BI 1: MCH XN, MCH GHIM IN P I.

Mc ch yu cu: Kho st hot ng ca mch xn, mch ghim in p dng diode, cp sng vo v kho st dng sng ra sau khi b xn hoc ghim. II. Tm tt l thuyt: 1. Mch xn: - Mch xn c nhim v ch cho mt phn tn hiu ng vo a n ng ra. - Trong bi th nghim ny ta thc hin mch xn dng diode mc theo kiu song song, c xn trn, xn di, v xn hai mc. S mch xn mc kiu song song :
R R

+
D

+
R t

+
D

+
R t

Vin
Ec

Vout

Vin
Ec

Vout

Ec 0

Mch xn mc trn

Mch xn mc di

- Coi diode D l l tng, VD = 0V - i vi mch xn trn, khi V in < Ec th diode cha c phn cc thun, ton b V in c a ra Vout, khi Vin > Ec th diode c phn cc thun, in p ra Vout = Ec, ta ni tn hiu b xn mc Ec. khi tn hiu vo l sng sin th dng sng ra c dng:

v
Ec

Vin t Vout

- i vi mch xn di, khi V in > Ec th diode cha c phn cc thun, ton b Vin c a ra Vout, khi Vin < Ec th diode c phn cc thun, in p ra Vout = Ec, ta ni tn hiu b xn mc Ec. Khi tn hiu vo l sng sin th dng sng ra c dng:

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Vout

t - Ec Vin

Kt hp hai mch xn trn v di ta c mch xn hai mc

R

+
D 1 D 2

Vin
V1 V2

Vout -

R t

V V1 Vout

t - V2 Vin

2. Mch ghim: - Mch ghim in p l mch khi phc thnh phn mt chiu ca tn hiu. N c dng n nh nn hoc nh ca tn hiu, mt mc xc nh no . - C hai loi mch ghim c bn l mch ghim nh trn v mch ghim nh di
C C

+
D

+ Vout
Ec

+
D

+ Vout
Ec

Vin -

Vin -

Mch ghim nh trn

- Coi diode nh l tng, VD = 0V

Mch ghim nh di

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- i vi mch ghim nh trn: Khi Vin tng t 0 n Vp(gi tr nh), th t C c np n gi tr VC = Vp Ec, diode D dn, Vout = Ec. Khi Vin gim t Vp v 0, in p t ln hai cc diode l V in VC Ec m VC = Vp Ec => VD = Vin Vp, vy VD < 0 diode D tt, Vout = Vin VC, do Vout gim t Ec v (- Vp + Ec). Khi Vin gim t 0 v - Vp, diode D vn phn cc ngc, t C vn cha x, Vout = Vin VC gim t (- Vp + Ec) v (- 2Vp + Ec). Khi Vin tng t - Vp n 0, th Vout tng t (- 2Vp + Ec) n (- Vp + Ec).
C

+
D

+ Vout
Ec

Vin -

Vp Ec

Vin

Ec - Vp + Ec

Vout

i vi mch ghim nh di(gii thch tng t), c dng sng vo ra:

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+
D

+ Vout
Ec

Vin -

Vp

Vin

- Ec

2Vp Ec Vp Ec Ec

Vout

Ta c th thay i Ec ghim cc mc mong mun. III. Dng c th nghim 1 FACET Base Unit. ( lp mch th nghim). 1 SEMICONDUCTOR FUNDAMENTAL circuit board. 1 VOM. 1 Dao ng k. 1 My to sng. Cc dy ni v cc connector. VI. Tin hnh th nghim 1. kho st mch xn s mch xn trn

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V 0.6V

Dng my to sng, cp sng sin 20Vp-p, tn s 1kHz, iu chnh ngun dng trn Base unit a V1 v 0V. Dng knh 2 ca dao ng k, o dng sng trn 2 u in tr R2 th thu c sng sin b xn mc trn

0.6V l in p phn cc thun ca diode CR1. khi p vo vt qu 0.6V th diode dn, ghim mc p ra 0.6V. S mch xn di

- Lm tng t cc bc nh trn. - Thu c dng sng ra 2 u R2 l sng sin b xn mc di

V

-0.6V

khi p vo nh hn - 0.6V th diode dn, ghim mc p ra - 0.6V. s mch xn 2 mc

- Quan st dng sng, ta thy dng sng ra c dng sng vung, 0.6Vp-p

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V -0.6V t -0.6V

khi p vo nh hn - 0.6V th diode CR2 dn, ghim mc p ra - 0.6V, khi p vo ln hn 0.6V th diode CR1 dn, ghim mc p ra 0.6V. - iu chnh V1 = 2V, V2 = 0V th mc xn trn tng ln 2.6 V - iu chnh V1 = 0V, V2 = -2V th mc xn di gim xung 2.6 V 2. kho st mch ghim: S mch ghim nh trn

