TRNG I HC KHOA HC T NHIN

B MN VT L NG DNG
QUANG HC NG DNG

GVHD: TS. L V Tun Hng

HVTH: Phan Trung Vnh

CC PHNG PHP CH TO MNG

Phng php
ngng t vt l (PVD)

Phng php
ngng t ha hc (CVD)

Physical Vapor Deposition

Chemical Vapor Deposition

Cc ht vt liu ngng t trn Mng

Cc ht vt liu ngng t trn ,

phn ng vi cht kh Hp cht Mng

T < 5000C

Cc ht vt
liu di chuyn

T 900 12000C
Cc phn
ng hnh
thnh hp
cht (nu c), Cc ht vt
xy ra trn
liu di chuyn
ng i

Vi mt tc nhn cung cp nng lng,

vt liu cn ph mng b ha hi.

Mt cht
kh c a
vo (precursor)

Vi mt tc nhn cung cp nng lng,

vt liu cn ph mng b ha hi.

 HAI PHNG PHP PVD PH BIN

Phng php
bc bay chn khng

Phng php
phn x

1. Phng php bc bay

chn khng (Evaporation)
Phng php
bc bay trc tip
Bc bay
nhit in
tr

Bc bay
bng chm
in t

Phng php
bc bay gin tip
Bay hi
phn ng
(RE)

M ion

Ion Plating:
Electron-beam
M ion
Evaporation:
Thermal
Khng
C kch
Evaporation: Bc bay bng
kch hot
hot (ARE)
Bc bay nhit chm in t
Reacting Evaporation: Activated Reactive Evaporation:
Bay hi phn ng
B.hi p.ng c kch hot

1.1 Phng php bc bay trc tip

it
Nh

Nguyn tc chung

H
g
an
qu

er
s
La

m
h
C

Vt liu (rn, lng, bt) Hi vt liu bc Cui cng, hi vt liu ngng

c cung cp E ha hi ln pha trn
t trn , phn b v kt tinh
Tc nhn ha hi l ngun nhit,
BC BAY NHIT IN TR
mu c gi bng in tr
Tc nhn ha hi l chm e c
BC BAY BNG CHM e
ng nng ln

S mt h bc bay
chn khng n gin

BC BAY NHIT IN TR
Mt h bc bay chn khng gm
4 b phn chnh:
H bm chn khng
Bung chn khng
Ngun nhit
H gi & iu chnh T

Mu c gi bng gi in tr,
c t nng n ha hi bng
dng in theo L Joule-Lenz:
Nhit lng
ta ra

Q R.I 2 .t

in tr ca thuyn

Cng
dng in
qua thuyn
Thi gian ta nhit

Cc loi gi in tr: dy
(a-d), thuyn (e-g) v chn (h)

GI IN TR
Vng dy in tr

1 hay nhiu vng dy

Lm bng
Vt liu cn bc bay c qun
trong cc vng dy

Thuyn in tr

Tm kim loi dng thuyn cha

vt liu
Lm bng

Chn in tr

Chn c t nng bng cc si

in tr qun quanh ni
d > 1m
Lm bng Thch anh ph Al O
chu nhit

Tc bay hi(1):

Phng trnh Hertz-Knudsen

p sut hi cn bng
ca cht bay hi
p sut ca
cht bay hi trong
dN e
p* p
bung chn khng
.

S nguyn t bc bay
trong 1 n v thi gian

Din tch b mt ca
ngun bc bay.

Ae .dt

H s bc bay(2)

2 .m.k BT

Khi lng
nguyn t

Nhit tuyt i (K)

Hng s Boltzmann
(1,38.10-23J/K )

Trong , p sut hi cn bng l 1 hm theo nhit :

Hng s

p* p0 .e

L0
k BT

Nhit n bc bay ca 1
nguyn t hay phn t

Tc bay hi: S nguyn t bc bay i qua 1 n v din tch trong 1 n

v thi gian.
(2)
H s bc bay (Evaporation Coefficient): H s dnh cht ca nguyn t bay
hi trn b mt.
(1)

S phn b hng ca cc nguyn t bc bay:

nh lut phn b Cosine:

N i N 0 .cos i
N0: s ht nm trn
phng php tuyn
vi mu trong 1 n
v thi gian
Ni: s ht nm trn
phng hp vi
phng php tuyn
1 gc i

u im & hn ch ca p.p bc bay nhit in tr

U IM
n gin
R tin

Kh
n
g

HN CH
Vt liu Tnng chy cao
HP CHT, HP KIM

BC BAY BNG CHM e

Sng e

Ht
vt liu

Mu c cung cp nng lng

ha hi t s va chm vi
chm in t c ng nng ln.

