Professional Documents
Culture Documents
-2-
Lu :
Mi sinh vin hy t tr li cu hi v lm bi tp trc tip vo ti liu ny.
Khng c sao chp bi gii ca ngi khc.
i vi phn cu hi trc nghim, SV lm bi chn mt phng n thch hp
nht trong mi cu hi, bng cch khoanh trn hoc nh du vo u dng
phng n c chn, v gii thch ngn gn vo phn trng bn cnh hoc
pha di mi cu hi. i vi cc bi tp, hy ghi li gii vo ngay phn
trng tng ng mi bi tp.
Ti liu tham kho:
Bi ging Cu kin in t. 2001 [ D Quang Bnh ].
Electronic Devices. 2012 [Thomas L Floyd].
Fundamentals of Linear Electronics Integrated and Dicrete, 1998 [James
Cox ].
Lin h khi cn: Thy Bnh, 0905894666, hoc: binhduquang@gmail.com
Thi hn hon thnh v np bi tp: (vo bui thi . . . . . . . . . . . )
ti bm: K thut in t, khoa in t-Vin thng, Trng i hc Bch
Khoa, 54 Nguyn Lng Bng, Q. Lin Chiu, Tp Nng.
(Khng chp nhn s chm tr).
-3-
TM TT NI DUNG V VT LIU BN DN & DIODE
1-1. Tun theo m hnh c hc c in Bohr, nguyn t c xem nh c cu trc kiu-h hnh
tinh vi cc qu o in t trn cc khong cch khc nhau xung quanh nhn trung tm.
Tun theo m hnh c hc lng t, cc in t khng tn ti cc qu o trn chnh xc
nh cc ht c bn theo m hnh Bohr. Cc in t c th l sng hoc ht v nh v chnh
xc ti thi im bt k l khng r rng.
Nhn ca nguyn t bao gm cc proton v cc neutron. Proton c in tch dng v neutron
khng mang in tch. S lng cc proton l s nguyn t lng ca nguyn t.
Cc in t c in tch m v trn qu o xung quanh nhn ti cc khong cch ty thuc
vo mc nng lng ca cc in t. Nguyn t c cc di nng lng gin on c gi l
cc lp m trong l qu o ca in t. Cu trc nguyn t cho php s lng in t
ln nht trong mi lp no . trng thi t nhin ca n, tt c cc in t u trung ha
v in tch do cc nguyn t c s lng proton v electron bng nhau.
Lp hay di ngoi cng ca nguyn t c gi l di ha tr, nn cc in t c trn qu o
di ny c gi l cc in t ha tr. Cc in t ha tr c mc nng lng cao nht
trong tt c cc mc nng lng trong nguyn t. Nu mt in t ha tr nhn nng
lng t mt ngun nng lng bn ngoi chng hn nhit nng, th in t c th nhy ra
khi di ha tr v ri xa khi nguyn t ca n.
1-2. Vt liu cch in c rt t cc in t t do nn khng c dng in tt c cc iu kin
thng thng.
Cc vt liu dn in c s lng ln cc in t t do nn dn dng in rt tt.
Cc vt liu bn dn c dn in trong khong gia cc vt liu dn in v cch in.
Cc nguyn t ca cht bn dn c bn in t ha tr. Silicon l vt liu bn dn c s
dng ph bin nht.
Cc nguyn t ca cht bn dn lin kt vi nhau theo m hnh i xng to thnh vt liu
rn c gi l tinh th. Cc lin kt gi tinh th vi nhau c gi l cc lin kt ng
ha tr.
1-3. in t ha tr thot khi nh hng nguyn t gc c gi l in t dn hay in t t do.
Cc in t t do c nng lng cao hn so vi cc in t di ha tr, nn t do di
chuyn trong khp vt liu.
Khi mt in t thot khi nh hng ca nhn tr nn t do, in t s li mt l trng
trong di ha tr tc l to ra mt cp in t-l trng. Cc cp in t-l trng l c to ra
do nhit nng bi v in t nhn nng lng nhit t ngoi thot khi nguyn t
ca n.
Mt in t t do s mt nng lng cui cng ri tr li vo mt l trng. iu ny c
gi l s ti hp. Cc cp in t-l trng c to ra lin tc do nhit nn lun lun c cc
in t t do trong vt liu.
Khi t mt in p ngang qua mu vt liu bn dn, cc in t t do c to ra do nhit di
chuyn v pha u dng v to thnh dng in. y l mt loi dng in c gi l
dng in do in t.
Mt loi dng in khc l dng in do l trng. Dng in ny xut hin khi cc in t
ha tr di chuyn khi l trng to nn l trng, trong thc t s di chuyn ca cc l trng
theo chiu ngc li.
1-4. Vt liu bn dn tp dng-n c to ra bng cch b sung cc nguyn t tp cht c nm
in t ha tr. Cc tp cht l cc nguyn t ha tr nm. Bn dn tp dng-p c to ra
bng cch b sung cc nguyn t tp cht ch c ba in t ha tr. Cc tp cht l cc
nguyn t ha tr ba.
Qu trnh b sung cc tp cht ha tr nm hoc ha tr ba vo mt cht bn dn c gi l
pha tp.
Cc ht ti in a s trong vt liu bn dn tp dng-n l cc in t t do c c bng qu
trnh pha tp, v cc ht ti in thiu s l cc l trng c to ra do nhit pht sinh cc cp
in t-l trng. Cc ht ti in a s trong vt liu bn dn tp dng-p l cc l trng c
-4-
c bi qu trnh pha tp, cn cc ht ti in thiu s l cc in t t do c to ra do
nhit pht sinh cc cp in t-l trng.
1-5. Tip gip pn c hnh thnh khi mt phn vt liu c pha tp dng-n v mt phn vt liu
c pha tp dng-p. Vng ngho s to thnh bt u ti tip gip tc l khng c cc ht
ti in a s. Vng ngho c hnh thnh bi s i-on ha.
i vi tip gip silicon th chn in hnh l 0,7 V v i vi diode germanium l 0,3 V.
1-6. Dng in chy qua diode ch khi diode c phn cc thun. Xt theo l tng, khng c
dng in chy qua diode khi khng phn cc hoc phn cc ngc cho diode. Thc t, c
dng in rt nh khi diode c phn cc ngc do cc ht ti in thiu s c to ra bi
nhit nng, nhng mc dng ngc rt nh nn thng c th b qua.
S nh thng thc l xy ra khi diode c phn cc ngc nu in p phn cc bng hoc
vt qu in p nh thng.
Diode s dn in khi c phn cc-thun v s ngng dn khi c phn cc-ngc.
in p nh thng ngc ca mt diode thng ln hn 50 V.
1-7. c tuyn V-I th hin dng chy qua diode ph thuc vo in p st trn diode.
in tr ca diode khi c phn cc-thun c gi l in tr ng hay in tr ac.
Dng ngc chy qua diode s tng rt nhanh ti mc in p nh thng ngc.
nh thng ngc cn phi trnh i vi phn ln diode.
1-8. M hnh l tng xem diode nh mt chuyn mch kn khi phn cc thun v nh mt h
mch khi phn cc ngc.
M hnh thc t xem diode nh mt chuyn mch mc ni tip vi ngun th chn.
M hnh y bao gm in tr thun ng mc ni tip vi m hnh thc t khi phn cc
thun v in tr ngc mc song song vi chuyn mch h khi phn cc ngc.
1-9. Ngun cung cp dc in hnh gm bin p, mch chnh lu bng diode, mch lc v b n
nh in p.
Diode n trong mch chnh lu bn k khi c phn cc-thun s dn trong khong 180
ca chu k tn hiu vo.
Tn s ca tn hiu ra mch chnh lu bn k bng tn s tn hiu vo.
in p ngc nh (PIV) l mc in p ln nht ngang qua diode khi phn cc ngc.
1-10. Mi diode trong mch chnh lu ton k khi c phn cc-thun s dn trong khong 180
ca chu k tn hiu vo
Tn s ca tn hiu ra mch chnh lu ton k l gp hai ln tn s tn hiu vo.
Hai kiu mch chnh lu ton k c bn l mch cu v mch cun dy im gia.
in p ra nh ca mch chnh lu ton k im gia xp x bng mt na in p th cp
nh ton b tr st p ca mt diode.
PIV ca mi diode trong mch chnh lu ton k im gia l gp hai ln in p ra nh
cng vi mc st p trn mt diode.
in p ra nh ca mch chnh lu cu bng in p th cp nh ton b tr st p trn hai
diode.
PIV ca mi diode trong mch chnh lu cu xp x bng mt na in p i vi cu hnh
im gia tng ng v bng in p ra nh cng vi mc st p trn mt diode.
1-11. B lc u vo bng t s cung cp mc in p ra dc xp x bng mc nh ca in p p
vo c chnh lu.
in p gn c pht sinh do s np v x ca t lc.
Lc tt hn khi mc in p gn nh hn.
S n nh in p ra trn mt khong in p vo c gi l n nh u vo hay n nh
ngun cung cp.
S n nh in p ra trn mt khong dng ti c gi l n nh ti.
1-12. B xn hay mch hn bng diode ch s ct in p cao hn hay thp hn cc mc c
quy nh.
B ghim bng diode b sung mc dc i vi in p ac.
1-13. Cc b nhn p c s dng trong cc ng dng in p-cao, dng-thp chng hn nh dng
gia tc chm tia in t trong ng tia (CRT) v dng gia tc ht c bn.
nhn p s dng hng lot cc tng diode-t in.
in p t vo c th c nhn i, nhn ba, hoc nhn 4.
-5-
1-14. Trang s liu (datasheet) cho bit thng tin chnh v cc thng s v cc c tuyn ca mt
cu kin in t.
Diode cn phi lun lun lm vic di cc thng s ln nht xc thc c quy nh trang
s liu.
1.15. Nhiu DMM cho chc nng o th diode.
DMM hin th st p ca diode khi diode lm vic ng phn cc thun.
Phn ln cc DMM ch th OL khi diode h mch.
X l s c l p dng suy xt hp l kt hp vi kin thc y v mch hoc h thng
nhn dng v sa cha sai hng.
X l s c l qu trnh ba-bc gm phn tch, c lp v o.
Phn tch li l c lp h hng cho mt mch c th hay mt phn ca mch.
1.16. Diode n p [zener] hot ng vng nh thng ngc.
C hai c ch nh thng diode n p: l nh thng thc l v nh thng zener.
Khi 6, 3 V
Z
V < nh thng zener chim u th.
Khi 6, 3 V
Z
V > nh thng thc chim u th.
Diode n p s duy tr in p gn nh khng i trn hai in cc ca n trong khong dng
in zener quy nh.
Diode n p c sn nhiu cp in p t di 1 V n trn 250 V.
1.17. Diode n p c s dng lm cc ngun in p chun, cc n p, v cc b hn ch.
1.18. Diode bin dung [varactor] hot ng nh mt t thay i trng thi phn cc-ngc.
in dung ca varactor bin thin t l nghch vi in p phn cc-ngc.
Diode n nh dng s duy tr dng thun ca n ti gi tr khng i c quy nh.
1.19. Diode pht quang [LED] s pht ra nh sng khi c phn cc-thun.
Cc LED c sn pht ra hng ngoi hoc nh sng nhn thy.
Cc LED cng sng-cao c s dng trong cc b hin th mn hnh-ln, n giao
thng, n chiu sng -t v n chiu sng trong nh.
LED hu c [OLED] s dng hai hay ba lp vt liu hu c to ra nh sng.
Cc im lng t l cc cu kin bn dn pht ra nh sng khi c cung cp nng lng t
ngun bn ngoi.
Photodiode biu hin s tng ln v dng ngc theo cng chiu sng.
1.20. Diode Schottky c tip gip kim loi-bn dn. Diode Schottky c s dng trong cc ng
dng tc chuyn mch-cao.
Diode tunnel c s dng trong cc mch dao ng.
Diode pin c vng bn dn tp-p, vng bn dn tp-n, v vng bn dn nguyn cht (i) nn s
biu hin c tnh ca in tr bin thin khi c phn cc-thun v in dung khng i
khi c phn cc-ngc.
Diode laser tng t LED ngoi tr diode laser pht ra nh sng kt hp (bc sng n) khi
dng thun vt qu gi tr ngng.
-6-
1-1. S lng in t ln nht trong mt lp bt k:
2
2
e
N n =
1-2. Dng thun theo m hnh l tng ca diode:
BIAS
F
LIMIT
V
I
R
=
1-3. Dng thun theo m hnh thc t ca diode:
BIAS F
F
LIMIT
V V
I
R
=
1-4. Gi tr trung bnh ca in p ra mch chnh lu bn k:
AVG
p
V
V
t
=
1-5. in p ra nh ca chnh lu bn k (silicon):
( ) ( )
- 0, 7 V
p out p in
V V =
1-6. in p ngc nh mch chnh lu bn k:
( )
PIV
p in
V =
1-7. Gi tr trung bnh ca in p chnh lu ton k:
AVG
2
p
V
V
t
=
1-8. in p ra ca chnh lu ton k im gia: - 0, 7 V
2
sec
out
V
V =
1-9. in p ngc nh mch chnh lu ton k im gia:
( )
PIV 2 + 0, 7 V
p out
V =
1-10. in p ra ca chnh lu cu ton k:
( ) ( )
- 1, 4 V
p out p sec
V V =
1-11. in p ngc nh mch chnh lu cu ton k:
( )
PIV + 0, 7 V
p out
V =
1-12. H s gn:
( )
DC
r pp
V
r
V
=
1-13. in p gn nh-nh khi c t lc u vo:
( ) ( )
1
r pp p rect
L
V V
fR C
| |
~
|
\ .
1-14. in p ra DC khi c t lc u vo:
DC ( )
1
1
2
p rect
L
V V
fR C
| |
=
|
\ .
1-15. n nh ngun:
OUT
IN
Line regulation 100%
V
V
| | A
=
|
A
\ .
1-16. n nh ti:
NL FL
FL
Load regulation 100%
V V
V
| |
=
|
\ .
1-17. Tr khng ca Zener:
Z
Z
Z
V
Z
I
A
=
A
1-18. thay i ca
Z
V khi TC tnh theo %/C:
Z Z
Z V TC T A = A
1-19. thay i ca
Z
V khi TC tnh theo mV/C:
Z
Z TC T A = A
-7-
Cu hi v vt liu bn dn v diode
1. Mi nguyn t bit u c
(a) kiu cc nguyn t ng nht; (b) s lng cc nguyn t nh nhau;
(c) kiu nguyn t duy nht; (d) nhiu kiu nguyn t khc nhau.
2. Mt nguyn t bao gm
(a) mt nhn v ch mt in t; (b) mt nhn v mt hoc nhiu in t;
(c) cc proton, cc in t, v cc neutron; (d) c (b) v (c).
3. Nhn ca mt nguyn t c to thnh bi
(a) cc proton v cc neutron; (b) cc in t;
(c) cc in t v cc proton; (d) cc in t v cc neutron.
4. in t ha tr c
(a) qu o gn nhn nht; (b) qu o xa nhn nht;
(c) cc qu o khc nhau xung quanh nhn; (d) khng lin quan vi nguyn t ring bit.
5. I-on dng c to thnh khi
(a) mt in t ha tr thot ra xa khi nguyn t;
(b) c nhiu l trng hn so vi in t qu o ngoi cng;
(c) hai nguyn t lin kt vi nhau;
(d) mt nguyn t nhn thm mt in t ha tr.
6. Vt liu bn dn c s dng ph bin nht trong cc cu kin in t l
(a) germanium; (b) carbon; (c) copper; (d) silic.
7. S khc nhau gia cht cch in v cht bn dn l
(a) khe nng lng gia di ha tr v di dn rng hn; (b) s lng in t t do;
(c) cu trc nguyn t; (d) c (a), (b), v (c).
8. Di nng lng m trong cc in t t do tn ti l
(a) di th nht; (b) di th hai; (c) di dn; (d) di ha tr.
9. Trong tinh th bn dn, cc nguyn t c lin kt vi nhau do
(a) s tng tc ca cc in t ha tr; (b) cc lc hp dn;
(c) cc lin kt ng ha tr; (d) c (a), (b), v (c).
10. S nguyn t lng ca silicon l
(a) 8; (b) 2; (c) 4; (d) 14.
11. S nguyn t lng ca germanium l
(a) 8; (b) 2; (c) 4; (d) 32.
12. Lp ha tr mt nguyn t silicon c s th t l
(a) 0; (b) 1; (c) 2; (d) 3.
-8-
13. Mi nguyn t trong tinh th silicon c
(a) bn in t ha tr; (b) bn in t trong di dn;
(c) tm in t ha tr, 4 in t ca chnh nguyn t v 4 in t c gp chung;
(d) khng c cc in t ha tr do tt c in t c gp chung vi cc nguyn t khc.
14. Cc cp in t - l trng c to thnh bi
(a) s ti hp; (b) nng lng nhit; (c) s ion ha; (d) s pha tp.
15. C s ti hp khi
(a) mt in t ri vo mt l trng; (b) mt ion dng v mt ion m lin kt vi nhau;
(c) in t di ha tr tr thnh in t di dn; (d) mt tinh th c hnh thnh.
16. Dng in trong cc cht bn dn c to ra bi
(a) ch do cc in t; (b) ch do cc l trng;
(c) cc i-on m; (d) c cc in t v cc l trng.
17. Trong cht bn dn thun (c bn)
(a) khng c cc in t t do; (b) cc in t t do c to ra do nhit; (c) ch c cc l trng;
(d) c bao nhiu in t s c by nhiu l trng; (e) gm c (b) v (d).
18. Qu trnh b sung tp cht vo cht bn dn thun gi l
(a) s pha tp; (b) s ti hp; (c) s bin i nguyn t; (d) s ion ha.
19. Tp cht ha tr 3 c b sung vo silicon to thnh
(a) germanium; (b) cht bn dn tp dng-p; (c) cht bn dn tp dng-n; (d) vng ngho.
20. Chc nng ca tp cht ha tr 5 l
(a) lm gim dn in ca silicon; (b) tng s lng l trng;
(c) lm tng s lng cc in t t do; (d) to ra cc ht ti in thiu s.
21. Cc ht ti in a s trong bn dn tp dng-n l
(a) cc l trng; (b) cc in t ha tr; (c) cc in t trong di dn; (d) cc proton.
22. Cc l trng trong bn dn tp dng-n l
(a) ht ti in thiu s c to ra do nhit;(b) ht ti in thiu s c to ra do pha tp;
(c) cc ht ti in a s c to ra do nhit;(d) cc ht ti in a s c to ra do pha tp.
23. Tip gip pn c to thnh do
(a) s ti hp ca cc in t v l trng; (b) s i-on ha;
(c) bin gii ca vt liu dng-p v dng-n; (d) s va chm ca mt proton v mt neutron.
-9-
24. Vng ngho c to ra do
(a) s i-on ha; (b) s khuych tn; (c) s ti hp; (d) gm c (a), (b), v (c).
25. Vng ngho gm
(a) vng khng c g c ngoi cc ht ti in thiu s; (b) cc i-on dng v m;
(c) khng c cc ht ti in a s; (d) c (b) v (c).
26. Thut ng phn cc [bias] c ngha l
(a) t s ca ht ti in a s i vi ht ti in thiu s;
(b) mc dng in chy qua diode;
(c) mc in p dc t vo iu khin s hot ng ca mt cu kin;
(d) ngoi cc phng n trn.
27. phn cc thun mt diode
(a) in p ngoi t vo l dng ti anode v m ti cathode;
(b) in p ngoi t vo l m ti anode v dng ti cathode;
(c) in p ngoi t vo l dng ti vng p v m ti vng n;
(d) c (a) v (c).
28. Khi mt diode c phn cc thun,
(a) dng in duy nht l dng l trng; (b) dng in duy nht l dng in t;
(c) dng in duy nht l c to ra do cc ht ti in a s;
(d) dng in c to ra do c cc l trng v cc in t.
29. Mc d dng in b ngng khi phn cc ngc,
(a) nhng c mt mc dng in no do cc ht ti in a s;
(b) nhng c mt mc dng in rt nh do cc ht ti in thiu s;
(c) nhng c dng do nh thng thc.
30. i vi mt diode silicon, tr s ca in p phn cc thun in hnh
(a) cn phi ln hn 0,3V; (b) cn phi ln hn 0,7V;
(c) ty thuc vo rng ca vng ngho; (d) ph thuc vo nng ca ht ti in a s.
31. Khi c phn cc thun, diode s
(a) ngng dn; (b) dn dng; (c) c in tr cao; (d) st gim mc in p ln.
32. Mt diode thng lm vic
(a) vng nh thng ngc; (b) vng phn cc-thun;
(c) vng phn cc-ngc; (d) hoc (b) hoc (c).
33. in tr ng c th quan trng khi diode
(a) c phn cc ngc; (b) c phn cc-thun;
(c) vng nh thng-ngc; (d) cha c phn cc.
-10-
34. c tuyn I-V ca diode th hin
(a) in p ngang qua diode theo mc dng cho;
(b) mc dng in theo mc in p phn cc cho;
(c) tiu tn cng sut; (d) ngoi cc phng n trn.
35. Xt mt cch l tng, mt diode c th c tng ng vi mt
(a) ngun in p; (b) in tr; (c) chuyn mch; (d) tt c cc phn t trn.
36. M hnh diode thc t l
(a) mc th ro c a vo tnh ton; (b) gi tr in tr ng c a vo tnh ton;
(c) ngoi hai trng hp (a) v (b); (d) c (a) v (b).
37. Trong m hnh diode y ,
(a) mc th ro c a vo tnh ton; (b) tr s in tr ng thun c a vo tnh ton;
(c) tr s in tr ngc c a vo tnh ton; (d) tt c cc thng s trn.
