O LNG IN

BI TP
CHNG I: O IN P V DNG IN

1.1

Mt ampe-k dng c cu o t in c in tr c cu o R(m) =99 v dng lm

lch ti a Imax = 0,1mA. in tr shunt Rs = 1. Tnh dng in tng cng i qua
ampe-k trong cc trng hp:
kim lch ti a
a)
0,5Dm; (FSD = Imax, full scale deviation)
b)
0,25Dm
c)

Hnh B.1.1
Gii:
a) kim lch ti a Dm:
in p hai u c cu o:
Vm=Im.Rm=0,1mA.99=99mV
IsRs = Vm => Is =

Vm 9,9mV
=
= 9,9mA
Rs
1

Dng tng cng:

I = Is + I = 9,9 + 0,1 = 10mA
b) 0,5Dm:
Im = 0,5 . 1mA = 0,05mA
Vm = Im.Rm = 0,05mA.99 = 4,95mV
Is =

Vm 4.95mV

4.95mA
Rs
1

I = Is + Im = 4.95mA + 0,05mA=5mA
c)0,25mA:
Im = 0,25.0,1mA = 0,025mA
Vm = ImRm = 0,025mA.99 = 2,475mV
Io=

Vm
2,475

2,475V
Rs
1

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O LNG IN

BI TP

1.2 Mt c cu o t in c I= 100A, in tr ni khung quay R= 1K. Tnh in tr

shunt mc vo c cu o tr thnh mt ampe-k tng ng vi hnh 1.1.
a) Dm = 100mA = tm o 1
b) Dm = 1A = tm o 2
Gii:
a) tm o 100mA
Vm= ImRm = 100.1 = 100mV
It = Is+ Im => Is = It Im = 100mA 100A = 9,9mA
Vm

100mV

Rs = Is 99,9mA 1,001
b) tm o 1A:
Vm = ImRm = 100mV
Is= It Im = 1A- 100A= 999,9mA
Vm

100mV

Rs= Is 999,9mA 0,10001

1.3 Mt c cu o t in c ba in tr shunt c mc theo kiu shunt ayrton s dng
lm ampe-k. Ba in tr c tr s R1=0,05, R2=0,45, R3=4,5, Rm= 1k, Imax=
50A, c mch o nh hnh sau, tnh cc tr s tm o ca ampe-k

Hnh B.1.3
Gii:
Ti lch 0,5 Dm
Vs= Imax.Rm= 50A.1k = 50mV
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O LNG IN

Is=

BI TP

Vs
50

10mA
R1 R2 R3 5

It=Is+Im=50A+10mA = 10,05mA; I=10mA.

Kha in C:
Vs= Im(Rm+R3) = 50A.(1k+4,5) = 50mV
Is=

Vs
50mV

100mA
R1 R 2
0,5 4,5

Kha in D:
Vs= Im(Rm +R2 +R3) = 50A(1k + 4,5 +0,45) =50mV
Vs

50mV

Is = R1 0,05 1A.I = 50A+1A=1,00005A = 1A

1.4 Mt c cu o t in Imax =100A,in tr dy ni (dy qun) Rm = 1K c s
dng lm vn k DC. Tnh in tr tm o vnk c Vtd= 100V. Tnh in p V
hai u vn k khi kim c lch 0,75Dm; 0,75Dm v 0,25Dm ( lch ti a Dm)

Hnh B.1.4
Gii:
V = IM (Rs + Rm) => Rs =

V
Rm
Im

Khi V= Vtd=100V => IM = Imax =100A

100V

Rs = 100 A -1K =999K

Ti lch 0,75 Dm
Im = 0,75.100A = 75A
V= Im(Rs+ Rm) 75A(999k +1k)=75V
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BI TP

Ti lch 0,5 Dm
Im = 50 A
V= 50 A(999 k+1k)=50V
Ti lch 0,25 Dm
V= 25A(999 k+1k)=25V
1.5 Mt c cu o t in c Imax=50 A; Rm =1700 c s dng lm vn k DC c
tm o 10V, 50V, 100V. tnh cc in tr tm o theo hnh sau:

Hnh B.1.5
Gii
Theo hnh a:
Rm R1
R1

V
I max

V
I max

Rm

10V
1700 198,3k
50 A

50V
1700 998,3k
50 A
100V
R3
1700 1,9983M
50 A
R2

Theo hnh b:
R1

V1
10V
Rm
1700 198,3k
I max
50 A

Rm R1 R2

V2
Im

V2
50V
R1 Rm
198,3k 1700 800k
Im ax
50 A
V
V3
Rm R1 R2 R3
R3 3 R2 R1 Rm
I max
Im
R2

