc thng s k thut ca UJT v vn n nh nhit cho nh: ................................................................................143
3. ng dng n gin ca UJT:.........................................................................................................................................144
VIII. PUT (Programmable Unijunction Transistor).................................................................................................................145
CHNG VIII............................................................................................................................................................................148
LINH KIN QUANG IN T................................................................................................................................................148
I. NH SNG. ....................................................................................................................................................................148
II. QUANG IN TR (PHOTORESISTANCE)................................................................................................................149
III. QUANG DIOD (PHOTODIODE)....................................................................................................................................151
IV. QUANG TRANSISTOR (PHOTO TRANSISTOR). .......................................................................................................152
V. DIOD PHT QUANG (LED-LIGHT EMITTING DIODE)............................................................................................154
VI. NI QUANG....................................................................................................................................................................155
CHNG IX...............................................................................................................................................................................157
S LC V IC ........................................................................................................................................................................157
I. KHI NIM V IC - S KT T TRONG H THNG IN T..............................................................................157
II. CC LOI IC. .................................................................................................................................................................159
1. IC mng (film IC):.........................................................................................................................................................159
2. IC n tnh th (Monolithic IC):....................................................................................................................................159
3. IC lai (hibrid IC). ...........................................................................................................................................................160
III. S LC V QUI TRNH CH TO MT IC N TINH TH. ...............................................................................160
IV. IC S (IC DIGITAL) V IC TNG T (IC ANALOG). ............................................................................................162
1. IC Digital:......................................................................................................................................................................162
2. IC analog: ......................................................................................................................................................................163
Ti liu tham kho ......................................................................................................................................................................163
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Chng I
MC NNG LNG V DI NNG LNG
Trong chng ny ch yu nhc li cc kin thc c bn v c hc nguyn lng,
s phn b in t trong nguyn t theo nng lng, t hnh thnh di nng lng
trong tinh th cht bn dn. hc chng ny, sinh vin ch cn c kin thc tng i
v vt l v ha hc i cng. Mc tiu cn t c l hiu c ngha ca di dn
in, di ha tr v di cm, t phn bit c cc cht dn in, bn dn in v cch
in.
I. KHI NIM V C HC NGUYN LNG:

Ta bit rng vt cht c cu to t nhng nguyn t ( l thnh phn nh nht
ca nguyn t m cn gi nguyn tnh cht ca nguyn t ). Theo m hnh ca nh vt
l Anh Rutherford (1871-1937), nguyn t gm c mt nhn mang in tch dng
(Proton mang in tch dng v Neutron trung ho v in) v mt s in t (electron)
mang in tch m chuyn ng chung quanh nhn v chu tc ng bi lc ht ca nhn.
Nguyn t lun lun trung ha in tch, s electron quay chung quanh nhn bng s
proton cha trong nhn - in tch ca mt proton bng in tch mt electron nhng tri
du). in tch ca mt electron l -1,602.10-19Coulomb, iu ny c ngha l c c
1 Coulomb in tch phi c 6,242.1018 electron. in tch ca in t c th o c trc
tip nhng khi lng ca in t khng th o trc tip c. Tuy nhin, ngi ta c
th o c t s gia in tch v khi lng (e/m), t suy ra c khi lng ca
in t l:
mo=9,1.10-31Kg
l khi lng ca in t khi n chuyn ng vi vn tc rt nh so vi vn tc
nh sng (c=3.108m/s). Khi vn tc in t tng ln, khi lng ca in t c tnh
theo cng thc Lorentz-Einstein:
me =
mo
v2
1 2
c
Mi in t chuyn ng trn mt ng trn v chu mt gia tc xuyn tm. Theo

thuyt in t th khi chuyn ng c gia tc, in t phi pht ra nng lng. S mt
nng lng ny lm cho qu o ca in t nh dn v sau mt thi gian ngn, in t
s ri vo nhn. Nhng trong thc t, cc h thng ny l mt h thng bn theo thi
gian. Do , gi thuyt ca Rutherford khng ng vng.
Nh vt l hc an Mch Niels Bohr (1885- 1962) b tc bng cc gi thuyt
sau:
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Bin son: Trng Vn Tm
C nhng qu o t bit, trn in t c th di chuyn m khng pht ra nng

lng. Tng ng vi mi qu o c mt mc nng lng nht nh. Ta c mt qu o
dng.
Khi in t di chuyn t mt qu o tng ng vi mc nng lng w1 sang qu

o khc tng ng vi mc nng lng w2 th s c hin tng bc x hay hp thu nng
lng. Tn s ca bc x (hay hp thu) ny l:
w 2 w1
h
Trong , h=6,62.10-34 J.s (hng s Planck).
f=
Trong mi qu o dng, moment ng lng ca in t bng bi s ca

Moment ng lng: m.v.r = n.
h
= nh
2
h
=h
2
v
r
-e
+e
Hnh 1
Vi gi thuyt trn, ngi ta d on c cc mc nng lng ca nguyn t

hydro v gii thch c quang ph vch ca Hydro, nhng khng gii thch c i vi
nhng nguyn t c nhiu in t. Nhn thy s i tnh gia sng v ht, Louis de
Broglie (Nh vt l hc Php) cho rng c th lin kt mi ht in khi lng m, chuyn
ng vi vn tc v mt bc sng =
h
.
mv
Tng hp tt c gi thuyt trn l mn c hc nguyn lng, kh d c th gii thch

c cc hin tng quan st c cp nguyn t.
Phng trnh cn bn ca mn c hc nguyn lng l phng trnh Schrodinger
c vit nh sau:
h2
+ ( E U ) = 0
2.m
l ton t Laplacien
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Bin son: Trng Vn Tm
2 2 2
+
+
x 2 y 2 z 2
E: nng lng ton phn

U: th nng
(E-U): ng nng
l mt hm s gi l hm s sng. Hm s ny xc nh xc sut tm thy ht in

trong min khng gian ang kho st.
Trong khi gii phng trnh Schrodinger tm nng lng ca nhng in t trong
mt nguyn t duy nht, ngi ta thy rng mi trng thi nng lng ca electron ph
thuc vo 4 s nguyn gi l 4 s nguyn lng:
S nguyn lng xuyn tm: (S nguyn lng chnh)
Xc nh kch thc ca qu o n=1,2,3,7
S nguyn lng phng v: (S nguyn lng ph)
Xc nh hnh th qu o l=1,2,3,,n-1
S nguyn lng t:
Xc nh phng hng ca qu o ml=0,1, , m l
S nguyn lng Spin:
1
1
Xc nh chiu quay ca electron m s = + v 2
2
Trong mt h thng gm nhiu nguyn t, cc s nguyn lng tun theo nguyn l

ngoi tr Pauli. Nguyn l ny cho rng: trong mt h thng khng th c 2 trng thi
nguyn lng ging nhau, ngha l khng th c hai in t c 4 s nguyn lng hon
ton ging nhau.
II. PHN B IN T TRONG NGUYN T THEO

NNG LNG:
Tt c cc nguyn t c cng s ngun lng chnh hp thnh mt tng c tn l
K,L,M,N,O,P,Q ng vi n=1,2,3,4,5,6,7.
mi tng, cc in t c cng s l to thnh cc ph tng c tn s,p,d,f tng ng
vi l=0,1,2,3
Tng K (n=1) c mt ph tng s c ti a 2 in t.
Tng L (n=2) c mt ph tng s c ti a 2 in t v mt ph tng p c ti a 6 in t.
Tng M (n=3) c mt ph tng s (ti a 2 in t), mt ph tng p (ti a 6 in t) v mt
ph tng d (ti a 10 in t).
Tng N (n=4) c mt ph tng s (ti a 2 in t), mt ph tng p (ti a 6 in t), mt
ph tng d (ti a 10 in t) v mt ph tng f (ti a 14 in t).
Nh vy: Tng K c ti a 2 in t.
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Bin son: Trng Vn Tm
Tng L c ti a 8 in t.
Tng M c ti a 18 in t.
Tng N c ti a 32 in t.
Cc tng O,P,Q cng c 4 ph tng v cng c ti a 32 in t.
ng vi mi ph tng c mt mc nng lng v cc mc nng lng c xp
theo th t nh sau:
1s
2s
3s
4s
5s
6s
7s
2p
3p
4p
5p
6p
7p
3d
4d
5d
6d
7d
4f
5f
6f
7f
Hnh 2
Khi khng b kch thch, cc trng thi nng lng nh b in t chim trc (gn
nhn hn) khi ht ch mi sang mc cao hn (xa nhn hn). Th d: nguyn t Na c s
in t z=11, c cc ph tng 1s,2s,2p b cc in t chim hon ton nhng ch c 1
in t chim ph tng 3s.
Cch biu din:
Theo mu ca Bohr
Theo mc nng lng

Na11
NATRI
1s2 2s2 2p6 3s1
Na
+11
Na 2-8-1
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Bin son: Trng Vn Tm
Si14
SILICIUM
1s2 2s2 2p6 3s2 3p2
Si
+14
Si 2-8-4
Ge32
GERMANIUM
1s2 2s2 2p6 3s2 3p6 4s2 3d10 4p2
Ge
+32
Ge 2-8-18-4
Hnh 3
Lp bo ha: Mt ph tng bo ha khi c s in t ti a.

Mt tng bo ha khi mi ph tng bo ha. Mt tng bo ha rt bn, khng
nhn thm v cng kh mt in t.
Tng ngoi cng: Trong mt nguyn t, tng ngoi cng khng bao gi cha qu 8
in t. Nguyn t c 8 in t tng ngoi cng u bn vng (trng hp cc kh tr).
Cc in t tng ngoi cng quyt nh hu ht tnh cht ha hc ca mt nguyn
t.
III. DI NNG LNG: (ENERGY BANDS)

Nhng cng trnh kho cu tia X chng t rng hu ht cc cht bn dn u
dng kt tinh.
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Bin son: Trng Vn Tm
Ta xt mt mng tinh th gm N nguyn t thuc nhm 4A, th d C6. Ta tng

tng rng c th thay i c khong cch gia cc nguyn t m khng thay i cu
to cn bn ca tinh th. Nu cc nguyn t cch nhau mt khong d1 sao cho tc ng
ln nhau khng ng k th cc mc nng lng ca chng trng vi cc mc nng lng
ca mt nguyn t c nht. Hai ph tng ngoi cng c 2 in t s v 2 in t p
(C6=1s22s22p2). Do , nu ta khng n cc tng trong, ta c 2N in t chim tt
c 2N trng thi s v c cng mc nng lng; Ta cng c 2N in t p chim 2N trng
thi p. Vy c 4N trng thi p cha b chim. Gi s khong cch gia cc nguyn t
c thu nh hn thnh d2, tc dng ca mt nguyn t bt k ln cc nguyn t ln cn
tr thnh quan trng.
Nng lng E
4N trng thi
cha b chim
6N trng thi p
(2N trng thi b chim)
Di dn in
2p
Di cm EG
Di cm
4N trng thi b chim
2s
2N trng thi s
b chim
Di ha tr
d0
d4
d3
d2
d1
Hnh 4
Ta c mt h thng gm N nguyn t, do cc nguyn t phi tun theo nguyn l

Pauli. 2N in t s khng th c cng mc nng lng m phi c 2N mc nng lng
khc nhau; khong cch gia hai mc nng kng rt nh nhng v N rt ln nn khong
cch gia mc nng lng cao nht v thp nht kh ln, ta c mt di nng lng. 2N
trng thi ca di nng lng ny u b 2N in t chim. Tng t, bn trn di nng
lng ny ta c mt di gm 6N trng thi p nhng ch c 2N trng thi p b chim ch.
Ta rng, gia hai di nng lng m in t chim-c c mt di cm. in
t khng th c nng lng nm trong di cm, khong cch (di cm) cng thu hp khi
khong cch d cng nh (xem hnh). Khi khong cch d=d3, cc di nng lng chng
ln nhau, 6N trng thi ca di trn ho vi 2N trng thi ca di di cho ta 8N trng
thi, nhng ch c 4N trng thi b chim. khong cch ny, mi nguyn t c 4 in t
tng ngoi nhng ta khng th phn bit c in t no l in t s v in t no l
in t p, khong cch t , tc dng ca cc nguyn t ln nhau rt mnh. S phn
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Bin son: Trng Vn Tm
b cc di nng lng tu thuc vo dng tinh th v nguyn t s. Ngi ta xc nh s

phn b ny bng cch gii phng trnh Schrodinger v c kt qu nh hnh v. Ta c
mt di ho tr (valence band) gm 4N trng thi hon ton b chim v mt di dn in
(conduction band) gm 4N trng thi cha b chim. Gia hai di nng lng ny, c mt
di nng lng cm c nng lng khong 6eV. (eV: ElectronVolt)
1 volt l hiu in th gia hai im ca mt mch in khi nng lng cung cp l
1 Joule chuyn mt in tch 1 Coloumb t im ny n im kia.
Joule
Vy, volt V =
W
Q Coloumb
Vy nng lng m mt in t tip nhn khi vt mt hiu in th 1 volt l:

V=
W
Q
W
1,602 .10 -19
W = 1,602.10 19 Joule
1V =
Nng lng ny c gi l 1eV (1eV=1,602.10-19J)

Ta kho st trng hp c bit ca tinh th Cacbon. Nu ta kho st mt tinh th
bt k, nng lng ca in t cng c chia thnh tng di. Di nng lng cao nht b
chim gi l di ha tr, di nng lng thp nht cha b chim gi l di dn in. Ta
c bit ch n hai di nng lng ny.
E Nng lng
Di dn in (Di nng lng

thp nht cha b chim)
EG
Di cm
Di ho tr (Di nng lng
cao nht b chim)
Hnh 5
* Ta c 3 trng hp:
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Di cm c cao kh ln (EG>5eV). y l trng hp ca cc cht cch in. Th

d nh kim cng c EG=7eV, SiO2 EG=9eV.
Di cm c cao nh (EG<5eV). y l trng hp cht bn dn in.
Th d: Germanium c EG=0,75eV
Silicium c EG=1,12eV
Galium Arsenic c EG=1,4eV
Di ha tr v di dn in chng ln nhau, y l trng hp ca cht dn in. Th
d nh ng, nhm
E (Nng lng)
Di dn in
EG>5eV Di cm
Di dn in
EG<5eV
Di ho tr
Di ho tr
(a)
(b)
(c)
Cht cch in
Cht bn dn
Cht dn in
Hnh 6
Gi s ta tng nhit ca tinh th, nh s cung cp nhit nng, in t trong di

ha tr tng nng lng. Trong trng hp (a), v EG ln, in t khng nng lng
vt di cm vo di dn in. Nu ta cho tc dng mt in trng vo tinh th, v tt
c cc trng thi trong di ha tr iu b chim nn in t ch c th di chuyn bng
cch i ch cho nhau. Do , s in t i, v mt chiu bng vi s in t i, v theo
chiu ngc li, dng in trung bnh trit tiu. Ta c cht cch in.
Trong trng hp (b), mt s in t c nng lng s vt di cm vo di dn
in. Di tc dng ca in trng, cc in t ny c th thay i nng lng d dng
v trong di dn in c nhiu mc nng lng trng tip nhn chng. Vy in t c
nng lng trong di dn in c th di chuyn theo mt chiu duy nht di tc dng
ca in trng, ta c cht bn dn in.
Trong trng hp (c) cng ging nh trng hp (b) nhng s in t trong di dn
in nhiu hn lm cho s di chuyn mnh hn, ta c kim loi hay cht dn in.
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Bin son: Trng Vn Tm
Chng II
S DN IN TRONG KIM LOI
Ni dung chnh ca chng ny l n li khi nim v linh ng ca in t, dn
sut ca kim loi, t a ra phng php kho st chuyn ng ca ht t bng nng
lng. Mc tiu cn t c l hiu r th nng ca in t trong kim loi, s phn b
in t theo nng lng, cng ra ca kim loi v tip th.
I. LINH NG V DN XUT:
Trong chng I, hnh nh ca di nng lng trong kim loi c trnh by.
Theo s kho st trn, di nng lng do in t chim c th cha y v khng c di
cm cho nhng nng lng cao. Ngha l in t c th di chuyn t do trong kim loi
di tc dng ca in trng.
E
Na
Hnh 1
Hnh trn v phn b in tch trong tinh th Na. Nhng ch gch cho tiu biu cho
nhng in t di ha tr c nng lng thp nht, nhng ch trng cha nhng in t
c nng lng cao nm trong di dn in. Chnh nhng in t ny l nhng in t
khng th ni thuc hn vo mt nguyn t nht nh no v c th di chuyn t do t
nguyn t ny sang nguyn t khc. Vy kim loi c coi l ni cc ion kt hp cht
ch vi nhau v xp u n trong 3 chiu trong mt m my in t m trong in
t c th di chuyn t do.
Hnh nh ny l s m t kim loi trong cht kh in t. Theo thuyt cht kh in
t kim loi, in t chuyn ng lin tc vi chiu chuyn ng bin i mi ln va
chm vi ion dng nng, c xem nh ng yn. Khong cch trung bnh gia hai ln
va chm c gi l on ng t do trung bnh. V y l chuyn ng tn lon, nn
mt thi im no , s in t trung bnh qua mt n v din tch theo bt c chiu
no s bng s in t qua n v din tch y theo chiu ngc li. Nh vy , dng in
trung bnh trit tiu.
Trang 12
Bin son: Trng Vn Tm
Gi s, mt in trng E c thit lp trong mng tinh th kim loi, ta th kho

st chuyn ng ca mt in t trong t trng ny.
en
x
e1
e2
Hnh 2
Hnh trn m t chuyn ng ca in t di tcdng ca in trng E . Qu o

ca in t l mt ng gp khc v in t chm vo cc ion dng v i hng
chuyn ng. Trong thi gian t=n ln thi gian t do trung bnh, in t di chuyn c
mt on ng l x. Vn tc v =
x
gi l vn tc trung bnh. Vn tc ny t l vi in
t
trng E . v = E
Hng s t l gi l linh ng ca in t, tnh bng m2/Vsec.
in tch i qua mi n v din tch trong mt n v thi gian c gi l mt dng
in J.
Ta c: J = n.e.v
Trong , n: mt in t, e: in tch ca mt electron
By gi, ta xt mt in tch vi cp S t thng gc vi chiu di chuyn ca in t.

Nhng in t ti mt S thi im t=0 (t=0 c chn lm thi im gc) l nhng
in t trn mt S cch S mt khong v (vn tc trung bnh ca in t) thi im
t=-1. thi im t=+1, nhng in t i qua mt S chnh l nhng in t cha trong
hnh tr gii hn bi mt S v S. in tch ca s in t ny l q=n.e.v.s, vi n l mt
in t di chuyn. Vy in tch i ngang qua mt n v din tch trong mt n v
t = -1
t=0
thi gian l: J=n.e.v
S
Nhng v = E nn J = n.e..E
Ngi ta t = n.e. (c l Sigma)
Nn J = E gi l dn xut ca kim loi
V =
S
v
Hnh 3
1
gi l in tr sut ca kim loi
in tr sut tnh bng m v dn sut tnh bng mho/m
Trang 13
Bin son: Trng Vn Tm
II. PHNG PHP KHO ST CHUYN NG CA

HT T BNG NNG LNG:
K
A
5cm
v0
M(x)
EC = 2eV
10V
+
Hnh 4
Phng php kho st ny cn c trn nh lut bo ton lng. d hiu, ta xt

th d sau y:
Mt diode l tng gm hai mt phng song song bng kim loi cch nhau 5 Cm.
Anod A c hiu in th l 10V so vi Catod K. Mt in t ri Catod K vi nng
lng ban u Ec=2eV. Tnh khong cch ti a m in t c th ri Catod.
Gi s, in t di chuyn ti im M c honh l x. in th ti im M s t l
vi honh x v in trng gia Anod v Catod u.
in th ti mt im c honh x l:
V = x +
Khi x=0, (ti Catod) V = 0 = 0

Nn V = x
Ti x=5 Cm (ti Anod A) th V=-10volt = 2
Vy V=-2x (volt) vi x tnh bng Cm
Suy ra th nng ti im M l:
U = QV = +2.e.x (Joule) vi e l in tch ca in t.
Ta c th vit U = 2.x (eV)

Nng lng ton phn ti im M l:
T=
1
mv 2 + U
2
Trang 14
Bin son: Trng Vn Tm
Nng lng ny khng thay i. Trn th, T c biu din bng ng thng
song song vi trc x.
1
2
Hiu T U = mv 2 l ng nng ca in t. ng nng ny ti a ti im O

(Catod) ri gim dn v trit tiu ti im P c honh x0. Ngha l ti im x0, in t
dng li v di chuyn tr v catod K. Vy x0 l khong cch ti a m in t c th ri
xa Catod.
eV (Nng lng)
P
T
1
m.v 02
2
0
x0 = 1cm
5 cm
x (cm)
Hnh 5
Ti im M (x=x0) ta c:
T-U=0
M T=+Ec (nng lng ban u)
T=2.e.V
Vy, U=2.x0 (eV)
=> 2-2.x0=0
=> x0=1Cm
V phng din nng lng, ta c th ni rng vi nng lng ton phn c sn T,

in t khng th vt qua ro th nng U vo phn c gch cho.
Ta thy rng nu bit nng lng ton phn ca ht in v s phn b th nng
trong mi trng ht in, ta c th xc nh c ng di chuyn ca ht in.
Phn sau y, ta p dng phng php trn kho st s chuyn ng ca in t
trong kim loi.
III. TH NNG TRONG KIM LOI:

Nu ta c mt nguyn t duy nht th in th ti mt im cch mt khong r
l:
Trang 15
Bin son: Trng Vn Tm
V=
k
+C
r
Nu chn in th ti mt im rt xa lm in th Zero th C=0. Vy mt in t

c in tch e cch nhn mt on r s c th nng l:
U = eV =
ke
r
-e
-e
r
Hnh 6
Hnh trn l th ca th nng U theo khong cch r. Phn th khng lin tc

ng vi mt in t bn tri nhn . Nu ta c hai nhn v th trong vng gia hai
nhn ny th nng ca in t l tng cc th nng do v to ra. Trong kim loi, cc
nhn c sp xp u n theo 3 chiu. Vy, ta c th kho st s phn b ca th nng
bng cch xt s phn b dc theo di , v ...
Trang 16
Bin son: Trng Vn Tm
in t t do
0
EB
U0
in t buc
V0 = 0
EB
Hnh 7
Hnh trn biu din s phn b .

Ta thy rng c nhng vng ng th rng nm xen k vi nhng vng in th
thay i rt nhanh. Mt ngoi ca mi kim loi khng c xc nh hon ton v cch
nhn cui cng mt khong cch nh. V bn phi ca nhn khng cn nhn nn th
nng tin ti Zero ch khng gi tnh tun hon nh bn trong kim loi. Do , ta c mt
ro th nng ti mt ngoi ca kim loi.
Ta xt mt in t ca nhn v c nng lng nh hn U0, in t ny ch c th
di chuyn trong mt vng nh cnh nhn gia hai ro th nng tng ng. l in t
buc v khng tham gia vo s dn in ca kim loi. Tri li, mt in t c nng lng
ln hn U0 c th di chuyn t nguyn t ny qua nguyn t khc trong khi kim loi
nhng khng th vt ra ngoi khi kim loi c v khi n mt phn cch, in t
ng vo ro th nng. Cc in t c nng lng ln hn U0 c gi l cc in t t
do. Trong cc chng sau, ta t bit ch n cc in t ny.
V hu ht khi kim loi u c cng in th V0 tng ng vi th nng U0=-eV0
nn ta c th gi s khi kim loi l mt khi ng th V0. Nhng in th ty thuc vo
mt hng s cng nn ta c th chn V0 lm in th gc (V0=0V). Gi EB l chiu cao
ca ro th nng gia bn trong v bn ngoi kim loi. Mt in t bn trong khi kim
loi mun vt ra ngoi phi c t nht mt nng lng U=EB, v vy ta cn phi bit s
phn b ca in t theo nng lng.
Trang 17
Bin son: Trng Vn Tm
III. S PHN B CA IN T THEO NNG LNG:

Gi nE= l s in t trong mt n v th tch c nng lng t E n E+E.
Theo nh ngha, mt in t trung bnh c nng lng t E n E+E l t s
Gii hn ca t s ny khi E 0 gi l mt in t c nng lng E.
Ta c: (E) = lim
E 0
n E dn E
=
E
dE
dn E = (E).dE
Vy,
n E
.
E
(1)
(2)
Do , nu ta bit c hm s ( E ) ta c th suy ra c s in t c nng lng

trong khong t E n E+dE bng biu thc (2). Ta thy rng (E) chnh l s trng thi
nng lng E b in t chim. Nu gi n(E) l s trng thi nng lng c nng
lng E m in t c th chim c. Ngi ta chng minh c rng: t s
(E)
bng
n (E)
mt hm s f(E), c dng:
f (E) =
( E )
=
n (E)
1
1+ e
E E F
KT
Trong , K=1,381.10-23 J/0K (hng s Boltzman)

K=
1,381.10 23
= 8,62.10 5 (V/ 0 K)
e
EF nng lng Fermi, ty thuc vo bn cht kim loi.

Mc nng lng ny nm trong di cm.
nhit rt thp (T00K)
Nu E<EF, ta c f(E)=1
Nu E>EF, ta c f(E)=0
Vy f(E) chnh l xc sut tm thy in t c nng lng E nhit T.
Hnh sau y l th ca f(E) theo E khi T00K v khi T=2.5000K.
f(E) 1
T=00K
(E)
T=00K
T=25000K
T=25000K
EF
E
Trang 18
Hnh 8
EF
Bin son: Trng Vn Tm
Ta chp nhn rng:

1
N(E) = .E 2 l hng s t l.
Lc , mt in t c nng lng E l:
1
(E ) = f (E ).N (E ) = .E .f (E )
2
Hnh trn l th ca (E) theo E tng ng vi nhit T=00K v T=2.5000K.

