Giao Trinh Linh Kien Dien Tu GTVT

GIO TRNH LINH KIN IN T
CHNG I. LINH KIN TH NG

Trng thi in ca mi linh kin in t c c trng bi 2 thng s:
in p u v cng dng in i. Mi quan h tng h i=f(u) c biu din
bi c tuyn Volt-Ampere.
Ngi ta c th phn chia cc linh kin in t theo hm quan h trn l
tuyn tnh hay phi tuyn. Nu hm i=f(u) l tuyn tnh (hm i s bc nht hay
phng trnh vi phn, tch phn tuyn tnh), phn t c gi l phn t tuyn
tnh (R, L, C) v c th p dng c nguyn l xp chng.
1
R
in tr: i .u
T in: i C.
du
dt
Cun dy: i
1
u.dt
L
Nu hm i=f(u) l quan h phi tuyn (phng trnh i s bc cao, phng

trnh vi phn hay tch phn phi tuyn), phn t c gi l phn t phi tuyn
(diode, Transistor).
2.1. in tr (Resistor)
Nh cp trong chng trc, dng in l dng chuyn di c hng
ca cc ht mang in v trong vt dn cc ht mang in l cc electron t
do. Cc electron t do c kh nng dch chuyn c do tc ng ca in p
ngun v trong qu trnh dch chuyn cc electron t do va chm vi cc nguyn
t nt mng v cc electron khc nn b mt mt phn nng lng di dng
nhit. S va chm ny cn tr s chuyn ng ca cc electron t do v c
c trng bi gi tr in tr.
2.1.1. nh ngha: in tr l linh kin cn tr dng in, gi tr in tr cng
ln dng in trong mch cng nh.
nh lut Ohm: Cng dng in trong mch thun tr t l thun
vi in p cp v t l nghch vi in tr ca mch.
Page 1

I
E
R
[E]: Volt (V)

[I]: Ampere (A)
[R]: Ohm ()
2.1.2. Cc thng s ca in tr
a. Gi tr in tr
Gi tr in tr c trng cho kh nng cn tr dng in ca in tr.
Yu cu c bn i vi gi tr in tr l t thay i theo nhit , m v
thi gian,in tr dn in cng tt th gi tr ca n cng nh v ngc li.
Gi tr in tr c tnh theo n v Ohm (), k, M, hoc G.
Gi tr in tr ph thuc vo vt liu cn in, kch thc ca in tr v
nhit ca mi trng.
R .
l
S
Trong : : in tr sut [m]

l: chiu di dy dn [m]
S: tit din dy dn [m2]
Trong thc t in tr c sn xut vi mt s thang gi tr xc nh. Khi
tnh ton l thuyt thit k mch, cn chn thang in tr gn nht vi gi tr
c tnh.
b. Sai s
Sai s l chnh lch tng i gia gi tr thc t ca in tr v gi tr
danh nh, c tnh theo %
Rtt Rdd
100%
Rdd
Page 2

Trong : Rtt: Gi tr thc t ca in tr
Rdd: Gi tr danh nh ca in tr
c. H s nhit in tr (TCR-Temperature Co-efficient of Resistor):
TCR l s thay i tng i ca gi tr in tr khi nhit thay i 1 oC,
c tnh theo phn triu
R / T
.106 ( ppm/ oC ) (parts per million)
R
Khi nhit tng, s lng cc electron bt ra khi qu o chuyn ng

tng v va chm vi cc electron t do lm tng kh nng cn tr dng in ca
vt dn. Trong hu ht cc cht dn in khi nhit tng th gi tr in tr
tng, h s 0 (PTC: Positive Temperature Co-efficient). i vi cc cht bn
dn, khi nhit tng s lng electron bt ra khi nguyn t tr thnh
electron t do c gia tng t ngt, tuy s va chm trong mng tinh th cng
tng nhng khng ng k so vi s gia tng s lng ht dn, lm cho kh nng
dn in ca vt liu tng, hay gi tr in tr gim, do c h s 0 (NTC:
Negative Temperature Coefficient). H s nhit 0 cng nh, n nh ca
gi tr in tr cng cao.
H s gc=
R
T
0oK
Hnh 2.1. nh hng ca nhit ti gi tr in tr ca vt dn

Ti mt nhit xc nh c h s nhit xc nh, gi s ti nhit T1
in tr c gi tr l R1 v h s nhit l 1 , gi tr in tr ti nhit T2:
R2 R11 1 T2 T1
Page 3

d.Cng sut ti a cho php
Khi c dng in cng I chy qua in tr R, nng lng nhit ta ra
P U .I I 2 .R
trn R vi cng sut:
Nu dng in c cng cng ln th nhit lng tiu th trn R cng

ln lm cho in tr cng nng, do cn thit k in tr c kch thc ln
c th tn nhit tt.
Cng sut ti a cho php l cng sut nhit ln nht m in tr c th
chu c nu qu ngng in tr b nng ln v c th b chy. Cng sut
ti a cho php c trng cho kh nng chu nhit.
Pmax
2
U max
2
I max
.R
R
Trong cc mch thc t, ti khi ngun cp, cng dng in mnh nn

cc in tr c kch thc ln. Ti khi x l tn hiu, cng dng in yu
nn cc in tr c kch thc nh do ch phi chu cng sut nhit thp.
2.1.3. Phn loi v k hiu in tr
a. in tr c gi tr xc nh
in tr than p (in tr hp cht Cacbon): c ch to bng cch
trn bt than vi vt liu cn in, sau c nung nng ha th rn, nn thnh
dng hnh tr v c bo v bng lp v giy ph gm hay lp sn.
Hp cht Carbon
Dy dn
Dy dn
Cc in cc
Hnh 2.2. in tr than p
Page 4

in tr than p c di gi tr tng i rng (t1 n 100M), cng sut
danh nh (1/8W-2W), nhng phn ln c cng sut l 1/4W hoc 1/2W. Mt
u im ni bt ca in tr than p chnh l c tnh thun tr nn c s
dng nhiu trong phm vi tn s thp (trong cc b x l tn hiu m tn).
in tr dy qun c ch to bng cch qun mt on dy khng
phi l cht dn in tt (Nichrome) quanh mt li hnh tr. Tr khng ph
thuc vo vt liu dy dn, ng knh v di ca dy dn. in tr dy qun
c gi tr nh, chnh xc cao v c cng sut nhit ln. Tuy nhin nhc im
ca in tr dy qun l n c tnh cht in cm nn khng c s dng trong
cc mch cao tn m c ng dng nhiu trong cc mch m tn.
Nichrome
Dy dn
Dy dn
Li cch in
Hnh 2.3. in tr dy qun

in tr mng mng: c sn xut bng cch lng ng Cacbon, kim
loi hoc oxide kim loi di dng mng mng trn li hnh tr. in tr mng
mng c gi tr t thp n trung bnh, v c th thy r mt u im ni bt ca
in tr mng mng l tnh cht thun tr nn c s dng trong phm vi
tn s cao, tuy nhin c cng sut nhit thp v gi thnh cao.
Mng mng
Dy dn
Dy dn
Hnh 2.4. in tr mng mng

Page 5

b. in tr c gi tr thay i
Bin tr (Variable Resistor) c cu to gm mt in tr mng than
hoc dy qun c dng hnh cung, c trc xoay gia ni vi con trt. Con
trt tip xc ng vi vi vnh in tr to nn cc th 3, nn khi con trt
dch chuyn in tr gia cc th 3 v 1 trong 2 cc cn li c th thay i. C
th c loi bin tr tuyn tnh (gi tr in tr thay i tuyn tnh theo gc xoay)
hoc bin tr phi tuyn (gi tr in tr thay i theo hm logarit theo gc xoay).
Bin tr c s dng iu khin in p (potentiometer: chit p) hoc iu
khin cng dng in (Rheostat)
Trc iu
khin
Con
trt
Vnh in tr
2
1
VR 3
potentiometer
2
1
VR 3
Rheostat
in tr nhit (Thermal Resistor -Thermistor):

Hnh 2.5. Bin tr
(VR)
L linh kin c gi tr in tr thay i theo nhit . C 2 loi nhit tr:
Nhit tr c h s nhit m: Gi tr in tr gim khi nhit tng (NTC),
thng thng cc cht bn dn c h s nhit m do khi nhit tng cung cp
nng lng cho cc electron nhy t vng ha tr ln vng dn nn s lng
ht dn tng ng k, ngoi ra tc dch chuyn ca ht dn cng tng nn gi
tr in tr gim
Nhit tr c h s nhit dng: Gi tr in tr tng khi nhit tng, cc
nhit tr c lm bng kim loi c h s nhit dng (PTC) do khi nhit
Page 6

tng, cc nguyn t nt mng dao ng mnh lm cn tr qu trnh di chuyn
ca electron nn gi tr in tr tng.
Nhit tr c s dng iu khin cng dng in, o hoc iu
khin nhit : n nh nhit cho cc tng khuch i, c bit l tng khuch
i cng sut hoc l linh kin cm bin trong cc h thng t ng iu khin
theo nhit .
in tr quang (Photo Resistor)
Quang tr l linh kin nhy cm vi bc x in t quanh ph nh sng

nhn thy. Quang tr c gi tr in tr thay i ph thuc vo cng nh
sng chiu vo n. Cng nh sng cng mnh th gi tr in tr cng gim
v ngc li.
Khi b che ti: R n.100k n.M
Khi c chiu sng: R n.100 n.k
Quang tr thng c s dng trong cc mch t ng iu khin bng
nh sng:(Pht hin ngi vo ca t ng; iu chnh sng, nt
Camera; T ng bt n khi tri ti; iu chnh nt ca LCD;)
2.1.4. Cch ghi v c cc tham s in tr
a. Biu din trc tip
Ch ci u tin v cc ch s biu din gi tr ca in tr: R(E) ;
K - K ; M - M ;
Ch ci th hai biu din dung sai:
F=1%
J=5%
G=2%
K=10%
H=2,5% M=20%
V d: 8K2J: R=8,2K; =5%

R=8,2K 0,41 K=7,79K 8,61K
Page 7

Hoc c th cc ch s biu din gi tr ca in tr v ch ci biu
din dung sai. Khi ch s cui cng biu din s ch s 0 (bc ca ly tha
10).
V d: 4703G: R=470K ; =2%
b. Biu din bng cc vch mu
i vi cc in tr c kch thc nh khng th ghi trc tip cc thng s
khi ngi ta thng v cc vng mu ln thn in tr.
3 vng mu:
2 vng u biu din 2 ch s c ngha thc
Vng th 3 biu din s ch s 0 (bc ca ly tha 10)
Sai s =20%
4 vng mu
Vng th 4 biu din dung sai (trng nh)
5 vng mu:
Vng th 5 biu din dung sai (trng nh)
Bng quy c m vch mu
Mu
en
Nu
Cam
Vng
Lc
Lam
Tr s Sai s
0
1
2
1%
2%
3
4
5
6
Page 8

Vch 3
Vch 1
Vch 2
Vch 5
Tm
Xm
Trng
Vng kim
7
8
9
-1
5%
Bc kim
-2
10%
Vch 4
2.1.5. ng dng
in tr c s dng trong cc mch phn p phn cc cho
Transistor m bo cho mch khuch i hoc dao ng hot ng vi hiu sut
cao nht.
in tr ng vai tr l phn t hn dng trnh cho cc linh kin b ph
hng do cng dng qu ln. Mt v d in hnh l trong mch khuch i,
nu khng c in tr th Transistor chu dng mt chiu c cng tng i
ln.
c s dng ch to cc dng c sinh hot (bn l, bp in hay
bng n,) hoc cc thit b trong cng nghip (thit b sy, si,) do in
tr c c im tiu hao nng lng di dng nhit.
Xc nh hng s thi gian: Trong mt s mch to xung, in tr c
s dng xc nh hng s thi gian.
Phi hp tr khng: tn hao trn ng truyn l nh nht cn thc
hin phi hp tr khng gia ngun tn hiu v u vo ca b khuch i, gia
u ra ca b khuch i v ti, hay gia u ra ca tng khuch i trc v
u vo ca tng khuch i sau.
2.2. T in
2.2.1. nh ngha
T in gm 2 bn cc lm bng cht dn in c t song song vi
nhau, gia l lp cch in gi l cht in mi (giy tm du, mica, hay gm,
Page 9
Bn cc
kim loi
Lp in mi
(khng kh)

khng kh). Cht cch in c ly lm tn gi cho t in (t giy, t du, t
gm hay t khng kh).
C
K hiu
Nu in tr tiu th in nng v chuyn thnh nhit nng th t in tch

nng lng di dng nng lng in trng, sau nng lng c gii
phng. iu ny c th hin c tnh tch v phng in ca t in.
2.2.2. Cc tham s ca t in
a. in dung ca t in
Gi tr in dung c trng cho kh nng tch ly nng lng ca t in.
C
o S
d
Trong :
: H s in mi ca cht cch in
o=8,85.10-12(F/m): Hng s in mi ca chn khng
S: Din tch hiu dng ca 2 bn cc
d: Khong cch gia 2 bn cc
in dung c n v l F, tuy nhin trong thc t 1F l gi tr rt ln nn

thng s dng cc n v khc:
1F=10-6F; 1nF=10-9F; 1pF=10-12F
Mt s h s in mi thng dng:
Chn khng
=1
Khng kh
=1,0006
Gm
=30-7500
Mica
=5,5
Du
=4
Giy kh
=2,2
Polystyrene
=2,6
Page 10

Gm
(a) C=200pF vi cht in mi l khng kh
(b) C=1,5F vi cht in mi l gm
b. Sai s: L chnh lch tng i gia gi tr in dung thc t v gi

tr danh nh ca t in, c tnh theo %
Ctt Cdd
Cdd
Ctt: in dung thc t

Cdd: in dung danh nh
Ty theo yu cu ca mch m dung sai ca t in c gi tr ln hay nh.
c. Tr khng ca t in
Tr khng ca t in c trng cho kh nng cn tr dng in xoay chiu
ca t in
Zc
Xc
1
j. X c
j 2fC
1
: dung khng ca t
2fC
f 0 : Z c : h mch i vi thnh phn mt chiu

f : Z c 0 : ngn mch i vi thnh phn xoay chiu
d. H s nhit ca t in (TCC Temperature Co-efficient of Capacitor)

