Professional Documents
Culture Documents
(1.1)
20
y e v h l hai ch s ch in t v l trng, m- khi lng hiu dng, r vector
v tr, r
eh
=|r
e
- r
h
|, c
o
v c l hng s in mi chn khng v cht bn dn. S dng
gn ng khi lng hiu dng ta gii phng trnh trn cho bn dn khi v tm
c:
(1.2)
(1.3)
H. 1.21:
21
Bn dn Kim loi
Mc li
Mc li
Vng ho tr
Vng dn
E
g
: Vng cm
i lc in t Cng thot eu
Nng lng chn khng
Cu trc vng nng lng ca kim loi v bn dn
H. 1.22: Gin cc vng nng lng ca kim loi v bn dn
22
Vng ha tr (Valence band): L vng c nng lng thp nht theo thang
nng lng, l vng m in t b lin kt mnh vi nguyn t v khng linh
ng.
Vng dn (Conduction band): Vng c mc nng lng cao nht, l vng m
in t s linh ng (nh cc in t t do) v in t vng ny s l in t
dn, c ngha l cht s c kh nng dn in khi c in t tn ti trn vng
dn. Tnh dn in tng khi mt in t trn vng dn tng.
Vng cm (Forbidden band): L vng nm gia vng ha tr v vng dn,
khng c mc nng lng no do in t khng th tn ti trn vng cm.
Nu bn dn pha tp, c th xut hin cc mc nng lng trong vng cm
(mc pha tp). Khong cch gia y vng dn v nh vng ha tr gi l
rng vng cm, hay nng lng vng cm (Band Gap). Ty theo rng vng
cm ln hay nh m cht c th l dn in hoc khng dn in.
Nh vy, tnh dn in ca cc cht rn v tnh cht ca cht bn dn c th l
gii mt cch n gin nh l thuyt vng nng lng nh sau:
23
Kim loi c vng dn v vng ha tr ph ln nhau (khng c vng cm) do
lun lun c in t trn vng dn v th m kim loi lun lun dn in.
Cc cht bn dn c vng cm c mt rng xc nh. khng tuyt i (0
o
K), mc Fermi nm gia vng cm, c ngha l tt c cc in t tn ti vng
ha tr, do cht bn dn khng dn in. Khi tng dn nhit , cc in t s
nhn c nng lng nhit (kB.T vi kB l hng s Boltzmann) nhng nng
lng ny cha in t vt qua vng cm nn in t vn vng ha tr.
Khi tng nhit n mc cao, s c mt s in t nhn c nng lng ln
hn nng lng vng cm v n s nhy ln vng dn v cht rn tr thnh dn
in. Khi nhit cng tng ln, mt in t trn vng dn s cng tng ln,
do , tnh dn in ca cht bn dn tng dn theo nhit (hay in tr sut
gim dn theo nhit ). Mt cch gn ng, c th vit s ph thuc ca in tr
cht bn dn vo nhit nh sau:
vi: R0 l hng s, Eg l rng vng cm. Ngoi ra, tnh dn ca cht bn dn
c th thay i nh cc kch thch nng lng khc, v d nh nh sng. Khi chiu
sng, cc in t s hp thu nng lng t photon, v c th nhy ln vng dn nu
nng lng ln. y chnh l nguyn nhn dn n s thay i v tnh cht ca
cht bn dn di tc dng ca nh sng (quang-bn dn).
