TRANSISTOR 1 / 15

Chng 3. TRANSISTOR
1. Transistor BJT:
1.1. Gii thiu v c tnh hot ng:
Transistor BJT c pht minh nhng nm cui thp k 1940 phng th nghim Bell, M [1]. BJT l
linh kin bn dn 3 lp N-P ghp li to thnh 3 cc (3 chn): cc pht E (emitter), cc nn B (base) v
cc thu C (collector). Theo cch ghp, ta c 2 loi transistor BJT: N-P-N v P-N-P c k hiu nh trn
Hnh 3.1

(a) NPN

(b) PNP



(c) Hnh dng

Hnh 3.1- K hiu, cu to, hnh dng ca Transistor BJT
V c tnh hot ng, ty theo c tnh in ti cc chn E, C, B m transistor BJT c 3 ch hot
ng khc nhau: ngng dn (cut-off), khuch i (amplifier), bo ha (saturation). Ta xt hot ng ca
transistor N-P-N nh Hnh 3.3
- Trong ch ngng dn: in p VBE nh hn in p dn VF 0.7V lm dng IB 0; hoc in
p VCE 0V lm dng IC 0. Khi ny khng c dng in IC v IB v BJT xem nh kha in t
m.
- Trong ch khuch i: in p VBE ln t mc dn VF 0.7V. Dng in IC t l vi dng
IB : IC = .IB vi VCE VBE
- Trong ch bo ha: in p VBE ln t mc dn VF 0.7V. Dng IB ln lm dng IC
khng th gi tuyn tnh v IC t mc ti a (
|
C
B
I
I > ). Lc ny VCE t gi tr bo ha rt b
(VCE(SAT) 0.2V) v BJT xem nh kha in t ng.
Trong hnh l mch th nghim c tnh hot ng (hay cn gi l c tnh ng ra) cho hai loi BJT.
th c tnh ng ra l th nu ln mi quan h gia VCE v IC di s thay i ca IB (Hnh 3.4). Ngoi
ra, ngi ra cn kho st mi quan h gia VBE v IC ca BJT, gi l c tnh truyn (Hnh 3.4)

TRANSISTOR 2 / 15

Hnh 3.2 M hnh th nghim c tnh ng ra ca BJT

Hnh 3.3 Cc min hot ng c tnh ng ra ca BJT [1]

Hnh 3.4 c tnh truyn ca BJT [1]
TRANSISTOR 3 / 15
1.2. Phn tnh mch transistor BJT
V cc dng mch BJT ng ngt ti, ta c mt s cch mc nh hnh. Xt trng hp transistor NPN, ta
c c trng ca cc dng mch nh trn bng. Trong hot ng ng ngt ti (ON-OFF), transistor
NPN thng mc dng E-chung v transistor PNP thng mc dng C-chung.
Thng s NPN C-chung NPN E-chung NPN B-chung
li khuch i dng Trung bnh (hng chc) n v (1) Cao (hng trm)
li khuch i p Cao (hng trm) Cao (hng trm) n v (1)
li khuch i cng sut Rt cao (hng nghn) Cao (hng trm) Cao (hng trm)
lch phase ng vo ng ra 180
0
0
0
0
0


(a) Cc E chung

(b) Cc C chung

(c) Cc B chung
Hnh 3.5 Cc mch ng ngt ti vi transistor NPN

(a) Cc E chung

(b) Cc C chung

(c) Cc B chung
Hnh 3.6 - Cc mch ng ngt ti vi transistor PNP
C hai loi tnh ton chnh cho mch BJT: Bi ton thun tm c trng dng, p v ch hot ng
ca BJT khi bit in tr phn cc v bi ton ngc (bi ton thit k) tm cc gi tr in tr phn cc
cho BJT khi bit yu cu dng, p v ch phn cc.
phn tch mch Transistor BJT, ta theo qui trnh nh sau:
- Dng m hnh tng ng transistor nh Hnh 3.7, Hnh 3.8.
- Vit cc phng trnh cn bng in cc B-E v cc C-E ca BJT tm c trng dng p
VBE, IB, IC, VCE
- T bin lun tm ra ch hot ng ca BJT.
TRANSISTOR 4 / 15