L thay i tng i ca gi tr in dung khi nhit thay i 1oC,
c tnh theo o/oo:
TCC
T 10 6 ( ppm / oC )
C
TCC cng nh th gi tr in dung cng n nh, do mi loi t ch hot

ng trong mt di nhit nht nh.
Page 11

e. in p nh thng
Khi t vo 2 bn cc ca t in p mt chiu, sinh ra mt in trng
gia 2 bn cc. in p cng ln th cng in trng cng ln, do cc
electron c kh nng bt ra khi nguyn t tr thnh cc electron t do, gy nn
dng r. Nu in p qu ln, cng dng r tng, lm mt tnh cht cch
in ca cht in mi, ngi ta gi l hin tng t b nh thng. in p
mt chiu t vo t khi gi l in p nh thng.
Khi s dng t cn chn t c in p nh thng ln hn in p t vo
t vi ln. in p nh thng ph thuc vo tnh cht v b dy ca lp in
mi. Cc t c in p nh thng ln thng l cc t c kch thc ln v cht
in mi tt (Mica hoc Gm).
f. Dng in r
Thc t trong cht in mi vn tn ti dng in c cng rt nh,
c gi l dng r, khi c th coi t in tng ng vi mt in tr c
gi tr rt ln, c M.
Dng r
i C
du
dt
2.2.3. Phn loi v k hiu

a.T c in dung xc nh
T in c phn chia thnh 2 dng chnh: T khng phn cc (khng c
cc tnh) v t phn cc hoc cng c th phn loi theo cht in mi.
T giy ( Paper Capacitors): T giy l t khng phn cc gm cc l
kim loi xen k vi cc lp giy tm du c cun li theo dng hnh tr. in
dung C=1nF 0,1F, in p nh thng ca t giy c khong vi trm Volt.
Hot ng trong di trung tn.
K hiu:
Page 12

C
L kim
loi
L kim loi
Lp in mi
T gm (Ceramic Capacitors): T gm l t khng phn cc c sn

xut bng cch lng ng mng kim loi mng trn 2 mt ca a gm hoc cng
c th mt trong v mt ngoi ca ng hnh tr, hai in cc c gn vi
mng kim loi v c bc trong v cht do. in dung thay i trong phm vi
rng C=n.pF 0,5F, in p nh thng c khong vi trm Volt. Hot ng
trong di cao tn (dn tn hiu cao tn xung t), c c im l tiu th t nng
lng.
C
K hiu:
T Mica (Mica Capacitors): T Mica l t khng phn cc c ch
to bng cch t xen k cc l kim loi vi cc lp Mica (hoc cng c th lng
ng mng kim loi ln cc lp Mica tng h s phm cht). in dung
C=n.pF 0,1F, in p nh thng vi nghn Volt. n nh cao, dng r
thp, sai s nh, tiu hao nng lng khng ng k, hot ng trong di cao tn
(c s dng trong my thu pht sng Radio).
K hiu:
Bn cc kim loi
C
Lp in mi
(gia cc bn cc)
Bn cc kim loi
Page 13

T mng mng (Plastic film Capacitors): L t khng phn cc,
c ch to theo phng php ging t giy, cht in mi l Polyester,
Polyethylene hoc Polystyrene c tnh mm do. in dung C=50pF-n.10F
(thng thng: 1nF-10F), in p nh thng c khong vi nghn Volt, hot
ng trong cc di tn audio (m tn) v radio (cao tn).
K hiu:
T in phn (Electrolytic Capacitors): T in phn cn c gi l

t oxi ha (hay t ha), y l loi t phn cc, gm cc l nhm c cch ly
bi dung dch in phn v c cun li thnh dng hnh tr. Khi t in p
mt chiu ln hai bn cc ca t in, xut hin mng oxide kim loi cch in
ng vai tr l lp in mi. T in phn c in dung ln, mng oxit kim loi
cng mng th gi tr in dung cng ln (0,1F n.1000F), in p nh thng
thp (vi trm Volt), hot ng trong di m tn, dung sai ln, kch thc tng
ln v gi thnh thp.
K hiu:
+ _
Page 14

T Tantal: T Tantal cng l t phn cc trong Tantal c s dng
thay cho Nhm. T Tantal cng c gi tr in dung ln (0,1F-100F) nhng
kch thc nh, dung sai nh, tin cy v hiu sut cao, in p nh thng vi
trm Volt. Thng c s dng trong cc mc ch qun s, trong cc mch
m tn v trong cc mch s.
K hiu:
b. T xoay (Air-Varialbe Capacitors )
C th thay i gi tr in dung ca t in bng cch thay i din tch
hiu dng gia 2 bn cc hoc thay i khong cch gia 2 bn cc
T xoay: gm cc l ng v l tnh c t xen k vi nhau, hnh
thnh nn bn cc ng v bn cc tnh. Khi cc l ng xoay lm thay i din
tch hiu dng gia 2 bn cc do thay i gi tr in dung ca t. Gi tr in
dung ca t xoay ph thuc vo s lng cc l kim loi v khong khng gian
gia cc l kim loi (Gi tr cc i: 50F-1000F v gi tr cc tiu: n.pF).
in p nh thng cc i c vi kV. T xoay l loi t khng phn cc v
thng c s dng trong my thu Radio chn tn
K hiu:
Cc l ng
Trc iu khin
Cc l tnh
T vi chnh (Trimmer): Khc vi t xoay l iu chnh din tch hiu

dng gia cc bn cc, t vi chnh c th thay i gi tr bng cch thay i
khong cch gia cc bn cc. T vi chnh gm cc l kim loi c t xen k
Page 15

vi nhau, gia l lp in mi, khong cch gia cc bn cc c thay i
nh c vit iu chnh.
Vit iu chnh
Bn cc trn
Lp in mi
Bn cc di
Hnh 2.T vi chnh

Thng thng t vi chnh c ni song song vi t xoay tng kh nng
iu chnh. Gi tr in dung C (n.pF-200pF), in p nh thng trung bnh,
hiu sut cao (tn hao nng lng thp). T vi chnh cng l t khng phn cc.
T ng trc chnh: T ng trc gm 2 ng hnh tr kim loi c
bc lp nha lng vo nhau. Lp nha ng vai tr l lp in mi. ng ngoi
c nh ng vai tr l bn cc tnh, ng bn trong c th trt ng vai tr l
bn cc ng, do din tch hiu dng gia 2 bn cc c th thay i lm thay
i in dung ca t. Gi tr in dung (C=n.pF-100pF), c ng dng trong
di cao tn.
ng c nh
(bn ngoi)
ng trt
(bn trong)
Lp in mi
in cc
2.2.4. Cch ghi v c tham

t in
Hnhs2.ca
T ng
trc chnh
a. Ghi trc tip: i vi cc t c kch thc ln (T ha, T tantal) c th
ghi trc tip cc thng s trn thn ca t
Gi tr in dung
in p nh thng
Page 16

b. Ghi theo quy c
3 ch s v 1 ch ci:
n v l pF
2 ch s u c ngha thc
Ch s th 3 biu din bc ca ly tha 10
Ch ci biu din sai s
V d:
0.047/200V: C=0,047F; UBR=200V
2.2/35: C=2,2F; UBR=35V
102J: C=10.102pF=1nF; =5%
.22K:C=0,22F; =10%
Bng ngha ca ch s th 3
Sai s
Ch s
H s nhn
B=0,1%
H=3%
100
C=0,25%
J=5%
101
D (E)=0,5%
K=10%
102
F=1%
M=20%
103
G=2%
N=0,05%
104
105
10-2
10-1
2.2.5. ng dng
Dung khng ca t:
Page 17

Xc
1
2fC
Nhn xt: Dung khng ca t t l nghch vi tn s f ca dng in. Tn s

cng cao th dung khng ca t cng nh v ngc li. Vy c th ni, t c tc
dng chn thnh phn mt chiu ( f 0; X c ) v dn tn hiu cao tn. Da
vo tnh cht m t in c ng dng trong cc mch:
T ghp tng: Ngn thnh phn mt chiu m ch cho thnh phn
xoay chiu qua, cch ly cc tng v thnh phn mt chiu, m bo iu kin
hot ng c lp ca tng tng trong ch mt chiu. i vi tn hiu cao tn
c th s dng t phn cc hoc t khng phn cc, tuy nhin i vi tn hiu
tn s thp phi s dng t phn cc (T ha, t Tantal c in dung ln).
T thot: Loi b tn hiu khng hu ch xung t (tp m)
T lc: c s dng trong cc mch lc (thng cao, thng thp,
thng di hoc chn di) (Kt hp vi t in hoc cun dy to ra mch lc
th ng).
T cng hng: Dng trong cc mch cng hng LC chn tn
Ngoi ra t cn c tnh cht tch v phng in nn c s dng trong cc
mch chnh lu l phng in p mt chiu.
2.3. Cun cm
2.3.1. nh ngha v k hiu
Cun dy l mt dy dn c bc lp sn cch in qun nhiu vng lin
tip trn li st. Li ca cun dy c th l: Li khng kh, li st bi hay li st
l
Li khng kh
Li st l
Li st bi
2.3.2. c tnh ca cun dy

a. To t trng bng dng in
Page 18

Khi cho dng in mt chiu qua cun dy, dng in s to nn t trng
u trong li cun dy (c xc nh theo quy tc vn nt chai).
Cng t trng: H
n
I
l
[A/m]
n: S vng dy
l: Chiu di ca li [m]
I: cng dng in [A]
Cng t cm: B o H
[T] (Tesla)
o: t thm ca chn khng o=4.10-7 (H/m)

: t thm tng i ca vt liu t so vi chn
khng
Nu cng dng in I khng i th H v B l t trng u
Nu cng dng in i thay i th H v B l t trng bin thin
b. To dng in bng t trng
Hin tng cm ng in t
nh lut Faraday: Nu t thng qua mt cun dy bin thin s sinh
ra trong cun dy mt sc in ng cm ng c ln t l vi tc bin
thin ca t thng.
nh lut Lentz: Sc in ng cm ng sinh ra dng in cm ng c
chiu chng li s bin thin ca t thng sinh ra n.
Sc in ng cm ng: ecu n.
t
Page 19

n : s vng dy
: lng t thng bin thin qua cun dy
t : khong thi gian bin thin
Hin tng t cm:

Nu dng in qua mt cun dy bin thin s sinh ra mt sc in
ng t cm trong lng cun dy chng li s bin thin ca dng in sinh ra
n v c ln t l vi tc bin thin ca dng in.
Sc in ng t cm: etc L.
i
t
(L: H s t cm [H])
Hin tng h cm:

Khi c hai cun dy c qun chung trn mt li hoc c t gn
nhau, khi dng in bin thin cun ny sinh in p h cm cun kia.
Sc in ng h cm:
ehc M
i
t
(M: H s h cm)
2.3.3. Cc tham s ca cun cm

a. H s t cm L
c trng cho kh nng cm ng
ca cun dy
Ln
n2
= o . S
l
i
b.Tr khng ca cun dy

Trong thc t lun tn ti in tr thun R bn trong cun dy
Z L RL j 2fL
Cm khng ca cun dy:

X L 2fL
Page 20

RL<<XL nn ZL X L
f=0 Z L 0
f ZL
Cun dy cho tn hiu mt chiu qua v chn thnh phn xoay chiu
(Cun chn cao tn)
c.H s phm cht ca cun dy
Do c in tr thun bn trong cun dy nn c s tn hao nng lng
di dng nhit
Q
X L 2fL
R
R
Q>> R , tn hao trn cun dy cng nh, dy cun l kim loi dn in

tt.
d. Tn s lm vic gii hn ca cun dy
Do cc vng dy c cch ly vi nhau bi lp cch in nn tn ti t
in k sinh trong cun dy, trong min tn s thp c th b qua nh hng ca
in dung k sinh nhng trong min tn s cao cun dy tng ng vi mt
mch cng hng song song.
Tn s cng hng:
fo
1
2 LC
Nu f>fo, cun dy mang tnh dung nhiu hn tnh cm, nn fo c gi l

tn s lm vic gii hn ca cun dy.
2.3.4. Phn loi v ng dng
a. Theo li cun dy
Cun dy li khng kh (air-core coils)
Cun dy c li bng nha, g hay vt liu khng t tnh. Cun dy
li khng kh c h s t cm nh (<1mH) v thng c ng dng trong min
tn s cao (trong my thu pht sng v tuyn hay trong mng anten). Do khng
Page 21

tiu hao nng lng in di dng nhit nn cun dy li khng kh c hiu
sut cao.
Cun dy li st bi
C li l bt st nguyn cht trn vi cht dnh khng t tnh. Cun
dy li st bi c h s t cm ln hn so vi cun dy li khng kh ph thuc
vo t l pha trn. Thng c s dng khu vc tn s cao v trung tn
Cun dy li st l
t thm ca li st t ln hn rt nhiu so vi t thm ca st
bi nn cun dy li st t c h s t cm ln, thng c ng dng trong
min tn s thp (m tn).
b.Theo ng dng: Cun lc, cun cng hng hay cun chn.
Ngoi ra trong thc t cun dy cn c ng dng trong lnh vc
truyn v tuyn, Relay in t hoc my pht in,
2.4. My bin p
2.4.1. nh ngha v k hiu
My bin p c s dng tng hoc gim in p ca ngun xoay chiu
m vn gi nguyn tn s.
Bin p gm hai hay nhiu cun dy trng sn cch in c qun chung trn
mt li. Li ca my bin p c th l st l, st ferit hay li khng kh.
Cun s cp
Cun s cp
Cun th cp
Cun s cp
Cun th cp
Cun th cp
Cun dy c ni vi ngun cp c gi l cun s cp, cun dy c

ni vi ti c gi l cun s cp.
K hiu:
Li st l
Li st bi
Li khng kh
Page 22
Trong thc t tit kim ngi ta c th ch cn s dng mt cun dy

c gi l bin p t ngu, tuy nhin gia cun s cp v th cp khng c
cch ly v in.
Nguyn l:
Khi cho ngun in xoay chiu qua cun s cp, dng in bin thin sinh
ra t trng bin i v c cm ng sang cun th cp sinh ra sc in ng
cm ng e2, mt khc trn cun s cp cng xut hin sc in ng cm ng e1
Cun s cp: e1 n1.
Cun th cp: e2 n2 .
Trong : n1, n2 ln lt l s vng dy ca cun s cp v cun th cp.