(1.4)
24
H. 1.23: Cu trc vng nng lng ca bn dn Si (vng cm xin) v GaAs khi (Vng cm
thng)
in t
dn
L
trn
g
L
trn
g
in t
dn
25
B. 1.1: Cu trc tinh th v cu trc vng nng lng ca cc cht bn dn khi
Vt liu Cu trc tinh
th
rng vng
cm (eV)
Hng s in
mi
Hng s
mng (A
o
)
Khi lng
ring (g.cm
-3
)
C
Si
SiC
Ge
AlN
AlP
AlAs
GaN
GaP
GaAs
GaSb
InN
DI
DI
ZB
DI
W
ZB
ZB
W
ZB
ZB
ZB
W
5,50 I
1,1242 I
2,416 I
0,664 I
6,2 D
2,45 I
2,153 I
3,44 D
2,272 I
1,424 D
0,75 D
1,89 D
5,570
11,9
9,72
16,2
c =
9,14
9,8
10,06
c
||
= 10,4
c
= 9,5
11,11
13,18
15,69
-
3,5668
5,431
4,3596
5,658
a = 3,111
c = 4,981
5,4636
5,660
a = 3,5446
c = 5,158
5,4505
5,653
6,0959
a = 3,5446
c = 8,7034
3,5153
2,3290
3,166
5,323
3,255
2,401
3,760
6,095
4,138
5,318
5,6137
6,81
DI: Diamond; R: Rocksalt. W: Wurtzite; ZB: Zinc-Blend;
*
Gap Tnh ti im L; D: vng cm
thng (Direct); I: vng cm Xing (Indirect); c
||
: song song trc C; c
:
Vung gc trc C.
26
Vt liu Cu trc tinh
th
rng vng
cm (eV)
Hng s in
mi
Hng s
mng (A
o
)
Khi lng
ring (g.cm
-3
)
InP
InAs
InSb
ZnS
ZnS
ZnSe
ZnTe
CdS
CdS
CdSe
CdTe
PbS
PbSe
PbTe
ZB
ZB
ZB
ZB
W
ZB
ZB
W
ZB
W
ZB
R
R
R
1,344 D
0,354 D
0,230 D
3,68 D
3,9107 D
2,822 D
2,394 D
2,501 D
2,50 D
1,751 D
1,475 D
0,41 D
*
0,278 D
*
0,310 D
*
12,56
15, 15
16,8
8,9
c = 9,6
9,1
8,7
c = 9,38
-
c
||
= 10,16
c
= 9,29
10,2
169
210
414
5,8687
6,058
6,479
5,4102
a = 3,8226
c = 6,6205
5,668
6,104
a = 4,1362
c = 6,714
5,818
a = 4,2999
c = 7,0109
6,482
5,936
6,117
6,462
4,81
5,667
5,775
4,079
4,084
5,266
5,636
4,82
-
5,81
5,87
7,597
8,26
8,219
D: Diamond; R: Rocksalt. W: Wurtzite; ZB: Zinc-Blend;
*
Gap Tnh ti im L; D: vng cm
thng (Direct); I: vng cm Xing (Indirect); c
||
: song song trc C; c
:
Vung gc trc C.
27
Bn dn thun (Pure semiconductor or intrinsic semiconductor)
Hu ht cc cht bn dn u c cc nguyn t sp xp theo cu to tinh th.
Hai cht bn dn c dng nhiu nht trong k thut ch to linh kin in t
l Silicium v Germanium. Mi nguyn t ca hai cht ny u c 4 in t
ngoi cng kt hp vi 4 in t ca 4 nguyn t k cn to thnh 4 lin kt
ha tr. V vy tinh th Ge v Si nhit thp l cc cht cch in
H. 1.24:
28
Nu ta tng nhit tinh th, nhit nng s lm tng nng lng mt s in t
v lm gy mt s ni ha tr. Cc in t cc ni b gy ri xa nhau v c
th di chuyn d dng trong mng tinh th di tc dng ca in trng. Ti
cc ni ha tr b gy ta c cc l trng (hole). V phng din nng lng, ta
c th ni rng nhit nng lm tng nng lng cc in t trong di ha tr.
H. 1.25:
29
Khi nng lng ny ln hn nng lng ca di cm (0,7eV i vi Ge v
1,12eV i vi Si), in t c th vt di cm vo di dn in v cha li
nhng l trng (trng thi nng lng trng) trong di ha tr). Ta nhn thy s
in t trong di dn in bng s l trng trong di ha tr.
