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EN 202 Electronics

Welcome

EN 202 Electronics

Rajesh Gupta

My Introduction
Prof. Rajesh Gupta
Dept. of Energy Science and Engineering
Office: Room No. 3. Near to Energy Sci and Engg. Office
Phone: 7837
Email: rajeshgupta@iitb.ac.in

EN 202 Electronics

Rajesh Gupta

Your Introduction

Name

Place

Background of electronics and electrical

What you expect from this course

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Rajesh Gupta

Objective of course
To give you a basic background of electronics
engineering, which is required for

Troubleshooting, understanding and making of


electrical/electronics circuits/instruments

Understanding of basic terminology of electronics

For laboratory experiments

Minimum electronics knowledge which help in understanding


system in which electronics is one of the component

EN 202 Electronics

Rajesh Gupta

Digital Electronics

EN 202 Electronics

Rajesh Gupta

References

A.P. Malvino and D.P. Leach, Digital Principles and


Applications, Tata McGraw Hill Edition
W.H. Gothmann, Digital Electronics An Introduction
to Theory and Pratice, Prentice Hall of India Private
Limited.
A. P. Malvino, J. A. Brown, Electronics : An
Introduction to Microcomputers, Tata Mcgraw Hill.

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Logic Gates

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NOT Gate OR Inverter

Logic - Opposite of input

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AND Gate

Logic output is 0 if there is any input 0

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OR Gate

Logic output is 1 if there is any input 1

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NAND Gate
Universal Gate

Logic output is 1 if there is any input 0

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NOR Gate
Universal Gate

Logic output is 0 if there is any input 1


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XOR Gate

Logic output is 1 if there are odd number of 1s in input


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ICs of logic gates

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Problem

Construct NOT, OR and AND function


by NAND Gate

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Problem

Construct NOT, OR and AND function


by NOR Gate

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Problem
Propose an application based on digital
circuit

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Acceptable input & output voltage


TTL Transistor-Transistor Logic

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Binary number system

Why binary number system is required in digital electronics ?


Only two states are possible
Decimal Odometer
000, 001, 002, 003009, 010, 011..099, 100, 101
Binary Odometer
000, 001, 010, 011, 100, 101, 110, 111
Bit = X
Nibble= XXXX
Byte = XXXX XXXX
MSB

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LSB
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Weight of digits

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Weigh of digit in decimal system

Weight of digit in binary

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Problems

A number 7 is required to electrically transmit


from one town to another town. What are
possible ways ?
Convert 10101 to decimal
Convert 55 to binary

Successive division

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Binary addition

Examples

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Binary subtraction
0-0=0
1-0=1
1-1=0
10-1=1

Examples
407
100 (4)
-328 -001 (1)
------ --------079 011 (3)

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1101 (13)
11001000
-1010 (10) -01001011
-------------- -------------0011 (3)
01111101

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Binary Adder

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Half Adder

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Full Adder
A B C
A
B

CARRY

CARRY
FA
SUM

SUM

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Boolean Arithmetic
- Based on logic gate

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OR and AND operation

Y= A+B
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Y= A.B
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NOT, NAND and NOR

NOT
Y=
NAND
Y = AB
NOR
Y =AB
XOR

Y = ??

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Basics of boolean algebra

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Boolean rules for simplification

A+AB=A

A AB A B

Truth tables should match


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Contd.

A+BC=(A+B) (A+C)

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Circuit simplification example

Realize with less number of gates

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DeMorgan's Theorems

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Problem

Solve

Ans

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AB

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Problems
AB A AB 0
AB AC A BC(AB C) 1

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Converting truth tables into Boolean


expressions
Sum of product approach

Ans AB+BC+CA
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Contd.
Product-Of-Sums approach

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Logic simplification with Karnaugh maps

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Contd.

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Contd.

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Larger 4-variable Karnaugh maps

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Contd.

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Contd.

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Contd.

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Sigma Notation

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Pi-Notation

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Don't Care cells in the Karnaugh map

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Problem
f= m (0,1,3,4,5,7,10,13)
f= m (1,2,3,5,6,7,8,12,13)
f= m
(0,2,6,10,11,12,13)+d(3,4,5,14,15)

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FLIP-FLOP

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Sequential logic
Sequential logic, unlike combinational logic is
not only affected by the present inputs, but
also, by the prior history

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R-S Flip-flop or R-S latch

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Gated S-R latch

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D Flip-flop OR D latch

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D Flip-Flop Response

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Edge-triggered Response

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Edge trigger realization

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Edge triggered RS flip-flop

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J-K flip-flop

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Preset and Clear in flip-flop

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Counters

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Asynchronous counters

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Contd.

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Up and Down counter

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Propagation delay in asynchronous counter

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Synchronous counters

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Contd.

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Application of counter

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Problem
Application of counters ?

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Shift Register

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Application

Shift registers produce a discrete delay of a


digital signal or waveform
Very long shift registers served as digital
memory

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Shift Register Types

Serial-in/serial-out

Serial-in/parallel-out

Parallel-in/serial-out

Parallel-in/parallel-out

Ring counter

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Serial-in/serial-out

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Parallel-in/serial-out

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Serial-in/parallel-out

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Parallel-in/Parallel-out

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Ring counter

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Serial-in, Serial-out shift register

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Parallel-in serial out

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Serial-in/parallel out

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Problem

Parallel-in parallel-out circuit ?

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Ring counter

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Digital Storage

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Why digital ?

The basic goal of digital memory is to provide a


means to store binary data: sequences of 1's and 0's

The most evident advantage of digital data storage is


the resistance to corruption

Magnetization method of storage

Digital data storage also complements digital


computation technology

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Rajesh Gupta

Random access and sequential access

Random access means that you can quickly and


precisely address a specific data location within the
device, and non-random (sequential) simply means
that you cannot

Examples

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A vinyl record platter is an example of a


random-access device (CDs also)
Cassette tape is sequential
Rajesh Gupta

Writing and Reading

The process of storing a piece of data to a memory


device is called writing
The process of retrieving data is called reading

ROM (read only memory)- Some devices do not allow


for the writing of new data, and are purchased "prewritten.

Example: vinyl records

Read-write memory Memories allow reading and


writing

Example: Cassette audio and video tape

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Memory with moving parts: "Drives"

Paper tape

Magnetic tape (sequential


access,slow)

Magnetic storage drives

drum type (motor, R/W coil)


Floppy disk (not reliable)
Hard drive

Compact disk (CD)

Binary bits are "burned" into


the aluminum as pits by a highpower laser

Digital Video Disk (DVD)

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Modern nonmechanical memory

A very simple type of electronic memory is


flip-flop

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ROM-Read-only memory

PROMs - Programmable Read-Only


Memory
The simplest type of ROM is that which uses tiny
"fuses" which can be selectively blown or left alone
to represent the two binary states

EPROM - Erasable Programmable ReadOnly Memory

Electrically-erasable (EEPROM)

Ultraviolet-erasable (UV/EPROM)

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Volatile and non-volatile memory

Volatile memory loose its data when power goes off


(e.g, RAM of computer)
Non Volatile memory retain data even without power
(e.g. ROM, magnetic tapes)

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Rajesh Gupta

Memory Address

The location of this data within the storage device is


typically called the address, in a manner reminiscent
of the postal service.

the address in which certain data is stored can be


called up by means of parallel data lines in a
digital circuit
data is addressed in terms of an actual physical
location on the surface of some type of media
(e.g. tracks and sectors of circular computer disks)

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Memory Array
For more storage,
many latches
arranged in a form of
array where we can
selectively address
which one is reading
from or writing to.

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Memory Size

Number of bits
Generally memory size represented in bytes
(1 byte = 8 bits)

Example

1.6 Gigabytes = 12.8 Giga bits

One kilobyte" = 1024 bytes (2 to the power of


10) locations for data bytes (rather than exactly
1000)
"64 kbyte" memory device actually holds 65,536
bytes of data (2 to the 16th power)

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Digital computer
Main components
CPU: central procession unit
Memory
Input output device
Input

Microprocessor OR CPU

Output

Memory
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Microprocessor or CPU

It fatches instruction
from the memory and
performs specified tasks.
It store results in the
memory or sends results
to the output device

Accumulator
ALU
General purpose registers
Timing and Control Unit

It control with memory


and input/output devices

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Sections of CPU

Arithmetic and logic unit - to perform arithmetic operations


such as addition and subtractions, logical operation (AND,OR,
etc.)
Timing and control unit - control entire operation of a
computer. It acts as a brain. It also control all other devices
connected to CPU
General purpose registers - for temporary storage of data and
intermediate results while computer is making execution of
program
Accumulator It is a register which contain one the operands
and store results of most arithmetic and logical operations

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Electrical Theorem and


Components

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Thevenin's Theorem

Thevenin's Theorem is a way to


reduce a network to an equivalent
circuit composed of a single voltage
source, series resistance, and series
load
Useful in analyzing power systems and
other circuits where one particular
resistor in the circuit (called the "load"
resistor) is subject to change, and recalculation of the circuit is necessary
with each trial value of load resistance,
to determine voltage across it and
current through it.

EN 202 Electronics

Rajesh Gupta

Steps to follow for Thevenin's Theorem


1.

Find the Thevenin source voltage


by removing the load resistor from
the original circuit and calculating
voltage across the open
connection points where the load
resistor used to be.
Designate R2 as the "load"
resistor
Determining voltage and current
across R2

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Contd.

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Contd.
2.

Find the Thevenin resistance by


removing all power sources in the
original circuit (voltage sources
shorted and current sources open)
and calculating total resistance
between the open connection
points.

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Rajesh Gupta

Contd.
3.

Draw the Thevenin equivalent


circuit, with the Thevenin
voltage source in series with
the Thevenin resistance. The
load resistor re-attaches
between the two open points
of the equivalent circuit.

4.

Analyze voltage and current for


the load resistor following the
rules for series circuits.

EN 202 Electronics

Rajesh Gupta

Norton's Theorem

Norton's Theorem is a way to


reduce a network to an equivalent
circuit composed of a single current
source, parallel resistance, and
parallel load.
Useful in analyzing power systems and
other circuits where one particular
resistor in the circuit (called the "load"
resistor) is subject to change, and recalculation of the circuit is necessary
with each trial value of load resistance,
to determine voltage across it and
current through it.

EN 202 Electronics

Rajesh Gupta

Steps to follow for Norton's Theorem


1.