2.4.2. Cc t l ca bin p
T l v in p:
u1 e1 n1
u 2 e2 n 2
T l v dng in:
i1 n 2
i2 n1
T l v cng sut
Cng sut tiu th cun s cp:
P1 u1.i1
Cng sut tiu th cun th cp:
P2 u 2 .i2
Page 23

Mt bin p l tng coi nh khng c s tiu hao nng lng trn hai
cun dy s cp, th cp v mch t nn khi : P1=P2
Tuy nhin mt my bin p thc t lun c cng cun th cp nh hn
cng sut ca cun s cp do cun s cp v th cp c in tr thun tiu hao
nng lng di dng nhit ngoi ra dng in Foucault xut hin trong li t
cng tiu hao mt phn nng lng.
Hiu sut ca my bin p:
P2
.100%
P1
max (80 90)%
tng hiu sut ca my bin p cn phi gim tn hao bng cch s

dng cc l st mng trng sn cch in, dy qun c tit din ln v ghp cht.
T l v tng tr:
R1 n1

R2 n2
2.4.3. Phn loi v ng dng ca my bin p

Bin p ngun: Cp in p xoay chiu cho cc mch in v in t, c
th c kch thc t nh ti ln, c s dng trong cc trm bin p, ng thi
c tc dng cch ly cc linh kin vi ngun cao p.
Bin p cao tn: c s dng trong cc b thu pht sng Radio, li c th
l li st bi hoc li khng kh, tuy nhin nhc im ca li khng kh l phn
ln cc ng cm ng t u i ra ngoi, iu ny nh hng n c tnh ca
my bin p.
Bin p m tn: Di tn lm vic (20Hz-20kHz), thc hin phi hp tr
khng (ti thiu ha thnh phn in cm trong mch), tuy nhin kch thc v
trng lng ln nn ngy cng t c s dng.
Page 24

CHNG II. CC LINH KIN TCH CC
I. Cht bn dn (Semiconductor)
1.1.1. Cu trc vng nng lng ca cht rn tinh th
Trong mng tinh th ca cht rn, ty theo cc mc nng lng m cc
in t c th chim ch hay khng chim ch, ngi ta phn bit ba vng nng
lng khc nhau:
Vng ha tr (vng y): Tt c cc mc nng lng u b in t
chim ch, khng c mc nng lng t do.
Vng dn (vng trng): Cc mc nng lng u cn trng hoc c th b
chim ch mt phn.
Vng cm: Trong khng tn ti mc nng lng no in t c th
chim ch hay xc sut tm ht ti y bng 0.
Ty theo v tr tng i gia 3 vng trn, cc cht rn c chia lm 3
loi (xt ti 0oK).
Nng lng vng cm: Eg Ec Ev
Trong
Ec: Nng lng y vng dn

Ev: Nng lng nh vng ha tr
Vng dn
Ec
Vng dn
Vng cm
Ev
Eg
Vng ha tr
Eg 2eV : Cht cch in
Ec
Vng cm
Eg
Ev
Vng ha tr
0eV Eg 2eV : Cht bn dn
Vng dn
Vng ha tr
Eg 0eV : Cht dn in
Hnh 1. Phn loi cht rn theo cu trc vng nng lng

to dng in trong cht rn cn phi thc hin 2 qu trnh: qu trnh
to ht dn t do nh nng lng kch thch v qu trnh chuyn ng c hng
ca cc ht mang in di tc dng ca in trng.
Page 25
1.1.2. Cht bn dn thun (intrinsic)

Hai cht bn dn thun in hnh l Ge v Si c nng lng vng cm:
Eg(Ge)=0,72eV v Eg(Si)=1,12eV, thuc nhm IV trong h thng tun hon.
Trong mng tinh th, cc nguyn t Ge (Si) lin kt vi nhau theo kiu cng ha
tr (cc nguyn t a ra cc electron ha tr lin kt vi cc nguyn t xung
quanh). Cht bn dn thun thc cht khng phi l mt cht cch in tt v
cng khng phi l mt cht dn in tt. Ti nhit phng, dn in ca Si
bng khong 10-10 dn in ca mt vt dn kim loi v bng khong 1014 ln
so vi mt cht cch in tt. Tuy nhin c th tng dn in ca cht bn
dn thun bng cch t nng hoc chiu sng tinh th bn dn tng s lng
ht dn. Khi c mt ngun nng lng bn ngoi kch thch, xy ra hin tng
ion ha cc nguyn t nt mng v sinh ra tng cp ht dn t do: in t v l
trng. iu ny tng ng vi s dch chuyn ca mt in t t 1 mc nng
lng trong vng ha tr ln 1 mc nng lng trong vng dn v ng thi
li 1 mc nng lng t do trong vng ha tr c gi l l trng. Cc ht dn
t do ny di tc dng ca in trng ngoi hoc do s chnh lch v nng
c kh nng dch chuyn c hng trong mng tinh th to nn dng in trong
cht bn dn. Mt c im quan trng trong cht bn dn l in t khng
phi l ht mang in duy nht m l trng cng c coi l ht mang in nn
dng in trong cht bn dn lun gm hai thnh phn do s chuyn di c
hng ca in t v l trng.
: in t
: L trng
Hnh 2. C ch pht sinh cp ht dn t do trong cht bn dn thun
Trong cht bn dn thun, mt ca in t v l trng l bng nhau:

ni=pi
Page 26

Mt phng php hiu qu v n gin hn tng kh nng dn in ca
cht bn dn l pha tp cht.
1.1.3.Cht bn dn pha tp
a. Cht bn dn pha tp loi n
Tin hnh pha cc nguyn t thuc nhm 5 trong bng tun hon
(Antimony hoc Phosphorus) vo mng tinh th ca cht bn dn thun nh
cng ngh c bit vi nng cao (1010 n 1018 nguyn t/cm3). Nguyn t tp
cht lin kt vi cc nguyn t cht bn dn thun trong mng tinh th s tha
mt in t ha tr, lin kt yu vi ht nhn v d dng b ion ha nh 1 ngun
nng lng yu, tch khi ht nhn v tr thnh electron t do v to nn ion
dng tp cht bt ng.
Ti nhit phng, ton b cc nguyn t tp cht u b ion ha. Ngoi
ra, hin tng pht sinh ht dn ging nh c ch ca cht bn dn thun vn
xy ra nhng vi mc yu hn. Mc nng lng tp cht loi n hay loi cho
in t (donor) phn b bn trong vng cm, st y vng dn. Nu mt nguyn
t cht bn dn thun c thay th bi mt nguyn t tp cht th dn in
ca cht bn dn pha tp tng 105 ln so vi cht bn dn thun. Trong mng
tinh th tn ti nhiu ion dng tp cht bt ng v dng in trong cht bn
dn pha tp loi n gm 2 thnh phn : in t- ht dn a s (majority) c nng
l nn v l trnght dn thiu s (minority) c nng l pn ( nn pn ).
Mc nng lng tp cht loi n
Hnh 3. C ch pht sinh ht dn trong cht bn dn pha tp loi n

b. Cht bn dn pha tp loi p
Tin hnh pha tp cht thuc nhm 3 trong bng tun hon (Boron hoc
Aluminum) vo mng tinh th cht bn dn thun vi nng cao. Nguyn t
Page 27

tp cht khi lin kt vi cc nguyn t cht bn dn thun trong mng tinh th s
thiu mt in t ha tr nn 1 lin kt b khuyt v c gi l l trng d dng
nhn in t, v khi nguyn t tp cht b ion ha to nn ion m tp cht bt
ng ng thi pht sinh l trng t do . Mc nng lng tp cht loi p hay
loi nhn in t (acceptor) nm trong vng cm st nh vng ha tr.
Ngoi ra, vn xy ra c ch pht sinh ht dn ging trong cht bn dn
thun vi mc yu hn. Trong mng tinh th tn ti nhiu ion m tp cht bt
ng v dng in trong cht bn dn pha tp loi p gm 2 thnh phn: l trnght dn a s c nng pp v in t-ht dn thiu s c nng np
( p p n p ).
Mc nng lng tp cht loi p
Hnh 4. C ch pht sinh ht dn trong cht bn dn pha tp loi p
Kt lun:
trng thi cn bng, tch s nng 2 loi ht dn lun l hng s
Eg
nn pn n p p p ni pi ni 2 N c N v e kT
Trong cht bn dn pha tp loi n: nn ni pn nn: nn N D
Trong cht bn dn pha tp loi p: p p pi n p nn: p p N A
1.2. Diode bn dn
Khi cho 2 n tinh th bn dn tp cht loi p v n tip xc cng ngh vi
nhau hnh thnh nn chuyn tip p-n (junction p-n).
1.2.1. S hnh thnh min in tch khng gian:
Page 28

Do c s chnh lch v nng p p pn v nn n p nn ti min tip
xc xy ra hin tng khuch tn cc ht dn a s (l trng chuyn ng t
pn v in t chuyn ng t np), gy nn dng khuch tn gm 2 thnh
phn: dng chuyn di c hng ca in t v ca l trng c chiu quy c
pn. Nu mc pha tp ca 2 ming bn dn loi p v loi n bng nhau th 2
thnh phn dng c cng bng nhau, nhng thng thng ngi ta pha tp 2
ming bn dn vi nng khc nhau ( N A N D ).
Etx
Ikt
p
Hnh 5. Cu trc ca chuyn tip p-n
Jp_n
Khi cc ht dn a s dch chuyn li cc ion tp cht gn b mt tip

gip, do xut hin mt lp in tch khi do ion tp cht to nn, c rng
lo, ngho ht dn a s v c in tr rt ln, c gi l min ngho, hay tip
gip Jp-n hoc chuyn tip Jp-n, min ngho n su vo min bn dn c pha
tp vi nng thp hn ( N A N D lop lon ), ng thi xut hin mt in
trng trong c hng t np, c gi l in trng tip xc Etx. Hnh thnh
nn mt hng ro in th hay mt in th tip xc U tx Etx lo . in trng
Etx cn tr chuyn ng khuch tn v nhng gy nn chuyn ng tri ca cc
ht dn thiu s qua min tip xc, dng tri ngc chiu vi dng khuch tn.
Nu chuyn ng khuch tn xy ra mnh, rng min ngho tng, in trng
Etx tng, cn tr chuyn ng khuch tn v kch thch chuyn ng tri v dn
ti trng thi cn bng ng: Ikt=Itri, tc l vn tn ti 2 dng in nhng ngc
chiu nhau. Hiu in th tip xc c xc nh:
U tx
kT p p kT nn
ln
ln
q pn q n p
(2)
Page 29

Chuyn ng tri l s chuyn di c hng ca cc ht dn di tc ng
ca t trng cn chuyn ng khuch tn c gy nn bi s chnh lch v
nng . Vi nhng iu kin tiu chun v ti nhit phng, hiu in th tip
xc (Utx) c gi tr khong 0,3V vi tip gip lm t Ge v 0,6V vi tip gip
lm t Si.
1.2.2. Tip gip Jp-n khi c in trng ngoi
a. Phn cc thun
in trng ngoi Eng tp trung ch yu trong min in tch khng gian
c chiu ngc chiu vi Etx (cc dngp v cc mn). Theo nguyn l xp
chng, in trng tng Et Etx Eng hay Et Etx Eng . Vy cng in

trng tng Et Etx , rng min ngho gim, lm tng chuyn ng khuch
tn ca ht dn a s, hay cng dng in Ikt tng, cng dng in tri
Itri gim. Ngi ta gi l hin tng phun ht dn a s qua tip gip Jp-n v
trng hp ny c gi l phn cc thun cho chuyn tip p-n. (Thng in
p phn cc thun nh hn in p tip xc hay hng ro th).
Etx
p
n
_
Eng
Hnh 6. Phn cc thun cho Jp-n

b. Phn cc ngc
in trng ngoi Eng cng chiu vi Etx (cc dngn, cc mp).
Khi cng in trng tng Et Etx Eng hay Et Etx Eng Etx
rng min ngho tng, cn tr chuyn ng khuch tn, dng khuch tn Ikt gim
ti 0, dng tri Itr tng cht t v nhanh chng t c gi tr bo ha c gi
l dng ngc bo ha. Trng hp ny c gi l phn cc ngc cho chuyn
tip p-n.
Etx
p
Page 30
1.2.3. Cu to, k hiu v nguyn l lm vic ca diode bn dn

a.Cu to v k hiu
Diode bn dn c cu to l mt chuyn tip p-n vi mt in cc ni ti
min p gi l Anode(A) v mt in cc c ni ti min n c gi l
Cathode (K), lin kt c gi l lin kt Ohmic v c th coi l mt in tr
c gi tr nh ni tip vi diode mch ngoi.
Etx
p
n
K
Jp-n
Hnh 8. Cu to v k hiu ca Diode

b.Nguyn l hot ng v c tuyn Volt_Ampere
Di tc ng ca in trng ngoi diode hot ng nh van mt chiu:
Khi phn cc thun (UAK>0)
Ban u, khi in p UAK vn cn nh dng ID tng theo hm s m

ca in p:
U AK
m.U
T
I D I S e
1
(3)
Trong :
Is(T) l dng ngc bo ha, ph thuc vo nng ca ht dn thiu
s ti trng thi cn bng, ph thuc vo bn cht cu to ca cht bn dn pha
tp v do ph thuc vo nhit .
Page 31

UT: Th nhit (Thermal Voltage); UT=
kT
-23
26mV ; k=1,38.10 J/K:
q
hng s Boltzman; q=1,6.10-19 (C) in tch ca ht mang in; K: nhit c

o bng n v Kenvil.
m: h s hiu chnh gia l thuyt v thc t.
ID(mA)
ID(mA)
UAK
UAK(V)
UAK(V)
a)
b)
Hnh 9. (a) c tuyn Volt-Ampere ca Diode, (b) Min gn gc

Nu UAK>0,1V c th biu din hm quan h gia ID v UAK:
U AK
I D I S . e m.U T
(4)
Tuy nhin vi gi tr UAK ln th quan h gia dng ID v in p UAK

khng theo phng trnh trn. Khi UAK t gi tr bng in p ngng Uth diode
dn mnh, dng ID tng mnh, tip gip p-n c coi l in tr thun c gi tr
rt nh.
Khi phn cc ngc (UAK<0)
Khi in p phn cc ngc U AK cn nh, dng ID quan h vi

in p UAK theo phng trnh (3)
Khi U AK 0,1V c th biu din: ID=-Is (do e
U AK
m.U T
1 ).
Page 32

Vy trong trng hp phn cc thun dng ID c gi tr ln do s phun
ht dn a s qua tip gip p-n, ngc li trong trng hp phn cc ngc

dng qua diode ch l dng ngc bo ha Is c gi tr rt nh. iu ny
th hin tnh cht van mt chiu ca diode.
IS (mA)
UAK(V)
Hnh 10. Phn cc ngc cho diode

Vng nh thng (UAK<0 v
U AK
ln): Khi in p phn cc
ngc ln t c gi tr in p nh thng (UBR), dng ID tng t ngt

nhng in p UAK khng tng. Khi tip gip p-n b nh thng v diode mt
tnh cht van. C hai hin tng nh thng chnh: nh thng v nhit v nh
thng v in.
nh thng v nhit: Do cc ht dn thiu s c gia tc trong in
trng mnh nn va chm vi cc nguyn t nt mng lm cho nhit ti min
tip xc tng, lm pht sinh cp ht dn in t - l trng. S ht dn mi c
pht sinh tip tc va chm vi cc nguyn t nt mng, cng lm nhit tng
v s lng ht dn tng mt cch t ngt, cng dng ngc tng t bin
v lm ph hng tip gip p-n.
nh thng v in: theo hai c ch l c ch thc l v c ch xuyn hm
(Tunnel hay Zener).
Page 33

C ch nh thng thc l: Do cc ht thiu s c gia tc trong
in trng mnh va chm vi cc nguyn t nt mng, cung cp nng lng
cho cc electron ha tr c th bt ra khi ht nhn tr thnh electron t do, hin
tng ion ha nguyn t ny c gi l hin tng ion ha do va chm, lm
pht sinh cc cp in t - l trng t do. V cc ht dn mi c pht sinh tip
tc c gia tc trong in trng mnh v ion ha cc nguyn t khc khi s
ht dn trong min in tch khng gian tng ln t ngt nh thc l lm cho
in tr sut gim v cng dng ngc tng t bin, chuyn tip p-n b
nh thng. Trong hu ht cc chuyn tip p-n, nh thng theo c ch thc l
lun chim u th.
C ch nh thng xuyn hm: Cng in trng mnh cng
cung cp nng lng cho cc electron ha tr ca nguyn t cht bn dn thun
c th bt ra khi ht nhn tr thnh electron t do. Hin tng ion ha ny
c gi l ion ha do in trng. Nu cng in trng ngc ln lm
s lng cc ht dn tng ln mt cch ng k hay cng dng in ngc
tng t ngt v tip gip p-n b nh thng. C th hnh dung trong c ch nh
thng xuyn hm cc electron t do t vng ha tr ca min p dch chuyn
xuyn qua rng ng hm sang vng dn ca min n.
1.2.4. ng dng
a. Chnh lu: Bin i in p xoay chiu thnh in p mt chiu (nn
in)
Chnh lu na chu k (half-wave Rectifier) :
D
-12/12V
vs
R =1k
1kHz
Diode c coi l l tng: UAK 0 : diode thng hon ton