Nu ta gi n l mt in t c nng lng trong di dn in v p l mt
l trng c nng lng trong di ha tr. Ta c:n=p=ni
Ngi ta chng minh c rng:
n
i
2
= A
0
.T
3
. exp(-EG/KT)
Trong : A0 : S Avogadro=6,203.1023
T : Nhit tuyt i ( Kelvin)
K : Hng s Bolzman=8,62.10-5 eV/0K
EG : Chiu cao ca di cm.
(1.5)
30
Ta gi cht bn dn c tnh cht n = p l cht bn dn ni bm hay cht bn dn thun.
Thng thng ngi ta gp nhiu kh khn ch to cht bn dn loi ny.
H. 1.26
31
Bn dn thun (Intrinsic Semiconductor):
Mt trng thi hiu dng
2
1/2
(m
*
dos
)
3/2
(E E
c
)
1/2
N(E) =
t
2
h
3
Nng ht ti thun
n
i
= p
i
= 2(k
B
T/2th
2
)
3/2
(m
e
*
m
h
*
)
3/2
exp(-E
g
/2k
B
T)
E
Fi
=
(E
c
+ E
v
)/2 + 3/4k
B
Tln(m
h
*
/m
e
*
)
Vt liu Mt trng thi
hiu dng vng dn
(N
c
)
Mt trng thi
hiu dng vng ho
tr (N
v
)
Nng ht ti
thun (n
i
= p
i
)
Si (300K)
Ge (300K)
GaAs (300K)
2,78x10
19
cm
-3
1,04x10
19
cm
-3
4,45x10
17
cm
-3
9,84x10
18
cm
-3
6,00x10
18
cm
-3
7,72x10
19
cm
-3
1,50x10
10
cm
-3
2,33x10
13
cm
-3
1,84x10
196
cm
-3
(1.6)
(1.7)
(1.8)
32
Cht bn dn pha tp
Cht bn dn loi p (hay dng ngha ting Vit l bn dn dng) c tp cht l
cc nguyn t thuc nhm III, dn in ch yu bng cc l trng (vit tt cho
ch ting Anh positive', ngha l dng).
Cht bn dn loi n (bn dn m - Negative) c tp cht l cc nguyn t thuc
nhm V, cc nguyn t ny dng 4 electron to lin kt v mt electron lp
ngoi lin kt lng lo vi nhn, y chnh l cc electron dn chnh
C th gii thch mt cch n gin v bn dn pha tp nh vo l thuyt vng
nng lng nh sau: Khi pha tp, s xut hin cc mc pha tp nm trong vng
cm, chnh cc mc ny khin cho in t d dng chuyn ln vng dn hoc
l trng d dng di chuyn xung vng ha tr to nn tnh dn ca vt liu.
V th, ch cn pha tp vi hm lng rt nh cng lm thay i ln tnh cht
dn in ca cht bn dn.
33
Cht bn dn loi N: (N - type semiconductor)
Gi s ta pha vo Si thun nhng nguyn t thuc nhm V ca bng phn loi tun
hon nh As (Arsenic), Photpho (p), Antimony (Sb). Bn knh nguyn t ca As gn
bng bn knh nguyn t ca Si nn c th thay th mt nguyn t Si trong mng
tinh th. Bn in t ca As kt hp vi 4 in t ca Si ln cn to thnh 4 ni
ha tr, Cn d li mt in t ca As. nhit thp, tt c cc in t ca cc
ni ha tr u c nng lng trong di ha tr, tr nhng in t tha ca As
khng to ni ha tr c nng lng ED nm trong di cm v cch dy dn in
mt khang nng lng nh chng 0,05eV.
H. 1.27
34
Gi s ta tng nhit ca tinh th, mt s ni ha tr b gy, ta c nhng l trng
trong di ha tr v nhng in t trong di dn in ging nh trong trng hp
ca cc cht bn dn thun. Ngoi ra, cc in t ca As c nng lng ED cng
nhn nhit nng tr thnh nhng in t c nng lng trong di dn in. V
th ta c th coi nh hu ht cc nguyn t As u b Ion ha (v khang nng
lng gia ED v di dn in rt nh), ngha l tt c cc in t lc u c nng
lng ED u c tng nng lng tr thnh in t t do.0,05eV.
