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Piezoresistors
Diffused resistors
The alumina substrate has a hole at Here the sensor is bonded on the
the middle. This is required for substrate .The wire bonding is
differential pressure measurements also done.
and the air pressure is always applied
to the back side of the sensor via this
hole.
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The packed pressure sensor
A cap is made for the input pressure port. The
electrical connections are covered with epoxy for
electrical isolation.
Where is
Max(a/b) 1.0 1.2 1.4 1.6 1.8 2.0
0.0138 0.0188 0.0226 0.0251 0.0267 0.0277 0.0284
The value is much less than the Yield strength of Silicon :2800-
6800 MPa
3
L L
wmax 0.0138P
EH
E J
For a three dimensional Anisotropic crystal
E1 1 6 5 J1
E 2 4 J 2
2 6
E3 5 4 3 J 3
The resistivity tensor has 6 components
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General formulation: Including the piezoresistive
effects
E ( ) J
Where
Ε electric field
ρ resistivity tensor
piezoresistive tensor
[resistivity/stress]
σ stress tensor
J current density [current/area]
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For Si, Ge, there are only 3 independent
piezoresistive coefficients coefficients
•Where (l1, m1, n1) and (l2, m2, n2) are the sets of direction cosines between
the longitudinal resistor direction (subscript 1) and the crystal axis, and
between the transverse resistor direction (subscript 2) and the crystal axis
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πl and πt in [110] direction
in case of (100) silicon
wafer are :
Piezoresistance coefficients
πl and πt in (100) silicon for
[110] direction(in 10-11
GPa-1)
2 61.7 X 10 l 11
l in Pa.
Vo R1 R3 R2 R4 (1 1 ) (1 2 )
2 2
Vs R1 R2 R3 R4 ( 2 1 2 ) 2
Vo 1 2 1 2
64.65 X 10 l
11
Vs 2(1 1 2 ) 2
Since 1 , 2 are very small.
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max (12 psi ) 39.2MPa
For silicon with E= 168GPa,
max (18 psi ) 58.8MPa
v=0.064, and
max (20 psi) 65.33MPa
L =140 micron and
max (60 psi) 196MPa
H = 5 micron
Vo
64.65 X 10 l
11
Vs
For 1 psi
Vo
2.11 X 10 3 per psi.
Vs
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Resistor specification:
1 mA current: 5 V source :The resistor should be about 5
Kohms.
L
Electrical Resistivity: 0.84 Ohm cm R
A
L= 30 micron W= 2 micron t = .25 micron
MINIMUM VALUES
NODE 24317 24317 24351 24365 24350 24352
VALUE -13.538 -13.698 -0.43241 0.11870E-02-0.60028E-02-0.73036
MAXIMUM VALUES
NODE 24350 24351 24354 24338 24317 24349
VALUE 24.810 0.82744 -0.35618E-01 0.24489 0.51470E-02 0.42598
l in Pa.
Vo 3 mV 3 mV
14.28 X 10 0.704 X 10
Vs V V . psi
This does not give the desired sensitivity. The
sensitivity can be incresed by decreasing the
membrane thickness. A 2 micron membrane gives the
desired sensitivity.The maximum stress being 181.14
Mpa
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2 Micron Membrane
Deflection
Platinum
electrodes Platinum
resistor