DISCRETE SEMICONDUCTORS

DATA SHEET

ok, halfpage

M3D100

BD136; BD138; BD140

PNP power transistors
Product specification 1999 Apr 12
Supersedes data of 1997 Mar 26
Philips Semiconductors Product specification

PNP power transistors BD136; BD138; BD140

FEATURES PINNING
• High current (max. 1.5 A) PIN DESCRIPTION
• Low voltage (max. 80 V). 1 emitter
2 collector, connected to metal part of
APPLICATIONS mounting surface
• General purpose power applications, e.g. driver stages 3 base
in hi-fi amplifiers and television circuits.

handbook, halfpage
DESCRIPTION
2
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139. 3

1 2 3 Top view MAM272

Fig.1 Simplified outline (TO-126; SOT32)

and symbol.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BD136 − −45 V
BD138 − −60 V
BD140 − −100 V
VCEO collector-emitter voltage open base
BD136 − −45 V
BD138 − −60 V
BD140 − −80 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) − −1.5 A
ICM peak collector current − −2 A
IBM peak base current − −1 A
Ptot total power dissipation Tmb ≤ 70 °C − 8 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C

1999 Apr 12 2
Philips Semiconductors Product specification

PNP power transistors BD136; BD138; BD140

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 100 K/W
Rth j-mb thermal resistance from junction to mounting base 10 K/W

Note
1. Refer to TO-126 (SOT32) standard mounting conditions.

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −30 V − − −100 nA
IE = 0; VCB = −30 V; Tj = 125 °C − − −10 µA
IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
hFE DC current gain VCE = −2 V; (see Fig.2)
IC = −5 mA 40 − −
IC = −150 mA 63 − 250
IC = −500 mA 25 − −
DC current gain IC = −150 mA; VCE = −2 V;
BD136-10; BD138-10; BD140-10 (see Fig.2) 63 − 160
BD136-16; BD138-16; BD140-16 100 − 250
VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA − − −0.5 V
VBE base-emitter voltage IC = −500 mA; VCE = −2 V − − −1 V
fT transition frequency IC = −50 mA; VCE = −5 V; − 160 − MHz
f = 100 MHz
h FE1 DC current gain ratio of the IC = 150 mA; VCE = 2 V − 1.3 1.6
----------- complementary pairs
h FE2

1999 Apr 12 3
Philips Semiconductors Product specification

PNP power transistors BD136; BD138; BD140

MBH730
160
handbook, full pagewidth

hFE VCE = −2 V

120

80

40

0
−10−1 −1 −10 −102 −103 IC (mA) −104

Fig.2 DC current gain; typical values.

1999 Apr 12 4
Philips Semiconductors Product specification

PNP power transistors BD136; BD138; BD140

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32

E A

P1

P D

L1

1 2 3

bp w M c e1

Q e

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

L1(1)
UNIT A bp c D E e e1 L Q P P1 w
max
2.7 0.88 0.60 11.1 7.8 16.5 1.5 3.2 3.9
mm 4.58 2.29 2.54 0.254
2.3 0.65 0.45 10.5 7.2 15.3 0.9 3.0 3.6

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT32 TO-126 97-03-04

1999 Apr 12 5
Philips Semiconductors Product specification

PNP power transistors BD136; BD138; BD140

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 12 6
Philips Semiconductors Product specification

PNP power transistors BD136; BD138; BD140

NOTES

1999 Apr 12 7
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© Philips Electronics N.V. 1999
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SCA63
Date of release: 1999 Apr 12 Document order number: 9397 750 05575
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