250 Bai Tap Ky Thuat Dien Tu 5936

NGUYN THANH TR - THI VNH HIN
250 BI TP
KV THUT IN T
NH XUT BN GIO DC VIT NAM
Chng 1
IT
1.1. TM TT PHN L THUYT
Hiu ng chnh lu ca it bn dn l tnh dn in khng i xng.
Khi it c phn cc thun, in tr tip gip thng rt b. Khi it c
phn cc ngc in tr tip gip thcmg rt ln. Khi in p ngc t vo
ln it b nh thng v mt i tnh chnh lu ca n. Trn thc t tn
ti hai phofng thc nh thng i vi it bn dn. Phcng thc th nht
gi l nh thng tm thi (zener). Phng thc th hai gi l nh thng v
nhit hay nh thng thc l. Ngi ta s dng phng thc nh thng tm
thi lm it n p.
Phng trnh c bn xc nh dng in Id chy qua it c vit nh sau:
~^DS
y:
enu..
( 1- 1)
= , l th nhit;
- k = 1,38.10"^^ , hng s Boltzman;

K
- q = 1,6.10 'c , in tch ca electron;
- n = 1 i vi Ge v n = 2 i vi Si;
- T nhit mi trng tnh theo K.
T phng trnh (1-1) ngi ta xy dng c c tuyn Volt-Ampe
= f(Uj3) cho it v dng n inh ton cc thng s c lin quan i vi
cc mch in dng it.
hg dng quan trng ca it l:
a)
Chnh lu dng in xoay chiu thnh mt chiu nh cc s c bn
s dng cc loi it khc nhau (it c iu khin v it khng iu khin).
b) Hn ch bin in p mt gi tr ngng cho trc.

c) n nh gi tr in p mt chiu mt ngng xc lp Uz nh nh
thng tm thi (zener).
M hnh gn ng m t it trong cc mch in c xem nh:
a) L mt ngun in p l tng c ni tr bng khng khi it
chuyn t trng thi kho sang m ti mc in p U^K = Up.
b) L mt ngun dng l tng c ni tr rt ln khi it chuyn t
trng thi m sang kho ti mc in p
= oV
c) ch xoay chiu khi tn s tn hiu cn thp, it s tcmg ng
nh mt in tr xoay chiu c xc nh theo biu thc (1-2) di y :
( 1-2 )
Cn khi' tn s tn hiu cao, cn ch ti gi tr in dung k sinh

ca it Cd, n c mc song song vi in tr xoay chiu r^.
1.2. BJ TP C LI GII
Bi tp 1-1. Xc nh gi tr th nhit (U-r) ca it bn dn trong iu
kin nhit mi trng 20c.
Bi gii
T biu thc c bn dng xc nh th nhit
u ,= i
q
Trong :
- k = 1,38.10'^^ , hng s Boltzman;
K
- q = 1 , 6 . in tch ca electron;
- T nhit mi trng tnh theo K.
Tiay cc i lng tcng ng vo biu thc ta c:
U, = ^ = ^ M . 2 5 . 2 7 , n V
^ q
1,6.10"'
Bi tp 1-2. Xc nh in tr mt chiu Rj3 ca it chnh lu vi c

tuyn V-A cho trn hnh 1-1 ti cc gi tr dng in v in p sau:
= 2mA
Uo = -10V.
Bi gii
a)
Trn c tuyn V-A ca it cho
ti I = 2mA ta c:
Ud = 0,5V nn:
u..
0,5
= 250Q
K = =
-3
Id
2.10
b) Tng t ti U q = -lOV
Ta c Id = l|iA nn;
10
Hinh 1-1
= 10MQ.
tp 1-3. Xc nh in tr xoay chiu

tuyn V-A cho trn hnh 1-2.
ca it chnh lu vi c
a) Vi Id = 2mA
b) Vi Id = 25mA.
Bi gii
a)
Vi Ij) = 2mA, k tip tuyn ti im ct vi c tuyn V-A trn hnh
1-2 'a s c cc gi tr Ij3 v Up tng ng xc nh AU v AIp nh sau:
= 4niA; U^ = 0,76V
Ip = OrnA; p = 0,65V
AIp = 4m A - OmA = 4m A
In(mA)
AI.
30
25
20
A U d = 0 ,7 6 V - 0 ,6 5 V = 0 ,1 1 V
10
Vy:
AI, u (v;
---
"
AI
4.10-
0,2
0,4 0,60,7 0,8

Hinh 1-2
1,0
b)
Vi Id = 25mA. Cc bc tng t nh cu a) ta xc nh c cc
i lng tng ng di y:
Id = 30mA; D = 0,8V
Id = 20mA; U d = 0,78V
AIjj = 30 - 20 = lOmA
Ad = 0,8 - 0,78 = 0,02V
V y , = ^ =^
=2 .
AI 10.10''
4 ) Bi tp 1-4. Cho c tuyn V-A ca mt it nh trn hnh 1-2. Xc

nh in tr mt chiu ti hai gi tr dng in.
a) Ij5 = 2mA.
b) Iq = 25mA v so snh chng vi gi tr in tr xoay chiu trong bi
tp 1-3.
Bi gii
T c tuyn V-A trn hnh 1-2 ta c cc gi tr toig ng sau;
a) Id = 2mA; D = 0,7V
Nn:
so vi
R .= ^ = - ^ = 3 5 0 Q
AL 2.10
= 27,5Q.
b) Id = 25mA; D = 0,79V
Nn:
so vi
R ,= ^ = - ^ ^ = 3 1 ,6 2 Q
'* AL 25.10"'
= 2 Q.
Bi tp 1-5. Cho mch in dng i nh hnh l-3a v c tuyn V-A

ca it nh trn hnh l-3b.
a) Xc nh to im cng tc tnh Q[)o; liX)]b) Xc nh gi in p trn ti Ur.
Bi gii
a) Theo nh lut Kirchoff v in p vng ta c:
uD
R.
u.
IkQ
a)
Hnh 1-3
E - u - u, = 0 hay E = Uo + ,
y chnh l phcrtig trnh na ti mi chiu cci mch din dng i trn.
Dng ng ti mt chiu thng qua hai im cl trn trc lung vi
U|) = o v v trn trc honh vi Ip = 0.
Ti p = 0 ta c E = 0 + IpR,
Nn:
E
D=R
lOV
10'o
Ti I|J = 0 la c l = U|J + (OA).R,

Up = E|
-lO V
i) <
ng ti rnt chiu
(R_) c dng nh trn hnh
1-4. ng ti mt chiu
(R_) ct c tuyn (V-A) ti
icm cng tc tnh Qflix>
U doI vi to tcmg ng:
I[)0 = 9,25m A
Upo = 0 ,7 8 V
b) in p ri trn ti R, s l:
= 10mA
u =I.R, =I,.R, =9,25.10-M 0 =9,25V

Hoc Ur, c th c tnh:
U r, = E - U do= 10-0,78 = 9,22V
S khc nhau trong hai kt qu trn do sai s khi xc nh theo thi
biu din c tuyn V-A i vi it trn hnh 1-3 v hnh 1-4.
Bi tp 1-6. Tnh ton lp li nh bi tp 1-5 vi R, = 2kQ.
Bi gii
a) T biu thc:
E
lOV
2kQ
R
U^ = E
= 5mA
= 10V
ng ti mt chiu
(R_) c dimg nh trn hnh
1-5 v ta c to im
Q[Ido; U doI tcmg ng:
Ido = 4,6mA
U do = 0,7V
b) in p ri trn ti R, s l:
=1^ .R, = I doJR, =4,6.10-' .2.10' =9,2V
hoc
= E - U do=10V -0,7V =9,3V
7 ] Bi tp 1-7. Tnh ton lp li cho bi tp 1-5 bng cch tuyn tnh ho

c tuyn Volt-Ampe cho trn hnh l-3b v it loi Si.
Bi gii
Vi vic tuyn tnh ho c tuyn V-A ca it trn ta v li c tuyn
nh trn hnh 1-6.
10
Dng ng ti mt
chiu (R_) cho mch
tng t nh trong cu a)
ca bi tp 1-5 v c
biu din trn hnh 1-6.
ng ti mt chiu c
tuyn V-A ti Q vi to
tong ng.
Ido = 9,25mA
U do = 0,7V.
Hnh 1-6
( 8 j Bi tp 1-8. Tnh ton lp li cho bi tp 1-6 bng cch tuyn tnh ho

c tuyn V-A cho trn hnh l-3b v it loi Si.
Bi gii
Vi vic tuyn tnh
ho c tuyn V-A ca it
trn ta v li c tuyn
nh trn hnh 1-7.
Dng ng ti mt
chiu (R_) cho mch tng
t nh trong cu a) ca bi
tp 1-6 v c biu din
trn hnh 1-7.
ng ti mt chiu
(R_) ct c tuyn V-A ti
Q. Vi to tng ng:
Hnh 1-7
Ido ~ 4,6rnA
= 0,7V.
Bi tp 1-9. Tnh ton lp li cho bi tp 1-5 bng cch l tng ho
c tuyn V-A cho trn hnh l-3b v it loi Si.
Bi gii
Vi vic l tcmg ho c tuyn V-A ca it, ta c nhnh thun ca
c tuyn trng vi trc tung (Ip), cn nhnh ngc trng vi trc honh
(U d) nh trn hnh 1-8.
11
Dng dng li mt chicu

(R_) cho mch tng t nh
Irong cu a) ca bi lp 1-5.
ng ti mt chiu ct
c tuyn V-A ti im Q vi
to tcyng ng:
no = iOmA
U,K, = OV.
ng ti mt chiu (R_)
c biu din nh trn hnh 1-8.
Bi tp 1-10. Cho mch in dng it loi Si nh hnh i -9.
Xc nh cc gi tr in p v dng in U q. U|(, I|y
Bi gii
Bit rng it loi Si lm vic
bnh thng ngng thng nm trong
khong l 0.5V -r 1,25V. Chn ngng
m viq cho it:
U = 0,7V; E = 8V.
in p ri trn in ir ti R s l:
U, = E - Up = 8 -0 ,7 = 7,3V
Hnh 1-9
Dng in chy qua it I|) = 1,;, (dng

qua ti R) s :
Id = Iu = - ' = ^ = - ^ ^ = 3.32mA
"
'
2 ,2 .1 0 '
Bi tp 1-11. Cho mch in dng it nh hnh 1-10. Xc nh in

p ra trn ti v dng in Id qua cc it D, Dj.
Bi gii
Chn ngng in p thng cho hai it D| v D, lng ng.
=0,7V di viitSi
12
=0,3V i vi it Ge.
Ip Dj Si D, Ge
.
in p ra trn ti s l:
L
E
12V
= 12-0,7-0,3= liv.
+
u ra
5,6kQ
Dng in qua cc it D|,

v E s l:
r
11
5,6.10
Hnh 1-10
l,96m A .
(^1^ Bi tp 1-12. Cho mch in dng it nh hnh 1-11

Xc inh cc in p v dng in u, Up , Ij3.
Bi gii
D,Si D.Si
1 ki
12V
Id U o,=OV I=I,,=I,=0A =I,
T
D.
D2
12V
R u ra
u.rn
r:
5,6kf
R5,6kQ
Hnh 1-12
Hnh 1-11
Do D| c phn cc thun, cn Dt c phn cc nghch, ta v li s

tng ng ca mch vi gi thit c hai it u l tcmg nh trn hnh 1-12.
Khi ; u = Id.R = Ir.R = OA.R = o v
V it D, trng thi h mch nn in p ri trn n chnh l in p
ngun E:
U ,= E -I2 V
Nu theo nh lut Kirchoff ta cng s c kt qu nh trn.
E -U
D,
=0
u D-, = E -U D,,-U ^ra = I 2 -0 -0 = 1 2 V .
13
(^1^ Bi tp 1-13. Cho mch in dng it nh hnh 1-13

Xc nh cc dng in v in p I, U|, 2,
+u, -
D Si
,.
0 ^^
1VW^->
E,=10VR 4,7kQ
R,
L
R, 2,2kQ
R,
u.
E ,^ IO V
E , : 5V
E3=-5V
Hnh 1-14
Hnh 1-13
Qin in p ing cho it D loi Si 0,7V ta v li s trn nh hnh 1-14.

Dng in I c tnh:
,Ê .E -U
R,+R2
( 1 0 .5 - 0 ^ )
(4,7+2,2)10^
in p U|, 2 tng ng trn R|, R, s l:

u , =IR, =2,07.10'\4,7.10^ =9,73V
2 =IR2 =2,07.1012,2.10^ =4,55V
in p ra s l:
u = 2 - E, = 4,55 - 5 = -0,45V
Du tr (-) trong kt qu biu th rng cc tnh ca in p ra (U) s c
Bi gii
Chn gi tr in p thng cho cc it D ,
c v li nh hnh 1-16.
Dng in I c tnh
loi Si 0,7V. S 1-15
I = H ^ = ^ = i^ = 2 8 ,1 8 m A
R
14
0 ,3 3 .1 0 '
ra
Hnh 1-16
Hnh 1-15
Nu chn D v D, ging nhau ta c dng qua chng s nh nhau v

tnh c;
I =I
D,
Qg
D,
in p ra chnh l in p thng ri trn it D| v D,

U = 0 ,7 V
Bi tp 1-15. Cho mch in dng it nh hnh 1-17. Xc nh dng

in I chy qua mch.
Bi giai
Di tc ng ca hai ngun in p E| v E . D| c phn cc thun,
cn D c phn cc nghch, ta v i s tng ong nh hnh 1-18
di y:
Si
N 1
I R
D.
D,
E|=20V 2,2kQ ------ ------- i
Si
----- Â
E,=4V
+
R 2.2kn
E, -4 :^ 0 V
Hnh 1-17
-Ê2=4V
Hnh 1-18
Dng in I c tnh:
R
2,2.10'
15
Bi tp 1-16. Cho mch in dng it nh hnh 1-19. Xc nh in

p ra trn ti R.
E tl2V
4rO,3V
2,2kQ
u.ra
Hnh 1-20
Bi gii
V D| v D, khc loi (D, - Si; D-, - Ge) nn khi c cp in p phn
cc E it D-, (Ge) lun lun thng ngng 0,3V, cn it D| s lun lun
kho do ngng thng ti thiu ca it loi Si l 0,7V.
S tong ofng ca mch c v li nh trn hnh 1-20.
in p ra (U) trn ti R c tnh:
U,, = E - u = 1 2 - 0 , 3 = 11,7V.
17 ) Bi tp 1-17. Cho mch in dng it,nh trn hnh 1-21. Xc nh

dng in I I,,
.
Si
H >h
D.
Bi gii
Chn ngng in p thng cho
hai it D 2 loi Si bng 0,7V.
Dng in I| c tnh:
I,=
u D,
.
0,7
R.
3,3.10
E -i
20V
3-=0,212mA
Theo nh lut Kirchoff v in p

vng ta c:
- U ,+ E - U - U ,= 0
16
R| 3,3kQ
- aXat- i
I
d,
Si
h
4-AAAr
5,6kf
Hnh 1-21
Hay
Ur = E -U c^-U ^=20-0,7-0,7= 18,6V

,_ u
I=
R,
Do :
18,6
- ^ = 3 ,3 2 m A
5,6.10^
Theo nh lut Kirchoff v dng in nt ta c;

=1^- I ,=3,32-0,212 = 3,108mA
Bi tp 1-18. Cho mch in dng it nh hnh 1-22 (cng lgic OR
dng). Xc nh in p v dng in ra trn ti I, u.
Bi gii
V D , Dj u l it loi Si, nu chn ngng thng cho chng bng
0,7V th D s lun lun thng cn Dj lun lun b kho. Mch in c v
li nh hnh 1-23.
(1)
* -i
E.=10V
(0)
E, ov
DI
Si
D,
Si
+
E * :r io v
ra
D,
I '-
0.7V
u ra
- *ra
R ^ ik n
Hnh 1-23
Hnh 1-22
in p ra s l:
U = E - U d,= 1 0 -0 ,7 = 9 ,3 V
I = i2-= _ iL = 9 3mA.
R 1.10^
Bi tp 1-19. Cho mch in dng it nh hnh 1-24 (cng lgic
AND dng). Xc nh dng in ra (I) v in p ra (U^) n ti R.
Bi gii
Chn ngng thng bng 0,7V cho D| v D2, khi s 1-24 c v

li nh hnh 1-25, tng ng vi
thng, cn D, tt.
2- 250BTKTINT.A
17

0 ,7 V
u
Ira
uD2
- i r lO V
R ^ Ikn
"ÊlOV
Hnh 1-25
in p ra chnh l in p thng cho it D 2 v bng Up . Vy ta c:

=0,7V.
Dng in qua ti R cng chnh l dng qua D 2 v c tnh:
E -U ,
= l l^ = 9 ,3 m A .
R
1.10'
Bi tp 1-20. Cho mch chnh lu dng it nh hnh 1-26.
V dng in p ra n ti R v xc nh gi in p ra mt chiu
sau chnh lu Ujc vi it D l tng.
D
uV
Hnh 1-26
2 kQ
b)
Bi gii
Vi mch in cho trn hnh 1-26 it D s dn in (thng) trong na
chu k dng (+) ca tn hiu vo (t 4-T/2) cn trong na chu k m (-)
ca tn hiu vo (t T/2^T) it D s b kho hon ton. Dng ca in p ra
trn ti c biu din nh trn hnh l-27b, cn s tng ofng c
biu din nh hnh l-27a.
18
2- 250BTKTINT - B
+
u
R S 2kQ
Ude
a)
Hinh 1-27
Dien p ra mt chiu tren tai
b)
didc tnh:
Ud, = 0,318U, = 0,318.20V = 6,36V

1-21. Cho mach chinh lim dng di't nhuf trn hinh 1-28.
Ve dang din p ra trn tai R va tnh gi tri din p ra mt chiu
trn ti R vi di't D thirc
t' loai
Si
D
Uv
R
a)
2k Q
Hinh 1-28
Bi gii
Vi di't D thuc (khdng 1;^ tucmg)
ni trf ca di't khi phn cuc veri tiimg
nfa chu ky ca tn hiu vo s c gi
trj xc lp. Khi di't thng ni trd ca
D rt b con khi D kho s tuofng ng
rt ln. Vi vy dang din p ra diroc
biu din nhir trn hinh 1-29.
Din p ra mt chiu trn ti R
duoc tnh:
= -0,318(U, - U^)
Hinh 1-29
= -0,318(20-0,7) = -6,14V
19
Nh vy so vi trng hp D l tcmg trong bi 1-20 in p ra gim

0,22V tng ofng 3,5%.
( 2^ Bi tp 1-22. Tnh ton lp li bi 1-20 v 1-21 vi gi tr
v rt ra kt lun g?
= 200V
Bi gii
i vi it D l tng ta c:
u.,, = 0,318U^ = 0,318.200V = 63,6V
i vi it D thc (khng l tng) ta c:
U,, = 0,318(U,-Uo)
= 0,318 (200-0,7) = 63,38V
Kt lun: Khi in p vo c mc ln
= 200V).
i vi trng hp it thc, in p ra mt chiu gim 0,22V tng

ng 0,3459% t hn 10 ln so vi kt qu trong bi 1-21 khi
c mc
b ( u l = 20V ).
(^2^ Bi 1-23. Cho mch chnh lu hai na chu k dig it nh trn hnh 1-30
a) V dng sng sau chnh lu trn ti R,.
b) Tnh gi tr in p ra mt chiu trn ti Uj,,.
c) Tnh gi tr in p ngc t ln D v Dj.
Bi gii
a)
y l mch chnh lu hai na chu k dng it. d dng nhn
bit trng thi lm vic ca mch ta v li s tng ng khi cc it
20
thng, kho vi tng 1/2 chu k ca tn hiu vo. V d: vi 1/2 chu k

dng ca tn hiu vo (t O-^T/2) s tng ng c biu din trn
hnh 1-31.
+
b)
a)
+
R. . >
2,2k<: : > *'' < Rj2.2kO
U.,(V)
<
2.2k
5 __
i
t(s)
u..
T
7 t(s)
2
d)
c)
Hnh 1-31
e)
b) Gi ir in p mt chiu trn ti R( s l:
=0,63U, =0,636^:
= 0,636.5 = 3 ,18V
Dng in p ra sau chnh lu y c hai na chu k nh trn hnh 1-3 le).
c)
in p ngc l ln D|, D, ng bng in p ra cc i u,, trong
tng 1/2 chu k hay bng 1/2 tr cc i ca in p vo v bng 5V.
(^2^ Bi tp 1-24. Cho mch in dng it nh hnh 1-32 (mch hn bin ni tip)
V dng in p ra trn ti R:
21
Bi gi
t ,(V)
a)
Hnh 1-32
b)
Gi thit it D l tng, d dng nhn thy D lun lun thng vi 1/2

chu k dng (+) ca in p vo. Mch in tng ng lc ny c v
nh trn hnh 1-33.
in p ra s l:
= U y + 5V v
it D s thng cho n thi im Uy
5V
gim xung n -5V na chu k m. Sau
R
U
U
khong thi gian it D s trng thi
phn cc ngc, dng qua it v qua ti
R lun bng khng, nn in p ra cng s
bng khng (tng ng vi mc in p
Hinh 1-33
vo U y < -5V. Khi U y > -5V cng tcnig
ng trong khong na chu k m ca tn hiu vo, tc khi U v > -5V it D
thng tr li v qu trnh s lp li nh phn tch trn. .
Dng in p ra c biu din nh trn hnh 1-34:
' U JV)
25
^=20V +5V =25V
5 //
-5
71-------- J
2
Hnh 1-34
b)
^ 2^ Bi tp 1-25. Cho mch in dng it nh hnh 1-35. V dng in

p ra trn ti R.
22
Uv(V)
H ^
20
U =5V
u.
u
R u ra
t(s)
-10
Hinh 1-35
a)
b)
Bi gii
Gi thit it D l tng.' Trong khong thi gian t O--T/2 vi
Uv = 20V it D thng hon ton, s in tng ng c v li nh
trn hnh 1-36 v in p ra s l:
=OV
U,=25V
Hnh 1-36
Hnh 1-37
= Uv + u = 20 + 5 = 25V
Trong khong thi gian t T/2 T T vi
'U(V)
Uy = -lOV it D lun lun trng thi kho,

s in tcfng cmg c v li nh trn
25
hnh 1-37 v in p ra trn ti R lc s l:
T
r
U^, = Ir.R = O.R = o v

Dng in p ra trn ti R c biu din
nh trn hnh 1-38.
t(s)
0
2
Hnh 1-38
Bi tp 1-26. Cho mch in dng it

nh hnh 1-39 (mch hn bin song song).
V dng in p ra trn ti R,.
23
Bi gii
Vi gi thit it D l tng, n s thng khi in p vo Uy ^ 4V,
ngha l ton b 1/2 chu k m (-) ca in p vo v mt phn ca 1/2 chu
k {+) dng ca in p vo vi U v < 4 V. S in tng ng c v
li nh trn hnh 1-40 v ong khong thi gian in p ra lun lun
bng ngun u =
= 4V.
R
R
'
vw
ura
J-. t 4V
+
Hnh 1-40
v 4V
Hnh 1-41
Trong khong thi gian khi Uy > 4V,

it lun lun trng thi kho nn in
p ra trn ti s ln hn 4V v bng in
p vo. S in tng ng c v
li nh hnh 1-41.
Dng in p ra c biu din nh
n hnh 1-42 di y.
( 27^ Bi tp 1-27. Cho mch in dng
it nh hnh 1-43. V dng in p
ra khi dng it D loi silic vi
Ud = 0,7V.
Hnh 1-42
24
AAr
D i : Si
U.
Ura
U --4V
b)
Bi gii
Vi it thc, ngng thng cho trong u bi Uo = 0,7V mch in
c v li nh hnh 1-44.
TTieo nh lut Kirchoff v in p

vng ta c:
AA/V-
U 'o ,7 V
.
Uv + U d - U = 0
hay
u -iAv
U v = U - U o = 4 - 0 ,7 = 3 ,3 V
Vi U v > 3,3V it D lun lun trng

thi kho nn in p ra s ng bng in
Hnh 1-44
p vo (U v).
Vi in p vo Uv < 3 ,3 V it
trng thi thng hon ton nn in p
ra s !:
U,, = 4 - 0 ,7 = 3 ,3 V
Dng in p ra c biu din

nh hnh 1-45.
/2^)
tp 1-28. Cho mch in dng

it zener nh hnh 1-46 v c
tuyn V-A ca zener nh trn hnh 1-47.
Hnh 1-45
a)
Xc nh cc gi tr in p Ur,
u dng in Iz qua zener v cng sut
tiu tn trn zener Pz-
b) Lp li tnh ton trong cu a, khi thay R, = 3kQ

25
AA/VIkn
^=16V
U^=10V2
l, 2kQ^'
Pz,a.=30mA
Hnh 1-46
Bi gii
a)
thun tin cho vic
tnh ton cc thng s ca
mch ta v li s tong
ng nh hnh 1-48.
IkQ
^16V
^1
u""
l, 2kQ^'
T hnh 1-48 ta c:
u
U = U, = ^
R
' R+R,
Hnh 1-48
16V.1,2.10
- = 8,73V
1.10^+ 1,2.10
in p = u, t ln zener bng 8,73V lun lun nh hn
nn zener lun lun trng thi kho v I7 = OA.
in p st trn R s l:
Ur= Uv - u, = 16 - 8,73 = 7,27V

Cng sut tiu tn trn zener l:
p^ = U2.Iz = U z .0 = 0W
b) Vi R, = 3kQ.
in p u trn s hnh 1-48 s l:
U = - H ^ .R ,= 4 5 ^ = ,2 V
R+R, 1.10+3.10
26
lOV
V in p t ln zener u = 12V > 2 = lOV nn zener s c m

thng. S mch in c v li nh hnh 1-49.
in p trn ti R, chnh
bng in p \Jj v bng lOV
= U. = U,.
I--------------
--------------* -------------------
16-10 = 6 V
I, = ^ = = 3,33mA
' R. 3kQ
Hnh 1-49
I,
V
6V
IkQ
6 mA
. I, = 6 - 3,33 = 2,67mA
= Uz.Iz = 10V.2,67mA = 26,7mW
Thp hn tr cc i cho php
= 30mW.
Bi tp 1-29. Cho mch

n p dng zener nh
hnh 1-50.
a) Xc nh khong gi
tr in tr ti R, v dng in
qua ti R, sao cho in p ra
trn n lun lun n nh
U = 2 = 10V = U,.
U^=50V
- Iz.ax=32mA
Hnh 1-50
b) Xc nh cng sut tiu tn cc i trn zener.

Bi gii
a)
Ta bit rng zener bt u thng khi in p ngc t ln n u >U2(hnh 1-47 hay 1-48). Khi in tr ti cc tiu R,î c xc nh;
R
- ^
u.,-u.
5 0 -1 0
250Q
Ch : Khi dng qua zener cc tiu (l thuyt th

= 0), dng qua ti
tng ng c gi tr cc i
Vi in p n nh trn ti u, = U2 th
27
trong trng hp gi tr R, c xc nh chnh l R,j in p ra trn

ti khng i u, =
= const.
in p ri trn in tr hn ch R s l:
U
= U
-U
= 5 0 - 10 = 40V
I _U r_40V _
^
V L = ^ = - ^ = 4 0 m A
" R IkO
Dng in cc tiu trn ti s l:

U
= lR-I,n,ax
in tr ti cc i
R
= 4 0 -3 2 = 8mA
s l:
10
T =1250f= l,25kD
I.m
( iY)in
in 8-10
th biu din vng n p ca mch v trn hnh 1-51.
f U,(V)
t U,(V)
250n
l,25kn
R,
a)
b)
Hinh 1-51
b) Cng sut tiu tn cc i trn zener s l;
Pzmax = u z, *. *Zmax. = lOV . 32mA = 320mW
30 ) Bi tp 1-30. Cho mch in dng it n p (zener) nh trn hnh 1-52.
Xc nh khong bin i ca in p vo in p ra trn ti lun

lun n nh v bng lOV = UzBi gii
Ta bit rng vi R, = const (c nh) in p thng cho zener bt u t
> Uz t ln zener.
T s ta c;
28
'
R + R.
'
U,R, + U ,.R = U vR ,
__ j â a . . _ r
220
Nn
R.
U y= ?
R. <
-Jzmax=60rn A
Vmin
J,=2 0 V ^
Thay cc gi tr Uz, R, R,
ta xc nh c c Uvmin l:
Hnh 1-52
U , ,= 2 0 .t H 5 l ^ = 2 3 ,6 7 V
Dng qua ti s l
f ,(V )
20V .
,,= i= i= ^ = ,6 .6 7 m A
' R, R, 1200
Dng in cc i qua R s l:
Inmax
(V)
^^Zmax ~ 16,67 + 60
23,67
= 76,67mA
36,87
Hnh 1-53
in p vo cc i s l:
Uvmax ~
^ R m a x
Uz
= 220. 76,67.10-^ + 20 = 36,87V

th biu din vng n p ca mch c biu din nh trn hnh 1-53.
1.3. BI TP
Bi tp 1-31. Cho mch in dng it nh trn hnh 1-54. Xc nh
dng in I vi iu kin c tuyn V-A ca it c tuyn tnh ho.
p. l
/V
Si
R,
12V
a)
b)
c)
Hnh 1-54
29
(^3^ Bi tp 1-32. Cho mch in dng it nh trn hnh 1-55. Xc nh

gi tr dng in qua it Iu v in p ra trn ti R.
-5 V
u ra
Si
2,2kQ
Hnh 1-55
a)
b)
^ 3^ Bi tp 1-33. Cho mch in dng it nh trn hnh 1-56. Xc nh

gi tr in p ra
20V Si
Ge
ura
2kn
R,
E ^
lOV
Si
R2^4,7kQ
2kQ
b)
Hnh 1-56
a)
R,
'Wsr--f
l,2kQ
( 3^ Bi tp 1-34. Cho mch in dng it nh trn hnh 1-57. Xc nh

gi tr in p ra u,;, v dng in qua it IdD I,
iH -
Si
IC)
lOmA
ra
R ,< l,2 k n
Ra
AH
f
w v-----
2,2kQ
20V
a)
Hnh 1-57
Dk .
6,8kQ
b)
( ^ ) Bi tp 1-35. Cho mch in dng it nh trn hnh 1-58. Xc nh

gi tr cc in p u |, u ^ 2 .
30
U.,
E
'
.R
lOV Ge
- ---- 1... v w
+ 12V
Si
R.
Si
l,2k n
4 71^
R,
0 2 $ - Ge
a)
Hnh 1-58
:3,3kQ
b)
Bl tp 1-36. Cho mch in dng it nh trn hnh 1-59. Xc nh

gi tr in p ra u v dng in qua it Id.
15V
Si D, D^ Si
.
Si
D.
+20V
U.
Si
> 2,2kn
E2 I -5V
a)
Hnh 1-59
b)

gi tr in p ra v dng in I.
E, T16V
E iov
D | Si
'' I
D,
D, i
Si
Si
Si
'
U.
U.
R
IkD
12V
a)
Hinh 1-60
b)
^^3^ Bi tp 1-38. Cho mch in dng it nh trn hnh 1-61. Xc nh

cc gi tr in p
v dng in I.
31
u ra
r-A ^
Ikd
E T 20V
0,47kQ
D2?
I
Hnh 1-61
Bi tp 1-39. Oio mch in dng it nh trn hnh 1-62. Xc nh

gi tr in p ra v dng in qua it Iq.
4 0 ) Bi tp 1-40. Cho mch in dng it nh trn hnh 1-63. (Cng OR
lgic m). Xc nh gi tr in p ra u,a.

