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Periodic Table:
r,Si
= 11.7,
13
r,SiO 2
= 3.9
10
12
F/cm,
10
SiO 2
3.5 x10
F/cm
0.06 V
III B Al Ga In
IV C Si Ge Sn
V N
P
As Sb
Drift/Diffusion:
Drift velocity : Conductivity : Diffusion flux : Einstein relation : sx =
m
Electrostatics:
Ex
dE(x) = (x) dx d ( x) = E (x) dx d 2 ( x) = (x) dx 2 E (x) = ( x) = (x) = 1 1 ( x)dx E (x)dx (x)dxdx
= q( e n + h p) C Fm = Dm m x Dm kT = q m
Electron concentration : Hole concentraton : Electron current density : Hole current density : Poisson's equation :
n ( x, t ) 1 J e ( x, t) = gL (x, t) t q x p( x, t) 1 Jh (x,t) + = gL ( x, t) t q x
n i2 ] r(T) n i2 ] r(T)
n(x, t) x p(x, t) J h (x, t) = q h p( x, t)E (x,t) qDh x E (x, t) q + = [ p(x, t) n(x, t) + N d (x) N a (x)] x
kT N D ln q ni kT N A ln q ni
dn' = gl (t) dt
p - type, N a >> N d po Na Nd NA , n o = n i2 po ,
p
( po + n o + n') n' r
min
with
( po r)
Flow problems (uniformly doped quasineutral regions with quasi-static excitation and low level injection; p-type example): n'(x) 1 d 2 n'(x) = gL ( x) Minority carrier excess : Le De e 2 2 dx De Le dn'(t) Minority carrier current density : J e (x) qDe dx
Majority carrier current density : J h (x) = JTot J e ( x)
1 Dh Electric field : E x (x) J h (x) J e (x) q h po De dE x (x) Majority carrier excess : p'(x) n'( x) + q dx Non-uniformly doped semiconductor sample in thermal equilibrium
w(v AB ) =
Si
v AB ) (N Ap + N Dn ) q N Ap N Dn
b
E pk =
2q (
(N
N Ap N Dn
Ap
+ N Dn )
qDP (v AB ) = AqN Ap x p (v AB ) = A 2q
Si
v AB )
(N
N Ap N Dn
Ap
+ N Dn )
p(x n ) = w m,eff =
[e
qv AB / kT
-1]
wn
qQNR,p -side = Aq
-w p
n'(x)dx,
n'(x) in QNRs
Ebers-Moll Model for Bipolar Junction Transistor (BJT) characterisitics (npn example;
no base width modulation):
w ihE D N De Dh = h AB B,eff iE = ihE + ieE = Aqn i2 + E [e qVBE / kT 1] ieE De N DE w E,eff N DE w E ,eff N AB w B,eff 2 2 w B ,eff w B ,eff De qV BE / kT 2 iC ieE (1 B ) = Aqn i 1](1 B ) with = [e B 2L2 N AB w B,eff 2De e e De iC (1 B ) iB ihE + B ieE = ieE ( E + B ) = Aqn i2 = [e qVBE / kT 1]( E + B ) F N AB w B ,eff iB ( E + B) Large Signal BJT Model in Forward Active Region (FAR) (npn; with base width mod):
kT
1]
with
I BS
o BS
[1+
[e
1][1+ vCE ]
0.2V
(0) = (0) =
p Si
p Si
+ v BC
Si
2 1/ 2 1 2 Si qN A 2 p Si v BC x DT (v BC ) = * Cox * Inversion layer sheet charge density : q* = Cox [vGC VT (v BC )] N * Accumulation layer sheet charge density : q* = Cox [vGB VFB (v BC )] P +
]}
[2
p Si
v BC
qN A
Gradual Channel Approx. for MOSFET characteristics (n-channel; no channel length mod.):
e e * Cox [vGS VT (v BS )] 2
[vGS
1
0<
[vGS
*
Cox vGS VT (v BS ) Si +
v DS v DS 2
0 < v DS < v BS
[vGS
VT (v BS )]
VT (v BS ) VFB 1+
1 2 SiqN A 2 * Cox
1/ 2
]}
1/ 2
1 * Cox 2 2
Si
qN A v BS
p Si
C* ox
ox
t ox
Large Signal MOSFET Model in Saturation (FAR) (n-channel; with base width mod.):
iG (vGS ,v DS ,v BS ) = 0 iB (vGS ,v DS ,v BS ) 0 2 K iD (vGS ,v DS ,v BS ) = [vGS VT (v BS )] [1+ v DS ] 2 1 W * 2 p Si + * 2 SiqN A 2 with K e C ox and VT = VFB L Cox
p Si
v BS
]}
1/ 2
gd =
q IBS e
qVAB / kT kT
q ID kT
q Si N Ap 2(
d b
VAB )
d
and
with
[w
xp]
2De
IC VA
g =
gm
o
go
IC
b
or
2 wB = 2 Dminority .in base
C = gm
C = B - C depletion capacitance
gm
2K ID = K VGS - VT = gmb = gm = 2 K ID
go
Si
ID
or
ID VA
qN A q p VBS
Cgs =
2 * W L Cox Csb , Cgb , Cdb : depletion region capacitances 3 * * Cgd = W Cgd where Cgd is the gate - to - drain fringing and overlap capacitance per unit gate width
Voltage gain, Av gm Common emitter (= gm rl ') [ go + gl ] gm Common base (= gm rl ') [go + gl ] [ gm + g ] Emitter follower 1 [ gm + g + go + gl ] Emitter degeneration r - l (series feedback) RF [ gm G F ] g R Shunt feedback m F [ go + G F ]
MOSFET-based stages
Voltage gain, Av Common source Common gate Source follower Source degeneration (series feedback) Shunt feedback gm rl '
Current gain, Ai gl [ go + gl ] 1 gl [ go + gl ]
Input resistance, R i r
Output resistance, R o 1 ro = go
r + 1]
+ 1] ro rt + r [ + 1] ro
r + [ + 1] rl ' r + [ + 1] RF
gl GF
1 g + GF [1 Av ]
ro RF =
1 [go + GF ]
Current gain, Ai 1 gl GF
[ gm + gmb ] rl '
gm 1 [ gm + go + gl ] r - l
RF [ gm GF ] g R m F [ go + GF ]
OCTC/SCTC
1 1
OCTC estimation of
HI
HI i
[ i]
=
i
RiCi
with R i defined as the equivalent resistance in parallel with Ci , with all other parasitic device C's (C 's, C 's, C gs 's, C gd 's, etc.) open circuited.
1
SCTC estimation of
LO
LO
=
j
[R C ]
j j
with R j defined as the equivalent resistance in parallel with Cj, with all other biasing and coupling C's (C I 's, CO 's, C E 's, CS 's, etc.) short circuited.
Difference- and Common-mode signals Given two signals, v1 and v2, we can decompose them into two new signals, one (vC) that is common to both v1 and v2, and one (vD) that makes an equal, but opposite polarity, contribution to v1 and v2: vD v [v + v ] v D v1 v 2 and vC 1 2 v1 = vC + D and v 2 = vC 2 2 2 CMOS performance Transfer characteristic
VLO = 0, V HI = VDD , ION = 0, IOFF = 0 V Symmetry : VM = DD and N ML = N MH K n = K p and VTp = VTn 2 Minimum size gate : Ln = L p = Lmin , W p = ( n p )W n , W n = W min In general :
Disch arg e
assumes
=2
Ch arg e
Disch arg e
2 min
:Power disippation
Pave @ Max. f = CLV PDave @ Max. f =
2 DD
f max CLV
2 DD
Min.Cycle