Science & Technology Development, Vol 10, No.

03 - 2007

M HNH HA V M PHNG QU TRNH TO MNG Al2O3 BNG PHN X

MAGNETRON
Giang Vn Phc(1) , L V Tun Hng(2), Hunh Thnh t(3),

Nguyn Vn n(2)

(1)Trng i hc An Giang
(2) Trng i hc Khoa hc T nhin, HQG-HCM
(3) HQG-HCM
(Bi nhn ngy 16 thng 09 nm 2006, hon chnh sa cha ngy 22 thng 01 nm 2007)

TM TT: Al2O3 c ng dng rng ri lm cht gy xc tc di dng gm xp hoc dng

mng mng. N c th c to ra bng phng php phn x magnetron phn ng t bia kim loi hoc
trc tip t bia oxide.
Mc tiu ca bi vit ny l m phng xc nh cc iu kin thch hp nhm phn x mng
Al2O3 t vt liu Al kim loi bng h phn x mangetron RF v DC. Vic m phng c da trn
phng php Monte Carlo v cc tham s ban u k c cc tham s hnh hc ca h. Cng vic tnh
ton thc hin bng ngn ng lp trnh Matlab vi ch dng lnh kho st v ch ha
minh ha.
Cc kt qu bao gm (a) cc phn b gc v nng lng phn x ban u, (b) qu trnh chuyn di
cc ht phn x, (c) phn b khng gian, nng lng v gc ca ht phn x b mt , (d) s lng
ng ca mng c tnh n s khuch tn. Cc kt qu c so snh vi cc kt qu tng t ca cc
tc gi khc v vi kt qu thc nghim han thin m hnh.
1.GII THIU
K thut phn x c p dng rng ri nh vo kh nng to c rt nhiu loi mng. c bit l
vic to mng rn chng n mn trong cng nghip [4] m Al v Al2O3 l tiu biu. Mc d hin tng
v cc hiu ng ca phn x c nghin cu nhiu nhng m t l thuyt ca n th cha hon thin.
Cho n nay, vic ph mng v ti u ha cc tham s phn x ch yu l nh qu trnh thc nghim.
Hn na, trong trng hp oxyt nhm v h phn x mangetron RF v DC th vic m phng l ht sc
cn thit.
Bi vit ny trnh by m hnh MonteCarlo thc hin i vi qu trnh phn x Magnetron Sputter.
Phng php ny cho php kho st m hnh da trn cc nh lut vt l nhm nghin cu mng mng
v nh hnh Al2O3 v chuyn pha bng x l nhit sau .
Mng c d kin thc hin theo hai hng:
Phn x mng Al t vt liu nhm trong mi trng kh Ar v c oxyt ha sau trong mi
trng khng kh.
Phn x mng Al2O3 t vt liu nhm trong mi trng hn hp kh Ar: O2 .
Vt liu c chn l thy tinh v Si, phn x ng thi, nhm c th o c c sn phm
bng c phng php truyn qua kh kin t ngoi ( thy tinh) v hp thu hng ngoi ( Si).
Cng vic m phng c tin hnh trn cc i tng Al, Al2O3, Ti, TiO2 v Cu. Trong , cc kt
qu m phng trn Ti, TiO2 v Cu l so snh vi cc kt qu tin hnh ca cc tc gi khc cng
b [8, 9, 12,14] nhm i chng kt qu m phng.Cc kt qu i vi Al, Al2O3 c p dng vo thc
nghim v c hiu chnh han thin.

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TAP CH PHAT TRIEN KH&CN, TAP 10, SO 03 - 2007

2. M HNH M PHNG
2.1. Qu trnh phn x vt liu
Trong qu trnh phn x, do cc ht chuyn ng ng thi v ngu nhin nn rt kh m t qu
trnh bng mt vi cng thc ton hc n gin. Vi vic m phng bng my vi tnh, chng ta c kh
nng c lng c cc mi quan h gia cc tnh cht mng v cc iu kin thc nghim. Phng
php Monte Carlo (MC) ni chung gm mt s lng rt ln cc s kin ngu nhin to ra mt cng c
hu hiu vi mt t gi thit m phng qu trnh ny.
T mc tiu trn, vic nghin cu c tin hnh vi m hnh sau:
Phn x v cc iu kin m phng:
Bia:

Al, Al2O3

ng knh bia:

75 mm

ng knh min n mn:

50 mm

Si, SiO2

Kh phn x:

Ar:O2 ~ 10:1

p sut chn khng:

10 Torr
2

10 10 Torr

p sut phn x:

Khong cch bia: 40 mm

khng phn cc v khng c nung nng, nhit t nhin c lng c ti a c 200C.