Si
4 1 ) Bi tp 1-41. Cho mch in dng it nh trn hnh 1-64. (Cng
32
AND lgic m). Xc nh gi tr in p ra u.
Si
------ l i - .
ov
ra
Si
-S-
R ^2,2kQ
HInh 1-64
(^4^ Bi tp 1-42. Cho mch in dng it nh trn hnh 1-65. Xc nh

gi tr in p ra
lOV
Si
-KJSi
lOV
Hnh 1-65
( 4^ Bi tp 1-43. Cho mch in dng it nh trn hnh 1-66. Xc nh

gi tr in p ra u.
Si
4 4 ) Bi tp 1-44. Cho mch in dng it nh trn hnh 1-67. V dng
in p ra trn ti R, v dng in Ir.
3- 250BTKTINT - A
33
U^(V)
R
-
A A A
10
Ikn
0
-
-10
2\ y
Hnh 1-67
a)
b)
(^4^ Bi t p 1-45. Cho mch in dng it nh trn hnh 1-68.
a) Xc nh in p ra mt chiu
trn ti.
b) Xc nh gi tr in p ngc t ln cc it.
dc
a)
46 ) Bi tp 1-46. Qio mch in dng it nh trn hnh 1-69.
a) V dng in p ra trn ti.

b) Xc nh gi tr in p ra mt chiu Ujj..
U^(V)
100
Uv
0
-100
T\
2 \ y
a)
34
/t
t(s)
-
Hinh 1-69
b)
3- 250BTKTNT.B
(^4^ Bi tp 1-47. Cho mch in dng it nh n hnh 1-70. V dng in

p ra trn ti R v xc nh gi tr in p mt chiu trn ti R,(U<fc).
R,2,2kn
U^(V)
170
0
-170
tV
-p
t(s)
2,2kQ
2v y
a)
Hnh 1-70
b)
( 4^ Bi tp 1-48. Cho mch in dng it nh trn hnh 1-71. V dng

in p trn ti.
D
Uy
Si
R1 I
w v
2,2kf
a)
Uv
b)
Si 5V
ra
c)
Hnh 1-71
^^4^ Bi tp 1-49. Cho mch in dng it nh trn hnh 1-72

a) Xc nh cc gi tr U, I
v Ir vi R = 180Q.
b) Lp li tnh ton nh cu a) vi R, = 470Q.

c) Xc nh khong bin i R( sao cho mch vn lun lun trng
thi n p
u, = Uj.
35
' r.
+
220 n
20V
U = 10V
Pzrnax=400mW
R .|
u.
Hnh 1-72
( 5^
Bi tp 1-50. Cho mch in dng it nh trn hnh 1-73. Xc

nh khong bin i ca in p vo in p ra trn ti lun n
nh U, = U, = 8V.
R
--------- Â ^------------- 91Q
U =8V i
Pz.ax=400m W _
P^=u,
ro,22ko
Hnh 1-73

gi tr in p ra mt chiu trn ti
vi tr hiu dng in p xoay
chiu trn th cp ca bin p bng 120V = Ui (rms).
Hnh 1-74
Bi tp 1-52. Cho mch in nh hnh 1-75.

Bit
u =
lOV
R = 20kQ
36
R, = 2 0 kQ
R, = 5 kQ
Gi thit it l l tng,
Khi thng in tr thun R,h = OQ
Khi tt in tr ngc Rg = ooQ
Hy xc nh in p trn R,.
D
----- v w R.
R,
'J .
Hnh 1-75
Bi tp 1-53. Cho mch in chnh lu na chu k nh hnh 1-76.

Nu bit u =
thc in p trn R,.
sincot; gi thit it D l l tng. Hy xc nh biu
AAAr
R,
u,
Hnh 1-76
Bi tp 1-54. Cho mch in dng it Zener nh hnh 1-77.

BitU, = 8,2V, d n g l,= lA
R,
= lOQ.
Tnh in tr b R, m bo u ; = , = 8,2V khi in p u tha) doi

10% quanh gi tr u = 12V.
+-
R.
A/W
R.
Hnh 1-77
37
Bi tp 1-55. v s lp li bi 1-77.
- Xc nh in p trn Rj.
- Xc nh dng qua it Zener Dj.
- Xc nh cng sut tiu tn trn D^.
Nu bit in p mt chiu l 12V, in p trn LED l 2V, dng qua
LED l 20mA.
a) Hy xc nh in tr hn ch R.
b) Nu mc song song 10 LED thay cho mt LED trong s . Hy xc
nh in t r c n thit.
+>
Hlnh 1-78
38
Chong 2
TRANSISTOR LNG cc V TRANSISTOR TRNG

Transistor lftig cc (BJT) gm ba lp bn dn p v N ghp xen k nhau;
tu thuc vo cc tip gip P-N m hnh thnh hai loi transistor: P-N-P
(transistor thun) v N-P-N (transistor ngc) nh k hiu trong hnh 2-1.
+ c
.
B -
t
Transistor riguc
a) N-P-N
Transistor thun
b) P-N-P
Hnh 2-1. K hiu hai loi transistor N-P-N v P-N-P
Chiu ca dng in mt chiu chy qua transistor c ch

v trng vi chiu mi tn quy c cc emit.
tronghnh
lm vic ch khuch i, in p ngun E c cp

cho ccEc tu thuc vo loi transistor c ch trong hnh 2-1. in p phn cc cho
tip gip B-E phi lun l phn cc thun, tc l i vi transistor N-P-N cc
haza phi dng so vi cc emit, ngc li, i vi transistor thun P-N-P
cc B phi m hn so vi cc E.
Trong c hai loi transistor, cc dng in u c th coi nh tp trung
ti mt nt
Ie + Ic + Ib = 0 hay Ie = Ic + Ib v Ig Ig, ic
39
C ba cch mc s c bn ca transistor l emit chung (EC) baz

chung (BC) v colecto chung (CC) cn c vo cc no c ly lm im
chung cho c u vo v u ra.
Trong cc s tra cu v thuyt minh thng cho cc thng s v c
tuyn theo s mc EC hay BC.
i vi s mc BC dng in vo l Ig, dng in ra l Ic, h s
khuch i dng in tnh a c xc nh:
a = = _ k _ < i
h
Ic+ Ib
thc t h s a vo khong (0,9 ^ 0,99).

i vi ch xoay chiu, khi im lm vic thay i trn c tuyn
ra, h s khuch ai dng xoay chiu a
trong
A Ie
l bin thin
dng in emit cn AIc l bin thin dng colect.

S mc emit chung (EC): dng in vo l dng Ig, dng in ra
l dng Ic- H s khuch i dng in tnh c xc nh;
tu thuc vo loi transistor p c gi tr t vi chc n hng trm ln. Ic v

Ib l gi tr dng in ti im lm vic tnh.
ch xoay chiu h s p c xc inh p =
AIb
Nu bit h s khuch i a c th xc nh c h s p v ngc li:

a = ^ v p =
p+1
"
1-a
Ngoi ra cn cc tham s khc nh in tr vo, in tr ra, h dn...

Cc tham s ca trahsistor cng c th xc nh gn ng bng phng php
th da vo c tuyn ca transistor.
40
AI,
Ib,
in tri ra R = rcB = ^
AI,
transistor lng cc lm vic bnh thng ngoi in p cung cp E cho
cc E v c cn mt in p phn cc mt chiu t vo Baz-Emit gi l thin
p. in p ny dng thit lp ch mt chiu v im lm vic tnh.
Thin p ban u UggQ s quyt nh dng in tnh, khuch i,
mo.
u Bo (0,2 4-0,6) V i vi transistor Ge

UggQ (0,54-1,0) V i vi transistor Si.
C ba cch to thin p cho transistor.
- To thin p bng dng baz (hnh 2.2a)
TTiin p UggQ c xc nh
Suy ra in tr R| cn thit
E - U^BEO
BO
Trong : E l in p ngun;
UgQ l thin p cn to ra;
IgQ l dng baz xc nh theo UggQ trn c tuyn vo ca transistor.
a)
Hnh 2-2. To thin p dio transistor lng cc
b)
41
- To thin p bng phng php phn p (hnh 2-2b)

Thin p UggQ = Ip.Ra- Suy ra
D _ ^BEO
trong Ip - dng phn p I
R| + R 2
Ip c chn bng (4 ^ 10)Igo

Nu cho trc ggo xc nh c Igo trn c tuyn vo ca transistor.
in tr R| xc nh t biu thc:
^BO
Suy ra
E - Ip.R2 = E - UggQ
R,
E -U
BEO
p+lB O
Trong trmg hp c in tr mc emit th trong cc cng thc trn

phi tnh n st p mt chiu trn in tr .
- Ch mt chiu v ng ti mt chiu.
Xc nh im lm vic tnh 0; khi cung cp cho baz thin p ban u
U beo . th s thit lp dng tnh
v in p mt chiu ÊO To ca
im lm vic tnh
o (Ic o UcEo)- im o cng chnh
l giao im ca
ng ti mt chiu vi ng c tuyn ng vi dng Igo (hnh 2-3).
a)
b)
Hnh 2-3. c tuyn vo (a) v c tuyn ra (b)
42
- ng ti mt chiu l s ph thuc dng Ic vo in p

in tr ti mt*chiu
ng vi
v c xc nh theo biu thc;

u = E - Ic.R=
= 0 -> I,, = , xc inh c im B.
Cch dng: Cho

Cho
= 0 ^ u = UcE = E, xc nh c im A.
Ni im A vi B c ng ti mt chiu.
- ng ti xoay chiu R_, cng c xy dng trn c tuyn ra nhng
i vi in tr ti xoay chiu, tc l khi c tn hiu vo, eng l ng
thng v i qua im lm vic tnh o .
Cch dng: T im U^gQ trn trc honh, cng thm mt in p bng
I(,qR_ , c im A'. K ng thng qua hai im o v A', c ng ti
xoay chiu.
Cng c th xc nh dng !(,
E
= c im B' trn trc tung, k
ng qua B' v o cng nhn c ng ti xoay chiu.

Trong cc bi tp p dng, c th s dng mt trong hai cch trn, tu
tng trng hp c th.
- Transistor trng (FET) l loi transistor c ch to da vo hiu
ng trng, l iu khin dn in ca bn dn loi N hay p, nh mt
in trng bn ngoi.
C hai loi FET - l J-FET (iu khin bng tip xc P-N) v
MOSPET l loi FET c cc ca cch ly bng lp xit. Hnh 2-4 l k hiu
JFET knh N v knh p.
D
D
G
a) J-FET knh N
b) J-FET knh p
Hnh 2-4. J-FET knh N v knh p
43
s - l cc ngun
D - cc mng
G - cc ca.
V phn cc cho cc ca ca J-FET lun l phn cc ngc nn in tr
vo rt ln v dng in ly = Iq = 0; I = Ij.
Dng Ij c iu khin bng in p t vo cc ca Uqs v c xc
nh bng biu thc:
u OSK
trong
gs
l in p bt k t vo G-S;
Ugsk l in p kho ng vi dng Iq = 0.

Quan h gia Ijj v Uqs c din t bng c tuyn truyn t cn quan
h I q = f(Ds) vi cc tr s Uqs khc nhau c gi l h c tuyn ra. y
l hai c tuyn c trimg cho FET, cn c vo , c th xc nh gn ng
cc thng s ca FET-
b)
Hnh 2-5. c tuyn truyn t (a) v c tuyn ra (b) ca J-FET knh N
H dn ca FET: g =
hay mS (milisimen) chi r khi in
AUqs V
p t vo cc ca thay i IV th dng I thay i bao nhiu mA.
MOSFET gm hai loi: MOSFET knh t sn v MOSFET knh

cm ng.
MOSFET knh t sn; knh dn in loi N hay p hnh thnh ngay t
khi ch to. c tuyn truyn t v c tuyn ra ch dn trong hnh 2-6a, b.
44
b)
Hnh 2-6. c tuyn truyn t (a) v c tuyn ra (b) ca MOSFET knh N t sn
Cn c vo c tuyn truyn t v c tuyn ra c th xc nh gn

ng cc thng s ca MOSFET.
MOSFET knh cm ng: ch khi t vo cc ca in p ngoi (knh
N l in p dng), th knh dn in mi hnh thnh v mi c dng in
chy qua (hnh 2-7).
Phn cc cho FET.
C hai phng php phn cc (to thin p) ph bin cho FET: to thin
p t cp v dng phn p.
b)
Hnh 2-7. c tuyn truyn t (a) v c tuyn ra (b) ca MOSFET knh cm hg N
Phcmg php t cp s dng ngay dng j) chy qua Rs to st p v dn

qua in tr Rq t vo cc ca G (hnh 2-8a).
45
V 1(3= 0; Ip= Ij nn Urs= Id-Rs= Uqs; cc (+) t vo cc s v cc (-)

t vo cc G.
R - gi l in tr to thin p.
Rq - l in tr dn thin p; Ro c tr s ln hng chc hoc trm kQ.
R, = - ^
Hnh 2-8. To thin p cho J-FET
Hnh 2-8b l s to thin p bng phng php phn p.

in p trn cc ca Q c xc nh
G = ~ Ra
R.+Ra
Uo l in p cc G so vi t.
U
gs
= U
-U 3 =
-I
oR s
Mch phn p cho MOSFET knh N t sn cng tng t nh hnh 28b. Ring i vi MOSFET knh cm ng, vic to thin p c khc vi J-
FET, n c to thin p ging nh vi transistor lng cc N-P-N: c th

dng phng php hi tip t cc D v cc G hay dng phcmg php phn
p (hnh 2 -9 a, b).
Trong s 2-9a DS =
U gs ( v dng l o =
0, qua Ro khng c dng chy qua)
U dS E - Iq-Rq
Suy ra
Uq5 = E - Iq.R0.
Trong s 2-9b, in p cc ca so vi t.
46
+E
RD
i-
a)
Hnh 2-9. To thin p cho MOSFET knh cm ng N
Ug =
R| + R 2
b)
E
^GS ~
^D'^s ~
in p U ds = E =
R, + R2
= E - Id(Rs + Rd)
2.2. PHN BI TP C LI GII

( 5^
Bi tp 2-1. Mt transistor N-P-N mc theo s BC c dng in L

= Ig = 50mA; dng in Ic = 45mA.
a) Xc nh h s khuch i dng mt chiu a.
b) Nu mc transistor theo s emit chung (EC), hy tnh h s p.
Bi gii
a) H s khuch i dng mt chiu a
I
49
a = -^ = = 0,98
I e 50
b) H s p tnh theo a
>=
1 -a
= ............= 49
1-0,98
(^5^ Bl tp 2-2. Mt transistor c dng tnh emit Ig = l,602mA; dng

tnh baz Ig = 0,016mA; b qua dng in ngc.
47
a) Xc nh dng tnh colect Icb) Tnh h s khuch i p, a.

Bi gii
Tnh dng tnh colect Ic
= Ig - Ig = r,602 - 0,016 = l,586mA
H s khuch ai a = =
Ie
H s khuch i p
^ = = 0,99
Ie
1,602
l _ I - I b _ 1,602-0,016
I,B
I
0^016
99,125
Cng c th xc nh p theo cng thc:
a
1 -a
0,99
= 99
1-0,99
59) Bi tp 2-3. Bit c tuyn vo v c tuyn ra ca transistor mc theo

s emit chung EC nh hnh 2-10.
Bng phng php th hy xc nh:
a) H s khuch i p ti im lm vic A.
b) in tr vo
= BE-
c) H s khuch i a nu mc theo s baz chung BC.

d) Nu tn hiu vo Ig thay i, xc nh h s khuch i dng xoay chiu.
- m A )
Ig=0,4iiA
40
Ig=03mA
i..
l3=0,2mA
p=0,lmA
0,2
0,4 0,50,6
a)
0,8 Ugg(V)
ce(V)
b)
Hnh 2-10. c tuyn vo (a) v ra (b) ca transistor
48
Bi gii
a) H s khuch i tnh ti im A.
p = ^ = : l -3 = 100
BO
0 ,2 .1 0
1..^
0 ,7 0 -0 ,5
0,65
^
b) in tr vo R v = r,^ = ----_BE
SS- _=
, =
= 3 ,2 5 k Q
ALB
(0,3-0,1)10-' 0,2.10'
c) Nu mc theo s baz chung BC h s khuch i tnh a c
xc nh
a =
1+ p
=^
= 0 ,9 8 9
100+1
d) Khi dng in vo Ig thay i t 0,1 n 0,3mA, tm bin thin dng

Ic tng ng trn c tuyh ra, tnh c h s khuch i p xoay chiu.
/
_ A c _ ( 2 8 ,5 - 9 ,8 ) 1 0 -^
AL
= 93,5
( 0 ,3 - 0 ,1 ) 1 0 '
(^6^ Bi 2-4. Cho mch khuch i dng

transistor nh hnh 2-11
B it;
Rc = 5kQ
p = 50
in tr vo Ry = gE = IkO
in p vo Uy = UgE = 0,1V
a) Xc nh dng in vo v dng in ra.
b) Tmh h s khuch i in p ca transistor.
Hnh 2-11
Bi gii
a) Dng in vo
0,1
= 10"" = 0,lm A
Dng in ra:
I^^= I^ = p3 = 50.0,1 =5mA
4- 250BTKTINT - A
49
in p ra:
U, =
= Ic-Rc = 5.10^5.10^ = 25V
b) H s khuch i in p
0,1
Bi tp 2-5. c tuyn vo v ra ca transistor c dng nh hnh 2-12.

a) Hy xc nh h dn ca transistor ti im lm vic
o.
b) Nu bit in p BE thay i 0,2mV, in tr Rc = 4kQ. Hy xc

nh in p ra.
c) Tnh h s' khuch i in p.
Ic(mA)
50îA
1^=4,2
40|J.A
U=3,Q.
30Â
20|aA
I=10HA
7 0,8 U,(V)
U
a)
Hnh 2-12. c tuyn vo (a) v c tuyn ra (b) ca transistor
ce(V
b)
Bi gii
a) H dn ca transistor c xc nh bng phng php th
s = _c_
AUbb V
s = A 2 L - = <i2M )E , I = ,2 ^ hay12ms
-u ,
0 ,7 -0 ,6 0,1
b) Nu AUgg = 0,2V th dng Ic bin thin

AIc = AU Bg.s = 0,2.12 = 2,4mA
in p ra u = AIc-Rc = 2,4.10 \ 4 . 10' = 9,6V
50
4- 250BTKT1NT - B
c) H s khuch i in p
K = H ^ = M = 48
u, 0,2
(^6^ Bi tp 2-6. Transistor lng cc c c tuyn vo v ra mc theo s

EC nh hnh 2-13. Cn c vo c tuyn hy xc nh gn ng cc
thng s' sau:
a) in tr vo tnh ti im o.
b) in tr vo ng.
c) H s khuch i dng in mt chiu p.
d) H s khuch i dng xoay chiu.
m A )
- I b(^ A )
250fxA
40
200n A
250
200
30
25,
ISOuA
15. , L .
50
i Q A .
f ! !
/
... ---------
I=50jiA
BE(V)
l U^V)
b)
a)
Hnh 2-13. c tuyn vo (a) v ra (b) ca transistor lung cc
Bi gii
a) in tr vo tnh
R =r
''
Igo
, =4kQ
150.10-
b) in tr vo ng Rvd
o
^ V
- U be, _
a t
AI B
I b, - I b.
0 ,6 8 - 0 ,5 2
(200-
100)10
= l,6 k Q
c) H s khuch i dng mt chiu p

51
I50.10-*
d) H s khuch i dng xoay chiu p_

AI3
AIb= I 3 -Ib_ =(200-100)10-^ = 100.10 ~6
Tm AIc tng ng trn c tuyn ra
I =30mA;
= 15mA
AIc = (30-15).10l
(200-100)10-"
( 6 ^ Bi tp 2-7. Oio mch in nh
hnh 2-14. Nu bit dng Ico =
5mA; h s p = 100;
5V;
thin p U beo = 0,6V; E = lOV.

a) V cc dng in mt chiu chy
trong mch.
b) Tnh in tr R e
Hnh 2-14
c) in p Uc so vi t.
Bi gii
a) Dng in mt chiu chy trong mch nh ch n trong hnh 2-14.

I e = Ic + Ib
b) in tr to thin p R| c xc nh.
R,
E -U ^
E -U ^ o
1 0 -0 ,6
9,4
I bo
^co
p
^ ^q-3
100
5.10 *
c) Tnh in tr R,
52
188ka
5.10-
d) in p Uc so vi im mass chnh l in p UgQ

U c = U ,,o = 5V
Bi tp 2-8. Cho mch in nh hnh 2-14. Nu bit R, = 220k0;

Rc = 2kQ; = 50; ggQ = 0,5V. Hy xc nh cc thng s tnh:
dng Ig, Ic, Ie, in p Uceo
Bi gii
a) Xc nh dng Igo
R,
220.10'
220.10'
b) Dng
Ico = l = 50.34, l K = 1,7mA
c) Dng
1^0 = Ico + I b o = 1>7 + 0,0342 = 1,7342mA.
d) in p U^go
U eEo=E-Ico.Rc=10-l,7.10"'.2.10^=6,6V
Bl tp 2-9. Mch in nh bi 2-7 nhng mc thm in tr Re

emit v bit st p trnin tr ny l IV.
a) Xc nh tr s' R|, Rc,
Re-
b) Xc nh in p U c U so vi im mass ca my.
Bi gii
a) Xc nh Re
U
Suy ra
re
= I eo- R e = 1 V
_
IV
IV
Rb = =
Iro +
------- = 198Q
5 .1 0 '^ + ~
10-^
100
- in tr R
53
_
'
E - ^
beo
I bo
-U r , _ 1 0 - 0 ,6 - 1
168kQ
5.10-^
I bo
- in tr Rc
^CO^ C ^
V.
Suyra:
^CEO ^R,
V.V.V/
IVJ.-
R, =
= 800Q
leo
5 . 10-^
b)in p
Uc = E - IcoR c= 10-5.10l800 = 6 V
hay
U c = U ,,/ + U ,^ = 5 + l = 6 V
in p
Ub = Uggo + R = 0,6 + 1,0 = 1,6 V
( e ^ Bi tp 2-10. Cho mch in

+E
nh hnh 2-15. Bit R, = 300kQ;

Rh = 2,7kQ; p = 100; 3,o =
0,5V ;E = 12V.
a) Xc nh cc tham s tnh.
ra
b) Nu mc R, = 2,7kQ hy tnh
in tr ti xoay chiu.
R.
R.
Bi gii
a) Trc ht xc 'nh dng tnh
baz I
Hnh 2-15
BO^'1 ' '-'BEO ' ÊO ^'E
( y
eo
Suyra l30 =
BEO
= I co + I b o = I b o + P I b o = 0
E - U BEO
..
R, +(1 + P)Re
+ P)Ibo)
1 2 -0 ,5
300.10"+(1 + 100 ).2 ,7.10^
- Dng tnh 1^0 = lOOIgo = 100.20îA = 2mA

- Dng tnh 1^0 = Ic + Ibo = 2 + 0,02 = 2,020m A .
- in p trn cc E, cc c v B so vi im mass:
54
= 20A
U e = I eo-Re = 2,02.10-^2,7.10" = 5,45V

in p
Uc
in p
= E = 12V
U b = Ue +
= 5.45 + 0,5 = 5,95V
b) Nu mc R, = 2,7kQ th in tr ti xoay chiu mch emit.

R
=R
/ /R =
'
= A Z : ^ = l,3 5 k Q
R e+R ,
2,7 + 2 ,7
Bi tp 2-11. Cho mch khuch i dng ansistor lng cc nh

hnh 2-16a. Bit E = lOV; R c = 5kQ; Re = 0,2R R, = 85kO;
R , = 15kQ ;
= 4 V ; Ico c
; p = 50-
a) Hy xc nh cc tham s tnh ca transistor.

b) im lm vic tnh o v dng ng ti mt chiu.
a)
b)
Hnh 2-16
Bi gii
a) C th coi
ÊO ~ ^<X)
E -U
Suy ra:
CEO
c ' * 'E
Ic o =
1 0 -4
= 10-Â = lmA
(5 + l).10-
55
- Dng tnh baz IgQ:
- Thin p
UrB0
EOIp-R^
p 2 ~ ^RE
RE ~ ------- ----Rt2~ÊE0O'ÊE
(15+ 85). 10^

b) To im lm vic tnh O:
10-M0^=0,5V
= lmA;UcE0 = 4 V . t) dng ng
ti mt chiu cn xc nh mt im na. T biu thc phng trnh ng

ti mt chiu.
U = E - I c .R c
Cho Ic = 0
u = E = lOV (im A trn trc honh) ni qua im A
Bi gii
- in tr ti xoay chiu R_.
R. = R ^ //R ,= ^
=^
= 2,5kQ
R c+R . 5 + 5
ng ng ti xoay chiu R_ cn xc nh mt im trn trc
honh hay, trn trc tung ri ni vi im lm vic tnh o. T im
cng thm mt on ng vi in p bng IcqR-
IcoR_= 1012,5.10^ = 2, 5V
ta c im A' trn trc honh (hnh 2-16b).
Ni im A' vi im o v ko di s c ng ti xoay chiu. Cng
c th dng ng ti xoay chiu bng cch xc nh im B' trn trc tung
E
10
ng vi dng I = = r = 4m A , ri ni im B v o .
&
^
R_ 2,5.10'
56
( m ) Bi tp 2-13. Cho mch in nh hnh 2-16a. Nu E = lOV; CEO = 4V ;

Rg = 0,1 Rc, Ico=20m A;
UgQ=0,7V, t c tuyn vo ca
transistor ng vi UggQ = 0 ,7 V , tm c IgQ = 0,2m A .

a) Xc nh tr s cc in tr Rc, Re, R i, R-> m bo c cc
thng s trn.
b) Xy dng ng ti mt chiu.
Bi gii
a) Xc nh tr s cc in tr
T biu thc:
E=
^CEO ÊOÊ *
^CEO
( y c th coi I^Q IgQ n gin cho vic tnh ton).

Suy ra
^
+ R . = - - - ggg =
l
20 . 10 ^
Re
0,1 Rc =
= 300Q
l,lR c ~ 3000
= 272,70
1,1
Rg = 0 ,l R c = 2 7 ,2 Q .
- in tr Rj c xc nh theo biu thc:

~
'^BEO
Suy ra
( y chn dng phn p Ip = 5 Io )
R
^
0.7 + 20.10-.27,27..^
5.0,2.10-
5.1
- in tr R| c xc nh t biu thc:
Ri(Ip+ I^q) = E - IpR2 = E - UggQ-ÎgQRg

"ura
E - U o - I ^ R , _ 10 - 0,7 - 0,5 4 5 _ ,
5 l" + I
6.0,2.10-
57
b) xy dng ng ti mt chiu, ngoi im lm vic tnh o bit

0(20mA, 4V) cn xc nh mt im na.
T phng trnh UcE = E - Ic(Rc + Re)
nu cho UcE = 0 th
E
10
R. + Rg
300
= 0,0333A = 33,3mA
ta c im B trn trc tung, ni B vi

chiu (hnh 2-17).
o v ko di s c ng ti mt
Hnh 2-17
70) Bi tp 2-14. Bit c tuyn truyn t v c tuyn ra ca mt J-FET

knh N nh hnh 2-18.
a) Xc nh trn th dng b ho Ij5ss^ v in p kho U qskb) Tnh dng Iq ng vi cc gi tr Uos = OV; Uos = -2 V; Uos = -4V v
U g s = -6 V.
Bi gii
T c tuyn truyn t Id =
vi U q s = ov, Ij5ss = 15mA.
f( G s)
hnh 2-18a, dng bo ho Ipss ng
in p kho U gsk ng vi Iq = 0 , trn th xc nh c Uqsk = - 8V.

b) Dng Ij3 ph thuc vo in p QS v c xc nh bi biu thc;
58
a)
b)
Hnh 2-18. c tuyn truyn t (a) v c tuyn ra (b) ca J-FET knh N
Id = Idss(1 - ^ ) '
U GSK
Ugs = 0 ^ Id = Idss = 15mA
Uos = -2V-^
U
gs
-4V
= 15 (1 -
15
lo =
-0
= 8,437mA.
=
3,75mA.
Ucs = -6 V ^ Id = 1 5 (1 - )' = 0,9375mA.

