S LAO NG THNG BINH V X HI TRNG CAO NG NGH TP.

H CH MINH --- o0o---

S GIO N

L THUYT

Mn hc: LINH KIN IN T Lp : C11DT Kho : 11 Gio vin hng dn :DNG NGC QU Gio sinh thc tp :Nguyn Vn Tin Nm hc :2011-2012

Quyn s:.......

GIO N S:.......................

Thi gian thc hin : 45 pht Tn chng : Chng II .CC LOI TRANSITOR Thc hin ......ngy......... thng....... nm 2011

TN BI: TRANSITOR TRNG FET. MC TIU CA BI:

Sau khi hc xong bi ny ngi hc c kh nng:

V kin thc: + Hiu c nguyn l hot ng ca hai loi transitor trng JFET v MOSFET. V k nng: + Nhn bit, phn loi c hai loi transitor trng theo c im v ng dng trong cc mch in thc t. Tnh cm thi : + Rn luyn thc nghim tc trong hc tp,ch ng lnh hi kin thc,tch cc c thm t cc ngun ti liu khc. DNG V PHNG TIN DY HC Bng phn. Gio n, gio trnh My chiu ....................................................................................................................................................... I. N NH LP HC: Thi gian : 03pht

.............................................................................................................................................
im danh. Kim tra bi c.

............................................................................................................................................ II. THC HIN BI HC

TT NI DUNG HOT NG DY HC
HOT NG CA GIO VIN HOT NG CA HC SINH

THI GIAN 02 pht

Dn nhp
(Gi m, trao i phng php hc, to tm th tch cc ca ngi hc....) Trong bi Transitor l linh kin bn dn c h s khuch i ln nhng tng tr vo nh v tn s p ng thp.Bi hm nay chng ta s tm hiu

-Dn nhp vo bi: Nu v d v to cng NOT t BJT. -t cu hi : v sao trong thc t t dng phng php ny?

-Lng nghe. -Tr li cu hi.

v FET mt loi linh kin bn dn ph bin trong cc mnh in t hin nay.

+p n: BJT c tn s hot ng thp,khng p ng kp thay i ca mch. =>ngi ta ch to ra transitor trng FET p ng yu cu ny. -V hnh minh ha cu to ca hai loi JFET knh N v knh P. Lng nghe-ghi chp 2 pht

Ging bi mi ( cng bi ging) I.JFET (Junction Field Effect Transistor). 1.Cu to. -Lp bn dn N nm gia hai lp bn dn P. -Hai lp P ni chung a ra ngoi gi l cc G. -nh trn knh N ni ra cc D, nh di ni ra cc ngun S.

-Gii thch k hiu cc cc ca JFET: G(gate),D(drain), S(suorce).

-Quan st.

2 pht

2.Phn loi . JFET chia lm 2 loi: + Knh N:Knh dn l bn dn -t cu hi: im loi N khc nhau c bn trong cu to ca D JFET knh N so vi JFET knh P? +p n : knh dn.
P N P

-Tr li cu hi 2 pht

+ Knh P:Knh dn l bn dn loi P

S
3.Nguyn l hot ng. Da trn nguyn l ca chuyn -t cu hi: gii thch nguyn l hnh tip P-N: thnh vng ngho? Vng ngho +p n: Do hot ng khuch tn in t v l trng qua chuyn tip PP N N,trn ng i chng kt hp vi nhau to thnh 2 + Khi VDS > 0 c dng ID chy t lp in tch khng D sang S, dng e i t S sang gian tri du D lm cho vng ngho m rng =>vng ngho. ra.

-Tr li cu hi 2 pht

+ Khi VDS

=VP lm 2 vng ngho chm vo nhau ,lc ny dng ID =0 JFET knh P 0 < ID < IDSS 0<VGS < VP

JFET knh N 0 < ID < IDSS VP <VGS <0

 c tuyn ng ra ca JFET knh N

ID(mA )
VG = S 0

VG =S 1

VG =S 2 VG =S 3

Phng trnh Shockley

VGS (V) -4 -3 -2 -1 0 0

VDS (V)
VG =-4 S

ID = IDSS ( 1 VGS / VP)

IG = 0, ID = IS

-Hng dn hc vin vn dng phng trnh shockey gii bi tp phn cc JFET. -Cho hc vin lm bi tp p dng: bi tp 1.

-Lng nghe, ghi chp cng thc.

2 pht

Bi tp1 .Cho mch nh hnh v, tnh Q?

-Lm bi tp vi s hng dn ca gio vin.

5 pht

p n: -Tnh ID: (GS) :VGS + ISRS =0 =>VGS= - ISRS=-IDRD=1,5ID.(1) -Th VGS =-1,5 ID ,VP= -4vo PT shockey ta c:

+ nhn xt, sa bi tp 1. Nhn mnh cng thc hc vin nh.

+lng nghe, sa bi, ghi chp.

ID=10(1-1.5 ID/4)2 <=> 22,5ID2-136 ID+160=0 ID1=1,6 mA =>VGS=-1,5x1,6=-2,4V ID2=4,4 mA =>VGS=-1,5x4,4=-6,6V JFET knh N th VP<VGS<0 Chn nghim ID1 tha k. =>ID=1,6mA -Tnh VDS (DS):-VDD+IDRD+VDS+ISRS=0 =>VDS=VDD-ID(RD+RS) =24-1,6(6,2+1,5)=11,68V =>VDS=11,68V Q(ID,VDS)=(1,6 mA ; 11,68V) II.MOSFET (Metal Oxide Semiconductor FET) 1.D-MOSFET (Depletion MOSFET : MOSFET knh c sn) a.Cu to . Lp bn dn nn loi P hay N c ni ra ngoi to thnahf cc SS ( Subtrate). Cc D v S c ni n lp bn dn N hay P khc loi vi lp bn dn nn. Cc G c ngn vi lp bn dn knh N hay P bng lp Oxit SIO2 nh l in mi.

