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MEMS Pressure Sensor

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Market
2002: 3.4 billion units will be sold in 2002,
generating over US$ 17 billion(All Mems Devices).

Market forecasts : expect these devices to reach 10.4


billion units in 2006, delivering in excess of US$ 34
billion in revenue,

Source: "MEMS and MicroStructures Technology:


an Application and Market Evaluation, Second
Edition", from Venture Development Corporation
(VDC).
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TOP Ten Products
As for areas of opportunity, VDC's market attractiveness
index identifies the top 10 near term opportunities in the
MEMS / MST market:
Micro-fluidic biochips for medical diagnostics and drug discovery
Glucose micro-fluidic monitoring sensors
Tire pressure sensors
Hard disk drive heads
Consumer print heads for inkjet printers
Over the counter micro-fluidic testing devices for detecting medical
conditions
Large format print heads
Devices that enable advanced automotive functions
ABS accelerometers and gyroscopes
Automobile mass airflow sensors
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The Pressure Sensor
Silicon Cap Wafer

Silicon Substrate Silicon


Membrane
Glass Plate
for support

Fig.3. Cross section of a typical sensor die

Piezoresistors

Conductor Bonding pads


Pattern

Fig.5. TOP VIEW : Silicon Membrane wafer

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MEMS Pressure Sensor
These are based on the deflection of Silicon
Membrane.
Silicon Cap Wafer

Silicon Substrate Silicon


Membrane
Glass Plate
for support

Cross section of a typical sensor die

The sensing is of two types


Capacitive
Piezoresistive

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Fabrication
Bulk micro machining in single crystal silicon and
Surface micromachining in polysilicon.

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Pressure Sensor Range
vacuum,
Low pressure (0.02 to 0.1 Atm),
Medium pressure (0.25 to 10 Atm),
High pressure (60 to more than 500 Atm).

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Capacitive pressure sensors
high sensitivity
small dynamic range
because the gap between the capacitor plates must be very
small to obtain a large capacitance.
A thin silicon diaphragm is employed with a narrow
capacitive gap and a vacuum cavity for reference
pressure.
The silicon diaphragms have better mechanical
properties, including freedom from creep, resulting
in better repeatability than metal diaphragms.

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Use of a P++ (heavily doped boron) etch stop layer
provides accurate control of diaphragm thickness.

Structure of a capacitive absolute pressure sensor

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The sensor is formed from two glass substrates and a
silicon wafer.
The silicon wafer is sandwiched between the two glass
wafers by anodic bonding, simultaneously forming a
sealed reference cavity.
An alloy of Zn-V-Fe is used as a Non Evaporable
Getter (NEG) to maintain the reference cavity at high
vacuum. After bonding in vacuum, the NEG can
absorb the remaining gas in the reference cavity.

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Pressure range 0-100mTorr
Can be extended to about 500 mtorr.

1. A Ultra-Sensitive, High-Vacuum Absolute Capacitive Pressure Sensor;


Technical Digest of the 14th IEEE International Conference On Micro
Electro Mechanical Systems (MEMS 2001), pp. 166-169, Interlaken,
Switzerland, Jan. 21-25, 2001.
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Working of piezoresistive
sensor
The sensing material in a piezoresistive
pressure sensor is a diaphragm formed on a
silicon substrate, which bends with applied
pressure.
A deformation occurs in the crystal lattice of
the diaphragm because of that bending. The
membrane defection is typically less than 1 μm.
This deformation causes a change in the
resistivity of the material. This change can be
an increase or a decrease according to the
orientation of the resistors.