38. Gi tr trung bnh ca in p chnh lu bn k vi tr s nh 200 V l
(a) 63,7 V; (b) 127,2 V; (c) 141 V; (d) 0 V.
39. Khi t in p sinusoidal 60 Hz vo u vo ca mch chnh lu bn k, tn s tn hiu ra l
(a) 120 Hz; (b) 30 Hz; (c) 60 Hz; (d) 0 Hz.
40. Gi tr nh ca in p ti u vo ca mch chnh lu bn k l 10 V. Gi tr nh gn ng ca
in p ti u ra l
(a) 10 V; (b) 3,18 V; (c) 10,7 V; (d) 9,3 V.
41. i vi mch cu hi 40, diode cn phi c kh nng chu in p ngc l
(a) 10 V; (b) 5 V; (c) 20V; (d) 3,18 V.
42. Gi tr trung bnh ca in p c chnh lu ton k vi tr s nh 75 V l
(a) 53 V; (b) 47,8 V; (c) 37,5 V; (d) 23,9 V.
43. Khi t in p sinusoidal 60 Hz vo u vo ca mch chnh lu ton k, tn s tn hiu ra l
(a) 120 Hz; (b) 60 Hz; (c) 240 Hz; (d) 0 Hz.
44. in p th cp ton b mch chnh lu ton k im-gia l 125 V rms. B qua st p ca
diode, in p ra hiu dng (V rms) l
(a) 125 V; (b) 177 V; (c) 100 V; (d) 62,5 V.
-11-
45. Khi in p ra nh l 100 V, tr s in p ngc nh (PIV) cn phi c cho mi diode trong
mch chnh lu ton k im gia l (b qua st p ca diode)
(a) 100 V; (b) 200 V; (c) 141 V; (d) 50 V.
46. Khi in p ra hiu dng (rms) ca mch chnh lu cu ton k l 20 V, in p ngc nh
ngang qua cc diode l (b qua st p trn diode)
(a) 20 V; (b) 40 V; (c) 28,3 V; (d) 56,6 V.
47. in p ra dc l tng ca mch lc u vo bng t s bng vi
(a) gi tr nh ca in p c chnh lu;
(b) gi tr trung bnh ca in p c chnh lu;
(c) gi tr hiu dng ca in p c chnh lu.
48. Mt b lc ngun cung cp cho in p ra c gn l 100 mV nh-nh v gi tr dc l 20 V?.
H s gn l
(a) 0,05; (b) 0,005; (c) 0,00005; (d) 0,02.
49. in p c chnh lu ton k nh l 60 V t vo mch lc u vo bng t. Nu f = 120
Hz; =10 k
L
R , v =10 F C , in p gn l
(a) 0,6 V; (b) 6 mV; (c) 5,0 V; (d) 2,88 V.
50. Nu gim in tr ti ca b chnh lu ton k c lc bng t, th in p gn
(a) s tng ln; (b) s gim xung; (c) khng nh hng; (d) c tn s khc.
51. n nh theo in p ngun c xc nh bng
(a) dng ti; (b) dng zener v dng ti;
(c) thay i in tr ti v in p ra; (d) thay i in p ra v in p vo.
52. n nh theo ti c xc nh bng
(a) cc thay i dng ti v in p vo; (b) cc thay i dng ti v in p ra;
(c) cc thay i in tr ti v in p vo;(d) cc thay i dng zener v dng ti.
53. t in p sinusoidal 10 Vnh-nh vo mch diode silicon v in tr mc ni tip. Tr s in
p ln nht ngang qua diode l
(a) 9,3 V; (b) 5 V; (c) 0,7 V; (d) 4,3 V.
54. Trong mch xn c phn cc, in p phn cc l 5 V v in p vo l dng sin 10 V nh. Nu
cc tnh dng ca in p phn cc c ni vi cathode ca diode, th in p ti anode l
(a) 10 V; (b) 5 V; (c) 5,7 V; (d) 0,7 V.
55. Trong mch ghim p dng, in p t vo u vo l dng sin 120 V rms. Gi tr ca in p dc
u ra l
(a) 119,3 V; (b) 169 V; (c) 60 V; (d) 75,6 V.
-12-
56. in p u vo ca b nhn i in p l 120 V rms. Gi tr gn ng ca in p ra nh-nh
l
(a) 240 V; (b) 60 V; (c) 167 V; (d) 339 V.
57. Nu in p u vo ca b nhn ba in p c gi tr hiu dng l 12 V, Gi tr in p ra dc gn
ng l
(a) 36 V; (b) 50,9 V; (c) 33,9 V; (d) 32,4 V.
58. Khi mt diode silicon hot ng ng phn cc thun, DMM chc nng o th diode s ch
th
(a) 0 V; (b) OL; (c) xp x 0,7 V; (d) xp x 0,3 V.
59. Khi mt diode silicon b h mch, DMM thng thng s ch th
(a) 0 V; (b) OL; (c) xp x 0,7 V; (d) xp x 0,3 V.
60. Trong mt mch chnh lu, nu cun dy th cp ca bin p h mch, th in p ra l
(a) 0 V; (b) 120 V; (c) thp hn nh mc; (d) khng nh hng.
61. Nu mt trong cc diode trong mch chnh lu cu ton k b h mch, th in p ra l
(a) 0 V; (b) mt phn t bin ca in p vo;
(c) bng in p chnh lu bn k; (d) in p 120 Hz.
62. Khi kim tra mt mch chnh lu cu ton k 60 Hz cho thy tn hiu ra c gn 60 Hz,
(a) mch hot ng bnh thng; (b) c mt diode b h mch;
(c) cun th cp ca bin p b ngn mch; (d) t lc b r.
63. Khi t voltmeter ngang qua diode c phn cc thun, th voltmeter s ch th mc in p xp
x bng vi
(a) mc in p ca ngun pin phn cc; (b) 0V;
(c) th ro ca diode; (d) in p ca ton b mch.
64. Mt diode silicon mc ni tip vi in tr 1,0kO v mt ngun pin 5V. Nu anode c mc
vi cc dng ca ngun pin, in p cathode so vi u m ca ngun pin l
(a) 0,7V; (b) 0,3V; (c) 5,7V; (d) 4,3V.
65. u que o dng ca ng h o in tr [ohmmeter] c kt ni vi anode ca diode cn u
que m l kt ni vi cathode. Diode l
(a) c phn cc ngc; (b) h mch; (c); c phn cc thun
(d) b hng; (e) gm c (b) v (d).
66. Cathode ca diode zener mc trong b n nh in p thng l
(a) dng hn so vi anode; (b) m hn so vi anode;
(c) mc in p + 0,7V; (d) c ni t.
-13-
67. Nu mt diode zener c in p zener l 3,6V th diode zener s lm vic
(a) vng nh thng c n inh; (b) vng nh thng zener;
(c) vng dn thun; (d) vng nh thng thc.
68. Mt diode zener 12V, thay i dng zener 10mA s to ra thay i in p zener l
0,1V. Tr khng ca zener tng ng vi khong dng trn l
(a) 1O; (b) 100O; (c) 10O; (d) 0,1O.
69. S liu ca mt diode zener cho l V
Z
= 10V o ti mc dng I
ZT
= 500mA. Z
Z
tng ng l
(a) 50O; (b) 20O; (c) 10O; (d) cha bit.
70. Trng thi khng-ti c ngha l
(a) ti c in tr v cng; (b) ti c in tr bng khng;
(c) cc u ra l h mch; (d) gm c (a) v (c).
71. Diode bin dung biu hin
(a) in dung c th thay i ty thuc vo in p ngc;
(b) in tr c th thay i ty thuc vo in p ngc;
(c) in dung c th thay i ty thuc vo in p thun;
(d) in dung khng i trong khong in p ngc.
72. Diode pht quang - LED
(a) s pht sng khi c phn cc ngc; (b) s nhy cm vi nh sng khi phn cc ngc;
(c) s pht sng khi c phn cc thun; (d) hot ng nh mt bin tr.
73. LED hng ngoi so vi LED thy c l
(a) to ra nh sng c bc sng ngn hn; (b) to ra nh sng tt c cc bc sng;
(c) to ra ch mt mu ca nh sng; (d) to ra nh sng c bc sng di hn.
74. So vi cc n si t, LED cng sng-cao l
(a) sng hn; (b) bn hn; (c) s dng ngun thp hn;(d) tt c cc c tnh trn.
75. OLED khc vi LED thng thng c tnh l OLED
(a) khng cn in p phn cc; (b) c cc lp vt liu hu c thay cho tip gip pn;
(c) c th thc hin c khi s dng qu trnh in phun; (d) c (b) v (c).
76. LED hng ngoi c ghp quang vi photodiode. Khi LED tt, th ch th trn ng h o dng
mc ni tip vi photodiode c phn cc-ngc s l
(a) khng thay i; (b) gim xung; (c) tng ln; (d) dao ng .
77. in tr ni ca quang diode - photodiode
(a) s tng ln theo cng nh sng khi c phn cc-ngc;
(b) s gim xung theo cng nh sng khi c phn cc-ngc;
(c) s tng ln theo cng nh sng khi c phn cc-thun;
(d) s gim xung theo cng nh sng khi c phn cc-thun.
-14-
78. Diode laser s to ra
(a) nh sng khng kt hp; (b) nh sng kt hp;
(c) nh sng n sc; (d) c (b) v (c).
79. Diode c c tnh in tr m l
(a) diode Schottky; (b) diode tunnel; (c) diode laser; (d) diode ht ti nng [hot-carrier diode].
80. cho mt h thng hot ng ng chc nng, th cc loi mch khc nhau to nn h thng
cn phi
(a) c phn cc ng; (b) c kt ni ng; (c) c giao tip ng;
(d) tt c cc phng n trn; (e) gm c (a) v (b).
-15-
BI TP
BI TP C BN
Mc 1-1 Cu trc nguyn t
1. Nu s nguyn t ca mt nguyn t trung ha l 6, th c bao nhiu in t c trong nguyn t?
proton l bao nhiu?.
2. S lng in t ln nht l bao nhiu c th c lp th 3 ca mt nguyn t?
Mc 1-2 Vt liu s dng trong cu kin in t
3. Vi mi gin nng lng hnh 1.40, hy xc nh loi vt liu da trn cc so snh tng
i.
4. Mt nguyn t c 4 in t ha tr. Kiu nguyn t l thuc loi vt liu no?
5. Trong tinh th silicon, mu nguyn t n thc hin bao nhiu lin kt ng ha tr?
Mc 1-3 Dng in trong cc cht bn dn
6. iu g xy ra khi gia tng nhit vo silicon?
7. Tn gi hai vng nng lng m trong dng in s c to ra trong cht bn dn?
Mc 1-4 Cc cht bn dn tp dng-N v dng-P
8. Hy m t qu trnh pha tp v gii thch qu trnh pha tp bin i cu trc nguyn t ca silicon
nh th no?
-16-
9. Nguyn t antimony c bao nhiu in t ha tr, c th s dng lm g trong ch to cht bn
dn? Nguyn t boron c bao nhiu in t ha tr, c th s dng lm g trong ch to cht
bn dn?
Mc 1-5 Tip gip PN
10. in trng tip gip pn c to ra nh th no?
11. Do c th chn [barrier potential], diode c th c dng lm ngun in p c khng? Gii
thch.
Mc 1-6 Hot ng ca diode
12. diode c phn cc thun, cn phi mc u dng ca ngun in p n vng bn dn no
ca tip gip?
13. Hy gii thch ti sao cn phi c in tr mc ni tip khi diode c phn cc thun.
Mc 1-7 c tuyn Dng-Ap ca diode
14. Gii thch cch to ra phn c tuyn phn cc thun ca diode nh th no?
15. Bng cch no c th lm cho ro th gim t 0,7V xung 0,6V?
Mc 1-8 Cc m hnh ca diode
16. Hy xc nh mi diode mch hnh 1.41, l c phn cc thun hay phn cc ngc.
17. Hy xc nh in p trn mi diode mch hnh 1.41, theo m hnh thc t ca diode.
-17-
18. Hy xc nh in p trn mi diode mch hnh 1.41, bng m hnh diode l tng
19. Hy xc nh in p trn mi diode mch hnh 1.41, s dng m hnh diode y c
10
d
r' = v 100 M
R
r' = .
Mc 1-10 Chnh lu bn k
20. Hy v dng sng v ghi tr s ca in p ra cho mi mch hnh 2.68.
21. in p ngc nh trn mi diode hnh 2.68 l bao nhiu?.
22. Tnh gi tr trung bnh ca in p ca in p c chnh lu bn k vi gi tr in p nh l
200 V.
23. Tnh gi tr trung bnh ca in p ca in p c chnh lu bn k c gi tr in p nh l
200 V.
24. Gi tr dng thun nh chy qua mi diode mch hnh 2.68, l bao nhiu?
25. Bin p ngun cung cp c t s vng dy l 5:1. in p th cp l bao nhiu nu cun dy s
cp c ni vi ngun 120 V rms?
26. Xc nh mc cng
sut nh v trung
bnh c phn b
n R
L
mch hnh
2.69.
-18-
Mc 1-11 Mch chnh lu ton k
27. Tnh tr trung bnh cho mi in p ghi hnh 2.70.
28. Xt mch hnh 2.71.
(a) Kiu mch ny l mch g?
(b) in p nh th cp ton b l bao nhiu?
(c) Tnh in p nh trn mi na cun dy th cp.
(d) V dng sng in p trn R
L
.
(e) Mc dng nh chy qua mi diode l bao nhiu?
(f) PIV ca mi diode trong mch l bao nhiu?
29. Tnh in p nh trn mi na ca bin p im
gia cun dy c dng trong b chnh lu ton
k c mc in p ra trung bnh l 120V.
30. Hy trnh by cch mc cc diode b chnh lu
im gia nh th no to ra in p ton k m
trn in tr ti.
31. Thng s PIV cn phi c l bao nhiu cc diode trong mch chnh lu cu to ra mc in p
ra trung bnh l 50V?
32. in p ra ca mch chnh lu cu l 20V. Mc in p ngc nh trn cc diode l bao nhiu?
33. V dng sng in p ra ca mch chnh lu cu hnh 2.72. Lu l ton b diode c o
ngc so vi cc mch trc y.
-19-
Mc 1-12 Mch lc ngun cung cp v n nh in p
34. Mch lc ca b chnh lu cung cp in p ra dc l 75V vi in p gn nh-nh l 0,5V. Tnh
h s gn.
35. Mch chnh lu ton k c mc in p ra nh l 30V. B lc u vo bng t 50 F s c
mc vi b chnh lu. Tnh mc gn nh-nh v mc in p ra dc trn in tr ti 600O.
36. Mc gn theo phn trm ca mch lc chnh
lu bi tp 35 l bao nhiu?
37. Tr s ca t lc cn phi c l bao nhiu cho h s gn 1% ca b chnh lu ton k c in
tr ti l 1,5kO? Cho bit b chnh lu cung cp mc in p ra nh l 18V.
38. Mch chnh lu ton k c mc in p chnh lu nh l 80V t ngun ac 60Hz. S dng t lc
10F, xc nh h s gn vi in tr ti l 10kO.
39. Tnh mc gn nh-nh v mc in p ra dc
mch hnh 2.73. Bin p c thng s in p
th cp l 36 V rms, v in p ngun in c
tn s 60Hz.
40. Xt mch hnh 2.73, v v dng sng in p
theo quan h vi in p vo: V
AB
, V
AD
, v
V
CD
.
41. Nu in p ra khng ti ca b n nh in
p l 15,5V v in p ra y ti l 14,9V, th
n nh ti theo phn trm l bao nhiu?
42. Cho b n nh in p c n nh ti theo
phn trm l 0,5%. Mc in p ra y ti l
bao nhiu nu mc in p ra khng ti l
12,0V?.
-20-
Mc 1-13 Cc mch hn ch v mch ghim bng diode
43. Hy xc nh dng sng ra cho mch
hnh 2.74.
44. Hy xc nh in p ra cho mch
hnh 2.75(a) tng ng vi mi in
p vo hnh 2.75(b), (c), v (d).
45. Hy xc nh dng sng ca in p ra cho mch hnh 2.76.
-21-
46. Hy xc nh dng sng ca
in p trn ti R
L
cho mi
mch hnh 2.77.
47. Hy v dng sng ca in p ra cho mi mch hnh 2.78.
48. Hy xc nh dng sng ca in p ra cho mi mch hnh 2.79.
-22-
49. Hy xc nh dng sng ca in p ra cho mi mch hnh 2.80. Cho bit hng s thi gian RC
l ln hn nhiu so vi chu k ca tn hiu vo.
50. Lp li bi tp 49 vi cc diode c mc xoay ngc chiu.
Mc 1-14 Mch nhn p
51. Mt mch bi p c in p u
vo l 20 Vrms. Mc in p u
ra l bao nhiu? Hy v mch, ch
th ti cc u ra v thng s PIV
ca diode.
52. Lp li bi tp 51 cho b nhn 3
in p v b nhn 4 in p.
Mc 1-15 Thng s ca diode
53. T trang s liu hnh 2.55, hy xc nh in p ngc nh l bao nhiu m diode 1N183A c
th chu ng c.
-23-
54. Lp li nh bi tp 53 cho diode 1N188A.
55. Nu in p ra nh ca mch chnh lu cu ton k l 50V, xc nh tr s nh nht ca in tr
hn ch xung gn cn thit khi s dng diode 1N183A.
Mc 1-16 Sai hng trong mch diode
56. Nu 1 trong s cc diode b chnh lu cu b h mch, th in p ra s nh th no?
-24-
57. T cc s ch th trn ng h o mch hnh 2.81, hy xc nh xem b chnh lu ang hot
ng bnh thng khng? Nu khng bnh thng, xc nh h hng c th d xy ra nht.
58. Hnh 2.82, l th hin dng sng in p ra ca cc mch chnh lu khc nhau hin th trn my
hin sng. Theo mi trng hp, hy xc nh mch chnh lu c hot ng ng chc nng
khng v nu khng ng chc nng th hy xc nh h hng c th d xy ra nht.
59. Cn c vo cc gi tr (ghi
trong mch)ca cu kin
cho, mch hnh 2.83 c th
h hng khng? Nu nh vy
th ti sao?
-25-
60. Xem cc s ch th trn ng h o trong mi mch hnh 1.42, v xc nh diode no ng chc
nng, hay diode no h mch hoc b ngn mch. Gi s m hnh l tng.
61. Hy xc nh in p so vi
t ti tng im o trong
mch hnh 1.43. Gi s m
hnh diode thc t.
62. Hy xc nh sai hng c th d xy ra nht trong bng mch hnh 2.84 theo mi hin trng
di y. Trng thi hot ng lin quan cn phi ly theo tng trng hp. Bin p c mc in
p ra nh mc l 36V.
(a) Khng o c in p t im o 1 i vi im o 2.
(b) Khng c in p t im 3 i vi im o 4, 110V rms o gia im o 1 v im o 2.
(c) 50V t im o 3 i vi im o
4. in p vo ng mc 110V
rms.
(d) 25V t im o 3 i vi im
o 4. in p vo ng mc
110V rms.
(e) in p chnh lu ton k c mc
nh khong 50V ti im o 7 so vi t.
(f) in p gn 120Hz cao ti im o 7.
(g) in p gn c tn s 60Hz ti im o 7.
(h) Khng c in p ti im o 7.
-26-
63. Khi o th bng mch ngun cung cp hnh 2.84 c mc in tr ti 10kO, o in p ti u
dng ca t lc c in p gn 60Hz. Thay ton b diode, cm phch in ngun vo bng
mch, v o li im o kim chng hot ng c ng khng v thy rng in p o vn c
in p gn 60Hz. Sai hng lc ny l g?
64. Nu diode pha trn cng bng mch hnh 2.84, lp sai b o ngc, th in p c th o
c ti im o 8 l bao nhiu?
65. Mt mch chnh lu ton k c t lc cung cp in p ra dc l 35V cho ti 3,3kO. Hy xc nh
tr s nh nht ca t lc nu mc in p gn nh-nh yu cu l 0,5V.
66. Mt mch chnh lu ton k cha lc vi mc in p vo l 220V; 50Hz cung cp in p ra c
mc nh l 15V. Khi mc mch lc u vo bng t v ti l 1kO, in p ra dc l 14V. Mc
in p gn nh-nh l bao nhiu?
67. Vi mt b chnh lu ton k, dng xung o c b lc bng t l 50A. Bin p c thng s
in p th cp l 24V vi in p vo l 120V; 60Hz. Hy tnh tr s ca in tr xung gn cn
trong mch ny.
68. Thit k b chnh lu ton k s dng bin p im gia 18V. gn u ra khng vt qu
5% bin in p ra, vi in tr ti l 680O. Ch r cc thng s nh mc I
o
v PIV ca cc
diode v chn diode thch hp t hnh 2.55.
69. Thit k b ngun cung cp c lc c th cho cc mc in p ra l + 9V 10% v - 9V 10%
vi mc dng ti ln nht l 100mA. Hai mc in p phi c chn bng chuyn mch thit
lp hai u ra. in p gn cn phi khng vt qu 0,25V rms.
-27-
70. Thit k mch xn in p sin 20V rms thnh in p xung c bin dng ln nht l 18V
v bin m ln nht l 10V s dng ngun in p dc n 24V.
71. Hy xc nh mc in p trn mi t trong mch hnh 2.85.
Mc 1-17 Diode n p
72. Mt diode zener c V
Z
= 7,5V v Z
Z
= 5O ti mc
dng o. V mch tng ng ca zener.
73. T c tuyn hnh 3.58, dng zener nh nht (I
ZK
),
in p zener ti mc I
ZK
gn ng l bao nhiu?
