Chng 2 Linh kin in t cng sut

Chng 2. Linh kin in t cng sut

1. 2. 3. 4. 5. 6. 7. diode cng sut Transistor lng cc (BJT) Transistor trng (JET, MOSFET) Thrysistor (SCR) Triac Cng tc t tnh Transistor cc ca cch li (IGBT)

1.Diode cng sut

2.1. diode cng sut 2.1.1 Nguyn l cu to

Gm hai cht bn dn p,n mt tip gip J UAK>0 c dng in IAK#0 UAK<0 khng dng IAK S cu trc

J p n

Cu trc p-n
Phn cc cho p-n
p n p n

Etx a)

Engoi
+

Etx b)

Engoi

Etx
+

c)

2.1.2. c tnh, thng s ca diode

c tnh nh hnh v 2.2 - gc phn t th nht: dng in ln, st p nh - gc phn t th ba: dng r nh, in p ngc ln c tnh I
ILV + -

UN U U0 +

Hnh 2.2

Thng s: Im dng in nh mc, hin nay dng in ln nht ca mt diode cng sut ti 7000A U st p thun; St p ca diode trong khong (0,7 - 2)V P tn hao cng sut; P = U.I (n hng kW) Tcp- nhit lm vic cho php; Ti lp tip gip khong 2000C UN - in p ngc; Trong khong (50-4000)V Ir dng in r, hng trm mA

Kt cu c dng nh hnh v

Kim tra s b
Dng ng h vn nng o
0 0

Rx100 _ a) en _

Rx100 en

+ b)

2.Transistor lng cc BJT

2.2. Transistor lng cc BJT (Bipolar Junction Transistor) 1. Nguyn l, cu to. 2. c tnh, thng s 3. c im cu to 4. S Darlington

2.2.1. Nguyn l cu to BJT

Cu to ca Transistor c dng nh hnh v
C Emit p n p Colect B E c) C n p n Baz b) d) Colect B E f) E C E C

Baz Emit a)

B e)

Hot ng
m t hot ng ca Transistor, ta ly Transistor li Dng ht pnp lm v d.ht Dng
a s E p n B a. Dng ht a s E IE p IB n B p C E p Vng ngho Dng ht thiu s p C IC thiu s n B b. p C

Vng ngho

c. Hnh 2.1 Nguyn l hot ng ca Transistor

Trn hnh 2.1a, khi tip gip colector khng c phn cc, tip gip emitor c phn cc thun. rng vng in tch khng gian gia p v n (cn gi l vng ngho) s b gim, mc gim tu theo in p phn cc, kt qu l dng ca cc ht a s (cc l trng) khuch tn t min bn dn p (cc E) sang min bn dn n (cc B). Khi tip gip emitor khng c phn cc, tip gip colector phn cc ngc, khng c dng ca cc ht a s (in t bn dn n) ch c dng ca cc ht thiu s (l trng bn dn n) (hnh 2.1 b).

Trng hp tip gip emitor phn cc thun, tip gip colector phn cc ngc (hnh 2.1c). Khi tip gip emitor phn cc thun, cc ht a s khuch tn qua tip gip ti min baz ta nn dng IE. Ti min baz cc ht a s ny li chuyn thnh cc ht thiu s, mt phn b ti hp vi cc in t to thnh dng IB, phn cn li do rng ca min baz rt mng, tip gip colector phn cc ngc nn cc l trng min baz b cun sang min colector ta ln dng Ic. Dng Ic ny c to bi hai thnh phn: dng ca cc ht a s t min emitor, v dng ca cc ht thiu s (l trng min baz khi cha c s khuch tn t emitor sang).

2.2.2. c im kt cu
Dng in iu khin Ib c xc nh Ib = IC/ Trong in t cng sut, dng in ln nn Transistor lm vic ch ng ct nn khi m phi tho mn iu kin: Ib = kbh. IC/ (kbh = 1,2 1,5 - h s bo ho), in p bo ho CE khong 1-1,5 V Ib = IC/ Do cn h s khuch i ln nn BJT thng cu to dng darlington

S cu trc BJT
Thm mt lp bn dn n- l vng c tr khng cao
B E B E

p pp C

n nn C

Hot ng
p - n- l vng c tr khng cao, d Transistor c in p cao hay thp ph thuc dy min n ch bo ho, dng in Ib ln, cc in t c a tha vo vng p, cc in tch trung gian khng trung ho ht vng baz c in tr nh c dng in chy qua. Do tc trung ho in tch khng kp, Transistor khng cn kh nng khng ch dng in.