Find the Norton source current by


removing the load resistor from the
original circuit and calculating
current through a short (wire)
jumping across the open connection
points where the load resistor used
to be
Designate R2 as the "load" resistor
Determining voltage and current across
R2

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Rajesh Gupta

Contd.

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Contd.
2.

Find the Norton resistance by


removing all power sources in the
original circuit (voltage sources
shorted and current sources open)
and calculating total resistance
between the open connection
points.

EN 202 Electronics

Rajesh Gupta

Contd.
3.

Draw the Norton equivalent


circuit, with the Norton current
source in parallel with the
Norton resistance. The load
resistor re-attaches between
the two open points of the
equivalent circuit.

4.

Analyze voltage and current for


the load resistor following the
rules for parallel circuits.

EN 202 Electronics

Rajesh Gupta

Thevenin-Norton equivalencies

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Rajesh Gupta

Electrical Components

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Capacitor

The ability of a capacitor to store energy in the form of an


electric field is called capacitance. It is measured in the unit of
the Farad (F).

Capacitors used to be commonly known by another term:


condenser.

Capacitors react against changes in voltage.

When a capacitor is faced with an increasing voltage, it acts as


a load: drawing current as it absorbs energy.

When a capacitor is faced with a decreasing voltage, it acts as a


source: supplying current as it releases stored energy.

EN 202 Electronics

Rajesh Gupta

Capacitors and calculus

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Contd.

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Contd.

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Factors affecting capacitance

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PLATE AREA
PLATE SPACING
DIELECTRIC
MATERIAL

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Series and parallel capacitors

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Practical considerations

Working voltage
Polarity
Equivalent circuit
Physical Size

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Inductors

The ability of an inductor to store energy in the form of a


magnetic field is called inductance. It is measured in the unit of
the Henry (H).
Inductors used to be commonly known by another term: choke.
In large power applications, they are sometimes referred to as
reactors.
Inductors react against changes in current by dropping voltage
in the polarity necessary to oppose the change.
When an inductor is faced with an increasing current, it acts as
a load
When an inductor is faced with a decreasing current, it acts as a
source

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Rajesh Gupta

Inductors and calculus

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Contd.

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Contd.

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Factors affecting inductance

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TURNS IN THE COIL


COIL AREA
COIL LENGTH
CORE MATERIAL

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Series and parallel inductors

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Practical considerations

Rated current
Equivalent circuit
Inductor size
Interference

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Analog Electronics

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References

A.P. Malvino, Eletronic Principles, Tata McGrawHill Publishing Company Limited, New Delhi
N.N. Bhargava, D.C. Kulshreshtha, S.C. Gupta,
Basic Electronics and Linear Circuits, Tata
McGraw-Hill Publishing Company Limited, New Delhi

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Diodes

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n-type semiconductor
+4

+4

Fifth
electron

+4

P
+4

+5

+4

+4

+4

+4

Legends :
Free electron (Negative Charge)
Hole (Positive Charge)
Immobile ion (Positive Charge)

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p-type semiconductor
Incomplete bond
+4

+4

+4

+4

+4

+4

Hole
+4

+3

+4

+4

+3

+4

+4

+4

+4

+4

+4

+4

Legends :
Hole (Positive Charge)
Electron (Negative Charge)
Immobile ion (Negative Charge)

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p-n junction
P - type

N - type

P - type

Electric field

N - type

Depletion region

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p-n junction forward biased


P - type

N - type

Depletion
region

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p-n junction reverse biased


P - type

N - type

Depletion region

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Introduction
Diode operation

Flow permitted

Current prohibited
Diode is reverse-biased

Hydraulic check valve

Current permitted
Diode is forward-biased
Anode

Cathode
Schematic symbol
Real component appearance

Flow permitted

Stripe marks cathode

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Contd.
I D I S (e
ID
IS
e
q
V
N
k
T

qV
NkT

1)

ID

diode current
forward

saturation current
Eulers Constant(2.71828.)
19

Charge of electron(1.6 10 As)


Voltage across the diode
Non-ideality coefficient(typ.between 1 and 2)
Boltzmanns constant (1.38) 1023 )
Junction temperature in kelvin

forward-bias

reverse-bias
0.7

VD

V
reverse
Breakdown!

I D I S (eVD / 0.026 1)
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Example
0.7 V

+ -

5.3 V

Forward-biased +
6V
-

6.0 V

0.0 V

Reverse-biased 6V
+

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Rajesh Gupta

Summary

A diode is an electrical component acting as a one-way valve for


current.
When voltage is applied across a diode in such a way that the diode
allows current, the diode is said to be forward-biased.
When voltage is applied across a diode in such a way that the diode
prohibits current, the diode is said to be reverse-biased.
The voltage dropped across a conducting, forward-biased diode is
called the forward voltage. Forward voltage for a diode varies only
slightly for changes in forward current and temperature, and is fixed
principally by the chemical composition of the P-N junction.
Silicon diodes have a forward voltage of approximately 0.7 volts.
Germanium diodes have a forward voltage of approximately 0.3 volts.
The maximum reverse-bias voltage that a diode can withstand without
"breaking down" is called the Peak Inverse Voltage, or PIV rating.

EN 202 Electronics

Rajesh Gupta

Meter check of a diode

Diode is forward-biased by
ohmmeter shows 0 ohms of
resistance.

Connected one way


across the diode, the
meter should show a
very low resistance.

Anode

Cathode

V
A

COM

Connected the other


way across the diode,
it should show a very
high resistance ("OL"
on some digital meter
models)

Diode is reverse-biased by
ohmmeter shows infinite
resistance.

Cathode

Anode

V
A

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COM

Rajesh Gupta

Problem

Find out Application of Diodes

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Rectifier Circuits
Rectification is the conversion of alternating current
(AC) to direct current (DC).

A half-wave rectifier is a circuit that allows only one half-cycle of


the AC voltage waveform to be applied to the load, resulting in
one non-alternating polarity across it. The resulting DC
delivered to the load "pulsates" significantly.
A full-wave rectifier is a circuit that converts both half-cycles of
the AC voltage waveform to an unbroken series of voltage
pulses of the same polarity. The resulting DC delivered to the
load doesn't "pulsate" as much.

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Half-wave Rectifier
Half-wave rectifier circuit
Bright

AC Voltage
source

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Dim

A
AC Voltage source

Load

Rajesh Gupta

Full-wave Rectifier
V

A
V

Full-wave rectifier circuit (center-tap design)

A
V

AC Voltage
source

+
Load
-

A
V

~
+

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Rajesh Gupta

Full wave bridge rectifier


V

+
~
-

Full-wave rectifier circuit (bridge design)

+
-

A
V
AC
Voltage
source

~
+
Load

~
+

+
-

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Rajesh Gupta

Diode ratings
In addition to forward voltage drop (Vf) and peak inverse
voltage (PIV), there are many other ratings of diodes

Maximum DC reverse voltage = VR or VDC The maximum


amount of voltage the diode can withstand in reverse-bias mode
on a continual basis. Ideally, this figure would be infinite.

Maximum reverse current = IR the amount of current


through the diode in reverse-bias operation, with the maximum
rated inverse voltage applied (VDC). Sometimes referred to as
leakage current. Ideally, this figure would be zero, as a perfect
diode would block all current when reverse-biased. In reality, it
is very small compared to the maximum forward current.

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Contd.

Maximum (average) forward current = IF(AV) The maximum


average amount of current the diode is able to conduct in forward bias
mode. This is fundamentally a thermal limitation: how much heat
can the PN junction handle, given that dissipation power is equal to
current (I) multiplied by voltage (V or E) and forward voltage is
dependent upon both current and junction temperature. Ideally, this
figure would be infinite.
Maximum (peak or surge) forward current = IFSM or if(surge) The
maximum peak amount of current the diode is able to conduct in
forward bias mode. Again, this rating is limited by the diode
junction's thermal capacity, and is usually much higher than the
average current rating due to thermal inertia (the fact that it takes a
finite amount of time for the diode to reach maximum temperature for
a given current). Ideally, this figure would be infinite.

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Contd.

Maximum total dissipation = PD The amount of power (in watts)


allowable for the diode to dissipate, given the dissipation (P=IE) of
diode current multiplied by diode voltage drop, and also the dissipation
(P=I2R) of diode current squared multiplied by bulk resistance.
Fundamentally limited by the diode's thermal capacity (ability
to tolerate high temperatures).
Operating junction temperature = TJ The maximum allowable
temperature for the diode's PN junction, usually given in degrees
Celsius (oC). Heat is the "Achilles' heel" of semiconductor devices: they
must be kept cool to function properly and give long service life.

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Contd.

Typical junction capacitance = CJ the typical amount of


capacitance intrinsic to the junction, due to the depletion region acting
as a dielectric separating the anode and cathode connections. This is
usually a very small figure, measured in the range of picofarads (pF).
Reverse recovery time = trr the amount of time it takes for a diode
to "turn off" when the voltage across it alternates from forward-bias to
reverse-bias polarity. Ideally, this figure would be zero

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Rajesh Gupta

Power Supply

Transformer

Rectifier

Filter

Regulator
Regulated dc output

AC mains

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Rajesh Gupta

Need of Filter

Full-wave rectifier output is not smooth, it has lot of


ripples
In order to minimize these ripples, a filter is required
to smooth the out of full wave rectifier.

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Rajesh Gupta

Shunt Capacitor Filter

Shunt capacitor is simplest


and cheapest type filter
Connect a large value of
capacitor across load
Block DC, allow AC to follow
Rate of discharge depend
on RLC
Large C give less ripples
Upper limit of C depends on
current handling rating of
diodes

EN 202 Electronics

Filter
Power
mains

Full-wave
rectifier

Vm

A
0

R L o

V dc
2

Vm

A
0

Load

E
F
2

V dc
3

Rajesh Gupta

Conduction angle of diode


o

Vm

A
0

V dc
2

Vm

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E
F
2

V dc
3

Rajesh Gupta

Ripple voltage
Q
V
C

Q
V1 1
C

V1 V2
Q1 Q 2

T1 T2 C (T1 T2 )

Vrip

I
fC

V2

Q2
C

V1 V2

V1 V2 Q1 Q2

T
CT

Q1 Q 2
C

V1 V2 I

T
C

Vrip peak-to-peak ripple voltage

dc load current

ripple frequency

C capacitance

Vdc V2 ( peak )
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Vrip
2
Rajesh Gupta

Problem
Load current = 10 mA
Capacitance= 470 F
Line frequency = 50 Hz

Find ripple voltage of full wave rectifier and half wave


rectifier

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Rajesh Gupta

Need of Regulator

Output of filter also have some ripples, to make it


more smooth, regulator is required.
Zener diode is one of the simplest type of regulator

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Rajesh Gupta

Zener diodes
0.7 V
7.0 V

50 V

150 V

100 V

Diode Vbreakdown

Zener diode
Anode

100 V
Cathode

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Rajesh Gupta

Contd.
32.4 V

12.6 V

1 K

Presistor (32.4mA)(32.4V )

32.4 mA

Presistor 1.0498W

45 V

12.6 V

Pdiode (32.4mA)(12.6V)
Diode

V zener 12 .6V

Pdiode 408.24mW
32.4 mA

A zener diode with a power rating of 0.5 watt would be adequate,


as would a resistor rated for 1.5 or 2 watts of dissipation.