(a) Dng in

(b) M hnh khuch i dng

(c) M hnh phn tch mch
Hnh 3.7 M hnh tng ng transistor NPN

(a) Dng in

(b) M hnh khuch i dng

(c) M hnh phn tch mch
Hnh 3.8 M hnh tng ng transistor PNP
V d 1: Cho mch phn cc transistor nh hnh. BJT l loi 2SC1815 c thng s nh trong bng. Tnh
gi tr IB, IC, cng sut qua transistor, hiu sut (cng sut ti / cng sut ton mch)
(a) Bit in tr phn cc Rb = 10k, Rc = 1k, Vcc = 5V, Vbb = 3V
(b) Bit in tr phn cc Rb = 50k, Rc = 1k, Vcc = 5V, Vbb = 3V
VBB
Q1
Rb
Rc
VCC

Hnh 3.9 Mch phn cc BJT NPN n gin
Thng s Gi tr
hFE 100
VCE(SAT) 0.1V
VBE 1V
IC(MAX) 150mA
IB(MAX) 50mA
PMAX 400mW
(a) Ta c phng trnh ri p qua nhnh Rb:
BE B B BB
V R I V + = => mA
k R
V V
I
B
BE BB
B
2 . 0
10
1 3
=

=
Gi s BJT hot ng trong ch bo ha: VCE = VCE(SAT) = 0.1V. Phng trnh ri p qua nhnh Rc:
CE C C CC
V R I V + = => mA
k R
V V
I
C
CE CC
C
9 . 4
1
1 . 0 5
=

=
Kim tra li ( mA mA x I h I
B FE K C
20 2 . 0 100
) (
= = = ) > IC(BH) = 4.9mA. Vy gi thit hp l. T :
IB = 0.2mA ; IC = 4.9mA , PBJT = IB.VBE + IC.VCE = 0.2x1 + 4.9x0.1 = 0.69mW
Cng sut ti: mW mA k I R P
C C RC
01 . 24 ) 9 . 4 .( 1 .
2 2
= O = =
Cng sut ton mch P = PRB + PRC + PBJT = = + + +
CE C BE B C C B B
V I V I I R I R
2 2
. . 25.1mW
TRANSISTOR 5 / 15
Hiu sut = = =
1 . 25
01 . 24
P
P
RC
q 95.66 %
(b) Ta c phng trnh ri p qua nhnh Rb:
BE B B BB
V R I V + = => mA
k R
V V
I
B
BE BB
B
04 . 0
50
1 3
=

=
Gi s BJT hot ng trong ch bo ha: VCE = VCE(SAT) = 0.1V. Phng trnh ri p qua nhnh Rc:
CE C C CC
V R I V + = => mA
k R
V V
I
C
CE CC
C
9 . 4
1
1 . 0 5
=

=
Kim tra li ( mA mA x I h I
B FE K C
4 04 . 0 100
) (
= = = ) < IC(BH) = 4.9mA. Vy gi thit khng hp l. BJT
hot ng trong min khuch i. IC = 4mA. V V k mA R I V V
C C CC CE
1 1 . 4 5 = = =
Cng sut ca PBJT = IB.VBE + IC.VCE = 0.04x1 + 4x1 = 4.04mW
Cng sut ti: mW mA k I R P
C C RC
16 ) 4 .( 1 .
2 2
= O = =
Cng sut ton mch P = PRB + PRC + PBJT = = + + +
CE C BE B C C B B
V I V I I R I R
2 2
. . 22.04mW
Hiu sut = = =
04 . 22
16
P
P
RC
q 72.6 %
* Ngoi ra, i vi mch phn cc RB gm 2 in tr chia p nh Hnh 3.10(a), ta dng m hnh tng
ng Threvin nh Hnh 3.10(b)
2 1
1
R R
R
V V
BB EQ
+
=
2 1
2 1
R R
R R
R
EQ
+
=

