Professional Documents
Culture Documents
b. Cu to
- Tr dy qun v tr cu ch dng dy kim loi nm trong v thch cao. Tr than gm bt than v ph gia p li. - hai u in tr c gim ni mch v trn n c cc vch mu ch th s Ohm.
3.Cch c gi tr in tr
Gi tr in tr c ghi trc tip trn in tr hoc c sn bng vch mu hoc chm mu( vch mu ph bin hn chm mu). Bng vch mu, ( chm mu cung tng t)
vch Mu sc
1 0 1 2 3 4 5 6 7 8 9 -
2 0 1 2 3 4 5 6 7 8 9 -
3 x10^0 x10^1 x10^2 x10^3 x10^4 x10^5 x10^6 x10^7 x10^8 x10^9 -
4 5% 10%
- Vch mu 1 v 2 ch trc tip hai s u tin ca tr s. - Vch mu 3 ch s s khng theo sau hai s u. - Vch mu 4 l sai s ca gi tr in tr.
V d:
4. in tr trn thc t
a. Dng in tr
b. K hiu
5.Trit p v quang tr
a. Trit p
b . Quang tr
-Cun dy c kh nng t cm ng. - Linh kin tch tr nng lng di dng t trng.
b. Cu to
c. K hiu
2.Bin p
a.Khi nim - L linh kin dng tng hoc gim in th AC. - Ch s dng vi in th xoay chiu. b. Cu to Gm hai cun dy qun trn mt li st - Cun a in AC vo la cun s cp - Cun ly in AC ra dng l cun th cp
c. H s bin p - in th AC ra cun th cp ty thuc vo t s ca s vng dy th cp i vi s cp: k =S vng dy th cp/ S vng dy s cp + k>1: Bin p tng th( vo thp, ra cao) + k<1:Bin th gim th( vo cao ,ra thp) d. Mt s bin th thng dng
1.3. T in
1. Khi nim - Dng cn tr v phng np khi cn thit - T in ch cho dng AC qua, cn tr dng DC. 2. Cu to - Gm hai bn cc t song song, gia c mt lp cch in( in mi). - Cht in mi nh hng ti tnh cht phn cc ca t.
K hiu
- T khng phn cc:
- T phn cc
3.Tham s c bn ca t
a. in dung - Ch kh nng tch tr in tch ca t khi t ln hai in cc ca t in th 1V. - Gi tr in dung c ghi r trn t. - n v: Fara (F) b. bn in - Ch kh nng ca t chu tc dng ca in p xoay chiu
4.Mt s t ph bin
a. T ha - Cht in mi trong t ha l mt hp cht ha hc( thng l Al2O3 , Ta2O5) - T ha phn cc v lun c hnh tr. - Gi tr c ghi trc tip trn thn t Vd:Trn thn t ghi 185uF320V c ngha: in dung ca t l 185uF, gi tr in p cc i a vo t 320V. - c im: + C ln nht, kch thc, th tch nh, gi thnh r. + Dng r ln, C ph thuc nhiu vo nhit , tn s.
b.T s
- Cht in mi trong t s l vt liu s. - T khng phn cc, thng c hnh tr - Gi tr c ghi trc tip trn thn t Vd: 474K220V = gi tr in dung ca t 47*10^4, in p cc i t vo t l 220V -Tnh n nh cao, khng ht m, in dung t thay i theo nhit , tn s.Tuy nhin kch thc ln, gi tr in dung 1pF- 0.15microF
c. T xoay - L t in hnh trong nhm t bin i - Cht in mi l chn khng( hoc cc cht kh khc), mica, thch anh, cht do tng hp,du.
- Khi chu kch thch bi 1 in trng th b bin dng sinh ra dao ng c hc ngc li khi chu kch thch dao ng c hc th sinh ra in trng ( chnh l hiu ng p in). - K hiu:
- Lq
,Cq :ph thuc vo kch thc hnh hc ca thch anh cch ct khi thch anh. - rq :tn hao ca ming thch anh. - Cp :in dung gi (C ca hai ming kim loi hoc bao gm c C tp tn ca mch ngoi). Do tnh n nh ca Cp km.
2. Rle
a. Khi nim - Rle la mt loai thit bi in t ng ma tin hiu u ra thay i nhay cp khi tin hiu u vao at nhng gia tri xac inh. - Rle la thit bi in dung ong ct mach in iu khin, bao v va iu khin s lam vic cua mach in ng lc.
