CHAPTER 3

3.1
NA ND
φ j = VT ln 2 = (0.025V )ln
(
1019 ⋅ cm−3 )(1018 ⋅ cm −3 )
= 0.979V
ni 10 20 ⋅ cm −6

2εs ⎛ 1 1 ⎞ 2(11.7 ⋅ 8.854 x10−14 F ⋅ cm−1 )⎛ 1 1 ⎞

w do = ⎜ + ⎟ φj = −19 ⎜ 19 −3 + 18 −3 ⎟ (0.979V)
q ⎝ NA ND ⎠ 1.602x10 C ⎝ 10 cm 10 cm ⎠
w do = 3.73 x 10−6 cm = 0.0373μm
w do 0.0373μm w do 0.0373μm
xn = = −3 = 0.0339 μm | x p = = −3 = 3.39 x 10 μm
-3
18 19
1+
ND 10 cm 1+
N A 10 cm
1+ 19 −3 1+ 18 −3
NA 10 cm ND 10 cm

E MAX =
qN A x p
=
(1.60x10 −19
C )(1019 cm −3 )(3.39x10−7 cm)
= 5.24 x 10 5
V
εs 11.7 ⋅ 8.854 x10 −14
F /cm cm

3.2
1018 n i2 10 20 10 2
p po = N A = | n po = = =
cm 3 p po 1018 cm 3
1015 n i2 10 20 10 5
n no = N D = | p no = = =
cm 3 n no 1015 cm 3
NA ND
φ j = VT ln 2 = (0.025V )ln
(
1018 cm−3 )(1015 cm −3 )
= 0.748 V
ni 10 20 cm−6

2εs ⎛ 1 1 ⎞ 2(11.7 ⋅ 8.854 x10−14 F ⋅ cm−1 )⎛ 1 1 ⎞

w do = ⎜ + φ
⎟ j = ⎜ 18 −3 + 15 −3 ⎟ (0.748V)
q ⎝ NA ND ⎠ 1.602x10 C−19
⎝ 10 cm 10 cm ⎠
w do = 98.4 x 10−6 cm = 0.984 μm

3.3
1018 ni2 1020 102
p po = N A = | n po = = =
cm3 p po 1018 cm3
1018 ni2 1020 102
nno = N D = 3 | p no = = =
cm nno 1018 cm3
NA ND
φ j = VT ln 2 = (0.025V )ln
(
1018 ⋅ cm−3 )(1018 ⋅ cm −3 )
= 0.921V
ni 10 20 ⋅ cm −6

2εs ⎛ 1 1 ⎞ 2(11.7 ⋅ 8.854 x10−14 F ⋅ cm−1 )⎛ 1 1 ⎞

w do = ⎜ + φ
⎟ j = −19 ⎜ 18 −3 + 18 −3 ⎟ (0.921V)
q ⎝ NA ND ⎠ 1.602x10 C ⎝ 10 cm 10 cm ⎠
w do = 4.881x10−6 cm = 0.0488 μm

34
3.4
1018 ni2 1020 102
p po = N A = | n po = = =
cm3 p po 1018 cm3
1018 ni2 1020 102
nno = N D = | p no = = =
cm3 nno 1018 cm3
N N
φ j = VT ln A 2 D = (0.025V )ln
(1018 ⋅ cm−3 )(1020 ⋅ cm−3 ) = 1.04V
ni 10 20 ⋅ cm −6

2εs ⎛ 1 1 ⎞ 2(11.7 ⋅ 8.854 x10−14 F ⋅ cm−1 )⎛ 1 1 ⎞

w do = ⎜ + ⎟ φj = ⎜ 18 −3 + 20 −3 ⎟ (1.04V)
q ⎝ NA ND ⎠ 1.602x10 C−19
⎝ 10 cm 10 cm ⎠
w do = 0.0369 μm

3.5
1016 ni2 1020 10 4
p po = N A = | n po = = =
cm3 p po 1016 cm3
1019 ni2 1020 10
nno = N D = | p no = = =
cm3 nno 1019 cm3

φ j = VT ln
N AND
= (0.025V )ln
( )(
1019 ⋅ cm−3 1016 ⋅ cm −3 )
= 0.864V
ni2 1020 ⋅ cm −6

wdo =
2εs ⎛ 1
⎜ +
1 ⎞
⎟ φj =
(
2 11.7 ⋅ 8.854x10−14 F ⋅ cm−1 ⎛ 1 ) 1 ⎞
⎜ 19 −3 + 16 −3 ⎟ (0.864V)
−19
q ⎝ N A ND ⎠ 1.602x10 C ⎝ 10 cm 10 cm ⎠
wdo = 0.334 μm

3.6
VR 5
wd = wdo 1+ | (a) wd = 2wdo requires VR = 3φ j = 2.55 V | wd = 0.4μm 1+ = 1.05 μm
φj 0.85

3.7
VR 10
wd = wdo 1+ | (a) wd = 3wdo requires VR = 8φ j = 4.80 V | wd = 1μm 1+ = 4.20 μm
φj 0.6

3.8
1 1 2 j 1000 A⋅ cm −2 V
jn = σE , σ = = = | E= n = = 500
ρ 0.5 Ω ⋅ cm Ω ⋅ cm σ 2(Ω ⋅ cm)
−1
cm

35
3.9
j p = σE | E=
jn
σ
( )
= jn ρ = 5000 A⋅ cm −2 (2Ω ⋅ cm)= 10.0
kV
cm

3.10
⎛ 4x1015 ⎞⎛ 10 7 cm ⎞
(
j ≅ jn = qnv = 1.60x10−19 C ⎜ )
3 ⎟⎜
⎝ cm ⎠⎝ s ⎠
A
⎟ = 6400 2
cm

3.11
⎛ 5x1017 ⎞⎛ 10 7 cm ⎞
(
j ≅ j p = qpv = 1.60x10−19 C ⎜ )
3 ⎟⎜
⎝ cm ⎠⎝ s ⎠
kA
⎟ = 800 2
cm

3.12
dp ⎛ D ⎞ 1 dp ⎛ kT ⎞ 1 dp
j p = qμ p pE − qD p = 0 → E = −⎜⎜ p ⎟⎟ = −⎜ ⎟
dx ⎝ μ p ⎠ p dx ⎝ q ⎠ p dx
⎛ x⎞ 1 dp 1 V 0.025V V
p( x) = N o exp⎜ − ⎟ | = | E = − T = − −4 = −250
⎝ L⎠ p dx L L 10 cm cm
The exponential doping results in a constant electric field.

3.13
dn dn dn 2000 A/ cm 2 1.00 x 1021
j p = qDn = qμnVT | = =
dx dx ( )(
dx 1.60x10−19 C 500cm2 /V − s (0.025V ) cm 4 )
3.14
[
10 = 10 4 ⋅10−16 exp(40VD )−1 + VD ] and the solver yields VD = 0.7464 V

3.15
ID + IS 0.025 f
f = 10 −10 4 I D − 0.025ln | f ' = −10 4 − | I'D = I D −
IS ID + IS f'
-13
Starting the iteration process with ID = 100 μA and IS = 10 A:

ID f f'

1.000E-04 8.482E+0 -1.025E+04

0
9.275E-04 1.512E- -1.003E+04
01
9.426E-04 3.268E- -1.003E+04
06
9.426E-04 9.992E- -1.003E+04
16

36
3.16
(a) Create the following m-file:
function fd=current(id)
fd=10-1e4*id-0.025*log(1+id/1e-13);
Then: fzero('current',1) yields ans = 9.4258e-04
-15
(b) Changing IS to 10 A:
function fd=current(id)
fd=10-1e4*id-0.025*log(1+id/1e-15);
Then: fzero('current',1) yields ans = 9.3110e-04

3.17
qVT 1.60x10 C (0.025V )
−19

T= = = 290 K
k 1.38x10−23 J / K

3.18

VT =
( −23
kT 1.38x10 J / K T
=
)
= 8.63x10−5 T
−19
q 1.60x10 C
For T = 218 K, 273 K and 358 K, VT = 18.8 mV, 23.6 mV and 30.9 mV

3.19
⎡ ⎛ 40V ⎞ ⎤
Graphing I D = I S ⎢exp⎜ D
⎟ −1⎥ yields :
⎣ ⎝ n ⎠ ⎦
6

5
(b)

4 (a)

(c)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2

37
3.20

nVT = n
kT
= 1.04
( )
1.38x10−23 J / K (300)
= 26.88 mV T = 26.88mV
1.602x10-19
= 312 K
q 1.60x10−19 C 1.38x10-23

3.21
⎡ ⎛v ⎞ ⎤ vD ⎛ i ⎞
iD = I S ⎢exp⎜ D ⎟ −1⎥ or = ln⎜1+ D ⎟
⎣ ⎝ nVT ⎠ ⎦ nVT ⎝ IS ⎠
⎛i ⎞ ⎛ 1 ⎞
For i D >> I S , D ≅ ln⎜ D ⎟ or ln (I D )= ⎜ ⎟v D + ln (IS )
v
nVT ⎝ IS ⎠ ⎝ nVT ⎠

which is the equation of a straight line with slope 1/nVT and x-axis intercept at -ln (IS). The
-4
values of n and IS can be found from any two points on the line in the figure: e. g. iD = 10 A
-9
for vD = 0.60 V and iD = 10 A for vD = 0.20 V. Then there are two equations in two
unknowns:
⎛ 40 ⎞ ⎛8⎞
( )
ln 10-9 = ⎜ ⎟.20 + ln (IS ) or 9.21 = ⎜ ⎟ + ln (IS )
⎝n⎠ ⎝n⎠
⎛ 40 ⎞ ⎛ 24 ⎞
( )
ln 10-4 = ⎜ ⎟.60 + ln (IS ) or 20.72 = ⎜ ⎟ + ln (IS )
⎝n⎠ ⎝n⎠
-12
Solving for n and IS yields n = 1.39 and IS = 3.17 x 10 A = 3.17 pA.

