I HC QUC GIA THNH PH H CH MINH TRNG I HC BCH KHOA

BO CO N MN HC

TI:
TNH TON THIT K MCH KCH MOSFET/IGBT

TP. HCM thng 6 nm 2008

MC LC Li ni u ...................................................................................................3 Phn I: Tnh gi tr t bootstrap ..............................................................4 I.1 S nguyn l mch s dng t bootstrap ..................................4 I.2 Tnh gi tr t bootstrap .................................................................4 I.3 Mt s lu ...................................................................................5 Phn II: Qu trnh kch ng IGBT ........................................................6 II.1 Gii thiu qu trnh kch ng .....................................................6 II.2 Phn tch qu trnh kch ng .......................................................7 Phn III: Qu trnh kch ngt IGBT ........................................................9 Phn IV: Tnh gi tr in tr kch ........................................................10 IV.1 in tr ti hn .........................................................................10 IV.2 in tr kch ng ....................................................................11 IV.3 in tr kch ngt .....................................................................12 Phn V: Thit k mch kch IGBT dng IC Driver IR2114 ................13 V.1 S khi ..................................................................................13 V.2 S nguyn l .........................................................................14 V.3 Mch in ......................................................................................15 V.4 Kt qu th nghim v nh gi ................................................17 Ti liu tham kho .....................................................................................20

Li ni u. Ngy nay, vi s tin b ca khoa hc trong ch to linh kin. MOSFET v IGBT cng sut khng nh v tr dn u trong ngnh bn dn cng sut. V c ng dng rng ri trong cc ng dng lin quan n ng ngt v khuych i cng sut. Mt trong nhng yu t gip MOSFET v IGBT c s dng nhiu l nh kh nng kch ng v kch ngt tn s cao kh d so vi cc linh kin khc nh BJT, TRIAC, GTO Trn th trng, c rt nhiu linh kin hoc module hon chnh dng kch MOSFET v IGBT. Trong c dng Driver SKHI, c bit n nh mt chun cng nghip v c s dng rng ri. IC SKHI s dng k thut bootstrap, l mt phng php cp ngun cho mch kch kh n gin v rt kinh t. Nhm n mc tiu lm ch phng php kch IGBT v p dng thc hin mch thay th IC SKHI, ti liu ny s cp n cc vn sau: Gii thiu mch cp ngun kiu bootstrap v cch tnh ton gi tr t bootstrap. Gii thiu v phn tch qu trnh ng ngt ca MOSFET v IGBT Cch tnh in tr kch ng v in tr kch ngt

I. TNH GI TR T BOOTSTRAP 1. S nguyn l mch s dng t bootstrap

4. Mch kch trong IC: dng tnh Iqbs v nng lng cn np chuyn t mc p thp ln mc p cao Qls 5. Kha tng cao: gm nng lng np cng Qg v dng r qua G-S: Ilk-GS 6. Kha tng thp: st p VCE-on 2. Tnh gi tr t bootstrap Nng lng ti thiu ca t CBS cung cp cho mch. QBSmin = (Qrr + Ilk-d.tHon) + (Ilk-c.tHon) + (Qls + Iqbs.tHon)+(Qg + Ilk-gs.tHon) Trong : tHon l thi gian ti a kha trn ng. 1 t Hon Tsw f sw Tuy nhin, ta c th tnh gn ng bng cch b qua cc i lng t nh hng n kt qu tnh. V gp i Qg m bo nng lng cho bt k kha no. Khi , cng thc tnh c rt gn l: QBSmin = (Qls + Iqbs.tHon) + 2Qg Khi t cp nng lng cho cc phn t ni trn, th in p trn t s st dn. ta gi Vmin l in p trn t (VBS) ti thiu mch hot ng. khi , thay i in p trn t trong lc kha tng cao ng l: VBS = VCC VF Vmin VCE-on Nh vy, m bo t hot ng n nh, gi tr np cho t phi c gp i gi tr trn. in dung ti thiu ca t bootstrap c tnh:

Hnh 1: Mch bootstrap Nh chng ta bit, vic cp ngun cho mch kch kha tng di nh bnh thng v im 0V ca ngun trng vi cc S ca kha (MOSFET). Tuy nhin, vn kh khn hn khi cp ngun mch kch kha tn trn, bi v in p cc S ca MOSFET tng trn khng c nh m thay i lin tc t gi tr -VDC n +VDC. Gii quyt vn ny c 2 cch. Mt l to ngun ring (cch ly) cho mch kch tng trn; hai l s dng k thut bootstrap. Phn sau y gii thiu v xc nh linh kin trong phng php bootstrap. Mch kch tng cao c cp ngun VBS bi t bootstrapb - CBS. Theo s trn, c 5 phn t nh hng n hot ng ca t CBS. Trong mi phn t , ta ch n cc thng s chnh sau: 1. in tr Rboot: thng ly gi tr bng khng. 2. Diode Dboot: in p thun VF , dng r Ilk-d v nng lng hi phc Qrr. 3. T bootstrap CBS: gi tr CBS cn tnh v dng r qua t Ilk-c