- in p
- Dung lng
4.Nam chm
a.Khi nim
- L cc vt c kh nng ht v y vt bng st
hay thp non. - Trong t hc, nam chm l mt vt c kh nng sinh mt lc dng ht hay y mt t vt hay mt vt c cm t cao khi nm gn nam chm. - Lc pht sinh t nam chm gi l t lc.
b.Cu to:
- Nam chm l mt ngun t c hai cc: Bc v
Nam. - Mt t trng to t cc ng t (ng sc) i t cc Bc n cc Nam. c. Phn loi C 2 loi nam chm: Nam chm in Nam chm vnh cu
- L cc nguyn t thuc phn nhm 4 bng HTTH: Ge, Si. b. ng dng - Ch to cc linh kin in t bn dn, cc phn t nhit trong cc thit b lnh, cc my pht.
+P N n=1
n=2
n=3
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Cu to bn dn thun
Si
Si
Si
Si
Si
Si Si Si
+
Si
Si
Si
Si
Si
Si
Si
Sinh to cp in t t do - l trng
2. Cht bn dn loi N
- Nu ta thm vo Ge mt lng nh cht c v tr phn nhm 5 trong bng HTTH, v d nh Photpho(P) c 5 in t ha tr. - Khi 4 in t ca P s lin kt vi 4 in t Ge, P tha mt in t, tr thnh in t t do nn dn in.
Si
Si
Si
Si
Si
eSi Si P Si Si
Si
Si
Si
Si
Si
3. Cht bn dn loi P
Nu a vo bn dn thun cc nguyn t thuc nhm 3 trong bng HTTH, v d nh In, Al, B c 3 in t ha tr . B khi kt hp vi Ge s to ra mt l trng trong mi lin kt v xem nh in tch dng v cc in t ln cn d n ti kt vi l trng ca B v li mt l trng mi v hin tng trn c tip din: dn in bng l trng.
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Si
Etx
+ + -------------------
++++++++ ++++++++
- Sau khi cc in t khuch tn sang bn dn P li lp Ion dng cht cho (donor) gn b mt tip xc bn bn dn N. Tng t, sau khi l trng khuch tn sang bn dn N, chng li lp Ion m cht nhn (acxeptor) gn b mt tip xc bn bn dn P. - Qu trnh ny xy ra lin tc. Khi t trng thi cn bng, hai bn mt tip xc hnh thnh 2 min in tch tri du
2. Khng phn cc
Khi cha c tc ng ca trng ngoi, h thng tip xc cn bng ng v khng c dng in qua n - Cc Ion dng bn n v cc Ion m bn p to nn mt in trng cc b Etx hng t n sang p cn bng gia dng in khuch tn( ca cc ht dn a s) do chnh lch nng v dng gia tc( ca cc ht dn thiu s) do in trng ni b Etx gia tc.
EV
Vi st p cc vng trung ho v tip gip kim loi bn dn khng ng k, in p V s to ra in trng ch yu t vo vng in tch khng gian c chiu ngc li vi in trng tip xc nu c phn cc thun, nn s lm suy gim in trng tip xc mt cch hiu qu. in th tip xc s gim xung. Khi phn cc thun: th tip xc gim, tc E gim nn s lm cho rng vng ngho hp li.
b. Phn cc ngc
Nu o ngc ngun p th gi l phn cc nghch (V < 0). i vi trng hp phn cc ngc hiu th tip xc s tng ln. Khi phn cc ngc: th tip xc tng ln, tc E tng nn s lm cho rng vng ngho tng ln.
E TX +++ +++ - - - -- + + + - -- -- + + +
EV
Vz
U
Is
Khi ni P-N c phn cc thun, l trng c khuch tn t vng P sang vng N v in t khuch tn t vng N sang vng P. S phn b cc ht ti in thiu s hai bn vng him to nn mt in dung gi l in dung khuch tn.
2. in tr
Ni tr tnh l in tr ni ca ni P-N trong mch in mt chiu. Ngi ta nh ngha in tr mt chiu mt im phn cc l t s V/I im . Khi ni P-N phn cc thun cng mnh, dng in I cng ln trong lc in th V gn nh i nn ni tr cng nh.
Gi s dng dng in ngang qua ni P-N l IQ tng ng vi mt in th phn cc thun mt lng V t tr s VQ th I cng bin thin mt lng tng ng I t tr s IQ. T s: I / V =1/rd, rd: in tr ng ca khi ni p-n.