-V hnh minh ha cu to ca hai loi D-MOSFET knh N v knh P. -Gii thch k hiu cc cc ca DMOSFET: G(gate),D(drain),S( suorce),SS (subtrate)

-Lng nghe-ghi 2 pht chp

-Quan st.

1 pht

b.Phn loi . D-MOSFET chia lm 2 loi: + Knh N:Knh dn l bn dn -t cu hi: im loi N,cht nn loi P khc nhau c bn trong cu to ca D-MOSFET knh N so vi knh P? +p n : knh dn.

-Tr li cu hi 1 pht

N N

SS

+ Knh P:Knh dn l bn dn loi P, cht nn loi N

D

P P

SS

c.Nguyn l hot ng.

VD
D

D G
e e e e e e e e e e

S S

-Gii thch nguyn l trong trng hp VGS<0.

-Lng nghe, ghi chp.

2 pht

e e

S ID

-t cu hi: gii thch v sao khi VGS >0 dng ID tng ln hn IDSS?

-Vn dng kin 1 pht thc va hc tr li cu hi.

 Khi VGS =0 Khi VGS <0 Khi VGS > 0

ID = IDSS ID < IDSS ID > IDSS

2.E-MOSFET.(Enhancement Mosfet : Mosfet cha c sn knh) a.Cu to. V cu to tng t nh DMOSFET tuy nhin khng c knh -V hnh minh ha dn ni gia cc D v S. cu to ca hai loi b.Phn loi. E-MOSFET E-MOSFET chia lm 2 loi: knh N v knh P. + Knh N:hai cc D,S l bn dn loi N ,cht nn loi P
D

-Lng nghe, ghi chp chnh.

2 pht

N S S

P
N

-t cu hi: im khc nhau c bn v cu tao gia DMOSFET v E-MOSFET.

-Quan st hnh v tr li cu hi.

1 pht

+p n: E-MOSFET khng + Knh P: hai cc D,S l bn dn c knh dn ni D loi P ,cht nn loi N vi S nh DMOSFET.
S

P SS

N
P

-Phn tch,gii thch nguyn l dn do cm ng ca EMOSFET .

-Lng nghe,quan st,ghi chp chnh.

1 pht

c.Nguyn l hot ng.

VD
D

D
SS

S G S
ID
e e e e

-t cu hi: gii thch nguyn l khi VGS>0? +p n: Khi VGS > 0 in p dng ti G y cc l trng ca nn ra xa v ko cc e trong lp bn dn nn li gn b mt SiO2

-Vn dng kin 1 pht thc va hc tr li cu hi.

Khi VGS = 0

ID=0

Khi VGS > 0 + Khi VGS > 0 in p dng ti

G y cc l trng ca nn ra xa v ko cc e trong lp bn dn nn li gn b mt SiO2. VGS = VT to thnh knh dn =>VT : gi l ngng dn.

 c tuyn ng ra E-MOSFET knh N:

ID(mA)

ID
8 7 6 5 4 3 2 1

VGS =8 VGS =7 VGS (V) VGS =6 VGS =5 VGS =4 VGS =2

1 2

3 4

5 6

7 8 9 10 VGS

5 10 15 20 VDS

3.ng dng. E-MOSFET c tn s hot ng -thuyt trnh cao ,in tr vo ln nn c s dng ph bin trong cc mch in t cng sut v IC tch hp. ng ngt xung tn s cao.

-lng nghe, ghi chp

1 pht

Bi tp 2. Thit k cng NOT,AND t E-MOSFET. a.cng NOT:

10

P T1
Y

-a ra mch nguyn l v hng dn hc vin ln in vo trng thi ca cc EMOSFET.

- Ghi chp cc nhn mnh ca gio vin

2 pht

N T2

-p n: A 0 1 T1 ON OFF T2 OFF ON Y 1 0

-V bng trng thi trng, gi hc vin ln bng in vo cc trng.

-Lm bi tp : t bng trng thi suy ra hm ng ra Y theo ng vo A,B.

3 pht

T bng trng thi => Y= /A

b.cng AND:

N T1

-nhn xt, sa bi tp 2. Ch iu kin dn ty theo ip p cc G: +loi E-MOSFET knh N: dn khi G 1 +loi E-MOSFET knh P: dn khi G 0

-Quan st ghi chp.

2 pht

G B

N T2
Y

P T3

P T4

11

-p n:

A 0 0

B 0 1

T1 OFF OFF

T2 OFF ON

T3 ON ON

T4 ON OFF

Y 0 0

ON

OFF

OFF

ON

ON

ON

OFF

OFF

T bng trng thi => Y= A.B 3

Cng c kin thc v kt thc bi Tm lc cng thc c bn ca JFET: pt Shockey. Giao bi tp: thit k cng logic OR t E_MOSFET 4 Hng dn t hc Thuyt trnh Lng nghe, ghi chp tm lc m gio vin nhn mnh. 03 pht

- Dn d sinh vin nn tham kho

trn cc website in t: hocnghe.com, dientuvietnam.net.... b sung, nng cao kin thc.

02 pht

Ngun ti liu tham kho [1]GT K Thut in T- Hong Ngc Vn H.SPKT.TPHCM-2005 [2] www.hocnghe.com
TRNG KHOA TRNG T MN

Ngy.....thng ........nm........
GIO VIN

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