EN 202 Electronics

Rajesh Gupta

Contd.
32.4 V

Presistor (324 A)(32.4V )

100 K

Presistor 10.498mW

324 A
12.6 V

45 V

Pdiode (324 A)(12.6V )


Pdiode 4.0824mW

324 A

EN 202 Electronics

Rajesh Gupta

Contd.
44.776 V

32.4 V
1 K
45 V

100 K

32.4 mA
12.6 V

Rload

45 V

447.76 A

0A

224 mV

Rload
500

500

7.2 mA
32.4 mA

447.76 A

25.2 mA

447.76 A

25.2 mA

447.76 A

44.776 V
100 K

447.76 A

447.76 A
224 mV

45 V

500
447.76 A

EN 202 Electronics

Rload

447.76 A

Rajesh Gupta

Schottky diodes

Schottky diodes are constructed of a metal-to-N junction rather than


a P-N semiconductor junction.
Schottky diodes are characterized by fast switching times (low reverserecovery time), low forward voltage drop (typically 0.25 to 0.4 volts for a
metal-silicon junction), and low junction capacitance. This makes them
well suited for high-frequency applications.
In terms of forward voltage drop (VF), reverse-recovery time (trr), and
junction capacitance (CJ), Schottky diodes are closer to ideal than the
average "rectifying" diode. Unfortunately, though, Schottky diodes
typically have lower forward current (IF) and reverse voltage
(VRRM and VDC) ratings than rectifying diodes and are thus unsuitable
for applications involving substantial amounts of power.

EN 202 Electronics

Rajesh Gupta

Tunnel diodes

Tunnel diodes exploit a strange


quantum phenomenon called resonant
tunneling to provide interesting forwardbias characteristics having peak
current (IP) Valley current (IV).
Able to transition between peak and
valley current levels very quickly,
"switching" between high and low states
of conduction much faster than even
Schottky diodes.

Tunnel diode
Anode

Forward
current

IP
IV

VP VV
Cathode
Forward voltage

Tunnel diode characteristics are also


relatively unaffected by changes in
temperature.

EN 202 Electronics

Rajesh Gupta

Light-emitting diodes

Some semiconductor junctions, composed of


special chemical combinations, emit
radiant energy within the spectrum of visible
light as the electrons transition in energy
levels.
Simply put, these junctions glow when
forward biased. A diode intentionally
designed to glow like a lamp is called a lightemitting diode, or LED.
Diodes made from a combination of the
elements gallium, arsenic, and phosphorus
(called gallium-arsenide-phosphide) glow bright
red, and are some of the most common LEDs
manufactured

EN 202 Electronics

Light-emitting diode (LED)

Anode

Cathode

Rajesh Gupta

Varactor Diode

It is operated reverse-biased
so no current flows through it,
but since the width of the
depletion region varies with
the applied bias voltage, the
capacitance of the diode can be
made to vary.

or

Cmax

Symbol

Cmin

Varactors are commonly used in


voltage-controlled oscillators

EN 202 Electronics

Reverse voltage

Rajesh Gupta

Limiter
Limiter removes signal voltage above and
below a specified level

Useful for signal shaping, circuit protection etc.


Use of small signal diode at high frequency.

EN 202 Electronics

Rajesh Gupta

Positive Limiter
R

VP
0

VP

EN 202 Electronics

RL

VP

Rajesh Gupta

Biased limiter
R
V+0.7

VP

VP

EN 202 Electronics

+
-

RL

VP

Rajesh Gupta

Combination limiter
R

D1

VP
0

VP

EN 202 Electronics

V1

D2
+
-

V2

V1 0.7
RL

V2 0.7

Rajesh Gupta

Circuit protection limiter

Vin

Vout

Vin

Vout
1N914
+5 V

EN 202 Electronics

Rajesh Gupta

Transistors

EN 202 Electronics

Rajesh Gupta

Introduction

The invention of the bipolar


transistor in 1948 ushered in a
revolution in electronics.
Bipolar transistors consist of
either a P-N-P or an N-P-N
semiconductor "sandwich"
structure.
The three leads of a bipolar
transistor are called the Emitter,
Base, and Collector.
Difference between PNP and
NPN transistor is the proper
biasing of junctions. Current
directions and voltage polarities
for each type of transistor are
exactly opposite
EN 202 Electronics

Base
Emitter

Collector
P

B
Base
Emitter

Collector
N

Rajesh Gupta

Transistor Mode of Operation


Condition

Emitter junction

Collector junction

Region of
operation

FR

Forward-biased

Reverse-biased

Active

FF

Forward-biased

Forward-biased

Saturation

RR

Reverse-biased

Reverse-biased

Cutoff

RF

Reverse-biased

Forward-biased

Inverted

Biasing an NPN transistor for active operation


N

Base

Collector

C
Emitter
Space
charge
-

V EE S 1

EN 202 Electronics

Space
charge

S2

V CC

Rajesh Gupta

Only emitter junction forward biased


N

IE
Reduced
barrier

B
IB

EE

Larger current flow


~ 99 % of total current carried by electrons (moving from
emitter to base)
Emitter current and base current very large (IE=IB), IC=0

EN 202 Electronics

Rajesh Gupta

Only collector junction reverse biased


N

Electron

C
Hole

IC

B
IB

VCC

Very small current flow (minority carrier current temperature


dependent current) called collector leakage current ICBO
ICBO signifies current between collector and base when third
terminal (emitter) is open

EN 202 Electronics

Rajesh Gupta

Surprising action of transistor


If emitter junction forward biased and collector
junction reverse biased
Expectation

Both emitter and base current to be large and collector


current very small

Reality

EN 202 Electronics

Emitter current is large as expected, but base current


turns out to be very small and collector current turns out
to be large

Rajesh Gupta

Working of transistor
N
E

P
1
2
3
4

B
5

IE

B
IC

IB
-

V EE

V CC

Ratio of no. of electrons arriving at collector to no. of emitted electrons is


know as base transportation factor (typically ~ 0.99)

No. of electrons (like 3) and holes (like 7) crossing the E-B junction is much
more than the no. of electrons (like 5) and holes (like 8) crossing the C-B
junction. The difference of these two currents is base current.

EN 202 Electronics

Rajesh Gupta

Contd.

Collector current is less than emitter current


A part or emitter current consists of holes that do not contribute to
collector current

Not all the electrons injected into the base are successful in
reaching collector.
Ratio of collector current to emitter current is typically 0.99 denoted
by dc

Collector current made up of two parts

Fraction of emitter current which reaches the collector


Reverse leakage current ICO

I C dc I E I CO

Total current equation

I E IC I B
EN 202 Electronics

Rajesh Gupta

Problem

An NPN transistor has of dc 0.98 and a collector


leakage current of 1 uA. Calculate the collector and
base current, when emitter current is 1 mA.

EN 202 Electronics

Rajesh Gupta

Transistor amplifying action


iE

s ~

EB

CB

VEE
Rin 40

VCC
Ro 500 k

I c I e 0 .5 mA

Transfer + resistor = transistor


EN 202 Electronics

RL 5 k

- B -

20 10 3
Ie
0 .5 mA
40

iC

VO I c RL
(0.5 103 ) (5 103 ) 2.5V
VO
VS
2 .5

125
3
20 10
A

Rajesh Gupta

Different configurations of transistor


E

C
B

~
-

RL O
-

RL O

s ~

RL O

~
-

Figure shows three configuration from ac point of view.


In all configurations, emitter-base junction is always forwardbiased and collector base junction is always reverse-biased.

EN 202 Electronics

Rajesh Gupta

Transistor characteristics
Static characteristic curves to relate current
and voltage in a transistor.

Input characteristic
Output characteristic

EN 202 Electronics

Rajesh Gupta

Common-Base Input characteristics


iE
RS

VEE

+ mA
+

R1

iC
C

- E

EB

CB

ri

EN 202 Electronics

mA

V
+

R2

V CC

EB
iE VCB Const .

Rajesh Gupta

Common-Base output characteristics


ro

CB
iC

hfb or

I E Const.

iC
iE VCB Const.

High output resistance can be good current source


Saturation region - collector current not remain same with change in
emitter current
Cut-off region- collector current is not zero even emitter current is zero
due to leakage current ICB0 OR ICO

EN 202 Electronics

Rajesh Gupta

Summary of C-B characteristics

Current gain slightly less then unity (~0.98)


Dynamic input resistance very low (~ 20 ohm)
Dynamic output resistance very high (~ 1 M ohm)
Leakage current very low (~ 0.02 uA for Si transistor)

EN 202 Electronics

Rajesh Gupta

C-E Configuration
I C dc ( I C I B ) I CBO
IB

VBB

+
-

(1 dc ) I C dc I B I CBO

C
B

IC

N
P
N

V CC

+
-

V CC

VBB -

IE

IC

1
dc
IB
I CBO
1 dc
1 dc

dc

dc
1 dc

I CEO

Mostly work in active region


EN 202 Electronics

I CBO
1 dc

I C dc I B I CEO

Rajesh Gupta

Contd.
dc
dc
1 dc

dc dcdc dc
dc dc (1 dc )

dc dc
dc 1

IE IC IB
iE iC iB
iE
i
1 B
iC
iC
1
1
1

EN 202 Electronics

Rajesh Gupta

C-E input characteristics


IC
IB

mA

VBB

R1 V

VCE

VBE

VCC

- A + B
-

R2

ri

BE
i B

EN 202 Electronics

VCE Const.