74. Khi dng ngc trong mt diode zener tng ln t
20mA n 30mA, th in p zener s thay i t
5,6V n 5,65V. Tr khng ca zener l bao nhiu?
75. Mt diode zener c tr khng l 15O. in p u cc ca zener l bao nhiu ti mc dng 50mA
nu V
Z
= 4,7V ti mc dng I
Z
= 25mA?
76. Mt diode zener c cc thng s sau: V
Z
= 6,8V ti 25C v h s nhit TC = + 0,04% / C.
Hy xc nh in p zener ti 70C.
Mc 1-18 Cc ng dng ca diode n p
77. Xc nh mc in p vo thp nht cn thit c s n nh cho mch c
thit lp nh hnh 3.59. Gi thit diode zener l tng c I
ZK
= 1,5mA v V
Z
= 14V.
-28-
78. Lp li nh bi tp 77, vi Z
Z
= 20O v V
Z
= 14V ti mc dng 30mA.
79. Cn phi iu chnh R trong mch hnh 3.60, n gi tr no to ra I
Z
= 40mA? Cho V
Z
=
12V ti mc dng 30mA v Z
Z
= 30O.
80. t in p sin 20V nh vo
mch hnh 3.60, thay
cho ngun dc. V dng sng
ra. S dng gi tr ca cc
thng s cho bi tp 79.
81. B n nh bng zener c ti
nh hnh 3.61. V
Z
= 5,1V
ti I
Z
= 49mA; I
ZK
= 1mA; Z
Z
= 7 O, v I
ZM
= 70mA. Xc
nh cc mc dng ti cho
php ln nht v nh nht.
82. Tnh n nh ti theo phn trm cho bi tp 81.
[
NL FL
FL
Load regulation = 100%
V V
V
| |
|
\ .
]
83. Phn tch mch hnh 3.61, c n nh ngun
tnh theo phn trm khi s dng in p vo t 6V
n 12V khng ti.
[
OUT
IN
Line regulation 100%
V
V
| | A
=
|
A
\ .
]
84. Mch n nh bng zener c in p ra khng ti, V
NL
= 8,23V, v in p ra y ti V
FL
= 7,98V.
Tnh n nh ti tnh theo phn trm. [
NL FL
FL
Load regulation = 100%
V V
V
| |
|
\ .
]
85. b n nh bng zener, khong thay i ca in p ra l 0,2V khi in p vo t 5V n 10V.
n nh ngun theo phn trm l bao nhiu? [
OUT
IN
Line regulation 100%
V
V
| | A
=
|
A
\ .
]
86. in p ra ca b n nh bng zener l 3,6V khi khng ti v 3,4V khi y ti. Tnh n nh
ti theo phn trm. [
NL FL
FL
Load regulation = 100%
V V
V
| |
|
\ .
]
-29-
Mc 1-19 Diode bin dung - VARACTOR
87. Hnh 3.62, l c tuyn in p ngc theo in dung ca
mt varactor. Hy xc nh thay i theo in dung nu
V
R
thay i t 5V n 20V.
88. Hy xt c tuyn hnh 3.62, v xc nh gi tr ca V
R
c
in dung 25pF.
89. Gi tr in dung cn thit cho mi varactor mch hnh 3.63, l bao nhiu to ra tn s cng
hng l 1MHz?
90. Ti gi tr no cn phi c in p V
R
cho bi tp
89 nu varactor c c tuyn nh hnh 3.62?
Mc 1-20 Diode pht quang - LED
91. LED hnh 3.64(a) c c tuyn pht quang
nh hnh 3.64(b). B qua st p thun ca
LED, hy xc nh mc cng sut pht x
(nh sng) c to ra theo mW.
92. Hy xc nh cch mc b hin th
by on hnh 3.65, hin th s
5. Dng thun lin tc ln nht
cho mi LED l 30mA v s dng
ngun cung cp l + 5V.
93. Lp rp mng n-giao thng vi LED mu vng bng cch dng
s lng ti thiu cc in tr hn dng lm vic t ngun cung
cp l 24 V v bao gm 100 LED c
F
30 mA I = v s lng cc
LED bng nhau trong mi nhnh song song. Hy th hin mch v
gi tr cc in tr.
94. Vi mt photodiode ti mc chiu sng cho, in tr ngc l
200kO v in p ngc l 10V. Dng chy qua photodiode l bao
nhiu?
-30-
95. in tr ca mi photodiode
hnh 3.66, l bao nhiu?
96. Khi ng chuyn
mch hnh 3.67,
microammeter ch
th tng hay gim?
Gi s D
1
v D
2
c ghp quang.
Mc 1-21 Cc loi diode khc
97. c tuyn V-I ca mt diode tunnel cho thy l dng in thay i t 0,25mA n 0,15mA khi
in p thay i t 125mV n 200mV. in tr l bao nhiu?
98. Kiu mch no thng hay s dng diode tunnel?
99. Mc ch lm lch b mt no c trong s dng diode laser? Ti sao ch lm lch ring mt pha?
Mc 1-22 S c trong mch diode
100. i vi mi nhm cc mc in p o c ti cc im (1, 2, v 3) ghi hnh 3.68, xc nh
mch c hot ng ng chc nng hay khng, nhn dng cc h hng c th xy ra nht. Zener
c thng s 12V.
(a) V
1
= 110V rms; V
2
= 30V dc; V
3
= 12V dc.
(b) V
1
= 100V rms; V
2
= 30V dc; V
3
= 30V dc.
(c) V
1
= 0V; V
2
= 0V; V
3
= 0V dc.
(d) V
1
= 110V rms; V
2
= 30V nh ton k 120Hz; V
3
= 12V dc in p xung 120Hz..
(e) V
1
= 110V rms; V
2
= 9V; V
3
= 0V.
101. in p u ra ca mch hnh 3.68, l bao nhiu xt theo mi trng hp hng sau y?.
(a) D
5
h mch. (b) R h mch.
(c) C b r. (d) C h mch.
(e) D
3
h mch. (f) D
2
h mch
(g) T h mch. (h) F h mch.
-31-
102. Mt h thng tnh ton & iu khin
c lp t ti nh ca khch hng.
H thng ang c biu hin hot
ng chp chn nn cn phi kim
tra trc tin l bng mch ngun
cung cp & thu / pht hng ngoi.
Cn c vo hnh 3.69, hy xc nh
xem b ngun c vn sai hng
no khng.
103. Mt vn khc c h thng tnh ton & iu khin. Lc ny, h thng ngng hot ng hon
ton v bn li quyt nh kim tra trc tin bng mch ngun cung cp. Cn c vo thng tin
hnh 3.70, hy xc nh sai hng.
104. Lit k cc nguyn nhn c th c lm cho LED hnh 3.55 khng pht tia hng ngoi khi
ngun cung cp c ni vi ngun in li.
-32-
105. Lit k cc nguyn nhn c th c lm cho photodiode hnh 3.55, khng p ng vi tia hng
ngoi pht ra t LED. Nu cc bc theo trnh t c th c lp sai hng.
BI TP V THNG S CA DIODE
106. Tham kho trang s liu ca diode zener hnh 3.7.
(a) tiu tn cng sut dc ln nht ca diode 1N4738 ti 25C l bao nhiu?.
(b) Xc nh tiu tn cng sut ln nht ca diode 1N4751 ti 70C v 100C?.
(c) Mc dng nh nht ca 1N4738 cn cho s n nh l bao nhiu?.
(d) Mc dng ln nht ca 1N4750 ti 25C l bao nhiu?.
(e) Dng chy qua 1N4750 thay i t 25mA n 0,25mA.
Tr khng zener cn phi thay i nh th no?
-33-
(f) in p zener ln nht ca 1N4736 ti 50C l bao nhiu?
(g) in p zener nh nht ca 1N4747 ti 75C l bao nhiu?.
107. Tham kho trang s liu ca diode bin dung hnh 3.22.
(a) in p ngc ln nht ca diode 1N5139 l bao nhiu?.
(b) Xc nh tiu tn cng sut ln nht ca diode 1N5141 ti nhit mi trng l 60C?
(c) Xc nh tiu tn cng sut ln nht ca diode 1N5148 ti nhit v l 80C?.
(d) Ti mc in p ngc 20V in dung ca 1N5148 l bao nhiu?
(e) Nu ch ly theo tiu chun h s phm cht, th cn phi chn diode bin dung no?
(f) in dung in hnh ca 1N5142 l bao nhiu ti V
R
= 60V?
-34-
108. Tham kho trang s liu ca diode pht quang - LED hnh 3.31.
(a) C th t 9V theo chiu phn cc ngc ngang qua mt MLED81 c khng?
(b) Xc nh tr s nh nht ca in tr ni tip vi MLED81 khi s dng in p 5,1V phn
cc thun cho diode?
(c) Gi s mc dng thun l 50mA v st p thun l 1,5V lm vic nhit xung quang
45C. C vt qu thng s cng sut ln nht khng?.
(d) Xc nh cng bc x theo mc dng thun l 30mA.
(e) Cng bc x ti gc 20 tnh t trc l bao nhiu nu dng thun l 100mA?
-35-
109. Tham kho trang s liu ca photodiode hnh 3.36.
(a) Mt MRD82 c mc ni tip vi mt in tr 10kO v ngun in p phn cc ngc.
Khng chiu sng vo diode. St p trn in tr l bao nhiu?.
(b) Ti bc sng no s c mc dng ngc ln nht theo chiu sng cho?.
(c) Mc dng ti l bao nhiu ti nhit mi trng l 60C?.
(d) Ti bc sng no nhy ca MRD821 mc ln nht?.
(e) Nu nhy ln nht l 50A / mW / cm
2
, th nhy ti 900nm l bao nhiu?
(f) Tia hng ngoi vi bc sng l 900nm chiu vo MRD821 vi mc chiu sng l
3mW /cm
2
v gc chiu l 40 t trc ln nht. Xc nh mc dng ngc.
-36-
BI TP NNG CAO
110. Kho st s ca bng mch hnh 3.71, v xc
nh kiu mch l mch g?
111. Nu in p vo 110V rms; 60Hz c ni n cc
u vo ac, hy xc nh cc mc in p u ra
trn bng mch hnh 3.71.
112. Nu mi u ra ca bng mch hnh 3.71, c
mc ti c 1,0kO, thng s nh mc cn phi c
s dng l bao nhiu?
113. Hy thit k b n nh in p bng zener m bo cc thng s sau: in p u vo l 24V dc,
dng ti l 35mA, v in p trn ti l 8,2V.
BI TP B SUNG PHN DIODE
114. Mt diode silicon dn nhit 25C mc st p trn hai cc diode l 0,7V. Xc nh mc st
p V trn diode nu diode lm vic nhit +100
o
C v 100
o
C.
[p s:
o o
(100 C) = 0, 55 V; (- 100 C) = 0, 95 V V V
]
115. Mch hnh 1.31, dng chnh lu sng sin c 100V
rms
v tn s 60Hz. Mc in p ra nh nht khng th gim
di 70V v t s bin p l 1:2. in tr ti l 2kO.
Tnh in dung cn thit ca t lc mc song song vi R
L
.
[p s: 8, 25 F ]
-37-
116. in p ra ca b chnh lu bn k vo khong 50V, tn s 60Hz. Gi s tr thun ca diode
bng 0, ti thp nht c th mc vo mch khi s dng t khong 50F duy tr mc in p
gn nh nht trn 40V l bao nhiu?
[p s: 1, 67 kO]
117. Mch chnh lu ton k nh mch hnh 1.31, c bin p
vi t s vng dy l 5:1.
(a) Tnh tr s in dung ca t cn duy tr mc in
p nh nht khong 10V trn ti 100O.
[p s: 233 F ]
(b) Nu in p tn hiu vo phn ( a) thay i trong
khong t 110V n 120V
rms
, tn s 60Hz, th tr s
in dung cn thit l bao nhiu? [p s: 233 F ]
118. Mt mch n nh bng diode Zener (hnh 1.37) c in p u vo
thay i trong khong t 10V n 15V v mc dng ti thay i
trong khong t 100mA n 500mA.
(a) Tnh tr s ca R
i
v I
Zmax
, bit rng mch s dng diode zener
6V. [p s: 6,33 ; 1,32 A O ]
(b) Hy tnh cng sut nh mc cho diode zener v in tr vo
(R
i
). [p s: 7,92 W; 12,8 W]
(c) Hy tnh tr s ca t cn thit nu mc ngun l u ra ca
mch nn bn k vi tn hiu vo l 60Hz. [p s: 4731 F ]
-38-
119. V c tuyn I
D
theo V
D
cho mt diode
silicon nu dng bo ha ngc I
S
=
0,1A, s dng n = 1,5 i vi silicon.
Xc nh mc in p chuyn sang dn
ca diode.
120. V c tuyn I
D
theo V
D
cho mt diode germanium nu dng bo ha ngc I
S
= 0,01mA. Xc
nh mc in p chuyn sang dn cho diode (c tuyn c th v trn cng trc th nh c
tuyn ca bi tp 1.4).
121. Nu ti u ra ca mt mch nn bn k l 10kO, th tr s ca t cn phi c l bao nhiu
c mc in p ra khng thay i qu 5%? in p vo l 100V
rms
, 60Hz. Da vo hnh
P1.1. Suy ra dng sng ra.
[p s: = 33, 4 F C ]
122. Thit k mt b ngun cung cp theo kiu mch nn bn k nhn tn hiu vo l
120V
rms
, 60Hz v yu cu mc in p ra ln nht l 17V v thp nht l 12V. Ngun cung cp
s cung cp in p ngun cho mch in t cn mc dng khng i l 1A. Hy xc nh cu
hnh mch, t s vng dy ca bin p, tr s ca t. Gi s cc diode v bin p l l tng.
-39-
123. Nu ti u ra ca mch nn ton k l 10kO, tr s
ca t l bao nhiu cn thit duy tr mc in p
ra khng thay i thp nhiu so vi 10% ? Tn hiu
vo l 110V
rms
, 60Hz. Da vo hnh P1.3. V dng
sng ra.
124. Lp li bi tp 1.10, vi kiu ngun cung cp l mch chnh lu ton k.
[p s: 5; 12 ; 2, 36 mF
L
a= R = O ]
125. Hy xc nh thng s ca t trong mch hnh 1.31, khi a
= 6 v R
L
= 50O. Mc in p nh nht n ti cn phi c
mc suy gim khng qu 20%.
127. Nu mt diode zener c mc trong mch nh hnh P1.6, tr s in
tr R
i
l bao nhiu duy tr in p trn ti mc 10V (V
Z
) khi dng ti
thay i t 50mA n 500mA v in p vo thay i t 15V n 20V ?
Hy xc nh mc cng sut nh mc cn thit cho in tr v diode
zener.
-40-
128. Mch n nh bng zener nh hnh P1.6, s dng diode zener 20V
duy tr in p khng i 20V trn in tr ti R
L
. Nu in p vo
thay i t 32V n 43V v dng ti bin thin t 200mA n 400mA,
hy tnh chn tr s ca R
i
gi in p khng i trn ti. Xc nh
cng sut nh mc cn thit cho in tr v diode zener.
129. Mch n nh zener nh hnh P1.7, s dng diode zener 9V gi mc
in p khng i 9V trn ti, vi in p vo thay i t 18V n 25V
v dng ra thay i t 400mA n 800mA. Gi s R
Z
= 0.
(a) Chn tr s cn thit cho R
i
v xc nh mc cng sut yu cu nh
nht ca in tr vo.
(b) Xc nh mc cng sut nh mc ca diode zener.
(c) Tnh bin thin ca in p ra nh nh nu R
Z
= 1O.
[p s: 9, 76
i
R = O]
130. Gi s khng c tn hao trong cc diode nn ca
mch nn ton k (hnh P1.8) vi n = 2, tr s ca
R
i
cn thit l bao nhiu duy tr V
L
mc
16V vi dng ti l 500mA, s dng zener 16V?
V
S
thay i trong khong t 110Vrms n 120V
rms
,
60Hz. Gi s R
Z
= 0. Mc in p mch n nh
cn phi khng c gim nhiu hn 8V trn mc
V
Z
.
-41-
131. Gi s khng c st p cc diode chnh lu trong
mch hnh P1.8, v n = 2, tr s ca R
i
cn thit l
bao nhiu duy tr V
L
= 16V vi mc dng ti
khong 500mA? in p vo ca bin p l
110Vrms n 120Vrms, 60Hz. in p ra ca
mch nn c lc khng th thay i nhiu
hn 5V. Hy xc nh cng sut nh mc cn
thit cho in tr v diode zener.
132. Thit k b ngun n p ton k s dng bin p im gia 4:1 v diode zener 8V, 1W cung
cp 8V khng i cho ti thay i t 200O n 500O. in p vo ca bin p l 120Vrms,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
(a) I
Zmax
v I
zmin
; (b) R
i
v V
smin
; (c) tr s t cn thit; (d) n nh theo % khi R
Z
= 2 O.
[p s:
max min
125 mA; 93, 7 ; = 12,9 V; 141 F;% Reg 2,81%
Z i s
I = R = V C= = O ]
-42-
133. Thit k b ngun n p ton k s dng bin p im gia 5:1 v diode zener 8V, 2W cung
cp 8V khng i cho ti thay i t 100O n 500O. in p vo ca bin p l 120V
rms
,
60Hz. B qua tn hao trong bin p v cc diode. Xc nh:
(a) I
Zmax
v I
Zmin
. (b) R
i
v V
Smin
. (c) tr s t cn thit.
(d) n nh theo % khi R
Z
= 2 O. (e) Cng sut nh mc ca R
i
.
134. S dng cc gi tr ca in p vo i vi R
i
ca
bi tp 1.18, nhng dng zener 12V, tr s ca R
i
cn phi c l bao nhiu duy tr 12V u ra
nu ti thay i t 20mA n 600mA? Thng s
ca t cn phi c l bao nhiu?
-43-
135. S dng mch hnh P1.8, v gi s khng c tn
hao cc diode nn, tr s ca R
i
l bao nhiu
duy tr 12V trn ti bng cch s dng diode zener
12V, khi V
S
t 105V
rms
n 120V
rms
, 60Hz? in
p ra ca mch nn gim 20% do thng s ca t
C
1
, v ti thay i t 50mA n 500mA. Thng s
ca t l bao nhiu? Cho n = 2.
-44-
TM TT NI DUNG TRANSISTOR HIU NG TRNG
JFETs
Tip gip pn cng-ngun cn phi c phn cc-ngc.
GS
V iu khin
D
I .
Gi tr ca
DS
V m ti
D
I tr nn khng i
(bo ha) c gi l in p tht knh (
DSP
V ) .
Gi tr ca
GS
V m ti
D
I tr nn bng 0 c
gi l in p ngt knh (
GS(off )
V ) .
DSS
I l gi tr dng mng khi
GS
0 V = .
c tuyn truyn t:
2
GS
D DSS
GS(off )
1
V
I I
V
| |
~
|
|
\ .
h dn-thun:
GS
0
GS(off )
1
m m
V
g g
V
| |
=
|
|
\ .
, trong :
DSS
GS(off )
2
m0
I
g
V
=
E-MOSFETs
Ch lm vic ch tng cng
GS
V cn phi ln hn
GS(th)
V .
Ch tng cng:
MOSFET tng cng knh n:
GS
V dng
MOSFET tng cng knh p:
GS
V m
GS
V iu khin
D
I .
Gi tr ca
GS
V m ti
D
I bt u tng c gi l
in p ngng (
GS(th)
V ) .
c tuyn truyn t:
( )
2
D GS GS(th)
2
k
I V V =
H s k c th tnh theo phng trnh trn bng cch thay th cc gi tr ca
D
I v
GS
V tng
ng vi
D(on)
I c quy nh theo
GS
V .
D-MOSFETs
C th lm vic c ch ngho hoc ch tng cng.
GS
V c th c phn cc ti
GS
0 V =
Ch ngho:
MOSFET ngho knh n:
GS
V m
MOSFET ngho knh p:
GS
V dng
Ch tng cng:
MOSFET tng cng knh n:
GS
V dng
MOSFET tng cng knh p:
GS
V m
GS
V iu khin
D
I .
Gi tr ca
GS
V m ti
D
I tr nn bng 0 c gi l
in p ngt (
GS(off )
V ) .
c tuyn truyn t:
( )
2
D GS GS(th)
2
k
I V V =
-45-
IGBT
c iu khin bng in p nh MOSFET.
H c tuyn ra ging nh BJT.
C ba in cc: cng, collector, emitter.
PHN CC CHO FET (Cc tnh in p v chiu dng in l o ngc i vi FET knh p)
2-1. Transistor hiu ng trng l cu kin n ht ti (ch mt loi ht ti in).
Cc in cc ca FET l in cc ngun [Source], cc mng [Drain], v cc cng [Gate].
JFET lm vic vi tip gip pn (cng-ngun) phi c phn cc-ngc.
in tr vo cao ca JFET l do tip gip pn (cng-ngun) c phn cc-ngc.
Phn cc ngc JFET s lm cho vng ngho tng trong phm vi knh dn, do vy lm tng
in tr knh dn.
2-2. i vi JFET knh-n,
GS
V c th thay i t 0, m cho n in p ngng dn,
GS(off )
V . i vi
JFET knh-p,
GS
V c th thay i t 0, dng cho n in p ngng dn,
GS(off )
V .
DSS
I l dng mng hng khi
GS
0 V = . iu ny l ng cho c JFET v D-MOSFET .
FET c gi l cu kin theo lut-bnh phng do quan h gia
D
I theo bnh phng ca
biu thc gm c
GS
V .
