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Data Sheet No.

PD60161-P

IR2108(4) (S)
HALF-BRIDGE DRIVER

Features

Floating channel designed for bootstrap operation

Packages

Fully operational to +600V


14-Lead SOIC
Tolerant to negative transient voltage
8-Lead SOIC
IR21084S
IR2108S
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
14-Lead PDIP
3.3V, 5V and 15V input logic compatible
IR21084
Cross-conduction prevention logic
8-Lead PDIP
Matched propagation delay for both channels
IR2108
High side output in phase with HIN input
Low side output out of phase with LIN input
Logic and power ground +/- 5V offset.
2106/2301//2108//2109/2302/2304 Feature Comparison
Internal 540ns dead-time, and
programmable up to 5us with one
CrossInput
conduction
external RDT resistor (IR21084)
Part
Dead-Time
Ground Pins
logic
prevention
Lower di/dt gate driver for better
logic
noise immunity
2106/2301
COM
21064
2108
21084
2109/2302
21094

Description

HIN/LIN

no

HIN/LIN

yes

none

VSS/COM
COM
VSS/COM
COM
VSS/COM

Internal 540ns

Programmable 0.54~5 s
The IR2108(4)(S) are high voltage, high speed
Internal 540ns
IN/SD
yes
power MOSFET and IGBT drivers with depenProgrammable 0.54~5 s
dent high and low side referenced output
yes
Internal 100ns
HIN/LIN
COM
2304
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS
or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration which operates up to 600 volts.

Typical Connection
up to 600V
VCC

VCC

VB

HIN

HIN

HO

LIN

LIN

VS

COM

LO

TO
LOAD

up to 600V

HO

IR2108

(Refer to Lead Assignments for correct pin


configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.

VCC

V CC

VB

HIN

HIN

VS

LIN

LIN

IR21084

TO
LOAD

DT
V SS

RDT

V SS

COM
LO

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This datasheet has been downloaded from http://www.digchip.com at this page

IR2108(4) (S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol

Definition

VB

High side floating absolute voltage

VS

Min.

Max.

-0.3

625

Units

High side floating supply offset voltage

VB - 25

VB + 0.3

VHO

High side floating output voltage

VS - 0.3

VB + 0.3

VCC

Low side and logic fixed supply voltage

-0.3

25

VLO

Low side output voltage

-0.3

VCC + 0.3

DT

Programmable dead-time pin voltage (IR21084 only)

VSS - 0.3

VCC + 0.3

VIN

Logic input voltage (HIN & LIN )

VSS - 0.3

VCC + 0.3

Logic ground (IR21084 only)

VCC - 25

VCC + 0.3

VSS
dVS/dt
PD

RthJA

Allowable offset supply voltage transient


Package power dissipation @ TA +25C

Thermal resistance, junction to ambient

50

(8 lead PDIP)

1.0

(8 lead SOIC)

0.625

(14 lead PDIP)

1.6

(14 lead SOIC)

1.0

(8 lead PDIP)

125

(8 lead SOIC)

200

(14 lead PDIP)

75

(14 lead SOIC)

120

TJ

Junction temperature

150

TS

Storage temperature

-50

150

TL

Lead temperature (soldering, 10 seconds)

300

V/ns

C/W

Recommended Operating Conditions


The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.

Symbol

Min.

Max.

VB

High side floating supply absolute voltage

Definition

VS + 10

VS + 20

VS

High side floating supply offset voltage

Note 1

600
VB

VHO

High side floating output voltage

VS

VCC

Low side and logic fixed supply voltage

10

20

VLO

Low side output voltage

VCC

VIN

Logic input voltage

COM

VCC

DT

Programmable dead-time pin voltage (IR21084 only)

VSS

IR2108
IR21084

TA

VSS

VCC

VSS

VCC

Logic ground (IR21084 only)

-5

Ambient temperature

-40

125

Units

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).