(a) in tr phn cc B chia p

(b) M hnh tng ng Threvin
Hnh 3.10 M hnh tng ng Threvin cho in tr phn cc BJT
V d 2: Cho mch kch ti RC nh Hnh 3.9. in p cp cho ti 6V, dng qua ti 100mA. Tn hiu
iu khin VBB c cp t mt mch s c thng s nh trong bng.
(a) Tnh ton RB v chn la BJT BJT hot ng ch bo ha vi h s bo ha a = 2.5.
Tnh ton phi m bo h s an ton n = 1.2
(b) Vi mch chn cu (a), mch kch VBB dng xung vi thi gian chuyn mch khi ng v
m l 1mS, thi gian ng bo ha TSAT = T/2 . Hi BJT ng ngt tn s ti a bao nhiu ?
TRANSISTOR 6 / 15
Thng s
(1)

Gi tr
Ghi ch
MIN TYP MAX
in p ng ra mc cao VOH 2.4V 3.6V - VCC = MIN, VIL = 0.8V, IOH = 0.4 mA
in p ng ra mc thp VOL - 0.2V 0.4V VCC = MIN, VIH = 2V, IOL = 16 mA
Dng in ng ra mc cao IOH - - 0.4mA
Dng in ng ra mc thp IOL - - 16mA
Dng in ng ra khi ngn mch IOS 20mA - 55mA VCC = MAX
Dng ti IRC = 100mA, h s an ton n=1.2 => dng ti a BJT IC(MAX) = 1.2x100mA = 120mA. Chn
Transistor 2SC1815 ca TOSHIBA c thng s nh trn bng:
B qua ri p VCE(SAT) = 0.1V, cp ngun VCC = 6V:
Ta c: mA
mA
x
h
I
a I
FE
C
B
5 . 2
100
100
5 . 2 . = = =
T phng trnh ri p qua nhnh Rb:
BE B B BB
V R I V + =
=>
mA I
V V
R
B
BE BB
B
5 . 2
1 6 . 3
=

= = 1.04k => Chn RB = 1k (lc IB = 2.6mA)

Tnh ton li gi tr mch v kim tra cng sut BJT:
Cng sut BJT: PBJT = IB.VBE + IC.VCE = 2.5 x1 + 100x0.1 = 12.5mW << PMAX
Thng s Gi tr
hFE 100
VCE(SAT) 0.1V
VBE 1V
IC(MAX) 150mA
IB(MAX) 50mA
PMAX 400mW

(b) Khi BJT h, coi nh khng c dng qua BJT (dng r 1A).
th ng ngt ti nh hnh. Cng sut tc thi p = u.i l hm
bc 2 theo thi gian t. tnh ton n gin, ta c lng hm P
theo hnh tam gic (xp x ng cong hm bc 2 thnh ng
thng bc 1)
Cng sut ca BJT trong mt chu k:
(

+
|
|
.
|

\
|
+

~
+ + =
SAT RC SAT CE
RC
SAT CE
SAT CE CC
OFF SAT ON T
T I V ms
I
V
V V
T
P P P P
. 1 .
2 2
. 2
1
) ( ) (
) (

PT = ( )
n
P
T
T
MAX
SAT
s +10 305
1
=> 4575 . 0
33 . 33
>
SAT
T
T ms
Vy tn s khong f 2.2kHz
V
CE
I
C
V
CE(SAT)
V
CC
I
RC
O
t
t
1ms
P
O
O

Bi tp tnh ton:
1. Cho mch phn cc transistor nh hnh 1.1 v 1.2 bn di. Tnh gi tr IB, IC, cng sut qua
transistor, hiu sut (cng sut ti / cng sut ton mch). Transistor s dng trong mch l 2SC828
(a) Bit in tr phn cc Rb = 10k, Rc = 1k, Vcc = 6V, Vbb = 3.3V
(b) Bit in tr phn cc Rb = 68k, Rc = 1k, Vcc = 6V, Vbb = 3.3V

