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KHOA |N 1U - v|N 1HNG

8 MN | N 1U








C U K|N |N 1U




8|n scon: Du Quong 8nh













A NNG 998
CU KIN IN T 1
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN
CHNG 1. VT L BN DN

1.1 VT LIU IN T :
Cc vt liu in t thng c phn chia thnh ba loi: Cc vt liu cch in, dn in v vt
liu bn dn.
Cht cch in l loi vt liu thng c dn in rt km di tc dng ca mt ngun
in p t vo n.
Cht dn in l loi vt liu c th to ra dng in tch khi c ngun in p t ngang qua
hai u vt liu.
Cht bn dn l mt loi vt liu c dn in khong gia ca cht dn in v cht cch
in
Thng s chnh c dng phn bit 3 loi vt liu l in tr sut , c n v l .cm.
Nh ch r bng 1.1, cc cht cch in c in tr sut ln hn cm . 10
5
. v d: kim cng
[diamond] l mt trong nhng cht cch in tuyt vi, n c in tr sut rt ln: .cm 10
16
.
Ngc li, ng nguyn cht [pure copper] l mt cht dn in tt, c in tr sut ch l
.cm 10 3
6

x .
Cc vt liu bn dn chim ton b khong in tr sut gia cht cch in v cht dn in;
ngoi ra, in tr sut ca vt liu bn dn c th c iu chnh bng cch b sung thm cc
nguyn t tp cht khc vo tinh th bn dn.
Bng 1.1, cng cho bit cc gi tr in tr sut in hnh ca 3 loi vt liu c bn. Mc d
trong thc t chng ta lm quen vi tnh dn in ca ng (ng nguyn cht) v tnh
cch in ca mica, nhng cc c tnh in ca cc vt liu bn dn nh Gemanium (Ge) v
Silicon (Si) c th cn mi l, d nhin, vt liu bn dn khng ch c hai loi vt liu ny,
nhng y l 2 loi vt liu c s dng nhiu nht trong s pht trin ca dng c bn dn.

BNG 1.1 Phn loi c tnh dn in ca cc vt liu bng cht rn
Cht dn in Cht bn dn Cht cch in
cm . 10
3

< cm . 10 10
5 3
< <

< .cm 10
5

Gi tr in tr sut ca cc cht in hnh
cm . 10 3
6

= x cm . 50 = (germanium) cm . 10
12
= (mica)
(ng ng. cht) .cm 10 50
3
x = (silicon) cm . 10
16
= (kim cng)

Cc cht bn dn c to thnh t hai loi: Cc cht bn dn n cht l cc nguyn t thuc
nhm IV ca bng tun hon cc nguyn t ha hc, (bng 1.2). Mt khc, cc cht bn dn hp
cht c th c hnh thnh t cc nguyn t nhm III v nhm IV (thng gi l hp cht 3-5),
hay nhm II v nhm VI (gi l hp cht 2-6). Cht bn dn hp cht cng bao gm 3 nguyn
t, chng hn nh: Thy ngn-Cadimi-telurit [mercury- cadmium-telluride]; Ga-Al-As [gallium-
aluminum-arsenic]; Ga-In-Ar [gallium-indium-arsenic]; v Ga-In-P [gallium-indium-
phosphide]. Theo lch s ch to cc linh kin bn dn th Ge l mt trong nhng cht bn dn
u tin c s dng. Tuy nhin, Ge c thay th mt cch nhanh chng bi Si dng
ch to cc dng c bn dn quan trng nht hin nay.
Silicon c mc nng lng rng vng cm (E
g
) ln hn so vi Ge (xem bng 1.3) nn cho
php s dng cc linh kin bn dn c ch to t Si nhit cao hn v s d xi ha
hnh thnh nn mt lp xit cch in n nh trn bn dn Silicon lm cho vic gia cng, x l
trn Si khi ch to cc vi mch (ICs) d dng hn nhiu so vi Ge. Tuy vy, Ge vn c trong
cc cu kin bn dn hin i nhng hn ch hn nhiu so vi Si v mt s cht bn dn khc.
Ngoi cht bn dn bng Silicon c dng nhiu, cn c cc cht bn dn nh: GaAr [gallium-
arsenic] v InP [Indium-phosphide] l nhng cht bn dn thng dng hin nay, l nhng vt
liu quan trng nht trong vic ch to cc cu kin quang in t nh: diode pht quang (LED),
cng ngh Laser v cc b tch sng quang . v. v. . .

CU KIN IN T 2
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

Bng 1.3 Gii thiu mt s cht bn dn thng c s dng nhiu nht ch to cc linh
kin bn dn.
BNG 1.3 Cc vt liu bn dn
Cht bn dn
G
E (eV) Cht bn dn
G
E (e
V)
Kim cng (diamond) 5,47 Gallium arsenide 1,42
Silicon 1,12 Indium phosphide 1,45
Germanium 0,66 Boron nitride 7,50
Thic (tin) 0,082 Silicon carbide 3,00
Cadimium selenide 1,70
Kim cng v Boron Nitride l nhng cht cch in tuyt vi nhit phng, nhng chng
cng nh Silicon Carbide c th c dng nh nhng cht bn dn nhit rt cao ( C
o
600 ).
Vic b sung mt t l nh ( < 10 % ) Ge vo Si s lm cho c tnh ca cc dng c bn dn
thng thng c ci thin.
1.2 M HNH LIN KT NG HA TR
Trong cc cht, cc nguyn t c th lin kt vi nhau di 3 dng cu trc nh: V nh hnh
[amorphous]; a tinh th [polycrystalline] v n tinh th [single-crystal].
Cc vt liu v nh hnh c cu trc hon ton khng c trt t (hn n), ngc vi vt liu a
tinh th bao gm mt s lng ln cc tinh th khng hon chnh nh kt hp li.
Mt loi vt liu bt k ch c duy nht cc cu trc tinh th lp li (tun hon) ca cng mt
loi nguyn t c gi l cu trc n tinh th. Nhiu c tnh rt hu ch ca cc cht bn dn
u c tm thy cc vt liu n tinh th dng nguyn cht cao, chng hn nh: Silicon
CU KIN IN T 3
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

thuc nhm IV ca bng tun hon cc nguyn t ha hc, c bn in t (electron) lp ngoi
cng, gi l 4 in t ha tr.
Vt liu n tinh th c hnh thnh bng lin kt ng ha tr ca mi nguyn t Silicon vi 4
nguyn t Si ln cn gn nht di dng khi khng gian ba chiu rt u n nh hnh 1.1.
n gin, ta ch xt cc m hnh lin kt ng ha tr dng hai chiu nh hnh 1.2.
S lin kt bn vng gia cc nguyn t bng cc in t ha tr gp chung c gi l lin kt
ng ha tr.
Mc d lin kt ng ha tr l lai lin kt mnh gia cc in t ha tr v nguyn t gc ca
chng nhng cc in t ha tr vn c th hp th nng lng ng k t t nhin b gy cc
lin kt ng ha tr v to ra cc in t trng thi t do. Thut ng t do ni ln rng s di
chuyn ca cc in t l rt nhy cm di tc dng ca in trng do mt ngun in p hay
s chnh lch no v th hiu; cc nh hng ca nng lng nh sng di dng cc
photon; nng lng nhit t mi trng xung quanh. nhit phng, trong mt cm
3
vt liu
bn dn Si nguyn cht c khong
10
10 ht ti in t do [free carrier]. Cc in t t do trong vt
liu bn dn do bn cht tng t nh cc ht ti in c bn. Cng ti nhit phng, trong
mt cm
3
vt liu Ge nguyn cht c khong
13
10 5 , 2 x ht ti in t do. T l v s lng cc
ht ti in t do ca Ge i vi Si ln hn
3
10 ln, iu ny s ni ln rng Ge c dn in
tt hn nhit phng, mc d vy c hai loi Ge v Si u c dn in rt km trng
thi c bn. Lu bng 1.1, in tr sut ca Si v Ge cng chnh lch mt t l 1000:1, trong
Si c in tr sut ln hn, iu ny l tt nhin, v in tr sut t l nghch vi dn in.
Khi tng nhit mt cht bn dn ln trn khng tuyt i (
0
K) th s lng cc in t
ha tr do hp th nng lng nhit ng k b gy cc lin kt ng ha tr tng ln, lm
tng dn in v cht bn dn c in tr thp. Do vy, cc vt liu bn dn nh Ge v Si s
c in tr gim khi nhit tng tc l c h s nhit m. iu ny khc vi cc cht dn
in v in tr ca nhiu cht dn in tng theo nhit do s lng cc ht ti in trong cht
dn in l khng tng ng k theo nhit , nhng chng s dao ng xung quanh v tr c
nh lm cn tr s di chuyn ca cc in t khc, tc l lm cho in tr tng ln nn i vi
cc cht dn in c h s nhit dng. Nh vy, nhit gn 0 tuyt i, ton b cc
in t nh v trong cc mi lin kt ng ha tr gp chung gia cc nguyn t theo dng
mng v khng c in t t do tham gia vo qu trnh dn in. Lp ngoi cng ca nguyn
CU KIN IN T 4
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

t l y v vt liu ging nh mt cht cch in.
Khi tng nhit , th nng lng nhit s c b sung vo tinh th, lc ny mt vi lin kt s
b b gy, gii phng mt lng nh in t cung cp cho vic dn in, nh hnh 1.3.
Mt cc in t t do ny c gi l: mt cc ht ti in c bn
i
n [intrinsic carrier
density] (
3
cm

) v c xc nh ty theo c tnh ca vt liu v nhit nh sau:


=
kT
E
BT n
G 3 2
i
exp cm
-6
(1.1)
trong :
G
E l mc nng lng rng vng cm ca cht bn dn, n v o l eV; k l hng
s Boltzmann,
5
10 x 62 8

, (eV/ K); T l nhit tuyt i (
o
K); B l thng s ty thuc vt liu,
CU KIN IN T 5
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

chng hn, i vi Si th B =
31
10 x 08 1, (K
-3
. cm
- 6
).
Mc nng lng vng cm
G
E [bandgap energy] l mc nng lng ti thiu cn thit b gy
mt mi lin kt trong tinh th bn dn gii phng mt in t cho qu trnh dn in. Bng
1.3 trn lit k cc gi tr mc nng lng vng cm ca mt s cht bn dn khc nhau.
Mt cc in t t do c biu din bng k hiu n ( s electron / cm
3
), v i vi vt liu
nguyn cht
i
n n = . Mc d
i
n l mt c tnh c bn ca mi cht bn dn nhng n ph thuc
rt nhiu vo nhit i vi tt c cc vt liu. Hnh 1.4 ch r s thay i mnh ca mt ht
ti in c bn theo nhit ca Gemanium, Silicon, v Gallium Arsenide, tnh t biu thc
(1.2) vi
6 3 30
cm . K 10 31 , 2

= x B cho Ge v
6 3 29
cm . K 10 27 , 1

= x B cho GaAr.
V d 1.1: Hy xc inh gi tr ca
i
n ca Si nhit phng (300K) ?
( )( )
( )( )
6 19
5
3 6 3 31 2
i
cm / 10 52 , 4
K 300 K / eV 10 62 , 8
12 , 1
exp K 300 cm . K 10 08 , 1 x
x
x n =


=


hay
3 9
i
cm / 10 73 , 6 x n =
n gin trong tnh ton, ta ly gi tr
3 10
cm / 10
i
n nhit phng i vi Si.
Mt cc nguyn t silicon trong mng tinh th vo khong
3 22
/ 10 5 cm x , so snh vi kt qu
v d 1.1, trn, suy ra rng: nhit phng, trong s xp x
13
10 nguyn t Si, th ch c mt
mi lin kt b b gy.
Mt loi ht ti in khc thc t cng c to ra khi lin kt ng ha tr b b gy nh hnh
1.3. Khi mt in t mang in tch m C 10 602 , 1
19
= x q , di chuyn ra khi lin kt ng ha
tr, th n s li mt khong trng [vacancy] trong cu trc lin kt bn cnh nguyn t silicon
gc. Khong trng phi c in tch hiu dng dng: +q . Mt in t t lin kt ln cn c th
in vo khong trng ny v s to ra mt khong trng mi v tr khc. Qu trnh ny lm
cho khong trng di chuyn qua khp cc mi lin kt trong mng tinh th bn dn. Khong
trng di chuyn ging nh ht tch in c in tch +q nn c gi l l trng [hole]. Mt
l trng c k hiu l p (l trng / cm
3
).
Nh vy, c hai loi ht tch in c to ra ng thi khi mi lin kt b b gy: mt in t
v mt l trng, do i vi bn dn silicon nguyn cht ta c:
p n n
i
= = (1.2)

2
i
n np = (1.3)
Tch pn cho (1.3) ch ng vi iu kin mt cht bn dn iu kin cn bng nhit, m
trong , cc c tnh ca vt liu bn dn ch ph thuc vo nhit T, m khng c cc dng
kch thch khc. Phng trnh (1.3) s khng ng i vi cc cht bn dn khi c cc kch thch
ngoi nh: in p, dng in hay kch thch bng nh sng.
1.3 IN TR SUT CA BN DN SILICON NGUYN CHT.
a) Dng tri trong cc cht bn dn.
in tr sut: v i lng nghch o ca in tr sut l in dn sut [conductivity]: l
c trng ca dng in chy trong vt liu khi c in trng t vo. Di tc dng ca in
trng, cc ht tch in s di chuyn hoc tri [drift] v to thnh dng in c gi l dng
tri [drift current].
Mt dng tri j c nh ngha nh sau:
Qv j = (C/cm
3
)(cm/s) = A/cm
2
(1.4)
trong : Q l mt in tch; v l vn tc ca cc in tch trong in trng.
tnh mt in tch, ta phi kho st cu trc ca tinh th silicon bng cch s dng c hai
m hnh lin kt ng ha tr v m hnh vng nng lng trong cc cht bn dn.
i vi vn tc ca cc ht ti in di tc dng ca in trng ta phi xt linh ng ca
cc ht ti in.
b) linh ng. [mobility]
Nh trn xt, cc ht ti in trong cc cht bn dn di chuyn di tc dng ca in trng
CU KIN IN T 6
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

t vo cht bn dn. S chuyn ng ny c gi l s tri v to thnh dng in chy trong
cht bn dn c hiu l dng tri. Cc in tch dng tri cng chiu vi chiu ca in
trng, ngc li cc ht mang in tch m tri theo hng ngc vi chiu ca in trng.
Vn tc tri ca cc ht ti in v
r
(cm/s) t l vi in trng E
r
(V/cm); hng s t l c gi
l linh ng , ta c:
E v
r
r
n n
= v E v
r
r
p p
= (1.5)
trong :
n
v
r
l vn tc ca cc in t (cm/ s);
p
v
r
l vn tc ca cc l trng (cm/s);
n
l linh ng ca in t, v c gi tr bng 1350 cm
2
/V.s bn dn Si nguyn cht.
p
l linh ng ca l trng, v c gi tr bng 500 cm
2
/V.s bn dn Si nguyn cht.
Do quan nim, cc l trng ch xut hin ti v tr khi di chuyn qua cc mi lin kt ng ha
tr, nhng cc in t l t do di chuyn trong khp mng tinh th, v vy, c th hiu l linh
ng ca l trng thp hn so vi linh ng ca in t, nh biu th nh ngha trong biu
thc (1.5). Ch rng: quan h (1.5) s khng ng ti cc mc in trng cao i vi tt
cc cc cht bn dn bi do vn tc ca cc ht ti in s t ti mt gii hn gi l: vn tc
tri bo ha
sat
v . i vi bn dn Si,
sat
v vo khong 10
7
cm/s, khi in trng vt qu
3x10
4
V/cm.
c) in tr sut ca bn dn Si sch.
n gin cho vic xc nh mt dng tri ca in t v l trng, ta gi s dng chy theo
mt chiu trnh k hiu vc t phng trnh (1.4), ta c:
E qn E qn v Q j
n n n n
drift
n
) )( ( = = =
E qp E qp v Q j
p p p p
drift
p
) )( ( = + + = = A/cm
2
(1.6)
trong : ) ( qn Q
n
= v ) ( qp Q
p
+ = l mt in tch ca in t v l trng (C/cm
3
) tng
ng. Tng mt dng tri s l:
E E p n q j j j . ) (
p n p n
drift
T
= + = + = A/cm
2
(1.7)
T phng trnh ny s xc nh dn in :
) .(
p n
p n q + = (.cm)
-1
(1.8)
i vi bn dn Si nguyn cht, th mt in tch ca in t c cho bi
i
qn Q =
n
mt
khc mt in tch ca cc l trng l
i p
qn Q + = .
Thay cc gi tr ca linh ng ca bn dn Si nguyn cht cho phng trnh (1.5), ta c:
6 10 10 19
10 96 , 2 ) 500 )( 10 ( ) 1350 )( 10 )[( 10 60 , 1 (

= + = x x (.cm)
-1

T nh ngha in tr sut chnh l nghch o ca in dn sut , do vy i vi bn dn
Si nguyn cht ta c:
CU KIN IN T 7
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN


5
10 38 3
1
= = ,

(.cm) (1.9)
Tra theo bng 1.1, ta thy rng bn dn Si sch c th c c tnh nh mt cht cch in, mc
d gn bng vi mc di ca khong in tr sut ca cht cch in.
1.4 BN DN TP CHT.
a) Cc tp cht trong cc cht bn dn.
Trong thc t, cc u im ca cc cht bn dn th hin r khi cc tp cht c b sung vo
vt liu bn dn nguyn cht, mc d vi mt t l rt thp tp cht nhng cht bn dn mi
c to thnh c ngha iu chnh c tnh dn in ca vt liu rt tt. Qu trnh nh vy
CU KIN IN T 8
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

c gi l s pha tp, v vt liu to thnh gi l bn dn tp.
S pha tp tp cht s cho php lm thay i in tr sut ca vt liu trong mt khong rt rng
v nh r hoc nng in t hoc nng l trng s iu chnh in tr sut ca vt liu.
y ta xt s pha tp vo bn dn Si nguyn cht mc d s pha tp ny cng c s dng
ging nh i vi cc vt liu khc. Cc tp cht thng c s dng nhiu l cc nguyn t
thuc nhm III v nhm V ca bng tun hon cc nguyn t ha hc.
* Cc tp cht Donor trong bn dn Si.
Cc tp cht Donor dng pha tp vo bn dn Si c ly t cc nguyn t thuc nhm
nguyn t thuc nhm V, c 5 in t ha tr lp ngoi cng. Cc nguyn t thng c s
dng nht l Phosphorus, Arsenic v Antimony. Khi mt nguyn t donor thay th mt nguyn
t Silicon trong mng tinh th nh m t hnh 1.5, th 4 trong s 5 in t ca lp ngoi cng
s in y vo cu trc lin kt ng ha tr vi mng tinh th Silicon, in t th 5 lin kt
yu vi nguyn t donor nn ch cn mt nng lng nhit rt b n d tr thnh in t t do.
Nh vy, nhit phng, ch yu mt nguyn t donor ng gp mt in t t do cho qu
trnh dn in, do mi nguyn t donor s tr nn b ion ha v mt mt in t v s
mang in tch +q, tng ng nh mt in tch c nh, khng dch chuyn trong mng tinh
th.
* Cc tp cht Acceptor trong bn dn Si.
Cc tp cht Acceptor dng pha tp vo bn dn Si c ly t cc nguyn t thuc nhm III,
nu so snh s in t lp ngoi cng, th nguyn t nhm III t hn mt in t. Nguyn t
Boron l tp cht chnh thay th nguyn t Si ttong mng tinh th nh hnh 1.6(a). Do nguyn t
Boron ch c 3 in t lp ngoi cng nn s tn ti mt khong trng trong cu trc lin kt.
Khong trng ny d cho mt in t bn cnh di chuyn vo, to ra mt khong trng khc
trong cu trc lin kt. Khong trng ny c gi l l trng c th di chuyn qua khp mng
tinh th nh m t hnh 1.6(b) v (c) v l trng c th n gin xem nh mt ht tch in c
in tch +q. Mi nguyn t tp cht s tr thnh ion do n nhn mt in t c in tch - q ,
khng di chuyn trong mng nh hnh 1.6(b).
b) Nng in t v l trng trong bn dn tp.
i vi bn dn tp bao gm c tp cht donor v acceptor th vic tnh nng in t v l
trng c xt nh sau:
Trong vt liu bn dn c pha tp, nng ca in t v l trng l rt chnh lch. Nu n
> p , th vt liu bn dn c gi l bn dn tp dng n, v ngc li nu p > n, th vt liu
c gi l bn dn tp dng p. Ht ti in c nng ln hn c gi l ht ti in a s, v
ht ti c nng thp hn c gi l ht ti in thiu s.
tnh ton chi tit mt in t v l trng, ta cn phi bit nng cc tp cht acceptor v
donor :
D
N l nng tp cht donor nguyn t /cm
3
A
N l nng tp cht acceptor nguyn t /cm
3
v b sung cc iu kin cn thit sau: 1-Vt liu bn dn phi trung ha v in tch, tc iu
kin l: tng in tch dng v in tch m l bng khng. Cc ion donor v cc l trng mang
in tch dng, ngc li, cc ion acceptor v cc in t mang in tch m. Vi vy, iu kin
trung ha v in tch s l:
0 ) (
A D
= + n N p N q (1.10)
2-Tch ca nng in t v l trng trong vt liu bn dn nguyn cht cho biu thc
(1.3) l:
2
i
n pn = c th hiu mt cch l thuyt vn ng i vi bn dn tp iu kin cn
bng nhit v biu thc (1.3) vn c gi tr cho mt khong rt rng ca nng pha tp.
* i vi vt liu bn dn tp dng-n. ) (
A D
N N >
T iu kin
2
i
n pn = suy ra p v thay vo (1.10), ta c phng trnh bc hai ca n:
0 ) (
2
i
A D
2
= n n N N n
gii phng trnh trn ta c:
CU KIN IN T 9
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN


2
4 ) ( ) (
2
i
2
A D A D
n N N N N
n
+
= v
n
n
p
2
i
= (1.11)
Trong thc t th
i A D
2 ) ( n N N >> , nn c th tnh gn ng: ) (
A D
N N n . Cng thc
(1.11) c dng khi
A D
N N > .
* i vi vt liu bn dn tp dng-p. ) (
D A
N N >
i vi trng hp khi
D A
N N > , thay n vo (1.10) v gii phng trnh bc hai cho p ta c:

2
4 ) ( ) (
2
i D A D A
n N N N N
p
+
= v
p
n
n
2
i
= (1.12)
Tr li vi trng hp thng dng:
i D A
2 ) ( n N N >> nn: ) (
D A
N N p . Biu thc
(1.12) s c s dng khi
D A
N N > .
Do nhng hn ch ca vic iu chnh qu trnh pha tp trong thc t, nn mt cc tp cht c
th a vo mng tinh th Silicon ch trong khong xp x t
14
10 n
21
10 nguyn t /cm
3
. V
vy,
A
N v
D
N thng ln hn rt nhiu so vi nng cc ht ti in c bn trong bn dn
Silicon nhit phng.
T cc biu thc gn ng trn, ta thy rng mt cc ht ti in a s c quyt nh trc
tip bi nng tp cht thc t :
) (
D A
N N p i vi
D A
N N > hoc: ) (
A D
N N n i vi:
A D
N N > .
Nh vy: c bn dn tp dng-n v bn dn tp dng-p, nng ht ti in a s c thit
lp bi nh ch to bng cc gi tr nng tp cht
A
N v
D
N v do khng ph thuc vo
nhit . Ngc li, nng cc ht ti in thiu s, mc d nh nhng t l vi
2
i
n v ph
thuc nhiu vo nhit .
1.5 M HNH VNG NNG LNG.
M hnh vng nng lng trong cht bn dn a ra mt quan im r rng hn v qu trnh
pht sinh cp in t-l trng v s iu chnh nng cc ht ti in bng cc tp cht. Theo
c hc lng t th vi cu trc tinh th c tnh trt t cao ca mt nguyn t bn dn s hnh
thnh cc khong lng t c tnh chu k cc trng thi nng lng cho php v cm ca cc
in t quay xung quanh cc nguyn t trong tinh th.
Hnh 1.7 m t cu trc vng nng lng trong bn dn, trong vng dn v vng ha tr
tng trng cho cc trng thi cho php tn ti ca cc in t. Mc nng lng
V
E tng ng
vi nh ca vng ha tr v tng trng cho mc nng lng c th cho php cao nht ca mt
in t ha tr. Mc nng lng
C
E tng ng vi y ca vng dn v tng trng cho mc
nng lng ca cc in t c th c c thp nht trong vng dn. Mc d, cc di nng lng
m t hnh 1.7, l lin tc nhng thc t, cc vng nng lng bao gm mt s lng rt ln
cc mc nng lng ri rc c khong cch st nhau.
CU KIN IN T 10
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

Cc in t khng c php nhn cc gi tr nng lng nm gia
C
E v
V
E . S chnh lch
gia hai mc
C
E v
V
E c gi l mc nng lng vng cm
G
E , ta c:
V C G
E E E = (1.13)
Bng 1.3 trn gii thiu mc nng lng vng cm ca mt s cht bn dn.
a) S pht sinh cp in t-l trng bn dn nguyn cht.
Khi bn dn Silicon nhit rt thp ( 0K), th cc trng thi nng lng vng ha tr hon
ton c in y cc in t, v cc trng thi vng dn l hon ton trng, nh m t hnh
1.8. Cht bn dn trong trng hp ny s khng c dng dn khi c in trng t vo. Khng
c cc in t t do trong vng dn v khng c
cc l trng tn ti trong vng ha tr in y
hon ton to ra dng in. M hnh vng
nng lng hnh 1.8, tng ng trc tip vi
m hnh lin kt y nh hnh 1.2.
Khi nhit tng ln trn 0K, nng lng nhit s
c b sung vo mng tinh th, mt vi in t
nhn c nng lng cn thit vt qu mc
nng lng ca rng vng cm v s nhy t
vng ha tr vo vng dn, nh m t hnh 1.9.
Mi in t nhy qua vng cm s to ra mt cp
in t - l trng. Tnh trng pht sinh cp in t
- l trng ny tng ng trc tip vi hnh 1.3,
trn.
b) M hnh vng nng lng i vi bn dn tp.
Hnh 1.10, v 1.12, l m hnh vng nng lng ca vt liu ngoi lai, l cc nguyn t donor
v / hoc nguyn t acceptor. hnh 1.10, nng cc nguyn t donor
D
N c b sung
vo bn dn. Cc in t d cc nguyn t donor a vo bn dn Si s c nh v trn cc
mc nng lng mi trong phm vi vng cm tc l ti cc mc nng lng donor
D
E gn vi
y ca vng dn.
Gi tr ca (
D C
E E ) ca nguyn t
Phosphorus (P) vo khong 0,045 eV, do vy
ch cn mt nng lng nhit rt nh y cc
in t d t v tr donor vo vng dn. Mt
cc in t cc trng thi nng lng trong
vng dn cao hn xc sut tm kim mt in t
trng thi donor hu nh bng khng, ngoi
tr cc vt liu pha tp m (
D
N ln) hoc ti
nhit rt thp. Nh vy, nhit phng,
ch yu ton b cc in t c trng thi nng
lng donor c t do tham gia qu trnh dn in. Hnh 1.10, tng ng vi m hnh lin
kt hnh 1.5.
Trong hnh 1.11, mt lng tp cht acceptor (cht nhn) thuc nhm 3, c nng
A
N
c b sung vo bn dn. Cc nguyn t acceptor a vo s to ra cc mc nng lng mi
trong vng cm ti cc mc nng lng acceptor
A
E gn vi nh ca vng ha tr. Gi tr
(
V A
E E ) ca Boron (B) trong bn dn Si xp x 0.044 eV, v ch cn ly nng lng nhit rt
nh y cc in t t vng ha tr ln cc mc nng lng acceptor. nhit phng, ch
yu ton b cc v tr acceptor l c in y, v c mt in t c y ln mc acceptor s
to ta mt l trng tc l ht ti in t do tham gia vo qu trnh dn in. Hnh 1.11 tng
ng vi m hnh lin kt hnh 1.6(b).
b) Cc cht bn dn b tr.
Trng thi ca mt bn dn b tr bao gm c hai loi tp cht acceptor v donor c m t
hnh 1.12 cho trng hp m trong c cc nguyn t donor nhiu hn nguyn t acceptor.
CU KIN IN T 11
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

Cc in t s tm cc trng thi nng lng thp c sn v chng s ri xung t cc v tr
donor in y ton b vo cc v tr acceptor c sn. Nng in t t do cn li cho bi
) (
A D
N N n = .
1.6. LINH NG V IN TR SUT TRONG BN DN TP.
Vic a cc tp cht vo mt cht bn dn chng hn nh Silicon, thc s lm gim linh
ng ca cc ht ti in trong vt liu. Cc nguyn t tp cht c s khc nh v kch thc so
vi cc nguyn t Si m chng thay th v th ph v tnh chu k ca mng tinh th. Ngoi ra,
cc nguyn t tp cht l c ion ha v tng ng vi cc vng in tch c xc nh m
trong s khng c tinh th gc (Si).
Hai nh hng s lm cho cc in t v cc l trng phn tn khi chng di chuyn trong bn
dn cng nh lm gim linh ng ca cc ht ti in trong tinh th. Hnh 1.13 cho bit s
ph thuc ca linh ng vo tng mt tp cht pha tp ) (
D A
N N N + = bn dn
Silicon, trong linh ng gim mnh khi mc pha tp trong tinh th bn dn tng ln.
linh ng trong cc vt liu pha tp m c thp hn nhiu so vi linh ng trong vt liu
pha tp long.
V d 1.2: Hy tnh in tr sut ca bn dn Si c pha tp vi mt donor
3 15
D
cm / 10 2x N = v ) 0 (
A
= N .
CU KIN IN T 12
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

Gii: Trong trng hp ny, ta c
A D
N N > v ln hn nhiu so vi
i
n , v vy:
15
D
10 2x N n = = in t /cm
3
; v
4 15 20
2
i
10 5 10 2 / 10 x x
n
n
p = = = l trng/cm
3
. Bi v,
n > p nn y l bn dn Si tp dng n. T th hnh 1.13, ta c linh ng ca
in t v l trng ng vi nng tp cht:
3 15
cm / 10 2x l:
V.s / cm 1260
2
n
= v V.s / cm 460
2
p
=
dn in v in tr sut s l:
1 4 15 19
) cm . ( 403 , 0 )] 10 5 )( 460 ( ) 10 2 )( 1260 [( 10 6 , 1

= + = x x x , suy ra: cm . 48 , 2 =
So snh in tr sut kt qu trn vi in tr sut ca bn dn Si tinh khit, ta thy rng: vic
a mt phn rt nh tp cht vo mng tinh th Si s lm thay i in tr sut khong
5
10 ln,
tc l lm thay i vt liu t mt cht cch in thnh cht bn dn c gi tr in tr sut nm
khong gia di in tr sut ca cht bn dn.
S pha tp tp cht cng s quyt nh mt trong hai loi vt liu bn dn tp dng n hoc p v
cc biu thc n gin c th c dng tnh dn in ca nhiu loi vt liu bn dn tp.
Lu rng: p n
p n
>> trong biu thc tnh dn in v d 1.2 s ng cho vt liu
bn dn tp dng n cc mc pha tp thng gp, v i vi vt liu bn dn tp dng p
th: n p
n p
>> . V vy, nng cc ht ti in a s s iu chnh dn in ca vt liu:
) (
) (
D A p p
A D n n
p - dn ban liu vt vi i N N q p q
n - dn ban liu v t vi i N N q n q




(1.14)
V d 1.3: Mt mu vt liu Si tp dng n c in tr sut 0,054 .cm. Bit mu Si ch
c mt loi tp cht donor. Tnh nng tp cht donor
D
N ?
Gii: i vi bi ton ny cn phi gii bng phng php: th - sai lp li [iterative
trial-error]; y l mt v d v mt kiu bi ton thng gp trong k thut.
V in tr sut nh, nn chc chn ta gi thit rng:

D n n
N q n q = = v
q
N

=
D n

Ta bit rng
n
l mt hm s ca nng pha tp
D
N , m ch ph thuc di dng
th. Vic gii i hi s thm d sai s-th lp li bao gm c cc c lng v ton v
th. gii bi ton, ta cn phi thit lp mt tin trnh hp l cc bc m trong
s chn mt thng s cho php chng ta nh gi cc thng s khc t n li gii.
Phng php gii bi ton ny l:
1. Chn mt gi tr ca
D
N .
2. Tm
n
th ca linh ng
3. Tnh
D n
N .
4. Nu
D n
N khng chnh xc, th quay li bc 1.
D nhin, chng ta hy vng c th tin hnh chn t n kt qu sau mt vi php th.
i vi bi tp ny ta c:
1 20 1 19
) V.s.cm ( 10 2 , 1 ) 10 6 , 1 054 , 0 (

= = x x x
q


S th t
php th
D
N
(cm
-3
)
n

(cm
2
/ V.s)
D n
N
(V.s.cm)
-1
1 1x10
16
1100 1,1x10
19
2 1x10
18
350 3,5x10
20

3 1x10
17
710 7,1x10
19
4 5x10
17
440 2,2x10
20

5 4x10
17
470 1,9x10
20
6 2x10
17
580 1,2x10
20

CU KIN IN T 13
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

Sau 6 ln th lp li, ta tm c
D
N = 2x10
17
nguyn t donor/cm
3
.
1.7 DNG KHUYCH TN V DNG TNG.
a) Dng khuych tn.
Nh gii thch trn, ta bit rng nng in t v l trng trong cht bn dn c quyt
inh bi nng tp cht pha tp
A
N v
D
N ; y ta ngm gi thit rng s pha tp trong
cht bn dn l ng nht, nhng vn ny l khng th c. Cc thay i trong vic pha tp l
thng gp trong cc cht bn dn v s c cc chnh lch [gradient] cc nng in t
v l trng. Gradien v nng cc ht ti in t do ny s dn n mt c ch dng in khc
c gi l dng khuych tn [diffusion].
Cc ht ti in t do c khuynh hng di chuyn (khuych tn) t vng c nng cao n
vng c nng thp. Gradient mt chiu n gin ca nng in t v l trng c m t
hnh 1.14.
Gradient trong hnh l dng theo chiu + x nhng s khuych tn cc ht ti in theo chiu -
x, t ni c nng cao sang ni c nng thp. V vy, mt dng khuych tn s t l vi
m gradient ht ti in:

+ =

+ =
x
n
qD
x
n
D q j
x
p
qD
x
p
D q j
n n
diff
n
p p
diff
p
) (
) (
A/cm
2
(1.15)
Cc hng s t l
p
D v
n
D c gi l h s khuych tn ca in t v l trng, c n v l
(cm
2
/s). khuych tn v linh ng c quan h vi nhau bi h thc Einstein:
p
p
n
n

D
q
kT D
= = (1.16)
ai lng (kT/ q = V
T
) c gi l th nhit V
T
, c gi tr xp x 0.025V nhit phng.
Thng s V
T
thng c dng trong cc phn ni dung ca mn hc.
b) Dng tng.
Thng thng, dng in trong bn dn c hai thnh phn: dng tri v dng khuych tn. Mt
dng tri tng ca in t v l trng
T
n
j v
T
p
j c th c xc nh bng cch cng cc
thnh phn dng tri v dng khuych tn tng ng ca mi loi t biu thc (1.6) v (1.15), ta
c:

+ =
x
p
qD pE q j
x
n
qD nE q j
p p
T
p
n n
T
n

(1.17)
Thay h thc Einstein t (1.16) vo biu thc (1.17), ta c:
CU KIN IN T 14
BIN SON DQB, B/M TVT-HKT CHNG 1: VT L BN DN

+ =
x
p
p
V E p q j
x
n
n
V E n q j
1
1
T p
T
p
T n
T
n

(1.18)
Cc biu thc trn l nhng cng c ton hnh thnh nn c s l thuyt cho vic phn tch
nguyn l hot ng ca cc cu kin bn dn.
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
15
CHNG 2: TIP GIP PN - DIODE BN DN

Trc tin, ni dung ca chng 2 s gii thiu v tip gip pn. Tip gip pn l phn t chnh
ca cc cu kin bn dn v nu ch xt mt tip gip pn th c gi l diode tip gip, mt cu
kin rt quan trng trong in t. Tuy nhin, c l ng k hn, tip gip pn hin nay c th vn
l phn c bn ca hu ht cc dng c bn dn khc nhau v c cc mch vi in t, nn cn
phi hiu v tip gip pn trc khi kho st cc cu kin bn dn khc cc chng tip theo.
Cu kin in t n gin nht c gi l diode. Diode bn dn c kt hp bng hai vt liu
khc loi c gn kt vi nhau theo kiu sao cho in tch d dng chy theo mt chiu nhng
s b ngn cn theo chiu ngc li.
Diode c pht minh bi Henry Dunwoody vo nm 1906 khi ng t mt mu
carborundum vo gia hai vng kp bng ng vo l in. Sau mt vi nm, Greeleaf
Pickard pht minh b tch sng v tuyn tinh. Cc nghin cu khc nhau c din ra trong
khong thi gian t 1906 n 1940 cho thy rng silicon v germanium l nhng loi vt liu
rt tt dng ch to cc diode bn dn.
Nhiu vn kh khn c khc phc v cu trc v cng ngh ch to cc diode. Cho n
nhng nm gia thp nin 1950, cc nh ch to gii quyt c vn kh khn nht. Trong
thi k bng n v cng ngh nhng nm cui thp nin1950 v u thp nin 1960, cng ngh
bn dn t c thnh tu ln ng ch , do nhu cu phi c cc cu kin in t trng
lng nh, kch thc nh, v tiu th mc ngun thp dng cho vic pht trin tn la lin lc
a v cc tu v tr. Nhim v quan trng c t ra trong vic ch to cc cu kin bn
dn c th nhn c tin cy cao trong cc ng dng m trong khng th thc hin vic
bo dng. Kt qu l pht trin cu kin bn dn r hn v tin cy cao hn so vi cc n
chn khng.
Ni dung c bn ca chng s gii thiu nguyn l hot ng v cc ng dng ca diode bn
dn, loi cu kin hai in cc, kch thc nh, khng tuyn tnh (ngha l khi p t tng hai
mc in p s to ra mc dng in khng bng tng ca hai mc dng ring to thnh). Diode
hot ng ty thuc vo cc tnh ca in p t vo. c tuyn khng tuyn tnh ca diode l
l do diode c trong nhiu mch in t ng dng. Tip theo s phn tch v kho st mch
tng ng ca diode tip gip silicon, gii thch mt s ng dng quan trng ca diode.
Diode zener cng c gii thiu v kho st vic s dng diode zener iu ha in p,
cng nh cch thit k mch diode zener.
Gii thiu mt s loi diode chuyn dng khc nh diode Schottky, diode bin dung, diode pht
quang [light-emitting diode LED], v photodiode.
2.1 TIP GIP PN TRNG THI CN BNG.
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
16
chng 1, c hai loi vt liu bn dn tp n v p c xem xt. Tip gip pn hay diode tip
gip c to thnh bng cch ghp ni n gin hai loi vt liu bn dn tp dng n v p vi
nhau (cu trc da trn cng mt loi bn dn Si hoc Ge), nh m t hnh 2.1a.
Trong thc t, diode c th c ch to bng cch: Trc tin, ngi ta ly mt mu bn dn
tp dng n c nng pha tp N
D
v tin hnh bin i chn lc mt phn mu n thnh vt liu
bn dn p nh b sung cc tp cht acceptor c nng N
A
> N
D
. Vng bn dn tp dng p c
gi l anode cn vng n c gi l cathode ca diode. K hiu mch ca diode nh hnh
2.1c. Tip gip pn l b phn c bn ca tt c cc cu kin bn dn v cc vi mch in t (IC).
n gin, vi gi thit khng c cc th hiu ngoi t vo mu tinh th, v mt ht ti
in ch ph thuc vo phng x, ta c th xt mt diode tip gip pn, tng t nh hnh 2.1,
vng vt liu bn dn tp dng - p c N
A
= 10
17
(nguyn t /cm
3
) v N
D
= 10
16
(nguyn t/cm
3
)
vng vt liu n. Nh vy, cc nng in t v l trng hai pha ca tip gip s l:
Vng bn dn tp p c p
p
= 10
17
(l trng/cm
3
) v n
p
10
3
(in t/cm
3
)
Vng bn dn tp n c p
n
10
4
(l trng/cm
3
) v n
n
= 10
16
(in t/cm
3
)
Vi cc nng pha tp trn, ta c th v gin biu din nng theo thang loga nh hnh
2.2a, pha bn dn p ca tip gip c nng l trng rt ln, ngc li pha bn dn n c
nng l trng nh hn rt nhiu. Cng vy, nng in t rt ln pha bn dn n v nng
in t rt nh pha bn dn p. Do c s chnh lch v nng hai pha ca tip gip nn
s c s khuych tn xy ra qua tip gip pn. Cc l trng s khuych tn t vng c nng
cao pha bn dn p sang vng c nng thp pha bn dn n, cn cc in t s khuych
tn t pha bn dn n sang pha bn dn p nh hnh 2.2b, v c.
T phng trnh (1.17), mt dng khuych tn ca in t v l trng c thm ch s 0
nng in t v l trng ch r l xt trng thi cn bng:

dx
dp
J
dx
dn
J
0
n
kh.tan
p
0
n
kh.tan
n
qD
qD
=
=
(2.1)
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
17
Thng thng, nu qu trnh khuych tn l lin tc v khng suy gim, th s dn n s ng
nht v nng ca cc in t v l trng trong ton b vng bn dn v s khng tn ti tip
gip pn. Nhng do s khuych tn ca cc ht mang in tch, m hnh thnh hai vng in tch
tri du bi cc ion, nn c mt qu trnh b tr khc c thit lp cn bng vi dng
khuych tn, l dng tri, pht sinh t vng ln cn lp tip gip nh m t hnh 2.3.
Khi cc l trng di chuyn ra khi vng vt liu bn dn p s li cc ion ca nguyn t
acceptor mang in tch m, khng di chuyn. Tng t, cc in t khi di chuyn ra khi vng
vt liu bn dn n s li cc nguyn t donor b ion ha khng di chuyn, mang in tch
dng, ngha l ngay lp tc s hnh thnh mt vng in tch tri du hay mt lp mng cc ion
khng trung ho, xung quanh tip gip, v rt t cc ht ti in t do trong vng ny, nn c
gi l vng in tch khng gian [SCR] hay gi n gin l vng ngho.
Hnh 2.4a, cho thy s phn b in tch tip gip. Mt in tch trong vng in tch
khng gian s bng tch ca nng tp cht v in tch ca mi ion.
S trung ho v in tch hai pha tip gip pn i hi din tch ca hai hnh ch nht phi
bng nhau. Vi cc mc pha tp cho trn, do acceptor c mt cao hn, nn lp in tch
khng gian m mng hn so vi vng in tch khng gian dng.
Theo l thuyt trng in t, t s phn b in tch khng gian, Q (C/cm
3
), ta c th suy ra s
phn b in trng (V/cm) qua nh lut Gauss theo mt hng:
s
Q
x
E

(2.2)
trong : Q l mt in tch khng gian, v
o s
, = 8 11 l hng s in mi ca cht bn dn,
vi F/cm 10 85 , 8
14
=
o
l hng s in mi ca khng kh.
Ti vng trung ho hay ta trung ho [QNR] v in tch pha bn dn p, in trng bng 0
khi
p
x x = , nn tnh tch phn phng trnh (2.2) theo vng in tch khng gian c mt
in tch
A
qN Q = :
0. x ) x (
q
p p
s
A
x
p
x
s
< < +

x x
N
dx
Q
E (2.3)
pha bn dn n, in trng E phi bng 0 ti im bt u ca vng trung ho:
n
x = x
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
18
. x 0 ) x (
q q
n n
s
D
x
n
x
s
D
< <

=

x x
N
dx
N
E (2.4)
T (2.3) & (2.4) ta thy rng, cng in trng ti im tip
gip (x = 0) phi c gi tr ln nht nn c v nh hnh 2.4b,.
in trng phi lin tc ti x = 0, nn ta c:
n D p A
x x N N = (2.5)
Phng trnh (2.5) chng t rng, vng in tch khng gian s
m rng v pha c mc pha tp long hn. in trng c
hnh thnh do vng in tch khng gian s "qut" cc ht ti
in ra khi vng in tch khng gian, kt qu l c mt dng
tri ca in t v l trng, t phng trnh (1.12) v (1.13):
E p J E n J
p 0
tri
p n 0
tri
n
q ; q = = (2.6)
Ngoi ra, ti x = 0, in trng E c gi tr m (in trng E
ngc chiu vi chiu tng ca x), nn dng tri ca cc in t
c chiu t pha bn dn p sang pha bn dn n (tc l dng cc
ht ti in thiu s), nhng dng khuych tn ca cc in t l
t pha bn dn n sang pha bn dn p (dng cc ht ti in a
s), do vy, trong mt tip gip pn, c hai thnh phn dng l
mt dng in t khuych tn v tri lun lun ngc chiu
nhau. C th xt tng t i vi dng khuych tn v tri ca
cc l trng.
trng thi cn bng (tc trng thi khng c in th ngoi t
vo tip gip, khng c dng chy thc qua tip gip), dng
khuych tn s cn bng vi dng tri. iu ny c ngha l
rng ca lp in tch khng gian s n nh ti mt gi tr no
m mi in t khuych tn n vng bn dn p di nh
hng ca gradient nng cao ca in t s c cn bng bi
mt in t i vo vng in tch khng gian t vng p c qut
bi in trng sang pha bn dn n, tc l:
0 q qD
n 0
0
n
tri
n
kh.tan
n n
= + = + = E n
dx
dn
J J J (2.7)
C th lp lun tng t p dng cho cc l trng c J
p
.
Trong phm vi vng in tch khng gian, mt s lng ln cc ht ti di dng chuyn ng.
S phn b ht ti l dng khuych tn cao s trit tiu ngay dng tri cao c to ra bi in
trng thit lp ti thi im cn bng. S cn bng ca cc dng tri v khuych tn c th b
xo trn khi p t in th ngoi vo tip gip.Thc t cho thy rng cc trng thi nng lng
ca di dn (v di ho tr) c gi tr cao hn vt liu bn dn p so vi cc trng thi nng
lng vt liu bn dn n. Nng lng trung bnh ca cc in t t do vng p l gn vi di
ho tr hn do cc trng thi acceptor, ngc li vt liu bn dn n nng lng trung bnh ca
cc in t t do l gn vi di dn hn do c nhiu in t cc trng thi donor. Tuy nhin,
c s cn bng khi tip xc hai vng, th nng lng trung bnh ca in t phi ng nht,
ni cch khc xut hin s chuyn tip nng lng. Cc mc nng lng cao hn ca di dn v
di ho tr pha bn dn p ca tip gip tng ng vi mt th hiu tip xc [contact potential]
B
, tn ti ngang qua vng ngho. V bn cht, th tip xc tng ng vi ro th m mt in
t phi vt qua khuych tn ngang qua tip gip. S bin i th hiu ngang qua vng in
tch khng gian c th tnh bng cch ly tch phn in trng,

= Edx V . Da vo hnh
2.4c. S dng gi tr in trng cc phng trnh (2.3) v (2.4), ta c:
) x x (
2
q
) (x
q
) x (
q
2
n D
2
p A
s
n
x
0
n
s
D
0
p
x
p
s
A
n
x
p
x
N N dx x
N
dx x
N
Edx V +

= + +

= =



(2.8)
trng thi cn bng, y chnh l th tip xc
B
[Built-in potential] (hay cn gi l
j
).
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
19
Trong thc t, xc nh gi tr ca
B
trng thi cn bng, dng tri s bng v ln
nhng ngc chiu vi dng khuych tn. T phng trnh (2.7), ta c th cn bng cc thnh
phn dng in t:
E n
dx
dn
n 0
0
n
q qD = (2.9)
trong : n
0
l nng ca in t trong vng in tch khng gian iu kin cn bng. Kt
hp vi h thc Einstein (phng trnh 1.19), ta c:
Edx
n
dn
V =
0
0
T
(2.10)
Ly tch phn ngang qua vng in tch khng gian, ta c:


=
n
x
p
x
no
po
0
0
T
Edx
n
dn
V
n
n
(2.11)
trong : n
no
l nng in t iu kin cn bng pha bn dn n, v n
po
l nng in t
cn bng pha bn dn p. S hng tch phn pha tri chnh l th tip xc
B
, vy ta c:
po
no
T B
ln
n
n
V = (2.12)
V
A
2
i po D no
/ va N n n N n = = , nn phng trnh (2.12), c th c vit nh sau:
2
i
A D
T B
ln
n
N N
V = (2.13)
Vy th tip xc ch lin quan vi cc mc pha tp v nhit ca tip gip (v n
i
ph thuc
nhiu vo nhit ). Tm li, th tip xc l ro th tip xc cn thit duy tr trng thi cn
bng ca tip gip pn. Ta khng th o c th tip xc bng mt voltmeter, nhng vn c s
thit lp cc mc th tip xc khi ch to tip gip bn dn. Bng cch kt hp cc phng trnh
(2.6) v (2.8), ta c th xc nh rng ca cc lp in tch khng gian:
1/2
A
2
D
D
B s
n0
2

+

=
N
N
N q
x
v
1/2
D
2
A
A
B s
p0
2

+

=
N
N
N q
x
(2.14)
Tng rng vng in tch khng gian ca tip gip pn trng thi cn bng:
1/2
D A
D A B s
p0 n0 d0
q
) ( 2

+
= + =
N N
N N
x x x
(2.15)
in trng ti tm tip gip pn trng thi cn bng:
1/2
D A s
D A B
0
) (
2

+

=
N N
N N q
E (2.16)

V d 2.1: Mt tip gip pn c ch to bng cch pha tp vo mu tinh th Si c:
N N
3 3
donor/cm nguyn t va m acceptor/c nguyn t
16
D
17
A
10 10 = = , ti nhit T = 300K.
Tnh th tip xc ca tip gip v dy ca lp in tch khng gian x
p
v x
n
.
Gii:
3
/cm in t , n ; ,
o
10 9
i
14
10 10 76 6 F/cm 10 85 8 = =

. Suy ra:
F/cm 10 04 1 ) 10 85 8 )( 8 11 ( 8 11
12 14
o S

= = = , , , ,
Ti 300
o
K, ta c 0,025V kT/q
T
= V . V vy t phng trnh (2.13),
V
) /cm (10
) /cm (10 ) /cm (10
ln V) (0,025 ln
3 20
3 16 3 17
2
i
D A
T B
748 0, =

=
n
N N
V .
Thay gi tr ca th tip xc vo phng trnh (2.14),
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
20
cm 10 0
) 10 )(10 10 (1,6
)(0,748V) 10 2(1,04
3
1/2
15 16 19
12

+

= 0297
p
, x
cm 10 0
3
D
A
p n

= = 297 , x
N
N
x
T phng trnh (2.14), c th c ba loi tip gip pn c ch to theo kiu pha tp khc nhau,
vi mt in tch biu din nh hnh 2.5:
- Tip gip i xng:
n0 p0 D A
x x N N = = .
- Tip gip bt i xng:
n0 p0 D A
x x N N < > .
- Tip gip bt i xng ln, tc l tip gip p
+
n:
D
1/2
D
J s
d0 n0 p0 D A
1
q
2
N N
x x x N N


<< >>

(2.17)
D
1/2
s
D J
0
2q
N
N
E

(2.18)
Pha bn dn c pha tp long s quyt nh cc c tnh tnh in ca tip gip pn.
Gi tr th tip xc tn ti khi c tip gip pn nh xt trn, nhng trong thc t khng th
o c bng voltmeter do cc thnh phn th tip xc ti cc tip gip bn dn - kim loi. Cc
tip xc bn dn - kim loi l cc tip gip ca cc vt liu khng ng nht, nn s c cc thnh
phn th tip xc l:
mp mn
, c xc nh nh hnh 2.6. Do s chnh lch in th ngang
qua cu trc ca diode phi bng 0, nn trong thc t khng th o c thnh phn th tip gip
B
trn hai u ca diode bng voltmeter !.
mp mn B
+ = (2.19)

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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
21
2.2 TIP GIP PN TRNG THI PHN CC.
Trong cc mch in t, phn cc l t cng bc ngun mt chiu (dc) ln cu kin bn dn
bng ngun ngoi (V
D
). Nu ngun in p vi u dng ca ngun ni v pha anode v u
m ni v pha cathode ca diode th gi l phn cc thun, (tc V
D
> 0), nu o ngc ngun
p th gi l phn cc nghch (V
D
< 0). Hnh 2.7, cho thy mch ca diode tip gip pn khi c
phn cc thun.
Vi st p cc vng trung ho v tip gip kim loi bn dn khng ng k, in p V
D
s to
ra in trng ch yu t vo vng in tch khng gian c chiu ngc li vi in trng tip
xc nu c phn cc thun, nn s lm suy gim in trng tip xc mt cch hiu qu. in
th tip xc s gim xung (hnh 2.8).
Tng t i vi trng hp phn cc ngc hiu th tip xc s tng ln. Vy chnh lch th
hiu qua tip gip (cn gi l ro th [potential "barrier"]) s l:
- trng thi cn bng l:
B

- trng thi phn cc thun:
B D B
< V
- trng thi phn cc ngc: 0) (v
D B D B
< > V V
Cc c trng tnh in ca vng ngho ca tip gip pn trng thi phn cc c th m t nh
hnh 2.9.
Khi phn cc thun: th tip xc gim, tc E gim nn s lm cho rng vng ngho
d
x hp
li. Khi phn cc ngc: th tip xc tng ln, tc E tng nn s lm cho rng vng ngho
d
x tng ln.
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
22
Hai vng in tch ca vng ngho b iu bin iu chnh th hiu t trn tip gip. V vy,
cc c trng tnh in ca vng ngho khi phn cc tng t nh cc c trng tnh in ca
vng ngho trng thi cn bng nu thay th
B
bng
D B
V .
Suy ra:
1/2
D D A
A D B s
D n
) q(
) ( 2
) (

+

=
N N N
N V
V x
1/2
A D A
D D B s
D p
) q(
) ( 2
) (

+

=
N N N
N V
V x (2.20)
1/2
D A
D A D B s
D d
q
) )( ( 2
) (

+
=
N N
N N V
V x (2.21)
1/2
D A s
D A D B
D
) (
) 2q(
) (

+

=
N N
N N V
V E (2.22)
Hoc c th vit di dng:
B
D
n0 D n
1 ) (

=
V
x V x
B
D
p0 D p
1 ) (

=
V
x V x (2.23)
B
D
d0 D d
1 ) (

=
V
x V x (2.24)
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
23
B
D
0 D
1 ) (

=
V
E V E (2.25)
trong :
0 d0 p0 n0
;& ; ; E x x x l cc i lng tng ng trng thi cn bng.
tip gip pn bt i xng ln, ngha l c pha tp vi nng hai pha tip gip ln, v
d N
A
>> N
D
, xp x cc biu thc ca rng vng ngho pha bn dn n, x
n
; rng vng
ngho pha bn dn p tc x
p
, rng vng ngho tng x
d
, in trng E, v th tip xc
B
, ta
thy rng tt c cc thay i xy ra pha pha tp thp nht (hnh 2.10).
2.3 PHNG TRNH DIODE V C TUYN I - V CA DIODE.
Nh xt trn, bng vic p t in p phn cc cho tip gip pn lm cho vng ngho s
rng ra hay co hp li, v cho dng in chnh lu, ngoi ra cng c s lu tr in tch ca ht
ti in.
i vi nng ht ti, trng thi cn bng nhit, c s cn bng ng gia dng tri v dng
khuych tn ca in t v l trng:
kh.tan tri
J J = .
Nu xt nng ht ti in trong tip gip pn khi c phn cc ta thy rng: khi phn cc
thun 0) (
D
> V , ro th tip gip s gim, ) (
D B
V , nn s lm cho in trng qua vng
ngho gim,
SCR
E , v dng tri gim xung,
tri
J . S cn bng gia hai thnh phn dng
qua vng ngho b ph v, tc l:
kh.tan tri
J J < , nh m t hnh 2.11.
Dng khuych tn thc chy qua vng ngho lm cho cc ht ti in "thiu s" phng thch vo
hai vng trung ho, nn c s vt tri nng ht ti in thiu s hai vng trung ho. Vy
mt lng ln ht ti in a s khuych tn vo hai vng trung ho c th to ra dng in ln
chy qua tip gip.
Mt khc, khi phn cc ngc ) 0 ( <
D
V , ro th tip gip s tng, ) (
D B
V , nn s lm cho
in trng qua vng ngho tng,
SCR
E , v dng tri tng ln,
tri
J . S cn bng gia hai
thnh phn dng qua vng ngho b ph v, tc l:
kh.tan tri
J J > nh hnh 2.12.
Dng tri thc chy qua vng ngho lm cho cc ht ti in thiu s b rt ra khi hai vng
trung ho, nn c s st gim nng ht ti in thiu s trong hai vng trung ho. C rt t ht
ti in thiu s vo hai vng trung ho nn chi cho mt dng in nh.
Do , khi phn cc thun cho diode tip gip pn th cc ht ti in thiu s phng thch s
khuych tn qua vng trung ho, to ra s ti hp ti b mt bn dn. Khi phn cc ngc, cc
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
24
ht ti in thiu s rt ra khi vng ngho, to ra s ti sinh ti b mt v khuych tn qua vng
trung ho.Vy khi phn cc thun s c dng in ln do khuych tn cc ht ti in a s; cn
khi phn cc ngc s c dng tri nh do cc ht ti in thiu s nh th hin hnh 2.13.
c ln ca dng in chy qua diode, cn phi tnh nng cc ht ti in thiu s ti
hai bin vng ngho l p(x
n
) v n(- x
p
), v tnh dng khuych tn ca cc ht ti in thiu s
trong mi vng trung ho l I
n
v I
p
, sau tnh tng dng khuych tn ca in t v l trng,
p n
I I I + = .
T quan h gia th hiu v nng ht ti in ti cc im theo phng x, ta c t s nng
in t v l trng ti hai bin ca vng ngho trng thi phn cc, tc trng thi tng ng
vi
tan kh. tri
J J :
kT
) q(
exp
kT
)] x ( - ) (x q[
exp
) x (
) (x
D B
p n
p
n
V
n
n
=


v t s nng l trng ti hai bin vng ngho khi phn cc cho tip gip:
kT
) q(
exp
kT
)] x ( - ) (x q[
exp
) x (
) (x
D B
p n
p
n
V
p
p
=


Nhng nng in t v l trng ngay ti hai bin xp x bng nng pha tp, c gi l
xp x phng thch mc thp:
D n
) (x N n v
A p
) x ( N p , nn ta c:
kT
) q(
exp ) x (
B D
D p


V
N n (2.29)
v:
kT
) q(
exp ) (x
B D
A n

V
N p (2.30)
Vi gi tr th tip xc l:
2
i
A D
B
n
ln
q
kT N N
=
thay vo phng trnh ) (-x
p
n v ) (x
n
p , s nhn c nng ht ti in thiu s ti hai bin
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
25
ca vng ngho l:
kT
q
exp
n
) x (
D
A
2
i
p
V
N
n (2.31)
v:
kT
q
exp
n
) (x
D
D
2
i
n
V
N
p (2.32)
Vy nng ht ti in thiu s khuych tn ngay ti hai bin ca vng ngho tu thuc vo
in p phn cc, tc l:
- trng thi cn bng 0) (
D
= V , ta c:
A
2
i
p
n
) x (
N
n = ;
D
2
i
n
n
) (x
N
p =
nh bit trn.
- trng thi phn cc thun 0) (
D
> V ; ngay ti gi tr rt nh 0,1V) (
D
= V , ti nhit phng:
A
2
i
p
n
) x (
N
n >> ;
D
2
i
n
n
) (x
N
p >>
C mt s lng ln cc ht ti in c phng thch: Vy khi in p phn cc tng ln s
cho nng ht ti in phng thch ln, nn dng thun ln.
- trng thi phn cc ngc 0) (
D
< V , th:
A
2
i
p
n
) x (
N
n << ;
D
2
i
n
n
) (x
N
p <<
C rt t ht ti in trch ra khi vng ngho, cho dng ngc nh. Do c s gii hn st
gim nng ht ti in thiu s thp, nn khi phn cc ngc, c dng ngc chy qua tip
gip rt b, gn bng 0, nn c s bo ho dng ngc.
Nh vy, c tnh chnh lu ca diode tip gip pn c xc nh t cc iu kin bin ca
ht ti in thiu s ti hai bin ca vng ngho.
Tip theo l cn phi xc nh dng khuych tn ca cc ht ti in trong hai vng trung ho.
Do s khuych tn ca cc in t trong vng trung ho pha bn dn - p, chuyn n v ti hp
vi tc khng i, mt dng in t
n
J khng i nn nng in t n(x) l tuyn tnh
nh c biu din hnh 2.14.
Vi cc iu kin bin ti v tr ) W (
p
l rng vng trung ho ca bn dn - p, ta c:
A
2
i
0 p
n
) W (
N
n x n = = = v:
kT
q
exp
n
) x (
D
A
2
i
p
V
N
n =
Phng trnh biu din nng in t ti im x trong vng trung ho pha bn dn - p:
) x (
W x -
) (-W - ) x (-
) x (- ) (
p
p p
p p p p
p p p
+
+
+ = x
n n
n x n (2.33)
Mt dng in t:
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
26
p p
A
2
i D
A
2
i
n
p p
p p p p
n n n
x W
n
kT
q
exp
n
qD
x W
) W ( ) x (
qD qD


= =
N
V
N
n n
dx
dn
J
1)
kT
q
(exp
x W
D n
q
D
p p
n
A
2
i
n

=
V
N
J (2.34)
Tng t, biu din dng l trng trong vng trung ho pha bn dn - n nh hnh 2.15:
Mt dng l trng:
1)
kT
q
(exp
x W
D
n
q
D
n n
p
D
2
i
p

=
V
N
J (2.35)
Tng c hai thnh phn dng in t v l trng khuych tn trong vng trung ho s l,
1)
kT
q
(exp
x W
D
1
x W
D 1
qn
D
n n
p
D p p
n
A
2
i p n

= + =
V
N N
J J J (2.36)
Dng in chy qua tip gip pn vi tit din A s l:
1)
kT
q
(exp
x W
D
1
x W
D 1
n q
D
n n
p
D p p
n
A
2
i D

=
V
N N
A I (2.37)
Dng diode thng c vit di dng phng trnh diode:
1)
V
(exp I 1)
kT
q
(exp I
T
D
S
D
S D
= =
V V
I (2.38)
trong :

=
n n
p
D p p
n
A
2
i S
x W
D
1
x W
D 1
q
N N
An I (2.39)
gi l dng bo ho ngc.
Vy khi tip gip pn c phn cc thun th mc chnh lch in th ngang qua vng ngho s
gim xung do in p phn cc V
D
, nn s to ra s phng thch ht ti in thiu s vo hai
vng trung ho. S khuych tn ht ti in thiu s vo su trong cc vng trung ho v ti hp
ti b mt ca vng trung ho. Do c cung cp s lng ht ti in ln cho s phng thch
nn s to ra dng in ln t l theo mc hm m in p t vo:
kT
q
exp
D
D
V
I
Khi tip gip pn c phn cc ngc th mc chnh lch in th ngang qua vng ngho s
tng ln do in p phn cc V
D
, nn s to ra s rt ta ht ti in thiu s khi hai vng trung
ho. S khuych tn ht ti in thiu s vo su trong cc vng trung ho v pht sinh ti b
mt ca vng trung ho. Do c cung cp s lng ht ti in rt t cho s rt ta nn s to ra
dng in c gi tr bo ho nh.
T phng trnh diode (2.37), ta nhn thy rng:
- Dng diode t l vi nng ht ti in thiu s vt tri ti hai bin ca vng in tch
khng gian: 1)
kT
q
(exp
n
D
2
i
D

V
N
I . ch phn cc thun:
kT
q
exp
n
D
2
i
D
V
N
I , nhiu hn
ht ti in c phng thch nn s cho dng in ln hn chy qua diode. ch phn cc
ngc:
N
I
2
i
D
n
, nng ht ti in thiu s b suy gim n gi tr khng ng k v dng
in s bo ho.
- Dng diode cng t l vi khuych tn: D
D
I , nn vi s khuych tn nhanh hn s cho
dng in ln hn.
- Dng diode t l nghch vi rng vng trung ho
QNR
D
W
1
I , vy ht ti in khuych
tn qua vng trung ho ngn hn s cho dng diode ln hn.
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
27
- Dng diode cng t l vi tit din ca diode: A I
D
tc l diode c tit din ln hn s cho
dng chy qua diode ln hn.
Ch rng, ti 0 x , dng tip gip khng phi hon ton l dng khuych tn, nhng dng
tng phi vn khng i. Phng trnh diode thng c hiu chnh di dng:
1) (exp
T
D
S D
=
nV
V
I I (2.40)
trong , n l h s thc nghim, n = 1 i vi khi ch c dng khuych tn. Nhng khi c s ti
hp rt ln trong vng ngho (nh trong silicon vi cc gi tr ca V
D
thp hn 0,5 V), th n c
th phi c tng ln 2. Thc t cng thy rng n = 2 i vi phng thch mc cao tc mt
dng cao. Ti cc mc dng diode va phi th
2 1 < < n . i vi phn ln cc diode silicon, n
trong khong t 1,0 n 1,1.
Hnh 2.16, l c tuyn I - V, theo phng trnh
diode. Bi v V
T
26mV nhit phng
(300
o
K), dng I
D
ph thuc gi tr V
D
dng trn
50mV theo dng hm m. Cng vy, i vi V
D

m hn - 50mV, dng diode s c bo ho ti
gi tr I
S
. Thang o dng diode m c m
rng biu din gi tr rt nh ca I
S
. Theo c
tuyn I - V, cng cn phi lu rng, trong thc t
phng trnh diode s tr nn khng hp l ti gi
tr V
D
m ng k, khi dng diode s tng mnh
do nh thng in p.
2.4 CC C TNH CA DIODE BN DN.
a) in tr ng ca diode
Gia nng ht ti in v th hiu t vo c quan h theo hm m, nn c th vit biu thc
n theo s phn b nng v tnh ton cho c hai trng thi phn cc thun v ngc. Biu
thc s ng vi iu kin in p khng vt qu mc in p nh thng. Quan h trong
trng hp tng qut cn phi c th hin theo phng trnh (2.41).