C BS min C BS min

2QBS min VBS 2[Qls I qbs .t Hon 2Qg ] VCC VF Vmin VCE on

C BS min

2[5.10 9 800.10 6.10 4 2.96.10 9 ] 15 1,7 10,3 2,7

C BS min 1,85.10 6 F 1,85F C BS 15C BS min 27,7F

Theo khuyn co ca cc hng, gi tr t bootstrap nn ly gp 15 ln gi tr ti thiu trn.

C BS 15C BS min

3. Mt s im lu : 1. T bootstrap phi c in tr ni (ESR) thp hn ch dng r, ta nn dng t Tanlalum hoc mc song song nhiu t gm. Nu s dng t Electrotithic th phi tnh n dng r. 2. Diode phi l loi fast recovery, c thi gian hi phc nh hn 100ns. in p ngc ca diode phi ln hn ngun cung cp cho kha. Dng qua diode c tnh: IF =QBSmin*fsw V d: Ta tnh gi tr t bootstrap cho IC Driver IR2114 kch IGBT 12N60A. Qls = 5nC (5nC khi in p kha 600V, 20nC khi p kha 1200V) Iqbs = 800 A (datasheet IR2114) tHon = 1/fsw = 1/10KHz = 10-4s (mch kch tn s 10KHz) Qg= 96nC (datasheet 12N60A) VCC=15V VF=1.7V (datasheet UF4007) Vmin=10.3V (datasheet IR2114) VCE-on =2.7V (datasheet 12N60A) Th vo cng thc trn, ta c:

II. HOT NG KCH NG IGBT 1. Gii thiu qu trnh kch ng IGBT c xem l s ghp ni gia MOSFET v BJT, do n c c u im l kch ng hoc kch ngt bng in p, v st p khi dn in thp. V vy hot ng kch ng v kch ngt ca IGBT hon ton nh ca MOSFET. V y s dng i din l MOSFET. Vic phn tch cho IGBT hon ton tng t, ta ch vic ln lc i tn cc D & S ca MOSFET thng cc C & E ca IGBT. Hnh 4: Dng in p VGS khi kch ng. Phn 1: Np t CGS Phn 2: Np t CGD do hiu ng Miller Phn 3: Np ti gi tr nh ca p kch Ta s phn tch qu trnh t khi c in p kch n khi MOSFET ng hon ton mt cch chi tit qua 4 thi k, l mt th in p VGS theo thi gian Qu trnh kch MOSFET c chia lm 3 phn chnh.

Hnh 2: M hnh IGBT Hnh sau gip ta d hnh dung s nh hng ca cc t k sinh trong qu trnh kch.

Hnh 5: 4 giai on ca kch ng.

Hnh 3: Cc t k sinh trong MOSFET

im cui ca 4 thi k tng ng l 1. VT (t=t1): in p ngng (threshold) 2. VPL (t=t2): in p u dc do hiu ng Miller 3. VPR (t=t3): in p cui dc 4. VDR (t=t4): in p nh ca ngun kch. Song song vi s thay i ca in p VGS trn, gi tr dng in np IGS, in p mng ngun VDS v dng in IDS cng c s thay i tng ng, c trnh by trong hnh sau:

2. Phn tch qu trnh kch ng. 1. T zero n VTH VGS tng t 0 n VTH iGS gim t gi tr max iD =0 vDS khng i in p Vgs trong tm 0 n VTH. Ti thi im t=0, cc G c cp ngun v in p vgs bt u tng, lc ny hu ht dng qua cc G u np cho t CGS. Tht ra, cng c mt lng nh dng np qua t CGD v t ny c gi tr nht nh, nhng do t CGS>>CGD nn c th xem y l thi k np cho t CGS Giai on ny cn c gi l ON_delay, bi v c dng in v in p qua mng ngun vn cha thay i. lc ny MOSFET vn ang trng thi ngt (OFF) 2. T VT n VPL VGS tng t VT ti vPL igs gim iD tng nhanh vDS bt u gim Giai on 2 ny l giai on u ca MOSFET khi chuyn t trng thi ngt sang ng. in p ngng VT c nh ngha l in p VGS lc dng iD bt u chy t cc mng D n cc ngun S. Lc ny VDS bt u gim nn VGD tng (VGD=VGS-VDS). Ta c: dq d (C.v) i dy dt Kt qu l dng np chy qua t CGD nhiu hn so vi giai on 1,

