PD - 91645A

IRF7389
HEXFET Power MOSFET
l
l
l
l
l

Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated

S1

N-CHANNEL MOSFET
1
8

D1

G1

D1

S2

D2

D2

G2

P-CHANNEL MOSFET

Description

N-Ch

P-Ch

30V

-30V

VDSS

RDS(on) 0.029 0.058

Top View

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.

SO-8

Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted)

Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current

TA = 25C
TA = 70C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)
TA = 25C
Maximum Power Dissipation
TA = 70C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range

V DS
V GS

IDM
IS

EAS
IAR
EAR
dv/dt
TJ, TSTG

Maximum
P-Channel

N-Channel
30

Units

-30
20

7.3
5.9
30
2.5

-5.3
-4.2
-30
-2.5
2.5
1.6

82
4.0

W
140
-2.8

0.20

mJ
A
mJ
V/ ns

3.8

-2.2
-55 to + 150 C

Symbol

Limit

Units

RJA

50

C/W

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient

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02/25/04

IRF7389
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V (BR)DSS

Drain-to-Source Breakdown Voltage

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

V GS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

I DSS

Drain-to-Source Leakage Current

I GSS

Gate-to-Source Forward Leakage

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min.
30
-30

1.0
-1.0

N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

Typ. Max.

0.022
0.022
0.023 0.029
0.032 0.046
0.042 0.058
0.076 0.098

14

7.7
1.0
-1.0

25
-25
100
22
33
23
34
2.6 3.9
3.8 5.7
6.4 9.6
5.9 8.9
8.1 12
13
19
8.9 13
13
20
26
39
34
51
17
26
32
48
650
710
320
380
130
180

Units
V
V/C

V
S
A
nA

nC

ns

pF

Conditions
VGS = 0V, ID = 250A
VGS = 0V, ID = -250A
Reference to 25C, ID = 1mA
Reference to 25C, ID = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
VDS = VGS, I D = 250A
VDS = VGS, I D = -250A
VDS = 15V, I D = 5.8A
VDS = -15V, I D = -4.9A

VDS = 24V, V GS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, T J = 55C
VDS = -24V, V GS = 0V, TJ = 55C
VGS = 20V
N-Channel
I D = 5.8A, VDS = 15V, VGS = 10V
P-Channel
I D = -4.9A, V DS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0,
RD = 15
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0,
RD = 15

N-Channel
V GS = 0V, V DS = 25V, = 1.0MHz
P-Channel
V GS = 0V, V DS = -25V, = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter
IS

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch

Min. Typ. Max. Units

Conditions

2.5

-2.5
A

30

-30
0.78 1.0
TJ = 25C, IS = 1.7A, VGS = 0V
V
-0.78 -1.0
TJ = 25C, IS = -1.7A, VGS = 0V

45
68
N-Channel
ns

44
66
TJ = 25C, I F =1.7A, di/dt = 100A/s

58
87
P-Channel

nC
TJ = 25C, I F = -1.7A, di/dt = 100A/s

42
63

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t 10sec.
N-Channel ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C
P-Channel I SD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C
N-Channel Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A.

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IRF7389

N-Channel
100

100

VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V

VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP

I D, Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

10

3.0V

20s PULSE WIDTH

TJ = 25C
A

1
0.1

10

3.0V

20s PULSE WIDTH

TJ = 150C
A

10

0.1

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

Fig 2. Typical Output Characteristics

100

ISD , Reverse Drain Current (A)

100

I D , Drain-to-Source Current (A)

VDS, Drain-to-Source Voltage (V)

TJ = 25C
TJ = 150C
10

VDS = 10V
20s PULSE WIDTH

1
3.0

3.5

4.0

4.5

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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5.0

TJ = 150C
10

TJ = 25C

VGS = 0V

1
0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD , Source-to-Drain Voltage (V)

Fig 4. Typical Source-Drain Diode

Forward Voltage

IRF7389

RDS (on) , Drain-to-Source On Resistance ()

RDS(on) , Drain-to-Source On Resistance

(Normalized)

2.0

N-Channel

ID = 5.8A

1.5

1.0

0.5

0.0
-60 -40 -20

VGS = 10V
0

20

40

60

0.040

V GS = 4.5V

0.036

0.032

0.028

0.024

V GS = 10V

0.020

80 100 120 140 160

A
0

10

TJ , Junction Temperature ( C)

E AS , Single Pulse Avalanche Energy (mJ)

RDS (on) , Drain-to-Source On Resistance ()

0.10

0.08

0.06

I D = 5.8A
0.04

0.02

0.00
6

12

V GS , Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Voltage

40

Fig 6. Typical On-Resistance Vs. Drain

Current

0.12

30

I D , Drain Current (A)

Fig 5. Normalized On-Resistance

Vs. Temperature

20

15

200

TOP
BOTTOM

160

IID
D
1.8A
3.2A
4.0A

120

80

40

0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

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IRF7389

N-Channel
20

V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd

900

VGS , Gate-to-Source Voltage (V)