( 7 1 ^ Bi tp 2-15. Cho mch in dng
J-FET knh N nh hnh 2-19. c
tuyn ca J-FET nh bi 2-14.
Bit E = 15V; im lm vic tnh
c chn ng vi Rd = IkQ.
+E
a) Xc nh tr s R .
b) Xc nh thin p U qsq.
H h -p -H i
ra
c) in p trn cc mng Up.

Bi gii
a)
biu thc:
Hnh 2-19
in tr Rs c xc nh theo
R
- -U q d k
21
8V
2.15.10-^
= 266Q
59
b) Thin p
GSO
= RS
Jn
-^D = 266.7,5.10'" 2 V
(y I t , = % = ^ = 7,5mA)
2
2
c) in p Uq
U d = E - I d. R d = 15 - 7 ,5 .1 0 ^ 1 0 ^ = 7 ,5 V
Bi tp 2-16. Cho mch to thin p

cho J-FET knh N bng phng php
phn p nh hnh 2-20. Bit: E = 15V;
R, = 600kQ; R, = 150kQ; R =
l,5kQ; Rs = IkQ;
5mA.
a) Xc nh Uasb) Dng cc mng Ip.

c) in p trn cc mng Up.
Bi gii
a)
GS
Hnh 2-20. Mch to thin p

cho J-FET
(600 + 150)10
R| +R j
5.10"\10' = - 2 V
E
15
150 = 3V
in p trn cc ca U f - _
,R ,=
R ,+ R , " 600 + 150
in p trn cc ngun Us = Q - U qs = 3 - (-2 ) = 5V.
hay
Us = Is.Rs = Id-Rs = 5.I 0 M 0 = 5V
b) Xc nh li dng cc mng Ip
I. = L = ^ =^ = 5.10-'A = 5mA
^
Rs
10 '
c) in p trn cc mng Up
Ud = E-Id.Rd= 15-5.10M ,5.10^ = 7,5V
in p U ds = Uo - U s = 7,5 - 5 = 2,5V.
( t ) Bi tp 2-17. Cho mch in dng MOSFET knh t sn nh hnh
2-21 a v c tuyn truyn t nh hnh 2-21b. Bit: E = 12V;
Ro = 200kQ; u 3 , 5 V .
a) Hy xc nh tr s in tr R| to thin p yu cu U qsq= -2V.
b) Xc nh dng 1,30
60
b)
a)
Hnh 2-21. Mch in (a) v c tuyn truyn t (b)
Bi gii
a) GSO =
- U 30
= - 2 + 3,5 = 1,5V
V dng lo = 0 nn c th vit
R .=
Suy ra
Thay s: R,
'
R. =
UG
R, + R q
R.
RG
12 200
200 = 1400k0 = 1,4MQ
1,5
b) Dng 1^0 = 5mA ng vi Q5Q= -2 V (xc nh trn th 2-2 Ib).

( 7^ Bi tp 2-18. Nh bi 2-17. Nu chn im lm vic ng vi
U qsq = - 2 V , dng IpQ = 5mA; in tr Rjj = l,2kQ.
a) Hy xc nh in p U q.
b) Tnh in tr Rs.
c) Khi in p vo thay i trong khong -2V 0,5V, hy xc nh bin
in p ra v h s khuch i K.
Bi gii
a) in p
Ud = E - IdqRo = 12 - 5.10M,2.10^ = 6 V.
b) in tr Rg.
61
3,5
I do
= 7000
5.10-^
c)
Khi in p vo U qs thay i trong phm vi -2V 0 ,5 V, xc nh
trn th 2-2 Ib dng Id thay i t 2,5mA n 6,25mA, nh vy bin thin
dng Id t nh - nh
AI = 6,25 - 2,5 = 3,75mA
in p ra (nh - nh) s bin thin
u = AId-Rd = 3,75.10-M,2.10^ = 4,5V
H s khuch i in p
1
tp 2-19. Mt MC^PETkih t sn c c tuyi ttuyi t nh Hnh 2-22.

a) Cn c vo c tuyn xc nh h n ti vng ngho GS = -2V v
ti vng giu QS = +3V.
b) Cho nhn xt.
iD(mA)'
15
vng g i u /
10
7,5
5
vng ngho
il
-4 -3 -2 -1
1 2 3 4
Hnh 2-22
Bi gii
a) Ti vng ngho, theo th
U gs
= -2 V -> Id = l,2mA
Ugs = -IV
Id = 2,5mA
A U o s= lV
AIp = 2,5mA - l,2mA = l,3mA

62
'
Uqs(V)
H dn g = -" - - = l,3^^^hay l,3mS (milisimen)

AUqs
V
Ti vng giu Uos = +3V -> Id = lOmA
Ugs = +4V
Id = 15mA
Al
15-10 _ mA,
_
H dn g =
= = 5 hay 5mS
AU GS
4 -3
b) Nhn xt:
vng giu h dn ca MOSFET ln hn vng ngho.
Bi tp 2-20. Cho mch in dng
J FET knh N nh hnh 2-23. Bit
Ro = 1,5MQ; Rs = 300Q; R =
2,2kQ; R, = 15kQ; E = 15V.
a) Xc nh in tt ti xoay chii R_.
b) H dn ng ti Uqs = -2V.
c) Tnh h s khuch i Ky.
d) Tnh in p ra
Uv = 0,5V.
n.u
B gii
a) in tr ti xoay chiu R_
b) H dn ti gc:
m o
GSK
H dn ti im Ucs = -2V.
m
mo
U GS
U GSK .
= 5mS 1
-2
-6
= 3,33
lA
c) Tnh h s khuch i
K = gR_ = 3,33.10-'. 1,92.10' = 6,393.
63
d) Xc nh in p ra
Uos = OV;
gs
= +2,0V; Uos = -2,0V.
Bi gii
- Khi Uq5 = 0 > Ij) = Idss 15mA.
-Khi
Ucs = +2 V ^ I ^ = I^s3 1
uGSK
- Khi Uqs = -2 V -> In = 15.10
= 15.10 -3
-3
-6
-6
= 26,66mA
= 6 , 6 mA.
Bi tp 2-22. Mt MOSFET knh N cm ng c c tuyn truyn t

v mch in nh hnh 2-24.
a) Hy xc nh bng phng php th h dn g ti im lm vic
0(8V , 7,5mA).
b) Tnh tr s R q.
c) Tnh in p ra nu in p vo bin thin IV.
.+15V
a)
64
Hinh 2-24
b)
Bi gii
a) Xc nh h dn g.
gm =
. ?:.^
8 V -7 V
AU GS
b) in tr Ro
p i. = J 5 _ 8 _ ^
-3
I,DO
7,5.10
(yUos = UGs = 8V vIc = 0).
c) Xc nh U,, nu Uv = 1V.
, 2 ,5 i ^ h a y 2 , 5 m s
chn R =.lkQ
u = Ki^.Uv = g.Ro.Uv = 2, 5. ^. 0M,0 = 2,5V
( t^
Bi tp 2-23. Cho mch in

dng J-FET knh N nh hnh
2-25. Bit;
E = 12V; Rg = IMQ;
c 5q = 1 , 2 V . in p trn Rs,
Urs = 0,2E = 2,4V. H dn
g = 5
. in tr cc mng
ngun r^ = 200 kQ.

= 0, Ir,^ = 0 , 1 ,200kQ = 20 kn.
a) Tnh in tr R.
b) Tnh h s khuch i Ky.
Bi gii
a) Tnh R,
R.
R| + R q
Suy ra
R. =
E.R,
vU ks- U oso
^RS
=
-1
10'
12
1 = 9MQ.
b) H s khuch i Ku.
Ku = m- Rd = 5.10 ^20.10^ = 100.
5- 250BTKTNT-A
65
Chng 3
CC MCH KHUCH I TN HIU B

phn tch v tnh ton cc thng s k thut i vi b khuch i
in t dng transistor lm vic ch tn hiu b thng da vo cc loi
s tcmg ng.
Transistor thng c biu din bng hai loi s tng ng:
- Loi th nht gi l s tng cmg vt l hay s tofng cfng
hnh T v cng c tn gi l s tng ng (The g transistor model).
- Loi th hai c gi l s tng ong tham s' bao gm cc tham
s tr khng, in dn hoc hn hp.
C hai loi s tng ng ca transistor c th coi l khng ph
thuc vo tn s n mt phm vi kh cao:
- i vi cc loi transistor lng cc (BJT) khi tn s tn hiu
f ,< ( 0 , l - f 0,5)f,.
- i vi cc loi transistor hiu ng trng (FET) khi tn s tn hiu
f,< (1 0 ^ 150)MHz.
phm vi tn s cao hn nhng s liu trn, khi s dng cc loi
s
tng ofng phi c la chn mt cch thch hp v khng c b qua
nh hng ca cc t k sinh (Cj(;s) bn thn transistor n s truyn t tn
hiu qua n.
Vi mi kiu mc i vi transistor c ba h c tuyn Volt-Ampe
quan trng: h c tuyn vo, h c tuyn ra v h c tuyn truyn t.
C th xy dng ng ti mt chiu (R.) v ng ti xoay chiu (R_)
trn cc h c tuyn c bn ca transistor v xc nh cc tham s mt
chiu cng nh xoay chiu ca tng khuch i in t.
66
5-250BTKTINT.B
Cc thng s k thut c bn i vi tng khuch i in t dng

transistor bao gm; tr khng vo (Ry), tr khng ra (Râ), cc h s khuch
i in p ( K u ) dng in ( K ) , cng sut ( K p ) .
H s khuch i nhiu tng ghp lin tip bng tch cc h s thnh phn.
3.2. BI TP C LI GII
( 8^ Bi tp 3-1. Cho tng khuch i dng BJT nh trn hnh 3-1.
a) Xc nh r^.
b) Xc nh tr khng vo ca tng Ry.
c) Xc nh tr khng ra ca tng
(vi fo = oo)
d) Xc nh h s khuch i in p Ku (vi Q= oo)

e) Xc nh h s khuch i dng in
(vi Q= o)
ECO.J 2 V
II u
Cj 10|iF
p=100
r=50kQ
Hnh 3-1
Bi gii
Chn transistor T loi Si v thin p Uggo =0,7V
a) Dng tnh IgQ s l:
I bo =
Rg
12V -0,7V
470kQ
,
= 24,04îA
Dng tnh IgQ s l:

1,0
=(1 + P)l30 = (l + 100)24,04.10-'A = 2,428mA
in tr r, c xc nh:
67
1^0
2,428.10-'
b) Tr khng vo c tnh:
Ry Rb // TvT
trong Tvt - tr khng vo ca transistor
fy^ = pr,= 100.10,71 = l,071kQ
Ry = 470//1,071 = l,069kQ.
c) Tr khng ra ca tng c tnh:
R = Rc / / Q = Rc / / 0 = Rc = 3kQ .
d) H s khuch i in p ca tng:
r,
10,71
e) V Rg > lOrvT = lOp.r, (470k0 > 10,71k0)

nn
K p = 10 0
Bi tp 3-2. Tnh ton lp li cho bi tp trn*hnh 3-1 vi Q= 50kQ.

Bi gii
Ta nhn thy cc thng s trong hai cu a, b s khng c g thay i nn;
a) r,= 10,710
b) Rv= l,0 7 1 k a
c) Tr khng ra ca tng c tnh:
= R e // ro = 3 // 50 = 2,83k.
d) H s khuch i in p ca tng.
r.
10,71
-264,24
e) H s khuch i dng in Kj
Y- _
P-Re-rp
(ro+R^XRg + r^^)
100.4 7 0 .5 0
(50+ 3)(470 + 1,071)
C th tnh K: theo biu thc khc:
68
^3
K , = - K > = 2 H 3 1 ) W 9 =94,16
3
Bi tp 3-3. Cho tng khuch i dng transistor lng cc (BJT) nh
trn hnh 3-2. Hy xc nh:
+E^22V
R
n,
^3 6,8kQ
56kn
lOîF
c'lO jiF
X -
p=90
Rra
^1
R >8,2 kf
n <
r C3 20|XF
l,5kQ
R,
1
Hnh 3-2
a)r,
b) Rv
c) R,, (vi fo = 00)
d) Ku (vi To = co)
e) Ki (vi To = 00)
Bi gii
Chn transistor T loi Si vi thin p Uggo = 0,7V
a) Ta c:
U = -M e e .. ^ 2.22 ^ 2,81V
R ,+ R 2 56+8,2
U e = U b - U 3 eo = 2.8 1 -0 ,7 = 2,11V
Ig = - ^ =
Kt qu l;
r,
e
_ _ = l,41mA .
l,5kQ
= = 18,44Q
1.41
69
b) Ta c: Rp = R, // Rj = 56kQ // 8,2kQ = 7 ,15kQ

V
Rv = R p// VT = Rp// p.r, = 7,15kQ // 90.1 8 ,4 4 n
Rv = 7,15kQ// l, 66kQ = l,35kQ.

c) R = Rc // fo = Rc // co = Rc = 6 ,8kO.
d)K = - - ^ = - ^
= -368,76
r.
18,44
e )K ^ = ^ =^
= 4 | L L = 73,04.
R , + r R ,+p.r. 7,15+1,66
Bi tp 3-4. Tnh ton lp li cho bi tp trn hnh 3-2. vi To = 50kQ.
Bi gii
Vi hai cu a, b s hon ton tng t trong bi 3-3 ngha l:
a )r,= 18,44Q
b)
Rv= ,35kQ.
c) R = Rc // ro = R, // ro = 6 ,8kQ // 50kQ = 5,98 kQ.

d)K =
- ^
r,
=-
^
= -324,3
18,44
_________ P ' ^ p '^0_______ __
(q+R(,)(Rp H-ry^-)
P -R p-F p_______
(q+R 3 XRP+Pr^)
90.7,15.50
(50+6,8X7,15 + 1,66)
Bi tp 3-5. Cho tng khuch i dng transistor nh trn hnh 3-3
Hy xc nh:
a)re
b )R v
C)R
d)
e)
70
vi mch khng c t Q
+E,, 20V
R.
2 ,2 k Q
470k
CIO P
U,
J
c,
10^F
M 20
r =40ka
0,56kQ
lF
Hnh 3-3
Bi gii
Chn transistor T loi s vi Uggo = 0,7V
a) in tr
c tnh nh sau;
J ^
=
R+(1 + 3)R.
I eo
2 0 -0 ,7
f
-------- - = 35,89|aA
470.10 + 121.0,56.10'
=(P + l)lB0=121.35,89Â = 4,34mA.
_ U j _ 26
v r =
= 5 ,9 9 0 .
4,34
EO
b) Rv = R J / rvT m VT= P(re + Re) = 120(5,99 + 560) = 67,92kQ.
Rv = 470kQ//67,92kQ.
c)R = R c / / r o - Rc = 2,2kQ.
r,
VT
67,92
R
e) K= - K ^ ,^ = -(-3,89)^ ?4^ = 104,92.
2,2
R
(^8^ Bi tp 3-6. Tnh ton lp li cho bi tp trn hnh 3-3 khi c t Q
Bi gii
Vi cu a vic tnh ton hon ton tuofng t trong bi 3-5, ngha l:
a) r, = 5,99Q
71
b) V in Re s b ngn mch i vi thnh phn xoay chiu ca tn

hiu qua t Q nn:
Ry = Rg / /
nn:
= p.g
Rv = Rb // p.e = 470kQ // 120.599Q

= 4 7 0 k Q / / 7 1 8 ,8 Q = 7 1 7 J 0 Q .
c) R = Rc = 2,2kQ.
= - ^ 4 4 ^ = -367,28
5,99
d) K =
e)K ,=
PRB
Vr
120.470.10^
= 119,82.
470.10^+718,8
Bi tp 3-7. Cho tng khuch i dng transistor nh trn hnh 3-4

(tng lp emit). Hy xc nh:
a)r,
b) Rv
c) R .
d )K ,
e)
Ki
Bi gii
Chn transistor T loi Si vi UggQ = 0,7V

a) in t- c tnh:
72
20A2^
Ti,:
R B + ( l + )Rg
220k Q + 101.3,3kO
= (1 + )ig^ = 101.20,42Â = 2,062mA

nn:
r =
= - -= 12,610
'
I eo
2 ,0 6 2
b ) R v = R b / / rv T = R b / / -re + ( 1 + P ) R e
= 220kQ // 100.12,610 + 101.3,3k

= 2 2 0 k n / / 334,56k Q = 132,72k f.
c) R,, = Re // r, = 3,3kQ // 12,61Q = 12,56Q = r,.

Uv
e ,K ,= -
r^+R
3,3.10^ + 12,61
= 0,996
= - - J 5 ^ = - 3 9 ,6 7 .
R^+Ty j
220 + 3 3 4 ,5 6
hoc c th xc nh theo biu thc khc:

Ki = -K ^
'
= -0 ,9 9 6
3,3kQ
= -4 0 ,0 6
( 8^ Bi tp 3-8. Tnh ton lp li nh bi 3-7 vi Q= 25kQ, xem hnh 3-4.

Bi gii
a) Vic tnh ton i vi T(. ging nh trong bi 3-7 nn:
= 12,61Q.
b) V To coQ hay To < lOR nn Tvt c tnh nh sau:

r = .r. +
Rv = R
//
l+ e
Q
Tvt =
^ I00.12.6in +
2 2 0 k 0 //
i + 3,3k
25kQ
295,7k f
295,7k Q = 1 2 6 , 15 k f.
c)R = RE//re=12,56Q.
(1 + ) ^
d)
1 + ^
ro
( 10 0 + 1 )
= -------- - 1 M
l+n i
25
I = 0,996.
73
e) K= - K ^ ^ = -0,996
Bi tp 3-9. Cho
tng khuch i
dng transistor mc
BC nh trn hnh
3-5. Hy xc nh:
126,15kQ
= -38,07.
3,3kQ
c,
t1^
1 0 ^F 1 ' ^ V l J t,- lOîF
K ^ 5 kQ
MkQ
a)r,
"Eee
fEcc
b)Rv
C)R
a = 0,98;ro= IMQ
d) K,
Hnh 3-5
e) Ki
Bi gii
Chn transistor T loi Si vi UggQ = 0,7V
IkQ
nn r , = i = ^
= 20 Q .
EO
b) Tr khng vo khi mc BC s l:
Rv = R e / / Te = IkQ/ / 20Q = 19,61Q.
c) R,, = R e // ro = Rc // IMQ = Rg = 5kQ.
d) K
K, -
_ 5.10^ = 250
20
e) Ki= i i - = - ^ = - ^ = - a = -0,98 = - l
L,
L,
L
Bi tp 3-10. Qio tng khuch i dng transistor nh trn hnh 3 -6 . Hy

xc nh:
a)r.
74
b) Rv
+ E 9V
c) R
2 ,7 k Q
d) K ,
R ,1 8 0 k Q
e) K
I,
Bi gii
c, lOîF
Chn transistor loi Si

v U3,o
U
QIO^F
R.,
Rra
= 0,7V .
a) T:
p=200
r=ooQ
Hnh 3-6
9 V -0 ,7 V
= ------ ----------------- = 1l,53|.iA
^BO ~
Rg+Rc
180kQ + 200 .2 ,7kQ
Lo = (1 + P)Ibo = (1 + 2 0 0)11 ,53|aA = 2,32m A
v
EO
2,32
11,21
b)
1
Rb
200
= 560,5Q
, 2,7
180
c) R,, = Rc // ro // Rb vi o > lORc th

R = Rc // R b v vi Rg Rc ta c;
K
= Rc-
y ta tnh c;
R = R c // R
= 2 , 7 k Q // 1 8 0 k Q = 2 , 6 6 k Q .
d) Ky =
e) K.=
11,21
= -240,86
PR,
200.180
Rg+pRc
180 + 200.2,7
= 50.
90 ) Bi tp 3-11. Cho tng khuch i dng transistor nh trn hnh 3-7. Hy
xc nh:
a) Rv
b) R
75
c)
+E
d) K;
u ra
Bi gii
a) Tr khng vo ca tng
c
xc nh
theo biu thc:
h,,= 1 2 0
Rv = R B / / h e = 330kQ//
l,175kQ = l,171kQ.
h,^=l,!75kr
h22e=20jiAA^
b) Tr khng ra ca tng
c xc nh theo biu thc:
1
R .=
Hnh 3-7
7/R^ = r //R^= 50kQ // 2,7kQ = 2,56kQ =: R,
'22e
y:
= 50kQ
20
'22e
c) H s khuch i in p ca tng s l:
K , . J ! L Z ^
-262,34
1,171
l i e
d) H s khuch i dng in s l;
K ,= * -= I> j,.= 1 2 0 .
Bi tp 3-12. Cho
tng khuch i dng
transistor trng nh
trn hnh 3-8. Hy
xc nh:
20V
2kn 5R ,
D
G
Up=-8V
Rv c,
a)gm
b)r,
c)
U.
gd=40fiS
2 V
Ry
Hnh 3-8
76
gso=-2V
Ij^=5,625mA
d) R .
e )K ,
Bi gii
a) T phng trnh Shockley i vi transistor trng loi J-FET ta c:
2_
Sm
2.10mA
= 2,5mS
8V
U GS _
-2
) = 2,5m S(l ^) = l, 88mS
U
-8
Bm
_^
= 25kQ
''d= =
40.10"*
d
b)
c) Ry = R(3 / /
Tyj =
Rq / /
co
R-G I M O
d) R = Ro // Td = 2 kQ // 25kQ = 1 ,85kO
e) Ku = -gl(Ro // r j = -l,88mS.l,85kO = -3,48.
(^92^ Bi tp 3-13. Cho tng
khuch i lp dng J-FET
nh trn hnh 3-9 v bit
thm:
o s o = - 2 , 86 V;
Up = -4V;
16mA;
Hy xc nh:
Idss =
i
'E dd^V
0,05^F
n ....-.. i f ----^
Uv
, ^ Iivm
>
R,< >
=4,56mA;
= 2 5 |^s.
^2
2 ,2kQ 3
ra
a)gm
b)r,
c)
aOSMF
Hnh 3-9
Rv
d) R
Bi gii
21
a) g =
' Om
-J
tn
2.16mA
= 8mS
4V
mo^^
= 8mS(l
-4
= 2,28raS
77
1
= 40kQ
b) 1;,= =
gd 25îS
c)
Rv
Ro
//
Tvt
= R g / / 00 =
IM Q
1
d) R = r, // R, // = 40kQ // 2,2kQ //
= 362 ,5 2 0
2,28mS
gm
@
Bi tp 3-14. Cho tng

khuch i dng D-MOSPET
(MOSPET loi ngho) nh
n hnh 3-10 v cho bit
thm:
Uoso=0,35V;
Iqo = 7,6m A ; Idss = 6 mA;
p = -3V; g, =
OiS. Hy
xc nh;
a)gm
Hnh 3-10
b)r,
c)
V s tcfng ng ca tng
d)Rv
e)
R.
f)Ku.
Bi gii
a ) g = ^ = - ^ ^ = 4mS
3V
u,
g . = g . o a - ^ ) = 4(l
0,35
) = 4,046mS
-3
b)fd= = . - ^ = 100 kO.

gd
c)
S tofng ng ca tng c v nh trn hnh 3 -1 1 di y.
d) Rv = R, // R, // rvT = R, // R2 //
= Rj // R, = lOMQ // 1lOMQ = 9,17MQ.
78
e) R = r, // Rd = (100 // l, 8 )kQ = 1,77kQ

f) Ku = -g.RD = -4,046mS.l,8 = -7,28.
G
-----Uv
llO M fi
R
lOMQ
m
c D
Sm ^GS
lOOkQ
D
l,8kn
"
Hinh 3-11
( 9^
Bi tp 3-15. Qio mch khu&h i dng transistor E-MOSFET nh trn

hnh 3-12.
+Edd12 V
R
2kQ
i; = 6 mA
R.ÎOMO
U, c,
Rra
1 ^F
R,
Hnh 3-12
u;=8V
Ut=3V
gd = 20iS
(0,24.10-'AA^')
k = 0,24.10'AAÛcso = 6,4V
Itx) = 2,75mA
Hy xc nh:
a) gm
b)r,
c) Ry
d) R.,
e) KuBi gii
a) g, = 2k(U.so-UT) = 2.0,24.10"^(6,4-3) = l,63mS.
b) r,. = =
gd
= 50kQ
20|aS
79
R c+ r,//R p
10Mf + 50kQ//2kQ
= 2,42MQ
~ 1+ L ( ./ / R d) ~ l + l,63mS(50kQ//2kQ)
Nu khng tnh n nh hng ca
10
;g______
l + gR^
th:
= 2,53MQ
1+ 1,63.2
d) R,, = Rc // r, H Rd = lOMQ // 50kQ // 2kQ = 1,92kQ.

Khi rî > lORp th tr khng ra c th c tnh:
R = R o //R o = RD = 2kQ
e) Ku = -g^.Ro = -1,63mS.2 = -3,26.

Khi b qua nh hng ca
vi r<j > lORp.
Khi tnh n r th:

Ku = -g,(Rc // ra // Rd) = -1,6 ms( 1OMQ // 50kQ // 2kQ) = -3,21.
( 9^ Bi tp 3-16. Qo tng
khuch i dng J-FET nh
trn hnh 3-13. Hy xc
nh in tr ti mt chiu
Rp ca tng vd h s
khuch i in p Ku = 10.
UoD 30V
R
II
T
Rg > lOMn
Bi gii
Ip55 = 1OllA
Up = -4V
g, = 20tiS
Vi Rs = O trn s
hnh 3-13 ca u bi ta c
u Q5 = o v v iu c ngha l:
Hnh 3-13
Ku = -gn,Rn. = -gm Rra = -gmCRo // r<i) = -gm (Rd // Td)

T ta tnh c:
-gm =
2 I 0SS _ 2.10mA
Up
v ta c; Ky = -10 = -SmSRp // r^)

10
= 2kQ
nn; Rp // =
5mS
80
4V
= 5mS
Mt khc ta c:
1
1
= 50kf
rd= =
g. 20 . 10 -^
Khi : Rd // r, = Rd // 50kQ = 2kQ

RoSOkQ
R^+SOkQ
RoSOkQ = 2(Rd + 50)kQ
Vy Rj) = 2,08kQ v chn in tr R theo tiu chun s l Rjj = 2kQ.
(% ) Bi tp 3-17. Cho mch khuch i dng J-FET nh trn hnh 3-14.
Hy xc nh in tr Rj) v Rs vi Ku = 8 v Uqs_ = Up = - I V . Bit
thm: Idss = lOmA; Up = -4V; gj = 20|J,S.
^DSS* mA
U p = -4 V
Ga = 20^lS
Hnh 3-14
Bi gii
T
- c;
'
Ta
_ 2I dss _ 2.10mA
- = 5mS
U,
v g = g ( l - ^ ^ ) = 5 m s ( l - ^ ) = 3,75mS
mt khc: Ku = -g(RD // r<j)
-8 = -3,75mS(Ro// r,)
6- 250BTKTNT. A
81
nn
R d // ra = Rd // = Ri, / / - ^ = R d //50kQ = 2,13kQ

gd
20|aS
T ta xc nh c Ro = 2,2kQ (ng theo tiu chun).

xc nh in tr Rs c th xut pht t biu thc;
'^GSO ~^DO^S
^DO ^Dss(^
Vy Rs =
IDO
GSO \ 2 _
= lOmA
Up
^
5,625.10
-4
= 5,625mA
= 177,80
Chn theo bng in tr tiu chun Rs = 180Q.