Anot
K hiu:
Anot
Katot
2. c tuyn V/A
0.7
2. c tuyn V/A
I
Un
U
I n
Imax
3. ng dng n p
2. c tuyn V/A
I
Imax Imin 0 1 3 2 Uth
3. Diot ngc
Nhng diot c nng tp cht nh hn nng ca diot Tunen mt cht th on 12 gn nh nm ngang, nhng diot gi l diot ngc. Loi diot ny cho dng ngc ln i qua, cn dng thun nh b kha li.
b. Diot ngc
- S dng tch sng iu tn, trng tn, iu ch gi sng siu cao tn.
R U C
Ci L
B1 E
P
B2 Cu to UJT knh n
2. K hiu
B2 E B1 Loi knh n E B2 B1
Loi knh p
3. Nguyn l lm vic
IE RE V EE VBB R B1 R B2 V BB
IE RE V EE
Trong s tng ng, it c thay th cho tip xc P-N; R B1 l in tr ca phn bn dn nn 1; R B2 l in tr ca phn bn dn nn 2. Khi cha p VEE vo cc pht E (cc pht E h) thi bn dn l mt in tr vi ngun in th VBB, c k hiu RBB v gi l in tr lin nn (thng c tr s t 4 K - 10K).
Cp ngun V EE vo cc pht v cc nn B1 - Khi V EE=0V : Diot c phn cc nghch v ta ch c mt dng in r nh chy ra t cc pht. - Tng V EE ln dn, dng in I E bt u tng theo chiu dng. Khi V E=VP, ni P-N phn cc thun. Kt qu l lc dng IE tng v in th VE gim. Ta c mt vng in tr m (in tr vng p- in tr t chn E).
Kt lun:
Khi in p t ln cc pht phi bng hoc ln hn gi tr in p nh (UP) th UJT mi dn in, nhng st p trn n gim v c tuyn Vn-Ampe c on in tr m. in p nh U P = U BB +0,7V; trong l h s thun khit, UBB l in p gia Nn2 v Nn1. Khi dng in t n gi tr IV dng in trng th st p trn UJT gim n tr s in p trng UV. T gi tr ny UJT chuyn sang vng in tr dng ca c tuyn. Ngi ta s dng on in tr m lp cc mch to xung phng np.
3. c tuyn V/I
UE
VP
o in tr m
IE
4. ng dng
S dng on c tuyn in tr m to cc mch dao ng. Cho nn UJT thng c dng trong cc mch : - Phng np to xung. - Trong mch nh thi cc mch bo ng - Quan trng nht l dng kch khi cho n chnh lu Silic c iu khin hot ng.
2.3. Transistor lng cc (BJT) (Bipolar Junction transisitor) 2.3.1. Cu to, nguyn l lm vic ca transistor
2.3.1. Cu to
Gm 2 ni tip xc ghp xen k nhau. C 2 loi Transistor ni: npn v pnp (h. 1)
C C C C
n
B
p B B n B
n E E E
p E
loi npn
lo i pnp
- cu to ra cc cu trc ny, p dng nhng phng php cng ngh nh: phng php hp kim, khuch tn, epitaxi - Cc E ( cc pht): c nng tp cht ln nht. C nhim v to ra dng in trong dng c - Cc B( Cc gc): Nng tp cht nh nht, c nhim v iu khin s in tch t E ti C. - Cc C( cc gp): nng tp cht trung bnh, to in tch t E ti C
b. Nguyn l hot ng
V EE
V CC
RE P
-
RC N B P
- - -
Ei
+ Ei +
-
- - - - -
vng him
vng him
Trong ng dng thng thng (khuch i): - Ni pht nn phi c phn cc thun: vng him hp li. - Ni thu nn phi c phn cc nghch: vng him rng ra.
