Irfp460A, Sihfp460A: Vishay Siliconix

www.agelectronica.
com
www.agelectronica.com
IRFP460A, SiHFP460A
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
Low Gate Charge Qg Results in Simple Drive

Requirement
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully
Characterized
Capacitance
and
Avalanche Voltage and Current
Effective Coss Specified
Lead (Pb)-free Available
500
RDS(on) ()
VGS = 10 V
0.27
Qg (Max.) (nC)
105
Qgs (nC)
26
Qgd (nC)
42
Configuration
Single
D
Available
RoHS*
COMPLIANT
APPLICATIONS
TO-247
Switch Mode Power Supply (SMPS)

Uninterruptable Power Supply
High Speed Power Switching
TYPICAL SMPS TOPOLOGIES

S
D
Full Bridge
PFC Boost
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247
IRP460APbF
SiHFP460A-E3
IRP460A
SiHFP460A
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
30
Continuous Drain Current

Pulsed Drain
VGS at 10 V
TC = 25 C
TC = 100 C
Currenta
ID
IDM
Linear Derating Factor
UNIT
V
20
13
80
2.2
W/C
mJ
Single Pulse Avalanche Energyb
EAS
960
Repetitive Avalanche Currenta
IAR
20
Repetitive Avalanche Energya
EAR
28
mJ
Maximum Power Dissipation
TC = 25 C
Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
PD
280
dV/dt
3.8
V/ns
TJ, Tstg
- 55 to + 150
300d
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 C, L = 4.3 mH, RG = 25 , IAS = 20 A (see fig. 12).
c. ISD 20 A, dI/dt 125 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
IRFP460A, SiHFP460A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
Maximum Junction-to-Case (Drain)
RthJC
0.45
UNIT
C/W
SPECIFICATIONS TJ = 25 C, unless otherwise noted

PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 A
500
VDS/TJ
Reference to 25 C, ID = 1 mA
0.61
V/C
VGS(th)
VDS = VGS, ID = 250 A
2.0
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = 30 V
100
VDS = 500 V, VGS = 0 V
25
VDS = 400 V, VGS = 0 V, TJ = 125 C
250
0.27
11
ID = 12 Ab
VGS = 10 V
VDS = 50 V, ID = 12
Ab
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance

Total Gate Charge
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
Coss eff.
3100
480
18
VDS = 1.0 V, f = 1.0 MHz
4430
VDS = 400 V, f = 1.0 MHz
130
VDS = 0 V to 400
Vc
Qg
ID = 20 A, VDS = 400 V,
see fig. 6 and 13b
105
Qgs
26
Gate-Drain Charge
Qgd
42
Turn-On Delay Time
td(on)
18
tr
55
45
39
20
80
Turn-Off Delay Time

Fall Time
td(off)
VDD = 250 V, ID = 20 A,
RG = 4.3 , RD = 13 , see fig. 10b
tf
pF
140
-
Gate-Source Charge
Rise Time
VGS = 10 V
nC
ns
Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
A
G
TJ = 25 C, IS = 20A, VGS = 0 Vb
TJ = 25 C, IF = 20 A, dI/dt = 100 A/sb
1.8
480
710
ns
5.0
7.5
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
IRFP460A, SiHFP460A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
102
VGS
Top
10
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
20 s Pulse Width
TC = 25 C
0.1
0.1
VDS, Drain-to-Source Voltage (V)
91234_01
150 C
10
25 C
4.0
10
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
4.5 V
20 s Pulse Width
TC = 150 C
1
10
1
91234_02
Fig. 2 - Typical Output Characteristics
3.0
2.5
7.0
8.0
9.0
ID = 20 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20
102
6.0
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance

(Normalized)
ID, Drain-to-Source Current (A)
VGS
Top
5.0
VGS, Gate-to-Source Voltage (V)
91234_03
Fig. 1 - Typical Output Characteristics
102
20 s Pulse Width
VDS = 50 V
0.1
102
10
102
91234_04
20 40 60 80 100 120 140 160
TJ, Junction Temperature (C)
Fig. 4 - Normalized On-Resistance vs. Temperature
IRFP460A, SiHFP460A
Vishay Siliconix
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
104
Ciss
103
102
Coss
10
Crss
102
ISD, Reverse Drain Current (A)
105
102
10
103
91234_05
0.2
103
ID, Drain Current (A)
12
VDS = 100 V
4
For test circuit
see figure 13
0
0
20
40
60
80
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1.0
1.2
1.4
1.6
102
10 s
100 s
10
1 ms
TC = 25 C
TJ = 150 C
Single Pulse
10
100
QG, Total Gate Charge (nC)
0.8
Operation in this area limited

by RDS(on)
VDS = 400 V
VDS = 250 V
0.6
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = 20 A
16
0.4
VSD, Source-to-Drain Voltage (V)
91234_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
VGS, Gate-to-Source Voltage (V)
VGS = 0 V
0.1
1
91234_06
25 C
20
150 C
10
91234_08
10 ms
102
103
104

Fig. 8 - Maximum Safe Operating Area
IRFP460A, SiHFP460A
Vishay Siliconix
RD
VDS
VGS
ID, Drain Current (A)
20
D.U.T.
RG
+
- VDD
10 V
15
Pulse width 1 s
Duty factor 0.1 %
10
Fig. 10a - Switching Time Test Circuit

VDS
90 %
0
25
50
75
100
125
150
10 %
VGS
TC, Case Temperature (C)
91234_09
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
0 0.5
0.1
0.2
0.1
0.05
PDM
0.02
0.01
10-2
t1
Single Pulse
(Thermal Response)
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (S)
91234_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
D.U.T.
RG
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
IRFP460A, SiHFP460A
2400
ID
Top
8.9 A
13 A
Bottom 20 A
2000
1600
1200
800
400
0
620
VDSav, Avalanche Voltage (V)
EAS, Single Pulse Avalanche Energy (mJ)
Vishay Siliconix
600
580
560
540
25
50
75
100
125
Starting TJ, Junction Temperature (C)
91234_12c
150
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
16
12
20
IAV, Avalanche Current (A)
91234_12d
Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current
Current regulator
Same type as D.U.T.
50 k
QG
10 V
12 V
0.2 F
0.3 F
QGS
QGD
D.U.T.
VG
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
IRFP460A, SiHFP460A
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit

+
D.U.T.
Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer
+
-
RG
dV/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
Driver gate drive

P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS = 10 V*
D.U.T. ISD waveform

Reverse
recovery
current
Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop

Inductor current
Ripple 5 %
ISD
* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91234.

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www.agelectronica.

Low Gate Charge Qg Results in Simple Drive

Switch Mode Power Supply (SMPS)

TYPICAL SMPS TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted

Continuous Drain Current

Linear Derating Factor

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

Case-to-Sink, Flat, Greased Surface

Maximum Junction-to-Case (Drain)

SPECIFICATIONS TJ = 25 C, unless otherwise noted

VDS = VGS, ID = 250 A

VDS = 500 V, VGS = 0 V

VDS = 400 V, VGS = 0 V, TJ = 125 C

Reverse Transfer Capacitance

Effective Output Capacitance

VDS = 1.0 V, f = 1.0 MHz

VDS = 400 V, f = 1.0 MHz

Turn-On Delay Time

Turn-Off Delay Time

Drain-Source Body Diode Characteristics

Pulsed Diode Forward Currenta

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

VDS, Drain-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

ID, Drain-to-Source Current (A)

VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

20 40 60 80 100 120 140 160

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

ISD, Reverse Drain Current (A)

VDS, Drain-to-Source Voltage (V)

ID, Drain Current (A)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

QG, Total Gate Charge (nC)

Operation in this area limited

Fig. 7 - Typical Source-Drain Diode Forward Voltage

VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

ID, Drain Current (A)

Fig. 10a - Switching Time Test Circuit

TC, Case Temperature (C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

t1, Rectangular Pulse Duration (S)