Nu ta gi N
D
l mt nhng nguyn t As pha vo
(cn gi l nhng nguyn t cho donor atom).Ta c:
n = p + N
D
Vi n - mt in t trong di dn in; p - mt l
trng trong di ha tr.
Ngi ta cng chng minh c: n.p = n
i
2
(n < p)
n
i
: mt in t hoc l trng trong cht bn dn
thun trc khi pha.
Cht bn dn nh trn c s in t trong di dn in
nhiu hn s l trng trong di ha tr gi l cht bn
dn loi N.
(1.9)
H. 1.28
35
Cht bn dn loi P: (P - type semiconductor)
Thay v pha vo Si thun mt nguyn t thuc nhm V, ta pha vo nhng nguyn t
thuc nhm III nh Indium (In), Galium (Ga), nhm (Al),... Bn knh nguyn t In
gn bng bn knh nguyn t Si nn n c th thay th mt nguyn t Si trong
mng tinh th. Ba in t ca nguyn t In kt hp vi ba in t ca ba nguyn t
Si k cn to thnh 3 ni ha tr, cn mt in t ca Si c nng lng trong di
ha tr khng to mt ni vi Indium. Gia In v Si ny ta c mt trang thi nng
lng trng c nng lng EA nm trong di cm v cch di ha tr mt khong
nng lng nh chng 0,08eV.
H. 1.29
36
Thay v pha vo Si thun mt nguyn t thuc nhm V, ta pha vo nhng nguyn t
thuc nhm III nh Indium (In), Galium (Ga), nhm (Al),... Bn knh nguyn t In gn
bng bn knh nguyn t Si nn n c th thay th mt nguyn t Si trong mng tinh th.
Ba in t ca nguyn t In kt hp vi ba in t ca ba nguyn t Si k cn to thnh
3 ni ha tr, cn mt in t ca Si c nng lng trong di ha tr khng to mt ni
vi Indium. Gia In v Si ny ta c mt trang thi nng lng trng c nng lng EA
nm trong di cm v cch di ha tr mt khong nng lng nh chng 0,08eV.
H. 1.30
37
nhit thp (T=00K), tt c cc in t u c nng lng trong di ha tr. Nu ta
tng nhit ca tinh th s c mt s in t trong di ha tr nhn nng lng v
vt di cm vo di dn in, ng thi cng c nhng in t vt di cm ln chim
ch nhng l trng c nng lng EA.
H. 1.31
38
Nu ta gi N
A
l mt nhng nguyn t In pha vo (cn c gi l nguyn t
nhn), ta cng c:
p = n + N
A
p: mt l trng trong di ha tr.
n: mt in t trong di dn in.
Ngi ta cng chng minh c:
n.p = n
i
2
(p>n)
ni l mt in t hoc l trng trong cht bn dn thun trc khi pha.
Cht bn dn nh trn c s l trng trong di ha tr nhiu hn s in t trong
di dn in c gi l cht bn dn loi P.
Nh vy, trong cht bn dn loi p, ht ti in a s l l trng v ht ti in thiu
s l in t.
(1.10)
(1.11)
39
Cht bn dn hn hp:
Ta cng c th pha vo Si thun nhng nguyn t cho v nhng nguyn t nhn
c cht bn dn hn hp. Hnh sau l s nng lng ca cht bn dn hn hp.
Trong trng hp cht bn dn hn hp, ta c:
n+N
A
= p+N
D
n.p = ni
2
Nu N
D
> N
A
=> n>p, ta c cht bn dn hn hp loi N.
Nu N
D
< N
A
=> n<p, ta c cht bn dn hn hp loi P.