Khi tip xc pht phn cc thun, cc ht dn a s l l trng s khuch tn t phn pht sang phn gc, cn cc in t t phn gc khuch tn sang phn pht to nn dng in IE = I Ep (I Ep >> IEn)
Cc l trng khuch tn sang phn gc, mt phn nh ti hp vi cc in t, cn phn ln chng tip tc khuch tn qua phn gc v pha tip xc gp. n tip xc gp, cc l trng s chuyn ng tri qua lp tip xc v to nn dng in cc gp ICp. ng thi, qua tip xc gp cn c dng in ngc ICBo (cn gi l dng in r). Nn ta c cng thc tnh dng in cc gp tng l: IC = ICp + ICBo = ICp - Ngoi ra cn c mt s phn t mang in cc B khuch tn v cc ngun . Theo nh lut Kichoft ta c: IE = IC +IB
1.a. c tuyn ng vo
IE (mV) 20V 10V 1V
V CB = 0V
0.7
VBE (V)
2.b. c tuyn ng ra
IC (mA) Vng tc ng 3mA I E =2mA 1mA Vng bo ha Vng ngng VBC ( v)
Do: - Tn hiu vo nn pht :BE - Tn hiu ra thu pht :CE C 2 ng vo v ra c cc pht chung
c tuyn cch rp CE
Gm c 3 dc tuyn thng dng sau: 2.a. c tuyn vo IB = f ( VBE) VCE chn lm thng s IB( mA) 1V 2V 3V 4 0 Q 0,7 VBE ( V)
IC ( mA)
ICES = ICBO
Hoc:
Ci Q + vi RB + VBB RE Co Vo + VCC
Trn thc t, s mc gp chung t c dng, ngi ta ch s dng mch ny phi hp tr khng gia mt mch c tr khng ra cao vi mch c tr khng vo thp. Cc c tuyn v tham s ca s mc cc gp chung cng tng t nh s mc cc pht chung.
ch ngt, ta ch cn cp ngun in sao cho hai tip xc P-N ca tranzito u phn cc ngc. ch bo ha, cp in sao cho hai tip xc P-N u phn cc thun hoc sao cho in p UCE = (0,20,4)V ch tch cc: - TE phn cc thun - TC phn cc ngc
Tnh c tr s im Q: VBB = RB IB + VBE (1) IB = ( - VBE) / RB (2) VBB IC = IB (3) VCC = RCIC + VCE (4) VCE = VCC- RCIC (6)
- Mch a hi
Knh n S P+ n P+ D
Knh p-
2. Nguyn l lm vic
- phn cc JFET knh N, ngi ta dng hai ngun in p ngoi l UDS > 0 v UGS< 0 (vi knh P, cc chiu in p phn cc s ngc li, sao cho tip gip p-n bao quanh knh dn lun c phn cc ngc). -Do tc dng ca cc in trng ny, trn knh dn xut hin 1 dng in (l dng in t vi knh n) hng t cc D ti cc S gi l dng in cc mng ID.
- Dng ID c ln tu thuc vo cc gi tr UDS v UGS v dn in ca knh ph thuc mnh c hai in trng ny. - Nu xt ring s ph thuc ca ID vo tng in p khi gi cho in p cn li khng i (coi l mt tham s) ta nhn c hai h hm quan trng nht ca JFET l : ID = f 1(UDS)UGS= const ID = f 2(UGS)UGS= const
3. c tuyn V/I
Trn nn l n tinh th bn n tp cht loi p (Si-p), ngi ta pha tp cht bng phng php cng ngh c bit (plana, Epitaxi hay khuch tn ion) to ra 2 vng bn dn loi n+ (nng pha tp cao hn so vi ) v ly ra hai in cc l D v S. Hai vng ny c ni thng vi nhau nh mt knh dn in loi n c th hnh thnh ngay trong qu trnh ch to hay ch hnh thnh sau khi c 1 in trng ngoi (lc lm vic trong mch in) tc ng (loi knh cm ng).
Ti phn i din vi knh dn, ngi ta to ra in cc th ba l cc ca G sau khi ph ln b mt knh 1 lp cch in mng SiO2. T MOSFET cn c tn l loi FET c cc ca cch li (IGFET). Knh dn c cch li vi nh tip gip pn thng c phn cc ngc nh 1 in ph a ti cc th 4 l cc .
phn cc MOSFET ngi ta t 1 in p UDS> 0. Cn phn bit hai trng hp: a. Vi loi knh t sn : - Xut hin dng in t trn knh dn ni gia S v D v trong mch ngoi c dng cc mng ID (chiu i vo cc D), ngay c khi cha c in p t vo cc ca (UGS = 0).