= 1 exp
D
S D
nkT
qv
I i (2.41)
trong , i
D
l dng in trong diode (ampere); v
D
l chnh lch in th ngang qua diode (volt);
vi: V
T
= kT/q, suy ra:

= 1 exp
T
D
S D
nV
v
I i (2.42)
Nu diode lm vic nhit phng (khong 25
o
C) v ch ch phn cc thun, th s hng
u trong ngoc s vt tri, nn dng tnh c gn ng l,

T
D
S D
exp
nV
v
I i (2.43)
Phng trnh c c tuyn theo hnh 2.17.
Nh xt trn, mc dng bo ha ngc I
S
ty thuc vo s pha tp, kch thc hnh hc ca
diode, v nhit . Hng s thc nghim n c th khc nhau ty theo cc mc dng v p v ph
thuc vo s khuych tn, tri ca in t, v s ti hp ca ht ti in trong vng ngho.
Hng s n s t bng 2 khi s lng ti hp in t - l trng trong vng ngho tng ln.
Nu n =1, gi tr nV
T
l vo khong 25mV ti 25
o
C. Khi n = 2, th nV
T
s l khong 50mV.
tnh mc dng v p ti im lm vic Q, cn c vo dc ca c tuyn hnh 2.17, thay
i theo bin thin ca dng tun theo quan h hm m.
C th vi phn biu thc ca phng trnh (2.42) tnh dc ti mc dng i
D
c nh bt k.
dc l dn in tng ng ca cu kin.
( ) [ ]
T
T D S
D
D
/ exp
nV
nV v I
dv
di
= (2.44)
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
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T phng trnh diode c bn (2.42), ta c:
1 exp
S
D
T
D
+ =

I
i
nV
v

Thay vo phng trnh dn in (2.44), ta nhn c:
T
S D
D
D
nV
I i
dv
di +
= (2.45)
in tr ng l nghch o ca dn in (2.45), hay:
D
T
S D
T
d
i
nV
I i
nV
r
+
= (2.46)
v I
S
<< i
D
. Mc d bit rng r
d
thay i khi i
D
thay i, nhng ta thng cho r
d
c nh trong
khong lm vic quy nh, tc l ta chn mt tr s trong di cc in tr bin thin (tc c th
s dng I
D
thay cho i
D
). S dng s hng R
f
biu th in tr thun ca diode, m trong
bao gm r
d
v in tr tip xc gia cht bn dn v in cc kim loi.
b) in p ngng.
Hnh 2.18, l cc c tuyn m t nguyn l hot ng ca diode silicon v germanium thng
dng trong thc t, lm vic nhit phng.
Khi thang o dng c chn ph hp vi dng lm vic ln nht, th mi diode c mt mc
in p ngng V

khi c phn cc thun, di mc in p ngng dng diode rt nh,


nh hn 1% gi tr dng nh mc ca diode. in p ngng ny cn gi l in p dch. V
dng I
S
ca diode germanium ln hn nn in p dch ca diode germanium vo khong 0,2V -
0,3V, khi so snh vi in p dch ca diode silicon vo khong 0,6V - 0,7V. Trong nhiu ng
dng thng thng, diode c th c xem l ngng dn [OFF] ti cc gi tr in p thp hn
in p ngng.
Khi in p thun tng dn khi mc 0, dng in s khng bt u chy ngay, m ly theo mc
in p nh nht l V

(0,2V hoc 0,7V trong hnh v) c c mc dng c th o c. Khi


in p vt qu V

, th dng tng rt nhanh. dc ca c tuyn l ln, nhng khng phi v


cng nh trng hp vi diode l tng (V

xem nh bng 0).


Vy mc in p nh nht cn thit c mc dng c th o c V

vo khong 0,7V i vi
diode bn dn silicon (ti nhit phng), v khong 0,2V i vi diode bn dn germanium.
Khi diode c phn cc ngc, s c dng in r nh trong khong in p ngc thp hn
so vi in p cn nh thng tip gip. Dng r ca diode germanium ln hn nhiu so vi
diode silicon hay diode gallium arsenide. Nu mc in p m tr nn ln vng nh
thng, th mt diode thng thng c th b ph hy. in p nh thng c quy nh nh
in p ngc nh PIV [peak inverse voltge] trong cc thng s k thut ca nh sn xut.
H hng cc diode thng dng ti mc in p nh thng l do s tng nhanh ca dng in
t chy qua tip gip dn n qu nhit diode. Mc dng ln c th lm hng diode nu tch t
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
29
nhit vt qu mc cho php. nh thng do nhit i khi cng c xem nh in p nh
thng diode (V
BR
).
c) Dng ngc ca cc loi diode khc nhau.
Nh ni trn, t phng trnh diode (2.38) ta thy rng: dng bo ho ngc ph thuc vo
tit din ca tip gip, cc h s khuych tn ca ht ti in thiu s, nng ca cc ht ti
in thiu s iu kin cn bng, v di ca cc vng trung ho hay qung ng khuych
tn ca cc ht ti in thiu s, m cc thng s li ph thuc vo nhit v cc mc pha
tp. Do vy, dng bo ho I
S
c th c gi tr vo khong A i vi cc diode Germanium, v
vo khong c nA i vi cc diode Silicon. Nhiu diode c dng ngc biu hin tng theo
in p ngc khng tun theo phng trnh diode, v do dng r qua tip gip ti b mt ca
cht bn dn v do khi kho st phng trnh diode ta b qua s pht sinh cp in t - l
trng do nng lng nhit trong vng in tch khng gian. i vi cc tip gip silicon khi
c phn cc ngc th dng ngc khng tng do dng in pht sinh do nhit l thnh phn
ch yu ca dng bo ho nhit phng rt thp. V vy, dng ngc t ph thuc vo in
p ngc do vng ngho tr nn dy hn ti cc gi tr in p ngc cao hn.
d) Cc nh hng do nhit v h s nhit ca diode.
Nhit c vai tr quan trng quyt nh cc c tnh lm vic ca cc diode. Cc thay i v
c tnh ca diode gy ra do nhit thay i c th cn phi iu chnh v thit k v hon
thin cc mch. H s nhit c trng cho s thay i nhit l mt trong nhng thng s
quan trng cn phi c lu .
H s nhit lin quan n mc st p trn diode v
D
. Gii phng trnh diode (2.41) theo st
p trn diode iu kin phn cc thun (vi h s thc nghim n = 1), ta c:

+ =

+ =
S
D
S
D
S
D
T D
ln 1 ln 1 ln
I
i
q
kT
I
i
q
kT
I
i
V v [V]
Vi phn theo nhit ta c:
T
V V v
dT
dI
I
V
T
v
dT
dI
I q
kT
I
i
q
k
dT
dv
T GO D S
S
T
D S
S S
D D
3 1 1
ln

= =

= [V/ K]
trong ta cho rng:
S D
I i >> v I
S

2
i
n , v
D
l in p st trn diode; V
GO
l in p tng
ng vi mc nng lng rng vng cm ca Silicon ti
0
K, (V
GO
= E
G
/ q) , v V
T
l p nhit.
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
30
Hai s hng sau rt ra t s ph thuc vo nhit ca
2
i
n . Gin lc cc s hng phng
trnh trn i vi diode Si, chng hn c V
D
= 0,65V, E
G
= 1,12eV, v V
T
0,025V ta c:
1,82mV/K
300K
0,075)V 1,12 (0,65
D
=

=
dT
dv
(2.47)
Vy, ti nhit phng in p thun ca diode biu hin h s nhit m gn bng -1,82
mV/
0
C, ngha l ti gi tr dng diode I
D
khng i, in p V
D
s gim vo khong 2mV khi
nhit tng ln 1
o
C nhit t 25
o
C:
C 2mV/
o
D
D

I
dT
dV
(2.48)
Bng thc nghim, cng c th thy r s nh hng ca nhit trn cc c tuyn ca mt
diode Silicon nh hnh 2.19.
Nhit cng lm tng mc dng bo ha ngc v dng bo ho ngc bin thin theo nng
cc ht ti in thiu s, tc l thay i theo
2
i
n , m
2
i
n l mt hm ca nhit .
i vi diode bng bn dn Gemanium, dng bo ha ngc I
S
(cn gi l dng r hay dng r)
tng ln gn gp i c mi khi nhit tng ln 10
0
C, nhit 25
0
C s c dng I
S
vo
khong 1A hay 2A v c dng r vo khong 100A = 0,1mA ti nhit lm vic 100
0
C.
Vi cc mc dng r I
S
nh vng ngc, nn c th xem diode nh mt chuyn mch trng
thi h mch vng phn cc ngc. Thc t thy rng, i vi bn dn Silicon, I
S
s tng gp
i trong khong tng nhit 5
o
C nhit t 25
o
C. Tuy nhin, gi tr in hnh ca I
S

diode Silicon thp hn rt nhiu so vi I
S
ca diode bng bn dn Germanium c cng cp cng
sut v mc dng. Thm ch, ta cng c kt qu tng t khi diode lm vic nhit cao th
dng I
S
ca cc diode bng bn dn Si cng khng th t c cc mc dng r cao nh cc
diode Ge, y l l do rt quan trng khin cho cc diode bng bn dn Si c s dng nhiu
hn trong thit k ch to mch in t.
V c bn th s tng ng nh mt mch h vng phn cc ngc, khi lm vic ti nhit
bt k l l do tt nht c diode Si so vi diode Ge. Mc dng I
S
tng theo nhit , iu
ny gii thch cho vic cc mc in p ngng thp hn. vng phn cc ngc, in p nh
thng cng ty thuc vo nhit , nhng lu l dng bo ha ngc khng mong mun cng
tng ln. Dng bo ha ngc tng vo khong 7,2%/
o
C i vi c diode silicon v germanium.
Ni cch khc, I
S
gn gp i cho mi khong tng nhit l 10
o
C. Biu thc ca dng bo
ha ngc ph thuc vo nhit l,
)] ( )exp[ ( ) (
1 2 i 1 S 2 S
T T k T I T I = (2.49)
trong : k
i
= 0,07/
o
C v T
1
v T
2
l hai nhit khc nhau. Biu thc c th tnh gn ng bng
cch rt gn hm m,
)/10 (
1 0 2 S
1 2
)2 ( ) (
T T
T I T I

= (2.50)
bi v 2
7 0

,
e .
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
31
Khi mc in p phn cc thun trn diode khng i, th I
D
cng s tng gp i trong khong
tng nhit 10
o
C nhit t 25
o
C.
Khi nhit tng, in p chuyn sang dn V

s gim. Ngc li, khi nhit gim s lm tng


v V

, nh ch r hnh 2.19, trong V

thay i tuyn tnh theo nhit tun theo phng


trnh sau: (gi s dng chy qua diode c gi khng i).
) ( ) ( ) (
0 1 T 0 1
T T k T V T V = (2.51)
trong : T
0
l nhit phng, khong 25
o
C; T
1
l nhit lm vic ca diode (
o
C); V

(T
0
) l st
p trn diode ti nhit phng (Volt). i vi diode Si: V

(T
0
) = 0,7V, v diode Ge: V

(T
0
) =
0,2V; V

(T
1
) l st p trn diode nhit lm vic, (Volt); k
T
l h s nhit (V/
o
C). Gi tr
ca k
T
l khc nhau ty theo loi diode, i vi diode Ge c k
T
= - 2,5 mV/
o
C, diode Si c k
T
= -
2,0 mV/
o
C.
e) M hnh mch tng ng ca diode
Mch hnh 2.20a, tng ng vi m hnh n gin ca diode silicon c trng thi lm vic
dc thun v ngc. c tuyn ca m hnh gn nh c tuyn hot ng ca diode hnh 2.18.
in tr R
r
tng ng vi in tr phn cc ngc ca diode, thng vo khong vi megaohm.
in tr R
f
tng ng vi in tr khi v tip xc ca diode, thng nh hn 50. Khi c
phn cc thun, diode l tng l mt ngn mch, hay in tr bng 0. in tr mch ca diode
thc t khi phn cc thun c m hnh ha hnh 2.20a, l in tr u cc ca diode l
tng c ngn mch, hay:
f f r
R R R
trng thi phn cc ngc, diode l tng c in tr ln v cng (mch h) cn in tr
mch ca m hnh thc t l R
r
. Diode l tng l mt phn ca m hnh hnh 2.20a, phn cc
thun khi in p u cc vt qu 0,7V.
Cc m hnh mch ac phc tp hn do hot ng ca diode ph thuc vo tn s. M hnh ac
n gin cho diode phn cc ngc nh hnh 2.20b. T C
J
tng ng vi in dung ca tip
gip, xut hin do vng ngho nh mt t in. Hnh 2.20c, l mch tng ng ca diode
phn cc thun. M hnh bao gm hai t in l t khuych tn C
D
v t tip gip C
J
. in dung
khuych tn lin quan n s di chuyn ca cc ht ti in dn n trng thi c th so vi s
lu tr in tch. Do vy, h qu ca s khuych tn bao gm cc nh hng ca in dung.
in dung khuych tn C
D
s gn bng 0 khi diode phn cc ngc. in tr ng l r
d
. di
tn s thp cc nh hng ca in dung l nh v ch c R
f
l phn t ng k nht.
f) Phn tch mch diode
T cc ni dung trn, ta c thng tin c bn cn thit phn tch cc mch c diode. Gi s
cho mt mch gm cc cu kin tuyn tnh th ng, cc ngun cung cp v cc diode, cn phi
tnh mc dng v p lin quan. Bi ton cng c th gii quyt phng th nghim in t, chn
cc cu kin thch hp v ni dy cho mch, o cc mc dng v p bng cc ng h o / hoc
my hin sng. D nhin l cc iu kin ca phng th nghim phi p ng ph hp cc iu
kin ca bi ton cho. Trong thc t, c th c cc quy trnh o chnh xc cc i lng m
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
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khng phi ngt mch c kt qu ng so vi tnh ton l thuyt, khi cha c s r rng v
m hnh ng ca cc cu kin, tc l gi s cc m hnh phn trc khng m t c bn
cht vt l ca cc cu kin mt cch thch hp. Trong trng hp nh vy, s khng li gii
cho kt qu ng. Thc ra mc ch xuyn sut trong nghin cu l cho kh nng d on v
gii thch nguyn l hot ng thc t.
Nu khng mun mt nhiu thi gian, v tnh trng cha bit r rng ca gii php cng (mch
thc nghim), th c th da vo phn tch thun ty bng cch s dng cc phng trnh cho
tng phn t (chng hn nh nh lut Ohm v phng trnh diode). Hoc c th da vo cc
m hnh diode phn trn thay cho cc diode v sau thc hin vic phn tch mch thng
thng. Cc phn tch nh vy cn phi c cc gn ng v t cc m hnh l cc xp x. Ngoi
ra, cng c th khng a vo tnh ton nhiu iu kin vt l khc nh bin thin v nhit v
sai s ca cc cu kin.
Ngoi cc phng php phn tch mch trn, cc chng trnh m phng bng my tnh tr
nn ph bin trn cc PC. Kh nng v tc ca PC thng s dng m phng dng cho vic
phn tch mch ng hn l thit k mch, ngha l thng kim chng hiu sut ca mch m
trong c cc cu kin in t khc nhau c chn sn.
Cc chng trnh m phng cng c th dng thit k bng cch s dng k thut lp, chng
hn nh nu ta mun chn mt tr s in tr, ta c th phn tch mch theo cc tr s khc nhau
v chn mt tr s nhn c cc thng s thit k.
ng ti ca diode: Do diode l cu kin phi tuyn, cn phi thay i k thut phn tch mch
thng thng. Khng th vit cc phng trnh mt cch n gin v gii theo cc bin, v cc
phng trnh ch c th p dng trong phm vi vng lm vic c th.
Mt mch thng bao gm c hai in p ngun dc v ngun thay i theo thi gian. Nu ta
thit lp ngun bin thin theo thi gian bng 0, th nng lng ch c cung cp n mch t
ngun in p dc. Loi b ngun bin thin theo thi gian ra khi mch, s xc nh c in
p v dng ca diode c gi l im lm vic tnh (im - Q).
Hnh 2.21a, l mch gm mt diode, t, ngun cung cp v 2 in tr. Nu chn dng chy qua
diode v in p diode l i lng cn tm ca mch, th cn phi c hai phng trnh c lp
c cc i lng cn tnh c li gii duy nht cho im lm vic. Mt trong hai phng
trnh c suy ra t mch ni vi diode. Phng trnh th hai l quan h dng p thc t ca
diode. Hai phng trnh cn phi c gii ng thi, tc l c th thc hin bng th.
Nu xt trng thi dc u tin, th ngun in p s tr nn n gin l V
S
, v t s l mch h
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
33
(tc l tr khng ca t l v cng ti tn s bng 0). Vy phng trnh cho mch dc c th lp
c l:
1 D D R1 D S
R I V V V V + = + = (2.52)
hay:
1 D S D
R I V V = (2.53)
y l phng trnh th nht trong hai phng trnh ng thi c in p v dng ca diode. Ta
cn phi kt hp phng trnh (2.53) vi c tuyn ca diode xc nh im lm vic. th
ca phng trnh nh hnh 2.21b, gi l ng ti dc. c tuyn ca diode cng c th
hin trn cng mt trc ta . Giao im ca hai c tuyn l nghim chung ca hai phng
trnh nn k hiu l im tnh Q [Q quiescent] trn hnh v. y l im m ti mch s
lm vic vi tn hiu vo bin thin theo thi gian thit lp mc 0.
Nu t b sung tn hiu bin thin theo thi gian n u vo dc, th mt trong hai phng trnh
ng thi s thay i. Nu cho rng, tn hiu vo bin thin theo thi gian l tn hiu c tn s
cao cho php coi t in nh mt ngn mch, th s cho phng trnh mi nh sau:
) (
L 1 d d s
R R i v v + = (2.54)
) (
L 1 d s d
R R i v v = (2.55)
Ta ang ch xt cc thnh phn bin thin theo thi gian ca cc tham s khc nhau (lu vic
s dng cc k t vit thng cho cc bin s). Vy cc gi tr ca tham s ton b s l:
DQ d D
V v v + =
DQ d D
I i i + =
v phng trnh (1.37) s tr thnh:
s DQ D L 1 DQ D
) )( ( v I i R R V v + =
Phng trnh cui cng c tn gi l ng ti ac hnh 2.21b. Do phng trnh lin qua ch
vi cc i lng bin thin theo thi gian nn khng bit im ct trc ta . Tuy nhin,
ng ti ac cn phi i qua im Q, v ti cc thi im khi phn tn hiu vo bin thin theo
thi gian i qua im 0, hai trng thi lm vic (dc v ac) cn phi ng nht. Vy ng ti ac
xc nh c l duy nht.
V d 2.2: Cho mch nh hnh 2.22, v in p
ngun l: (V) 0,1sin1000 1,1
s
t v + =
Hy tnh mc dng chy qua diode i
D
. Bit rng, nV
T

= 40mV; V

= 0,7V.
Lp li php tnh bng cch s dng chng trnh m
phng trn my tnh.
Gii: p dng KVL c phng trnh dc, ta c:
L D S
R I V V + = , suy ra: mA 4
L
S
D
=

=
R
V V
I
Mc dng ny s thit lp im lm vic ca diode. Ta
cn phi xc nh in tr ng (s dng k hiu R
f
thay cho r
d
do b qua in tr tip xc gia
bn dn v in cc kim loi), c th xc lp in tr ca tip gip c phn cc thun i
vi tn hiu ac, ta c:
0 1
D
T
f
= =
I
nV
R
Lc ny ta c th thay th diode bng mt in tr 10 vi iu kin l diode s duy tr phn
cc thun trong chu k vo ca tn hiu ac. p dng tr li KVL, ta c:
d L d f s
i R i R v + = ; mA 1000 ,91sin 0
L f
S
d
t
R R
v
i =
+
=
Dng chy qua diode s l: ( ) mA 0 0,91sin100 4
D
t i + = .
V i
D
lun lun dng, diode s lun lun c phn cc thun.
Nu bin ca dng ac tr nn ln hn so vi gi tr dc ca dng i
D
, th i
D
s khng phi lun
lun dng, v gi thit l diode c phn cc thun l khng chnh xc. Do vy, li gii cn
phi c sa i, trong khi bin dng ac theo chiu m tr nn ln hn so vi gi tr dc,
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
34
th diode s tr nn b phn cc ngc v dng s ngng.
g) Kh nng x l cng sut
Cc diode c nh gi ty theo kh nng x l cng sut. Cc thng s c quy nh theo
cu trc vt l ca diode (tc l, kch thc ca tip gip, kiu v, v kch thc ca diode). Cc
ch tiu k thut do hng sn xut cung cp, dng xc nh kh nng v cng sut ca diode
trong khong nhit cho trc. Mt s diode nh cc diode cng sut nh gi theo kh nng
ti dng ca diode.
Mc cng sut tc thi tiu tn bi diode xc nh bng biu thc phng trnh (2.56),
D D D
i v p = (2.56)
Khi cc diode dn dng tng i ln, th diode cn phi c lp t sao cho nhit to ra trong
diode c th tiu tn ra khi diode. tiu tn nhit nng pht ra t bn trong diode, th phi lp
cnh tn nhit cho cc diode.
h ) in dung ca diode
Mch tng ng ca diode gm c mt t nh. in dung ca t ty thuc vo bin v cc
tnh ca in p t vo diode cng nh cc c tnh ca tip gip hnh thnh trong sut qu
trnh ch to.
Trong m hnh n gin ca tip gip diode th hin hnh 2.23, vng ti tip gip c rt
ht c in t v l trng. pha p ca tip gip c nng l trng cao, cn pha n c nng
in t cao. S khuych tn ca cc in t v l trng xy ra ln cn tip gip to ra dng
khuych tn ban u. Khi cc l trng khuych tn qua tip gip vo vng n, cc l trng nhanh
chng kt hp vi cc in t a s c trong vng n v trit tiu. Tng t nh vy, cc in t
khuych tn ngang qua tip gip, ti hp v bin mt, tc l to ra vng ngho (cn gi l vng
in tch khng gian) ln cn tip gip, v rt t cc in t v l trng. Khi t in p phn cc
ngc ngang qua tip gip, vng ngho s m rng, tc l lm tng kch thc ca vng ngho.
Vng ngho ng vai tr nh vng cch in, do diode phn cc ngc hot ng ging nh
mt t in c in dung thay i nghch o vi cn bc hai ca mc st p ngang vt liu bn
dn.
in dung tng ng ca cc diode tn s cao nh hn 5pF, v c th tr thnh in dung ln
khong 500pF cc diode dng ln (tn s thp). Cc thng s ca nh sn xut cn phi c
lu xc nh mc in dung cho trc theo iu kin lm vic cho.
2.5 MCH NGUN CHNH LU
ng dng c bn trc tin ca diode l chnh lu. Chnh lu (hay nn) l qu trnh chuyn tn
hiu xoay chiu (ac) thnh mt chiu (dc). Chnh lu c phn loi thnh chnh lu bn k
hoc chnh lu ton k.
a) Chnh lu bn k
Do mt diode l tng c th duy tr dng in chy ch theo mt chiu, nn diode c th dng
chuyn i tn hiu ac thnh tn hiu dc.
Hnh 2.24, l mch chnh lu bn k n gin. Khi in p vo dng, diode c phn cc
thun nn c th c thay bng mt ngn mch (gi s diode l l tng). Khi in p vo m,
diode c phn cc ngc nn c th thay bng mt mch h. Vy, khi diode c phn cc
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
35
thun, in p ra trn in tr ti c th xc nh t quan h mch phn p. Mt khc, trng
thi phn cc ngc, dng in bng 0 nn in p ra cng bng 0.
Hnh 2.24, th hin v d ca dng sng ra khi cho dng sng vo sin c bin khong 100V,
R
s
= 10, v R
L
= 90.
Mc in p trung bnh ca hm tun hon c tnh theo tch phn ca hm s trong mt chu
k ca hm tun hon, tc l bng s hng th nht trong khai trin chui Fourier ca hm s.
Lu rng, khi tn hiu vo sin c tr trung bnh bng 0, th dng sng ra c tr trung bnh l,

= =
/2
0
oavg

90 2
90sin
1
T
dt
T
t
T
V


Mch chnh lu bn k c th dng to ra tn hiu ra dc gn nh khng i nu dng sng ra
hnh 2.24, c lc (xem mc 2.5c). Lu mch chnh lu bn k c hiu sut rt thp. Trong
sut na bn k ca mi chu k tn hiu vo b ct b hon ton khi tn hiu ra. Nu c th
truyn nng lng vo n u ra trong sut bn k cn phi tng mc cng sut ra.
b) Chnh lu ton k
Mch chnh lu ton k s chuyn i nng lng vo n u ra trong c hai bn k ca tn
hiu vo v s lm cho mc dng trung bnh tng ln trong mt chu k. C th s dng bin p
trong mch chnh lu bn k c c c hai cc tnh m v dng. Mch tng ng v
dng sng ra nh hnh 2.25. Mch chnh lu bn k s to ra mc dng trung bnh gp i
mc dng trung bnh ca mch chnh lu bn k (t kim chng pht biu ny).
Chnh lu ton k c th khng s dng bin p, chng hn nh mch chnh lu cu hnh
2.26, cng thc hin vic chnh lu ton k.
Khi in p ngun c bn k dng, cc diode 1 v 4 s dn cn cc diode 2 v 3 l h mch.
Khi in p ngun chuyn sang bn k m, xy ra trng thi ngc li nn cc diode 2 v 3 dn,
nh ch r hnh 2.26b. Xt mch hnh 2.26a, s cho thy c th ngn mch thc t ca mch
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
36
chnh lu cu, nu mt u ca ngun c ni t, c hai u cc ca in tr ti c th c
ni t, s to ra vng t, lm ngn mch hiu dng mt trong cc diode. Do , cn phi b
sung mt bin p cho mch cch ly hai mc t tch bit nhau. Trong trng hp ny bin p
khng cn phi c im gia nh bin p ca mch chnh lu ton k hnh 2.25. Cng lu
rng, do c hai diode dn ni tip, st p ca diode l 2V

.
c) Mch lc
Cc mch chnh lu s cho in p dc dng xung (p mch) u ra. Cc xung ra gi l gn
sng ra, gn c th gim ng k bng cch lc tn hiu ra ca mch chnh lu.
Kiu lc thng dng nht l s dng t in mt chiu. Hnh 2.27a, l mch chnh lu ton k
c thm mt t mc song song vi in tr ti. Dng sng ca in p ra b thay i nh
hnh 2.28.
Trong ng dng thc t, cc diode cn phi mc ngc li v t gn vi mc th t nh mch
hnh 2.27b, tc l to cho anode c th t, nn cc diode c th c gn vi tm ni t,
bng cch cho php tiu tn nhit nng i vi cc mch chnh lu cng sut ln.
T in s np n mc in p cao nht (V
max
) khi cc mc nh ca tn hiu vo ti gi tr m
v dng nht. Khi in p vo gim thp hn gi tr nh, t in khng th x qua c hai
diode. Do vy, t x qua R
L
, tc l xut hin s suy gim theo hm m cho bi phng trnh:
C R t t
V V t v
L
/
max
/
max
e e ) (

= = (2.57)
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
37
Vic thit k mch lc bao gm chn tr s cho t C. Chng hn, cho tn hiu vo l sng sin c
bin 311V v mc in p ra thp nht c th nhn mch ng dng cho trc l 300V, suy
ra:
C R ' T
L
/
e 311 300

=
trong , T l khong thi gian x nh ch hnh 2.28. Ta c th tnh C theo T v R
L
nh
sau:
C R ' T
L
/
e 311 300

= hay:
C R
T'
L
ln1,037 = , v suy ra:
L
28 28
R
T'
, C =
Cng thc ny kh dng thit k mch lc, v T ph thuc vo hng s thi gian R
L
C, do
C cha bit. Ly gn ng khi l: T < T . i vi tn hiu vo c tn s 50Hz, th tn s c
bn ca tn hiu ra l 100Hz. Do vy,
ms 10
100
1 1
= = =
f
T
Ta c th tnh tr s ca t lc cn cho mt ti c th bng cch s dng ng thng gn ng
nh th hin hnh 2.29. Tnh C theo ng thng gn ng.
dc th nht ca hm m phng trnh (2.57) l:
C R
V -
m
L
max
1
=
l dc ca ng thng A hnh v. dc ca ng thng B hnh 2.29, l:
2
max
2
/ T
V
m =
Suy ra:
max
L
1
1
-
V
V C R
m
V
t = =
S dng cc tam gic ng dng, ta c:
max
min
2 1
2 2 2 V
V T T
t
T
t + = + =
v:
2
) / (2
max
max
L
1
V V T
V
V C R
t

= =
thay T = 1/f
P
, trong f
P
s lng xung trong mt giy (gp hai ln tn s ban u), ta c:

=
max P max P max
L
2

1
1
2
2
1
V
V
f V
V
f V
V
C R (2.58)
Trong phn ln cc thit k mch lc, u i hi gn cn phi nh hn nhiu so vi bin
dc, nn:
1
2

max
<<
V
V

V phng trnh (2.58) s tr thnh:
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
38
L P
max
R f V
V
C = (2.59)
Cng thc (2.59) l kt qu tnh ca bi ton thit k ch ng nu ng thng khng thp hn
V
min
, c tuyn theo hm m s vn gi trn gi tr V
min
.
S dng phng trnh (2.59) tnh t cho v d cho trn, vi gi thit tn hiu vo l sng
sin 50Hz, bin 311V v c in p ra c th nhn c thp nht l 300V, vy ta c V
max
=
311V, V = 11V, v tn s ca tn hiu ra mch nn ton k l f
P
= 100Hz, i vi mch nn
bn k f
P
= 50Hz,
Vy, t phng trnh (2.59),
( )
1
L L L P
max
s
0,283
100Hz 11V
11V 3


=

= =
R R R f V
V
C .
Mc gn sng khng tun theo dng tiu chun bt k no (v d nh dng sin hoc rng ca),
nn cn phi c mt s cch c trng ring v ln ca dng sng. in p gn V
r
(rms) s
c tnh theo:
3 2
(rms)
min max
r
V V
V

= (2.60)
Lu rng, s dng 3 mu s ng hn so vi 2 v vi ch s 2 dng tnh tr s hiu
dng ca sng sin bng bin chia cho 2 . i vi sng tam gic, tr s hiu dng bng bin
chia cho 3 . Cc ch s s c kim chng bng cch ly cn bc hai ca tr s trung
bnh bnh phng ca dng sng trong mt chu k. Dng sng ca gn gn vi dng sng rng
ca hn so vi sng sin. Tr s trung bnh ca in p gn c cho l im gia ca dng sng
(xp x). H s gn s c nh ngha l:
dc
r
(rms)
V
V
gon so He =
d) Mch nhn i in p
Hnh 2.30, l mch to ra mc in p bng khong hai ln mc in p ra nh ln nht (khi
khng ti), gi l mch nhn i in p. Lu rng mch ging nh mch chnh lu cu ton
k hnh 2.26a, nu khng c hai diode c thay bng hai t. Khi in p vo c cc tnh
nh hnh v, s c hai thnh phn dng
chy qua diode D
1
. Mt dng thnh phn
chy qua C
2
nn t s np ln mc V
max
.
Mt dng thnh phn khc thng qua in
tr ti v C
1
. Nu C
1
c np ln mc
V
max
trong chu k trc, th t s c mc
ngun in p hiu dng khc V
max
mc
ni tip vi in p ra ca bin p, nn ti
s c mc in p l gp hai ln mc in
p ln nht. Cc t cng c vai tr lm
gim mc in p gn ti u ra.
2.6 DIODE N P (ZENER)
Diode zener l cu kin bn dn c thc hin pha tp to thnh c tuyn in p nh
thng hay in p thc l rt dc. Nu in p ngc vt qu in p nh thng, thng diode
khng b ph hy vi iu kin dng chy qua diode khng c vt qu gi tr ln nht
c quy nh trc v diode khng b qu nhit.
Khi ht ti in to ra do nhit (thnh phn dng ngc bo ha) lm gim c ro th tip
gip (xem mc 2.2) v nhn nng lng do in th ngoi t vo, ht ti in s va chm vi
cc ion trong mng tinh th v truyn mc nng lng ng k ph v mi lin kt ng ha
tr. Ngoi ht ti in ban u, cc cp ht ti in in t - l trng cng c to ra. Cp ht
ti mi c th nhn mc nng lng ln t in trng t vo va chm vi ion tinh th khc
v to ra ngay cp in t - l trng khc. Tc ng lin tc nh vy s b gy cc mi lin kt
ng ha tr, nn gi l qu trnh nh thng thc l.
C hai c ch ph v cc mi lin kt ng ha tr. S dng in trng mnh ti tip gip c
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
39
th trc tip lm cho mi lin kt b gy. Nu in trng t vo mt lc ln vo in t trong
mi lin kt, th in t c th b bt khi mi lin kt ng ha tr, nn to ra mt s lng cp
in t - l trng hp thnh theo cp s nhn. C ch nh thng nh vy c gi l nh
thng zener. Tr s in p nh thng zener c iu chnh bng lng pha tp ca diode.
Diode c pha tp m c s c in p nh thng zener thp, ngc li diode c pha tp
long c in p nh thng zener cao.
Mc d nh m t trn c hai c ch nh thng, nhng thng thng c giao thoa. Ti cc
mc in p cao hn khong 10V, ch yu l c ch nh thng thc. Do hiu ng zener (thc
l) xy ra ti im c th xc nh trc, nn diode c th s dng nh mt b chun in p.
Mc in p ngc m ti xut hin nh thng thc l c gi l mc in p zener.
c tuyn ca diode zener in hnh th hin hnh 2.31. K hiu mch ca diode zener khc
vi k hiu mch ca diode thng thng, v c th hin trong cng hnh v.
Mc dng ngc ln nht, I
Zmax
m diode zener c th chu c ty thuc vo cch ch to v
cu trc ca diode. Gi s rng, mc dng zener nh nht m ti c tuyn vn gi ti V
Z
(gn im khuu ca c tuyn) l 0,1I
Zmax
. Mc cng sut ca diode zener c th chu ng
(V
Z
I
Zmax
) l mt yu t gii hn trong vic thit k ngun cung cp.
a) Mch n nh bng diode zener
Diode zener c th s dng lm b n nh in p nh mch hnh 2.32. Mch cho thy s
thay i dng ti tng ng vi s thay i ca in tr ti. Mch c thit k diode lm
vic vng nh thng, nn gn nh mt ngun in p l tng. Trong cc ng dng thc t,
in p ngun v
S
thay i v dng ti cng thay i. Nhim v thit k l chn tr s ca R
i

cho php diode duy tr mc in p ra gn nh khng i, ngay c khi in p ngun vo thay
i, cng nh dng ti thay i.
Thc hin phn tch mch hnh 2.36, xc nh ng tr s ca R
i
. Phng trnh nt ca mch
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
40
l:
L Z
Z S
R
Z S
i
i i
V v
i
V v
R
+