V1 v 0V. Dng knh 2 ca dao ng k, o dng sng ra thu c in p ghim nh trn mc 0,6V
V 0.6V t

Dng my to sng, cp sng vung 10Vp-p, tn s 1kHz, iu chnh ngun dng trn Base unit a

-9.4V

iu chnh V1 = 3V, th thu c in p ghim nh trn mc 3.6V

S mch ghim nh di

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Dng my to sng, cp sng vung 10Vp-p, tn s 1kHz, iu chnh ngun dng trn Base unit a V2 v 0V. Dng knh 2 ca dao ng k, o dng sng ra thu c in p ghim nh di mc - 0,6V.
9.4V

- 0.6V

iu chnh V1 = -2V, th thu c in p ghim nh trn mc -2.6V

BI 2: KHO ST MCH TCH PHN V MCH VI PHN DNG OP-AMP I. Mc ch yu cu: Kho st mch tch phn v mch vi phn dng op-amp, kim tra dng sng vo ra ca mch vi phn, tch phn. II. Tm tt l thuyt Mch tch phn v mch vi phn l nhng mch lm thay i dng sng vo.

1. Mch tch phn - Mch tch phn th ng (ch bao gm cc phn t th ng): in p ra l in p ly trn t, do t l vi XC. Nhng XC= 1/j2fC. Do khi f tng th XC gim, Vo gim; khi f gim th XC tng, Vo tng. Mch tch phn lm chc nng mch lc thng thp. - Gi s sng vo l sng vung c rng xung l PW: Khi RC> PW: xung vo kt thc trc khi t np y, xung ra l xung tam gic

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Khi RC PW: thi gian np ca t xp x thi gian tn ti xung, xung ra l xung rng ca Khi RC< PW: t np y trc khi xung vo kt thc, xung ra l xung vung - Khi mc thm opamp vo mch nh sau ta c mch tch phn tch cc:

- i vi tn hiu tn s thp hoc tn hiu mt chiu, X C0, t CF c th b qua, mch hot ng nh l mt mch khuych i o, do lch pha gia ng ra v ng vo l 1800. p ng tn s ca mch:

2.Mch vi phn: - Mch vi phn th ng (gm cc phn t th ng): in p ng ra ly trn in tr R, V o t l nghch vi XC ca mch. M XC= 1/j2fC. Do khi f tng, Vo tng; khi f gim, Vo gim. - Gi s sng vo l sng vung c rng xung l PW: Khi RC< PW: t np y trc khi xung vo kt thc, xung ra l xung nhn Khi RC PW: thi gian np ca t xp x vi thi gian tn ti xung vo, xung ra l xung rng ca Khi RC> PW: xung vo kt thc trc khi t np y, xung ra l xung vung

- Khi mc thm opamp vo mch nh sau ta c mch vi phn tch cc:

- i vi tn hiu tn s cao, X C. t CF c th b qua, mch hot ng nh l mt mch khuych i o, do lch pha gia ng ra v ng vo l 1800.

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p ng tn s ca mch:

III. Dng c th nghim 1 FACET Base Unit. 1 OPERATIONAL AMPLIFIER APPLICATIONS circuit board. 1 VOM. 1 Dao ng k. 1 My to sng. Cc dy ni v cc connector. VI. Tin hnh th nghim 1.Mch tch phn Mch th nghim:

- Tn s ct fc ca mch (ti XC1=R3): fc=1/2R3C1= 159.5 Hz - t knh 1 ca my hin sng vo u vo ca mch, knh 2 vo u ra. - Cp ngun tn hiu sng sin 1Vp-p tn s 20Hz. - T dng sng ra ta c: li : Gain=R3/R1= 10 . lch pha gia in p ra v in p vo l 1800 . Mch lm vic nh mt mch khuch i o.