(1.12)
(1.13)
H. 1.32
40
H. 1.33: Cc mc tp cht trong bn dn Si v GaAs
41
Vng thun
Vng ngoi lai
Vng lnh
Mt in t (cm
-3
)
Nhit (K)
H. 1.34: S thay i mt in t theo nhit
ca bn dn Si c nng tp cht cho (Donor)
10
15
cm
-3
H. 1.35: Mc fermi ca Si v GaAs c nng
tp 10
15
cm
-3
ph thuc vo nhit
42
H. 1.36: S ph thuc in tr sut cu Si v GaAs vo nng pha tp nhit phng
in tr sut
nng pha tp (10
15
cm
-3
43
1.3. Cc tnh cht quang,
in ca cc cht bn dn
khi
44
Bc sng (m)
Nng lng Photon (eV)
0.01 0.1 0.2 0.39 1 1.5 6 10 40 100 1000
0.3 0.77
Rt xa Xa Gn Trung bnh Xa Rt xa
Tm Xanh L cy Vng Cam
0.39 0.45 0.492 0.577 0.597 0.622 0.77
100 10 1 0.1 0.01 0.001
c hc 1.24
= = = m
v hv hv(eV)
T ngoi Nhn thy Hng ngoi
1.3.1. Cc tnh cht quang
(1.14)
45
E
2
E
1
E
2
E
2
E
2
E
1
hv
12
hv
12
hv
21
hv
12
hv
21
(ng pha)
a) Hp th
c) Pht x cng bc
b)Pht x ngu nhin
Mt ht ti iu kin cn bng nhit
H s pht x cwngx bc + H s pht x ngu nhin = H s hp th
n
2
/n
1
= exp-(E
2
-E
1
)/kT = exp- hv
12
/kT
B
21
n
2
(hv
12
) + A
21
n
2
= B
12
n
1
(hv
12
)
(1.15)
(1.16)
46
Tc pht x cng bc B
2
=
(hv
12
)
Tc pht x ngu nhin A
21
pht x cng bc vt hn hn pht x ngu nhin, mt nng lng
photon (hv
12
) phi ln. c mt ny, ngi ta dng bung cng
hng quang hc (optical resonator cavity) tng trng photon. Ta c:
Tc pht x cng bc B
21
n
2
=
x
Tc hp th B
12
n
1
pht x cng bc cc photon tri hn hp th photon, chng ta phi c
mt in t mc nng lng cao nhiu hn so vi mt in t
mc nng lng thp hn. Trng thi ny gi l trng thi o mt
(population inverse).
(1.17)
(1.18)
47
E
g
a)
b)
c)
E
t
E
v
E
c
hv
H. 1.37: Hp th quang trong cc cht bn dn a) hv = E
g
, b) hv > E
g
, v c) hv <E
g
Vng dn
Vng ho tr
48
d u(x)
u(x +Ax) - u(x) = Ax = - ou(x) Ax; where o = f (v).
dx
d u(x)
Ax = - ou(x); u(x) = u(0)exp(ox);
dx
u(x) = u
0
exp(ox); y u(x) = u
0
at x = 0 and u(W) = u(0)exp(oW);
u(x) u(x +Ax) u
0
Ax
W
u
0
u
0
exp(ox);
0 x W
H. 1.38: Hp th quang a) Bn dn khi chiu sng, b) S tt dn ca chm
phton theo hm Exp.
a)
b)
(1.18)
(1.19)
(1.20)
49
0,2 0,6 1 1,4 1,8
0,7 1 1,5 2 3
10
10
2
10
3
10
4
10
5
10
6
GaP
GaAs
InP
Ga
0,3
In
0,7
As
0,64
P
0,36
InGaAs
Si
Ge
o (cm
-1
)
H. 1.39: H s hp th ca
mt s cht bn dn
Nng lng
photon (eV)
Bc sng photon (m)
50
1.3.2. Tnh cht in
Di tc dng ca in trng, cc in t v trng l di chuyn vi vn tc trung
bnh
V
n
= n
n
E v v
p
=
p
pE
S in t v l trng di chuyn thay i theo mi thi im, v ti mi thi im c
mt s in t v l trng c sinh ra di tc dng ca nhit nng. S in t sinh
ra trong mi n v thi gian gi l n v trong khi di tc sinh to g. Nhng in t
ny c i sng trung bnh chuyn in t c th gp mt l trng c cng nng
lng v ti hp vi l trng ny. Nu gi n l mt in t, trong mt n v thi
gian s in t b n. Ngoi ra, trong cht bn dn, mt i v s ti hp l n/ s phn
b ca mt in t v l trng c th khng u, do c s khuch tn ca in
t t vng c nhiu in t sang vng c t in t.