{^9^ Bi tp 3-18. Qio tng khuch i dng J-FET nh trn hnh 3-14 (xem
s liu bi tp 3-17). Hy xc nh gi tr R|5, Rs khi khng c t Q .
Bi gii
Khi khng c t Cs trn mch, cc i lng tnh ton cho ch mt
chiu ca tng khng c g thay i ngha l: QSO = - I V ; Ij3 = 5,625iiA;
Rs = 180f! (nh trong bi 3-17).
Biu thc tnh h s khuch i in p Kjj s l:
"
8 =
m^D
l + Sn,Rs
- 3, 75 mS.Rj3
l + 3,75.10"^180
_ 3,75mS.Rp
1+0,675
t tnh c Rq s l:
13 4
R ^ = - - = 3,573kQ
3,75mS
Chn in tr Rp theo tiu chun l Rp = 3,6kQ.
82
6- 250BTKTINTL
(^98^ Bi tp 3-19. Cho b khuch i in t nh trn hnh 3-15. Hy xc nh

K^; Ry; Rn.; u^; u vi U gso= -1 ,9 V ; Ioo=2,8m A v R, = lOkQ.
Ipss = lOmA; Up = -4V; T v T2 cng loi v c cng cc tham s.
ra
Hnh 3-15
Bi gii
_
m o
U
m
Sm o^^
Ku. = Ku, =
2.10mA
= 5mS
4V
) = 5mS 1
Up
=
-1>9
= 2,6mS
4 J
-Ri = -gRs = -2,6mS.2,4kQ = 6,2

-
H s khuch i Ku s l:
K ,= K ,,.K ^ ,^ = (-6 ,2 )(-6 ,2 ) = 38,4
in p ra s l:
u = Ky.Uv = 38,4. lOmV = 384mV
Tr khng vo ca b khuch i l:
Ry = Rg = R2 3,3MQ
Tr khng ra ca b khuch i l;
83
R , = R5 =
= 2,4kD.
Khi mc ti R, = lOkQ, in p ra trn ti s l:
u, = u =i^384mV =310mV
R+R, 2,4+10
( 9^ Bi tp 3-20. Cho b khuch i in t dng BJT nh trn hnh 3-16
vi Ub = 4,7V; Ue = 4V; Uc = 1V; Ie = 4mA. Hy xc nh: K^; u;
Rv; rI v u, khi mc ti R, = 1OkO.
15kQ
q 10nF
P=20
10)iF
h-
Uv c,
25îV
R7 > 2 ,2 kO
:R,2,2ka *^5
C , 1 0 |iF
p=200
R < 4 J ^
4,7kn
1
^6
20mF
Hnh 3-16
Bi gii
Trc tin ta xc nh in tr Tg
26mV = ^26 = 6,5Q

H s khuch i n p tng 1:
r. _
*û, ~
R _R c(//R 4//R 5//P -r.)
Te
Te
2,2kQ //(15kQ//4 ,7kQ//200.6,5Q
6,5Q
y
84
R ,, = R 3 //(R ,//R ,//p .r J
= -102,3
+E,, 20V
H s khuch i
.
s l:
= _ ^ =_ ^ =_
Ku = Ku,
= _ 2 : ^ ._ 3 3 8 ,4 6
6,5
= (-102,3){-338,46) = 34624
u = Kij.Uv = 34624.25îV = 0,866V

Tr khng vo ca b khuch i l:
Rv = R, // R, // pr, = 4,7kQ // 15kQ // 200.6,50 = 953.6Q
Tr khng ra:
Rc ^6 ~ 2 ,2 kQ.
Khi mc R, = lOkQ in p ra trn ti s l:
u = ^ U = 1 ^ 0 .8 6 6 V = 0.71V
> 2 ,4 k n
^3
0 ,0 5 ^ F
4,7kQ
4=.
'5
100fxF
Hnh 3-17
Bi gii
H s khuch i ca tng th nht:
85
Ku. =
//R v ,) = -2,6m S(2,4kQ //953,6D) = -1,77
H s khuch i K s l:
K^^=KK = (-l,7 7 )(-3 3 8 ,46) = 599,1
in p ra u = K^.Uv = 5 9 9 ,l.lm V = 0,6V
Tr khng vo Rv = Rq = 3,3MQ
Tr khng ra R,, = Rc = 2,2kQ = R5.
(10 ^ Bi tp 3-22. Cho tng khuch i cascode nh trn hnh 3-18. Hy
xc nh Ku ca tng vi
= 4 ,9 V ; U 3 = 10,8V ;
!(, = Ic = 3,8mA = 1^ = Ig; P| = p2 = 200; T = T2 = T (ging nhau).
p, = p, = 200
T, = T, = T
(ging nhau)
Hnh 3-18
Bi gii
26mV
26
3,8
86
= 6,8Q
Vy
K'
=K ., .K = -2 6 5 .
( 1 ^ Bi tp 3-23. Cho tng khuch i dng transistor Darlington nh n

hnh 3-19. Hy xc nh h s khuch i dng in K|.
Bi gii
Ta c th v li s tng
ng mch in nh trn hnh
3-20 di y:
_
Pd^b
8000.3,3.10
= 4112
3,3.10^+8000.390
Hnh 3-20
( 1 ^ Bi tp 3-24. Oio tng

khuch i dng transistor Darlington nh trn hnh 3-21. Hy xc
nh Rv; R; K|; Ku vi
= 3kQ .
87
Bi gii
Ry = Rg // (r^ + p,p2.Rc) = 2MQ // (3kQ + 140.180.75Q) = 974kQ.
K;=p.p2
9 1a6
Rg +Rv
= 140.180( -
t) = 3,7.10^
2.10"+974.10^
R = -!h _ = i i ^ = 0,12Q
p,p2 140.180
K = - J M ^ = _ 1 ^ 1 * ^ = 0,9984,
p,p2Rc+r
140.180.75+3000
( ^ Bi tp 3-25. Cho mch in dng J-FET

nh trn hnh 3-22 (mch to ngun dng).
Hy xc nh dng Id v u khi:
Edd18V
R,
a)R D =l,2kQ .
b)
u_
Rd = 3,3kQ.
Vd Idss = 4mA v Up = -3,5V.

Bi gii
Tmch in cho khi Uqs = ov.

Ij3 = I0SS 4m A.
a) = E dd - IdRd = 18V - 4mA.l,2kQ = 13,2V.
88
Hnh 3-22
b) u ,, = E do - I dR d = 18- 4.3 ,3 = 4,8V .
Bi tp 3-26. Cho mch in dng BJT

nh trn hnh 3-23 (mch to ngun
dng). Hy xc nh dng in I.
S.lkQ-
Bi gii
Chn transistor loi Si vi Ugg = 0,7V.
+E^
cC -20V
R,
Ta c: g =
R, 4-R 2
5,1
Hnh 3-23
(_20) = -10V
(5,1 + 5,1)
U e = U 3 - U bh = -1 0 -0 ,7 = -10,7V
= d Z z m = 4,65mA.
2
I= I , = l ^
^
R.
(1 ^
Bi tp 3-27. Cho ngun dng

dng transistor v zener nh trn
hnh 3-24. Hy xc nh dng
in I vi u , = 6,2V.
2.2kn'
l,8kQ
Bi gii
Chn
transistor
loi
Si
+E. -18V
vi
U be = 0,7V.
Hinh 3-24
Ta c:
R
(1 ^
1,8
Bi tp 3-28. Cho mch in ng transistor nh trn hnh 3-25 (mch

gomg dng). Hy xc nh dng in I.
89
Bi gii
Chn transistor T| v T2 cng loi Si.
E
Tac: 1 = 1
(1 2 -0 ,7 )
-
R
= 10,27mA.
1,1
108) Bi tp 3-29. Cho tng khuch i vi

sai dng BJT nh trn hnh 3-26. Hy
xc nh in p ra u. Vi= 20kQ ; Pi = P2 = ^5.
Bi gii
Chn transistor T| v T, loi
Si vi Ube = 0,7V.
Ta c:
E. - U
h =
R
BE
9 - 0 ,7
j = 193îA
43.10
Dng colect;
^
l
2
193|aA
= 96,5nA.
2
Hnh 3-26
T ta c Uc c tnh:
Uc = Ecc - lRc = 9 - 96,5.10 ^47.10' = 4,5V.

in tr
c tnh;
1-3
96,5.10
H s khuch i in p Ku s l;
K = ^ = ^
= 87,4
2r^ 2.269
90
Vy u s l:
u = Ku-Uv = 2.10187,4 = 1,I75V.
(1^
Bi tp 3-30. Hy xc nh h s khuch i tn hiu ng pha ca

tng khuch i vi sai dng transistor trn hnh 3-26.
Bi gii
T biu thc c bn tnh ton cho h s khuch i tn hiu ng pha

i vi tng vi sai ta xc nh c Kc nh di y:
K
^
(1^
Uv
PRc
,
75.47
r^ + 2(p + l)Rg 20 + (l + 75)2.43
Bi tp 3-31. Hy xc nh Kc ca tng vi sai cho n hnh3-27 di y:
T, &T
p, = p2 = 75
^VTl
Ta
^VT
IcC
p3 = 75
3= Re = 2 0 0 k
Bi gii
Transistor Tj kt hp vi cc linh kin mc trn mch to thnh mt
ngun dng nhm nng cao tr khng mt chiu. Rg v v th khi thay cc
gi tr vo biu thc tnh Kc ta c:
K , = ------- = 24,7. 1 0-'
^ ry^+2(l + p)RE 11 + 2.76.200
91
3.3. BI TP
Bi tp 3-32. Cho tng khuch i dng BJT mc EC nh trn hnh 3

28. Hy xc nh Rv; R; Ku, Kj
a) vi Q= 40kQ
b) vi Tq= 20kQ.
:60
Hinh 3-28
( 1 ^ Bi tp 3-33. Cho mch in dng transistor nh trn hnh 3-29. Hy
xc nh E c c sao cho Ku = -200.
( ^ Bi tp 3-34. Cho tng khuch i ng transistor nh trn hnh 3-30.

Hy xc nh r^; Ry; R; K^; K| vi:
a) Tq= 50kQ
b) ro = 25kQ.
92
+ E ^16V
R|
:3,9kn
I,
II--
- *u,
q I^ F
ra
P=100
Hinh 3-30
( 1 ^ Bi tp 3-35, Cho tng khuch i dng BJT nh trn hnh 3-31. Hy

?CCc)
Ku; K,
+Ecc20V
p=80
r.=40kQ
Hnh 3-31
Bi tp 3-36. Cho mch in dng transistor nh trn hnh 3-32. Hy

xc nh R v ; R; K^; K, v u,, khi Uy = ImV.
93
( l ^ Bi tp 3-37. Cho tng khuch i dng BJT nh trn hnh 3-33. Hy

xc nh Ib; Ic; r^; R v,
K^; K.
(1 ^
Bi tp 3-38. Cho mch khuch i dng BJT nh trn hnh 3-34. Hy

xc nh r^; Rv, Rra
K|.
+6V
-IOV
R ^6,8k Q
Iv
R ^ 4 ,7k n
^l---- *ura
R
Hnh 3-34
94
a = 0,998
( b) Bi tp 3-39. Cho mch khuch i ng BJT nh trn hnh 3-35. Hy

^
xc mh Ku; K,.
+8V
ra
-5V
Hnh 3-35
Bi tp 3-40. Cho tng khuch i dng BJT nh trn.hnh 3-36. Hy

xc nh r,; Rv; R,,; K; K;.
t E.. 12V
R ,3.9kQ
R. 220k
l.
p=120
-IIr=40k
R,
Hinh3-36
Bi tp 3-41. Cho tng khuch i dng BJT nh trn hnh 3-37. Vi

r, = lo; p = 200;
=-160; K = 19; To= )kn. Hy xc nh R K Ecc.
R.
VSAr
u.
u.
-l-
<
Hnh 3-37
95
(121^ Bi tp 3-42. Cho tng khuch i dng BJT nh trn hnh 3-38 vi
h,|^ = 180; h, = 2 ,75kQ ; h22^ = 25|S. Hy xc nh Rv;
Ky; K|; g.
^+Ecc 18V
Di
i > 68kQ
1^ 3
> 2 ,2 kf
Hnh 3-38
Bi tp 3-43. Qio tng khu&h

i dng BJT nh t-n hnh 3-39
vi
h2| = -0 ,9 9 2 ;
hh =9,45Q
;
H l10iF
yR
h,,
22,, = 1 ^Y^ .
V /
R ^l,2kQ
T 4V
Hy xc nh Rv; R; K^; K^;

a; p; r^; Tq.
lOîP
2,7kQ ^
12V
R.
Hnh 3-39
Bi tp 3-44. Cho tng

khuch i dng J-FET nh trn hnh 3-40. Hy xc nh Rv; R; Kjj
vi Idss - lOmA; Up = -4V; = 40kQ.
Edd18V
Rol.SkQ
Hnh 3-40
96
( ^ Bi tp 3>45. Cho tng khuch i dng J-FET nh trn hnh 3-41

Hy xc nh Ry; R; Ku vi
(^
= 3000|iS v gd = 50|aS.
Bi tp 3-46. Hy xc nh Rv; R; Ku ca tng khuech i dng JFET nh trn hnh 3-41 (xem bi 3-45) khi ngt t Cj ra khi mch.
( l ^ Bi tp 3-47. Cho tng khuch i dng J-FET nh trn hnh 3-42. Hy

xc nh Rv; Rn,; u vi Uy = 20mV; loss = 12mA; Up = -3V; T= lOOkQ.
ra
Bi tp 3-48. Hy xc nh Rv; R; u ca tng khuch i dng J

FET nh trn hnh 3-42 (xem bi' 3-47) khi ngt t C3 ra khi mch.
@
Bi tp 3-49. Tnh ton lp li cho bi 3-47 khi thay r., = 20kQ.
(1 ^
Bi tp 3-50. Tnh ton lp li cho bi 3-48 khi thay
7. 250BTKTINT.A
= 20kQ.
97
^ 3^ Bi tp 3-51. Cho tng khuch i mc GC dng J-FET nh trn hnh 3-43.

^
Hy xac nh Rv, R; u^; vi Uv = 0,lmV; Icss= 8mA; Up = -2,8V;
= 40ka.
ra
Hinh 3-43
Bi tp 3-52. Cho tng khuch i dng DMOSPET nh n hnh 3-44.

Hy xc nh
bit gj = 20pS; Uy = 2mV; I^ss = 8mA; Up = -3V.
41 *u
Hh
RG>10Mf
Hnh 3-44
(132 ) Bi tp 3-53. I O tng khu&h i dng D-MOSFET nh trn Knh 3-45. Hy

xc nh Rv, R; Ky. Bit = 6kQ; Icss = 12mA; p= -3,5V; Edd = 22V.
Eoo 22 V
^ o i.s k n
'ni
u.
Rq!
lOMQ'
R
100
Hnh 3-45
98
7-250BTKTINT-B
( 1 ^ Bi tp 3-54. Tnh ton lp li cho bi tp nh hnh 3-45 vi
= 25kQ.
( 1 ^ Bi tp 3-55. Cho tng khuch i dng D-MOSPET nh trn hnh 3-46.

Hy xc nh
vi Uv = 4mV; gj = 35|0,S; g = 6000|J,S.

_________ t Eoo
'DD
91NK >
n 3 <6,8kn
u." li------- ' B

R2>
15MQ f
Rs >
3.3kn>
T ^
Hnh 3-46
Bi tp 3-56. Tnh ton lp li nh bi tp 3-54 trn hnh 3-46 vi

g, = 50S;
= 3000^8.
( l ^ Bi tp 3-57. Cho tng khuch i dng E-MOSPET nh trn hnh 3-47.

Hy xc nh Rv; R; Ku vi k = 0,3.10 ^ Ut = 3V; Td= lOOkQ.
Epo 16V
Rd L
Rp 10M2 <2,2k
r-MAr -------
U v-
Hnh 3-47
( ^ Bi tp 3.58. Tnh ton lp li cho bi 3-57 (xem hnh 3-47) vi

k = 0,2.10'^ v so snh cc kt qu.
Bi tp 3-59. Hy xc nh
vi tng khuch i dng E-MOSFET
cho trn hnh 3-48. Vi Uv = 20mV; Uj = 3,5V; k = 0,3.10 ^ gd = 30îS.

99
. E^d 20V
R,
\QkQ
R 22MD
r-AAAr-
------- i H
ra
Hinh 3-48
( Bi tp 3-60. Hy xc nh u ca tng khuch i dng E-MOSPET

cho trn hnh 3-48. Bit: Uv = 4mV; Ut = 4V; 1^^^^ = i ; = 4m A ;
-
U , 3 _ = U ; s = 7 V ; g , = 2 0 ^ is .
Bi tp 3-61. Oio tng khuch i dng E-MOSPET nh trn hnh 3-49.

Hy xc nh u vi
Uv
= 0,8mV;
= 40kQ; T = 3V; k = 0,4.10 \
Bi tp 3-62. Cho mch khuch i dng JFET nh trn hnh 3-50.

Hy xc nh Rjj vi: Iqss = 8mA;
100
Up
= -2,5V; gd = 25fiS; Ku = 8.
ra
Bi tp 3-63. Cho tng khuch

i dng JFET nh trn hnh 351. Hy xc nh R v Rs- Vi
Ku
ra
l,
Ic = 12mA; Up= -3V;
= 40kQ.
Bi tp 3-64. Cho b
khuch i gm hai tng
nh trn hnh 3-52. Hy
xc nh in p ra u. Vi
I dss = 8mA; p = -4,5V.
101
Bi tp 3-65. Cho b khuch i gm hai tng nh trn hnh 3-53. Hy

xc nh h s khuch i K. VI Iss = 6mA, Up = -3V, = 150.
( ^ Bi tp 3-66. Hy xc nh Rv v R ca b khuch i cho n hnh 3-53.

( l ^ Bi tp 3-67. Cho tng khuch i Cascode nh trn hnh 3-54. Hy
xc nh h s khuch i K v in p ra u. Vi Uy = lOmV,
, = , = = 200
102
( l ^ Bi tp 3-68. Cho tng khuch i Darlington nh trn hnh 3-55. Hy

xc nh K.
( ^ Bi tp 3-69. Cho tng khuch i Darlington nh trn hnh 3-56. Hy

xc nh in p ra . Vi Pi = 160; P2 = 200.
ra
(1 ^
Bi tp 3-70. Cho mch in ng JFET nh

trn hnh 3-57. Hy xc nh dng in I vi
Ioss = 6mA;Up = -3V.
2k
Hnh 3-57
103
Bi tp 3-71. Hy xc nh dng in I cho mch in trn hnh 3-58

vi p = 100.
<
R,
4,3k
l,8kQ
+E..
-18V
ee
Hnh 3-58
104
Chng 4
MCH
KHUCH I
CNG SUT
m
w
4.1.
TM TT PHN L THUYT
Nhim v ca tng khuch i cng sut l a ra ti mt cng sut

ln theo yu cu, c th t vi chc mW n hng trm hay hng ngn w .
H s khuch i cng sut ng vai tr quan trng, cn h s khuch i
in p ch l th yu.
- Tng cng sut c th lm vic cc ch khc nhau; ch A, AB,
B hay ch c , nhng khuch i cc tn hiu iu ha thng s dng
hn c l ch A v AB (hay cn gi l ch B|).
- y l tng khuch i tn hiu ln nn buc phi lm vic on
cong ca c tuyn transistor nn s gy mo phi tuyn.
- Tng cng sut c th mc theo s ofn hay s y ko, c th
dng ngun cp in n cc hay ngun i xng c im gia trung ha.
- Hiu sut ca tng cng sut quyt nh hiu sut ca my khuch
i; vic nng cao hiu sut ngoi ngha tit kim nng lng cn lm
gim cng sut tiu tn trn v transistor di dng nhit.
- Cc tng khuch i cng
sut c phn ra: tng cfn, tng
y ko, tng c bin p ra, tng
khng bin p ra...
*
T n g cig su t m c n ti
in tr (hnh 4-1)
Hnh 4-1. Tng cng sut mc n ti in tr
khuch i cc dao ng iu ha tng ch lm vic ch A,

trong transistor lm vic trong c hai na chu k tn hiu.
105
Cng sut ra
p =
"
= Is 2^
2
= -Hsm2R
Trong U, = U c B = |v I = I
p_. , = H - k = i . = i l
ramax
2
2 2^
4
,E
*
Cng sut tiu th t ngun

Po = Ico E
Hiu sut cc i khi p -> p,ra max
n = i = -|. 100% = 25%

4IE
Thc t hiu sut cn thp hn.

in tr ti xoay chiu ti u c xc nh:
^Ct.
h.
2K
u im: tn hiu t b mo
Nhc im: cng sut ra nh, hiu sut thp.
* Tngcngsut mc nc binp ra(hnh4-2)

Bin p ra c chc nng ngn mt chiu, dn tn hiu xoay chiu ra ti
R ng thcri phi hp tr khng.
iu kin phi hp tr khng
Rra = R( =
Trong n =
w
W2
R(
h s bin p;
R - in ra ca tng khuch i;
R, - in tr ti;
R, - in tr ti quy v s cp bin p.
T suy ra
R.
n=
i
106
R.
Nu bin p ra l l tng th in tr ti xoay chiu mch ra
a)
u_
Ira -
Ico
Hinh 4-2. Tng cng sut mc n, c bin p ra
b)
- Cng sut ra cc i
ramax
- Cng sut tiu th t ngun:

Po = U,.I^ = I,E
- Hiu sut cc i:
Po
1 E.I
^100% = 50%
2 E.I
Trong thc t bin p lun c tn hao v tn ti in p d Udu nn hiu

sut cn nh hn.
Khi lm vic vi ti ti u bin in p cc i Uca, bng 2E Y ti
mang tnh in khng nn xut hin sc in ng cm ng trong cun s
cp bin p.
* T n g cng su t m c theo s y ko c bin p ra (hnh 4-3)
BA l bin p o pha;
BA l bin p ra.
Tng c th lm vic ch A hay ch B nhng thng l ch
AB vi dng tnh I,.o (1 0 100) Â.
107
+E
r"T T ~V i
:u - v v - ^ ^
uy
L
BAI
T,
Ba2
a)
Hnh 4-3. S cng sut (a) v c tuyn ra (b)
in tr ti ca mi transistor (1/2 cun s cp l W | vng) c xc nh,

R, = n'.R, Suy ra n =
w,
n = -^
w.
R
R
- Cng sut ra cc i mt nhnh
il r ;
ni max
_ I.. UcB. _ I.n E

2
Dng in trung bnh trong mt chu k ca mt nhnh (1 transistor)

1
I ...
Dng tiu th t ngun E (c hai nhnh);
- Cng sut tiu th t ngun E:

Po = I .E = -I, E
n
Hiu sut cc i ca tng
p
F.
Imax
71
= -100%=78,5%
4
108
= 2.
n
Thc t bin p c tn hao v cEm < E nn hiu sut thp hn.

Cng sut tiu tn trn colect ca mt transistor di dng nhit.
P _ p
2
Suy ra pcmax = -_2
^ P wO,4Pr;iniax
n
Kt lun:
- ch B hay AB khi Uy = 0 tng khng tiu th nng lng.
- Ngn mch ti v h mch ti khi c tn hiu vo u rt nguy him
cho transistor.
* Tg cng su t y ko m c ni tip khng hin p ra (hnh 4-4)
u.
JL
R,
R.
c,
I11I ' 1
R.: ;
R,
Hnh 4-4
mc ti trc tip khng qua bin p phi dng ngun i xng E c

im gia trung ho, cc cc + v -E khng c ni vi v my. Transistor
T|, Tt l hai nhnh ca tng cng sut, dng hai transistor khc loi dn
in, u mc theo s ti emit nn khng khuch i c in p. Tng
T, l tng kch cng sut v khuch i in p, ti xoay chiu l Rj; D| v
D, lm nhim v to thin p v n nh nhit cho T| v T,.
Tng thng lm vic ch AB. Cc tnh ton ca tng ny ging
nh xt trn.
* T n g cng su t m c theo s y ko ng t p h n cch c>
Trong trng hp khng c ngun i xng m ch c ngun n cc,

mun mc ti trc tip, khng qua bin p th phi dng t phn cch Cp
mc ni tip vi ti.
T Cp c hai chc nng: ngn thnh phn dng mt chiu qua R, v lm
ngun th cp cho T2 khi T| tt. T Cp s phng, np qua T|, T-, v R,.
109
Tng Tj v cc linh kin hp thnh ging nh s dng ngun i xng.

(1 ^
Bi tp 4-1. Cho mch khuch i cng sut nh hnh 4-5 a

Bit:
E =12V
Rc = 20Q
R, = 2kQ
U be =
0,5V;
= 50
Dng in vo c bin Iv = I b = 5mA.

a) Xc nh im lm vic tnh 0 v
Hnh 4-5a
ng ti mt chiu, xoay chiu.

b) Xc nh dng Ic ng vi ly = 5mA.
Bi gii
a) Dng tnh Ibo c xc nh
E -U e,o
R,
1 2 -0 ,5
_____
= 5,75mA
2.10'
Dng tnh colect

Icx) = PIbo = 50.5,75 = 287,5mA
- in
I,(m
A)
^R=R~
1\ 287,5
....
V/ ..... x, ^
6,25
U(V)
ap U (^ = 12-IqqRc =
12 - 287,5. lOMO = 12 - 5,75 = 6,25V

im lm vic tnh
c to
Hnh 4-5b
o (6.25V; 287,5mA).
- v ng ti mt chiu v xoay G h iu ( y
= R_ = Rc) cn xc
nh thm mt im na ngoi im o . Bit phng trnh ng ti
U,, = E -IcR c
Cho Ic = 0
u = UcE = E = 12V. Ni im o vi im 12V trn trc
honh ta c ng ti mt chiu.
Trong trng hp ny v R = R. nn ng ti mt chiu v xoay chiu
trng vi nhau.
110
b) Khi dng in vo Ig bin thin 5mA th dng in ra s bin thin
a) Hiu sut ca tng.

b) Cng sut tiu tn trn colect ca transistor.
Bi gii
a) xc nh hiu sut, cn xc nh cng sut ra ti v cng sut tiu th.
_
("250
- Cng sut ra p = ^ R =
.20 = 0,625W
- Cng sut tiu th t ngun

Po = E.I, = 12.287,5.10' = 3,45W
Hiu sut T = ^ ^ 1 0 0 % = 18,1 %
' 3,45
b) Cng sut tiu tn trn colect transistor
Pc = Po - Pra = 3,45 - 0,625 = 2,825W
( Q ) Bi tp 4-3. lp li bi 4-1.
Nu gim bin dng tn hiu vo cn 3mA
Hy xc nh:
a) Cng sut ra.
b) Hiu sut
ca tng.
c) Cng sut tiu tn trn colect.

d) Cho nhn xt.
Bi gii
a) Xc nh cng sut ra
- Dng in ra
= I g .p = 3.50 = 150mA
- Cng sut ra
15010"^y
= -^ R . = ^
^ 20 = 0,225W
111
- Cng sut tiu th, khng i

P= L,,n= 12. 2 8 7 ,5 .1 0 ' = 3 ,45 w
b) liu su ca tn
n=
p .
. 0 225
100% = - - - 100% - 6,52%
K
3,45
c) Cng su tiu tn trn colect P(.

= p -
= 3,45 - 0,225 = 3,225W
d) Nhn xt:
- Cns sut tiu th t ngun l c nh, khng ph thucvo mc ln
hiu vo, vl tng lm vic ch A.
- Bin tn hiu vo gim th hiu sut gim v cng sut tiu tn P(~
tng ln.
( 1 ^ Bi tp 4-4. Cho mch khuch i cng sut c bin p ra nh hnh 4-2.

Bit dng in tnh l|i = 3iiA; = 20; H = 12V; Un|,,) = 0.6V, bin
dnt din vo |j, 4mA.
St p trn R,v : R,.; = 1V; R, = 8Q; n =
=4 .
a) Xc nh in tr R| v R,.
b) Xc nh dim lrn vic tnh, ng ti mt chiu v xoay chiu.
c) Xc dinh dng ^, v in p u^,.

Bi gii
a) Xc nh tr s in tr R| v
R,
- u, = u,,; + U,,o = 1.0 + 0,6 = 1 ,6 V

U,, - I,.R,
- U |^ | = ( I , +
R, '
=% 4I 4 . 5 . 1 0 '
I q ) R = E - U ^2
l, + I,
12
l,
51.,
5.5.10
V- s o n
b) Xc nh im lm vic tnh
Nu coi bin p l l tng th C E O = E = 12V
Ico lo 20.50 = lOOmA
To im lm vic tnh o (12V; lOOmA)
in tr ti quy v s cp bin p
R, = n-R, = 4 l8 = 1 2 8 n
T im trn trc honh c in p Uc0 = 12V cng thm mt on
in p bng
= 100.10'll28 = 12,8 V, c im B k ng thng
qua B v o ta c ng ti xoay chiu.
T th xc nh, ng vi dng In, bin thin 4mA.
U
c e
U c E . i n
22V
U a . =
Icmax= 180 mA
Icmin = 2,0 tA.
Bin dng
1 8 0 -2
cc i I
= 89mA
Bin in p ra cc i
U
8- 250BTKTINT-A
ICEmax
^CEmn
2 2 -3
= 9,5V
113
( ^ B tp 4-5. lp li bi 4-4
a) Xc nh cng sut ra ti.
b) Xc nh cng sut tiu th.
c) Xc nh hiu sut ca tng.
d) Cng sut tiu tn trn transistor.
B gii
a) in p hiu dng trn cun s cp bin p:
I
TI
=-^ =
72
2 y2
79 '
= 6,74 V
iS
- Gi tr hiu ng in p bn th cp bin p tc l trn ti R,:

U ,= U = A 7 4 = 1.685V
- Cng sut ra ti:
p = ^ = l^ = 0 ,3 5 5 W
R.
8
b) Cng sut tiu th t ngun:
Po = E.I, = 12V.100.10' = 1,2W
c) Hiu sut ca tng:
p ___ 0 355
T1= -^100% =
Po
1,2
= 29,58%
d) Cng sut tiu tn n v transistor Pc

Pc = Po - Pra = 1,2 - 0,355 = 0,845W
Bi tp 4-6. lp li bi 4-4. Nhng gim in tr ti xung cn
4 0 . Hy xc nh cng sut ra, hiu sut v cng sut tiu tn PcBi gii
a)
Nu R = 4Q, th R, = n^.R, = 4^.4 = 64Q, to im B trn trc
honh by gi l 12V + 100.10164 = 18,4V. T th (hnh 4-6) ng vi
Ib = 4mA so vi Igo ta xc nh c
8 - 250BTKTOINT - B
U., = U ce= 18V

. = c h m = U, = 3V
Icmin = 2mA
Q _=180m A
Bin in p ra khng mo
n
- UcB.a.-UcB.n_ 1 8 -3
CEm
2
2
- in p hiu dng bn s cp bin p

. = ^ = ^ = 5,32V
n/2
>/2
- in p hiu dng bn th cp bin p
1 5 32
U ,= U ^ .- = ^
= 1,33V
'
""*4
- Cng sut ra
P , = ^ = !4 )! = o,442W
" R
4
Cng sut tiu th
Po = I,.E = 100.10M 2 = 1,2W
b)
p
0 442
Hiu sut TI = ^ .1 0 0 % = ^ ^ ^ .100% = 36,83%
Po
1,2
c)Cng sut tiu tn

Pc = Po-p =
1,2-0,442 = 0,758 w
Kt lun: Khi in tr ti gim cng sut ra tng ln.