Ta thy rng hm (E) bin i rt t theo nhit v ch bin i trong vng cn
ca nng lng EF. Do , nhit cao (T=2.5000K) c mt s rt t in t c nng
lng ln hn EF, hu ht cc in t u c nng lng nh hn EF. Din tch gii hn
bi ng biu din ca (E) v trc E cho ta s in t t do n cha trong mt n v
th tch.
EF
EF
1
2
2
n = (E).dE = .E .dE = .E F2
3
0
0
( l f(E)=1 v T=00K)
T y ta suy ra nng lng Fermi EF
2
3 n 3
E F = .
2
Nu ta dng n v th tch l m3 v n v nng lng l eV th c tr s l:

= 6,8.1027
2
Do , E F = 3,64.10 19.n 3
Nu bit c khi lng ring ca kim loi v s in t t do m mi nguyn t
c th nh ra, ta tnh c n v t suy ra EF. Thng thng EF < 10eV.
Th d, khi lng ring ca Tungsten l d = 18,8g/cm3, nguyn t khi l A = 184,
bit rng mi nguyn t cho v = 2 in t t do. Tnh nng lng Fermi.
Gii: Khi lng mi cm3 l d, vy trong mt cm3 ta c mt s nguyn t khi l
d/A. Vy trong mi cm3, ta c s nguyn t thc l:
Trang 19
Bin son: Trng Vn Tm
d
23
.A 0 vi A0 l s Avogadro (A0 = 6,023.10 )
A
Mi nguyn t cho v = 2 in t t do, do s in t t do trong mi m3 l:

n=
d
.A 0 .v.10 6
A
Vi Tungsten, ta c:
n=
18,8
3
.6,203.10 23.2.10 6 1,23.10 29 in t/m
184
E F = 3,64.10 19. 1,23.10 29
2
3
E F 8,95eV
IV. CNG RA (HM CNG):

Ta thy rng nhit thp (T #00K), nng lng ti a ca in t l EF
(E<EF<EB), do , khng c in t no c nng lng ln hn ro th nng EB, ngha l
khng c in t no c th vt ra ngoi khi kim loi. Mun cho in t c th vt ra
ngoi, ta phi cung cp cho in t nhanh nht mt nng lng l:
EW = EB-EF
EW c gi l cng ra ca kim loi.
25000K
U
EB EW
EF
EF
EB
00K
0
(E)
0
Hnh 9
Nu ta nung nng khi kim loi ti nhit T=2.5000K, s c mt s in t c

nng lng ln hn EB, cc in t ny c th vt c ra ngoi kim loi. Ngi ta
chng minh c rng, s in t vt qua mi n v din tch trong mt n v thi
gian l:
Trang 20
Bin son: Trng Vn Tm
J th = A 0 T 2 e
Ew
KT
Trong , A0 = 6,023.1023 v K = 1,38.10-23 J/0K
y l phng trnh Dushman-Richardson.

Ngi ta dng phng trnh ny o EW v ta c th o c dng in Jth; dng
in ny chnh l dng in bo ha trong mt n hai cc chn khng c tim lm bng
kim loi mun kho st.
V. IN TH TIP XC (TIP TH):

Xt mt ni C gia hai kim loi I v II. Nu ta dng mt Volt k nhy o hiu
in th gia hai u ca ni (A v B), ta thy hiu s in th ny khng trit tiu, theo
nh ngha, hiu in th ny gi l tip th. Ta gii thch tip th nh sau:
A
II
EW2
EW1
+-
Ei
II
Ew1 < Ew2
VA > VB
Hnh 10
Gi s kim loi I c cng ra EW1 nh hn cng ra EW2 ca kim loi II. Khi ta ni hai
kim loi vi nhau, in t s di chuyn t (I) sang (II) lm cho c s t tp in t bn
(II) v c s xut hin cc Ion dng bn (I). Cch phn b in tch nh trn to ra mt
in trng Ei hng t (I) sang (II) lm ngn tr s di chuyn ca in t. Khi Ei
mnh, cc in t khng di chuyn na, ta c s cn bng nhit ng hc ca h thng
hai kim loi ni vi nhau. S hin hu ca in trng Ei chng t c mt hiu in th
gia hai kim loi.
Trang 21
Bin son: Trng Vn Tm
Chng III
CHT BN DN IN
(SEMICONDUCTOR)
Trong chng ny ni dung chnh l tm hiu k cu trc v c im ca cht bn
dn in, cht bn dn loi N, cht bn dn loi P v cht bn dn tng hp. Kho st nh
hng ca nhit ln cht bn dn, t hiu c c ch dn in trong cht bn dn.
y l vt liu c bn dng trong cng ngh ch to linh kin in t, sinh vin cn nm
vng c th hc tt cc chng sau.
I. CHT BN DN IN THUN HAY NI BM:

(Pure semiconductor or intrinsic semiconductor)
Hu ht cc cht bn dn u c cc nguyn t sp xp theo cu to tinh th. Hai

cht bn dn c dng nhiu nht trong k thut ch to linh kin in t l Silicium v
Germanium. Mi nguyn t ca hai cht ny u c 4 in t ngoi cng kt hp vi 4
in t ca 4 nguyn t k cn to thnh 4 lin kt ha tr. V vy tinh th Ge v Si
nhit thp l cc cht cch in.
in t trong
di ha tr
Ni ha tr
Hnh 1: Tinh th cht bn dn nhit thp (T = 00K)
Nu ta tng nhit tinh th, nhit nng s lm tng nng lng mt s in t v

lm gy mt s ni ha tr. Cc in t cc ni b gy ri xa nhau v c th di chuyn
d dng trong mng tinh th di tc dng ca in trng. Ti cc ni ha tr b gy ta
c cc l trng (hole). V phng din nng lng, ta c th ni rng nhit nng lm tng
nng lng cc in t trong di ha tr.
Trang 22
Bin son: Trng Vn Tm
in t t do trong
di dn in
Ni ha tr
b gy.
L trng trong
di ha tr
Hnh 2: Tinh th cht bn dn nhit cao (T = 3000K)
Khi nng lng ny ln hn nng lng ca di cm (0,7eV i vi Ge v 1,12eV

i vi Si), in t c th vt di cm vo di dn in v cha li nhng l trng (trng
thi nng lng trng) trong di ha tr). Ta nhn thy s in t trong di dn in bng
s l trng trong di ha tr.
Nu ta gi n l mt in t c nng lng trong di dn in v p l mt l
trng c nng lng trong di ha tr. Ta c:n=p=ni
Ngi ta chng minh c rng:
ni2 = A0.T3. exp(-EG/KT)

Trong :
A0 : S Avogadro=6,203.1023
T : Nhit tuyt i ( Kelvin)
K : Hng s Bolzman=8,62.10-5 eV/0K
EG : Chiu cao ca di cm.
Di dn in
in t trong
di dn in
Mc fermi
Di ha tr
nhit thp (00K)
L trng trong
Di ha tr
nhit cao (3000K)
Hnh 3
Ta gi cht bn dn c tnh cht n=p l cht bn dn ni bm hay cht bn dn

thun. Thng thng ngi ta gp nhiu kh khn ch to cht bn dn loi ny.
Trang 23
Bin son: Trng Vn Tm
II. CHT BN DN NGOI LAI HAY C CHT PHA:

(Doped/Extrinsic Semiconductor)
1. Cht bn dn loi N: (N - type semiconductor)

Gi s ta pha vo Si thun nhng nguyn t thuc nhm V ca bng phn loi tun
hon nh As (Arsenic), Photpho (p), Antimony (Sb). Bn knh nguyn t ca As gn
bng bn knh nguyn t ca Si nn c th thay th mt nguyn t Si trong mng tinh th.
Bn in t ca As kt hp vi 4 in t ca Si ln cn to thnh 4 ni ha tr, Cn d li
mt in t ca As. nhit thp, tt c cc in t ca cc ni ha tr u c nng
lng trong di ha tr, tr nhng in t tha ca As khng to ni ha tr c nng
lng ED nm trong di cm v cch dy dn in mt khang nng lng nh chng
0,05eV.
Si
Si
in t tha ca As
trong di cm
Si
E
Di dn in
0,05eV
Si
As
Si
1,12eV
Si
Si
Si
Hnh 4: Tinh th cht bn dn nhit cao (T = 3000K)
Mc fermi tng
in t tha ca As
Di ha tr
nhit T = 00K
Gi s ta tng nhit ca tinh th, mt s ni ha tr b gy, ta c nhng l trng

trong di ha tr v nhng in t trong di dn in ging nh trong trng hp ca cc
cht bn dn thun. Ngoi ra, cc in t ca As c nng lng ED cng nhn nhit nng
tr thnh nhng in t c nng lng trong di dn in. V th ta c th coi nh hu
ht cc nguyn t As u b Ion ha (v khang nng lng gia ED v di dn in rt
nh), ngha l tt c cc in t lc u c nng lng ED u c tng nng lng
tr thnh in t t do.
E
Di dn in
Di ha tr
Hnh 5
Trang 24
Bin son: Trng Vn Tm
Nu ta gi ND l mt nhng nguyn t As pha vo (cn gi l nhng nguyn t

cho donor atom).
Ta c: n = p + ND
Vi
n: mt in t trong di dn in.
P: mt l trng trong di ha tr.
Ngi ta cng chng minh c: n.p = ni2 (n<p)

ni: mt in t hoc l trng trong cht bn dn thun trc khi pha.
Cht bn dn nh trn c s in t trong di dn in nhiu hn s l trng trong

di ha tr gi l cht bn dn loi N.
2. Cht bn dn loi P:
Thay v pha vo Si thun mt nguyn t thuc nhm V, ta pha vo nhng nguyn t
thuc nhm III nh Indium (In), Galium (Ga), nhm (Al),... Bn knh nguyn t In gn
bng bn knh nguyn t Si nn n c th thay th mt nguyn t Si trong mng tinh th.
Ba in t ca nguyn t In kt hp vi ba in t ca ba nguyn t Si k cn to thnh 3
ni ha tr, cn mt in t ca Si c nng lng trong di ha tr khng to mt ni vi
Indium. Gia In v Si ny ta c mt trang thi nng lng trng c nng lng EA nm
trong di cm v cch di ha tr mt khong nng lng nh chng 0,08eV.
Si
L trng
Si
Si
In
Si
Si
Si
Ni ha tr
khng c
thnh lp
Si
Hnh 6
nhit thp (T=00K), tt c cc in t u c nng lng trong di ha tr. Nu

ta tng nhit ca tinh th s c mt s in t trong di ha tr nhn nng lng v
vt di cm vo di dn in, ng thi cng c nhng in t vt di cm ln chim
ch nhng l trng c nng lng EA.
E
Trang 25
Di dn in
Bin son: Trng Vn Tm
Nu ta gi NA l mt nhng nguyn t In pha vo (cn c gi l nguyn t

nhn), ta cng c:
p = n + NA
p: mt l trng trong di ha tr.
n: mt in t trong di dn in.
Ngi ta cng chng minh c:

n.p = ni2 (p>n)
ni l mt in t hoc l trng trong cht bn dn thun trc khi pha.
Cht bn dn nh trn c s l trng trong di ha tr nhiu hn s in t trong di

dn in c gi l cht bn dn loi P.
Nh vy, trong cht bn dn loi p, ht ti in a s l l trng v ht ti in thiu
s l in t.
3. Cht bn dn hn hp:
Ta cng c th pha vo Si thun nhng nguyn t cho v nhng nguyn t nhn
c cht bn dn hn hp. Hnh sau l s nng lng ca cht bn dn hn hp.
Di dn in
ED
ND
ED
EA
NA
EA
Di ha tr
nhit thp
(T = 00K)
nhit cao
(T = 3000K)
Hnh 8
Trang 26
Bin son: Trng Vn Tm
Trong trng hp cht bn dn hn hp, ta c:

n+NA = p+ND
n.p = ni2
Nu ND > NA => n>p, ta c cht bn dn hn hp loi N.
Nu ND < NA => n<p, ta c cht bn dn hn hp loi P.
III. DN SUT CA CHT BN DN:

Di tc dng ca in trung, nhng in t c nng lng trong di dn in di
chuyn to nn dng in In, nhng cng c nhng in t di chuyn t mt ni ha tr
b gy n chim ch trng ca mt ni ha tr b gy. Nhng in t ny cng to ra
mt dng in tng ng vi dng in do l trng mang in tch dng di chuyn
ngc chiu, ta gi dng in ny l Ip. Hnh sau y m t s di chuyn ca in t (hay
l trng) trong di ha tr nhit cao.
L trng
in t trong di ha tr di chuyn v
bn tri to l
trng mi
Ni ha tr b gy
Hnh 9
L trng mi
L
trng mi
Ni ha tr mi b gy
Trang 27
Hnh 10
Bin son: Trng Vn Tm
Vy ta c th coi nh dng in trong cht bn dn l s hp thnh ca dng in

do nhng in t trong di dn in (a s i vi cht bn dn loi N v thiu s i vi
cht bn dn loi P) v nhng l trng trong di ha tr (a s i vi cht bn dn loi P
v thiu s i vi cht bn dn loi N).
Dng in t trong
di dn in
Dng in t trong
di dn in
Cht bn dn thun
Dng in t
trong di ha tr
Dng l trng
Hnh 11
Tng ng vi nhng dng in ny, ta c nhng mt dng in J, Jn, Jp sao

cho: J = Jn+Jp
Ta chng minh c trong kim loi:
J = n.e.v = n.e..E
Tng t, trong cht bn dn, ta cng c:

Jn=n.e.vn=n.e. n.E
Jp=p.e.vp=p.e.p.E
(Mt dng in tri ca in t, n l linh ng ca in t,

n l mt in t trong di dn in)
(Mt dng in tri ca l trng, p l linh ng ca l
trng, p l mt l trng trong di ha tr)
Nh vy: J=e.(n.n+p.p).E
Theo nh lut Ohm, ta c:
J = .E
=> = e.(n.n+p.p) c gi l dn sut ca cht bn dn.
Trang 28
Bin son: Trng Vn Tm
Trong cht bn dn loi N, ta c n>>p nn n = n.n.e

Trong cht bn dn loi P, ta c p>>n nn p = n.p.e
IV. C CH DN IN TRONG CHT BN DN:

Di tc dng ca in trng, cc in t v l trng di chuyn vi vn tc trung
bnh vn=n.E v vp=p.E.
S in t v l trng di chuyn thay i theo mi thi im, v ti mi thi im c
mt s in t v l trng c sinh ra di tc dng ca nhit nng. S in t sinh ra
trong mi n v thi gian gi l tc sinh to g. Nhng in t ny c i sng trung
bnh n v trong khi di chuyn in t c th gp mt l trng c cng nng lng v ti
hp vi l trng ny. Nu gi n l mt in t, trong mt n v thi gian s in t b
mt i v s ti hp l n/n. Ngoi ra, trong cht bn dn, s phn b ca mt in t
v l trng c th khng u, do c s khuch tn ca in t t vng c nhiu in t
sang vng c t in t.
Xt mt mu bn dn khng u c mt in t c phn b nh hnh v. Ti
mt im M trn tit din A, s in t i ngang qua tit din ny (do s khuch tn) t l
vi dn/dx, vi din tch ca in t v vi tit din A.
vkt
x
Hnh 12
Dng in khuch tn ca in t i qua A l:
In kt = D n .e.
dn
A<0
dx
Dn c gi l hng s khuch tn ca in t.
Suy ra mt dng in khuch tn ca in t l:

Jn kt = e.D n .
dn
dx
Tng t, trong mt giy c
p
l trng b mt i, vi p l mt l trng v p l l i
p
sng trung bnh ca l trng.

Dng in khuch tn ca l trng trong mu bn dn trn l:
dp
Ip kt = D p .e. .A > 0
dx
V mt dng in khuch tn ca l trng l:
Trang 29
Bin son: Trng Vn Tm
dp
dx
D p D n KT
T
=
=
= VT =
p
n
11.600
e
Jp kt = e.D p .
Vi:
K l hng s Boltzman = 1,382.10-23J/0K

T l nhit tuyt i.
H thc ny c gi l h thc Einstein.
nhit bnh thng (3000K): VT=0,026V=26mV
V. PHNG TRNH LIN TC:

Xt mt hnh hp c tit din A, chiu di dx t trong mt mu bn dn c dng
in l trng Ip i qua. Ti mt im c honh x, cng dng in l Ip. Ti mt
c honh l x+dx, cng dng in l Ip+dIp. Gi P l mt l trng trong hnh
hp, p l i sng trung bnh ca l trng. Trong mi giy c
p
l trng b mt i do s
p
ti hp. Vy mi giy, in tch bn trong hp gim i mt lng l:

G 1 = e.A.dx.
p
(do ti hp)
p
ng thi in tch trong hp cng mt i mt lng:

G2=dIp (do khuch tn).
dx
A
Ip
Ip+dIp
x+dx
Ip
Gi g l mt l trng c sinh ra do tc dng nhit, trong mi giy, in tch trong hp
Hnh 13
tng ln mt lng l:
T1=e.A.dx.g
Vy in tch trong hp bin thin mt lng l:
p
T1 (G 1 + G 2 ) = e.A.dx.g e.A.dx. dIp
p
bin thin bng: e.A.dx.
dp
dt
Vy ta c phng trnh:
p dIp 1
dp
=g
.
(1)
p dx e.A
dt
Nu mu bn dn trng thi cn bng nhit v khng c dng in i qua, ta c:
Trang 30
Bin son: Trng Vn Tm
dp
= 0; dIp=0; P=P0=hng s
dt
Phng trnh (1) cho ta:
P
p
g= 0
0=g
p
p
Vi P0 l mt l trng trng thi cn bng nhit. Thay tr s ca g vo phng trnh

(1) v rng p v IP vn ty thuc vo thi gian v khong cch x, phng trnh (1) tr thnh:
p p 0 I p 1
p
(2)
=
.
p
t
x eA
Gi l phng trnh lin tc.
Tng t vi dng in t In, ta c:
n n 0 I n 1
n
=
.
(3)
t
n
x eA
TD: ta gii phng trnh lin tc trong trng hp p khng ph thuc vo thi gian v
dng in Ip l dng in khuch tn ca l trng.
dp
dp
Ta c:
= 0 v I p = D p .eA.
dx
dt
P-P0
2
P(x0)-P0
dIp
d p
Do ,
= D p .eA. 2
dx
dx
Phng trng (2) tr thnh:
d 2 p P P0 P P0
= 2
=
dx 2 D p . p
Lp
Trong , ta t L p = D p . p
Nghim s ca phng trnh (4) l:
x
Lp
Lp
x0
x
Hnh 14
P P0 = A 1 .e + A 2 .e
V mt l trng khng th tng khi x tng nn A1 = 0
Do :
P P0 = A 2 .e
Lp
ti x = x0.
P-P0
Mt l trng l p(x0),
Do :
P( x 0 ) P0 = A 2 .e
Lp
P(x0)-P0
Suy ra, nghim ca phng trnh (4) l:

P( x ) P0 = [P( x 0 ) P0 ].e
xx0
Lp
x0
x
Hnh 15
Trang 31
Bin son: Trng Vn Tm
Chng IV
NI P-N V DIODE
(THE P-N JUNCTION AND DIODES)
Ni P-N l cu trc c bn ca linh kin in t v l cu trc c bn ca cc loi
Diode. Phn ny cung cp cho sinh vin kin thc tng i y v c ch hot ng
ca mt ni P-N khi hnh thnh v khi c phn cc. Kho st vic thit lp cng thc
lin quan gia dng in v hiu in th ngang qua mt ni P-N khi c phn cc. Tm
hiu v nh hng ca nhit ln hot ng ca mt ni P-N cng nh s hnh thnh
cc in dung ca mi ni. Sinh vin cn hiu thu o ni P-N trc khi hc cc linh
kin in t c th. Phn sau ca chng ny trnh by c im ca mt s Diode thng
dng, trong , diode chnh lu v diode zenner c ch trng nhiu hn do tnh ph
bin ca chng.
I. CU TO CA NI P-N:
Hnh sau y m t mt ni P-N phng ch to bng k thut Epitaxi.
SiO2
(Lp cch in)
(1)
(2)
Si-n+
Si-n+
(Thn)
SiO2
Lp SiO2
b ra mt
SiO2
Anod
(3)
Kim loi
SiO2
(4)
P
Si-n+
Si-n+
Catod
Kim loi
Hnh 1
Trc tin, ngi ta dng mt thn Si-n+ (ngha l pha kh nhiu nguyn t cho).
Trn thn ny, ngi ta ph mt lp cch in SiO2 v mt lp verni nhy sng. Xong
ngi ta t ln lp verni mt mt n c l trng ri dng mt bc x chiu ln mt
n, vng verni b chiu c th ra c bng mt loi axid v cha ra mt phn Si-n+,
phn cn livn c ph verni. Xuyn qua phn khng ph verni, ngi ta cho khuch
tn nhng nguyn t nhn vo thn Si-n+ bin mt vng ca thn ny thnh Si-p. Sau
Trang 32
Bin son: Trng Vn Tm
cng, ngi ta ph kim loi ln cc vng p v n+ v hn dy ni ra ngoi. Ta c mt

ni P-N c mt ni gia vng p v n+ thng.
Khi ni PN c thnh lp, cc l trng trong vng P khuch tn sang vng N v
ngc li, cc in t trong vng N khuch tn sang vng P. Trong khi di chuyn, cc
in t v l trng c th ti hp vi nhau. Do , c s xut hin ca mt vng hai
bn mi ni trong ch c nhng ion m ca nhng nguyn t nhn trong vng P v
nhng ion dng ca nguyn t cho trong vng N. cc ion dng v m ny to ra mt
in trng Ej chng li s khuch tn ca cc ht in, ngha l in trng Ei s to ra
mt dng in tri ngc chiu vi dng in khuch tn sao cho dng in trung bnh
tng hp trit tiu. Lc , ta c trng thi cn bng nhit. Trn phng din thng k, ta
c th coi vng c nhng ion c nh l vng khng c ht in di chuyn (khng c in
t t do vng N v l trng vng P). Ta gi vng ny l vng khim khuyt hay vng
him (Depletion region). Tng ng vi in trng Ei, ta c mt in th V0 hai bn
mt ni, V0 c gi l ro in th.
+
+
N
V0
-
x1
- -
Ei
+
+
+
x2
V0= Ro in th
Ti mi ni
x1
x2
Hnh 2
Tnh V0: ta n dng in khuch tn ca l trng:

dp
>0
dx
v dng in tri ca l trng:
J ptr = e.p. p .E i < 0
J pkt = e.D p .
Khi cn bng, ta c:
Jpkt+Jptr = 0
Trang 33
Bin son: Trng Vn Tm
Hay l: e.D p .
dp
= e.p. p .E i
dx
D p dp
= E i .dx
.
p p
Dp
p
V E i =
= VT =
KT
e
dV
dx
Do : dV = VT .
dp
p
Ly tch phn 2 v t x1 n x2 v rng ti x1 in th c chn l 0volt, mt

l trng l mt Ppo vng P lc cn bng. Ti x2, in th l V0 v mt l trng
l Pno vng N lc cn bng.
V0
dV = VT
PPo
M: Pn o
Pn o
dp
p
n i2
v PPo N A
ND
PP
Nn: V0 = VT log o
Pn
o
Hoc: V0 =
KT N D N A
log
2
e
ni
Tng t nh trn, ta cng c th tm V0 t dng in khuch tn ca in t v

dng in tri ca in t.
dn
+ e.n. n .Ei = 0
dx
Thng thng V0 0,7 volt nu ni P-N l Si
V0 0,3 volt nu ni P-N l Ge
e.Dn
Vi cc hp cht ca Gallium nh GaAs (Gallium Arsenide), GaP (Gallium

Phospho), GaAsP (Gallium Arsenide Phospho), V0 thay i t 1,2 volt n 1,8 volt.
Thng ngi ta ly tr trung bnh l 1,6 volt.
II. DNG IN TRONG NI P-N KHI C PHN

CC:
Ta c th phn cc ni P-N theo hai cch:
Trang 34
Bin son: Trng Vn Tm
- Tc dng mt hiu in th gia hai cc ca ni sao cho in th vng P ln hn

vng N mt tr s V. Trng hp ny ta ni ni P-N c phn cc thun (Forward
Bias).
- Nu in th vng N ln hn in th vng P, ta ni ni P-N c phn cc
nghch (Reverse Bias).
1. Ni P-N c phn cc thun:
+
Dng in t
Vng him
+ V0 I
R
(Gii hn dng
in)
VS +
V
P
V
Jnn
Jnp
Jnn
V0
VB
x1
N
Jpp
x1
x2
Hnh 3
Khi cha c phn cc, ngang mi ni ta c mt ro in th V0. Khi phn cc

thun bng hiu in th V th ro in th gim mt lng V v tr thnh VB = V0-V, do
ni P-N mt thng bng. L trng khuch tn t vng P sang vng N to ra dng in
Ip. in t khuch tn t vng N sang vng P to ra dng in In. Dng in I qua ni PN l : I = I p + I n
Dng in I khng ph thuc vo thi gian v v tr ca tit din A v ta c mt
trng thi thng xuyn nhng dng in In v Ip ph thuc vo v tr ca tit din.
Trong vng P xa vng him, l trng tri di tc dng ca in trng to nn
dng Jpp. Khi cc l trng ny n gn vng him, mt s b ti hp vi cc in t t
vng N khuch tn sang. V vng him rt mng v khng c in t nn trong vng ny
Trang 35
Bin son: Trng Vn Tm
cc l trng khuch tn thng ngang qua m khng b mt v tip tc khuch tn sang

vng N nhng b mt ln v c s ti hp vi cc in t trong vng ny.
Tng t, s khuch tn ca in t t vng N sang vng P cng tun theo qui ch
trn. Ta l cc th nhn mt trc i xng v tng s cc dng in l trng v
dng in t phi bng mt hng s.
Ta c:
Jpp (x1) = Jpn(x2)

Jnp (x1) = Jnn(x2)
Dng in J ti mt tit din bt k l hng s. Vy ti x1 hoc x2 ta c:

J = Jpp(x1) + Jnp (x1) = Jpn(x2) + Jnn(x2)
Dng in Jpn l dng khuch tn cc l trng, nn c tr s ti tit din x l:

dPn ( x )
dx
Trong , Pn(x) l mt l trng trong vng N ti im x. Ta tnh Pn(x)
Ta dng phng trnh lin tc:
Pn Pn 0 I p 1
Pn
=
.
x e.A
p
t
J pn ( x ) = e.D p .
V dng in Jpn khng ph thuc vo thi gian nn phng trnh tr thnh:

d 2 Pn Pn Pn 0
=
Trong L p = D p . p
dx 2
L2p
V c nghim s l: Pn ( x) Pn0 = Pn ( x 2 ) Pn0 .e

Suy ra, J pn ( x 2 ) = e.D p
dPn
dx
=
x =x 2
e.D p
Lp
[P (x
n
x x2
Lp
) Pn 0
Ta chp nhn khi c dng in qua mi ni, ta vn c biu thc: dv = VT
dp
nh trong
p
trng hp ni cn bng.
Ly tch phn hai v t x1 n x2 ta c:

VB
dv = V
pn ( x 2 )
p p ( x1 ) p p0
dp
p
Ta c:
Pp
VB = V0 V = VT log 0
Pn
0
P (x )
Suy ra: V = VT log n 2
Pn
0
M:
Trang 36
Bin son: Trng Vn Tm

V
Nn:
Pn ( x 2 ) = Pn 0 .e VT
Do : J pn ( x 2 ) = e.D p .
1
P( x 2 ) Pn 0
Lp
VV
J pn ( x 2 ) = e. .Pn 0 .e T 1
Lp
Tng t, ta c:
1
J np ( x1 ) = e.D n .
n p ( x1 ) n p 0
Ln
Dp
Dn
.n p 0 e VT 1
Ln
Suy ra, mt dng in J trong mi ni P-N l:

J = J pn ( x 2 ) + J np ( x1 )
J np ( x1 ) = e.
V
VT
DP
Dn
J = e .p no +
.n po .e 1
Ln

LP
Nh vy, dng in qua mi ni P-N l:
VT
DP
Dn
I = A .e
.p no +
.n po . e 1
Ln

LP
D
D
t: I 0 = A.e. P .p no + n .n po
Ln
LP
V
Ta c: I = I 0 e VT 1
Phng trnh ny c gi l phng trnh Schockley

kT D p D n
=
=
Trong : VT =
e
p n
Vi
k = 1,381.10 23 J / 0 K l hng s Boltzman
e = 1,602.10 19 coulomb , l in tch ca electron
T l nhit tuyt i.
nhit bnh thng, T=2730K, VT=0,026 volt. Khi mi ni chuyn vn bnh

V
V
> 10 e VT >> 1
thng, V thay i t 0,3 V n 0,7 V ty theo mi l Ge hay Si,
VT
Vy, I I 0 .e
V
VT
Ghi ch: Cng thc trn ch ng trong trng hp dng in qua mi ni kh ln

(vng c tuyn V-I thng, xem phn sau); vi dng in I tng i nh (vi mA tr
xung), ngi ta chng minh c dng in qua mi ni l:
Trang 37
Bin son: Trng Vn Tm
VV
I = I 0 e T 1
Vi = 1 khi mi ni l Ge
= 2 khi mi ni l Si
2. Ni P-N khi c phn cc nghch:

Ion m
Ion dng
- -
Dng electron (khc 0)
+
+
+
Ro in th VB=VS
R
V
VB
V0
- VS +
Hnh 4
Khi ni P-N c phn cc nghch, ro in th tng mt lng V. L trng v in

t khng th khuch tn ngang qua mi ni. Tuy nhin, di tc dng ca nhit, mt s t
in t v l trng c sinh ra trong vng him to ra mt dng in c chiu t vng N
sang vng P. V in t v l trng sinh ra t nn dng in ngc rt nh, thng chng
vi chc A hay nh hn. l dng in ngc ny l mt hm s ca nhit .
Ngi ta cng chng minh c trong trng hp ni P-N phn cc nghch vi hiu
in th V<0, dng in qua ni l:
VV
I = I 0 e T 1
I0 cng c tr s:
D
D
I 0 = A.e. P . p no + n .n po
Ln
LP
Thng thng, e
V
VT
<< 1 nn I # I0
Th d: Xem mch sau y
Trang 38
Bin son: Trng Vn Tm
+5V
D2
+ V1 -
+ V2 -
D1
Hnh_5
D1 v D2 l 2 ni P-N Si. Tm in th V1 v V2 xuyn qua ni.