2-3. Phn cc im gia ca mt JFET l
D DSS
2 I I = , nhn c bng cch thit lp
GS GS(off )
3, 4 V V ~
im-Q mch JFET phn cc phn-p l n nh hn so vi mch JFET t-phn cc.
Phn cc ngun dng-hng s tng cng n nh ca mch JFET t-phn cc.
2-4. JFET s dng nh mt bin tr khi c phn cc lm vic vng thun tr [ohmic].
in p cng s iu khin
DS
R vng thun tr.
Khi JFET c phn cc ti gc h trc ta (
GS
0 V = ,
D
0 I = ), in tr knh dn ac s c
iu khin bi in p cng.
2-5. MOSFET khc vi JFET c im l cng ca MOSFET c cch ly khi knh bng mt
lp SiO
2
, khc vi cng v knh JFET c cch ly bi mt tip gip pn.
MOSFET ngho (D-MOSFET) c th hot ng vi in p cng-ngun bng 0, dng, hoc
m.
D-MOSFET c knh vt l gia mng v ngun.
i vi D-MOSFET, cc gi tr m ca
GS
V s to ra ch ngho v gi tr dng ca
GS
V s
to ra ch tng cng.
MOSFET tng cng khng c knh vt l.
Khc vi JFET v D-MOSFET, E-MOSFET khng hot ng vi
GS
0 V = .
-46-
Knh dn c cm ng E-MOSFET bng cch t in p
GS
V ln hn so vi gi tr in
p ngng,
GS(th)
V .
2-6. E-MOSFET khng c thng s
DSS
I . Nu c th gi tr rt nh (l tng l bng 0).
E-MOSFET knh-n c
GS(th)
V dng. E-MOSFET knh-p c
GS(th)
V m.
c tuyn truyn t ca D-MOSFET giao ct vi trc dc
D
I .
c tuyn truyn t ca E-MOSFET khng giao ct vi trc dc
D
I .
Tt c cc cu kin MOS u d b hng do tnh in (ESD).
2-7. Phn cc im gia cho D-MOSFET l
D DSS
I I = c c bng cch thit lp
GS
0 V = .
D-MOSFET c cng c phn cc 0 do c in tr ln so vi t.
E-MOSFET cn phi c
GS
V ln hn so vi gi tr ngng.
2-8. BJT c cng cch ly (IGBT) l kt hp cc c tnh u vo ca MOSFET vi cc c tnh
u ra ca BJT.
IGBT c ba in cc: emitter, cng, v collector.
IGBT c s dng trong cc ng dng chuyn mch in p-cao.
2-9. H mch cng kh pht hin mch D-MOSFET phn cc-0 do in p cng thng mc
0 V, tuy nhin c th xut hin in p thay i.
H mch cng d pht hin mch E-MOSFET bi v in p cng thng khc vi 0 V.
2-10. in dn,
m
g , ca FET lin quan vi dng ra,
D
I , vi in p u vo,
gs
V .
H s khuych i in p ca mch khuych i ngun-chung (CS) c xc nh ch yu
bi in dn,
m
g , v in tr mng,
d
R .
in tr ni mng-ngun,
ds
r' ca FET s nh hng n h s khuych i (s lm gim h
s khuych i) nu n khng ln hn nhiu so vi
d
R c th b qua.
in tr gia cc ngun vi t (
s
R )khng c r mch bng t s lm gim h s khuych
i in p ca b khuych i bng FET.
in tr ti c mc n cc mng ca mch khuych i ngun-chung s lm gim h s
khuych i in p.
C s o pha 180 cc in p gia cng v mng.
in tr vo ti cng ca FET l rt cao.
2-11. H s khuych i ca mch khuych i mng-chung (CD) hay lp li-cc ngun (SF) lun
lun nh hn 1.
mch SF khng c s o pha tn hiu gia cng v ngun.
2-12. in tr vo ca mch khuych i cng-chung (CG) bng nghch o ca
m
g .
Mch khuych i cascode l kt hp mch khuych i CS v CG.
2-13. Mch khuych i lp D l mch khuych i phi tuyn bi v cc transistor hot ng nh
cc chuyn mch.
Mch khuych i lp D s dng iu ch bin -xung (PWM) biu din tn hiu vo.
B lc thng-thp s chuyn i tn hiu PWM tr li thnh tn hiu vo ban u.
Hiu sut ca b khuych i lp D s t n 100%.
2-14. MOS b (CMOS) c s dng trong cc mch chuyn mch s cng sut-thp.
CMOS s s dng mt MOSFET knh-n v mt MOSFET knh-p mc ni tip vi nhau.
B o, cng NAND, v cng NOR l cc v d ca mch logic s.
-47-
Cu hi v transistor hiu ng trng
1. JFET l . . .
(a) cu kin n ht ti; (b) cu kin iu khin bng in p;
(c) cu kin iu khin bng dng in; (d) gm c (a) v (c). (e) gm c (a) v (b).
2. Knh dn ca JFET l gia . . .
(a) cng v mng; (b) mng v ngun; (c) cng v ngun; (d) u vo v u ra
3. JFET lun lm vic vi
(a) phn cc ngc tip gip pn cng-ngun;(b) phn cc thun tip gip pn cng-ngun
(c) in cc mng c ni t; (d) in cc cng c ni vi cc ngun.
4. Vi V
GS
= 0V, dng mng s tr nn khng i khi V
DS
vt qu
(a) in p ngng dn; (b) V
DD
; (c) V
DSP
; (d) 0V
5. Vng dng-hng [constant-current] ca FET thuc trong khong gia
(a) vng ngng dn v bo ha; (b) vng ngt v in p tht knh;
(c) 0 v I
DSS
; (d) in p tht knh v in p nh thng.
6. I
DSS
l
(a) dng mng vi cc ngun b ngn mch;(b) dng mng ti vng ngt;
(c) dng mng c th c ln nht; (d) dng mng im gia.
7. Dng mng vng dng-hng s tng ln khi
(a) in p phn cc cng-ngun gim; (b) in p phn cc cng-ngun tng;
(c) in p phn cc mng-ngun tng; (d) in p phn cc mng-ngun gim.
8. Trong mt mch FET c V
GS
= 0V; V
DD
= 15V; I
DSS
= 15mA, v R
D
= 470O. Nu R
D
gim xung
bng 330O, th I
DSS
bng
(a) 19,5mA; (b) 10,5mA; (c) 15mA; (d) 1mA.
9. Ti vng ngt, knh dn ca JFET l
(a) mc rng nht ca knh; (b) b nghn hon ton bi vng ngho;
(c) rt hp; (d) c phn cc ngc.
10. Trang s liu ca JFET cho V
GSOFF
= - 4V. in p tht knh [pinch-off], V
DSP
,
(a) khng th xc nh c; (b) = - 4V; (c) ph thuc vo V
GS
;(d) = + 4V.
11. JFET cu hi 10
(a) l JFET knh n; (b) l JFET knh p; (c) c th l c hai loi.
-48-
12. Cho mt JFET c I
GSS
= 10nA o ti mc V
GS
= 10V. in tr vo l
(a) 100MO; (b) 1MO; (c) 1000MO; (d) 1000mO.
13. Mt JFET knh p, V
GSOFF
= 8V. Tr s ca V
GS
c phn cc im gia xp x bng
(a) 4V; (b) = 0V; (c) 1,25V; (d) = 2,34V.
14. MOSFET khc bit chnh vi JFET l do
(a) thng s cng sut; (b) MOSFET c hai cng;
(c) JFET c mt tip gip pn; (d) cc MOSFET khng c knh vt l.
15. in tr mng-ngun vng thun tr ph thuc vo
(a)
GS
V ; (b) cc tr s ca im-Q;
(c) dc ca c tuyn ti im-Q; (d) tt c cc phng n trn.
16. s dng c nh mt bin tr, JFET cn phi
(a) cu kin knh-n; (b) cu kin knh-p;
(c) c phn cc vng thun tr; (d) c phn cc vng bo ha.
17. Khi JFET c phn cc gc h trc ta , in tr knh ac s c xc nh bng
(a) gi tr ca im-Q; (b)
GS
V ;
(c) h dn; (d) c (b) v (c).
18. MOSFET khc bit chnh vi JFET l do
(a) thng s cng sut; (b) MOSFET c hai cng;
(c) JFET c mt tip gip pn; (d) cc MOSFET khng c knh vt l.
19. Mt D-MOSFET (MOSFET-ngho) s hot ng
(a) = 0A; (b) khng th xc nh c; (c) = I
DSS
;
20. Mt D-MOSFET knh-n vi V
GS
dng l ang lm vic
(a) ch ngho; (b) ch tng cng; (c) ngt [cutoff]; (d) bo ha.
21. Mt E-MOSFET (MOSFET kiu tng cng) knh-p c V
GS(th)
= - 2V. Nu
GS
0 V V = , th dng
mng l
(a) 0A; (b)
D(on)
I ; (c) ln nht; (d)
DSS
I .
22. mt E-MOSFET khng c dng mng cho n khi
GS
V
(a) t n
GS(th)
V ; (b) dng; (c) m; (d) = 0.
23. Tt c cc cu kin MOS u d b hng do
(a) qu nhit; (b) x in tch tnh; (c) qu p; (d) tt c cc l do trn .
-49-
24. Mt D-MOSFET (MOSFET-ngho) c phn cc mc V
GS
= 0V. Cc thng s trang s liu
ca cu kin l
DSS
20 mA I = v
GS(off )
= - 5 V V . Gi tr ca dng mng
(a) = 0A; (b) khng th xc nh c; (c) = 20 mA;
25. IGBT thng c s dng trong
(a) cc ng dng cng sut-thp; (b) cc ng dng tn s cao (rf);
(c) cc ng dng in p-cao; (d) cc ng dng dng-thp.
26. Trong mch khuych i ngun-chung (CS), in p ra l
(a) lch pha 180 so vi in p vo; (b) ng pha vi in p vo;(c) c ly trn cc ngun;
(d) c ly trn cc mng; (e) gm c (a) v (c); (f) gm c (a) v (d).
27. Trong mch khuych i ngun-chung (CS), V
ds
= 3,2V rms v V
gs
= 280mV rms. H s khuych
i in p bng
(a) 1; (b) 11,4; (c) 8,75; (d) 3,2
28. Trong mt mch khuych i CS, R
D
= 1kO; R
S
= 0,56kO; V
DD
= 10V, v g
m
= 4,5mS. Nu in
tr ngun c r mch hon ton, th h s khuych i s bng
(a) 450; (b) 45; (c) 4,5; (d) 2,52
29. Xt mt cch l tng, mch tng ng ca FET gm
(a) 1 ngun dng mc ni tip vi 1 in tr; (b) 1 in tr gia cc mng v cc ngun;
(c) 1 ngun dng gia cc cng v cc ngun; (d) 1 ngun dng gia cc mng v cc ngun
30. Gi tr ca ngun dng in cu hi 29 ph thuc vo
(a) in dn v in p cng-ngun; (b) in p ngun cung cp;
(c) in tr R
D
; (d) gm c (b) v (c).
31. Mt mch khuych i ngun-chung c h s khuych i in p bng 10. Nu tho t r mch
cc ngun,
(a) h s khuych i s tng; (b) h dn s tng;
(c) h s khuych i s gim; (d) im-Q s b dch chuyn.
32. Mt mch khuych i CS c in tr ti bng 10kO v R
D
= 0,8kO. Nu g
m
= 5mS v V
in
=
500mV, th in p tn hiu ra l
(a) 1,89V; (b) 2,05V; (c) 25V; (d) 0,5V.
33. Nu loi b in tr ti mch cho cu hi 32, th in p tn hiu ra l
(a) khng thay i; (b) gim; (c) tng; (d) bng 0.
34. Mt mch khuych i CD c R
S
= 1kO c in dn l 6mS, h s khuych i l
(a) 1; (b) 0,86; (c) 0,98; (d) 6.
-50-
35. Trang s liu ca transistor s dng trong mch khuych i mng-chung (CD) cho I
GSS
= 5nA ti
mc V
GS
= 10V. Nu in tr mc gia cng v t, R
G
= 50MO, in tr vo ton b xp x
bng
(a) 50MO; (b) 200MO; (c) 40MO; (d) 20,5MO.
36. Mch khuych i cng-chung (CG) khc vi c hai cu hnh CS v CD c im l mch c
(a) h s khuych i in p cao hn nhiu;(b) h s khuych i in p thp hn nhiu;
(c) in tr vo cao hn nhiu; (d) in tr vo thp hn nhiu.
37. Nu yu cu c hai h s khuych i in p v in tr vo cao, th cn phi s dng
(a) mch khuych i CS; (b) mch khuych i CD;
(c) mch khuych i CG;
38. Mch khuych i cascode bao gm
(a) mch khuych i CD v CS; (b) mch khuych i CS v CG;
(c) mch khuych i CG v CD; (d) hai mch khuych i CG.
39. Mch khuych i lp D tng t vi
(a) lp C; (b) lp B; (c) lp A; (d) ngoi cc trng hp trn.
40. Mch khuych i lp D s dng
(a) iu ch tn s; (b) iu ch bin ;
(c) iu ch rng-xung; (d) iu ch khng chu k.
41. E-MOSFET thng c dng cho cc ng dng chuyn mch l do . . . . . . . . ca chng
(a) c tnh ngng; (b) in tr vo cao;
(c) tuyn tnh; (d) h s khuych i cao.
42. Mch ly mu cn phi ly mu tn hiu ti mc thp nht ca
(a) mt khong thi gian trong chu k; (b) tn s tn hiu;
(c) hai ln tn s tn hiu; (d) cc chu k thay i.
43. Mch CMOS c bn s dng t hp ca
(a) cc MOSFET knh-n; (b) cc MOSFET knh-p;
(c) cc BJT pnp v npn; (d) mt MOSFET knh-n v mt MOSFET knh-p.
44. CMOS thng c s dng trong
(a) cc mch s; (b) cc mch tuyn tnh; (c) cc mch RF; (d) cc mch cng sut.
45. Nu c mt h mch bn trong gia cc mng v cc ngun mch khuych i CS, th in p
ti cc mng s bng vi
(a) 0V; (b)
DD
V ; (c)
GS
V ; (d)
GD
V .
-51-
BI TP
BI TP C BN
Mc 1-1 JFET
1.
GS
V ca mt JFET knh-p c tng ln t 1V n 3V.
(a) Vng ngho s hp hn hay rng hn?
(b) in tr knh tng hay gim?
2. Ti sao in p cng-ngun ca JFET knh-n cn phi lun lun bng 0 hoc l m?
3. V k hiu mch ca JFET knh-p v knh-n.
Ghi tn cc in cc.
4. Hy v cch mc in p phn cc gia cc
cng v cc ngun ca hai JFET mch
hnh 7.56.
Mc 2-2 H c tuyn v cc thng s ca JFET
5. Mt JFET c in p in p tht knh (
DSP
V ) l 5V. Khi
GS
0 V V = , th
DS
V l bao nhiu ti im
m dng mng tr nn khng i?
6. Mt JFET knh-n c phn cc mc
GS
- 2 V V = . Tr s ca
GS(off )
V l bao nhiu nu
DSP
V c
xc nh l 6V? Cu kin ang dn dn hay ngng dn?
7. Trang s liu ca mt JFET cho bit
GS(off )
- 8 V V = v
DSS
10 mA I = . Khi
GS
0 V V = , th
D
I l bao
nhiu i vi cc gi tr ca
DS
V ln hn in p tht?
DD
15 V V = .
8. Mt JFET knh-p c
GS(off )
6 V V = .
D
I l bao nhiu khi
GS
8 V V = ?
9. JFET mch hnh 7.57, c
GS(off )
- 4 V V = . Gi s rng tng in p
ngun cung cp
DD
V bt u ti mc 0 cho n khi ammeter t
n tr s n nh. Voltmeter s ch th gi tr tng ng l bao
nhiu?
-52-
10. Cc thng s sau t trang s liu ca
mt JFET:
GS(off )
- 8 V V = v
DSS
5 mA I = . Hy xc nh cc tr s
ca
D
I theo mi tr s ca
GS
V trong
khong t 0V n 8V theo cc mc
tng 1V. V c tuyn truyn t t
s liu trn.
11. Vi JFET bi tp 10, gi tr no ca
GS
V cn thit lp mc dng mng l 2,25mA?
12. Vi JFET, c g
m0
= 3200S. Gi tr ca g
m
l bao nhiu khi
GS
- 4 V V = , bit rng
GS(off )
- 8 V V = ?
13. Xc nh h dn thun ca JFET c phn cc mc
GS
- 2 V V = . Cc thng s t trang s
liu,
GS(off )
- 7 V V = v g
m
= 2000S o ti mc
GS
0 V = . Ngoi ra, hy xc nh dn np
truyn t thun, y
fs
.
14. Trang s liu ca mt JFET knh-p cho bit
GSS
5 nA I = ti mc
GS
10 V V = . Xc nh in tr
vo ca JFET.
15. V c tuyn truyn
t ca JFET c
DSS
8 mA I = v
GS(off )
- 5 V V = . S
dng t nht 4 im.
Mc 2-3 Phn cc cho JFET
16. Mt mch JFET knh-n t phn cc c mc dng mng l 12 mA v in tr mc ti cc ngun
l 100O. Gi tr ca
GS
0 V = tng ng l bao nhiu?
17. Hy xc nh tr s ca
S
R cn thit mch JFET t phn cc to ra
GS
- 4 V V = khi dng mng
D
5 mA I = .
18. Hy xc nh tr s ca
S
R cn thit mch JFET t phn cc to ra dng mng
D
2, 5 mA I = khi
GS
- 3 V V = .
-53-
19. Mt JFET c
DSS
20 mA I = v
GS(off )
- 6 V V = .
(a) Gi tr ca
D
I l bao nhiu khi
GS
0 V = ?
(b) Gi tr ca
D
I l bao nhiu khi
GS GS(off )
V V = ?
(c) Nu tng
GS
V t - 4V n
1V, th
D
I s tng ln hay
gim xung?
20. Hy xc nh
DS
V v
GS
V cho mi
mch hnh 7.58.
21. S dng c tuyn hnh 7.59, xc nh gi tr ca
S
R p
ng vi dng mng l 9,5mA.
22. Thit lp phn cc im gia cho JFET c
DSS
14 mA I = v
GS(off )
- 10 V V = . S dng ngun cung cp 24V. Hy v
mch v tnh cc tr s cc in tr. Cng nh cc tr s ca
D
I ,
GS
V , v
DS
V .
23. Hy xc nh in tr vo ton b cho mch hnh 7.60.
Cho
GSS
20 nA I = tng ng vi
GS
10 V V = .
24. Xc nh im-Q bng th ca
mch hnh 7.61(a) bng cch dng
c tuyn truyn t hnh 7.61(b).
-54-
25. Xc nh thng s im-Q cho mch
JFET knh-p nh hnh 7.62.
26. in p o gia mng v t trong mch
hnh 7.63 l 5V, hy xc nh thng s
im-Q ca mch.
27. Xc nh cc gi tr ca
in-Q ca mch JFET
phn cc phn p hnh
7.64.
Mc 2-4 Vng thun tr [ohmic]
28. Mt JFET c phn cc vng thun tr ti mc
DS
0,8 V V = v
D
0, 20 mA I = . Gi tr ca
in tr mng-ngun l bao nhiu?
29. im-Q ca mt JFET thay i t
DS
0, 4 V V = v
D
0,15 mA I = n
DS
0, 6 V V = v
D
0, 45 mA I = . Hy xc nh khong cc gi tr ca
DS
R .
30. Xc nh in dn ca JFET c phn cc ti gc ta bit rng
m0
1, 5 mS g = ;
GS
- 1 V V = ;
v
GS(off )
- 3, 5 V V = .
31. Xc nh in tr mng-ngun ac ca JFET cho bi tp 30.
-55-
Mc 2-5 MOSFET
32. V k hiu mch ca D-MOSFET v E-MOSFET knh-n v knh-p.
33. ch lm vic no D-MOSFET knh-n hot ng vi V
GS
dng.
34. Gii thch s khc nhau c bn gia D-MOSFET v E-MOSFET.
35. Gii thch ti sao c hai loi MOSFET u c in tr vo rt cao ti cng.
Mc 2-6 Cc thng s v h c tuyn ca MOSFET
36. Phiu s liu ca E-MOSFET cho bit l
D(on)
10 mA I =
ti mc
GS
- 12 V V = v
GS(th)
- 3 V V = . Tnh
D
I tng
ng vi
GS
- 6 V V = .
37. Tnh I
DSS
, cho bit l,
D
3 mA I = ;
GS
- 2 V V = , v
GS(th)
- 10 V V = .
38. Phiu s liu ca mt D-MOSFET cho bit
GS(th)
- 5 V V = v
DSS
8 mA I = .
(a) Cu kin ny l knh-p hay knh-n?
(b) Xc nh mc dng
D
I theo cc gi tr ca
GS
V
trong khong t - 5V n + 5V theo bc tng
1V.
(d) V c tuyn truyn t bng cch s dng s
liu t phn (b)
Mc 2-7 Phn cc cho MOSFET
39. Hy xc nh mi D-MOSFET mch hnh
7.65, l c phn cc ch no (ngho;
tng cng; hay phn cc 0).
40. Mi E-MOSFET mch hnh 7.66, c
GS(th)
V
bng + 5V hoc 5V, ty thuc vo cu
kin l knh-n hay knh-p. Hy xc nh
tng MOSFET dn [ON] hay ngng dn
[OFF].
-56-
41. Hy xc nh
DS
V cho mi mch hnh 7.67,
DSS
8 mA I = .
42. Tnh
GS
V v
DS
V cho mi mch E-MOSFET hnh
7.68, Thng s c lit k mi mch.