Xt mt mu bn dn khng u c mt in t c phn b nh hnh v. Ti
mt im M trn tit din A, s in t i ngang qua tit din ny (do s khuch tn)
t l vi dn/dx, vi din tch ca in t v vi tit din A.
(1.22)
51
1.4 ng dng ca vt liu bn dn khi
52
Phm cht linh kin mong mun Cu trc vng nng lng cn c
Linh kin in t pht
cng sut cao
Linh kin in t
tn s cao
Linh kin pht sng
Lade thng tin ng di
(1,55 m, 1,3 m)
ng dng hin th
, xanh l cy, xanh bin
Pht sng ngn cho cc b nh
quang v my in
Nhn m/ghi nh nhit
Vng cm rng
(GaN, SiC,C)
Khi lng hiu dng nh, phn
cch cc valley ln (InAs, InGaAs)
Vt liu c vng cm thng
(A
III
B
V)
rng vng cm khong 0,8 eV
(InGaAsP)
rng vng cm t 1,6 3,6 eV
(AlGaAs, InGaN)
Vng cm rng
(GaN, AlN)
Vt liu vng cm hp
(InSb, HgCdTe)
53
1.5. Cng ngh ch to cc cht bn dn khi
54
Cc khu cng ngh c bn ch to vt liu bn dn
vt liu ban u
Bn dn a tinh th
Bn dn n tinh th
Phin
Si/SiO
2
GaAs/Ga, As
Chng ct v lng ng
Tng hp
Nui n tinh th Nui n tinh th
Mi, ct, nh bng Mi, ct, nh bng
55
1.5.1 Cng ngh ch to cc cht bn dn khi Si
a) Vt liu ban u:
Ct SiO
2
c t vo l nung vi cc cacbon di dng than, cok.., xy ra
phn ng:
SiC (rn) + SiO
2
(rn) Si (rn) + SiO (hi) + CO (hi)
Si to ra c cht lng luyn kim c sch khong 98%.
Bc tip theo Si c nghin nh v x l trong HCl to thnh
trichlorosilane (SiHCl)
3:
Si (rn) + 3HCl (hi) (300
o
C) SiHCl
3
+ H
2
(hi)
nhit phng (SiHCl)
3
dng lng (nhit si 32
o
C). Bng cch chng ct
c th loi mt s tp cht. Sau khi chng ct lm sch, (SiHCl)
3
cho phn ng
trong kh H
2
to thnh Si a tinh th c sch in t (EGS)
(SiHCl)
3
(hi)
+ H
2
Si (rn) + 3HCl (hi)
56
b) Phng php Czochralsski
H. 1.40: M t nguyn l nui n tinh th bng phng php Czochralsski
57
c) Phng php nng chy vng
Thanh a
tinh Si
Cun t
cao tn
n tinh
th Si
Mm Si
G
Vng
nng
chy
H. 1.41: M t nguyn l nui n tinh th bng Phng php nng chy vng
58
H. 1.42: Phin Si c ct, mi, nh bng t thi n tinh th
59
1.5.2 Cng ngh ch to cc cht bn dn khi GaAs
a) Vt liu ban u:
Ga, As: sch ho hc
Gin pha h Ga - As
200
400
600
800
1000
1200
1400
(T
1
, x) T
1
810
o
C
C
l
C
m
29,5
Pha lng Pha lng
Ga + Pha lng GaAs + As
GaAs + Ga
GaAs + Pha lng
T
b
s
x
% nguyn t As
T
o
(C)
0 10 20 30 30 50 60 70 80 90 100
H. 1.43:
60
b) Nui n tinh th GaAs:
Mm tinh th GaAs nng chy
Vng 2 Vng 1
As
600
800
1000
1200
1242 1260
o
C
610 620
o
C
T
o
(C)
Phng php Bridgman
Phng php Czochralsski (tng t nh nui tinh th Si)
H. 1.44: M t nguyn l nui n tinh GaAs th bng phng php Bridgman
61
1.6. Phn loi cc cht bn dn
62
Group IV (Elemental) Crystalline
Materials (Periodic Table, Column IV)
C (carbon)
Diamond Structure: Kim cng (diamond!!), bn dn (semiconductor)
Graphite: kim loi (metal), dng thng dng nht (most common form)
Fullerenes (buckminsterfullerene): bucky balls, nanotubes, .