Gii: Dng in qua 2 ni P-N l nh nhau. Ch l dng in qua D2 l dng
thun v dng qua D1 l dng nghch.
VV
Vy: I = I0 e T 1 = I0 vi = 2 v VT = 0,026V
V2
0, 052
e
=2
V2 = 0,693.0,052 = 0,036(V)
Do , in th ngang qua ni phn cc nghch l:

V1 = 5V2 =5 0,036 = 4,964 (V)
I0 l dng in bo ha ngc. Dng in trong ni P-N c th din t bng th

sau y, c gi l c tuyn V-I ca ni P-N.
Khi hiu th phn cc thun cn nh, dng in I tng chm. Khi hiu th phn cc
thun ln, dng in I tng nhanh trong lc hiu in th hai u mi ni tng rt t.
Khi hiu th phn cc nghch cn nh, ch c 1 dng in r I0 chy qua. Khi hiu
in th phn cc nghch ln, nhng ht ti in sinh ra di tc dng ca nhit c
in trng trong vng him tng vn tc v c nng lng rt nhiu in t khc t
cc ni ha tr. C ch ny c chng cht, sau cng ta c mt dng in ngc rt ln, ta
ni ni P-N trung vng ph hy theo hin tng tuyt (avalanche).
Trang 39
Bin son: Trng Vn Tm
Ge
Si
V
0,7V
0,3V
Vi chc A
Si
Ge
Phn cc nghch
P
N
Phn cc thun
P
N
- V<0 +
- V>0 +
I<0
I>0
Hnh 6
III. NH HNG CA NHIT LN NI P-N:

1. Dng in bo ha ngc I0 ty thuc vo nng cht pha, din tch mi ni v
nht l nhit .
Thng thng ta thy rng I0 s tng ln gp i khi nhit mi ni tng ln 100C
t 25
I 0 (t C ) = I 0 (25 C ).2 10 vi t l nhit (0C)

0
Hnh sau y m t s bin thin ca dng in bo ha ngc theo nhit .

-8
0
-7
V
-6
-5
250C
350C
450C
550C
-4
-3
I0
-2
-1
1
2
3
4
5
6
7
8
Hnh 7
Th d: 1N914B l diode Si chuyn mch nhanh c dng bo ha ngc I0=25nA 250C.

Tm I0 1000C.
Trang 40
Bin son: Trng Vn Tm
p dng: I 0 ( t 0C) = I 0 (250 C).
2 t 25
10
2100 25
10
= 25nA.181
= 25nA.
I 0 (100 0 C) = 4,525A
2. Tnh cht ca ni P-N khi phn cc thun cng thay i theo nhit .
Khi nhit ca ni P-N tng, in th thm ca mi ni gim (ni d dn in
hn). Ngi ta thy rng, khi nhit tng ln 10C in th thm gim 1,8mV diode Si
v gim 2,02mV diode Ge. Mt cch tng qut c th coi nh in th thm gim 2mV
khi nhit tng ln 10C.
VD
= 2mV / 0 C
t
450C
350C
250C
I(mA)
0,66 0,68 0,7
Hnh 8
3. Nhit ca ni P-N cng quyt nh in th sp . Nu nhit tng ln n

mt tr no th in th sp s gim xung rt nh v mi ni P-N khng cn s
dng c na. Nhit ny l 1500C i vi Si v 850C i vi Ge.
IV. NI TR CA NI P-N.
Ngi ta thng ch n hai loi ni tr ca ni P-N
1. Ni tr tnh: (Static resistance).

Ni tr tnh l in tr ni ca ni P-N trong mch in mt chiu. Ngi ta nh
ngha in tr mt chiu mt im phn cc l t s V/I im .
I (mA)
Vs
Rs
P
N
Trang 41
Bin son:
Trng Vn Tm
(Volt)
Hnh 9
Ni tr ca ni ti im Q l:
RD =
V
I
Khi ni P-N phn cc thun cng mnh, dng in I cng ln trong lc in th V

gn nh khng i nn ni tr cng nh.
2. Ni tr ng ca ni P-N: (Dynamic Resistance)

Gi s dng dng in ngang qua ni P-N l IQ tng ng vi mt in th phn
cc thun VQ.
Vs
Rs
I
P
N
Q
V
Hnh 10
Khi V bin thin mt lng V t tr s VQ th I cng bin thin mt lng tng

ng I t tr s IQ. T s
I
bng vi dc ca tip tuyn ti im Q vi c tuyn ca
V
ni P-N.
t:
I 1
=
V rd
;rd c gi l in tr ng ca ni P-N khi phn cc thun.
Vi tn hiu u nh, ta c:
V dV
rd =
=
I
dI Q
VV
Vi I = I 0 .e T 1
Suy ra:
Trang 42
Bin son: Trng Vn Tm
1 VV
dI
= I0
.e T
dV
V
T
Ngoi ra,
V
VV
VT
T
1 = I0 .e
I = I0 .e
I0
Hay I + I0 = I0 .e VT
Do ,
dI I + I0
=
dV VT
V in tr ng l:
dI
VT
rd =
=
dV I + I0
VT
I
0
nhit bnh thng (25 C), VT = 26mV, in tr ng l:
.26mV
rd =
I(mA)
Thng thng, I >> I0 nn rd =
Vi dng in I kh ln, =1, in tr ng rd c th c tnh theo cng thc:

26mV
rd =
I(mA)
nhit bnh thng, nu IQ = 100mA th rd = 0,26. Trong mt ni P-N thc, v

c tip tr gia cc mi ni, in tr gia hai vng bn dn P v N nn in tr ng
thc s ln hn nhiu so vi tr s tnh c, thng thng khong vi chc .
in tr ni
rp
in tr vng P
rd
rn
in tr vng N
rac=ro
rac = rp+rn+rd
= rb+rd
Hnh 11
y cng chnh l kiu mu ca Diode vi tn hiu nh. Ngi ta cng nh ngha

in tr ng khi phn cc nghch
rr =
dV
dI Q
Trang 43
Bin son: Trng Vn Tm
V dc ca tip tuyn ti Q khi ni P-N phn cc nghch rt nh nn in tr

ng rr rt ln, hng M.
V. IN DUNG CA NI P-N.
1. in dung chuyn tip (in dung ni)
Khi ni P-N c phn cc nghch, vng him c ni rng do c s gia tng in
tch trong vng ny. Vi mt s bin thin V ca hiu in th phn cc nghch, in
tch trong vng him tng mt lng Q. Vng him c tc dng nh mt t in gi l
in dung chuyn tip CT.
CT =
Q .A
=
V Wd
Trong , l hng s in mi ca cht bn dn, A l in tch ca ni P-N v Wd

l rng ca vng him.
Khi in th phn cc nghch thay i, rng ca vng him thay i nn in
dung chuyn tip CT cng thay i. Ngi ta chng minh c CT c tr s:
CT =
K
(V0 + VR )n
Trong , K l hng s ty thuc vo cht bn dn v k thut ch to. V0 l ro

in th ca ni P-N (Si l 0,7V v Ge l 0,3V). VR l in th phn cc nghch.
n=
1
1
trong trng hp ni P-N l dc li (linearly graded juntion) v n = trong trng
3
2
hp ni P-N thuc loi dc ng (brupt juntion).

Nu gi Cj(0) l tr s ca CT o c khi VR=0, ta c:
CT =
P
RL
C j (0)
VR
1 +
V
0
- -
+
+
+
+
VR # VS
P
N
- VS +
Ni P-N khi phn cc nghchTrang 44
Hnh 12
Dc li
ng
Bin son:Dc
Trng
Vn Tm
Trong cc ni P-N thng thng, CT c tr s t 5pF n 100pF
2. in dung khuch tn. (Difusion capacitance)

Khi ni P-N c phn cc thun, l trng c khuch tn t vng P sang vng N
v in t khuch tn t vng N sang vng P. S phn b cc ht ti in thiu s hai
bn vng him to nn mt in dung gi l in dung khuch tn CD.. Ngi ta chng
minh c in dung khuch tn CDt l vi dng in qua ni P-N theo cng thc:
CD =
I
VT
Trong , = P =
L2P
, l i sng trung bnh ca l trng; = 2 i vi ni P-N l
DP
Si, =1 i vi ni P-N l Ge.

Thng thng, CD c tr s t 2000pF n 15000pF.
VI. CC LOI DIODE THNG DNG

Diode c bn l mt ni P-N. Th nhng, ty theo mt cht tp pha vo cht bn
dn thun ban u, ty theo s phn cc ca diode v mt s yu t khc na m ta c
nhiu loi diode khc nhau v tm ng dng ca chng cng khc nhau.
1. Diode chnh lu:

L diode thng dng nht, dng i in xoay chiu thng l in th 50Hz
n 60Hz sang in th mt chiu. Diode ny ty loi c th chu ng c dng t vi
trm mA n loi cng sut cao c th chu c n vi trm ampere. Diode chnh lu
ch yu l loi Si. Hai c tnh k thut c bn ca Diode chnh lu l dng thun ti a
v in p ngc ti a (in p sp ). Hai c tnh ny do nh sn xut cho bit.
Anod
A
Catod
K
K hiu
P
Hnh 13
Trang 45
Bin son: Trng Vn Tm
Trc khi xem qua mt s s chnh lu thng dng, ta xem qua mt s kiu mu
thng dng ca diode.
Kiu mu mt chiu ca diode. Diode l tng (Ideal diode)
Trong trng hp ny, ngi ta xem nh in th ngang qua diode khi phn cc
thun bng khng v ni tr ca n khng ng k. Khi phn cc nghch, dng r cng
xem nh khng ng k.
Nh vy, diode l tng c xem nh mt ngt (switch): ngt in ng mch khi
diode c phn cc thun v ngt in h mch khi diode c phn cc nghch.
ID
Diode l tng
VD
Hnh 14
ISW
ISW
+ VSW = 0V
ISW
ISW = 0
+ VSW
VSW
VSW
Hnh 15
R
+
VS
+
VS
ID =
+
0V
-
VS
R
ID
c tuyn
V-I
VD
Phn cc thun
Trang 46
Bin son: Trng Vn Tm
R
+
VS
ID = 0
+
VS
+
VD = -VS
-
ID
c tuyn
V-I
VD
Phn cc nghch
Hnh 15
Kiu mu in th ngng (Knee-Voltage model)

Trong kiu mu ny, in th ngang qua diode khi c phn cc thun l mt hng
s v c gi l in th ngng VK (khong 0,3V i vi diode Ge v 0,7 volt i vi
diode Si).
Nh vy, khi phn cc thun, diode tng ng vi mt diode l tng ni tip
vi ngun in th VK, khi phn cc nghch cng tng ng vi mt ngt in h.
ID
ID + VK VDVK
+V -
VD
0
VD<VK ID = 0
+ VK Hnh 16
R
+
VS
Diode l tng
+
VS
+
VK
-
ID =
R
+
VS
VS>VK
VS VK
R
+
VK = VD
-
Hnh 17
Kiu mu diode vi in tr ng:

Khi in th phn cc thun vt qu in th ngng VK, dng in qua diode tng
nhanh trong lc in th qua hai u diode VD cng tng (tuy chm) ch khng phi l
hng s nh kiu mu trn. chnh xc hn, lc ny ngi ta phi ch n gim
th qua hai u in tr ng r0.
Trang 47
Bin son: Trng Vn Tm
+ VD
ID
ID -
ID
Diode thc
VK
VD
r0 =
1
VD
=
o doc I D
V0
VD
V0: in th offset
Diode l tng
+ VD
+ r0 - + V0
ID
VD= V0+r0ID
ID -
Hnh 18 - 19
Th d:
T c tuyn V-I ca diode 1N917(Si), xc nh in tr ng r0 v tm im iu
hnh Q(ID v VD) khi n c dng trong mch hnh bn.
ID (mA)
6
5
4
3
2
1
ID=4,77mA
ID=4,67mA
Vs=15V
Q
Q
0 0,2 0,4 0,6 0,8 0,9
R=3K
ID=?
+
VD=?
-
VD(volt)
Hnh 20
Gii:
Bc 1: dng kiu in th ngng:
V VK 15 0,7
I 'D = S
=
= 4,77 mA
R
3 K
Vs=15V
R=3K
ID=?
+
VD=0,7V
-
Hnh 21
Trang 48
Bin son: Trng Vn Tm
Bc 2: vi ID =4,77mA, ta xc nh c im Q (VD=0,9V)
Bc 3: v tip tuyn ti Q vi c tuyn tm in th offset V0.
V0=0,74V
Bc 4: Xc nh r0 t cng thc:
VD
0,9 0,74 0,16
r0 =
=
=
32
DI D
4,77
4,77
ID
Bc 5: Dng kiu mu vi in tr ng r0.

VS V 0 15 0,74
=
= 0,00467A
R + r0
3000 + 32
ID=4,67mA
r0=32
ID =
VS=15V
VK= 0,74V
Hnh 22
V VD=V0+r0ID=0,74+0,00467x32=0,89V
Ch :
Trong trng hp diode c dng vi tn hiu nh, in tr ng r0 chnh l in

tr ng rd m ta thy phn trc cng vi in tr ca hai vng bn dn P v N.
r0=rac=rp+rn+rd=rB+rd
26mV
vi rd=
I D mA
V d: Xem mch dng diode 1N917 vi tn hiu nh VS(t)=50 Sint (mV).

Tm in th VD(t) ngang qua diode, bit rng in tr rB ca hai vng bn dn P-N l
10.
50mV
Vs=15V
R=3K
+
-50mV
Vs(t)
+
VD(t)?
-
Hnh 23
Gii:
Theo v d trc, vi kiu mu in th ngng ta c VD=0,7V v ID=4,77mA.
T ta tm c in tr ni rd:
26mV
26mV
=
= 5,45
rd =
ID
4,77 mA
rac=10 + 0,45=10,45
Mch tng ng xoay chiu:
Trang 49
Bin son: Trng Vn Tm
rac
15,45
Vm =
.50
R + rac
15,45 + 3000
in th nh Vdm ngang qua diode l Vdm =

Vdm=0,256 Sint (mV).
Vy in th tng cng ngang qua diode l:
VD(t) = 700mV + 0,256 Sin t (mV).
700mV
Vs(t)
0,256mV
VD(t)
R=3K
rac Vd(t)
t
Hnh 24
Kiu mu tn hiu rng v hiu ng tn s.
Hnh sau y m t mt diode c dng vi tn hiu hnh sin c bin ln.

vS(t)
30V
RL VL(t)
Vs(t)
-
-30V
Bn k dng Diode dn
+30V
+
+
RL
Vs(t)
-30V
+30V
vS(t)
Diode ngng
+30V Bn k m
vL(t)
VL(t)=0 RL
Diode ngng
Vs(t)
Diode dn
-30V
Hnh 25
Trang 50
Bin son: Trng Vn Tm
Khi diode c dng vi ngun tn hiu xoay chiu tn hiu bin ln, kiu mu
tn hiu nh khng th p dng c. v vy, ngi ta dng kiu mu mt chiu tuyn
tnh.
Kt qu l na chu k dng ca tn hiu, diode dn v xem nh mt ngt in
ng mch. na chu k m k tip, diode b phn cc nghch v c vai tr nh mt ngt
in h mch. Tc dng ny ca diode c gi l chnh lu na sng (mch chnh lu
s c kho st k gio trnh mch in t).
p ng trn ch ng khi tn s ca ngun xoay chiu VS(t) thp-th d nh in
50/60Hz, tc chu k T=20ms/16,7ms-khi tn s ca ngun tn hiu ln cao (chu k
hng nano giy) th ta phi quan tm n thi gian chuyn tip t bn k dng sang bn
k m ca tn hiu.
Khi tn s ca tn hiu cao, in th ng ra ngoi bn k dng (khi diode c
phn cc thun), bn k m ca tn hiu cng qua c mt phn v c dng nh hnh
v. Ch l tn s ca ngun tn hiu cng cao th thnh phn bn k m xut hin ng
ra cng ln.
vS(t)
vS(t)
t(ms)
t(ms)
vL(t)
vL(t)
t(ms)
t(ms)
Hnh 26
Hiu ng ny do in dung khuch tn CD ca ni P-N kh ln khi c phn cc

thun (CD c tr t 2000pF n 15000pF). Tc dng ca in dung ny lm cho diode
khng th thay i tc thi t trng thi dn sang trng thi ngng dn m phi mt i
mt thi gian (thng c gi l thi gian hi phc, kiu mu diode phi k n tc
dng ca in dung ca ni.
rB
rd
rB
K
Phn cc thun
rr
K
A
Phn cc nghch
CT
CD
Hnh
Trang
51 27
Bin son: Trng Vn Tm
rB: in tr hai vng bn dn P v N

rd: in tr ng ca ni P-N khi phn cc thun (rt nh)
CD: in dung khuch tn
rr: in tr ng khi phn cc nghch (rt ln)
CT: in dung chuyn tip
thy r hn thi gian hi phc, ta xem p ng ca diode i vi hm nc (dng

sng ch nht) c m t bng hnh v sau.
vS(t)
vf
+ Vd +
RL
Vs(t)
-
-vr
vd
0,7V
t
0
-Vr
if =
Hnh 28
Vf
RL
ir
Vr
ir =
RL
id
I0
tr
Thng thng, gi tr ca tr c th thay i t nh hn 1 nano giy n xp x 1s.

Hiu ng ca tr trn diode chnh lu (sng sin) c din t nh hnh sau. Ngi ta nhn
thy rng, c th b qua thi gian hi phc trn mch chnh lu khi tr<0,1T, vi T l chu
k ca sng sin c chnh lu.
Trang 52
Bin son: Trng Vn Tm
vS(t)
vS(t)
T=2tr
T=10tr
Tn hiu tn
s cao
Tn hiu tn
s thp
id(t)
id(t)
t
t
0
0
Hnh 29
2. Diode tch sng.

Cng lm nhim v nh diode chnh lu nhng thng vi tn hiu c bin nh
v tn s cao. Diode tch sng thng c ch to c dng thun nh v c th l Ge
hay Si nhng diode Ge c dng nhiu hn v in th ngng VK nh.
3. Diode schottky:
Ta thy nh hng ca thi gian hi phc (tc thi gian chuyn mch) ln dng
sng ng ra ca mch chnh lu. rt ngn thi gian hi phc. Cc ht ti in phi di
chuyn nhanh, vng him phi hp. Ngoi ra, cn phi to iu kin cho s ti hp gia
l trng v in t d dng v nhanh chng hn. l nguyn tc ca diode schottky.
M hnh sau y cho bit cu to cn bn ca diode schottky.
Anod
SiO2
Catod
Nhm
Tip xc Ohm
Anod
N.Si
P-thn
Catod
Ro in th Schottky
Hnh 30
Ta thy trong diode schottky, thng ngi ta dng nhm thay th cht bn dn
loi P v cht bn dn loi N l Si. Do nhm l mt kim loi nn ro in th trong diode
schottky gim nh nn in th ngng ca diode schottky khong 0,2V n 0,3V.
l diode schottky c in th bo ho ngc ln hn diode Si v in th sp cng
nh hn diode Si.
Do thi gian hi phc rt nh ( i trng thi nhanh) nn diode schottky c dng
rt ph bin trong k thut s v iu khin.
Trang 53
Bin son: Trng Vn Tm
Id (mA)
Diode
Schottky
Si
0,2
0,4
Si
VD (Volt)
0,6 0,7
Diode
Schottky
Hnh 31
4. Diode n p (diode Zener):

Nh kho st phn trc, khi in th phn cc nghch ca diode ln, nhng
ht ti in sinh ra di tc dng nhit b in trng mnh trong vng him tng vn tc
v ph v cc ni ho tr trong cht bn dn. C ch ny c chng cht v sau cng ta c
dng in ngc rt ln. Ta ni diode ang trong vng b ph hu theo hin tng
tuyt v gy h hng ni P-N.
Ta cng c mt loi ph hu khc do s ph hu trc tip cc ni ho tr di tc
dng ca in trng. S ph hu ny c tnh hon nghch, ngha l khi in trng ht
tc dng th cc ni ho tr c lp li, ta gi hin tng ny l hiu ng Zener.
Hiu ng ny c ng dng ch to cc diode Zener. Bng cch thay i nng
cht pha, ngi ta c th ch to c cc diode Zener c in th Zener khong vi
volt n vi hng trm volt. l khi phn cc thun, c tuyn ca diode Zener ging
ht diode thng (diode chnh lu). c tuyn c dng ca diode Zener l khi phn
cc nghch vng Zener, in th ngang qua diode gn nh khng thay i trong khi
dng in qua n bin thin mt khong rng.
Trang 54
Bin son: Trng Vn Tm
+ VD -
ID (mA)
ID
Vng phn cc nghch
Vng phn cc thun

VD (Volt)
VZ=Vzener
0 VK=0,7V
V=-VD=VZ
I=-ID=IZ
Hnh 32
* nh hng ca nhit :
Khi nhit thay i, cc ht ti in sinh ra cng thay i theo:
Vi cc diode Zener c in th Zener VZ < 5V th khi nhit tng, in th Zener
gim.
Vi cc diode c in th Zener VZ>5V (cn c gi l diode tuyt -diode
avalanche) li c h s nhit dng (VZ tng khi nhit tng).
Vi cc diode Zener c VZ nm xung quanh 5V gn nh VZ khng thay i theo nhit
.
-4
-3
250C
-2
-1
600C
(a) Diode c VZ<5V
ID (mA)
0
VD(Volt)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-40
600C
Hnh 33
-30
250C
-20
-10
ID (mA)
0
VD(Volt)
-5
-10
-15
-20
-25
-30
-35
-40
-45
(b) Diode c VZ>5V
* Kiu mu l tng ca diode Zener:

Trong kiu mu l tng, diode Zener ch dn in khi in th phn cc nghch ln
hay bng in th VZ. in th ngang qua diode Zener khng thay i v bng in th
Trang 55
Bin son: Trng Vn Tm
VZ. Khi in th phn cc nghch nh hn hay bng in th VZ, diode Zener khng dn
in (ID=0).
+ VZ -
+ VZ -
ID
-VZ
0 VD
IZ
VD=-VZ
ID=-IZ
Diode l tng
Hnh 34
Do tnh cht trn, diode zener thng c dng ch to in th chun.