Phn on phn x:
Di tc dng ca in trng v t trng trc giao, cc electron thu c ng nng ban u t
lp v plasma trn b mt cathode, chng ion ha kh lm vic (Ar). Cc ion dng ny tng tc trong
in trng hng v pha cathode v p vo b mt bia vi nng lng cao. , xy ra trao i nng
lng v ng lng, ng thi cc phn t ca b mt bia x y ln nhau lm bt ra cc ht bia. Trong
trng hp bia kim loi, 95% ht bt ra l nguyn t trung ha [8]. Cc ht ny c ng nng ban u E0
v gc xut pht {0, 0}, tun theo nhng phn b xc nh. Trong , 0 l gc cc gia phng
chuyn ng v php tuyn mt ngoi bia, 0 l gc phng v tng ng. Cc i lng ny thu c
nh cc tnh tan m phng phn x. Phn on ny ph thuc khng ch vo nng lng oanh tc Ebom
m cn vo nng lng lin kt b mt Eb ca vt liu bia.
Gi J(E0) l hm phn b ca cc ht theo nng lng ban u E0, chng ta c th vit:

dJ
E
=C
dE
( E + Eb )2

(1)

Trong C l h s chun ha. V nu gi E l tha s xc sut, E0 c th tnh c theo:

E0 =

( kEbom
k=

E b . 1E/ 2
+ Eb ) /( k .E bom ) 1E/ 2

4.m.M
( m + M )2

(2)
(3)

Trong M v m l khi lng nguyn t ca ht phn x v phn t kh gas.

Phn b gc dJ/d tun theo phn b cosine quen thuc nn ta c cc quan h sau:
0

/ 2 dJ
dJ
d =
d
0
d
d

(4)

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Science & Technology Development, Vol 10, No.03 - 2007

v

0 = 2...

(5)

Tng t trn , l cc tha s xc sut.

Ngoi ra, m phng cn tnh n tng tc gia cc ht phn x t cc lp di mt v cc ht trn
b mt bia.
2.2.Chuyn ng ca cc ht phn x:
S chuyn ti vt liu t bia n c th c m hnh ha v m phng theo cc va chm ngu
nhin gia chng v cc phn t kh lm vic. Do p sut tng i thp, tng tc ln nhau gia cc ht
kh lm vic c th b qua gp phn lm n gin ng k m hnh. Vic m phng tha nhn cc gi
thit sau:
Cc va chm ch xy ra gia bia v cc ht kh lm vic.
Cc va chm l n hi v nng lng ch mt do va chm.
Cc qung ng t do tc thi (current free path) l ng thng.
Tng tc th gia cc ht b v cc ht kh lm vic l nh b qua.
Sau khi ri bia, mi ht i qua on ng j (qung ng t do tc thi) v va chm vi cc ht
kh mi trng (c gi thit l t di chuyn). Va chm lm thay i nng lng v hng chuyn ng
ca ht phn x v ht tip tc di chuyn cho dn khi gp mt va chm khc (hnh 1). j c gi tr ngu
nhin v c xc nh nh qung ng t do trung bnh p v tha s xc sut 1:
j = p ln(1)
(6)
Vi p c tnh theo:

= .n g ( R g + R p ) 2 1 +

Tg M
Tp m

(7)

Trong R l ng knh nguyn t, n l mt nguyn t, T l nhit , cc ch s g v p k hiu

tng ng cho phn t kh v ht phn x.
Vic a i lng nhit vo nhm tnh n linh ng ca cc ht tham gia tn x.

Bia

Hnh1. M hnh va chm ca ht phn x vi cc

ht kh mi trng.

Hnh 2.M hnh hnh hc ca min khng gian

xy ra phn x.