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Working of piezoresistive
sensor
The Piezoresistive sensor utilizes silicon strain gauges
configured as a Wheatstone bridge in which one or more legs
change value when strained.
The output normalized to input pressure is known as
sensitivity (mV/V/Pa), and is related to the piezoresistive
coefficients.
These sensors require an applied current and signal-
conditioning electronics for operation.
Due to the simple construction and their large output signal,
Piezoresistive sensors take a primacy within pressure sensors.
Now a days Piezoresistive pressure sensors are available for
different nominal pressure ranges from 10mbar up to 1000
bar and can therefore be used for different applications.
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piezoresistive silicon Pressure
Sensor
Mature processing technology.
Different pressure levels can be achieved according to
the application.
Also, various sensitivities can be obtained.
Read-out circuitry can be either on-chip or discrete
Low-cost

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Diaphragm
The pressure sensitive diaphragm is
formed by silicon back-end bulk
micromachining. The SEM (Scanning
Silicon diaphragms are formed by Electron Microscope)
Anisotropically etching the back of a view of the back-side of
silicon wafer. Usually a square one of the sensor
membrane can be formed by wet etching
in KOH or TMAH (TriMethyl
Ammonium Hydroide) solution. The
circular membranes can be obtained by
dry etch process. The silicon diaphragms
5-50 microns ±1 micron and area 1- 100
square mm.
The size and thickness of the finished
diaphragm depend on the pressure
range desired. diaphragm
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Typical Piezoresistive
Pressure
The diffused resistors
Sensor

Diffused resistors

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The piezoresistive elements (i.e., the diffused
resistors) are located on an n-type epitaxial layer of
typical thickness 2-10 micron. The epitaxial layer is
deposited on a p-type substrate.
The aluminum conductors join the semiconductor
resistors in a bridge configuration and are attached
to the bond pads for circuit interconnection.

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The resistors are placed on the
diaphragm such that two experience
mechanical tension in parallel and the
other two are perpendicular to the
direction of current flow.
Thus, the two pairs exhibit resistance
changes opposite to each other. These
pairs are located diagonally in the
bridge such that applied pressure
produces a bridge imbalance.
Deformation by applied pressure
causes high levels of mechanical tension
at the edges of the diaphragm. The pressure
Positioning the resistors in this area of
sensor chip
highest tension increases sensitivity.
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Alumina substrates are used for the packaging of the
sensor

The alumina substrate has a hole at Here the sensor is bonded on the
the middle. This is required for substrate .The wire bonding is
differential pressure measurements also done.
and the air pressure is always applied
to the back side of the sensor via this
hole. 
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The packed pressure sensor
A cap is made for the input pressure port.  The
electrical connections are covered with epoxy for
electrical isolation.

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The Wheat Stone Bridge
The stress is a direct
consequence of the
membrane deflecting in
response to an applied
pressure differential across
the front and backsides of the
sensor.
The membrane deflection is
a few microns. Fig.1. The wheat stone bridge
configuration.

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Piezoresistance
Resistance of Silicon is dependent on the changes in
length caused by stress.
Resistive changes are not isotropic, and can be
divided into two independent components, one
parallel to the direction of stress, and the other
perpendicular to it, in the form of:
Perpendicular and parallel
piezoresistive coefficients.

Perpendicular and parallel


components of stress

The coefficients are functions of temperature and doping


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Pressure Units Conversion
1 atmosphere
1.01295 bar
1.01295 x 106 dynes/cm2
29.9213 in. Hg
406.86 in. water
1.03325 kg/cm2
1.01295 x 105 Pa or N/m2
14.696 PSI or lb/in2
760 torr or mm Hg

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Typical Pressure sensor
Design Specification
Pressure Range : 12-18 psi(absolute)
Sensitivity = 2mV/V/psi (minimum)
Frequency Bandwidth: 25 kHz(minimum)
Pressure Resolution :0.001 psi
Maximum overpressure: 60 psi
Maximum surface undulation: 10 micron
Power and Ground Line current: 24 mA
Signal lines 1 mA
Accuracy: 0.01% FS
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The Pressure Sensor
The
Membrane analysis
Diaphragm Pressure Gauge uses the elastic
deformation of a diaphragm (i.e. membrane)
A typical Diaphragm pressure gauge has a
diaphragm One side of which is open to the external
targeted pressure, PExt, and the other side is
connected to a known pressure, PRef,. The pressure
difference, PExt - PRef, mechanically deflects the
diaphragm

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The pressure-loaded diaphragm can be considered as
a rectangular plate subjected to a uniformly
distributed loading.