3.22
⎛ I ⎞ ⎡ ⎛V ⎞ ⎤
VD = nVT ln⎜1+ D ⎟ | I D = I S ⎢exp⎜ D ⎟ −1⎥
⎝ IS ⎠ ⎣ ⎝ nVT ⎠ ⎦
⎛ 7x10−5 A ⎞ ⎛ 5x10−6 A ⎞
(a) VD = 1.05(0.025V )ln⎜1+ ⎟ = 0.837V | (b) V = 1.05(0.025V )ln⎜1+ ⎟ = 0.768V
10−18 A ⎠ 10−18 A ⎠
D
⎝ ⎝
⎡ ⎛ 0 ⎞ ⎤
(c) I D = 10−18 A⎢exp⎜ ⎟ −1⎥ = 0 A
⎣ ⎝1.05⋅ 0.025V ⎠ ⎦
⎡ ⎛ −0.075V ⎞ ⎤
(d) I D = 10−18 A⎢exp⎜ ⎟ −1⎥ = −0.943x10 A
−19

⎣ ⎝ 1.05⋅ 0.025V ⎠ ⎦
⎡ ⎛ −5V ⎞ ⎤
(e) I D = 10−18 A⎢exp⎜ −18
⎟ −1⎥ = −1.00x10 A
⎣ ⎝1.05⋅ 0.025V ⎠ ⎦

3.23
⎛ I ⎞ ⎡ ⎛V ⎞ ⎤
VD = nVT ln⎜1+ D ⎟ | I D = I S ⎢exp⎜ D ⎟ −1⎥
⎝ IS ⎠ ⎣ ⎝ nVT ⎠ ⎦
⎛ 10−4 A ⎞ ⎛ 10−5 A ⎞
(a) VD = 0.025V ln⎜1+ −17 ⎟ = 0.748V | (b) VD = 0.025V ln⎜1+ −17 ⎟ = 0.691V
⎝ 10 A ⎠ ⎝ 10 A ⎠

38
 ⎡ ⎛ 0 ⎞ ⎤
(c) ID = 10−17 A⎢exp⎜ ⎟ −1⎥ = 0 A
⎣ ⎝ 0.025V ⎠ ⎦
⎡ ⎛ −0.06V ⎞ ⎤
(d) ID = 10−17 A⎢exp⎜ −17
⎟ −1⎥ = −0.909x10 A
⎣ ⎝ 0.025V ⎠ ⎦
⎡ ⎛ −4V ⎞ ⎤
(e) ID = 10−17 A⎢exp⎜ −17
⎟ −1⎥ = −1.00x10 A
⎣ ⎝ 0.025V ⎠ ⎦

3.24
⎡ ⎛V ⎞ ⎤ ⎡ ⎛ 0.675 ⎞ ⎤
I D = I S ⎢exp⎜ D ⎟ −1⎥ = 10−17 A ⎢exp⎜ ⎟ −1⎥ = 5.32x10 A = 5.32 μA
−6

⎣ ⎝ VT ⎠ ⎦ ⎣ ⎝ 0.025 ⎠ ⎦
⎛I ⎞ ⎛ 15.9x10−6 A ⎞
VD = VT ln⎜ D + 1⎟ = (0.025V )ln⎜ −17
+ 1⎟ = 0.703 V
⎝ IS ⎠ ⎝ 10 A ⎠

3.25
⎛ I ⎞ ⎛ 40 A ⎞
VD = nVT ln⎜1+ D ⎟ = 2(0.025V )ln⎜1+ −10 ⎟ = 1.34 V
⎝ IS ⎠ ⎝ 10 A ⎠
⎛ 100 A ⎞
VD = 2(0.025V )ln⎜1+ −10 ⎟ = 1.38 V
⎝ 10 A ⎠

3.26
ID 2mA
(a) I S = = = 1.14x10−17 A
⎡ ⎛ V ⎞ ⎤ ⎡ ⎛ 0.82 ⎞ ⎤
⎢exp⎜ D ⎟ −1⎥ ⎢exp⎜ ⎟ −1⎥
⎣ ⎝ nVT ⎠ ⎦ ⎣ ⎝ 0.025 ⎠ ⎦
⎡ ⎛ −5 ⎞ ⎤
(b) I D = 1.14x10−17 A ⎢exp⎜ −17
⎟ −1⎥ = −1.14x10 A
⎣ ⎝ 0.025 ⎠ ⎦

3.27
ID 300μA
(a) I S = = = 2.81x10−17 A
⎡ ⎛ V ⎞ ⎤ ⎡ ⎛ 0.75 ⎞ ⎤
⎢exp⎜ D ⎟ −1⎥ ⎢exp⎜ ⎟ −1⎥
⎣ ⎝ nVT ⎠ ⎦ ⎣ ⎝ 0.025 ⎠ ⎦
⎡ ⎛ −3 ⎞ ⎤
(b) I D = 2.81x10−17 A ⎢exp⎜ −17
⎟ −1⎥ = −2.81x10 A
⎣ ⎝ 0.025 ⎠ ⎦

39
3.28
⎛ I ⎞ ⎛ 10−3 A ⎞
VD = nVT ln⎜1+ D ⎟ | 10-14 ≤ I S ≤ 10−12 | VD = (0.025V )ln⎜1+ −12 ⎟ = 0.518 V
⎝ IS ⎠ ⎝ 10 A ⎠
⎛ 10−3 A ⎞
VD = (0.025V )ln⎜1+ −14 ⎟ = 0.633 V | So, 0.518 V ≤ VD ≤ 0.633 V
⎝ 10 A ⎠

3.29
1.38x10−23 (307) ⎡ ⎛ V ⎞ ⎤
VT = = 0.0264V | = ⎢exp⎜ ⎟ −1⎥
D
I I
1.60x10−19
D S
⎣ ⎝ 0.0264n ⎠ ⎦
Varying n and IS by trial-and-error with a spreadsheet:

n IS

1.039 7.606E-15

Error
VD ID-Measured ID-Calculated
Squared

0.500 6.591E-07 6.276E-07 9.9198E-16

0.550 3.647E-06 3.885E-06 5.6422E-14
0.600 2.158E-05 2.404E-05 6.0672E-12
0.650 1.780E-04 1.488E-04 8.518E-10
0.675 3.601E-04 3.702E-04 1.0261E-10
0.700 8.963E-04 9.211E-04 6.1409E-10
0.725 2.335E-03 2.292E-03 1.8902E-09
0.750 6.035E-03 5.701E-03 1.1156E-07
0.775 1.316E-02 1.418E-02 1.0471E-06

Total Squared Error 1.1622E-06

3.30

VT =
( −23
kT 1.38x10 J / K T
=
)
= 8.63x10−5 T
q 1.60x10−19 C
For T = 233 K, 273 K and 323 K, VT = 20.1 mV, 23.6 mV and 27.9 mV

3.31
kT 1.38x10 (303) ⎛ 10−3 ⎞
−23

=
1.60x10−19
= 26.1 mV | VD = (0.0261V )ln⎜1+ −16 ⎟
= 0.757 V
q ⎝ 2.5x10 ⎠
ΔV = (−1.8mV / K )(20K ) = −36.0 mV | VD = 0.757 − 0.036 = 0.721 V

40
3.32
kT 1.38x10 (298) ⎛ 10−4 ⎞
−23

= = 25.67 mV | (a) VD = (0.02567V )ln⎜1+ −15 ⎟ = 0.650 V

q 1.602x10−19 ⎝ 10 ⎠
ΔV = (−2.0mV / K )(25K ) = −50.0 mV
(b) VD = 0.650 − 0.050 = 0.600 V

3.33
kT 1.38x10 (298) ⎛ 2.5x10−4 ⎞
−23

=
1.602x10−19
= 25.67 mV | (a) VD = (0.02567V ) ⎜1+ 10−14 ⎟ = 0.615 V
ln
q ⎝ ⎠
(b) ΔV = (−1.8mV / K )(60K )= −50.0 mV VD = 0.615 − 0.108 = 0.507 V
(c) ΔV = (−1.8mV / K )(−80K )= +144 mV VD = 0.615 + 0.144 = 0.758 V

3.34
dvD vD − VG − 3VT 0.7 −1.21− 3(0.0259) mV
= = = −1.96
dT T 300 K

41
3.35
I S 2 ⎛ T2 ⎞
3
⎡ ⎛ E ⎞⎛ 1 1 ⎞⎤ ⎛ T ⎞3 ⎡⎛ E ⎞⎛ T ⎞⎤
= ⎜ ⎟ exp⎢−⎜ G ⎟⎜ − ⎟⎥ = ⎜ 2 ⎟ exp⎢⎜ G ⎟⎜1− 1 ⎟⎥
I S1 ⎝ T1 ⎠ ⎣ ⎝ k ⎠⎝ T2 T1 ⎠⎦ ⎝ T1 ⎠ ⎣⎝ kT1 ⎠⎝ T2 ⎠⎦
⎡⎛ E ⎞⎛ 1 ⎞⎤
f (x ) = (x ) exp⎢⎜ G ⎟⎜1− ⎟⎥
3 T
x= 2
⎣⎝ kT1 ⎠⎝ x ⎠⎦ T1
Using trial and error with a spreadsheet yields T = 4.27 K, 14.6 K, and 30.7 K to increase the
saturation current by 2X, 10X, and 100X respectively.

x f(x) Delta T

1.00000 1.00000 0.00000

1.00500 1.27888 1.50000
1.01000 1.63167 3.00000
1.01500 2.07694 4.50000
1.01400 1.97945 4.20000
1.01422 2.00051 4.26600
1.01922 2.54151 5.76600
1.02422 3.22151 7.26600
1.02922 4.07433 8.76600
1.03422 5.14160 10.26600
1.03922 6.47438 11.76600
1.04422 8.13522 13.26600
1.04922 10.20058 14.76600
1.04880 10.00936 14.64000
1.10000 90.67434 30.00000
1.10239 100.0012 30.71610

3.36
VR 5 10
wd = wdo 1+ | (a) wd = 1μm 1+ = 2.69 μm (b) wd = 1μm 1+ = 3.67 μm
φj 0.8 0.8

3.37

φ j = VT ln
N AND
= (0.025V )ln
( )(
1016 cm −3 1015 cm −3 )
= 0.633 V
ni2 1020 cm−6

wdo =
2εs ⎛ 1
⎜ +
1 ⎞
⎟ φj =
(
2 11.7 ⋅ 8.854x10−14 F ⋅ cm−1 ⎛ 1 ) 1 ⎞
⎜ 16 −3 + 15 −3 ⎟ (0.633V)
−19
q ⎝ N A ND ⎠ 1.602x10 C ⎝10 cm 10 cm ⎠
VR
wdo = 0.949 μm | wd = wdo 1+
φj
10V 100V
wd = 0.949μm 1+ = 3.89 μm | wd = 0.949μm 1+ = 12.0 μm
0.633V 0.633V