Page 34

UAK <0: diode ngt
Trong na chu k dng, UAK 0 , diode cho tn hiu qua, vo=vi
Trong na chu k m, UAK<0, diode ngt, h mch, vo=0.
Page 35
Chnh lu 2 na chu k(Full-wave Rectifier) :

Trong na chu k dng: diode D1 thng, D2 ngt, dng qua D1 v ti
RL
Trong na chu k m: diode D1 ngt v D2 thng, dng qua D2 v ti RL
Vy trn ti RL xut hin in p trong c 2 na chu k
D1
v1
vi
D2
RL
Chnh lu cu(Bridge Rectifier) :

Hnh 11. Chnh lu hai na chu k
V1
-12/12V
vs
DB
50 Hz
R = 1k
Hnh 12.Chnh lu cu
Page 36
Chnh lu vi t lc C: Tn hiu sau chnh lu c h s gn ln, t C ng

vai tr l phng in p do hin tng phng np hay cn gi l lc gim h
s gn.
b. Hn bin (clipper)
Tn hiu xoay chiu u ra b gii hn ti mt gi tr in p xc nh.
Mch hn bin trn hoc mch hn bin di c mc theo kiu ni tip hay
kiu song song
Mch hn bin mc ni tip: Hn ch trn mc E (a)
Hn ch di mc E (b)
D
-12/12V
R =10k
vs
1kHz
E =5V
vs
-12/12V
R =10k
1kHz
E =5V
Mch hn bin mc song song: Hn ch trn mc E (a)

Hn ch di mc E (b)
R
-10/10V
vs
22k
+
2kHz
-12/12V
D
E
5V
vs
47k
D
+
2kHz
E
5V
Page 37
Page 38

c. Mch ghim (clamper)
Tn hiu ac u ra c dch (shift) mt gi tr in p dc so vi tn hiu
in p u vo khi phc thnh phn dc ca tn hiu u vo.
Ti thi im ban u, t cha tch in. Trong na chu k dng u tin
ca tn hiu u vo, khi in p u vo ln hn in p ngng ca diode,
diode thng hon ton, t c tch in n gi tr cc i: U cmax=vi-E (trong
Vi l bin in p u vo). Do t khng th phng in qua diode nn, vo=viUcmax, hay c th ni in p u ra c dch so vi in p u vo mt gi tr
in p dc (Ucmax).
C
-10/10V
vs
1kHz
D
+
E = 2V
Hnh 14. Mch ghim in p

Page 39
1.2.5. Mt s diode c bit

a. Diode Zener (diode n p)
Diode Zener l mt diode c bit c pha tp cht vi nng rt cao

v c th hot ng trong min nh thng ca c tuyn Volt-Ampere. Trong
min phn cc thun, diode Zener hot ng nh mt diode chnh lu thng.
Trong min phn cc ngc, khi in p phn cc ngc t c gi tr in p
Uz=-UBR, dng qua diode (Iz) tng mnh, nhng in p Uz=const, nn diode
Zener c s dng n nh in p mt chiu.
b. Varactor diode (diode bin dung)
Tip gip p-n khi c phn cc ngc c th c coi tng ng nh

mt t in (do min in tch khng gian ngho ht dn a s nn c in tr
sut ln), rng ca min in tch khng gian ph thuc vo in p phn cc
ngc nn gi tr in dung ca min in tch khng gian thay i theo gi tr
in p phn cc ngc. Diode bin dung c ng dng trong cc mch cng
hng chn tn: Mch iu chnh tn s t ng - AFC (Automatic frequency
Controller) hay VCO (Voltage-Controlled Oscillator).
Page 40

c. Photo diode (Diode thu quang)
L mt linh kin bin i quang nng thnh in nng. C cu to ging

diode chnh lu nhng v bc cch in bn ngoi c mt phn l knh hoc
thy tinh trong sut nhn nh sng chiu vo tip gip p-n. Diode thu quang
cng hot ng trong min phn cc ngc. Khi nh sng chiu vo tip gip pn cung cp nng lng cho cc electron ha tr c th bt ra khi ht nhn
nguyn t, lm pht sinh cp ht dn in t-l trng t do. Cng dng
ngc tng tuyn tnh vi cng nh sng chiu vo tip gip. Diode thu
quang c s dng rng ri trong cc h thng iu khin t ng theo cng
nh sng.
d. LED (Light Emitting Diode- diode pht quang)
L linh kin bin i in nng thnh quang nng, c pha tp vi nng

cao tinh th bn dn tp cht loi p hoc loi n ti mc suy bin, rng
vng cm hp li. Khi mt in p thun c t vo chuyn tip p-n, cc ht
dn a s chuyn ng khuch tn qua tip gip p-n v tr thnh ht thiu s
tri, sau chng khuch tn su vo n tinh th bn dn trung ha v in v
ti hp vi ht dn a s v khi pht ra nh sng. Hin tng l khi cc
electron chuyn t mc nng lng cao xung mc nng lng thp km theo
pht x cc photon, c gi l hin tng ti hp ht dn. LED c th pht ra
nh sng trng thy ph thuc vo in p ngng. in p ngng ri trn
LED thng cao hn diode chnh lu.
Page 41

1.3. Transisor
Transistor l mt linh kin in t gm 3 in cc c kh nng khuch i dng,
in p hay cng sut. Nguyn l c bn ca Transistor l in p gia 2 cc
ca n iu khin cng dng in ca cc th 3. C 2 loi Transistor:
Transistor lng cc ( Bipolar Juction Transistor BJT) v Transistor trng
(Field-Effect Transistor FET). Mi Transistor c mt u im v c tuyn ring
v do cng c ng dng trong nhng phm vi ring.
Transistor
BJT
npn
FET
MOSFET
pnp
Knh cm ng
Knh n
Knh p
JFET
Knh t sn
Knh n
Knh n
Knh p
Knh p
Hnh 15. S phn loi Transistor

3.3. Transisor lng cc (Bipolar Junction Transistor - BJT)
BJT gm 3 lp bn dn tp cht tip xc cng ngh xen k nhau, hnh
thnh nn 2 tip gip Jp-n (phi tuyn) kt hp vi 3 tip xc Ohmic (tuyn tnh)
v a ra 3 in cc: Emitter (Cc pht), Base (Cc gc) v Collector (Cc
gp). C 2 kt cu c trng: npn v pnp nhng Transistor loi npn c s
dng rng ri hn.
1.3.1. Cu to, k hiu v nguyn l hot ng ca Transistor
a. Cu to, k hiu
Page 42

Ba min ca Transistor c pha tp vi nng khc nhau v c rng
cng khc nhau:
+ Min Emitter pha tp vi nng cao nht v rng trung bnh
+ Min Base pha tp vi nng nh nht v mng nht
+ Min Collector pha tp vi nng trung bnh nhng rng ln nht
Tip gip Emitter - Base c gi l: JB-E (JE)
Tip gip Collector - Base c gi l: JB-C (JC)
Hnh 16. Cu to v k hiu ca BJT

C th coi Transistor tng ng vi 2 diode mc i nhau nhng khng
c ngha c mc 2 diode i nhau c th hot ng ging nh Transistor v khi
khng c s tng h ln nhau gia 2 tip gip JB-E v JB-C.
Transistor c 2 tip gip p-n nn c th c 4 kh nng phn cc cho 2 tip

gip
JE
JC
Min lm vic
ng dng
Phn cc ngc
Phn cc ngc
Min ct
Kha
Phn cc thun
Phn cc ngc
Min tch cc
Khuch
Page 43

i
Phn cc thun
Phn cc thun
Phn cc ngc
Phn cc thun
Min bo ha
Tch
ngc
Kha
cc
Transistor hot ng trong ch khuch i (hay trong min tch

cc), JE c phn cc thun v JC phn cc ngc.
Nu JE v JC u c phn cc thun hoc u c phn cc ngc th
Transistor hot ng nh mt kha in t vi hai trng thi: Trng thi ngt v
trng thi thng bo ha, c ng dng trong cc mch xung v mch s.
b. Nguyn l hot ng ( npn)
Khi JE c phn cc thun (UBE>0), dng in qua JE ch yu l dng
khuch tn ca cc ht dn a s, in t t min Emitter c phun vo min
Base ng thi l trng t min Base khuch tn sang min Emitter, tuy nhin
do nng pha tp ca min Base rt thp nn cng dng l trng nh hn
rt nhiu so vi cng dng in t, nn c th coi dng I E l dng ca cc
in t, ph thuc ch yu vo in p UBE.
Khi cc in t c phun t min Emitter sang min Base, tip tc
khuch tn su vo trong min Base v xy ra hin tng ti hp ht dn, dng
IB gm 2 thnh phn: dng l trng (ht dn a s) khuch tn sang min Emitter
(IB1) v dng l trng ti hp vi electron (IB2).
Do rng ca min Base rt mng nn ch c mt s rt t cc in t ti
hp vi l trng trong min Base cn a s in t ti c chuyn tip JC, JC
phn cc ngc nn electron c cun sang min Collector. Dng in I C trong
min Collector gm 2 thnh phn: ICBo: dng ngc bo ha (dng tri ca ht
dn thiu s) v dng cun ca cc ht thiu s tri t min Base sang min
Collector. Dng ngc bo ha ICBo c gi tr rt nh nn dng cun ca cc ht
dn thiu s tri l thnh phn ch yu ca dng IC, hay I C I E nn ch ph
thuc vo in p UBE m c lp vi in p UCB, tc l dng IC c iu
khin bi in p UBE, l nguyn l hot ng c bn ca Transistor.
Page 44
I C I E I CB0
(5)
I E IC I B
(6)
Vy: I C I B I C I CB0 hay IC

t
1
IB
I CBo
1
1
ta c:
1
I C .I B 1 .I CBo .I B I CEo
(7)
Trong : l h s truyn t dng in 1 , cng gn 1 Transistor

cng tt.
: l h s khuch i dng tnh (50-300)
Vy: = /(1+ )
1.3.2. Cc cch mc ca BJT
Nu coi Transistor nh mng 4 cc, khi phi c mt cc chung cho c
u vo v u ra. C th c 3 cch mc (kt cu): CE (Common Emitter);
CB(Common Base) v CC (Common Collector).
IC
IB
IC
IB
IC
IE
a)
IE
IB
IE
b)
Hnh 17. Cc kt cu ca BJT a. CE
c
b. CB
c.CC
a. Kt cu CE:
c tuyn vo: I B f U BE U CE const
Do JE phn cc thun m I B I E nn c tuyn vo trong trng hp
ny ging c tuyn ca chuyn tip p-n phn cc thun. Nu UCE tng, m
Page 45

UBE=const khi UCB tng, hay in p phn cc ngc tng, s ht n c
tip gip Jc cng nhiu hay s ht b ti kt hp trong min Base cng t, nn
dng IB gim.
IB(A)
150
100
UCE=0.5
V
IC(mA)
15
UCE=0V
UCE=1V
IB=150A
125A
100A
10
5
50
IB=0
0
IC(mA)
UBE(V)
UCE(V)
UCE(V)
Hnh 18. c tuyn vo v c tuyn ra ca kt cu CE
c tuyn ra: I C f U CE I B const
Min khuch i (gn gc), dc ca c tuyn kh ln. Khi UCE tng,
in p UCB cng tng, phn cc ngc ca chuyn tip Jc tng nn IC tng
tuyn tnh theo in p UCE. Khi UCE t gi tr ln ( 2V ) dng Ic t gi tr
bo ha, I C .I B tc l khng ph thuc vo UCE nhng UCE qu ln th IC
tng t ngt do xy ra hin tng nh thng do hiu ng thc l hay hiu ng
xuyn hm. Nu UCE<UBE(on) th dng IC gim nhanh v gi tr 0.
Page 46

b. Kt cu CB:
c tuyn vo: I E f U BE U CB const
Do JE phn cc thun nn c tuyn vo c dng ging vi c tuyn ca
diode khi phn cc thun. Khi UBE=const, UCB tng, phn cc ngc tng, vng
ngho Jc rng ra, khong cch hiu dng gia 2 min J E v Jc gim nn dng IE
tng.
c tuyn ra: I C f U CB I E const
Do I E const , I C I E nn khi thay i UCB th dng I C thay i
khng ng k. Mt im khc bit l khi UCB gim ti 0 nhng dng Ic cha
gim ti 0. l do khi UCB=0, bn thn chuyn tip Jc vn cn in th tip
xc, chnh in th tip xc ny cun cc ht dn t Base sang min Collector
nn dng I C vn c gi tr khc 0. dng I C 0 , chuyn tip Jc phi c
phn cc thun, khi Transistor chuyn sang hot ng trong ch bo ha.
iu ng ch l khi IE=0 nhng vn c thnh phn dng r ICE0 nn I C 0 .
c. Kt cu CC:
c tuyn vo: I B f U CB U CE const
Do khi Transistor hot ng trong ch khuch i, in p UBE lun
gi khng i (UBE=0,7V i vi Si v 0,3V i vi Ge). Nn UCB=UCEUBE=const, UCB khng ph thuc vo IB.
c tuyn ra: I E f U CE I B const
Do I C I E nn c tuyn ra trong
trng hp ny c dng ging vi c tuyn ra trong trng hp CE.

IB(A)
IE(mA)
UCE1
UCE2>UCE1
UCB(V)
Hnh 19. c tuyn vo v c tuyn ra ca kt cu CC
IB=150A
125A
100A
IB=0
Page 47
UCE(V)
1.3.3. Phn cc BJT:

Phn cc l cp in p mt chiu cho cc in cc ca Transistor.
BJT hot ng trong ch khuch i J E lun phn cc thun v Jc lun phn
cc ngc.
ng ti tnh: I O f (U O ) l mi quan h gia cng dng in v
in p u ra khi Transistor c mc trong mt mch c th (khi c ti).
im cng tc tnh l im nm trn ng ti tnh xc nh cng
dng in v in p u ra khi khng c tn hiu xoay chiu t vo. im cng
tc tnh chnh l giao im ca ng ti tnh v c tuyn ra ng vi gi tr
IB=const. ng ti tnh c v trn cng h trc ta vi c tuyn ra.
IC(mA)
ICmax
ng ti tnh
IB0
IB1
Q
IBQ
UCE(V)
VCC
Hnh 20. ng ti tnh v im lm vic tnh
n nh im cng tc tnh khi nhit thay i
Transistor l mt linh kin rt nhy cm vi nhit . Hai thng s ca
Transistor nhy cm vi nhit nht l in p U BE v cng dng
ngc bo ha ICBo. Nu dng ICBo tng, lm cho dng IC tng, s lng ht dn
qua chuyn tip Jc tng lm cho s va chm gia cc ht dn vi mng tinh th
tng, khi lm cho nhit tng v tip tc lm I CBo tng, c th nhit ca
Page 48

Transistor tng mi. Hin tng ny c gi l hiu ng qu nhit. Hiu ng
qu nhit lm thay i im cng tc tnh v nu khng c bin php hn ch s
lm hng Transistor. Khi nhit thay i in p U BE cng thay i v do
cng lm im cng tc tnh thay i. Tuy nhin, trong iu kin bnh thng
nh hng ca dng ngc bo ha ICBo n IC nhiu hn nh hng ca in p
UBE nn khi ni n nh hng ca nhit n im cng tc tnh thng ni
n nh hng ca dng bo ha ICBo, v a ra khi nim h s n nh nhit:
S
I C
I CBo
I C .I B 1 I CBo
Nn:
I C
I CBo
1
I
1 B
I C
(8)
H s S cng nh, tnh n nh i vi nhit cng cao.