Using plate theory: the deflection can be


converted to a pressure loading.
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Plate Theory
In general we are looking for a relationship of
the form: w(x,y)=F(p(x,y))

The governing differential equation for the


deflection of the rectangular plate can be written
as
This is the plates differential equation
D
It is a linear, 4th order, inhomogeneous, partial
differential equation.

w(x,y)= is the lateral deflection due to the


applied pressure P(x,y). P(x,y) can be taken as
uniformly distributed applied pressure P. Eh 3
D
The parameter D is the flexural rigidity of the 12(1  v 2 )
plate.
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Solution
A simple solution valid for small deflection is given
here. p min(a, b) 4
wmax  
Eh 3

Where  is
Max(a/b) 1.0 1.2 1.4 1.6 1.8 2.0      
  0.0138  0.0188  0.0226  0.0251  0.0267  0.0277  0.0284

Poissons Ratio = 0.3

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The maximum stress occurs at the centre of the
longer edges and is given as
p min(a, b) 2
 max 
h2
Where  is :
Max(a/b) 1.0 1.2 1.4 1.6 1.8 2.0      
  0.3078  0.3834  0.4356  0.4680  0.4872  0.4974  0.5000

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Solution
For a square diaphragm of side L :
Origin (0,0) is at the centre of the diaphragm

wmax  2x   2y 


w( x, y )  1  cos( L ) 1  cos( L )
4
4
pL
wmax  6(1   2 ) 4 3
 Eh
For silicon with E= 168Gpa, wmax (12 psi )  0.092 micron
v=0.064, and wmax (18 psi )  0.139 micron
L =140 micron and H = 5 wmax (60 psi )  0.465 micron
micron
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The Maximum Stress
6(1   2 )  L 
 max   p
 2
h

For silicon with E= 168GPa,  max (12 psi)  39.2MPa


v=0.064, and  max (18 psi)  58.8MPa
L =140 micron and H = 5  max (60 psi )  196MPa
micron

The value is much less than the Yield strength of Silicon :2800-
6800 MPa

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Maximum Stress
The stresses are proportional to pressure and to the
the square of the ratio L/ H where H is the thickness
of the membrane and L is the edge length.
The maximum stress developed in a square membrane of size
‘L’ and thickness ‘H’ at a pressure ‘P’ is given
approximately as
2
L
  0.3078 P 
H

For a pressure of 10MPa, A typical square diaphragm of 1000 micron


length and 50 micron thickness will have maximum stress of ~1231 MPa
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Maximum Membrane
Deflection
The maximum membrane deflection at the center of
the diaphragm is given as

3
L L
wmax  0.0138P  
EH

If the Young’s modulus of Silicon membrane is


E=190GPa, The maximum deflection is ~5.81 micron
For the previous example.

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Piezoresistive strain gauge
Piezoresistive effect is a material
L
property where the bulk
A
resistivity is influenced by the
mechanical stresses applied to the
L
material. R
A
the resistance:R dR d dA
 
L: length, A: area of cross section, R p A
ρ: resistivity dR d dL
  (1  2 )
R p L
dR d
   (1  2 )
R p
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dR d
   (1  2 )
R p
dR d
Straingauge K    (1  2 )
R   

Piezoresistive effect Geometry change

Semiconductor (Si, Ge) has


much larger gauge factor

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For a simple case resistivity is scalar; the electric field
and the current density are related as:

E  J
For a three dimensional Anisotropic crystal
 E1   1 6  5   J1 
E    2  4   J 2 
 2  6
 E3    5 4  3   J 3 
The resistivity tensor has 6 components
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General formulation: Including the piezoresistive
effects
E  (    ) J
Where
Ε electric field
ρ resistivity tensor
 piezoresistive tensor
[resistivity/stress]
σ stress tensor
J current density [current/area]
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For Si, Ge, there are only 3 independent
piezoresistive coefficients coefficients

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Piezoresistive coefficients
Piezoresistive coefficients depend strongly on doping
type and temperature. Typical values at room
temperature for Si and Ge are:

Coefficients decrease non-linearly with temperature.


