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BI 1: Volt
b.
2.
R2-Lch na khung
31.2k
Rm1=R2-2R1
3.84k
b.
3.
Bng gi tr cc ln o :
Ln o
R1-Lch ton khung
Gi tr tr
13.68K
Bng gi tr cc ln o :
i Lng
E (mV)
255
I(uA)
50
Rm2
5.1k
b.
Bng cc gi tr o :
Bin tr
R50k
R100k
Rm3
Gi tr
1.02k
11.3k
3.6k
4.
5.
RmTB =4.18K=R1
R1 , R2, R3.
Tm o c lp
Rtd =
Rmtb
Tm o
in
tr RS
0-1V
15.8K
Tr s in tr tng ng cc
lch
E1
E2
25%
0.194
0.25
50%
0.416
0.5
75%
0.621
0.75
100%
0.831
1
Sai s tng i
( TB cng)
=18.325%
0-5V
95.8K
0-10V
195.8K
E1
E2
E1
E2
1.05
1.25
2.36
2.5
2.1
2.5
4.83
5
3.2
3.75
7.21
7.5
4.2
5
9.65
10
=15.675%
=4.1%
Bng s liu :
Chnh lu bn sng
nhy xoay chiu
Tm o
Tnh ton
5
39K
10
84.5K
20
175K
o c
40.4K
88.3K
191K
Sai s
3.5%
4.5%
9.1%
o c
73K
160K
350K
Sai s
21.67%
6.7%
5.7%
20
1.55
30
1.93
40
2.35
50
2.75
60
3.16
70
3.53
80
3.
90
4.35
100
4.73
- Thang 10V
Gc lch (%)
10
Volt
1.66
20
2.48
30
3.5
40
4.13
50
5.1
60
5.85
70
6.62
80
7.56
90
8.42
100
9.45
- Thang 20V
Gc lch (%)
10
Volt
3
20
4.8
30
6.5
40
8.3
50
10.1
60
12
70
13.6
80
15.5
V th.
90
17.5
100
19.5
BO CO TH NGHIM
O IN T
Sinh vin : Hu Lim - 40801077
I.Trnh t th nghim:
1. Kho st p ng tn s ca cc loi vole k :
a.S mch th nghim .
Ta c kt qu o bng sau :
Dng in p
SINE
Vung-2 cc
Vung-1 cc
Tam gic
Tr s Vm t
OSC
2V
2V
2V
2V
Tr s o c t cc Volt k
Metrix DT888
SANWA-True RMS
Vac
Vac
Vac
Vdc
Vrms
1.4
1.37
1.27
73mV
1.34
2.15
2.23
1.782
8mV
1.79
2.45
2.23
0.7
2.05
2.75
1.1
1.06
1.03 50.3mV 1.08
A.Metrix :
Thang logarith
B.DT888:
C.Sanwa-True RMS:
b.Trnh t th nghim :
-S dng ln lt cc loi volt k o in p nh trn vi cc cp
in tr thay i .
-Ta c bng kt qu o vi tng loai volt k :
A.Metrix
Tm o
10V
30V
100V
B.DT888
Tm o
Volt k DT888
Tr s in p
R5=R6=1M
2
0.5
1
20V
200V
2000V
R1=R2=1K
5.85
5.6
4
R3=R4=100K
6V
6.3V
8V
R1=R2=1K
3.78
3.5
1
Volt k DT888
Tr s in p
R1=R2=1K
R3=R4=100K
5.4
5.9
R1=R2=1K
3.7
C.SANWA-True RMS
Tm o
Auto range
II.Bo co th nghim :
1. C cu chuyn i DC-AC bn trong cc loi Volt k .
- i vi Volt k kim ( c cu in-t, t-in, in -ng ) :
o DC
-B bin i nhit.
- i vi Volt k in t :
o DC: dng mch cu o 2 transistor 2 mi ni , in p vo l n
cc B1 ca Q1, hoc B2 ca Q2 , cn lai ni mass . Hoc Vi sai
gia B1 v B2 .in p ly ra cc E hoc C ca transistors . Ngoi
ra cn dng FET . S dng thang chia p ng vo bng in tr
phn tm o.
hoc
Bo Co Th nghim
o in t
Bi 3 : o in Tr
Sinh vin : Hu Lim -40801077
A. o in tr:
I.Phng php Volt-ampe :
-o r ngn v r di .
-o :bng n , in tr s , in tr dy qun.