Clathrates (new form ?): bn dn (semiconductor), hp cht (compounds),
recent research
Si (silicon)
Diamond Structure: bn dn (semiconductor), dng thng dng nht
(common form)
Clathrates (new form): bn dn (semiconductor), cc hp cht
(compounds), nghin cu mi (recent research)
63
Group IV Materials
Ge (germanium)
Diamond Structure: semiconductor, common form
Clathrates (new form) semiconductor, compounds, current research
Sn (tin)
Diamond Structure (gray tin or -Sn): semimetal
Body Centered Tetragonal Structure (white tin or -Sn): metal,
common form
Clathrates (new form): semiconductor, compounds, current research
Pb (lead) Face Centered Cubic Structure: metal
64
Group IV Materials
(Diamond Structure Band Gaps)
Khe nng lng gim rng vng cm (Decreasing bandgap) E
g
-
Khong cch gia cc nguyn t t ng (increasing interatomic distance)
C 6 eV
+
Si 1.1 eV
+
Ge 0.7 eV
+
Sn Bn kim loi (semimetal) 0 eV
Pb Kim loi, khng phi cu trc kim cng (metal, not
diamond structure!)
65
Cc cht bn dn n cht
(Elemental Semiconductors)
Mainly, Column IV elements
C (diamond), Si, Ge, Sn (gray tin or -Sn)
Tetrahedrally bonded in diamond crystal structure.
Each atom has 4 nearest-neighbors.
Bonding: sp
3
covalent bonds.
Also! Some Column V & Column VI elements are
semiconductors!
P, 3-fold coordinated lattice
S, Se, Te 5-fold coordinated lattices
66
III-V Compounds
(Periodic Table Columns III & V)
Column III Column V
B N
Al P
Ga As
In Sb
Tl not used Bi
BN, BP, BAs; AlN, AlP, AlAs, AlSb
GaN, GaP, GaAs, GaSb; InP, InAs, InSb,.
67
III-V Compounds
Applications: IR detectors, LEDs, switches
BN, BP, BAs; AlN, AlP, AlAs, AlSb
GaN, GaP, GaAs, GaSb; InP, InAs, InSb,.
Bandgap decreases & interatomic distance increases as we go
down the periodic table
Tetrahedral coordination! Most: zincblende crystal structure.
Some (B compounds & N compounds): wurtzite crystal
structure
Bonding: Not pure covalent! Charge separation due to valence
difference Partially ionic!
68
II-VI Compounds
(Periodic Table Columns II & VI)
Column II Column VI
Zn O
Cd S
Hg Se
Mn : sometimes Te
not used Po
ZnO, ZnS, ZnSe, ZnTe; CdS, CdSe, CdTe
HgS, HgSe, HgTe, some compounds with Mn.
69
II-VI Compounds
Applications: IR detectors, LEDs, switches
ZnO, ZnS, ZnSe, ZnTe; CdS, CdSe, CdTe
HgS, HgSe, HgTe (semimetals); compounds with Mn
Bandgap decreases & interatomic distance increases as we
go down the periodic table
Large bandgaps! Except for Hg compounds, which are
semimetals with zero gaps.
