MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD30HVF1
DRAWING
22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1

RoHS Compliance, DESCRIPTION

RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Silicon MOSFET Power Transistor,175MHz,30W

OUTLINE

High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.

2 3

R1.6

14.0+/-0.4

6.6+/-0.3

FEATURES

APPLICATION
For output stage of high power amplifiers in VHF band Mobile radio sets.

2.3+/-0.3

2.8+/-0.3 0.10

3.0+/-0.4

5.1+/-0.5

PIN 1.Drain 2.Source 3.Gate UNIT:mm

RoHS COMPLIANT
RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter G after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 75 2.5 7 175 -40 to +175 2.0 UNIT V V W
W A C C C/W

Note 1: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS
SYMBOL IDSS IGSS VTH Pout D PARAMETER

(Tc=25C, UNLESS OTHERWISE NOTED)

CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.3 30 55 LIMITS TYP MAX. 130 1 1.8 2.3 35 60 No destroy UNIT uA uA V W % -

Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance

Note : Above parameters , ratings , limits and conditions are subject to change.

RD30HVF1

MITSUBISHI ELECTRIC
1/8

10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance,

Silicon MOSFET Power Transistor,175MHz,30W

TYPICAL CHARACTERISTICS

RD30HVF1

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MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V

RoHS Compliance,
100 CHANNEL DISSIPATION Pch(W) 80 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE

Silicon MOSFET Power Transistor,175MHz,30W

40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)

Ids(A)

60

2 3 Vgs(V)

Vds-Ids CHARACTERISTICS 10
Ta=+25C Vgs=5.5V

Vds VS. Ciss CHARACTERISTICS 200 180 160 140 120 100 80 60 40 20 0 0
Ta=+25C f=1MHz

8 6 4 2 0 0 2 4 6 Vds(V) 8 10

Vgs=5V Vgs=4.5V Vgs=4V

Vgs=3.5V Vgs=3V

Ciss(pF)

Ids(A)

10 Vds(V)

15

20

Vds VS. Coss CHARACTERISTICS 140 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 4 0 Crss(pF) 12 8
Ta=+25C f=1MHz

Vds VS. Crss CHARACTERISTICS 20 16

Ta=+25C f=1MHz

10 Vds(V)

15

20

TYPICAL CHARACTERISTICS
RD30HVF1

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1
Pin-Po CHARACTERISTICS 50 100
Po

RoHS Compliance,
Pin-Po CHARACTERISTICS
Ta=+25C f=175MHz Vdd=12.5V Idq=0.5A

Silicon MOSFET Power Transistor,175MHz,30W

50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 0 0

Po

100 40 80

80 60
Ta=25C f=175MHz Vdd=12.5V Idq=0.5A Idd

Pout(W) , Idd(A)

Gp

d(%)

40 20 0 10 20 Pin(dBm) 30

20 10 0 0 0.5 1 1.5 Pin(W)

40 20 0 2.5

Vdd-Po CHARACTERISTICS 80
Ta=25C f=175MHz Pin=1.0W Idq=0.5A Zg=ZI=50 ohm Po

Vgs-Ids CHARACTERISTICS 2 16 14 12 10 Idd(A) Ids(A) 8

Idd

8 Vds=10V Tc=-25~+75C 6 +75C 4 -25C

+25C

60

Po(W)

40

6 4 2 2

20

0 4 6 8 10 Vdd(V) 12 14

0 2 3 Vgs(V) 4 5

TEST CIRCUIT(f=175MHz)

RD30HVF1

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10 Jan 2006

d(%)

60

30

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1
Vdd L1 C3

RoHS Compliance,
Vgg C1

Silicon MOSFET Power Transistor,175MHz,30W

9.1kOHM 100OHM L2

8.2kOHM

L1 RF-in 56pF 100pF 100pF

10pF 175MHz RD30HVF1

C2

RF-OUT 56pF 8pF

33pF100pF 27 32 34 51 90 100

12 10 32

43pF 5pF 50pF

8 4.8

44 54 90 100 Note:Board material-Teflon substrate

10.8

C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

RD30HVF1

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1
Zo=10

RoHS Compliance,
f=175MHz Zout

Silicon MOSFET Power Transistor,175MHz,30W

f=146MHz Zout f=135MHz Zout

f=175MHz Zin

f=135MHz Zin

f=146MHz Zin

Zin , Zout f (MHz) 135 146 175 Zin (ohm) 0.71-j7.67 0.94-j6.46 0.53-j5.34 Zout (ohm) 1.72-j0.86 2.12-j0.78 1.87-j0.70 Conditions Po=40W, Vdd=12.5V,Pin=1.0W Po=38W, Vdd=12.5V,Pin=1.0W Po=35W, Vdd=12.5V,Pin=1.0W

RD30HVF1

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10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1
S12 S22 (ang) -11.6 -18.8 -22.2 -24.2 -26.2 -27.0 -24.4 -18.5 -8.2 8.0 21.6 35.6 45.7 53.5 58.4 61.6 60.7 61.5 63.1 65.6 62.3 (mag) 0.687 0.723 0.740 0.760 0.806 0.825 0.853 0.879 0.887 0.902 0.914 0.918 0.928 0.933 0.936 0.943 0.947 0.947 0.953 0.955 0.958 (ang) -166.3 -168.8 -169.6 -170.5 -172.5 -174.8 -177.1 -179.4 178.4 176.1 174.1 172.2 170.2 168.4 166.6 164.8 163.3 161.7 159.9 158.7 155.5 (mag) 0.015 0.014 0.013 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.005 0.005 0.005 0.007 0.007 0.008 0.009 0.011 0.011 0.013 0.015

RoHS Compliance,
Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1100 S11 (mag) 0.867 0.879 0.885 0.888 0.905 0.915 0.926 0.933 0.936 0.945 0.950 0.951 0.954 0.957 0.962 0.963 0.963 0.963 0.962 0.964 0.966 (ang) -172.4 -176.3 -177.5 -179.1 178.5 176.2 174.1 171.8 169.5 167.6 165.6 163.6 161.7 159.9 158.2 156.5 154.8 153.2 151.6 150.1 146.9 (mag) 8.747 5.523 4.571 3.852 2.877 2.202 1.754 1.422 1.167 0.985 0.842 0.725 0.635 0.559 0.495 0.449 0.407 0.366 0.337 0.315 0.275

Silicon MOSFET Power Transistor,175MHz,30W

S21 (ang) 72.7 61.2 56.4 52.4 44.1 37.1 31.4 25.8 20.9 17.2 13.3 9.8 7.2 3.7 1.3 -0.5 -3.8 -5.2 -6.6 -9.9 -12.1

RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)

RD30HVF1

MITSUBISHI ELECTRIC
7/8

10 Jan 2006

MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RD30HVF1

RoHS Compliance,

Silicon MOSFET Power Transistor,175MHz,30W

Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

RD30HVF1

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10 Jan 2006