Cu to ca sng in t

Mu

Cun t
trng

Chm e

Chm electron

Cathode c t nng Pht

x nhit in t, tun theo phng
trnh Richardson: Nhit kim loi
Mt dng
pht x
nhit in t
Hng s
kim loi

j A0 DT e
2

H s truyn
qua trung bnh

0
k BT

Cng thot
ca e ra
khi kim loi

Hng s Boltzmann

Vt liu
cn ph

Chn ng

Th gia tc
(6-10kV)

Th t

Cun t
trng

Vt liu
cn ph

Chm electron

Chn ng

Th gia tc
(6-10kV)

Chm electron c
gia tc trong in trng,
nh hng trong t
trng, va chm vi b
mt vt liu.
Chn ng mu c
gii nhit bng nc
trnh hao mn.

Th t

u im & hn ch ca p.p bc bay bng chm e

U IM
Vt liu Tnng chy cao
HP CHT, HP KIM

HN CH

Thit b t tin!

BC BAY BNG XUNG LASER

(PLD Pulse Laser Deposition)
Electron
Nguyn t
trung ha
+ Ion +
+
+

+
+

+
+

Chm laser xung cng

sut ln c chiu vo bia.
Bia hp thu nng lng
laser, nng ln v bay hi

Laser Pha trn bia hnh thnh

mt vng khng gian cha

plasma pht sng
Cc ht vt liu bia
ngng t mng trn

Thng tin v ngun laser xung thng s dng

Laser Excimer KrF: = 248nm
di xung: t = 25ns
Mt cng sut: j = 2,4.108W/cm2

Vng din tch chiu ri ln bia: A = 0,1cm2

Tn s lp li: f = 50Hz

Nng lng
LASER
bia hp thu

Kch thch, ion ha

nguyn t vt liu

Cung cp ng nng
ln cho ht vt liu

Ph v lin kt
mng thot khi bia

Kch thch e thot

ra khi bia

Nguyn t, cm
nguyn t trung ha

Kch thch ion

nguyn t vt liu

Trong qu trnh n bia

Mc chn khng

Nguyn t
kch thch
Trng thi
c bn

Pht
sng

HNH THNH PLASMA

Gin dch
chuyn nng
lng ca e,
nguyn t, ion +
+
+

Ion
kch thch

+
+
u im ni bt nht ca p.p PLD: ph mng trn nhng tinh vi

1.2 Phng php bc bay gin tip

Phng php bc
bay trc tip

Hp cht

HIN TNG
PHN LY

Mng khng tinh

khit / b bin cht

KP:

Phng php bc bay gin tip

Bay hi
phn ng
(RE)
(khng kch hot)

Thng dng
mng oxit
kim loi nh
TiO2, SiO2,...

Bia l vt liu n cht

Mt kh n cht c B
a vo bung chn khng
Phn ng A & B Vt liu
hp cht (AxBy)

Bay hi phn ng (RE)

Hp cht Carbides: TiC, VC,
NbC, Cr3C2...; Hp cht Nitrides:
TiN, VN, ZrN,...; Oxides: Al2O3

KP:

Hp cht

PHN NG A &
B KH XY RA

Tc lng ng
mng NH

P.P. bay hi phn ng c kch hot (ARE)

C thm 1 dy l xo, c t nng
bi ngun in V1 Pht x nhit in t

in t pht x c gia tc bi in
trng V2 Va chm kch thch kh A, B

V1

V2

Phn ng gia A v B xy ra vi xc
sut ln Hp cht AxBy

 Xut pht t m hnh bay hi phn ng

M ion
(Ion Plating)

V1

AxBy

Mt dy tc c t nng
Pht x nhit in t
in t pht x gia tc trong
in trng Va chm ion ha
phn t AxBy thnh ion (AxBy)V2