For higher doping levels (> 1019 cm-3), temperature dependence
becomes smaller.
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For a long narrow resistor with axis along principal
axis of stress, The relative resistance change can be
expressed as

•The general expressions


for πl and πt are :

•Where (l1, m1, n1) and (l2, m2, n2) are the sets of direction cosines between
the longitudinal resistor direction (subscript 1) and the crystal axis, and
between the transverse resistor direction (subscript 2) and the crystal axis
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πl and πt in [110] direction
in case of (100) silicon
wafer are :

Piezoresistance coefficients
πl and πt in (100) silicon for
[110] direction(in 10-11
GPa-1)

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Strain Gauge
The strain gauge can be used in different geometries
for measuring pressure.

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Piezoresistive Pressure Sensor
All piezoresistors are aligned with 110 directions i.e.
along an axis of the principal stress

Longitudinal stress can be considered as


one of the principal stress along (110)
direction  l  1
Longitudinal and transverse stresses are
related via the Poisson Ratio.
 l   t
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If we define
R1  R3  (1  1 ) R0 and
R 2  R4  (1   2 ) R0

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Piezoresistive
Where pressure Sensor
1  67.6 X 10  l 11

 2  61.7 X 10  l 11

 l in Pa.
Vo R1 R3  R2 R4 (1  1 )  (1   2 )
2 2
 
Vs  R1  R2  R3  R4  ( 2  1   2 ) 2
Vo 1   2 1   2
   64.65 X 10  l
11

Vs 2(1  1   2 ) 2
Since 1 ,  2 are very small.
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 max (12 psi )  39.2MPa
For silicon with E= 168GPa,
 max (18 psi )  58.8MPa
v=0.064, and
 max (20 psi)  65.33MPa
L =140 micron and
 max (60 psi)  196MPa
H = 5 micron
Vo
 64.65 X 10  l
11

Vs
For 1 psi
Vo
 2.11 X 10 3 per psi.
Vs
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Resistor specification:
1 mA current: 5 V source :The resistor should be about 5
Kohms.
L
Electrical Resistivity: 0.84 Ohm cm R
A
L= 30 micron W= 2 micron t = .25 micron

Pressure Resolution: 0.001 psi


Sensitivity = 2mV per volt per psi :
5 V source : 10 mV per psi = 10 microvolt per 0.001 psi.
An instrumentation amplifier INA166UA with a gain of 2000
and bandwidth of 450 kHz may be employed for the
amplificationof the signal.
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The pressure sensor
membrane
The structure of the pressure sensor can be designed
in the MEMSPRO and analyzed using ANSYS .
Preliminary simulation of pressure sensor membrane
have been performed using ANSYS software.
These simulation have also been performed for a
typical pressure sensor geometry.

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The membrane:Meshed
Structure

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The deflection analysis
Maximum Deflection: 5.9 micron

Maximum Deflection: 5.9 micron


In Meters

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Stress Analysis

Maximum Stress:1030 MPa


In Pa
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The pressure sensor Model
in MEMSPRO

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Meshed Model

Meshed in Hypermesh 5.0


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The deflection analysis

Maximum Deflection:3.5 micron


In micron

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Stress analysis

Maximum Stress: 424 MPa


In MPa

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The Schematic of
Piezoresistive Pressure sensor

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Voltage Sensitivity Simulation

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The ¼ th model of the pressure sensor can also be
made in ANSYS and simulation can be performed
without much error.
Use Orthotropic model :SOLID45
The structure is made as sum of three solids with
origin at (00) Two corners(x,y,z)
The membrane 2 micron thick.
Solid1: (0, 0, 18) (100,100,20)
Other parts:
Solid2: (0,70,0) and (70,100,18)
Solid3: (70,0,0) and (70,70,18)
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Material Parameter
Youngs Modulus:
Ex= 169.5 Gpa
Ex= 169.5 Gpa
Ex= 169.5 Gpa
Poisson’s Ratio:
Vxy= vyx=0.0551
Vyz= vzy =0.3559
Vzx=vxz =0.2730
Shear Modulus
Gxy= 80.32 Gpa
Gyz= 62.50GPa
Gzx= 51.06 GPa
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The 5 micron top layer containing membrane is meshed as
50X50X10(element size being2X2X0.2 micron) and
Other parts as 50X15X9 and 35X15X9( Element size being
2X2X2 micron)

