1

V D V BI TP TNH CHT IN
Tnh cht ca Si v Ge
Tnh cht
S nguyn t (s th t)
Khi lng ngt
Khi lng ring, g /cm3
S nguyn t / cm3
Cu trc tinh th
Hng s mng, aAo
Eg, eV ( 3000K)
ni, cm3 (3000K)
in tr sut, .cm (3000K)
n, cm2 / Vs (3000K)
p, cm2 / Vs (3000K)

Si
14
28,1
2,33
5,0.1022
Kim cng
5,43
1,1
1,5.1010
230.000
1300
500

Ge
32
72,6
5,32
4,4.1022
Kim cng
5,66
0,72
2,5.1013
45
3800
1800

PHN V D
1) 550oC dn in ca NaCl rn c xem nh l do s chuyn dch ca cc
cation v r(Na+) R(Cl-).
Tnh chuyn dch ca Na+ nu dn in l 2.10-6 -1cm-1.
Gii: = nq
So
chat
mang( Na )
4 Na / o
cs

= 2,3.1022 ion/cm3
3
8 3
cm
[2(0,98 1,81).10 ] cm 3 / o
cs

2.10 6

=
= 5,5.10-10 cm2/Vs
qn (1,6.10 19 )(2,3.10 22 )

n=

2) Mt bn dn Si cha 0,00001% nguyn t Al v c in tr sut 2,45 ..cm.

a) Tnh s l/cm3. Bit d(Si) = 2,4 g/cm3, M(Si) = 28,1 g/mol.
b) Tnh chuyn dch ca l.
Gii: a) C 1 ngt Al s to ra 1 l
T 0,00001% Al c 107 ngt Si c 1 ngt Al c 1l
3

S ngt Si/cm =

d x AN 2,4g / cm 3 x 6,02.10 23 ngt

/ mol

=
M
28,1 g / mol

5,13.1022 ngt Si/cm3

S l/cm3 = 5,13.1022/107 = 5,13.1015

c) =

1
1
cm 2

500
qn ( 2,45)(1,6.10 19 )(5,13.1015 )
Vs

3) Tnh phn e ha tr trong Si c hot ha vo min dn 300K. Bit 300K, Si

c = 2,3.105 .cm, n = 1300 cm2/Vs, p = 500 cm2/Vs.
Gii: Vi bn dn nguyn cht: =

1
nq ( n p )

1
S e dn/cm3 = n = q( ) 1,51 .1010 e dn/cm3
n
p

tm phn ha tr c kch thch nhit i t min ha tr ti min dn, ta cn bit s

e c trong min ha tr khi min ny cn y ( nhit rt thp)
Si c cu hnh 1 s2 2s2 2p6 3s2 3p2 C 4 e ha tr/ngt Si.
Si c cu trc kim cng ( 8 ngt/ c s) c 4 x 8 = 32 e ha tr/ c s
aSi = 5,43Ao Th tch c s l (5,43.10-8)3 cm3
S e ha tr/cm3 =

So
e hoa
tr/o
cs
32

2.10 23 e ha tr/cm3
The
tch/o
cs
(5,43.10 8 ) 3

Phn e ha tr c dn vo min dn:

2.10 23 / cm 3
1,32.1013
10
3
1,51.10 / cm

C 1,32.1013 e ha tr th mi c 1 e i vo min dn

T s ny rt thp cn c ph gia c nhiu e hn vo min dn.

4) i vi kim loi, in tr sut s tng khi tng nhit .
o

T hoc
( T To)
0
o

: H s nhit

o: in tr sur To = 0oC
in tr sut ca Cu tng 0,4% khi nhit tng 1 oC. Hi nhit no th in tr
sut ca Cu gp i in tr sut 0oC
/ 0 0,004