100V
800k 198,3k 1700 1M
50A

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O LNG IN

BI TP

1.6 Mt vnk c tm o 5V, c mc vo mch, o in p hai u in tr R2

nh hnh sau:
a) Tnh in p VR2 khi cha mc Vnk.
b) Tnh VR2 khi mc vn k, c nhy 20k/V.
c) Tnh VR2 khi mc vn k, c nhy 200k/V

Hnh B.1.6
Gii:
a) VR2 khi cha mc Vnk.
VR 2 E

R2
50k
12V
5V
R1 R 2
70k 50k

b)Vi vn k c nhy 20k/V.

Rv=5V.20k/V=100k
Rv//R2=100k//50k=33,3k
E

VR2=

Rv // R2
33,3k
12V
3,87V
R1 Rv // R2
70k 33,3k

c)Vi vn k c nhy 200k/V

Rv=5V.200k/V=1k
Rv//R2=1M//50k= 47,62k
V R 2 12V

47,62k
=4,86V
70k 47,62k 4,86V

1.7 Mt c cu o t in c Ifs= 100A v in tr73 c cu o Rm =1k c

s dng lm vnk AC c V tm o = 100V. Mch chnh lu c dng cu s
dng diode silicon nh hnh v, diode c VF(nh) =0,7V
a)

tnh in tr ni tip Rs
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O LNG IN
b)

c)

BI TP

Tnh lch ca vnk khi in p a vo vnk l 75V v 50V (tr hiu dngRMS).
Tnh nhy ca vn k. Tn hiu o l tn hiu xoay chiu dng sin.

Hnh B.1.7
Gii:
a) Tnh Rs:
y l mch chnh lu ton k nn ta c quan h:
IP(tr nh)= Itb/0,637
Vm (tr nh)=

2V

C cu o c:

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O LNG IN
I Fs I tb 100 A I p

BI TP
100 A
157 A
0,637

tac :
1,414Vtd 2V F
1,414Vtd 2V F

Rs
Rm
Rs Rm
Ip
(1,414.100V ) (2.0,7V )

1k 890,7 k
157 A
b) KhiV 75V
1,414V 2V F
(1,414 75V ) ( 2 0,7V )
I tb 0,637 I m 0,637
0,637
Rs R m
890,7 k 1k
I tb 75A
KhiV 50V
(1,414 50V ) (2 0,7V )
I tb 0,673
50 A
890,7 k 1k
c ) I m 157 A I ( RMS ) 0,707 IP 0,707 157 A 111A
100V
900,9k.
111A
900,9k
9,009k / V
nhy=
100V
R

1.8 Mt c cu o t in c Ifs = 50A; Rm = 1700 kt hp vi mch chnh lu bn

k nh hnh sau. Diod silicon D1 c gi tr dng in thun If (nh) ti thiu l 100
A. Khi in p o bng 20% Vtm o , diode c VF = 0,7V, vn k c Vtm o = 50V.
Tnh Rs v RSH
a)
Tnh nhy ca Vnk trong hai trng hp: c D2 v khng c D2
b)

Hnh B.1.8
Gii:
a)Tnh Rs v RSH
y s dng chnh lu bn k nn ta c:
Ip=Itb/(0,5.0,673): tr nh trong trng hp chnh lu bn k
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O LNG IN

BI TP

C cu o c Ifs = Itb = 50 A=> Im= 50 A/(0,5.0,673) = 157 A(tr nh)

Khi V= 20% Vtd, IF(nh) c gi tr 100 A. Vy khi V= Vtd, IF(nh) c
gi tr:
100%
100A 500 A
20%
I m I SH I SH I F I M 500 A 157 A 343A

IF
IF

V p I m Rm 157 A 1700 266,9mV

R SH

Vm
266,9mV

778
I SH
343A

IF

1,414Vtd Vm V F
RS

Rs

1,414Vtd Vm V F
1,414 50V 266,9mV 0,7V

139,5k
IF
500 A

b)Tnh nhy:
C D2 trong bn k dng, dng qua D1 c gi tr nh: IF=500 A

Trong bn k m, dng qua vnk c gi tr nh:

1,414Vtd
1,414.50V

500 A
Rs
139,5k
I hiudung 0,707.500 A 353,5A( RMR)c
I

50V ( RMR)
141,4k
353,5A( RMR)
141,4k
nhay
2,8k / V
50V
Rtng

Khng c D2:

Trong bn k dng:IF(nh) = 500 A. Trong bn k m: I = 0

Trong chu k ca tn hiu:
Ihiu dng =0,5I F(nh)
Vi I l dng in mch chnh chy qua Rs trong bn k dng.
I

2
hiudung

2T

T 2

( I F sin t ) dt
2

I F2 ( inh )
4

I 0,5.500 A 250A
50V
R
200k
250 A
200k
_ nhay :
4k / V
50V

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O LNG IN

BI TP

1.9 Mt ampe k s dng c cu o t in c cu chnh lu v bin dng nh hnh

v. Bit rng c cu o c Ifs = 1mA v Rm = 1700. Bit dng c Nth = 500; Ns
= 4. Diode cVF(nh) = 0,7V; Rs=20k. Ampe k lch ti a khi dng s cp Ip
= 250mA. Tnh gi tr RL.

Hnh B.1.9
Gii:
Chnh lu ton k nn ta c:
Itb

1mA

Im(tr nh) 0,637 0,673 1,57 mA

in p Em hai u cun th bin dng(tr nh):
Em = (Rm+Rs) + 2VF = 1,57mA(20k + 1700) + 1,4V= 35,5V
Es(tr hiu dng) = (0,707.35,5V) = 25,1V
Dng lm lch ti a c cu o c tr hiu dng I:
I = 11,1Itb = 11,1.1mA=11,1mA
Ta c:
I thu I so

N so
4
250mA
2mA
N thu
500

I thu I q I L I L 2mA 11,1mA 0,89mA; (vi Iq=Iqua c cu o)

Es
25,1V
RL

28,2k
E L 0,89mA

CHNG II: O IN TR
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O LNG IN

BI TP

2.1 Cho Eb = 1,5; R1= 15k; Rm =1k; R2 = 1k; Imax = 50A. Xc nh tr s c

ca Rx khi Ib = Imax; Im = Imax; Im =3/4 Imax .
Gii:
Ti Im =Imax = 50A; Vm = Imax Rm = 50A 1k = 50mA.
Vm 50mV

50 A . Nh vy dng in: Ib = 100A.

Do : I m
R2
1k
Vy Rx R1 #

Eb
Ib

Nu R x R1 R2 // Rm 500 .

1,5V

# 100 A 15k. Rx +15k = 15k; Rx = 0.

Khi Im =1/2 Imax = 25A; Vm = 25mV I2 = 25A.
1,5V

Suy ra Ib = 50A. Vy Rx + R1 # 50 A ; Rx # 15k.

Tng t nh cch tnh trn. Im = 3/4 Imax = 37,5A.
Ib = Im + I2 = 37,5A + 37,5A = 75A.
1,5V

Rx + R1 = 75A = 20k, Rx = 5k.

2.2 Mt ohm-k loi ni tip c mch o (Hinh di y). Ngun Eb = 1,5V, c
cu o c Ifs = 100A. in tr R1 + Rm = 15k.
a)Tnh dng in chy qua c cu o khi Rx = 0.
b)Tnh tr gi Rx cho kim ch thi c lch bng 1/2 FSD, 1/4 FSD, 3/4 FSD
(FSD: lch ti a thang o.)

Hnh B.2.2
Gii:
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O LNG IN

a. I m
b.

BI TP

Eb
1,5V

100 A (FSD).
R x R1 Rm 0 15k

lch bng 1/2 FSD:

100 A
50 A (v c cu o tuyn tnh.)
Im =
2

R x R1 Rm

lch bng 1/4 FSD:

100 A
Im

Eb
E
1,5V
R x b R1 Rm
15k 15k
Im
Im
50A

25A ; R x

1,5V
15k 45k
25A

lch bng 3/4 FSD:

1,5V

Im = 0,75 100A = 75A; R x 75A 15k 5k.

2.3 Mt ohm-k c mch o nh hnh sau. Bit Eb =1,5V, R1 = 15k; Rm = 50;

R2 = 50; c cu o c Ifs = 50.
Tnh tr gi Rx khi kim ch th c lch ti a: (FSD); 1/2 FSD v 3/4 FSD.

Hnh B.2.3
Gii:
Khi kim lch ti a (FSD):
Im = 50A; Vm = Im.Rm = 50A50 = 2,5mV.

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O LNG IN
I2

BI TP
Vm 2,5Vm

50 A
R2
50

Dng in mch chnh: Ib = I2 + Im = 50A + 50A = 100A.