42
3.38

φ j = VT ln
N AND
= (0.025V )ln
(
1018 cm −3 1020 cm −3 )(
= 1.04 V
)
ni2 1020 cm−6

wdo =
2εs ⎛ 1
⎜ +
1 ⎞
⎟ φj =
(
2 11.7 ⋅ 8.854x10−14 F ⋅ cm−1 )⎛⎜ 1
+
1 ⎞
⎟ (1.04V)
q ⎝ N A ND ⎠ 1.602x10−19 C 18
⎝ 10 cm
−3
1020 cm−3 ⎠
VR
wdo = 0.0368 μm | wd = wdo 1+
φj
5 25
wd = 0.0368μm 1+ = 0.0887 μm | wd = 0.0368μm 1+ = 0.184 μm
1.04 1.04

3.39
2(φ j + VR ) 2(φ j + VR ) 2φ j V
Emax = = = 1+ R
wd VR wdo φj
wdo 1+
φj
V 2(0.6V ) V
3x105 = −4 1+ R → VR = 374 V
cm 10 cm 0.6

3.40

2φ 2(0.748V ) kV E w
3x105
V
(0.984x10−4 cm )
E= j = −4
= 15.2 | φ j + VR = max do = cm
wdo 0.984x10 cm cm 2 φj 2 0.748V
VR = 291.3 − 0.748 = 291 V

3.41
VZ = 4 V; RZ = 0 Ω since the reverse breakdown slope is infinite.

3.42
Since NA >> ND, the depletion layer is all on the lightly-doped side of the junction. Also, VR
>> φj, so φj can be neglected.
qN A x p qN A wd qN A 2εS VR
Emax = = =
εS εS εS q NA

( )
3x105 (11.7) 8.854x10−14 ( )
2
2
EmaxεS
NA = = = 2.91 x 1014 / cm3
2qVR −19
2 1.602x10 1000( )

43
3.43
N AND 10151020
φ j = VT ln = 0.025ln = 0.864V
ni2 1020

wdo =
2εS ⎛ 1
⎜ +
1 ⎞
⎟φ j =
2(11.7) 8.854x10−14 ⎛ 1
⎜
( +
1 ⎞ ) −4
⎟0.864 = 1.057x10 cm
q ⎝ N A ND ⎠ 1.602x10−19 ⎝ 1015 1020 ⎠

C =
" εS
=
(
11.7 8.854x10−14 ) = 9.80x10 -9
F / cm 2
| Cj =
C "jo A
=
9.80x10-9 (0.05)
= 188 pF
1.057x10−4
jo
wdo VR 5
1+ 1+
φj 0.864

3.44
N AND 10181015
φ j = VT ln = 0.025ln = 0.748V
ni2 1020

wdo =
2εS ⎛ 1
⎜ +
1 ⎞
⎟φ j =
2(11.7) 8.854x10−14 ( )⎛⎜ 1
+
1 ⎞
0.748 = 0.984x10−4 cm
15 ⎟
q ⎝ N A ND ⎠ 1.602x10−19 ⎝ 1018
10 ⎠

C =
" εS
=
(
11.7 8.854x10−14 ) = 10.5x10 -9
F / cm 2
| Cj =
C "jo A
=
10.5x10-9 (0.02)
= 55.4 pF
0.984x10−4
jo
wdo VR 10
1+ 1+
φj 0.748

3.45
−4 −10
I D τ T 10 A 10 s ( )
(a) CD =
VT
=
0.025V
= 400 fF (
(b) Q = I D τ T = 10−4 A 10−10 s = 10 fC )
(
25x10−3 A 10−10 s ) = 100 pF
(c) CD =
0.025V
(
| Q = I D τ T = 5x10−3 A 10−10 s = 0.50 pC )
3.46
−8
I D τ T 1A 10 s ( )
(a) CD =
VT
=
0.025V
= 0.400 μF (
(b) Q = I D τ T = 1A 10−8 s = 10.0 nC )
(
100mA 10−8 s ) = 0.04 μF
(c) CD =
0.025V
(
| Q = I D τ T = 100mA 10−8 s = 1.00 nC )

44
3.47
N AND 10191017
φ j = VT ln = 0.025ln = 0.921V
ni2 1020

wdo =
2εS ⎛ 1
⎜ +
1 ⎞
⎟φ j =
2(11.7) 8.854x10−14 ⎛ 1
⎜ +
(
1 ⎞ )
⎟0.921 = 0.110 μm
q ⎝ N A ND ⎠ 1.602x10−19 ⎝ 1019 1017 ⎠

C jo =
εS A
=
(
11.7 8.854x10−14 10−4 )( ) = 9.42 pF / cm 2
| Cj =
C jo
=
9.42 pF
= 3.72 pF
−4
wdo 0.110x10 VR 5
1+ 1+
φj 0.921

3.48
N AND 10191016
φ j = VT ln = 0.025ln = 0.864V
ni2 1020

wdo =
2εS ⎛ 1
⎜ +
1 ⎞
⎟φ j =
2(11.7) 8.854x10−14 ( )⎛⎜ 1
+
1 ⎞
⎟0.864 = 0.334μm
q ⎝ N A ND ⎠ 1.602x10−19 ⎝ 1019 1016 ⎠

C jo =
εS A
=
( )(
11.7 8.854x10−14 0.25cm2 ) = 7750 pF | Cj =
C jo
=
7750 pF
= 3670 pF
−4
wdo 0.334x10 VR 3
1+ 1+
φj 0.864

3.49
L=

RFC
C
VDC
10 μH 10 μH
C

C jo 39 pF 1 1
C= (a) C = = 25.5 pF | f o = = = 9.97 MHz
1+
VR
1+
1V 2π LC 2π ( )
10−5 H 25.5 pF
φj 0.75V
39 pF 1 1
(b) C = = 10.3 pF | f o = = = 15.7 MHz
1+
10V 2π LC 2π ( )
10−5 H 10.3 pF
0.75V

3.50
⎛ 50 A ⎞ ⎛ 50 A ⎞
(a) VD = (0.025V )ln⎜1+ −7 ⎟ = 0.501 V | (b) VD = (0.025V )ln⎜1+ −15 ⎟ = 0.961 V
⎝ 10 A ⎠ ⎝ 10 A ⎠

45
3.51
⎛ 4x10−3 A ⎞ ⎛ 4x10−3 A ⎞
(a) VD = (0.025V )ln⎜1+ ⎟ = 0.495 V | (b) V = (0.025V ) 1+ 10−14 A ⎟ = 0.668 V
ln⎜
10−11 A ⎠
D
⎝ ⎝ ⎠

3.52
Lp 0.025cm
RS = R p + Rn Rp = ρ p = (1Ω − cm) = 2.5Ω
Ap 0.01cm 2
0.025cm
= (0.01Ω − cm)
Ln
Rn = ρ n = 0.025Ω RS = 2.53 Ω
An 0.01cm 2

3.53
⎛ I ⎞ ⎛ 10−3 ⎞
(a) VD' = VT ln⎜1+ D ⎟ = (0.025V )ln⎜1+ −16 ⎟
= 0.708V
⎝ IS ⎠ ⎝ 5x10 ⎠
VD = VD' + I D RS = 0.708V + 10−3 A(10Ω)= 0.718 V
(b) VD = VD' + I D RS = 0.708V + 10−3 A(100Ω)= 0.808 V

3.54
ρc
10Ω − μm2
ρ c = 10Ω − μm 2
Ac = 1μm RC =2
= = 10Ω / contact
Ac 1μm2
5 anode contacts and 14 cathode contacts
10Ω
Resistance of anode contacts = = 2Ω
5
10Ω
Resistance of cathode contacts = = 0.71Ω
14

3.55
(a) From Fig. 3.21a, the diode is approximately 10.5 μm long x 8 μm wide. Area = 84 μm2.
(b) Area = (10.5x0.13 μm) x (8x0.13μm) = 1.42 μm2.

46
3.56
(a) 5 = 10 4 I D + VD | VD = 0 I D = 0.500mA | I D = 0 VD = 5V
4.5V
Forward biased - VD = 0.5 V I D = = 0.450 mA
10 4 Ω
(b) − 6 = 3000I D + VD | VD = 0 I D = −2.00mA | I D = 0 VD = −6V
−2V
In reverse breakdown - VD = −4 V I D = = −0.667 mA
3kΩ
(c) − 3 = −3000I D + VD | VD = 0 I D = −1.00mA | I D = 0 VD = −3V
Reverse biased - VD = −3 V I D = 0
iD

2 mA

1 mA

(c) Q-point (a) Q-point

-6 -5 -4 -3 -2 -1 vD

1 2 3 4 5 6

(b) Q-point
-1 mA

-2 mA

3.57
(a) 10 = 5000I D + VD | VD = 0 I D = 2.00 mA | VD = 5 V I D = 1.00 mA
9.5V
Forward biased - VD = 0.5V I D = = 1.90 mA
5kΩ
(b) -10 = 5000I D + VD | VD = 0 I D = −2.00 mA | VD = −5 V I D = −1.00 mA
−6V
In reverse breakdown - VD = −4V I D = = −1.20 mA
5kΩ
(c) − 2 = 2000I D + VD | VD = 0 I D = −1.00 mA | I D = 0 VD = −2 V
Reverse biased - VD = −2 V I D = 0

iD

2 mA
(a) Q-point

1 mA

(c) Q-point
-6 -5 -4 -3 -2 -1 v
D

1 2 3 4 5 6

-1 mA
(b) Q-point

-2 mA

47
3.58
*Problem 3.58 - Diode Circuit SPICE Results
V 1 0 DC 5
R 1 2 10K VD = 0.693 V
D1 2 0 DIODE1 ID = 0.431 μA
.OP
.MODEL DIODE1 D IS=1E-15
.END

3.59
(a) −10 = 10 4 I D + VD | VD = 0 I D = −1.00 mA | VD = −5 V I D = −0.500 mA
−10 − (−4)V
In reverse breakdown - VD = −4 V I D = = −0.600 mA
10kΩ
(b) 10 = 10 4 I D + VD | VD = 0 I D = 1.00 mA | VD = 5 V I D = 0.500 mA
10 − 0.5V
Forward biased - VD = 0.5 V I D = = 0.950 mA
10kΩ
(c) − 4 = 2000I D + VD | VD = 0 I D = −2.00 mA | I D = 0 VD = − 4 V
Reverse biased - VD = −4 V I D = 0
iD

2 mA

1 mA (b) Q-point

(c) Q-point

-6 -5 -4 -3 -2 -1 vD

1 2 3 4 5 6

(a) Q-point
-1 mA

-2 mA

48
 iD (A)

0.002

0.001

-7 -6 -5 -4 -3 -2 -1 v D (V)

1 2 3 4 5 6 7

-0.001

-0.002

49
3.60
R

i
D
+
+
V v
- D
-

The load line equation: V = iD R + vD We need two points to plot the load line.