Tetrahedral coordination! Some zincblende & some
wurtzite crystal structures.
Bonding: Charge separation due to valence difference is
large.
More ionic than covalent!
70
IV-IV Compounds
(Periodic Table Column IV)
Column IV
C
Si
Ge
Sn
SiC
Other compounds: GeC, SnC, SiGe, SiSn, GeSn cannot be
made or cannot be made without species segregation or are
not semiconductors.
SiC: zincblende (semiconductor), & hexagonal close
packed (large gap insulator).
Also MANY other crystal structures!
71
IV-VI Compounds
(Periodic Table Columns IV & VI)
Column IV Column VI
C O
Si S
Ge Se
Sn Te
Pb
PbS, PbTe, PbSe, SnS
Others: SnTe, GeSe, cant be made, cant be made
without segregation, arent binary compounds, or arent
semiconductors.
72
IV-VI Compounds
Applications: IR detectors, switches
PbS, PbTe have zincblende crystal structure
Others: 6-fold coordination
~ 100% ionic bonding
Small bandgaps (IR detectors)
73
I-VII Compounds
(Periodic Table Columns IV & VI)
Mostly insulators: NaCl, CsCl,
No tetrahedral coordination! 6 or 8 fold coordination.
~ 100% ionic bonding
NaCl and CsCl crystal structures
Large bandgaps
74
Hp cht oxide (Oxide Compounds)
a s l cht in mi c rng vng cm ln (Most are
good insulators with large bandgaps)
C t cht bn dn oxide: CuO, Cu
2
O, ZnO
Cha c hiu tt (Not well understood)
C rt t ng dng (Very few applications)
Except for ZnO (ultrasonic transducer)
nhit thp mt s oxide tr thnh siu dn La
2
CuO
4
(T
c
~ 135K)
75
Mt s cht bn dn khc
(Some Other Semiconductor Materials)
Alloy mixtures of elemental materials (binary alloys):
Si
x
Ge
1-x
,... (0 x 1)
Alloy mixtures of binary compounds (ternary alloys):
Ga
1-x
Al
x
As, GaAs
1-x
P
x
, (0 x 1)
Alloy mixtures of binary compounds with mixtures on
both sublattices (quaternary alloys):
Ga
1-x
Al
x
As
1-y
P
y
, .., (0 x 1, 0 y 1)
Vary x & y varies bandgap & other properties.
BANDGAP ENGINEERING!
76
Exotic Semiconductors
Layered compounds: PbI
2
, MoS
2
, PbCl
2
,
Covalent bonding within layers
weak Van Der Waals bonding between layers
Effectively 2 dimensional solids
Electronic & vibrational properties have ~ 2 dimensional
character.
Organic semiconductors
Polyacetyline: (CH
2
)
n
Great promise for future applications
(Has been said for > 25 years!)
Not well understood
77
Other Semiconductors
Bn dn t (Magnetic semiconductors)
Cc hp cht c cha Mn & / or Eu v cc ion t khc
(& other magnetic ions)
Va c tnh cht bn dn va c tnh cht t (Both
semiconducting & magnetic)
EuS, Cd
x
Mn
1-x
Te,
Cc b bin iu quang hc (Optical modulators)
Cc cht bn dn khc (Others)
I-II-(VI)
2
& II-IV-(V)
2
compounds
AgGaS
2
, ZnSiP
2
, ., Tetrahedral bonding
Cc hp cht V
2
-(VI)
3
As
2
Se
3
.
78
Cu hi n tp chng 1:
1. Cu trc tinh th v cu trc vng nng lng ca cc cht bn
dn khi Si, A
III
B
V
v
A
II
B
VI
.
2. Tnh cht quang ca cc cht bn dn khi.
3. Tnh cht in ca cc cht bn dn khi.
4. Cc phng php ch to vt liu bn dn khi
5. Phn loi cc cht bn dn