43. Cn c vo cc gi tr o
GS
V t ng
h trn mch, hy xc nh mc
dng mng v in p mng-ngun
cho mi mch hnh 7.69.
44. Hy xc nh in p cng-ngun thc t
mch hnh 7.70, bng cch tnh t dng r cng,
GSS
I . Cho bit l
GSS
I
bng 50 pA v
D
I bng 1mA cc trng thi phn cc tng ng.
Mc 2-8 IGBT
45. Hy gii thch ti sao IGBT c in tr vo rt cao.
46. Hy gii thch dng collector tng vt tri nh th no to ra trng thi cht-ln [latch-up]
IGBT.
Mc 2-9 Mch khuych i ngun-chung (CS)
47. Mt JFET c g
m
= 6mS. Hy xc nh mc dng mng rms theo mi gi tr rms ca
GS
V sau.
(a) 10mA (b) 150mV (c) 0,6V (d) 1V
48. H s khuych i ca mch khuych i bng JFET vi in tr mc ti cc ngun bng 0 l 20.
Hy xc nh in tr mng nu g
m
bng 3,5mS.
-57-
49. Mt mch khuych i bng JFET c 4, 2 mS
m
g = ;
DS
12 k r' = v
D
4, 7 k R = . H s khuych
i in p ca mch l bao nhiu? Gi thit in tr mc ti cc ngun l 0 O..
50. H s khuych i ca mch khuych i cho bi tp 3 l bao nhiu nu in tr mc ti cc
ngun bng 1 kO?
51. Nhn dng loi FET v mch phn
cc ca FET hnh 8.33.
GS
V l bao
nhiu?
52. Tnh cc mc in p dc trn mi
in cc so vi t ca cc FET
hnh 8.33.
53. Nhn bit c tuyn hnh
8.34, tng ng vi loi FET
no?
54. Tham kho c tuyn truyn t ca JFET hnh 8.18(a) v xc nh tr s nh-nh ca
d
i khi
thay i trong khong 1,5V xung quang gi tr ca im - Q.
55. Lp li bi tp 8 vi cc c tuyn hnh 8.18(b) v hnh 8.18(c).
-58-
56. Mch hnh 8.35, c
D
2,83 mA I = , tnh
DS
V v
GS
V . Thng s ca
JFET l
GS(off )
- 7 V V = v
DSS
8 mA I = .
57. Nu a tn hiu vo 50 mV rms n mch khuych i hnh 8.35,
th mc in p ra nh-nh l bao nhiu? g
m
= 5 mS.
58. Nu ti 1,5 kO c mc u ra ca mch hnh 8.35, th mc in p ra (rms) c trn ti l bao
nhiu khi t tn hiu vo l 50 V rms? g
m
= 5 mS.
59. Hy xc nh h s khuych i in p cho mi mch hnh 8.36.
60. V mch tng ng
dc v ac cho b
khuych i hnh
8.37.
61. Xc nh mc dng
mng trong mch
hnh 8.37, JFET c
DSS
15 mA I = v
GS(off )
- 4 V V = . im-
Q c chn trung
tm vng lm vic.
62. H s khuych i ca mch hnh 8.37, l
bao nhiu nu C
2
c tho ra khi mch.
63. Trong mch hnh 8.37, nu mc song song
vi R
L
mt in tr 4,7kO, th h s in p
l bao nhiu?
-59-
64. Vi mch khuych i ngun-chung (CS) hnh 8.38, hy
xc nh
D
I ,
GS
V v
DS
V c im-Q trung tm.
DSS
9 mA I = , v
GS(off )
- 3 V V = .
65. Nu t tn hiu 10 mV rms vo u vo ca mch khuych i
hnh 8.38, th gi tr hiu dng ca tn hiu ra l bao nhiu?
66. Hy xc nh
GS
V ,
D
I , v
DS
V ca mch khuych i hnh 8.39.
D(on)
18 mA I = o mc
GS
10 V V = ;
GS(th)
2, 5 V V = , v g
m
= 3mS.
67. Hy xc nh
in
R nhn t ngun tn hiu vo mch hnh
8.40.
GSS
25 nA I = tng ng vi
GS
- 15 V V = .
68. Hy xc nh dng sng in p ton b ti cc mng (dc v
ac) v dng sng
out
V hnh 8.41. g
m
= 4,8 mS v
DSS
15 mA I = .
69. Cho mch khuych i khng ti hnh 8.42, tnh
GS
V ,
D
I ,
DS
V , v in p ra hiu dng,
DS
v . Bit
D(on)
8 mA I = ti
GS
12 V V = ;
GS(th)
4 V V = , v g
m
= 4,5mS.
-60-
Mc 2-10 Mch khuych i mng chung CD
70. Cho mch lp li-ngun hay cn gi l SF [Source-
Follower] hnh 8.43, tnh h s khuych i in p v
in tr vo ca mch.
GSS
50 pA I = ti
GS
- 15 V V = ; v g
m
= 5,5 mS.
71. Nu JFET trong mch hnh 8.43, c thay th bng mt JFET khc c g
m
= 3mS, th h s
khuych i v in tr vo l bao nhiu? tt c cc iu kin khc trong mch khng thay i.
72. Tnh h s khuych i cho mi mch hnh 8.44.
73. Xc nh h s khuych i in p cho mi mch
hnh 8.44, khi ti c thay i bng 10 kO.
Mc 2-11 Mch khuych i cng chung CG
74. Mt mch cng chung c g
m
= 4mS v
D
1, 5 k R = .
H s khuych i ca mch l bao nhiu?
75. in tr vo ca mch khuych i bi tp 74 l
bao nhiu?
76. Hy xc nh h s
khuych i in p
v in tr vo ca
mch khuych i
cng chung hnh
8.45.
-61-
77. Cho mch khuych i cascode nh th hin hnh
9.24, 2,8 mS
m
g = ;
GSS
2 nA I = @
GS
15 V V = . Nu
3
15 M R = v 1, 5 mH L = , hy xc nh h s
khuych i in p v tr khng vo tn s
100 MHz f = .
Mc 2-12 Mch khuych i lp D
78. Mch khuych i lp D c tn hiu ra l 9 V. Nu tn hiu vo l 5 mV, th h s khuych i l
bao nhiu ?
79. Mch khuych i lp D tiu tn cng sut l 140 mW b so snh v mch to sng tam gic.
Mi MOSFET h b c st p l 0,25 V trng thi dn [on]. Mch khuych i lm vic t hai
ngun 12 Vdc v cung cp 0,35 V n ti. Hy xc nh hiu sut.
Mc 2-13 Chuyn mch tng t bng MOSFET
80. Mt chuyn mch tng t s dng MOSFET knh-n c
GS(th)
4 V V = . in p + 8 V c t n
cng. Hy xc nh tn hiu vo nh-nh ln nht c th p dng nu st p mng-ngun
c b qua.
81. Chuyn mch tng t c s dng ly mu tn hiu c tn s ln nht l 15 kHz. Hy xc
nh tn s thp nht ca xung c p t vo cng ca MOSFET.
82. Mch t lm chuyn mch s dng t 10 pF. Hy xc nh tn s yu cu . . .
83. Vi tn s 25 kHz, in tr emulated l bao nhiu chuyn mch t nu 0, 001 F C = .
-62-
Mc 2-14 Chuyn mch s bng MOSFET
84. in p u ra ca b o bng CMOS l bao nhiu lm vic vi
DD
5 V V = + , khi tn hiu u
vo l 0 V? Khi tn hiu vo + 5 V?
85. i vi mi t hp tn hiu vo sau y, xc nh tn hiu ra cng NAND bng CMOS hot
ng vi
DD
3, 3 V V = +
(a)
A
0 V V = ;
B
0 V V =
(b)
A
3, 3 V V = ;
B
0 V V =
(c)
A
0 V V = ;
B
3, 3 V V =
(d)
A
3, 3 V V = ;
B
3, 3 V V =
86. i vi mi t hp tn hiu vo sau y, xc nh tn hiu ra cng NOR bng CMOS hot ng
vi
DD
3, 3 V V = +
(a)
A
0 V V = ;
B
0 V V =
(b)
A
3, 3 V V = ;
B
0 V V =
(c)
A
0 V V = ;
B
3, 3 V V =
(d)
A
3, 3 V V = ;
B
3, 3 V V =
87. Lit k hai u im ca chuyn mch cng sut bng MOSFET so vi bng BJT.
Mc 2-15 Sai hng mch FET
88. Mc dng ch th trn ng h o
hnh 7.58(a) gim t ngt v 0. Sai
hng c th c l nh th no?
89. Mc dng ch th trn ng h hnh
7.58(b) tng t bin ln 16mA. Sai
hng c th c l g?
90. Nu in p ngun cung cp mch hnh 7.58(c) ngu
nhin b thay i ln mc 20V, th s ch th trn
ammeter l bao nhiu?
91. in p o ti cc mng ca MOSFET mch hnh 7.66(a)
l + 10V. o th transistor cho thy bnh thng v cc kt
ni t tt. Nguyn nhn no c th gy ra s o trn?
-63-
92. in p o ti cc mng ca MOSFET mch hnh 7.66(b) l 0V. Mch khng c cc ngn mch
v o th transistor cho thy tt. Nguyn nhn no c th d xy ra nhiu nht vi s o trn?
93. Hy cho bit cc du hiu c th c no mi sai
hng sau khi in p tn hiu c t vo mch
hnh 8.46?
(a) Q
1
h mch t cc mng n cc ngun.
(b)
3
R h mch
(c)
2
C b ngn mch
(d)
3
C h mch
(e) Q
2
h mch t cc mng n cc ngun.
94. Nu 10 mV rms
in
v = mch hnh 8.46, th
out
v s l
bao nhiu tng ng vi cc h hng no sau y?
(a)
1
C h mch
(b)
4
C h mch
(c) mt ngn mch t cc ngun ca Q
2
vi t
(d) Q
2
c mt in cc b h mch
BI TP NG DNG H THNG
95. Tham kho hnh 8.58,
v xc nh in p
ca sensor theo mi
gi tr ca pH sau y
(a) 2
(b) 5
(c) 7
(d) 11
96. Da vo h c tuyn truyn t ca BF998 hnh 8.79, hy xc nh thay i
D
I khi in
p phn cc cng 2 c thay i t 6 V xung 1 V, v
G1S
V l 0 V. Mi c tuyn tng ng
vi mt gi tr
G2S
V .
-64-
97. Xt mch hnh 8.61, v v
c tuyn truyn t (
D
I theo
G1S
V ).
98. Tham kho hnh 8.79. Hy xc nh in p ra ca
mch hnh 8.61, nu
G1S Sensor
0 V V V = = v
2
R
c thay i v mc 50 k.
99. t in p 100mVrms c tn
s 1kHz vo im o s 1
hnh 8.47. Ti im o s 5
o c in p dc l 6,75V,
nhng khng c in p ac
ti im o ny. Hy xc
nh li duy nht trong mch.
-65-
100. Gi thit li bi tp 99 ca mch hnh 8.47, c khc phc v in p tn hiu vo c
tng ln mc 250 mV rms. Nu cc in p sau y l c o ti cc im o th quy nh, hy
xc nh li c th c v tnh trng hng cn phi tin hnh sa cha mch l g?
im o th s 2: 250 mV rms
im o th s 3: 800 mV rms
im o th s 4: 530 mV rms
im o th s 5: 2,12 V rms
101. Gi thit cc li trn y tromg mch hnh 8.47, c khc phc. Hy xc nh cc mc in
p dc v ac s phi o c ti im o s 5 nu transistor ca tng th nht c
DSS
2,85 mA I =
v g
m
= 2.2 mS v transistor ca tng th 2 c
DSS
5,10 mA I = v g
m
= 2,6mS. Tn hiu vo l
100 mV rms.
BI TP V THNG S CA FET
102. FET c s hiu 2N5457 l loi cu kin g?
103. Tham kho phiu s liu hnh 7.14, xc nh cc thng s sau:
(a)
GS(off )
V thp nht ca 2N5457.
(b) in p mng-ngun ln nht ca 2N5457.
(c) Mc tiu tn cng sut ln nht ca 2N5457 ti nhit mi trng l 25C.
(d) in p ngc cng-ngun ln nht ca 2N5458.
104. Tham kho phiu s liu hnh 7.14, xc nh mc tiu tn cng sut ln nht ca 2N5457
nhit mi trng 65C.
105. Tham kho phiu s liu hnh 7.14, xc nh g
m0
ca 2N5457 ti tn s 1kHz.
106. Tham kho phiu s liu hnh 7.14, mc dng mng in hnh ca 2N5457 khi
GS
0 V V = l bao
nhiu? .
-66-
107. Tham kho phiu s liu hnh 7.41, hy xc nh in p cng-ngun thp nht m MOSFET
bt u dn dng? .
108. Tham kho phiu s liu hnh 7.41, mc dng mng l bao nhiu khi
GS
10 V V = ?
109. Tham kho phiu s liu hnh 7.52, xc nh dng mng I
D
chy trong 2N3797 khi
GS
+ 3 V V =
Tnh
D
I tng ng vi
GS
- 2 V V = .
-67-
110. Tham kho phiu s liu hnh 7.52, h dn thun ln nht ca 2N3796 thay i trn khong
tn s tn hiu t 1kHz n 1MHz l bao nhiu?
111. Tham kho phiu s liu hnh 7.52, hy xc nh gi tr in hnh ca in p cng-ngun
tng ng khi 2N3796 chuyn sang ngng dn.
-68-
112. FET c s hiu 2N3796 l FET kiu g?
113. Tham kho phiu s liu hnh 8.30, xc nh cc thng s sau:
(a) V
GS(off)
in hnh ca 2N3796.
(b) in p mng-ngun ln nht ca 2N3797
(c) Mc tiu tn cng sut ln nht ca 2N3797 ti nhit mi trng l 25C
(d) in p cng-ngun ln nht ca 2N3797
114. Tham kho phiu s liu hnh 8.30, xc nh mc tiu tn cng sut ln nht ca 2N3796 ti
nhit mi trng l 55C.
115. Tham kho phiu s liu hnh 8.30, xc nh g
m0
nh nht ca 2N3796 ti tn s l 1kHz.
116. Dng mng ca 2N3797 l bao nhiu khi
GS
+3, 5 V V = ?
-69-
117. Dng mng c trng ca 2N3796 l bao nhiu khi c phn cc 0?
118. H s khuych i in p c th c ln nht ca mch khuych i ngun-chung bng 2N3796 l
bao nhiu vi
D
2, 2 k R = ?
BI TP NNG CAO
119. Tnh
DS
V v
GS
V trong mch hnh 7.71, bng cch s dng cc gi tr nh
nht ca cc thng s cn thit cho phiu s liu.
120. Tnh
D
I v
GS
V trong mch hnh 7.72.
121. Xc nh khong cc gi tr im-Q c th c t nh nht n ln nht cho
mch hnh 7.71.
122. Tnh in p mng-ngun cho cc mch cm bin pH hnh 8.59,
khi pH o c bng 5. Gi s cc bin tr l c thit lp
to ra mc 4 V ti cc cc mng khi pH c o bng 7.
123. Thit k mch MOSFET vi phn cc 0, s dng 2N3797 hot ng bng ngun cung cp + 9V
dc to ra
DS
V bng 4,5V. Dng mng ln nht chy t ngun l 1mA.
-70-
124. Thit k mch bng E-MOSFET vi cc thng s phiu s liu nh sau:
DS(on)
500 mA I = @
GS
10 V V = v
GS(th)
1 V V = . S dng ngun cung cp dc +12V, vi phn cc phn p to ra
in p + 8V ti cc mng v dng ln nht t ngun cung cp l 20mA.
125. MOSFET trong mt mch khuych i ngun-chung, n tng c khong cc gi tr h dn
thun t 2,5 mS n 7,5 mS. Nu mch khuych i ghp tng bng t vi ti c th thay i
c trong khong t 4 kO n 10 kO v in tr mng dc l 1,0 kO, hy xc nh cc h s
khuych i nh nht v ln nht.
126. Thit k mch khuych i s dng 2N3797 lm vic vi ngun cung cp l 24 V. in p mng-
ngun dc in hnh cn phi xp x 12 V v h s khuych i in p in hnh cn phi vo
khong bng 9.
127. Sa i li mch c thit k bi tp 126, c h s khuych i in p c th thit lp
mc bng 9 cho bt k transistor 2N3797 no c la chn mt cch ngu nhin.
-71-
BI TP B SUNG PHN FET
128. Thit k mch khuych i chung cc ngun-Common Source (CS) bng JFET c R
L
=
10kO, V
DD
= 12V, R
in
= 500kO, v A
v
= - 2. S dng mch hnh 4.16a. Chn im-Q l V
DSQ
=
6V, V
GSQ
= - 1V, I
DQ
= 1mA, v g
m
= 2500S.
[p s:
1 2
= 4, 78 k; =1, 22 k; = 509 k; = 27 M;& - 100
D S i
R R R R A = ]
129. Thit k li mch khuych i CS bng JFET bi tp 128, nu dng transistor c V
GSoff
= - 4V
v I
DSS
= 6mA.
[p s:
1 2 dc ac
= 500 k; = ; =1, 61 k; = 390 ; = 223 ;& - 100
D S S i
R R R R R A = ]
-72-
130. Thit k mch khuych i CD bng JFET (hnh 4.19) cho h s khuych i dng in bng
15 cho ti l R
L
= 20kO s dng V
DD
= 12V v R
in
= 400kO. S dng JFET knh-n c
V
GSoff
= - 3V, v I
DSS
= 6mA. Gi s V
DSQ
= V
DD
/2 v I
DQ
= 0,4I
DSS
. Tnh tr s ca cc in tr
v h s khuych i in p ca mch khuych i.
[p s:
dc ac 1 2
= 2,5 k; =1, 25 k; = 676 k; = 980 k;& 0, 75
S S i
R R R R A = ]
131. Xc nh tr s ca cc in tr v h s khuych i dng in cho
mch khuych i bootstrap bng JFET kiu SF theo cc yu cu
l R
in
= 200kO, R
L
= 20kO, v V
DD
= 10V. im- Q c chn
ti: V
DSQ
= 5V, I
DQ
= 0,5mA, V
GSQ
= - 1,5V, g
m
= 4mS. S dng
mch hnh 4.21.
[p s:
G 1 2
= 62,8 k; = 3 k; = 7 k; 9,3
S S i
R R R A = ]
-73-
132. Cho mch hnh P4.1a, vi JFET knh-n c th c cc thng s xp x bng phng trnh:
i
D
= 0,5(4 + v
GS
)
2
mA
v R
S
= 500O, R
D
= 2kO, R
in
= 100kO, I
DQ
= 5mA, v V
DD
= 20V. Hy xc nh cc thng s
ca mch sau:
(a) V
GSQ
; (b) V
D
; (c) V
DSQ
; (d) R
1
v
R
2
.
[p s:
1 2 dc
(a) - 0,84 V; (b) 10 V; (c) 7,5 V; = 109 k; =1, 2 M; = 390
S
R R R ]
133. Trong mch hnh 4.16a, khi c R
1
= 21kO, R
2
= 450kO, R
S
=
500O, R
D
= 1,5kO, R
L
= 4kO, v V
DD
= 12V, khi V
DSQ
= 4V, hy
xc nh cc thng s sau y:
(a) I
DQ
; (b) V
GSQ
; (c) R
in
; (d) A
v
khi g
m
= 3,16mS; (e) A
i
.
-74-
134. Trong mch hnh 4.16a, R
D
= 2kO, R
L
= 5kO, R
in
= 100kO, R
S
=
300O, v V
DD
= 15V. Xc nh cc tr s ca R
1
v R
2
cn thit
transistor lm vic mc 4mA khi V
GSoff
= - 4V v I
DSS = 8mA.
Tnh h s khuych i in p v dng in ca mch khuych
i.
135. ( a) Thit k mch khuych i chung
cc ngun [Common-Source tc
CS] (hnh P4.1) s dng JFET
knh-p p ng cc thng s yu
cu l A
v
= - 10 v R
in
= 20kO.
Gi thit l im-Q c chn ti
I
DQ
= - 1mA, V
DSQ
= -10V, V
GSQ
= 0,5V.
(b) Tnh A
i
, R
1
, R
2
, R
S
, v R
D
. (Da
vo c tuyn hnh P4.2. Lu
rng c th c chia tch R
S v
mch r cho R
S
).
[p s:
c dc 2
= 338 ; = 500 ; = 9,5 k; - 21,1; =
Sa S D i
R R R A R = ]
-75-
136 . Lp li bi tp 135 khi R
L
l 20kO; c ghp vo cc mng qua mt t ghp tng. Ch l, c
th cn phi chn im-Q khc.
137. Thit k mch khuych i CS s dng MOSFET nh mch hnh
P4.3. Cho R
L
= 1kO, A
v
= - 1, R
in
= 15kO. im-Q c chn
ti V
GSQ
= 3V, I
DQ
= 7mA, V
DSQ
= 10V, trong g
m
= 2300S.
Xc nh tr s cho tt c cc cu kin cn li.
-76-
138. Thit k mch khuych i CS s dng JFET knh-n cho kiu mch
nh hnh P4.4, vi A
v
= - 1, V
DD
= 12V, R
L
= 1kO, R
in
= 15kO,
I
DSS
= 10mA, v V
GSoff
= - 4V. S dng I
DQ
= I
DSS
/ 2.
[p s:
2
= 208 ; = 234 ; = 966 ; - 15; =
Sac Sdc D i
R R R A R = ]
139. Thit k mch khuych i CS s dng JFET knh-n khi c R
L
=
4kO, A
v
= - 3, v R
in
= 50kO. Gi s l transistor s dng c
V
GSoff
= - 4,2V v I
DSS
= 6mA. S dng mch nh hnh P4.4 vi
V
DD
= 20V. Xc nh A
i
.