(a) V = 6 V and R = 4kΩ: For vD = 0, iD = 6V/4 kΩ = 1.5 mA and for iD = 0, vD = 6V.

Plotting this line on the graph yields the Q-pt: (0.5 V, 1.4 mA).
(b) V = -6 V and R = 3kΩ: For vD = 0, iD = -6V/3 kΩ = -2 mA and for iD = 0, vD = -6V.
Plotting this line on the graph yields the Q-pt: (-4 V, -0.67 mA).
(c) V = -3 V and R = 3kΩ: Two points: (0V, -1mA), (-3V, 0mA); Q-pt: (-3 V, 0 mA)
(d) V = +12 V and R = 8kΩ: Two points: (0V, 1.5mA), (4V, 1mA); Q-pt: (0.5 V, 1.4 mA)
(e) V = -25 V and R = 10kΩ: Two points: (0V, -2.5mA), (-5V, -2mA); Q-pt: (-4 V, -2.1 mA)
i (A)
D

.002
Q-Point
(0.5V,1.45 mA)
(d)

.001
Q-Point
Q-Point
(-3V,0 mA) Load line for (a)
(0.5V,1.4 mA)

-7 -6 -5 -4 -3 -2 -1 1 2 3 4 5 6 7 v (V)
D

(c)
Q-Point
(-4V,-0.67 mA)
-.001

Load line for (b)

-.002
Q-Point
(-4V,-2.1 mA)
(e)

50
3.61
-9
Using the equations from Table 3.1, (f = 10-10 exp ..., etc.)
VD = 0.7 V requires 12 iterations, VD = 0.5 V requires 22 iterations,
VD = 0.2 V requires 384 iterations - very poor convergence because the second iteration (VD =
9.9988 V) is very bad.

3.62
Using Eqn. (3.28),
⎛i ⎞
V = iD R + VT ln⎜ D ⎟
⎝ IS ⎠
( )
or 10 = 10 4 iD + 0.025ln 1013 iD .

(
We want to find the zero of the function f = 10 −10 iD − 0.025ln 10 iD
4 13
)
iD f
.001 -0.576
.0001 8.48
.0009 0.427
.00094 0.0259 - converged

3.63
⎛ I ⎞ 0.025
f = 10 −10 4 ID − 0.025ln⎜1+ D ⎟ | f ' = −10 4 −
⎝ IS ⎠ ID + IS

x f(x) f'(x)

1.0000E+00 -9.991E+03 -1.000E+04

9.2766E-04 1.496E-01 -1.003E+04
9.4258E-04 3.199E-06 -1.003E+04
9.4258E-04 9.992E-16 -1.003E+04
9.4258E-04 9.992E-16 -1.003E+04

3.64
Create the following m-file:
function fd=current(id)
fd=10-1e4*id-0.025*log(1+id/1e-13);
Then: fzero('current',1) yields ans = 9.4258e-04 + 1.0216e-21i

51
3.65
The one-volt source will forward bias the diode. Load line:
1 = 10 4 I D + VD | I D = 0 VD = 1V | VD = 0 I D = 0.1mA → (50 μA, 0.5 V )
[
Mathematical model: f = 1−10 exp(40VD )−1 + VD → (49.9 μA, 0.501 V )
−9
]
Ideal diode model: ID = 1V/10kΩ = 100μA; (100μA, 0 V)
Constant voltage drop model: ID = (1-0.6)V/10kΩ = 40.0μA; (40.0μA, 0.6 V)

3.66
Using Thévenin equivalent circuits yields and then combining the sources

I 1k Ω I
1.2 k Ω 2.2 k Ω
- V + - V +
+ + +
1.2 V 1.5 V 0.3 V
- - -

(a) Ideal diode model: The 0.3 V source appears to be forward biasing the diode, so we will
assume it is "on". Substituting the ideal diode model for the forward region yields
0.3V
I= = 0.136 mA . This current is greater than zero, which is consistent with the diode
2.2kΩ
being "on". Thus the Q-pt is (0 V, +0.136 mA).
I V
on
- +
- V + 2.2 k Ω I
2.2 k Ω
0.6 V
+ +
0.3 V
- 0.3 V
-

Ideal Diode: CVD:

(b) CVD model: The 0.3 V source appears to be forward biasing the diode so we will assume it
0.3V − 0.6V
is "on". Substituting the CVD model with Von = 0.6 V yields I = = −136 μA .
2.2kΩ
This current is negative which is not consistent with the assumption that the diode is "on".
Thus the diode must be off. The resulting Q-pt is: (0 mA, -0.3 V).

- V + I=0 2.2 k Ω

-
+ 0.3 V

52
(c) The second estimate is more realistic. 0.3 V is not sufficient to forward bias the diode into
-15
significant conduction. For example, let us assume that IS = 10 A, and assume that the full
0.3 V appears across the diode. Then
⎡ ⎛ 0.3V ⎞ ⎤
iD = 10−15 A⎢exp⎜ ⎟ −1⎥ = 163 pA , a very small current.
⎣ ⎝ 0.025V ⎠ ⎦

3.67
The nominal values are:
⎛ R2 ⎞ ⎛ 2kΩ ⎞ R1 R2 2kΩ(3kΩ)
VA = 3V ⎜ ⎟ = 3V ⎜ ⎟ = 1.20V and RTHA = = = 1.20kΩ
⎝ R1 + R2 ⎠ ⎝ 2kΩ + 3kΩ ⎠ R1 + R2 2kΩ + 3kΩ
⎛ R4 ⎞ ⎛ 2kΩ ⎞ R3 R4 2kΩ(2kΩ)
VC = 3V ⎜ ⎟ = 3V ⎜ ⎟ = 1.50V and RTHC = = = 1.00kΩ
⎝ R3 + R4 ⎠ ⎝ 2kΩ + 2kΩ ⎠ R3 + R4 2kΩ + 2kΩ
⎛ 1.50 −1.20 ⎞ V
I Dnom = ⎜ ⎟ = 136 μA
⎝1.20 + 1.00 ⎠ kΩ
For maximum current, we make the Thévenin equivalent voltage at the diode anode as large as
possible and that at the cathode as small as possible.

3V 3V R1 R2 2kΩ(0.9)2kΩ(1.1)
VA = = = 1.65V and RTHA = = = 0.990kΩ
R1 2kΩ(0.9) R1 + R2 2kΩ(0.9)+ 2kΩ(1.1)
1+
R2 1+ 2kΩ(1.1)

3V 3V R3 R4 3kΩ(1.1)2kΩ(0.9)
VC = = = 1.06V and RTHC = = = 1.17kΩ
R3 3kΩ(1.1) R3 + R4 3kΩ(1.1)+ 2kΩ(0.9)
1+
R4 1+ 2kΩ(0.9)
⎛ 1.65 −1.06 ⎞ V
I Dmax = ⎜ ⎟ = 274 μA
⎝ 0.990 + 1.17 ⎠ kΩ
For minimum current, we make the Thévenin equivalent voltage at the diode anode as small as
possible and that at the cathode as large as possible.

3V 3V R1 R2 2kΩ(1.1)2kΩ(0.9)
VA = = = 1.350V and RTHA = = = 0.990kΩ
R1 2kΩ(1.1) R1 + R2 2kΩ(1.1)+ 2kΩ(0.9)
1+
R2 1+ 2kΩ(0.9)

3V 3V R3 R4 3kΩ(0.9)2kΩ(1.1)
VC = = = 1.347V and RTHC = = = 1.21kΩ
R3 3kΩ(0.9) R3 + R4 3kΩ(0.9)+ 2kΩ(1.1)
1+
R4 1+ 2kΩ(1.1)
⎛1.350 −1.347 ⎞ V
I Dmin = ⎜ ⎟ = 1.39 μA ≅ 0
⎝ 0.990 + 1.21 ⎠ kΩ

53
3.68
SPICE Input Results
*Problem 3.68 NAME D1
V1 1 0 DC 4 MODEL DIODE
R1 1 2 2K ID 1.09E-10
R2 2 0 2K VD 3.00E-01
R3 1 3 3K
R4 3 0 2K
D1 2 3 DIODE
.MODEL DIODE D IS=1E-15 RS=0
.OP
.END
The diode is essentially off - VD = 0.3 V and ID = 0.109 nA. This result agrees with the CVD
model results.