0,004
T
1
o
2 o
(T To ) 2 o o
(T 0)
T
o
o

Gii: = 0,004, T = 1 =
0

C 1

250 o C
1= TT=
0,004 o C 1

PHN BI TP
1) Tungsten c d = 18,8 g/cm3, M = 184. Nng e t do l 1,23. 1023/cm3. Tnh s e
t do trn 1 nguyn t.
p s: 2
2) Bit Ge nguyn cht c n = 3900 cm2/Vs, p = 1900 cm2/Vs. Tnh phn dn in
ca Ge do dn e v do dn l.
p s: Phn do dn e = 0,67 v do dn l 0,33.
3) Tm nhit Ge c dn in = 2 dn in 20 oC, bit Eg = 0,72 eV, k =
1,38.10-16 erg/K, 1eV = 1,6.10-12 erg v s ph thuc dn vo nhit theo cng
thc: = oe-Eg/2kT o: hng s.
p s: 35 0C
4) Bn dn loi p c E A = 0,1 eV. nhit 20 oC s l dn ca tp cht/cm 3 ln hn
rt nhiu so vi s l dn ca nguyn cht/cm 3. dn in ca bn dn ny 20 oC l
10 -1cm-1. Tnh dn in 0oC, bit k = 8,61.10-5 eV.K-1.
p s: 7,48 -1cm-1.

5) dn in ca Si nguyn cht l 5.10-6 -1cm-1 50oC

a) Tnh nng ca l v nng ca e dn trong Si 50 oC, bit n = 1300 cm2/Vs,
v p = 500 cm2/Vs).
p s: n = p = ni = pi = 1,74.1010/cm3
b) Tnh phn e dn/e ha tr trong Si 50oC. Bit dSi = 2,4 g/cm3, MSi = 28,1.
p s: 8,5.10-14
6) Si c t trng 2,4 g/cm3.
1) Tnh s nguyn t Si/cm3. p s: 5.1022 ngt/cm3
2) Thm P vo Si to bn dn loi n c dn in 1-1cm-1 v n = 1700 cm2/Vs.
Tnh s e dn/cm3. p s: 3,68.1015 e dn/cm3
3) Tnh s nguyn t Si to ra 1 e dn.
4) Si c mng tinh th ging kim cng vi a = 5,42 Ao. Tnh th tch cha 1 e dn.
5) Tnh s c s cha 1 e dn.
7) Ge c in tr sut 2 .cm, p = 1,9.1015 l/cm3
a) Tnh chuyn dch ca l. p s: 1645 cm2/Vs.
b) Nguyn t no c th cho vo Ge to bn dn loi p, loi n.
8) Bn dn Ge c to thnh bng cch nu chy 3,22.10-6 g Sb vi 100 g Ge.
a) Bn dn l loi p hay loi n.
b) Tnh s ngt Sb/cm3 trong Ge ( = tnh nng Sb trong Ge theo ngt/cm3)
Bit dGe = 5,36 g/cm3, dSb = 6,62 g/cm3, MGe = 72,59, MSb = 121,75.
p s: b) 8,54.1014 Sb/cm3
9) 727oC th 80% in tch trong NaCl c mang bi Na+ v 20 % bi Cl-.
Bit rng:

qD

nq
kT

D: H s khuch tn, k: hng s Boltzman.

Tnh D(Na+) nu dn in tng = 2,5.10 -4 -1cm-1. Bit r(Na+) = 0,98 A0, R(Cl-) =
1,81 A0, k = 1,38 x 10-16 erg/K
p s: 4,7.10-9 cm2/s
10) Trong cu trc FeO (ging NaCl) c Fe 3+ vi Fe3+/Fe2+ = 0,1. Tnh chuyn dch
ca nt trng nu dn in l 1-1cm-1 v 99% in tch c mang bi nt trng
(hng s mng ca FeO, a = 4,3 Ao).
p s: 1,4.10-3 cm2/Vs
11) Trong mng NiO c tn ti Ni 3+cng vi Ni2+, EA= 0,1eV, Eg = 1,1eV, k = 8,61 x
10-5 eV/K. dn in ca NiO ( khi khng c Ni3+) tnh theo T = oexp(-Eg/2kT)
dn in ca NiO ( khi c Ni3+) tnh theo T = o exp (-EA/kT).
So snh dn in ca NiO khi c v khng c Ni3+ 27oC, rt ra nhng nhn xt g
v dn in, c ch dn nh th no.
p s: 3,68.107