2.2.3. c tnh ca BJT

c tnh tnh ca BJT c tnh iu khin nh hnh bn Mt s nhn xt: Cng mt IC mun c UCE nh th IB phi lnIC H s khuch i ca Transistorcng sut nh (c hng chc

IC =IC/ IB IB

UCE=200V UCE=20V UCE=5V

UCE=0,5V UCE=0,2V IB

c tnh ra
UCB0 - in p nh thng CB khi h E UCE0 - in p nh thng CE khi h B
IC IB tng IB=0 H Emit UCE
UCT UCB0UCE0

c tnh ng ct
c tnh in hnh
Un CBC ub B C uBE ub

E i B CBE uCE

iC 1 2 3 4 5 6 7 8

c tnh ng ct in hnh c th chia thnh 8 vng :

1. Tran. ang kho 2. Thi gian tr ca Tran. khi m 3. Qu trnh tng dng IC do s tch lu in tch trong baz 4. Vo vng bo ho 5. Ch lm vic bo ho 6. Thi gian tr khi kho, do mt in tch ln khng gim nhanh c. 7. Dng colector gim v 0 8. T BE c np vi -UBE m bo cho Transistorkho 9. Transistorkho hon ton

Thng s
Cc thng s c bn IC dng in nh mc, ( ti 1000A) - h s khuch i dng in IB = IC/ dng in baz mA U st p thun; (khong (0,7 - 2)V) P tn hao cng sut sinh nhit (n hng kW) Tcp- nhit lm vic cho php; Ti lp tip gip khong 2000C UCE - in p CE; Trong khong (50-1500)V UBE - in p BE; hng vn

2.2.4. S darlington
T c tnh tnh trn thy rng h s khuch i dng in ca cc tran. cng sut nh ch khong hng chc. Do cn mc hai tran. ni tip nhau nh hnh v iC1 iC H s khuch ai: iC2 = 1 + 2 + 1 2 iB = iB1 = 1 2
iE1 = iB2

n nh im lm vic
Khi c xt dng in r iC = iC1+iC2= 1iB1 + ICEO1+ 2iB2 + ICEO2 = (1 + 2 + 1 2)iB1+(1+ 2)ICEO1+ICEO2 Khi nhit thay i dng r thay i, n c nhn thm (1+ 2)ICEO1 lm s km n nh theo nhit khc phc, a thm cc in tr nh hnh v

Mch vo c phn thnh hai nhnh iB1 = iB-UBE1/R1; iB2=iE1+UBE1/R1- UBE2/R2 Sau bin i c: iC = iC1+iC2= 1iB1 + ICEO1+ 2iB2 + ICEO2 = (1 + 2 + 1 2)iB+(1+ 2)(ICEO1- 1 UBE1/R1) +(ICEO2- 1 UBE2/R2) i i
C1 C

iB

iB1
R1

iC2 iB2
R2

Mt s hnh nh BJT

3. Transistor Trng (FET)

2.3. Transistor TRNG (FET)

2.3.1. Gii thiu chung 2.3.2. Cu to v c tnh ca JFET 2.3.3 MOSFET

2.3.1. Gii thiu chung

Khc vi Transistor lng cc m c im ch yu l dng in trong chng do c hai loi ht dn (in t v l trng) to nn, Transistor trng (Field Effect Transistor FET), hot ng da trn nguyn l hiu ng trng, dn in ca n tinh th bn dn c iu khin nh tc dng ca mt in trng ngoi. Dng in trong FET ch do mt loi ht dn to nn.

Transistor hiu ng trng FET gm c hai loi chnh: FET iu khin bng cc ca tip xc p-n (vit tt l JFET). FET c cc ca cch ly: Thng thng lp cch in l lp xt nn gi l Metal oxide Semiconductor FET (MOSFET hay MOS).
Trong loi Transistor trng c cc ca cch in li c chia lm hai loi l MOS c knh lin tc (knh t sn) v MOS c knh gin on (knh cm ng).