3.69 (a)
3 − (−7)
(a) Diode is forward biased :V = 3 − 0 = 3 V | I = = 0.625 mA
16kΩ
5 − (−5)
(b) Diode is forward biased :V = −5 + 0 = −5 V | I = = 0.625 mA
16kΩ
(c) Diode is reverse biased : I = 0 | V = −5 + 16kΩ(I )= −5 V | VD = −10 V
(d ) Diode is reverse biased : I = 0 | V = 7 −16kΩ(I ) = 7 V | VD = −10 V
(b)
2.3 − (−7)
(a) Diode is forward biased :V = 3 − 0.7 = 2.3 V | I = = 0.581 mA
16kΩ
5 − (−4.3)
(b) Diode is forward biased :V = −5 + 0.7 = −4.3 V | I = = 0.581 mA
16kΩ
(c) Diode is reverse biased : I = 0 | V = −5 + 16kΩ(I )= −5 V | VD = −10 V
(d ) Diode is reverse biased : I = 0 | V = 7 −16kΩ(I ) = 7 V | VD = −10 V

3.70 (a)
3 − (−7)
(a) Diode is forward biased :V = 3 − 0 = 3 V | I = = 100 μA
100kΩ
5 − (−5)
(b) Diode is forward biased :V = −5 + 0 = −5 V | I = = 100 μA
100kΩ
(c) Diode is reverse biased : I = 0 A | V = −5 + 100kΩ(I )= −5 V | VD = −10 V
(d ) Diode is reverse biased : I = 0 A | V = 7 −100kΩ(I )= 7 V | VD = −10 V
(b)

54
 2.4 − (−7)
(a) Diode is forward biased :V = 3 − 0.6 = 2.4 V | I = = 94.0 μA
100kΩ
5 − (−4.4)
(b) Diode is forward biased :V = −5 + 0.6 = −4.4 V | I = = 94.0 μA
100kΩ
(c) Diode is reverse biased : I = 0 | V = −5 + 100kΩ(I ) = −5 V | VD = −10 V
(d ) Diode is reverse biased : I = 0 | V = 7 −100kΩ(I ) = 7 V | VD = −10 V

3.71 (a)
0 − (−9) 6−0
(a) D1 on, D2 on : I D2 = = 409μA | I D1 = 409μA − = 270μA
22kΩ 43kΩ
D1 : (409 μA, 0 V ) D2 : (270 μA, 0 V )
6−0
(b) D1 on, D2 off : I D2 = 0 | I D1 = = 140 μA | VD2 = −9 − 0 = −9V
43kΩ
D1 : (140 μA, 0 V ) D2 : (0 A, − 9 V )
6 − (−9)
(c) D1 off, D2 on : I D1 = 0 | I D2 = = 230 μA | VD1 = 6 − 43x103 I D2 = −3.92 V
65kΩ
D1 : (0 A,−3.92 V ) D2 : (230 μA,0 V )
0 − (−6) 9−0
(d ) D1 on, D2 on : I D 2 = = 140 μA | I D1 = −140 μA = 270 μA
43kΩ 22kΩ
D1 : (140 μA,0 V ) D2 : (270 μA,0 V )

(b)

(a) D1 on, D2 on :
-0.75 − 0.75 − (−9) 6 − (−0.75)
I D2 = = 341μA | I D1 = 341μA − = 184μA
22kΩ 43kΩ
D1 : (184 μA, 0.75 V) D2 : (341 μA, 0.75 V)

(b) D1 on, D2 off :

6 − 0.75
I D2 = 0 | I D1 = = 122μA | VD 2 = −9 − 0.75 = −9.75V
43kΩ
D1 : (122 μA, 0.75 V) D2 : (0 A, − 9.75 V)

55
(c) D1 off, D2 on :
6 − 0.75 − (−9)
I D1 = 0 | I D2 = = 219μA | VD1 = 6 − 43x103 I D2 = −3.43V
65kΩ
D1 : (0 A, − 3.43 V ) D2 : (219 μA, 0.75 V )

(d) D1 on, D2 on :
0.75 − 0.75 − (−6) 9 − 0.75
I D2 = = 140μA | I D1 = − 400μA = 235μA
43kΩ 22kΩ
D1 : (235 μA, 0.75 V) D2 : (140 μA, 0.75 V)

3.72 (a)
(a) D1 and D2 forward biased
0 − (−9) V 6 − (0) V
I D2 = = 600μA I D1 = I D2 − = 200μA
15 kΩ 15 kΩ
D1 : (0 V, 200 μA) D2 : (0 V, 600 μA)

(b) D1 forward biased, D2 reverse biased

6−0 V
I D1 = = 400μA VD2 = −9 − 0 = −9 V
15 kΩ
D1 : (0 V, 400 μA) D2 : (-9 V, 0 A )

(c) D1 reverse biased, D2 forward biased

6V − (−9V )
I D2 = = 500μA VD1 = 6 −15000I D2 = −1.50V
30kΩ
D1 : (−1.50 V, 0 A) D2 : (0 V, 500 μA)

(d) D1 and D2 forward biased

0 − (−6) V 9 − (0) V
I D2 = = 400μA I D1 = − I D2 = 200μA
15 kΩ 15 kΩ
D1 : (0 V, 200 μA) D2 : (0 V, 400 μA)

(b)

(a) D1 on, D2 on :
-0.75 − 0.75 − (−9) 6 − (−0.75)
I D2 = = 500μA | I D1 = 500μA − = 50.0μA
15kΩ 15kΩ
D1 : (50.0 μA, 0.75 V) D2 : (500 μA, 0.75 V)

56
(b) D1 on, D2 off :
6 − 0.75
I D2 = 0 | I D1 = = 350μA | VD2 = −9 − 0.75 = −9.75V
15kΩ
D1 : (350 μA, 0.75 V) D2 : (0 A, − 9.75 V)

(c) D1 off, D2 on :
6 − 0.75 − (−9)
I D1 = 0 | I D2 = = 475μA | VD1 = 6 −15x103 I D2 = −1.13V
30kΩ
D1 : (0 A, −1.13 V ) D2 : (475 μA, 0.75 V )

(d) D1 on, D2 on :
0.75 − 0.75 − (−6) 9 − 0.75
I D2 = = 400μA | I D1 = − 400μA = 150μA
15kΩ 15kΩ
D1 : (150 μA, 0.75 V) D2 : (400 μA, 0.75 V)

3.73 Diodes are labeled from left to right

10 − 0
(a) D1 on, D2 off, D3 on : I D2 = 0 | I D1 = = 0.990mA
3.3kΩ + 6.8kΩ
0 − (−5)
I D3 + 0.990mA = → I D3 = 1.09mA | VD2 = 5 − (10 − 3300I D1 ) = −1.73V
2.4kΩ
D1 : (0.990 mA, 0 V) D2 : (0 mA, −1.73 V) D3 : (1.09 mA, 0 V)

(b) D1 on, D2 off, D3 on : I D2 = 0 | I D3 = 0

I D1 =
(10 − 0)V = 0.495mA | VD2 = 5 − (10 − 8200I D1 )= −0.941V
8.2kΩ + 12kΩ
0 − (−5V )
I D3 = − I D1 = 0.005mA
10kΩ
D1 : (0.495 mA, 0 V ) D2 : (0 A, − 0.941 V ) D3 : (0.005 mA, 0 V )

57
(c) D1 on, D2 on, D3 on
0 − (−10) 0 − (2)
I D1 = V = 1.22mA > 0 | I12K = V = −0.167mA | I D2 = I D1 + I12K = 1.05mA > 0
8.2kΩ 12kΩ
2 − (−5)
I10K = V = 0.700mA | I D3 = I10K − I12K = 0.533mA > 0
10kΩ
D1 : (1.22 mA, 0 V ) D2 : (1.05 mA, 0 V ) D3 : (0.533 mA, 0 V )

(d) D1 off, D2 off, D3 on : I D1 = 0, I D2 = 0

12 − (−5)
= 1.21mA > 0 | VD1 = 0 − (−5 + 4700I D3 ) = −0.667V < 0
V
I D3 =
4.7 + 4.7 + 4.7 kΩ
VD2 = 5 − (12 − 4700I D3 ) = −1.33V < 0
D1 : (0 A, − 0.667 V ) D2 : (0 A, −1.33 V ) D3 : (1.21 mA, 0 V )

3.74 Diodes are labeled from left to right

10 − 0.6 − (−0.6)
(a) D1 on, D2 off, D3 on : I D2 = 0 | I D1 = = 0.990mA
3.3kΩ + 6.8kΩ
−0.6 − (−5)
I D3 + 0.990mA = → I D3 = 0.843mA | VD2 = 5 − (10 − 0.6 − 3300I D1 )= −1.13V
2.4kΩ
D1 : (0.990 mA, 0.600 V) D2 : (0 A, −1.13 V) D3 : (0.843 mA, 0.600V)

(b) D1 on, D2 off, D3 off : I D2 = 0 | I D3 = 0

10 − 0.6 − (−5)
I D1 = V = 0.477mA | VD2 = 5 − (10 − 0.6 − 8200I D1 )= −0.490V
8.2kΩ + 12kΩ + 10kΩ
VD3 = 0 − (−5 + 10000I D1 )= +0.230V < 0.6V so the diode is off
D1 : (0.477 mA, 0.600 V) D2 : (0 A, − 0.490 V) D3 : (0 A, 0.230 V)

(c) D1 on, D2 on, D3 on

−0.6 − (−9.4) V −0.6 − (1.4) V
I D1 = = 1.07mA > 0 | I12K = = −0.167mA
8.2 kΩ 12 kΩ
1.4 − (−5) V
I D2 = I D1 + I12K = 0.906mA > 0 | I10K = = 0.640mA | I D3 = I10K − I12K = 0.807mA > 0
10 kΩ
D1 : (1.07 mA, 0.600 V) D2 : (0.906 mA, 0.600 V) D3 : (0.807 mA, 0.600 V)

58
 (d) D1 off, D2 off, D3 on : I D1 = 0, I D2 = 0
11.4 − (−5) V
I D3 = = 1.16mA > 0 | VD1 = 0 − (−5 + 4700I D3 ) = −0.452V < 0
4.7 + 4.7 + 4.7 kΩ
VD2 = 5 − (11.4 − 4700I D3 ) = −0.948V < 0
D1 : (0 A, − 0.452 V ) D2 : (0 A, − 0.948 V ) D3 : (1.16 mA, 0.600 V )

3.75
*Problem 3.75(a) (Similar circuits are used for the other three cases.)
V1 1 0 DC 10
V2 4 0 DC 5
V3 6 0 DC -5
R1 2 3 3.3K
R2 3 5 6.8K
R3 5 6 2.4K
D1 1 2 DIODE
D2 4 3 DIODE
D3 0 5 DIODE
.MODEL DIODE D IS=1E-15 RS=0
.OP
.END

NAME D1 D2 D3
MODEL DIODE DIODE DIODE
ID 9.90E-04 -1.92E-12 7.98E-04
VD 7.14E-01 -1.02E+00 7.09E-01

NAME D1 D2 D3
MODEL DIODE DIODE DIODE
ID 4.74E-04 -4.22E-13 2.67E-11
VD 6.95E-01 -4.21E-01 2.63E-01

NAME D1 D2 D3
MODEL DIODE DIODE DIODE
ID 8.79E-03 1.05E-03 7.96E-04
VD 7.11E-01 7.16E-01 7.09E-01

NAME D1 D2 D3
MODEL DIODE DIODE DIODE
ID -4.28E-13 -8.55E-13 1.15E-03
VD -4.27E-01 -8.54E-01 7.18E-01

For all cases, the results are very similar to the hand analysis.