Th d: mch tao in th chun 4,3V dng diode zener 1N749 nh sau:
R=470
VS=615V
IN749
4,3V
R=470
I
VS=615V
X Ti
+
VZ=4,3V
I
X Ti
Hnh 35
Khi cha mc ti vo, th d ngun VS=15V, th dng qua zener l:

I=
VS VZ 15 4,3
=
= 22,8mA
R
470
* Kiu mu ca diode zener i vi in tr ng:

Thc t, trong vng zener, khi dng in qua diode tng, in th qua zener cng
tng cht t ch khng phi c nh nh kiu mu l tng.
Ngi ta nh ngha in tr ng ca diode l:
V VZO
r = Z Z = ZT
I ZT
Trong : VZO l in th nghch bt u dng in tng.
VZT l in th ngang qua hai u diode dng in s dng IZT.
Trang 56
Bin son: Trng Vn Tm
IZ
+ VZ -
ZZ + VZ0
IZ
IZT
Diode l tng
VZ
VZ0 VZT
Hnh 36
5. Diode bin dung: (Varicap Varactor diode)

Phn trn ta thy, s phn b in tch dng v m trong vng him thay i
khi in th phn cc nghch thay i, to ra gia hai u diode mt in dung:
CT =
Q
A
=
V
Wd
in dung chuyn tip CT t l nghch vi rng ca vng him, tc t l nghch

vi in th phn cc.
c tnh trn c ng dng ch to diode bin dung m tr s in dung s thay
i theo in th phn cc nghch nn cn c gi l VVC diode (voltage-variable
capacitance diode). in dung ny c th thay i t 5pF n 100pF khi in th phn
cc nghch thay i t 3 n 25V.
C(pF)
c tuyn ca in dung theo
in th c dng nh sau:
80
60
40
20
0
-2
16
-4
-6
-8
-10
-12
-14
VR(Volt)
Hnh 37
Mt ng dng ca diode l dng n nh mt t in thay i. Th d nh mun thay

i tn s cng hng ca mt mch, ngi ta thay i in th phn cc nghch ca mt
diode bin dung.
Trang 57
Bin son: Trng Vn Tm

R
Ci
Diode
bin dung
Hnh 38
6. Diode hm (Tunnel diode)

c ch to ln u tin vo nm 1958 bi Leo-Esaki nn cn c gi l diode
Esaki. y l mt loi diode c bit c dng khc vi nhiu loi diode khc. Diode
hm c nng pha cht ngoi lai ln hn diode thng rt nhiu (c vng P ln vng
N)
c tuyn V-I c dng nh sau:
I(mA)
nh A
IP
Anod
Diode thng
Diode hm
Catod
B
IV
Thung lng
V(volt)
VP
0,25
0,5V
Hnh 39
Khi phn cc nghch, dng in tng theo in th. Khi phn cc thun, in th
thp, dng in tng theo in th nhng khi ln n nh A (VP IP), dng in li t
ng gim trong khi in th tng. S bin thin nghch ny n thung lng B (VV IV).
Sau , dng in tng theo in th nh diode thng c cng cht bn dn cu to. c
tnh c th ca diode hm ty thuc vo cht bn dn cu to Ge, Si, GaAs (galium
Asenic), GaSb (galium Atimonic) Vng AB l vng in tr m (thay i t khong
50 n 500 mV). Diode c dng trong vng in tr m ny. V tp cht cao nn vng
him ca diode hm qu hp (thng khong 1/100 ln rng vng him ca diode
thng), nn cc ht ti in c th xuyn qua mi ni theo hin tng chui hm nn
c gi l diode hm.
T s Ip/Iv rt quan trng trong ng dng. T s ny khong 10:1 i vi Ge v 20:1
i vi GaAs.
Mch tng ng ca diode hm trong vng in tr m nh sau:
Trang 58
Bin son: Trng Vn Tm
-Rd
RD
Ls
Cd
Hnh 40
Ls: Biu th in cm ca diode, c tr s t 1nH n 12nH.

RD: in tr chung ca vng P v N.
CD: in dung khuch tn ca vng him.
Th d, diode hm Ge 1N2939: Ls=6nH, CD=5pF,Rd=-152, RD=1,5

Diode c vng him hp nn thi gian hi phc nh, dng tt tn s cao. Nhc
im ca diode hm l vng in tr m phi tuyn, vng in tr m li in th thp
nn kh dng vi in th cao, nng cht pha cao nn mun gim nh phi ch to
mng manh. Do , diode hm dn dn b diode schottky thay th.
ng dng thng dng ca diode hm l lm mch dao ng tn s cao.
Bi tp cui chng
1. Dng kiu mu l tng v in th ngng ca diode tnh dng in I1, I2, ID2 trong
mch in sau:
I
I
1
10V
ID2
D1 /Si
R2=350
D /Ge
2
R1=1K
2. Tnh dng in I1 v VO trong mch sau (dng kiu mu l tng v in th ngng ca
diode)
+12V
I
D1 /Si R1=1K
VO
R2=3K
D2/Si
-12V
Trang 59
I2
Bin son: Trng Vn Tm
3. Tnh IZ, VO trong mch in sau khi R2 = 50 v khi R2 = 200. Cho bit Zener s dng
c VZ = 6V.
100
12V
IZ
R2
4. Tnh I, VO trong mch sau, cho bit Zener c VZ = 8V.

+20V
R1=1K
I
Trang 60
R2=3K
Bin son: Trng Vn Tm
Chng V
TRANSISTOR LNG CC
(BIPOLAR JUNCTION TRANSISTOR-BJT)
I. CU TO C BN CA BJT
Transistor lng cc gm c hai mi P-N ni tip nhau, c pht minh nm 1947
bi hai nh bc hc W.H.Britain v J.Braden, c ch to trn cng mt mu bn dn
Germanium hay Silicium.
Hnh sau y m t cu trc ca hai loi transistor lng cc PNP v NPN.
Cc pht
E
Emitter
n+
Cc thu
n-
p+
C
Collecter
B
Transistor PNP
B Cc nn (Base)
Cc pht
E
Emitter
Cc thu
p-
C
Collecter
B Cc nn (Base)
B
Transistor NPN
Hnh 1
Ta nhn thy rng, vng pht E c pha m (nng cht ngoi lai nhiu), vng
nn B c pha t v vng thu C li c pha t hn na. Vng nn c kch thc rt hp
(nh nht trong 3 vng bn dn), k n l vng pht v vng thu l vng rng nht.
Transistor NPN c p ng tn s cao tt hn transistor PNP. Phn sau tp trung kho st
trn transistor NPN nhng i vi transistor PNP, cc c tnh cng tng t.
II. TRANSISTOR TRNG THI CHA PHN CC.

Ta bit rng khi pha cht cho (donor) vo thanh bn dn tinh khit, ta c cht bn
dn loi N. Cc in t t do (cn tha ca cht cho) c mc nng lng trung bnh
gn di dn in (mc nng lng Fermi c nng ln). Tng t, nu cht pha l cht
nhn (acceptor), ta c cht bn dn loi P. Cc l trng ca cht nhn c mc nng lng
trung bnh nm gn di ho tr hn (mc nng lng Fermi gim xung).
Trang 61
Bin son: Trng Vn Tm
Khi ni P-N c xc lp, mt ro in th s c to ra ti ni. Cc in t t do

trong vng N s khuch tn sang vng P v ngc li, cc l trng trong vng P khuch
tn sang vng N. Kt qu l ti hai bn mi ni, bn vng N l cc ion dng, bn vng
P l cc ion m. Chng to ra ro in th.
Hin tng ny cng c thy ti hai ni ca transistor. Quan st vng him, ta
thy rng kch thc ca vng him l mt hm s theo nng cht pha. N rng
vng cht pha nh v hp vng cht pha m.
Hnh sau y m t vng him trong transistor NPN, s tng quan gia mc nng
lng Fermi, di dn in, di ho tr trong 3 vng, pht nn, thu ca transistor.
n+
Vng pht
p
Vng nn
nVng thu
Vng him
E(eV)
n+ Vng pht
p Vng nn
n- Vng thu
Di dn in
Mc Fermi tng cao
Mc Fermi gim
Mc Fermi tng nh
Di ho tr
Di dn in
(Conductance band)
Mc Fermi xp thng
Di ho tr (valence band)
Hnh 2
Trang 62
Bin son: Trng Vn Tm
III. C CH HOT NG CA TRANSISTOR LNG

CC.
Trong ng dng thng thng (khuch i), ni pht nn phi c phn cc thun
trong lc ni thu nn phi c phn cc nghch.
V ni pht nn c phn cc thun nn vng him hp li. Ni thu nn c phn
cc nghch nn vng him rng ra.
Nhiu in t t cc m ca ngun VEE i vo vng pht v khuch tn sang vng
nn. Nh ta bit, vng nn c pha tp cht t v rt hp nn s l trng khng nhiu,
do lng l trng khuch tn sang vng pht khng ng k.
Mch phn cc nh sau:
Phn cc nghch
Phn cc thun
n+
Dng in t
nIC
IE
RE
RC
IB
VEE
VCC
Dng in t
Hnh 3
Do vng nn hp v t l trng nn ch c mt t in t khuch tn t vng pht qua

ti hp vi l trng ca vng nn. Hu ht cc in t ny khuch tn thng qua vng thu
v b ht v cc dng ca ngun VCC.
Cc in t t do ca vng pht nh vy to nn dng in cc pht IE chy t cc
pht E. Cc in t t vng thu chy v cc dng ca ngun VCC to ra dng in thu IC
chy vo vng thu.
Mt khc, mt s t in t l ht in thiu s ca vng nn chy v cc dng ca
ngun VEE to nn dng in IB rt nh chy vo cc nn B.
Nh vy, theo nh lut Kirchoff, dng in IE l tng ca cc dng in IC v IB.
Ta c: I E = I C + I B
Trang 63
Bin son: Trng Vn Tm
Dng IB rt nh (hng microampere) nn ta c th coi nh: IE # IC
IV. CC CCH RP TRANSISTOR V LI DNG

IN.
Khi s dng, transistor c rp theo mt trong 3 cch cn bn sau:
Rp theo kiu cc nn chung (1)
Rp theo kiu cc pht chung (2)
Rp theo kiu cc thu chung (3)
IE
vo
IC
IB
ra
ra
vo
Kiu cc nn chung
IB
IC
Kiu cc pht chung
IE
vo
Hnh 4
ra
Kiu cc thu chung
Trong 3 cch rp trn, cc chung chnh l cc c ni mass v dng chung cho c

hai ng vo v ng ra.
Trong mi cch rp, ngi ta nh ngha li dng in mt chiu nh sau:
Dong ien ngo ra
o li dong ien =
Dong ien ngo vao
li dng in ca transistor thng c dng l li trong cch rp cc pht

chung v cc nn chung. li dng in trong cch rp cc pht chung c cho bi:
Trang 64
Bin son: Trng Vn Tm
h FE DC =
IC
IB
Nh vy:
y:
IC = DC.IB
Nhng: IE = IC + IB = DC.IB+IB
IE = (DC + 1).IB
li dng in trong cch rp cc nn chung c cho bi:
I
h FB DC = C
IE
DC c tr s t vi chc n vi trm, thm ch c th ln n hng ngn. DC c tr

t 0,95 n 0,999 tu theo loi transistor. Hai thng s DC v DC c nh sn xut
cho bit.
T phng trnh cn bn:
IE = IC + IB
Ta c:
IC = IE IB
Chia c hai v cho IC, ta c:
I
I
1
1
1= E B =
IC IC IC IC
IE IB
Nh vy:
1=
1
1
DC DC
Gii phng trnh ny tm DC hay DC, ta c:

DC
DC
DC =
v DC =
1 DC
1 + DC
* Ghi ch: cc cng thc trn l tng qut, ngha l vn ng vi transistor PNP.
Ta ch dng in thc chy trong hai transistor PNP v NPN c chiu nh sau:
NPN
IB
PNP
IC
IB
IE
IC
IE
Hnh 5
Th d:
Mt transistor NPN, Si c phn cc sau cho IC = 1mA v IB = 10A.
Tnh DC, IE, DC.
Gii: t phng trnh:
I
1mA
DC = C , Ta c: dc =
= 100
IB
10A
T phng trnh:
Trang 65
Bin son: Trng Vn Tm
IE = IC + IB, ta c: IE = 1mA + 0,01mA = 1,01mA

I
1mA
DC = C =
= 0,99
V t phng trnh:
I E 1,01mA
Mt transistor Si PNP c DC = 50 khi IE = 1,5mA. Xc nh IC.
Gii:
DC
50
=
= 0,98
DC =
1 + DC 1 + 50
IC = DC.IE = 0,98 x 1,5 = 1,47mA
V. DNG IN R TRONG TRANSISTOR.

V ni thu nn thng c phn cc nghch nn cng c mt dng in r ngc
(bo ho nghch) i qua mi ni nh trong trng hp diode c phn cc nghch.
Dng in r ngc ny c k hiu l ICBO, c nh sn xut cho bit, c m t
bng hnh v sau:
IE = 0
Current (dng in)
RC
Base (cc nn)

Cc E
h
ICBO
VCC
ICBO
Openemitter (cc pht h)

Collector (cc thu)
Hnh 6
y l dng in i t cc thu qua cc nn khi cc pht h. Hnh v sau y cho

ta thy thnh phn cc dng in chy trong transistor bao gm c dng in ICBO.
p
n+
IE
nDCIE
ICBO
IE
IC = DCIE + ICBO
IB
RE
RC
VEE
VCC
Hnh 7
Trang 66
Bin son: Trng Vn Tm
Nh vy, ta c: IC = DCIE + ICBO

Nu ICBO xp x 0, xem nh khng ng k.
Ta c: IC DCIE
l cng thc l tng m ta thy phn trn. Ngoi ta, t phng trnh
dng in cn bn:
IE = IB + IC
Suy ra, IC = DC(IC + IB) + ICBO

IC = DCIC + DC IB + ICBO
Ta tm thy:
DC
I
IC =
I B + CBO
1 DC
1 DC
DC =
Nhng:
1 + DC =
DC
DC
+1
1 + DC =
1 DC
1 DC
DC + 1 DC
1
=
1 DC
1 DC
Thay vo phng trnh trn, ta tm c:

IC = DCIB + (DC + 1)ICBO
Ngi ta t: ICEO = (DC + 1)ICBO v phng trnh trn c vit li:
IC = DCIB + ICEO
Nh vy, ta c th hiu dng in r ICEO nh l dng in chy t cc C qua cc E

ca transistor khi cc B h. Tr s ca ICEO cng c nh sn xut cho bit.
Current (dng in)
RC
Emitter (cc pht)
ICEO
VCC
IB = 0
ICEO
Openbase (cc nn h)
Collector (cc thu)
Cc nn h
Hnh 8
Cc thng s DC, DC, ICBO, ICEO rt nhy vi nhit .
VI. C TUYN V-I CA TRANSISTOR.

Ngi ta thng ch n 3 loi c tuyn ca transistor:
c tuyn ng vo.
c tuyn ng ra
c tuyn truyn
Mch tng qut R

xc nh 3 c tuyn trn c biu dinR2bng m hnh sau:
1
I1
V11 Ng vo
BJT
VTrang
1
67
I2
V2
Bin
Ng ra
V22son: Trng Vn Tm
im cn ch : tu theo loi transistor v cc cch rp m ngun V11, V22 phi mc

ng cc (sao cho ni thu nn phn cc nghch v ni pht nn phn cc thun). Cc
Ampe k I1, I2, cc volt k V1 v V2 cng phi mc ng chiu.
Chng ta kho st hai cch mc cn bn:L
1. Mc theo kiu cc nn chung:

Mch in nh sau:
RE
IE
I1
RC
IC
I2
+
V1
VEE
V2
+ VBE
VCC
VCB
Hnh 10
c tuyn ng vo (input curves).

L c tuyn biu din s thay i ca dng in IE theo in th ng vo VBE vi
VCB c chn lm thng s.
c tuyn c dng nh sau:
VCB = 20V
VCB = 10V
VCB = 01V
VCB = 00V
VCB h
IE (mA)
0,2
0,4
0,6
VBE (Volt)
Hnh 11
Nhn xt:
Trang 68
Bin son: Trng Vn Tm
Khi ni thu nn h, c tuyn c dng nh c tuyn ca diode khi phn cc

thun.
in th ngng (knee voltage) ca c tuyn gim khi VCB tng.
c tuyn ng ra (output curves)

L c tuyn biu din s thay i ca dng in cc thu IC theo in th thu nn
VCB vi dng in cc pht IE lm thng s.
c tuyn c dng nh sau: Ta ch n ba vng hot ng ca transistor.
Vng tc ng: Ni nn pht phn cc thun, ni thu nn phn cc nghch. Trong

vng ny c tuyn l nhng ng thng song song v cch u. Trong cc ng dng
thng thng, transistor c phn cc trong vng tc ng.
Vng tc ng
Vng bo ha
IC (mA)
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
ICBO
0
IE= 0mA
VCB (V)
Vng ngng
Hnh 12
Vng ngng: ni nn pht phn cc nghch (IE=0), ni thu nn phn cc nghch.

Trong vng ny transistor khng hot ng.
Vng bo ho: ni pht nn phn cc thun, ni thu nn phn cc thun. Trong cc
ng dng c bit, transistor mi c phn cc trong vng ny.
2. Mc theo kiu cc pht chung.

y l cch mc thng dng nht trong cc ng dng ca transistor. Mch in nh sau:
Trang 69
Bin son: Trng Vn Tm
RB
I1
IB
I2
+
VBB
RC
IC
V1
VCC
V2
VBE
VCB
Hnh 13
c tuyn ng vo:
Biu din s thay i ca dng in IB theo in th ng vo VBE. Trong hiu th
thu pht VCE chn lm thng s.
IB (A)
c tuyn nh sau:
100
VCE = 0V
VCE = 1V
80
VCE = 10V
60
40
20
0
VBE (V)
0,2
0,4
0,6
0,8
Hnh 14
c tuyn ng ra:
Biu din dng in cc thu IC theo in th ng ra VCE vi dng in ng vo IB
c chn lm thng s.
Dng c tuyn nh sau:
Trang 70
Bin son: Trng Vn Tm
Vng tc ng
IC (mA)
120 A
100 A
80 A
Vng bo ha
60 A
40 A
2
20 A
1
ICEO
0
IB= 0 A
VCE (V)
Vng ngng
Hnh 15
Ta thy cng c 3 vng hot ng ca transistor: vng bo ho, vng tc ng v
vng ngng.
Khi ni tt VBE (tc IB=0) dng in cc thu xp x dng in r ICEO.
c tuyn truyn: (Transfer characteristic curve)

T c tuyn ng vo v c tuyn ng ra. Ta c th suy ra c tuyn truyn ca
transistor. c tuyn truyn biu din s thay i ca dng in ng ra IC theo in th
ng vo VBE vi in th ng ra VCE lm thng s.
c tuyn c dng nh sau:
Trang 71
Bin son: Trng Vn Tm

IC (mA)
VCE =10(V)
ICES = ICBO
VBE (V)
0
.1
.2
.3
6
.4
7
.5
8
Vng
Vng bo ho
tc ng
VBE(sat)
cut-in
Vng ngng
Hnh 16
i vi transistor Si, vng hot ng c VBE nm trong khong 0,5-0,8V. Trong

vng ny, c tuyn truyn c dng hm m. vng bo ho, dng IC tng nhanh khi
VBE thay i. vng ngng, khi VBE cn nh, dng r qua transistor ICES rt nh, thng
xp x ICBO.
Ngay c trong vng hot ng, khi VBE thay i mt lng nh (t dng IB thy i)
th dng IC thay i mt lng kh ln. V th, trong cc ng dng, ngi ta dng in
th cc nn VBE lm in th iu khin v cc B cn gi l cc khin.
3. nh hng ca nhit ln cc c tuyn ca BJT.

Nh ta thy, cc tnh cht in ca cht bn dn u thay i theo nhit . Do
, cc c tuyn ca BJT u thay i khi nhit thay i.
Khi nhit tng, cc dng in r ca cc thu (ICBO,Iceo, ICES) u tng.
Khi nhit tng, cc li in th DC, DC cng tng.
Khi nhit tng, in th phn cc thun (in th ngng) ni nn pht VBE
gim. Thng thng, VBE gim 2,2mV khi nhit tng 10C.
Dng in r ICBO tng gp i khi nhit tng 80C trong transistor Si.
t 825
I CBO ( t C) = I CBO (25 C).2
Tc ng ca nhit nh hng quan trng n im iu hnh ca transistor. N

l nguyn nhn lm cho thng s ca transistor thay i v kt qu l tn hiu c th b
bin dng.
Trang 72
Bin son: Trng Vn Tm

250C
500C
IC (mA)
IB (A)
250A
500C
200A
250C
150A
(2,2mV/0C)
100A
50A
IB =0A
VBE (mV)
645 700
IC (mA)
VCE (Volt)
500C
250C
VCE =15V
(2,2mV/0C)
10
Hnh 17
VBE (mV)
645 700
VII. IM IU HNH NG THNG LY IN

MT CHIU.
Ta xem mch dng transistor BJT NPN trong m hnh cc nn chung nh sau:
RE
RC
+
IE
VBE
VEE
Vo
IC
VCB
VCC
Ra
Hnh 18
xc nh im tnh iu hnh Q v ng thng ly in mt chiu, ngi ta

thng dng 3 bc:
Trang 73
Bin son: Trng Vn Tm
1. Mch ng vo:
Ta c: VBE + REIE - VEE = 0
V VBE
I E = EE
RE
Ch l VBE = 0,7V vi BJT l Si v VBE = 0,3V nu BJT l Ge.
2. T cng thc IC = DCIE IE.

Suy ra dng in cc thu IC.
3. Mch ng ra:
Ta c: VCB - VCC + RCIC = 0
IC =
VCB VCC
+
RC
RC
y l phng trnh ng thng ly in mt chiu (ng thng ly in tnh).

Trn c tuyn ra, giao im ca ng thng ly in vi IE tng ng (thng s) ca
c tuyn ra chnh l im tnh iu hnh Q.
Ta ch rng:
VCC
(Dng in bo ho)
RC
Khi IC = 0 (dng ngng), ta c: VCB = VCC = VOC
Khi VCB = 0 I C = I SH =
IC (mA)
IE = 6mA
IE = 5mA
IE = 4mA
I SH
V
= CC
RC
IE = 3mA
Q
VCBQ
IE = 2mA
IE = 1mA
0mA
VCB(Volt)
VCB=VCC=VOC
Hnh 19
Mt s nhn xt:
thy nh hng tng i ca RC,VCC, IE ln im iu hnh, ta xem v d sau y:
Trang 74
Bin son: Trng Vn Tm
1. nh hng ca in tr cc thu RC: RC = 1,5K; 2K; 3 K

RC
RE = 100
IC
IE = 3mA
VCC = 12V
VEE = 1V
Hnh 20
VEE VBE 1 1,7

=
= 3mA I C
RE
0,1
V
V
* Khi RC = 2 K, I C = CB + CC
RC
RC
V
12
3 = CB + VCB = 6mA
2
2
IE =
Ta c:
IC (mA)
6
5
4
IE = 3mA
2
1
VOC
0
10
12
VCB(Volt)
* Khi RC = 1,5 K (RC gim), gi

RE,21VEE, VCC khng i.
Hnh
IC # IE # 3mA
VCB = VCC - RC.IC = 12 - 1,5x3 =7,5V
V
12
I SH = CC =
= 8mA
R C 1,5
Trang 75
Bin son: Trng Vn Tm
IC (mA)
8
7
6
5
4
IE = 3mA
2
1
VOC
7,5V
0
10
12
VCB(Volt)
Hnh 22
* Khi RC = 3 K (RC tng)
IC # IE =3mA
VCB = VCC - RC.IC = 12 - 3x3 = 3V
V
12
I SH = CC =
= 4mA
RC
3
IC (mA)
IE = 3mA
3
2
1
VOC
0
10
12
VCB(Volt)
Hnh 23
Nh vy, khi gi cc ngun phn cc VCC, VEE v RE c nh, thay i RC, im

iu hnh Q s chy trn c tuyn tng ng vi IE = 3mA. Khi RC tng th VCB gim v
ngc li.
2. nh hng ca ngun phn cc ni thu nn VCC.
Nu gi IE l hng s (tc VEE v RE l hng s), RC l hng s, thay i ngun VCC,
ta thy: Khi VCC tng th VCB tng, khi VCC gim th VCB gim.
Trang 76
Bin son: Trng Vn Tm
Th d:
RE = 100
IC (mA)
RC = 2K
+
VCC = 12V
IC
VCC = 10V
VCC: 10V
12V
14V
VEE = 1V
VCC = 14V
5
4
Q1
Q1
IE =3 (mA)
Q2
2
1
VCB
10
12
14
Hnh 24
3. nh hng ca IE ln im iu hnh:
Nu ta gi RC v VCC c nh, thay i IE (tc thay i RE hoc VEE) ta thy: khi IE
tng th VCB gim (tc IC tng), khi IC gim th VCB tng (tc IC gim).
IC (mA)
I C ( sat ) = I SH =
IE =6 (mA)
Q2
Q1
Q3
2
ICBO
VCC
RC
Q4
IE =5 (mA)
IE =4 (mA)
IE =3 (mA)
Tng
IE =2 (mA)
IE =1 (mA)
Gim
VCB
10
12
14
Hnh 25
Khi IE tng th IC tng theo v tin dn n tr ISH. Transistor dn dn i vo vng

bo ho. Dng ti a ca IC, tc dng bo ho gi l IC(sat). Nh vy:
I C (sat ) = I SH =
VCC
RC
Lc ny, VCB gim rt nh v xp x bng 0V (tht s l 0,2V).

Khi IE gim th IC gim theo. Transistor i dn vo vng ngng, VCB lc gi l VCB(off)
v IC = ICBO.
Trang 77
Bin son: Trng Vn Tm
Nh vy, VCB(off) = VOC = VCC.

Vng bo ho v vng ngng l vng hot ng khng tuyn tnh ca BJT.
i vi mch cc pht chung, ta cng c th kho st tng t.
VIII. KIU MU MT CHIU CA BJT.

Qua kho st phn trc, ngi ta c th dng kiu mu gn ng sau y ca
transistor trong mch in mt chiu:
E
IE
DCIE
IC=DCIEIE
B
Transistor NPN
B
IE
B
Transistor PNP
DCIE
IC=DCIEIE
B
Hnh 26
Tuy nhin, khi tnh cc thnh phn dng in v in th mt chiu ca transistor,

ngi ta thng tnh trc tip trn mch in vi ch l in th thm VBE khi phn cc
thun l 0,3V i vi Ge v 0,7V i vi Si.
Th d 1: tnh IE, IC v VCB ca mch cc nn chung nh sau:
Trang 78
Bin son: Trng Vn Tm

Si
RE
-
IE
0,7V
VEE
IC
VCB
+ -
Si
RE
0,7V
VCC
RC
-
IE
VEE
RC
- +
IC
VCB
VCC
Hnh 27
Ta dng 3 bc:
VEE 0,7
; IC # DC # IE
RE
p dng nh lut kirchoff (ng ra), ta c:
Vi transistor NPN: VCB = VCC - RC.IC; VCB > 0
Vi transistor PNP: VCB = -VCC + RC.IC; VCB <0
Th d 2: Tnh dng in IB, IC v in th VCE ca mch cc pht chung.
Mch nn pht (ng vo): I E =
RB
RC
IB
VBB
0,7V +
+
VCE
RC
IB
V 0,7
Mch nn pht (ng vo): I B = BB
RB
VCC
RB
VBB
IC
+
0,7V -
+
VCE
-
IC
VCC
Hnh 28
Dng IC = DC .IB
Mch thu pht (ng ra)
Trang 79
Bin son: Trng Vn Tm
Vi transistor NPN: VCE = VCC -RC IC >0

Vi transistor PNP: VCE = -VCC + RC.IC <0
y chnh l phng trnh ng thng ly in tnh trong mch cc pht chung.
IX. BJT VI TN HIU XOAY CHIU.