AxBy

(AxBy)e-

(AxBy)- gia tc trong in p

gia bia-, hng v vi
nng lng ln Hp cht AxBy

U IM bm dnh mng- tt
Mt mng cao

2. Phng php phn x

(Sputtering)
Phn x
diode phng

Vbia-

Phn x
Magnetron
H magnetron

P.X.M
dng mt
chiu (DC)

P.X.M
dng xoay
chiu (RF)

P.X.M DC cn bng

P.X.M DC khng cn bng

P.X.M RF cn bng

P.X.M RF khng cn bng

P.X.M
cn bng

P.X.M
khng
cn bng

Trc tip

Phn ng

2.1 Phn x diode phng

+
+
+

Ht vt liu
ngng t trn ,
lp mng.
+

+
+

+
Trong vng khng gian bn trong
bung chn khng, c sn mt s p mt in th DC ln bia-,
ion dng v eion + tin v bia, e- tin v
Ion + va chm b mt bia pht x e th cp va chm ion ha sn Ion + nh bt
sinh ion + duy tr plasma v phng in.
ht vt liu trn bia
Mt kh n cht (thng l Ar) c a vo lm gia tng ion +
: ht phn x
trong va chm ion ha.

 u im & hn ch ca p.p phn x diode phng

U IM

HN CH

Khng t
nng trc
tip vt liu
Ch
t
ba
y
Th
h
uy
i
n

Phi dng Vbia- ln lm

th mi phng in
T
p

th
uy
n

ch
t

S mt mt e th cp ln
Tc lng ng nh

KP:

2.2 Phn x magnetron

T m hnh p.x. diode phng, c thm h magnetron,
h cc nam chm nh hng N-S nht nh ghp vi nhau

Cc tm m

Cc ng sc t trng

H magnetron c gn bn di bia, di cng

l tm st ni t.

Tm st ni t

e th cp sinh ra t va chm gia ion + v bia,

chuyn ng c bit trong in t trng.

Khong khng gian gia anode

v cathode c th chia lm 3
vng (Mi vng c phn b th
nng khc nhau):

c trng ca qu trnh phn x

Vng plasma: mt ion + gim dn,

do , in th m tng chm dn.

3
Vng ion ha: e chuyn ng c
bit trong in t trng vi ve
ln, ion ha nguyn t kh, lm tng
mt e, in th m tng n gi tr
ngng, ri gim do qu trnh ti hp.

2
Vng st th Cathode: e th cp va
mi c sn sinh t va chm ion + v
bia, in th m tng dn (st th), ve
nh v c gia tc trong in trng.

ve: vn tc e th cp

Cathode

V = |-Ve|

1 2

Anode

Lc Lorentz

Qu o chuyn ng ca e

T trng

e chuyn ng trong t trng s

chu tc dng ca lc Lorentz. Hng
lc tun theo Quy tc Bn tay tri:
+

Vn tc ht

ur
r ur
f Loz q. v B

Trong h phn x magnetron, e chuyn ng va trong

in
t trng (khng u), va trong in trng (u).
trng
r
Xem nh t trng u
B
r
z
B (hng v)
x
-

r
y E

r
E
y

N
Fin M

fLoz

O-

r
E y

r
E y

fLoz

fLoz

r
B (hng v)

r
B (hng v)

Gi s, e th cp va thot ra khi bia

c v 0. Ti O, e ch chu tc dng ca
in trng E, di chuyn n O.
Ti O, e c v1 0, nn chu tc dng
ca lc Lorentz theo phng x. V v1 cn
nh nn fLoz < Fin. e di chuyn n M.
e gia tc trong in trng. Ti M, e c
v2 > v1, fLoz ln hn O v tin ti bng
Fin. e di chuyn n N.
Ti N, e c v3 > v2, fLoz ln hn Fin , e di
chuyn n P ri n Q.
Ti Q, fLoz bt u gim nhng vn cn
ln hn Fin, e c v4 < v3. C th, sau 1
lc, fLoz = Fin, e tr v nm trn trc Ox
v mt chu k mi bt u.

e chuyn ng theo qu o cycloid (hay qu o trng ua)

in trng

H magnetron lm tng qung ng i

chuyn ca e tng kh nng ion ha.
N
S

 Phng trnh chuyn ng ca in t trong in trng

v t trng vung gc c dng:
sin t
xc
1
H
t

Ey
yc
1 cos t
.H
E y .t

Trong :
Ey: ln ca vector cng in
trng theo phng y
H: ln vector cng t trng
t: thi im kho st

H magnetron cn bng v khng cn bng

H magnetron cn bng
H magnetron
cn bng,
cc nam
chm c
cng
nh nhau.
Cc ng
sc t
trng
khp kn.