-77-
140. Thit k mch khuych i CS bng JFET knh-n c A
V
= -2, A
i
=
-20, V
DD
= 12V, v R
L
= 5kO. Xc nh tr s ca tt c cc cu
kin v mc cng sut nh mc ca transistor. (mch c th cn
phi thay i p ng thit k). Transistor c chn c:
V
GSoff
= - 5V v I
DSS
= 8mA. S dng I
DQ
= 0,4I
DSS
v V
DSQ
=
V
DD
/2. Tham kho mch nh hnh P4.4.
141. Thit k mch khuych i CS bng JFET knh-p vi A
V
= - 4, A
i
= - 40, R
L
= 8kO, v V
DD
= - 16V. Transistor c chn c
V
GSoff
= 3V v I
DSS
= - 7mA, s dng I
DQ
= 0,3I
DSS
v V
DSQ
=
V
DD
/2. S dng mch hnh P4.4. Xc nh cng sut nh mc ca
transistor.
[p s: =1,36 V; = 2,55 mS; = 648 ;
GSQ m Sdc
V g R
trans 2
=174 ; =16,8 mW; =
Sac
R P R ]
-78-
142. Thit k mch khuych i CS bng JFET knh-p vi ti l 5kO,
s dng mch t ng t nh hnh P4.4. Cho V
DD
= - 20V, A
V
= - 2, A
i
= - 20, V
GSoff
= 6V v I
DSS
= - 5mA. Xc nh cng sut
nh mc ca transistor.
143. Thit k mch khuych i chung cc ngun (CS) bng
MOSFET knh-n, s dng transistor 3N128 (ph lc D trang 90-
92) cho ti l 10kO vi h s khuych i in p A
v
= - 10. S
dng mch hnh P4.3. Chn im-Q khi R
in
> 10kO, bng cch
s dng h c tuyn th hin theo cc thng s k thut trang
cui ca phn bi tp ny.
-79-
144. Thit k mch khuych i bng MOSFET knh-n, chung cc
ngun (CS) s dng transistor 3N128 (ph lc D trang 92-94)
cho ti l 2kO vi A
v
= - 4 v R
in
> 100kO. Gi s rng, im-Q
c chn l V
GSQ
= - 0,6V, V
DSQ
= 10V, I
DQ
= 10mA, V
DD
= 20V. Xem mch hnh P4.3.
[p s:
2
= 940 ; = 25 ; = 60 ; =
D Sac Sdc
R R R R ]
145. Phn tch mch khuych i CS bng JFET knh-n nh mch
hnh P4.5, khi c ti l 20kO, R
D
= 8kO, V
DD
= 24V, v R
in
=
50kO. Chn im-Q c V
GSQ
= - 1,5V, V
DSQ
= 12V, I
DQ
= 1mA,
v g
m
= 2,83mS. Hy tnh A
i
, A
v
v tr s ca tt c cu kin.
-80-
146. Nu R
S
mch hnh P4.4, c r mch bng t, th h s
khuych i in p l bao nhiu ? Gi s rng im-Q c
chn c g
m
= 1,5mS, R
D
= 3,2kO, v R
L
= 5kO. Xc nh h s
khuych i dng in khi R
S
= 500O, R
1
= 200kO, v R
2
=
800kO.
147. H s khuych i in p A
v
ca mch hnh P4.4, l bao nhiu
nu tn hiu c cung cp vo mch khuych i c in tr ca
ngun in p l R
i
= 10kO? Cho R
D
= 10kO, v R
L
= 10kO, R
S
=
500O, g
m
= 2mS, R
1
= 25kO, v R
2
= 120kO.
-81-
148. Cho mch nh hnh P4.6, gi s rng R
S
c r mch bng mt
t in. V
DD
= 15V, R
D
= 2kO, R
L
= 3kO, R
S
= 200O, R
1
=
500kO, I
DSS
= 8mA, v V
GSoff
= - 4V. Hy xc nh A
v
, A
i
, R
in
, v
im-Q cho mch khuych i.
[p s: = - 0,94 V; = - 3, 67; = - 612
GSQ v i
V A A ]
149. Cho mch hnh P4.6, gi s rng V
DD
= 20V; R
D
= 2kO; R
L
= 10kO;
R
S
= 200O; R
1
= 1MO; I
DSS
= 10mA, v V
GSoff
= -5V. Hy xc
nh im-Q, A
v
, A
i
, R
in
, v cho mch khuych i.
-82-
150. Cho mch hnh P4.6, gi s rng V
DD
= 20V, R
D
= 2kO, R
L
= 6kO,
R
S
= 100O, R
1
= 1MO, I
DSS
= 10mA, v V
GSoff
= - 5V. Hy xc
nh im-Q, A
v
, A
i
, R
in
, v cho mch khuych i.
151. Cho mch khuych i CS nh hnh P4.1a, s dng JFET c
I
DSS
= 2mA, v g
m0
= 2000S. Nu tr s ca R
D
= 10kO, R
S
=
200O, th h s khuych i in p A
v
l bao nhiu i vi cc
gi tr ca V
GSQ
sau y?
(a) V
GSQ
= 1V; (b) V
GSQ
= 0,5V; (c) V
GSQ
= 0V.
[p s: (a) - 8,33 V;(b) - 11,5;(c) - 14,3 ]
-83-
152. Mch khuych i CS hnh P4.6, vi transistor c V
GSoff
= -
4V, I
DSS
= 4mA, v r
DS
= 500O. Nu R
D
= 2kO, R
L
= 4kO, v
R
S
= 200O, th h s khuych i in p A
v
ca mch l bao
nhiu vi V
GSQ
= - 1V ? A
v
s nh th no khi r
DS
t n v cng?
153. Thit k mch khuych i CS bng MOSFET knh-n nh mch
hnh P4.3, khi c R
L
= 4kO, A
v
= - 5, v A
i
= - 10. Gi s rng,
im-Q chn c V
DSQ
= 10V, V
GSQ
= 4V, I
DQ
= 2mA, v g
m
=
4000S.
-84-
154. Cho mch nh hnh P4.7, c R
i
= 50kO, R
1
= 100kO, R
2
=
800kO, R
D
= 4kO, R
L
= 6kO, R
S
= 200O, v V
DD
= 20V,
xc nh cc thng s sau khi s dng FET c V
DSQ
=
6V, g
m
= 2,5mS:
(a) I
DQ
, V
GG
, v V
GSQ;
(b) A
v
, R
in
, v A
i
.
[p s: (a) = 1,55 V; (b) - 3,84; (c) 88,9 k ; (d) - 88,9
GSQ
V O ]
155. Cho mch nh hnh P4.7, nu loi b R
2
, transistor FET
lm vic mc dng l 2mA. Tr s ca cc cu kin l
R
i
= 100kO, R
1
= 400kO, R
D
= 3kO, R
L
= 5kO, v V
DD
=
12V. Xc nh cc thng s sau khi s dng transistor c
I
DSS
= 8mA, v V
GSoff
= - 4V:
(a) R
S
; (b) A
v
, R
in
, v A
i
.
-85-
156. Thit k mch khuych i lp li-cc ngun (SF)
bng JFET knh-p nh hnh P4.8, vi R
in
= 20kO,
nhn c h s khuych i in p A
v
gn
bng 1. Tnh A
i
, R
1
, R
2
, v R
S
. S dng h c
tuyn cho hnh P4.2.
157. Lp li bi tp 156, khi c ti l 20kO c ghp t vi mch khuych i.
[p s:
1 2
= 18, 2 k ; = 0, 92; = 37 k ; = 43, 5 k
S i
R A R R O O O]
-86-
158. Thit k mch khuych i bng MOSFET kiu mng-chung (CD)
khi c R
L
= 100O, A
i
= 200, v R
in
= 100kO. S dng transistor c
V
GSoff
= - 6V v I
DSS
= 20mA. Xc nh A
v
v gi tr ca tt c cc
in tr. Mch s dng hnh P4.9.
159. Thit k mch khuych i CD bng MOSFET knh-n, trong R
in
= 120kO, A
i
= 100, R
L
= 500O, V
DD
= 20V, v chn transistor c
V
GSoff
= - 5V v I
DSS
= 15mA. S dng mch hnh P4.9, vi I
DQ
= 0,6I
DSS
v V
DSQ
= V
DD
/2.
-87-
160. Thit k mch khuych i lp li cc ngun (SF) s dng JFET knh-n cho h s
khuych i dng l 100 v in tr vo l 500kO. Ti l 2kO. Chn im-Q theo cc tham s
l: V
DSQ
= 8V, I
DQ
= 5mA, V
GSQ
= - 1V, v g
m
= 4mS. Xc nh cc in tr, h s khuych i
in p v v mch khi V
DD
= 10V.
[p s:
1 2
= 556 k ; = 5 M R R O O]
161. Lp li bi tp 160 nhng bng transistor khc vi gi tr ca cc thng s l:
V
GSoff
= -3V, I
DSS
= 10mA.
-88-
162. Thit k mch nh hnh 4.21, khi c V
DD
= 16V v R
L
= 8kO. S dng transistor c V
GSoff
= - 3,33V, I
DSS
=
10mA. Xc nh ton b tr s ca cu kin, A
i
, v A
v
khi
c R
in
= 12kO.
163. Da vo bi tp 162, xc nh ton b tr s ca cu kin, A
i
, v A
v
khi c R
in
= 200kO .
[p s:
1 2
= 50, 9 k ; = 21,1; = 0,844; = 200 ; = 1400
G i v S S
R A A R R O O O]
-89-
Ph lc D: Trang s liu ca hng ch to
(Appendix D: Manufacturers Data Sheets)
-90-
-91-
-92-
-93-
-94-
-95-
-96-
-97-
-98-
TM TT NI DUNG V BJT & MCH
3-1. BJT (Bipolar junction transistor) c cu to bng ba vng: base, collector, v emitter.
BJT c hai tip gip pn, tip gip base-emitter v tip gip base-collector.
Dng in chy trong BJT bao gm c dng cc in t t do v dng cc l trng, thut ng
bipolar th hin nh vy.
Vng base l rt mng v c pha tp long so vi cc vng collector v emitter.
Hai loi BJT l npn v pnp.
3-2. lm vic nh mt b khuych i, tip gip base-emitter cn phi c phn cc-thun v
tip gip base-collector cn phi c phn cc-ngc. iu ny c gi l phn cc thun-
ngc.
Ba dng in chy trong transistor l dng base (
B
I ), dng emitter (
E
I ), v dng collector
(
C
I ).
B
I l rt nh so vi
C
I v
E
I .
3-3. H s khuych i dng dc ca transistor l t s ca
C
I i vi
B
I v c k hiu l
DC
| . Cc
tr s in hnh trong khong t di 20 n vi trm.
DC
| thng c xem nh
FE
h trang s liu ca transistor.
T s ca
C
I vi
E
I c gi l
DC
o . Cc gi tr in hnh trong khong t 0,95 n 0,99.
C s bin thin
DC
| theo nhit v cng nh t mt transistor ny n transistor khc
cng mt loi transistor.
3-4. Khi transistor c phn cc-thun, h s khuych i in p ph thuc vo in tr emitter
trong (in tr ni) v in tr collector ngoi.
H s khuych i in p l t s ca in p ra vi in p vo.
Cc in tr trong ca transistor c th hin bng ch in thng r.
3-5. Transistor c th lm vic nh mt chuyn mch in t vng ngng dn v dn bo ha.
vng ngng dn, c hai tip gip pn u c phn cc-ngc v v c bn khng c dng
collector. Xt mt cch l tng, transistor ng vai tr nh mt chuyn mch h gia
collector v emitter.
vng bo ha, c hai tip gip pn u c phn cc-thun v dng collector l ln nht. Xt
mt cch l tng, transistor ng vai tr nh mt chuyn mch kn gia collector v emitter.
3-6. Trong phototransistor, dng base c to ra bng nh sng chiu vo.
Phototransistor c th l cu kin hai-in cc hoc cu kin ba in-cc.
Optocoupler gm mt LED v photodiode hoc phototransistor.
Optocoupler c s dng cc mch cch ly v in.
3-7. C nhiu kiu ng v transistor bng v nha [plastic], v kim loi, hay v gm.
Hai kiu v c bn l kiu xuyn-l [through-hole] v dn b mt.
3-8. Nn kim tra transistor trong-mch trc khi tho transistor.
Cc li thng thng trong cc mch transistor l cc tip gip h mch,
DC
| thp, cc dng r
vt qu mc cho php, v h mch hoc ngn mch bn ngoi transistor trong bng mch.
-99-
E C B
I I I = + (3-1) Cc dng in ca transistor.
C
DC
B
I
I
| = (3-2) H s khuych i dng DC.
BE
0, 7 V V ~ (3-3) in p base-emitter (silicon).
BB BE
B
B
V V
I
R
| = ; (b)
C DC
I I
o = ; (c)
C
I I
= ; (d)
DC
2
C
I I
| = .
19. Mt optocoupler thng bao gm
(a) 2 LED; (b) mt LED v mt photodiode;
(c) mt LED v mt phototransistor; (d) c (b) v (c).
20. Trong mch khuych i nu tip gip base-emitter b h mch, th in p collector l
(a)
CC
V ; (b) 0V; (c) khng xc nh; (d) 0,2V.
21. Khi o bng DMM trn mt tip gip ca transistor b t (h mch) s th hin
(a) 0 V; (b) 0,7V; (c) OL; (d)
CC
V .
22. Tr s dng collector ln nht trong transistor c phn cc l
(a)
DC B
I | ; (b)
C(sat)
I ;
(c) ln hn dng
E
I ; (d)
E B
I I .
23. Xt mt cch l tng, ng ti dc l ng thng v trn h c tuyn collector gia
(a) im-Q v vng ngt; (b) im-Q v vng bo ha;
(c)
CE(cutoff )
V v
C(sat)
I ; (d)
B
0 I = v
B C DC
I I | = .
24. Nu t in p sinusoudal vo base ca transistor npn c phn cc v to ra in p dng sin
trn collector b xn gn mc 0 volt, th transistor l
(a) b iu khin vo trng thi bo ha; (b) b iu khin vo trng thi ngt;
(c) ang hot ng vng phi tuyn; (d) c (a) v (c); (e) c (b) v (c).
25. in tr vo ti base ca transistor c phn cc ph thuc ch yu vo
(a)
DC
| ; (b)
B
R ; (c)
E
R ; (d)
DC
| v
E
R .
-102-
26. Trong mch transistor phn cc phn p nh hnh 5.13, R
IN(base)
thng c th c b qua trong cc tnh ton khi
(a)
IN(base) 2
R R > ; (b)
2 IN(base)
10 R R > ;
(c)
IN(base) 2
10 R R > ; (d)
1 2
R R << .
27. Trong mt mch transistor phn cc phn p,
B
2, 95 V V = . in p
emitter dc vo khong
(a) 2,25 V; (b) 2,95 V; (c) 3,65 V; (d) 0,7 V.
28. Mch phn cc phn p c c im l
(a) c th ph thuc vo
DC
| ; (b) v c bn c th xem khng ph thuc vo
DC
| ;
(c) khng c s dng rng ri; (d) cn t linh kin so vi tt c cc phng php khc.
29. Mch phn cc emitter l
(a) v c bn l c lp vi
DC
| ; (b) ph thuc nhiu vo
DC
| ;
(c) cho im phn cc n nh; (d) gm c (a) v (c).
30. Trong mch phn cc emitter,
E
= 2, 7 k R ; v
EE
15 V V = , th dng emitter bng
(a) 5,3 mA; (b) 2,7 mA; (c) 180 mA; (d) khng th xc nh c
31. Nhc im ca kiu phn cc base l
(a) mch rt phc tp; (b) mch cho h s khuych i thp;
(c) mch qu ph thuc nhiu vo beta; (d) mch cho dng r cao.
32. Mch phn cc hi tip-collector c c im l
(a) da vo nguyn l hi tip dng; (b) da vo php nhn beta;
(c) da vo nguyn l hi tip m; (d) n nh rt km.
33. Trong mch npn phn cc phn p, nu in tr phn p pha trn (in tr ni vi
CC
V ) h mch
(a) transistor s chuyn vo ngng dn; (b) transistor s chuyn vo dn bo ha;
(c) transistor s chy; (d) in p ngun cung cp l qu cao.
34. Trong mch npn phn cc phn p, nu in tr phn p pha di (in tr ni t) h mch
(a) transistor khng nh hng; (b) transistor s c li vo ngng dn;
(c) transistor s c li vo dn bo ha; (d) dng collector s gim.
35. Trong mch transistor pnp phn cc phn p, khi khng c dng base m in p base xp x gi
tr ng. Sai hng c th xy ra nht l
(a) mt in tr phn cc b h mch; (b) in tr collector b h mch;
(c) tip gip base-emitter h mch; (d) in tr emitter h mch;
(e) c (a) v (c); (f) gm c (c) v (d).
-103-
36. Mch khuych i tn hiu nh
(a) s dng ch mt phn nh ng ti ca mch khuych i;
(b) lun lun cho mc tn hiu ra trong khong mV;
(c) s chuyn vo dn bo ha theo mi chu k tn hiu vo;
(d) lun lun phi l mch emitter-chung.
37. Thng s h
fe
tng ng vi
(a)
DC
| ; (b)
ac
| ;
(c)
e
r' ; (d)
c
r'
.
38. Nu dng emitter dc trong mt mch khuych i bng transistor l 3mA, th tr s gn ng ca
,
e
r
s l
(a) 3 kO; (b) 3 O; (c) 8,33 O; (d) 0,33 kO.
39. Mch khuych i emitter-chung c h s khuych i in p l 100. Nu tho t r mch emitter
ra khi mch, th
(a) mch s tr nn khng n nh; (b) h s khuych i in p s gim;
(c) h s khuych i in p s gim; (d) im-Q s b dch chuyn.
40. Cho mch khuych i emitter-chung c
C
=1, 0 k R ; 15
e
r' = ; v
ac
75 | = . Gi thit rng,
E
R l c r mch ton b ti tn s lm vic, h s khuych i in p l
(a) 66,7 (b) 2,56 (c) 2,47 (d) 75
41. Trong mch bi tp 40, nu tn s c gim xung n mc m
C(bypass) E
X R = , th h s
khuych i
(a) s vn khng i; (b) s thp hn; (c) s ln hn
42. Trong mch khuych i emitter-chung, phn cc phn p,
in(base)
= 68 k R ;
1
= 33 k R , v
2
=15 k R . Tng in tr vo s l
(a) 68 kO; (b) 8,95 kO; (c) 22,2 kO; (d) 12,3 kO.
43. Trong mch khuych i CE c ti 10 kO. Nu
C
= 2, 2 k R
;
v 10
e
r' = ; h s khuych i
in p vo khong
(a) 220; (b) 1000; (c) 10; (d) 180.
44. Cho mch khuych i collector-chung c
E
=100 R ; 10
e
r' = ; v 150
ac
| = . in tr vo ac
ti base l
(a) 1500 O; (b) 15 kO; (c) 110 O; (d) 16,5 kO.
-104-
45. Nu t tn hiu 10 mV vo base ca mch lp li emitter bi tp 44, th mc tn hiu ra xp x
bng
(a) 100 mV; (b) 150 mV; (c) 1,5 V; (d) 10 mV.
46. Trong mch lp li emitter, h s khuych i dng l 50. H s khuych i cng sut xp x
bng
(a) 50
v
A ; (b) 50; (c) 1 ; (d) c (a) v (b).
47. cu hnh cp darlington, mi transistor c beta ac l 125. Nu
E
R l 560O, th in tr vo s
l
(a) 560 O; (b) 70 kO; (c) 8,75 MO; (d) 140 kO.
48. in tr vo ca mch khuych i base-chung l
(a) rt thp; (b) rt cao; (c) nh mch CE; (d) nh mch CC.
49. Mi tng ca b khuych i bn tng c h s khuych i in p bng 15. H s khuych i
in p ton b l
(a) 60; (b) 15; (c) 50,625; (d) 3078.
50. H s khuych i ton b cu bi tp 49 c th tnh theo decibel l
(a) 94,1 dB; (b) 47,0 dB; (c) 3,65 dB; (d) 69,8 dB.
51. Mch khuych i vi sai
(a) c dng trong cc op-ams; (b) c mt u vo v mt u ra;
(c) c hai u ra; (d) c (a) v (c).
52. Khi mch khuych i vi sai lm vic kiu u ra-n,
(a) u ra c ni t;
(b) mt u vo c ni t v tn hiu s c t vo u vo cn li;
(c) c hai u vo c ni vi nhau;
(d) tn hiu ra khng b o pha.
53. kiu hot ng vi sai u ra-kp ca mch khuych i vi sai l
(a) cc tn hiu ngc cc tnh s c t vo cc u vo;
(b) h s khuych i bng 1;
(c) cc tn hiu ra c bin vi sai;
(d) ch s dng mt ngun cung cp.
54. kiu hot ng kiu-chung (ng pha) ca mch khuych i vi sai,
(a) c hai u vo c ni t; (b) c hai u ra c ni vi nhau;
(c) cng mt tn hiu vo ti hai u vo; (d) hai tn hiu ra l ng pha.
-105-
55. Mt mch khuych i hot ng vng tuyn tnh ti mi thi im l
(a) ch A; (b) ch AB; (c) ch B; (d) ch C.
56. Mt mch khuych i cng sut phn b 5 W n ti vi cng sut tn hiu vo bng 100 mW.
H s khuych i cng sut l
(a) 100 ; (b) 50; (c) 250; (d) 5.