1. M hnh ca BJT:
Ta xem li mch cc nn chung, by gi nu ta a vo BJT mt ngun xoay chiu
-V
+V
VS(t) c bin nh nh hnh v.
V EE
V CC
RE
C1
Tn hiu vo
VS(t)
RC
C2
V
Tn hiu ra
V0(t)
Hnh 29
y l m hnh ca mt mch khuch i rp theo kiu cc nn chung. ng vo

v ng ra, ta c hai t lin lc C1 v C2 c in dung nh th no dung khng XC kh
nh tn s ca ngun tn hiu c th xem nh ni tt (Short circuit) i vi tn hiu
xoay chiu v c th xem nh h mch (open circuit) i vi in th phn cc.
Mch tng ng mt chiu nh sau:
Si
RE
IE
0,7V
VEE
+ -
RC
+
VCB
ICIE
VCC
Hnh 30
y l mch m chng ta kho st phn trc. Ngun in th xoay chiu VS(t)

khi a vo mch s lm cho thng s transistor thay i. Ngoi thnh phn mt chiu
cn c thnh phn xoay chiu ca ngun tn hiu to ra chng ln.
Ngha l:
iB(t) = IB + ib(t)
iC(t) = IC + ic(t)
iE(t) = IE + ie(t)
vCB(t) = VCB + vcb(t)
Trang 80
Bin son: Trng Vn Tm
vBE(t) = VBE + vbe(t)

Thnh phn tc thi = thnh phn DC + thnh phn xoay chiu.
Trong m hnh cc dng in chy trong transistor ta thy: im B nm trong vng

nn c xem nh trung tm giao lu ca cc dng in. Do ni nn pht phn cc thun
nn gia B v E cng c mt in tr ng re ging nh in tr ng rd trong ni P-N
khi phn cc thun nn: re =
26mV
IE
n+
E
p
B
n-
ie
ic
ib
Hnh 31
Ngoi ra, ta cng c in tr rb ca vng bn dn nn pht ( y, ta c th coi nh

y l in tr gia B v B). Do gia B v C phn cc nghch nn c mt in tr r0 rt
ln. Tuy nhin, vn c dng in ic = .ie = ib chy qua v c coi nh mc song song
vi r0.
* l li dng in xoay chiu trong cch mc nn chung:
I
di
i
= ac = C = C = c
I E di E i e
Thng thng hoc ac gn bng DC v xp x bng n v.
* l li dng in xoay chiu trong cch mc cc pht chung.
i
di
i
= ac = h fe = C = C = c
i B di B i b
Thng thng hoc ac gn bng DC v cng thay i theo dng ic.
Tr s , cng c nh sn xut cung cp.
Nh vy, m hnh ca transistor i vi tn hiu xoay chiu c th c m t nh

sau:
.ie = .ib
ie
B
re
ib
rb
ro
32 c th b qua trong m hnh ca

rb thng c tr s khong vi chc B, r0 rtHnh
ln nn
transistor.
Trang 81
Bin son: Trng Vn Tm
2. in dn truyn (transconductance)
Ta thy rng, dng in cc thu IC thay i theo in th nn pht VBE. Ngi ta c
th biu din s thay i ny bng mt c tuyn truyn (transfer curve) ca transistor.
c tuyn ny ging nh c tuyn ca diode khi phn cc thun.
ID(mA)
IC(mA) = IE
ID=IO.exp(VD/VT)
IC=ICES.exp(VBE/VT)
VD(volt)
VBE(volt)
IC(mA)
ID=IO.exp(VD/VT)
Tip tuyn c
dc =gm=IC/VT
gmvbe
vbe
-
VBE(mV)
E
E
Hnh 33
Ngi ta nh ngha in dn truyn ca transistor l:

i c
i (t)
= c
gm =
VBE v be ( t )
V chnh l dc ca tip tuyn vi c tuyn truyn ti im iu hnh Q.
Tng t nh diode, ta cng c:
I C = I CES .e
VBE
VT
Trong , IC l dng in phn cc cc thu;

ICES l dng in r cc thu khi VBE = 0V
KT
(T: nhit Kelvin)
VT =
e
nhit bnh thng (250C), VT = 26mV
Ta c th tnh gm bng cch ly o hm ca IC theo VBE.
V
BE
dI C
I
gm =
= CES .e VT
dVBE
VT
Trang 82
Bin son: Trng Vn Tm
V g m =
IC
( )
VT
nhit bnh thng (250C) ta c: g m =
IC
26mV
3. Tng tr vo ca transistor:
Ngi ta nh ngha tng tr vo ca transistor bng m hnh sau y:
iin
BJT
+
vin
-
v in
i in
R in =
Hnh 34
Ta c hai loi tng tr vo: tng tr vo nhn t cc pht E v tng tr vo nhn t

cc nn B.
Tng tr vo nhn t cc pht E:
ie = -iin
E
vbe = -vin
-
R in =
v in v be
=
i in
ie
Hnh 35
Theo m hnh ca transistor i vi tn hiu xoay chiu, ta c mch tng ng

ng vo nh sau:
E
re
-
re
-
ie
rb
ie
rb
+1
ib
ie
Hnh 36
Trang 83
Bin son: Trng Vn Tm
V ie=(+1)ib nn mch trn c th v li nh hnh pha di bng cch coi nh

dng ie chy trong mch v phi thay rb bng
Vy:
R in =
rb
.
+1
v be
r
r + ( + 1)re
= b + re = b
ie
+1
+1
hie = rb+(+1).re
h
Suy ra: R in = ie
+1
t:
Do >>1, rb nh nn
rb
<< re nn ngi ta thng coi nh:
+1
rb
re
+1
Tng tr vo nhn t cc nn B:
R in = re +
ib = iin
Xem m hnh nh ngha sau (hnh 37):
vbe = vin
-
R in =
v be
ib
Hnh 37
Mch tng ng ng vo:

rb
B
+
ib
re
rb
ib
( + 1).re
ie
ib
Hnh 38
Do ie=(+1)ib nn mch hnh (a) c th c v li nh mch hnh (b).
Trang 84
Bin son: Trng Vn Tm
Vy:
R in =
v be
= rb + ( + 1)re = h ie
ib
Ngi ta t:
r=(1+).rere
Thng thng re>>rb nn: Rin=hie rre
1
26mV 26mV
1
1
Ngoi ra,
;
Vy: r =
v re =
re =
=
=
IC
IE
IC
gm
gm
gm
26mV
v
1
g m v be = i b
Ta ch thm l:
re be =
g m v be = i e i c = i b ;
ie
gm
4. Hiu ng Early (Early effect)

Ta xem li c tuyn ng ra ca transistor trong cch mc cc pht chung. Nm
1952. J.Early thuc phng th nghim Bell nghin cu v hin tng ny c mang
tn ng. ng nhn xt:
nhng gi tr cao ca dng in cc thu IC, dng IC tng nhanh theo VCE (c tuyn c
dc ng).
nhng gi tr thp ca IC, dng IC tng khng ng k khi VCE tng (c tuyn gn nh
nm ngang).
Nu ta ko di c tuyn ny, ta thy chng hi t ti mt im nm trn trc VCE.

im ny c gi l im in th Early VA. Thng thng tr s ny thay i t 150V
n 250V v ngi ta thng coi VA = 200V.
IC(mA)
Early voltage
VCE = -VA = -200V
10
40
VCE(volt)
30
20
50
IC(mA)
Q
ICQ
IC = ICQ
VCE(volt)
0
VCEQ
VCE = VCE -(-VA) = VCE + VA VA

Hnh 39
Trang 85
Bin son: Trng Vn Tm
Ngi ta nh ngha tng tr ra ca transistor:

VCE VCE (VA ) VCE + VA
=
=
r0 =
IC
IC 0
IC
Thng VA>>VCE nn: r0 =
VA 200V
=
IC
IC
5. Mch tng ng xoay chiu ca BJT:

Vi tn hiu c bin nh v tn s khng cao lm, ngi ta thng dng hai kiu
mu sau y:
Kiu hn tp: (hybrid-)
Vi m hnh tng ng ca transistor v cc tng tr vo, tng tr ra, ta c mch

tng ng hn tp nh sau:
ib
ic
rb
gmvbe
ro
vbe
E
Hnh 40(a)
Kiu mu re: (re model)
Cng vi m hnh tng ng xoay chiu ca BJT, cc tng tr vo, tng tr ra, ta
c mch tng ng kiu re. Trong kiu tng ng ny, ngi ta thng dng chung
mt mch cho kiu rp cc pht chung v cc thu chung v mt mch ring cho nn
chung.
-
Kiu cc pht chung v thu chung:
Trang 86
Bin son: Trng Vn Tm

B
ic
ib
C (E)
IE
IB
re
ib
IC
IB
ro
vo
ra
ra
vo
vbe
Kiu cc pht chung
Kiu cc thu chung

E (C)
Hnh 40(b)
Kiu cc nn chung
ic
ie
B
re
ie
IE
ro
IC
vo
Hnh (c)
ra
Kiu cc nn chung
Thng ngi ta c th b ro trong mch tng ng khi RC qu ln.

Kiu thng s h: (h-parameter)
Nu ta coi vbe v ic l mt hm s ca iB v vCE, ta c:
vBE = f(iB,vCE) v iC = f(iB,vCE)
Ly o hm:
v
v
v be = dv BE = BE di B + BE dv CE
v CE
i B
i c = di C =
i C
i
di B + C dv CE
i B
v CE
Trong kiu mu thng s h, ngi ta t:

v
v
h ie = BE ;
h re = BE ;
i B
v CE
h fe = =
i C
i
; h oe = C
i B
v CE
Vy, ta c:
vbe = hie.ib + hre.vce
ic = hfe.ib + hoe.vce
T hai phng trnh ny, ta c mch in tng ng theo kiu thng s h:
Trang 87
Bin son: Trng Vn Tm

ib
hie
hrevce
hfeib
-
vbe
1
h oe
vce
E
Hnh 41
hre thng rt nh ( hng 10-4), v vy, trong mch tng ng ngi ta thng b
hre.vce.
So snh vi kiu hn tp, ta thy rng:

h ie = rb + ( + 1)re = rb + r
Do rb<<r nn hie = r
Nu b qua hre, ta thy:
v
v
i b = be Vy: h fe i b = h fe . be
h ie
h ie
Do ,
g m vbe = h fe ib = h fe
Hay
gm =
Ngoi ra,
r0 =
vbe
;
h fe
h fe
h ie
1
h oe
Cc thng s h do nh sn xut cho bit.
Trong thc hnh, r0 hay
1
mc song song vi ti. Nu ti khng ln lm (khong
h oe
vi chc K tr li), trong mch tng ng, ngi ta c th b qua r0 (khong vi trm
K).
Trang 88
Bin son: Trng Vn Tm

ic
ib
gmvbe
ic
ib
ro
hie
vbe
hfeib
1
h oe
vbe
E
Hnh 42
Mch tng ng n gin: (c th b r0 hoc
1
)
h oe
Trang 89
Bin son: Trng Vn Tm
Bi tp cui chng
1. Tnh in th phn cc VC, VB, VE trong mch:
=100/Si
RE=1K
RC=3K
VC
VE
VEE
2V
VCC
12V
VB
2. Tnh IC, VCE trong mch in:

+6V
RB
430K
+6V
RC
2K
IC
=100/Si
1K RE
3. Tnh VB, VC, VE trong mch in:

+12V
RC
5K
VC
VB
=100/Si
RB
33K
VBB
VE
2V
1K RE
Trang 90
Bin son: Trng Vn Tm
CHNG 6
TRANSISTOR TRNG NG
(FIELD EFFECT TRANSISTOR)
Chng ta kho st qua transistor thng, c gi l transistor lng cc v s
dn in ca n da vo hai loi ht ti in: ht ti in a s trong vng pht v ht ti
in thiu s trong vng nn. transistor NPN, ht ti in a s l in t v ht ti
in thiu s l l trng trong khi transistor PNP, ht ti in a s l l trng v ht ti
in thiu s l in t.
in tr ng vo ca BJT (nhn t cc E hoc cc B) nh, t vi trm n vi
K, trong lc in tr ng vo ca n chn khng rt ln, gn nh v hn. L do l
BJT, ni nn pht lun lun c phn cc thun trong lc n chn khng, li khin
lun lun c phn cc nghch so vi Catod. Do , ngay t lc transistor BJT mi ra
i, ngi ta ngh n vic pht trin mt loi transistor mi. iu ny dn n s ra
i ca transistor trng ng.
Ta phn bit hai loi transistor trng ng:
Transistor trng ng loi ni: Junction FET- JFET
Transistor trng ng loi c cng cch in: Isulated gate FET-IGFET hay
metal-oxyt semiconductor FET-MOSFET.
Ngoi ra, ta cng kho st qua loi VMOS (MOSFET cng sut-Vertical chanel
MOSFET), CMOS v DMOS.
I. CU TO CN BN CA JFET:
M hnh sau y m t hai loi JFET: knh N v knh P.
Trong JFET knh N gm c hai vng n+ l hai vng ngun v thot. Mt vng npha t tp cht dng lm thng l (knh) ni lin vng ngun v vng thot. Mt vng pnm pha di thng l l thn v mt vng p nm pha trn thng l. Hai vng p v pni chung vi nhau to thnh cc cng ca JFET.
Trang 91
Bin son: Trng Vn Tm
Thng l
(knh) NVng
ngun
Vng
cng
P
N+
Vng
thot
N+
Thn p- (c ni vi cng)
Hnh 1
JFET Knh P
K hiu
n
S
p+
D
p+
D
G
nS
Knh p-
Tip xc kim loi

JFET Knh N
p
S
n+
D
n+
D
G
p-
Knh n-
Tip xc kim loi

Hnh 2
S (Source): cc ngun
D (Drain): cc thot
G (Gate): cc cng
Nu so snh vi BJT, ta thy: cc thot D tng ng vi cc thu C, cc ngun S tng

ng vi cc pht E v cc cng G tng ng vi cc nn B.
Trang 92
Bin son: Trng Vn Tm
JFET knh N tng ng vi transistor NPN.

JFET knh P tng ng vi transistor PNP.
D
G
Thot Thu
JFET
Knh N
S
C
B
BJT
NPN
Ngun Pht
E
C
D
G
JFET
Knh P
S
BJT
PNP
E
Cng Nn
Hnh 3
Cng ging nh transistor NPN c s dng thng dng hn transistor PNP do

dng tt hn tn s cao. JFET knh N cng thng dng hn JFET knh P vi cng mt
l do. Phn sau, ta kho st JFET knh N, vi JFET knh P, cc tnh cht cng tng
t.
II. C CH HOT NG CA JFET:

Khi cha phn cc, do nng cht pha khng ng u trong JFET knh N nn ta
thy vng him rng thng l n- v thn p-, vng him hp vng thot v ngun n+.
Vng him
n+
S
Gate
p
Knh n-
n+
D
Thn p-
Hnh 4
Trang 93
Bin son: Trng Vn Tm
By gi, nu ta mc cc ngun S v cc cng G xung mass, ngha l in th

VGS=0V. iu chnh in th VDS gia cc thot v cc ngun, chng ta s kho st dng
in qua JFET khi in th VDS thay i.
V vng thot n+ ni vi cc dng v vng cng G ni vi cc m ca ngun in
VDS nn ni PN vng thot c phn cc nghch, do vng him y rng ra (xem
hnh v)
VDS
VGS = 0V
S
n+
G
p
n-
Ni P-N vng
thot c phn
cc nghch
n+
p-
Hnh 5
ID Dng in t ri khi thng l v

i ra khi vng thot
Vng him rng

IS Dng in t t
ngun S i vo
thng l
Gate
Knh n-
n+ thot
Thn P- (Gate)
Hnh 6
Khi VDS cn nh, dng in t t cc m ca ngun in n vng ngun (to ra

dng IS), i qua thng l v tr v cc dng ca ngun in (to ra dng in thot ID).
Nu thng l c chiu di L, rng W v dy T th in tr ca n l:
Trang 94
Bin son: Trng Vn Tm
R = .
L
; Trong , l in tr sut ca thng l. in tr sut l hm s theo
WT
nng cht pha.
B rng W
Thng l c b dy T
Di L
Hnh 7
ID (mA)
Dng in bo ha thot
ngun
Vng in tr ng thay
i khng tuyn tnh
VGS = 0V
IDSS
Vng bo ha vng dng

in gn nh l hng s
Vng tuyn tnh
VDS (volt)
0
VP (Pinch-off voltage)
Hnh 8
Nhng in t c nng lng cao trong di dn

in xuyn qua vng him vo vng thot
P
Gate
Knh n-
n+ thot
Drain
Thn P- (Gate)
Trang 95
Vng him chm nhau
(thng l b nghn)
Nhng electron b ht v
cc dng ca ngun in
Bin son: Trng Vn Tm
Khi VDS cn nh (vi volt), in tr R ca thng l gn nh khng thay i nn

dng ID tng tuyn tnh theo VDS. Khi VDS ln, c tuyn khng cn tuyn tnh na do
R bt u tng v thng l hp dn. Nu ta tip tc tng VDS n mt tr s no th hai
vng him chm nhau, ta ni thng l b nghn (pinched off).
Tr s VDS thng l bt u b nghn c gi l in th nghn VP (pinched off
voltage). tr s ny, ch c cc in t c nng lng cao trong di dn in mi c
sc xuyn qua vng him vo vng thot v b ht v cc dng ca ngun in VDS
to ra dng in thot ID.
Nu ta c tip tc tng VDS, dng in ID gn nh khng thay i v c gi l
dng in bo ho thot - ngun IDSS (ch : k hiu IDSS khi VGS=0V).
By gi, nu ta phn cc cng-ngun bng mt ngun in th m VGS (phn cc
nghch), ta thy vng him rng ra v thng l hp hn trong trng hp VGS=0V. Do
in tr ca thng l cng ln hn.
VDS
VGS
n+
n-
p
p-
D
n+
Ni P-N vng
thot c phn
cc nghch
Hnh 10
Trang 96
Bin son: Trng Vn Tm

P
Thng l hp
hn nn in
tr ln hn. C
ngha l ID v IS
nh hn cng
mt tr VDS khi
VGS m hn
ID
Gate
Knh n-
n+ thot
Thn P- (Gate)
IDSS
VGS = 0
Dng
bo
ha ID
gim
VGS < 0
VP
Gate
VDS ng vi tr bo
ha gim
Thng l nn+ thot

Thng l nghn
tr VDS thp
hn khi VGS m
v thng l hp
hn
Thn P- (Gate)
Hnh 11
Khi VDS cn nh, ID cng tng tuyn tnh theo VDS, nhng khi VDS ln, thng l b
nghn nhanh hn, ngha l tr s VDS thng l nghn nh hn trong trng hp
VGS=0V v do , dng in bo ho ID cng nh hn IDSS.
Chm c tuyn ID=f(VDS) vi VGS l thng s c gi l c tuyn ra ca JFET
mc theo kiu cc ngun chung.
ID(mA)
VGS = 0V
c tuyn
|VDS| = |VP|-|VGS|
Vng bo ha (vng dng
in hng s)
VGS = -1V
VGS = -2V
VGS = -3V
VGS = -4V
VDS (volt)
VDS=VP=8V
VGS = VGS(off) = -8V

Hnh 12
Khi VGS cng m, dng ID bo ho cng nh. Khi VGS m n mt tr no , vng

him chim gn nh ton b thng l v cc in t khng cn nng lng vt
qua c v khi ID = 0. Tr s ca VGS lc gi l VGS(off). Ngi ta chng minh
c tr s ny bng vi in th nghn.
Trang 97
Bin son: Trng Vn Tm
VDS
VGS( off ) = VP
V Vp chnh l hiu th phn cc ngc cc ni P-N va cho cc vng him

chm nhau. V vy, trong vng bo ho ta c:
VDS + VGS = VP
V ni cng ngun c phn cc nghch, dng in IG chnh l dng in r ngc

nn rt nh, do dng in chy vo cc thot D c xem nh bng dng in ra khi
cc ngun S. ID # IS. Khng c ht ti in di chuyn qua thng l (I = I = 0)
D
Gate
p
n+
S
n+
D
Knh n-
Thn p-
Hnh 13
So snh vi BJT, ta thy:

IE
E
IC IE
C
+
- VCB
IS
- VCE +
VBE
+
- VDS +
I D IS
D
VGS
IG (r) 0
IB nh
B
G
Hnh 14
Th d: mt JFET knh N c IDSS=20mA v VGS(off)=-10V.

Tnh IS khi VGS=0V? Tnh VDS bo ho khi VGS = -2V.
Gii:
Khi VGS=0V ID=IDSS=20mA v ID=IS=20mA
Ta c: VP = VGS( off ) = 10V v VDS = VP VGS = 10 2 = 8V
Trang 98
Bin son: Trng Vn Tm
III. C TUYN TRUYN CA JFET.

Cng ging nh BJT, ngi ta cng c 3 cch rp ca FET (JFET v MOSFET):
mc kiu cc cng chung (common-gate), cc ngun chung (common-source) v cc
thot chung (common-drain).
S
Tn hiu
vo
Tn hiu
ra
Tn hiu
vo
Cng chung
Tn hiu
ra
Tn hiu
vo
Ngun chung
Tn hiu
ra
D
Thot chung
Hnh 15
So snh vi BJT NPN, ta thy c s tng ng nh sau:

Cc cc
Cch mc
FET
FET
BJT
Cc cng chung
Cc ngun chung
Cc thot chung
Cc nn chung
Cc pht chung
Cc thu chung
BJT
Cc thu C
Cc pht E
Cc nn B
Cc thot D
Cc ngun S
Cc cng G
Ngi ta chng minh c khi VDS c tr s lm nghn thng l (JFET hot ng

trong vng bo ho), ID v VGS tho mn h thc:
2
VGS
VGS
I D = I DSS 1
hay I D = I DSS 1 +
VP
VGS( off )
Phng trnh ny c gi l phng trnh truyn ca JFET. Cc thng s ID v

VGS(off) c nh sn xut cho bit.
l: VGS v VGS(off) m trong JFET thng l n v dng trong thng l p.
Ngi ta cng c th biu th s thay i ca dng in thot ID theo in th cng

ngun VGS trong vng bo ho bng mt c tuyn gi l c tuyn truyn bng cch v
ng biu din ca phng trnh truyn trn.
D
+
G
+
VGS
-
V
VGG
ID
VDS
-
V
-
Hnh 16
Trang 99
VDD
Bin son: Trng Vn Tm
12
c tuyn
truyn
c tuyn
ng ra
ID(mA)
VGS = 0V
VGS = -1V
VGS = -2V
VGS = -3V
VGS = -4V
VGS = -6V
-8 -6
-4
-2 0
8
VP
VDS (volt)
VGS = VGS(off) = -8V
VGS(off)
Hnh 17
IV. NH HNG
NG CA NHIT TRN JFET.
Nh ta thy trong JFET, ngi ta dng in trng kt hp vi s phn cc
nghch ca ni P-N lm thay i in tr (tc dn in) ca thng l ca cht bn
dn. cng nh BJT, cc thng s ca JFET cng rt nhy i vi nhit , ta s kho st
qua hai tc ng chnh ca nhit :
Khi nhit tng, vng him gim, do rng ca thng l tng ln, do in
tr ca thng l gim. (ID tng)
Khi nhit tng, linh ng ca cc ht ti in gim (ID gim)
Do thng l tng rng theo nhit nn VGS(off) cng tng theo nhit . Thc
nghim cho thy VGS( off ) hay VP tng theo nhit vi h s 2,2mV/10C.
VGS
T cng thc: I D = I DSS 1
VGS( off )
Cho thy tc dng ny lm cho dng in ID tng ln. Ngoi ra, do linh ng ca
ht ti in gim khi nhit tng lm cho in tr ca thng l tng ln nn dng in
IDSS gim khi nhit tng, hiu ng ny lm cho ID gim khi nhit tng.
Tng hp c hai hiu ng ny, ngi ta thy nu chn tr s VGS thch hp th dng
thot ID khng i khi nhit thay i. Ngi ta chng minh c tr s ca VGS l:
Trang 100
Bin son: Trng Vn Tm
VGS = VP 0,63V vi VP l in th nghn nhit bnh thng.
Cc hnh v sau y m t nh hng ca nhit trn cc c tuyn ra, c tuyn

truyn v c tuyn ca dng ID theo nhit khi VGS lm thng s.
250 450
ID
VGS = 0
VGS = -1V
ID gim
|VGS| = |VP|-0,63V
ID tng
VDS
0
Hnh 18
ID
ID
VGS = -0V
-55 C 25 C +150 C
VGS = -1V
IDSS
|VGS| = |VP|-0,63V
(VDS c nh)
VGS(off
VGS
-100
-50
50
150
100
t0C
|VGS| = |VP|-0,63V
Hnh 19
Ngoi ra, mt tc dng th ba ca nhit ln JFET l lm pht sinh cc ht ti in

trong vng him gia thng l-cng v to ra mt dng in r cc cng IGSS (gate
leakage current). Dng IGSS c nh sn xut cho bit. dng r IGSS chnh l dng in
phn cc nghch ni P-N gia cc cng v cc ngun. Dng in ny l dng in r
cng-ngun khi ni tt cc ngun vi cc thot. Dng IGSS tng gp i khi nhit tng
ln 100C.
Trang 101
Bin son: Trng Vn Tm
I GSS (t 0C ) = I GSS (250 C )2
( t 25 )
10
IGSS
D
G
VDS = 0V
S
VGG
Hnh 20
V. MOSFET LOI HIM (DEPLETION MOSFET: DE

MOSFET)
Ta thy rng khi p mt in th m vo JFET knh N th vng him rng ra. S gia
tng ca vng him lm cho thng l hp li v in tr ca thng l tng ln. Kt qu
sau cng l to ra dng in ID nh hn IDSS.
By gi, nu ta p in th dng VGS vo JFET knh N th vng him s hp li
(do phn cc thun cng ngun), thng l rng ra v in tr thng l gim xung, kt
qu l dng in ID s ln hn IDSS.
Trong cc ng dng thng thng, ngi ta u phn cc nghch ni cng ngun
(VGS m i vi JFET knh N v dng i vi JFET knh P) v c gi l iu hnh
theo kiu him.
JFET cng c th iu hnh theo kiu tng (VGS dng i vi JFET knh N v m
i vi JFET knh P) nhng t khi c ng dng, v mc ch ca JFET l tng tr vo
ln, ngha l dng in IG cc cng - ngun trong JFET s lm gim tng tr vo, do
thng thng ngi ta gii hn tr s phn cc thun ca ni cng - ngun ti a l
0,2V (tr s danh nh l 0,5V).
Trang 102
Bin son: Trng Vn Tm

Phn cc kiu Phn cc kiu
tng
him
(Ti a 0,2V)
+
+ VGG
IGSS
+
VDS
-
+
VGS
VDD
JFET knh N
iu hnh
kiu tng
ID
ID
VGS = 0,2V
IDSS
VGS = 0V
iu hnh
kiu him
VGS = -1V
VGS = -2V
VGS = -3V
VGS
-4V
0 0,2V
VDS
0
Hnh 21
ID
Phn cc kiu Phn cc kiu

tng
him
(Ti a 0,2V)
+
+
VGG
D
G
+
VGS
VGG
VDS
+
VDD
Hnh 22
Tuy JFET c tng tr vo kh ln nhng cng cn kh nh so vi n chn khng.