2.3.2. Cu to v c tnh ca JFET

1. Cu to v k hiu
Vng ngho G D Vng ngho G D IDS UDS p N UGS S a. S b. p Vng ngho G D IDS UDS p N S c. p

n p

Hnh 2.2b

2. Hot ng
Xt JFET knh N c cc D ni vi dng ngun, S ni vi m ngun nh hnh 2.2b. a. Khi cc G h (UGS = 0V) Lc ny dng in s i qua knh theo chiu t cc dng ca ngun vo cc D v ra cc S tr v m ngun ca UDS, knh c tc dng nh mt in tr b. Khi cc G c in p m (UGS<0V) hnh 2.2c Khi cc G c in p m ni vo cht bn dn loi P, s lm cho tip gip P - N b phn cc ngc, in t trong cht bn dn ca knh N b y vo lm thu hp tit din knh, nn in tr knh dn tng ln, dng ID gim xung.

2.3.3 MOSFET
MOSFET c chia lm hai loi: MOSFET knh lin tc v MOSFET knh gin on. Mi loi knh lin tc hay gin on u c phn loi theo cht bn dn l knh N hay P. Ta xt cc loi MOSFET knh N v suy ra cu to ngc li cho knh P.

1. Cu to v k hiu ca MOSFET knh lin tc

Cu to
UDS UGS cc mng D cc cng G SiO2 knh N N N nn P N G a. b. G D

S D

cc ngun S

c tnh
ID(mA) 10,9 8 4 2 UGS -6 UP -3 -2 0 UP/2 0,3UP IDSS IDSS/2 IDSS/4 0 ID UGS=+1V UGS= 0V UGS= -1V UGS= -2V UGS= UP/2= 3V UDS

2. Cu to v k hiu ca MOSFET knh gin on Cu to

cc mng D UDS UGS
SiO2 N nn P p N G a) b) S knh N

D G S D

cc cng G

cc ngun S

Hot ng
Khi phn cc cho G c UGS>0V, cc in tch dng cc G s ht cc in t ca nn P v pha gia ca hai vng bn dn N v khi lc ht ln th s in t b ht nhiu hn, ni lin hai vng bn dn N v knh dn c hnh thnh. Khi c dng in ID i t D sang S, in p phn cc cho cc G cng tng th dng ID cng ln. in p UGS ln to thnh knh dn in gi l in p ngng UGS(T) hay UT. Khi UGS<UT th dng cc mng ID = 0

c tnh
ID(mA) ID UGS = 7V UGS = 6V UGS = 5V UGS = 4V UGS = 3V 0 UGS c) 0 UDS

Mt s hnh nh Transistor FET

4. Thryristor (SCR)

2.4. Thryristor (SCR)

1. 2. 3. 4. 5. 6. Nguyn l cu to c tnh, thng s Kt cu M Thyristor Kha Thyristor Kim tra

2.4.1. Nguyn l cu to
Cu to p - n ca J1 Thyristor
A J2 J3 K

p
1

n
1

p
2

n
2

Cu to t bn cht bn dn t lin tip nhau. Nu t in p ngoi vo trong cc tip gip trn c mt tip gip ngc UAK>0 c J2 ngc UAK<0 c J1, J3 ngc C hai trng hp ny u khng dng in. Mun c dng in chy qua pn cn c dng in iu khin (xo i mt cp bn dn no )

Nguyn l lm vic loi iu khin t Anode J2 J iAK J1

3

p1 n1

p2

n2 K

iAG

a thm mt cc G (gate) vo n1 Khi c in trng UAK>0, c dng in iAG cp bn dn p1, n1 thnh dy dn, khi A coi nh c t trc tip vo p2, khi xut hin dng iAK Khi c dng iAK, dng iu khin khng cn ngha na. Cc cht bn dn p,n ch tr v trng thi ban u khi ngng dng in

a)

Nguyn l lm vic loi iu khin t Cathode i

A

J1

p1

n1

J2 J3 AK p2 n2 K _ iGK

n1

n2 K T2

a)