Hnh 6: S lin quan gia cc thng s trong qu trnh kch ng.

trong khi dng np t CGS vn khng i. Theo hnh ta thy, dng in qua cc G vn tuyn tnh vi in p vGS trong 2 giai on u. 3. T VPL n VPR vGS tng t VPL n VPR iD t gi tr max vDS gim nhanh n VDS(ON) y l giai on sau ca vic kch ng v MOSFET gn nh dn hon ton. Trong giai on ny, p vDS gim nhanh khin VGD tng nhanh. Dn n dng np t qua CGS m ch yu l qua CGD theo biu thc i=d(C.v)/dt. iu ny gii thch ti sao p VGS tng rt chm, hoc thm ch l mt ng nm ngang nu tch s (C.v) tng nhanh. Dng mng ngun tng n gi tr ti a v dng li . Gi tr max ny ph thuc vo thng s ti. n cui giai on, in p vDS t gi tr ID*RDS(ON) v ngng gim, lm CGD ngng tng. 4. T VPR n VDR VGS tng t vPR n vDR iD l hng s gi tr max vDS l hng s gi tr min Giai on hon thin mt chu k kch ng MOSFET v khng c g thay i ln. ln VGS tng ti gi tr cui cng l p kch VDR ca IC Driver. Trong khi dng np chia cho c 2 t CGS v CGD th iD khng i, vgs gim nh do in tr RDS(ON) gim nh.

Nh vy, vic kch ng ca MOSFET trong chuyn mch cng th nh hng ca hiu ng Miller rt ln. V do , vic kch MOSFET khng n thun l kch bng p na, m dng kch cng nh hng nhiu n tc kch ng ca kha.

III. HOT NG KCH NGT IGBT Hot ng kch ngt din ra ngc li vi qu trnh kch ng nn y khng phn tch na, ch lu l qu trnh ny cng bao gm 4 giai on. bt u vi: VGS bng p kch (VDR) IG bng 0 VDS bng VDS(ON)=ID*RDS(ON) ID ph thuc ti 4 giai on c trnh by trong hnh sau:

Hnh 7: S lin quan gia cc thng s trong qu trnh kch ngt. Tm li, c th chia qu trnh kch ng v kch ngt IGBT thnh 4 giai on m di ca mi gian on ny ph thuc vo cc gi tr t in lin quan.

IV. TNH GI TR IN TR KCH 1. in tr ti hn Phn trc ta tm hiu s qua vic a nng lng vo MOSFET nh th no MOSFET ng ngt. Vic cp nng lng hay chnh xc hn l cp dng in cho MOSFET c gii hn, v gii hn ny c quyt nh bi in tr kch Rg (Gon v Goff).

Ta c th s dng s thay th sau phn tch :

Hnh 10: s thay th mch kch. s ta thy c thm phn t in cm LS, bi v t mch kch n cc kha ta phi c ng dy dn, v in cm sinh ra bi ng dy ny. (Theo EMC th ta c th c lng cho ng i trong mch in l khong 2nH/1cm) Theo l thuyt mch, in p trn t CISS khng b dao ng th gi tr in tr RG phi ln hn hoc bng in tr ti hn. LS RTH 2 CISS Trong , RG l in tr tng, bao gm in tr ng ra RDR ca Driver v in tr kch mnh cn tnh Rg. RG = RDR + Rg CISS l t in ng vo, c tnh: CISS = CGS + CGD

Hnh 8: qu trnh kch ng.

Hnh 9: qu trnh kch ngt. Trn hnh 8 v hnh 9 c t in Ceff, l gi tr t in quy i ca tt c cc t lin quan n qu trnh kch ng v kch ngt.

Do , kch ng v kch ngt c n nh, ta cn c: RG RTH Tuy nhin, thc t in cm ng dy LS thng nh, dn n RTH cng nh (khong vi Ohm), nn khi chn in tr kch RG cn phi quan tm n dng in cho php ca mch Driver. Phn sau s gii thiu cch tnh in tr kch c xt n kh nng chu dng ca IC Driver.