( 1 ^ Bi tp 4-7. Cho tng khuch i cng sut (KCS) mc cfn lm vic
ch A nh hnh 4-7.
Hy xc nh cng sut ra (P) hiu sut ca tng (i) vi bin dng
baz Ib = lOmA; p = 25; Ic(B) = ^
20
= = OOOmA
20
Ecc = ce(A) = 20V ;
U be = 0,7 V
115
" E
20V
20Q
+Ic
T(Si)
a)
Hnh 4-7
Bi gii
Ta im Q c xc nh theo phcttig trnh cmg ti mt chiu (R_)
R,
1.10'
= .Ibo = 25.19,3mA = 0,48 A

Uceo = Ecc - IcoRc = 20 - 0,48. 20 = 10,4V
- To hai im A v B trn trc honh v trc tung tofng ng s l:

20V v lOOOmA.
- Bin dng ra (dng colect) s l:
Icm = Ibm- = lOmA.25 = 250mA
p
P o
= 2 5 0 ] 0 2 20 = 0,625w
2
E c c - I c o
Po
2 0 . 0 , 4 8
9 ,
9 ,6
( l ^ Bi tp 4-8. Cho tng khuch i cng sut ghp bin p nh hn 4-8.
116
Hy xc nh cng sut ra trn ti.

E
lO V
TA)
R.
400-
w,5 ^R. 8f
4 m A
12mA
lOmA
l_ = 2 2 5 m A
8m A
2oaAIc
u.
l^.^=25mA
6m A
1001-,
4m A
H--2mA-j^
10
15
po
25
UJV)
Uc.,=18.3V
b)
a)
Hnh 4-8
w
3
Vi cc s liu cho thm: Ibo = 6mA; I(^ = 4mA; n = = = 3
W2 1
Bi gii
Dng ng ti mt chiu R_ nh trn hnh 4-8b, ta c c:
= lOV
I,,= 140mA
in tr ti phn nh t th cp v s cp ca bin p l: R, = n^.R, =
3 \s = 7 2 0
Bin dng colect c xc nh:
I
=- = i =i39m A
R , 72
To im B trn trc tung s l:

rc..x = Ico + I c . =
140+ 139 = 279mA
Ni im Q v B ta s c ng ti xoay chiu R. ct trc honh ti

im c ,, = 20V l im A .
Trn hnh 4-8b vi bin dng
= 4mA ng ti R ct cc ng
c tuyn ra tomg ng vi
= I| + Ibn, = 6 + 4 = lOmA
v Ibi = Ib - b = 6 - 4 = 2mA
r
Khi ta c cc gi tr in p u v Ic tng ng
117
Ui=l,7V
Ui = 25mA
u _ = 18,3V u , = 255mA
nh trn hnh v 4-8b.
Cng sut ra s l:
p _ ^^cemax ^cemn ^^^ciTiax ^cmin^
8
( 1 8 , 3 - 1 , 7 ) ( 2 5 5 . 1 Q - ^ - 2 5 . 1 0 - ^ )
8
(15^ Bi tp 4-9. Cho tng khuch i cng sut nh hnh 4-8 da trn kt
qu bi tp 4-8.
Hy xc nh Pq; Pc v t|.
Bi gii
p=
= 10V.140.10' = 1,4 w
p= Po- p= 1,4 - 0,477 = 0,92w
p __
0 477
11 = - ^ 100% =
100% = 34,1%
Po
( i Bi tp 4-10. Cho b KCS lm vic ch B vi

^
R, = 16Q, E = 30V.
= 20V,
Hy xc nh Pq, Pr "n.
Bi gii
Vi bin in p ra 20V v ti 16Q ta ti c bin dng ti s l:
I,m= U
= ^
= ^ = U 5A .
lo
Dng tiu th trung bnh l:

I.b = % = - = r ( U 5 ) = 0,796A
71
71
Cng sut tiu th t ngun cung cp s l

Po =
Cng sut ra ti l
Ecc.I,b
Ui
= 30.0,796 = 23,9
(2 0 f
" 2R. 2.16

118
Hiu sut ca tng l:

TI =
^ 100% = 100% = 52,3%

Po
23,9
(l6^ Bi tp 4-11. Cho b KCS dng transistor lm vic ch B mc y

ko nh hnh 4-9 (gi thit
transistor l tng). Hy xc nh
cng sut tiu tn Pc trn mi
-ansistor, p, Po v . Vi Uv
hiu dng (rms) l 12V = vnroBi gii
Bin in p vo l:
u., = >/2.U_ = n/2.12V = 17V

vm
vrms
Vi tng KCS l tng ta coi

ng bng
(khng c tn hao trn tip gip baz-emit).
Cng sut ra s !:
pra ^
17^
2R.
= 36,125W
2.4
Bin dng ti l;
U _ 17
I. = l.n,= - ^ = J = 4.25A
Dng trung bnh c tnh
71
Cng sut tiu th t ngun cung cp l:

p,b =
= 25.2,71 = 67,75W
Cng sut tiu tn trn mi transistor l

67,75-36,125
= 15,8W
119
Hiu sut ] l:
^
100% =
tb
67,75
1 0 0 % = 5 3 ,3 %
+E,, 24V
162) Bi tp 4-12. Cho tng KCS

lm vic ch A nh hnh
4-10. Hy xc nh dng tnh I(.o
v cng sut tiu th t ngun
cung cp PoBi gii
"
Ecc
________
R _+R _
Ecc______
R ,+ R ,+ R ,
E = 24 W
R ,
I-.
~ X r r ^
t 'jR ,8 n
24
= = 1,454A
2R^+R^ 2.8+ 0,5
( y R _ = R ,; R - = R , + R ,)
Po =
24.1,454= 34,896w
(16^ Bi tp 4-13. Cho tng KCS

nK hnh 4-11. Hy xc nh h s
bin p n vi p= 9w?
Hnh 4-11
Bi gii
U:
2R,
= 9 W , t ta xc nh c bin in p ra trn ti ,
U,.=VP.2R, = 7 ^
= 12 V
Vi gii thit r, =
(bin p c cun s cp l tng) nn bin
in p ra phn nh v s cp u ng bng u 0 v bng E.
, = U = E,, = 24V
u .
120
12
( ^ Bi tp 4-14. Qio tng KCS lm vic ch A nh hnh 4-11 (xenn bi

tp 4-13). Hy xc nh cng sut tiu tn trn colectQa transistor T.
Bi gii
E
Ico =
R. + R_
R ',+0
24
n^R,
2\8
Po = E,Ao = 24.0,75 = 18W

Vy p, = Po - p = 18 - 9 = 9 W
( l ^ Bi tp 4-15. Cho mch khuch i cng sut nh hnh 4-12. Bit hai
transistor l l tng
= 0, I^ = o, E = 20V. Bin p ra l l tng,
h s bin p n = 2.
R, = 8Q; R2= lOOQ.
a) Xc nh tr s in tr R|
tng lm vic ch AB
YT
/\ \ r
VI U
beo
= 0 .4 V .
b) Tnh dng in cc i qua

transistor.
Hinh 4-12
c) Tnh hiu sut ca tng.

d) Cng sut tiu tn trn colect.
Bi gii
a) Thin p BEO c xc nh theo biu thc:
Suy ra R, =
UBEO
- R, =
^ 0 4^
- 00 = 4,9kf
Bin p l tng nn UgEo = E = 20V v dng tnh 1^0 = ( )mA

b) Dng colect cc i
E
E
20
,^
= ^T= , - - =
= 1,25A
R , n".R, 2-.8
121
- Cng sut ra cc i
__
CEm cmax __
20.1,25
= 12,5W
- Cng sut tiu th t ngun

P=E.L = E .- .I = 2 0 .1,25 = ]5,92W
"
71
3,14
c) Hiu sut cc i ca tng:
Tln,.,x = .100% = - ^ . 1 0 0 % = 78,5%
15,92
d) Cng sut tiu tn:
= 15,92 - 12,5 = 3,42 w
= p -
Bi tp 4-16. lp li bi 4-15. Nu gi thit tng lm vic ch

A vi thin p U g E o = 1,2V. Hy xc nh in tr R|.
Bi gii
ch A c ha transistor T| v T2 lm vic ng thi, thin p t
voT, vT^l 1,2V
U
b e o
= 1 , 2 V
Suy ra R,
U beo
(1^
1,2
Bi tp 4-17. Cho tng

khuch i cng sut nh hnh
4-13. Hai transistor T| v T2 c
= 0,5V; I, = ImA. Tng
lm vic ch AB. Cng
sut ,ra p, = 25 W; in tr ti
R, = 8Q.
a) Xc nh dng in cc i
qua transistor.
b) in p ngun cn thit.
122
R.
.E
R, +Rj
= l,566kQ
Bi gii
a) T biu thc
= R, (ong
2P
Suy ra I,^, - I,
b) T biu thc
'2.25
2R,
l bin dng in ra mt nhiih)
= 2,5A
(U,^ l bin in p ra cc i)
in p U,,, = u,. + U,, = ^P.2R, + ,, = V2 5 .2.8 + 0,5 = 20,5V

in p ngun E = 2(P,,.2R, +
) = 2 ( 7 2 5 .2.8 + 0 , 5 ) = 41V
E 20,5V.
(1^
Bi tp 4-18. Qio mch khuch i cng sut nh hnh 4-14. Bit R, = 8Q;
p, = 5
w.
H s khuch i T, v % p
UÎ = 0,5 V; Tng lm vic ch B| c Bg()|
= 50
U BE02 = 0,2V
a) Tnh dng cc i qua transistor.

b)
in p U c e o -
c) in p ngun cung cp.

d) Cng sut ra cc i.
Bi gii
a) T biu thc p,^, = -^ .R ,
Suy ra dng cc i
=
V R.
b) in p Uceo = ^/2P,,,R. +
= ^ / 5 I + 0,5 = 9,44V
c) in p ngun cung cp
E=2(
^ 2 1 ^
) = 2+
0 , 5 ) = 18,88 V
123
d) Cng sut ra cc i
(1 ^
rama*
---- L- = 5W
2 .R^
2.8
Bi tp 4-19. lp li bi 4-18. Nu bit dng colect ca transistor T,

Icx)3 == 1.5Iboi = l, 5 Ig02 (Ibom Ibo-> dng tnh baz ca transistor T v Tj)
a) Hy xc nh in tr Rj v in tr nhit R,.
b) Xc nh cng sut tiu th.
c) Xc nh hiu sut ca tng.
Bi gii
- Dng tnh qua transistor Tj
leo, = 1,5I = 1 , 5 ^ = 1 , 3 - ! ^ = 33,5mA
Pmin
a) in tr Rj c xc nh
E
2
Ic o ,
*co
Ic o .
= Ô T
= '' e i n -3 = 281,8
2 I , 2.33,5.10'
- in tr nhit Rt
2U
2.0,2
= .- ....E. =
Ico3
1 ,9 Q
1 2 f
33,5.10^
b) Cng sut tiu th t ngun

p. = -l ,..U c B 0 = r ^ l . ' 8 . 9 , 4 4 = 7,095W
K
J ,1 4
c) Hiu sut cc i ca tng
X]
p
4 99
= l i = -Z1Z_. 100% = 70,33%
Po 7,095
( l ^ Bi tp 4-20. bi lp li bi 4-18. Nu thay

bng hai it ging
nhau mc ni tip thun chiu. Gi s dng qua Tj bng 1,2 Igoi, Ibo->Hy chn hai it; dng qua 3 in tr Rj.
T
124
Bi gii
a) Xc nh dng qua Tj
Ia> 5 = 1 . 2 1 , , = 1 . 2 - ! ^ = 1
. 2
= 2 6 .8 m A
b) in tr R.,;
R
F.
Q 44
= - 5 - = _ Z l !!_ = 352,20
I,
I, 26,8.10-
c) in tr thun ca hai it
=
f e o i K|BEil. = _ _ M _ = 14,920
Ieo3
26,8.10
C03
Chn hai it hon ton ging nhau c in tr thun
14 Q2
R
. = R
d2
= -
= 7 , 4 6 0 .
( l ^ Bi tp 4-21. Cho mch khuch i cng sut nh hnh 4 - 1 3 . Bit

E=25V
R, = 4 Q
Gi s in p vo c gi tr hiu dng l lOV.
a) Tnh cng sut ra ti.
b) Tnh cng sut tiu th t ngun.
c) Tnh hiu sut ca tng.
d) Tnh cng sut tiu tn trn mi transistor.
Bi gii
a) Gi tr bin ca in p vo
U . = '/2 U ., = ^ y 2 .I 0 = 1 4 ,lV
T| v T, mc theo s ti emit nn in p ra coi nh bng in p vo
U .< P )= 1 4 ,1 V
Cng sut ra ti
125
C ^ ( H ) 1 ,2 4 ,8 5 W
2R,
2.4
Bin dng in ti
I
= ^ <p> = = 3 525A
b) Xc nh cng sut tiu th t ngun

- Dng trung bnh I,b trong c chu k
Cng sut tiu th
Po = I,b.E = 2,245.25 = 56,125 w

c) Hiu sut ca tng
p
24 85
ri = ^ 100% =
100% = 44,17%
p
56,25
d) Cng sut tiu tn trn colect ca mi transistor
p _ p.-p _ 56.125-24.85 _
2
( l ^ Bi tp 422. Mt tng khuch di khi cha c hi tip m c h s

khuch i in p k(dB) = 40dB, v in p vo Uy = lOOmV. tng
n nh v gim mo, a vo mch hi tip m in p c h s
hi tip k(,t = ^ .
^
200
a) Tnh h s khuch i khi c hi tip.
b) in p ra khi cha c hi tip v khi c hi tip.
c) in p hi tip.
Bi gii
) H s khuch i khi cha c hi tip kjB = 40 B. Suy ra K = 100
- H s khuch i khi c hi tip m:
126
100
' + K-K.
, + iooJ-
200
b) in p ra khi cha c hi tip

u = K.v = 66,6.100.10-' = 6,66V
c) in p hi tip
u = K^-U =
10= 0,05V = 50mV
Bi tp 4-23. Mt tng khuch i cng sut sau khi lp rp o c

tno phi tuyn l 6%.
gim mo phi tuyn xung cn 1% ngi ta mc vo mt mch hi
tip m.
a) Hy tnh su hi tip.
b) Tnh h s khuch i khi c hi tip. Nu gi thit khi cha c hi
p v = 0,5 V th u = lOV.
Bi gii
a) Tnh su hi tip g
T biu tc y ' = ----------- , frong . mo phi tuyh khi cha c hi tip
y: mo phi tuyn sau khichi tip m.
_____
Suy ra su hi tip g =1+ KK,, = -L = = 6
y'
K.Kh, = 6-l = 5
5
bit K = ^
= = 20 ln
0,5
K = = 0,25
20
b) H s khuch i khi c hi tip

127
K' =
K
= ^ = 3,33
1+ K.K ht
6
( ^ Bi tp 4-24. Cho mch khuch i

dng J-FET c hi tip nh hnh 4-15.
Bit:
R, = 120kQ
R2 = 30kQ
R3 = 20kQ
Rd = 20kf
mA
HdncaPET g = 5
a) Tnh h s khuch i khi cha c

hi tip m.
b) Tnh su hi tip g v K,,.
c) Tnh h s khuch i khi c hi tip K. ,
Bi gii
y l mch hi tip m, khi cha tnh n hi tip {h R| v R,)
a) H s khuch i
K = g,.R. trong R_ l ti xoay chiu
Ri+Rp
20 + 20
K = 5. l 0l l0 " = 50
b) H s hi tip Kh,
R| +R j
30
(120+30)
1
su hi tip g = 1 + K.Kh, = 1+ 50 - = 11
c) H s khuch i khi c hi tip m
K' =
128
l + K.K ht
. #
11
= 4,545
( l ^ Bi tp 4-25. gim mo phi tuyn cho tng khuch i cng sut t

5% xung cn 1% ngi ta a vo mch hi tip m qua phn p Rj,
R,. Bit khi cha c hi tip
K = 20dB .H yxcnhtrs R ,vR 2.
-----
Bi gii
- K(dB) = 20dB. Suy ra K = 10
a) Xc nh h s hi tip K|,1
Bit y' =
Hnh 4-16
1 + K.K,,
\
I
_ 4
y -1
Kh.=
K I y / " 1 0 U- - > '; " 1 0
1
b) in tr phn p hi tip
K h. =
R
R, + R
-4
2
10
gii ra; R = 1,5R2

Nu---------------------chn
= 20kQ- th
R| = 30kQ.
^
---'I
--( 1 ^ Bi tp 4-26. Mch khuch i thut ton khng o nh hnh 4-17.
Bit h s khuch i ca bn thn b
KTT Ko = 10; R n = IMQ; R, = 20k2
a)Tnh h s hi tipKh,.
b)
Tinh h s khuch i khi c hi tip.

Bi gii
a) H s hi tip
Kht. = ^ = ^
= 4 = 0.02
1.10"
50
RN
b) H s khuch i khi c hi tip m K
1f)4
K' = ----- ^ - = ----- --------- = 49,75
1 + K.K l + 10^0,02
9- 250BTKTNT-A
129
Chng 5
Bm KHUCH I
THUT
TON

B khuch i thut ton (KTT) l b khuch i mt chiu, c hai
u vo mt u ra, h s khuch i rt ln, in p ra t l vi hiu in p
vo, in tr vo rt ln v in tr ra rt nh.
Hin nay hu nh ch s dng b KTT di dng IC. Hnh 5 -la l k
hiu b KTT.
U.
ra
-E
a) K hiu KTT
Hnh 5-1
Theo nh ngha u = Ko(Up- u,,) = KoU,

trong :
= Up - U n l sai lch in p u vo;
Kql h s khuch i ca bn thn b KTT.

Nu N = 0 th
= KqUp in p ra ng pha vi in p vo v ca p
c gi l ca vo thun, k hiu +.
Nu Up = 0 th
= - KqUn , in p ra lun ngc vi in p vo v
ca N c gi l ca o v k hiu l (-).
130
9- 250BTKTOJNT-B
Cc tham s c bn ca ICKTT
Tham s
L tng
Thc
- Tr khng vo Zv
00
Trm kQ
- Tr khng ra z
Trm Q
- H s khuch i Kq
00
lOUO^
- Dng in vo Ip, Ifg
Trm nA
* H s nn ng p h a
Nu U n = Up =
# 0 (U^.^ gi l in p ng pha), theo l thuyt
u = 0 , nhng trong thc t
khc khng.
u = Kc .
- K,. gi l h s khuch i ng pha.
H s nn ng pha (CMRR) l t s gia h s khuch i ca IC TT

l trng Ko v h s khuch i ng pha
CMRR = ^ ; CMRR(dB) = 201g ^ , dB.
Kp
K^,
CMRR vo khong (70 ^ 100) dB.
* c tuyn truyn t (hnh 5-lb) l quan h gia u v Uv = Up - Un
u v Uv ch tuyn tnh trong mt khong hp, ngoi phm vi in p ra
khng thay i v gi l in p bo ho. Khi cha c mch hi tip m bn
ngoi, IC TT lm vic ch bo ho
E.
* Lch khng v h ch khng
Nu thng s tnh hai ca vo p v N khng hon ton cn bng Ip

v
Z|, t Zn th khi Un = Up = 0 vn tn ti in p mt chiu Uo no Uo = IpZp-lNZn
in p ny c khuch i v u ra tn ti in p u ,0 0 gi l
in p lch khng, bi vy phi c bin php u lun bng 0 khi Uy = 0
gi l mch b lch khng.
V nguyn l, mch b lch khng c thc hin bng cch b vo
u vo mt in p mt chiu c tr s ng bng Uqv c cc tnh ngc
vi Q. Mch ny c th thc hin bng cch a in p vo ca p hay N
hoc IC c sn cc chn mc mch b lch khng.
* M ach khuch a i o
131
in p cn khuch i c a n ca o N, cn Rn v R| l hai
in tr hi tip mch ngoi (hnh 5-2).
i vi IC TT l tng, h s khuch i khi c hi tip c xc nh
K = ^ v in p ra u , = - ^ .Uv
R,
"
R,
Du (-) y c ngha l in p ra v vo lun ngc pha.
b)
Hnh 5-2. Cc sd khuch i thut ton c bn
* B khuch i khng o
in p cn khuch i c a vo ca thun p (hnh 5-2b).

H s khuch i in p c xc nh theo biu thc:
U,. = ( l + ^ ) U ,
Nu gia Uy v in p ca p c mch phn p in tr th Up xc nh
theo Uy qua mch phn p .
* M ch cng v tr (hnh 5-3)
Mch cng l mch thc hin hm u = A(U|+ 2+...+U).

Trong U|, u ,
l cc in p vo.
Tu theo s c th l mch cng o hay cng khng o.
132
a)
b)
Hinh 5-3. Mch cng (a) v tr (b)
Hnh 5-3a l mch cng o.

in p ra c xc nh.
K|
Kj
Mch tr (hnh 5-3b)

C th gii mch in theo nhiu phng php khc nhau, nhng thun
tin hon c l s dng phng php xp chng.
U = (l+ ^ )U p -^ U ,
K,
K,
R
= (i+^)
R| Rj + Rp
R
R,
* Mch vi phn v tch phn (hnh 5-4)

Hnh 5-4a l mch vi phn dng IC TT
R
a)
b)
Hnh 5-4. Mch vi phn (a) v tch phn (b)
133
in p ra mch vi phn (hnh 5-4a)
U = - R C ^ = - x ^
dt
dt
Hnh 5-4b l mch tch phn dng IC TT
in p u ra mch tch phn (hnh 5-4b)
u = - ^ '|u.(t)dt=-!-|u.dt
KU
T 0
Trong X = RC gi l hng s thi gian.

@
Bi tp 5-1. Cho mch KTT nh hnh 5-5

R ,
= lOkn
= 500kQ
R N
R.
E=
lOkn
12V
Vit biu thc U,,.

Tnh
nu Uy = 0,2V v cho nhn xt.

Hinh 5-5
Bi gii
a)U,. = - ^ U .
b)U = . ^ U , = . ^ . 0,2 = - l 0 V.
K|
lU
in p ra -lOV ln hcfn E = -12V nn tn hiu ra nm trong vng tuyn
tih, khng b mo.
( l ^ Bi tp 5-2. Hy tnh ton v thit k mch khuch i thut ton vi
cc yu cu sau;
a) in p ra ngc pha vi in p vo.
b) Nu U, = 0,5V th u = 15V.
in tr vo
134
= 20k2.
Bi gii
V in p ra ngc pha vi in p vo nn y l mch khuch i
o, s mch
in
* nh hnh 5-4.
H s khuch i:
*
u.
0,5
Mt khc
K = - ^ = 30 suy ra Rn = 30R,
R,
V R, chnh l in tr vo R, = R, = 20kQ
Suy ra R n = 20kn .30 = 600kQ.
179) Bi tp 5-3. Cho mch KTT nh hnh 5-6a
R2
^vl--/S/^ ^
ra
R
1
a)
b)
Hinh 5-6
Bit R, = 20kQ
Rn = 780k2
R, = 20ka
E = 15V
a) Vit biu thc xc nh Urab) Tnh ,, nu bit u , = 0,30V.
135
Bi gii
a) V in tr vo ca p rt ln nn c th coi nh khng c dng qua
/
\
/
\
R2 nninp, = Up,U= 1+ ^
u
= 1+ ^
U p,p =
R,
/
R,
R ,1 />J
R ,J
\
b)TnhU:
U = ( 1 + ^ ) . 0 , 3 = 1 2 V
u = 12V < E = 15V, tn hiu khng b mo.
Bi tp 5-4. Cho mch in nh hnh 5-6b

Bit
Rn = 500k2
R, = 20kQ
= 20kn
Rj = l o m
R4 = 3 0 m
= 400mV
= SOOmV
a) Xc nh biu thc u.
b) Tnh tr s ca u.
Bi gii
*a) C th gii mch in trn theo cc phng php khc nhau, nhng
tin hn c l dng phng php xp chng.
- Nu ch tc ng
1+_
R.
R 3 //R 4 =
136
R 3 //R 4
.u
R ,+ (R J /R ,)
R 2//R.
u
R 1 y R ,+ (R J /R ,)
- Nu ch tc ng R, -> u =
u = u, + u,=
^ + 1
R 3//R ,
R 3//R ,
v , + - ---- *_ .Uv.
' R ,+ (R ,//R .)
^2 +CR3//R 4)
R3+R,
10 + 30
7,5kf
R2//R4 =
20.30
R,+R,
20 + 30
= 12k2
b) Tnh tr s u:
Thay s vo
U = ( l . ^ )
20
10 + 12
20 + 7,5
= 9,906V
(18 ^ Bi tp 5.5. Cho mch in nh hnh 5-7

y l mch g?
Vit biu thc tnh u^.
Tnh u nu bit:
U, =0,15V
ra
2= IV
= 500R2,
R
= 30k2,
R ,
R p
= 20kQ
= 20kf
Hnh 5-7
Bi gii
a) y l mch tr, thc hin thut ton u = AUy2

thit lp biu thc u, tin hon c l gii theo phng php xpchng
- Nu ch tc ng ngun tn hiu u^, y l mch khuch i o
VI
R
Nu ch tc ng tn hiu u^2
l mch khuch i thun

R
R,
in p ra:
= u,,, +
Rj+Rp
.U V2
2=
R
I Rs +Rp
U V2
-.u
VI
R ,
b) Thay s vo
20
(1 ^
. 1,0 - .0,15 = 6,65 V

20 + 30
20
Bi tp 5-6. Thit k v tnh ton mch khuch i thut ton thc

hin
thut
ton sau:
137
Y = 2a -4b *
Trong :
Y l in p u ra;
a v b l hai in p vo;
4 v 2 l h s.
Bi gai
thc hin thut ton trn phi dng mch tr. S nh hnh 5-7.
a) Xc nh biu thc in p ra
R
Y = (l+ :^ )
R, R, + R_
So snh biu thc
R
R,
v * suy ra
R
(1+4^)
RL= 4
R,
RN
R
4. Suy ra R n = 4R
T>
Thay = 4 vo:
R.
R
^
R
= 2 - ( 1 + 4)------ =- 2
R,+R^
R.+R.
Nh vy thc hin thut ton trn phi chn:
R n = 4R| v R = 1,5 Rp.
Nu R, = 20k n th Rn = 80ka
Nu Rp = 20kQ th R2 = 30kn.
(18 ^ Bi tp 5-7. Cho mch khuch i thut ton nh hnh 5-8
a) Vit biu thc tnh h s khuch i K.
138
b) Tnh tr s u nu bit:
R, = lOkQ, R2 = 200k2
R, = 20kQ, R4= 15k2
R s= 150kO,E= 15V
U, = 0,15V.
Cho nhn xt
Hnh 5-8
Bi gii
a)
y c th coi nh hai tng khuch i mc k tip nhau, tng IC|
c h s khuch i l K| tng IC| c h s khuch i l K .
H s khuch i K c xc nh;
K =
U
= K,K,
U
Trong ; K| =(1 + ^ )
R,
=
R
R
R
Suyra:K = K,.K3 = ( l + 3 ( - R,
^)
R,
R,
R, K
b) Tnh U ra
200^
1 50
1 +
2 0
.0,15=-16,5V
15
139
Nhn xt: V in p ngun -E = -15V trong khi

= -16,5V, nhu v y
in p ra b xn nh, nn b mo. in p ra tuyn tnh phi gim
hay gim h s khuch i K.
(1 ^
Bi tp 5-8. Xc nh phm vi iu chnh in p ra trong mch hnh 5-9

Bit: R| = 10k2
Rn = 250ka
R p
= (0 -2 0 )k a
U v
= 0,2V
Bi gii
- Vit biu thc in p ra
Hnh 5-9
R.
u = -
.U.
R,+Rp
- in p ra s cc tiu khi chit p Rp = 02
u
0 , 2
- 5 V
- in p ra s cc i khi Rp = 20k
u. =-
250
,u = . _ ^ . 0,2 = - 1 ,66 V
10 + 20
R.+R..
R.
Nh vy in p ra s bin bin thin trong khong t -5V n -1,66V

khi iu chnh chit p
R p .
(1 ^
Bi tp 5-9. Cho mch KTT nh hnh 5-10.