3.76

59
 10 − (−20)
I D1 = = 1.50mA | I D2 = 0
10kΩ + 10kΩ
0 − (−10)
I D3 = = 1.00mA | VD2 = 10 −10 4 I D1 − 0 = −5.00V
10kΩ
D1 : (1.50 mA, 0 V) D2 : (0 A,−5.00 V) D3 : (1.00 mA, 0 V)

3.77
*Problem 3.77
V1 1 0 DC -20
V2 4 0 DC 10
V3 6 0 DC -10
R1 1 2 10K
R2 4 3 10K
R3 5 6 10K
D1 3 2 DIODE
D2 3 5 DIODE
D3 0 5 DIODE
.MODEL DIODE D IS=1E-14 RS=0
.OP
.END
NAME D1 D2 D3
MODEL DIODE DIODE DIODE
ID 1.47E-03 -4.02E-12 9.35E-04
VD 6.65E-01 -4.01E+00 6.53E-01
The simulation results are very close to those given in Ex. 3.8.

3.78
3.9kΩ
VTH = 24V = 6.28V | RTH = 11kΩ 3.9kΩ = 2.88kΩ
3.9kΩ + 11kΩ
6.28 − 4
IZ = = 0.792mA > 0 | (I Z ,VZ )= (0.792 mA,4 V )
2.88kΩ

60
3.79
−6.28
−6.28 = 2880I D + VD | I D = 0,VD = −6.28V | VD = 0, I D = = −2.18mA
2880
-6 -5 -4 -3 -2 -1

v
D

Q-point
-1 mA

-2 mA

i
D
Q-Point: (-0.8 mA, -4 V)

3.80
27 − 9 9V
IS = = 1.20mA → I L < 1.20 mA | RL > = 7.50 kΩ
15kΩ 1.2mA

3.81
27 − 9
IS = = 1.20mA | P = (9V )(1.20mA) = 10.8 mW
15kΩ

3.82
VS − VZ VZ VS ⎛ 1 1⎞
IZ = − = − VZ ⎜ + ⎟ | PZ = VZ I Z
RS RL RS ⎝ RS RL ⎠
30V ⎛ 1 1 ⎞
I Znom = − 9V ⎜ + ⎟ = 0.500 mA | PZ = 9V (0.500mA)= 4.5 mW
nom

15kΩ ⎝ 15kΩ 10kΩ ⎠

30V (1.05) ⎛ 1 1
⎞
I Zmax = − 9V (0.95)⎜⎜ + ⎟ = 0.796 mA
15kΩ(0.95) ⎝ 15kΩ (0.95) 10kΩ(1.05) ⎟
⎠
PZmax = 9V (.95)(0.796mA)= 6.81 mW
30V (0.95) ⎛ 1 1
⎞
I min
= − 9V (1.05)⎜
⎜ + ⎟ = 0.215 mA
15kΩ(1.05) ( ) ⎟
Z
⎝ 15kΩ 1.05 10kΩ(0.95) ⎠
PZmin = 9V (1.05)(0.215mA)= 2.03 mW

3.83
100Ω 24 −15
(a) VTH = 60V = 24.0V | RTH = 150Ω 100Ω = 60Ω | I Z = = 150 mA
150Ω + 100Ω 60
60 −15
P = 15I Z = 2.25 W | (b) I Z = = 300 mA | P = 15I Z = 4.50 W
150

61
3.84
VS − VZ VZ VS ⎛ 1 1⎞
IZ = − = − VZ ⎜ + ⎟ | PZ = VZ I Z
RS RL RS ⎝ RS RL ⎠

I Znom =
(60 −15)V − 15V = 150 mA | PZnom = 15V (150mA) = 2.25 W
150Ω 100Ω
60V (1.1) ⎛ 1 1 ⎞
I Zmax = −15V (0.90)⎜⎜ + ⎟ = 266 mA
150Ω(0.90) ⎝ 150Ω(0.90) 100Ω(1.1) ⎟
⎠
PZmax = 15V (0.90)(266mA)= 3.59 W
60V (0.90) ⎛ 1 1 ⎞
I Zmin = −15V (1.1)⎜⎜ + ⎟ = 43.9 mA
150Ω(1.1) ⎝ 150Ω(1.1) 100Ω(0.9) ⎟
⎠
PZmin = 15V (1.1)(43.9mA)= 0.724 W

3.85
Using MATLAB, create the following m-file with f = 60 Hz:
function f=ctime(t)
f=5*exp(-10*t)-6*cos(2*pi*60*t)+1;
Then: fzero('ctime',1/60) yields ans = 0.01536129698461
and T = (1/60)-0.0153613 = 1.305 ms.
1 2Vr IT 5
ΔT = | Vr = = = 0.8333V
120π VP C 0.1(60)

1 2(0.8333)
ΔT = = 1.40 ms
120π 6

3.86
⎛ I ⎞ ⎛ 48.6 A ⎞
VD = nVT ln⎜1+ D ⎟ = 2(0.025V )ln⎜1+ −9 ⎟ = 1.230 V
⎝ IS ⎠ ⎝ 10 A ⎠

62
3.87
⎛ I ⎞
Von = nVT ln⎜1+ D ⎟ | VD = Von + I D RS
⎝ IS ⎠
⎛ 100 A ⎞
VD = 1.6(0.025V )ln⎜1+ −8 ⎟ + 100 A(0.01Ω) = 1.92 V
⎝ 10 A ⎠
I ΔT ⎛100 A ⎞⎛ 1ms ⎞
Pjunction ≅ Von I DC = Von P = 0.92V ⎜ ⎟⎜ ⎟ = 2.75 W
2T ⎝ 2 ⎠⎝16.7ms ⎠
4⎛ T ⎞ 2 4 ⎛16.7ms ⎞
⎟(3A) 0.01Ω = 2.00 W
2
PR ≅ ⎜ ⎟ I DC RS = ⎜
3 ⎝ ΔT ⎠ 3 ⎝ 1ms ⎠
Ptotal = 4.76 W

3.88
1 T
1⎡ TVr ⎤ ⎡ 0.05(VP − Von )⎤
VDC =
T
∫ v (t )dt = T ⎢⎣(VP − Von )T − ⎥ = ⎢(VP − Von )−
2 ⎦ ⎢⎣ 2
⎥ = 0.975(VP − Von )
⎥⎦
0

VDC = 0.975(18V )= 17.6 V

3.89
2
1 T
1 ΔT 2 ⎛ t ⎞
PD =
T
∫ i (t )RS dt = T ∫ I P ⎜⎝1− ΔT ⎟⎠ RS dt
2
D
0 0
2 ΔT
I2R ⎛ 2t t2 ⎞ ΔT
I P2 RS ⎛ t2 t3 ⎞
PD = P S ∫ ΔT ΔT 2
⎜1− + ⎟ dt = ⎜ t −
T ⎝ ΔT 3ΔT 2 ⎠
+ ⎟
T 0 ⎝ ⎠ 0

I R ⎛
2
ΔT ⎞ 1 2 ⎛ ΔT ⎞
PD = P S ⎜ΔT − ΔT + ⎟ = I P RS ⎜ ⎟
T ⎝ 3 ⎠ 3 ⎝ T ⎠

3.90
Using SPICE with VP = 10 V.
15V
Voltage

10V

5V

0V

-5V

-10V

t
-15V
0s 10ms 20ms 30ms 40ms 50ms

63
3.91

(
(a) Vdc = −(VP − Von ) = − 6.3 2 −1 = −7.91V) (b) C =
I T 7.91 1 1
=
Vr 0.55 0.5 60
= 1.05F

(c) PIV ≥ 2VP = 2 ⋅ 6.3 2 = 17.8V (d) I surge = ωCVP = 2π (60)(1.05) 6.3 2 = 3530 A ( )
2Vr
1 1 2(.25) 2T 7.91 2 1
(e) ΔT = = = 0.628ms | I P = I dc = = 841A
ω VP 2π (60) 6.3 2 ΔT .5 60 .628ms

3.92
( )
VOnom = −(VP − Von )= − 6.3 2 −1 = −7.91V

( ) [ ]
VOmax = − VPmax − Von = − 6.3(1.1) 2 −1 = −8.80V

VOmin = −(V P
min
− Von )= −[6.3(0.9) 2 −1]= −7.02V
Circuit3_93b-Transient-8 Time (s)

3.93 +0.000e+000 +10.000m +20.000m +30.000m +40.000m +50.000m +60.000m +70.000m

*Problem 3.93 +10.000

VS 1 0 DC 0 AC 0 SIN(0 10 60)
D1 2 1 DIODE +5.000

R 2 0 0.25
C 2 0 0.5 +0.000e+000

.MODEL DIODE D IS=1E-10 RS=0

.OPTIONS RELTOL=1E-6 -5.000

.TRAN 1US 80MS

.PRINT TRAN V(1) V(2) I(VS) -10.000

.PROBE V(1) V(2) I(VS) V(2) *REAL(Rectifier)*

.END

SPICE Graph Results: VDC = 9.29 V, Vr = 1.05 V, IP = 811 A, ISC = 1860 A

I T 9.00V 1 1
Vdc = −(VP − Von ) = −(10 −1)= −9.00V | Vr = = = 1.20V
C 0.25Ω 60s 0.5F
1 2Vr 1 2(1.2)
I SC = ωCVP = 2π (60)(0.5)(10)= 1890 A | ΔT = = = 1.30ms
ω VP 2π (60) 10
2T 9 2 1
I P = I dc = = 923A
ΔT 0.25 60 1.3ms

64
 Circuit3_93b-Transient-11 Time (s)

(Amp) +0.000e+000 +20.000m +40.000m +60.000m +80.000m +100.000m +120.000m +140.000m

+10.000

+5.000

+0.000e+000

-5.000

-10.000

V(1) V(2) *REAL(Rectifier)*

SPICE Graph Results: VDC = -6.55 V, Vr = 0.58 V, IP = 150 A, ISC = 370 A

Note that a significant difference is caused by the diode series resistance.