= (2.61)
Suy ra mc dng zener i
Z
, l:
L
i
Z S
Z
i
R
V v
i

= (2.62)
Cc i lng c th thay i trong phng trnh (2.62) l v
S
v i
L
. m bo diode vn
vng in p hng (vng nh thng), ta hy kho st hai m hnh ca trng thi vo/ra nh sau:
1. Mc dng chy qua diode, i
Z
l nh nht (I
Zmin
) khi dng ti, i
L
l ln nht (I
Lmax
) v mc
in p ngun, v
S
l nh nht (V
Smin
).
2. Mc dng chy qua diode, i
Z
l ln nht (I
Zmax
) khi dng ti, i
L
l nh nht (I
Lmin
) v mc
in p ngun, v
S
l ln nht (V
Smax
).
Khi cc c tnh ca hai m hnh c kt hp vo phng trnh (2.61), ta c:
Trng thi 1:
Zmin Lmax
Z Smin
i
I I
V V
R
+

= (2.63)
Trng thi 2:

Zmax Lmin
Z Smax
i
I I
V V
R
+

= (2.64)
Do tr s ca R
i
trong c hi phng trnh (2.63) v phng trnh (2.64) l mt, nn ta c th cn
bng hai biu thc c:
) )( ( ) )( (
Zmin Lmax Z Smax Zmax Lmin Z Smin
I I V V I I V V + = + (2.65)
Trong bi ton thc t, hp l nht l cho bit khong in p vo, khong dng ti, v mc in
p zener yu cu. Do vy phng trnh (2.65), s tng ng mt phng trnh theo hai n,
dng zener ln nht v nh nht. Xc nh phng trnh th hai bng cch xt c tuyn hnh
2.31. trnh phn c tuyn khng phi hng s, ta s dng quy tc kinh nghim l mc dng
zener nh nht s bng 0,1 ln mc dng zener ln nht, tc l:
Zmax Zmin
0,1I I =
Gii phng trnh (2.65) theo I
Zmax
, trong s dng tiu chun thit k c gii thiu
trn,
Smax Z Smin
Z Smax Lmax Smin Z Lmin
Zmax
0,1 - 0,9 -
) ( ) (
V V V
V V I V V I
I
+
= (2.66)
C th tnh c mc dng zener ln nht, c tr s ca R
i
t phng trnh (2.63) hoc (2.64).
V d 2.3: Thit k b n nh in p bng zener khong 10V (hnh 2.33) cho cc iu kin
nh sau: a) Khong dng ti t 100mA n 200mA v khong in p ngun t 14V n 20V.
b) Khong dng ti t 20mA n 200mA v khong in p ngun t 10,2V n 14V. S dng
diode zener 10V trong c hai trng hp.
Gii: a) Vic thit k bao gm chn gi tr in tr R
i
ph hp, v thng s nh mc cng sut
cho zener. S dng phng trnh t mc trn tnh mc dng ln nht ca diode zener v sau
tnh tr s in tr vo. T phng trnh (2.66), ta c:
533mA
20V 0,1 10V 0,9 14V
V) 0 1 200mA(20V 14V) 100mA(10V
0,1 - 0,9 -
) ( ) (
Smax Z Smin
Z Smax Lmax Smin Z Lmin
Zmax
=

+
=
+
=
V V V
V V I V V I
I
Tip theo, t phng trnh (2.64), tnh R
i
nh sau:
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
41
15,8
100mA 533mA
10V 20V
Zmax Lmin
Z Smax
i
=
+

=
+

=
I I
V V
R
S khng y nu ch xc nh in tr R
i
, nn cng cn phi chn cng sut nh mc thch
hp cho in tr. Mc cng sut ln nht cho bi tch ca in p v dng in, trong s
dng tr s ln nht cho mi i lng.
6,3W ) )( (
Z Smax Lmin Zmax R
= + = V V I I P
Cui cng, ta phi xc nh cng sut nh mc cho diode zener. Mc cng sut ln nht tiu
tn diode zener c tnh bng tch ca in p v dng in trn zener.
5,3W 10V 0,53A
Zmax Z R
= = = I V P
b) Lp li cc bc tnh trn theo cc thng s ca phn b, ta c:
4020mA -
V 4 1 0,1 10V 0,9 10,2V
V) 0 1 200mA(14V 10,2V) 20mA(10V
0,1 - 0,9 -
) ( ) (
Smax Z Smin
Z Smax Lmax Smin Z Lmin
Zmax
=

+
=
+
=
V V V
V V I V V I
I
Tr s I
Zmax
m cho bit bin gia V
Smin
v V
Z
l khng ln cho php thay i dng ti,
ngha l, trng thi xu nht ca in p vo l 10,2V v dng ti l 200mA, th zener khng
th cho kh nng duy tr 10V trn hai cc ca diode zener. Do , b n nh s khng hot
ng ng i vi tr s chn no ca in tr, nn ta c th tng in p ngun hoc gim
mc dng ra yu cu.
Mch n nh bng zener hnh 2.33, c th kt hp vi mch nn ton k hnh 2.25, to
thnh mch nn ton k c n nh in p bng zener nh hnh 2.34.
R
F
l in tr x, dng to ng x cho t khi tho ti (ti h). Cc in tr x thng c tr
s in tr cao khng tiu th nhiu cng sut khi mch hot ng. Tr s ca C
F
tnh theo
phng trnh tng ng (2.59). in tr trong phng trnh l in tr tng ng mc song
song vi C
F
. Diode zener c thay bng ngun in p V
Z
. in tr tng ng l do mch
song song ca R
F
vi R
i
. in tr R
i
mc ni tip trong mch trnh cc ngn mch hiu dng
ca R
L
ln diode zener. Do R
F
ln hn nhiu so vi R
i
, nn in tr song song c tr s gn bng
vi R
i
. Bi v in p ngang qua R
i
khng th bng 0 i vi mch nn ton k, nn V
max

phng trnh (2.59) cn phi c thay bng tng mc dao ng in p. Vy, t c tnh gn
ng bi phng trnh (2.67), trong cho t s bin p a l .
i p
Z Smax
F
R Vf
V V
C

= (2.67)
Mc in p ln nht t trn b n p l V
Smax
. V l mc gn nh nh, v f
p
l tn s c
bn ca tn hiu chnh lu (tc l tn s tn hiu ra ca mch chnh lu ton k gp hai ln tn s
ngun).
b) Diode zener thc t v n nh theo phn trm
mc trn ta gi thit diode zener l l tng, l vng nh thng thc l, diode lm vic
nh mt ngun in p hng, c ngha rng c tuyn hnh 2.31, l mt ng thng dc theo
vng nh thng. Trong thc t, on c tuyn nh thng khng phi chnh xc l mt ng
dc m c nghing no dn n mt in tr ni tip khc 0. in p nh thng ty
thuc vo mc dng m l ra l khng i. M hnh diode zener thc t nh hnh 2.35, thay
diode zener thc t bng mt diode l tng mc ni tip vi mt in tr R
Z
.
thy r cc nh hng ca in tr ni tip R
Z
, ta gi s rng diode zener thc t c kt
hp a vo v d 2.3a, vi in tr ca diode R
Z
= 2. Gi s I
Zmin
bng 10% ca I
Zmax
, hay
bng 0,053A. in p ra (song song vi ti) khng ln hn mc hng s 10V do R
Z
. Ta tnh cc
tr s nh nht v ln nht ca in p ra t hnh 2.34, theo cc mc dng nh nht v ln nht.
Mc in p ngang qua diode l tng hnh 2.35, l 10V, nn ta c th vit:
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
42
( ) 10,1V 2k 0,053A 10V
omin
= + = V
( ) 11,1V 2k 0,53A 10V
omax
= + = V
n nh theo phn trm c nh ngha bng tng mc dao ng in p xung quanh mc
in p n nh (hay mc n nh l tng). n nh theo phn trm nh hn s cho n nh
in p tt hn. Vy, v d trn,
10% 0,1
10V
10,1V 11,1V
%
onominal
omin omax
= =

=
V
V V
Reg (2.68)
n nh 10% c xem l km i vi nhiu ng dng. n nh s c ci thin khi gii
hn mc dng zener gi tr nh hn, v thc hin bng cch s dng mt mch khuych i
ni tip vi ti. Tc dng ca mch khuych i l gii hn cc bin thin ca dng chy qua
diode zener.
2.7 MCH XN V GHIM.
Cc diode c th dng xn tn hiu vo hay gii hn cc thnh phn ca tn hiu. Diode cng
c dng khi phc mc dc cho tn hiu vo.
a) Mch xn
Mch xn dng xn mt phn ca dng sng pha trn hoc pha di mc chun no .
Mch xn i khi cn gi l mch hn ch, mch chn bin , hay mch ct. Mch chnh lu
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
43
bn k phn trc s dng hot ng xn ti mc 0. Nu thm mt ngun pin ni tip vi
diode, mch chnh lu s xn mc trn hoc mc di ca mc in p ngun pin, ty thuc vo
chiu ca diode, nh minh ha hnh 2.36.
Cc dng sng ra hnh 2.36, cho rng cc diode l l tng. C th b qua gi thit l tng
bng cch b sung hai thng s m hnh diode. Mt l diode dn cn phi c in p trn
diode ln hn V

. Th hai, khi diode ang dn phi tnh n in tr thun R


f
. Hnh 2.37a, l
mch c sa i. nh hng ca V

l to mc xn V

+ V
B
thay cho V
B
. nh hng ca
in tr l thay i hot ng xn bng phng theo mc t l theo in p vo (tc l nh hng
ca mch phn p). Mc in p ra c tnh nh sau (xem hnh 2.37b).
i vi:
B i
V V v + < , ta c:
i o
v v =
i vi:
B i
V V v + > , ta c: ( )
f
B
f
f
i o
R R
R
V V
R R
R
v v
+
+ +
+
=
Ta c th thc hin ng thi c xn mc dng v xn mc m bng cc mch xn phn cc
song song, thit k bng hai diode v hai ngun in p mc theo hai chiu ngc nhau. Mch s
cho dng sng ra nh hnh 2.38, trong gi thit hai diode l l tng.
Suy rng cho cc diode thc t mc song song dn n kt qu hnh 2.37.
Mt kiu xn khc l mch xn phn cc ni tip, nh mch hnh 2.39. Ngun pin khong 1V
mc ni tip vi ngun tn hiu vo s lm cho tn hiu vo c chng chp ln ngun in p
1V dc, ng hn l i xng qua trc 0. Gi s mch s dng diode l tng, diode mch hnh
1.43, s dn ch trong khong thi gian tn hiu vo chuyn sang bn k m. Khi diode ang
dn, tn hiu ra bng 0. in p ra khc 0 khi diode ngng dn. mch hnh 2.39b, diode c
mc ngc li cng tng t nh trn. Khi tn hiu trng thi dng, diode s dn v c tn
hiu ra, nhng khi diode ngng, khng xut hin tn hiu ra. Mc d nguyn l hot ng ca
hai mch l khc nhau, nhng hai tn hiu ra l nh nhau. mch hnh 2.39c, v d, ngun pin
c o ngc cc tnh v dng sng ra nhn c nh hnh v.
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
44
V d 2.4: Tnh mc in p ra ca mch xn hnh 2.40a, gi thit rng: a) V

= 0; v b) V

=
0,7V. v R
f
= 0 trong c hai trng hp.
Gii: a) Khi V

= 0, vi v
i
dng v v
i
< 3V, suy ra: v
i
= v
o
.
Khi v
i
dng v v
i
> 3V, suy ra:
10 1,5
3V
4
i
1

=
v
i
1 3V 10
i 3
2
1
4
o
+ = + = v i v
i vi v
i
= 8V, th v
o
= 6,33V.
Khi v
i
m v v
i
> - 4V, suy ra: v
i
= v
o
.
Khi v
i
m v v
i
< - 4V, suy ra: v
o
= - 4V
Dng sng ra kt qu nh hnh 2.40b.
Khi V

= 0,7V, v
i
l dng, v v
i
< 3,7V, suy ra: v
i
= v
o
.
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
45
Khi v
i
> 3,7V, suy ra: i
1
= (v
i
3,7V)/1,5 x 10
4
,
1,23 3,7V 10
i 3
2
1
4
o
+ = + = v i v
i vi v
i
= 8V, th v
o
= 6,56V.
Khi V

= 0,7V, v
i
m v v
i
> - 4,7V, suy ra: v
i
= v
o
.
Khi v
i
m v v
i
< - 4,7V, suy ra: v
o
= - 4,7V
Dng sng ra kt qu nh hnh 2.40c.
b) Mch ghim
Dng sng in p c th c dch chuyn bng cch b sung mt ngun in p c lp, hoc
l ngun hng hoc l ngun ph thuc thi gian mc ni tip vi ngun tn hiu. Ghim l hot
ng dch mc m ngun b sung khng cn c lp vi ngun tn hiu na. Mc dch ty
thuc vo dng sng thc t. Hnh 2.41, th hin v d v vic ghim p.
Dng sng vo hnh 2.41, b dch bi mt lng lm cho mc nh ca dng sng b dch mc
ti tr s l V
B
. Vy mc dch l mc chnh xc cn thay i mc ln nht ban u V
m
n
mc ln nht mi V
B
. Dng sng l c ghim n gi tr V
B
. Nu ta bit tr s chnh xc
ca mc nh ban u V
m
, th ta c th thc hin dch mc nh bng mt ngun dc c lp mc
ni tip vi ngun tn hiu. c trng ring ca mch ghim l mch c th iu chnh dng sng
m khng cn bit dng chnh xc ban u. Mc dch c xc nh bi dng sng thc t. Nu
dng sng vo thay i, th mc dch s thay i theo dng sng ra lun lun c ghim
mc V
B
. Do vy, mch ghim s cung cp thnh phn dc theo mc cn thit nhn c mc
ghim yu cu. i vi v d, t trong mch hnh 2.41, s np n gi tr bng vi mc chnh
lch gia mc nh ca dng sng ban u v V
B
. T ng vai tr nh ngun pin c bin in
p V
B
mc ni tip, do vy lm dch dng sng n gi tr th hin hnh 2.41c.
Mch ghim l mch c kt hp gia ngun pin (hay ngun dc), diode, t in v in tr.
in tr v t in phi c chn c hng s thi gian ln. t np n gi tr khng i
v duy tr ti gi tr sut trong chu k ca dng sng vo. Nu in p trn t khng duy tr
gn nh khng i, th s dn n mo dng sng nhiu hn so vi dch n. Nu m bo iu
kin hng s thi gian ln v in tr thun ca diode c gi thit l bng 0, th dng sng ra
l bn sao ca dng sng vo vi mc dch thch hp. Mi khi mc ra vt qu V
B
, diode s
c phn cc thun v sng ra s c gii hn mc V
B
. Trong sut khong thi gian , t
s c np n gi tr l:
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
46
B m C
V V V =
Hnh 2.42, l mch ghim cho tn hiu ra s c ghim mc 0 (tc l khng c ngun pin nn
V
B
= 0). Bi v diode c mc ngc li so vi mch trc, nn mc thp nht ca tn hiu ra
s c ghim, tc l t in c th np ch theo chiu l s cng thm vi mc in p vo.
Mch th hin vi sng vung lm tn hiu vo. iu quan trng l mc in p ngang qua t s
duy tr gn nh khng i trong sut bn k ca dng sng vo. Theo kinh nghim thit k
mch, hng s thi gian RC thp nht bng 5 ln khong thi gian ca bn k (tc l 5 ln t
1
t
0

hoc t
2
t
1
). Nu tun theo nguyn tc thit k, th mch RC phi c t nht l 20% ca hng s
thi gian np hoc x trong sut bn k, ngha l s thay cho tr s cui cng trong khong
18% ca gi tr ban u (tc l, exp(-0,2) = 0,82). Nu hng s thi gian qu nh, dng sng s
b mo dng nh ch hnh 2.42c. lm gim sai lch n mc thp nht so vi 18%, th c
th tng hng s thi gian (ngha l, tng ln gp 10 ln khong thi gian ca bn k).
2.8 B CHUYN I MC IN P DC - DC
Trong hu ht cc h thng in t, ngun cung cp cn phi c nhiu mc in p. Mt trong
nhng phng php to ra cc mc in p l s dng hng lot cc mch chnh lu bn k hoc
ton k. Tuy nhin, in p ra ca cc mch chnh lu c quyt nh bi in p ca bin p,
nn bin p cn phi c nhiu u ra. Ngoi ra, hu ht cc mch chnh lu thng hot ng
tn s thp 50Hz, hoc 60Hz nn cc bin p c kch thc v trng lng ln.
Mt phng php linh hot hn l s dng cc mch bin i dc sang dc hiu sut cao c th
hot ng ti cc tn s cao hn nhiu, bng cch nh vy s lm gim kch thc v trng
lng ca cc cun in cm trong mch. Mch bin i dc sang dc s dng in p vo dc v
s cung cp in p ra c iu khin bng in t vi di bin i lin tc. Mc ny s cp
hai kiu b bin i dc sang dc: b bin i tng s to ra in p u ra ln hn in p u
vo, v b bin i gim m in p ra s thp hn so vi in p vo.
a) B bin i kiu tng p
Mch ca b bin i tng [boost converter] c bn nh hnh 2.43a. Phn chnh ca b bin
i l cun cm L v chuyn mch S s c chuyn mch ng v m mt cch nh k, nh
ch r hnh 2.43b. Chuyn mch s kn mch trong khong thi gian T
on
v h mch trong
khong thi gian T
off
. Chuyn mch tun hon theo chu k T = T
on
+ T
off
. Diode D cng s hot
ng nh mt chuyn mch nn diode s ngng khi S kn mch v ngc li. in p vo dc s
c cung cp bi ngun V
S
, cn R v C tng ng vi in tr ti v t lc.
Trong cc phn tch sau ta gi thit l mch c hot ng trng thi n nh v bt k qu
trnh qu khi khi u u c loi b, tc l mch ang hot ng trng thi tun hon.
Chuyn mch S ng
Trong khong thi gian T
on
chuyn mch S kn mch, m in p u ra xc nh c l s ln
hn 0, diode D
1
s phn cc ngc, suy ra mch tng ng hnh 2.44a. n gin s
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
47
dng m hnh diode l tng. in p vo dc V
S
lc ny s xut hin trc tip trn cun cm, v
dng in trong cun cm ti thi im kt thc ca khong thi gian T
on
l:
on
S
L
0
S
L
0
S
L on L
) (0 ) (0 ) (0 ) (
on
on
T
L
V
i t
L
V
i dt
L
V
i T i
T
T
+ = + = + =
+ + +

(2.69)
Trong khong thi gian (0, T
on
), dng chy qua cun in cm tng dn theo tc hng nh th
hin hnh 2.45. V dng trong cun in cm khng th thay i tc thi, i
L
(0
+
) s bng vi
mc dng ngay trc khi chuyn mch thay i trng thi.
Chuyn mch S h mch
Khi chuyn mch h mch, diode s dn, to ng dn cho dng in cm chy qua diode,
in tr ti R v t lc C nh th hin hnh 2.44b. n gin trong vic phn tch, gi s
rng in p gn tn hiu ra l nh in p ra phi gn bng mc in p dc, tc l v
o

V
O
. Vi gi thit trn, in p trn cun in cm s khng i nh trc v bng vi V
S
V
O
.
Dng chy qua cun cm ti thi im kt thc ca khong thi gian T
off
(tc l: t = T
on
+ T
off
=
T) l:
off on
on
off on
on
O S
on L
O S
on L L
) ( ) ( ) (
T T
T
T T
T
t
L
V V
T i dt
L
V V
T i T i
+
+

+ =

+ =

(2.70)
off
O S
on
S
L L
) 0 ( ) ( T
L
V V
T
L
V
i T i

+ + =
+
(2.71)
Khi V
O
vt qu V
S
, dng cun cm s gim theo thi gian trong sut khong thi gian T
off
lp
li nh th hin hnh 2.45. Ngoi ra, do mch hot ng tun hon vi chu k T, nn dng in
cm ti cc thi im t = 0
+
v t = T cn phi ng nht. V vy,
) 0 ( ) (
L L
+
= i T i nn:
off
S O
on
S
T
L
V V
T
L
V
= (2.72)
Quan h c bn gia in p ra v vo ca mch bin i tng l:
off O off on S
) ( T V T T V = + hay:

V
T
T
V
T
T
V V

= =
1
1
S
on
S
off
S O
(2.73)
trong : = T
on
/ T c gi l h s y xung [duty cycle] ca dng sng chuyn mch. in
p ra c th thay i c bng cch bin i h s y xung ca chuyn mch. Do 0 1,
nn in p ra V
O
V
S
; b bin i s lm tng mc in p ra cao hn mc in p vo.
Tnh mch lc
Lu rng, biu thc ca in p ra phng trnh (2.73) l c lp vi L. Thng s thit k
cn b sung chn gi tr in cm L l dng gn trong cun in cm. Bi v in p trn
cun in cm l khng i trong sut c hai khong thi gian T
on
v T
off
, dng in cm c
dng sng rng ca nh m t hnh 2.45 [xem phng trnh (2.69) v (2.70)]. Bin ca
dng gn I
r
c tnh theo hai cch:
on
S
r
T
L
V
I = hoc
off
S O
r
T
L
V V
I

= (2.74)
Mc dng gn hai cch tnh cn phi nh nhau. T phng trnh (2.74), rt ra biu thc cho
tr s ca cun cm:

f I
V
T
T
I
T V
T
I
V
L
r
S on
r
S
on
r
S
=

= = (2.75)
trong , f = 1/T l tn s ca chuyn mch. T phng trnh (2.75), ta thy rng vic chn tn
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
48
s lm vic cao hn th s c tr s in cm cn thit nh hn. Cc b bin i in p dc sang
dc c th hot ng ti cc tn s trn 60Hz gim kch thc ca L v f thng c chn cao
hn di tn s tn hiu tai ngi nghe c (tn s m tn). Thng thng di tn s t 25kHz
n 100kHz.
Dng vo dc
Trong mch tng in p, dng in cm trung bnh I
L
ln hn so vi dng ti dc. i vi b
bin i l tng, khng c c ch suy hao trong mch. Do vy, cng sut c phn b n
u vo ca b bin i cn phi bng cng sut phn chia in tr ti R:
O O S S
I V I V = hoc:
-
I
T
T
I I
V
V
I
1
O
off
O O
S
O
S
= = = (2.76)
T phng trnh (2.76), ta thy rng dng dc trong cun in cm l ln hn so vi dng ti mt
chiu bng cng h s khi tng in p ra. Lu rng cun in cm cn phi c thit k
chnh xc c kh nng hot ng vi gi tr ln ca dng trung bnh.
in p gn v in dung ca mch lc
b bin i tng p, t lc C c thit k iu chnh mc in p gn V
r
theo cch tng
t nh t lc trong mch nn. Trong sut khong thi gian T
on
, diode D ngng dn, nh mch
hnh 2.44a, nn t cn phi cung cp ton b dng ti. Nu in p gn c thit k c bin
nh, th dng x gn nh khng i (hng s) v c tnh theo I
O
V
O
/R. Da vo mc gn
ng ny, in p gn c th c tnh theo:

RC
T V
T
T
RC
T V
RC
T V
T
C
I
V
O on O on O
on
O
r
=

= = (2.77)
Bng 2.1, tm tt cc cng thc thit k cho b bin i tng in p dc dc
BNG 2.1: Thit k b bin i tng in p
in p ra

V
T
T
V
T
T
V V

= =
1
1
S
on
S
off
S O

Dng in ngun cung cp
-
I
T
T
-
I
T
T
I I
1
1
O
on
O
off
O S
= = =
Cun in cm

f I
V
T
T
I
T V
T
I
V
L
r
S on
r
S
on
r
S
=

= =
T lc

RC
T V
T
T
R V
T V
C
O on
r
O
=

=
b) B bin i gim p
Mch bin i gim p [buck converter] nh hnh 2.46, c thit k to ra in p u ra
l thp hn so vi in p u vo. Nguyn l hot ng ca b bin i gim p hnh 2.46,
tng t hot ng ca b bin i tng p, v chuyn mch S s hot ng mt cch tun hon
vi cng kiu nh thi nh hnh 2.43a.
Chuyn mch S kn mch
Trong khong thi gian T
on
, chuyn mch S kn mch, nn diode D s c phn cc ngc theo
in p vo dng dn n mch tng ng hnh 2.46b. Gi s in p gn ti u ra kh
nh in p u ra c th xem gn ng mc in p hng v
O
V
O
, suy ra mc in p trn
cun in cm s bng V
S
V
O
, v mc dng in cm ti thi im kt thc ca khong thi
gian T
on
s l:
on
O S
L
0
O S
L on L
) (0 ) (0 ) (
on
T
L
V V
i dt
L
V V
i T i
T

+ =

+ =
+ +

(2.78)
V dng chy trong cun in cm khng thay i tc thi, nn i
L
(0
+
) s bng vi mc dng
ngay trc khi chuyn mch thay i trng thi.
Chuyn mch S h mch
Khi chuyn mch S chuyn sang h mch, diode s chuyn sang dn, to ng dn lin tc cho
dng in cm t im t qua diode n in tr ti R v t lc C nh m t hnh 3.72c. in
p trn in cm lc ny bng vi V
O
. Dng in cm ti thi im kt thc ca T
off
l:
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
49
off
O
on
O S
L
O
on L L
) (0 ) ( ) (
off on
on
T
L
V
T
L
V V
i dt
L
V
T i T i
T T
T

+ =

+ =
+
+

(2.79)
Tuy nhin, mch hot ng tun hon vi chu k T. Do , dng in cm ti cc thi im t =
0
+
v t = T cn phi ng nht, nn ta c:
) (0 ) (
L L
+
= i T i v:
off
O
on
S O
T
L
V
T
L
V V
=

(2.80)
Rt gn phng trnh s c quan h c bn gia in p u ra v in p u vo ca b bin
i gim p:

S
on
S O
V
T
T
V V = = (2.81)
Trong , l h s y xung ca chuyn mch. Do T
on
T, in p ra V
O
V
S
. b bin i
gim p in p cun in cm s lm gim in p vo, nn in p u ra l thp hn so vi
in p u vo. in p ra ca b bin i gim p t l thun vi h s y xung .
Tnh in cm
Quan h gia in p vo v ra c biu din theo phng trnh (2.81) li c lp vi L, nn
vic tnh tr s in cm s c quyt nh bi thng s dng gn.
Dng sng dng in cm ca mch bin i gim p l rt ging vi dng sng dng in
mch bin i tng p nh hnh 3.73. Bin dng gn I
r
c tnh bi:
off
O
on
O S
r
T
L
V
T
L
V V
I =

= (2.82)
T phng trnh (3.93) suy ra biu thc cho gi tr ca cun in cm:
( ) =

= = 1 1
r
O on
r
O off
r
O
off
r
O
f I
V
T
T
I
T V
T
T
I
T V
T
I
V
L (2.83)
Trong mch bin i gim p, dng dc I
L
bng vi dng ti I
O
. Dng cn phi c cung cp t
ngun V
S
s c tnh theo:
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
50
O O S S
I V I V = hoc:
O
on
O
S
O
O S
I
T
T
I
V
V
I I = = = (2.84)
T phng trnh (2.84), ta thy rng dng vo dc n b bin i l thp hn mc dng ti.
in p gn v in dung ca t lc
mch bin i gim p, ch dng gn cn phi c hp th bi t lc C. in p thay i
theo chiu dng trn t cn phi cn bng vi in p thay i theo chiu m, bng vi in p
gn V
r
:
C
Q
dt i
C
V
T T
/ T
1
)/2 (
2
r r
off on
on

+
= = trong :
8 2 2 2
1

r off on r
T I T T I
Q =

+
=

= (2.85)
Tch phn ca dng in trn t l kt qu ca tng thay i v in tch Q trn t lc nn s
tng ng vi din tch vng tam gic t m hnh 2.47. Biu thc ca tr s in dung c th
xc nh bng cc phng trnh (2.83) v (2.85):
( )
L
T
V
V
V
T I
C = = 1
8 8
2
r
O
r
r
(2.86)
Bng 2.2 tm tt cc cng thc cn thit thit k b bin i gim p.
BNG 2.2: Thit k b bin i gim p
in p ra V
T
T
V V
S
on
S O
= =
Dng in ngun cung cp
O
on
O S
I
T
T
I I = =
Cun in cm
( ) =

= 1
r
O off
r
O
f I
V
T
T
I
T V
L
T lc
( ) = = 1
8 8
2
r
O
r
r
L
T
V
V
V
T I
C

2.9 CC THNG S K THUT CA DIODE
C rt nhiu loi diode, v tt c cc loi diode ch cho php dng in chy qua khi c phn
cc thun, v chn dng chy khi c phn cc ngc. S khc nhau cc diode c th thy
cc thng s in c lit k cc trang s liu v diode. in p ngc lp li nh hay i
khi gi l in p ngc nh (PIV), v dng thun trung bnh l hai thng s quan trng nht
khi s dng diode. Su thng s in hnh thng c cc trang s liu v diode.
1. in p ngc lp li nh (
RRM
V ) l in p ngc ln nht c th c p t lp li trn
diode. Lu rng thng s ny cng chnh l thng s nh mc PIV. Thng s in p ngc
c th c cc loi diode trong khong t 5V n 2000V.
2. Dng thun trung bnh (
0
I ) l gi tr dng in c th chy qua diode lin tc ln nht khi
diode c phn cc thun. Mc dng thun ln nht c th trong khong t vi mA n trn
1000A.
3. Dng thun xung nh (
FSM
I ) l bin ln nht ca xung dng thun m diode c th chu
ng c. Gi tr in hnh l t 10 30 ln ln hn thng s dng thun trung bnh. V d,
mt diode c mc dng thun trung bnh l 12A th c th c mc xung dng thun nh l
250A.
4. St p thun (
F
V ) l mc st p ln nht ngang qua diode khi c phn cc thun. Mc st
p in hnh ngang qua diode silicon khi c phn cc thun l 0,7V; tuy nhin, cc trng
thi dng cao hn, mc st p c th cao hn ng k. Thng thng, st p thun ln nht cho
theo mc dng thun trung bnh ln nht (
0
I ).
5. Dng ngc (
R
I ) l mc dng r ln nht chy qua diode khi c phn cc ngc. Dng
ngc b nh hng ln do nhit lm vic ca diode.
6. Thi gian hi phc ngc (
rr
t ) l khong thi gian cn thit diode ngng dn khi diode
c chuyn sang phn cc ngc. Thi gian hi phc ngc l thng s quan trng c bit
i vi cc diode chuyn mch tc cao.
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
51
Cu to ca diode s quyt nh mc dng lm vic, mc cng sut c th tiu tn, v mc in
p ngc ln nht m diode c th chu c khng b hng. Mi hng sn xut cho tiu chun
theo cc trang s liu v cu kin. Cc thng s chnh c trang s liu ca hng sn xut i
vi mt diode chnh lu nh sau:
1. Loi cu kin vi ch s thng thng hay cc s ca hng sn xut.
2. in p ngc nh (PIV).
3. Dng ngc ln nht ti PIV.
4. in p thun dc ln nht.
5. Mc dng thun chnh lu bn k trung bnh.
6. Nhit tip gip ln nht.
7. Cc c tuyn suy gim mc dng.
8. H c tuyn cho cc thay i v nhit cu kin c th b suy gim cc nhit
cao hn.
Trong trng hp diode zener, cc thng s sau thng c cc trang s liu:
1. Loi cu kin theo ch s thng thng hay s ca nh sn xut.
2. in p zener bnh thng (in p nh thng thc).
3. Mc sai s ca in p.
4. Mc tiu tn cng sut ln nht ( 25
o
C).
5. Dng o th I
ZT
.
6. Tr khng ng ti mc I
ZT
.
7. Mc dng khuu.
8. Nhit tip gip ln nht.
9. H s nhit .
10. H c tuyn suy gim i vi cc nhit cao hn.
Chn thng s k thut v d v xem thng tin cho trang s liu. S dng diode chnh lu
1N4001 th hin ph lc D, c cc thng s nh sau:
1. PIV = 50V.
2. Dng ngc ln nht (ti in p dc nh
mc) 25
o
C l 10A. 100
o
C c mc
dng ln nht l 50A.
3. St p thun tc thi ln nht ti 25
o
C l
1,1V.
4. Dng thun chnh lu trung bnh ti 25
o
C
l 1A.
5. Khong nhit lm vic chu trong thi
gian di ca tip gip (T
J
) l 65
o
C n +
175
o
C.
Hnh 1.49, l c tuyn suy gim dng in in
hnh, cho bit cn phi iu chnh mc dng nh
mc khi nhit tng vt qua nhit mi
trng xung quanh. c tuyn tng t thng
cho theo thng s suy gim cng sut.