C, Capacitance (pF)

1200

Ciss
Coss

600

Crss

300

A
1

10

100

ID = 5.8A
VDS = 15V

16

12

0
0

10

20

30

40

QG , Total Gate Charge (nC)

VDS , Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Thermal Response (Z thJA )

100

D = 0.50

10

0.20
0.10
0.05

PDM

0.02

t1

0.01

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA

SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001

0.0001

0.001

0.01

0.1

10

100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7389
100

P-Channel

100

VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V

VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

TOP

10

-3.0V

20s PULSE WIDTH

TJ = 25C
A

1
0.1

10

-3.0V

20s PULSE WIDTH

TJ = 150C
A

1
0.1

10

Fig 12. Typical Output Characteristics

100

-ISD , Reverse Drain Current (A)

-I D , Drain-to-Source Current (A)

10

Fig 13. Typical Output Characteristics

100

TJ = 25C
TJ = 150C
10

V DS = -10V
20s PULSE WIDTH

1
3.0

3.5

4.0

4.5

5.0

5.5

6.0

-VGS , Gate-to-Source Voltage (V)

Fig 14. Typical Transfer Characteristics

-VDS, Drain-to-Source Voltage (V)

-VDS, Drain-to-Source Voltage (V)

TJ = 150C
10

TJ = 25C

VGS = 0V

1
0.4

0.6

0.8

1.0

1.2

1.4

-VSD , Source-to-Drain Voltage (V)

Fig 15. Typical Source-Drain Diode

Forward Voltage

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IRF7389

RDS(on) , Drain-to-Source On Resistance

(Normalized)

2.0

RDS(on) , Drain-to-Source On Resistance ( )

P-Channel

ID = 4.9A

1.5

1.0

0.5

0.0
-60 -40 -20

VGS = 10V
0

20

40

60

0.6

0.5

0.4

0.3

0.1

VGS = -10V
0.0

80 100 120 140 160

TJ , Junction Temperature ( C)

10

20

Fig 17. Typical On-Resistance Vs. Drain

Current

0.16

0.12

I D = -4.9A

0.04

0.00
0

12

15

-VGS , Gate -to-Source Voltage (V)

Fig 18. Typical On-Resistance Vs. Gate

Voltage

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EAS , Single Pulse Avalanche Energy (mJ)

300

0.08

30

-ID , Drain Current (A)

Fig 16. Normalized On-Resistance

Vs. Temperature

RDS(on) , Drain-to-Source On Resistance ( )

V GS = -4.5V

0.2

ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP

250

200

150

100

50

0
25

50

75

100

125

150

Starting TJ , Junction Temperature ( C)

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

IRF7389
VGS = 0V

Ciss = Cgs + Cgd + Cds

Crss = Cgd

1200

20

f = 1 MHz
SHORTED

-VGS , Gate-to-Source Voltage (V)

1400

P-Channel

C, Capacitance (pF)

Coss = Cds + Cgd

1000

Ciss

800

Coss

600

400

Crss

200

A
1

10

100

ID = -4.9A
VDS =-15V

16

12

0
0

10

20

30

40

QG , Total Gate Charge (nC)

- V DS , Drain-to-Source Voltage (V)

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

Thermal Response (Z thJA )

100

D = 0.50

10

0.20
0.10
0.05

PDM

0.02

t1

0.01

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA

SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001

0.0001

0.001

0.01

0.1

10

100

t1 , Rectangular Pulse Duration (sec)

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7389
Package Outline
SO8 Outline

DIM

D
-B-

0.25 (.010)

e
6X

A M

K x 45
e1

-C-

0.10 (.004)

0.25 (.010)

L
8X

A1

B 8X

C
8X

M C A S B S

MILLIMETERS

MAX

MIN

MAX

.0532

.0688

1.35

1.75

A1

.0040

.0098

0.10

0.25

.014

.018

0.36

0.46

.0075

.0098

0.19

0.25

.189

.196

4.80

4.98

.150

.157

3.81

3.99

E
-A-

INCHES
MIN

.050 BASIC

1.27 BASIC

e1

.025 BASIC

0.635 BASIC

.2284

.2440

.011

.019

0.28

5.80

0.48

6.20

0.16

.050

0.41

1.27

RECOMMENDED FOOTPRINT

NOTES:
0.72 (.028 )
8X

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

6.46 ( .255 )

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

1.78 (.070)
8X

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101

312

100

INTERNATIONAL
RECTIFIER
LOGO

XXXX

F7101

TOP

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DATE CODE (YWW)

Y = LAST DIGIT OF THE YEAR
WW = WEEK

PART NUMBER

WAFER
LOT CODE
(LAST 4 DIGITS)

BOTTOM

IRF7389
Tape & Reel Information

SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/04

10

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