H magnetron khng cn bng H mag-

netron
khng
cn bng,
nam chm
gia c
cng
yu hn.
Cc ng
sc t
trng
khng
khp kn.

H magnetron cn bng

H magnetron khng cn bng

r
B (hng v)
in trng

T trng
khp kn

Cc e chu tc dng
ca t trng ngang

T trng
khng khp kn

Cc e t chu tc dng
ca t trng ngang

t b e
va p

e ch yu chuyn
ng gn bia

b nhiu e
va p mnh

e theo in trng
n vi v ln

t b
t nng

Thch hp to mng cho

cc loi khng chu
c T0 cao: nha, giy,

b
t nng

Thch hp to cc
mng yu cu T0 cao

 H phn x DC v RF
H phn x mt chiu
(DC Direct Current)

H phn x xoay chiu

(RF Radio Frequency)
B tr khng
v h t in
Tng cng sut
phng in
Vanode-cathode l
xoay chiu
Bia s dng
cch in
Vbia

Vanode-cathode l
mt chiu

duy tr
phng
in

e- bn ph

Bia s dng
phi dn in

t
Ion + bn ph

 u im & hn ch ca p.p phn x magnetron

U IM

HN CH

H nc lm mt
N. lng

Mng a lp

Bia

R
TIN

Cng nghip

Mn g

Bia
bm
dnh cao

< Cc p.p. khc

t tin

Bia

g gh

Kh ch
to

Mng mng

chnh
xc cao

 PHNG PHP SOL-GEL

H cc ht phn tn,
kch thc: 0,1 1m
Lc tng tc gia
cc ht: Van der Waals
H SOL

Cc ht chuyn ng
Brown, va chm nhau

Sau mt thi gian,

cc ht sol ht nhau

Ht sol

H GEL

Dung dch ng t
li thnh keo

Mt s precursor ph bin:
Cht ban u to nn H SOL PRECURSOR
Cng thc chung: M(OR)x
M: nguyn t kim loi
R: nhm alkyl (CnH2n+1)

Tetramethoxysilan (TMOS)
Tetraethoxysilan (TEOS)
Alkoxy Aluminate
Alkoxy Titanate
Alkoxy Borate
...

Cc qu trnh xy ra khi t h sol h gel

Phn ng thy phn
M(OR)n + xH-OH M(OR)n x(OH)x + xROH
Nhm alkoxide (-OR) Kim loi
H SOL

Nhm hydroxyl (-OH) Kim loi

Thiu kt

2
Phn ng ngng t

Ngng t ru
M(OH)(OR)n-1 + M(OR)n (OR)n-1M-O-M(OR)n-1 + ROH
Ngng t nc
M(OH)(OR)n-1 + M(OH)(OR)n-1 (OR)n-1M-O-M(OR)n-1 + H2O
Sau phn ng ngng t, dung dch c c li thnh khi rn

T0cao: mu chuyn
pha v nh hnh
sang tinh th
H GEL

Hai phng php to mng t qu trnh sol-gel

Ph nhng
(Dip Coating)

Ph quay
(Spin Coating)

c nhng vo
dung dch sol, sau
c ko ra
t t mng/

Dung dch
dc c nh
ln v cho quay.
Lc ly tm mu git
lan ta u trn
mng/

dmng ph thuc: vko,

dmng ph thuc:

gc ko, nht, nng

dd,... Khng u

nht, vbay hi, vquay,...

ng u

u im & hn ch ca phng php sol-gel

n gin

Cpha tp

U IM

K
H

HN CH

d dng
m
ki

t
so

dy mng
kim sot

Cm n Thy v cc bn
quan tm theo di

 Chng ti dch c mt s chng

ca mt s kha hc thuc chng trnh
hc liu m ca hai trng i hc ni
ting th gii MIT v Yale.
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