Rajesh Gupta

C-E output characteristics

Current gain increase with Vce


Small base current produce large change in collector current
Large leakage current ICEO

EN 202 Electronics

Rajesh Gupta

Comparison between CB and CE


Parameters

Common base Common


Configuration
emitter
Configuration

1.

Input dynamic resistance Very low (20 )

Low (1 k)

2.

Output dynamic
resistance

Very high (1 M)

High (10 k)

Less than unity (0.98)

High (100)

Very small (5 A for Ge, 1 A


for Si)

Very large (500 A for Ge, 20


A for Si)

3.
4.

Current gain
Leakage current

Leakage current lead to Thermal Runway

EN 202 Electronics

Rajesh Gupta

Problems

When emitter current of transistor changed by 1mA,


its collector current changed by 0.995 mA. Calculate
CB current gain
CE current gain
The DC current gain of a transistor in CE
configuration is 100. Find DC current gain in CB
configuration.

EN 202 Electronics

Rajesh Gupta

Why CE configuration widely used


A1

RS

Amplifier
stage 2

Amplifier
stage 1

RL

B1

A3

A2

B2

B3

A good amplifier stage is one which has high input resistance and low
output resistance
Current gain is more in CE configuration

EN 202 Electronics

Rajesh Gupta

Common-collector configuration
C
E

S ~

VCC

RL

VBB

RL

Emitter current as a function of base current

I E I B IC
I C dc I E I CBO
EN 202 Electronics

Rajesh Gupta

Contd.
I E I B dc I E I CBO
(1 dc ) I E I B I CBO
IE

1
1
IB
I CBO
1 dc
1 dc

1
dc 1
1 dc

I E ( dc 1) I B ( dc 1) I CBO
I E ( dc 1) I B
IE
( dc 1)
IB
EN 202 Electronics

Rajesh Gupta

CC characteristics
-

High input resistance (~ 150 k ohm)


Low output resistance (~ 800 ohm)
High current gain (~100)
Low voltage gain (less then unity)

EN 202 Electronics

Rajesh Gupta

Transistor data sheet


Important parameters
Maximum power dissipation
Maximum allowable voltage
Current gain
Max frequency of operation

EN 202 Electronics

Rajesh Gupta

Basic CE amplifier circuit


CC 2
+

CC1

RC
+

RB
V BB

V CC

EN 202 Electronics

Rajesh Gupta

DC load line
-

IC

RC I C RC

RB

VBE

VCE

VCC

VBB

VCC I C RC VCE
1
V
VCE CC
I C
RC
RC

(i )VCE VCC ;
(ii )VCE 0;

IC 0
IC

VCC
RC

y mx c
EN 202 Electronics

Rajesh Gupta

Amplification and Q-point


iC
(7.3 4.8)103
(i) Current gain, Ai

125
iB
(60 40) 106

(ii) Votage gain, A

(iii) Power gain,

CE
7.1 4.9

110
BE
20 103

Output ac power I cVce

input ac power
I bVbe

= Ai A 125110 13750

EN 202 Electronics

Rajesh Gupta

Selection of Q-point

EN 202 Electronics

Rajesh Gupta

Logic Gate Using Transistor

EN 202 Electronics

Rajesh Gupta

Current regulator

Transistors function as current


regulators by allowing a small current to
control a larger current. The amount of
current allowed between collector and
emitter is primarily determined by the
amount of current moving between base
and emitter.
In order for a transistor to properly
function as a current regulator, the
controlling (base) current and the
controlled (collector) currents must be
going in the proper directions: meshing
additively at the emitter and going
against the emitter arrow symbol.

EN 202 Electronics

= Small, Controlling Current


= large, Controlled Current

Rajesh Gupta

Transistor as a switch

Transistor's collector current is


proportionally limited by its base
current, it can be used as a sort of
current-controlled switch. A
relatively small flow of electrons
sent through the base of the
transistor has the ability to exert
control over a much larger flow of
electrons through the collector
When a transistor has zero current
through it, it is said to be in a state
of cutoff
When a transistor has maximum
current through it, it is said to be
in a state of saturation.

EN 202 Electronics

Switch

NPN
transistor

PNP
transistor

Switch

Rajesh Gupta

Inverter
V CC

IC
V CC
RC

Closed switch

RC

Open switch

Vout
Vin

RB

V CE
V CC

V CC

V CC

V VBE
I B in
RB

I C dc I B
RC

RC

Vout VCC I C RC

V out

V out
C
E

C
E

0 input = open switch = output 1


1 input = close circuit = output 0
EN 202 Electronics

Rajesh Gupta

NOR Gate
VCC

C
A

EN 202 Electronics

Rajesh Gupta

OR Gate
VCC

C
A

Q1

Q2

Q3

EN 202 Electronics

Rajesh Gupta

AND Gate
VCC

EN 202 Electronics

Q1

Q2

Q3

Rajesh Gupta

NAND Gate

EN 202 Electronics

Rajesh Gupta

XOR Gate

EN 202 Electronics

Rajesh Gupta

Transistor Biasing Circuit

EN 202 Electronics

Rajesh Gupta

Stabilization of Q-point
Requirement of biasing circuit

Operating point in the centre of active region


Stabilization of collector current against temperature variations
Making operating point independent of transistor parameters

Different biasing techniques used for achieving these points


I CBO
Temperature
continues to
increase

I CEO

IC
EN 202 Electronics

Rajesh Gupta

Fixed Bias
VBB

VCC

V CC

RC

VCC
RB

RB

RC

RC

RB

VBB

V VBE
I B BB
RB

VCC I C RC VCE
IC

VCC
RC

I C I B I CEO

I C ( Sat )
EN 202 Electronics

VCC
RC
Rajesh Gupta

Steps for calculating Q-point in fixed bias


1.

2.

3.

Calculate base voltage, in case VBE is known, use


more accurate calculation.
Calculate collector current from base current, make
sure its not greater than Ic(sat)
Calculate collector-emitter voltage

EN 202 Electronics

Rajesh Gupta

Problem

Calculate the Q-point for the circuit given in figure


V CC 9V

300 k

RB RC

2 k

50

EN 202 Electronics

Rajesh Gupta

Problem

Calculate

Q-point in circuit. Given RC=1 k ohm and RB=100 k ohm


If transistor is replaced by another unit of beta=150 instead
of 60. Determine its new Q-point.
V CC 10V

RB

RC
60
AC125

EN 202 Electronics

Rajesh Gupta

Assignment (1 Mark)
In a given circuit, a supply of 6 V and a
load resistance of 1 k ohm is used.
Find the value of resistance RB so that
a germanium transistor with =20 and
ICBO=2uA draws an IC of 1 mA.
What Ic is drawn if the transistor
parameters change to =25 and ICBO =
10 uA due to rise in temperature ?

EN 202 Electronics

6V

RB

1 k

Rajesh Gupta

Fixed bias features


Advantages

Very simple
very few component
Easy to fix Q point by changing RB

Leads to thermal
runway

I CBO

Limitations

Thermal runway
Strongly dependent Q-point

I CBO
T

I CEO

I CEO

IC
IC

EN 202 Electronics

Rajesh Gupta

Collector to base bias circuit


VCC RC ( I C I B ) I B RB VBE

VCC

VCC RC I C ( RC RB ) I B VBE
IB

(VCC I C RC ) VBE
RC RB

RC

V VBE
I B CE
RC RB

RB

I CEO

IB

I CBO
IC
T

(IC I B )

IC

IB

VCE

VBE

IC

VCE
Rising tendency is checked

EN 202 Electronics

Rajesh Gupta

Contd.
VCC RC I B ( RC RB ) I B VBE
VCC VBE [ RB ( 1) RC ]I B
IB ~ Vcc/(RB+Rc)

VCC ( I B I C ) RC VCE 0
VCE VCC ( I C I B ) RC VCC I C RC
Shift in Q-point due to change in is not much as
it occurs in case of fixed bias

EN 202 Electronics

Rajesh Gupta

Features of collector to base bias circuit


Advantages
Check thermal runway
Q-point less dependent on value
Limitations
Base resistance also provide AC feedback, that
reduce voltage gain

EN 202 Electronics

Rajesh Gupta

Problem
Calculate the minimum and maximum collector
current in the given circuit, if varied with in the
limit indicated.
20 V

RC

2 k

200 k

RB
50<<200

EN 202 Electronics

Rajesh Gupta

Bias circuit with emitter resistance


VCC

VCC RB I BVBE I E RE

RB

RC

IC

IB

(VCC I E RE VBE )
RB

IB

(VCC I E RE )
RB

VBE
IE

RE

Rising tendency is
checked

I CBO

IB

ICEO

IC
IC

Rising tendency is
checked

EN 202 Electronics

IE

IC

IC

I E RE

I E RE

IE

IB

Rajesh Gupta

Contd.
VCC I B RB VBE ( 1 )I B RE
IB

VCC VBE
VCC

RB ( 1) RE RB RE

VCC
VCC
IC I B

RB RE RE ( RB / )

VCC I C RC VCE I E RE
VCE VCC ( RC RE ) I C

EN 202 Electronics

Rajesh Gupta

Features of bias circuit with emitter resistance


Advantages

Provide good stabilization of Q-point


against temperature and variation
Limitations

Emitter resistance provide a feedback


causes reduction in voltage gain.