T1 p1

p2 G b)

c)

a thm mt cc G (gate) vo p2 Khi c in trng UAK>0, c dng in iGK cp bn dn p2, n2 thnh dy dn, khi K coi nh c t trc tip vo n1, khi xut hin dng iAK Khi c dng iAK, dng iu khin khng cn ngha na. Cc cht bn dn p,n ch tr v trng thi ban u khi ngng dng in

2.4.2. c tnh v thng s

_ + c tnh c dng nh hnh bn Thng s: IG3>IG2>IG1 > 0 2 ITG C cc thng s nh diode UN 4 U ni trn UAK UBO 3 _ Cc thng s ring ca Thyristor + ITG dng in t gi; tm, tk thi gian m, kha Thyristor, tCM = tm + tK Uk, ik - in p v dng in iu khin dU/dt, di/dt - gii hn tc bin thin in p v dng in I 1

So snh Thyristor vi cc linh kin bn dn cng sut khc u in chnh ca Thyristor l c mt dng in cao, tn hao nh Nhc im: tc chuyn mch chm, tn s lm vic thp

2.4.3. Kt cu
c im kt cu c bn ca Thyristor l dn nhit ra ngoi nhanh nht.

2.4.4. M Thyristor
nh ngha vic m Thyristor l chuyn n t trng thi khng dng in sang trng thi c dng in. iu kin c dng in chy qua Thyristor Mun c dng in chy qua Thyristor phi p ng hai iu kin: C in p UAK>0; C dng in iu khin iGK0

Trong mch in mt chiu, Thyristor c m d dng, cn trong mch xoay chiu vic m Thyristor phc tp hn do in p v dng in thng xuyn i chiu Mt s s m Thyristor trong mch xoay chiu

U1
a) U,i

U1

K Up b)

U1
U,i

MK
c) t

U,i t t

M Thyristor bng in p Anode

M Thyristor bng ngun ph

iu khin bng mch K

2.4.5. Kho Thyristor

nh ngha vic kho Thyristor l chuyn t trng thi c dng in v trng thi khng dng in (hay pn tr v trng thi ban u) iu kin kho Thyristor l phi a dng in chy qua n v 0 C th hiu v iu kin ny l t mt in p ngc trc tip trn hai u UAK<0, Thyristor c kho. Vic t in p ngc nh th khng phi khi no cng thun tin, do c mt s cch kho nh sau:

Mt s s kho Thyristor trong mch mt chiu

Trong mch in xoay chiu Thyristor t kho do dng in t ng i chiu theo in p, khi dng in bng 0 Thyristor t kho. Mt s s kho Thyristor I trong mch T mt chiu
IN a) H mch dng in b)Ngn mch Thyristor c) To dng chy ngc Thyristor vi IT +IN=0

Mt s s mch kho Thyristor bng mch in ph

T1 L C Ud D0 Id U Zd
1

T1 + L U1 D0 C Ud U1

T1 C L

Id D0 Ud Z d

T1
+ C -

L2 T1 D0 D1 Ud Id Zd U1 L T3 C +
- T2

L2 T1 Id Zd Ud U1 T3 T4 C T2 T5 D0 Id Zd Ud

T2 L

D0

U1

a.

b.

c.

L2 + T2 U1 L d. + C-

D2
+ -

D2 + C D0
+ +

T1

C D0 T3

+ Id U Zd d U1

L1 T2 T3

T1

T1 T2 T3

L1 Id Zd Ud

CU1

Zd Ud -

D2 + Id U Zd Ud 1 -

e.

f.

L2 T1 T2
+ h.

L1 W2 W1 D0

L1 T3 L1 C D0 Id Zd U U d 1 T2
-

T1 T4 D0 T3
i.

+ T1 U1

T2

Id Zd Ud

C
+

T5

g.