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¼ Model

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Meshed Model

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Full Model:TOP View

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Full Model Bottom View

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Deflection

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Stress Sx

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Stress Sy

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Stress Sz

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Stress S1

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Stress S2

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Stress S3

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Von Mises Stress

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The stress values are obtained along the central line
and the region of maximum stress is obtained by
taking the average of the stresses on all the nodes
intended for the resistors.
In the present example the resistor may be placed 18
microns from the edge to 48 microns.between 24357
and 24342 nodes.
However to maximize the stress and voltage
sensitivity its advisable to split the resistor into two
parts and place between24347 and 24353. The
average is 19.8 MPa
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THE FOLLOWING X,Y,Z VALUES ARE IN GLOBAL COORDINATES

NODE SX SY SZ SXY SYZ SXZ


24317 -13.538 -13.698 -0.13369 1.59E-02 5.15E-03 7.67E-03
24318 -13.49 -13.642 -0.13368 3.18E-02 5.12E-03 1.54E-02
24319 -13.408 -13.55 -0.13366 4.75E-02 5.08E-03 2.31E-02
24320 -13.293 -13.42 -0.13362 6.31E-02 5.02E-03 3.09E-02
24321 -13.142 -13.255 -0.13358 7.85E-02 4.94E-03 3.89E-02
24322 -12.955 -13.053 -0.13353 9.36E-02 4.84E-03 4.70E-02
24323 -12.73 -12.816 -0.13347 0.10839 4.72E-03 5.52E-02
24324 -12.464 -12.545 -0.1334 0.1228 4.59E-03 6.36E-02
24325 -12.154 -12.239 -0.13332 0.13677 4.44E-03 7.22E-02
24326 -11.799 -11.901 -0.13322 0.15023 4.27E-03 8.11E-02
24327 -11.394 -11.531 -0.13312 0.16312 4.08E-03 9.02E-02
24328 -10.936 -11.131 -0.133 0.17537 3.87E-03 9.97E-02
24329 -10.421 -10.701 -0.13287 0.18691 3.65E-03 0.10942
24330 -9.8435 -10.243 -0.13272 0.19766 3.40E-03 0.11952
24331 -9.2001 -9.7589 -0.13256 0.20754 3.13E-03 0.12999
24332 -8.4849 -9.2505 -0.13238 0.21647 2.85E-03 0.14086
24333 -7.6923 -8.7196 -0.13219 0.22437 2.54E-03 0.15216
24334 -6.8164 -8.1684 -0.13197 0.23113 2.21E-03 0.16391
24335 -5.8506 -7.5993 -0.13174 0.23667 1.87E-03 0.17614
24336 -4.788 -7.0147 -0.13149 0.24088 1.50E-03 0.18888
24337 -3.6212 -6.4174 -0.13122 0.24366 1.10E-03 0.20214
24338 -2.3425 -5.8104 -0.13093 0.24489 6.89E-04 0.21597
24339 -0.94361 -5.1968 -0.13061 0.24446 2.52E-04 0.23038
24340 0.58426 -4.5801 -0.13028 0.24225 -2.07E-04 0.2454
24341 2.2503 -3.9639 -0.1299 0.23813 -6.90E-04 0.26105
24342 4.0642 -3.3523 -0.12954 0.23197 -1.20E-03 0.27736
24343 6.0363 -2.7492 -0.12907 0.22366 -1.72E-03 0.29439
24344 8.1769 -2.1594 -0.12876 0.21304 -2.27E-03 0.31204
24345 10.496 -1.5876 -0.12838 0.2 -2.85E-03 0.33017
24346 13.003 -1.0386 -0.12766 0.1844 -3.44E-03 0.3491
24347 15.732 -0.51535 -0.12319 0.16615 -4.04E-03 0.37349
24348 18.767 -1.99E-02 -0.11726 1.45E-01 -4.68E-03 0.40995
24349 22.113 0.42942 -0.14577 0.12144 -5.37E-03 0.42598
24350 24.81 0.74101 -0.30298 9.55E-02 -6.00E-03 0.23122
24351 24.316 0.82744 -0.43241 6.94E-02 -5.79E-03 -0.30819
24352 19.529 0.75046 -0.20375 4.73E-02 -4.18E-03 -0.73036
24353 13.177 0.52635 -3.77E-02 3.17E-02 -2.41E-03 -0.68281
24354 8.2251 0.29812 -3.56E-02 2.19E-02 -1.31E-03 -0.44727
24355 5.1752 0.14592 -7.68E-02 1.59E-02 -7.62E-04 -0.26299
24356 3.3907 5.99E-02 -0.10452 1.19E-02 -4.81E-04 -0.15818
24357 2.2998 1.10E-02 -0.1192 9.22E-03 -3.23E-04 -0.10097
24358 1.5888 -1.86E-02 -0.12668 7.29E-03 -2.26E-04 -6.84E-02
24359 1.0974 -3.82E-02 -0.13087 5.87E-03 -1.61E-04 -4.86E-02
24360 0.74129 -5.23E-02 -0.13316 4.79E-03 -1.17E-04 -3.60E-02
24361 0.47409 -6.34E-02 -0.13442 3.95E-03 -8.53E-05 -2.73E-02
24362 0.27133 -7.27E-02 -0.13496 3.26E-03 -6.50E-05 -2.06E-02
24363 0.12238 -8.09E-02 -0.13497 2.64E-03 -5.60E-05 -1.44E-02
24364 2.86E-02 -8.81E-02 -0.13442 2.00E-03 -6.16E-05 -7.60E-03
24365 -6.53E-03 -9.53E-02 -0.13533 1.19E-03 -1.03E-04 -1.06E-03