Trc khi n b mt , mt ht vt liu phi tri qua mt chui cc va chm ngu nhin nh trn.
Nu gi l gc to bi ng ni tm ca hai ht v hng chuyn ng trc ca ht vt liu ti
thi im va chm, bin thin hng bay v nng lng ca ht vt liu c tnh theo:

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TAP CH PHAT TRIEN KH&CN, TAP 10, SO 03 - 2007

m. sin( 2)

M + m. cos( 2)

= arctan
=
Vi

E post
E pre

( M m) 2 . cos 2 + ( M + m) 2 sin 2
( M + m) 2

= arcsin 2

2 l mt tha s xc sut khc

(8)
(9)
(10)

M phng qu trnh chuyn ti mi ht c thc hin lin tc, qu o c theo di cho n khi
n that ra khi min lm vic hoc nng lng cn li nh hn nng lng kh lm vic hoc n c
.
Cc kt qu c ghi nhn khi ht n c bao gm v tr n, nng lng v gc ti.
2.3. Phn on lng ng
T kt qu cc phn b nng lng v gc thu c trn ca cc ht n , chng ta c th xem
xt qu trnh lng ng. Mt din tch nh c chn tm ca c kch thc 100 x 100 x 20 n v.
Mi ht lng ng c xem nh mt hnh cu c ng knh n v c t ngu nhin vo ta
(x,y) ca ma trn hai chiu 100 x 100. Ch cc ht c gc ti thch hp (nh hn hoc bng 600) mi c
kh nng to mng. Chng ta gi thit l c mt gii hn khuch tn b mt khi ht n mt v tr c
chn ngu nhin c ta (x,y,z(x,y)) n c th li hoc khuch tn n mt trong cc v tr gn
nht gim thiu nng lng di dng nng lng lin kt. Do , hnh vi ca ht c th l khuynh
hng khuch tn n v tr thch hp ln cn tun theo mt ro nng lng Vs nhm hn ch s
khuch tn ty tin.
i vi Vs ln, ht vt liu li ni m n ri vo, iu ny c gi l m hnh lng ng ngu
nhin. Ngc li, ht c th khuch tn n mt trong tm v tr so vi v tr ri: trn tri, trn, trn phi,
tri, phi, di tri, di, di phi hoc li v tr c vi mt la chn ngu nhin. Nh vy c 9 kh
nng tng ng vi 9 v tr ln cn nhau. K hiu z(x,y) ch cao ca cc lp lng ng ti v tr
xc nh (x,y). Xc sut khuch tn n mt trong cc v tr ni trn ph thuc vo nng lng ca cc v
tr ln cn, ht c khuynh hng ri vo ni c nng lng thp nht ri mt mt phn nng lng cho
s khuch tn v nng lng lin kt b mt. S khuch tn ny c th duy tr cho n khi nng lng
ht t cc tiu. Tuy nhin, trong bi vit ny, chng ta gi thit s khuch tn xy ra nhiu nht l 02
cp. Cc hnh vi nh trn ca ht cng hm v hiu ng che ph v b qua s ti pht x.
Kt qu ca m phng phn on ny l ma trn 3 chiu lu tr cc v tr ht lng ng trn cc
lp v mt ma trn ba chiu khc lu tr nng lng d ca mi v tr. T , chng ta c th trch xut
hnh thi, nng lng d v xp ca mng. M hnh da trn cc gi thit tng t cng c cc
tc gi khc cng b trong [1, 8].
3. KT QU V BN LUN
So snh th phn b s ht theo nng lng t m phng 100000 ht vi cc kt qu tng t ca
cc tc gi khc cng b, chng ta c c s ph hp tt, chng hn i vi Ti (hnh 3), do cc
kt qu i vi Al c th p dng c vo thc nghim.
Cc ht n bia khuch tn trn b mt theo nhiu cch. Do , phn b dy mng l rt quan
trng cn cho m phng v thc nghim. T cc kt qu thu c, c th trch xut hnh thi mng
Al2O3 (hnh 5).

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Science & Technology Development, Vol 10, No.03 - 2007

DISTRIBUTION OF PARTICLE NUMBER PER INITIAL KINETIC ENERGY

S ht trn 100 000 ht m phng

10000

9000

Number of Particle per 100 000

7000

Xc sut

Target: Metalic Al
Ebombardment: 450 eV
Empty Squares

8000

Target: Metalic Ti
Ebombardment: 450 eV
Filled Circles

6000

5000

4000

3000

2000

1000

10

15

20

25

30

35

40

45

Nng lng [eV]

50

Nng lng [eV]

Initial Kinetic Energy (eV)

Hnh 3. Phn b s ht theo nng lng 100000 ht phn x Al v Ti (tri) v kt qu tng t [8] vi mi
trng Ar v nng lng bn ph c 440 eV (phi).
Qu o M Phng ca 500 Ht Al Phn X