T1

+
C U1

A + B
L

IT IN
D0 D1 Ud Zd Id

T2

2.4.6. Kim tra s b

Bc 1: Kim tra bng ng h vn nng thang in tr o ln nht: A vi K (i u que o) c in tr A vi G (i u que o) c in tr . K vi G (i u que o) c in tr (5 20) c nh th ny c th mc Thyristor vo mch Bc 2. Kim tra iu khin Dng cc mch a, b mc 4 kim tra Thyristor

V d mch kim tra

Thyristor c mc vo li in xoay chiu nh cc hnh v di. iu kin c php mc Thyristor vo mch: 2 UN>2. U~ Khi kho K h Thyristor kho n khng sng Khi kho K ng Thyristor dn n sng 1/4 cng sut K K U~ U~ Up

2.4.7. diode Shockley (cng h c tnh

cn c SUS - SiliconUnilateral Switch)

diode Shockley c cu to bn cht bn dn nh Thyristor nhng khng c cng iu khin. Ngi ta ch to linh kin ny c nh c tnh phi tuyn gc phn t th nht nh. Linh kin ny ging diode n p l chng cho dng in chy qua khi in p vt mt I J3 J1 + ngng noJ2. Khi c dng in chy qua A K ri, p1 dioden1shockley n2 st p bng 0 c p2
UN + UBO U

Mt s hnh nh SCR

5 Triac

2.5 Triac
1. 2. 3. 4. 5. Nguyn l cu to c tnh, thng s Kt cu M Thrysistor Kim tra

2.5.1. Nguyn l cu to
Xut x cu to triac
T1 T U1 Z U1 Z

T2

U U 1

UT
i

iu khin i xng hai Thrysistor

U T

i 2

t b

iu khin mt i xng hai Thrysistor

Nguyn l cu to
Cu to triac c cc lp bn dn ghp ni tip nh hnh v v c ni ra ba chn, hai chn A1, A2 v chn iu khin (G). V nguyn l cu to, triac c th coi nh hai Thrysistor ghp song song nhng ngc chiu nhau (ghp song song ngc) nh trn hnh v
A2 N1 P
1

A2 A2 G G
N4

A2 A2 G A1 N P G N P A1 c) G A1 A2

P N G P N A1 b)

N2 N3 P2 A1 a) A1

Cc trng hp iu khin triac

Theo nguyn l hot ng ca triac nu trn, triac s c kch m cho dng in chy qua khi in p A2 v G ng du, ngha l: A 2 dng v G dng so vi A1. A2 m v G m so vi A1.
A1

A2

Ngoi ra A2 v G tri du triac cng c th kch m c: A2 dng v G m so vi A1, A1 A2 c dng in A2 m v G dng so vi A1, G khng dng in. Loi ny gi l loi iu khin tri du m Mt s nh ch to cho xut xng loi triac A2 dng v G m so vi A1, khng dng in. A2 m v G dng so vi A1 c dng in Loi ny gi l loi iu khin tri du dng

2.5.2. c tnh v thng s

c tnh Gm hai c tnh Thrysistor i xng nhau qua gc to I Thng s: I >I >I > 0 nh ca Thrysistor
G3 G2 G1

UBO 0 < IG1<IG2<IG3

2.5.3. Kt cu
Hon ton ging nh Thrysistor
A1 A2 A2 G G

A1

2.5.4. S m triac
A2 A1 A2 A1

K U~ a)

K
G

U~

Up

A2

A1

b)

U~

MK c)

2.5.5. Kim tra, phn bit triac vi Thrysistor

Bc 1: Kim tra s b ging nh kim tra Thrysistor
A1 A2 A2 G G A1

Bc 2: Kim tra iu khin bng s sau

H K n khng sng ng K: 1 - n khng sng - l Thrysistor 2 - n sng ht cng sut - l triac iu khin tri du m 3 - n sng 1/4 cng sut - l triac iu khin tri du dng
A1 Up K U~ A2

2.5.6. Diac (linh kin c cng c tnh SBS Silicon Bilateral Switch)

Diac c cu to bn dn nh triac nhng khng c cng iu khin. Ngi ta ch to linh kin ny c nh c tnh phi tuyn nh. Linh kin ny ging Diode Shockley l chng cho dng in chy qua khi in p vt mt ngng no . Diac cho dng in chy Aqua c hai chiu I
2