MINIMUM VALUES
NODE 24317 24317 24351 24365 24350 24352
VALUE -13.538 -13.698 -0.43241 0.11870E-02-0.60028E-02-0.73036

MAXIMUM VALUES
NODE 24350 24351 24354 24338 24317 24349
VALUE 24.810 0.82744 -0.35618E-01 0.24489 0.51470E-02 0.42598

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THE FOLLOWING X,Y,Z VALUES ARE IN GLOBAL COORDINATES

NODE SX SY SZ SXY SYZ SXZ


24341 2.2503 -3.9639 -0.1299 0.23813 -6.90E-04 0.26105
24342 4.0642 -3.3523 -0.12954 0.23197 -1.20E-03 0.27736
24343 6.0363 -2.7492 -0.12907 0.22366 -1.72E-03 0.29439
24344 8.1769 -2.1594 -0.12876 0.21304 -2.27E-03 0.31204
24345 10.496 -1.5876 -0.12838 0.2 -2.85E-03 0.33017
24346 13.003 -1.0386 -0.12766 0.1844 -3.44E-03 0.3491
24347 15.732 -0.51535 -0.12319 0.16615 -4.04E-03 0.37349
24348 18.767 -1.99E-02 -0.11726 1.45E-01 -4.68E-03 0.40995
24349 22.113 0.42942 -0.14577 0.12144 -5.37E-03 0.42598
24350 24.81 0.74101 -0.30298 9.55E-02 -6.00E-03 0.23122
24351 24.316 0.82744 -0.43241 6.94E-02 -5.79E-03 -0.30819
24352 19.529 0.75046 -0.20375 4.73E-02 -4.18E-03 -0.73036
24353 13.177 0.52635 -3.77E-02 3.17E-02 -2.41E-03 -0.68281
24354 8.2251 0.29812 -3.56E-02 2.19E-02 -1.31E-03 -0.44727
24355 5.1752 0.14592 -7.68E-02 1.59E-02 -7.62E-04 -0.26299
24356 3.3907 5.99E-02 -0.10452 1.19E-02 -4.81E-04 -0.15818
24357 2.2998 1.10E-02 -0.1192 9.22E-03 -3.23E-04 -0.10097
24358 1.5888 -1.86E-02 -0.12668 7.29E-03 -2.26E-04 -6.84E-02
24359 1.0974 -3.82E-02 -0.13087 5.87E-03 -1.61E-04 -4.86E-02
24360 0.74129 -5.23E-02 -0.13316 4.79E-03 -1.17E-04 -3.60E-02
24361 0.47409 -6.34E-02 -0.13442 3.95E-03 -8.53E-05 -2.73E-02
24362 0.27133 -7.27E-02 -0.13496 3.26E-03 -6.50E-05 -2.06E-02
24363 0.12238 -8.09E-02 -0.13497 2.64E-03 -5.60E-05 -1.44E-02
24364 2.86E-02 -8.81E-02 -0.13442 2.00E-03 -6.16E-05 -7.60E-03
24365 -6.53E-03 -9.53E-02 -0.13533 1.19E-03 -1.03E-04 -1.06E-03
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1  67.6 X 10 11 l  67.6X10 11 X 19.8 X 106  13.38 X 10 5
 2  61.7 X 10  l  61.7 X 10
11 11
X 24.56 X 10  15.18 X 10
6 5