2. in tr kch ng Nh thy phn trn, dng in qua cc G v in p VGS khng c phng trnh nn khng th tnh in tr kch mt cch chnh xc. Thc t c nhiu cch tnh theo nhiu hng. y xin trnh by mt phng php n gin nhng hiu qu c hng IR Rectifier gii thiu nh sau: Gi IAV l dng kch trung bnh, tsw l thi gian chuyn mch t lc bt u a p kch n khi MOSFET ng, tc t thi im t=0 n t=t3 trong phn phn tch dng p kch (Hnh 5) ni trn. Ta c: Qg = IAV*tsw Ta dng Qg ch khng phi (Qgs+Qgd) nh trn hnh 4 v hnh 5 v thc t cc linh kin cng tn thng chnh lch nhau cht t. V nng lng cn np m bo y cho vic kch c khuyn co l Qg.
VCC VP RG VP l in p ngng do hiu ng Miller, bng gi tr trung bnh ca vgs trong khong (t=t2t3). l mt thng s quan trng ca MOSFET v c cung cp trong datasheet di dng th nh sau:

Hnh 11: VGS theo nng lng np. Lu l tsw ln hay nh ph thuc vo dng kch, tsw cng nh th thi gian chuyn mch cng nhanh v tn hao trn linh kin cng gim. bi vy tsw thng c chn theo tiu ch thit k v ph hp tn s sng mang. Mt gi tr tsw c nh gi l rt tt khi s dng IC driver kch kha: tsw = (34) (td(on) + tr) Vi td(on) v tr l nhng thng s ca MOSFET c cho trong datasheet. T cc biu thc trn, ta c: V VP Qg CC t sw RG Suy ra: (V VP )t sw RG CC Qg Nhc li: RG = Rg + RDR
I OUT ,DR IOUT,DR l dng in ti a m IC Driver c th kch c, c cho trong datasheet ca IC Driver. Vy, gi tr in tr kch c xc nh: RDR VCC

Vi: I AV

Rg = RG RDR

3. in tr kch ngt. Thng thng IC Driver c cung cp chn kch ng v kch ngt ring bit. Khi in tr kch ng vn c tnh nh trn, cn in tr kch ngt nn c chn vi gi tr nh hn bi 2 nguyn nhn: Th nht: vic kch ngt xy ra nhanh hn, gip gim DeadTime. n gin, ta c th s dng gi tr in tr kch ngt bng vi gi tr in tr ti hn. Th hai: khi kha di ngt, kha trn ng, th in p ng ra (ti im gn vi ti) s chuyn t mc thp ln mc cao ca ngun cng sut trong thi gian ngn. Tc l dV/dt c gi tr ln. Ta c:
dV dt Ta cn tnh sao cho Vge < VT ca kha. Vy: VT Rgoff RDR dV C RESoff . dt Vge ( Rgoff RDR ) C RESoff

Ni chung, thc hin mt mch kch th vic chn gi tr in tr kch ph hp l rt quan trng, n nh hng n hiu sut ca mch v trnh c nhiu h hng khc.

Hnh 12. Dng in khi kha di ngt v kha trn ng. Khi s c dng in chy qua CRESoff, Rgoff v RDR. dV i C RESoff Do: dt Nu dng in ny ln v st p trn cc G cao hn in p ngng ng (VT) ca kha, th kha c th t ng mc d c iu khin kch ngt. Trng hp ny nguy him cho linh kin v cho ngun cng sut v n ging nh hin tng ng dn. Nh vy: Vic gim in tr kch ng s gii lm gim st p trn cc G ca kha di.

V. THIT K MCH KCH IGBT S DNG IC DRIVER IR2114 IR2114 l mt trong nhng dng Driver cho MOSFET v IGBT, c sn xut bi International Rectifier. L mt trong nhng Driver dng cho tm cng sut trung bnh vi nhiu chc nng nh: Hot ng vi in p cng sut 600V. Kh nng chuyn mch (kch ngt) mm khi c s c qu dng. ng b tn hiu vi cc chopper khc. Tch hp DeadTime. Chng qu p v thp p. 1. S khi:

Hnh 13: s khi IR2114 S c 4 phn chnh 1. Phn giao tip vi vi x l. 2. Phn bootstrap. 3. Phn kch IGBT tng di v tng trn. 4. Phn hi tip in p VC ca IGBT bo v qu dng. p dng l thuyt phn tch phn trc tnh gi tr t bootstrap, in tr kch ng v in tr kch ngt. Ta c s nguyn l v gi tr linh kin nh sau:

2. S nguyn l.

Hnh 14: s nguyn l mch kch c cch ly.