2.10 CC LOI DIODE BN DN C BIT
a) Diode bin dung
Diode bin dung hay varactor, l loi cu kin bn dn c chc nng nh mt t in c th thay
i. Nhc li rng, t in l mt linh kin gm hai bn cc dn in c cch ly bng mt lp
in mi (vt liu cch in). Tr s in dung ca t ph thuc vo ba yu t: din tch ca hai
bn cc, khong cch gia hai bn cc, v loi vt liu lm in mi cch ly gia hai bn cc.
in dung t l thun vi din tch ca hai bn cc (A) v h s din mi , t l nghch vi
khong cch (d) gia hai bn cc:
d / A C =
Hnh 2.49a, l cu trc bn trong ca diode khi c phn cc ngc, bao gm hai vng c cc
ht ti in (vng p v vng n) c cch ly bi vng ngho khng c cc ht ti in. Diode
khi c phn cc ngc ng vai tr tng t mt t in. Hai vng p v n c chc nng nh
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
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hai bn cc dn in, cn vng ngho c chc nng nh mt lp in mi. Hnh 2.49b, cho thy
khi in p phn cc ngc tng ln, th vng ngho s rng ra. T vn c in dung nhng v
hai vng dn cch xa hn nn in dung b gim xung.
Varactor l mt diode c ch to c in dung tip gip cao. Tr s in dung ca varactor
c iu khin bng ln ca in p phn cc ngc t vo varactor. in p phn cc
ngc ln hn th in dung ca varactor s nh hn. Hnh 2.50, l k hiu v c tuyn in
dung theo in p phn cc ngc ca diode bin dung mang s hiu MVAM 108.
Mch hnh 2.51, l mch iu chnh chn tn s ca tn hiu t antenna s dng diode bin
dung. Khi cng hng, mch iu hng song song c tr khng cao. Tn hiu t antenna ti tn
s cng hng ca mch iu hng s to ra mt st p trn tr khng cao ca mch iu
hng nn tn hiu s c khuych i. Cc tn s tn hiu ti cc tn s khc s xem mch
iu hng nh mch c tr khng thp so vi t nn s khng c a n mch khuych
i. Gi tr in dung tng ng ca mch cng hng bng 500pF mc song song vi nhnh
2 t c in dung 0,1F v in dung ca diode bin dung. V d 2.5, l mch iu hng s
dng diode bin dung MVAM108 iu chnh tn s cng hng.
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
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V d 2.5: Hy tnh tn s cng hng ca mch iu hng [tuner] hnh 2.51, theo hai mc
in p t vo l (a) 1V v (b) 7V.
- T c tuyn in dung theo in p ngc hnh 2.50, ta xc nh c tr s in dung ca
diode bin dung ti in p phn cc ngc 1V v 7V: (a) 500pF @ 1V; (b) 55pF @ 7V.
- Tnh in dung tng ng ca mch iu hng. V in dung tng ng ca diode bin
dung l nh hn nhiu so vi 0,1F, nn in dung ca mch ni tip s bng tr s in dung
ca varactor. Tng in dung tng ng ca mch cng hng bng gi tr in dung ca
varactor song song vi 500 pF.
(a) C
eq
@ 1V = 500pF + 500pF = 1000pF
(b) C
eq
@ 7V = 55pF + 500pF = 555pF
- Tnh tn s cng hng ti c hai mc in p t vo diode bin dung:
LC
F
R

=
2
1

(a) 504kHz
1000pF H 100 2
1
=

=
R
F (b) kHz 76 6
pF 55 5 H 100 2
1
=

=
R
F
b) Cc diode chuyn mch tn s cao.
Gii thiu.
Diode bin dung l mt v d ng dng gi tr in dung c trong diode tip gip pn khi c
phn cc ngc. Tt c cc diode tip gip pn u c mt gi tr in dung no ; in dung
ca tip gip pn khng ng k khi s dng diode tip gip mch tn s thp, nhng mch lm
vic di tn s cao, th dung khng (X
C
) ca tip gip pn c th lm gim n mc khng cn
dng ngc.
Thi gian hi phc ngc (t
rr
) l thi gian cn thit diode ngng dn khi diode c phn
cc ngc. Thng s thi gian hi phc ngc tr thnh yu t quan trng ti tc chuyn
mch cao. Cc diode chnh lu tn s thp c thng s thi gian hi phc ngc nh mc vo
khong vi microsecond, ngc li cc diode chuyn mch tc cao c thi gian hi phc
ngc vo khong vi nanosecond. Cc nh sn xut ch to cc diode chuyn mch tn s
cao c th lm vic ti cc tn s trn 3000MHz.
Diode hi phc bc thang.
Diode hi phc bc l diode tip gip pn. Vt liu p v n gn tip gip c pha tp long. S
pha tp vt liu bn dn s c tng dn theo khong cch tng ln t tip gip. Diode hi
phc bc s lm gim in dung tip gip nn cho php diode hi phc bc lm vic tn s
cao. K hiu mch ca diode hi phc bc nh vi diode thng thng.
Diode PIN.
Hnh 2.52, l cu to ca diode PIN, vi vng vt liu bn dn P v N c pha tp m c
cch ly bng mt vng khng pha tp hay vt liu bn dn thun. Tn gi diode PIN bt ngun
t loi vt liu bn dn c s dng trong cu trc ca diode. Vt liu thun ng vai tr nh
cht in mi phn cch hai vng dn. S ngn cch hai vng dn s lm gim in dung tip
gip ca diode nn diode PIN c th c s dng tn s cao. K hiu mch ca diode PIN
nh k hiu ca diode thng thng.
Diode Schottky.
Diode Schottky cn c gi l diode ht ti nng [hot - carrier diode] khng c tip gip pn,
m tip gip ca diode Shottky c to thnh bng mt tm chn kim loi (vng, platinum,
bc) v vt liu bn dn - n (hnh 2.53). Diode Schottky c c tuyn dng p tng t nh
diode tip gip pn, ngoi tr in p m thun V

trong khong t 0,3V n 0,6V. in dung


CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
54
lin quan vi diode Schottky l cc nh. Khi diode Schottky lm vic ch phn cc thun,
dng in c to ra bi s di chuyn ca cc in t t silicon dng n thng qua ro chn v
lp kim loi. Do cc in t ti hp tng i nhanh khi qua lp kim loi, thi gian ti hp ngn
vo khong 10ps, nhanh hn nhiu so vi diode tip gip pn thng thng, nn diode Schottky
c ngha ln trong cc ng dng chuyn mch tc cao.
Diode Schottky c s dng nhiu trong cng ngh mch tch hp do d ch to v c th sn
xut ng thi cc cu kin khc trn mt chip. Vic ch to mt diode tip gip pn i hi
khuych tn bn dn dng p nhiu hn so vi diode Schottky, nhng vic ch to diode Schottky
c th yu cu b sung bc ph kim loi. Cc c tnh tp m thp ca diode Schottky to cho
diode l tng i vi ng dng trong vic gim st cng sut ca di tn radio mc thp, cc
mch tch sng tn s cao, v cc b trn trong radar Doppler.
Li th ca diode Schottky l mc st p thun ca n thp v tc chuyn mch ca diode.
Cc diode Schottky c th c ch to c thi gian ng m vo khong 10nS. Do tc
chuyn mch cao v st p thun thp, cc diode Schottky thng c s dng trong cc b
ngun cung cp kiu chuyn mch. K hiu mch ca diode Schottky nh hnh 2.53.
c) Diode pht quang - LED [light - emitting diode]
Mt s loi diode khc c kh nng bin i nng lng in thnh nng lng sng. Diode
pht quang s chuyn i dng in thnh nh sng rt hiu qu trong cc loi hin th khc
nhau v i khi c th s dng lm ngun pht sng cho cc ng dng thng tin bng cp si
quang.
Mt in t c th ri t di dn vo mt l trng v pht ra nng lng di dng mt photon
ca nh sng. Cc lin quan ca xung lng v nng lng trong silicon v germanium nh vy
lm cho in t pht ra nng lng di dng nhit nng khi in t tr li t di dn xung di
ha tr. Tuy nhin, in t trong tinh th gallium arsenide s to ra photon khi in t ri tr li
t di dn xung di ha tr. Mc d khng c in t trong tinh th to ra nh sng c th
nhn thy khi p t phn cc thun, mt s lng ln in t s c phng thch t vt liu n
vo vng vt liu p. Cc in t s kt hp vi cc l trng trong vng vt liu p ti mc
nng lng ca di ha tr, nn cc photon s c bc x. Cng sng t l vi tc ti
hp ca cc in t v do t l vi dng in ca diode. Diode bng gallium arsenide s pht
ra sng nh sng ti bc sng gn di hng ngoi. to ra nh sng di c th nhn thy cn
phi trn gallium phosphide vi gallium arsenide.
Khi LED ang dn, mc st p thun vo khong 1,7V. Lng nh sng pht ra bi LED ty
thuc vo mc dng chy qua diode; mc dng ln hn s pht ra nh sng r rt hn. Cn phi
lp ni tip vi LED mt in tr hn dng trnh lm hng diode. Tr s ca in tr hn
dng d dng tnh bng mc dng dn gii hn ca LED vo khong 10mA, vi in p dn ca
diode vo khong 1,7V. V d cn phi chn in tr hn dng LED pht ra nh sng thch
hp khi t mc ngun 5Vdc n LED nh mch hnh 2.54a. Vi mc dng gii hn chy qua
LED vo khong 10mA khi LED dn v mc in p dn l 1,7V, st p trn R
CL
l: 5V 1,7V
= 3,3V. Vi mc dng ln nht khong 10mA, th tr s in tr ca R
CL
= 330. Chnh l tr s
in tr thng dng cho vic s dng ngun 5V c LED hin th.
d) Photodiode
Photodiode hay Quang diode c chc nng ngc li so vi LED, tc l photodiode s bin i
nng lng sng thnh dng in. p dng phn cc ngc cho photodiode nn dng bo ha
ngc s c iu chnh bng cng nh sng chiu vo diode. nh sng s to ra cc cp
in t - l trng, tc l gy ra dng in. Kt qu l mc dng quang mch ngoi s t l theo
cng nh sng chiu vo cu kin. Diode hot ng nh b to dng hng vi iu kin
in p khng vt qu in p nh thng thc l. Thi gian p ng nh hn 1s. nhy
ca diode c th tng ln nu vng tip gip c ch to ln hn khi thu nhn nhiu photon
hn, nhng iu ny cng s lm tng thi gian p ng do in dung tip gip (v do hng s
thi gian RC) tng.
Cu to ca photodiode gm mt mu vt liu bn dn tp - p c khuych tn vo bng vt
liu bn dn tp - n hnh thnh tip gip pn. Vt liu tp - n c l sng thng qua mt
ca s. Photodiode c ch to lm vic ch phn cc ngc nh hnh 2.54b, ch
phn cc ngc dng chy qua diode ph thuc vo dng cc ht ti thiu s. Trong photodiode,
lng cc ht ti thiu s t l thun vi lng nh sng chiu vo qua ca s. V c bn mt
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BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
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photodiode l mt in tr nhy sng, cng sng ln hn s lm cho gi tr in tr phn
cc ngc thp hn. Photodiode c p ng thay i theo cng sng nhanh hn so vi tt c
cc dng c quang. Nu b sung mt lp bn dn thun vo cu to ca photodiode gia lp bn
dn tp loi - p v n th c th ci thin hiu sut ca photodiode, do vng khng pha tp b
sung c tc dng lm cho vng ngho rng ra. Bi v vng ngho rng hn nn cc photon vo
ca s ca diode c kh nng to ra cp in t / l trng nhiu hn nn lm cho diode c hiu
sut cao trn mt di tn s nh sng rng hn. Hn na, vng ngho rng hn s lm gim in
dung ca diode nn cho thi gian p ng nhanh hn. Cc photodiode c b sung lp bn dn
thun thng gi l photodiode PIN.
Hnh 2.54b, l mch photodiode. Hnh 2.54c, l c tuyn theo cc cng nh sng H khc
nhau. Dng photodiode I
P
c th tnh t phng trnh sau:
qH I =
P

trong , l hiu sut lng t; q in tch ca in t, 1,6 x 10
- 19
C; H = x A l cng
nh sng (s lng photon trong mt giy); l mt thng lng photon (s lng photon
trong mt giy trong mt cm vung); A l din tch tip gip (tnh theo cm
2
).
Phn ln cc b tch sng nh sng bng bn dn gm mt tip gip photodiode v mt mch
khuych i, thng l t trn mt chip n.
e) B bo v qu in p.
Hnh 2.55, l mch hai diode zener mc i u nhau ni ngang qua ng dy ngun cung cp
ac bo v thit b in t khng b qu in p ngun cung cp ac. in p nh ca ng
dy 220Vac l khong 310V
P
. Thit b in t c mch ngun cung cp c thit k vi in
p ng dy ac u vo v bin i in p ac thnh cc mc in p dc cn thit. i khi c
cc thng ging in p ngun cung cp xut hin trn ng dy in ac lm cho in p nh
ln n hng ngn volt do sm st chng hn, hoc do cc vic ng ct cc ti in cm cng c
th gy qu p trn ng dy.
Nu hai diode zener hnh 2.55, c thng s in p nh thng l 320V, th trng thi bnh
thng, diode zener s khng dn in, v thit b in t s nhn mc in p ng dy cn
thit. Nu qu in p ngun cung cp xut hin trn ng dy in vt qu 320,7V nh, th
hai diode zener s dn in ghim mc in p vo mc 320,7V.
Mc in p gn cao s to ra dng ln chy qua hai diode zener, tc l gy ra s tiu tn cng
sut ln. iu may mn l xung gn thng nh hn mt milligiy. Cc hng sn xut cu kin
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 2: TIP GIP PN & DIODE BN DN
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bn dn ch to cc nhm diode zener chuyn dng x l s tiu tn cng sut ln trong
mt khong thi gian ngn. Cc dng c c gi l cc b trit in p qu [TVS -
transient voltage suppressor]. V d, cc TVS ca hng Motorola c th tiu tn cng sut l
1500W trong 1ms. Cc b trit in p qu cn c dng mt diode zener. Mc in p nh
thng ca TVS loi thp l 6V v loi cao l 350V. K hiu mch ca TVS mt chiu v hai
chiu nh hnh 2.55b.
Mt loi cu kin in t khc l in tr thay i bng oxide kim loi [metal - oxide varistor
MOV], gi l varistor c chc nng tng t nh TVS bng zener. S khc nhau ch varistor
c ch to bng cc ht oxide km khc so vi bng cc vt liu bn dn thng thng. Cu
trc ca varistor cho php tiu tn cng sut ln hn nn cc varistor c th x l cc mc in
p v dng ln hn. C cc varistor vi in p nh thng t 8V n 1000V. Nhc im ca
cc varistor l c in dung ln; nn varistor t c s dng trn cc ng dy thng tin. K
hiu ca varistor nh hnh 2.55c.








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CHNG 3. TRANSISTOR HIU NG TRNG

Transistor hiu ng trng gi tt l FETs [Fiel-Effect Transistors] bao gm hai loi chnh
l: Transistor hiu ng trng c cu trc cng bng bn dn-oxide-kim loai, gi tt l MOSFET
[Metal-Oxide-Semiconductor FET], v transistor hiu ng trng c cu trc cng bng tip
gip pn, thng gi l JFET [Junction FET]. Transistor MOSFET tr thnh mt trong nhng
dng c bn dn quan trng nht trong vic thit k ch to cc mch tch hp (ICs) do tnh n
nh nhit v nhiu c tnh thng dng tuyt vi khc ca n. C MOSFET v JFET u dn
in theo cc knh dn, nn mi loi u c dng knh dn bng bn dn n hoc p, gi l
MOSFET knh n (gi tt l NMOS), MOSFET knh p (gi tt l PMOS) v JFET knh n v
JFET knh p tng ng. Ngoi ra, i vi MOSFET da theo nguyn tc hnh thnh knh dn
m c MOSFET cm ng knh hay tng cng knh; giu knh (knh khng c sn) v
MOSFET ngho knh (knh c sn).
3.1 CU TRC C BN CA MOSFET .
Cu to c bn v k hiu mch ca MOSFET knh n c cho hnh 3.1.
Phn chnh ca mt MOSFET c cu trc nh hai bn cc ca mt t in: mt bn kim loi
pha trn c ni vi chn ra gi l chn Cng [Gate] G, bn cc pha di l phin lm
bng vt liu bn dn Si tp dng p, i khi
c ni vi cc ngun bn trong MOS
(MOS ba chn), nhng phn ln, cc
c ly ra bng mt chn th t c tn l
chn [Bode] B, (c khi cn gi l cc SS
[Substrate]) c th cho php iu khin
bi mc in th ca n t bn ngoi.
Lp in mi ca t chnh l lp cch in
rt mng di xit Silicon (SiO
2
), do cu trc
nh vy nn Cng - c gi l cu trc
ca t MOS [Metal-Oxide-Semiconductor].
Cc chn Ngun [Source] S v Mng [Drain] D, l cc chn c ni vi cc vng bn dn tp
dng n
+
t bn trong phin , gi l vng Ngun v vng Mng tng ng. i vi mt dng
c bn dn knh n, th dng in c hnh thnh bng cc in t v vng Ngun v Mng
c cu to bi cc vng pha tp m n
+

(vo khong 10
20
cm
-3
) c th tip xc tt
vi knh dn. Ngi ta dng phng php
cy ion to ra vng Ngun v Mng sau
khi cu trc Cng c xc lp sao cho
hai vng ny thng hng vi vng Cng, v
s hnh thnh knh dn c lin tc cn
phi c s chng ln gia vng Cng vi
vng Ngun v Cng vi Mng hai u
knh dn. Do cu to ca dng c c tnh i
xng nn Ngun v Mng c th thay th ln
nhau. Vng bn dn gia hai vng Ngun v
Mng ngay pha di Cng c gi l vng
knh. Khong cch gia hai tip gip pn
(vng Ngun- v vng Mng-) l chiu
di hiu dng ca knh L. v W l chiu rng
ca knh. Vng l mt bn dn tp kiu
ngc li vi hai vng Ngun v Mng
(thng mc pha tp long hn) m
bo cch ly gia hai vng. Lp xit (SiO
2
)
c to ra bng cch gia nhit nhit
cao c cc c tnh b mt chung tt nht.
Vt liu lm Cng thng dng nht l kim
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loi hoc polysilicon. Khi chiu di knh dn bng 0,3m, th cc thng s in hnh l: chiu
dy ca lp xit 10m, mc pha tp ca vng l 3x10
17
cm
-3
, dy tip gip pn gia
Mng- v Ngun- l 0,2m. i vi mi loi knh dn, th mc ngng ca in p
cng phi thch hp c th lm bin i knh dn. Nu knh dn bin mt ti in p cng
bng 0 (tc l knh dn thng h - normally OFF) th MOSFET c gi l dng c tng
cng knh do in p cng cn phi c cho s tng cng [enhance] hay lm giu knh dn,
(hnh 3.1a, b, c). Nu knh l c sn ti in p cng bng 0 (tc thng kn - ON), th
MOSFET c gi l dng c ngho knh v in p cng cn cho vic lm suy kit [deplete]
hay lm ngho knh dn, (hnh 3.1d).
Cc in p v dng in ca MOSFET knh n cng c xc nh r trn hnh 3.1b. Dng
Mng i
D
, dng Ngun i
S
, dng Cng i
G
, v dng i
B
c xc nh vi chiu dng ca dng
c ch r cho mt transistor MOSFET knh n. Cc in p gia cc cc quan trng l in p
Cng-Ngun: v
GS
= v
G
- v
S
, in p Mng-Ngun: v
DS
= v
D
- v
S
, v in p Ngun-: v
SB
=
v
S
- v
B
. Tt c cc in p ny u c gi tr 0 trong ch hot ng thng thng ca N
MOSFET.
Ch rng: cc vng Ngun v Mng to thnh tip
gip pn vi vng . Hai tip gip ny lun lun
c gi iu kin phn cc ngc c s cch ly
gia cc tip gip ca transistor MOS. V vy, in p
phi nh hn hoc bng vi in p cc cc
Ngun v Mng m bo cho cc tip gip pn
c phn cc ngc mt cch thch hp, tc: i
B
0.
Ngoi ra, Cng phi l mt bn cc kim loi c
tip xc mt nhng vn c cch in vi vng
knh qua lp SiO
2
, hay ni cch khc l khng c kt
ni in trc tip gia cc Cng v knh dn
MOSFET, nn MOSFET l mt dng c c tr khng
vo rt cao, bi v dng Cng rt nh, i
G
0 cu
hnh phn cc dc. V l do ny m i khi MOSFET
cn c tn gi l FET c cng cch ly hay IGFET
[Insulated-Gate FET].
3.2 NGUYN L LM VIC V C TUYN
CA NMOS KIU TNG CNG.
a) Cc c tnh ca t MOS.
Nh ni cu to, trung tm ca MOSFET thc
cht l c cu trc ca t MOS, c v hnh 3.2a,
trong in cc pha trn ca t c hnh thnh
bi mt bn kim loi, chng hn nh nhm hoc mt
cht c cu trc a tinh th c pha tp m c (a
tinh th Si), in cc ny xem nh cc Cng (G). Mt
lp cch in mng thng bng di-xit Si s cch ly
cng bng kim loi vi l mt vng bn dn m
tnh nng ca n nh mt in cc th hai ca t
MOS. Dixit Si l mt cht cch in cht lng cao,
rt n nh v d dng c to thnh bi s -xy ha
bng nhit thanh Silicon. Kh nng to thnh
mt cht cch in cht lng cao l mt trong nhng
l do c bn m Silicon tr thnh vt liu bn dn ch
yu trong cng ngh ch to dng c bn dn hin
nay. Vng bn dn lm c th l n hay p nh
hnh 3.2a.
Nguyn l lm vic ca t MOS l bn cht nguyn
tc hot ng ca MOSFET. Lp bn dn to thnh
in cc pha di ca t c in tr sut ln do s
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lng cc l trng v in t trong vng c hn ch (pha tp long), in dung ca t c
cu trc nh trn l mt hm phi tuyn ca in p v
G
. Hnh 3.2(b, c, d) m t cc trng thi tc
thi vng bn dn lm , pha di in cc Cng theo ba gi tr in p phn cc khc nhau.
- Vng Tch ly.
Trng thi ca t MOS khi t in p phn cc m ln ln cc Cng so vi cc c cho
hnh 3.2b. Lng in tch m ln trn bn kim loi s cn bng bi cc l trng c thu ht
n b mt phng chung gia lp bn dn v lp di xit Si, trc tip ngay pha di bn cc
Cng.
i vi trng thi phn cc ny, mt l trng ti b mt vt tri hn so vi mt l trng
hin c trong bn dn p ban u v ta c th xem rng b mt nh vng tch ly l trng.
Lp tch ly cc k mng, tn ti ch yu nh mt di in tch trc tip ngay pha di cc
Cng.
- Vng Ngho.
Khi tng dn in p t trn Cng. Ban u, cc l trng s b y ra khi b mt ca bn
dn p gn st vi lp xit Si, lm cho mt l trng gn b mt gim dn thp hn mc cc
ht ti a s c thit lp bi mc pha tp ca thanh nh m t hnh 3.2c. Trng thi ny
c gi l s lm ngho v ch lm vic ny ca t MOS c gi l ch ngho. Vng
ngay pha di bn cc Cng bng kim loi b suy kit cc ht ti in t do theo cch thc nh
vy c gi l vng ngho, vng ny c trng thi gn nh lp tip xc ca diode tip gip pn.
hnh 3.2c, in tch dng trn cc Cng s c cn bng bi in tch m ca cc nguyn t
acceptor b ion ha trong vng ngho. rng ca vng ngho c th thay i t mt vi
phn mi micron n vi trm micron ty thuc vo in p phn cc t vo v mc pha tp
vng bn dn dng lm ca MOSFET.
- Vng o.
Khi tng in p trn bn cc pha trn ca t hn na, cc in t s c thu ht n b mt
chung ca lp bn dn v lp di-xit Silicon. Ti mt gi tr in p no , mt in t
ti b mt s vt tri hn mt l trng. in p ny, b mt c o cc tnh t bn
dn tp dng p ca bn dn ban u thnh mt lp o bn dn tp dng n, hay gi l vng
o, trc tip ngay pha di bn cc G ca t. Vng o ny l mt lp rt mng, tn ti ch
yu nh mt di in tch trc tip ngay pha
di vng Cng. Mt cao ca cc in t
lp o l c cung cp bi cc qu trnh pht
sinh cp in t-l trng trong phm vi lp
ngho.
in tch dng bn cc Cng s c cn
bng vi tng in tch m trong lp o cng
vi in tch m ca cc ion acceptor trong vng
ngho. Gi tr in p m ti hnh thnh b
mt lp o ng mt vai tr cc k quan trng
trong cc transistor hiu ng trng v in p
ny c gi l in p Ngng V
TN
.
b) S hnh thnh knh dn transistor NMOS
kiu tng cng knh.
Trc khi xy dng biu thc cho quan h dng-
p ca transistor NMOS, ta hy kho st mt
NMOS c cho hnh 3.3. Theo hnh v, cc
Ngun, cc Mng v cc ca NMOSFET u
c ni t chung. i vi mt in p Cng-
Ngun, v
GS
= V
GS
thp hn nhiu so vi in p
Ngng V
TN
, nh hnh 3.3a, th s c cc tip
gip pn i nghch nhau tn ti gia Ngun v
Mng, nn ch c mt dng in r rt nh c th
chy gia hai in cc . Khi tng V
GS
ln gn
bng nhng vn thp hn in p Ngng, th
mt vng ngho s hnh thnh ngay pha di
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vng Cng, v vng Ngho ny s kt hp vi cc vng ngho ca Ngun v Mng nh ch
hnh 3.3b. Trong vng ngho khng c cc ht ti in t do, nn vn khng th c dng in
xut hin gia cc Ngun v Mng. Tuy nhin, cui cng khi in p Cng-Knh tng ln vt
qu gi tr in p Ngng V
TN
, nh hnh 3.3c, th cc in t chy vo t vng Ngun, Mng
v hnh thnh nn mt lp o kt ni vng n
+
Ngun vi vng n
+
Mng, tc l c mt
in tr kt ni tn ti gia cc cc Ngun v Mng. Nu t vo gia hai cc Mng v Ngun
mt in p dng th cc in t trong knh s tri trong in trng v to nn dng in qua
cc cc Mng v Ngun. Dng trong transistor NMOS lun lun chy vo cc Mng, qua
knh dn v ra cc Ngun. Cc Cng c cch ly vi knh dn, nn s khng c dng cng
dc v ta c: i
G
= 0. Cc tip gip pn gia vng mng vi vng , vng ngun vi vng (v
cng c to ra gia vng knh dn vi vng ) phi lun lun c phn cc nghch m
bo chc chn l ch c mt dng r do phn cc nghch nh c th c b qua. Nh vy, ta
c th xem rng i
B
=0. i vi mt MOSFET nh hnh 3.3a, mt knh dn c cm ng nh
in p t vo Cng c s dn in xy ra. in p Cng s tng cng dn in ca
knh dn, nn MOSFET loi ny c tn gi l loi dng c hot ng ch tng cng.
c) c tuyn i-v ca transistor NMOS vng tuyn tnh.
xc nh biu thc v quan h ca dng in chy qua cc cc ca transistor NMOS theo cc
in p t vo cc cc, ta c th xem rng dng i
G
v i
B
u bng 0 ( xt trn).
V vy, dng in vo cc Mng phi bng vi dng in chy ra cc Ngun nn ta c:
i
S
= i
D
= i
DS
(3.1)
Biu thc cho dng Mng-Ngun i
DS
c th c vit bng cch xem xt dng in tch chy
trong knh dn hnh 3.4. in tch ca in t trn mt n v di (gi l in tch ng)
ti mt im bt k trong knh dn s bng:
( )
TN ox
''
ox
'
V v WC Q = C/ cm, i vi iu kin v
ox
V
TN
(3.2)
Trong :
ox ox
"
ox
T / C = , l in dung ca lp xit trn mt n v din tch (F/ cm
2
)

ox
l in mi ca lp xt (F/ cm). [i vi dioxide Si, th
ox
= 3,9
0
, khi : in
mi ca khng kh
0
= 8,854x10
-14
F/ cm]
T
ox
l dy ca lp xit (cm).
in p v
ox
l in p t ngang qua lp xt, v n s ty thuc vo v tr trong knh dn:
v
ox
= v
GS
- v(x) (3.3)
trong v(x) l in p ti im x no
trong knh dn so vi ngun. Hy lu
rng v
ox
phi vt qu gi tr V
TN
tn
ti lp o, nh vy Q s bng 0 cho n
khi v
ox
> V
TN
.
Ti v tr u cc Ngun ca knh dn, v
ox

= v
GS
, v v
ox
s gim xung n gi tr v
ox

= v
GS
- v
DS
ti v tr u cc Mng ca
knh dn.
Dng tri ca in t ti mt im bt k
trong knh c cho bi tch ca in tch
trn mt n v di nhn vi vn tc v
x

:
i(x) = Q(x) v
x
(x) (3.4)
in tch ng Q c cho bi biu
thc (3.2), v vn tc tri v
x
ca in t
trong knh dn c xc nh theo linh
ng ca in t v in trng t ngang qua knh dn:
( ) [ ][ ]
x n TN ox
"
ox x
E V v WC v ' Q ) x ( i = =
(3.5)

Thay th cc gi tr ca in trng ngang (theo phng x) v v
ox
vo (3.5) ta c:
( )
dx
) x ( dv
V ) x ( v v W C ) x ( i
TN GS
"
ox n
= (3.6)
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hoc ( ) ) x ( dv V ) x ( v v W C dx ) x ( i
TN GS
"
ox n
= (3.7)
in p t trn cc cc ca NMOS l v(0) = 0 v v(L) = v
DS
, nn ta c th tnh tch phn (3.7)
theo chiu di ca knh t 0 n L:
( )

=
L
0
DS
v
0
TN GS
"
ox n
) x ( dv V ) x ( v v W C dx ) x ( i (3.8)
Bi v khng c s suy hao v dng in khi chy qua knh dn, nn dng in trong knh dn
phi bng cng mt gi tr i
DS
ti mi im x trong knh, ngha l i(x) = - i
DS
, v (3.8) s c
suy ra nh sau:
DS
DS
TN GS
"
ox n DS
v
2
v
V v W C L i

= (3.9)
hoc:
DS
DS
TN GS
"
ox n DS
v
2
v
V v
L
W
C i

= (3.10)
Gi tr
"
ox n
C c gi c nh do nh sn xut quyt nh. tin cho cc mc ch thit k v
phn tch mch, biu thc (3.10) thng c vit dng nh sau:
DS
DS
TN GS
'
n DS
v
2
v
V v
L
W
K i

= vi:
'
ox n
'
n
C K =
hoc
DS
DS
TN GS n DS
v
2
v
V v K i

= trong :
L
W
K K
'
n n
= (3.11)
Cc thng s
n
K v
'
n
K c gi l cc thng s h dn, v c hai u c n v l A/V
2
.
Biu thc (3.11) l biu thc kinh in ca dng Mng-Ngun cho transistor NMOS hot ng
vng tuyn tnh, m trong mt knh dn in tr s kt ni trc tip vng Ngun v vng
Mng. S kt ni bng in tr s c sau khi in p t ngang qua lp xt vt qu gi tr in
p Ngng ti mi im trong knh dn, ngha l:
v
GS
- v(x) V
TN
vi iu kin: 0 x L (3.12)
in p trong knh dn s ln nht ti pha u vng Mng, khi v(L) = v
DS
. V vy, cc biu
thc (3.10) v (3.11) ch hp l khi c iu kin:
v
GS
- V
TN
v
DS
(3.13)
Tm li, i vi NMOS lm vic vng tuyn tnh, ta c:
DS
DS
TN GS
'
n DS
v
2
v
V v
L
W
K i

= ,
vi iu kin: v
GS
- V
TN
v
DS
0 v
'
ox n
'
n
C K = (3.14)
R rng hn l ta c th nhn c biu thc bng cch nhm cc s hng (3.10):

=
L
v

2
v
V v WC i
DS DS
TN GS
"
ox DS n

(3.15)
Khi in p Mng-Ngun c gi tr nh, th s
hng th nht s biu din i lng in tch
trung bnh trn mt n v di trong knh
dn, bi v in p knh dn trung bnh v(x) =
v
DS
/ 2. S hng th hai s tng trng cho vn
tc tri trong knh dn, m khi in trng
trung bnh s bng vi in p v
DS
t ngang
qua knh dn chia cho di knh L
c tuyn i-v vng tuyn tnh c to ra t
biu thc (3.14) cho hnh 3.5 i vi trng
hp V
TN
= 1V v K
n
= 250 A/V
2
.
Cc c tuyn hnh 3.5 l mt phn c
tuyn ra ca transistor NMOS. c tuyn ra
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ca mt dng c bn dn 3 cc l th ca dng in chy qua li ra ca linh kin m trong
trng hp ny l dng Mng nh l mt hm s ca in p t ngang qua li ra m y l
in p Mng-Ngun.
H cc c tuyn s c to ra, vi mi
ng c tuyn tng ng vi mt gi tr
khc nhau ca in p Cng -Ngun tc l
in p cng li vo.
Cc c tuyn hnh 3.5, th hin mt h cc
ng thng c dng gn ging nhau, v l do
nn vng lm vic c tn gi l vng
tuyn tnh, tuy nhin cth c c tuyn hi
cong, c th l ng c tuyn ng vi V
GS

= 2V.
i vi in p Mng-Ngun rt b, chng
hn: v
DS
v
GS
- V
TN
, th biu thc (3.14) c
th rt gn thnh:
( )
DS TN GS
"
ox n DS
v V v
L
W
C i = (3.16)
Dng i
DS
chy qua cc cc ca MOSFET lc
ny t l thun thun vi in p v
DS
t trn
MOSFET. FET lm vic rt ging vi mt
in tr ni gia cc cc Ngun v Mng,
nhng gi tr ca in tr c iu khin bi
in p Cng -Ngun.
in tr ca FET lm vic vng tuyn tnh,
gn gc ta , c gi l in tr m [on-
resistance] R
ON
, c th c xc nh xut
pht t biu thc (3.14), ta c:

( )
TN GS
'
n
1
Q im tai
0
DS
v
DS
DS
ON
V V
L
W
K
1
v
i
R

(3.17)
rng R
ON
cng bng vi t s v
DS
/ i
DS
biu thc (3.16).
Ti nhng im gn st vi gc ta , cc c tuyn i-v ca MOSFET thc cht l cc ng
thng, tc l c tuyn phi c xt vi iu kin v
DS
v
GS
- V
TN
, tuy nhin theo hnh 3.5 th
hnh nh tuyn tnh bt u b vi phm i vi c tuyn thp nht, khi V
GS
- V
TN
= 2-1 =
1V (gn bng vi cc gi tr ca V
DS
), nn lc ny ta phi hiu rng vng tuyn tnh ch ng vi
cc gi tr ca v
DS
thp hn 0,1 n 0,2V. i vi nhng c tuyn ng vi V
GS
ln, th c
tuyn V-A th hin tuyn tnh rt cao trong sut cc gi tr ca V
DS
hnh 3.5, chng hn,
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ng c tuyn ng vi V
GS
= 5V.
d) S bo ha c tuyn i-v ca MOSFET.
Nh xt trn, biu thc (3.14) ch c ngha vi iu kin c mt knh dn kt ni trc tip
gia vng Ngun v vng Mng. Ta xt hin tng xy ra trong MOSFET khi tng in p
Mng-Ngun ln trn gi tr gii hn biu thc (3.14) nh m t hnh 3.6. Vi ba gi tr in
p Mng-Ngun khc nhau v gi c nh in p Cng-Ngun. hnh 3.6a, MOSFET lm
vic vng tuyn tnh, vi v
DS
< v
GS
- V
TN
nh c xt trn. Khi tng gi tr v
DS
ln thnh
v
DS
= v
GS
- V
TN
, hnh 3.6b th knh dn bt u bin mt ti u mt ca knh pha vng mng.
Hnh 3.6c m t trng thi knh dn theo gi tr v
DS
ln hn. Vng knh dn b bin mt, hay
ni cch khc l b tht knh [pinched off] bt u ti pha vng mng ca knh dn, lm cho
vng knh in tr ngn li. Ch : Nu nhn thong qua th c th d nhm ln cho rng, dng
qua MOSFET s bng 0, tuy nhin trong trng hp ny dng qua MOSFET l 0. Nh m t
hnh 3.7, in p ti im tht knh trong knh dn s lun lun bng:
v
GS
- v(x
po
) = V
TN
hay: v(x
po
) = v
GS
- V
TN
(3.18)
in p ny cng vn l in p t ngang qua phn o ca knh, lm cho cc in t s vn
tri trong knh dn t tri qua phi. Khi cc in t di chuyn ti im tht, chng s c
phng thch vo vng ngho gia u cui ca knh v vng mng, lc ny in trng trong
vng ngho s cun cc in t vo vng mng. Ngay khi knh dn c tht, st p qua vng
knh o l khng i. V vy, dng mng s tr thnh hng s, v MOSFET chuyn vo lm
vic vng bo ha. Vng ny cng thng c gi l vng tht knh. c lc biu thc
(3.14) vi v
DS
= v
GS
- V
TN
, rt ra dng mng-ngun ca NMOS lm vic vng bo ha:
( )
2
TN GS
'
n
DS
V v
L
W
2
K
i = i vi: v
DS
v
GS
- V
TN
0 (3.19)
y l biu thc dng mng ca transistor NMOS lm vic vng bo ha. Dng mng ph
thuc vo bnh phng ca s hng (v
GS
- V
TN
), nhng li c lp vi in p mng-ngun. Tr
s ca v
DS
transistor lm vic vng bo ha c gi bng tn ring l v
DSAT
xc nh bi
biu thc:
v
DSAT
= v
GS
- V
TN
(3.20)
V
DSAT
cng c xem nh in p bo ha, hay in p tht.
Biu thc (3.19), c th c th hin tng t nh biu thc (3.15):

( )


=
L
V v

2
V v
WC i
TN GS TN GS "
ox DS n
(3.21)
Vng knh b bin i (o) c in p v
GS
- V
TN
t ngang qua n, nh hnh 3.7. V vy, s
hng th nht ca (3.21) tng ng vi gi tr in tch trung bnh trong lp o, v s hng th
hai l gi tr vn tc ca cc in t tri trong in trng bng (v
GS
- V
TN
)/ L.
Hnh 3.8a, l ton b h c tuyn ra ca mt transistor NMOS c V
TN
= 1V v K
n
= 25 A/V
2
,
m trong v tr cc im tht knh c xc nh bi v
DS
= V
DSAT
. Pha bn tri ca cc v tr
VTN =1V, v Kn = 25x10
-6
A/ V
2

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im tht knh l trng thi ca transistor lm vic vng tuyn tnh, v pha phi ca cc im
tht l vng bo ha. Khi v
GS
V
TN
= 1V, transistor s ngng dn v dng mng bng 0. Khi
tng in p Cng vng bo ha, th khong cch gia cc c tuyn dng mng s gin ra do
bn cht lut bnh phng ca biu thc (3.19).
Hnh 3.8b, l mt c tuyn ra c th i vi in p Cng-Ngun, V
GS
= 3V, c tuyn ny biu
din cc biu thc quan h dng-p ca NMOS vng tuyn tnh v vng bo ha. Biu thc
vng tuyn tnh (3.14) c miu t bi ng parabola hnh 3.8b, v khi iu kin: V
DS
> V
GS

- V
TN
= 2V, th c tuyn l ng thng nm
ngang, tc NMOS bt u chuyn vo vng c
dng i
DS
bo ha theo phng trnh (3.19). im
tht knh l im giao nhau gia hai ng biu
din ca hai phng trnh (3.14) v (3.19).
e) Tng hp nguyn l lm vic v cc phng
trnh c bn ca NMOS kiu tng cng.
Nh xt trn, do khng tn ti knh dn gia
hai vng mng v ngun khi t nht in p V
GS
=
0V, nn vi mt in p V
DS
dng no v
cc B c ni trc tip vi cc ngun, th
thc t l s c hai tip gip pn phn cc ngc
gia hai vng pha tp n v s khng c dng
chy gia hai vng mng v ngun.
Khi c hai in p V
DS
v V
GS
c thit lp ti in p dng no (ln hn 0V), tc l thit
lp in p dng ti mng v cng so vi ngun. in p dng ti cng s y cc l trng
(do cc in tch cng du y nhau) vo su trong p sut theo din tch ph ca lp SiO
2
, to
ra mt vng ngho khng c cc l trng gn lp cch ly bng SiO
2
. Tuy nhin, cc in t
trong p (cc ht ti in thiu s ca vt liu bn dn tp p) s c thu ht n bn cc cng
dng v tch ly li thnh vng gn st vi b mt ca lp xt. Lp SiO
2
vi phm cht cch
in rt tt ca n s ngn cn cc ht ti mang in tch m hp th cc cng. Nn khi tng
V
GS
th s tch ly cc in t gn st b mt ca lp SiO
2
s tng ln, to ra mt vng knh n
c th truyn dn mt dng in ng k gia Mng v Ngun.
ng vi tr s V
GS
m knh dn bt u c hnh thnh dn n s tng nhiu dng mng
c gi l in p ngng V
TN
, (hay cn gi l V
GS (Th)
trong cc s tay tra cu cc dng c bn
dn).
Do knh dn khng tn ti v c tng cng bng vic p dng mt in p Cng-Ngun
c gi tr dng, nn MOSFET c gi l MOSFET kiu tng cng.
Khi V
GS
tng ln vt qua mc ngng th mt cc ht ti in t do trong knh dn c to
thnh s tng ln, dn n mc dng mng qua knh cng tng ln, nhng nu gi V
GS
khng
i v tng V
DS
th dng mng s tng ln n mc bo ha, tc l lc ny dng mng I
DS
khng
tng do qu trnh tht knh, knh dn bt u hp nht ti pha u vng mng ca knh dn to
thnh (xem hnh 3.6b). p dng nh lut Kirchhoffs theo p i vi cc in p u cc ca
MOSFET ta c:
V
DG
= V
DS
- V
GS
(3.22)
Nu V
GS
c gi c nh ti mt tr s no , chng hn 8V v tng V
DS
t 2 n 5V, th in
p V
DG
[theo biu thc (3.22)] s gim xung t -6V xung -3V, v in p cng s tr nn
dng thp hn so vi mng. S gim xung in p cng-mng s dn n lm gim lc hp
dn cc ht ti in t do (cc in t) ngay ti vng knh dn to thnh pha u cc mng,
gy nn s gim xung v rng hiu dng ca knh. Cui cng knh dn s gim xung n
im tht knh v trng thi bo ha s c thit lp. Ni cch khc khi tng hn na V
DS
ti
gi tr khng i ca V
GS
s khng nh hng n mc bo ha ca I
DS
cho n khi iu kin
nh thng xy ra.
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C th ly v d nh h c tuyn mng c th cho MOSFET knh n nh hnh 3.8a trn, vi
V
GS
= 5V, trng thi bo ha xy ra ti mc V
DS
= 4V. Trong thc t mc bo ha i vi V
DS

lin quan vi mc in p V
GS
t vo bng biu thc (3.20): V
DSAT
= V
GS
- V
TN

Nh vy, r rng l i vi mt gi tr khng i ca V
TN
, khi mc V
GS
cao hn th s c mc
bo ha ca V
DS
cao hn. Khi gi tr ca V
GS
= V
TN
= 1V, th dng mng s gim xung 0 mA.
V vy, thng thng i vi cc gi tr ca V
GS
thp hn so vi mc in p ngng, th dng
mng mt MOSFET kiu tng cng s bng 0 mA, tc l MOSFET trng thi chc chn
ngt. Khi mc V
GS
tng ln t gi tr V
TN
n gi tr 5V, th s dn n mc bo ha ca dng I
DS

cng tng ln t mc 0 A ln mc 200 A.
Mt c tuyn i-v khc, dng phn tch dc ca MOSFET kiu tng cng c gi l c
tuyn truyn t [transfer characteristic] biu din quan h gia dng mng theo in p cng-
ngun, khi c nh in p mng-ngun. c tuyn truyn t c th c xc nh n gin
theo phng php th nh hnh 3.9, trong c tuyn truyn t c suy ra t c tuyn
dng mng, m t qu trnh chuyn tip t mc dng-p ny n mc dng-p khc. Dng
mng bng 0mA i vi V
GS
V
TN
v s tng ln khi V
GS
> V
TN
nh c xc nh bi phng
trnh (3.19). Lu rng, khi xc nh cc im trn c tuyn truyn t t c tuyn dng
mng, ch c v theo cc mc dng bo ha.
Nh vy, ton b cc quan h dng-p ca transistor NMOS c th tm tt nh sau:
i vi tt c cc vng ta u c:

L
W
C K
"
ox n n
= 0 i
G
= 0 i
B
= (3.23)
Vng ngt: 0 i
DS
= i vi: v
GS
V
TN
(3.24)
Vng tuyn tnh:

DS
DS
TN GS n DS
v
2
v
V v K i

= i vi: v
GS
- V
TN
v
DS
0 (3.25)
Vng bo ha:
( )
2
TN GS
n
DS
V v
2
K
i = i vi: v
DS
v
GS
- V
TN
0 (3.26)
f) Transistor PMOS kiu tng cng.
Cc transistor MOSFET knh p (transistor PMOS) kiu tng cng c cu to nh hnh 3.10,
mt cch chnh xc l PMOS c cu to bng cc vng bn dn tp ngc vi transistor NMOS,
nhng nguyn l hot ng ca PMOS v c bn ging nh NMOS, ngoi tr cc cc tnh in
p v chiu dng in trn cc cc ca PMOS l ngc li. Cn phi t in p m trn cc
cng so vi cc ngun (v
GS
< 0 hay v
SG
> 0) thu ht cc l trng nhm to ra mt lp o
bng bn dn p trong vng knh. Trc ht, c s dn in transistor PMOS kiu tng
cng th in p cng-ngun cn phi m nhiu so vi in p ngng ca PMOS, c k
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hiu l V
TP
.
gi cho cc tip gip ngun- v mng- c phn cc ngc th v
SB
v v
DB
cng phi
thp hn 0. Yu cu ny c tha mn bng cch t in p v
SD
0 (v
DS
0).
Cc c tuyn ra v c tuyn truyn t ca PMOS kiu tng cng cho hnh 3.11.
Khi in p v
GS
V
TP
= -2V (tc l: v
DS
- V
TP
= +2V), th transistor ngt. Dng mng s tng
theo cc gi tr dng ca v
GS

Cc biu thc dng mng ca transistor PMOS cng tng t nh NMOS, tr chiu dng
mng l ngc li v cc gi tr ca v
SG
, v
SD
v v
BS
by gi l dng.
Cc biu thc quan h dng-p ca transistor PMOS c tm lc nh sau:
i vi tt c cc vng ta u c:

L
W
C K
"
ox p p
= 0 i
G
= 0 i
B
= (3.27)
Vng ngt: 0 i
SD
= i vi: v
SG
- V
TP
(v
GS
V
TP
) (3.28)
Vng tuyn tnh:

SD
SD
TP SG p SD
v
2
v
V v K i

+ = i vi: v
SG
+ V
TP
v
SD
0 (3.29)
Vng bo ha:
( )
2
TP SG
p
SD
V v
2
K
i + = i vi: v
SD
v
SG
+ V
TP
0 (3.30)
Trong cc biu thc trn c s khc nhau thng s quan trng gia hai loi NMOS v PMOS
l K
p
v K
n
. cc dng c PMOS, cc ht ti in trong knh dn l cc l trng, v dng in
l t l thun vi linh ng ca l trng
p
. linh ng in hnh ca l trng ch bng 40%
linh ng ca in t, v vy i vi cc iu kin in p cho, th dng c PMOS s ch
dn in bng 40% dng in ca dng c NMOS.
g) in dung trong cc transistor MOSFET.
Trong tt c cc dng c bn dn u c in dung ni, cc in dung ny s hn ch dng c
lm vic tn s cao. Trong cc ng dng mch s, cc in dung ny lm cho tc chuyn
mch ca mch gim nhiu, cc in dung cng s hn ch v mt tn s m mch khuych i
ng l c th nhn c.

Cc in dung ca transistor NMOS
hot ng ch tuyn tnh.
Hnh (a) ch r cc in dung khc nhau
lin quan vi MOSFET lm vic ch
tuyn tnh, m trong c mt knh
dn kt ni hai vng ngun v mng. Gi
tr ca in dung cng-knh dn l:
WL C C
"
ox GC
= (3.31)
ch tuyn tnh, C
GC
c phn chia
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thnh hai phn nh nhau: in dung cng-ngun C
GS
v in dung cng-mng C
GD
, mi in
dung bao gm mt na gi tr in dung cng-knh cng vi gi tr in dung chng ln gia
vng cng-ngun hay vng cng-mng.
in dung chng ln [overlap capacitance]
'
OL
C thng c quy nh nh in dung ca lp
xt trn mt n v rng knh dn. Cc gi tr in dung khng tuyn tnh ca tip gip pn
c rt ra bi cc in dung ngun- v mng-, C
SB
v C
DB
ty vo ch lm vic ca
transistor NMOSFET.
Cc in dung ca transistor NMOS hot ng ch bo ha.
Khi MOSFET lm vic ch bo ha,
hnh (b), mt phn knh dn s bin mt
khi in p mng-ngun vt qua im
tht knh. Lc ny, gi tr ca cc in
dung cng-knh v mng-knh s l:
( ) WL C W C C
"
OX
3
2 '
OL GS
+ =
v W C C
'
OL GD
= (3.32)
Cc in dung ca transistor NMOS
hot ng ch ngt.
ch ngt, vng cng-knh dn l
khng tn ti. Cc gi tr ca C
GS
v C
DS

ch bao gm in dung chng ln.
W C C
'
OL GS
=
v W C C
'
OL GD
= (3.33)
Ngoi ra, cn c mt in dung nh C
GB

xut hin gia cc cng v cc nh
hnh (c).
T cc biu thc trn, r rng l cc in
dung ca MOSFET ph thuc vo ch
lm vic ca transistor v l mt hm phi
tuyn theo in p t vo cc cc ca MOSFET. Cc in dung ny s c xem xt trong cc
mch s v tng t.

h) Cc thng s ca mt NMOS kiu tng cng.
Hnh 3.12 l trang cc thng s k thut ca mt MOSFET kiu tng cng knh n, mang s
hiu 2N 4531 ca hng Motorola (M); dng v v nhn bit cc chn, c cho hnh nh bn
cnh cc thng s lm vic cc i, dng mng ln nht l 30 mA dc. Mc dng I
DSS
trng thi
ngt [off] l 10nA ( iu kin o l V
DS
= 10V v V
GS
= 0V) c th so snh vi di
miliampere i vi MOSFET kiu ngho v JFET (xt sau).
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in p ngng c cho bi k hiu V
GS(Th)
v thng c gi tr trong khong t 1V n 5V,
ty thuc vo tng MOSFET c th. Vi mc dng in hnh I
D(on)
(trong trng hp ny l
3mA, mc dng dn bo ha) c quy nh ti mt mc c th ca V
GS(Th)
( y l 10V),
nn ta c th xc nh c thng s K
n
theo (3.26). Ni cch khc, khi V
GS
= 10V, I
D
= 3mA,
th vi cc gi tr cho ca V
GS(Th)
, I
D(on)
, v V
GS(on)

s cho php xc nh K
n
t biu thc (3.26) v s
tnh c cc gi tr cc im tng ng trn c
tuyn truyn t.
V d 3.1: S dng cc d liu cho trang s liu
k thut hnh 3.12 v in p ngng trung bnh
V
GS(on)
= 3V, hy xc nh:
(a) Gi tr h dn K
n
ca MOSFET ?. (b)
c tuyn truyn t ca MOSFET ?.
Gii: (a) T phng trnh (3.26), ta c:
( ) ( )
2
3
2 2
) Th ( GT ) on ( GS
) on ( D
n
1 , 0 V / A
49
10 x 6
V 3 V 10
mA 3 x 2
V V
I 2
K

= =

=

(b) Thay cc gi tr c xc nh vo phng trnh (3.26),ta c:

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( ) ( )
2
GS
3 2
TN GS
n
D
V 3 V 10 x 061 , 0 V V
2
K
i = =

Vi V
GS
= 5V, th: I
D
= 0,244 mA. Vi V
GS
= 8;
10; 12; v 14V, I
D
s l 1,525; 3 ( c xc nh trang s liu); 4,94; v 7,38mA tng ng.
c tuyn truyn t c v nh hnh 3.13.
3.3 MOSFET KIU NGHO.
a) MOSFET kiu ngho knh- n.
Nh xt phn u ca chng, ngoi MOSFET kiu tng cng cn c MOSFET kiu
ngho [Depletion-type MOSFET hay c th gi tt l DE MOS].
i vi cu to ca NMOS kiu ngho hay knh c sn ( c tho lun phn 3.1), khi in
p cng-ngun bng 0V (bng cch ni tt cc ngun vi cc cng) v t trn hai cc mng v
ngun mt in p V
DS
> 0V, th in p dng ti cc mng s thu ht cc in t t do trong
knh dn n, tc l c dng in chy qua knh dn. Trong thc t, dng to thnh khi V
GS
= 0V
thng c gi l I
DSS
nh m t c tuyn hnh 3.14. Khi thit lp trn cc cng mt in p
m, chng hn V 1 V
GS
= , th in th m ti cng s c khuynh hng y cc in t v pha
bn dn tp-p (y cc in tch cng du) v thu ht cc l trng t bn dn p (ko cc
in tch ngc du) nh hnh 3.15. Ty thuc vo gi tr ca in p phn cc m c thit
lp bi V
GS
m mc ti hp gia in t v l trng s xy ra v nh vy s lm gim s
lng cc in t t do trong knh dn n cn cho s dn in. in p phn cc m ln hn, th
t l ti hp s cao hn. Mc dng mng to thnh v vy s gim xung khi tng in p phn
cc m cho V
GS
nh c tuyn truyn t hnh 3.14. Chng hn nh khi: V
GS
= - 1V; - 2V; . . . .
; cho n mc tht l: - 6V, th mc dng mng trn c tuyn s gim dn v 0mA (ngt). i
vi cc gi tr ca V
GS
dng, th in p dng ti cng s ko thm cc in t (cc ht ti
in t do) t bn dn-p nh c dng r ngc v s pht sinh cc ht ti in mi thng qua
s va chm to thnh gia cc ht tch in khi c gia tc.

Khi in p cng-ngun tip tc tng ln theo chiu dng, th dng mng s tng ln theo tc
rt nhanh (hnh 3.14). Khong cch theo chiu dc gia hai gi tr V
GS
= 0V v V
GS
= +1V
ca c tuyn truyn t ch r mc dng tng ln nhiu khi thay i V
GS
trong khong 1V. V
s tng dng mng rt nhanh, nn khi s dng DMOS, cn phi trnh cho DMOS lm vic c
dng mng ln nht, v dng mng c th vt qu vi mt in p cng dng., v d nh i
vi DMOS cho hnh 3.14, khi t mt in p V
GS
= +4V s cho dng mng l 22,2mA, c kh
nng vt qu cc thng s lm vic ln nht (dng hoc cng sut) ca dng c. Nh vy, vic
p dng in p cng-ngun dng, tng cng mc cc ht ti in t do trong knh
dn ln nhiu so vi mc ht ti in t do ti V
GS
= 0V. V l do ny m vng tng ng vi
cc in p cng dng trn cc c tuyn dng mng v truyn t thng c xem nh vng
tng cng, cn vng tng ng gia mc dng ngt (I
DS
= 0) v mc dng bo ha (I
DS
= I
DSS
)
c coi nh vng ngho.
Quan h dng-p MOSFET kiu ngho tng t nh MOSFET kiu tng cng. Gi tr in
p V
TN
(cn c gi l in p tht [pinch-off voltage] V
P
) tng ng vi dng mng bng 0,
knh dn hon ton bin mt hay ni cch khc l knh dn b tht hon ton. Gi tr I
DSS
l mc
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dng mng bo ha ti V
GS
= 0V. Mc dng bo ha c th xc nh t biu thc dng mng
bo ha, m in p ngng V
TN
c thay bng in p tht V
P
:
( ) ( )
2
P
GS
2
P
n
2
P GS
n
DS
V
v
1 V
2
K
V v
2
K
i

= = (3.34)
hay
2
P
GS
DSS DS
V
v
1 I i

= (3.35)
Trong thng s I
DSS
c xc nh bi:

2
P
n
DSS
V
2
K
I = hoc:
2
P
DSS
n
V
I 2
K = (3.36)
Cc biu thc m t quan h dng-p u ng cho c vng tng cng v vng ngho, nhng
cn phi xc nh du thch hp cho V
GS
ca DMOS hot ng ch tng cng knh v
ngho knh.
V d 3.2: Hy v c tuyn truyn t ca mt MOSFET kiu ngho c I
DSS
= 10mA v V
P
= -
4V.
Gii: v c tuyn truyn t vi cc thng s cho trn, trc ht ta hy xc nh cc
im c bit trn c tuyn nh sau:
Ti gi tr V
GS
= 0V, ta c: I
D
= I
DSS
= 10mA.
Ti gi tr V
GS
= V
P
= - 4V, th I
D
= 0.
Vi V
GS
= V
P
/2 = -4V/2 = -2V, I
D
= I
DSS
/4 = 2,5mA
v ti gi tr I
D
= I
DSS
/2, ta c V
GS
= 0,3V
P
= - 1,2V.
Trc khi v vng ng vi V
GS
dng, ta hy nh rng I
D
tng rt nhanh theo cc gi tr dng
ca V
GS
, nn y ta s th chn V
GS
= +1V, ta c:
mA 63 , 15 mA 5625 , 1 x 10
V 4
V 1
1 mA 10
V
V
1 I I
2
2
P
GS
DSS D
= =

+
=

=

c tuyn truyn t c v nh hnh 3.16.
b) MOSFET kiu ngho knh-p.
Cu trc ca DE MOS knh-p, ni mt cch chnh xc l ngc vi cu trc ca DE MOS knh-
n nh c xt hnh 3.1d. Tc l, c thanh bn dn-n v knh dn lp sn bng vng bn
dn-p. Cc cc vn c xc nh nh i vi DE MOS knh-n, nhng tt c cc tnh ca in
p v chiu dng in l ngc li nh m t hnh 3.17a.
c tuyn dng mng c dng nh hnh 3.17c, nhng V
DS
c gi tr m hay V
SD
, I
D
c gi tr
dng nh c ch r trn c tuyn (v chiu dng in c xc nh l ngc li).
n gin cho vic v c tuyn gc phn t th nht, ta c th hiu cc gi tr ca p v dng
l: - V
DS
= V
SD
v - I
DS
= I
SD
tc cng chnh l dng I
D
nh c quy c.
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c tuyn truyn t ca DE MOS knh-p c dng nh hnh 3.17b. Dng mng s tng ln t
im ngt ti V
GS
= V
P
trong vng cc gi tr V
GS
dng n I
DSS
v sau tip tc tng khi tng
dn cc gi tr m ca V
GS
. Phng trnh dng-p xt MOSFET trn vn c th p dng
c cho DE MOS knh-p, nhng cn phi vit du chnh xc cho c V
GS
v V
P
trong cc
phng trnh. K hiu mch ca DEMOS knh-p cho hnh 3.17d.
c) Cc thng s ca transistor DE MOS:
Cc thng s ca mt DE MOS knh-n ba cc mang s hiu 2N3797 do hng Motorola (M)
sn xut cho hnh 3.18.
Qua cu trc v nguyn tc hot ng ca cc loi transistor MOSFET xt trn, th hin r
tnh i xng ca cc dng c MOS. Cc ng vai tr nh cc ngun, thc t c xc nh bi
cc in p ngoi t vo. Dng in c th chy qua knh dn theo c hai chiu, ty thuc vo
in p t vo. i vi cc transistor NMOS, vng n
+
m ti c kt ni vi mc in p
cao hn s l cc mng v vng n
+
cn li c ni vi mc in p thp hn s l cc ngun.
i vi cc transistor PMOS, vng p
+
m ti c kt ni vi mc in p thp hn s l cc
mng v vng p
+
cn li c ni vi mc in p cao hn s l cc ngun. Trong cng ngh
ch to cc dng c bn dn, tnh i xng rt hu ch trong mt s ng dng, c th l trong
cc b nh truy xut ngu nhin ng (DRAM) [Dynamic Random-Access Memory].
Bng 3.1 s tm tt cc gi tr in p ngng cho c bn loi transistor NMOS v PMOS.

BNG 3.1: c tnh ca cc transistor MOS
NMOS PMOS
Kiu tng cng V
TN
> 0 V
TP
< 0
Kiu ngho V
TN
0 V
TP
0


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3.4 TRANSISTOR HIU NG TRNG CNG TIP GIP JFET.
Transistor hiu ng trng cng tip gip, gi tt l JFET [Junction Field-Effect Transistor] l
mt kiu khc ca transistor hiu ng trng c th c to thnh m khng cn phi c lp
xt cch ly vi cc cng bng cch s dng cc tip gip pn. Phn sau ca tn gi cng nh i
vi MOSFET cho bit nguyn tc lm vic ca dng c l c iu khin bng in trng.
Phn trc ca tn gi ch cc cng ca dng c s c to thnh bi tip gip pn vi . Do
vy, JFET cng cn c gi l JUGFET.
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Cu to ct ngang v k hiu mch ca JFET knh n c cho hnh 3.19, bao gm mt knh
hp bng vt liu bn dn n, (c nng pha tp thp hn vng cng) m hai u c ni vi
hai in cc bng kim loi gi l cc ngun (S) v mng (D) nh MOSFET. Trong phm vi
vng knh dn l hai vng vt liu bn dn p
s to thnh cc cng (G) ca JFET.
Khng ging nh MOSFET, y khng c
s cch ly tch ri vng cng vi knh dn,
m thay vo l cng c kt ni in vi
knh dn thng qua hai tip gip pn.
JFET knh n, dng in chy vo knh dn
ti cc mng v ra ti cc ngun. in tr
vng knh dn s c iu khin bng s
thay i rng vt l ca knh thng qua s
iu bin ca vng ngho bao quanh cc tip
gip pn gia cng v knh dn. vng tuyn
tnh, JFET c th xem n gin nh mt in
tr c iu khin bng in p m in tr
knh dn ca n c xc nh bi:

W
L
t

R
CH
= (3.37)
Trong : - l in tr sut ca vng knh;
L - l di knh; W - l rng ca knh dn
gia cc vng ngho ca tip gip pn; t - l
dy ca knh dn.
Khi c in p t vo gia mng v ngun,
th in tr knh dn s xc nh dng in
thng qua nh lut Ohm.
Khi khng c in p phn cc t vo (nh
hnh 3.19), th s c mt vng knh dn in
tr tn ti kt ni vng mng v ngun. Vic
p dng mt in p phn cc ngc ln cc
tip gip cng-knh s lm cho vng ngho
c m rng hn, tc l lm gim rng
hiu dng ca knh dn v dng qua knh dn
s gim xung. V vy, JFET thuc v cc
dng c kiu ngho, c ngha l cn phi c
in p t vo cng chuyn JFET v ngng dn.
a) JFET khi ch c in p phn cc cng.
Hnh 3.20a, m t trng thi ca JFET vi in p bng 0V trn cc mng v ngun v
GS
= 0V.
Lc ny rng ca knh l W.
Trong sut ch lm vic thng thng, mt in p phn cc ngc cn phi c duy tr
qua cc tip gip pn m bo s cch ly gia cng v knh. Yu cu c phn cc ngc s
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l: v
GS
0V.
Hnh 3.20b, l trng thi ca JFET khi v
GS
c gim xung n mt gi tr m, lm cho
rng vng ngho tng ln, tc l lm tng in tr ca vng knh dn. rng ca knh dn
by gi gim xung, vi W

< W. Do tip gip cng-knh c phn cc ngc, dng cng s


bng dng bo ha ngc ca tip gip pn, thng l mt gi tr rt nh nn y ta c th xem
i
G
0.
i vi cc gi tr ca v
GS
m hn, th rng knh dn s tip tc gim xung, lm cho in tr
ca vng knh tip tc tng ln. Cui cng, s t n trng thi ca JFET nh hnh 3.20c, tc
l in p cng-knh t n gi tr in p tht [pinch-off voltage] v
GS
= V
P
. in p tht V
P
l
gi tr (m) ca in p cng-ngun tng ng ti thi im vng knh dn bin mt hon ton.
Knh dn s tr nn tht li khi hai vng ngho ca hai tip gip pn kt hp vi nhau ti trung
tm ca knh dn. Lc ny, in tr ca vng knh s tr nn v cng ln. Nu tng v
GS
m hn
na, v thc cht khng nh hng n bn cht bn trong ca JFET hnh 3.20c, nhng v
GS

phi khng c vt qu in p nh thng ener ca tip gip cng-knh.
b) Trng thi knh dn ca JFET khi c in p cung cp cc mng-ngun.
Khi tng gi tr ca in p mng-ngun v c nh gi tr ca v
GS
, ta thy rng: i vi mt gi
tr nh ca in p mng-ngun, nh cho hnh 3.21a, th s c mt knh in tr kt ni gia
mng v ngun, JFET lm vic vng tuyn tnh v dng mng s ph thuc vo in p
mng-ngun v
DS
. Vi gi thit i
G
0, dng vo ti cc mng v ra cc ngun nh
MOSFET. Tuy nhin, hy lu rng in p phn cc ngc qua cc tip gip cng-knh ti
u knh dn pha cc mng s ln hn so vi in p u knh dn pha cc ngun, v nh vy
vng ngho s rng hn ti u knh dn pha cc mng ca JFET so vi u knh dn pha cc
ngun.
i vi cc gi tr ca v
DS
ln hn, th vng ngho ti pha cc mng s tr nn rng hn v tip
tc m rng cho n khi knh dn tht li gn cc mng nh hnh 3.21b. Vic tht knh xy ra
trc ht ti:
v
GS
- v
DSP
= V
P
hay: v
DSP
= v
GS
- v
P
(3.38)
Trong , v
DSP
l gi tr ca in p mng cn c knh dn va c tht. Khi knh dn ca
JFET tht li, th dng mng s bo ha, vn ging nh i vi MOSFET. Cc in t c gia
tc qua knh dn, c phng thch vo vng ngho, v c cun vo vng mng bi in
trng.
Hnh 3.21c, l trng thi ca JFET i vi cc gi tr ln hn na ca v
DS
. im tht s di
chuyn tin v pha cc ngun, thu ngn chiu di ca vng knh in tr. Nh vy, JFET chu
s iu bin di knh tng t nh MOSFET.
Hnh 3.20b, l trng thi ca JFET khi v
GS
c gim xung n mt gi tr m, lm tng
rng vng ngho, tc l lm tng in tr ca vng knh dn v rng ca knh dn lc ny
gim xung, vi W