- Nu t ln cc ca in p UGS > 0, in t t do c trong vng (l ht thiu s) c ht vo vng knh dn i din vi cc ca lm giu ht dn cho knh, tc l lm gim in tr ca knh, do lm tng dng cc mng ID. Ch lm vic ny c gi l ch giu ca MOSFET. - Nu t ti cc ca in p UGS< 0, qu trnh trn s ngc li, lm knh dn b ngho i do cc ht dn (l in t) b y xa khi knh. in tr knh dn tng ty theo mc tng ca UGS theo chiu m s lm gim dng ID. y l ch ngho ca MOSFET.
b. Vi loi knh cm ng
- Khi t ti cc ca in p UDS < 0, khng c dng cc mng (ID = 0) do tn ti hai tip gip p-n mc i nhau ti vng mng - v ngun - , do khng tn ti knh dn ni gia mng ngun. - Khi t UGS > 0, ti vng i din cc ca xut hin cc in t t do (do cm ng tnh in) v hnh thnh mt knh dn in ni lin hai cc mng v ngun. dn ca knh tng theo gi tr ca UGS do dng in cc mng ID tng. Nh vy MOSFET loi knh cm ng ch lm vic vi 1 loi cc tnh ca UGS v ch ch lm giu knh.
3. c tuyn V/I
VDS
Cu to
K hiu
-Thyristor c 3 cc l Anot, Katot v Gate gi l A-K-G. - Thyristor l Diode c iu khin, bnh thng khi c phn cc thun, Thyristor cha dn in, khi c mt in p kch vo chn G => Thyristor dn cho n khi in p o chiu hoc ct in p ngun Thyristor mi ngng dn.
2. c tuyn v tham s
IG
Do tnh dn in hai chiu nn hai u ra chnh ca triac dng ni vi ngun in c gi l u ra MT1 v MT2 . Gia hai u ra MT1 v MT2 c nm lp bn dn b tr theo th t P-N-P-N nh SCR theo c 2 chiu. u ra th ba gi l cc iu khin G. Nh vy triac c coi nh hai SCR u song song ngc chiu vi nhau
b. K hiu
b. c tuyn V/I
Si
0.7
c. p dng
p dng thng thng ca Diod shockley l dng kch SCR. Khi phn cc nghch, Diod shockley cng khng dn in.
2. c tnh in tr nhit
c tnh nhit ca Termisto c th hin bng s ph thuc ca in tr ca n vo nhit
nhit in tr m
nhit in tr d ng
3. c tuyn V/I
U 30 20
10
500c 750c 1000C 125 c
0
K2 k1 K2 >K1
40 60
20
I(mA)
4. ng dng
Termistor ch tuyn tnh trong khong nhit nht nh 50-150oC do vy ngi ta t dng dng lm cm bin o nhit. Ch s dng trong cc mc ch bo v, ngt nhit .
3.1.2.Cu to, c tuyn tham s 1. Cu to - in tr quang l mt cu kin bn dn th ng, khng c lp tip xc P-N. - Quang tr gm mt lp cht bn dn (cadimi
sunfua CdS) ph trn mt tm nha cch in. C hai in cc v gn vo lp cht bn dn . K hiu
2. Nguyn tc hot ng
Khi nh sng chiu vo cht bn dn (c th l Cadmium sulfide CdS, Cadmium selenide CdSe) lm pht sinh cc in t t do, tc s dn in tng ln v lm gim in tr ca cht bn dn. Cc c tnh in v nhy ca quang in tr d nhin ty thuc vo vt liu dng trong ch to.
2. c tuyn,tham s a. Tham s
in dn sut P : l hm s ca mt nng lng quang () khi di bc sng khng i. p () khi = const nhy tng i ca in tr quang S(): l t s gia in dn sut thay i theo bc sng P() v in dn sut cc i p.max khi mt nng lng quang khng i:
b. c tuyn
S(%)
100 80 60 40 20 Bs (us)
CdS CdSe
0.5
0.6
0.7
0.8
0.9
in tr (ohm)
3. ng dng
Dng trong mch m in v m dng din AC, mch bo ng. Ngy nay, quang tr c dng thay cho cc t bo quang in trong hu ht cc mch iu khin t ng.
3.2. Dit quang (Photodiode) 3.2.1. Cu to c tuyn tham s 1. Cu to: - Diode thu quang hot ng ch phn cc
nghch, v diode c mt ming thu tinh nh sng chiu vo mi P N , dng in ngc qua diode t l thun vi cng nh sng chiu vo diode.