Bit:
= 15kO
R ,
R = 250kQ
R3 = 20 k 2
R
= 470k0
E=9V
U, = 25mV
ICTTl l tng
140
a) Vit biu thc h s khuch i K.

b) Tnh tr s u v cho nhn xt.
Bi gii
Dng in ti nt N
I| =
I j+ In v In
= 0 nn I, = I2
Trong d l | =
Suy ra:
Uv-U,
U^-U^
- ^ M
R
R
V N l im t o, nn N = Up = 0
v cui cng =
R ,
. Suy ra
= - Uy *
R j
R ,
Ti nt M: It + I - Ij = 0
4
Um , U . - U m H
R.
R.
R
R,
Thay gi tr
R4
t * vo v gii ra ta c.
/
1
U = . R ,
R. ^1^2
1 1 1
U.
H s khuch i
K=
u
u
Tnh in p ra:
U = - ^ .4 7 0 '
250
15
20
25.10' l i v
470
in p ra u,, = 11V > +E = 9V. Tn hiu ra b xn nh.
141
( l ^ Bi tp 5-10. Cho mch cng o nh hnh 5.11

BitR, = 20k 2
= 25k a
R, = 30k2 ;
u, .---V\Ar
= 500kf
+E
U.
U,=0,1V
u ,
R
-E
U, = 0,2V
3 = 0,3V
a) Vit biu thc
u.
Hnh 5-11
b) Tnh u.
Bi gii
a)
y l mch cng vi ba in p vo U|,
phcng php xp chng:
u, v u,; gii
u=u,+u,+u,,,= -
^ .u , + ^ . 3+ ^ .U ,
R.
' R,
^ R,
500,,
500,,
500,,
U, +^ U, +^ U,
20 25
30
2 5 U , + 2 0 U , + U,
' 30
b) Thay s vo
u = -
500
^500
.0,1 + 20.0,2 + .0,3 = -ll,5V
20
30
Bi tp 5-11. Cho mch in nh hnh 5-12

a) Vit biu thc h s khuch i K.
b) Xc nh tr s nu bit:
142
mch theo
Uv = 0,5V
R, = 20kQ; R2 = 20kQ; Rj = 30kQ
R4 = 250kQ; R, = lOkQ
Hnh 5-12
Bi gii
a) H s khuch i K = Ki-K,
trong K| = 1 y l mch lp in p u = ,
v K. =
K .= 1 +
IR s ;
11
\.
R,5
y>
b) in p ra
u,. = u( 1++
^ ) --- =TT--U.
-U. = (1
.0,5 = 5,2V
U + ----V
_
10 ) ~220
r / r , + R_ 3 '
10
( + 30
(1^
Bi tp 5.12. Cho mch in nh hnh 5-13

Bit Rn = 500k2
R, =25k2
E=12V
in p bo ho lOV
Xc nh in p vo cc i m in
p ra vn trong phm vi tuyn tnh.
Xc nh u vi cc gi tr u = 0 ;
u = 0,4V.
Hnh 5-13
Bi gii
H s khuch ai;
143
K= = . 5 5 = .2 0 .
R.
25
in p vo nh - nh Vp.p
U vp-p = H ^ = ^ = 0 , 5 V
K
20
u = i u
R
= - ^ . U , = -20 U
25
u,
Tnh tr s
ov
ov
+0,4V
- 8V
-0,4V
+ 8V
Bi tp 5-13. Cho mch khuch i nh hnh 5-14
Uv
R.
vv\/
w
Hinh 5-14
a) Vit biu thc

b) Tnh tr s u| v
U. = 0,5 V
144
v u 2
bit:
R, = Ra = 2 0 k f; R3 = 3 0 k a ; R4 = 25kQ
R3 = 500kQ ; Rg = 500kQ ; R7 = 2 5 k Q .
Bi gii
a) u, = K,.K2 , ; trong K, l h s khuch i ca IC,
K2 l h s khuch i ca IC2
., = - ^
u = + M l.u
R.R 4
b) Thay s ta c:
U. =
R..R
U , = . (
20.25
20'
{1 ^
.0,5 = lOV
M ,.0,5=.,0.5V
25
Bi tp 5-14. Cho mch khuch i thut ton nh hnh 5-15.
Hnh 5-15
a) Vit biu thc u.

b) Xc nh tr s
nu bit:
R, = 20k2 ; R2 = 500ka , R3 = 25kf

R4 = 2 0 k a ; Rs = 3 0 k a ;
= 60ka
, = 0 , 2 V ; 2 = 0,3V.
10- 250BTKTINT.A
145
Bi gii
a) y l b khuch i c hai tng IC| v IC2 c hai in p vo.
Trc ht xc nh in p Ural
,.
,=
y chnh l in p a vo ca o ca ICj.
Gii mch in ICj:
i 1l + U,l R3 .
R
R
U.
R
(1 + ^ ) U , A + ^ . U
b) Thay s vo tnh u
u = -
25
20
30
= -13,2V
Hinh 5-16
Bit:
R, = 20kQ
R 2 = 20 kQ
R, = 600kf
146
10-250BTKTNT8
R4 = 30ka
R., = 30kf
= 50k0
R ,= I50k2; U, = 0,1V
a) Hy vit biu thc u = f(UJ.
b) Tnh tr s u.
Bi gii
a) Thit p biu thc u
- in p u ra IC|. u I =
v y l mch lp in p.
\
R.3
u.
= 1+
R
\
/
- in p u ra IC,:
C hai in p ny u a vo u vo o ca IC, nn y l mch

cng o.
Gii theo phng php xp chng:
/
'
u. = -
R,
1+
R3
u.
u.
ura = b) TTiay s vo tnh u

u = (1^
150 150
30 50 (1 . ^30)
0,1 = - 6,8 V

a) Xc nh biu thc u - f( U|, U-,)
b) Tnh tr s u,a nu bit:
U, = 30mV ; U, = 20mV
R, = 20kQ , R2 = 40kQ,
= 200kQ, R4 = 40ka
R5 = 20ka , Rft = 500k2.
147
Hinh 5-17
Bi gii
a)- in p u ra IC|
Urai = U 2 , y l mch lp in p vo
- in p u ra IC2
u .2 = - \ u . + ^ U
R
l R.
y l mch cng o.
C hai in p u | v u 2 u c a vo ca o ca IC , IC l
mch cng o.
3
Gii theo phng php xp chng, ta c:
ura = =-
?
R.
R,
^ . 2 0 .10
20
(1^
R /
R.
R
'
R,
+ ^ (^ u , + ^ u .)
R /R .
R,
'200
40 , 2 0
.3010-'+ .2010
40
= 4,5V
Bi tp 5-17. Cho mch in ICTT l tng nh hnh 5-18

Bit Rn = 500k2
R. = 20kQ
148
'
E = 14V
in p bo ho 12V
a) Hy xc nh Uy cc i m in
p ra vn trong phm vi tuyn tnh.
b) Xc nh
vi cc gi tr
U, = OV; 0,2V; 0,4V
Bi gii
a) H s khuch i khi c hi tip m
R.
20
in p vo nh - nh cc i
u.,
.=
vp-p
25
= 0,48V
b) Tnh tr s
u, = 0 u = 0
u , = +0,2V
u = -KU, = -25.0,2 = -5V
u , = - 0,2V
= - 25.(-0,2) = 5V
u , = + 0,4V
= -K.u, = -25.0,4 = -lOV
u = - 0,4V - , = ~ 25.(- 0,4) = +10V

v
( 0
-0,2V
+0,2V
-0,4V
+ 0,4V
5V
-5V
lOV
-lOV
Bi tp 5-18. Thit k mch

khuch i iut ton thc hin
chc nng sau:
u . = -A
dU,(t)
dt
ra
a) Nu bit Uv = 2Vsinl000t;
R = 2kQ; c = 0,47îF. Hy tnh .
b) V dng in p ra.
Hnh 5-19a
149
Bi gii
a) Chc nng trn l mch vi phn, s nh hnh 5-19a
dU.
dt
U=-RC
= -2. 10^ 0,4710*
d(2V.sinl000t)
dt
= - 2.0,47.10^2.1000 cos lOOOt =

- 1,88 coslOOOt.
b) Dng in p ra (hnh 5-19b)
( l ^ Bi tp 5-19. Cho mch in nh
hnh 5-20. Bit
= lOsin lOOt
c= 1 ^F
R = lOOkQ
a) y l mch g?
b) Vit biu thc
u.
Bi gii
a) y l mch tch phn, in p ra

t l vi tch phn in p vo.
b) thit lp biu thc u, vit
phng trnh ti nt N.
= 0 (v ICTT l tng nn = 0)
dt
Suy ra;
u .= -
Hnh 5-20
RC
TTiay s ta c
u =
1
100 . 10 M 0 -"
= 1(V) cos lOOt.
150
lOsinlOOtdt
u = ov
Bit ti thi im t = 0,
R , =
c=
R3 =
R =
lOOk
1xF
a) Xc nh biu thc u,, = f (U + u,^).

b) Tnh u nu bit u = (IV +
lOV sin lOOt).
u, = -
IV
Bi gii
a) Xc nh biu thc
Phoig trnh dng in ti nt N
R,
R,
Hnh 5-21
dt
dU^
dt
Suy ra
u. =-
dt
vR.
b) Tnh
y R, = R2 = R = lOOkQ, nn c th vit:
1
1
( U . , + U 3)dt =
ra = J{l + 1 0 sinl 00 t - l ) t
RC
lOMO*
,, = 1(V) cos lOOt.
151
Chng 6
NGUN N P
Mch n p l mch in nhm bo m cho in p ngun mt chiu
n nh, khng thay i khi cc tc nhn bt n nh tc ng, v d khi in
p li in thay i, khi in tr ti v nhit thay i. Mch n p c
b tr sau mch lc phng ca mch chnh lu. ng thi mch n p cng
c tc dng gim nhiu, do vy gim c tr s phn t lc ngun Ll, Cl
lm cho b ngun n gin v gn nh hn.
* Mch n p n gin nht l dng it n p (it zener) (hnh 6-1 )
Trong s
l it n p, lun
c phn cc ngc, mi it tn ti mt
gi tr in p n nh nht nh l u^.
U, l in p mt chiu sau mch
chnh lu v lc cha n nh.
2 l in p n nh.
T s c th vit
U , = U r + U, = I,R + U,
Hnh 6-1. Mch n p n gin dng

it zener
R i in tr b
SuyraU = U, = I,.r,= - ^ . r = U , - L R
R + r,
AU
l in tr ng ca it n p r = - , i s
AI,
cng nh n p
cng cao.
Nu v l do no (v d in p li in tng) U t -> I^t - I^.R t .
152
kt qu l u c gi nguyn. in tr tnh ca it zener c xc nh

bng t s gia in p t vo it v dng in qua it
R,h
,.
H s n p mt chiu chnh l h s lc
_ _ AU, _ R + r,
= _ AU
G = ^
hay
>;
Tz
= i + _ _
VR
r.
R 11
Mch n p Crc tip dng it zener ch dng cho ngun cng sut nh,
c hiu sut thp khong 50%, v tn hao trn in tr R v trn kh 1^.
* Mch n p tham s n gin (hnh 6-2)
y thc cht l mch lp emit
(ti emit). Khi h ti R, = 00 dng qua
rt nh.
u,
?
T vbe
L--------u, r^
Dng tnh I0 = y
. 1_____ J
in p n p u ra u = Uj =
Hnh 6-2. Mch n p tham s' n gin
y UE rt nh so vi
,
= const.
nn
in tr trong ca b n p chnh l in tr ra. ca mch ti emit

u c
R. = ^ ; v R < r, nn in p ra
' 1+
ca mch n p t ph thuc vo R,.
* Mch n p tham s (hnh 6-3)
Phn t iu chnh c in tr
thay i theo in p iu khin
c mc ni tip vi ti R,.
l in p chun, thcmg s
dng it n p c
= const.
So
snh
u IT
uM
Hnh 6-3. S khi mch n p iam s
153
Um l in p mu, t l vi in p ra Uj.
B so snh: so snh in p mu U m v in p chun
ln, to ra in p iu khin Uji,.
v khuch i
in p Ut c th vit:
U, = U , - U , , = U, -I. r, ,
Trong
l in tr ca phn t iu chnh ph thuc vo Ud,,. Nu
v nguyn nhn ho m u, tng
u, cng c xu th tng v u^t - > (M
- UJ f lm cho
v
kt
qu l Uj^t, cui cng U, = U|
u<<. c gi n nh.
Hnh 6-4 l mch in
nguyn l n p tham s dng
transistor.
T s mch in suy ra
Ir3
^B1
U,
Um-
R, + R ,
^2 ^BE2
Hnh 6-4. S nguyn l mch n p tham s'
in p ra c xc nh
theo biu thc:
u,+up,
U 2 = ^ - ^ ( R 2 + R, ) = (U, +
Ra
1+
R1
R,
C th tnh gn ng u, u
^ 2)
Nu thay i t' s
R
th c th iu chnh
R.
c in p ra Uj.
* Mc n
dng C thu ton
Thay ch' transistor

T, trong hnh 6-4 c th
dng IC t' 'lt ton
ng tbM lm him v
154
V /
U,
IC <
Hinh 6-5. Mrh n p dng IC thut ton
U,
so snh v khuch i to in p iu khin Udi, nh hnh 6-5.

in p U 2 c xc nh theo cng thc
u,
R,
= u.
R2 J
,v
Tliay i tr s R, v R, c thay i c in p ra u ,.
* M ch IC n p
IC n p c hai loi: Loi khng iu chnh c in p ra v loi c

th iu chnh c in p ra.
7805
+5V
- Loi IC n p khng iu chnh c

in p ra thng thng c 3 chn. Mun
ngun n p bao nhiu vn th cn chn loi
IC n p thch hp. Hnh 6-6 l v d IC n p
Hnh 6-6. IC n p c in p
ra c nh
h 78XX.
- Loi IC n p c th iu chnh c in p ra, v d IC LM ! 17
hoc LM 317 (hnh 6-7).
Trng hp l tng, dng b sung Iadj = 0, in p ra c xc nh
theo biu thc
u . = u..
Trong :
l in p chun
bn trong IC v c t vo in tr
u ,
R|, khi to ra dng
^1
in p u,h thng l 1,25V. T c c
RI J
,v
LM317
'I A D J
U-
R.
1
tr s khong lp,F dng ci thin

c tuyn ra. Trong trng hp thc,
Hnh 6-7. IC n p iu chnh c

in p ra
tn ti dng b sung I^DI d rt nh,

155
khi qua Rj c hai dng in chy qua v in p ra c xc nh.
Ua=U,H
R y
Nh vy c th iu chnh in p U2 bng cch thay i tr s R,.

in p cha n nh | phi ln hn 2 vi vn.
6.2. PHN BI TP C LI GIi
(1 ^
Bi tp 6-1. Mt ngun in mt chiu, khi cha c ti in p l 12V.

Khi c ti in p st xung cn lOV. Tnh mt n nh in p.
Bi gii
mt n nh in p
AU = U o - U , = 1 2 - 1 0 = 2V
Trong ; Uo l i p khi h ti
U, l in p khi c ti.
H s mt n nh in p
100 % = 20 %
t
(1^
10
Bi tp 6-2. Cho mch n p dng it zener nh hnh 6 - 8 .

Bit U, = 20V
U, = U, = 6 V
Dng
= 30mA
R = 400Q
c tuyn it n p nh hnh 6 -8b. Xc nh phm vi R, mch lm

vic trong di n p.
156
a)
b)
Hinh 6-8
Bi gii
- Khi R, c tr s nh nht, dng I, ln nht v dng
nh nht.
Iz = ^zmin = omA (cn c vo c tuyn)

in p trn ti:
U|
o _ _ r
u.' = u, =
R
,
.
. Suy ra R, . =
P j- P
Thay s R, . =
2 0 -6
u R.
u ,- u
= 171,4Q
- Khi R, =
Ur =
Dng qua R, L =
"
R
,-U
400
, = 2 0 - 6 = 14V
= 35mA
Dng qua R, c gi tr nh nht

I.
Suy ra R, =
= I,mi =
^
Ir
- lanax = 35mA - 30mA = 5mA
= 1,2kO
tmin
157
Bi tp 6-^3. Cho mch n p nh

hnh 6-9. Bit u, = I2V; 2 = 9V
Dng Ij, = 25mA
Xc nh in tr b R.
Bi gii
Hinh 6-9
V in tr b R v it zerer mc ni
tip nn dng Ir = I;,
U r = IrR = I,R = u , - U, =
I
(2^
,-
25.10 -3
Bi tp 6-4. Cho mch n p nh hnh 6-10

Bitu = 12V
E
in tr ng ca it n p
r, = 7Q
R, = 390Q
R i ^M
l r. V t
u.
U
D
Re = 12kQ
i RE
R.
R.
I
R, = 240Q
U, = 20V khi h ti R, = co
Hnh 6-10
U, = 18V khi c ti v dng

ti = 5 O11A
H s khuch i tnh ca transistor p = 50
Thin p Uj,E = 0,6V
a) V'cc dng in chy trong mch.
b) Tnh dng qua it l^hi h ti v khi c ti.
Bi gii
a) Chiu v k hiu cc dng in c th hin trong s hnh 6-10.
b) Tnh dng I, khi h ti (R, = co, I, = 0)
U be = IeRe = U. -
158
be =
12V - 0,6V = 11,4V
Suy ra L = ^ L H
^
Rg
be
12.10^
^ Q 95mA
Dng I = - i - = - ^ ^ = 18,6.10Â = 18,6uA

1+ 1+ 50
^
Dng Ic = ls = 50.18,6. lO'Â = 0,93mA
- in p st trn in tr R|
Ur, = U , - U , = 2 0 - 1 2 = 8V
- Dng in
qua R,1 ^ L,
V M
R' = ^ =
390 = 20,5mA
- Dng in qua it n p
=
Ij^,
13
2 0 , 5
0 , 0 1 8
2 0 , 4 8 m A
* K hi c ti R, = 2 4 0 0
Dng in qua R|
Ir
4.
Re
U,
12
R,
12.10'
4. _1 IL 12
5
240
Dng baz L = - i - = .........= ImA

1+ 1+50
Dng6 4qua in
V tr R.;
. L,
R, =
Dng qua D,:

{2^
^ = 15,38mA
I, = Ir, - I = 15,38 - 1 = 14,38mA
Bi tp 6-5. lp li bi 6-4.
a) Khi in p U| thay i 10%, xc nh mt n nh ng d f
K,,
100 %
= y^
b) Xc nh mt n nh ti K, =
100% khi ng v ngt ti.
Bi gii
a) mt n nh in p U khi bin thin 10% l
159
AU,= 10%u, = 10%.20 = 2V

AU| s gy ra bin thin dng in trn in tr R l AIRI
AL. = ^ = = 5,128mA
^
R,
390
Dng in ny coi nh i qua
ra A2 t l vi AU,.
mt n nh tuyt i ca in p
AU, = AI,.r, = AIri., = 5,128.1017 = 35,89mV 36mV

mt n nh ng dy
k = 4=2! 1,00%
"
u.
12
= 0,3%
b) mt n nh ti K,
Khi I, = 0; I, = 20,48mA
Khi 1, = 50mA; I, = 14,38mA
S sai ich dng qua
AI, = 20,48 - 14,38 = 6 ,lmA
A2 = AU, = AI,r, = 6,1.7= 42,7mV
mt n nh ti
42,7.10 -3
100% = 0,356%
K, = : ^ 1 0 0 % =
12
'
U.
Bi tp 6 -6 . Cho mch
n p tham s nh hnh
6-11. Bit:
U, = 6 V
U, = 18V
3e = 0,5V
R, = OkQ; R 2 = lOkQ;
Rp = 5,6kQ; R 3 = 560 a
a) V dng in chy
trong mch.
Hnh 6-11
160
b) Xc nh phrri vi iu chnh in p ra.
Bi gii
a) Dng in mt chiu trong mch c k hiu v ch trong s
, hnh 6-11. Dng Ie, chnh l dng ti I,.
b) in p ra 2 c xc nh theo biu thc
^ R '
u , = ( U , + U , , ) 1+
R
Trorig R v Rj l in tr nhnh trn v nhnh di c phn p.
- Nu con chy ca chit p v a, in p ra s nh nht:
R,
2.in=(U.+3,) 1+
= (.6 + 0,5) 1
10+5,6;
= 10,66V
Nu con chy ca chit p Rp v tr b, in p ra s t gi tr cc m:

^.R,+Rp
R
= (6+0,5) 1+
10 + 5,6^
= 16,64V
Bi tp 6-7. lp li bi 6 -6 .
a) Hy xc nh tr s bin tr Rp in p c th iu chnh nh nht
l 8 V.
b) Tnh in p ra cc i trong trng hp .
B gii
a) in p ra nh nht c xc nh theo biu thc.
R.
=6,5 1+
1+^
Rp4"R2
6,5
- i ------^-51=0.2307
Rp+R2
10
0,2307
11-2SOBTKTOlNT-A
= 8V
Ra =
0,230T
6,5
10 = 33,346ka
161
b) Khi U ramax
U 3. . = ( U , + U BE, )
= (6 + 0,5)
10+33,346
1 4
10
= 34,67V
Bl tp 6 -8 . Cho mch n p dng it zener nh hnh 6-12

Yu cu in p n nh
cn ly ra trn R, l 2 = 12V.
IrN
----
in p cha n nh
U, = 18V.
it zener
c
v dng = 25mA.
+u.
wi
= 6 V,
a) Xc nh s R cn iit.
.b) Tnh tr s Rn v R|.
Bi gii
a)
Dng in chy trong
mch c ch trong s 6 - 12 .
Hnh 6-12
Nu IC thut ton l l tng, th ng Ip = 0

Do vy
25.10^
b) xc nh in tr R n v R c th coi y l b KTT thun vi

yu cu:
Nu Uv = Uo = U , = 6V th u = U , = 12V
Vy
Suy ra
Ua = 1+
^2
R.
U,
R,N
U
R
^ = l =
v Rn = R|
Nu R chn bng 20kQ th Rn = 20 kQ.
162
11.250BTKTINTB
Bi tp 6-9. Cho mch n p tham s dng IC thut ton nh hnh

6-13. Bit: R, = 3 9 0 0
= 5,6kO
Rj = 5,6kQ
R4= 4,7kO
u, = 20 V
U, = 6 V
r, = 7Q
a) Phn tch nguyn l hot
ng ca mch n p.
b) Xc nh in p ra cc
i v cc tiu khi iu
chnh R4.
Hnh 6-13
Bi gii
a) B phn p Rj, R 3, R 4 to in p mu M t l vi in p ra 2 v
c a vo ca N so snh vcd in p chun
do it zener
to
ra, sai lch in p Uj = Up N c khuch i ln v a vo iu
khin transistor T lm cho in tr TcE ca transistor thay i theo nguyn
l, nu U 2 c xu th tng ln th in tr fcE ca T iu chnh cng tng v
nu 2 c xu th gim th CE ca T cng gim, m 2 = U
nn 2
c gi n nh.
b) in p ra cc i khi con chy chit p
u,2max = u ,^ R ,
v tr b
+ R . = 6 r ^ 5 ,6 + 4 , 7 ^ = 17V
5,6 J
R. J
- in p ra cc tiu khi con chy ca chit p
R,
= 6 1+
R3 + R4 y
(2^
v tr a
5,6
= 9,26V
5,6 + 4 ,7 j
Bi tp 6-10. bi lp li bi 6r9
Nu
hti (R, = 00) th u, = 21V
Nu c ti R, = 390Q th u, = 20V v I, = 50mA
.63
a) Xc nh mt n nh ng dy
vi 10 %.
khi U| thay i trong phm
b) Xc nh mt n nh ti khi ng v ngt ti.

Bi gii
a) mt n nh ng dy
K., = - ^ 100 %
U,
10% -> AU, = 10%u, = 10% 20V = 2V
Khi U, thay i
AU, s lm thay i dng qua

AI, = AI =
R,
= = 5,128mA
390
Bin thin AU, = AI,.r, = 5,128.10-\7 = 35,89mV

Cui cng tnh c mt n nh
^
35,89.10 -3
_ AU,
u.z
100% = 0,598%
b) Tnh mt n nh ti
Khi h ti, dng qua
1 =
- = ---- = 38,46mA
R,
390
Khi c ti:
I . = i i ^ = 2 2 z = 35.89mA
'
R,
390
Bin thin dng
AI, = 38,46 - 35,89 = 2,57mA
Bin thin in p ra A2 = AU^ = Al^.r^ = 2,57.10'^.7 = 17,99mV
AU
17 99 10"^
, K, = ^ 1 0 0 % = i / . ^:i.V...ioo% = 0 , 299%
'
u;
'
6 '
164
( 0 ) Bi tp 6-11. Cho mch n p song song n gin nh hnh 6-i4. Bit:
D
lOOQ
innr^*
R, =
R,= 1200
L
U, = 9V
Uhe = 0,6V
R.
U,
p = 50
a) V cc dng in trong mch.
Phn tch ngun l n p.
b) Xc nh in p Uj v cc
dng in I,, I,.
Hnh 6-14
Bi gii
a) in p mt chiu U| cha n p, cn in p 2 c th coi nh n nh
2 = U, + Ube * u, = const (v u, |5p)
Nu U| bin thin th in p trn in tr l
v U c gi nguyn.
l U rs cng bin thin
Dng in chy trong mch nh ch dn trong s hnh 6-14.

b) in p trn R, c coi l n nh
U, = , + UgE = 9 + 0,6 = 9,6V

- Dng in trn R,
I, = ^ = = 0,08A = 80mA
' R. 120
- Dng Is qua in tr Rs
U ,,
R,
- Dng (Ic + Ig) Is
,- u
Rs
2 0 -9 ,6
100
= 104mA
I,
50
Ib + Ib = Is - I . - > 5 1 I b = Is -I.
104-80
SuyraI = I , . ^
= 0,47mA
51
51
Ic = PIb = 50.0,47 = 23,53mA
165
Bi tp 6-12, Mch IC n p LM 317 nh hnh 6-15.

Bit
R.
R, = 240Q
LM317 I
Ra = 3kQ
U,h= U = 1,25V
u,
Dng b sung Iadj = 25 ^.A

Hy xc nh in p ra 2
trong trng hp:
a) Tnh n dng
b)
ÂDJ
-----+ 1
| r , : -\.F
^Rl 1'i<
_1L1]
1
Hnh 6-15
Khng tnh n dng I adjBi gii
a) in p ra khi tnh n dng Iadj
+ 1 ^01-^2 = 1.25 1 +
3.10^
240
+ 25.10-^.3.10^ =16,95V
b) Khi khng tnh n dng Iadj
1\
R,I /
= 1,25
3.10^
1V
240 /
= 16,875V
Sai s gia IC thc v l tng

A2 = 16,95 - 16,875 = 0,075V = 75mV
(20^ Bi tp 6-13. lp li bi 6-12. Nhng nu thay in tr R2 bng
chit p c tr s R 2in = IkQ; R2max = 4,7kO.
a) Hy xc nh phm vi iu chnh in p ra U 2.
b) Nu dng b sung cc i ADimax = 100p.A. Hy xc nh sai s in
p ra gia IC thc v l tng.
B gi
a) in p ra cc tiu
= 125
= 1,25 1 +
in p cc i
166
'
240
R 2mm
= 6,458V
^ ^2tnax
R
= 1,25
240
= 25,73V
Phm vi iu chnh in p 2 t 6,458V n 25,73V

b) Trcmg hp tnh n dng Iadj = lOOxA
1+
2i= 1,25
1
10'
+ 100.10-^.10'= 6 ,558V
240
in p ra
, .= 1 .2 5
1,25 1 +
4,7.10
240
ÂDJâmax
+ 100.10-^.4,7.10^ = 2 6,2V
a) Hy xc nh tr s in tr Rj, Rj.
b) Mun iu chnh in p 2 xung cn 8 V, xc nh in tr Rj cn
thay th.
Bi gii
a)
Nu b qua Iadj (coi IC n p l l tng) th in p ra 2 c xc
nh qua R| v R theo biu thc.
/-
U, = 1,25 1 + -^^2
R.
12 = 1,25
V
R,
12
R,
1,25
-1
-> R 2 =
R .y
12
1,25
.R
R2 = 8 ,6 R|
Nu R, = 240Q th R, = 8,6.240 = 2,064kQ
167
b) Nu 2 = 8V
u , = l,25
RI J
/
R,
1,25
1 ^R 2=
= 8V
8
u ,2 5
-1 .R.
Rj = 5,4 R ,. Nu R, = 240Q th Rj = 5,4.240 = 1296Q = l,296kQ

( 0
Bi tp 6-15. Cho mch IC n p LM 317 nh hnh 6-16. Bit

R, = Rj =
= 2400Q
R4= 2400Q
R5 = 240Q ;U ,h=1.25V
T T2, T3 lm vic ch
kho (tt, m) bi xung iu
khin X, X2, X3.
Nu X = +5V mc 1 th
ansistor thng, r(3 = 0
Nu X = o v ansistor tt,
CE= 00. B qua dng Iad,.
Xc nh in p ra 2
trong cc trng hp sau.
a )X ,= X 2 = X 3 = 0
b)
Hnh 6-16
X , = X 2 = 0; X 3 = 1
c) X , = X 2= X 3= 1
Bi gii
a) Trng hp X| = X 2 = X3 = 0, c ba transistor u trng thi kho
*
(fcE = 00) in tr nhnih di phn p Rp chnh l R4 khi in p ra.