tng tng tr vo, ngi ta to mt loi transistor trng khc sao cho cc cng
cch in hn cc ngun. Lp cch in l Oxyt bn dn SiO2 nn transistor c gi l
MOSFET.
Ta phn bit hai loi MOSFET: MOSFET loi him v MOSFET loi tng.
Hnh sau y m t cu to cn bn MOSFET loi him (DE - MOSFET) knh N v knh
P.
Trang 103
Bin son: Trng Vn Tm
D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
n+
Knh n-
K hiu
n+
Thn p-
Thn ni vi
ngun
DE-MOSFET knh N
S
Hnh 23
D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
p+
Knh p-
K hiu
p+
Thn n-
Thn ni vi
ngun
DE-MOSFET knh P
S
Hnh 24
Trang 104
Bin son: Trng Vn Tm
Ch rng DE - MOSFET c 4 cc: cc thot D, cc ngun S, cc cng G v thn

U (subtrate). Trong cc ng dng thng thng, thn U c ni vi ngun S.
DE-MOSFET hot ng, ngi ta p mt ngun in VDD vo cc thot v cc
ngun (cc dng ca ngun in ni vi cc thot D v cc m ni vi cc ngun S
trong DE-MOSFET knh N v ngc li trong DE-MOSFET knh P). in th VGS gia
cc cng v cc ngun c th m (DE-MOSFET knh N iu hnh theo kiu him) hoc
dng (DE-MOSFET knh N iu hnh theo kiu tng)
- VDD +
+ VGG S
SiO2
n+
Knh n-
iu
hnh
theo
kiu
him
n+
Thn p-
Tip xc kim
loi cc cng
Vng him do cng m y cc in t

v thot dng ht cc in t v n
Knh n-
n+
thot
Vng him gia

phn cc nghch pv vng thot n+
Thn pHnh 25
Trang 105
Bin son: Trng Vn Tm
- VDD +
- VGG +
S
SiO2
iu
hnh
theo
kiu
tng
nn+
n+
in t tp trung
di sc ht ngun
dng ca cc cng
lm cho in tr
thng l gim
Thn p-
Hnh 26
Khi VGS = 0V (cc cng ni thng vi cc ngun), in t di chuyn gia cc m

ca ngun in VDD qua knh n- n vng thot (cc dng ca ngun in VDD) to ra
dng in thot ID. Khi in th VDS cng ln th in tch m cng G cng nhiu (do
cng G cng in th vi ngun S) cng y cc in t trong knh n- ra xa lm cho
vng him rng thm. Khi vng him va chn ngang knh th knh b nghn v dng
in thot ID t n tr s bo ho IDSS.
Khi VGS cng m, s nghn xy ra cng sm v dng in bo ho ID cng nh.
Khi VGS dng (iu hnh theo kiu tng), in tch dng ca cc cng ht cc
in t v mt tip xc cng nhiu, vng him hp li tc thng l rng ra, in tr thng
l gim nh. iu ny lm cho dng thot ID ln hn trong trng hp VGS = 0V.
V cc cng cch in hn khi cc ngun nn tng tr vo ca DE-MOSFET ln
hn JFET nhiu. Cng v th, khi iu hnh theo kiu tng, ngun VGS c th ln hn
0,2V. Th nhng ta phi c gii hn ca dng ID gi l IDMAX. c tuyn truyn v c
tuyn ng ra nh sau:
Trang 106
Bin son: Trng Vn Tm

DE-MOSFET knh N
ID (mA)
c tuyn
truyn
iu hnh
kiu tng
ID (mA)
c tuyn
ng ra
IDmax
VGS = +2V
VGS = +1V
IDSS
VGS = 0V
iu hnh
kiu him
VGS = -1V
VGS = -2V
VGS(off) < 0
VGS = -3V
VGS
0 2V
VDS (volt)
0
Hnh 27
DE-MOSFET knh P
ID (mA)
c tuyn
truyn
iu hnh
kiu tng
ID (mA)
c tuyn
ng ra
IDmax
VGS = -2V
VGS = -1V
IDSS
VGS = 0V
iu hnh
kiu him
VGS = +1V
VGS = +2V
VGS(off) > 0
VGS
0 -2V
VGS = +3V
VDS (volt)
0
Hnh 28
Nh vy, khi hot ng, DE-MOSFET ging ht JFET ch c tng tr vo ln hn

v dng r IGSS nh hn nhiu so vi JFET.
VI. MOSFET LOI TNG (ENHANCEMENT MOSFET:

E-MOSFET)
MOSFET loi tng cng c hai loi: E-MOSFET knh N v E-MOSFET knh P.
V mt cu to cng ging nh DE-MOSFET, ch khc l bng thng khng c
thng l ni lin gia hai vng thot D v vng ngun S.
M hnh cu to v k hiu c din t bng hnh v sau y:
Trang 107
Bin son: Trng Vn Tm

D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
n+
K hiu
n+
Thn p-
Thn ni vi
ngun
E-MOSFET knh N
S
Thn U
Hnh 29
D
Ngun
S
Cng
G
Thot
D
Tip xc
kim loi
Thn U
SiO2
p+
K hiu
p+
Thn n-
Thn ni vi
ngun
E-MOSFET knh P
S
Thn U
Hnh 30
Trang 108
Bin son: Trng Vn Tm
Khi VGS < 0V, ( E-MOSFET knh N), do khng c thng l ni lin gia hai vng
thot ngun nn mc d c ngun in th VDD p vo hai cc thot v ngun, in t
cng khng th di chuyn nn khng c dng thot ID (ID # 0V). Lc ny, ch c mt
dng in r rt nh chy qua.
- VDD +
S
SiO2
VGS = 0V
n+
n+
Thn pMch tng ng

Hnh 31
Khi VGS>0, mt in trng c to ra vng cng. Do cng mang in tch

dng nn ht cc in t trong nn p- (l ht ti in thiu s) n tp trung mt i
din ca vng cng. Khi VGS ln, lc ht mnh, cc in t n tp trung nhiu v to
thnh mt thng l tm thi ni lin hai vng ngun S v thot D. in th VGS m t
dng in thot ID bt u tng c gi l in th thm cng - ngun (gate-to-source
threshold voltage) VGS(th). Khi VGS tng ln hn VGS(th), dng in thot ID tip tc tng
nhanh.
I D = K VGS VGS( th )
Trong :
ID l dng in thot ca E-MOSFET

A
K l hng s vi n v 2
V
VGS l in th phn cc cng ngun.
VGS(th) l in th thm cng ngun.
Hng s K thng c tm mt cch gin tip t cc thng s do nh sn xut cung

cp.
Th d: Mt E-MOSFET knh N c VGS(th) =3,8V v dng in thot ID = 10mA khi
VGS = 8V. Tm dng in thot ID khi VGS = 6V.
Gii: trc tin ta tm hng s K t cc thng s:
Trang 109
Bin son: Trng Vn Tm
K=
ID
[V
GS
VGS( th )
10.10 3
] [8 3,8]
2
Vy dng thot ID v VGS l:
= 5,67.10 4
A
V2
= 5,67.10 4 [6 3,8]
ID = 2,74 mA
- VDD +
- VGG +
S
SiO2
VGS VGS(th) G
Thng l tm thi
n+
n+
Thn p-
ID (mA)
ID (mA)
c tuyn
ng ra
IDmax
c tuyn
truyn
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
VGS = 3V
VGS = 2V
VGS
0
VGS(th) VGSmax
VDS (volt)
0
Hnh 32
Trang 110
Bin son: Trng Vn Tm
VII. XC NH IM IU HNH:
Ta xem m hnh ca mt mch khuch i tn hiu nh dng JFET knh N mc theo
kiu cc ngun chung
+VDD = 20V
RD = 820
C2
C1
v0(t)
+
vGS(t) -
RG
100K
-VGG = -1V
Hnh 33
Mch tng ng mt chiu (tc mch phn cc) nh sau:

ID
RD = 820
IGSS
+
VGS
RG
+
VDS
- -
100K
VDD = 20V
VGG = -1V
Hnh 34
Cng ging nh transistor thng (BJT), xc nh im iu hnh Q, ngi ta

dng 3 bc:
p dng nh lut Krichoff mch ng vo tm VGS.
Trang 111
Bin son: Trng Vn Tm

2
V
Dng c tuyn truyn hay cng thc: I D = I DSS 1 GS trong trng hp DE VGS( off )
2
MOSFET hoc cng thc I D = K VGS VGS( th ) trong trng hp E-MOSFET xc nh
dng in thot ID.

p dng nh lut Krichoff mch ng ra tm hiu in th VDS.
By gi, ta th ng dng vo mch in hnh trn:
Mch ng vo, ta c:
VGG R G I GSS + VGS = 0
Suy ra, VGS = VGG + R G I GSS
V dng in IGSS rt nh nn ta c th b qua.
Nh vy,
VGS VGG
Trong trng hp trn, VGS = -1
y l phng trnh biu din ng phn cc (bias line) v giao im ca ng

thng ny vi c tuyn truyn l im iu hnh Q.
Nh c tuyn truyn, ta c th xc nh c dng thot ID.
ID
ID
I D ( sat ) =
IDSS
ng phn cc
VGS = -VGG = -1V
Q
VDD
RD
ng thng ly in
IDSS
VGS = 0V
Q
ID
ID
VGS = -1V
VGS = -2V
VGS = -3V
VGS = -4V
VGS
VGS(off)
-1
VDS
VDS
VDS(off) =VDD
Hnh 35
- xc nh in th VDS, ta p dng nh lut Kirchoff cho mch ng ra:

VDD = RDID + VDS
VDS = VDD RDID
y l phng trnh ca ng thng ly in tnh. Giao im ca ng thng ny

vi c tuyn ng ra vi VGS = -VGG = -1V chnh l im tnh iu hnh Q.
Trang 112
Bin son: Trng Vn Tm
VIII. FET VI TN HIU XOAY CHIU V MCH

TNG NG VI TN HIU NH
Gi s ta p mt tn hiu xoay chiu hnh sin vs(t) c bin in th nh l 10mV
vo ng vo ca mt mch khuch i cc ngun chung dng JFET knh N
+VDD = 20V
RD = 820
vS(t)
C1
+10mV
vS(t)
t
RG
C2
+
vDS(t)
+
vGS(t) -
v0(t)
100K
-10mV
-VGG = -1V
Hnh 36
C1 v C2 l 2 t lin lc, c chn sao cho c dung khng rt nh tn s ca tn

hiu v c th c xem nh ni tt tn s tn hiu.
Ngun tn hiu vs(t) s chng ln in th phn cc VGS nn in th cng ngun
vGS(t) thi im t l:
vGS(t) = VGS + Vgs(t)
= -1V + 0,01sin t (V)
t
-0,99V
-1V
-1,01V
vGS(t)
Hnh 37
Ngun tn hiu c in th nh nh nn in th cng ngun vn lun lun m.

Nh c tuyn truyn, chng ta thy rng im iu hnh s di chuyn khi VGS thay I
Trang 113
Bin son: Trng Vn Tm
theo tn hiu. thi im khi VGS t m hn, dng thot iD(t) tng v khi VGS m nhiu
hn, dng thot iD(t) gim. Vy dng in thot iD(t) thay i cng chiu vi vGS(t) v c
tr s quanh dng phn cc ID tnh (c gi s l 12,25mA). gia tng ca iD(t) v
gim ca iD(t) bng nhau vi tn hiu nh (gi s l 0,035mA). (Xem hnh trang sau).
S thay i dng in thot iD(t) s lm thay i hiu s in th gia cc thot v
cc ngun.
Ta c vDS(t) = VDD iD(t).RD. Khi iD(t) c tr s ti a, th vDS(t) c tr s ti thiu v
ngc li. iu ny c ngha l s thay i ca vDS(t) ngc chiu vi s thay i ca
dng iD(t) tc ngc chiu vi s thay i ca hiu th ng vo vGS(t), ngi ta bo in
th ng ra ngc pha - lch pha 180o so vi in th tn hiu ng vo.
Ngi ta nh ngha li ca mch khuch i l t s nh i nh ca hiu th
tn hiu ng ra v tr s nh i nh ca hiu th tn hiu ng vo:
AV =
vo (t)
vS ( t )
Trong trng hp ca th d trn:

o
v o ( t ) 0,0574VP P 180
=
AV =
v S (t)
0,02VP P
AV=2,87 -180o
Ngi ta dng du - biu din lch pha 180o
Trang 114
Bin son: Trng Vn Tm

ID(mA)
vS(t)
0,01V
0
-0,01V
12,285mA
t
0
Q
12,215mA
-1
-1,01V
-1V
VGS
-0,99V
VGS(off)
vGS(t)
iD(t) (mA)
-1,01V
12,285
12,250
12,215
-0.99V
VDD = +20V
t
0
RD = 820
iD(t)
vDS(t) (V)
vDS(t) C2
v0(t) = vds(t)
9,9837
9,9550
9,9263
t
0
v0(t)
0,0287V
0
Hnh 38
-0,0287V
Trang 115
Bin son: Trng Vn Tm
* Mch tng ng ca FET vi tn hiu nh:

Ngi ta c th coi FET nh mt t cc c dng in v in th ng vo l vgs v
ig. Dng in v in th ng ra l vds v id
id
ig
vds
vgs
Hnh 39
Do dng ig rt nh nn FET c tng tr ng vo l:

v gs
r =
rt ln
ig
Dng thot id l mt hm s theo vgs v vds. Vi tn hiu nh (dng in v in th

ch bin thin quanh im iu hnh), ta s c:
iD =
iD v gs iD vDS
+
vGS Q
vDS Q
Ngi ta t:
gm =
Ta c:
i D
v GS
i d = g m v gs +
v
Q
1
v ds
ro
i
1
= D
ro v DS
(co the at
1
= go )
ro
vgs = r.ig
Cc phng trnh ny c din t bng gin sau y gi l mch tng ng

id
xoay chiu ca FET. G
D
vgs
gmvgs
r0
vds
S
Hnh 40
Ring i vi E-MOSFET, do tng tr vo r rt ln, nn trong mch tng ng

ngi ta c th b r
Trang 116
Bin son: Trng Vn Tm
id
vgs
gmvgs
r0
vds
S
Hnh 41
IX. IN DN TRUYN (TRANSCONDUCTANCE) CA

JFET V DEMOSFET.
Cng tng t nh BJT, mt cch tng qut ngi ta nh ngha in dn truyn
ca FET l t s: g m =
i d (t)
v gs ( t )
in dn truyn c th c suy ra t c tuyn truyn, chnh l dc ca tip

tuyn vi c tuyn truyn ti im iu hnh Q
ID(mA)
dc ti im ID = IDSS l gmo
IDSS
dc ti im Q l:
i
dI
I D
gm = D =
= d(t )
dVGS VGS v gs ( t )
VGS
I D = I DSS 1
VGS( off )
VGS (volt)
VGS(off)
ID
VGS
Hnh 42
V mt ton hc, t phng trnh truyn:
VGS
I D = I DSS 1
VGS( off )
Trang 117
Bin son: Trng Vn Tm
VGS
dI D
= I DSS 1
Ta suy ra: g m =
dVGS
VGS( off )
2I DSS
VGS
= 1
VGS( off ) VGS( off )

Tr s ca gm khi VGS = 0volt (tc khi ID=IDSS) c gi l gmo.
2I
g mo = DSS
Vy:
VGS( off )
gm =
VGS
T ta thy: g m = g mo 1
VGS( off )
Trong : gm: l in dn truyn ca JFET hay DE-MOSFET vi tn hiu nh
gmo: l gm khi VGS= 0V
VGS: in th phn cc cng - ngun
VGS(off): in th phn cc cng - ngun lm JFET hay DE-MOSFET ngng.
2
VGS
Ngoi ra t cng thc: I D = I DSS 1
Ta suy ra:
VGS( off )
Vy:
VGS
ID
= 1
I DSS VGS( off )
ID
I DSS
g m = g mo
Phng trnh trn cho ta thy s lin h gia in dn truyn gm vi dng in thot
ID ti im iu hnh Q. gmo c xc nh t cc thng s IDSS v VGS(off) do nh sn
xut cung cp.
X. IN DN TRUYN CA E-MOSFET.
Do cng thc tnh dng in thot ID theo VGS ca E-MOSFET khc vi JFET v
DE-MOSFET nn in dn truyn ca n cng khc.
T cng thc truyn ca E-MOSFET
Ta c: g m =
[[
dI D
d
=
K VGS VGS( th )
dVGS dVGS
g m = 2K VGS VGS( th )
Ngoi ra: VGS =
]]
2
ID
+ VGS( th )
K
Thay vo trn ta c: g m = 2 KI D
Trong :
gm: l in dn truyn ca E-MOSFET cho tn hiu nh
K: l hng s vi n v Amp/volt2
ID: Dng din phn cc cc thot D
Trang 118
Bin son: Trng Vn Tm
Ta thy gm ty thuc vo dng in thot ID, nu gi gm1 l in dn truyn ca EMOSFET ng vi dng thot ID1 v gm2 l in dn truyn ca E-MOSFET ng vi dng
thot ID2
Ta c:
g m1 = 2 KI D1 v g m 2 = 2 KI D 2
nn: g m 2 = g m1
ID(mA)
IDmax
ID1
0
I D2
I D1
dc ti Q l gm1
VGS(th)
VGS (volt)
Hnh 43
XI. TNG TR VO V TNG TR RA CA FET.

- Ging nh BJT, ngi ta cng dng hiu ng Early nh ngha tng tr ra ca
FET ( vng bo ha, khi VDS tng, dng in ID cng hi tng v chm c tuyn ra
cng hi t ti mt im gi l in th Early).
Nu gi VA l in th Early ta c:
V
ro = A ro : Tong tr ra cua FET
ID
ro nh vy thAy i theo dng thot ID v c tr s khong vi M n hn
10M
ID(mA)
VGS
VDS(volt)
Early voltage
Hnh 44
- Do JFET thng c dng theo kiu him (phn cc nghch ni cng - ngun)
nn tng tr vo ln (hng trm M). Ring E-MOSFET v DE-MOSFET do cc cng
cch in hn khi cc ngun nn tng tr vo rt ln (hng trm M). Kt qu l ngi
ta c th xem gn ng tng tr vo ca FET l v hn.
Vi FET : r
Trang 119
Bin son: Trng Vn Tm
Trong cc mch s dng vi tn hiu nh ngi ta c th dng mch tng ng

cho FET nh hnh (a) hoc hnh (b). Nu ti khng ln lm, trong mch tng ng
ngi ta c th b c ro
id
vgs
gmvgs
r0
id
vds
gmvgs
vgs
r0
vds
Hnh 45 (a)
Hnh 45 (b)
id
gmvgs
vgs
Hnh 45
vds
S
Hnh 45 (c)
XII. CMOS TUYN TNH (LINEAR CMOS).

Nu ta c mt E-MOSFET knh P v mt E-MOSFET knh N mc nh hnh sau
y ta c mt linh kin t hp v c gi l CMOS (Complementary MOSFET).
Q1
G1
D1
Q2
vi(t)
S1
Q1 E-MOSFET
knh P
Q2 E-MOSFET
knh N
D2
v0(t)
G2
S2
Hnh 46
Tht ra n c cu trc nh sau:
Trang 120
Bin son: Trng Vn Tm
S2
S1
SiO2
G2
n+
D2
D1
n+
p+
G1
p+
p-
Thn n-
Hnh 47
Cu trc CMOS c dng rt nhiu trong IC tuyn tnh v IC s
+ By gi ta xt mch cn bn nh trn, ta th xem p ng ca CMOS khi tn hiu

vo c dng xung vung nh hnh v. Mch ny c ng dng lm cng o v l tng
cui ca OP-AMP (IC thut ton).
- Khi vi = 5V (0 t t1); E-MOSFET knh P ngng v vGS(t)=0V, trong lc EMOSFET knh N dn mnh v vGS(t)=5V nn in th ng ra vo(t)=0V.
- Khi vi(t)=0V (t t1), E-MOSFET knh P dn in mnh (v vGS(t) = -5V) trong lc
E-MOSFET knh N khng dn in (v vGS(t) = 0V) nn in th ng ra vo(t)=VDD=5V.
VDD = 15V
Q1
vi(t)
G1
5V
t1
vo(t)
5V
D1
Q2
vi(t)
S1
D2
G2
v0(t)
0
t1
S2
Hnh 48
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Nh vy, tc dng ca CMOS l mt mch o (inverter)

Ta xem mt mch khuch i n gin dng CMOS tuyn tnh:
VDD = +15V
Q1 P
D1
Q2 N
D2
v0(t)
G2
vo(t)
t
S2
VGG =
G1
vi(t)
vi(t)
S1
VDD
= 7,5V
2
Hnh 49
VGG =
VDD
= 7,5V
2
- Khi vi(t) dng, E-MOSFET knh N dn in mnh hn v E-MOSFET knh P

bt u dn in yu hn. Do vo(t) gim.
- Khi vi(t) dng, E-MOSFET knh P dn in mnh hn v E-MOSFET knh N
bt u dn in yu hn, nn vo(t) tng.
Nh vy ta thy tn hiu ng vo v ng ra ngc pha nhau (lnh pha 180o)
XIII. MOSFET CNG SUT: V-MOS V D-MOS.

Cc transistor trng ng (JFET v MOSFET) m ta kho st trn ch thch
hp cho cc mch c bin tn hiu nh nh tin khuch i, trn sng, khuch i cao
tn, trung tn, dao ng nm 1976, ngi ta pht minh ra loi transistor trng c cng
sut va, n ln vi kh nng dng thot n vi chc ampere v cng sut c th ln
n vi chc Watt.
1. V-MOS:
Tht ra y l mt loi E-MOSFET ci tin, cng l khng c sn thng l v iu
hnh theo kiu tng. s khc nhau v cu trc E-MOSFET v V-MOS c trnh by
bng hnh v sau:
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Ngun
S
Cng
G
Thot
D
Ngun
S
SiO2
n+
n+
Thng l s
hnh thnh
Cng
G
Ngun
S
SiO2
n+
n+
p
n-
p- thn
n+
Thot
D
Thng l s
hnh thnh
E-MOSFET knh N
V-MOS knh N
Hnh 50
Khi VGS dng v ln hn VGS(th), thng l c hnh thnh dc theo rnh V v

dng electron s chy thng t hai ngun S n cc thot D. V l do ny nn c gi l
V-MOS (Vertical MOSFET).
2. D-MOS:
Cng l mt loi E-MOSFET hot ng theo kiu tng, ng dng hin tng
khuch tn i (double-diffused) nn c gi l D-MOS. C cu trc nh sau:
Ngun
S
Cng
G
Ngun
S
n+
n+
p+
p+
nThn n+
DMOS knh N
Thng
l s
hnh
thnh
Thot D
Hnh 51
Cc c tnh hot ng ca V-MOS v D-MOS cng ging nh E-MOSFET. Ngoi

ra, cc c im ring ca V-MOS v D-MOS l:
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- in tr ng rds khi hot ng rt nh (thng nh hn 1)

- C th khuch i cng sut tn s rt cao
- Di thng ca mch khuch i cng sut c th ln n vi chc MHz
- V-MOS v D-MOS cng c knh N v knh P, nhng knh N thng dng hn
- V-MOS v D-MOS cng c k hiu nh E-MOSFET
H FET c th tm tt nh sau
FET
JFET
MOSFET
JFET
knh N
JFET
Knh P
DE-MOSFET
Kiu him + tng
DE-MOSFET
Knh N
DE-MOSFET
Knh P
E-MOSFET
Knh N
V-MOS
Knh N
E-MOSFET
Kiu tng
E-MOSFET
Knh P
V-MOS
Knh P
CMOS
D-MOS
Knh N
D-MOS
Knh P
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Bi tp cui chng
1. Tnh VD, v in dn truyn gm trong mch:
+12V
RD
5K
VD
IDSS = 4mA
VGS(off) = -4V
RG
1M
1K RE
2. Trong mch in sau, tnh in th phn cc VD v in dn truyn gm.