Cc phng php phn cc cho Transistor n nh im cng tc tnh
1.4. Cc ph-ng php phn cc cho BJT
1.4.1 Phn cc cho BJT
Phn cc cho BJT l xc nh im lm vic ban u (im lm vic tnh
Q - Quiescent) bng cc ngun mt chiu.
Trn c tuyn vo, im Q c to : uBE= UBEQ; iB = IBQ
Trn c tuyn ra, im Q c to : uCE= UCEQ; iC = ICQ
Nh- vy phn cc cho BJT phi to ra hai ngun mt chiu: UBB, RB
ca vo v UCC, RC ca ra (hnh 3-5).
*Ca vo
Ph-ng trnh Kirchhoff cho vng mch ca vo:
(3.12)
UBB iB RB uBE
-ng ti ca vo:
iB
UBB uBE
RB
(3.13)
Page 49

b
iC
+
B
uCE
+u
BE
- E
iE
b'
RC
RB
a
iB
UBB
UCC
Hnh 3-5 Phn cc cho BJT

im lm vic ca vo l to giao im Q gia -ng ti (3.13) vi c
tuyn V-A ca vo ca BJT (3.9). To Q ca vo trn hnh 3-6a s l:
uBE (Q) U BEQ U f 0,6V
(3.14)
iB (Q) I BQ
U BB 0,6V
RB
(3.15)
*Ca ra
Ph-ng trnh Kirchhoff cho vng mch ca ra:
UCC iC RC uCE
(3.16)
-ng ti ca ra:
iC
UCC uCE
RC
(3.17)
u / U
T 1)
i I (e BE
B
B0
iB
iC
U CC
RC
U BB
RB
IBQ
iC
iB
UBEQ Uf UBB
a) c tuyn vo
UBB uBE
RB
UCC uCE
RC
Q
ICQ
IQB
UCEQ
uBE
UCC UCE0
uCE
b) c tuyn ra
Hnh 3-6 im lm vic Q

To Q ca ra trn hnh 3-6b s l:
Dng in ICQ t-ng ng IBQ ca vo khi b qua dng in ng-c ICB0:
iC (Q) I CQ F I BQ
(3.18)
in p UCEQ theo (3.16) s l:
uCE (Q) U CEQ U CC I CQ RC
(3.19)
1.4.2 Cc ph-ng php phn cc c bn cho BJT
I. Phn cc bng dng in baz
Page 50

+ UCC -
+ UCC R2
R1
R3
R1
b
C
a
iB
B
+
uBE
-
iC
+
uCE
E
a
iB
B
+
uBE
-
C
iC
+
uCE
E
R2
b'
(a)
b'
(b)
Hnh 3-7 Cc ph-ng php phn cc c bn cho BJT

Phn cc bng dng in baz -c thc hin theo s hnh 3-7a vi
mt ngun mt chiu UCC duy nht. Ngun UBB, RB -c to ra t ngun UCC, R1.
Ngun UCC, RC -c to ra t ngun UCC, R2.
Mch phn cc hnh 3-7a c th -c thay th t-ng -ng bng s
hnh 3-5 vi cc tham s t-ng -ng:
UBB= UCC
(3.20)
RB= R1; RC= R2
(3.21)
Cc gi tr phn cc -c xc nh theo s hnh 3-5 theo cc cng thc:
(3.14), (3.15), (3.18), (3.19).
C th xc nh cc gi tr phn cc trc tip t s hnh 3-7a, -c cc
kt qu nh- trn, ch thay th cc gi tr t-ng ng theo cc cng thc (3.20) v
(3.21).
II. Phn cc bng phn p
Mch phn cc bng mch phn p -c thc hin theo s hnh 3-17b
t mt ngun mt chiu UCC v cc in tr R1, R2, R3. S ny c th quy i
t-ng -ng v s hnh 3-5.
Mch phn p ca vo: UCC v cc in tr R1, R2, c th -c thay th
bng ngun p UBB, RB. Cc gi tr t-ng -ng nhsau:
R2
U BB
U CC
(3.22)
R1 R2
RB
R1 R2
R1 R2
(3.23)
Mch ca ra: UCC, R3 t-ng -ng vi ngun p: UCC, RC:

UCC= UCC
(3.24)
R C= R 3
(3.25)
Page 51

Cc gi tr phn cc -c xc nh t s hnh 3-5 theo cc cng thc:
(3.14), (3.15), (3.18), (3.19).
3.4.3 n nh ch lm vic cho BJT
Trong qu trnh lm vic, im lm vic ca BJT c th b tri khi v tr
chn ngay c khi ch-a c tc ng ca cc tn hiu c ch do mt s hiu ng
mt n nh tc ng nh-: nhit thay i, ngun phn cc mt chiu thay i
v khi tham s ca cc phn t trong mch thay i. BJT lm vic bnh
th-ng, khng nh h-ng n ch tiu cht l-ng ca mch, trong cc s
mch in t s dng BJT th-ng thc hin cc bin php n nh:
- -a thm vo mch cc phn t hoc cc on mch n nh nhit ,
n nh ngun mt chiu.
- Thay th cc phn t mch c tham s n nh hn.
- To ra bin i ng-c b tr cho nhng bin i gy mt n nh hoc
ph-ng php cung cp ng-c - ph-ng php hi tip m, ph-ng php
ny s -c nghin cu trong ch-ng khuch i.
i vi BJT, in p phn cc thun tip gip mit (u BE) v dng in
ng-c tip gip Clct (ICB0) u ph thuc vo nhit . Dng in ICB0 ph
thuc ch yu vo nhit .
+ UCC -
+ UCC R3
R1
B
+
uBE
-
RT
t0
R2
(a)
R3
R1
C
+
uCE
E
ID0
B
+
uBE
-
R2
C
+
uCE
E
ICB0
(b)
Hnh 3-8 n nh bng in tr nhit (a) v it phn cc ng-c (b)

Theo cch th nht, c th mc song song vi tip gip mit in tr
nhit c h s nhit m (hnh 3-8a). Khi nhit tng, dng Clct tng ng
thi in tr nhit gim lm gim uBE, dng Baz gim ko theo dng Clct
cng gim theo b tr mc tng dng ny do nhit .
Hnh 3-8b l s b tr mt n nh nhit gy bi I CB0 bng dng in
ng-c ca it ID0 (dng ng-c bo ho Is). Tt c cc bin i ca ICB0 theo nhit
u -c b tr bng cc bin i ca ID0 m t nh h-ng n cc dng in
khc ca BJT.
Page 52

Ph-ng php hi tip m -c s dng nhiu n nh ch lm vic
cho BJT. Hnh 3-9 l cc ph-ng n thng dng trong cc mch in t.
+ UCC -
+ UCC R2
R1
iB
B
+
uBE
-
iB+iC
+
uCE
E
iE
b
C
R3
R1
a
iB
B
+
uBE
-
R2
b'
(a)
C
iC
+
uCE
E
iE
R4
b'
(b)
Hnh 3-9 n nh ch lm vic ca BJT bng hi tip m.

S hnh 3-9a l n nh bng in p song song. Nguyn l nhsau:
khi nhit tng, dng iC tng, in p trn R2 tng, ubb gim, in p thnh
phn phn p uaa = uBE gim theo dn n iB gim lm cho iC gim, ko iC v gi
tr n nh.
Cc gi tr phn cc c th xc nh trc tip t s :
UCC=UR2+UR1+uBE
=(iC+iB)R2+iBR1+uBE
= iB(F+1)R2+ iBR1+uBE
iB
U CC u BE
R1 (1 F ) R2
To im Q u vo c in p BE nh- 3.14: U BEQ 0,6V ,v:

I BQ
U CC 0,6V
R1 (1 F ) R2
(3.26)
To im Q u ra c dng clct nh- 3.18: ICQ F I BQ , v:

U CEQ U CC ( I BQ I CQ ) R2
(3.27)
Ph-ng php phn cc c hi tip trn clct nn cn -c gi l phn
cc hi tip (phn hi) clct.
S hnh 3-9b l n nh bng hi tip dng in ni tip. Nguyn l nhsau: khi nhit tng, dng iC tng, dng iE = (iC+ iB) tng lm UR4 tng, in p
uBE= (UR2- UR4) gim, dn n iB gim lm cho iC gim, ko iC v gi tr n nh.
Cc gi tr phn cc c th xc nh bng cch quy v s t-ng -ng
hnh 3-10. Cc gi tr t-ng -ng theo cc cng thc t 3.22 n
2.25 v
RE=R4.
Page 53

RC
b
iC
C
RB
+
uCE
+ uBE
- E
iB
UBB
UCC
iE
RE
b'
Hnh 3-10 S t-ng -ng mch hnh 3-9b

U BB iB RB uBE iE R ; iE (1 F )iB
U BB uBE
iB
RB (1 F ) RE
To im Q u vo c in p BE nh- 3.14: U BEQ 0,6V ,v:

I BQ
U BB 0,6V
RB (1 F ) RE
(3.28)
To im Q u ra c dng clct nh- 3.18: ICQ F I BQ , v:

UCEQ UCC ( I BQ ICQ ) RE ICQ RC
(3.29)
Ph-ng php phn cc c hi tip trn mit nn cn -c gi l phn cc
hi tip (phn hi) mit.
1.4.4 Cc ch lm vic ca BJT
I. c tnh ti
Xt cc c tuyn tnh trong iu kin gi mt tham s no c nh:
c tuyn vo khi mc E chung l quan h gia dng iB v uBE ng vi cc hng
s uCE, c tuyn ra l quan h gia dng iC v uCE ng vi cc hng s iB. Khi
BJT lm vic vi ch c ti, quan h dng v p theo quy lut -ng ti, cc
dng in v in p trn cc cc u thay i nn gi l ch ng.
Phn tch c tnh ti ca ra ca BJT trong mch in hnh 3-11a.
* Ti mt chiu
Khi lm vic vi ngun mt chiu, t in coi nh- h mch, BJT ch c
mt ti duy nht l RC, -ng ti theo biu thc 3.17 tnh ring cho thnh phn
mt chiu vi iC= IC v uCE= UCE s l:
IC
U CC U CE
RC
(3.30)
Trong IC l dng mt chiu qua RC v UCE l in p mt chiu trn CE.

dc ca -ng ti mt chiu ph thuc vo RC:
Page 54

acrtg (
1
)
RC
(3.31)
iC
+ UCC RC
R1
iC
iB
+
uCE
-
+
uBE
ICmax
IC
U CC
RC
ICbh
Ti xoay
chiu
IBmax
III
N
Rt
PCmax
ICQ
iE
R2
Parabn bo ho
II
Ti mt
chiu
(b)
(a)
UCbh
UCEQ
M iB=0
I
UCC UCE0
uCE
Hnh 3-11 Mch BJT c ti (a) v c tnh ti ca BJT (b)

-ng ti mt chiu c dc (-1/RC) ph thuc ti mt chiu: RC
* Ti xoay chiu
Khi lm vic vi tn hiu xoay chiu, t in C coi nh- ngn mch. Theo
nguyn l xp chng, UCC i vi tn hiu xoay chiu cng coi nh- ngn mch.
Ti xoay chiu bao gm RC mc song song vi Rt:
Rtxc
RC Rt
RC Rt
(3.32)
-ng ti xoay chiu c dc (-1/Rtxc) ph thuc gi tr ti xoay chiu

Rtxc:
' acrtg (
1
)
Rtxc
(3.33)
II. Cc ch lm vic ca BJT

Khi lm vic trong mch c ti, im lm vic ca BJT tr-t trn -ng ti.
im lm vic c th ri vo cc ch sau y
Ch ct dng iB = 0, im lm vic trong vng I nm trn v pha d-i
-ng c tuyn tnh iB = 0. ch ny cc tip gip ca BJT hoc u khng
-c phn cc hoc phn cc ng-c.
Dng in iB= 0
*
Dng in iC c gi tr I CB
0 0 (hoc bng 0 khi khng phn cc)
in p uCE UCC
Trn -ng ti mt chiu, im bin gii ct dng l M.
Ch ny c dng in gn bng 0 v in p gn bng ngun t-ng
-ng vi trng thi ngt ca mt cng tc in.
Page 55

Ch tch cc, im lm vic trong vng II. Vng ny -c gii hn bi
c tuyn tnh iB = 0, -ng parabn bo ho, UCE0, PCmax, ICmax.
ch tch cc, BJT c kh nng khuch i tuyn tnh nn cn -c gi
l ch khuch i tuyn tnh. Vng ny c dng in t ph thuc vo u CE, c
tuyn gn nh- song song vi trc honh cn gi l vng dng khng i. Lm
vic ch tch cc, BJT c tip gip EB (J E) phn cc thun, tip gip BC (JC)
phn cc ng-c.
Trn -ng ti mt chiu, ch tch cc l on MN.
Ch tch cc th-ng -c s dng trong cc mch t-ng t.
Ch bo ho, vng III nm trn v pha trn -ng parabn bo ho.
ch ny cc tip gip ca BJT u -c phn cc thun.
Dng in baz: iB = IBmax
Dng in iC =F.IBmax= hng s
in p uCE= UCbh 0
Trn -ng ti mt chiu, im bin gii bo ho l N.
ch bo ho, dng iC lun l hng s v t gi tr cc i khi tng i B>
IBmax, khng iu khin -c dng in. Ch ny c dng in l cc i v
in p gn bng 0 t-ng -ng vi trng thi ng ca mt cng tc in.
BJT lm vic hai ch ct dng v bo ho t-ng -ng vi hai trng
thi ngt v ng ca mt cng tc in gi l ch kho. Ch kho ca BJT
l ch chuyn t ct dng sang bo ho v ng-c li. Ch ny -c s
dng trong cc mch xung, s.
Page 56
CHNG 4: TRANSISTOR HIU NG TRNG (FET)