57. Mc dng nh ca mch khuych i cng sut lp A c th phn b cng sut n ti ty thuc
vo
(a) nh mc ln nht ca ngun cung cp; (b) dng tnh;
(c) dng chy trong cc in tr phn cc; (d) kch thc ca cnh tn nhit.
58. c tn hiu ra ln nht, mch khuych i cng sut lp A cn phi duy tr gi tr dng tnh l
(a) mt na mc dng ti nh; (b) gp hai ln mc dng ti nh;
(c) t nht phi ln hn mc dng ti nh; (d) ch cn cao hn gi tr dng vng ngt.
59. Mt mch khuych i cng sut lp A c
CE
12 V V = v
CQ
1 A I = . u ra c cng sut tn hiu
ln nht bng
(a) 6 W ; (b) 12 W; (c) 1 W; (d) 0,707 W.
60. Hiu sut ca mch khuych i cng sut l t s ca cng sut phn b n ti vi
(a) cng sut tn hiu vo; (b) cng sut tiu tn tng trc;
(c) cng sut t ngun cung cp dc; (d) khng phi cc phng n trn.
61. Hiu sut ca mch khuych i cng sut lp A l
(a) 25% ; (b) 50%; (c) 79%; (d) 98%.
62. Cc transistor mch khuych i lp B c phn cc
(a) chuyn vo vng ngng dn; (b) trong vng bo ha;
(c) ti im gia ca ng ti; (d) ngay ti vng ngng dn .
63. Mo xuyn-tm l vn ca
(a) mch khuych i lp A; (b) mch khuych i lp AB;
(c) mch khuych i lp B; (d) tt c cc mch khuych i trn .
64. Mch khuych i y-ko lp B bng BJT khng ghp bng bin p s s dng
(a) hai transistor npn; (b) hai transistor pnp;
(c) cc transistor i xng b; (d) khng phi cc phng n trn .
65. Mch gng dng trong mch khuych i y-ko s lm cho
CQ
I sao cho
(a) bng vi dng chy trong cc diode v cc in tr phn cc;
(b) gp hai mc dng chy trong cc diode v cc in tr phn cc;
(c) bng mt na mc dng chy trong cc diode v cc in tr phn cc;
(d) bng 0 .
-106-
66. Hiu sut ca mch khuych i y-ko lp B l
(a) 25% ; (b) 50%; (c) 79%; (d) 98%.
67. Tn hiu ra ca mch khuych i y-ko lp B dng ngun-kp c
CC
20 V V = . Nu in tr ti
l 50 O, th gi tr ca
C(sat)
I l
(a) 5 mA ; (b) 0,4 A; (c) 4 mA; (d) 40 mA.
68. Hiu sut ca mch khuych i lp AB l
(a) cao hn so vi b khuych i lp B; (b) tng t nh khuych i lp B;
(c) xp x nh khuych i lp A; (d) hi thp hn so vi khuych i lp B .
69. tiu tn cng sut ca mch khuych i lp C thng l
(a) rt thp; (b) rt cao;
(c) tng t nh khuych i lp B; (d) tng t nh khuych i lp A.
70. Hiu sut ca mch khuych i lp C l
(a) thp hn so vi b khuych i lp A; (b) thp hn mch khuych i lp B;
(c) thp hn mch khuych i lp AB; (d) ln hn so vi cc b kh. i lp A, B, or AB.
-107-
BI TP
BI TP C BN
Mc 3-1 CU TO CA TRANSISTOR
1. Loi ht ti in a s trong vng base ca transistor npn l g?
2. Hy gii thch mc ch ca ch to vng base mng, v c pha tp long.
Mc 3-2 NGUYN L HOT NG CA TRANSISTOR
3. Ti sao dng base trong transistor thp hn nhiu so vi dng collector?
4. Trong mt mch transistor, dng base bng 2% ca dng emitter l 30mA.
Hy xc nh mc dng collector.
5. kiu hot ng bnh thng ca transistor pnp, base cn phi (+ hay -) so vi emitter v
(+ hay - ) i vi collector.
6. Tr s ca
C
I l bao nhiu c
E
5, 34 mA I = v
B
475 A I = ?
Mc 3-3 CC THNG S V H C TUYN CA TRANSISTOR
7. Tr s ca
DC
o l bao nhiu khi
C
8, 23 mA I = v
E
8, 69 mA I = ?
8. Mt transistor c
C
25 mA I = v
B
200 A I = . Xc nh tr s ca
DC
| .
9. Tr s ca
DC
| ca transistor l bao nhiu nu
C
20, 3 mA I = v
E
20, 5 mA I = ?
10. Tr s ca
DC
o l bao nhiu nu
C
5, 35 mA I = v
B
50 A I = ?
11. Mt transistor c
DC
0, 96 o = . Xc nh
C
I khi
E
9, 35 mA I = .
12. p t mc dng base bng 50A vo transistor mch hnh 4.45,
v st p trn
C
R l 5V. Xc nh
DC
| ca transistor.
13. Tnh tr s ca
DC
o cho transistor bi tp 12.
14. Gi thit cho transistor trong mch hnh 4.45, c
thay th bng BJT khc c . Hy tnh
B
I ;
C
I ;
E
I ; v
CE
V . Cho
CC
10 V V = , v
BB
3 V V =
-108-
15. Nu
CC
V mch hnh 4.45, tng ln mc 15 V, th cc
dng in v
CE
V thay i nh th no?
16. Xc nh cc dng in trong mch hnh 4.46. Tr s
ca
DC
| l bao nhiu?
17. Tnh tr s ca
CE
V ,
BE
V , v
CB
V c hai mch hnh 4.47.
18. Hy xc nh xem c transistor no trong 2 mch hnh
4.47, bo ha.
19. Tnh tr s ca
B
I ;
E
I ; v
C
I trong mch hnh 4.48.
DC
0, 98 o = .
20. Xc nh in p trn cc in cc ca mi
transistor i vi t cho mi mch hnh
4.49. Tnh tr s ca
CE
V ,
BE
V , v
CB
V .
21. Nu thay i
DC
| trong mch hnh 4.49(a) thay i t 100 n 150 do nhit tng, th thay
i dng collector l bao nhiu?
22. Mt transistor ang hot ng mc dng collecter bng 50mA. Tr s
CE
V c th cao bao nhiu
m khng lm cho transistor vt qu cng sut
D
1, 2 W P = ?
-109-
23. H s suy gim tiu tn cng sut ca mt transistor l 1mW/C.
D(max)
0, 5 W P = 25C. Vy
D(max)
P
)
ti 100C l bao nhiu?
Mc 3-4 TRANSISTOR LM MCH KHUYCH I
24. Mt b khuych i c h s khuych i in p l
50. in p ra l bao nhiu khi in p vo l 100
mV?
25. nhn c mc in p ra l 10 V vi in p vo
l 300 mV, th cn phi c h s khuych i in p
l bao nhiu?
26. Tn hiu 50 mV c t vo base ca mt transistor
c phn cc ng c
e
10 r' = O v
C
560 R = O.
Hy xc nh in p tn hiu ti collector.
27. Hy tnh tr s ca in tr collector trong mch khuych i bng BJT npn c
DC
250 | = ;
BB
2, 5 V V = ;
CC
9 V V = ;
CE
4 V V = ; v
B
100 k R = O.
28. H s khuych i dng dc ca mi mch hnh 4.47 l bao nhiu?
Mc 3-5 TRANSISTOR LM CHUYN MCH
29. Hy xc nh
C(sat)
I ca
transistor hnh 4.50. Gi
tr ca
B
I cn phi c l bao
nhiu to ra s bo ha?
Tr s thp nht ca
IN
V cn
thit l bao nhiu c s
bo ha? Cho rng
CE(sat)
0 V V = .
30. Transistor trong mch hnh
4.51, c
DC
150 | = . Xc
nh tr s ca
B
R cn thit
m bo s bo ha khi
IN
V l 5V.
IN
V cn phi bao
nhiu lm transistor
ngng dn? Gi s
CE(sat)
0 V V = .
-110-
Mc 3-6 PHOTOTRANSISTOR
31. Mt phototransistor trong mch c
DC
200 | = . Nu 100 A I
62. Mt ngun dng-hng s cung cp dng khng i n ti
(a) theo tt c cc gi tr ca dng in (b) theo tt c cc gi tr ca in tr ti
(c) theo tt c cc gi tr ca in tr ti trong phm vi gii hn xc nh
63. Mch d mc nh bao gm
(a) b so snh, transistor, v t in (b) b so snh, diode, v t in
(c) b so snh, diode, v cun in cm (d) b tch phn, diode, v t in
-189-
BI TP
BI TP C BN
Mc 4-1 Gii thiu v op-amp
1. Hy so snh op-amp thc t vi op-amp l tng.
2. Cho hai op-amp c thng s di y. Hy chn mt op-amp thch hp nht.
Op-amp 1: 5 M
in
Z = ; 100
out
Z = ; 50 000
ol
A =
Op-amp 2: 10 M
in
Z = ; 75
out
Z = ; 150 000
ol
A =
Mc 4-2 Cc m hnh u vo ca op-amp v cc thng s
3. Hy nhn dng kiu m hnh u vo ca mi op-amp hnh 12.52.
4. Mt op-amp c CMRR= 250 000. Hy chuyn i CMRR theo decibel.
5. H s khuych i vng h ca op-amp l 175 000. H s
khuych i ng pha (kiu chung common mode) l
0,18. Hy xc nh CMRR theo decibel.
6. Trang s liu ca mt op-amp cho bit CMRR bng
300 000 v A
ol
bng 90 000. H s khuych i kiu-
chung l bao nhiu?
7. Xc nh dng phn cc,
BIAS
I cho bit rng cc dng vo
op-amp l 8,3 A v 7,9 A.
8. Hy cho bit s khc bit gia dng phn cc u vo v
dng dch u vo, v tip theo hy tnh dng dch u vo
theo thng s cho bi tp 7.
9. Hnh 12.53, th hin in p ra ca op-amp p ng theo tn
hiu vo bc (xung). Tc p ng [slew rate] l bao
nhiu?
10. in p u ra ca mt op-amp thay i t -10V n +10V
trong khong thi gian bao nhiu nu tc p ng [slew
rate] = 0,5V/s?
-190-
Mc 4-3 Op-amp c hi tip m
11. Hy cho bit cc kiu mch
op-amp hnh 12.54.
12. Mch khuych i khng o
c R
i
= 1,0kO v R
f
= 100kO.
Hy xc nh V
f
v B nu V
out
= 5V.
13. Cho mch khuych i nh hnh 12.55, xc nh cc thng s sau:
(a) A
cl(NI)
(b) V
out
(c) V
f
14. Hy xc nh h s khuych i vng-kn ca mi mch hnh 12.56.
15. Tnh tr s ca R
f
c h
s khuych i vng kn
c ghi trong mi mch
khuych i hnh 12.57.
16. Tnh h s khuych i ca mi mch khuych i hnh 12.58
-191-
17. Nu t tn hiu 10mV rms vo mi mch khuych i hnh 12.58, cc in
p ra l bao nhiu? v quan h v pha gia tn hiu vo v ra l nh th no?
18. T mch hnh 12.59, hy xc nh gi tr ca mi i lng sau:
(a) I
in
(b) I
f
(c) V
out
(d) H s khuych i vng-kn
Mc 4-4 Cc nh hng ca hi tip m ln cc tr khng ca op-amp
19. Hy xc nh cc tr khng vo v ra ca mi kiu mch khuych i hnh 12.60.
20. Hy xc nh cc tr khng vo v ra ca mi kiu mch khuych i hnh 12.61.
21. Hy xc nh cc tr khng vo v ra ca mi kiu mch khuych i hnh 12.62.
-192-
Mc 4-5 Dng phn cc v in p dch
22. Mt b lp li-in p c cung cp bi ngun in p
c in tr ngun l 75O.
(a) Tr s ca in tr b cn thit cho dng phn cc l
bao nhiu, v in tr cn phi c lp u?
(b) Nu hai mc dng vo sau khi b l 42A v 40A,
th in p sai lch u ra l bao nhiu?
23. Hy xc nh tr s ca in tr b cho mi
mch hnh 12.60, v cho bit cch mc
in tr.
24. Mt b lp-in p bng op-amp c th c
in p dch u vo l 2nV. in p sai
lch u ra l bao nhiu?
25. in p dch u vo ca mt op-amp l bao
nhiu nu c mc in p ra dc l 35mV
c o khi in p vo bng 0? Cho h s
khuych i vng-h ca op-amp l 200
000.
Mc 4-6 p ng tn s vng-h v p ng pha
26. H s khuych i vng-h gia bng [midrange] ca op-amp l 120dB. Mch hi tip m lm
suy gim h s khuych i nh mc mt lng bng 50dB. H s khuych i vng-kn l bao
nhiu?
27. Tn s ti hn trn ca p ng vng-h ca op-amp l 200Hz. Nu h s khuych i nh mc
l 175 000, th h s khuych i l tng tng ng mc 200Hz l bao nhiu? H s khuych
i thc t l bao nhiu? rng bng tn vng-h ca op-amp l bao nhiu?
28. Mt mch lm tr RC c tn s ti hn l 5kHz. Nu tr s in tr l 1,0kO, th dung khng X
C
l
bao nhiu khi c f = 3kHz?
29. Hy xc nh suy gim ca mch tr RC vi f
c
= 12kHz cho mi tn s sau.
(a) 1kHz (b) 5kHz (c) 12kHz (d) 20kHz (e) 100kHz
30. H s khuych i vng-h gia bng ca mt op-amp l 80 000. Nu tn s ti hn vng-h l
1kHz, th h s khuych i vng-h tng ng vi mi tn s sau l bao nhiu?
(a) 100kHz (b) 1kHz (c) 10kHz (d) 1MHz
-193-
31. Xc nh dch pha thng qua mi mch hnh 12.63, ti tn s l 2kHz.
32. Mt mch tr RC c tn s ti hn l 8,5kHz. Xc nh dch pha theo mi tn s v v th
ca gc pha theo tn s.
(a) 100Hz (b) 400H (c) 850Hz
(d) 8,5kHz (e) 25kH (c) 85kHz
33. Mt mch op-amp c ba tng khuych i bn trong vi cc h s khuych i nh mc l 30dB,
40dB, v 20dB. Mi tng cng c tn s ti hn tng ng l: f
c1
= 600Hz, f
c2
= 50kHz, v f
c3
=
200kHz.
(a) H s khuych i vng h nh mc ca b khuych i l bao nhiu, tnh theo dB?
(b) dch pha tng thng qua b khuych i l bao nhiu, k c s o pha, khi tn s tn
hiu l 10kHz?
34. Tc gim [roll-off rate] bi tp 33 gia hai tn s sau l bao nhiu?
(a) 0Hz v 600Hz (b) 600Hz v 50kHz
(c) 50kHz v 200kHz (d) 200kHz v 1MHz
Mc 4-7 p ng tn s vng-kn
35. Hy xc nh h s khuych i gia bng [midrange gain] theo dB ca mi mch khuych i
hnh 12.64. Cc h s khuych i l vng-kn hay vng-h?
-194-
36. Mt mch khuych i c h s khuych i vng-h nh mc l 180 000 v tn s ti hn vng
h l 1500Hz. Nu suy gim ca mch hi tip l 0,015, rng bng tn vng-kn l bao
nhiu?
37. Cho bit rng f
c(ol)
= 750Hz, A
ol
= 89dB, v
f
c(cl)
= 5,5kHz, xc nh h s khuych i
vng kn theo dB.
38. rng bng tn tng ng vi h s khuych i bng 1 bi tp 37 l bao nhiu?
39. Vi mi mch khuych i hnh 12.65, hy xc nh h s khuych i vng-kn v rng
bng tn. Cc op-amp trong mi mch c h s khuych i vng-h l 125dB v rng bng
tn tng ng vi h s khuych i bng 1 l 2,8MHz.
40. Mch khuych i no hnh 12.66 c rng bng tn nh nht?
Mc 4-8 Cc b so snh
41. Mt op-amp c h s khuych i vng-h bng 80 000. Mc tn hiu ra bo ha ln nht ca cu
kin l 12 V khi in p ngun cung cp dc l 15 V. Nu t in p chnh lch gia hai u
vo l 0,15 Vrms, th gi tr nh-nh ca in p ra l bao nhiu?
-195-
42. Hy xc nh mc tn hiu ra (mc dng ln nht hoc mc m ln nht) cho mi b so snh
hnh 13.60.
43. Hy tnh
UTP
V v
LTP
V cho mch so snh nh hnh 13.61.
( )
10 V
out max
V = .
44. Mc in p tr mch hnh 13.61, l bao nhiu?
45. V dng sng in p ra cho mi mch hnh 13.62, theo tn hiu vo. Th hin cc mc in
p.
46. Xc nh in p tr cho mi b so snh
hnh 13.63. Cc mc in p ra ln nht l
11 V.
47. Mt diode zener 6,2 V c ni t u ra v
u vo o mch hnh 13.61, vi cathode
mc ti u ra. Cc mc ra dng v m l
nh th no?
-196-
48. Hy xc nh dng sng in p ra mch
hnh 13.64.
Mc 4-9 B khuych i tnh tng
49. Hy xc nh in p ra cho mi mch hnh 13.65.
50. Xt mch hnh 13.66. Xc nh cc thng s sau:
(a)
1 R
V v
2 R
V
(b) Dng chy qua
f
R
(c)
OUT
V
51. Hy tnh gi tr ca
f
R cn thit to ra tn hiu ra bng
nm ln tng ca cc mc vo mch hnh 13.66.
52. Hy v mch khuych i tnh tng c gi tr
trung bnh ca tm in p vo. S dng cc in
tr u vo l 10 kO cho mi u vo.
53. Hy tnh in p ra khi cc in p vo cho trong
mch hnh 13.67, t vo b cng t l. Dng
chy qua
f
R l bao nhiu?
-197-
54. Hy xc nh gi tr ca cc in tr vo cn thit trong mch cng chia thang 6-u vo c
u vo trng s thp nht l 1 v mi u vo lin tip c trng s gp i u vo trc . S
dng 100 k
f
R = .
Mc 4-10 B tch phn v vi phn
55. Hy xc nh tc thay i ca in p ra p ng
theo tn hiu vo bc t vo b tch phn nh mch
hnh 13.68.
56. Dng sng tam gic c t vo u vo ca mch
hnh 13.69. Hy xc nh tn hiu ra v v dng
sng lin quan vi tn hiu vo.
57. Cng dng in qua t bi tp 56 l bao nhiu?
58. Dng sng tam gic c in p nh-nh l 2 V v
chu k l 1 ms c t vo mch vi phn hnh
13.70a. in p ra l bao nhiu?
-198-
59. Khi bt u v tr 1 mch hnh 13.70a, chuyn mch chuyn qua v tr 2 v duy tr v tr
10 ms, sau tr li v tr 1 trong thi gian 10 ms, v v. v. . . Hy v dng sng ra kt qu nu
gi tr ban u ca n l 0 V. Cc mc ra bo ha ca op-amp l 12 V.
Mc 4-11 Sai hng trong mch OP-AMP
60. Hy xc nh sai hng c th xy ra nht theo tng hin tng c
trong mch hnh 12.67, vi tn hiu t vo mch l 100mV.
(a) Khng c tn hiu ra.
(b) Tn hiu ra b xn nhiu c hai pha dng v m ca
dng sng.
61. Hy xc nh nh hng ln tn hiu ra nu mch hnh 12.67, c cc sai hng sau (mt sai hng
trong mt ln xt).
(a) Chn u ra ca op-amp b ngn mch vi chn u vo o.
(b) R
3
h mch
(c) R
3
= 10kO thay cho 910O.
(d) R
1
v R
2
l c hon i
62. Trn bng mch hnh 12.68, (cc) sai hng no s c nu u gia (u trt) ca bin tr
100kO b t?
-199-
63. Cc dng sng cho hnh 13.71a, l c quan st ti cc im c ch r hnh 13.71b.
Mch lm vic c ng khng? Nu khng, th sai hng c th l nh th no?
64. Chui cc mc in p nh hnh 13.72, c a n b khuych i tnh tng v quan st
dng sng ra cng c ch r. Trc tin, hy xc nh dng sng ra l ng. Nu khng ng,
hy xc nh sai hng?.
-200-
65. Cc in p rng ca cho c t vo mch op-amp hnh 13.73. Dng sng in p ra
cho c ng khng? Nu khng ng, th sai hng l g?
66. Cc u vo ca DAC nh th hin hnh 13.27, s to ra dng sng ra nh th hin hnh
13.74. Xc nh li trong mch.
-201-
BI TP NG DNG H THNG HOT NG
67. Trong mch khuych i hnh 12.47, hy lit k cc sai hng c th c lm cho tng y-ko
hot ng khng tuyn tnh (mo dng tn hiu).
68. Hy cho bit iu g s xy ra nu in tr 100 O c lp khng ng vo v tr ca R
2
trong
mch hnh 12.47?
69. in p o trn u ra ca mch khuych i hnh 12.47, l bao nhiu nu diode D
1
b h mch?
-202-
BI TP V THNG S CA OP-AMP
70. Tham kho phn phiu s liu ca 741 (LM741) hnh 12.69. Xc nh in tr (tr khng) vo
ca mt mch khuych i khng o s dng op-amp 741 vi R
f
= 47kO v R
i
= 470O. S
dng cc tr s in hnh.
-203-
71. Tham kho phn phiu s liu hnh 12.69. Xc
nh tr khng vo ca mt op-amp LM741 c
mc nh mt mch khuych i o vi h s
khuych i in p vng-kn bng 100 v R
f
=
100kO.
72. Tham kho phn phiu s liu hnh 12.69, v xc
nh h s khuych i vng-h ca LM741 c
tnh theo t s gia in p ra i vi in p vo.