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IR2108(4) (S)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25C, DT = VSS unless otherwise specified.

Symbol

Definition

Min.

Typ.

Max. Units Test Conditions

ton
toff

Turn-on propagation delay

220

300

Turn-off propagation delay

200

280

MT

Delay matching | ton - toff

30

tr

Turn-on rise time

150

220

tf

Turn-off fall time

50

80

Deadtime: LO turn-off to HO turn-on(DTLO-HO) &


HO turn-off to LO turn-on (DTHO-LO)

400
4

540
5

680
6

Deadtime matching = | DTLO-HO - DTHO-LO |

60

600

DT
MDT

VS = 0V
VS = 0V or 600V
nsec

VS = 0V
VS = 0V

usec
nsec

RDT= 0
RDT = 200k (IR21084)
RDT=0
RDT = 200k (IR21084)

Static Electrical Characteristics


VBIAS (VCC, VBS ) = 15V, VSS = COM, DT= V SS and TA = 25C unless otherwise specified. The VIL, VIH and IIN
parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol

Definition

Min. Typ. Max. Units Test Conditions

VIH

Logic 1 input voltage for HIN & logic 0 for LIN

2.9

VCC = 10V to 20V

VIL

Logic 0 input voltage for HIN & logic 1 for LIN

0.8

VCC = 10V to 20V

VOH

High level output voltage, VBIAS - VO

0.8

1.4

VOL

Low level output voltage, VO

0.3

0.6

ILK

Offset supply leakage current

50

IQBS

Quiescent VBS supply current

20

75

130

IQCC

Quiescent VCC supply current

0.4

1.0

1.6

IIN+

Logic 1 input bias current

20

IIN-

Logic 0 input bias current

VCCUV+

VCC and VBS supply undervoltage positive going

8.0

8.9

9.8

VBSUV+

threshold

VCCUV-

VCC and VBS supply undervoltage negative going

7.4

8.2

9.0

VBSUV-

threshold

VCCUVH

Hysteresis

0.3

0.7

IO+

Output high short circuit pulsed current

120

200

IO-

Output low short circuit pulsed current

250

350

IO = 20 mA
IO = 20 mA
VB = VS = 600V

A
mA

VIN = 0V or 5V
VIN = 0V or 5V
RDT=0
HIN = 5V, LIN = 0V

HIN = 0V, LIN = 5V

VBSUVH

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mA

VO = 0V,
PW 10 s
VO = 15V,
PW 10 s

IR2108(4) (S)
Functional Block Diagram

VB
UV
DETECT

2108

HO

R
HV
LEVEL
SHIFTER
VSS/COM
LEVEL
SHIFT

HIN

DT

PULSE
FILTER

VS

PULSE
GENERATOR

VCC

DEADTIME &
SHOOT-THROUGH
PREVENTION
UV
DETECT

+5V

VSS/COM
LEVEL
SHIFT

LIN

LO

DELAY

COM

VSS

VB

21084

UV
DETECT

HO

VSS/COM
LEVEL
SHIFT

HIN

HV
LEVEL
SHIFTER

VS

PULSE
GENERATOR

VCC

DEADTIME &
SHOOT-THROUGH
PREVENTION

DT

UV
DETECT

+5V

LIN

PULSE
FILTER

VSS/COM
LEVEL
SHIFT

DELAY

LO

COM

VSS

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IR2108(4) (S)
Lead Definitions
Symbol Description
HIN

Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2108 and
VSS for IR21084)

LIN

Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2108

DT

Programmable dead-time lead, referenced to VSS. (IR21084 only)

VSS

Logic Ground (21084 only)

VB

High side floating supply

HO

High side gate driver output

VS

High side floating supply return

and VSS for IR21084)