For getting very good stabilization

RE

R
>> B

For large RE, high DC source is required


For small RB, low DC source is required

EN 202 Electronics

10 v

1 M

RB RC

2 k

100

1 k

RE

+ +

--

CE

Problem: Calculate values


of 3 currents

Rajesh Gupta

Voltage divider biasing circuit


A

R1

VCC

R1

Source
shortage

RTH

IB
RE

VTH

RC

R1 R2
R1 R2
RTH

R2
VCC
R1 R2

R1

R2

R2

V CC

RC

R2

VTH I B RTH VBE RE I E

VBE
IE
B

VTH I B RTH VBE ( 1) I B RE


RE

I B [ RTH ( 1 )RE ] VTH VBE


IB

VTH VBE
VTH

RTH ( 1) RE RTH RE

VCE VCC ( RC RE ) I C
EN 202 Electronics

Rajesh Gupta

Problem

Find Q point
+12 v

40 k

5 k

60

5 k

EN 202 Electronics

1 k

- -

CE

Rajesh Gupta

Amplifiers

EN 202 Electronics

Rajesh Gupta

DC Behavior
VCC

R1

VCC I C RC VCE I E RE
VCE I C ( RC RE )

Rc
IC

R2

EN 202 Electronics

RE

1
VCC
VCE
( RC RE )
( RC RE )

Rajesh Gupta

Input and Output phase

EN 202 Electronics

Rajesh Gupta

AC Behavior
VCC
+

RC

R1

CC
+

CC

i ~
-

R2

RC RO

RO

RE

i ~ R1
O

R2

+ +

CE

- -

AC equivalent

EN 202 Electronics

Rajesh Gupta

Transistor Equivalent Circuit

Input

ib
B

ri

Output
E

ib

ro
E

EN 202 Electronics

Rajesh Gupta

Contd.

ic

ib

ri

ib

ro

C
-

EN 202 Electronics

Rajesh Gupta

h-Parameter

Manufacture specify characteristics of a transistor in


terms of h (hybrid) parameters
Hybrid is used with these parameters because they
are a mixture of constants having different units
It becomes popular because they can be measure
easily

EN 202 Electronics

Rajesh Gupta

Transistor as two-port network


i2

i1
1

+
-

1
i1 2 0
i
h21 2
i1 2 0

h12 1
2 i1 0

h11

1 h11i1 h122
i2 h21i1 h222

h22
EN 202 Electronics

2+
-

= Input impedance (with output shorted) = i


= Forward Current ratio (with output shorted) = h f

= Reverse voltage ratio (with input open) =

hr

i2
= Output admittance (with input open) = ho
2 i1 0
Rajesh Gupta

Hybrid equivalent circuit

h fe ib

hre C

hoe

O
-

~
-

ib

ic

hie

hie ri , dynamic input resistance


h fe ,

current amplification factor

1 / hoe ro ,

dynamic output resistance.

EN 202 Electronics

hie 1 k
hre 2.5 104

h fe 50

hoe 25 s (or, 1/ hoe 40 k)


Rajesh Gupta

Amplifier analysis
hie

ib

i ~ R1

ic

hre C ~ h feib

R2

hoe

Rc

RO O
-

EN 202 Electronics

h fe i
E

R ac

O
-

hie

ib

Rac RC || RO

RC RO
RC R O

Rajesh Gupta

Contd.
Current gain , Ai

Output Current
i
c
Input Current
ib

h fe ib
ib

h fe

Ai
Voltage gain , A

A p Ai A

Z in R1 || R 2 || hie hie
h fe ib Rac
Output Voltage

Input Voltage
ib hie

Z o (1 / hoe ) || Rac Rac

h fe R ac
hie

Rac
180 0
ri

EN 202 Electronics

Rajesh Gupta

Problem
15 V

Current Gain 150, Rin=2 k


ohm
Calculate voltage gain and
input impedance

4.7 K

75 K

15 F

15 F

12 K

S ~
-

EN 202 Electronics

7.5 K

1.2 K

100 F

Rajesh Gupta

Multi-stage Amplifiers
s in

A1

n 1

An

n o

o 1 2
n1 o

s s 1
n 2 n1

A1 A2 An1 An

Numbers of bels =
EN 202 Electronics

A2

P2
Log10
P1
Rajesh Gupta

Contd.
Number of dB = 10 Number of bels = 10 log10
Gain in dB = 20 log10

P2
P1

V2
V1

AdB AdB1 AdB2 ... AdBn

EN 202 Electronics

Rajesh Gupta

Why dB

Simple addition of gain

Permits us to denote very small and very large value

Our hearing power in logarithmic

EN 202 Electronics

Rajesh Gupta

Coupling of two stages

Minimum loss of signal


Should not affect biasing of other stage

Typical Couplings

RC coupling
Transformer coupling
Direct coupling

EN 202 Electronics

Rajesh Gupta

RC coupling

Widely used
Makes DC biasing
independent
Not good for low
frequency applications

VCC

Rc

R1

R1

Rc

CC

CC
+
+

EN 202 Electronics

R2

+ +

RE

CE

- -

RL

R2 RE

+ +
- -

CE
-

Rajesh Gupta

Transformer coupling

DC isolation provided by
transformer
Bigger in size
Does not amplify signals of
different frequency equally
Suited for power amplifiers
and tuned voltage amplifiers

VCC

R1

R1

O
S

R2

EN 202 Electronics

CS

RE

+
-

CE

R2

CS

++

RE - - CE

Rajesh Gupta

Direct coupling

Required at very low frequency


Affect biasing of other stage (consider this
while designing)

EN 202 Electronics

Rajesh Gupta

Frequency response of Amplifier

EN 202 Electronics

Rajesh Gupta

At low f

Provide low gain due to high reactance of


coupling capacitors

EN 202 Electronics

Rajesh Gupta

At high f
VCC

R1

Rc

C bc

CC

s ~
-

EN 202 Electronics

R2

Rc

C bc

CC

C ce

Cw1

C ce

Cw2

C be

CC

R1

RE

++
C
- - E

Cw1 C be

R2

RE

+ +
- - CE

Cw2

o
RL
-

Rajesh Gupta

Contd.

EN 202 Electronics

Rajesh Gupta

Bandwidth

0 . 707 A m 1 /
EN 202 Electronics

2 A m
Rajesh Gupta

Effect on band width with no. of stages

Bandwidth decreases with increase in no. of


stages
Because greater no. of capacitor in the circuit
Voltage gain

A ( Am )

Upper and lower cut of frequency


1

f 1
(2

f 2
EN 202 Electronics

1/ n

f1
1)

( 21 / n 1) f2
Rajesh Gupta

Two-stage RC-coupled amplifier


VCC
RC 1

R1

CC

RC 2

R1

CC

CC
+

+
R2

RC 1

S
-

RE

R1

EN 202 Electronics

R2

++
- -C E

R1

R2

R2

RE

RL

++
- -C E

O
-

RC 2

RL

Rajesh Gupta

Contd.
ib 1
S

B1

C1

B2

C2

ib 2

+
RC 1

h ie

h ie

hie i b 1

h ie i b 2

R ac

R B R1 || R 2

A2

R1 R 2
R1 R 2

h fe R ac 2

EN 202 Electronics

hie

Am A1 A2

hie

Rac 2 RC 2 || R L

A1

h fe R ac 1

RC 2 R L
RC 2 R L

A1 is always less than A2, because


of lower Rac1 due to loading effect
Rajesh Gupta

Problem
V CC 20 V

Calculate

input impedance

output impedance
56 k

voltage gain
5F
both transistor
hfe = 120
+
hie =1.1k ohm
S ~ 5.6
-

EN 202 Electronics

6.8 k

3.3 k

56 k

5F

0.5
k

5.6
+ + k
- 500
F

5F

+
2.2
k

0.5
k

++
- 500
F

O
-

Rajesh Gupta

Distortion in Amplifiers
When wave shape of the output is not an exact replica of
input wave
Caused by

Reactive component and non-linear characteristic of transistor

Frequency distortion

Caused by electrode capacitance and other reactive components

EN 202 Electronics

Rajesh Gupta

Contd.

Phase distortion

Delay introduce by the amplifier is different for various


frequency
Reactive components of the circuit are responsible for this
distortion

Harmonic distortion

Output contain new frequency components that are not


present in the input. New frequency are harmonics of
present in input
Happen due to non-linearity in the dynamic transfer
characteristic curves

EN 202 Electronics

Rajesh Gupta

Contd.
i

AMPLIFIER

Input

f1 f 2

EN 202 Electronics

Output

f1 f 2

2 f1 2 f 2

3 f1 3 f 2

Rajesh Gupta

Operational-Amplifiers

EN 202 Electronics

Rajesh Gupta

Introduction

The operational amplifier is most useful single


device in analog electronic circuitry.
With only few external components, it can perform a
wide variety of analog signal processing tasks.
One key to the usefulness of these little circuits is in
the engineering principle of feedback, particularly
negative feedback, which constitutes the foundation
of almost all automatic control processes.

EN 202 Electronics

Rajesh Gupta

Single-ended

A "shorthand" symbol for an


electronic amplifier is a triangle, the
wide end signifying the input side
and the narrow end signifying the
output.

General amplifier circuit symbol

V SUPPLY
input

output

V SUPPLY

To facilitate true AC output from an


+V
input
amplifier, we use a split or dual
power supply, with two DC voltage Vinput
sources connected in series with
-V
the middle point grounded, giving a
positive voltage to ground (+V) and
a negative voltage to ground (-V).

EN 202 Electronics

output
15 V

Rload
+
15 V
-

Rajesh Gupta

Differential amplifiers

Most amplifiers have one input and one output. Differential


amplifiers have two inputs and one output, the output signal being
proportional to the difference in signals between the two inputs.
The voltage output of a differential amplifier is determined by the
following equation: Vout = AV(Vnoninv - Vinv)

Differential amplifier

VSUPPLY

input1

input2

() Input1
() Input2
Output

2.5

-3

-2

2.5

-7

10

28

-4

-10

-28

24

-20

output
Voltage output equation =

Vout AV ( Input2 Input1 )


OR

VSUPPLY
EN 202 Electronics

Vout AV ( Input ( ) Input ( ) )


Rajesh Gupta

The "operational" amplifier

High-gain differential amplifiers came to be known as operational


amplifiers, or op-amps, because of their application in analog
computers' mathematical operations.
Op-amp have extremely high voltage gain (AV = 200,000 or more).
Long before computers were built to electronically perform calculations
by employing voltages and currents to represent numerical quantities.
dv
dv
ic C
F m
dt
dt
Where,

ic = Instantaneous current through capacitor

F = Force applied to object

C = Capacitance in farads

m = Mass of object

dv = Rate of change of voltage over time


dt

Where,

dv = Rate of change of velocity over time


dt

Op-amps typically have very high input impedances and fairly low
output impedances.