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- Tng tn s ca sng vo ln 2 kHz, v quan st tn hiu ra knh 2: li in p gim i. Mch lm vic nh mt mch lc thng thp. lch pha 2700

Vin

Vout

t
Lch pha 270o

- i sng sin u vo thnh sng vung. Dng sng vo ra nh sau:

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V Vin

t V Vout t

Mch lm vic trong vng tch phn 2. Mch vi phn Mch th nghim:

- Tn s ct ca mch ( ti XC1=R1): fc=1/2R1C1 = 15.9 kHz - t knh 1 ca my hin sng vo u vo ca mch, knh 2 vo u ra. - Cp ngun tn hiu sng vung 1Vp-p tn s 100Hz. Dng sng vo ra
V

Vin

t V

Vout
t

i sng vung thnh sng sin. Dng sng ng ra:

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Vin

Vout t

Lch pha 90o

lch pha: 90o. Gain <1 Tng tn s sng vo ln 10 kHz: lch pha : 180o. Gain=10

Tng tn s sng vo ln 50 kHz: lch pha tng, khi gim tn s xung li th bin sng ra gim Mch vi phn lm vic nh mt chc nng l mch lc thng cao. i sng ng vo thnh sng tam gic 0.3V p-p, tn s 500Hz. Sng ng ra:

V
Mc mch vi phn v tch phn nh hnh v:

Vin

V Vo
utut

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Cp sng vung 1V nh-nh, tn s 2kHz. Dng sng ng ra mch tch phn l sng tam gic, v dng sng ra mch vi phn l xp x sng vung. Vy, mch vi phn v mch tch phn c chc nng tri ngc nhau.

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BI 3: MCH DAO NG TCH THOT DNG UJT I. Mc ch yu cu: Kho st hot ng ca mch dao ng tch thot dng UJT, kim tra dng sng ti cc chn ca UJT. II. Tm tt l thuyt: UJT c cu trc ch c mt tip gip PN, mc d UJT khng phi l linh kin 4 lp nhng vn c cng nhn l mt thnh phn ca h SCR v c tnh chuyn mch ca n. UJT c dng trong cc mch nh l : cc b dao ng, cc mch kch khi, b dao ng to sng rng ca, mch iu khin pha, b nh thi. K hiu v cu to bn trong ca mt UJT :

Phn bn dn N c c tnh in tr c th coi nh hai in tr ni tip, phn tip xc PN c th coi nh mt diode, nh s sau :

RB2 RB1

Khi IE = 0 (mch emitter h) in tr ca thanh bn dn c hng ngn Ohm, dng

qua B1B2 rt nh. Khi VE t n gi tr Vp , dng IE xut hin, tip gip PN c phn cc thun. Sau khi dn, UJT hot ng trong vng in tr m, VE gim trong khi IE vn tip tc tng. Khi VE gim n VV thi dng tng nhanh, UJT hot ng trong vng bo ha. Vp = VBB + VD VD : in p ngng diode : t s dng ni ti

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VE Vp
Vng ngt Vng in tr m Vng bo ha

Vv IE
UJT c s dng trong mch l 2N2646 c nm trong khong 0.56 n 0.75 Khi m Ve b hn Vp th lc dng Ie l rt nh, khi Ve t n gi tr ca Vp th lc dng Ie s bt u tng ln v mch chuyn sang hot ng trong vng qu , lc ny I tng trong kho p gim, ngi ta gi y l vng in tr m. Khi V gim n gi tr ca Vv th lc dng s tng ln mnh, ngi ta gi y l vng nh thng ca mch. c tuyn lm vic ca mch nh hnh v trn III. Dng c th nghim 1 FACET Base Unit. ( lp mch th nghim). 1 FET Fundamental circuit board (Board mch th nghim). 1 VOM. 1 Dao ng k. Cc dy ni v cc connector VI. Tin hnh th nghim Mc mch nh hnh v

Cp ngun VBB cho mch l 10Vdc

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o dng sng ti cc chn E, B1, B2 thu c kt qu :

Khi mi cp ngun, UJT cha c kch khi nn tt, t C2 np thng qua R1 lm in p VE ln n p nh ca UJT (Vp), khi xut hin dng chy qua cc E ca UJT. Lc ny UJT dn, t C x theo ng E, B1 v R3.

(VE ) VP

VV t (VB2 )

t (VB1 )

t
Gii thch: - Khi mi cp ngun, UJT cha c kch khi nn tt, t C2 np thng qua R1 lm in p VE ln n p nh ca UJT (Vp), khi xut hin dng chy qua cc E ca UJT. Lc ny UJT dn, t C x theo ng E, B1 v R3. - Khi UJT ang hot ng trong vng in tr m, in tr RB1 gim, dng qua R2 tng ln to st p v cc B2 c xung m ra. ng thi cng to st p trn R3 v cc B1 c xung dng ra. - V gi tr R3 = 10 << R1 = 10 k nn thi gian x ca C2 nh hn rt nhiu so vi thi gian np.

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