VCC

Low side and logic fixed supply

LO

Low side gate driver output

COM

Low side return

Lead Assignments
VCC

VB

VCC

VB

HIN

HO

HIN

HO

LIN

VS

LIN

VS

COM

LO

COM

LO

1
2

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3
4

8 Lead PDIP

8 Lead SOIC

IR2108

IR2108S

VCC

HIN

VB

14

14

VCC

13

HIN

VB

13
12
11

LIN

HO

12

LIN

HO

DT

VS

11

DT

VS

VSS

10

VSS

10

COM

COM

LO

LO

14 Lead PDIP

14 Lead SOIC

IR21084

IR21084S
5

IR2108(4) (S)

HIN

LIN

LIN

HO

50%

50%

tr

toff

LO

ton
Figure 1. Input/Output Timing Diagram

90%

tf

90%

10%

LO

10%

50%

50%

HIN
ton

toff

tr
90%

HIN
LIN

50%

LO

90%

50%

HO

DTLO-HO

10%

10%

Figure 2. Switching Time Waveform Definitions

90%

HO

tf

10%
DT HO-LO

90%

10%
MDT=

DTLO-HO

- DT

HO-LO

Figure 3. Deadtime Waveform Definitions

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500

Turn-on Propagation Delay (ns)

Turn-on Propagation Delay (ns)

IR2108(4) (S)

400
300
M ax.

200
Typ.

100
0
-50

-25

25

50

75

500
400
M ax.

300
Typ.

200
100
0

100 125

10

Temperature ( C)

Turn-off Propagation Delay (ns)

Turn-off Propagation Delay (ns)

500
400
300
M ax.

200
Typ.

100

-25

25

50

75

100 125

Temperature (oC)
Figure 5A. Turn-off Propagation Delay
vs.Temperature

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14

16

18

20

Figure 4B. Turn-on Propagation Delay


vs. Supply Voltage

Figure 4A. Turn-on Propagation Delay


vs. Tem perature

0
-50

12

V BIAS Supply Voltage (V)

500
400
M ax.

300
Typ.

200
100
0
10

12

14

16

18

20

V BIAS Supply Voltage (V)


Figure 5B. Turn-off Propagation Delay
vs. Supply Voltage

IR2108(4) (S)

500
Turn-on Rise Time (ns)

Turn-on Rise Time (ns)

500
400
300
M ax.

200
100

Typ.

400
300

M ax.

200
Typ.

100
0

0
-50

-25

25

50

75

10

100 125

12

Temperature (oC)

18

20

Figure 6B. Turn-on Rise Tim e


vs. Supply Voltage

200
Turn-off Fall Time (ns)

200
Turn-off Fall Time (ns)

16

V BIAS Supply Voltage (V)

Figure 6A.Turn-on Rise Tim e


vs. Tem perature

150
100
M ax.

50
Typ.

0
-50

150
100
50

M ax.

Typ.

0
-25

25

50

75

100 125

Temperature ( C)

Figure 7A. Turn-off Fall Tim e


vs. Temperature

14

10

12

14

16

18

20

V BIAS Supply Voltage (V)


Figure 7B. Turn-off Fall Tim e
vs. Supply Voltage

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1000

1000

800

800

Deadtime (ns)

Deadtime (ns)

IR2108(4) (S)

M ax.

600
Typ.

400

M in.

200
-50 -25

M ax.
Typ.

600

M in.

400
200

25

50

75

10

100 125

14

16

18

20

V BIAS Supply Voltage (V)

Temperature (oC)

Figure 8B. Deadtim e vs. Supply Voltage

Figure 8A. Deadtim e vs. Temperature

8
7

6
5

Input Voltage (V)

M ax.

Deadtime ( s)

12

Typ.

M in.

3
2
1

6
5
4
M ax.

3
2
1

0
0

50

100

150

RDT (K)
Figure 8C. Deadtime vs. RDT
(IR21084 Only)

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200

0
-50

-25

25

50

75

100 125

Temperature (oC)
Figure 9A. Logic "1" Input Voltage
vs. Tem perature

IR2108(4) (S)

4.0
Input Voltage (V)

Input Voltage (V)

7
6
5
4
M ax.