E
1,5V
R x R1 b
15k
I b 100 A
Rx = ( Rx + R1) R1 = 15k - 15k = 0
Kim lch 1/2 FSD:
Im = 25A; Vm = 25A 50 = 1,25mV; I 2
Ib = 25A + 25A = 50A.
Rx R1

1,25mV
25A
50

1,5V
30k ; Rx = 30k - 15k = 15k.
50 A

Kim lch 3/4 FSD:

Im = 0,75 50A = 37,5A; Vm = 37,5A50 = 1,875mV.
I 2

1,875mV
37,5A ; Ib = 37,5A + 37,5A = 75A.
50

R x R1

1,5V
20k R x 20k 15k 5k .
75A

2.4 Mt ohm-k co mch o nhiu hnh bai 3. c ngun Eb giam xung ch cn

1,3V. Tnh tr gi mi ca R2 ?.?li cc gi tr Rx tng ng vi lch ca
kim: 1/2 FSD, 3/4 FSD.
Gii:
Eb
1,3V

86,67 A
Rx = 0; I b
R x R1 0 15k
Im = 50A (FSD); I2 = Ib Im = 86,67A 50A = 36,67A.
Vm
2,5mV

68,18
Vm = ImRm = 50A 50 = 2,5mV; R2
I2
36,67 A
Khi kim lch 1/2 FSD:
Im = 25A; Vm = 25A 50 = 12,5mV

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O LNG IN

BI TP

Vm 1,25mV

18,33A
R2
68,1
Ib=Im + I2 = 25A + 18,3A =43,33A
V
1,3V
R2 R1 m
30k R x 30k 15k 15k
Ib
43,33A
Khi kim lch 3/4 FSD:
I2

Im = 0,75 50A = 37,5A; Vm = 37,5A 50 = 1,875mV.

I2

1,875mV
27,5A;
68,18

R x R1

Ib =37,5A + 27,5A = 65A.

Vm
1,3V

20k R x 20k 15k 5k

Ib
65A

2.5 Tnh dng in chy qua c cu o v lch ca kim ch th ca ohm-k c

mch d nh hnh v khi ta s dung tm o R1 trong hai trng hp:
a)Rx = 0
b) Rx = 24

Hnh B.2.5
Gii:
Mch tng ng ca ohm- k khi ta s dng tm o R1 trong hai
truwowg\ngf hp Rx = 0 v Rx = 24 nh sau:

Rx = 0; I b
Ib

1,5V
14 10 // 9,99k 2,875k 3,82k

1,5V
62,516 mA
14 10 // 16,685k

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O LNG IN

BI TP

Dng Im chy qua c cu o:

I m 62,516mA

10
10 16,685k

Im = 37,5A = Ifs: Khi kim lch ti a.

Rx = 24:
1,5V
Ib
31,254mA
24 1410 // 16,685k
I m 31,254mA

10
18,72A : kim lch 1/2 FSD.
10 16,685k

2.6 Tnh dng in chy qua c cu o v lch ca kim ch th ca ohm-k c

mch nh bi 5, khi s dng tm o R100 va R10k trong trng hp Rx =
0.

Hnh B.2.6
Gii:

Mch tng ng ca Ohm-k khi ta s dng tm o R100 v R = 0.

Ib

1,5V
1470 1k // 9k 2,875k 3,82k
1,5V

622,38A
236k 1k // 15,695k

I m 62238A

1k
37,5A I fs : kim ch th lch ti a.
1k 6,695k

Mch tng ng ca ohm-k khi ta s dungj tm o R10k v Rx = 0.

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O LNG IN

Ib

BI TP

15V
236k 10k // 2,875k 3,82k

15V
62,5A
236k 10k // 6,695k

I m 62,5A

10k
37,5k I fs : Kim ch th lch ti a.
10k 6,695k

2.7 Ta o in tr bng cch dng phng php V v A c mc r di. Ampek ch 0,5A,vn k ch 500V.Ampe k c Ra = 10,10k/V. Tnh gi tr R.

Hnh B.2.7
Gii:
E + EA = 500V; I = 0,5A
Rx R

E E A 500V

1000
I
0,5 A

R = 1000 - Ra = 1000 - 10 =990.