 l in Pa.

Vo 3 mV 3 mV
 14.28 X 10  0.704 X 10
Vs V V . psi
This does not give the desired sensitivity. The
sensitivity can be incresed by decreasing the
membrane thickness. A 2 micron membrane gives the
desired sensitivity.The maximum stress being 181.14
Mpa
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2 Micron Membrane
Deflection

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2 micronMembrane Stress

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Voltage Sensitivity
1  12245 X 10 5
 2  11176 X 10 5
Vo 3 mV 3 mV
 117 .05 X 10  5.85 X 10
Vs V V . psi

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Resistor Arrangement
Low pressure Geometry High pressure Geometry

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Thank you

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Applications of Piezoresistor
sensors
Blood pressure measurements

Monitoring the suction and brake pressure in


automobiles.

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SUMMARY
Si is one of the most important piezoresistive
material.
The piezoresistive sensors can be used fro
measurement of hydrostatic as well as differential
pressure.
Piezoresistive materials are very useful as pressure
sensor.

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The temperature sensor
Platinum Resistance thermometer:
The resistance at low temperatures below 0C can be
expressed as a third order polynomial

For the range 0 to 850°C, It can be expressed as a


second-order polynomial
The coefficients are as follows:
Ro : nominal value or nominal resistance

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Temperature Coefficient
The mean temperature coefficient between 0 °C and
100 °C is defined as

The typical value for a Pt100 thermometer is


0.00385055 per °C.

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The Temperature sensor
Two wire or Four wire measurement
Wheatstone bridge arrangement
The temperature sensing resistor may be placed on a
ceramic substrate.

Platinum
electrodes Platinum
resistor

Fig.7. Bottom View: The Alumina substrate


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Conductivity Sensor
The conductivity measuring cell
Usually formed by two 1-cm square surfaces spaced 1-cm
apart.
It is required to scale down the cell dimensions for
microsensor.
The conductivity sensor is a four electrode cell with
platinum electrodes.
The conductivity of a solution with a specific
electrolyte concentration will change with change in
temperature.

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Conductivity Sensor
Temperature compensated conductivity:
Conductivity at the reference temperature( 20oC or 25oC).
A useful algorithm for temperature correction is:
C(T) = C(25) [1 + 0.021 (T - 25)]
Where
C(T) is the measured conductivity of a solution at sample
temperature T in oC and
C(25) is the conductivity of the solution at 25oC

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Signal conditioning circuits
Pressure sensor
Temperature sensor
Conductivity measurement
Temperature compensation
The required signal conditioning electronics may be
placed over the ceramic substrate.

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The Sensor
The sensor die is bonded to the alumina substrate
and packaged.
The electrodes for conductivity measurement and the
platinum resistors are deposited on the alumina
substrate.
The contacts are brought on top through thruhole
plating.
The Bottom side will be in contact with water
whereas the topside will contain the electrical
contacts.

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The Design
The design involves:
Designing
a suitable package for the device
the signal conditioning circuit
the pressure sensor membrane geometry:
Maximizing the sensitivity by optimizing the
membrane dimensions.
The resistor geometry for the temperature measurement.
The conductivity cell/ electrodes geometry.

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