3.94
(a) Vdc = −(VP − Von )= − 6.3 2 −1 = −7.91V ( ) (b) C =
I T 7.91 1 1
=
Vr 0.25 0.5 400
= 0.158F

(c) PIV ≥ 2VP = 2 ⋅ 6.3 2 = 17.8V (d ) I surge = ωCVP = 2π (400)(0.158) 6.3 2 = 3540 A ( )
1 2Vr 1 2(.25) 2T 7.91 2 1
(e) ΔT = = = 94.3μs | I P = I dc = = 839 A
ω VP 2π (400) 6.3 2 ΔT .5 400 94.3μs

3.95
(a) Vdc = −(VP − Von )= − 6.3 2 −1 = −7.91V ( ) (b) C =
I T 7.91 1 1
=
Vr 0.25 0.5 105
= 633μF

(c) PIV ≥ 2VP = 2 ⋅ 6.3 2 = 17.8V ( )

(d ) I surge = ωCVP = 2π 105 (633μF ) 6.3 2 = 3540 A ( )
1 2Vr 1 2(.25) 2T 7.91 2 1
(e) ΔT = = = 0.377μs | I P = I dc = = 839 A
ω VP 2π 105 ( ) 6.3 2 ΔT .5 10 0.377μs
5

3.96

65
 IT 1 1
(a) C = = = 556 μF (b) PIV ≥ 2VP = 2 ⋅ 3000 = 6000V
Vr 3000(0.01) 60
3000 1 2Vr 1
(c) Vrms = = 2120 V (d ) ΔT = = 2(0.01) = 0.375ms
2 ω VP 2π (60)
2T ⎛ 2 ⎞⎛ 1 ⎞
I P = I dc = 1⎜ ⎟⎜ ⎟ = 88.9 A (e) I surge = ωCVP = 2π (60)(556μF )(3000)= 629 A
ΔT ⎝ 60 ⎠⎝ 0.375ms ⎠

3.97 Assuming Von = 1 V:

V − Von 1 1 ⎛ 1 ⎞⎛ 30 ⎞ 3.3 + 1
C= P T = ⎜ ⎟⎜ ⎟ = 6.06 F | PIV = 2VP = 2(3.3 + 1)V = 8.6 V | Vrms = = 3.04 V
Vr R 0.025 ⎝ 60 ⎠⎝ 3.3⎠ 2
1 2T VP − Von 1 2 ⎛ 1 ⎞⎛ 3.3V ⎞
ΔT = = ⎜ s⎟⎜ ⎟ = 0.520 ms
ω RC VP 2π (60) 0.110Ω(6.06F )⎝ 60 ⎠⎝ 4.3V ⎠
2T ⎛ 2 ⎞⎛ 1 ⎞
I P = I dc = 30⎜ s ⎟⎜ ⎟ = 1920 A | I surge = ωCVP = 2π (60 / s)(6.06F )(4.3V ) = 9820 A
ΔT ⎝ 60 ⎠⎝ 0.520ms ⎠

3.98
40V

vO

20V

v1

0V

vS

Time
-20V
0s 5ms 10ms 15ms 20ms 25ms 30ms VDC = 2(VP - Von) = 2(17 - 1) = 32 V.

3.99
*Problem 3.99
VS 2 1 DC 0 AC 0 SIN(0 1500 60)
D1 2 3 DIODE
D2 0 2 DIODE
C1 1 0 500U
C2 3 1 500U
RL 3 0 3K
.MODEL DIODE D IS=1E-15 RS=0
.OPTIONS RELTOL=1E-6
.TRAN 0.1MS 100MS
.PRINT TRAN V(2,1) V(3) I(VS)

66
.PROBE V(3) V(2,1) I(VS)
.END
4.0kV

3.0kV
vO

2.0kV

1.0kV

vS

0V

-1.0kV

Time
-2.0kV
0s 20ms 40ms 60ms 80ms 100ms

Simulation Results: VDC = 2981 V, Vr = 63 V

The doubler circuit is effectively two half-wave rectifiers connected in series. Each capacitor is
discharged by I = 3000V/3000 = 1 A for 1/60 second. The ripple voltage on each capacitor is
33.3 V. With two capacitors in series, the output ripple should be 66.6 V, which is close to the
simulation result.

3.100
I ⎛ T ⎞ 20.2V ⎛ 1 ⎞⎛ 1 ⎞
( )
(a) Vdc = −(VP − Von ) = − 15 2 −1 = −20.2 V (b) C = ⎜ ⎟= ⎜ ⎟⎜ ⎟ = 1.35 F
Vr ⎝ 2 ⎠ 0.5Ω ⎝ 0.25V ⎠⎝120s ⎠
(c) PIV ≥ 2VP = 2 ⋅15 2 = 42.4 V ( )
(d ) I surge = ωCVP = 2π (60)(1.35) 15 2 = 10800 A

1 2Vr 1 2(.25) T 20.2V ⎛ 1 ⎞ 1

(e) ΔT = = = 0.407 ms | I P = I dc = ⎜ s⎟ = 1650 A
ω VP 2π (60) 15 2 ΔT 0.5Ω ⎝ 60 ⎠ 0.407ms

3.101
I ⎛ T ⎞ 11.7V ⎛ 1 ⎞⎛ 1 ⎞
( )
(a) Vdc = −(VP − Von )= − 9 2 −1 = −11.7 V (b) C = ⎜ ⎟= ⎜ ⎟⎜ ⎟ = 0.780 F
Vr ⎝ 2 ⎠ 0.5Ω ⎝ 0.25V ⎠⎝120s ⎠
(c) PIV ≥ 2VP = 2 ⋅ 9 2 = 25.5 V ( )
(d ) I surge = ωCVP = 2π (60)(0.780) 9 2 = 3740 A

1 2Vr 1 2(.25) T 11.7V ⎛ 1 ⎞⎛ 1 ⎞

(e) ΔT = = = 0.526 ms | I P = I dc = ⎜ s⎟⎜ ⎟ = 958 A
ω VP 2π (60) 9 2 ΔT 0.5Ω ⎝ 60 ⎠⎝ 0.407ms ⎠

67
3.102 20V
*Problem 3.102
VS1 1 0 DC 0 AC 0 SIN(0 14.14 400)
VS2 0 2 DC 0 AC 0 SIN(0 14.14 400)
D1 3 1 DIODE 10V

D2 3 2 DIODE vS
C 3 0 22000U
R303
.MODEL DIODE D IS=1E-10 RS=0 0V

.OPTIONS RELTOL=1E-6
.TRAN 1US 5MS
.PRINT TRAN V(1) V(2) V(3) I(VS1) -10V

.PROBE V(1) V(2) V(3) I(VS1) vO

.END
Time
-20V
0s 1.0ms 2.0ms 3.0ms 4.0ms 5.0ms

Simulation Results: VDC = -13.4 V, Vr = 0.23 V, IP = 108 A

13.4 1 1
VDC = VP − Von = 10 2 − 0.7 = 13.4 V | Vr = = 0.254 V
3 800 22000μF
1 2Vr 1 2(0.254)
ΔT = = = 0.504 ms
120π VP 120π 14.1
T 13.4V 1 1
I P = I dc = s = 150 A
ΔT 3Ω 60 0.504 ms
Simulation with RS = 0.02 Ω.
Circuit3_102-Transient-15 Time (s)

+0.000e+000 +2.000m +4.000m +6.000m +8.000m +10.000m +12.000m +14.000m

+15.000

+10.000

+5.000

+0.000e+000

-5.000

-10.000

-15.000

V(1) V(2) *REAL(Rectifier)*

Simulation Results: VDC = -12.9 V, Vr = 0.20 V, IP = 33.3 A, ISC = 362 A. RS results in a

significant reduction in the values of IP and ISC.

68
3.103
VP − Von 1 1 ⎛ 1s ⎞⎛ 30 A ⎞
(a) C = T = ⎜ ⎟⎜ ⎟ = 3.03 F (b) PIV = 2VP = 2(3.3 + 1)V = 8.6 V
Vr R 0.025 ⎝120 ⎠⎝ 3.3V ⎠

3.3 + 1 1 2Vr 1 2(0.025)(3.3)

(c) Vrms = = 3.04 V (d) ΔT = = = 0.520 ms
2 ω VP 2π (60) 4.3
⎛ 1 ⎞⎛ 1 ⎞
⎟ = 962 A | I surge = ωCVP = 2π (60 / s)(3.03F )(4.3V )= 4910 A
T
(e) I P = I dc = 30 A⎜ s ⎟⎜
ΔT ⎝ 60 ⎠⎝ 0.520ms ⎠

3.104
I T 1 1
(a) C = = = 139 μF (b) PIV ≥ 2VP = 6000 V
Vr 2 3000(0.01) 2 ⋅120
3000 1 1
2(0.01) = 0.375 ms
Vr
(c) VS = = 2120 V (d ) ΔT = 2 =
2 ω VP 2π (60)
⎛ 1 ⎞⎛ 1 ⎞
(e) I surge = ωCVP = 2π (60 / s)(139μF )(3000V )= 157 A
T
I P = I dc = 1⎜ s ⎟⎜ ⎟ = 44.4 A
ΔT ⎝ 60 ⎠⎝ 0.375ms ⎠

3.105
The circuit is behaving like a half-wave rectifier. The capacitor should charge during the first
1/2 cycle, but it is not. Therefore, diode D1 is not functioning properly. It behaves as an open
circuit.