K hiu ng
Minh ho s hot
2. Nguyn l lm vic
Mi ni P-N phn cc nghch Khi nh sng chiu vo ni P-N c nng lng lm pht sinh cc cp in t - l trng st hai bn mi ni lm mt ht ti in thiu s tng ln. Cc ht ti in thiu s ny khuch tn qua mi ni to nn dng in ng k cng thm vo dng in bo ha nghch I0 t nhin ca diod, thng l di vi trm nA vi quang diod Si v di vi chc A vi quang diod Ge
3. c tuyn E/I
I 50V 1V
3.3. Transistor quang, Transistor trng quang v Thyristor quang. 1. Transistor quang a. Cu to
V mt cu to, quang transistor cng ging nh transistor thng nhng cc nn h. Quang transistor c mt thu knh trong sut tp trung nh sng vo ni P-N gia thu v nn.
K hiu
b. c tuyn
I(mA)
c. ng dng Dng trong thng tin quang v thit b quang in: quang k, ng nht Relais.
b. Nguyn tc hot ng
Khi chiu nh sng vo knh n, cc in t - l trng di ng sinh ra . Di tc dng ca in trng l trng chuyn vo bn dn P (cc y), cn in t chuyn ng vo bn dn n. Hin tng ny to nn dng in cc y Iq. Nu cc y c mc in tr RA th Iq gy nn st p trn n l: dUA = RA.Iq
S thay i in p cc y s lm thay i dng incc ca Ic ,mt lng tng ng bng: dIC= SdUA = S.RA.Iq S: h dn ca transistor trngquang. Nh vy dng in cc cuwarcuar transistor trng quang c iu khin bi dng quang cc y v n c khuch i ln S.RD ln.
c. ng dng
S dng trong thng tin quang
Ant (A) l mt lp bn dn loi P c nng tp cht cao v Catt (K) l lp bn dn loi N c nng tp cht cao. Cn hai vng bn dn N v P gia c nng tp cht thp nn b rng ca tip xc P-N gia chng ln hn nhiu so vi hai tip xc P-N ant v catt.
thyrixto quang, tn hiu quang ch lm nhim v kch cho thyrixto dn in ch khng iu khin c gi tr dng in ant. Cng tn hiu quang ch c tc dng lm thay i thi gian ng m ca thyrixto
b. c tuyn
I E 3 > E 2 > E1
UAK
b. Nguyn l lm vic
Khi chiu sng ln lp bn dn N, do qu trnh lng t ha s sinh ra tng i in t -l trng. Do , in trng tip xc gim, cc ht dn a s s khuch tn qua tip xc P-N
- i vi diod Ge, Si th nng lng pht ra di dng nhit. Nhng i vi diod cto bng GaAs (Gallium Arsenide) nng lng pht ra l nh sng hng ngoi (khng thy ) - Vi GaAsP (Gallium Arsenide phosphor) nng lng pht ra l nh sng vng hay . - Vi GaP (Gallium phosphor), nng lng nh sng pht ra mu vng hoc xanh l cy.
5.1.2. Cu to:
it pht quang gm c mt lp tip xc P-N v hai chn cc ant (A), catt (K). Ant c ni vi bn dn loi P, cn catt c ni vi bn dn loi N Vt liu ch to it pht quang u l cc lin kt ca cc nguyn t thuc nhm 3 v nhm 5 ca bng tun hon Menlep nh GaAs, hoc lin kt 3 nguyn t nh GaAsP v.v.. K hiu:
0.3
0.7
1.5
VD (V)
5.1.3. ng dng
- Cc Led pht ra nh sng thy c dng lm n bo, trang tr. - Cc LED pht nh sng khng nhn thy c dng trong cc mch bo ng, iu khin t xa.
sng, nh sng ny tc dng o transistor quang v s to ra in p ra bin thin. - Ton b h thng ny c bc kn trnh sng mi trng vo gy nhiu. b. ng dng - Khuch i tn hiu - Dng trong mch iu khin cc pha chm trong my tnh
dch ha hc nhng ch c nh sng chiu vo. Sau ta loi b lp cm quang v kt qu c tm bn dn trn c ph mt lp bo v bng SiO2 theo cu hnh yu cu. - Mi lp ph bo v bng SiO2 theo cu hnh yu cu c gi l mt mask (mt n), mi ln to ra mt mask phi c lp li y cc bc nu trn.
2. Qu trnh plama.
1. Gia cng tm bn dn silic tinh khit 2. Oxy ha tm bn dn 3. Cho n mn lp SiO2 pha di tin hnh khuch tn tp cht vo (v d loi P) 4. Ph lp cm quang 5. Quang khc v n mn chn lc lp SiO2 theo cu hnh ca khun nh sng. 6. Khuch tn tp cht loi N (nguyn t nhm 5 tp cht cho) vo to vng colect khi ch to tranzito loi N-P-N. 7. Sau oxy ha ln th hai to lp SiO2.