EN 202 Electronics

Rajesh Gupta

Op-amp electrical model

NONINVERTING

V1
rOut

rin

V2
INVERTING

EN 202 Electronics

VOut

A(V1 V2 )

Rajesh Gupta

Comparator
VCC

Vin

Vout
Vsat

+
Vout

Vin

Vsat

VEE

EN 202 Electronics

Rajesh Gupta

Moving trip point


V CC

VCC

Vin

V in

V Out

VOut

ref

VCC

VEE

R1

R2
VCC
R1 R2

VEE

V EE R 1

CBY

R2

R2

V out

Vout

V sat

Vsat

V ref
Vsat

EN 202 Electronics

C BY

V ref

Vin

V in

V sat

Rajesh Gupta

Schmitt Trigger

Comparator contain noise, output may be


erratic when input voltage is near to trip point

Noise causes output to jump back and forth between


low and high states

Noise triggering can be avoided by schmitt trigger

EN 202 Electronics

Rajesh Gupta

Contd.
VCC

Vin

R2
R1 R2

Vout
Vsat

VOut

ref BVsat

VEE
R1

R2

BVsat

BVsat

V in

V sat

ref BVsat

UTP BVsat , and LTP BVsat


Difference between UTP and LTP is called hysteresis,
required to prevent false triggering due to noise
EN 202 Electronics

Rajesh Gupta

Moving trip point of schmitt trigger


VCC
V in

V in

Vsat

Vout

VCC

R1

R2

cen

R2 R3

VEE

R3

Vout

Vout

R1

R2
VCC
R2 R3

EN 202 Electronics

LTP

R2
VCC
R2 R3

R2 || R3
R1 R2 || R3

V in

UTP

V sat

UTP cen BVsat


LTP cen BVsat
Rajesh Gupta

Problem

Find UTP and LTP


Given
Vcc= 12 V, Vee=-12V, R2=R3=2 k ohm,
R1= 100 k ohm

EN 202 Electronics

Rajesh Gupta

Sine to square waveform


UTP

VCC

LTP
V sat

0
+

V sat

Vout

VEE

R1

Vsat

R2

LTP

UTP

V in

V sat

EN 202 Electronics

Rajesh Gupta

Relaxation oscillator
TOWARD V sat
UTP

R
CAPACITOR

VCC
LTP
V sat

VOut

OUTPUT

V sat

VEE
R2

R1

T 2 RC 1n

EN 202 Electronics

1 B
1 B

T period of output signal


R feedback resistance
C capacitance
B feedback fraction,
Rajesh Gupta

Counter based A/D convertor


Start

Clock

Gate and
control

Counter

N lines
Level amplifiers
Comp.
Analog
input
voltage

Ref.
voltage

N lines
Binary ladder

N lines

Digital output

EN 202 Electronics

Rajesh Gupta

OP-AMP ICs

Most popular 741


Typical 8-pin DIP op-amp
Integrated circuit

No Connection +V
8
7

Output
6

Offset null
5

+V
8

Dual op-amp in 8-pin DIP


7

+
-

+
-

1
Offset
null

EN 202 Electronics

4
-V

4
-V

Rajesh Gupta

Comparator

To compare two voltages

Op-amps are used as signal comparators, operating in full


cutoff or saturation mode depending on which input
(inverting or non-inverting) has the greatest voltage.
+V
LED

Vin

-V

EN 202 Electronics

Rajesh Gupta

Pulse width modulation by comparator


One comparator application is pulse-width modulator, and is made by
comparing a sine-wave AC signal against a DC reference voltage. As the DC
reference voltage is adjusted, the square-wave output of the comparator
changes its duty cycle (positive versus negative times). Thus, the DC reference
voltage controls, or modulates the pulse width of the output voltage.
+V

Vin ~

+V

Vout

Vin

EN 202 Electronics

Vout

-V

-V

Vin Vout

Vin

Vout

Rajesh Gupta

Analog to digital convertor


+V

Simple bargraph driver circuit

LED 4
+
-

LED 3

LED 2
+

LED1
+
Vin

EN 202 Electronics

Rajesh Gupta

Analog to digital convertor


Analog input voltage
C7
7V / 8

Input voltage

C6

C5
5V / 8

V/2

9318

A2

22

A1

21

A0

Digital
outputs

C2

C3 C4 C5

C6

C7

21

20

Low 0

V/ 8 toV/ 4

High Low Low Low Low Low

Low

V/ 4 to 3V/ 8

High High Low Low Low Low

Low 0

3V/ 8 toV/ 2

High High High Low Low Low

Low

V/ 2 to 5V/ 8

High High High High Low Low

Low 1

5V/ 8 to 3V/ 4

High High High High High Low

Low 1

3V/ 4 to 7V/ 8

High High High High High High

Low 1

7V/ 8 toV

High High High High High High

High 1

V/4

C1

C2

Low Low Low Low Low Low

C3
3V / 8

C1

0 toV/ 8
3V / 4

C4

Binary output

Comparator for level

V /8

EN 202 Electronics

Rajesh Gupta

Negative feedback

Connecting the output of an op-amp to its inverting (-) input is called negative
feedback.
When the output of an op-amp is directly connected to its inverting (-) input, a
voltage follower will be created. Whatever signal voltage is impressed upon the
noninverting (+) input will be seen on the output.
An op-amp with negative feedback will try to drive its output voltage to whatever
level necessary so that the differential voltage between the two inputs is practically
zero. The higher the op-amp differential gain, the closer that differential voltage will
be to zero.
The effects of negative feedback

29.99985V

Vin
EN 202 Electronics

V out

+
5.999970000149999V

6V

Rajesh Gupta

Divided feedback
Non-inverting Amplifier
A negative-feedback op-amp circuit with the input signal going to the
noninverting (+) input is called a noninverting amplifier. The output
voltage will be the same polarity as the input. Voltage gain is given by
the following equation: AV = (R2/R1) + 1

R1

R2

1K

1K
- V
out
+

Vout

Vin

EN 202 Electronics

Rajesh Gupta

Contd.
Inverting Amplifier
A negative-feedback op-amp circuit with the input signal going
to the "bottom" of the resistive voltage divider, with the
noninverting (+) input grounded, is called an inverting amplifier.
Its output voltage will be the opposite polarity of the input.
Voltage gain is given by the following equation: AV = R2/R1

R1

R2

0V

1K
Vin

1K
Vout

0V

+
All voltage figures shown in reference to ground

EN 202 Electronics

Rajesh Gupta

Average circuit
Passive averager Circuit

R1

R2
R3

V1

V2

Vout

V1 V 2 V3

R
R 2 R3
1
1
1
1

R1 R2 R3

With equal value resistors:

V3

Vout V1 V2 V 3
3

R1

R2

R3
V out

V1

EN 202 Electronics

V2

V3

V1
V
V
2 3
R1
R2
R3

1
1
1

R1
R2
R3
Rajesh Gupta

Summer circuit
A summer circuit is one that sums, or adds, multiple analog voltage
signals together. There are two basic varieties of op-amp summer
circuits: noninverting and inverting.
Summer circuits are quite useful in analog computer design.

1 k

V1

V2

V3

2 k
-

V1

Vout V2
V3

I1

0V

I2
R

I1 I 2 I 3
Vout

I3
0V

Vout 3

V1 V2 V3
3

Vout V1 V2 V3
EN 202 Electronics

Vout (V1 V2 V3 )
Rajesh Gupta

Differentiator circuits
Differentiator produces a voltage output proportional to the
input voltage's rate of change.
Applications: analog computation, process control
Differentiator

Changing
DC
Voltage

Vin

0V

0V

Vout RC

dv
iC
dt

EN 202 Electronics

0V

Vout

dvin
dt

Rajesh Gupta

Integrator circuits
integrator produces a voltage output proportional to the
product (multiplication) of the input voltage and time
Applications: analog computation, process control
Integrator
R

0V

dv out
V
in
dt
RC

Vin

OR

0V
0V

Vout
+

Vout

Vin
dt c
RC

Where,
C=Output voltage at start time (t=0)

EN 202 Electronics

Rajesh Gupta

Voltage-to-current signal conversion

Voltage signals are relatively easy to produce directly from transducer


devices, whereas accurate current signals are not.
DC current signals are often used in preference to DC voltage signals
as analog representations of physical quantities. Current in a series
circuit is absolutely equal at all points in that circuit regardless of
wiring resistance, whereas voltage in a parallel-connected circuit may
vary from end to end because of wire resistance.
4 to 20 mA

250

Rload
+

Vin

4 to 20 mA
1 to 5 volt signal range

Current independent of load resistance


EN 202 Electronics

Rajesh Gupta

Slew rate

Maximum rate of output voltage change


dv
iC
dt

dvout
I
max
dt
Cc

EN 202 Electronics

dv
i

dt
C

dvout
60 A

2 V / s
dt
30 pF

Rajesh Gupta

Slew rate distortion


Slope

+10 V

SR

+10 V

0
-10 V
-10 V

EN 202 Electronics

Rajesh Gupta

Directly coupled amplifier


Gain bandwidth product constant

OPEN-LOOP VOLTAGE GAIN

Frequency response of Op-amp


f OL

100,000
70,700
10,000
1000
100
10

f unity

1
1

10 100 1 10 100 1
HZ

kH Z

MH Z

FREQUENCY

EN 202 Electronics

Rajesh Gupta

Op-amp Models and circuits


+V

Q2

Q1
Input(+)

Output

Q3

Q5

Q4

(-)Input

Q6
A simple operational
amplifier made from
discrete components

-V

EN 202 Electronics

Rajesh Gupta

555 Timer

EN 202 Electronics

Rajesh Gupta

555 Timer

Versatile IC, have so many application


VCC

THRESHOLD

CONTROL

8
5K

7 DISCHARGE

5K

+
TRIGGER

3
OUTPUT

5K

RESET

GROUND

EN 202 Electronics

Rajesh Gupta

Monostable Operation
8

V CC

VCC

5k
+
-

5k
TRIGGER

+
5k
1

VOut

555
3

V out

0.01 F

TRIGGER
TRIGGER

V CC
3

2
V
3

CC

THRESHOLD
V

EN 202 Electronics

VCC

W = 1.1RC

CC

OUTPUT

Rajesh Gupta

Astable Operation
8

VCC

V CC

RA

RA

RB
6

5k
+
-

RB

5k

+
5k
1

3V

out

5
2

2
V CC
3

f
O VO

D
T

0.01 F

1
V CC
3

VOut

555

EN 202 Electronics

W
100%
T

1.44
( R A 2 RB )C
R A RB
100%
R A 2 RB
Rajesh Gupta

Voltage control Oscillator


VCC

RA
4

RB

VOut

555

5
2

R
+

Vcon
-

Vcon

1
Vcon
2

EN 202 Electronics

Rajesh Gupta

Active Filter

EN 202 Electronics

Rajesh Gupta

Active filters
Frequency selective switch that passes a specified
band of frequency and blocks/attenuates signals of
frequency outside

Analog or digital
Passive or active
Audio (AF) or radio frequency (RF)