+12V
RD
5K
VD IDSS = 4mA
VGS(off) = -4V
RG
2V
1M
3. Trong mch in sau, tnh in th phn cc VD, VG. Cho bit E-MOSFET c h s
mA
k = 1 2 v VGS(th) = 3V.
V
24V
24V
10M
RD
5K
VG
VD
2M
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CHNG VII
LINH KIN C BN LP BN DN PNPN V
NHNG LINH KIN KHC
I. SCR (THYRISTOR SILICON CONTROLLED
RECTIFIER).
1. Cu to v c tnh:
SCR c cu to bi 4 lp bn dn PNPN (c 3 ni PN). Nh tn gi ta thy SCR
l mt diode chnh lu c kim sot bi cng silicium. Cc tp xc kim loi c to
ra cc cc Anod A, Catot K v cng G.
Anod
A
Anod
A
P
N
P
G
Cng
(Gate)
G
Cng
(Gate)
P
N
K
Catod
K
Catod
Cu to
M hnh tng ng
A
A
T1
IC1
IC2
IB2
T2
IG
K
K
M hnh tng ng
K hiu
Hnh 1
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Nu ta mc mt ngun in mt chiu VAA vo SCR nh hnh sau. mt dng in

nh IG kch vo cc cng G s lm ni PN gia cc cng G v catot K dn pht khi
dng in anod IA qua SCR ln hn nhiu. Nu ta i chiu ngun VAA (cc dng ni
vi catod, cc m ni vi anod) s khng c dng in qua SCR cho d c dng in
kch IG. Nh vy ta c th hiu SCR nh mt diode nhng c thm cc cng G v
SCR dn in phi c dng in kch IG vo cc cng.
IA
IG
RG
G
Cng
(Gate)
P
N
VAK
P
N
RA
K
VGG
VAA
Hnh 2
Ta thy SCR c th coi nh tng ng vi hai transistor PNP v NPN lin kt

nhau qua ng nn v thu
Khi c mt dng in nh IG kch vo cc nn ca Transistor NPN T1 tc cng G
ca SCR. Dng in IG s to ra dng cc thu IC1 ln hn, m IC1 li chnh l dng nn
IB2 ca transistor PNP T2 nn to ra dng thu IC2 li ln hn trc Hin tng ny c
tip tc nn c hai transistor nhanh chng tr nn bo ha. Dng bo ha qua hai
transistor chnh l dng anod ca SCR. Dng in ny ty thuc vo VAA v in tr ti
RA.
C ch hot ng nh trn ca SCR cho thy dng IG khng cn ln v ch cn tn
ti trong thi gian ngn. Khi SCR dn in, nu ta ngt b IG th SCR vn tip tc dn
in, ngha l ta khng th ngt SCR bng cc cng, y cng l mt nhc im ca
SCR so vi transistor.
Ngi ta ch c th ngt SCR bng cch ct ngun VAA hoc gim VAA sao cho
dng in qua SCR nh hn mt tr s no (ty thuc vo tng SCR) gi l dng in
duy tr IH (hodding current).
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2. c tuyn Volt-Ampere ca SCR:

c tuyn ny trnh by s bin thin ca dng in anod IA theo in th anodcatod VAK vi dng cng IG coi nh thng s.
- Khi SCR c phn cc nghch (in th anod m hn in th catod), ch c mt
dng in r rt nh chy qua SCR.
- Khi SCR c phn cc thun (in th anod dng hn in th catod), nu ta
ni tt (hoc h) ngun VGG (IG=0), khi VAK cn nh, ch c mt dng in rt nh
chy qua SCR (trong thc t ngi ta xem nh SCR khng dn in), nhng khi VAK t
n mt tr s no (ty thuc vo tng SCR) gi l in th quay v VBO th in th
VAK t ng st xung khong 0,7V nh diode thng. Dng in tng ng by gi
chnh l dng in duy tr IH. T by gi, SCR chuyn sang trng thi dn in v c c
tuyn gn ging nh diode thng.
Nu ta tng ngun VGG to dng kch IG, ta thy in th quay v nh hn v khi

dng kch IG cng ln, in th quay v VBO cng nh.
IA
Diode
thng
SCR
IG2 > IG1 > 0

IG = 0
IH
VBR
VAK
0
0,7V
VBO
Hnh 3
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3. Cc thng s ca SCR:
Sau y l cc thng s k thut chnh ca SCR
- Dng thun ti a:
L dng in anod IA trung bnh ln nht m SCR c th chu ng c lin tc.
Trong trng hp dng ln, SCR phi c gii nhit y . Dng thun ti a ty
thuc vo mi SCR, c th t vi trm mA n hng trm Ampere.
- in th ngc ti a:
y l in th phn cc nghch ti a m cha xy ra s hy thc (breakdown).
y l tr s VBR hnh trn. SCR c ch to vi in th nghch t vi chc volt n
hng ngn volt.
- Dng cht (latching current):
L dng thun ti thiu gi SCR trng thi dn in sau khi SCR t trng thi
ngng sang trng thi dn. Dng cht thng ln hn dng duy tr cht t SCR cng
sut nh v ln hn dng duy tr kh nhiu SCR c cng sut ln.
- Dng cng ti thiu (Minimun gate current):
Nh thy, khi in th VAK ln hn VBO th SCR s chuyn sang trng thi dn
in m khng cn dng kch IG. Tuy nhin trong ng dng, thng ngi ta phi to ra
mt dng cng SCR dn in ngay. Ty theo mi SCR, dng cng ti thiu t di
1mA n vi chc mA. Ni chung, SCR c cng sut cng ln th cn dng kch ln. Tuy
nhin, nn ch l dng cng khng c qu ln, c th lm hng ni cng-catod ca
SCR.
- Thi gian m (turn on time):
L thi gian t lc bt u c xung kch n lc SCR dn gn bo ha (thng l
0,9 ln dng nh mc). Thi gian m khong vi S. Nh vy, thi gian hin din ca
xung kch phi lu hn thi gian m.
- Thi gian tt (turn off time):
tt SCR, ngi ta gim in th VAK xung 0Volt, tc dng anod cng bng 0.
Th nhng nu ta h in th anod xung 0 ri tng ln ngay th SCR vn dn in mc
d khng c dng kch. Thi gian tt SCR l thi gian t lc in th VAK xung 0 n
lc ln cao tr li m SCR khng dn in tr li. Thi gian ny ln hn thi gian m,
thng khong vi chc S. Nh vy, SCR l linh kin chm, hot ng tn s thp, ti
a khong vi chc KHz.
- Tc tng in th dv/dt:
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Ta c th lm SCR dn in bng cch tng in th anod ln n in th quay v

VBO hoc bng cch dng dng kch cc cng. Mt cch khc l tng in th anod
nhanh tc dv/dt ln m bn thn in th V anod khng cn ln. Thng s dv/dt l tc
tng th ln nht m SCR cha dn, vt trn v tr ny SCR s dn in. L do l c mt
in dung ni Cb gia hai cc nn ca transistor trong m hnh tng ng ca SCR.
dng in qua t l: i cb = C b
dV
. Dng in ny chy vo cc nn ca T1. Khi dV/dt
dt
ln th icb ln sc kch SCR. Ngi ta thng trnh hin tng ny bng cch mc
mt t C v in tr R song song vi SCR chia bt dng icb.
A
C
R
K
Hnh 4
- Tc tng dng thun ti a di/dt:

y l tr s ti a ca tc tng dng anod. Trn tr s ny SCR c th b h. L
do l khi SCR chuyn t trng thi ngng sang trng thi dn, hiu th gia anod v
catod cn ln trong lc dng in anod tng nhanh khin cng sut tiu tn tc thi c
th qu ln. Khi SCR bt u dn, cng sut tiu tn tp trung gn vng cng nn vng
ny d b h hng. Kh nng chu ng ca di/dt ty thuc vo mi SCR.
4. SCR hot ng in th xoay chiu

Khi SCR hot ng in th xoay chiu tn s thp (th d 50Hz hoc 60Hz) th
vn tt SCR c gii quyt d dng. Khi khng c xung kch th mng in xung
gn 0V, SCR s ngng. D nhin bn k m SCR khng hot ng mc d c xung
kch.
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SCR ngng
SCR dn
V Ti
Ti L
V
Gc dn
220V/50Hz
IG
Hnh 5
IG
tng cng sut cho ti, ngi ta cho SCR hot ng ngun chnh lu ton k.
V Ti
Ti L
Gc dn
220V/50Hz
IG
Hnh 6
IG
V in 50Hz c chu k T=1/50=20nS nn thi gian in th xp x 0V lm

ngng SCR.
5. Vi ng dng n gin:
Mch n khn cp khi mt in:
D1
D2
T1
220V/
50Hz
R1
c chn ty theo dng np accu
SCR
6,3V
6,3V
D3
100uF
R3 1K
R2 150
+
-
ACCU 6V
DEN
Hnh 7
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Bnh thng n 6V chy sng nh ngun in qua mch chnh lu. Lc ny SCR ngng
dn do b phn cc nghch, accu c np qua D1, R1. Khi mt in, ngun in accu s lm
thng SCR v thp sng n.
Mch np accu t ng (trang sau)
D1
6,3V
SCR1
R2 47 2W
SCR2
D3
6,3V
RR3
4 47
1K2W
+
-
VR
750
2W
VZ = 11V
R3 1K
6V
ACCU 12V
D2
50uF
~220V
~ 110V
R1 47 2W
Hnh 8
- Khi accu np cha y, SCR1 dn, SCR2 ngng
- Khi accu np y, in th cc dng ln cao, kch SCR2 lm SCR2 dn, chia bt
dng np bo v accu.
- VR dng chnh mc bo v (gim nh dng np)
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II. TRIAC (TRIOD AC SEMICONDUCTOR SWITCH).

T2
T2
T2
p
n
G
Cng
(Gate)
T1
u
T1
u
T2
T2
IG
T2
IG
G
T1
T2
T1
u
p
n
T1
T1
Hnh 9
+
T1
Thng c coi nh mt SCR lng hng v c th dn in theo hai chiu. Hnh

sau y cho thy cu to, m hnh tng ng v cu to ca Triac.
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Nh vy, ta thy Triac nh gm bi mt SCR PNPN dn in theo chiu t trn

xung di, kch bi dng cng dng v mt SCR NPNP dn in theo chiu t di
ln kch bi dng cng m. Hai cc cn li gi l hai u cui chnh (main terminal).
- Do u T2 dng hn u T1, Triac dn in ta c th kch dng cng dng v
khi u T2 m hn T1ta c th kch dng cng m.
IA
T2
IH
V21
-VBO
V21
0
G
IG
0,7V
+VBO
T1
Hnh 10
- Nh vy c tuyn V-I ca Triac c dng sau:

- Tht ra, do s tng tc ca vng bn dn, Triac c ny theo 4 cch khc nhau,
c trnh by bng hnh v sau y:
+
T2
T2
Cch 1
T2
IG < 0 T1
T2
IG > 0 T1
IG < 0 T1
Cch 2
Cch 3
IG > 0 T1
Cch 4
Hnh 11
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Cch (1) v cch (3) nhy nht, k n l cch (2) v cch (4). Do tnh cht dn in
c hai chiu, Triac dng trong mng in xoay chiu thun li hn SCR. Th d sau y
cho thy ng dng ca Triac trong mng in xoay chiu.
220V/50Hz
+ VL Ti
Triac dn
VL
. +
D1
- .
D2
VR
Gc dn
Hnh 12
III. SCS (SILICON CONTROLLED SWITCH).

SCS cn c gi l Tetrode thyristor (thyristor c 4 cc). V mt cu to, SCS
ging nh SCR nhng c thm mt cng gi l cng anod nn cng kia ( SCR) c
gi l cng catod.
Anod
A
GK
Cng
Catod
P
N
K
Catod
Cu to
GA
P
N
GA
GA
Cng
Anod
GA
GK
GK
K
GK
K hiu
M hnh tng ng
Hnh 13
Nh vy, khi ta p mt xung dng vo cng catod thi SCS dn in. Khi SCS ang
hot ng, nu ta p mt xung dng vo cng anod th SCS s ngng dn. Nh vy, i
vi SCS, cng catod dng m SCS, v cng anod dng tt SCS. Tuy c kh nng
nh SCR, nhng thng ngi ta ch ch to SCS cng sut nh (phn ln di vi trm
miniwatt) v do cng catod rt nhy (ch cn kch cng catod khong vi chc A) nn
SCS c ng dng lm mt switch in t nhy.
V d sau l mt mch bo ng dng SCS nh mt cm bin in th:
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+12V
Relais ng
mch bo
ng
Relay
1K
1K
LED
10K
INPUT 1
1K
LED
10K
INPUT 2
LED
10K
INPUT 3
Hnh 15
ng vo thng ngi ta mc mt ming kim loi, khi s tay vo, SCS dn in

Led tng ng chy sng, Relais hot ng ng mch bo ng hot ng.
IV. DIAC
V cu to, DIAC ging nh mt SCR khng c cc cng hay ng hn l mt
transistor khng c cc nn. Hnh sau y m t cu to, k hiu v mch tng ng
ca DIAC.
Anod 1
Anod 1
Anod 1
Anod 2
K hiu
Anod 2
Anod 2
Tng ng
Anod 1
p
n
n
Anod 2
Cu to
Hnh 16
Khi p mt hiu in th mt chiu theo mt chiu nht nh th khi n in th

VBO, DIAC dn in v khi p hiu th theo chiu ngc li th n tr s -VBO, DIAC
cng dn in, DIAC th hin mt in tr m (in th hai u DIAC gim khi dng
in qua DIAC tng). T cc tnh cht trn, DIAC tng ng vi hai Diode Zener mc
i u. Thc t, khi khng c DIAC, ngi ta c th dng hai Diode Zener c in th
Zener thch hp thay th. (Hnh 17)
Trong ng dng, DIAC thng dng m Triac. Th d nh mch iu chnh
sng ca bng n (Hnh 18)
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I
Bng n
-VBO
VR
110V/50Hz
220V/50Hz
V
+VBO
C
Hnh 18
Hnh 17
bn k dng th in th tng, t np in cho n in th VBO th DIAC dn,

to dng kch cho Triac dn in. Ht bn k dng, Triac tm ngng. n bn k m t
C np in theo chiu ngc li n in th -VBO, DIAC li dn in kch Triac dn
in. Ta thay i VR thay i thi hng np in ca t C, do thay i gc dn ca
Triac a n lm thay i sng ca bng n.
V. DIOD SHOCKLEY.
Diod shockley gm c 4 lp bn dn PNPN (diod 4 lp) nhng ch c hai cc. Cu
to c bn v k hiu cng vi c tuyn Volt-Ampere khi phn cc thun c m t
hnh v sau y:
Anod
A
+ A
IA
P
N
P
N
K
Catod
+
Vf
-
IBO
Vf
0
- K
VBO
Hnh 19
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Ta thy c tuyn ging nh SCR lc dng cng IG=0V, nhng in th quay v

VBO ca Diod shockley nh hn nhiu. Khi ta tng in th phn cc thun, khi in th
anod-catod ti tr s VBO th Diod shockley bt u dn, in th hai u gim nh v sau
hot ng nh Diod bnh thng.
p dng thng thng ca Diod shockley l dng kch SCR. Khi phn cc
nghch, Diod shockley cng khng dn in.
Ti
R
110V/50Hz
220V/50Hz
C
Hnh 20
- Bn k dng, t C np in n in th VBO th Diod shockley dn in, kch

SCR dn.
Bn k m, Diod shockley ngng, SCR cng ngng.
VI. GTO (GATE TURN OFF SWITCH).

GTO l mt linh kin c 4 lp bn dn PNPN nh SCR. cu to v k hiu c m
t nh sau:
Anod
A
Anod
A
P
N
G
Cng
G
Cng
P
N
K
Catod
K hiu
K
Catod
Hnh 21
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Tuy c k hiu khc vi SCR v SCS nhng cc tnh cht th tng t. S khc bit
c bn cng l s tin b ca GTO so vi SCR hoc SCS l c th m hoc tt GTO ch
bng mt cng (m GTO bng cch a xung dng vo cc cng v tt GTO bng cch
a xung m vo cc cng).
- So vi SCR, GTO cn dng in kch ln hn (thng hng trm mA)
- Mt tnh cht quan trng na ca GTO l tnh chuyn mch. Thi gian m ca
GTO cng ging nh SCR (khong 1s), nhng thi gian tt (thi gian chuyn t trng
thi dn in sang trng thi ngng dn) th nh hn SCR rt nhiu (khong 1s GTO
v t 5s n 30s SCR). Do GTO dng nh mt linh kinc chuyn mch nhanh.
GTO thng c dng rt ph bin trong cc mch m, mch to xung, mch iu ho
in th mch sau y l mt ng dng ca GTO to tn hiu rng ca kt hp vi
Diod Zener.
VAA=+200V
R1
VR
+Vo
VR
C1
R2
Hnh 22
Khi cp in, GTO dn, anod v catod xem nh ni tt. C1 np in n in th

ngun VAA, lc VGK<0 lm GTO ngng dn. T C1 x in qua R3=VR+R2. Thi gian
x in ty thuc vo thi hng =R3C1. Khi Vo<VZ, GTO li dn in v chu k mi li
c lp li.
Vo
VAA
VZ
0
Hnh 23
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VII. UJT (UNIJUNCTION TRANSISTOR TRANSISTOR

C NI).
Transistor thng (BJT) gi l Transistor lng cc v c hai ni PN trong lc UJT
ch c mt c nht ni P-N. Tuy khng thng dng nh BJT, nhng UJT c mt s c
tnh c bit nn mt thi gi vai tr quan trng trong cc mch to dng sng v nh
gi.
1. Cu to v c tnh ca UJT:
Hnh sau y m t cu to n gin ho v k hiu ca UJT
B2
Nn
B1
E
E
Pht
B2
nE
B2
B1
Nn
B1
Hnh 24
Mt thi bn dn pha nh loi n- vi hai lp tip xc kim loi hai u to thnh

hai cc nn B1 v B2. Ni PN c hnh thnh thng l hp cht ca dy nhm nh
ng vai tr cht bn dn loi P. Vng P ny nm cch vng B1 khong 70% so vi chiu
di ca hai cc nn B1, B2. Dy nhm ng vai tr cc pht E.
Hnh sau y trnh by cch p dng in th mt chiu vo cc cc ca UJT
kho st cc c tnh ca n.
Mch tng ng ca UJT
IE
B2
RE
B1
RE
VBB
EE
EE
B2
D1
R
B2
VBB
R
B1
B1
Hnh 25
Trang 140
Bin son: Trng Vn Tm
- Khi cha p VEE vo cc pht E (cc pht E h) thi bn dn l mt in tr

vi ngun in th VBB, c k hiu RBB v gi l in tr lin nn (thng c tr s t
4 K n 10 K). T m hnh tng ng ta thy Diod c dng din t ni P-N
gia vng P v vng n-. in tr RB1 v RB2 din t in tr ca thi bn dn n-. Nh vy:
R BB = R B1 + R B 2
I E =0
Vy in th ti im A l:
VA =
R B1
VBB = .VBB > 0
R B1 + R B 2
Trong : =
R B1
R
= B1
R B1 + R B 2 R BB
c gi l t s ni ti (intrinsic stand off)
RBB v c cho bi nh sn xut.

- By gi, ta cp ngun VEE vo cc pht v nn B1 (cc dng ni v cc pht).
Khi VEE=0V (ni cc pht E xung mass), v VA c in th dng nn Diod c phn
cc nghch v ta ch c mt dng in r nh chy ra t cc pht. tng VEE ln dn, dng
in IE bt u tng theo chiu dng (dng r ngc IE gim dn, v trit tiu, sau
dng dn). Khi VE c tr s
VE=VD+VA
VE=0,5V + VB2B1 ( y VB2B1 = VBB) th Diod phn cc thun v bt u dn
in mnh.
UJT.
in th VE=0,5V + VB2B1=VP c gi l in th nh (peak-point voltage) ca

VE
VE
nh
VP
VP
0
VV
0
IP
Vng
in tr
m
IV
Thung
lng
VV
IE
IV
IE
Hnh 26
Trang 141
Bin son: Trng Vn Tm
Khi VE=VP, ni P-N phn cc thun, l trng t vng pht khuch tn vo vng nv di chuyn n vng nn B1, lc l trng cng ht cc in t t mass ln. V dn
in ca cht bn dn l mt hm s ca mt in t di ng nn in tr RB1 gim.
Kt qu l lc dng IE tng v in th VE gim. Ta c mt vng in tr m.
in tr ng nhn t cc pht E trong vng in tr m l: rd =
VE
I E
Khi IE tng, RB1 gim trong lc RB2 t b nh hng nn in tr lin nn RBB gim.
Khi IE ln, in tr lin nn RBB ch yu l RB2. Kt thc vng in tr m l vng
thung lng, lc dng IE ln v RB1 qu nh khng gim na (ch l dng ra cc
nn B1) gm c dng in lin nn IB cng vi dng pht IE ) nn VE khng gim m bt
u tng khi IE tng. Vng ny c gi l vng bo ha.
Nh vy ta nhn thy:
- Dng nh IP l dng ti thiu ca cc pht E t UJT hot ng trong vng
in tr m. Dng in thung lng IV l dng in ti a ca IE trong vng in tr m.
- Tng t, in th nh VP l in th thung lng VV l in th ti a v ti thiu
ca VEB1 t UJT trong vng in tr m.
Trong cc ng dng ca UJT, ngi ta cho UJT hot ng trong vng in tr m,
mun vy, ta phi xc nh in tr RE IP<IE<IV
Th d trong mch sau y, ta xc nh tr s ti a v ti thiu ca RE
+VBB
VBB > VP
VEB1
VEB1
REmax
REmin
VP
B2
+
VEB1
-
B1
IE
0
VV
IE
0 IP
IV
Hnh 27
Trang 142
Bin son: Trng Vn Tm
Ta c: R E max =
V R E min =
Nh vy:
V VP VBB VP
V
= BB
=
I
0 IP
IP
V VV VBB VV
V
= BB
=
I
0 IV
IV
VBB VV
V VP
R E BB
IV
IP
2. Cc thng s k thut ca UJT v vn n nh nhit cho nh:

Sau y l cc thng s ca UJT:
- in tr lin nn RBB: l in tr gia hai cc nn khi cc pht h. RBB tng khi
nhit tng theo h s 0,8%/1oC
- T s ni ti: =
R B1
R
= B1 T s ny cng c nh ngha khi cc pht E
R B1 + R B 2 R BB
h.
- in th nh VP v dng in nh IP. VP gim khi nhit tng v in th
ngng ca ni PN gim khi nhit tng. Dng IP gim khi VBB tng.
tng.
- in th thung lng VV v dng in thung lng IV. C VV v IV u tng khi VBB
- in th cc pht bo ha VEsat: l hiu in th gia cc pht E v cc nn B1

c o IE=10mA hay hn v VBB 10V. Tr s thng thng ca VEsat l 4 volt (ln
hn nhiu so vi diod thng).
n nh nhit cho nh: in th nh VP l thng s quan trng nht ca UJT. Nh
thy, s thay i ca in th nh VP ch yu l do in th ngng ca ni PN v t
s thay i khng ng k.
Ngi ta n nh nhit cho VP bng cch thm mt in tr nh R2 (thng khong
vi trm ohm) gia nn B2 v ngun VBB. Ngoi ra ngi ta cng mc mt in tr nh
R1 cng khong vi trm ohm cc nn B1 ly tn hiu ra.
Trang 143
Bin son: Trng Vn Tm
R2
B2
E
VBB
B1
R1
Hnh 28
Khi nhit tng, in tr lin nn RBB tng nn in th lin nn VB2B1 tng. Chn
R2 sao cho s tng ca VB2B1 b tr s gim ca in th ngng ca ni PN. Tr ca R2
c chn gn ng theo cng thc: R 2
(0,4 0,8)R BB
VBB
Ngoi ra R2 cn ph thuc vo cu to ca UJT. Tr chn theo thc nghim khong

vi trm ohm.
3. ng dng n gin ca UJT:

Mch dao ng th gin (relaxation oscillator)
E 10K
R2 330
VB2
VBB
+12V
VC1 = VP
Ngi ta thng dng UJT lm thnh mt mch dao ng to xung. Dng mch v
tr s cc linh kin in hnh nh sau:
VE
C1 np
VB2
C1 x (rt nhanh)
t
VB1
t
VB1
C1 .1
R1
22
t
0
VP
VE
VV
Hnh 29
Trang 144
Bin son: Trng Vn Tm
Khi cp in, t C1 bt u np in qua in tr RE. (Diod pht-nn 1 b phn cc

nghch, dng in pht IE xp x bng khng). in th hai u t tng dn, khi n in
th nh VP, UJT bt u dn in. T C1 phng nhanh qua UJT v in tr R1. in th
hai u t (tc VE) gim nhanh n in th thung lng VV. n y UJT bt u ngng
v chu k mi lp li.
* Dng UJT to xung kch cho SCR
5,6K
20K
+
470uF
-
V=20V
z
Ti
330
100K
UJT
F1
B2
FUSE
.1
B1
SCR
110V/50Hz
220V/50Hz
47
Hnh 30
- Bn k dng nu c xung a vo cc cng th SCR dn in. Bn k m SCR

ngng.
- iu chnh gc dn ca SCR bng cch thay i tn s dao ng ca UJT.
VIII. PUT (Programmable Unijunction Transistor).

Nh tn gi, PUT ging nh mt UJT c c tnh thay i c. Tuy vy v cu
to, PUT khc hn UJT
Anod
A
Anod
A
P
N
IA
G
Cng
G
Cng
K
Catod
Cu to
R
B2
R
VAK
P
N
VAA
K
Catod
K hiu
VGK
R
B1
Phn cc
Hnh 31
Trang 145
Bin son: Trng Vn Tm
l cng G nm vng N gn anod nn PUT dn in, ngoi vic in th

anod ln hn in th catod, in th anod cn phi ln hn in th cng mt in th
ngng ca ni PN.
Ta c: VGK =
R B1
VBB = VBB
R B1 + R B 2
Trong : =
R B1
nh c nh ngha trong UJT
R B1 + R B 2
Tuy nhin, nn nh l UJT, RB1v RB2 l in tr ni ca UJT, Trong lc PUT,

RB1 v RB2 l cc in tr phn cc bn ngoi.
c tuyn ca dng IA theo in th cng VAK cng ging nh UJT
in th nh VP c tnh bi: VP = VD+VBB
VP
VAK
Vng in tr m
m VD = 0,7V (th d Si)

VG = VBB VP = VG + 0,7V
IV
IP
IA
Hnh 32
Tuy PUT v UJT c c tnh ging nhau nhng dng in nh v thung lng ca
PUT nh hn UJT
+ Mch dao ng th gin dng PUT
+VBB
R
VA
Np
R
B2
VP
C
VV
K
R
R
B1
K
t
0
Hnh 33
Trang 146
Bin son: Trng Vn Tm
Ch trong mch dng PUT, ng x ca t in l anod. Tn hiu ra c s dng

thng ly catod (v c th dng kch SCR nh UJT)
VG
VK = VBB
t
VK
VK = VP-VV
t
Hnh 34
Trang 147
Bin son: Trng Vn Tm
CHNG VIII
LINH KIN QUANG IN T
Trong chng ny, chng ta ch cp n mt s cc linh kin quang in t thng
dng nh quang in tr, quang diod, quang transistor, led cc linh kin quang in t
qu c bit khng c cp n.
I. NH SNG.
Sng v tuyn trong h thng truyn thanh, truyn hnh, nh snh pht n tia X
trong y khoa Tuy c cc cng dng khc nhau nhng li c chung mt bn cht v
c gi l sng in t hay bc x in t. im khc nhau c bn ca sng in t l
tn s hay bc sng. Gia tn s v bc sng lin h bng h thc =
c
f
Trong
c l vn tc nh sng = 3.108m/s
f l tn s tnh bng Hz
Bc sng tnh bng m. Ngoi ra ngi ta thng dng cc c s:
m = 10-6m ; nm = 10-9m v Amstron = =1010m
S khc bit v tn s dn n mt s khc bit quan trng khc l ta c th thy

c sng in t hay khng. Mt ngi ch thy c sng in t trong mt di tn s
rt hp gi l nh sng thy c hay thng gi tt l nh sng. V pha tn s thp hn
gi l bc x hng ngoi (infrared) v pha tn s cao hn gi l bc x t ngoi
(ultraviolet).
Ta ch c th thy c bc x c tn s khong 4.10-14Hz (tc bc sng 750nm)
n tn s khong 7,8.1014Hz (tc bc sng khong 380nm)
Hng ngoi
(=750nm)4.1014Hz
T ngoi
(=380nm)7,8.1014Hz
Trong vng nh sng thy c, nu ch c mt khong ngn ca di tn s ni trn

th cm gic ca mt ghi nhn c 7 mu:
Tm
L
Violet
Blue
380nm
430
Lam
Cyan
470
500
Xanh l
Green
560
Trang 148
Vng
Yellow
590
Cam
Orange
650
Red
750nm
Bin son: Trng Vn Tm
Ch l gii hn trn ch c tnh cch tng i. S khc nhau v tn s li dn n

mt s khc bit quan trng na l nng lng bc x. Nng lng bc x t l vi tn
s theo cng thc: E=h.f vi h: hng s planck = 6,624.10-34J.sec
Nh ta thy, bin trung bnh ca ph c gi l cng sng v c o bng
n v footcandles. Th d ngun sng l mt bng n trn, th mt im cng xa
ngun, cng sng cng yu nhng s lng nh sng ta ra trong mt gc khi (hnh
nn) l khng i v c gi l quang thng. n v ca quang thng l Lumens (Lm)
hay Watt.
1 Lm = 1,496.10-10 watt
n v ca cng nh sng l foot-candles (fc), Lm/ft2 hay W/m2. Trong :
1 Lm/ft2 = 1 fc = 1,609.10-12 W/m2
II. QUANG IN TR (PHOTORESISTANCE).