Ch-ng ny s nu cu to, phn tch cc hin t-ng vt l v cc quan h
dng in, in p xy ra trong FET (Field Effect Transistor). Cu trc FET c
knh bn dn loi P hoc loi N. Dng in chy qua knh dn -c iu khin
bng in tr-ng thng qua thay i dn in ca knh. Vic phn tch s tp
trung vo FET knh dn loi N, cn knh dn loi P c th phn tch t-ng t ch
i ln v tr P cho N v i ln vai tr l trng cho in t.
4-1. Tranzito hiu ng tr-ng MOSFET knh dn N
4.1.1 MOSFET giu (Enhancement) knh dn N
I. Cu to:
G
S
Si02
N+
Vng knh
L
N+
Phin P
(a)
K hiu:
D
G
B
S
(b)
Hnh 4-1 Cu to (a) v k hiu (b) MOSFET giu knh dn N
MOSFET l tranzito hiu ng tr-ng FET (Field Effect Transistor) c cc
ca cch in IG (Insulated Gate) theo cng ngh MOS (Metal Oxide
Semiconductor), cn c tn gi khc l IGFET.
Tranzito -c cu to t mt phin pha tp nh cht bn dn loi P.
Bng cng ngh quang khc v khuch tn -a vo hai khi bn dn loi N pha
tp cao, gn vi cc in cc ngun (S-Source) v cc mng (D-Drain), cch
nhau mt on trong phin gi l knh dn. Vng knh -c ph mt lp in
mi xt (SiO2). Lp kim loi (M-Metal) hoc bn dn a tinh th ph trn lp
Page 57

in mi gn vi cc ca (G-Gate). Lp in mi (O-Oxide) m bo cch in
mt chiu t phin bn dn (S-Semiconductor) n cc ca. Thc t dng qua
lp in mi ch khong 10-15A hoc nh hn.
Cc kch th-c vt l quan trng ca MOSFET l rng cc ca W,
di cc ca L, dy lp xt tox.
in cc gn vi phin l cc thn (B-Body), trong cc tranzito ri rc,
cc ny th-ng -c ni vi cc ngun, MOSFET cn li ba cc: S, G, D.
Thng th-ng cu trc MOSFET l i xng nn c th i ln S v D m khng
lm thay i tnh cht ca FET.
II. MOSFET khi khng c in p cc ca uGS
Khi uDS > 0, tip gip PN gia D v phin phn cc ng-c, khng cho dng
in chy qua lp ngho gia D v phin nn dng cc mng iD=0.
Khi uDS < 0 th tip gip gia phin v S cng phn cc ng-c, iD=0. Nhvy, khi khng c uGS, MOSFET ch ct dng.
III. MOSFET khi c in p cc ca uGS
-+
uGS
uDS
-+
Lp ngho
N+
N+
Lp o in t
Phin P
Hnh 4-2 MOSFET khi c in p cc ca uGS

Gi thit uDS>0 v uGS >0. Do c uGS, hnh thnh in tr-ng trong lp xt.
D-i tc ng ca in tr-ng ny m cc l trng b y li su vo phin ,
li cc ion m Axpto khng dn in, MOSFET vn ch ct dng. Khi
tng uGS n gi tr ng-ng UTR, tr-ng lp xt bt u ht cc in t v pha
cc ca hnh thnh lp o in t ni gia cc S v cc D gi l knh dn. Knh
dn bc cu qua vng ngho gia D v phin v vy c th cho dng i D chy
qua. dn in ca knh dn tng theo uGS v khi uGS tng, mt cc in t
trong knh dn tng, knh dn giu cc in t. Knh dn gm ton cc in t
nn gi l knh dn loi N. Do tn ti knh dn nn xut hin lp ngho mng
gia knh dn v phin hnh thnh lp ngn cch gia knh dn v phin .
Knh dn -c hnh thnh do cm ng in tr-ng nn loi MOSFET ny cn
-c gi l loi knh cm ng.
Page 58

Mi MOSFET c gi tr ng-ng xc nh, ph thuc vo mc pha tp
trong phin v cc thng s ch to khc. i vi MOSFET giu gi tr ny
khong 0,5 n 3 V.
1.MOSFET khi uDS nh:
Khi uDS cn nh (khong 1V) v uGS ln hn UTR (c knh dn), mt cc
in t trong knh dn l ng u, MOSFET hot ng nhin tr c dng
mng t l tuyn tnh vi uDS vi h s t l ph thuc vo uGS. Quan h ny -c
biu din qua -ng lin nt trn th hnh 4-2. Vng lm vic ny -c gi l
vng in tr.
c tuyn biu din vng in tr theo biu thc sau:
iD= 2K(uGS- UTR)uDS
(4.1)
in tr knh dn s l: uDS/iD v l hm bin i tuyn tnh theo uGS.
Hng s K l h s dn ph thuc vo vt liu v kch th-c ch to:
K
e ox W
2tox L
(mA/ V2),
(4.2)
trong el linh ng in t trong cht bn dn v oxl hng s in mi

ca lp xt. W v L l kch th-c cc ca (L l chiu di dc theo knh dn v
W l chiu rng cc ca), tox l dy lp xt.
iD
uDS
Hnh 4-2 c tuyn V-A khi uDS nh
-+
uGS
uDS
-+
Lp ngho
N+
N+
Knh dn
Phin P
Hnh 4-3 MOSFET khi tng uDS

Page 59
Khi uDS tng, in p uDS phn b dc theo knh dn: ti cc ngun S bng
0 v ti cc D bng uDS. Chnh lch in p qua lp xt gn D l
u GS-uDS nh
hn uGS. in tr-ng trong lp xt gn cc mng s yu nn b dy knh dn s
nh hn (hnh 4-3).
Do tit din knh dn gim dn v pha D nn c tuyn V-A tr nn phi
tuyn (-ng t nt trn th hnh 4-2), ging ch in tch khng gian ca
n in t nn gi l ch Trit (vng trit) :
iD= K[2(uGS- UTR)uDS-u2DS]
(4.3)
2.MOSFET khi uDS ln
Tip tc tng uDS ti gi tr gii hn m knh dn c dy bng khng
(tht li) ti cc mng, in p st trn lp xt dn ti UTR.
Gi tr gii hn ca uDS -c tnh t iu kin:
uGS- uDS = UTR => uDS= uGS- UTR
(4.4)
Khi uDS tng n gi tr gii hn trn gi l ng-ng tht, dng i D vn tn
ti do lp o in t vn ni ti cc mng -c nh in tr-ng phn cc ng-c
ca lp ngho. Bin dng qua knh dn -c xc nh duy nht qua in p
st trn knh dn. Dng in ny c gi tr khng i khi u DSv-t qu gi tr
ng-ng tht (uGS- UTR). Vng lm vic ny gi l vng dng khng i:
iD= K(uGS- UTR)2
(4.5)
Nh- vy c tuyn V-A biu th quan h gia dng iD v in p uDS ca
MOSFET giu knh dn N nh- trn hnh 4-4.
iD
uDS= uGS- UTR
uGS> UTR> 0
uGS= UTR
uDS
Hnh 4-4 c tuyn V-A cc mng ca MOSFET giu knh dn N

c tuyn gm ba vng:
Vng ct dng khi uGS< UTR (ch-a c knh dn):
iD=0
Page 60

Vng Trit khi uGS> UTR(c knh dn) v 0 <uDS< (uGS- UTR):
Vng dng khng i uGS >UTR v uDS (uGS- UTR):
iD= K(uGS- UTR)2
-ng bin gii gia vng trit v vng dng khng i l -ng
Parabn: iD= Ku2DS , uDS= uGS- UTR. Trong vng trit iD ph thuc c vo uGS v
uDS, vng dng khng i dng in ch ph thuc vo (uGS- UTR)
c tuyn V-A gia dng iG v uGS trn hnh 4-5a. Dng in cc ca qua
lp in mi SiO2 lun bng khng vi mi gi tr ca uGS.
c tuyn truyn dn gia iD v uGS trn hnh 4-5b. Dng in iD ch xut
hin khi uGS> UTR.
iG
uGS
(a)
iD
Ch giu
(b)
|
UTR
uGS
Hnh 4-5 c tuyn V-A cc ca (a) v c tuyn truyn dn (b)

ca MOSFET giu knh dn N
4.1.2. MOSFET ngho (Depletion) knh dn N
(a)
D
uDS= uGS- UTR
G
B
S
vng giu uGS>0

uGS=0
vng ngho uGS<0
(b)
uGS= UTR< 0
uDS
Page 61

Hnh 4-6 K hiu (a) v c tnh V-A cc mng (b)
ca MOSFET ngho knh dn N
MOSFET knh dn N c th lm vic ch ngho khi u GS m gi l
MOSFET ngho knh dn N. Bng cch -a vo mt lp cc ion d-ng no t
gia lp in mi v phin P, lp ion ny thu ht cc in t trong phin
hnh thnh knh dn. Knh dn cn c th l khi bn dn N -a vo gia lp
in mi v phin P. MOSFET ngho tn ti knh dn ngay c khi ch-a c u GS
nn cn -c gi l MOSFET c knh t sn.
MOSFET ngho knh dn N -c k hiu nh- hnh 4-6a. MOSFET ngho
knh dn N c in p ng-ng UTR m. c tuyn V-A gia dng mng v in
p mng - ngun trn hnh 4-6b. c tuyn cng gm ba vng:
Vng ct dng khi uGS< UTR (uGS m hn UTR)
iD=0
Vng Trit khi uGS> UTR (uGS d-ng hn UTR) v 0 <uDS< (uGS- UTR):
iD= K(2(uGS- UTR)uDS-u2DS)
Vng dng khng i khi uGS >UTR v uDS (uGS- UTR):
iD= K(uGS- UTR)2
Khi uGS > 0 v d-ng ln, l-ng cc in t trong knh dn tng, dng i D
tng, MOSFET lm vic ch giu. Khi uGS < 0 v m i, l-ng cc in t
knh dn gim, iD gim, MOSFET lm vic ch ngho. Nh- vy MOSFET
ngho c th lm vic c ch giu v ngho. Trn c tuyn truyn dn gia
dng iD v uDS, dng iD xut hin t UTR c gi tr m (hnh 4-7).
iD
Ch ngho
UTR
Ch giu
uGS
Hnh 4-7 c tuyn truyn dn MOSFET ngho knh dn N

c tuyn iG v uGS cng ging nh- MOSFET giu: dng iGlun bng
khng vi mi gi tr uGS.
4-2.Tranzito hiu ng tr-ng loi JFET knh dn n
4.2.1 Cu to
JFET (Junction FET) l tranzito hiu ng tr-ng c tip gip PN. Cu to
v k hiu ca JFET knh dn N trn hnh 4-8.
Page 62

T phin pha tp nh loi P, bng cng ngh quang khc v khuch tn,
ln l-t -a vo cc khi bn dn N lm knh dn v 3 khi bn dn N, P, N pha
tp mnh gn vo cc cc S,G,D.
Tip gip PN gia knh dn v cc ca hnh thnh lp ngho. B rng lp
ngho c th thay i -c nh in tr-ng phn cc ng-c gia knh dn v cc
ca, do vy c th thay i -c tit din A ca knh dn.
in tr ca knh dn -c xc nh t in tr xut ca cht bn dn
loi N, chiu di hiu dng knh L, tit din hiu dng A. Dng in i D c th
iu khin -c bng cch thay i in tr knh dn.
S
G
D
L
N+
P+
N+
Lp ngho
Knh dn N
Phin P
(a)
D
K hiu:
G
S
(b)
Hnh 4-8 Cu to (a) v k hiu (b) ca JFET knh dn N
4.2.2 Hot ng ca JFET khi thay i uDS
I. Khi uDS nh
-+
- +
uGS
S
N+
uDS
G
P+
A Knh dn
N
Phin P
D
N+
Lp ngho
Hnh 4-9 JFET khi uDS cn nh
Page 63

in p uGS m to ra phn cc ng-c gia cc ca v phin lm cho
rng lp ngho tng, tit din knh dn A nh li. Khi u GS m t n gi tr
ng-ng UTR, lp ngho m rng hon ton knh dn, in tr knh dn tin ti
v cng, iD= 0, JFET ri vo ch ct dng.
Khi uGS > UTR(uGS d-ng hn UTR), uDS cn nh, rng lp ngho ng
u t S n D, quan h dng iD v uDS l tuyn tnh, JFET lm vic ch in
tr. Khi uDS tng, in p phn b dc theo knh dn tng dn t S n D, phn
cc ng-c tng, rng lp ngho m rng, knh dn c tit din nh dn, quan
h dng iD v uDS tr nn phi tuyn, JFET lm vic ch trit.
-+
uDS
- +
uGS
N+
P+
Knh dn N
N+
Lp ngho
Phin P
Hnh 4-10 JFET khi uDS tng

II. Khi uDS ln.
Khi uDS tng n khi tit din knh dn ti D tin ti 0, knh dn b tht li,
cc in t tri qua vng tht vi tc khng i, dng i D qua knh dn s
khng i, JFET lm vic ch dng khng i.
4.2.3. c tuyn V-A ca JFET
c tuyn V-A ca JFET biu din quan h gia iD v uDS (hnh 4-11) gm
3 vng nh- MOSFET:
iD
uGS >0
uGS=0V
uGS<0
uGS= UTR<0
uDS
Page 64

Hnh 4-11 c tuyn V-A cc mng ca JFET
Vng ct dng khi uGS< UTR (uGS m hn UTR):
iD=0
Vng trit khi uGS >UTR (uGS d-ng hn UTR) v 0<uDS< (uGS- UTR):
iD= K(uGS- UTR)2
H s K i vi JFET -c tnh theo cng thc sau:
K
I DSS
hng, UP= UTR, iD= IDSS= K.UP2 khi uGS = 0
2
UP
(4.6)
JFET ch hot ng vi uGS m, khi uGS d-ng tip gip PN gia cc ca v

knh dn phn cc thun, dng iG nhit phn cc thun, uGS s khng iu
khin -c dng qua knh dn na. c tuyn V-A gia iG v uGS nh- trn hnh
4-12a: vng lm vic ca JFET l vng GS phn cc ng-c, iG = 0.
iG
iD
IDSS
Ch ngho
Vng lm vic
(a) c tuyn cc ca
uGS
UP=UTR
uGS
(b) c tuyn truyn dn
Hnh 4-12 c tuyn V-A cc ca ca JFET.