2.8 Cc ampe-k, vn k v in tr R bi 2.7 c mc r ngn. Hy tnh
ch ca vn k v ampe-k (ngun cung cp vn l 500V).

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BI TP
Hnh B.2.8
Gii:

Ni tr ca vn k :
Rv = 1000V 10k/V =10M
Rv // R = 10M // 990 = 989,9

500V Rv // R 5000V 989,9

495V
R a Rv R
10 989,9

ch ca vn k : E

ch ca ampe-k: I I v R // R 989,9 0,5 A .

v

495V

CHNG III:
O IN DUNG, IN CM V H CM
3.1.Cho cu o nh hnh v , bit C1 =0.1F v t s R3/R4 c th chnh c thay
i trong khong : 100/1 v 1/100 . Hy tnh CX m cu c th o c.

Hnh B.3.1
Gii:
Ta c: Cx = C1R3/R4 . Vi : R3/R4 =100/1
=>CX = 0,1F(100/1) =10F
Vi : R3/R4 =1/100 => 0,1F(1/100) =0,001F
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O LNG IN

BI TP

Vy cu c tm o : t 0,001F 10F
3.2. Cho cu in dung nh hnh sau, thnh phn mu C1 =0,1F ;R3 =10k. Bit rng
cu cn bng khi ngun cung cp co f = 100Hz; R1 =125 v R4 = 14,7 . Hy tnh gi
tr Rs , CS v h s tn hao D ca t?

Hnh B.3.2
Gii:
Ta c : Cs =C1R3/R4;
CS =

0,1F 10 k
= 0.068F ;
14,7 k

RS =

R1 R 4 125 14,7 k
=
=183.3
R3
10k

D = CSRS = 2 . 100Hz

0,068F 183,8 = 0,008

3.3. Cho cu in dung nh hnh sau, thnh phn mu C1 =0,1F ;R3 =10k. Bit rng
cu cn bng khi ngun cung cp co f = 100Hz; R1 =125 v R4 = 14,7 . Hy tnh gi
tr Rs , CS v h s tn hao D ca t?

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BI TP

Hnh B.3.3
Gii:
Ta c : Cs =C1R3/R4;
CS =

0,1F 10 k
= 0.068F ;
14,7 k

RS =

R1 R 4 125 14,7 k
=
=183.3
R3
10k

D = CSRS = 2 . 100Hz

0,068F 183,8 = 0,008

3.4.Cu Maxwell o in cm dng thnh phn mu C3 = 0,1F, ngun cung cp c tn

s f=100Hz. Cu cn bng khi R1 =1,26k; R3= 470 v R4 =500 .Tnh tr gi in
cm LS, in tr RS v h s phm cht Q ca cun dy.

Hnh B.3.4
Gii:
Ta c :LS =C3R1R4 =0,1F 1,26k 500 63mH
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O LNG IN

R1 R 4 1,26k 500

1.,34k
R3
470

RS =

Q=

BI TP

LS 2 100 Hz 63mH

0,03
RS
1,34k

3.5. Cu c ngun cung cp f= 100Hz cn bng khi C3 =0,1F, R1 =1,26k , R3 =75 v

R4 =500. Tnh in cm LP ,in tr RP v h s phm cht Q ca cun dy?

Hnh B.3.5
Gii:

L P C 3 R1 R4 0,1F 1,26k 500 63mH

RP

Q=

R1 R 4 1,26k 500

8,4k
R3
75

RP
8,4k

212
L P 2 100 Hz 63mH

3.6. Hy tnh thnh phn tng ng LS,RS ca cun dy c :LP =63Mh ; RP = 8,4k ( f
=100Hz).
Gii:
2
RP X P
2
7,056 10 7 ; X P LP
RS = 2
2 ;th: RP = 8,4k ; R P
X P RP
=>XP =2

100Hz 63mH =39,6

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O LNG IN
X 2P =1,57 10 3 ; X P2 R P2 =7,056

BI TP

107

RS =

8,4k 1,57 10 3
0,187 ;
7,056 10 7

XS =

7,056 10 7 39,6
39,6
7,056 10 7

LS =

XS
39,6
=
= 63mH
2 100 Hz

3.7. Hy tnh thnh phn tng ng CP ,RP ca t i n c RS =183,8 v CS =0,068f

(f=100Hz).
Gii:
Ta c: RP =( RS2 +XS2 )/RS ; RS2 = (183,8)2 =33,782 10 3
XS =1/2fCS = 1/(2.100Hz.0,68F) =23,405.103
2

X S =5,478.108
RP =( 33,78.103 +5,478 10 8 ) / 183 2,99M
XP =

R S2 X S2 33,78 10 3 5,478 10 8

=23,41.103
XS
23,405 10 3

CP = 1/(2.100Hz.23,41k)= 0,068F

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