3
2
1
0
10

12

14

16

18

3.2
2.4
1.6
M in.

0.8
0.0
-50

20

-25

V CC Supply Voltage (V)

High Level Output Voltage (V)

Input Voltage (V)

3.2
2.4
1.6
M in.

0.8
0.0
14

16

18

V CC Supply Voltage (V)


Figure 10B. Logic "0" Input Voltage
vs. Supply Voltage

10

75

100 125

Figure 10A. Logic "0" Input Voltage


vs. Tem perature

4.0

12

50

Temperature (oC)

Figure 9B. Logic "1" Input Voltage


vs. Supply Voltage

10

25

20

4
3
2
1

M ax.

Typ.

0
-50

-25

25

50

75

100

125

Temperature ( C)
Figure 11A. High Level Output
vs. Temperature

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Low Level Output Voltage (V)

High Level Output Voltage (V)

IR2108(4) (S)

3
2

M ax.

1
Typ.

0
10

12

14

16

18

20

1.5
1.2
0.9
0.6

M ax.

0.3
Typ.

0
-50

-25

V CC Supply Voltage (V)

M ax.

0.6
Typ.

0.3
0
18

V CC Supply Voltage (V)


Figure 12B. Low Level Output
vs. Supply Voltage

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20

Offset Supply Leakage Current ( A)

Low Level Output Voltage (V)

0.9

16

75

100

125

Figure 12A. Low Level Output


vs. Tem perature

1.2

14

50

Temperature ( C)

1.5

12

25

Figure 11B. High Level Output


vs. Supply Voltage

10

500
400
300
200
100
M ax.

0
-50

-25

25

50

75

100 125

Temperature ( C)
Figure 13A. Offset Supply Leakage Current
vs. Tem perature

11

400

500
V BS Supply Current ( A)

Offset Supply Leakage Current ( A)

IR2108(4) (S)

400
300
200
100
M ax.

300

200
M ax.

100
Typ.
M in.

0
0

100

200

300

400

500

0
-50

600

-25

V B Boost Voltage (V)


Figure 13B. Offset Supply Leakage Current
vs. Tem perature

100 125

Figure 14A. V BS Supply Current


vs. Tem perature

3.0
Vcc Supply Current (mA)

400
V BS Supply Current ( A)

0
25
50
75
Temperature (oC)

300

200
M ax.

100

Typ.

2.5
2.0
M ax.

1.5
Typ.

1.0
0.5

M in.

M in.

0
10

12

14

16

18

V BS Supply Voltage (V)


Figure 14B. V BS Supply Current
vs. Supply Voltage

12

20

0.0
-50

-25

25

50

75

100 125

(o

Temperature C)

Figure 15A. V CC Supply Current


vs. Tem perature

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IR2108(4) (S)

60
Logic "1" Input Current ( A)

V CC Supply Current (mA)

3.0
2.5
2.0
1.5
M ax.

1.0
Typ.

0.5

M in.

0.0
10

12

14
16
18
V CC Supply Voltage (V)

50
40
30
20
M ax.

10

Typ.

0
-50

20

25

50

75

100

125

Temperature (oC)

Figure 15B. V CC Supply Current


vs. Supply Voltage

Figure 16A. Logic "1" Input Current


vs. Tem perature

5
Logic "0" Input Current ( A)

60
Logic "1" Input Current ( A)

-25

50
40
30
M ax.

20
10

Typ.

0
10

12

14

16

18

V CC Supply Voltage (V)


Figure 16B. Logic "1" Input Current
vs. Supply Voltage

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20

4
3
M ax.

2
1
0
-50

-25

25

50

75

100

125

Temperature ( oC)
Figure 17A. Logic "0" Input Current
vs . Te m pe rature

13

IR2108(4) (S)

12
V CC UVLO Threshold (+) (V)

Logic "0" Input Current ( A)

5
4
3
M ax.