EN 202 Electronics

Rajesh Gupta

Analog Active-RC (audio) filter

Active filter advantage

Gain frequency adjustment


No loading problem
Cost

EN 202 Electronics

Rajesh Gupta

Commonly used filters

Low pass filter


High pass filter
Band pass filter
Band reject filter

Gain,

Vo
Vin

Gain,

Vo
Vin

Ideal response

Ideal response

1
Pass
band

Stop band

Stop band

Frequency
fL

fH

Gain,

o
in

Gain,

o
in

Ideal response

Ideal response

1
Stop
0.707 band

Passband

fL

EN 202 Electronics

Stop
band

fC

fH

Pass band

1
0.707
Frequenc
y

Stop
band

Passband

fL

fC

Passband

fH

Rajesh Gupta

Classification of active filter

Butterworth

Chebyshev

Flat passband and flat stopband


Ripple passband and flat stopband

Cauer

Ripple passband and ripple stopband

EN 202 Electronics

Rajesh Gupta

First order low pass butterworth filter


R1

RF

V2

10K

10K

V1

VCC

V1

R
+

Vin

20-k pot at
15.9 k

+
C
0.01 F

1
j 2fC

Vin
1 j 2fRC

+15 V

741/351

jX C
1
in
R jX C

EN 202 Electronics

1 and jX C

VO

VEE

RL

-15 V

10K

R
Vo 1 F V1
R1

R
Vin
Vo 1 F
R1 1 j 2fRC

o
AF

in 1 j( f / f H )

Rajesh Gupta

Contd.
RF
passband gain of the filter
R1
f frequency of the input signal
1
fH
high cutoff frequency of the filter
2 RC
AF 1

o
AF

in
1 ( f / f H )2

1. At very low frequencies, that is, f f H ,

Voltage gain

o
AF
in

20 dB (= 20 log 10)

2. At 3 dB ( 20 log 0.707)

o
A
F 0.707 AF
in
2
3. At f f H ,

-20 dB/decade
AF

0.707 A F

o
AF
in

Passband

Stop band
fH

EN 202 Electronics

Rajesh Gupta

Problem

Design a low pass filter at a cut off


frequency of 1 kHz with a pass band
gain of 2

EN 202 Electronics

Rajesh Gupta

Second order low pass butterworth filter


20-k pot at
15.8 k

R1

Voltage gain

o
AF

in
1 ( f / f H )4

RF

27 K

VCC
-

R2
33 K

Vin

741/351

R3
33 K

C3

C2

0.0047 F

-40 dB/decade

AF

+15 V

VO

0.707AF

fH

RL

VEE

1
R2 R3C2C3

fH

Frequency

10K

-15 V

0.0047 F

AF 1

RF
passband gain of the filter
R1

f frequency of the input signal (Hz)


fH

Gain for butterworth response = 1.586


EN 202 Electronics

1
high cutoff frequency (Hz)
R2 R3C2C3

Rajesh Gupta

Problem

Design a second order low pass filter at


high cutoff frequency of 1 kHz.

EN 202 Electronics

Rajesh Gupta

First order high-pass butterworth filter


RF

R1

Voltage gain

10 K

10 K

VCC
+15 V

20 dB/decade

741/351

0.01 F

+
C

Vin

20-k pot at
15.9 k

VO
-15 V

RL

VEE

10 K

AF
0.707A F

Stop band
fL

RF
passband gain of the filter
R1
f frequency of the input signal (Hz)
AF 1

j( f / f L )
o
AF

in
1 j( f / f L )

EN 202 Electronics

Passband

fL

1
low cutoff frequency
2 RC

o
AF ( f / f L )

2
in
1 ( f / fL )

(Hz)

Rajesh Gupta

Problem
Design a high-pass filter at cutoff
frequency of 1 kHz with a pass-band
gain of 2

EN 202 Electronics

Rajesh Gupta

Second order high-pass butterworth filter


20-k pot at
15.8 k

R1

Voltage gain

RF

27 K

VCC
0.0047 F

Vin

+15 V

741/351

0.0047 F

VO

C3

C2
R2

33 K

40 dB

R3
33 K

-15 V

RL

VEE

10K

o
AF

in
1 ) f L / f ) 4

AF
0.707A F

Stop band

Passband
fL

Frequency

Where AF 1.586 Passband gain for the second order Butterworth


f frequency of the input signal (Hz)
f L low cutoff frequency (HZ)
EN 202 Electronics

Rajesh Gupta

Higher order filter: Third order low pass


First-order lowpass section

Second-order
low-pass section
R1

RF

27 k

27 k

VCC

VCC

20-k pot
at 15.9 k
+

~
-

C
0.01 F

EN 202 Electronics

20-k pot
at 15.9 k

A1

15V

15V

VEE

R
C
0.01 F

20-k pot
at 15.9 k

A2

C
0.01 F

15V

VO
15V

VEE

RL

10k

Rajesh Gupta

Fourth order low pass


SECOND-ORDER LOW-PASS SECTION

SECOND-ORDER LOW-PASS SECTION

R' F

R'1

R1

18 k

RF

22 k

VCC

2.2 k

15 k

VCC
15 V

20-k pot at
15.9 k

R
20-k pot
at 15.9 k

+ 0.01 F

15 V

VEE

VO

A2
R

A1

15 V

20-k pot at
15.9 k

0.01 F

20-k pot at
15.9 k

15 V

VEE
C

RL

10 k

0.01 F

0.01 F

Size increase
accuracy decrease
gain fixed limitation
EN 202 Electronics

Rajesh Gupta

Contd.
Gain,

o
in

AF

Third order (-60 dB/decade roll-off)

0.707A F

Fourth order (-80 dB/decade roll-off)

fH

EN 202 Electronics

Frequency

Rajesh Gupta

Band pass filter

Two types (based on Q factor)

Wide band pass (Q<10)


Narrow band pass (Q>10)
Q

fC
fC

BW
fH fL

fC

EN 202 Electronics

fH fL

Rajesh Gupta

Wide band-pass filter


First-order Highpass section

First-order lowpass section


RF

R1

10 k

10 k

10 k

10 k
20-k pot
at 15.9 k

A1

+
Vin ~
-

15 V

0.05 F

15 V

VEE
R

R
0.01 F

-20 dB/decade

VO
15 V

VEE

RL

10k

20-k pot at
15.9 k

f L 200 H Z

+20 dB/decade

0.707A FT

15 V

A2

Vo
Vin

A FT

VCC

VCC

Gain,

R' F

R'1

Stop
band

Passband
fL

fH

Stop
band
Frequency

f H 2 kH Z

o
AFT ( f / f L )

in
[1 ( f / f L ) 2 ][1 ( f / f H ) 2 ]

EN 202 Electronics

Rajesh Gupta

Problem
Design a wide band-pass
filter with fL= 200 Hz and
fH = 1 KHz, and a pass
band gain of 4. calculate
value of Q for the filter.

EN 202 Electronics

Rajesh Gupta

Band reject filter

Two types (based on Q factor)

Wide band reject (Q<10)


Narrow band reject (Q>10) (notch filter)
Q

fC
fC

BW
fH fL
fC

EN 202 Electronics

fH fL

Rajesh Gupta

Contd.
R1

RF

10 k

10 k
VCC

A1

0.01 F

10 k
VEE

R
20-k pot at
15.9 k

20-k pot
at 15.9 k

Gain,

R4

o
in

Reject
band

Passband

10 k

10 k

15 V

VO

A3

VEE

R OM

A2

15 V

3.3 k

Passband

AF 2
1.414

VCC

R3

VCC

R
0.05 F

R2

15 V

+
Vin

15 V

15 V

RL
10 k

fH

fC

fL

200 H Z

f C f H f L 447.2 H Z

1k

Frequency

V EE
15 V

R'1 10 k

R' F 10 k

EN 202 Electronics

Rajesh Gupta

Wide band reject filter requirement

Low cut of frequency of high pass filter must


be larger than high cutoff frequency of low
pass filter
Pass band gain of both high pass and low
pass must be equal

EN 202 Electronics

Rajesh Gupta

Problem
Design a wide band reject filter with fL=
1 kHz and fH = 200 Hz

EN 202 Electronics

Rajesh Gupta

Field Effect Transistor (FET)

EN 202 Electronics

Rajesh Gupta

Introduction

Developed in 1960s
Operation depend on majority carrier (unipolar transistor)
Category

Advantages

Junction FET (JFET)


Insulated gate FET (IGFET)
Metal oxide semiconductor (MOSFET)

High input impendence (~100 M ohm typical), where BJT typical value 2 k ohm
Easier to fabricate (suited for ICs)
Provide greater thermal stability compared to BJT
Less noisy than BJT and thus more suitable for input stage of low level amp.
Relatively immune to radiation, but BJT is very sensitive

Disadvantage

Small Gain-bandwidth of device compared to BJT


Greater susceptibility to damage in handling

EN 202 Electronics

Rajesh Gupta

JFET
S

N- type

Source

Drain

D
G

P N P

G
S
S
N- Channel, JFET

EN 202 Electronics

Rajesh Gupta

JFET biasing
-

VDS

Back-biased
depletion region

+
P

ID

ID
P

P
D

ID

ID

ID

P
VGS

Current through
n-channel

VDD

ID

+
+

ID

V DD

V GS 0V

Constant current
through n-channel

VGG

Pinch off of n-channel


Slope due to resistance
of n-channel
0

EN 202 Electronics

VD

Rajesh Gupta

Drain source characteristics


VDD
ID

I D (mA )
I D (mA )
VGS 0 V

I DSS

VDD

I DSS

I D I DSS

-1 V

VDS
VGS 0 V

EN 202 Electronics

VGS -1 V

VDS (volts)

VDS (volts)

Rajesh Gupta

Contd.