8. Ph lp cm quang, che mt n, chiu sng v cho n mn ta thu c mt n th hai. 9. Khuch tn bn dn loi P (nguyn t nhm 3tp cht nhn) to vng baz 10. Oxy ha to lp SiO2. 11. Quang khc v n mn chn lc ta thu c mt n th ba v tin hnh khuch tn tovng N+ ca Emit. 12. Oxy ha, quang khc v n mn ta c mt n th t gn cc in cc E,B,C.
c. Phn loi theo loi tranzito c trong IC Vi mch lng cc Vi mch MOS d. Da theo s phn t c tch hp trong IC Vi mch loi SSI: s phn t c tch hp < 12 Vi mch loi MSI: s phn t c tch hp t 12 100 Vi mch loi LSI: s phn t c tch hp t 100 1000 Vi mch loi VLSI: s phn t c tch hp >1000
Mt b khuch i thut ton l tng phi t c cc tiu chun sau: - H s khuch i in p Ku - Tr khng vo Zvo - Tr khng ra Zra 0 - Di tn s lm vic f
U vo khng o
U vo
d. Mch ng dng
Khuch i o dng IC thut ton
V cng ngh ch to, IC digital gm cc loi: - RTL: Resistor Transistor logic - DTL: Diode Transistor logic - TTL: Transistor Transistor logic - MOS: metal oxide Semiconductor - CMOS: Complementary MOS
IC logic : l thc hin mt php ton logic chng c to thnh t cc hm logic cbn: AND, NAND, OR, NOR
Chng 5: Dng c hin th 5.1. Hin thi tinh th lng (LCD: Liquid Crystal Display ) 5.1.1. Cu to, nguyn l lm vic.
- Tinh th lng l loi vt liu hu c c cu to dng tinh th nhng dng lng trong iu kin thng.
5.2. ng tia in t (CRT: Catot Ray Tube) 1. Khi nim - L dng c in t bin i tn hiu in
thnh hnh nh c th quan st, o lng v nguyn l lm vic.
A1
A2
X1
X2
Y1 a b
Y2
Mn hunh quang
- Ant A1, A2 phn cc thun, c in th khong vi trm volt. Cc Anot ny c tc dng gia tc cho in t chng t vn tc ln. b. H thng lm lch (li tia): c tc dng li tia in t cho ph hp vi dng tn hiu, gm: 2 cp xuyn X1X2 v Y1Y2 t vung gc nhau: - in p Uy t vo Y1Y2 th to ra in trng li tia theo chiu thng ng. - in p Ux t vo X1X2 th to ra in trng li tia theo phng ngang.
Kt hp cc in trng lm cho tia in t i theo qu o ca tn hiu. Cc in cc ni trn c t trong ng thy tinh c chn khng cao. C. Mn sng - Cht hunh quang c bi vo mt trong ca y ng.
- Khi c in t bn ph vo im no ca mn sng th in t ca cht hunh quang c tng nng lng t W1 W2 nhng mc nng lng ny khng bn vng, in t nhanh chng tr v mc nng lng ban u v gii phng mc nng lng: W1 W2 di dng nh sng.
- Tham s quan trng ca ng tia tia in t l d huy: l khong thi gian k t khi im no ca mn sng bt u pht sng n khi nh sng ti im ht. Ty theo kt cu ca cht hunh quang c d huy khc nhau, t= 10us 10s
Cun Y1Y2 to ra ng sc t trng theo phng ngang s gy ra t lc Fy theo phng ng v sau c tc dng li tia in t tng t ng tia in t khng ch bng in trng
X1
Fy Fx Y2
Y1
X2
5. ng dng
ng hin sng ng thu hnh
Chng 6: Dng c in thanh 6.1. Khi nim dng c in thanh - L dng c gip lan truyn m thanh nh cc
phn t in.