< W. Do tip gip cng-knh c phn cc ngc, dng cng s bng dng
bo ha ngc ca tip gip pn, thng l mt gi tr rt nh nn y ta c th xem i
G
0. i
vi cc gi tr ca v
GS
m hn, th rng knh dn s tip tc gim xung, lm cho in tr ca
vng knh tip tc tng ln. Cui cng, s t n trng thi ca JFET nh hnh 3.20c, tc l
in p cng-knh t n gi tr in p tht [pinch-off voltage] v
GS
= V
P
. in p tht V
P
l gi
tr (m) ca in p cng-ngun tng ng ti thi im vng knh dn bin mt hon ton.
Knh dn s tr nn tht li khi hai vng ngho ca hai tip gip pn kt hp vi nhau ti trung
tm ca knh dn. Lc ny, in tr ca vng knh s tr nn v cng ln. Nu tng v
GS
m hn
na, v thc cht khng nh hng n bn cht bn trong ca JFET hnh 3.20c, nhng v
GS

phi khng c vt qu in p nh thng ener ca tip gip cng-knh.
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b) Trng thi knh dn ca JFET khi c in p cung cp vo cc mng-ngun.
Khi tng gi tr ca in p mng-ngun v c
nh gi tr ca v
GS
, ta thy rng: i vi mt
gi tr nh ca in p mng-ngun, nh cho
hnh 3.21a, th vn c mt knh in tr kt ni
gia mng v ngun, JFET lm vic vng
tuyn tnh v dng mng s ph thuc vo in
p mng-ngun v
DS
.
Vi gi thit i
G
0, chiu dng in vo ti
cc mng v ra cc ngun nh MOSFET.
Tuy nhin, hy lu rng in p phn cc
ngc qua cc tip gip cng-knh ti u knh
dn pha cc mng s ln hn so vi in p
u knh dn pha cc ngun, v nh vy vng
ngho s rng hn ti u knh dn pha cc
mng ca JFET so vi u knh dn pha cc
ngun.
i vi cc gi tr ca v
DS
ln hn, th vng
ngho ti pha cc mng s tr nn rng hn v
tip tc m rng cho n khi knh dn tht li
gn
cc
m
ng
nh

hn
h
3.2
1b.
Vi
c
tht
knh xy ra trc ht ti:
v
GS
- v
DSP
= V
P
hay: v
DSP
= v
GS
- V
P
(3.38)


Trong , v
DSP
l gi tr ca in p mng cn c
knh dn va c tht.
Khi knh dn ca JFET tht li, th dng mng s
bo ha, vn ging nh i vi MOSFET. Cc in
t c gia tc qua knh dn, c phng thch vo
vng ngho, v c cun vo vng mng bi in
trng gia mng v ngun.
Hnh 3.21c, l trng thi knh dn ca JFET i vi cc gi tr ln hn na ca v
DS
. im tht s
di chuyn tin v pha vng ngun, thu ngn chiu di ca vng knh in tr. Nh vy, JFET
chu s iu bin di knh tng t nh MOSFET.
c) H c tuyn i-v ca JFET knh-n.
Mc d cu to ca JFET khc rt nhiu so vi MOSFET, nhng h c tuyn i-v ca JFET hu
nh ging vi h c tuyn ca MOSFET, do vy y ta c th da vo s tng t ny v d
dng nhn c cc phng trnh ca JFET. Tuy nhin, du cho c s tng ng v m t
ton hc th cc phng trnh ca JFET thng c vit hi khc so vi cc phng trnh ca
MOSFET. Ta c th kho st cc phng trnh ny bt u vi cc biu thc i-v cho vng bo
ha ca MOSFET, m trong in p ngng V
TN
s c thay th bng in p tht V
P
, ta c:
( ) ( )
2
P
GS
2
P
n
2
P GS
n
DS
V
v
1 V
2
K
V v
2
K
i

= = (3.39)
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75
hoc c th vit:
2
P
GS
DSS DS
V
v
1 I i

= i vi: v
DS
v
GS
- V
P
0 (3.40)
trong thng s I
DSS

c xc nh bi biu thc:

2
P
n
DSS
V
2
K
I = hay
2
P
DSS
n
V
I 2
K = (3.41)
in p tht V
P
c gi tr in hnh trong khong t 0V n - 25V, nn I
DSS

c gi tr trong
khong:
10
- 5
A I
DSS
100A.
Da vo phng trnh (3.40), ta c th xc nh c c tuyn truyn t ca mt JFET lm
vic vng tht knh (hoc bo ha) nh hnh 3.22. I
DSS
l dng in chy trong JFET khi v
GS

= 0, v s tng ng vi dng in ln nht chy trong JFET cc trng thi lm vic nh mc
v tip gip cng lun lun c gi phn cc ngc vi v
GS
0.
Ton b h c tuyn i-v ca mt JFET knh-n cho hnh 3.23. Trong , dng mng s gim
t gi tr ln nht I
DSS
xung 0 khi v
GS
thay i t 0 n gi tr m ca in p tht V
P
.
Vng tuyn tnh ca JFET cng c th hin h c tuyn ra (hnh 3.23).
Khi v
DS
v
GS
- V
P
, ta c th nhn c biu thc cho vng tuyn tnh ca JFET bng cch dng
phng trnh vng tuyn tnh ca MOSFET. Thay th cc gi tr ca K
n
v V
TN
trong biu thc
(3.25), ta c:
DS
DS
P GS
2
P
DSS
DS
v
2
v
V v
V
I 2
i

= khi v
GS
V
P
, v v
DS
v
GS
- V
P
(3.42)
Cc phng trnh (3.40) v (3.42) biu din m hnh ton hc ca JFET knh-n.
cc ti liu tra cu thng s linh kin, in p tht V
P
thng c cho dng V
GS (off)
. Vng
bn phi ca ng t nt biu din v tr cc im tht ca hnh 3.23 l vng lm vic c s
dng nhiu trong cc b khuych i tuyn tnh (tc cc b khuych i c mo tn hiu nh
nht) v thng c xem nh vng c dng in khng i, vng bo ha hoc vng khuych
i tuyn tnh.
Vng in tr c iu khin bng in p l vng bn tri v tr ca cc im tht knh hnh
3.23 c gi l vng thun tr [ohmic region] hay l vng in tr c iu khin bng in
p. vng ny, JFET c th ng vai tr thc s nh mt in tr bin i, tc l in tr ca
JFET c iu khin bng in p cng-ngun t vo.
Theo hnh 3.23, ta thy rng: dc ca mi c tuyn chnh l in tr ca JFET gia mng v
ngun khi v
DS
< V
P
l mt hm s ca in p V
GS
. Khi v
GS
cng m th dc ca c tuyn
cng nm ngang tng ng vi mc in tr tng ln. Gi tr in tr c tnh theo in p
v
GS
t vo theo biu thc sau:
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76
( )
2
P GS
0
D
V / V 1
r
r

= (3.43)
trong : r
0
l gi tr in tr ng vi V
GS
= 0V v r
D
l gi tr in tr ti mt mc c th ca
V
GS
. i vi mt JFET knh-n c r
0
bng 10k (V
GS
= 0V, V
P
= - 6V), biu thc (3.43) s cho
r
D
= 40 k ti gi tr V
GS
= - 3V.
e) JFET knh-p.
JFET knh-p c ch to bng cch o li cc cc tnh ca cc vng bn dn tp n v p hnh
3.19, nh c m t trong hnh 3.24. Cng nh i vi PMOSFET, chiu dng in trong knh
dn l ngc vi chiu dng trong knh dn ca JFET knh-n, v cc cc tnh ca cc in p
phn cc khi lm vic l ngc li.
* Tm li, JFET lm vic da trn s phn cc ngc tip gip pn gia cng v knh dn. iu
ny s hnh thnh nn vng ngho bao quanh knh dn.
Nu gia hai cc mng v ngun c t mt in p th s c dng in chy qua knh dn,
v vi in p phn cc ngc trn tip gip cng-knh nn dng cng ch l dng r ngc rt
nh, c th b qua. in p phn cc ngc cng-knh cng s y cc ht ti a s trong knh
dn b vo vng cng, v vy s lm tng kch thc ca vng ngho, dn n lm gim tit din
ct ngang ca knh dn v nh vy lm gim dn in ca knh dn. Khi in p trn tip
gip cng-knh cng phn cc ngc hn na th rng hiu dng ca knh dn cng gim
cho n khi dng mng-ngun chy qua knh dn ngng hon ton. Ch lm vic ny ca
JFET tng i ging vi MOSFET kiu ngho nn JFET cng c phn cc tng t nh
mt MOSFET kiu ngho. Hn na, trong cc mch s dng JFET phi c thit k sao cho
m bo diode cng-knh lun lun c phn cc ngc. iu ny khng lin quan i vi
MOSFET.
Cc in dung cng-ngun v cng-mng ca JFET c xc nh bi in dung vng ngho
ca cc tip gip pn phn cc ngc, tc l ph thuc vo in p phn cc ngc nh c
xt phn in dung tip gip pn phn cc ngc chng II.
Cc phng trnh m t quan h dng-p ca JFET knh-n v knh-p c tm tt nh sau:
JFET knh-n. i
G
0 Khi v
GS
0 (V
P
< 0) (3.44)
Vng ngt:
0 i
DS
= iu kin
P GS
V v (3.45)
Vng tuyn tnh:
DS
DS
P GS
2
P
DSS
DS
v
2
v
V v
V
I 2
i

= iu kin 0 v V v
DS P GS
(3.46)
Vng bo ha:
2
P
GS
DSS DS
V
v
1 I i

= iu kin 0 V v v
P GS DS
(3.47)
JFET knh-p. i
G
0 Khi v
SG
0 (V
P
> 0) (3.48)
Vng ngt:
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77
0 i
SD
= iu kin
P SG
V v > (3.49)
Vng tuyn tnh:
SD
SD
P SG
2
P
DSS
SD
v
2
v
V v
V
I 2
i

+ = iu kin 0 v V v
SD P SG
+ (3.50)
Vng bo ha:
2
P
SG
DSS SD
V
v
1 I i

+ = iu kin 0 V v v
P SG SD
+ (3.51)
f) Cc thng s ca JFET.
Cc thng s k thut ca mt JFET knh-n cho hnh 3.25

3.5 MCH TNG NG CA FET.
M hnh tng ng ca mt dng c bn dn c th c dng n gin ha vic thit k
cc mch in t khi s dng cc dng c . i vi FET thng c in tr vo ln, do li
vo cc cng ca mt MOSFET l c cch ly vi phn cn li ca dng c bng lp xt
cch in. Do vy, MOSFET, c s cch ly gia li vo v li ra ca dng c rt tt nu
khng k i lng in dung nh, in dung ny tn s thp thng c b qua. Li vo ca
mt JFET c dng mt tip gip pn vi vng knh dn, tip gip ny c th cho mt dng ng
k nu c phn cc thun, nhng cc iu kin lm vic thng thng ca JFET, tip gip
ny thng c gi iu kin phn cc ngc v nh vy ch c dng r chy qua tip gip,
dng r ny vo khong nanoampere nn thng c b qua. V vy, c hai loi MOSFET v
JFET, phn mch vo cc cng l c cch ly hiu qu vi phn cn li ca dng c.
Do li ra ca mt FET c th to ra dng in, c xc nh theo in p cng, nn ta thng
m t li ra ca FET bng mt mch tng ng Norton, tc l tng trng li ra ca FET
bng mt ngun pht dng song song vi mt in tr.
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Hnh 3.26 l mch tng ng ca FET.
Trong , li vo cc cng l mch h,
cn li ra c tng trng bi mt ngun
dng c gi tr ph thuc in p vo V
GS
,
mc song song vi in tr ra R
o
. s
dng mch tng ng, ta cn phi xc
nh quan h gia dng in c to bi
ngun pht dng v in p vo, cng nh
gi tr ca in tr ra. chnh l quan h gia dng mng v in p t vo cc cng, tc l
c tuyn truyn t xt cc phn trn, c nhc li hnh 3.27 i vi c MOSFET v
JFET.
Theo hnh 3.27, r rng cc FET, quan h gia I
D
v V
GS
l quan h phi tuyn, nn phng
php thng dng xt mch tng ng
l dng m hnh tn hiu nh tc l xt nh
hng ca s thay i nh li vo ln li
ra ca FET, m hnh ny cho php to ra
mch tng ng cho dng c m c th
c s dng m t hot ng ca dng
c theo s thay i nh li vo. Hnh 3.28
l mch tng ng tn hiu nh ca mt
FET, trong : g
m
biu din mi lin h gia
s thay i nh in p vo V
GS
v kt
qu l s thay i nh dng mng I
D
.
Quan h ny tng ng vi dc [gradient]
ca c tuyn truyn t cho hnh 3.27
trong phm vi vng lm vic. Nh vy, g
m

c cho bi t s I
D
/ V
GS
nh m t
hnh 3.27b v c n v l dng in chia
cho in p, nn g
m
c gi l in dn [conductance]. Lu rng: g
m
l i lng I
D
/
V
GS
. m khng phi l I
D
/ V
GS
. R rng, gii hn ca g
m
c cho bi:
GS
D
m
dV
dI
g = (3.52)
T phng trnh (3.40), i vi JFET ta c:
2
P
GS
DSS D
V
v
1 I i

=
Bng cch ly vi phn dng mng theo in p cng, ta s xc nh c g
m
:
D
P
DSS
P
GS
P
DSS
m
i x
V
I
2
V
v
1
V
I 2
g =

= (3.53)
Vy, i vi JFET, g
m
t l thun vi cn bc hai ca dng mng. C th thc hin phn tch
tng t nhn c kt qu tng t cho MOSFET.
m hnh tng ng ca FET (hnh 3.28), r
d
tng trng cho in tr mng, tc l in tr
tn hiu nh t cc mng n cc ngun. S c
mt ca r
d
c ngha l in p mng-ngun s
tng ln theo dng mng v in tr r
d
s cho bit
s tng dc ca c tuyn trong vng bo
ha c tuyn ra ca FET.
Mch tng ng tn hiu nh l mt m hnh c
th dng biu din hot ng ca dng c, p
ng vi nhng thay i nh ca tn hiu vo. Tuy nhin, mch tng ng tn hiu nh phi
c s dng chung vi cc d liu trn c tuyn dc ca dng c, tc l hot ng ca dng c
p ng vi cc in p dc c th.
Nh xt cc phn trn, h c tuyn dc ca MOSFET v JFET l khng ging nhau v
ch lm vic thng thng ca FET, yu cu cc in p phn cc t vo cng khc nhau.
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Nhng cc c trng tn hiu nh ca chng v cc mch tng ng tn hiu nh l ging
nhau. Nn khi thit k cc mch bng FET cn phi p ng n c hai iu kin .
Mch hnh 3.28 l mch tng ng tn hiu nh c s dng nhiu tn s thp nhng
mch khng m t y hot ng ca FET ti tn s cao.
MOSFET bao gm hai vng dn, cng v knh dn c tch ri bi mt lp cch in. Cu
trc ny to thnh mt t in c lp cch in l in mi. JFET, lp cch in c thay th
bi vng ngho. Trong c hai trng hp, u c in dung hin din gia cng v knh dn v
cc in dung cc phn khc nh xt mc 3.2g phn trc. V vy, s tn ti cc in
dung gia mi cp chn ca FET.
tn s thp, nh hng ca cc in dung ny l nh nn chng thng c b qua (nh
hnh 3.28). Tuy nhin, tn s cao cc nh hng ca chng l ng k hn, nn chng cn phi
c k n nh m t hnh 3.29a. Gi tr ca mi t c m t trong hnh 3.29a vo khong
1pF.
S c mt ca C
GD
lm cho vic phn tch mch
bng FET phc tp hn nhiu. D nhin, ta c
th thay th cc nh hng ca in dung ny
bng cch tng gi tr in dung gia cng v
ngun. Trong thc t, th in dung gia cng
v ngun c cng nh hng nh C
GD
l (A+1)
C
GD
, trong A l h s khuych i in p
gia mng v cng.
V vy, c th m t FET tn s cao, bng m
hnh tng ng nh hnh 3.29b, trong
nh hng ca c hai in dung C
GS
v C
GD

c gp li thnh mt in dung C
T
s tng
trng cho tng in dung vo. in dung ny s
lm gim h s khuych i ca dng c tn
s cao v xut hin im ct ti tn s c xc
nh bi gi tr ca in dung v tr khng ca
u vo v t. Tr khng ny hu nh c
chi phi bi in tr vng ngun. Tuy nhin, trong mt vi trng hp, tr khng vo tng ng
vi in tr r
GS
trong mch tng ng.
nh hng ca in dung lm gim nhiu hot ng ca FET tn s cao. S c mt ca in
dung li vo s lm gim tr khng vo t vi trm M ti tn s thp c th xung vi chc
k ti tn s vo khong 100MHz.
3.6 PHN CC CHO TRANSISTOR HIU NG TRNG.
a) S phn cc.
Phn cc cho mch FET l xc nh s hot
ng ca mch khi khng c bt k tn hiu
vo no t vo mch. Trng thi hot ng
ca mch nh vy c gi l trng thi tnh
[quiescent] ca mch. i vi mch khuych
i, vic phn cc ch yu l xc nh dng
mng tnh v in p ra tnh.
Xt mch khuych i hnh 3.30, r rng l
dng mng tnh c xc nh bi in tr
mng R
L
v h c tuyn V-A ca FET. T
cc h c tuyn ra ca FET, ta thy rng
quan h gia dng mng v in p mng l
khng tuyn tnh. Thc vy, phn c tuyn
m ta thng s dng (vng bo ha), dng
mng l c lp vi in p mng nn iu
ny s lm cho vic xc nh iu kin tnh
phc tp hn. Mt phng php gii quyt vn ny l dng k thut th, cn c gi l
k thut ng ti. Mc d dng in chy qua in tr ti v FET l khng d xc nh, nhng
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in p t ngang qua chng phi l tng in p gia hai ng ngun cung cp (V
DD
- V
SS
).
in p ngang qua FET c xc nh bi h c tuyn ra ca FET v in p phn cc V
GS
. T
cc h c tuyn ra ca FET, c th thy rng, dng c bn ca h c tuyn ra ca FET l
ging nhau, s khc nhau ln nht l gi tr in p t vo cng V
GS
. Khi c dng in chy qua
FET v cng chy qua in tr ti s to ra st p trn chng. in p trn cc mng ca FET c
th xc nh theo biu thc:
V
DS
= V
DD
- I
D
R
L
.
xc nh ng ti, ta hy tnh in p trn cc mng ca FET (V
DS
) theo cc gi tr khc
nhau ca dng mng (I
DS
). Khi dng mng bng 0, th s khng c st p trn in tr ti v in
p mng s n gin l in p ngun cung cp V
DD
. Khi dng mng I
DS
tng ln, th in p
mng V
DS
gim, dc ca ng thng s l nghch o ca in tr ti R
L
. iu kin lm vic
thc t ca mch phi tha mn c hai quan h gia dng mng v in p mng l quan h h
c tuyn ra v quan h ng ti. xc nh iu kin ny, cn phi v c hai c tuyn
nh hnh 3.31. ng thng trong hnh c gi l ng ti, n cho bit nh hng ca in
tr ti lm gim in p mng. S giao cho ca ng ti vi mt trong nhng c tuyn ra s
tng ng vi im m ti c hai quan h trn l c tha mn. Chng hn, xt im A trn
ng ti hnh 3.31, th cho bit rng nu V
GS
c thit lp ti gi tr V
GS(A)
, th dng
mng s l I
D(A)
v in p mng (cng chnh l in p ra ca mch khuych i) s l V
DS(A)
.
th hnh 3.31 gip ta thy c ngha ca ng ti lu rng khi in p t ngang
qua FET cng vi in p ngang qua R
L
phi bng vi in p ngun cung cp V
DD
, khong
cch t im 0 n V
DS(A)
tng ng vi in p t ngang qua FET, v khong cch t V
DS(A)

n V
DD
tng ng vi in p st trn in tr
ti.
Khi in p t vo cng tng ln n gi tr
V
GS(B)
, th dng mng s tng ln v in p
mng s gim xung, nh c ch dn bi im
B trn c tuyn. Do vy, ng ti m t dng
mng v in p mng thay i theo cc gi tr
khc nhau ca in p cng. th hnh 3.31
m t cc c tuyn ca mt mch khuych i
vi mt gi tr R
L
cho. Nu gi tr in tr ti
thay i th dc ca ng ti s thay i, o
lm nh hng n c tnh ca mch
khuych i. Trong thc t, ngi thit k
thng phi i din vi vn chn mt gi tr
cho R
L
c hiu sut ti u nht. lm c
iu ny, cn phi xc nh im lm vic tng
ng vi v tr trn c tuyn cc iu kin tnh.
V vy, khi thit k mch ng dng, thng phi
bt u vi h c tuyn ra ca FET v xc nh gi tr ca in tr ti bng cch chn la im
lm vic l tng cho mch. V d, gi s s chn im lm vic tng ng vi im A trn
hnh 3.31, mt ng thng s c v tip theo qua im c chn n v tr V
DD
trn trc
ngang v to thnh ng ti. Gi tr ca R
L
cn thit c th suy ra bng cch tnh dc ca
ng ti . Khi bit im lm vic th s bit gi tr in p cng yu cu, v mch phn cc
cn thit phi c thit k theo in p cng .
im lm vic xc nh trng thi tnh ca mch v nh vy s nh c dng mng tnh v
in p ra. Khi t mt tn hiu nh vo li vo ca mch, th s bin i in p cng s lm
cho im lm vic ca mch di chuyn dc trn ng ti theo c hai pha ca im lm vic
tnh. Nu tn hiu vo ln ng k, th s lm cho hot ng ca mch chuyn vo vng ohmic
(vng tuyn tnh) hoc n gii hn nh in p ra t ti in p ngun cung cp. C hai trng
thi s lm mo dng tn hiu ra.
b) Cc kiu mch phn cc.
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(*) Mch phn cc c nh:
Hnh 3.32a l mch phn cc n gin nht cho JFET knh-n, c gi l mch phn cc c
nh, n l mt trong s cu hnh phn cc cho FET c th c gii trc tip bng cch dng
phng php tnh trc tip hay bng phng php th. Mch cho hnh 3.32a bao gm cc
mc in p ac V
i
v V
o
, v cc t ghp (C
1
v C
2
). Cc t ghp l h mch i vi tn hiu dc
v c tr khng thp (thc cht l ngn mch) i vi tn hiu ac. in tr R
G
m bo tn
hiu vo V
i
c ti li vo ca mch khuych i FET i vi tn hiu ac.
ch dc, ta c:
I
G
0A v 0 R I V
G G
G
R
= = V.
St p qua R
G
bng 0, cho php thay th R
G
bng mch tng ng nh hnh 3.32b, c v
li theo ch dc. p dng nh lut Kirchhoffs theo in p ca vng mch theo chiu kim
ng h hnh3.32b, ta c:
GG GS
V V = (3.54)
Do V
GG
l ngun dc c nh, in p V
GS
c gi tr khng i nn mch c tn gi l mch phn
cc c nh.
Gi tr dng mng c xc nh hon ton trc tip qua tnh ton theo phng trnh Shockleys
bit phng trnh (3.47):
2
P
GS
DSS D
V
V
1 I I

=

Do V
GG
l ngun dc c nh, in p V
GS
c gi tr khng i nn mch c tn gi l mch phn
cc c nh.
Gi tr dng mng c xc nh hon ton trc tip qua tnh ton theo phng trnh Shockleys
bit phng trnh (3.47):
2
P
GS
DSS D
V
V
1 I I

=
Phng php phn tch bng th da vo c tuyn truyn t ca FET. Bng cch chn cc
gi tr ca V
GS
ti cc im, ta s v
c c tuyn truyn t, chng hn,
chn:
V
GS
= V
P
/ 2, ta s c dng mng tng
ng l: I
DSS
/ 4. Quan h i
D
= f(v
GS
)
c v nh hnh 3.33a.
Gi tr khng i ca V
GS
c v
thnh mt ng dc ti:
V
GS
= - V
GG
.
Ti im bt k trn ng dc, tr s
ca V
GS
l - V
GG
v tr s ca I
D
phi
c xc nh theo ng dc ny.
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im giao cho ca hai ng l nghim chung ca mch - thng c xem nh im lm
vic tnh [Quiescent operating point]. Tr s I
D
tnh c xc nh bng cch ging ng ngang
t im Q n trc I
D
nh hnh 3.33b, chnh l gi tr:
Q
D
I trn th.
in p mng-ngun ca mch ra cng c xc nh bng cch p dng nh lut Kirchhoffs
theo in p nh sau:
+ V
DS
+ I
D
R
D
- V
DD
= 0
v V
DS
= V
DD
- I
D
R
D
(3.55)
Theo mch hnh 3.32, ta c: V
S
= 0V (3.56)
V
DS
= V
D
- V
S

hay V
D
= V
DS
(3.57)
Mt khc, ta cng c: V
GS
= V
G
- V
S

hay V
G
= V
GS
(3.58)
Mch phn cc c nh yu cu hai ngun cung cp, nn t c s dng trong thc t.

(**) Mch t phn cc [self-bias configuration].
Mch t phn cc loi tr vic cn phi c hai ngun cung cp dc mch phn cc c nh.
Vic iu khin in p cng-ngun c xc nh bng in p trn in tr R
S
c ni vo
cc ngun nh mch hnh 3.34a.
ch dc, cc t c th c thay bng mch h tng ng v in tr R
G
c thay bi
mt ngn mch tng ng, v I
G
= 0A. Dn n mch hnh 3.34b cho ch dc.
Dng qua R
S
l dng ngun I
S
, nhng I
S
= I
D
nn ta c:
S D
S
R
R I V =
i vi vng khp kn ch hnh 3.34b, ta tm c:
S
R GS
S
R GS
V V 0 V V = =
hay: V
GS
= - I
D
R
S
(3.59)
Lu trong trng hp ny V
GS
l
mt hm s ca dng ra I
D
v c tr s
khng phi l c nh nh mch
phn cc c nh.
Phng trnh (3.59) c xc nh
bng cu hnh mch v phng trnh
Shockleys s cho mi lin h gia
cc i lng vo v ra ca dng c.
C hai phng trnh lin quan hai bin
s nh nhau nn s cho php tm
nghim chung ca chng theo c hai
cch: hoc l tnh trc tip hoc bng
th.
+ Phng php tnh trc tip c th nhn c n gin bng cch thay th biu thc (3.59) vo
phng trnh Shockleys nh sau:
2
P
S D
DSS
2
P
S D
DSS
2
P
GS
DSS D
V
R I
1 I
V
R I
1 I
V
V
1 I I

+ =

=
Phng trnh trn c th nhn c dng sau:
0 K I K I
2 D 1
2
D
= + +
Gii phng trnh bc hai c nghim thch hp cho I
D
.
+ Phng php th yu cu trc ht l phi thit lp c tuyn truyn t ca dng c nh
cho hnh 3.35a. V biu thc (3.59) s xc nh mt ng thng trn cng mt th, nn ta
phi tm hai im trn th v v ng thng qua hai im trn. iu kin r rng nht l p
dng I
D
= 0 A, ta s c V
GS
= 0 V, tc l xc nh c mt im trn ng thng nh hnh
3.35a. im th hai cho phng trnh (3.59) yu cu chn mt gi tr ca V
GS
(hoc I
D
), gi tr
tng ng ca i lng cn li c xc nh bng biu thc (3.59). Khi c cc gi tr ca I
D

v V
GS
tm c trn, ta s v c ng thng c phng trnh ng thng (3.59). Chng
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hn, gi s ta chn gi tr I
D
bng mt na gi tr dng bo ha, tc l:
2
I
I
DSS
D
= suy ra:
2
R I
R I V
S DSS
S D GS
= =
Kt qu l ta c im th hai cho ng thng v nh hnh 3.35b. ng thng xc nh bng
phng trnh (3.59) s ct c tuyn truyn t ca dng c ti im tnh. Cc gi tr ca I
D
v
V
GS
ti im tnh c xc nh s c dng tm cc i lng khc. Gi tr ca V
DS
c
th c xc nh bi nh lut Kirchhoffs cho in p i vi mch ra, ta c:
0 V V V V
DD
D
R DS
S
R
= + +
v:
D D S S DD
D
R
S
R DD DS
R I R I V V V V V = =

hay ( )
D S D DD DS
R R I V V + = (3.60)
Ngoi ra:
S D S
R I V = (3.61)
0 V
G
= (3.62)
v
D
R DD S DS D
V V V V V = + = (3.63)
(***) Mch phn cc theo kiu phn p:
Mch phn cc theo kiu phn p cho hnh 3.36a, v c v li hnh 3.36b phn tch dc.
Lu rng, tt cc cc t, k c t r C
S
c thay bng mch h tng ng. Ngoi ra, ngun
V
DD
c tch ra thnh hai ngun nh nhau cho php phn tch cc vng vo v vng ra ca
mch. Do I
G
= 0A, nn theo nh lut Kirchoffs p dng cho nt dng ti cc cng ta c:
2
R
1
R
I I = ,v mch tng ng ni tip pha tri ca hnh c th c dng tm gi tr
ca V
G
. in p V
G
bng in p trn R
2
, c th tm c bng cch dng nh lut phn p:
2 1
DD 2
G
R R
V R
V
+
= (3.64)
p dng nh lut Kirchoffs theo p cho vng mch ch r hnh 3.36b theo chiu kim ng
h, s c:
0 V V V
S
R GS G
= v
S
R G GS
V V V =
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Thay
S D S S
S
R
R I R I V = = , ta s c:
S D G GS
R I V V = (3.65)
Cc i lng V
G
v R
S
l khng i bi cu trc mch. Phng trnh (3.65) vn l phng trnh
ca mt ng thng nhng im gc b dch i mt khong trn trc ngang l V
G
,
nh hnh 3.37a, khi chn gi tr dng I
D
= 0mA.
mA 0
D
I
G GS
V V
=
= (3.66)
i vi im th hai, cho V
GS
= 0V, thay vo phng trnh (3.65) tm gi tr I
D
, ta c:
V 0
GS
V
S
G
D
R
V
I
=
=
(3.67)

Qua hai im c xc nh trn hai trc nh trn ta s v c ng thng tng ng vi
phng trnh (3.65). im giao cho ca ng thng vi c tuyn truyn t vng bn tri
ca trc dc s xc nh im lm vic v cc mc I
D
v V
GS
tng ng.
Do im ct trn trc dc c xc nh bi I
D
= V
G
/ R
S
v V
G
l khng i bi mch vo, nn
khi tng tr s ca R
S
s lm gim mc dng I
D
nh m t hnh 3.37b.
R rng l: Khi tng tr s ca R
S
, s dn n gi tr tnh ca dng I
D
gim thp v V
GS
s c gi
tr m hn.
Mt khi xc nh c cc tr s ca
Q
D
I v
Q
GS
V th vic phn tch mch vn s c tip
tc bng cch tnh cc i lng cn thit khc nh sau:
( )
S D D DD DS
R R I V V + = (3.68)
D D DD D
R I V V = (3.69)
S D S
R I V = (3.70)
2 1
DD
2
R
1
R
R R
V
I I
+
= = (3.71)
- cc phn trn y ta xt cc mch phn cc khc nhau cho JFET knh-n, c th phn tch
hon ton tng t ch dc cho mch dng MOSFET kiu ngho knh-n.
im khc bit chnh gia hai loi ch: MOSFET kiu ngho knh-n c th c cc im lm
vic vi cc gi tr dng ca V
GS
v cc mc I
D
vt qu tr s I
DSS
.
Trong thc t, i vi tt c cc cu hnh phn cc xt trn u c th c dng phn
tch nu thay JFET bng MOSFET kiu ngho.
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- i vi MOSFET kiu tng cng
thng c c tnh truyn t hon ton
khc vi JFET v MOSFET kiu ngho
gp trn, dn n phng php gii
bng th khc nhiu vi cc phn
trc. MOSFET kiu tng cng
knh-n, c dng mng bng 0, vi cc
mc in p cng-ngun thp hn so vi
mc in p ngng V
TN
V
GS(Th)
nh
m t hnh 3.38. i vi cc mc V
GS

cao hn so vi V
GS(Th)
, dng mng c
xc nh bi:
( )
2
) Th ( GS GS
n
D
V V
2
K
I = (3.72)
Thng thng, trang d liu ca FET c cc thng s in hnh cho tr s in p ngng v
mc dng mng (I
D(on)
) tng ng vi mc V
GS(on)
, nn hai im trung gian s c xc nh
nh hnh 3.38. v ton b c tuyn truyn t, ta phi xc nh hng s K
n
ca biu thc
(3.72) t cc thng s cho trang d liu ca FET bng cch thay th vo phng trnh
(3.72), ta c:
( )
2
) Th ( GS ) on ( GS
n
) on ( D
V V
2
K
I =
v
( )
2
) Th ( GS ) on ( GS
) on ( D
n
V V
I 2
K

= (3.73)
Khi K
n
c xc nh th cc mc khc ca I
D
c th c xc nh chn cc gi tr ca
V
GS
, chng hn nh cc im
1
D
I v
2
D
I nh trn hnh 3.38.
(*) Mch phn cc c hi tip m cho MOSFET kiu tng cng.
Mch phn cc thng dng cho MOSFET kiu tng cng c cho hnh 3.39a. in tr R
G

s mang mt in p ln thch hp n cng iu khin MOSFET dn [on]. V I
G
= 0mA
v 0 V
G
R
= V, nn mch tng ng dc cho hnh 3.39b. Do c kt ni trc tip gia cc
mng v cc cng, nn ta c: V
D
= V
G
.
v
GS DS
V V = (3.74)

i vi mch ra, ta c: V
DS
= V
DD
- I
D
R
D
, thay (3.74), phng trnh tr thnh:
D D DD GS
R I V V = (3.75)

Phng trnh (3.75) l phng trnh ng thng, cho php xc nh qua hai im trn hai trc
ca thi. Thay I
D
= 0mA vo phng trnh (3.75), ta c:
mA 0
D
I
DD GS
V V
=
= (3.76)