U2=1,25 1+
b) Trng hp X =
168
Rp
R,
= 1,25 1+
2400
240 )
= 13,75V
= 0; X3 = 1; T|, T2 tt, T3 thng.
_ //n _ R 3R 4 _ 2400.2400
Khi Rp = RJ/Ra = .^'-r ..= ------ = l,2kQ
R + R , 2400 + 2400
3
1200
= 7,5V
U , = 1,25 1 + ^ = 1,25 1+
240
j
R .y
c) Trmg hp X| = X2 = Xj = 1 c ba transistor u thng.
Khi R^ = R /R :J /R J /R ,
2400
R ,//R 2 =
2
2400
R3//R4 =
R, // R 2 // R 3 // R 4 =
,= l,2 5
= 12000
= 1200Q
1200
= 4,375V
= 1,25
= 600Q
240J
Bi tp 6-16. lp li bi 6-15, vi tr s cc in tr l:
R, = kCl; R 2 = 2kO; R 3 = 3kQ; R4 = 2,4kQ
Hy xc nh ra cho cc trng
sau:
X,
X2
X3
a)
b)
c)
d)
a) Trng hp X = 001, Xj = 1 -> T3 thng, khi in tr nhnh di Rp
= R //R , = -M i - =
= l,333kQ
'
R + R , 3 + 2,4
in p 2 = 1,25
= 1,25
R.
1.333^
= 8,192V
240 ,
169
b) Trng hp X = 010. X, = 0; X2 = 1; Xj = o
T, thng, T| v T3 tt
R
Khi
_M 4_
R 2 +R 4
u , =1,25 1+
= l,09kO
2 + 2,4
= 1,25 1+
1090
= 6,927V
240 J
c) Trng hp X = 011 -> T| tt Tj v Tj thng

R =
'
//R j //R , = -------- E i M -------- = ------------------------'

' RjR j+R jR ^+R .R ^ 2.3+ 3 .2 ,4 + 2,4.2
= 0 , 8 kQ = 800Q
u,=l,25
= 1,25 1+
d) Trng hp X =111 -> X, = 1;

T
t h n g .
K h i
R p
800^
240J
= 5,416V
= 1; X 3 = 1
=
R , / /
2/ /
3/ /
Rp R,
R, ^ R,
--I ^ *'2
*'3 ^ R IkQ ^ 2kQ ^ 3kQ ^ 2,4kQ
1
1
= 2,25 ^ R = - ^ = 0,444kQ
R
2,25
in p u , = 1,25 1 + Rp = 1,25
444^
240j
= 3,56V
Cui cng c th thit lp in p U2 ng vi tn hiu s u vo iu

khih transistor.
170
U2
000
13J5V
001
8,19V
01 0
6,927V
01 1
5,416V
111
3,56V
Bi tp 6-17. Cho mch IC n p LMl 17 nh hnh 6-17. Bit

R, = 240n
Rch=l,25V
R, = IkQ
Bin tr R3 = 0 -4- 3,3kfi- B qua
dng Iad,a) Xc nh phm vi iu chnh
2 nh bin tr Rj.
b) Nh cu a nhng nu tnh n
dng Ia0j = 50fiA.
Bi gii
a) Xc nh phm vi iu chnh 2 khi b qua Iadj
- in p ra nh nht ng vi v tr a ca con chy bin tr R .
3
2. i=1,25
= 1,25 1 +
1000
= 6,458V
- in p 2 ln nht ng î v tr b ca con chy R;

U ramax = 2, m
_ax= l , 2 5
= 1,25
0,24 J
R
= 23,64V
Phm vi iu chnh 2 t 6,458V n 23,64V

b) Trng hc^ tnh n Iadj
/*
1+
= 1,25 1 +
1000
240
+ 50.10-^.10^=6,506V
171
u ,. = l,2 5 l + l l l
R
10^+3.3.10^^
+ 50.10-^ (10^+3,3.100 = 23,855V
240
= 1,25
( 0 ) Bi tp 6-18. Hy thit k mch n p dng IC LMl 17 (hnh 6-17) vi

R3 = 0; c in p ra 2 n nh 24V t ngun mt chiu khng n
nhlSOV.
a) Hy xc nh tr s Rj, R, cn thit.
b) Nu dng Iadj = lOOfxA hy xc nh sai s'do dng ny gy ra.
Bi gii
a) T biu thc
R
1+ _ .1,25. Suy ra
R ..
<u.
1,25
TTiay s Rj =
1,25
R.
1 .240=4368n=4,368kQ
)
1.25
b) Nu tnh n dng I^DJ
u, =0,125
R ,.
= 0,125 1+
4368
240
Sai s 24,368 - 24 = 0,368V

0,368
hay
172
24
+ I.rM
-R
ADJ*'2
= 100.10-^.4,368 = 24,4368V
100% = 1,53%
Chng 7
MCH DAO NG
Cc mch dao ng hin nay c chia ra mch dao ng iu ho hnh
sin, mch to xung cc dng khc nhau (xung vung, ch nht, rng ca,
tam gic...) v cc mch to tn hiu iu ch (AM, FM).
Trong phn ny ch yu xt mch dao ng iu ho l loi mch dao
ng c s dng rng ri trong cc h thng thng tin, cc thit b o
lmg kim tra v trong cc thit b in t dn dng, y t.
to mch dao ng iu ho thng s dng mch khuch i t
kch nh hi tip dng. Mch dao ng iu ho c th lm vic trong
khong tn s t vi Hz n hng nghn MHz.
Hnh 7-1 l s khi m t mch dao
ng iu ho, y l mch khuch i u ra
ni vi u vo qua mch hi tip dng.
iu kin dao ng ca mch:
K.Kh, = 1 (iu kin bin )
k + 9 ht = 2 ri7i (iu kin pha)
....
----- ^
Kne
------ '
Hnh 7-1. To dao ng iu

ho bng hi tip dng
Trong K - h s khuch i khi cha c

hi tip;
K|,, - h s truyn t hi tip;
(Pi( - gc lch pha ca bn thn mch khuch i;
(Ph, -
gc lch pha ca mch hi tip.
Nu m bo c hai iu kin trn th s c dao ng iu ho.
173
* Mch dao ng ha im in dung (hnh 7-2a)
S gi l mch dao ng ba im in dung v dng t in C| v c,

phn p v ly mt phn in p trn C2 hi tip v u vo.
iu kin pha
X be =
-<0
coC-
XcE= -
(C
<0
XcB = L > 0
L thuyt chng minh mch tho mn iu kin cn bng pha, c
hi tip dofng.
iu kin bin :
KXh, > 1
Trong : K l h s khuch i ca tng mc theo s EC
K--_ R
%E
Kh, l h s truyn t hi tip.
72.
b)
Hnh 7-2. Mch dao ng ba im in dung (a) v ba im in cm (b)
TTio mn iu kin pha v bin s c dao ng iu ho hnh sin,

tn s dao ng c xc nh theo biu thc:
174
f d d = ^ =
,H z
2 L _ ^ l ^
V C1 +C 2
Trong c tnh bng Fara;

L tnh bng Henri.
thay i tn s dao ng c th thay i in cm L hay in dung
C|, C2 nhng trong trng hp ny tin li hofn l thay i tr s L.
* Mch dao ng ha im in cm (hnh 7-2b)
Mch ny ch khc mch dao ng ba im in dung ch mch phn
p to in p hi tip dng hai in cm L| v L2 in p
cun L2
c a v hi tip.
iu kin pha X,g = cL, > 0
co-/| ^ 0
X c . = - 4coC
:< 0
L thuyt chng minh tho mn iu kin cn bng pha v c hi

tip dcfng.
iu kin bin : K.K|,, > 1
Nu tho mn c hai iu kin trn, mch s dao ng v to ra dao
ng iu ho hnh sin.*
Tn s dao ng c xc nh theo biu thc:
L . = ----- _ J = = _ , H z
2nL+L2)C
thay i tn s dao ng y thun tin l thay i tr s in

dung c.
* Mch dao ng R-C di pha (hnh 7-3)
Mch dao ng R-C thch hp to dao ng tn s thp;mch c th
dng linh kin ri rc transistor hay dng IC thut ton.
y cc mt lc R-C dng di pha v chn lc tn s, thcmg dng
hofn c l 3 mt lc
R-C.
iu kin
pha;
V mch
khuch i
thut
ton l khuch i
o nn
c hi tip dcmg th mch hi tip gm ba mt lc R-C phi lch pha thm
175
mt gc (Pht = 180. Nu dng ba mt lc R-C ging nhau th mi mt lc

R-C phi lch pha (Pht = 60.
L thuyt chng minh rng
tho mn iu kin pha th
1
0) =
S rc
2 n S R .C
Kh.=
-
v khi
29
Hnh 7-3. Mch dao ng R-C di pha
m bo iu kin bin
K.K,, > 1 suy ra K > - ^ = 2 9 .

Kht
Trong K l h s khuch i ca mch khuch i o
K = 2 9 = -^ vRN = 29R ,.
Khi tn s dao ng.
*
* Mch dao ng cu Wien

Mch dao ng cu Wien l
mch ao ng R-C dng mch cu
Wien lm mch hi tip t u ra v
u vo (hnh 7-4).
iu kin cn bng pha: v mch
hi tip a v u vo thun nn
c hi tip dng th gc lch pha
(Ph, =
0 v khi
S chn lc f =
co=
2tcRC
RC
. Suy ra tn
v Kh, = - .
iu kin cn bng bin :
176
,Hz
K.K,, > I. Suy ra K = 3 v K,((-).=
R -f
= - do vy Rn = 2R|.
3
7.2. PHN BI TP C LI GI
(2^
Bi tp 7-1. Cho mch dao ng ba im in dung (hnh 7-2a). i

thit mch m bo iu kin pha v bin .
a) Nu bit in cm L = 0,4mH, in dung tcttg ng
c=
=
C+C2
. Hy xc inh tn s dao ng.
0,1
b) Nu gi thit c =
o', 47 |iF Hy xc inh in cm L cn
C1+C2
thit to mch dao ng tn s 8000 Hz.

Bi gii
a) Tn s dao ng c xc nh theo biu thc:
fd -
Thay s vo ta c
2n L. C1C2
'i C +C 2
d = ---------,
= 25,19kHz
2 .3 ,14V0,4.10'^.0,1.10'^
b) T biu thc trn suy ra

L = . = ------- ^ -----L _ ------- ^ = 6,74mH
(2 7 tf)^ C
( 2 . 3 , 1 4 r ( 8 0 0 0 r . 0 , 4 7 . 1 0
( Bi tp 7-2. lp lai bi 7-1. Nu bit c = --?- - ^- = lîF, in cm L

V y
C + C2
c th iu chnh t 0,5mH n l,5mH. Hy xc nh phm vi thay
i tn s dao ng.
Bi gii
Tn s dao ng cc tiu g vi tr s Lax
12- 2S0BTKTINT - A
177
^tnin
2n C1C2 L.
C| + max
= --------- i .-............ =4111.4 Hz

2.3,14V10'^1,5,10'-'*
Tn s dao ng cc i ng vi tr s Lj.
_________ ________
^max
2 ti
rn %
min
c, +c
= 7120Hz
2.3,14>/l0^0,5.10'^
Bi tp 7-3. Cho mch dao ng ba im in cm nh hnh 7-2b.

Gi s mch m bo iu kin bin v pha.
a) Nu bit L = L| +
dao ng.
= 0,1 mH,, t c = 0,47^F. Hy xc nh tn s
b) Nu L = L + L2 = 0,1 mH. Hy xc nh khong bin thin ca t c

mch dao ng t tn s 12kHz n 160kHz.
Bi gii
a) Tn s dao ng c xc nh theo biu thc:
f= =
= --------------J---------------- = 23,376 kHz

2WL.C 2.3,14V0,1.10*^0,47.10'^
b) Tn s dao ng cc tiu f ng vi tr s cc i ca t in
n2
^min
Thay s ta c
= l,76îF
0 1.10>-3
tn S dao ng cc i ng vi tr s ci.
f_
^max =
1
2lty~c min
Thay s c^:_ =
Suy ra
2%
= 9,9.10-^F = 9,9nF.
/ 21 ^ Bi tp 7-4. Cho mch dao ng R-C di pha nh hnh 7-5 di y.

Bit
178
R = R, = 10kf
12- 250BTKTINT - B
C = 0,01îF
Rp= lOkQ
a) Xc nh tn s' dao
ng ca mch.
b) Tnh tr s cn thit
ca R^.
Bi gii
a) Xc nh tn s dao ng
Hnh 7-5. Mch dao ng R-C di pha
f = ---- ^= = ----------= 1----------- ^ = 650,2Hz

27n/6RC
2.3,14.V6.10.10^.0,01.10'^
b) mch dao ng phi m bo iu kin bin .

bit m bo iu kin pha 9 |,( = 180 th K, = .
iu kin bin K.Kj,, = 1. Suy ra K = ^ =29
K:ht
Mt khc K= ^
. Suy ra Rn = 29R, = 29.10 = 290kQ
^1
(2^
Bi tp 7-5. Hy thit k mch dao ng R-C di pha dng IC thut

ton c tn s dao ng 2kHz.
Bit tr s t in c trong cc mt lc R-C l nh nhau v c chn
bng 0,0 l|iF.
Bi gii
a)
Mch dao ng R-C di pha 3 khu RC c thit k nh hnh 7-5.
Trc ht xc nh tr s R ca mt lc R-C.
T biu thc tn s dao ng
Suy ra R =
f=
2it>/6R.C
2jtN/6C.f
thay s vo ta c
= 325 in = 3,25 IkQ
R=
2.3,14.n/6.0,01.10"^2.10^
179
ly in tr chun R = 3,3kQ
in tr R, cng c tr s bng R.
b)TnhRf,
m bo iu kin bin xc nh c h s truyn t ca
mch hi tip Kh, = ^
^29
iu kin bin K.K,, = 1. Suy ra K - ^ = 2 9
K l h s khuch i
IC thut
ca mch
ton
= 29 ^ R n = 29R, = 29.3,25IkQ = 94,279kQ
R n = 94,279kQ
Xc nh li tn s dao ng, ng vi cc tr s in chn theo tiu chun.
---- ^
^
=
1970Hz
27tV6R.C 2.3,14.V6.3,3.10^0,10.10^
(2^
Bi tp 7-6. Cho mch dao ng R-C di pha 3 khu nh hnh 7-5. Nu

bit in tr R = lOkQ.
a) Hy xc nh tr s t c ca mt lc R-C mch dao ng tn s
2500Hz
b) Tnh tr s in tr R^.
c) Nu thay i ng trc c ba in tr R t 4,7kQ n 20kQ. Hy xc
nh phm vi thay i tn s.
Bi gii
a) T biu thc f = - L_ - Suy ra c = 27Ta/ 6 R .C
27tN /6R f
Thay s ta c
c = --------- = J -----r------ -2,6.10^=2,6nF
2.3,14.V6.10.10l2500
b) m bo iu kin bin th h s khuch i k = 29
180
K = B i = 29 -> Rn = 29 R, = 29 R = 29.10kQ = 290kQ.
c) Khi
= 20k 0 tn s dao ng t gi tr cc tiu
fmin = ---- ------------= ------- E ^ --------- 15- = 250Hz = 1,25kHz

2 jt>/6 Rn,ax -C 2.3,14.^/6.20.10^.2,6.10"^
Khi R = R| = 4,7kQ tn s dao ng t gi tr cc i
fmax = ---- -----------= ----- :..----------------------:;3- = 5320Hz = 5.32kHz
27tN/6Ri.C 2.3,14.^/6.4,7.10^.2,6.10"^
Bi tp 7-7. Tnh ton mt mch dao ng R-C di pha ba khu dng
FET(hinh7-6).
Bit;
h dn ca FET
8mA
(8mS); in tr
Sm
V
cc
mng
ngun
= 50kQ. in tr mt
lc R = 20k0.
a) Xc nh tr s t c
mch dao ng tn s
500Hz.
Hnh 7-6. Mch dao ng R-C di pha dng FET
b) Tnh tr s in tr RoBi gii

a) T biu thc tnh tn s dao ng
f = i Suy ra c = =
2itV6^R.C
2jV6Rf
ITiay s vo ta c
-6,510 ^F = 6,5nF
2.3,14.n/6.20.!0^500
b) xc nh in Rq, trc ht xt iu kin bin .
c dao ng iu ho K > 29; y c th chn K = 50.
181
R r
Khi K = gm-R., trong R_ = ^
l ti xoay chiu ca tng
khuch i.
R .,^ ,^ D ^ S u y r a R = J ^
*ds
m*ds ^
Thay s vo ta c
50.50.10^
Rd =
= 7,140kQ
8.10"^50.10^-50
(22^ Bi tp 7-8. Cho mch dao ng R-C di pha 3 khu dng transistor
nh hnh 7-7. Bit R =
10kQ,C = 0,01|aF.
H s' khuch i p = 50, in
tr emit-baz BE = 2 kD, gi
s mch m bo iu kin
bin v pha.
a) Xc nh tn s dao ng.
b) Tnh tr s in tr RcBi gii
Hnh 7-7. Mch dao ng R-C dng transistor
a) Tn s dao ng:
^=
2W6R.C
F ^ --------- 3^ = 650Hz
2.3,14V6.10.10\0,01.10"^
b) tho mn iu kin bin , th h s khuch i K ca mch

khuch ai transistor mc EC.
K.Kh, = 1; bit Kh, =
Vy
K=
Kht
29
= 29
Mt khc, h s khuch i ca tng khuch i R-C mc emit chung

p_ R ^ - - S R e
K = _ _ 1
I-be
182
Trong s = l h dn ca transistor;
rbe
Du - c ngha in p ra v vo ngc pha.
c..
Suy ra
.Kjbe
29x2.10^
=
------------ = l,16kQ
50
Chn in tr chun R = l,2kQ.

(2^
Bi tp 7-9. Cho mch dao

ng cu Wieu nh hnh 7-8.
Bit: R = 33kQ
c = lOnF
Gi thit mch tho mn iu
kin bin v pha.
a) Xc nh tn s dao ng.
b) Tnh tr s
R, =47kQ.
Rn nu
cho
Bi gii
Hnh 7-8. Mch dao ng cu Wien
a) Tn s dao ng
f=
2JtRC
= 482,5kHz
2.3,14.33.10^0,01.10"
b) T iu kin cn bng bin

Rn = 2R, -> Rn = 2.47.10^ = 94.10^ Q = 94kQ
(2^
Bi tp 7-10. lp li bi 7-9. Nu thay in tr R bng chit p

ng trc c in tr bin i t lOkQ n lOOkQ.
Hy xc nh phm vi tn s dao ng.

Bi gii
Tn s fî ng vi tr s cc i ca chit p
= lOOkQ
^^
= 159,2.3Hz
^min ------!----- = -----27tCRax 2.3,14.0,01.0""100.10^
183
Tn s
ng vi tr s cc tiu ca chit p Ri = lOkQ
fmax = ----- ^ 2------------------------------ r = 1592,3n = l,5921ca

2nCRmn 2.3,14.0,01.lO ^lO.lO^
Bi tp 7-11. TTiit k mch dao ng cu Wien to dao ng hnh
sm tn s 500Hz.
Bi gii
C th thit k mch dao ng cu Wien dng transistor ri rc hay
dng IC thut ton, nhng thun tin hn l dng IC thut ton. Mch in
nguyn l nh hnh 7-8.
- Mun c dao ng iu ho hnh sin phi m bo iu kin bin
v iu kin pha.
iu kin bin : Rn = 2Rj; R chnh l nhnh di ca phn p hi
tip, y chn R = 22kn v khi Rn = 2.22kf = 44kQ.
- iu kin pha:
hi tip v ca p l hi tip dong th gc pha
,, = 0. Suy ra co = hay f =
RC
^
2nRC
Mun dao ng tn s 500fe c th chn R v c tu . Nu chn t
c c tr s chun l 0,01|iF th tr s R c xc nh:
:;^ = 31,847kQ
R =
27fRC 2.3,14.500.0,01.10'^
Nh vy tr s in tr cn tnh ton:
R, =22kn,RN = 44kQ
R = 31,847kQ,C = 0,001nF.
Bi tp 7-12. Ch mch dao ng cu vin nh hnh 7-9.
Bit
R =l kQ
R, = 80kQ
c = 0 ,0 22 ^F
Chit p Rp c tr s thay i t 0 n 30kQ.
a)
184
Hy xc nh phm vi tn s dao ng khi iu chnh chit p Rp.
b) Tnh in tr Rfg.
Bi gii
ra
a)
Phm vi tn s dao ng ph
thuc vo tr s chit p Rp mc ni
tip vi R.
Tn s f| ng vi gi tr cc i
ca Rp = 30kQ.
_ fX J ? v _ v w
K
R
1
27t.C ^R + Rpmax)
1
2.3,14.0,022.10" (10.10^ + 30.10^)
1
= 180,95Hz
2.2,34.0,022.10"^.40.10^
- Tn s cc i
Hnh 7-9. Mch dao ng cu Wien c

tn s iu chnh
tig vi Rp = 0 Q.
f ,
27C.CR
_________ !_________
2.3,14.0,022.10 ^10.10^
723,8Hz
b) Xc nh tr s R n
Rn = 2R, = 2.80kQ = 160kQ.
^ 2^ Bi tp 7-13. Cho mch to dao
ng cu Wien nh hnh 7-10
di y.
Bit:
R. = 22kQ
R = 4,7kQ
a) Xc nh tr s Rn cn thit.
b) Tc dng ca D D .
c) Tnh tr s bin i ca t c
tn s' dao ng t 100Hz n 2000Hz.
Bi gii
a)
m bo iu kin , Rn
c tnh theo biu thc
185
R n = 2R, = 2.22.10' n = 44. lO'n = 44kQ

b) it D| v D t mc ngc chiu v song song vi in tr Rn, tc l
song song vi nhnh trn ca phn p hi tip, nhm hn ch bin in p
ra. Nu bin in p ra tng qu mt ngng no th hoc D, hay
dn, in tr ca it gim xung v h s khuch i ca b khuch i
thut ton cng gim v in p ra c hn ch.
c) Tn s dao ng c xc nh
2jrRC
Khi tn s cc tiu
th tr s t c phi t gi tr cc i
C
Tnax
------= 0.338^F
2.3,14.4,7.10^100
Khi tn s cc i max th tr s ca c i cc tiu

1
1
c =--- ------=--------------------
= 16,94nF.
2.3,14.4,7.10^2000
(2^
Bi tp 7-14. Cho mch

dao ng cu Wien nh
hnh 7-11.
Bit: t c = 0,05|iF.
Tn s dao ng cn thay
i c t 200Hz n
2000Hz nh bin tr R.
a) Phn tch nguyn
hot ng ca mch.
b) Xc nh khong bin
thin cn thit ca R.
Hinh 7-11
Bi gii
a) Phn tch s
y l mch dao ng cu Wien; mch cu R-C c mc gia u ra
v u vo p ca khuch i thut ton lm thnh mch hi tip dng. N
186
m bo iu kin cn bng pha v bin th s c dao ng iu ho. Tr

s R v c ca cu Wien s quyt nh tn s dao ng.
it D, R4 v FET nhm n nh v hn ch in p ra. Khi tng,
in p m qua it D t vo cc ca ca FET lm cho in tr mng ngun ca FET tng ln, y l nhnh di ca phn p hi tip nn h s
khuch i gim i v u c hn ch.
b) T biu thc xc nh tn s dao ng
f=
1
suy ra R =
2tcRC '
2?tCf
Tn s dao ng cc i s ng vi gi tr cc tiu ca R.
R
27tCfâx
______________ ____________ __ 592Q
2.3,14.0,05.10"^2.10^
Tn s dao ng cc tiu fî s ng vi gi tr cc i ca R.

R^...
max = ---- ---- = ---------?----- T =15,923kf
2iCfîn 2.3,14.0,05.10".200
(2^

Bit: R, = 150kQ; R, = 1OOkQ
a) Phn tch mch.
b) Hy xc nh hng s thi gian

X= RC to tm hiu ra c tn s 1 kHz.
c) Nu bit c = 0,02 }iF hy xc
nh tr s cn thit ca R.
d) Xc nh tr s cc i ca in
p U| t vo ca p nu in p
bo ho
= 12V.
Hnh 7-12
Bi gii
a) Phn tch mch;
y l mch dao ng a hi (dao ng Schmitt, in p ra l cc xung
ch nht c mc +5a, v
R| v R2 l hai in tr phn p to hi tip
dng, in p hi tip a v ca p.
187
in p hi tip v ca p
U , = H 5L - . R
*
+ R 2
Khi tr s trn t c np bng | th mch chuyn trng thi v

b) Chu k dao ng c xc nh theo biu thc
T = 2RC In
Suy ra
R.
X = RC =
21 n 1+
Trong chu k T = - = -- = 10
R,
= Ims.
10-3
X= RC =
21 n
2 . 100 . 10 1 50. 10 ^
c) Nu bit tr s c = 0,02.10'F, tr s R c xc nh
T
0,592.10"^
R = =
c
0,02 . 10 "
= 29,6kQ
12
.3
d) in p U. = -^2L _r = -------- ^
.100.10 = 4 , 8 V
R j+R 2
100 . 10 ^ + 150.10^
Tr s nh nh ca in p vo U|
u,p.p= 2.4,8=+ 9,6V

Gi s in p bo ho u, = 12V
R, = 30kQ; Ra = 20 kQ; R = 12 kQ;
c = 0 ,0 2 îF
a) Hy xc nh in p hi tip | t vo cc p.
b) Xc nh chu k T v tn s dao ng.
188
= -U
Bi gii
a) in p u
|
'
R 1 +R 2
30 + 20
20 = 4,8V
b) Xc nh chu k T
T = 2RCln
= 2 . 12 . 10 ^0 ,02 . 10-^ In
2 .20 . 10 ^!
= 0,406.10"^s
30.10^ J
Ri ;
Tn s dao ng f = =
*
= 2458,8Hz
T 0,406.10'^
(2^
Bi tp 7-17. Cho mch in nh hnh 7-13a.

Bit;
R, = 10kQ
= 20 kQ
R = 100 kQ
c = 0,01 iF.
Gi s in p bo ho l 12V
a) Phn tch nguyn l to dao ng.
b) Xc nh chu k dao ng.
c) Xc nh tn s dao ng.
d) Xc nh tr s nh xung ch nht v xung tam gic.
Hnh 7-13a
18
Hnh 7-13b
Bi gii
a)
y l mch to xung vung U| v xung tam gic U 2; IC| l mch so
(Triger Schmitt) v IC2 l mch tch phn.
Gi s ti thi im t = 0 in p u ra IC| l U| = -Uja,.
in p ngng hoc in p lt trng thi l ug.
trong R, = KR, (h s K phi > 1)
u, =
2
u ra ca b tch phn IC2

u , = -u,
Ujt) bin thin theo thi gian t.
J
U2 (t) = [U(t)dt + 2 (o), ong U-,(t) in p Uj ti then im t = 0.

RC 0
190
ThayU,(t) = -U,
2(0 ) = -U,
Dng in p u ra IC| xung vung v u ra IC, xung tam gic

nhhnh7-13b.
b) Chu k dao ng T
T = ^ * y K = |l = ^ =2
K
R| 10
T=
= 2RC = 2.100.10^.0,0 1 . 10"^ = 0,002s = 2ms

2
c) Tn s dao ng
f = ^ = = 500Hz
T 2.10^
d) Tr s nh xung ch nht l U|p.p = 12V
Tr s nh xung tam gic chnh l in p ngng g =
(2^
= 6 V
Bi tp 7-18. Thit k mch to xung tam gic c tn s 1kHz vi

in p bo ho Uja, = 12V, in p nh l 8V.
Bi gii
S mch to xung tam gic nh hnh 7-13a. in p nh - nh l
8V tng ng vi in p ngng ug = 4V, h s K =
= =3
^ng
4
in tr R, v R2 c xc nh theo t l
= K . Suy ra Rj = KR| = 3R|.
Chn R, = 12kQ th R2 = 36kQ

Hng s thi gian X = RC c xc nh theo biu thc
f = ^ suy ra
4RC ^
X = RC =
4f
- = 0,75.10^s = 75ms
4.1000
Nu chn t c = 0,01|aF th in tr R c xc nh
0 ,0 1 . 1 0 "^
191
Chng 8
CHUYN I TNG T - s V s - TNG T

Trong h thng thng tin s bt k bt buc phi c b chuyn i
tcmg t - s (AE)C) v s' - tcmg t (DAC). Vic chuyn i c thc
hin khu u v khu cui ca knh thng tin v dng m nh phn.
Tn hiu s c biu din di dng m nh phn
Ud = b.,.2 "'+b.2 "-=^+...+b,2 '+b2 .
Vi d: .2% 0.2^ +1.2V 0.2'+1.2' = 45
Tn hiu D= 101101.
bn.,: l bit c ngha ln nht (MSB)
b^: l bit c ngha nh nht (LSB).
S s hng trong dy s nh phn gi l s bit, v d trn l 6 bit.
Chuyn i tng t - s gm cc khu chnh: ly mu v gi mc, lng t
h v m ho.
Ly mu l ri rc ho tn hiu theo thi gian v phi tun theo nh
lut Shannon. Tn s ly mu c xc nh.
hay chu k ly mu T = - ^ ,s
*sa
Trong :
l tn s cc i ca tn hiu cn chuyn i. Nu s bit
l N bit, in p mu l U m th s mc lng t l 2"^ v bc lcmg t Q
(khong cch gia hai mc lng t lin k) c xc nh
Q=
Sai s lng t li nht
192
2*^-1
ng vi Q , tc l
E= -Q =
2^
2 (2 " - 1 )
Nh vy s' bit N cng ln th sai s cng nh.
* Cck' phg php chuyn i AD
Tn ti mt s phong php chuyn i AD:
- Phng php chuyn i song song. in p analog cn chuyn i
c ng thi c a vo cc b so snh so vi in p chun
c chia p thnh cc mc in p trng vi cc mc lng t. u fa
ca cc mch so c a vo cc mch AND sau a vo mch m
xung v m ho.
u im ca mch chuyn i A/D song song l tc chuyn i rt
cao, v in p chuyn i c a ng thi vo cc tt c cc b so, ch
ph thuc vo tn s xung nhp (xung ng h) a vo mch AND.
Nhc im: Cu trc mch rt phc tp, mun chuyn i N bit cn
2'^-1 b so snh v 2^-1 mch AND.
- Chuyn i theo phcmg php tim cn gn ng. in p tng t
cn chuyn i c so snh vi in p analog Um- y l in p c
chuyn i ngc t u ra a v b so (hnh 8 - 1 ).
Hinh 8-1. B chuyn i DA tim cn gn ng
Nu
> Um th u ra b so c mc 1 v sau mt chu k xung nhp c
mt xung c a vo b m, ng thi tn hiu s Uq li c chuyn
i ngc thnh in p analog u^, ri li a vo b so. Nu
< Um th
u ra b so c mc o v khng c xung no c a vo b m v qu
trnh chuyn i dng. S vng so snh ph thuc vo s bit lcmg t N.
u im: Cu trc mch n gin.
13- 250BTKTINT - A
193
Nhc im: Tc chuyn i b hn ch, khng cao.