6.2.2. Cc tham s
Cng sut danh nh ca loa in p danh nh ca loa Tr khng danh nh ca loa Thanh p ca loa: biu th nhy ca loa. Vi cng mt cng sut m tn cung cp cho loa, loa no c thanh p ln hn th nhy cao hn. p tuyn tn s ca loa: biu th s bin i ca thanh p chun ca loa khi tn s thay i.
c a
e f
a: nam chm, c th l hnh mng nga hay hnh tr b: cun dy c: li g, gn vi mng loa mng loa rung ng d: mng loa e: 2 ming st hnh ch U f: cc ming st non g: cn cu, mt u gn vo li g, mt u gn vo chp loa
b. Nguyn tc hot ng Khi cha c dng in m tn chy qua cun dy th cun dy v li g nm trong mt t trng khng i ca nam chm. Khi dng in m tn chy qua cun y loa th to nn t trng bin i. Li g nm trong t trng ny nn b rung ng theo tn s ca dng in chy qua cun dy. H thng cn cu ny truyn rung ng ti mng loa. Mng loa rung ng v pht ra m thanh.
c. u, nhc im ca loa in t Cu to n gin. Cht lng km, ting trm, ting bng u b ct v c ting ku do li g ht v mt bn.
a. Cu to
g a e
e f
a: ming s p in c trng bc hai mt c: ming cao su truyn ng d: nn loa bng giy g: sn loa e: np y f: hai dy dn in
b. Nguyn tc hot ng
S p in c nhiu loi c tnh cht p in khi a mt in p m tn vo hai mt ca tm s p in th n s rung ln theo nhp iu m tn. S rung ng truyn qua ming cao su ti nn loa v loa pht ra m thanh.
c. u nhc im ca loa s p in
Cu to n gin, d lp rp, d sa cha, gi thnh h, tiu th t cng sut m tn Ting loa c nhiu thanh, t trm.
3. Loa in ng a. Cu to
ng ngoi loa
Loa nn c hai phn: ng c loa v vnh loa. ng c loa c nam chm, khe t, cun dy v mng loa bng nha cng v trn v li. Vnh loa thng gm c 3 ng: ng trong cng hinh tr nh nht, ng gia hnh tr ln hn, ng ngoi cng to v loe rng ra.
b. Nguyn l hot ng
Khi dng in m tn chy qua cun dy th lm cho cun dy rung ln, truyn rung ng n mng loa, m thanh pht ra c phng ra pha trc, ln lt qua cc ng nh, ng gia, ng ngoi, lm cho th tch khng kh dao ng b dao ng tng dn ln, ting loa pht ra rt to.
c. u, nhc im
Hiu sut cao Cht lng m thanh km, di tn hp. Loa nn ch nn dng ngoi tri, ni n o, khng nn t trong hi trng.
10W 5W 1.5 w 0W
Cc loa ny dng dng km bin p. Bn s cp bin p c cc u 30V, 120V, 240V u ln ng dy truyn thanh c in p tng ng. Bn th cp u vo cc loa v cng c 3 u ng vi cc mc cng sut cung cp cho loa Cc loa ny c vnh hng thanh c ting pht ra trm m nn c th trang m trong hi trng
6.2.3. T hp loa
1. Loa nn loa chm - Loa nn c cht lng m thanh cao, dng trang m trong cng vin, qung trng, thng gp loi 10 W, 25 W. - Bin p loa c cu to nh sau:
2000ohm 1500 16 ohm 8 0
Ngi ta thng b tr vi ba loa nn thnh loa chm phc v nhng ni ng ngi , n o. Loa chm kiu ny cht lng m thanh km hn, nhng phm vi phc v rng hn.
2. Loa ct
Gm mt s loa in ng mng giy t trong mt hp g hoc st di, bn trong cc cht ht m. B tr loa nh vy th loa c hng tnh ta rng ra xung quanh nhng li thu hp theo chiu thng ng. Do b tr loa ct trong hi trng, rp ht va m bo cht lng m thanh, va hn ch c ting r do m thanh p ln trn v sn nh di tr li micro
10W 5W 2.5W
Loa ct
Thng loa ch ton b hp v cc loa bn trong. Thng loa nhm cho hiu qu ca loa tng ln. C hai loi thng loa: - Loa c b tr trong thng loa hon ton kn, l thng loa kn. - Loa c b tr trong thng kn nhng mt trc c mt l hng c tnh ton chnh xc gi l thng loa c l hng.
Trong thng thng c t hai ti 3 loa , c loi ti 5 loa. Phi b tr nhiu loa nguyn nhn ch yu v mi loa ch lm vic tt vi mt di tn s nht nh.
3. Cc loi micr
Micr in ng (micro cun dy) Micr bng Micr tinh th Micr t in Micr than