Qu o M Phng ca 500 Ht Al3O3 Phn X

TRAJECTORIES OF 500 Al2O3 SPUTTERED PARTICLES

TRAJECTORIES OF 500 Al SPUTTERED PARTICLES

50

45

Target: Al
Pressure:0.5 Pa
Voltage: 500 VDC
Rate: 7.6%

Khong Cch Bia 40 cm

40

T arg et S ub stra te D is ta nc e 4 0m m

Khong
T a rg e t S uCch
b s tra te DBia
is ta n
c e
4 0 m m40 cm

50

35
30
25
20
15
10
5

45

Target:Al2O3
Pressure: 0.5Pa
Voltage: 500 VDC
Rate: 1%

40

35

30

25

20

15

10

0
0

-5
-40

-30

-20

-10

10

Target Diameter

B Mt Bia

20

30

40

-40

-30

-20

-10

10

20

30

40

Target Diameter

B Mt Bia

Hnh 4. M phng qu o ca 500 ht Al (tri) v Al2O3 (phi) trong min khng gian phn x. T l t n bia
i vi Al c 8% v i vi Al2O3 c 1%.

4.KT LUN
Thun li chnh ca m phng bng my tnh i vi qu trnh phn x l hu nh cc tham s u
c th c tin hnh. iu ny lm gim ng k thi gian v chi ph nghin cu.
Mt s kt qu ban u c rt ra nhm thu hp phm vi thc nghim v lm tin cho vic to
mng:
Cc ht phn x c nng lng tp trung vo c 10 20 eV, cc nng lng c bit cao c s
lng rt thp.
p sut thp 0.3Pa, in p phn x 500 VDC t s n c bia i vi cc ht Al c 8% v cc
ht Al2O3 ch c 1% v c s ht tun theo phn b nng lng tng t nh lc ri bia nhng vi gi tr
cc i thp hn, cc kt qu ny ph hp vi [10]. Phm vi p sut thun li l 0.1 0.5 Pa.

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TAP CH PHAT TRIEN KH&CN, TAP 10, SO 03 - 2007

Hnh 5.Hnh thi b mt mng Al2O3 t kt qu m phng lng ng.

Cc kt qu tnh c kh ph hp vi kt qu ca cc tc gi cng b v s phi c hon thin

bi cc quan st thc nghim. Kt hp m phng qu trnh lng ng vi qu trnh phn x v s hnh
thnh mng cho ta mt cng c hu hiu hon thin cng vic nghin cu k thut phn x v s hnh
thnh mng.

MODELING AND SIMULATION OF THE MAGNETRON SPUTTERING PROCESS

FOR AL2O3 THIN FILM COATING
Giang Van Phuc(1) Le Vu Tuan Hung(2), Huynh Thanh Dat(3), Nguyen Van Den(2)
(
1) An Giang University
(2)University of Natural Sciences, VNU-HCM
(3)VNU-HCM
ABSTRACT: Al2O3 used for manufacturing the catalytic converters is applied as a component of
porous ceramal or in the form of films. It could be produced by reactive DC magnetron sputtering from
metallic targets or directly from oxide targets.
The aim of this paper is the simulation to determine the suitable conditions to sputter Al2O3 thin
film from Al with our homemade equipment system. The simulation based on the Monte Carlo method
and the initial parameters including the geometric parameters. The calculation is executed in the Matlab
platform both in the command line and the graphic user interface regim for the illustration.
The results of this work included (a) the initial energetic and angular distributions of sputtered
atoms, (b) the transport process of sputtered particles, (c) the spatial, energetic and angular distribution
of sputtered atoms at the substrate, (d) the sputtered atom deposition including the diffusions. These
results have been compared to those of the other authors and to the results of experimental
investigations for the accomplishment.

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Science & Technology Development, Vol 10, No.03 - 2007

TI LIU THAM KHO

[1]. A.Maksymowicz1,*, K.Malarz1,**, M.Magdon2,***, S.Thompson3 and J.Whiting3, Computer
Simulation of Anisotropic Thin Film Growth
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Thrusters, Doctor of Philosophy in Materials Science Thesis
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thin films, Department of Electron Ion and Vacuum Technology, Electrotechnical University, 5,
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1
2
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to the Simulation of IPVD, Chemnitz University of Technology, Center for Microtechnologies,
Chemnitz, Germany Fraunhofer IZM, Dept. Micro Devices and Equipment, Chemnitz
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Protection of Metals, Institute of Metal Research Chinese Academy of Science, China
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of Antwerp (UIA), Dynamic Monte Carlo simulation for reactive sputtering of aluminium,

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