1
Theo datasheet SN5400 ca Texas Instruments
TRANSISTOR 7 / 15
VBB
Q1
Rb
Rc
VCC

1.1
VBB
VCC
Rb
Re
Q1

1.2
Q2
Rb
Vbb
VEE
Re

1.3
Vbb
VEE
Re
Q2
Rb

1.4
2. Lp li bi tp 1 vi transistor s dng trong mch l 2SD468 v cc thng s:
(a) Bit in tr phn cc Rb = 10k, Rc = 1k, Vcc = 6V, Vbb = 3.3V
(b) Bit in tr phn cc Rb = 100k, Rc = 1k, Vcc = 6V, Vbb = 3.3V
3. Lp li bi tp 1 vi transistor s dng trong mch l TIP122 v cc thng s:
(a) Bit in tr phn cc Rb = 10k, Rc = 100, Vcc = 12V, Vbb = 5V
(b) Bit in tr phn cc Rb = 220k, Rc = 100, Vcc = 12V, Vbb = 5V
4. Lp li bi tp 1 vi transistor s dng trong mch l 2N3055 v cc thng s:
(a) Bit in tr phn cc Rb = 120, Rc = 10, Vcc = 24V, Vbb = 5V
(b) Bit in tr phn cc Rb = 330, Rc = 10, Vcc = 24V, Vbb = 5V
5. Cho mch phn cc transistor nh hnh 1.3 v 1.4. Tnh gi tr IB, IC, cng sut qua transistor, hiu
sut (cng sut ti / cng sut ton mch). Transistor s dng trong mch l 2SA1015
(a) Bit in tr phn cc Rb = 10k, Rc = 1k, VEE = 5V, Vbb = 3.3V
(b) Bit in tr phn cc Rb = 100k, Rc = 1k, VEE = 5V, Vbb = 3.3V
6. Lp li bi tp 5 vi Transistor s dng trong mch l 2SA564
(a) Bit in tr phn cc Rb = 10k, Rc = 1k, VEE = 6V, Vbb = 3.3V
(b) Bit in tr phn cc Rb = 100k, Rc = 1k, VEE = 6V, Vbb = 3.3V
7. Lp li bi tp 5 vi Transistor s dng trong mch l TIP127
(a) Bit in tr phn cc Rb = 10k, Rc = 1k, VEE = 12V, Vbb = 5V
(b) Bit in tr phn cc Rb = 220k, Rc = 1k, VEE = 12V, Vbb = 5V
8. Lp li bi tp 5 vi Transistor s dng trong mch l MJ2955
(a) Bit in tr phn cc Rb = 120, Rc = 10, VEE = 24V, Vbb = 5V
(b) Bit in tr phn cc Rb = 330, Rc = 10, VEE = 24V, Vbb = 5V
9. Trong mch hnh 9.1, transistor s dng l 2SC828, Rb=68k; Rc=1k; Vcc=6V; tn hiu
Vin=3.sin(120t) [V]. V th ng vo ng ra ca in p trn cng mt trc thi gian.
TRANSISTOR 8 / 15
Vin
Q1
Rb
Rc
Vout
VCC