- Oiuyn i theo phng php m xung n gin (hnh 8- 2 )
in p cn chuyn i
c avo b so SS| so snh vi in
p hnh rng ca U c do b to in p rng ca to ra.
Nu Ua > Uc th u ra SS| c mc 1.
Nu A < Uc th u ra SS| c mc 0.
B so SS2 so snh in p rng ca U c vi t. Nu U c > 0 th u ra SS2
nhn gi l .
Hnh 8-2. Chuyn i theo phng php m xung n gin
C hai in p u ra SSj v SS2 l Uss v Uss u c a n

mch AND, - in p Uq u ra mch AND t l vi ln ca u^.
Tip n xung Uq a n mch ANDj, u vo th 2 l xung nhp.
T u ra mch AND2 tn hiu c a n b m xung. S lng
xung c m t l vi in p Ain p rng ca Uc = ^
Ti thi im t =
194
JUch-dt=
th U c = A
13-250BTKTOlNT.B
S xung nhp c m ong khong thi gian
Z = f .t = * .^ .R C
ch
Trong
l tn s xung nhp, Hz.
*
Chuyn i s tng t (DAC), l qu trnh chuyn i ngc t tn
hiu s p sang tn hiu tng t ^. Hai phng php c s dng rng
ri l phng php thang in tr v phng php mng in .
- Phcmg php thang in (hnh 8-3)
Uch
2R
A A A r~
f~ i
b2N-'R
Hinh 8-3. Chuyn i DAC theo phung php thang in tr
in p cn chuyn i Uj3 a n iu khin kho in t, hai trng

thi l v 0 ng vi s hng bit ca Ud v ni qua mt thang in tr, tr s
ca chng c phn b theo m nh phn ri a n u vo b khuch
i thut ton.
in p u ra c xc nh theo biu thc
2R
A = ^ - c h b,. r+h,2-^+ .... +b2 ^)
Biu thc b|.2 + ba .2'^ +...+ b.2^ l mc chun ho; b|, ba.. b l cc
s hng nh phn, ng vi gi tr 1 hay 0 ong dy s nh phn Up.
195
in p ton thang ng vi iu kin khi tt c cc s hng \

gi tr 1 .
Amax =
u c
(1 2 -'+ l.2-^+1.2-^+...+ l .2-^)
Mc lng t c gi nh nht, ng vi b = 1 cn tt c cc s hng

cn li u bng 0 .
2R
R
* Chuyn i DA theo phng php mng in tr R-2R (hnh 8-4)
R.,
1
Hlnh 8-4. Chuyn i DA theo phng php mng in tr
in p analog A ph thuc vo tn hiu s Up, v c xc nh theo

biu thc
= Ua = ^ .U ,,( b ,. 2 -+b2.2 -^+ b32-^+...+b2 -^)
Trong ch l in p chun;
b, b, b ,... b l cc s hng nh phn ca tn hiu s U d ng vi gi tr
1 hay 0 .
V d: Ud = 1101 th b, = 1;
= 1, ba = 0,
= 1.
in p ra cc i khi tt c cc bit b,, u c tr s bng 1.
196
K
Bit c ngha nh nht hay mt mc lng t ng vi b = 1 cn tt c
cc bit bji cn li u bng 0 .
II
I
^ramin =^L
SB =
N T T 9;N

Bi tp 8-1. Mt h x l chuyn i AD, tn hiu tcng t U a c tn
s t 0 n 2,5 kHz. Gi s tc ly mu thc t ln hn tn s ly
mu cc tiu theo l thuyt l 50%.
a) Xc nh tn s ly mu.
b) Xc nh chu k ly mu.
c) Nu s dng chuyn i AD vi N = 8 bit, hy xc nh i-ng mi bit.
Bi gii
a) Tn s ly mu nh nht theo i thuyt
f^samm
= = 2 F max
.
y tn s y mu thc t c chn ln hn l thuyt l 50%
4 = ,5 .2 F ,,= l,5.2.2,5 = 7,5kHz
b) IU k ly mu T c xc nh
T = ^ = L -= 133,3 Jis
L
7500
^
c) B chuyn i AD c kh nng bin i mi tr s tng t thnh
mt t khng vt qu 133,3M-s.
133,3us
133,3s
rng bit X = =
= 16,66 |IS.
Bi tp 8-2. Tn s ly mu ca chuyn AD ong cng ngh ghi a

compact (CD) l 44,1kHz
197
a) Xc nh tn s cao nht ca tn hiu tong t theo l thuyt khi to

li tn hiu s .
b) Xc nh thi gian bin i ti a ca b chuyn i AD (chu k ly
mu T).
Bi gii
a) T biu thc tn s ly mu
fsa=2F = 44,1kHz
Suy ra
= ^
= 22,05kHz
b) Tii gian bin i ti a ca b chuyn i AD

T= - i - = ---- = 22,6us
f..
44,210^
^
Bi tp 8>3: Mt b chuyn i AD dng chuyn i tn hiu tng
t c tn s 20Hz -i- 10.000Hz. Gi s tn s ly mu thc t c
chn ln hn tn s ly mu l thuyt 25%.
a) Xc nh tn s ly mu.
b) Chu k ly mu.
c) Nu dng b chuyn i AD 16 bit, hy xc nh rng bit cc i?
Bi gii
a) Tn s ly mu thc t
1,25.2F3, = 1,25.2.10.000Hz = 25.000Hz = 25kHz
b) Chu k ly mu
X = - ^ = L - =40jis
f.. . 25.10
c) rng bit cc i
_
T _
4 0 |1 S
X= = ____ = 2,5as
N 16 bit
198
(2^
Bi tp 8-4. Trong mt h chuyn i AD no , cn lng t ho tn

hiu thnh 2048 mc lng t.
Hy xc nh s bit cn thit N cho mi mu.
Bi gii
S mc lng t n ph thuc vo s bit lng t ho N v c xc nh

theo biu thc
n = 2'' = 2048
b) Nu in p mu U m = 2V, hy xc nh bc lng t Q.
Bi gii
a) S mc lng t
n = 2"^= 2' = 1024 mc
b) Bc lng t Q
Q=
2"'-l
2'-l
2
f = l,955mV.
1024-1
Bi tp 8 -6 . Mt b chuyn i AD 12 bit dng bin i tn hiu

analog c in p ton thang Ua = lOV.
Hy xc nh cc i lng sau y:
a) S' mc lcmg t.
b) Bc lng t.
c) Sai s lng t cc i.
d) Sai s lng t theo phn trm.
Bi g
a) S mc lng t
n = 2''= 2'^ = 4096 mc
b) Bc lng t
199
Q= -^ = -4 ^ =
2'^-! 2 " - l 4096-1
= 0,002442V
= 2,442mV
c) Sai s lng t cc i
E ,=
2 (2 '' -!)
= 0,001221 V
2 (2 " - 1 )
= l,221mV
d) Sai s lng t theo phn trm
E%= ^ . 1 0 0 % =
10
.100% = 0,1221 %
( 2 ^ Bi tp 8-7. Cho mch chuyn i AD song song (hnh 8-5)

Bit:
N = 3 bit
UcH = 7V
R = lOkQ
Gii trnh chuyn i cc in p sau sang tn hiu s Up

U a = IV; 3V; 5V v7V .
Bi gii
R
Mc in p U^h c phn p bi cc in tr R v ri a vo cc
u vo v b so theo cc mc lng t
0,5V; 1,5V; 2,5V; 3,5V; 4,5V; 5,5V; 6,5V.
Bc lmg t Q hay IU lsb c xc nh
Q = i U i ..= ^ = ^ = i v
gii trnh vic chuyn i cc in p trn sang tn hiu s thit lp
bng di y, trong din t mi quan h gia in p analog u^, cc tr
s cc u ra ca mch so v tn hiu s Ujj u ra.
200
uD
Hnh 8-5. Chuyn i AD song song
Mc
u ra cc mch so
Xo
X,
X.
X5
X4
X3
Xa
Ud
CBA
000
001
OiO
0 11
100
10 1
110
111
201
Ua= 1 V - U d = 001
Ua = 3 V ^ Ud = 0 1 1
Ua = 5 V -> U d = 1 0 1
Ua = 7 V -U d = 111
{ ^ ) Bi tp 8 -8 . Cho mch chuyn i AD theo phng php tim cn
(xp x ng) nh hnh 8-6.
Bit:
N = 4bit
Uax=6 V
Xc nh U|J cho cc in p cn chuyn i sau:
UA = 0,6V v A =l,75V .
Hlnh 8*6. B chuyn i AD tim cn
Bi gi
a) Trc ht xc nh bc lng t hay bit nh nht
b) Trng hp chuyn i A = 0,6V

- So snh ln 1: Um = 0 -> Ua{0,6) > Um(0)
b = 1, mt xung c a
vo b m v m ho, Up - 0001, chuyn i ngc, c Um = 0,4V.
- So snh ln 2: A = 0,6V; U m = 0,4V
Ua >
B = 1, thm 1 xung vo b m D = 0010 chuyn i
ngc, c U m = 0,8V.
202
- So snh ln 3. A = 0,6; U m = 0,8

m dng, nh vy A = 0,6V - U d = 0010.
< U m u ra B = 0, qu nh
c) Trng hp A =1.75 V
- Vng 3: U a = 1,75; Um = 0,8V -) A > U m -> B = 1 v U d = 0011,
chuyn i ngc DAC, c U m = 1,2V.
- Vng 4: Ua = 1,75V; Um = 1,2V
i ngc DAC, c Um = 1 ,6 V.
- Vng 5: U a = 1,75V; U m = 1,6V
chuyn i ngc DAC, c U m= 2,0V.
- Vng 6 ; Ua = 1,75V; Um = 2,0V
> Um v Up = 0100, chuyn

> u
B = 1 v Up = 0101,
A < Um
B = 0 qu trnh
chuyn i dng.
Vy U a = 1,75V ng vi D = 0101.
Bi tp 8-9. Cho mch chuyn i DAC theo phng php thang in
tr nh hnh 8-7.
Bit: N = 4 bit, R n = 20kQ; R = 20kQ; u,h = 3V
a) Hy xc nh bit c ngha nh nht ILSB.

b) Tnh A nu U d = 0110; D = 0011.
c) Tnh in p ton thang.
.
160kf
'4
Hnh 8-7. Chuyn i DAC theo phuong php thang in tr
203
Bi gii
a) Bit c ngha nh nht ng vi 04 = 1 cn tt c b| = b 2 =
LSB
ch
20
.3.2^ =0,375V
b) Theo biu thc tnh u,

u*
2R
(b, .2 -' + b , 2 -= + b , 2 -> + 0 , 2 - )
Vi Ud = 0110 c ngha l b, = 64 = 0
b3 = b3 = l
thay tr s ca b vo
2.20
2.20
= 2,25V
U , = ^ . 3 ( l . 2 - + 1 .2 - ) = ^ . 3
^ 20
> 20
v U d
= 0011 - ^ b , = b 2 = 0 ;b j = b 4 = 1
2.20
2.20
20
'
20
J_
= 1,125V
^8"^16
c) Xc nh in p ton thang
in p ton thang ng vi trng hp b, = 2 = 63 = 4 = 1
U
2R,
R
2.20 1 1 1 1
20
= 5,62V
16
Bl tp 8-10. ging nh bi 8-9. Nhng N = 8 bit.

a) Hy xc nh bit c tr s nh nht IU lsb.
b) Xc nh A nu bit
D = 10000000
U d = 10101010

Bi gii
a) Xc nh bit c tr s nh nht
204
=0
U lsb ng vi trng hp bg = 1 , cn tt c cc b|j u bng 0
2.20
= 0,0234V
.3
20 U 5 6 j
1
2 j
b) Nu Ud = 10000000, c ngha l b, = 1; b = 3 = b4= b , = be =

2R
2.20
U , = ^ u 4 i. 2 - ) = ^ . 3
20
i
u
= bg = 0.
= 3V
Nu U d = 10101010 c ngha b, = bj = bj = b, = 1
b-, =
2R
+ 1 .2 -^ + 1 .2 '" + 1 .2 ' )
2.20
20
c)
= b = bo = 0
.3
32
)
= 3,984V
128j
in p ton thang ng vi trng hp tt c cc s hng b|( u c tr
s l 1 .
( 1 .2 -' + 1 .2 '^ + 1 .2 '^ + 1 .2 -^ + 1 .2 *" + 1 .2 -* + 1 .2 '" + 1 .2 ')
2.2 J 1 1 1 1 1
= - .3 + - + - + +
2 ,2 4 8 16 32 64
'
-----+ ----- = 5,9765V

128 256,
( 0 ) Bi tp 8-11. B chuyn i DAC 4 bit nh hnh 8-7

Bit u,h = 3V
R = lOkQ
a) Hy xc nh tr s Rn ng vi U = 1001 th U a = 2,2V.
b) Xc nh in p ton thang cho trng hfp .
Bi gii
a) TTieo biu thc
u = ^ u * ( b , r ' + b ,2 -' + b ,2->+b,2-')
y
b| = b = 1
bj = bj = 0
205
2R
U , = 2 , 2 V = ^ U , , ( l . 2 - + 1.2-^)
2,2V = ^ U ch
R
Suy ra
2,2R
1 1
2U ch - +
2 16 J
2 2.10
= 6,518kQ
2 .3 ^
16
b) Xc nh in p ton thang
2R
^
U ,, (1.2-' +1.2-' +1.2-' +1.2-")
R
U^
2.6,518
10
= 3,666V
.3 1 1 1 1
^2 4 8 16;
Bi tp 8-12. Cho mch chuyn i DAC 4 bit nh hnh 8-7.

Bit
Rn = 30kQ
Uch = 6V
a) Hy xc nh tr s in tr R ng vi U d = 1000 th A = 9V.
b) Xc nh bit c ngha nh nht U lsb v bit c ngha ln nht U msb
c) Xc nh in p ton thang.
Bi gii
a) Biu thc tnh A
U a = ^ u ^ ( b , 2 " +b22- +b,2-= +b.2-^)
Nu Ud = 1000 th b, = 1,02 = 03 = 4 = 0
ch
R=
R|J.U
.Suyra R = L_i:h
I2j
30.6
A
=20kn.
b) Bit c ngha nh nht khi 04 s= 1 cn b| = 2 = ba = 0
206
2R
_4
2.30 ^ 1
1U lsb= ^ = ^ U . u .1 .2 ^ = ^ = ^ . 6 . = 1,125V
R
20
16
Bit c ngha ln nht U m s b ng vi trng hp b = 1, bj = bj= b4 = o

TJ
'
tj
1 -i-i
2 .3 0 g 1
"^0"
qy
c) in pton thang, ng vi trng hp b| = bj = bj =s 64 =s
^
2 .3 0
20
( 1 .2" +1.2-2 +1.2^ +1.2"^)

1 1 1 1
.6 ---h------------ = 16,875V
u
16j
( ^ ) Bi tp 8-13. Cho mch chuyn i ADC mng in tr R-2R, 4 bit

nh hnh 8-8.
Bit: R = lOkD; Rp = lOkQ
Uch=10V
Hy xc nh Rn :
a )u ^ B = 0,5V
b)
hg vi U d = 1000 th U a = 6V
c) in p ton thang
2R
= lOV
R
>-A/V
u=u.
ra
A
uch
1
Hnh 8-8. Chuyn i DA tieo phUdng php mng in tr R-2R
207
Bi gii
a) Theo biu thc xc nh in p ra U a
u A =
( b, , 2 - +
Bit c ngha nh nht
IU lsb
ng vi trng hp 04 =
1, b | =
, 2 - " + b 3 .2 -=
= bj = 0
U a = U ,^ = 0 ,5 V = ^ .U ,,,2
Suy ra
R N.,=
10.2
Ue.-2
b) Uj) = 1000, ikig vi b = 1; b2 = 3 =

ln nht Ui = U^SB = 6V
= 0. y chnh l bit c ngha
U A = - ^ U ,,.2 - '.S u y r a
R
R,
A = 6 = ^ U , h . 2 6R
R m-
-1
U ch-2
6R.2
U ch
6.10.2
= 12kQ
10
c) in p ton thang ng vi trng hp

| ->t)3 1
U ^=10V
R]SJ -
lOR
Uch|2 + 2 ' + 2 ' + 2 )
2-*+2"^+2"^+2"'
10.10
- ^ = 10,66kQ
1
'1
1
1
10 ------ 1------ ------------ _ -----U 4 8 16;
( 2 ^ Bi tp 8-14. B chuyn i DAC mng in tr R-2R 8 bit.

Bit;
Rn = 20kQ
UcH = 6V
IU
a) Hy xc nh in tr R v 2R bi c tr s nh nht
lsb = 0,046875V.
208
+b,.2-
b) Xc nh bit c tr s ln nht U^SB trong ttTng hp .

Bi gii
a) Bit c ngha nh nht ng vd trng hp bg = 1. Cc s hng
li u bng 0.
cn
U lsb = ^ U . j .2-* =0,046875

R = - ^ U ^ . 2 ' * = .6 .4 -= 1 0 k n
Ulsb *
0,046875 2
Suyra
2R = 20kfi.
b) Bit c ngha ln nht U msb ng vi trng hp b, = 1, cq s hng b
cn li u bngO.
U msb = % - U , h.2 - = ^ . 6 . = 6V
R
10 2
c>in p ton thang ng vi trng hp b| = 2 = bj = b4 = bs = bg = b7
= b=l
=Bu
= ^ .6 .
10
. (2^+ 2-2 + 2'^ + 2^ + 2"^ + 2"^-+ 2^ + 2"^)
f1
1 1
16
32
64
128
1 1
256 j
= 11,953V
( ^ ) Bi tp 8-15. C3io mch chuyn i DA nh hnh 8-8.

Bit:
N = 4bit
R =10k0
R N =10k
a) Hy xc nh in p chun Ud, cn thit khi U = 1100 A = 4,5V.
b)TnhU^B.
c)
Tnh in p ton thang.

Bi gii
a) in p ra c xc nh ieo biu thc

14.250BTKTlNT-A
209
(b , 2 - +h 2 2 - 2 +bs 2 - + b 42 -<)
V
u ,= |iu ,,( r U 2 - ^ )
Suy ra
U aR
10.4,5
ch =
RN
1
4
---
1------------
r = 6V
)
b) Xc nh bit c ngha nh nht

4= 1; b, =b 2 = b3 = 0
IUlsb
= .6.2"^ =0,375V
LSB =
R Uch2"
ch
V
c) in p Ua ton thang, ng vi trng hc^ b| =

a =
R
,-3
N u ^ j2 " +2"2+2-^+2R
10 u
(2^
= bj = 04 = 1
16j
= 5,625V
Bi tp 8-16. Oio mch chuyn i DA nh hnh 9-8 nhung N = 5 bit;

U ,h=10V ;R =10kQ .
Hy xQ nh R n cn thit t c cc iu kin sau:
a) ig vi bit c ngha nh nht th A= 200mV.
b) Khi in p U d = 10001 th A = 5V.
c) in p ton thang A = 12V.
Bi gii
a) Bt c ngha nh nht khi bj = 1; bj = 02 = ba = 4 = 0
U ^ = 0 ,2 V = .|tU ,,.2 -=
Suy ra
210
10.2-*
14-250BTKTiNT.B
b) Khi U d = 10001 ng vi b, = bs = 1
t>2 = bj = b4 = 0
U ,= 5 V = ^ U ^ ( 2 - '+ 2 - = )
Suy ra
5.10
= 9,412kQ
U . 1^
10
2 32 j
R = -----^
U.4 2 - + 2 - )
c) in p ton thang A = 12V ng vi trng hp Q = 11111

b = bj = bj = 4 = bs = 1
(2- + 2'^ + 2'^ + 2-^ + 2-^ )
= 12V =
Suy ra
=
ch
10
U ,R
1 1 1 1
p
------ 1--------- ---------1------------1--------U 4 8 16 32 j
12.10
= 12,387kQ
^ ---------1 1 ---------1
1 1---------------------1
2
16
32)
Bi tp 8-17. Cho mch chuyn i DA 8 bit dng IC DA806 (hnh 8-9).

Gi s: R ,4 = R ,5 = r = Rn = lOkQ
Ukbf = U,, = 5,12V
a) Hy xc nh bit c ngha nh nht ILSBb) Xc nh in p ton thang.
B gii
a) Bit c ngha nh nht ng vi bg = 1 cn tt c cc s hng b|f cn li
u bng 0.
Ua
=U.CB
= ^ U .ch. 2 * = .5,12.2
=0,02V
A
LSB
*
b) in p ton thang
ng vi trmg hp bj = bj = bj = 4 = bs = bg
~ ^7 = bg = 1.
211
1_ NC
2 - GND
3
15V
Comp _ 1 6 p
15. . ' 5
u ref
DA806
A,(MSB)
u rcf+
12V
(LSB)Ag ^12
A, - 1 !
_10
_9 J
6^ Aa
7_
8_
8bitU
Rn
vw
Hnh 8-9
= i .5 ,1 2
10
(2-* + 2'^ + 2'^ + 2"* + 2'* + 2"* + 2 + 2'*)

1
2
1
4
1 1
8 16
+
^ H H----h
1 1 1
1
H------h ---- 1--- = 5,IV
32 64 128 256;
Bi tp 8-18. Cho mch chuyn i AD 801 8 bit nh hnh 8-10

Bit U|, U j... Ug l tm mc in p ng vi tm tr s
00000001 00000010 00000100 00001000 00010000 00100000

01000000, 10000000.
Hy tnh nhig in p .
Bi gii
i vi mi trong 8 in p c tnh y ch c mt bit duy nht ng

vi mc 1, cn cc bit khc ng vi mc 0.
212
R=10k
VVVr-
20
12.
Start
:IN
5-
-r- 7
AD 801
U iN U iN .
AGND
uch
i l O j . DGND
3 * 5,12V
DBO ^18 LSB>

17
DBl
16
DB2
^15
>u,
-1 4
-1 3
-.12
DB7 V I MSB
Hinh 8-10. Mch chuyn AD 801
00000001
00000010
00000100
00001000
00010000
00100000
01000000
10000000
= 5,12V.2* = 20mV
U2 = 5,12V.2- = 40mV
U3 = 5,12V.2 = 80mV
4 = 5,12 v.2'^= 160mV
Us = 5,12 v.a"* = 320mV
Us = 5,12 V.2^= 640 mV
7= 5,12V.2-2= 1280mV
Ug = 5,12 v.2'= 2560mV
U,
->
->
->
->
213
TI LIU THAM KHO

1. Phm Minh H, 2003. K thut mch in t, NXB Khoa hc v K thut.
2. ng Vn Chuyt (Ch bin), 2004. Gio trnh K thut mch in t,
NXB Gio duc.
3. Nguyn Vit Nguyn, 2004. Gio trinh Linh kin in t v ng dng,

NXB Gio dc.
4. Nguyn Thanh Tr, TTii Vih Hin, 2005. Gio trnh in t dn dng,
NXB Gio dc.
5. Xun Th, Nguyn Vit Nguyn, 2004. Bi tp K thut in t,
NXB Gio dc.
6. William D.Stanley, 1990. Operational dmplifiers with linear integrated

circuits, Macmilan Publishing Company.
7. L Vn Doanh, V Thch Sn, 1994. K thut in t (Phn Bi tp),
NXB Khoa hc v K thut.
214
MC LC
Li ni u
Chcmg 1. it
1.1. Tm tt phn l thuyt
1.2. Phn bi tp c li gii
1.3. bi tp
Chng 2. Transistor lng cc v transistor trng
2.2. Phn bi tp co ld gii
Qing 3. Cc mch khuch i tn hiu b
3.3. bi tp
Chcmg 4. Mch khuch i cng sut
4.2. Phn bi tp co li gii
Chng 5. B khuch i thut ton
Chng 6. Ngun n p
Chng 7. Mch dao ng
7.2. Phn bi tp c ld gii
Chng 8. Mch chuyn i tng t - s v s - tng t
Ti liu tham kho
Trang
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250 Bai Tap Ky Thuat Dien Tu 5936

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NGUYN THANH TR - THI VNH HIN

NH XUT BN GIO DC VIT NAM

- k = 1,38.10"^^ , hng s Boltzman;

b) Hn ch bin in p mt gi tr ngng cho trc.

Cn khi' tn s tn hiu cao, cn ch ti gi tr in dung k sinh

Bi tp 1-2. Xc nh in tr mt chiu Rj3 ca it chnh lu vi c

tp 1-3. Xc nh in tr xoay chiu

0,4 0,60,7 0,8

4 ) Bi tp 1-4. Cho c tuyn V-A ca mt it nh trn hnh 1-2. Xc

Bi tp 1-5. Cho mch in dng i nh hnh l-3a v c tuyn V-A

Ti I|J = 0 la c l = U|J + (OA).R,

u =I.R, =I,.R, =9,25.10-M 0 =9,25V

= E - U do=10V -0,7V =9,3V

7 ] Bi tp 1-7. Tnh ton lp li cho bi tp 1-5 bng cch tuyn tnh ho

nh trn hnh 1-6.

( 8 j Bi tp 1-8. Tnh ton lp li cho bi tp 1-6 bng cch tuyn tnh ho

Dng dng li mt chicu

Dng in chy qua it I|) = 1,;, (dng

Bi tp 1-11. Cho mch in dng it nh hnh 1-10. Xc nh in

Dng in qua cc it D|,

(^1^ Bi tp 1-12. Cho mch in dng it nh hnh 1-11

Id U o,=OV I=I,,=I,=0A =I,

Do D| c phn cc thun, cn Dt c phn cc nghch, ta v li s

u D-, = E -U D,,-U ^ra = I 2 -0 -0 = 1 2 V .

(^1^ Bi tp 1-13. Cho mch in dng it nh hnh 1-13

Qin in p ing cho it D loi Si 0,7V ta v li s trn nh hnh 1-14.

in p U|, 2 tng ng trn R|, R, s l:

loi Si 0,7V. S 1-15

Nu chn D v D, ging nhau ta c dng qua chng s nh nhau v

in p ra chnh l in p thng ri trn it D| v D,

Bi tp 1-15. Cho mch in dng it nh hnh 1-17. Xc nh dng

Bi tp 1-16. Cho mch in dng it nh hnh 1-19. Xc nh in

17 ) Bi tp 1-17. Cho mch in dng it,nh trn hnh 1-21. Xc nh

Theo nh lut Kirchoff v in p

Ur = E -U c^-U ^=20-0,7-0,7= 18,6V

Theo nh lut Kirchoff v dng in nt ta c;

Chn ngng thng bng 0,7V cho D| v D2, khi s 1-24 c v

in p ra chnh l in p thng cho it D 2 v bng Up . Vy ta c:

Dien p ra mt chiu tren tai

Ud, = 0,318U, = 0,318.20V = 6,36V

Nh vy so vi trng hp D l tcmg trong bi 1-20 in p ra gim

i vi trng hp it thc, in p ra mt chiu gim 0,22V tng

thng, kho vi tng 1/2 chu k ca tn hiu vo. V d: vi 1/2 chu k

Gi thit it D l tng, d dng nhn thy D lun lun thng vi 1/2

^=20V +5V =25V

^ 2^ Bi tp 1-25. Cho mch in dng it nh hnh 1-35. V dng in

Uy = -lOV it D lun lun trng thi kho,

hnh 1-37 v in p ra trn ti R lc s l:

U^, = Ir.R = O.R = o v

Bi tp 1-26. Cho mch in dng it

Trong khong thi gian khi Uy > 4V,

TTieo nh lut Kirchoff v in p

Vi U v > 3,3V it D lun lun trng

Dng in p ra c biu din

tp 1-28. Cho mch in dng

b) Lp li tnh ton trong cu a, khi thay R, = 3kQ

Ur= Uv - u, = 16 - 8,73 = 7,27V

V in p t ln zener u = 12V > 2 = lOV nn zener s c m

Bi tp 1-29. Cho mch

b) Xc nh cng sut tiu tn cc i trn zener.

Ch : Khi dng qua zener cc tiu (l thuyt th

trong trng hp gi tr R, c xc nh chnh l R,j in p ra trn

Dng in cc tiu trn ti s l:

b) Cng sut tiu tn cc i trn zener s l;

Pzmax = u z, . Zmax. = lOV . 32mA = 320mW