L in tr c tr s cng gim khi c chiu sng cng mnh. in tr ti (khi
khng c chiu sng - trong bng ti) thng trn 1M, tr s ny gim rt nh c
th di 100 khi c chiu sng mnh
K hiu
Hnh dng
Hnh 1
Nguyn l lm vic ca quang in tr l khi nh sng chiu vo cht bn dn (c

th l Cadmium sulfide CdS, Cadmium selenide CdSe) lm pht sinh cc in t t
do, tc s dn in tng ln v lm gim in tr ca cht bn dn. Cc c tnh in v
nhy ca quang in tr d nhin ty thuc vo vt liu dng trong ch to.
in tr
105
10000
1000
0
0,1
10
100 1000
fc
Hnh 2
V phng din nng lng, ta ni nh sng cung cp mt nng lng E=h.f

cc in t nhy t di ha tr ln di dn in. Nh vy nng lng cn thit h.f phi ln
hn nng lng ca di cm.
Trang 149
Bin son: Trng Vn Tm
Vi ng dng ca quang in tr:

Quang in tr c dng rt ph bin trong cc mch iu khin
1. Mch bo ng:
B+
Bng n hoc chung ti
R1
SCR
Ngun sng hng ngoi
Hnh 3
Khi quang in tr c chiu sng (trng thi thng trc) c in tr nh, in

th cng ca SCR gim nh khng dng kch nn SCR ngng. Khi ngun sng b
chn, R tng nhanh, in th cng SCR tng lm SCR dn in, dng in qua ti lm
cho mch bo ng hot ng.
Ngi ta cng c th dng mch nh trn, vi ti l mt bng n c th chy
sng v m v tt vo ban ngy. Hoc c th ti l mt relais iu khin mt mch
bo ng c cng sut ln hn.
2. Mch m in t ng v m dng in AC:
Bng n
DIAC
15K
A
TRIAC
220V/50Hz
110V/50Hz
1K
.1
Hnh 4
Trang 150
Bin son: Trng Vn Tm
Ban ngy, tr s ca quang in tr nh. in th im A khng m Diac

nn Triac khng hot ng, n tt. v m, quang tr tng tr s, lm tng in th
im A, thng Diac v kch Triac dn in, bng n sng ln.
III. QUANG DIOD (PHOTODIODE).

Ta bit rng khi mt ni P-N c phn cc thun th vng him hp v dng thun
ln v do ht ti in a s (in t cht bn dn loi N v l trng cht bn dn loi
P) di chuyn to nn. Khi phn cc nghch, vng him rng v ch c dng in r nh
(dng bo ha nghch I0) chy qua.
I
R
V
K hiu
Phn cc
Hnh 5
By gi ta xem mt ni P-N c phn cc nghch. Th nghim cho thy khi chiu

sng nh sng vo mi ni (gi s diod c ch to trong sut), ta thy dng in
nghch tng ln gn nh t l vi quang thng trong lc dng in thun khng tng. Hin
tng ny c dng ch to quang diod.
Khi nh sng chiu vo ni P-N c nng lng lm pht sinh cc cp in t - l
trng st hai bn mi ni lm mt ht ti in thiu s tng ln. Cc ht ti in
thiu s ny khuch tn qua mi ni to nn dng in ng k cng thm vo dng in
bo ha nghch I0 t nhin ca diod, thng l di vi trm nA vi quang diod Si v
di vi chc A vi quang diod Ge.
nhy ca quang diod ty thuc vo cht bn dn l Si, Ge hay Selenium Hnh
v sau y cho thy nhy theo tn s ca nh sng chiu vo cc cht bn dn ny:
Trang 151
Bin son: Trng Vn Tm

nhy (%)
100
Se
Si
Ge
75
50
25
0
2000
T ngoi
(Ao)
4000
6000
8000
10000
12000
14000
nh sng thy c Hng ngoi
Dng in nghch mA
0,5
4000fc
0,4
3000fc
0,3
2000fc
0,2
1000fc
0,1
Dng ti
L=0
in th phn cc nghch
0
Hnh 7
c tuyn V-I ca quang diod vi quang thng l thng s cho thy quang thng
nh khi in th phn cc nghch nh, dng in tng theo in th phn cc, nhng khi
in th phn cc ln hn vi volt, dng in gn nh bo ha (khng i khi in th
phn cc nghch tng). khi quang thng ln, dng in thay i theo in th phn cc
nghch. Tn s hot ng ca quang diod c th ln n hnh MHz. Quang diod cng
nh quang in tr thng c dng trong cc mch iu khin ng - m mch
in (dn in khi c nh sng chiu vo v ngng khi ti).
IV. QUANG TRANSISTOR (PHOTO TRANSISTOR).

Quang transistor l ni rng ng nhin ca quang diod. V mt cu to, quang
transistor cng ging nh transistor thng nhng cc nn h. Quang transistor c
mt thu knh trong sut tp trung nh sng vo ni P-N gia thu v nn.
Khi cc nn h, ni nn-pht c phn cc thuncht t do cc dng in r
(in th VBE lc khong vi chc mV transistor Si) v ni thu-nn c phn cc
nghch nn transistor vng tc ng.
V ni thu-nn c phn cc nghch nn c dng r Ico chy gia cc thu v cc
nn. V cc nn b trng, ni nn-pht c phn cc thun cht t nn dng in cc thu
l Ico(1+). y l dng ti ca quang transistor.
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Bin son: Trng Vn Tm
IC (mA)
hf
IC
Quang thng
VCC 2
1
K hiu
1
0
Phn cc
VCE
c tuyn V-I
Hnh 8
Khi c nh sng chiu vo mi ni thu nn th s xut hin ca cc cp in t v l

trng nh trong quang diod lm pht sinh mt dng in I do nh sng nn dng in
thu tr thnh: IC=(+1)(Ico+I)
Nh vy, trong quang transistor, c dng ti ln dng chiu sng u c nhn ln
(+1) ln so vi quang diod nn d dng s dng hn. Hnh trn trnh by c tnh V-I
ca quang transistor vi quang thng l mt thng s. Ta thy c tuyn ny ging nh
c tuyn ca transistor thng mc theo kiu cc pht chung.
C nhiu loi quang transistor nh loi mt transistor dng chuyn mch dng
trong cc mch iu khin, mch m loi quang transistor Darlington c nhy rt
cao. Ngoi ra ngi ta cn ch to cc quang SCR, quang triac
T2
G
Quang transistor
K
Quang SCR
Quang Darlington
T1
Quang TRIAC
Hnh 9
Vi ng dng ca quang transistor:

1. Quang k:
y l mch n gin o cng nh sng, bin tr 5K dng chun my
nh mt quang k mu. Khi nh sng chiu vo cng mch, quang transistor cng dn
mnh, kim in k lch cng nhiu. D nhin mch trn ta cng c th dng quang in
tr hay quang diod nhng km nhy hn.
Trang 153
volt
Bin son: Trng Vn Tm

K
5K
9V
Hnh 10
2. ng hay tt Relais:
+12V
+12V
Relay
.1
T2
R
C
R
T2
T1
Relay
.1
T1
Hnh 11
Trong mch ng relais, khi quang transistor c chiu sng n dn in lm T1

thng, Relais hot ng. Ngc li trong mch tt relais, trng thi thng trc quang
transistor khng c chiu sng nn quang transistor ngng v T1 lun thng, Relais
trng thi ng. Khi c chiu sng, quang transistor dn mnh lm T1 ngng, Relais
khng hot ng ( trng thi tt).
V. DIOD PHT QUANG (LED-LIGHT EMITTING

DIODE).
quang tr, quang diod v quang transistor, nng lng caq nh sng chiu vo
cht bn dn v cp nng lng cho cc in t vt di cm. Ngc li khi mt in t
t di dn in rt xung di ho tr th s pht ra mt nng lng E=h.f
Khi phn cc thun mt ni P-N, in t t do t vng N xuyn qua vng P v ti
hp vi l trng (v phng din nng lng ta ni cc in t trong di dn in c
nng lng cao ri xung di ho tr - c nng lng thp v kt hp vi l trng),
khi ti hp th sinh ra nng lng.
Trang 154
Bin son: Trng Vn Tm

Di dn in
Di
cm
hf
Di ha tr
Hnh 12
i vi diod Ge, Si th nng lng pht ra di dng nhit. Nhng i vi diod cu

to bng GaAs (Gallium Arsenide) nng lng pht ra l nh sng hng ngoi (khng
thy c) dng trong cc mch bo ng, iu khin t xa). Vi GaAsP (Gallium
Arsenide phosphor) nng lng pht ra l nh sng vng hay . Vi GaP (Gallium
phosphor), nng lng nh sng pht ra mu vng hoc xanh l cy. Cc Led pht ra nh
sng thy c dng lm n bo, trang tr Phn ngoi ca LED c mt thu knh
tp trung nh sng pht ra ngoi.
ID (mA)
R
Vcc
LED
ID
VD
10
8
6
4
2
0
K hiu
Phn cc
GaAsP
GaAsP vng
Si GaAs
GaP lc
.7 1
1.5 2
c tuyn
3 VD (volt)
Hnh 13
c nh sng lin tc, ngi ta phn cc thun LED. Ty theo vt liu cu to,
in th thm ca LED thay i t 1 n 2.5V v dng in qua LED ti a khong vi
mA.
VI. NI QUANG.
(OPTO COUPLER-PHOTOCOUPLER-OPTOISOLATOR)
Mt n LED v mt linh kin quang in t nh quang transistor, quang SCR,

quang Triac, quang transistor Darlington c th to nn s truyn tn hiu m khng cn
ng mch chung.
Cc ni quang thng c ch to di dng IC cho php cch ly phn in cng
sut m thng l cao th khi mch iu khin tinh vi pha LED. y l mt u im
rt ln ca ni quang.
Hnh sau y gii thiu mt s ni quang in hnh:
Trang 155
Bin son: Trng Vn Tm

1
3
4N25 (Transistor output)
4
4N29 (Darlington output)
3
HC11C2 (SCR output)
4
MOC3021 (Triac output)
Hnh 14
Hnh sau y gii thiu mt p dng ca ni quang
270
Ti
U1
MOC3021
Q1
510
510
In 3V 30V
150
51
110Vrms
220VAC
Hnh 15
- Q1: Bo v ni quang khi in th ngun ln (chia bt dng in qua LED).

- Khi LED sng, ni quang hot ng kch hai SCR hot ng (mi SCR hot ng
mt bn k khi c xung kch t ni quang) cp dng cho ti.
- Khi LED tt, ni quang ngng, 2 SCR ngng, ngt dng qua ti.
- Mch ny l mt v d v mch SSR (Solid State Relay).
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CHNG IX
S LC V IC
I. KHI NIM V IC - S KT T TRONG H THNG
IN T.
IC (Intergated-Circuit) l mt mch in t m cc thnh phn tc ng v th ng
u c ch to kt t trong hoc trn mt (subtrate) hay thn hoc khng th tch
ri nhau c. ny, c th l mt phin bn dn (hu ht l Si) hoc mt phin cch
in.
Mt IC thng c kch thc di rng c vi trm n vi ngn micron, dy c vi
trm micron c ng trong mt v bng kim lai hoc bng plastic. Nhng IC nh vy
thng l mt b phn chc nng (function device) tc l mt b phn c kh nng th
hin mt chc nng in t no . S kt t (integration) cc thnh phn ca mch in
t cng nh cc b phn cu thnh ca mt h thng in t vn l hng tm ti v theo
ui t lu trong ngnh in t. Nhu cu ca s kt t pht minh t s kt t tt nhin ca
cc mch v h thng in t theo chiu hng t n gin n phc tp, t nh n ln,
t tn s thp (tc chm) n tn s cao (tc nhanh). S tin trin ny l hu qu tt
yu ca nhu cu ngy cng tng trong vic x l lng tin tc (information) ngy cng
nhiu ca x hi pht trin.
Nhng h thng in t cng phu v phc tp gm rt nhiu thnh phn, b phn.
Do ny ra nhiu vn cn gii quyt:
1. Khong khng gian m s lng ln cc thnh phn chim ot (th tch). Mt
my tnh in t cn dng n hng triu, hng vi chc triu b phn ri. Nu khng
thc hin bng mch IC, th khng nhng th tch ca n s ln mt cch bt tin m
in nng cung cp cho n cng s v cng phc tp. M nu c tha mn chng na, th
my cng khng thc dng.
2. kh tn (reliability) ca h thng in t: l ng tin cy trong hot ng
ng theo tiu chun thit k. kh tn ca mt h thng tt nhin ph thuc vo
kh tn ca cc thnh phn cu thnh v cc b phn ni tip gia chng. H thng cng
phc tp, s b phn cng tng v ch ni tip cng nhiu. V vy, nu dng b phn ri
cho cc h thng phc tp, kh tn ca n s gim thp. Mt h thng nh vy s trc
trc rt nhanh.
3. Tui th trung bnh t ca mt h thng in t gm n thnh phn s l:
1
1
1
=
+
+ ......
t
t1
t2
Nu t1=t2=...=tn th t =
1
tn
ti
n
Trang 157
Bin son: Trng Vn Tm
Vy nu mt transistor c tui th l 108h, th mt my tnh gm 500000 ngn

10 8
transistor s ch c tui th
= 200 gi
5.10 5
Cc thnh phn trong IC c ch to ng thi v cng cng phng php, nn

tui th IC xp x mt tui th mt transistor Planar.
4. Mt h thng (hay mt my) in t c cu to nh hnh v:
B phn
linh kin
Vt liu
Mch in
t c bn
B phn cu
thnh h thng
H thng
in t
B phn chc nng
S kt t p dng vo IC thng thc hin giai on b phn chc nng. Song

khi nim kt t khng nht thit dng li giai on ny. Ngi ta vn n lc kt t
vi mt cc cao trong IC, nm hng ti vic kt t ton th h thng in t trn mt
phim (chp)
Nm
1947
1950
Cng
ngh
Pht
minh
Transi
-stor
Linh
kin
ri
S
Transistor
trn 1
chip trong
cc sn
phm
thng
mi
Cc sn
phm tiu
biu
BJT
Diode
1966
1971
1980
1985
1990
SSI
MSI
LSI
VLSI
ULSI
GSI
10
100
1000
1000
20000
20000
500000
>500000
>1000000
1961
Linh
Mch
kin
m, a
planar,
hp,
Cng
mch
logic,
cng
Flip Flop
Vi x
Vi x
l 8 bit,
l 16 v
ROM,
32 bit
RAM
Vi x l
chuyn
dng, x
l nh,
thI gian
thc
SSI: Small scale integration: Tch hp qui m nh

MSI: Medium scale intergration: Tch hp qui m trung bnh
LSI: Large scale integration: Tch hp theo qui m ln
GSI: Ultra large scale integration: Tch hp qui m khng l
Tm li, cng nh IC a n nhng im li so vi k thut linh kin ri nh sau:
- Gi thnh sn phm h
- Kch c nh
- kh tn cao (tt c cc thnh phn c ch to cng lc v khng c nhng

Trang 158
Bin son: Trng Vn Tm
im hn, ni).
- Tng cht lng (do gi thnh h, cc mt phc tp hn c th c chn h thng
t n nhng tnh nng tt nht).
- Cc linh kin c phi hp tt (matched). V tt c cc transistor c ch to ng
thi v cng mt qui trnh nn cc thng s tng ng ca chng v c bn c cng
ln i vi s bin thin ca nhit .
- Tui th cao.
II. CC LOI IC.

Da trn qui trnh sn xut, c th chia IC ra lm 3 loi:
1. IC mng (film IC):

Trn mt bng cht cch in, dng cc lp mng to nn cc thnh phn khc.
Loi ny ch gm cc thnh phn th ng nh in tr, t in, v cun cm m thi.
Dy ni gia cc b phn: Dng mng kim loi c in tr st nh nh Au, Al,Cu...
in tr: Dng mng kim loi hoc hp kim c in tr sut ln nh Ni-Cr; Ni-Cr-Al;
Cr-Si; Cr c th to nn in tr c tr s rt ln.
T in: Dng mng kim loi ng vai tr bn cc v dng mng in mi SiO;
SiO2, Al2O3; Ta2O5. Tuy nhin kh to c t c in dung ln hn 0,02F/cm2.
Cun cm: dng mt mng kim loi hnh xon. Tuy nhin kh to c cun cm ln
qu 5H vi kch thc hpl. Trong s IC, ngi ta trnh dng cun cm khng
chim th tch.
Cch in gia cc b phn: Dng SiO; SiO2; Al2O3.
C mt thi, Transistor mng mng c nghin cu rt nhiu ng dng vo IC

mng. Nhng tic l transistor mng cha t n giai on thc dng, nu khng phi l
t c trin vng thc dng.
2. IC n tnh th (Monolithic IC):

Cn gi l IC bn dn (Semiconductor IC) l IC dng mt (Subtrate) bng cht
bn dn (thng l Si). Trn (hay trong) , ngi ta ch to transistor, diode, in
tr, t in. Ri dng cht cch in SiO2 ph ln che ch cho cc b phn trn lp
SiO2, dng mng kim loi ni cc b phn vi nhau.
Transistor, diode u l cc b phn bn dn.
in tr: c ch to bng cch li dng in tr ca lp bn dn c khuch tn tp
cht.
T in: c ch to bng cch li dng in dung ca vng him ti mt ni P-N b
phn cc nghch.
i khi ngi ta c th thm nhng thnh phn khc hn ca cc thnh phn k trn
dng cho cc mc ch c th
Trang 159
Bin son: Trng Vn Tm
Cc thnh phn trn c ch to thnh mt s rt nhiu trn cng mt chip. C rt

nhiu mi ni gia chng v chng c cch ly nh nhng ni P-N b phn cc nghch
(in tr c hng trm M)
3. IC lai (hibrid IC).

L loi IC lai gia hai loi trn
T vi mch mng mng (ch cha cc thnh phn th ng), ngi ta gn ngay trn
ca n nhng thnh phn tch cc (transistor, diode) ti nhng ni dnh sn. Cc
transistor v diode gn trong mch lai khng cn c v hay ring, m ch cn c bo
v bng mt lp men trng.
u im ca mch lai l:
-
C th to nhiu IC (Digital hay Analog)

C kh nng to ra cc phn t th ng c cc gi tr khc nhau vi sai s nh.
C kh nng t trn mt , cc phn t mng mng, cc transistor, diode v ngay c
cc loi IC bn dn.
Thc ra khi ch to, ngi ta c th dng qui trnh phi hp. Cc thnh phn tc
ng c ch to theo cc thnh phn k thut planar, cn cc thnh phn th ng th
theo k thut mng. Nhng v qu trnh ch to cc thnh phn tc ng v th ng
c thc hin khng ng thi nn cc c tnh v thng s ca cc thnh phn th
ng khng ph thuc vo cc c tnh v thng s ca cc thnh phn tc ng m ch
ph thuc vo vic la chn vt liu, b dy v hnh dng. Ngoi ra, v cc transistor ca
IC loi ny nm trong , nn kch thc IC c thu nh nhiu so vi IC cha transistor
ri.
IC ch to bng qui trnh phi hp ca nhiu u im. Vi k thut mng, trn mt
din tch nh c th to ra mt in tr c gi tr ln, h s nhit nh. iu khin tc
ngng ng ca mng, c th to ra mt mng in tr vi chnh xc rt cao.
III. S LC V QUI TRNH CH TO MT IC N

TINH TH.
Cc giai on ch to mt IC n tinh th c thnh phn tc ng l BJT, c n
gin ha gm cc bc sau:
Bc 1:
SiO2
25 75mm
0.025mm
n - Si
0.15mm
Nn P-Si
0.5m
n - Si
Nn P-Si
0.15mm
Hnh 1
Trang 160
Bin son: Trng Vn Tm
a. T mt nn P-Si (hoc n-Si) n tinh th

b. To mt lp epitaxy mng loi N-Si
c. Ph mt lp cch in SiO2
Bc 2:
uv
Dng phng php quang khc kh lp SiO2 film

mt s ch nht nh, to ra cc ca s b mt tinh Cht cm
quang
th. T cc ca s, c th khuch tn tp cht vo.
u tin, v s nhng ni cn m ca s,
chp hnh s ri ly phim m bn, thu nh li.
Nhng ni cn m ca s l vng ti trn phim
a. Bi mt lp cn quang trn b mt. t phim trn ri

tia cc tm vo nhng ni cn m ca s c lp en trn
phim bo v. Nhng tinh th vo dung dch tricloetylen.
Ch nhng ni cn m ca s lp cn quang mi b ha tan,
cc ni khc rn li.
b.Li em tinh th nhng vo dung dch fluorhydric. Ch
nhng ni cn m ca s lp SiO2 b ha tan, nhng ni
khc nh lp cn quang che ch.
c. em ty lp cn quang
d. Khuch tn cht bn dn P su n thn, to ra cc o
N.
e. Li m ca s, khuch tn cht bn dn P vo cc o N
(khuch tn Base)
f. Li m ca s, khuch tn cht bn dn N vo (khuch
tn Emitter)
g. Ph kim loi. Thc hin cc ch ni
SiO2
n-Si
P-Si
Ha tan Rn li
Cht cm
quang
SiO2
n-Si
P-Si
Ha tan
SiO2
n-Si
P-Si
Khuch tn p
SiO2
o
Thn
P
Khuch tn Base
Th d:
Mt mch in n gin nh sau, c ch to di dng
IC n tinh th.
SiO2
p
4
SiO2
n
p
D1
Hnh 3
Khuch tn Emitter
1
D1
Nn
P
n
Nn
P
Hnh 2
Trang 161
Bin son: Trng Vn Tm
in tr
2
Kim loi Al
Diode
1
B
Diode ni
3
n+
SiO2
Transistor
5
4
n+
n+
n+
Base
p
n
n+
n Collector
Thn p
Hnh 4
Emitter
Tip xc kim loi
IV. IC S (IC DIGITAL) V IC TNG T (IC

ANALOG).
Da trn chc nng x l tn hiu, ngi ta chia IC l hai loi: IC Digital v IC
Analog (cn gi l IC tuyn tnh)
1. IC Digital:
L loi IC x l tn hiu s. Tn hiu s (Digital signal) l tn hiu c tr gi nh phn
(0 v 1). Hai mc in th tng ng vi hai tr gi (hai logic) l:
- Mc High (cao): 5V i vi IC CMOS v 3,6V i vi IC TTL
- Mc Low (thp): 0V i vi IC CMOS v 0,3V i vi IC TTL
Thng thng logic 1 tng ng vi mc H, logic 0 tng ng vi mc L
Logic 1 v logic 0 ch hai trng thi i nghch nhau: ng v m, ng v sai,
cao v thp
Chng loi IC digital khng nhiu. Chng ch gm mt s cc loi mch logic cn
bn, gi l cng logic.
V cng ngh ch to, IC digital gm cc loi:
- RTL: Resistor Transistor logic
- DTL: Diode Transistor logic
- TTL: Transistor Transistor logic
Trang 162
Bin son: Trng Vn Tm
- MOS: metal oxide Semiconductor

- CMOS: Complementary MOS
2. IC analog:
L loi IC x l tn hiu Analog, l loi tn hiu bin i lin tc so vi IC Digital, loi
IC Analog pht trin chm hn. Mt l do l v IC Analog phn ln u l mch chuyn dng
(special use), tr mt vi trng hp c bit nh OP-AMP (IC khuch i thut ton), khuch
i Video v nhng mch ph dng (universal use). Do tho mn nhu cu s dng, ngi
ta phi thit k, ch to rt nhiu loi khc nhau.
Ti liu tham kho

**********
1. Fleeman - Electronic Devices, Discrete and Intergrated - Printice - Hall International1998.

2. Boylestad and Nashelky - Electronic Devices and Circuit Theory - Printice - Hall
International 1998.
3. J.Millman - Micro electronics, Digital and Analog, Circuits and Systems - Mc.Graw.Hill
Book Company - 1979.
4. Nguyn Hu Phng - in t trung cp - S Gio Dc & o To TP HCM-1992
Trang 163
Bin son: Trng Vn Tm

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Gio trnh Linh Kin in T

Linh kin in t l kin thc bc u v cn bn ca ngnh in t.

Cn Th, thng 12 nm 2003

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

LINH NG V DN XUT: ..................................................................................................................................12

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

SCR (THYRISTOR SILICON CONTROLLED RECTIFIER).....................................................................................126

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

I. KHI NIM V C HC NGUYN LNG:

Mi in t chuyn ng trn mt ng trn v chu mt gia tc xuyn tm. Theo

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

C nhng qu o t bit, trn in t c th di chuyn m khng pht ra nng

Khi in t di chuyn t mt qu o tng ng vi mc nng lng w1 sang qu

Trong mi qu o dng, moment ng lng ca in t bng bi s ca

Vi gi thuyt trn, ngi ta d on c cc mc nng lng ca nguyn t

Tng hp tt c gi thuyt trn l mn c hc nguyn lng, kh d c th gii thch

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

E: nng lng ton phn

l mt hm s gi l hm s sng. Hm s ny xc nh xc sut tm thy ht in

Trong mt h thng gm nhiu nguyn t, cc s nguyn lng tun theo nguyn l

II. PHN B IN T TRONG NGUYN T THEO

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

Theo mc nng lng

1s2 2s2 2p6 3s1

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

1s2 2s2 2p6 3s2 3p2

1s2 2s2 2p6 3s2 3p6 4s2 3d10 4p2

Lp bo ha: Mt ph tng bo ha khi c s in t ti a.

III. DI NNG LNG: (ENERGY BANDS)

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

Ta xt mt mng tinh th gm N nguyn t thuc nhm 4A, th d C6. Ta tng

4N trng thi b chim

Ta c mt h thng gm N nguyn t, do cc nguyn t phi tun theo nguyn l

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

b cc di nng lng tu thuc vo dng tinh th v nguyn t s. Ngi ta xc nh s

Vy nng lng m mt in t tip nhn khi vt mt hiu in th 1 volt l:

Nng lng ny c gi l 1eV (1eV=1,602.10-19J)

Di dn in (Di nng lng

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

Di cm c cao kh ln (EG>5eV). y l trng hp ca cc cht cch in. Th

Gi s ta tng nhit ca tinh th, nh s cung cp nhit nng, in t trong di

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

Gi s, mt in trng E c thit lp trong mng tinh th kim loi, ta th kho

Hnh trn m t chuyn ng ca in t di tcdng ca in trng E . Qu o

By gi, ta xt mt in tch vi cp S t thng gc vi chiu di chuyn ca in t.

in tr sut tnh bng m v dn sut tnh bng mho/m

Bin son: Trng Vn Tm

Gio trnh Linh Kin in T

II. PHNG PHP KHO ST CHUYN NG CA

Phng php kho st ny cn c trn nh lut bo ton lng. d hiu, ta xt