3.106
I ⎛ T ⎞ 19.2V ⎛ 1 ⎞⎛ 1 ⎞
( )
(a) Vdc = −(VP − 2Von )= − 15 2 − 2 = −19.2 V (b) C = ⎜ ⎟= ⎜ ⎟⎜ s⎟ = 1.28 F
Vr ⎝ 2 ⎠ 0.5Ω ⎝ 0.25V ⎠⎝ 120 ⎠
(c) PIV ≥ VP = 15 2 = 21.2 V ( )
(d ) I surge = ωCVP = 2π (60 / s)(1.28F ) 15 2 = 10200 A

12Vr 1 2(.25) T 19.2V ⎛ 1s ⎞⎛ 1 ⎞

(e) ΔT = = = 0.407 ms | I P = I dc = ⎜ ⎟⎜ ⎟ = 1570 A
ω VP 2π (60) 15 2 ΔT 0.5Ω ⎝ 60 ⎠⎝ 0.407ms ⎠

3.107
I ⎛T ⎞ 1A ⎛ 1 ⎞
(a) C = ⎜ ⎟= ⎜ s⎟ = 278 μF (b) PIV ≥ VP = 3000 V
Vr ⎝ 2 ⎠ 3000V (0.01)⎝ 120 ⎠
3000 1
2Vr 1
(c) VS = = 2120 V (d ) ΔT = = 2(0.01) = 0.375 ms
2 ω VP 2π (60)
⎛1 ⎞ 1
(e) I surge = ωCVP = 2π (60)(278μF )(3000) = 314 A
T
I P = I dc = 1A⎜ s⎟ = 44.4 A
ΔT ⎝ 60 ⎠ 0.375ms

69
3.108
I ⎛T ⎞ 30 A ⎛ 1 ⎞
(a) C = ⎜ ⎟= ⎜ s⎟ = 3.03 F (b) PIV ≥ Vdc + 2Von = (3.3 + 2) = 5.3 V
Vr ⎝ 2 ⎠ (0.025)(3.3V )⎝ 120 ⎠

5.3 1 2Vr 1 ⎡ 0.025(3.3)⎤

(c) Vrms = = 3.75 V (d ) ΔT = = 2⎢ ⎥ = 0.468 ms
2 ω VP 2π (60) ⎢⎣ 5.3 ⎥⎦
⎛1 ⎞ 1
(e) I surge = ωCVP = 2π (60 / s)(3.03F )(3.3V )= 3770 A
T
I P = I dc = 30 A⎜ s⎟ = 1070 A
ΔT ⎝ 60 ⎠ 0.468ms

3.109
V1 = VP - Von = 49.3 V and V2 = -(VP -Von) = -49.3V.

3.110
40V
*Problem 3.110
VS1 1 0 DC 0 AC 0 SIN(0 35 60) v1

VS2 0 2 DC 0 AC 0 SIN(0 35 60)

D1 1 3 DIODE 20V

D4 2 3 DIODE
D2 4 1 DIODE
D3 4 2 DIODE
C1 3 0 0.1 0V

C2 4 0 0.1
R1 3 0 500
R2 4 0 500 -20V

.MODEL DIODE D IS=1E-10 RS=0

.OPTIONS RELTOL=1E-6 v2

.TRAN 10US 50MS Time

.PRINT TRAN V(3) V(4) -40V

0s 10ms 20ms 30ms 40ms 50ms

.PROBE V(3) V(4)

.END

3.111
I ⎛ T ⎞ 19.2V ⎛ 1 ⎞⎛ 1 ⎞
( )
(a) Vdc = −(VP − 2Von )= − 15 2 − 2 = −19.2 V (b) C = ⎜ ⎟= ⎜ ⎟⎜ ⎟ = 1.28 F
Vr ⎝ 2 ⎠ 0.5Ω ⎝ 0.25⎠⎝120 ⎠
(c) PIV ≥ VP = 15 2 = 21.2 V ( )
(d ) I surge = ωCVP = 2π (60 / s)(1.28F ) 15V 2 = 10200 A

12Vr 1 2(.25) T 19.2V ⎛ 1 ⎞⎛ 1 ⎞

(e) ΔT = = = 0.407 ms | I P = I dc = ⎜ s ⎟⎜ ⎟ = 1570 A
ω VP 2π (60) 15 2 ΔT 0.5Ω ⎝ 60 ⎠⎝ 0.407ms ⎠

70
3.112
3.3-V, 15-A power supply with Vr ≤ 10 mV. Assume Von = 1 V.

Rectifier Type Half Wave Full Wave Full Wave Bridge

Peak Current 533 A 266 A 266 A
PIV 8.6 V 8. 6 V 5.3 V
Filter 25 F 12.5 F 12.5 F
Capacitor
(i) The large value of C suggests we avoid the half-wave rectifier. This will reduce the cost
and size of the circuit.
(ii) The PIV ratings are all low and do not indicate a preference for one circuit over another.
(iii) The peak current values are lower for the full-wave and full-wave bridge rectifiers and
also indicate an advantage for these circuits.
(iv) We must choose between use of a center-tapped transformer (full-wave) or two extra
diodes (bridge). At a current of 15 A, the diodes are not expensive and a four-diode bridge
should be easily found. The final choice would be made based upon cost of available
components.

3.113
200-V, 3-A power supply with Vr ≤ 4 V. Assume Von = 1 V.

Rectifier Type Half Wave Full Wave Full Wave Bridge

Peak Current 189 A 94.3 A 94.3 A
PIV 402 V 402 V 202 V
Filter 12,500 μF 6250 μF 6250 μF
Capacitor
(i) The the half-wave rectifier requires a larger value of C which may lead to more cost.
(ii) The PIV ratings are all low enough that they do not indicate a preference for one circuit
over another.
(iii) The peak current values are lower for the full-wave and full-wave bridge rectifiers and
also indicate an advantage for these circuits.
(iv) We must choose between use of a center-tapped transformer (full-wave) or two extra
diodes (bridge). At a current of 3 A, the diodes are not expensive and a four-diode bridge
should be easily found. The final choice would be made based upon cost of available
components.

71
3.114
3000-V, 1-A power supply with Vr ≤ 120 V. Assume Von = 1 V.

Rectifier Type Half Wave Full Wave Full Wave Bridge

Peak Current 133 A 66.6 A 66.6 A
PIV 6000 V 6000 V 3000 V
Filter 41.7 μF 20.8 μF 20.8 μF
Capacitor
(i) A series string of multiple capacitors will normally be required to achieve the voltage
rating.
(ii) The PIV ratings are high, and the bridge circuit offers an advantage here.
(iii) The peak current values are lower for the full-wave and full-wave bridge rectifiers but
neither is prohibitively large.
(iv) We must choose between use of a center-tapped transformer (full wave) or extra diodes
(bridge). With a PIV of 3000 or 6000 volts, multiple diodes may be required to achieve the
require PIV rating.

3.115
5 − VD 5 − 0.6
( )
iD 0 + =
5V
1kΩ
= 5 mA | I F =
1kΩ
=
1kΩ
= 4.4 mA

−3 − 0.6 ⎛ 4.4mA ⎞
Ir = = −3.6 mA | τ S = (7ns) ln⎜1− ⎟ = 5.59 ns
1kΩ ⎝ −3.6mA ⎠

3.116 10
*Problem 3.143 - Diode Switching Delay
V1 1 0 PWL(0 0 0.01N 5 10N 5 10.02N -3
20N -3)
R1 1 2 1K 5
v1
D1 2 0 DIODE
.TRAN .01NS 20NS
vD
.MODEL DIODE D TT=7NS IS=1E-15
.PROBE V(1) V(2) I(V1) 0

.OPTIONS RELTOL=1E-6
.OP
.END -5

Time
-10
0s 5ns 10ns 15ns 20ns

Simulation results give S = 4.4 ns.

72
3.117
5 − Von 5 − 0.6
iD 0 + = ( )
5V
5Ω
= 1 A | IF =
5Ω
=
1Ω
= 0.880 A

−3 − 0.6 ⎛ 0.880 A ⎞
IR = = −0.720 A | τ S = (250ns) ln⎜1− ⎟ = 200 ns
5Ω ⎝ −0.720 A ⎠

3.118 2.0

*Problem 3.145(a) - Diode Switching Delay

V1 1 0 DC 1.5 PWL(0 0 .01N 1.5 7.5N 1.5 v1

7.52N -1.5 15N -1.5) 1.0

R1 1 2 0.75K vD
D1 2 0 DIODE
.TRAN .02NS 100NS 0

.MODEL DIODE D TT=50NS IS=1E-15

CJO=0.5PF
.PROBE V(1) V(2) I(V1) -1.0

.OPTIONS RELTOL=1E-6
.OP
.END
Time
-2.0
0s 5ns 10ns 15ns 20ns 25ns

For this case, simulation yields S = 3 ns.

*Problem 3.145(b) - Diode Switching Delay

V1 1 0 DC 1.5 PWL(0 1.5 7.5N 1.5 7.52N -1.5 15N -1.5)
R1 1 2 0.75K
D1 2 0 DIODE
.TRAN .02NS 100NS
.MODEL DIODE D TT=50NS IS=1E-15 CJO=0.5PF
.PROBE V(1) V(2) I(V1)
.OPTIONS RELTOL=1E-6
.OP
.END
2.0

v1

1.0

vD

-1.0

Time
-2.0
0s 10ns 20ns 30ns 40ns

For this case, simulation yields S = 15.5 ns.

73
In case (a), the charge in the diode does not have time to reach the steady-state value given by Q
= (1mA)(50ns) = 50 pC. At most, only 1mA(7.5ns) = 7.5 pC can be stored in the diode. Thus is
turns off more rapidly than predicted by the storage time formula. It should turn off in
approximately t = 7.5pC/3mA = 2.5 ns which agrees with the simulation results. In (b), the
diode charge has had time to reach its steady-state value. Eq. (3.103) gives: (50 ns) ln (1-1mA/(-
3mA)) = 14.4 ns which is close to the simulation result.

3.119
[ ]
IC = 1−10−15 exp(40VC )−1 A | For VC = 0, I SC = 1A
1 ⎛ 1 ⎞
VOC = ln⎜1+ −15 ⎟ = 0.864 V
40 ⎝ 10 ⎠

[ [
P = VC IC = VC 1−10−15 exp(40VC )−1 ]]
dP
dVC
[ ]
= 1−10−15 exp(40VC )−1 − 40x10−15 VC exp(40VC ) = 0

Using the computer to find VC yields VC = 0.7768 V, IC = 0.9688 A, and Pmax = 7.53 Watts

3.120
(a) For VOC, each of the three diode teminal currents must be zero, and
1
[ ]
VOC = VC1 + VC 2 + VC 3 = V ln(1.05x1015 )+ ln(1.00x1015 )+ ln(0.95x1015 ) = 2.59 V
40
(b) For ISC, the external currents cannot exceed the smallest of the short circuit current
of the individual diodes. Thus, ISC = min[1.05A,1.00A,0.95A] = 0.95 A
Note that diode three will be reversed biased in part (b).
Using the computer to find VC yields VC = 0.7768 V, IC = 0.9688 A, and Pmax = 7.53 Watts

3.121
hc
λ=
E

(a) λ =
( ) = 1.11 μm - far infrared
6.625x10−34 J − s 3x108 m / s
1.12eV (1.602x10 j / eV )
−19

6.625x10 J − s(3x10 m / s)
−34 8

(b) λ = = 0.875 μm - near infrared

1.42eV (1.602x10 j / eV )
−19

74