N N N P

UBO
N

ng dng in hnh ca diac

U
R1 AT VR U1 T DA C R2 Z U2

U2 t UC

UC UDA UDA UT

Mt s hnh nh Triac

6. Cng tc t tnh (Relay bn d

2.6. Cng tc t tnh

1. Nguyn l cu to 2. So snh u nhc im ca cng tc t tnh 3. S cho trng hp ngun ba pha 4. Phm vi ng dng in hnh

2.6.1. Nguyn l cu to
A1 D1 K

T1 R D2 A2 Z

S nguyn l bng hai Thrysistor

U1

T2

Nguyn l hot ng nh sau: Kho K h, hai Thrysistor khng iu khin u kho Kho K ng: in th A1 dng, c dng in i1 (mu ) lm cho T1 c dng in iu khin, T1 dn, c dng in ti theo chiu trn xung in th A2 dng, c dng in i2 (mu xanh) lm cho T2 c dng in iu khin, T2 dn, c dng in ti theo chiu di ln

S nguyn l bng triac

K U1

A1 R

A2 Z

Nguyn l hot ng nh sau: Kho K h, triac khng iu khin b kho Kho K ng: in th A1 dng, c dng in iu khin i1 (mu ) lm cho T dn, c dng in ti theo chiu trn xung in th A2 dng, c dng in iu khin theo chiu ngc li lm cho T dn, c dng in ti theo chiu di ln

2.6.2. So snh u nhc im ca cng tc t tnh

Cng tc t c tip im u im: n gin, tin cy An ton khi ct in C kh nng qu ti ln Tn hao sinh nhit nh Lm vic vi mi dng dng in Nhc im: C h quang nn d chy Mau hng khi nhiu bi Tn s v s ln ng ct gii hn Lc ng ct ln Cng tc t tnh u im: Khng h quang Khng b nh hng trong mi trng nhiu bi Tn s v s ln ng ct khng gii hn Nhc im: Khng an ton khi ct in Khng kh nng qu ti Tn hao sinh nhit ln Ch lm vic dng in xoay chiu

S cngtct tnh in hnh trong cng nghip

A1 A2 A1
LDR

A2

+ (3-30)V

+ (3-30)V

Loi dng diac Khi LED c dng in, diac dn, triac dn

Loi dng quang in tr Khi LED c dng in, LDR gim in tr, triac dn

2.6.3. S cho trng hp ngun ba

A B C

pha
A B C

ZA ZA ZB ZC

ZB

ZC

2.6.4. Phm vi ng dng in hnh

Trong iu kin mi trng d chy: cc m than, sn xut v kinh doanh xng du .... Trong iu kin mi trng nhiu bi: cc nh my xi mng, xay xt, bnh ko .... Khi tn s v s ln ng ct ln: iu khin nhit ca cc l nhit,

7. IGBT

2.7. Transistor lng cc cc ca cch li IGBT

Cu trc Thng s c trng Yu cu i vi mch iu khin

2.7.1. Cu trc ca IGBT

S cu trc ca IGBT
E n n p np+ C
n

E n n p

Cch in E S G D np n pn p C

V cu trc c th coi IGBT nh hai transistor. NPN, PNP v mt MOSFET

E S G D np n K hiu

pn p C S tng ng

c tnh ng ct
S th nghim
UG -Ngun iu khin CGE, CGC - T k sinh RG UG CGC D D0 Udc

CGE

Mi IGBT
iu kin IGBT dn UCE>0; UGE>Ung Khi xut hin knh dn. Nh cc in t chy qua knh dn, bm thm vo N- lm in th ca n gim, ko theo P+N- dn IC ch khc 0 khi UCE>UCEng c tnh

iC

UCE
UGE>Ung

UCE

Kha IGBT
Do dn bng ht thiu s nn thi gian kha di hn, tn s thp hn. Hai giai on kha (nh hnh v) 1. cc knh bin mt, MOS kha nhanh chng 2. Cc ht d ca Nti hp dn v iC gim chm Qu trnh kha UGE t iC t

Qu trnh kha UG t

t t t

Thng s IGBT
UCES - in p cc i CE khi GE ngn mch. UGES - in p GE cc i cho php khi CE ngn mch. IC- Dng in mt chiu cc i ICmax - Dng in nh ca colector; Pm - Cng sut tn hao cc i; TCP - Nhit cho php; IL - Dng in ti cm cc i; Ir - Dng in r UGEng - in p ngng GE