12) Cho cc cht sau (1) Si 1-xPx v (2) Si1-xAlx vi x l phn nguyn t ph gia/nguyn
cht. Bit i vi bn dn nguyn cht dn in = 0 exp(-Eg/2kT), bn dn loi
n: = 0 exp(-ED/kT), bn dn loi p: = 0 exp(-EA/kT). Nu xem 0 khng i v k
= 8,61x10-5 eV/K, q = 1,6 x10-19 C, Eg = 1,1 eV, ED = EA = 0,1 eV, n =1300 cm2/Vs, p
=500 cm2/Vs, s nguyn t Si/cm3 = 5 x 1022, T = 300 K.
Gn ng, xem = nqn vi bn dn loi n v = pqp vi bn dn loi p.
[*]
a) Khi x = 0, vt liu c in tr sut l 230.000 .cm. Xc nh s in t dn/cm3.
b) Khi x = 10-8 , dng [*] tnh ca (1) v (2).
c) Khi x = 10-8 , dng s liu cu a) tnh ca (1) v (2).
d) So snh gi tr thu c t b) v c). Cch no s chnh xc hn, ti sao?
p s: a) 1,5.1010/cm3; b) 1 = 0,104 -1.cm-1, 2 = 0,04 -1.cm-1; c) 1 = 2 = 160,09
-1.cm-1; d) cch c khng chnh xc v khng k n nng cht ph gia v gi s
0 khng i.
13) Khi NiO c ph gia Cr2O3 hnh thnh cht rn c cng thc Crx3+Ni12-+3xNi 3x+Vx O
Nu t l Cr3+/Ni2+ = 1/10, hy xc nh nng phn t dn trong 1 cm 3 v h s p
khi c ph gia. Bit rng khi khng c ph gia NiO = 10-10 -1.cm-1 300 K. Khi c
ph gia, dn in ch yu l p e (do ph gia acceptor) (p = p e), Eg(NiO) = 3,7 eV, EA =
0,1 eV, thng s mng aNiO = 4,176 A0, cu trc ca NiO ging NaCl v gi s 0
khng i.
p s: p = 8,44.1021/cm3 v p = 1,96.1016 cm2/Vs.
14) C 10 22 nguyn t Al/m3 trong Si to ra bn dn loi p. nhit no th
dn in ca Si nguyn cht bng vi dn in cc i ca bn dn c ph gia. Bit
20 0C th dn in ca Si nguyn cht l = 5 x 10 -4 -1m-1, Eg = 1,1 eV, p =
0,0425 m2/V.s , k = 8,61 x 10-5 eV/K.
p s: 640 K
15) a) Cho bn dn nguyn cht c dn 20 0C l = 2,17 -1cm-1, 150 0C l
= 16,5 -1cm-1. Xc nh Eg, bit k = 8,61 x 10-5 eV/K.
b) Khi T = const th thay i nh th no theo Eg , khi Eg = const th thay i th
no theo T (gi : xy dng th ln = f(Eg) hoc ln = f(1/T)).
p s: a) Eg = 0,33 eV
16) Nu mt ph gia nhm V c thm vo Ge vi t l 10 -8 to in tr sut =
0,1 .m. Bit MGe = 72,6 v dGe = 5,32 g/cm3. Tnh chuyn dch ca in t v
cng in trng E (V/m) to ra tc trung bnh ca in t l v = 1m/s.
p s: n = 1417.10-4 m2/V.s v E = 7 V/m
17) nhit cao c 1/1012 in t ha tr ca Si nm trong min dn. Tnh dn
in ca Si. Bit Si c cu trc kim cng v c cu hnh 1s 2 2s2 2p6 3s2 3p2 , hng s
mng a = 5,43 A0 , p = 500 cm2/V.s , n = 1300 cm2/V.s.

p s: 5,76.10-5 -1cm-1
18) Mt bn dn cha 10 21/m3 cht mang in tch m (v mt s rt nh cht mang
in tch dng) c in tr sut l = 0,016 .m. Tnh a) dn in ca bn dn.
b) chuyn dch ca in t . c) Tc trung bnh ca in t nu cng in
trng l 5 mV/mm. d) Nu cng in trng l 0,5 V/m th tc trung bnh ca
in t l bao nhiu.
p s: a) 62,5 -1cm-1; b) 0,391 m2/V.s; c) 1,95 m/s; d) 0,195 m/s