c tuyn truyn dn ca JFET (hnh 4-12b) ct trc iD ti iD=IDSS khi uGS
= 0. Vng lm vic l ch ngho ng vi uGS < 0
4-3 tranzito hiu ng tr-ng loi GaAsMESFET
MESFET (Metal Semiconductor FET) l tranzito hiu ng tr-ng c cc
ca kim loi v knh bn dn.
GaAs l cht bn dn hp cht hai nguyn t gallium (nhmIII) v arsenic
(nhm V) c c tnh ging silicon nh-ng c linh ng in t cao gp 5 ln
so vi silicon v vy m tc chuyn trng thi t ct dng sang bo ho rt
nhanh. Knh dn N ca GaAsMESFET -c lm t Gallium Arsenide.
GaAsMESFET -c ng dng nhiu trong cc mch khuch i tn s cao, cc
Page 65

mch lgic tc cao. linh ng cc l trng trong GaAs thp nn loi
MESFET knh dn P li t -c s dng.
Cu to v k hiu ca GaAsMESFET trn hnh 4-13. Cc ngun S v cc
mng D -c ni vi cc khi bn dn loi N pha tp mnh v ni vi nhau qua
knh dn N, trn phin GaAs khng pha tp c dn in rt thp, hnh
thnh lp ngho m bo cch in gia cc cc, gim in dung k sinh
nng cao tc cho GaAsMESFET. Lp kim loi gn vi cc ca th-ng l
titanium hoc nhm. Tip gip kim loi- bn dn hnh thnh hng ro Schottky,
lm vic nh- tip gip PN trong JFET.
Kim loi hng ro Schottky
S
G
D
Cht tip xc Ohmic
N+
Knh dn N
N+
(a)
K hiu:
Phin GaAs
khng pha tp
G
S
(b)
Hnh 4-13 Cu to (a) v k hiu (b) ca GaAsMESFET
c tuyn V-A gn ging nh- JFET c in p ng-ng UTR m. im
khc so vi JFET l: trong GaAsMESFET c bo ho tc xy ra hu nh- trn
ton b knh dn cn trong JFET ch xy ra trn on tht ca knh. V bo ho
tc c mc in tr-ng thp trong GaAs nn linh ng cc in t trong
GaAsMESFET cao. Mt im khc na ca GaAsMESFET l c knh dn ngn
nn trong vng dng khng i iD vn ph thuc nh vo uDS, -ng c tuyn
V-A dc hn (hnh 4-14).
iD
uGS=0
uGS<0
Page 66

uGS =UTR
uDS
Hnh 4-14 c tuyn V-A cc mng ca GaAsMESFET

c tuyn cng gm ba vng nh- JFET:
Vng ct dng uGS<UTR(uGS m hn UTR)
iD=0
Vng Trit uGS>UTR (uGS d-ng hn UTR), uDS< (uGS-UTR)
iD= K[2(uGS- UTR)uDS-u2DS](1+uDS)
(4.7)
iD= K(uGS- UTR)2(1+uDS),
(4.8)
-1
gi l h s iu ch knh dn c tr s 0,05 n 0,2 V . in p ng-ng
UTRkhong 0,5 n 2,5V
4-4 Phn cc cho FET
Phn cc cho FET, chn im lm vic gia vng dng khng i. Cc
gi tr ti hn cn l-u l im ct dng i D=0, vng trit, dng cc mng cc i
IDmax v in p cho php cc i trn DS: UDS0.
Gi tr in p phn cc u vo UGG -c chn sao cho tn hiu ra i
xng c bin cc i cn nm trong vng dng khng i. S phn cc
tng qut cho FET nh- trn hnh 4-15.
RD
b
iG
G
+ uGS
UGG
+
uDS
S
Vng Trit
IDmax
iD
Q D
iD
UDD
-ng ti
Q
IDQ
uGS=UGSQ
iS
b'
(a)
(b)
UDSQ
UDS0
uDS
Hnh 4-15 Phn cc cho MOSFET

Mch gm hai ngun UGG cung cp in p mt chiu cho cc ca v ngun
UDD cung cp in p cho knh dn ngun-mng.
im lm vic Q(IGQ,UGSQ,IDQ,UDSQ) lun c IGQ = 0 v UGSQ -c xc nh tu
theo cu trc mch phn cc u vo. Cc gi tr I DQ,UDSQ -c xc nh theo cu
trc mch phn cc u ra. Trn c tuyn ra (c tuyn cc mng), im lm
vic l giao im -ng ti vi -ng c tuyn tnh ng vi u GS = UGSQ(hnh 415b).
-ng ti theo s hnh 4-15:
Page 67

iD
U DD uDS
RD
(4.9)
im lm vic Q -c chn trong khong gia on MN ca -ng ti.

Thc t c th to ra hai ngun UGGv UDD t mt ngun theo cc s thng
dng d-i y.
1. Phn cc bng phn p (MOSFETgiu)
im lm vic Q(IGQ,UGSQ,IDQ,UDSQ), vi: IG=0, nn:
IGQ=0
(4.10)
Theo s hnh 4-16, in p GS lun bng in p phn p trn RB:
UGSQ= uGS =
RB
.U DD
RA RB
FET lm vic vng dng khng i: iD= K(uGS-UTR)2

IDQ= K(UGSQ-UTR)2
Theo s , ph-ng trnh -ng ti: uDS= UDD- iD.RD
UDSQ= UDD- IDQ.RD
(4.11)
(4.12)
(4.13)
+ UDD -
RD
RA
iD
Q
G
RB
iG
+
uGS
-
+
uDS
iS
Hnh 4-16 Phn cc bng phn p

Trong s , in p uGS lun d-ng nn mch ny ch p dng cho MOSFET
giu knh dn N.
2. T phn cc(MOSFET ngho v JFET)
Page 68

+ UDD -
RD
iD
Q
iG
RG
+
uGS
-
+
uDS
RS
iS
Hnh 4-17 T phn cc

RG trong s hnh 4-17 c gi tr bt k do dng iG=0 nn in p trn n
lun bng khng, khng nh h-ng n cc gi tr phn cc. Th-ng RG c gi tr
ln hng M n hng chc M. Khng c dng in cc ca nn theo 4.10:
IGQ=0
Dng cc mng v cc ngun nh- nhau: iD=iS. in p trn GS bng in p
trn RS gia t v cc ngun v khng c in p trn RG:
UGSQ= -iSRS= -IDQRS
(4.14)
Dng in cc mng lm vic ch dng khng i:
IDQ=K(UGSQ- UTR)2= K(IDQRS+ UTR)2
(4.15)
IDQ l nghim ca ph-ng trnh bc hai. Dng in cc mng ch c ngha
khi c knh dn, chn nghim tho mn iu kin:
UGSQ > UTR,
(4.16)
in p cc ca d-ng hn gi tr ng-ng.
in p DS -c tnh theo -ng ti ca ra:
UDSQ=UDD- IDQ(RD+RS)
(4.17)
Trong tr-ng hp RS=0:
IGQ=0, UGSQ= 0
IDQ=K(- UTR )2
UDSQ=UDD- IDQ .RD
in p uGS lun m nn mch ny ch p dng cho JFET v MOSFET ngho
knh dn N.
3. Phn cc hi tip
Page 69

+ UDD -
RD
RA
iD
Q
G
RB
iG
+
uGS
-
+
uDS
RS
iS
Hnh 4-18 Phn cc hi tip

Nh- BJT, phn cc cho FET kt hp n nh im lm vic. Ph-ng php
phn cc hi tip c bn bng in p song song hoc dng in ni tip. Hnh 418 l phn cc hi tip dng in ni tip, vi:
UG=
RB
.U DD ,
RA RB
(4.18)
uGS = UG- iSRS, iS = iD

(4.19)
UGSQ = UG - IDQRS
(4.20)
Dng in cc ca bng khng: IGQ= 0
FET lm vic vng dng khng i: ID= K(uGS-UTR)2, nh- 4.12:
IDQ= K(UGSQ-UTR)2
Thay gi tr UGSQ:
IDQ= K[(UG-UTR)-IDQ.RS]2
(4.21)
Gii ph-ng trnh bc hai:
I2DQ.R2S-IDQ[1/K +2 RS(UG-UTR)]+(UG-UTR)2=0,
(4.22)
tnh -c IDQ, chn nghim tho mn: UGSQ d-ng hn UTR: UGSQ>UTR.
UDSQ=UDD- IDQ(RD+RS)
Tr-ng hp RS ln: RS(UG-UTR)>>1/K th c th tnh gn ng:
I2DQ.R2S-2IDQ RS(UG-UTR)+ (UG-UTR)2=0
IDQ= (UG-UTR)/ RS
Khi RS=0 th:
IDQ=K(UG-UTR)2
in p uGS c th m hoc d-ng tu thuc gi tr in p UG nn ph-ng
php ny c th p dng cho tt c cc loi FET.
So vi BJT, FET c mt s c tnh khc bit sau:
Page 70

1.
FET l cu kin iu khin bng in p, BJT iu khin bng dng

in. FET thch hp vi nhng ngun tn hiu ch cung cp dng rt
nh, BJT thch hp vi ngun tn hiu cung cp dng ln.
2.
FET dn in ch nh cc phn t mang in a s, cc phn t dn
in trong BJT gm c cc phn t thiu s ph thuc nhiu vo
nhit v cc yu t nng l-ng bn ngoi nn FET lm vic n
nh hn cc mi tr-ng khc nhau.
3.
H s tp m ca FET nh hn BJT (do khng c tp m ti hp gia
cc phn t mang in tri du) nn FET rt thch hp cho cc tng
u vo tn hiu nh, c bit vi cc thit b yu cu tp m nh.
4.
Cu trc FET i xng, cc cc D v S trong FET ging nhau, nn
c th i ln -c cc D cho S. BJT c cc E hon ton khc cc C.
5.
Do dng cc ca cch in thc t rt nh nn cng sut iu khin
cc ca i vi FET rt nh, c th s dng -c trong cc mch
cng sut nh, rt thch hp cho ch to cc mch tch hp (IC). Hn
na, tr khng vo ca FET rt ln nn c th thch ng vi nhiu
loi ngun tn hiu.
4.5. Thyristor
4.5.1. Diode Shockley
a. Cu to, k hiu
Diode Shockley l mt linh kin bn dn c cu trc gm 4 lp bn dn pn-p-n xen k vi nhau, kt hp vi 2 in cc: Cc Anode (A) v cc Cathode
(K). Diode Shockley hot ng nh mt chuyn mch on_off v s tn ti
mt trng thi sau mi ln c kch m hoc ngt.
A
A
p++
n
p+
n++
p
J1
n
J
p 2
J3
n
b. Nguyn l hot ng
Page 71

U AK 0 : Khi U AK nh , tip gip J1 v J3 c phn cc ngc, khi
dng qua diode Shockley l dng r ngc I D 0 , min c tuyn ng vi iu
kin ny c gi l min chn ngc. Nu UAK tng n mt gi tr in p
nh thng ngc th tip gip J1 v J3 ln lt b nh thng, dng qua diode
tng mnh.
U AK 0 : Tip gip J2 c phn cc ngc nn dng qua diode
Shockley l dng ngc bo ha I D 0 , cp Transistor ch ngt, min c
tuyn tng ng c gi l min chn thun. Tng in p UAK n gi tr
ln nh thng tip gip J2, khi diode bt u thng (on), gi tr UAK ti
im c gi l in p nh thng thun (Breakover Voltage). Tuy nhin
trong cu trc ca diode Shockley c s hi tip dng nn cng dng qua
diode Shockley tng mnh v a cp Transistor vo trng thi bo ha. Khi
diode Shockley tng ng vi mt in tr thun c gi tr nh do in p
UAK gim t ngt. Nu tip tc tng in p UAK khi diode Shockley s hot
ng nh mt in tr thun. Min c tuyn khi c gi l min dn
thun a diode Shockley tr v trng thi ngt phi gim in p UAK sao
cho dng qua diode ID nh hn dng duy tr IH.
Ngoi ra, c th kch m diode Shockley bi mt xung c bin thin
du
ln. Do cc in dung tip gip k sinh trong mi Transistor chng li

dt
s thay i in p gy nn dng in ln kch m cho diode Shockley.
Do diode Shockley ch tn ti ti mt trng thi sau mi ln c kch m
hoc ngt nn c th coi diode Shockley nh mt ci cht (latch).
4.5.2. Diac
Diac l linh kin bn dn gm 2 diode Shockley c ghp song song
nhng ngc chiu nhau nn c th dn dng theo c 2 chiu. Diac c 2 in p
ngng nh thng, c kch m 1 ln trong mi na chu k. Mi ln ngun
xoay chiu o cc tnh, Diac ngt dng (off) ti thi im Diac c kch m
trong na chu k tip theo, khi Diac chuyn sang trng thi thng (on).
Page 72
in p ngun
Dng qua Diac
4.5.3. SCR
a. Cu to:SCR (Silicon Controlled Rectifier - Chnh lu c iu khin) c
cu trc ging diode Shockley nhng c thm cc ca G (Gate) ng vai tr l
cc iu khin.
A
p++
n
p+
n++
IB1
J1
n
J
p 2
J3
n
p
n
p
n
p
n
T1
IC2=2.IB2
IC1
G
IB2
T2
b. Nguyn l hot ng
U AK 0 : c tuyn Volt_Ampere ca SCR trong min ny tng t
vi c tuyn ca diode Shockley.
Page 73

U AK 0
Nu VG 0 : SCR hot ng nh mt diode Shockley.
Nu VG 0 , xut hin dng cc ca IG cng chiu vi dng
ngc bo ha trong SCR do tip gip J2 b nh thng vi in p UAK nh
hn nhiu so vi trng hp VG 0 ; c th ni in p VG iu khin in p
ngng nh thng UBO. in p VG cng ln th in p UBO cng nh. Sau
khi c kch m, cc ca G mt vai tr iu khin v SCR s dn cho n khi
dng qua SCR nh hn dng duy tr IH.
Vy c th kch m Thyristor theo 2 cch: tng in p UAK hoc cp mt
in p ti cc ca G bi mt xung c nng lng rt nh. iu ny th hin c
tnh khuch i cng sut ca mch chnh lu s dng SCR.
c. ng dng
Do ch dn dng theo mt chiu nn SCR cng c ng dng trong cc
mch chnh lu. im khc bit ca SCR souvi
Diode chnh lu thng thng
L
RL
l c th iu khin c gc pha ca tn hiu ra trn ti (iu
uS
khin cng sut trn ti). Ngy nay,us SCR l mt trong nhng linh kin
chnh lu c nhy tt nht.
Xt mch chnh lu c iu khin n gin nht. Diode D c tc dng bo
v SCR trong na chu k m.
Ban u, SCR ngt, in p trn ti u L 0 . Sau , in p dng c
a ti cc ca G ( U GK 0 ), SCR c kch m ti gi tr in p u s U BO
tng ng vi mt gi tr UGK xc nh. Khi SCR tng ng vi mt in
tr thun c gi tr rt nh, nn in p trn ti
u L u s . C th mc thm
bin tr VR iu chnh in p UGK, tc l iu chnh in p ngng nh

thng UBO nn c th iu khin c gc pha ti SCR c kch m.
Page 74

Ngng nh thng
RL
VR
uL
us
us mch nh trn th SCR c th c kch m ti
Tuy nhin, i vi s
gc pha ln nht l /2, do ti thi im us t gi tr cc i nu SCR vn
cha c kch m th khng th kch m ti gc pha ln hn. Mch trn cn
c gi l mch khng ch pha 900.
Ngng nh thng
Vy mun kch m SCR ti gc pha ln hn /2 c th mc thm t in C.