(9.1)
Vout
Vin
VCC
Rb
Re
Q1

(9.2)
Q2
Rb
Vbb
VEE
Vout
Re

(9.3)
Vbb
VEE
Vout
Re
Q2
Rb

(9.4)
10. Lp li bi tp 9 vi mch 9.2
11. Lp li bi tp 9 vi mch 9.3 s dng BJT 2SA1015 VEE =6V.
12. Lp li bi tp 9 vi mch 9.4 s dng BJT 2SA1015 VEE =6V.
13. Bi tp thit k (4 dng phn cc) trong min ng ngt
Cho mch kch ti RC nh hnh 1.1, 1.2. in p cp cho ti 6V, dng qua ti 100mA. Tn hiu iu
khin VBB c cp t mt mch s c thng s nh trong bng.
(a) Tnh ton RB v chn la BJT BJT hot ng ch bo ha vi h s bo ha a = 2.5.
Tnh ton phi m bo h s an ton n = 1.2
(b) Vi mch chn cu (a), mch kch VBB dng xung vi thi gian chuyn mch khi ng v
m l 1mS, thi gian ng bo ha TSAT = T/2 . Hi BJT ng ngt tn s ti a bao nhiu ?
14. Bi tp thit k (4 dng phn cc) trong min ng ngt
Cho mch kch ti RC nh hnh 1.3, 1.4. in p cp cho ti 6V, dng qua ti 100mA. Tn hiu iu
khin VBB c cp t mt mch s c thng s nh trong bng.
(a) Tnh ton RB v chn la BJT BJT hot ng ch bo ha vi h s bo ha a = 2.5.
Tnh ton phi m bo h s an ton n = 1.2
(b) Vi mch chn cu (a), mch kch VBB dng xung vi thi gian chuyn mch khi ng v
m l 1mS, thi gian ng bo ha TSAT = T/2 . Hi BJT ng ngt tn s ti a bao nhiu ?
15. Thit k mch li ng c DC (c thng s nh trong bng 1) s dng BJT. Vi tn hiu iu khin
VBB c cp t mt mch s c thng s trong bng 2.1. Yu cu iu khin cho trong bng 3.1. H s
bo ha 2.5 v h s an ton n=1.3
(a) V mch nguyn l
(b) Chn la, tnh ton gi tr linh kin, dng, p trong mch nguyn l chng t mch hot
ng tt, khng h hng linh kin.
(c) Tnh ton tn s ng ngt ti a ca mch nu thi gian chuyn mch khi ng v khi m l
10s, thi gian dn bo ha TSAT = T/2
(d)
*
M phng li mch thit k bng phn mm kim chng.




TRANSISTOR 9 / 15
Bng 1 Thng s ng c

Bng 2.1 Thng s chn iu khin 1
Thng s
Gi tr
MIN TYP MAX
in p ng ra mc cao
VOH
2.4V 4.5V -
in p ng ra mc thp
VOL
- 0.2V 0.4V
Dng in ng ra mc
cao IOH
- - 10mA
Dng in ng ra mc
thp IOL
- - 16mA
Dng in ng ra khi
ngn mch IOS
20mA - 55mA
Bng 3.1 Yu cu iu khin 1
Thng s Gi tr
Ngun cp ng c 24V
Chn iu khin mc cao ng c quay
Chn iu khin mc thp
Khng c in qua
ng c
Chn iu khin th ni
(tng tr cao)
Khng c in qua
ng c

Bng 2.2 Thng s chn iu khin 2
Thng s
Gi tr
MIN TYP MAX
in p ng ra mc cao
VOH
2.4V 4.5V -
in p ng ra mc thp
VOL
- 0.2V 0.4V
Dng in ng ra mc
cao IOH
- - 2mA
Dng in ng ra mc
thp IOL
- - 10mA
Dng in ng ra khi
ngn mch IOS
20mA - 55mA
Bng 3.2 Yu cu iu khin 2
Thng s Gi tr
Ngun cp ng c 12V
Chn iu khin mc cao
Khng c in qua
ng c
Chn iu khin mc thp ng c quay
Chn iu khin th ni
(tng tr cao)
Khng c in qua
ng c

TRANSISTOR 10 / 15
16. Lp li cu 12 vi mch s c thng s trong bng 2.2.
17. Lp li cu 12 vi yu cu iu khin trong bng 3.2.
18. Lp li cu 12 vi mch s c thng s trong bng 2.2 v yu cu iu khin trong bng 3.2
2. Transistor MOSFET
2.1. Gii thiu v c tnh hot ng
c gii thiu vo nhng nm 1970 [1], MOSFET ngy nay (2013) vn cn c s dng rng ri
trong cc ng dng in t cng sut. Transistor MOSFET
1
l linh kin 3 chn (D, S, G) ng ngt ti
bng in p. Gia hai chn D v S l mt kha in t m cha kha l tn hiu in p ti chn G:
- Khi c tn hiu kha ng t chn G, dng in chy t D qua S c thng thng (lc ny
gia D v S ch c mt cch tr nh RDS(ON) di 0.2 ).
- Cn khi c tn hiu kha m ti G, gia D qua S l mt in tr rt ln ( 20M) lm dng
in khng i qua c.
Tn hiu m-ng kha ca MOSFET l bao nhiu th ty loi v ty nh sn xut. C 4 loi
MOSFET vi k hiu v c tnh ng ngt
2
c cho trong Error! Reference source not found..