EN 202 Electronics

Rajesh Gupta

Transfer characteristics
I D (mA)

I DSS

Curve represents
V
I D I DSS (1 GS ) 2
VP

Vp

V
I D I DSS 1 GS
VP

VGS 0 V

I D I DSS

I D 0 , V GS V P

0 VGS
(Volts)

EN 202 Electronics

Rajesh Gupta

Problem

Determine the drain current of an n-channel JFET


having pinch off voltage Vp = -4 V and drain-source
saturation current IDSS =12 mA at the following gatesource voltages

VGS = 0 V, -1.2 V and -2 V

EN 202 Electronics

Rajesh Gupta

Plotting JFET Characteristics


I DSS

VGS 0V

I D 0 mA

+
VDD
-

EN 202 Electronics

D
+

VGG
+

VGS

VDD

Rajesh Gupta

Contd.
I D [ 10 mA(1

VGS
(V)

VGS 2
) ]
5V

V
I D I DSS 1 GS
VP

I D (mA)

(mA)

0
-1
-2
-3
-4
-5

10

10
6.4
3.6
1.6
0.4
0

I DSS

8
6
4
2

-5

-4

-3

-2

-1

VGS (Volts)

VGS

ID

I DSS

0.3VP

I DSS
2

0.5VP

I DSS
4

VP

VP

EN 202 Electronics

Rajesh Gupta

JFET Parameters

Drain source saturation current (IDSS) current at which the channel


pinch off when gate-source shorted (VGS=0)
Pinch-off voltage VP=VGS(off) gate source voltage at which drain source
channel cut off or pinched off resulting no drain current
Dynamic drain resistance (rd): ratio of small change in drain voltage to
the small change in drain current, keeping gate voltage constant
rd

DS
iD VGS const

Mutual conductance or transconductance (gm): ratio of small change in


drain current to the small change in gate voltage, keeping the drain
voltage constant
gm

EN 202 Electronics

iD
GS

VDS const.
Rajesh Gupta

JFET Fixed Biasing


VGS VG VS VGG 0 VGG

VDD

RD
VO

C
RG
V
+ GG

EN 202 Electronics

VGS

ID

VGS
I D I DSS 1
VP

VDS

VD VDD I D RD

Rajesh Gupta

Problem

Find drain current


and drain source
voltage

+12 V

ID

1.2 k
D

VDS

I DSS 12mA
VP 4V

1 M
1.5 V
+

EN 202 Electronics

Rajesh Gupta

Graphical approach
VD VDD I D RD
ID 0

VD VDD

0 V VDD I D RD
VD 0 V

EN 202 Electronics

VDD
ID
RD

Rajesh Gupta

JFET with self bias

With single supply voltage supply


VDD
ID

RD

VS I D RS

IG 0
VG I G RG 0 V

VD

VG 0V
VDS

VGS VG VS 0 V I D RS
RG

VS

VGS

VGS I D RS
ID

EN 202 Electronics

RS

Rajesh Gupta

Contd.

For I D 0 : VGS (O) RS 0 V

For VGS VP : I D

EN 202 Electronics

VP
RS

Rajesh Gupta

Problem

Determine the value of VGS and ID


VDD (24 V)
6.2 k

I DSS 10 mA

VP 4 V
1 M

EN 202 Electronics

1.5 k

Rajesh Gupta

Ans
VGS (V)

I D (mA)

10

[0.3VP ] -1.2

I DSS
2

[0.5VP ] -2.0
[VP ]
-4.0

2.5

I DSS
4

I D (mA)

VGS (V)

VP

RS

2.67

-4

EN 202 Electronics

Rajesh Gupta

Voltage divider bias


VDD

RG1

RD

RG 2
VDD
RG1 RG 2

Vo
VGS VG VS VG I D RS

Vi

RG2

EN 202 Electronics

VG

RS

Rajesh Gupta

Problem

Determine the bias current in the circuit


+16V
2.4 K
2.1 M

Vo

VP 4V
I DSS 8 mA

Vi
0.1F
270k

EN 202 Electronics

1.5 k

20F

Rajesh Gupta

Ans
VGS (V)

I D (mA)

[0.3VP ] -1.2

VG

I DSS
2

I DSS
4

[0.5VP ]

-2

[VP ]

-4

270 k
(16V) 1.82 V
2.1 M 270 k

VGS 1.82 V I D (1.5 k)

ID=0, VGS = -1.82V


For VGS 0 :

ID

VGS
1.82 V

1.21 mA
RS
1.5 k

EN 202 Electronics

I D (mA)

0
1.21

VGS (V)

1.82
0

Rajesh Gupta

Oscillators

EN 202 Electronics

Rajesh Gupta

Sinusoidal oscillator
Oscillator is an amplifier which have positive
feedback to supply own inputs voltage
Requirement
Need a positive feedback (with a resonant circuit)
Loop gain should be unity
x y
+
AB V in
-

Vout = A vin

V in

V out

Vf = AB vin
B

EN 202 Electronics

Rajesh Gupta

Contd.
A

Vout

AB<1

AB>1

AB=1

Initially, AB greater than one, as voltage build up, AB automatically decrease to 1


Starting Voltage : Noise
EN 202 Electronics

Rajesh Gupta

Wien bridge oscillator

For low to moderate frequencies (5Hz to 1 M


Hz)
Uses a feedback circuit called lead leg
network

EN 202 Electronics

Rajesh Gupta

Lead-lag network
R

Vin

Vout

Vout

R || ( jX C )
Vin
R jX C R || ( jX C )
1
9 ( X C /R R / X C ) 2

XC / R R / XC
arctan
3

1
R
2frC

90 o

0o
90 o

f
fr

when X C R

fr

EN 202 Electronics

1
2RC

Rajesh Gupta

Practical circuit

Initially tungsten lamp has


low resistance
As oscillation build up
resistance increases and
gain reaches to 3, then
oscillation stabilize which
stablize tungsten lamp
resistance

VCC

POSITIVE
FEEDBACK

+
Vout

NEGATIVE
FEEDBACK

V EE

R1
2 R
1
1 3
R2
R

EN 202 Electronics

2 R

TUNGSTEN
LAMP

ACL

RL

Rajesh Gupta

Bridge
R

2 R

V CC

Verror
- -

RL
R

EN 202 Electronics

V EE

Rajesh Gupta

Regulated Power Supplies

EN 202 Electronics

Rajesh Gupta

Introduction
Requirements

Output voltage constant despite relatively large


changes in line voltage and load current
Temperature stability
Variable level of voltages

EN 202 Electronics

Rajesh Gupta

Voltage feedback regulation

Use Zener diode as reference


Keep the voltage constant
Series regulator
even input voltage and load
current change due to
R
feedback mechanism
V+

Vin
R3

Q2

Q1

+
-

Vout

BE

R2
R1 R2

Vin

VF VZ VBE

VZ
R1

+
-

VF

BVout VZ VBE
Vout

VZ VBE
B

EN 202 Electronics

RL

R2

VZ zener voltage
VBE base - emitter vo ltage of Q1

Vout regulated output vol tage

Rajesh Gupta

Power dissipation in pass transistor


PD VCE I C

VCE collector emitter voltage, Vin Vout


I C load current plus divider current

When load current is heavy pass transistor has to


dissipate lot of power
Sometime cooling is required

EN 202 Electronics

Rajesh Gupta

Current limiting
R4

Q2

Series regulator has no


short circuit protection
If accidently short the load
terminals, we get an
enormous load current
that will destroy the pass
transistor or a diode

R3
Q3
RS

R1

V in

V out

V BE I SL R4

I SL

VBE

R4

RL

Q1
R2

where I SL short circuit load current


VBE base emitter voltage, 0.6 to 0.7 V
R4 current - sensing resistance

EN 202 Electronics

Rajesh Gupta

Power supply characteristics

Load regulation
Source regulation
Output Impedance
Ripple Rejection

EN 202 Electronics

Rajesh Gupta

Fixed Regulator in market

Vin

LM340-5
3

EN 202 Electronics

Vout Vin

C1

LM340-5

Vout

C2

Rajesh Gupta

Modulation

EN 202 Electronics

Rajesh Gupta

Introduction
Possible way to transmit speech and music

Convert speech or music into electrical signal and transmit


with a help of antenna.
Receiver antenna can pick these signals and fed them to a
loudspeaker to reproduce speech or music

Problem

Energy of audio signal is low and can not be efficiently


radiated. It will die out after covering even a small distance
If different transmitting station make transmission
simultaneously, receiver antenna will pick all the singnal and
it will lead to confusion

EN 202 Electronics

Rajesh Gupta

Contd.

Solution

Audio signal superimposed on the high frequency


carrier wave and then transmit. This process is
called modulation.
The audio signal is called modulating wave and
the signal obtained on superimposing it on carrier
waves is called modulated wave, which is of
high frequency

EN 202 Electronics

Rajesh Gupta

Modulation types
Signal
Carrier

Amplitude modulated

Frequency modulated

EN 202 Electronics

Rajesh Gupta

Simple Amplitude Modulation


VX

Vout

UPPER ENVELOPE

LOWER ENVELOPE
EN 202 Electronics

Rajesh Gupta

Example of amplitude modulated RF stage


V CC

R1

RC
COUT

Cin

RL

fx

VX

~
R2
RE
Vy ~

EN 202 Electronics

CE

fy

Rajesh Gupta

Percent modulation
Sinusoidal modulating stage produce sinusoidal
variation in voltage gain expressed by
A A0 (1 m sin y t )
A instantaneous voltage gain

A0 quiescent voltage gain


m modulation coeffiecient
Voltage gain varies between

A0 (1 m) and A0 (1 m)

Amin 100(1 0.5) 50


if A0 100 and m 0.5
Amax 100(1 0.5) 150
EN 202 Electronics

Rajesh Gupta

Modulation percent
Percent modulation m 100%
V

2Vmax

Vmax

16
2Vmin

Vmin

EN 202 Electronics

2Vmax 2Vmin
2Vmax 2Vmin

8
2

16 4
0 .6
16 4

Rajesh Gupta

AM spectra
out A x
out AVx sin x t
out A0 (1 m sin y t )(Vx sin xt )

out A0Vx sin xt mA0Vx sin y t sin xt


mA0Vx sin y t sin xt

mA0Vx
mA V
COS (x y )t 0 x COS (x y )t
2
2

Vout

UNMODULATED CARRIER

A0 V x (1 m )
A0 V x (1 m )

A0Vx

t
EN 202 Electronics

Rajesh Gupta

out A0Vx sin x t mA0Vx sin y t sin xt

mA0Vx sin y t sin x t

mA0Vx
mA V
cos (x - y )t- 0 x cos(x y )t
2
2

SUM COMPONENT

DIFFERENCE COMPONENT

mA0Vx
2

EN 202 Electronics

mA0Vx
2

Rajesh Gupta

Spectral components
Vout

Vin
Vy

A0 V x

Vx

mA0 V x
2

fy

f
( fx fy ) fx ( fx fy )

fx

AM SIGNAL

EN 202 Electronics

Rajesh Gupta

Demodulation

Envelop detector

Peak detector by diode

Vin

Vin

Vout

RC time constant
function of m

EN 202 Electronics

Rajesh Gupta

THE END
Wish you all the best

EN 202 Electronics

Rajesh Gupta

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