73. Tham kho phn phiu s liu hnh 12.69. Khong
thi gian in hnh l bao nhiu in p ra ca
LM741 chuyn t - 8V n + 8V p ng theo tn
hiu vo xung?
BI TP NNG CAO
74. Hy thit k mt mch khuych i khng o c h s khuych i in p vng-kn thch hp
l 150 v tr khng vo thp nht l 100MO s dng op-amp 741. Thit k bao gm c vic b
dng phn cc.
75. Hy thit k mt mch khuych i o s dng op-amp 741. H s khuych i in p cn phi
t c l 68 5% v tr khng vo cn phi xp x 10kO. Thit k bao gm c vic b dng
phn cc.
-204-
76. Hy thit k mt mch
khuych i khng o vi
tn s ti hn trn, f
cu
l
10kHz s dng op-amp 741.
Cc ngun cung cp dc l
15V. Tham kho c tuyn
hnh 12.70. Thit k bao gm
c vic b dng phn cc.
77. Theo mch c thit k bi tp 76, xc nh in tr ti nh nht nu dao ng in p
ra thp nht cn phi c l 10V. Tham kho cc c tuyn ca phiu s liu hnh 12.71.
78. Hy thit k mch khuych i o bng op-amp 741 nu h s khuych i in p nh mc l
50 v cn phi c rng bng tn l 20kHz. Bao gm c vic b dng phn cc.
79. H s khuych i vng-kn ln nht l bao nhiu
m c th nhn c vi op-amp 741 nu rng
bng tn yu cu khng thp hn 5kHz?
-205-
BI TP B SUNG PHN OP-AMP
Vi cc bi tp t 80 n 89, hy xc nh mc in p ra v
o
theo in p vo cho mi
mch th hin hnh v tng ng.
80.
81.
82.
83.
84.
-206-
85.
86.
87.
88.
89.
-207-
90. Da vo m hnh op-am l tng v gii c t s ca h s khuych i v
o
/v
i
cho mi mch
hnh P8.11.
91. Tnh in p ra, v
o
theo cc tn hiu vo ca cc mch hnh P8.12. S dng m hnh tnh
ton bng op-am l tng.
Cc bi tp t 92 n 95, hy thit k mch khuych i bng op-amp c c cc quan h
th hin theo mi phng trnh.
92. v
O
= v
1
+ 10v
2
30v
a
100v
b
-208-
93. v
O
= 8v
1
+ 8v
2
4v
a
9v
b
94. v
O
= 6v
1
+ 8v
2
3v
a
12v
b
95. v
O
= 3v
1
+ v
2
+ 6v
3
4v
a
5v
b
-209-
96. Cho mch nh hnh P8.13, tr s no ca
2
v cn phi c
to ra 500 mV
o
v = khi
1
40 mV v = ;
1
50 k R = O ; v
2
150 k R = O? Tr s ca dng ra
L
i
l bao nhiu, theo
cc iu kin cho trn v 4 k
L
R = O?
97. B chuyn i s - tng t [digital-to-analog (D/A)] c th c
thit k bng cc op-amp nh hnh P8.14. S dng phng php
thit k mch tng bng op-amp thit k b bin i D/A 6-bit
c R
min
= 10kO. Chn V
CC
thch hp l bao nhiu nu mc logic 1
tng ng vi 0,2V?
Gi : S tng ng thp phn ca s nh phn a
5
a
4
a
3
a
2
a
1
a
0
,
trong a
i
c gi tr hoc bng 0 hoc 1, l
N = a
5
2
5
+ a
4
2
4
+
a
3
2
3
+
a
2
2
2
+
a
1
2
1
+ a
0
2
0
= 32a
5
+ 16a
4
+ 8a
3
+
4a
2
+ 2a
1
+ a
0
-210-
98. Thit k mch my tnh tng t bng op-amp gii phng trnh sau:
9 3
dx
x
dt
+ =
S dng hai mch khuych i tnh tng v mt mch tch phn trong thit k
99. Thit k mch my tnh tng t bng op-amp gii hai phng trnh vi phn bc nht sau:
1 1 1
( )
dx
a x +b y f t
dt
+ =
2 2 2
( )
dy
b y +a x f t
dt
+ =
S dng hai mch op-amp tch phn hai mch khuych i tnh tng v trong thit k.
-211-
100. Cc h s khuych i kiu vi sai v kiu-chung ca
b khuych i hnh 9.3, l bao nhiu, nu
1 2
5 k
C C
R R = = v 20 k
EE
R = ? Cho 12 V
CC
V = ;
0, 7 V
BE
V = ; 26 mV
T
V = ; v 12 V
EE
V = .
[p s: 0,125
c
A = ; 53,8
d
A = ]
101. Cc h s khuych i vi sai v kiu-chung ca b khuych
i hnh 9.6, l bao nhiu nu
1 2
5 k
C C
R R = = ;
15 V
CC
V = ; 15 V
EE
V = ; 0, 7 V
BE
V = ; 26 mV
T
V = ? Gi s
rng
TH EE
V R l ngun dng-hng vi
TH
10 k R = .
[p s: 0, 25
c
A = ; 69
d
A = ]
102. i vi ngun dng-hng th hin hnh 9.5, hy xc nh
E
R ,
1
R , v
2
R , trong 10 V
EE
V = ;
2 mA
EE
I = ; v 0, 7 V
BE
V = . Cng vi gi thit rng 26 mV
T
V = v | = 200.
[p s: 2, 33 k
E
R = ;
1
93 k R = ;
2
93 k R = ]
-212-
103. Hy thit k b ngun dng Widlar nhn c mc
dng khng i l 50 A. in p ngun l 20 V, v s
dng mc dng tham chiu l 4-mA. Hy xc nh tr s
in tr yu cu v
TH
R ca ngun dng khi
o
r (ca
transistor) = 50 kO; 0, 7 V
BE
V = ; v 26 mV
T
V = .
[p s:
1 2 TH
4,83 k; 2, 28 k; 269 k. R R R = = = ]
104. Hy thit k b ngun dng Wilson cung cp mc dng
100 A khi c 15 V
CC
V = . S dng cc transistor c | =
100; 0, 7 V
BE
V = ; v 26 mV
T
V = . Hy xc nh
TH
R khi
o
r ca transistor l 15 kO.
[p s:
REF 1 TH
100 A; =136 k; = 750 k. I R R = ]
-213-
105. Hy thit k mch dch mc (hnh 9.15b) chuyn i
C
V t 6 V v mc 2 V c mc in p
tng thch vi mch khuych i CE tip theo. S dng mch khuych i CE c 5 k
C
R =
v ngun dng l 4 mA vi 15 V
CC
V = v 15 V
EE
V = . S dng cc transistor c | = 200; v
0, 7 V
BE
V = .
[p s:
'
1 2
805 ; = 2,13 k; =110 k; = 69 k.
E E
R R R R = O ]
-214-
106. Thit k mch khuych i bng op-amp 741 c in p ra cho bi phng trnh,
v
O
= 10v
1
+ 6v
2
+ 4v
3
in tr tng ng ti cc u vo m v dng l 10kO. Xc nh tr s ca mi in tr,
rng bng tn, in tr vo theo mi u vo ca b khuych i, v in tr ra ca mch.
107. Thit k mch khuych i bng op-amp 741 c in p ra cho bi phng trnh,
v
O
= - 10v
1
- 5v
2
- 4v
3
in tr tng ng ti cc u vo m v dng l 10kO. Xc nh tr s ca mi in tr,
rng bng tn, in tr vo theo mi u vo ca b khuych i, v in tr ra ca mch.
108. Thit k mch khuych i bng op-amp 741 c in p ra cho bi phng trnh,
v
O
= 10v
1
+ 6v
2
- 3v
3
4v
4
in tr tng ng ti cc u vo m v dng l 10kO. Xc nh tr s ca mi in tr,
rng bng tn, in tr vo theo mi u vo ca b khuych i, v in tr ra ca mch.
-215-
i vi cc bi tp t 109 n 118, l thit k cc mch bng op-amp 741 to ra in p ra,
v
O
, t cc in p vo: v
1
, v
2
, v v
3
. Phi m bo cn bng cc dng phn cc trong mi thit k.
i vi mi thit k, hy tnh in tr vo theo tng u vo, in tr ra, v rng bng tn.
in tr vo cn phi t nht l 100MO, cn rng bng tn cn phi ln hn 20kHz. C th
phi s dng nhiu op-amp trong mt s thit k.
109. v
O
= 700v
1
110. v
O
= v
1
/700
111. v
O
= - 700v
1
-216-
112. v
O
= - v
1
/700
113. v
O
= v
1
v
2
114. v
O
= 10v
1
v
2
115. v
O
= v
1
10v
2
116. v
O
= v
1
+ 700v
2
-217-
117. v
O
= - (v
1
+ 700v
2
)
118. v
O
= v
1
- 2v
2
+ 3v
3
Cc bi tp t 119 n 124 l thit k cc h thng bng nhiu op-amp 741 c in p ra, v
o
,
t cc in p vo, v
1
, v
2
, v v
3
. in tr vo i vi mi u vo cn phi l 100MO hoc ln
hn, v cc u vo s khng c ghp trc tip vi u vo khc. i vi mi thit k, hy
tnh R
in
, R
out
, v rng bng tn. Cc mch cn phi c rng bng tn nh nht l 50kHz.
119. v
O
= 3(v
1
+ v
2
)
120. v
O
= 3(v
1
- v
2
)
-218-
121. v
O
= 1000v
1
- 300v
2
122. v
O
= 500v
1
- 50v
2
123. v
O
= 70v
1
1
7
v
2
124. v
O
= 100v
1
+ 50v
2
-219-
BI TP V PHN VI MCH S
Hy xc nh trng thi ca mi transistor v lp bng trng thi cho mi mch tng ng vi
cc bi tp t 125 n 131. Cho bit tn gi ca cng theo chc nng logic tng ng.
125. Hnh P15.6.
126. Hnh P15.7.
127. Hnh P15.8.
-220-
128. Hnh P15.9.
129. Hnh P15.10.
130. Hnh P15.11.
131. Hnh P15.12.
-221-
TM TT NI DUNG V CC THYRISTOR & MCH
5-1. Cc thyristor l cc cu kin c ch to t bn lp bn dn (pnpn).
Cc thyristor bao gm diode 4-lp, SCR, LASCR, diac, triac, v PUT.
Diode 4-lp l mt loi thyristor s dn khi in p trn hai in cc vt qu in th nh
thng.
5-2. B chnh lu c iu khin bn dn (SCR) c th c kch dn bng xung cng v chuyn
sang ngng dn bng cch gim dng anode xung di mc dng duy tr quy nh.
nh sng nh mt ngun kch khi trong SCR c kch dn-bng nh sng (LASCR).
5-3. Diac c th dn dng in theo c hai chiu v c chuyn sang dn khi in p nh thng
b vt qu. Diac s chuyn sang ngng dn khi dng gim thp xung di gi tr duy tr.
Triac tng t diac l cu kin hai chiu v c th c chuyn sang dn bng xung cng v
s dn theo mt chiu ty thuc cc tnh in p ngang qua hai in cc anode.
5-4. B chuyn mch c iu khin bng bn dn (SCS) c hai in cc cng v c th chuyn
sang dn bng xung cng cathode v chuyn sang ngng dn bng xung ti cng anode.
5-5. T s dng - ni ti ca transistor mt tip gip (UJT) s quyt nh in p lm cho UJT
chuyn sang dn.
5-6. UJT kh trnh (PUT) c th c lp trnh trc chuyn sang ti mc in p cng
anode mong mun.
B1
BB
r'
r'
q = (5-1) T s dng-ni ti.
P BB pn
V V V q = + (5-2) in p im-nh ca UJT.
-222-
CU HI v thyristor v cc cu kin khc
1. Mt thyristor c
(a) hai tip gip pn (b) ba tip gip pn
(c) bn tip gip pn (d) ch c hai in cc
2. Cc loi thyristor thng dng gm
(a) BJT & SCR (b) UJT & PUT (c) FET & triac (d) diac & triac
3. Diode 4-lp s chuyn sang dn khi in p anode so vi cathode vt qu
(a) 0,7V (b) in p trn cng
(c) in p nh thng-thun (d) in p chn-thun
4. Khi ang dn, diode 4-lp c th c chuyn sang ngng bng cch
(a) gim dng thp hn gi tr no (b) ngt in p anode
(c) gm c (a) v (b) (d) c (a) v (b) u sai
5. SCR khc vi diode 4-lp bi v
(a) SCR c cc cng (b) SCR khng phi thyristor
(c) SCR khng c 4-lp (d) SCR khng th chuyn sang dn v ngng
6. SCR c th c chuyn sang ngng dn bng cch
(a) chuyn mch lc (b) xung m trn cng
(c) ngt dng anode (d) gm c (a), (b), v (c)
(e) gm (a) v (c)
7. vng chn-thun, SCR l
(a) c phn cc-ngc (b) trng thi ngng dn [off ]
(c) trng thi dn [on] (d) ti im nh thng
8. Gi tr dng gi c quy nh ca mt SCR c ngha l
(a) cu kin s chuyn sang dn khi dng anode vt qu gi tr ny
(b) cu kin s chuyn sang ngng dn khi dng anode gim di gi tr ny
(c) cu kin c th b hng nu dng anode vt qu gi tr ny
(d) dng cng cn phi bng hoc vt qu gi tr ny chuyn cu kin sang dn
9. Diac l
(a) mt loi thyristor (b) cu kin c 2 in cc, dn dng hai chiu
(c) ging nh 2 diode 4-lp mc ngc chiu nhau (d) gm c (a), (b), v (c)
10. Triac l
(a) ging nh SCR, dn dng hai chiu (b) cu kin 4-in cc
(c) khng phi thyristor (d) gm c (a), v (b)
-223-
11. SCS khc vi SCR bi v
(a) SCS khng c cc cng (b) dng gi ca cc SCS thp hn
(c) SCS c th lm vic vi mc dng cao hn nhiu. (d) SCS c hai cc cng
12. SCS c th c chuyn sang dn bng cch
(a) tng in p anode vt qu in p nh thng-thun
(b) a xung dng vo cng cathode
(c) a xung m vo cng anode .
(d) hoc (b) hoc (c)
13. SCS c th c chuyn sang ngng dn bng cch
(a) a xung m vo cng cathode v xung dng vo cng anode
(b) gim dng anode xung mc thp hn tr s dng gi
(c) c (a) v (b) .
(d) a xung dng vo cng cathode v xung m vo cng anode
14. c tnh no sau y khng phi l c tnh ca UJT
(a) t s dng ni ti (b) in tr m
(c) in p im-nh (d) dn in hai bn
15. PUT l cu kin
(a) rt ging vi UJT (b) khng phi l thyristor
(c) kch dn v ngng bng in p cng-anode (d) khng phi cu kin 4-lp
16. IGBT thng c dng trong
(a) cc ng dng cng sut thp (b) cc ng dng cao tn
(c) cc ng dng in p cao (d) cc ng dng dng thp
17. i vi phototransistor, dng base l
(a) thit lp bng in p phn cc (b) t l thun vi nh sng chiu vo
(c) t l nghch vi nh sng chiu vo (d) tt c u sai
18. Trong cp si-quang, nh sng truyn thng qua
(a) li (b) lp v mng bn trong
(c) tng (d) lp v ngoi
19. Nu gc ti ca tia sng c ln hn so vi gc ti hn, th nh sng s
(a) b hp th (b) b phn x
(c) c khuych i (d) b khc x
20. Gc ti hn ca vt liu phn x c xc nh bi
(a) hp th (b) lng phn x
(c) ch s khc x (d) suy gim
-224-
BI TP v cu kin h Thyristor
BI TP C BN
Mc 11-1 C bn v cu kin 4-lp
1. Diode 4-lp trong mch hnh 11.68, c phn cc hot ng vng
dn-thun. Xc nh dng anode vi V
BR(F)
= 20V; V
BE
= 0,7V; v V
CE(sat)
=
0,2V.
2. (a) Xc nh in tr ca mt diode 4-lp vng chn-thun nu c V
AK
= 15V v I
A
= 1A.
(b) Nu in p chn-thun l 50V, th V
AK
cn phi c tng ln mc bao nhiu chuyn
diode vo vng dn-thun?
Mc 11-2 Chnh lu c iu khin (SCR)
3. Hy gii thch nguyn l hot ng ca SCR di dng mch tng ng bng transistor.
4. Bin tr trong mch hnh 11.69, cn phi c iu chnh n gi tr no
chuyn SCR sang ngng dn? Cho bit I
H
= 10mA v V
AK
= 0,7V.
Mc 11-3 Cc mch ng dng ca SCR
5. Hy gii thch c th sa i mch hnh 11.15, nh th no
SCR s c kch khi v dn trong bn k m ca tn hiu vo.
-225-
6. Chc nng ca cc diode D
1
v D
2
trong mch hnh 11.19 l g?
7. V dng sng ca V
R
ca mch hnh 11.70, theo
cc dng sng vo lin quan cn phi c cho.
Mc 11-4 Diac v Triac
8. V dng sng dng
in ca mch hnh
11.71.
Diac c in th vt
qu nh thng l
20V; I
H
= 20mA.
9. Lp li bi tp 8 cho mch triac hnh 11.72. in p nh
thng l 25V v I
H
= 1mA.
Mc 11-5 B chuyn mch iu khin bng bn dn - SCS
10. Gii thch nguyn l hot
ng bt-ng v bt-m ca
SCS di dng mch tng
ng transistor ca SCS.
-226-
11. Tn gi cc in cc ca SCS.
Mc 11-6 Transistor mt tip gip - UJT
12. Mt UJT c r
B1
= 2,5kO v
r
B2
= 4kO. T s dng ni
ti, q l bao nhiu?
13. Hy xc nh in p im-
nh ca UJT bi tp 12
nu V
BB
= 15V.
14. Tnh khong cc gi tr ca R
1
trong mch hnh 11.73,
m bo bt-ng v bt-m
chnh xc ca UJT.
q = 0,68; V
V
= 15mA;
I
V
= 15mA; I
P
= 10A;
v V
P
= 10V.
Mc 11-7 Transistor mt tip gip kh trnh - PUT
15. in p ti anode (V
A
) l bao nhiu s lm cho mi PUT mch hnh 11.74, bt u chuyn sang
dn in?
16. V dng sng dng in ca mi mch hnh 11.74, khi c in p sin 10V nh ti anode. B
qua in p thun ca PUT.
17. V dng sng in p
ngang qua R
1
trong
mch hnh 11.75,
theo mi lin quan
vi dng sng vo.
-227-
Mc 11-8 BJT c cng cch ly - IGBT
18. Gii thch ti sao IGBT c in tr vo rt cao.
19. Gii thch ti sao dng collector vt qu c th gy ra trng thi cht-ln trong mt IGBT.
Mc 11-9 Quang transistor - Phototransistor
20. Mt phototransistor trong mch c |
DC
= 200. Nu I
= 100A, dng
collector l bao nhiu?
21. Xc nh in p ra ca mch
hnh 11.76, (a) khi ngun
sng tt [OFF], v (b) khi
ngun sng m [ON] (khi
gi thit transistor bo ha).
22. Xc nh dng emitter trong mch photodarlington hnh
11.77, nu i vi mi 1 lm/m
2
ca nh sng chiu vo, s
to ra 1A ca dng base trong Q
1
.
Mc 11-10 SCR kch hot bng nh sng - LASCR
23. Kho st mch hnh 11.78, gii
thch chc nng v nguyn l hot
ng c bn ca mch.
-228-
24. Xc nh dng sng
in p ngang qua R
K
trong mch hnh
11.79.
Mc 11-11 Cc b ghp quang Optical Couplers
25. Mt b ghp quang thc t c t s truyn dng in l 30%. Nu dng vo l 100mA, th dng
ra l bao nhiu?
26. B ghp quang trong mch hnh 11.80, cn phi cung cp t nht 10mA n ti bn ngoi. Nu
t s truyn dng in l 60%, th dng cn phi c cung cp n u vo l bao nhiu?
Mc 11-12 Si quang Fiber Optics
27. Mt tia sng truyn va p trong li ca cp si-quang ti gc ti l 30. Nu gc ti hn ca li
l 15, th tia sng s b phn x hay khc x?
28. Xc nh gc ti hn ca cp si-quang nu li c ch s khc x l 1,55 v lp v mng c ch
s khc x l 1,25.
-229-
BI TP NG DNG H THNG HOT NG
29. Trong mch
iu khin-tc
ng c
hnh 11.64,
mc in p
cng ca PUT
no s lm cho
ng c in
quay ti tc
nhanh nht:
0V; 2V; hay
5V?
30. SCR trong mch iu khin-tc ng c chuyn sang dn sm hn hay
mun hn trong chu k ac nu gim tr s in tr ca bin tr?
31. Gii thch tc ng SCR khi tng in p trn cng ca PUT trong mch
iu khin-tc ng c.
BI TP NNG CAO
32. Xt mch bo v qu-in p bng
SCR nh hnh 11.20. Vi ngun
cung cp c in p ra dc + 12V, xc
nh tr s ca cc cu kin ca mch
c bo v nu in p ra ca
ngun cung cp vt qu + 15V.
Cu ch c dng nh mc l 1A.
-230-
33. Hy thit k mt mch by in p [crowbar] bng SCR bo v cc mch in t khi vic
tng in p t b ngun cung cp vt qu 6,2V.
34. Hy thit k mch dao ng tch thot [relaxation oscillator] to ra tn s tn hiu l 2,5kHz
bng UJT c q = 0,75 v in p y l 1V. Mch cn phi lm vic t ngun dc + 12V. S dng
cc tr s thit k l I
V
= 10mA v I
P
= 20A.