RL
us
uL
VR
SCR
Ngng kch
D
C
uC
uC u D uGK
in p uC dch pha so vi in p ngun mt gc trong khong ( 0 ),
2
ng vai tr ging in p ngun a in p dng ti cc ca G, nn c th
kch m SCR ti gc pha bt k trong khong ( 0 ) v c gi l mch
khng ch pha 1800.
4.5.4. Triac
a. Cu to
Triac l mt linh kin bn dn gm 2 SCR c ghp song song nhng
ngc chiu, 2 cc ca c ni vi nhau. i vi Triac, khng cn cc Anode
Page 75

v Cathode m thay vo l 2 cc chnh MT1 v MT2 (Main Terminal). Cc G
vn ng vai tr l cc iu khin.
b. Nguyn l hot ng
Triac tng ng vi mt cp SCR nn c kh nng dn dng theo c 2
chiu. Tng ng vi mi gi tr ca in p cc ca VG, Triac s c 2 ngng
nh thng khng i xng. Khi , Triac c kch m mt ln
n
us
trong mi na chu k. Tuy nhin, vai tr ca 2 cc MT1 v MT2 l khng
ging nhau. Dng kch cc ca G phi c a t cc MT2.
c.ng dng
Khc vi SCR c ng dng trong cc mch cng sut ln, Triac c
s dng trong mt s mch cng sut nh, v d nh chuyn mch n bo hiu
trong gia nh. Khu di pha RC c tc dng kch m Triac ti mt gi tr gc pha
bt k trong khong ( 0 ).
n
us
Page 76

Tuy nhin, do Triac c kch m ti cc in p ngng khng i xng
gy nn cc thnh phn hi trong dng sng u ra, do thng Diac c mc
thm vo mch nh sau:
n
us
4.5.5. UJT (UNIJUNCTION TRANSISTOR TRANSISTOR N NI).

Transistor thng (BJT) gi l Transistor lng cc v c hai ni PN trong
lc UJT ch c mt c nht ni P-N. Tuy khng thng dng nh BJT, nhng
UJT c mt s c tnh c bit nn mt thi gi vai tr quan trng trong cc
mch to dng sng v nh gi.
1. Cu to v c tnh ca UJT:
Hnh sau y m t cu to n gin ho v k hiu ca UJT
Mt thi bn dn pha nh loi n- vi hai lp tip xc kim loi hai u

to thnh hai cc nn B1 v B2. Ni PN c hnh thnh thng l hp cht ca
dy nhm nh ng vai tr cht bn dn loi P. Vng P ny nm cch vng B1
khong 70% so vi chiu di ca hai cc nn B1, B2. Dy nhm ng vai tr
cc pht E.
K hiu ca Transistor mt tip gip UJT nh trong hnh B09.2 a v b.
Page 77
Hnh B09.1.
Hnh B09.2.
Tr khng gia base 1 v base 2 c o khi dng emitter =0 c gi l

tr khng gia cc base (interbase) RBB v c gi tr in hnh khong 5K
10 K Ohm.
Hnh B09.3 ch ra mch tng ng n gin ca UJT vi cc Base loi
N. Tr khng RBB c phn i bi chuyn tip P-N (biu th bi diode) thnh
2 in tr RB1 v RB2 , m tng ca n bng RBB .
Trong ch hot ng thng thng, in p VBB c cung cp cho
base 1 v base 2, vi base 2 dng hn so vi 1. Khi khng c dng IE , thanh
bn dn s hot ng ging nh mt b phn p n gin v c mt phn in p
xc nh ca VBB xut hin trn RB1. T s n c gi l t s cn bng
(stand-off) ni v gi tr ca n khong khong 0,5 n 0,9 . T s ny c cho
bi:
in p VBB khin cathode ca diode ca dng hn so vi B1 v c gi
tr in th n.VBB . Nu in p emitter VE nh hn gi tr ny, chuyn tip s
c phn cc ngc v ch c mt dng emitter ngc nh chy qua.
Nu VE ln hn (nVBB + VD) , vi VD l in p ngng ca chuyn
tip, th diode s c phn cc ngc v c mt dng emitter thun IE chy
qua. Dng ny do cc l trng khuch tn vo phn thp hn ca thanh bn
dn v lm tng dn (do s lng cc ht dn t do tng). iu ny khin cho
in tr RB1 gim. Khi RB1 gim, in p n.VBB cng gim, bi th c s gia
tng in p thun qua diode v tt nhin dng qua diode cng tng. Qu trnh
Page 78

tch lu ny tip tc cho n khi t n gi tr dng IE tc t n trng thi bo
ho ca thanh bn dn ti min RB1 . Bt u t cc iu kin ny, in p VE ,
m c gi tr nh nht Vv (in p im trng - valley voltage), bt u tng khi
dng tng, ging nh c tuyn thng thng ca diode.
c trng ca c tuyn dng/p ca UJT nh ch ra hnh B09.4.
Trong ng cong ny, c 3 min lm vic:
1.
0 < VE < VP : dng IE l rt nh v tr khng vo rt cao.
2.
VP < VE < Vv : tr khng vo l m, c ngha mt s gia tng dng s
khin cho in p gim.

3.
VE > Vv : tr khng vo li tr nn dng v c gi tr tng t vi tr
khng ca diode khi dn.

Cc im c trng:
1.
VP c gi l in p nh v bng:
VP = n.VB2B1 + VD = n.VBB + VD.
2.
Vv : in p im trng.
3.
Iv : dng in im trng.
Transistor UJT c dng ch yu trong cc mch chuyn mch, nh thi,

mch trigger v mch to xung.
Page 79
CHNG 5: LINH KIN QUANG IN T
Trong chng ny, chng ta ch cp n mt s cc linh kin quang

in t thng dng nh quang in tr, quang diod, quang transistor, led cc
linh kin quang in t qu c bit khng c cp n.
I.QUANG IN TR (PHOTORESISTANCE).
L in tr c tr s cng gim khi c chiu sng cng mnh. in tr ti (khi
khng c chiu sng - trong bng ti) thng trn 1M, tr s ny gim rt
nh c th di 100 khi c chiu sng mnh
Nguyn l lm vic ca quang in tr l khi nh sng chiu vo cht bn dn

(c th l Cadmium sulfide CdS, Cadmium selenide CdSe) lm pht sinh cc
in t t do, tc s dn in tng ln v lm gim in tr ca cht bn dn.
Cc c tnh in v nhy ca quang in tr d nhin ty thuc vo vt liu
dng trong ch to.
Page 80
V phng din nng lng, ta ni nh sng cung cp mt nng lng

E=h.f cc in t nhy t di ha tr ln di dn in. Nh vy nng lng
cn thit h.f phi ln hn nng lng ca di cm.
Vi ng dng ca quang in tr: Quang in tr c dng rt ph bin
trong cc mch iu khin
1. Mch bo ng:
Khi quang in tr c chiu sng (trng thi thng trc) c in tr

nh, in th cng ca SCR gim nh khng dng kch nn SCR ngng. Khi
Page 81

ngun sng b chn, R tng nhanh, in th cng SCR tng lm SCR dn in,
dng in qua ti lm cho mch bo ng hot ng.
Ngi ta cng c th dng mch nh trn, vi ti l mt bng n c
th chy sng v m v tt vo ban ngy. Hoc c th ti l mt relais iu
khin mt mch bo ng c cng sut ln hn.
2. Mch m in t ng v m dng in AC:
Ban ngy, tr s ca quang in tr nh. in th im A khng m

Diac nn Triac khng hot ng, n tt. v m, quang tr tng tr s, lm tng
in th im A, thng Diac v kch Triac dn in, bng n sng ln.
II. QUANG DIOD (PHOTODIODE).
Ta bit rng khi mt ni P-N c phn cc thun th vng him hp v dng
thun ln v do ht ti in a s (in t cht bn dn loi N v l trng cht
bn dn loi P) di chuyn to nn. Khi phn cc nghch, vng him rng v ch
c dng in r nh (dng bo ha nghch I0) chy qua.
Page 82
By gi ta xem mt ni P-N c phn cc nghch. Th nghim cho thy

khi chiu sng nh sng vo mi ni (gi s diod c ch to trong sut), ta
thy dng in nghch tng ln gn nh t l vi quang thng trong lc dng in
thun khng tng. Hin tng ny c dng ch to quang diod.
Khi nh sng chiu vo ni P-N c nng lng lm pht sinh cc cp
in t - l trng st hai bn mi ni lm mt ht ti in thiu s tng ln.
Cc ht ti in thiu s ny khuch tn qua mi ni to nn dng in ng k
cng thm vo dng in bo ha nghch I0 t nhin ca diod, thng l di
vi trm nA vi quang diod Si v di vi chc A vi quang diod Ge.
nhy ca quang diod ty thuc vo cht bn dn l Si, Ge hay
Selenium Hnh v sau y cho thy nhy theo tn s ca nh sng chiu
vo cc cht bn dn ny:
III. QUANG TRANSISTOR (PHOTO TRANSISTOR).
Quang transistor l ni rng ng nhin ca quang diod. V mt cu to,
quang transistor cng ging nh transistor thng nhng cc nn h. Quang
transistor c mt thu knh trong sut tp trung nh sng vo ni P-N gia thu
v nn.
Khi cc nn h, ni nn-pht c phn cc thuncht t do cc dng
in r (in th VBE lc khong vi chc mV transistor Si) v ni thu-nn
c phn cc nghch nn transistor vng tc ng.
Page 83

V ni thu-nn c phn cc nghch nn c dng r Ico chy gia cc thu
v cc nn. V cc nn b trng, ni nn-pht c phn cc thun cht t nn
dng in cc thu l Ico(1+). y l dng ti ca quang transistor.
Khi c nh sng chiu vo mi ni thu nn th s xut hin ca cc cp

in t v l trng nh trong quang diod lm pht sinh mt dng in I do nh
sng nn dng in thu tr thnh: IC=(+1)(Ico+I)
Nh vy, trong quang transistor, c dng ti ln dng chiu sng u c
nhn ln (+1) ln so vi quang diod nn d dng s dng hn. Hnh trn trnh
by c tnh V-I ca quang transistor vi quang thng l mt thng s. Ta thy
c tuyn ny ging nh c tuyn ca transistor thng mc theo kiu cc pht
chung.
C nhiu loi quang transistor nh loi mt transistor dng chuyn
mch dng trong cc mch iu khin, mch m loi quang transistor
Darlington c nhy rt cao. Ngoi ra ngi ta cn ch to cc quang SCR,
quang triac
Page 84

Vi ng dng ca quang transistor:
ng hay tt Relais:
Trong mch ng relais, khi quang transistor c chiu sng n dn in

lm T1 thng, Relais hot ng. Ngc li trong mch tt relais, trng thi
thng trc quang transistor khng c chiu sng nn quang transistor ngng
v T1 lun thng, Relais trng thi ng. Khi c chiu sng, quang
transistor dn mnh lm T1 ngng, Relais khng hot ng ( trng thi tt).
IV. DIOD PHT QUANG (LED-LIGHT EMITTING DIODE).
quang tr, quang diod v quang transistor, nng lng caq nh sng
chiu vo cht bn dn v cp nng lng cho cc in t vt di cm. Ngc
li khi mt in t t di dn in rt xung di ho tr th s pht ra mt nng
lng E=h.f
Khi phn cc thun mt ni P-N, in t t do t vng N xuyn qua vng
P v ti hp vi l trng (v phng din nng lng ta ni cc in t trong di
dn in c nng lng cao ri xung di ho tr - c nng lng thp v
kt hp vi l trng), khi ti hp th sinh ra nng lng.
Page 85

i vi diod Ge, Si th nng lng pht ra di dng nhit. Nhng i vi
diod cu to bng GaAs (Gallium Arsenide) nng lng pht ra l nh sng hng
ngoi (khng thy c) dng trong cc mch bo ng, iu khin t xa).
Vi GaAsP (Gallium Arsenide phosphor) nng lng pht ra l nh sng vng
hay . Vi GaP (Gallium phosphor), nng lng nh sng pht ra mu vng
hoc xanh l cy. Cc Led pht ra nh sng thy c dng lm n bo,
trang tr Phn ngoi ca LED c mt thu knh tp trung nh sng pht ra
ngoi.
c nh sng lin tc, ngi ta phn cc thun LED. Ty theo vt liu

cu to, in th thm ca LED thay i t 1 n 2.5V v dng in qua LED ti
a khong vi mA.
Page 86

Giao Trinh Linh Kien Dien Tu GTVT

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Giao Trinh Linh Kien Dien Tu GTVT

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GIO TRNH LINH KIN IN T

CHNG I. LINH KIN TH NG

Nu hm i=f(u) l quan h phi tuyn (phng trnh i s bc cao, phng

GIO TRNH LINH KIN IN T

[E]: Volt (V)

Trong : : in tr sut [m]

GIO TRNH LINH KIN IN T

Khi nhit tng, s lng cc electron bt ra khi qu o chuyn ng

Hnh 2.1. nh hng ca nhit ti gi tr in tr ca vt dn

GIO TRNH LINH KIN IN T

trn R vi cng sut:

Nu dng in c cng cng ln th nhit lng tiu th trn R cng

Trong cc mch thc t, ti khi ngun cp, cng dng in mnh nn

Hnh 2.2. in tr than p

GIO TRNH LINH KIN IN T

Hnh 2.3. in tr dy qun

Hnh 2.4. in tr mng mng

GIO TRNH LINH KIN IN T

in tr nhit (Thermal Resistor -Thermistor):

GIO TRNH LINH KIN IN T

Quang tr l linh kin nhy cm vi bc x in t quanh ph nh sng

Ch ci th hai biu din dung sai:

V d: 8K2J: R=8,2K; =5%

GIO TRNH LINH KIN IN T

GIO TRNH LINH KIN IN T

GIO TRNH LINH KIN IN T

Nu in tr tiu th in nng v chuyn thnh nhit nng th t in tch

in dung c n v l F, tuy nhin trong thc t 1F l gi tr rt ln nn

GIO TRNH LINH KIN IN T

(a) C=200pF vi cht in mi l khng kh

(b) C=1,5F vi cht in mi l gm

b. Sai s: L chnh lch tng i gia gi tr in dung thc t v gi

Ctt: in dung thc t

f 0 : Z c : h mch i vi thnh phn mt chiu

d. H s nhit ca t in (TCC Temperature Co-efficient of Capacitor)

TCC cng nh th gi tr in dung cng n nh, do mi loi t ch hot

GIO TRNH LINH KIN IN T

2.2.3. Phn loi v k hiu

GIO TRNH LINH KIN IN T

T gm (Ceramic Capacitors): T gm l t khng phn cc c sn

GIO TRNH LINH KIN IN T

T in phn (Electrolytic Capacitors): T in phn cn c gi l

GIO TRNH LINH KIN IN T

T vi chnh (Trimmer): Khc vi t xoay l iu chnh din tch hiu

GIO TRNH LINH KIN IN T

Hnh 2.T vi chnh

2.2.4. Cch ghi v c tham

GIO TRNH LINH KIN IN T

GIO TRNH LINH KIN IN T

Nhn xt: Dung khng ca t t l nghch vi tn s f ca dng in. Tn s

2.3.2. c tnh ca cun dy

GIO TRNH LINH KIN IN T

o: t thm ca chn khng o=4.10-7 (H/m)

GIO TRNH LINH KIN IN T

Hin tng t cm:

Hin tng h cm:

2.3.3. Cc tham s ca cun cm

b.Tr khng ca cun dy

Cm khng ca cun dy:

GIO TRNH LINH KIN IN T

Q>> R , tn hao trn cun dy cng nh, dy cun l kim loi dn in

Nu f>fo, cun dy mang tnh dung nhiu hn tnh cm, nn fo c gi l

GIO TRNH LINH KIN IN T