Thay th V
GS
= 0V vo phng trnh (3.75), ta c:
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V 0
GS
V
D
DD
D
R
V
I
=
= (3.77)
Cc c tuyn c xc nh bi phng trnh (3.72) v (3.75) c v hnh 3.39c. V giao
cho ca hai c tuyn l im lm vic yu cu.
(**) Mch phn cc kiu phn p cho MOSFET kiu tng cng.
Mch phn cc thng dng th hai i vi MOSFET kiu tng cng cho hnh 3.40. V
0 I
G
= mA, nn ta c:
2 1
D 2
G
R R
V R
V
+
= (3.78)
p dng nh lut Kirchoffs theo p cho vng mch ch hnh 3.40, ta c:
0 V V V
G
R GS G
= + v
S
R G GS
V V V =
V
S D G GS
R I V V = (3.79)
i vi mch ra: 0 V V V V
DD
D
R DS
S
R
= + + v
D
R
S
R DD DS
V V V V =
hay: ( )
D S D DD DS
R R I V V + = (3.80)
Khi c cc c tuyn ca I
D
theo V
GS
v phng trnh (3.79), ta c th v hai c tuyn trn cng
mt th v li gii c xc nh ti im giao nhau ca chng. Vi cc tr s ca
Q
D
I v
Q
GS
V bit, ta c th xc nh c ton b cc i lng cn li ca mch, nh V
DS
, V
D
v V
S
.
c) Chn im lm vic.
cc h c tuyn ra ca FET thng c chia thnh hai vng: vng tuyn tnh (vng ohmic
vng thun tr) v vng bo ha. Trong thc t, khi s dng FET trong mch khuych i
thng trnh cc vng lm vic ngoi vng bo ha, nh ch hnh 3.41.
Vng A l vng ohmic khng c s
dng v vng ny dng mng ph
thuc nhiu vo in p mng. Khi thit
k mt mch khuych i tuyn tnh, ta
mong mun dng mng c iu
khin bng tn hiu vo m khng bng
in p ngang qua FET.
Vng B c th to nn bi hai yu t
ty thuc vo loi FET c s dng.
i vi tt cc cc dng c u c gi
tr dng mng cho php ln nht trc
khi dng c b nh thng, khi thit k
phi m bo rng dng c khng hot
ng vng ny. i vi cc JFET cng c gii hn bt buc l khng c phn cc thun
Hinh 3.41:
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tip gip cng. Mt trong nhng gii hn bt buc khc l cn phi hn ch dng mng hoc
in p cng ln nht c th c s dng.
Vng C l vng in p nh thng ca FET, nu vt qu gi tr in p nh thng, vi thi
gian lu s rt nguy him cho dng c. Cui cng, vng cm th t c khng ch bi cc
iu kin tiu tn cng sut. Cng sut c tiu tn FET c cho bi tch ca dng in
mng v in p mng (v dng cng l khng ng k) v dn n pht sinh nhit nng. Nhit
nng ny s lm cho nhit ca dng c tng ln nn hot ng ca dng c phi c hn ch
bng nhit cho php ca tip gip. Vng lm vic tha mn cc iu kin tiu tn cng sut
c gii hn bi ng hyperbola (tc l v tr cc im m khi dng nhn vi in p bng
mt hng s) nh m t bi vng D trn hnh 3.41.
Khi chn im lm vic cho mch khuych i, phi m bo mi transistor c gi trong
phm vi cc gii hn an ton v trong phm vi vng lm vic nh mc ca n. iu ny thng
yu cu in p cung cp thp hn so vi in p nh thng ca dng c, cng nh gi tr dng
mng v cc gii hn v cng sut ln nht khng b vi phm.
c dao ng in p ln nht th im lm vic thng c t gn gia ng ti nh
hnh 3.41, iu ny cho php truyn tn hiu vo ln nht trc khi tn hiu ra mo dng.
V d 3.3: Hy thit k mch phn cc ca mt b
khuych i cho JFET knh-n 2N5486 bng cch s
dng c tuyn truyn t ca dng c v bng cch
tnh trc tip. Bit V
P
= - 6V v I
DSS
= 8mA; ngun s
dng V
DD
= 15V v in tr ti R
L
= 2,5k; mch
khuych i c in p ra tnh l 10V.
Gii: Mch khuych i thch hp c cho nh hnh
v bn,
T biu thc (3.47) ta bit rng:
2
P
GS
DSS D
V
v
1 I i

=
bng cch dng cc s liu cho
i vi V
P
v I
DSS
, ta c th v c
tuyn truyn t nh sau:
in p ra tnh V
o (Q)
c cho bi,
V
o(Q)
= V
DD
- V
L

Trong V
L
l st p trn in tr
ti R
L
.
V vy, gi tr cn thit ca V
L
c
cho bi:
V
L
= V
DD
- V
o(Q)
= 15-10 = 5V.
V dng mng tnh yu cu l:
mA 2
k 5 , 2
V 5
R
V
I
L
L
) Q ( D
= = =
T c tuyn truyn t, gi tr ny ca dng mng s tng ng vi mt gi tr in p
cng-ngun l -3V.
Do cng ni t nn in p cng-ngun phi nhn c bng st p trn R
S
l +3V.
Do , tr s ca R
S
s l:
k 5 , 1
mA 2
V 3
I
V
R
D
GS
S
= = =
Gi tr ca R
G
thng chn khong 470k l thch hp cn c in p phn cc
cng l 0V. R
G
thng c chn c mt tr khng vo cao, nhng khng phi qu
cao lm cho st p to nn bi cc nh hng ca dng cng (mt vi nanoampere) tr
nn ng k.
Ta cng c th s dng phng php tnh trc tip c kt qu nh s dng
phng php th trn.
Nh trn, ta c gi tr dng mng l:
CU KIN IN T
BIN SON DQB, B/M TVT-HKT CHNG 3: TRANSISTOR HIU NG TRNG
88
mA 2
k 5 , 2
V 5
R
V
I
L
Q
o
Q
D
= = =
T phng trnh Shockleys (3.47):

2
P
GS
DSS D
V
V
1 I I

= suy ra: ( ) 3 1 6
I
I
1 V V
8
2
DSS
D
P GS
= =

= V.

V tm c gi tr ca R
S
= 1,5 k Nh xc nh theo phng php th.
3.7 MT S NG DNG CA TRANSISTOR HIU NG TRNG.
a) Cc mch khuych i bng FET.
FET c dng rng ri trong cc b khuych i yu cu tp m thp v c in tr vo cao.
C hai loi FET knh-n v knh-p u c dng nhng n gin, ta xt cc mch dng cc
mch khuych i dng FET knh-n.
Vic thit k cc b khuych i da vo FET phi tha mn c iu kin dc v iu kin tn
hiu nh. Hnh 3.42 l mch khuych i n gin dng MOSFET v JFET, trong mch ch
n gin gm mt transistor, mt ti in tr v mt mch phn cc. S khc nhau gia cc
mch trn xut pht t yu cu phn cc khc nhau ca mi loi transistor.
Tt c cc kiu phn cc cho mch khuynch i dng FET trn, c th m t ph hp bi mch
cho hnh 3.30 xt mc 3.6a, ch cn chn la cc gi tr in p cung cp V
GG
thch hp
cho cng. Khi s dng cc dng c knh-n, th in p ny phi dng i vi cc MOSFET
tng cng, m i vi cc JFET, v thng bng 0 i vi cc MOSFET ngho [DE
MOSFET]. i vi cc dng c knh-p, th cc tnh ca cc in p trn l ngc li.
Tr li vi mch hnh 3.30, tn hiu vo c t gia cc cng v cc ngun ca FET, v tn
hiu ra l c ly gia cc mng v cc ngun, v vy cc ngun l cc chung gia mch vo
v mch ra, nn cc b khuych i c dng thng dng ny c gi l b khuych i ngun
chung [common-source amplifiers]. V d, cc mch hnh 3.42 trn l cc mch khuych i
ngun chung.
Mc d mch hnh 3.30 c th thc hin c, nhng n thng bt tin khi phi dng ring r
ngun cung cp cho cng. Thng thng, in p phn cc nhn c ch t mt ngun cung
cp chung cho c mch phn cc cng v mch mng-ngun. i vi DE MOSFET, in p
phn cc thng bng 0 Volt, c th nhn c n gin bng cch ni in tr R
G
xung t
[ground] nh hnh 3.42a. Mch phn cc i vi MOSFET tng cng phc tp hn mt cht,
do i hi in p phn cc khc 0V. Tuy vy, do in p phn cc yu cu nm trong khong
gia in p cung cp cc mng V
DD
v in p cung cp cc ngun V
SS
, nn in p phn
cc c th nhn c mt cch d dng bng cch dng mch in tr di dng cu phn p
nh hnh 3.42b. i vi JFET, in p phn cc s c trch ra ng ngun cung cp vo
cc mng v cc ngun. Trong trng hp ny, mch phn cc thng s dng in tr ni vo
cc ngun (gi l in tr ngun) nh hnh 3.42c. Dng in ra cc ngun s chy qua in
tr ngun to ra st p trn in tr ngun, lm cho in p trn cc ngun cao hn V
SS
, nu ni
mt in tr cng vi V
SS
th cc cng s c phn cc vi in p bng st p trn in tr R
S
,
v cc tnh in p ngc li i vi cc ngun. K thut phn cc ny c gi l phn cc t
ng.
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Mch tng ng tn hiu nh cho mt b khuych i bng FET hnh 3.30 c m t
hnh 3.43. Khi c mch tng ng tn hiu nh ca b khuych i bng FET, ta c th xc
nh c h s khuych i in p tn hiu nh. T hnh 3.43, r rng l, nu b qua nh
hng ca in dung vo C, th in p trn cc cng ca FET cng chnh l in p ti li vo
v
i
.
in p ra c xc nh bi ngun pht dng v in tr tng ng ca hai nhnh mc song
song l in tr mng tn hiu nh r
D
v in tr ti R
L
. Do vy, in p ra ca mch khuych
i s l:
( ) ( )
L D i m L D GS m o
R // r v g R // r v g v = = ( )
L D m
i
o
R // r g
v
v
=
Du tr trong biu thc cho bit in p ra s gim xung khi dng ra tng, do in p ra thay
i ngc vi in p vo, nn y l mt b khuych i o.
H s khuych i in p c xc nh n gin bng tch ca h s in dn g
m
ca FET v
in tr tng ng ca hai nhnh song song r
D
v R
L
.
H s khuych i in p
L D
L D
m
i
o
R r
R r
g
v
v
+
= = (3.81)
Chng ta cng d dng xc nh in tr vo tn hiu nh v in tr ra tn hiu nh ca b
khuych i t mch tng ng. in tr vo n gin bng vi in tr cng R
G
. Bi v in
tr vo ca FET rt cao nn in tr cng c th thng c chn cao cn thit ph hp vi
ng dng c th. in tr ra c cho bi hai nhnh song song r
D
v R
L
.
in tr vo v in tr ra c tnh t mch tng ng tn hiu nh nn c gi l in tr
tn hiu nh, ngha l n l quan h gia cc in p tn hiu nh v cc dng in tn hiu nh.
Cc in tr tn hiu nh khng lin quan n cc in p dc v dng in dc trong mch.
V d 3.4: Xc nh h s khuych i in p tn hiu nh, in tr vo v in tr ra
ca mt b khuych i bng FET nh hnh (a) di y,
bit rng: r
D
= 100 k v g
m
= 2 ms.
Gii: Bc u tin l xc nh mch tng ng tn hiu nh ca b khuych i.
Da vo m hnh tng ng ca FET, d dng xc nh c mch tng ng cho
b khuych i nh hnh (b).
R rng t mch tng ng, ta c:
( ) 9 , 3
10 x 2 10 x 100
10 x 2 10 x 100
10 x 2
R r
R r
g R // r g
v
v
3 3
3 3
3
L D
L D
m L D m
i
o
=
+
=
+
= =


Du tr cho bit y l mch khuych i o. in tr vo ca mch tn hiu nh ch
n gin l R
G
, v v vy:

CU KIN IN T
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90
M 1 R r
G i
= =

in tr ra ca mch tn hiu nh c cho bi:
k 0 , 2
10 x 2 10 x 100
10 x 2 10 x 100
R r
R r
R // r r
3 3
3 3
L d
L d
L d o

+
=
+
= =
V d ny xt mch dng DE MOSFET knh-n, thc hin tnh ton tng t i vi mch
dng linh kin kiu khc ca FET.

Gi tr in hnh cho in tr mng tn hiu nh r
d
nm trong khong 50 n 100 k; in tr
ny thng thng ln hn nhiu so vi in tr ti R
L
, nn trong trng hp ny nh hng ca
r
d
thng c b qua, v h s khuych i c th c xp x bng biu thc:
L m
i
o
R g
v
v

R rng l bng cch thay i gi tr ca R
L
th ta s thay i c h s khuych i ca mch
khuych i ch tn hiu nh, nhng phi lu rng iu ny cng s nh hng n dng
mt chiu chy trong FET.
hiu nh. Cc in tr tn hiu nh khng lin quan n cc in p dc v dng in dc trong
mch.
V d 3.4: Xc nh h s khuych i in p tn hiu nh, in tr vo v in tr ra
ca mt b khuych i bng FET nh hnh (a) di y, bit rng: r
D
= 100 k v g
m

= 2 ms.
Gii: Bc u tin l xc nh mch tng ng tn hiu nh ca b khuych i.
Da vo m hnh tng ng ca FET, d dng xc nh c mch tng ng cho
b khuych i nh hnh (b).
T mch tng ng, ta c:
( ) 9 , 3
10 x 2 10 x 100
10 x 2 10 x 100
10 x 2
R r
R r
g R // r g
v
v
3 3
3 3
3
L D
L D
m L D m
i
o
=
+
=
+
= =


Du tr cho bit y l mch khuych i o. in tr vo ca mch tn hiu nh ch
n gin l R
G
, v v vy:
M 1 R r
G i
= =
(a) (b)
CU KIN IN T
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91

in tr ra ca mch tn hiu nh c cho bi:
k 0 , 2
10 x 2 10 x 100
10 x 2 10 x 100
R r
R r
R // r r
3 3
3 3
L d
L d
L d o

+
=
+
= =
V d ny xt mch dng DE MOSFET knh-n, thc hin tnh ton tng t i vi mch
dng linh kin kiu khc ca FET.

Gi tr in hnh cho in tr mng tn hiu nh r
d
nm trong khong 50 n 100 k; in tr
ny thng thng ln hn nhiu so vi in tr ti R
L
, nn trong trng hp ny nh hng ca
r
d
thng c b qua, v h s khuych i c th c xp x bng biu thc:
L m
i
o
R g
v
v

R rng l bng cch thay i gi tr ca R
L
th ta s thay i c h s khuych i ca mch
khuych i ch tn hiu nh, nhng phi lu rng iu ny cng s nh hng n dng
mt chiu (dc) chy trong FET.
b) Mch khuych i lp li cc ngun [ Source follower amplifier ].
trn ta xt cc mch khuych i Ngun-chung. Mt s cu hnh khuych i khc c
dng rng ri l mch hnh 3.44. Trong cc mch , cc mng l chung cho c mch vo v
mch ra (lu rng, V
DD
l kt ni hiu dng vi t i vi cc tn hiu nh, tc l c xem
nh ngn mch ngun i vi tn hiu ac). Do , cc mch trn c gi l cc mch khuych
i mng-chung.
T nh ngha ca g
m
, ta c:
GS
D
m
v
i
g = ( )
S G m GS m D
v v g v g i = =
V in p ti cc ngun v
S
c cho bi: v
S
= R
S
i
d
, nn suy ra:
G
m S
G
m S
m S
S
v
1
g R
1
1
v
g R 1
g R
v
+
=
+
=
Nu 1/ R
S
g
m
<< 1, suy ra v
S
v
G
. Ni cch khc, in p cc ngun (in p ra) c khuynh
hng lp li gi tr in p cng (in p vo). V l do ny m cc mch trn thng c gi
l mch lp li ngun [source followers]; khi tn hiu ra lp li tn hiu vo, nn cc mch
loi ny l mch khuych i khng o.
Do tn hiu ra ca mch lp li ngun rt gn ging nh tn hiu vo, nn h s khuych i ca
mch khuych i l v
o
/ v
i
xp x bng n v. Trong nhiu trng hp, cc mch c s dng
v in tr vo ca chng rt cao v in tr ra ca mch tng i thp. in tr vo c xc
nh bi in tr cng R
G
,v in tr ra c xc nh bng nhng c tnh ca FET. xc
nh in tr ra ca mch, cn phi bit in p ra v
S
s thay i theo dng ra i
S
, nh th no,
khi khng c bt k s thay i no li vo.V vy, in tr ra ca mch r
o
l t s v
S
/ i
S
, vi
(a) (b)
CU KIN IN T
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92
v
G
= 0.
Nh trn ta c: ( )
S G m GS m D
v v g v g i = = , thay th v
G
= 0, ta c:
( )
S m GS m D
v 0 g v g i = =
Do dng cng l khng ng k, nn gi tr ca dng ngun bng gi tr ca dng mng. Nhng
cc dng ny c xt theo chiu quy c l chy vo dng c v do , i
S
= - i
D
.
V vy:
S m D S
v g i i = = v
m S
S
D
g
1
i
v
r = =
V g
m
bin i theo dng mng, nn in tr ra cng s thay i theo dng mng, nhng gi tr
in hnh ca in tr ra l vi trm ohm i vi dng l vi trm miliampere.
Cc mch lp li ngun c gi tr in tr vo khng thp nh mch lp li emitter dng
transistor bipolar (s xt chng tip theo), vi in tr vo rt cao ca mch lp li ngun,
lm cho mch c s dng nhiu, nh cc b khuych i m, c h s khuych i bng
n v.
c) Mch khuych i vi sai.
Cc mch khuych i vi sai l mch c th to mt tn hiu ra t l vi s khc bit gia hai tn
hiu vo v c kh nng loi b cc tn hiu cng pha c hai li vo, c tnh sau c xem
nh s kh b tn hiu cng pha [common-mode rejection].
Hnh 3.45a, l dng thng thng ca mch khuych i vi sai thng c dng cc tng vo
ca cc b khuych i thut ton.

Hai mch khuych i FET c phn chia mt in tr ngun chung R
S
, v cc in tr cng
v mng ca mi mch c cc gi tr bng nhau. Cc FET c chn c c tnh nh nhau
mch c tnh i xng. Mch c hai u vo v
1
v v
2
, v hai u ra v
3
v v
4
. S tng ng
ch tn hiu nh ca mch khuych i vi sai cho hnh 3.45b.
in p vo v in p ra c o vi im tham chiu chung (t). Cc in tr cng thng
c chn ln t nh hng ln hot ng ca mch v hn na l thit lp cc iu kin
phn cc dc thch hp cho FET, do vy cc in tr cng c b qua trong mch tng ng
tn hiu nh. Vi gi thit rng cc linh kin trong mch l i xng nhau, c in dn g
m
v
in tr mng r
d
ca c hai mch l bng nhau.
Do in p vo v
1
v v
2
c o i vi t, nn in p t ngang qua tip gip cng-ngun ca
mi FET l:

S 1 1 GS
v v v = v
S 2 2 GS
v v v =

T nh lut Kirchhoffs, ta thy rng: Tng cc dng in chy vo mt nt no ca mch
bng 0.
p dng nguyn tc trn cho mt s im trong mch tng ng, ta c cc phng trnh ng
thi nh sau:
Xt ti im P
1
ta c:
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( ) ( )
0
R
v
r
v v
v g
r
v v
v g
S
S
d
S 4
2 GS m
d
S 3
1 GS m
=

+ +

+
Thay th v
GS1
v v
GS2
c trn, ta c:
( )
( )
( )
( )
0
R
v
r
v v
v v g
r
v v
v v g
S
S
d
S 4
S 2 m
d
S 3
S 1 m
=

+ +

+ (3.82)
p dng cho im P
2
ta c:
0
R
v
R
v
R
v
S
S
D
4
D
3
= + + (3.83)
V ti im P
3
ta c:
( )
( ) 0 v v g
r
v v
R
v
S 1 m
d
S 3
D
3
= +

+ (3.84)
T cc phng trnh trn, ta c th suy ra biu thc cho cc in p ra ca mch v
3
v v
4
theo
cc s hng ca hai u vo, nhng vic gii kh phc tp. T phng trnh (3.83), ta gi s
rng s hng v
S
/ R
S
l rt nh v vy, nh hng ca s hng trn c th b qua; tng ng
vi dng tn hiu nh chy qua in tr ngun R
S
khng i, tc l lm vic nh mt ngun
dng hng.
Nu b qua s hng v
S
/ R
S
, th phng trnh (3.83) tr thnh:
0
R
v
R
v
D
4
D
3
= + (3.85)
suy ra: v
3
= - v
4
.
Kt hp kt qu trn vi cc phng trnh (3.82) v (3.84), ta nhn c biu thc cho cc tn
hiu ra:
( )

= =
D d
m
2 1 4 3
R
1
r
1
2
g
v v v v (3.86)
Nh vy, cc tn hiu ra l bng nhau v ngc chiu cc tnh v gi tr ca chng c xc
nh bng s chnh lch gia cc tn hiu hai li vo, nn gi l b khuych i vi sai.
in p ra vi sai ca mch trn v
o
c cho bng v
3
- v
4
v v v
3
v v
4
l bng nhau v ngc
du, nn h s khuych i ca mch c dng n gin:
H s khuych i in p vi sai

= =
D d
m
2 1
4 3
i
o
R
1
r
1
g
v v
v v
v
v

Lu phn xt trn (mc 3.7a) thy rng: r
d
thng ln hn nhiu so vi R
D
nn ta c th
n gin biu thc trn:
H s khuych i in p vi sai - g
m
R
D
c dng tng t biu thc n gin ca b khuych i FET xt phn trc.
d) FET nh mt ngun dng hng.
FET c th xem nh mt ngun dng khng i vi iu kin l in p mng-ngun ln hn
in p tht, dng mng ca FET s c iu khin bi in p cng-ngun. Do vy, mt
ngun dng hng rt n gin c th c to
thnh d dng khi p dng mt in p khng i
n cc cng. i vi JFET v DE MOSFET, cc
dng n gin nht ca mch ngun dng hng cho
hnh 3.46a v 3.46b. cc mch ny, ch kt ni
n gin cc cng vi cc ngun cho dng
mng bng I
DSS
, dng in to thnh bi cc mch
nh vy c xc nh bng cc c tnh ca dng
c v thng c gi tr trong khong 1mA n 5
mA. xut hin cc ngun dng hng thng
l cc FET n, vi chn ngun v chn cng ca
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FET c kt ni bn trong to thnh cc dng c hai chn, c cc mc dng khc nhau.

Ngi ta cng ch to cc ngun dng hng c kh nng thay i mc dng bng cch s dng
k thut phn cc t ng nh mch cho hnh 3.46c. Dng in chy qua dng c s to nn
mt st p trn in tr, tc l pht sinh mt in p phn cc gia cng v ngun. Tr s ca
in tr ny c hiu chnh to ra dng in hng ty yu cu ca ngi s dng. Cc
ngun dng hng bng FET thng c dng to ra ngun dng cho cc mch khuych i
vi sai, chng hn nh mch hnh 3.47.
e) FET nh mt in tr c iu khin bng in p.
T h c tuyn ra (c tuyn dng mng) ca FET, r rng l: i vi cc gi tr nh ca in
p mng-ngun, cc FET c c tnh c m t nh mt in tr thun [ohmic], bi v dng
mng tng mt cch tuyn tnh theo in p mng. Gi tr ca in tr hiu dng (tng ng vi
dc ca cc c tuyn ra) c iu khin bng in p cng. iu ny cho php FET c
s dng nh mt in tr c iu khin bng in p (VCR) [voltage controlled resistance].
Cc gi tr in tr c th c to ra s thay i t mt vi chc [ohm] (hoc thp hn i
vi FET cng sut) ln n mt vi G (1 G = 1000 M).
ng dng thng thng ca mch ny trong phm vi cc mch iu khin h s khuych i t
ng [automatic gain control circuits]. Khi in p iu khin in tr c ly t mch phn
p vi mt in tr c nh to thnh mt b suy gim c iu khin bng in p [voltage
controlled attenuator] nh mch cho hnh 3.48.
Mch suy gim c dng trong ng hi tip m ca
b khuych i lm thay i h s khuych i ca
mch. in p cung cp cho FET iu khin in tr
ca mch suy gim l c trch t tn hiu ra ca mch
khuych i v c b tr sao cho nu bin in p ra
tng, th lng hi tip m tng, dn n lm gim h s
khuych i ca b khuych i. iu ny cho php duy
tr bin ra ti mt gi tr khng i no c lp vi
bin ca tn hiu vo. K thut ny thng c s
dng, v d nh: gi m lng ca mt my thu radio
khng i, ngay khi cng ca tn hiu radio lun
thay i.
Mt ng dng khc ca cc b suy gim c iu khin
bng in p l trong vic ch to cc b dao ng, m
trong mch iu khin h s khuych i t ng
dng n nh h s khuych i ca b dao ng m
khng lm mo dng tn hiu ra.
Cc mch suy gim c iu khin bng in p c th c s dng vi cc tn hiu vo DC
hay AC, do FET l dng c c tnh i xng trong nguyn tc lm vic ca n (mc d c tnh
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ca cc FET i vi cc tn hiu vo c cc tnh khc nhau thng rt khc nhau), nhng
trnh gy mo dng th bin ca tn hiu vo cn phi c hn ch mt vi chc milivolts.
g) FET nh mt chuyn mch tng t.
Bng cch t mt in p thch hp n cc cng ca FET, ta c th bin i in tr mng-
ngun hiu dng t vi chc ohm hay thp hn (ngn mch mt cch hiu dng trong nhiu ng
dng) n mt gi tr cao, tc l c th xem mch hu nh l h mch. in tr ca FET hai
trng thi nh trn c gi l in tr dn [ON resistance] v in tr ngng [OFF resistance].
Kh nng chuyn dng c t Dn [ON] sang Ngng [OFF] theo phng php ny s cho
php FET c s dng nh mt chuyn
mch, nh hnh 3.49.
Hnh 3.49a l chuyn mch ni tip
dng JFET. MOSFET c th c s
dng theo cch tng t. Khi FET c
chuyn sang Dn [ON] th in tr gia
li vo v li ra ca mch rt nh, bng
in tr ON ca FET, dng c c xem
nh ngn mch. Khi FET chuyn sang
Ngng [OFF] th in tr gia li vo v
li ra ca mch s bng vi in tr OFF
ca FET.
Do c nhiu khong gi tr khc nhau gia in tr ON v OFF, nn FET thng c dng nh
mt chuyn mch rt hiu qu.
Hnh 3.49b m t FET c s dng mch song song. y in tr ni tip R c chn ln
so vi R
ON
, v nh so vi R
OFF
. B phn p s to nn mt in p ra gn bng V
i
khi dng c
chuyn sang OFF, v gn bng khng khi dng c chuyn sang ON.
Khi dng FET nh cc chuyn mch tng t, cn phi m bo cc iu kin lm vic thch
hp cho dng c. Ch yu m bo khng c vt qu in p nh thng ca cng, nhng
cng cn phi m bo in p thch hp cng dng c lm vic theo c hai trng thi: Dn
hon ton hoc Ngng hon ton. i vi MOSFET knh-n, th cng c th ly in p dng
ln hn chuyn dng c sang Dn [ON], v phi c in p
m so vi in p vo chuyn dng c sang Ngng [OFF].
i vi JFET trng thi hi khc vi MOSFET, c bit khi s
dng cc mch ni tip, v tip gip cng ca JFET cn phi
khng c phn cc thun. Mch dng cho JFET cho hnh
3.50. Khi in p chuyn mch V
S
dng hn so vi in p
vo V
i
th diode s c phn cc ngc v in p cng s
bng vi V
i
do in tr R, s chuyn FET sang ON. Nu V
S
c
gi tr m th diode s dn v a in p m vo cng so vi
ngun v chuyn FET v OFF.
h) FET nh mt chuyn mch s.
Ngoi ng dng FET lm chuyn mch tng t, cc FET
(ring cc MOSFET) c s dng rng ri trong cc ng
dng s. Trong , cc mch thng theo hai trng thi hay
nh phn [binary], trong cc mch s, tt c cc tn hiu u
c quy v mt trong hai di in p, mt di in p biu din trng thi th nht (v d trng
thi ON), v di in p khc biu din trng thi th hai (v d trng thi OFF). Cc khong
in p ny thng c xem nh mc logic 1 v logic 0. Trong cc mch dng MOSFET
th thng i vi cc mc in p gn bng 0 s tng ng vi mt mc logic 0, v i vi
cc in p gn bng in p dng ca ngun cung cp s tng ng vi mc logic 1.
Mt mch logic n gin nht l b o logic [logical inverter] cn cho vic to ra mt in p
tng ng vi mc logic 1 nu u vo tng ng vi mc logic 0, v ngc li. Mch o n
gin thc hin chc nng ny cho hnh 3.51a. Mch s dng mt MOSFET tng cng
knh-n v mt in tr. Khi c dng nh mt mch o logic, th in p vo s thay i theo
c hai hng: gn bng 0 (mc logic 0) hoc gn bng in p ngun V
DD
(mc logic 1). Khi
in p vo gn bng 0 V, th MOSFET tng cng s c chuyn v ngng dn [OFF] (v
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dng c cn phi c in p dng t trn cng to ra knh dn gia vng mng v vng
ngun), v vy dng mng l khng ng k, tc l khng c st p trn in tr R, do in
p ra gn bng vi in p ngun cung cp
V
DD
(mc logic 1). Khi in p vo gn
bng vi in p ngun cung cp, th
MOSFET s c chuyn sang dn [ON]
v c dng chy qua in tr R, in p ra
gim gn bng vi mc t chung (mc
logic 0). Nh vy, khi in p li vo cao
th s c in p li ra thp v ngc li
nn mch c chc nng ca mt b o.
Mch hnh 3.51a hon ton c th thc
hin vi cc linh kin ri nhng t c
dng trong cc vi mch (IC). Mt trong
nhng l do gii thch ti sao cc MOSFET c s dng rng ri trong cc vi mch s l do
mi MOSFET ch cn mt din tch rt nh trn phin Silicon, nn cho php ch to mt s
lng ln cc dng c trn mt chp n. Ngc li cc in tr thng chim mt t l din
tch ln hn nhiu. Do vy, khi ch to cc mch o logic bng MOSFET ngi ta thng s
dng mch nh hnh 3.51b. Trong , mt MOSFET th hai c dng nh mt ti tch cc,
lm gim nhiu din tch vng Silicon cn thit ch to cc mch o trong cc vi mch.
Tng t, cng c th ch to cc mch o bng MOSFET tng cng knh-p c dng ri v
dng vi mch nh trn.
i) Cc mch CMOS.
Trong cc mch NMOS v PMOS c gii thiu trn, gi tr ca in tr ti R (hoc in tr
hiu dng ca MOSFET c dng thay vo v tr ca in tr) s nh hng n in tr ra ca
mch khi li ra mc cao, v c s tiu tn cng sut ca cng khi li ra mc thp.
Khi in p li vo thp , th chuyn mch MOSFET chuyn v ngng dn [OFF] v li ra c
y ln cao bi in tr ti R. nhn c in tr ra thp th R cn phi nh.
Khi li vo mc cao, th chuyn mch MOSFET s c chuyn sang dn [ON] v li ra c
y xung thp. Do s chuyn mch MOSFET c in tr ON thp nn in tr ra thp, lm cho
mch ht mc dng cao t ti ngoi. Trong trng hp ny hu nh ton b in p ngun cung
cp c t trn in tr ti R to ra mt dng ln v v vy s tiu tn cng sut ln. ti
thiu ha cng sut tiu tn ny th in tr ti cn phi ln.
R rng l cc i hi in tr ra thp v tiu tn cng sut thp l cc yu cu i lp nhau trn
gi tr ca R. Vn ny c th c khc phc bng cch s dng mch nh hnh 3.52.
Trong c hai transistor NMOS v PMOS c ghp thnh mt mch m by gi c m t
nh mch MOSFET b ph [Complementary MOS] hay mch logic CMOS. Khi in p vo
gn bng 0, th dng c knh-n T2 s c chuyn v ngng dn [OFF] nhng dng c knh-p
T1 c chuyn sang dn [ON]. Khi in p li vo gn bng vi mc in p ngun cung cp
th v tr c o ngc, vi T1 ngng [OFF] v T2 dn [ON]. Nh vy, vi c hai trng thi
li vo th mt trong hai transistor s dn [ON] v transistor kia ngng [OFF].
Mch hnh 3.52a c th c tng ng bi mch hnh 3.52b. Vi chuyn mch T1 kn v
T2 h, th li ra s c y ln mc cao v in tr li ra thp, c xc nh bi in tr m-
in tr ON ca T1. Vi T2 kn v T1 h, th li ra s c y xung thp v in tr ra cng
xung thp m by gi c xc nh bi in tr ON ca T2. Trong c hai trng hp, v mt
trong hai chuyn mch c chuyn v ngt [OFF] nn ch c s cung cp dng l dng l dng
ko v bi ti. Nu ti l mt MOSFET khc loi th dng ko v s khng ng k v in tr
vo cao ca cc MOSFET. V vy, c hai trng thi in tr ra ca mch CMOS l rt thp v s
tiu tn cng sut l cc nh. Trn thc t, khi trng thi tnh, th s tiu tn cng sut thng
khng ng k. cc mch ng dng th cng sut c tiu th bi mt mch CMOS c xc
nh bng mt lng nh dng in chy qua khi cc dng c chuyn mch t trng thi ny
sang trng thi khc. Trong mt khong thi gian ngn, c hai transistor u dn, to ra mt
ngn mch t ngt t ngun cung cp n t chung. Do tiu th cng sut thp, nn cc mch
CMOS c s dng rng ri trong cc ng dng lm vic bi ngun cung cp bng pin. Vn
ny s c tho lun trong cc gio trnh khc.
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