Hnh 3.11 - K hiu v c tnh ca MOSFET

Hnh 3.11 (a) (b) l MOSFET loi D c c tnh ng ngt m (ngha l in p ng VGS(th) nh hn
0V). Trong khi MOSFET loi E (c) v (d) c c tnh ng ngt dng, ngha l in p ng
VGS(th) ln hn 0.

1
MOSFET = Metal Oxide Semiconductor Field Effect transistor : Transistor bn dn -xt kim loi hiu ng trng
2
c tnh truyn , transfet characteristics
TRANSISTOR 11 / 15
V d:
Tn MOSFET c trng Hnh dng K hiu c tnh
IRF540
Loi E, knh N
RDS(on) = 0.055 ; V(BR)DSS= 100V
ID=22A ; VGS(th)=3V



IRF9540
Loi E, knh N
VDSS = - 100V ; RDS(on) = 0.117
ID = - 23A ; VGS(th) = -3V



hiu r hn hot ng ca MOSFET, ngi ta kho st c tnh ng ra
1
: t mt ngun p vo cc G
v S, mt ngun p khc vo D v S. Ln lt thay i VGS v VDS o dng in IDS. th thu c
c dng nh trn Hnh 3.12.

Hnh 3.12 c tnh ng ra ca MOSFET
Da trn c tnh ng ra, MOSFET c 3 min hot ng:
- Vng in tr: L vng c ng thng nghin t gc 0. Gia D v S ch l mt in tr rt b
(0.2). Ri p gia D v S gn nh bng 0. y l vng kha ng.
- Vng bo ha: L vng m dng in ID khng i (nm ngang) khi VDS thay i. ID ch thay i khi
VGS thay i v s thay i ny khng tuyn tnh m l mt ng bc 2:
( )
2
) (th GS GS D
V V K I =
Trong VGS(th) l in p ngng ng kha, cn K l hng s ph thuc vo nhiu
yu t
- Vng ngng dn: L vng m in p VGS nh hn VGS(th). Gia D v S l in tr rt ln lm cho
MOSFET khng dn in.
2.2. Mt s thng s quan trng ca MOSFET:
Trong thit k s dng MOSFET ng ngt ti, ta cn lu mt s thng s sau:

1
Output characteristics
TRANSISTOR 12 / 15
* in tr RDS(ON): L in tr gia cc D v S khi MOSFET ng. Khi nhit tng, RDS(ON) tng
theo quan h
3 . 2
) ( ) (
300
) 25 (
|
.
|

\
|
=
T
C R R
o
ON DS ON DS
. c tnh h s nhit dng ny gip vic ghp ni song
song MOSFET thun li, khng cn thm mch iu chnh.
* in p ngng VGS(th): in p gia chn G v S MOSFET bt u dn in. Gi tr VGS(th) thng
thng l 2V-4V i vi MOSFET cho ng dng cn in p cao v 1V-2V i vi MOSFET cho ng
dng cn in p thp. VGS(th) c h s nhit m.
* li dng-p
1
gfs: l tng ca ID so vi VGS mt gi tr VDS no . Gi tr gfs cng ln th
MOSFET kh nng ng ngt tn s cng cao. gfs c h s nhit m.
DS
V
GS
DS
fs
V
I
g
(