Chi tit linh kin

STT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 K hiu C1 C2 C3 C4 C5 C6 C7 C8 D1 D2 D3 IGBT1 IGBT2 L1 Tn Linh Kin 22uF tantalum 121p 121p 102p 104p ceramic 104p 104p 104p UF4007 UF4007 UF4007 12N60A 12N60A Led ghi ch t bootstrap STT 15 16 17 18 19 20 21 22 23 24 25 26 27 28 K hiu R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 U1 U2 U3 Tn Linh Kin 33 3.3 220 33 3.3 220 1K 1K 10K 10K 1K IR2114 TLP2200 TLP2200 ghi ch Ron Roff Rshutdown Ron Roff Rshutdown

t restar/reset t bootstrap

fast recovery fast recovery fast recovery

opto opto

3. Mch in. Thit k mch in dng chng trnh Proteus.

Hnh 15: layout IR2114

Sau khi gn linh kin y :

Hnh 16: board mch hon chnh.

Sau khi gn board vo hp my:

Hnh 17. Gn board vo thit b. Sn phm hon chnh: Hnh 18. Sn phm hon chnh.

4. Kt qu th nghim. a. thi gian lan truyn tn hiu: + thi gian lan truyn qua Opto TLP2200: Thi gian t lc xung dng ng vo n lc xut hin xung dng ng ra ca opto o c l 120ns. y chnh l thi gian tr khi qua opto. Gi tr ny kh nh chng t opto c thi gian p ng nhanh v tt. (240ns)

Hnh 19: Thi gian lan truyn qua Opto TLP2200 + Thi gian lan truyn qua IC Driver: L thi gian tnh t lc c xung dng ng vo n khi c xung dng ng ra ca IR2114. Th nghim o c l 290 ns. (380ns) Nhn xt: thi gian lan truyn qua IC nhanh, vi tc ny c th m bo mch kch vi tn s ln n hng trm KHz

Hnh 20: Thi gian lan truyn qua IC Driver IR2114.

b. Thi gian chuyn mch ca IGBT + Thi gian kch ng IGBT: L thi gian tnh t khi c xung kch ng (xung dng) n khi dng in qua IGBT t gi tr max (xc nh theo ti). Kt qu th nghim: 2.6 micro giy (10.6us) Nhn xt: thi gian chuyn mch rt nhanh, ch cha y 3 micro giy, y l thi khong thi gian cc tt. N gip tn hay cng sut trn linh kin gim v c th y nhanh tn s sng mang ln cao

Hnh 21: thi gian ON ca IGBT. + Thi gian kch ngt IGBT: L thi gian tnh t khi c xung kch ngt (xung m) n khi dng in qua IGBT at gi tr min (Imin = 0). Kt qu th nhim l 2,9 micro giy. Nhn xt: Thi gian kch ng lu hn thi gian kch ngt mt t. iu ny hon ton ph hp vi thng s a ra ca nh sn xut. Nhn chung, vi thi gian kch ngt cng cha n 3 micro giy l kt qu ht sc kh quan.

Hnh 23: thi gian OFF ca IGBT

c. Kt lun v nh hng ca thi gian lan truyn v thi gian chuyn mch. Kt qu th nghim cho thy: h s lan truyn ca mch nh, thi gian kch ng v kch ngt ca IGBT cng nh. l nhng mong mun cho mt sn phm tt. d. Mt s kt qu khc: + dng in p kch IGBT tng di: thi gian kch l 510ns, mt kt qu cng rt tt.

+ dng in p kch IGBT tng cao: thi gian kch l 650ns. Lu hn mt t so vi tng di v in p kch thp hn (do st p trn diode bootstrap). Nhng 650ns l mt kt qu tt. (370ns)

+ dng sng in p trn t Bootstrap:

Nhn xt: p trn t Bootstrap l mt ng thng nm ngang, iu ny chng t phng php cp ngun bng k thut bootstrap hiu qu. Nhn chung mch kch IGBT lm vic vi nhng kt qu o c trn l cc k n tng. Tuy nhin, do th nghim in p ngun DC thp nn kt qu trn cha chnh xc. Theo l thuyt phn tch phn trc th khi dng in p cao hn, thi gian kch IGBT s nhanh hn, nhng khng nhiu lm. Ti liu tham kho 1. DT 98-2a. Bootstrap Component Selection For Control ICs. By Jonathan Adams 2. DT 04-4. Using monolithic high voltage gate drivers. By A.Merello 3. APT0201. IGBT Tutorial. By Jonathan Dodge .P.E and Jone Hess 4. APT0103. Making Use of Gate Information in MOSFET and IGBT Data Sheets. By Ralph McArthur 5. Slup 169. Design And Applycation Guide For High Speed MOSFET Gate Drive Ciruits. By Laszlo Balogh