Ln
Bng n
in tr s
in tr dy qun
R ngn
R di
R U
R ngn
R U
1.8
0.14
13
1.8
0.14
13
4.9
0.34
14
4.9
0.32
10
0.4
25
10
15
0.5
30
20
0.58
34
R di
R ngn
R U
R di
R U
1.9
0.3m
6k3
1.8
0.4m
4k5
1.8
5m
360
1.8
7m
257
15
0.9m
5k5
4.9
1.4m
3k5
25m
200
27m
185
0.45
22
9.9
2.2m
4k5
10.5
2m
5k2
10
48m
208
10
54m
185
15
0.53
28
15
3.8m
4k
15
3.5m
4k3
15
78m
192
15
77m
195
20
0.58
34
20
4.8m
4k1
20
4.8m
4k2
20
90m
222
20
115m
174
Ln o 1- G1
Loi in tr
Ln o 2 - G2
Ln o 3 -G0
Tm o
Gi tr
Tm o
Gi tr
Tm o
Gi tr
Al
X1
1.9
X1
1.8
X1
2.2
Cu
X0.1
4.4
X0.1
4.5
X0.1
4.3
Fe
X0.1
X0.1
X0.1
2.5
2.o in tr nh
Ln o 1- G1
Loi in tr
Ln o 2- G2
Ln o 3- G0
Tm o
Gi tr
Tm o
Gi tr
Tm o
Gi tr
Fe
X0.001
X0.001
7.5
X0.001
4.3
Al
X0.001
X0.001
X0.001
2.2
Cu
X0.001
3.5
X0.001
2.2
X0.001
3.3
B. o in tr tip t:
I.o bng Volt k v Ampe k :
a.o trc tip :
Gi
tr
tnh
ton
R
a
Gi
tr
tnh
ton
R
Ln 1
U1
I1
30
0.15
20
Cc A (v B
Ln 2
Ln 3
U2
I2
U3
I3
24
0.14
17
0.1
171
170
182.4
Ln 4
U4
I4
12
0.07
171
Ln 5
U5
I5
6
0.03
200
Ln 1
U1
I1
3
0.07
43
Cc C (v B)
Ln 2
Ln 3
U2
I2
U3
I3
11
0.21
17
0.31
52
55
51.225
Ln 4
U4
I4
25
0.47
53
Ln 5
U5
I5
34
0.64
53
Ln
o 1
U1
67
Ln
o 2
U1
50
Cc A v B
Cc B v C
Cc C v A
I1
0.26
R1
U2
I2
R2
U3
258
64
0.25
256
63
V tr th nht ca con tr bin tr
I3
0.18
Cc A v B
Cc B v C
Cc C v A
I1
0.2
R1
250
U2
51
I2
0.2
R2
255
U3
50
I3
0.14
R3
350
R3
357
Ln
o 4
U1
26
Ln
o 5
U1
11
Cc A v B
Cc B v C
Cc C v A
I1
0.15
R1
U2
I2
R2
U3
247
38
0.14
271
39
V tr th ba ca con tr bin tr
I3
0.11
Cc A v B
Cc B v C
Cc C v A
I1
0.11
R1
U2
I2
R2
U3
256
25
0.09
278
25
V tr th t ca con tr bin tr
I3
0.07
Cc A v B
Cc B v C
Cc C v A
I1
0.057
R1
U2
I2
R2
U3
193
12
0.04
300
12
V tr th nm ca con tr bin tr
I3
0.03
Gi tr trung bnh ca :
- R1= 237 =Ra +Rb
- R2=272 = Rb+Rc
- R3=370 = Rc+Ra
Gi tr ca in tr cc cc :
- Ra=185
- Rb=90
- Rc=180
II.o bng my o chuyn dng :
Kt qu t my o chuyn dng :
- Ra=185
- Rb=87
R3
354
R3
357
R3
433
- Rc=185
Bo Co Th Nghim
o in T
Bi 4 : o in dung v in cm
Sinh vin : Hu Lim -40801077
A.o in dung-in cm bng cu n gin :
1. o in dung bng cu
S mch th nghim :
Ln o
1
2
3
P
1k
2k
3k
T in 1
Q
Cmu
1k
1.08u
1k
0.56u
2k
0.72u
Khi cu cn bng :
CX(uF)
1.08u
1.12u
1.1u
P
1k
2k
3k
T in 2
Q
Cmu
1k
4.26u
1k
2.1u
2k
3.02u
CX(uF)
4.26u
4.2u
4.53u
2. o in cm bng cu :
Ln o
1
2
3
P
3k
2k
1k
Q
2k
1k
1k
Cun dy 1
Lmu
R
20
6.3m
30 4.06m
20
8m
LX(mH)
9.45m
8.1m
8m
P
3k
2k
1k
Q
2k
1k
1k
Cun dy 2
Lmu
R
10
1.5m
10
1.3m
10
2.1m
LX(mH)
2.25m
2.6m
2.1m
a/ Cu Sauty
b/ Cu Nernst
o in cm bng cu Maxwell :
a/ Cu Maxwell-Wien
b/ Cu Hay
a/ Cu Owen
b/ Cu Schering
Tm o
T 1
Tm o
T 2
1
2
10uF
-
4.1uF
-
1uF
10uF
1uF
1.1uF
Hao mt nh th in dung D c h s D nh
cht cao tc l hao mt nh , Q>10
Bo Co Th Nghim
o in T
Bi 5 : o Tn S V Pha
Sinh vin : Hu Lim -40801077
I.
II.
Quan st dng :
Ngun pht sng
Tr nh
Chu k
Vmax
Vmin
My pht m tn
Tr nh
Chu k
Vmax
Vmin
p li cch ly
Tr nh
Chu k
Vmax
Vmin
o tn s :
S mch:
Hnh dng s b :
III.
o lch pha:
1. Phng php lissajous :
S mch th nghim :
Khng c bin p:
Hnh dng s b:
C bin p cch ly
Khng c bin p
Hnh dng s b :
C bin p cch ly
Hnh dng s b :
gi l cao.
C bin p cch ly