2
1

12

14

16

18

10

M ax.
Typ.

M in.

8
7
-50

0
10

11

20

-25

75

100

125

Figure 18. V CC Undervoltage Threshold (+)


vs. Tem perature

Figure 17B. Logic "0" Input Current


vs. Supply Voltage

12
V BS UVLO Threshold (+) (V)

11
VCC UVLO Threshold (-) (V)

50

Temperature (oC)

V CC Supply Voltage (V)

10
M ax.

9
Typ.

8
M in.

7
6
-50

-25

25

50

75

100

125

Temperature (oC)

Figure 19. V CC Undervoltage Threshold (-)


vs. Tem perature

14

25

11
10

M ax.

Typ.

M in.

7
-50

-25

25

50

75

100

125

(o

Temperature C)
Figure 20. V BS Undervoltage Threshold (+)
vs. Tem perature

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IR2108(4) (S)

500
Output Source Current ( A)

V BS UVLO Threshold (-) (V)

11
10
9

M ax.
Typ.

8
M in.

7
6
-50

-25

25

50

75

400
300
Typ.

200
M in.

100
0
-50

100 125

-25

Temperature (oC)

50

75

100

125

(o

Temperature C)
Figure 22A. Output Source Current
vs. Tem perature

Figure 21. V BS Undervoltage Threshold (-)


vs. Tem perature

600
Output Sink Current (mA)

500
Output Source Current ( A)

25

400
300
200
Typ.

100

500
Typ.

400
300

M in.

200
100

M in.

0
10

12

14

16

18

V BIAS Supply Voltage (V)


Figure 22B. Output Source Current
vs. Supply Voltage

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20

0
-50

-25

25

50

75

100

125

Temperature ( oC)
Figure 23A. Output Sink Current
vs. Tem perature

15

IR2108(4) (S)

0
V S Offset Supply Voltage (V)

Output Sink Current ( A)

600
500
400
300
Typ.

200
M in.

100

Typ.

-4
-6
-8
-10

0
10

12

14

16

18

V BIAS Supply Voltage (V)


Figure 23B. Output Sink Current
vs. Supply Voltage

16

-2

20

10

12

14

16

18

20

V BS Flouting Supply Voltage (V)


Figure 24. Maxim um V s Negative Offset
vs. Supply Voltage

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IR2108(4) (S)
Case outlines

01-6014
01-3003 01 (MS-001AB)

8-Lead PDIP

DIM

B
5

FOOTPRINT

5
H

E
1

6X

0.25 [.010]

6.46 [.255]

3X 1.27 [.050]

e1

0.25 [.010]

A1

.0688

1.35

1.75

A1 .0040

.0098

0.10

0.25

.013

.020

0.33

0.51

.0075

.0098

0.19

0.25

.189

.1968

4.80

5.00

.1574

3.80

4.00

.1497

.050 BASIC

e1

MAX

1.27 BASIC

.025 BASIC

0.635 BASIC

.2284

.2440

5.80

6.20

.0099

.0196

0.25

0.50

.016

.050

0.40

1.27

y
0.10 [.004]

8X L

8X c

C A B

NOTES:
1. DIMENSIONING & TOLERANC ING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INC HES].
4. OUTLINE C ONFORMS TO JEDEC OUTLINE MS-012AA.

8-Lead SOIC
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MIN

.0532

K x 45

A
C

8X b

8X 1.78 [.070]

MILLIMETERS

MAX

8X 0.72 [.028]

INCHES
MIN

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.


MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.

01-6027
01-0021 11 (MS-012AA)

17

IR2108(4) (S)

14-Lead PDIP

14-Lead SOIC (narrow body)

01-6010
01-3002 03 (MS-001AC)

01-6019
01-3063 00 (MS-012AB)

IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/6/2003

18

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