A
A
=
3 . 2
300
) 25 (

|
.
|

\
|
=
T
C g g
o
fs fs


* in p nh thng BVDSS: L in p gia cc D v S ln nht m MOSFET khng b nh thng
(chy) khi MOSFET trng thi m (OFF). BVDSS c h s nhit dng, nhng nh hng t: Khi nhit
MOSFET tng ln 100
o
C, BVDSS ch tng 10% (t 25
o
C).
* Dng r IDSS: Dng in chy t D qua S khi MOSFET trng thi m (OFF). IDSS c h s nhit
dng.
* c tnh ng ngt (td(ON), tr, td(OFF), tf): c tnh ng ngt ca ti in tr c cho trong th


1
Transconductance
TRANSISTOR 13 / 15

Hnh 3.13 p ng VDS, ID, IG, VGS khi ng (ON) MOSFET.
* tng dv/dt ca cc D v S: Do trong
MOSFET c t in v transistor k sinh, nn
tc tng in p gia cc D v S qu
nhanh c th gy ra hin tng kch dn
MOSFET khng mong mun. phn tch
nh hng ca dv/dt, ta xt mch tng
ng ca MOSFET (loi knh N) nh
Hnh 3.14. Ti cc G, in lng Q np vo
t CGD l:
V C Q
GD
. =
o hm hai v, lu o hm ca Q theo
thi gian t chnh l dng in i:
dt
dv
C
dt
dQ
i
GD
. = =
Cui cng ta c:
dt
dv
C Z V
GD GS GS
. . =

Hnh 3.14 M hnh tng ng ca MOSFET knh
N

Ngoi ra, khi trng thi m (OFF), tng dv/dt lm t CDB np in, v dng in np chy qua RB.
Khi dng qua RB ln ri p qua n ln hn p kch dn ca BJT k sinh (VBE 0.7V). BJT k sinh
s b kch dn. in p nh thng lc ny l BVCEO (p nh thng ca transistor) thay v BVCBO
(BVCEO ch bng 50% ~60% ca BVCBO).
3. Transistor cc cng cch ly IGBT:
(available soon )

TRANSISTOR 14 / 15
Ti liu tham kho
[1] Power MOSFET Basics, Vrej Barkhordarian, International Rectifier, El Segundo, Ca.
[2] Datasheet IFF540, ST semiconductor, 02.2003
[3] Datasheet IRF9540, International IOR Rectifier, 05.1998
[4] MOSFET Basics, K.S.Oh, Fairchild Semiconductor, 07.2000

Bi tp: Tm thng s cc loi MOSFET v in vo bng sau
Loi MOSFET Tn MOSFET VGS(th) RDS(ON)
Loi D knh n


Loi D knh p


Loi E knh n


Loi E knh p



Project 2: S dng MOSFET

1. S dng MOSFET lm cu H iu khin ng c.

2. Mch cng sut iu khin ng c bc.

TRANSISTOR 15 / 15
Project c sch:
[1] The power supply Designer Guide to High Voltage Transistors - Philips Semiconductors (12 trang)
Hng dn thit k ng ngt Transistor in p ln
[2] Base Circuit Design for High Voltage BJT in Power Converter - Philips Semiconductors (12 trang)
Hng dn thit k mch li cc B cho transistor lng cc (BJT) trong mch ngun
[3] Datasheet Ratings for MOSFET Semikron (13 trang)
[4] Drive Circuits For Power MOSFETs And IGBTs, B. Maurice, L. Wuidart (10trang)
[5] Power Semiconductors: The BJT, MOSFET, and IGBT ; Reid L. Sprite, Member, IEEE

T bi [6] tr i c yu cu: - c hiu v dch li bi bo
- Phn tch mch tm cc c trng mch dng, p ca mch
- M phng kim chng.
[6] Circuit multiplexes automotive sensors EDN.com (1 trang)
[7] High side driver feeds IGBTs and MOSFETs EDN.com (1 trang)
[8] EDN - Circuit forms constant Current SCR (1 trang)
[9] EDN - MOSFET switch provides efficient AC-DC conversion (1 trang)