19) Mt bn dn nguyn cht c dn in l 390 -1m-1 5 oC v 1010 -1m-1 25

o
C. a) Tnh rng ca min cm Eg. b) Tnh dn in 15 oC.
p s: a) 0,68 eV; b) 638 -1m-1
20) Ge nguyn cht 300 K c in tr sut l 44,64 .cm
a) Xc nh nng in t dn.
b) Mun nng cao dn in ln 10 ln ngi ta thm ph gia donor. Xc nh t l
nguyn t ph gia/Ge. Bit rng trong trng hp ny nng p i khng i so vi
nguyn cht. Cho s nguyn t Ge = 4,4 x 10 22/cm3 , n = 3800 cm2/Vs, p = 1800
cm2/Vs, q = 1,6 x 10-19 C.
p s: a) 2,5.1013/cm3 b) 1/2,4.108
20) Bn dn Si c cha 0,1 ppb P ( phn t khi lng). a) Bn dn l loi p hay n, gii
thch. b) Tnh dn in ca bn dn ny. Bit khi lng ring ca Si l d = 2,33
g/cm3, phn t lng ca P l M = 30,97, n = 0,19 m2/Vs, p = 0,0425 m2/Vs.
p s: 0,14 -1m-1
21) chuyn dch ca in t trong Si l 0,19 m 2/Vs. a) Tnh cng in trng
(V/m) tc trung bnh ca in t l 0,7 m/s. b) Nu dn in do cc phn t
mang in tch m to ra l 20 -1m-1 th nng in t trong min dn l bao nhiu?
c) Tnh in tr sut tng cng ca Si nguyn cht nu chuyn dch ca l l 0,05
m2/Vs.
p s: a) 3,7 V/m; b) 6,58.1020/cm3; c) 0,0396 m
22) Ge c dn in l 60 -1m-1 khi c ph gia As. a) trng thi cn kit ca min
cho, xc nh t l nguyn t ph gia/nguyn t Ge. b) Nu s in t Ge/cm 3 trong
min dn l 2,5 x 10 13/cm3, tnh t l dn in ca bn dn khi c ph gia so vi
bn dn nguyn cht. Bit chuyn dch n = 3800 cm2/Vs, p = 1800 cm2/Vs, dGe =
5,32 g/cm3, MGe = 72,6.
p s: 2,24.10-8; b) 26,8
23) Si 300 K c nng in t dn l n i = 1,5 x 1010/cm3, chuyn dch n = 1300
cm2/Vs, p = 500 cm2/Vs, dSi = 2,33 g/cm3, MSi = 28,1. a) Xc nh in tr sut ca Si

300 K. b) Khi P c cho vo Si vi t l 10 -8 th in tr sut ca bn dn ny l bao

nhiu trng thi cn kit ca min cho.
p s: a) 231480 cm; b) 9,62 cm
24) 00C in tr sut 0 ca Ge l 50 cm, ca Cu l 16 nm. a) Khi tng nhit
th dn in ca Ge, Cu tng hay gim? Nu biu thc quan h gia dn in
v nhit ca Ge v Cu. b) 323 K dn in ca Ge v Cu l bao nhiu. Cho
Eg(Ge) = 0,72 eV v (Cu) = 0,004 0C -1, k = 8,61x 10-5 eV/K.
p s: 0,052.107 -1cm-1 (Cu) v 0,2120 -1cm-1 (Ge)
25) Ge 300 K c nng in t dn l n i = 2,5 x 10 13/cm3, chuyn dch n =
3800 cm2/Vs, p = 1800 cm2/Vs, dGe = 5,32 g/cm3, MGe = 72,6. a) Xc nh in tr
sut ca Ge 300 K. b) Khi Ga c cho vo Ge vi t l 10 -5 th in tr sut ca bn
dn ny l bao nhiu trng thi cn kit
p s: a) 44,64 .cm; b) 7,89.10-3 .cm
26) Mt bn dn nguyn cht c rng ca min cm E g l 0,5 eV. Tm nhit m
ti dn in tng 104 ln so vi dn in 25 oC, bit k = 8,61 x 105 eV/K.
p s: 5172 oC
27) Mt bn dn loi p c rng EA l 0,1 eV. Tm nhit m ti dn in
tng 10 ln so vi dn in 25 oC, bit k = 8,61 x 105 eV/K.
p s: 728 K
28) Nguyn t Bo c cho vo Si to bn dn loi p c dn in = 1 -1.m-1.
a) Hi c bao nhiu c s Si cha mt nguyn t Bo. b) Tnh phn trm khi lng
ca Bo. Bit Si c cu trc ging kim cng vi hng s mng a = 0,543 nm v d(Si)
= 2,33 g/cm3, M(Si) = 28,1, M(B) = 10,81, P = 0,0425 m2/Vs.
p s: a) 4,3.107 ; b) 1,13.10-7 % kl B = 1,13 ppb B