ELECTRONICS I

1. .
2. .
3. .
4. .

30

Lab
Lab
10
Lab SPICE
10

20
50

ELECTRONICS I
1
2
3
4
----- Midterm -----

6
7

8
9

 Electronics I, II


(IC)

Electronics : An Overview

Electronics


Electrical Energy
Processing (generation,
distribution, etc)

Processing Information
in the form of electrical
signals

Energy VS Information

(electro-mechanical conversion)
1837


1879

1881

1887

(communication)

1837 1844
(
!)
1876

(transmission line)
1887

Edison VS Tesla


1.

2.
2.1
2.2 IC

EEET0210 Electronics I

Edison's Effect

.. 1883 Edison
(filament) (plate)
.. 1904 Sir John Ambrose Fleming
()

EEET0210 Electronics I

:
Plate

Grid
Filament

.. 1906 Lee De Forest

()
Grid
Plate Filament

1. - (wireless wireline)
2. - - Boolean Algebra
(vacuum tube) (electron tube)
ELECTRONICS

ENIAC 18,000
(average error-free period = 5.6 )

 (Semiconductor)

RADAR
(Diode)

 .. 1947
Bell Lab Bardeen, Brattain
Shockley

Discrete Transistor

TO-3
C

TO-92
TO-126
E C

TO-5
TO-18

EB

C
B

TO-220
E

B C
E

SONY TR-63
SONY TR-55

: 1954
: Cray 1958


(Integrated Circuit: IC)

.. 1958 Jack Kilby (Texas

Instrument) Robert Noyce (Fairchild)

Microchip ( Chip)


Kilby and Noyce

die

Integrated Circuits : Level of Integration

Scale of Integration

Number of devices

Zero Scale Integration (ZSI)

Small Scale Integration (SSI)

2-30

Medium Scale Integration (MSI)

30-103

Large Scale Integration (LSI)

103-105

Very Large Scale Integration (VLSI)

105-107

Ultra Large Scale Integration (ULSI)

107-109

Giga- Scale Integration (GSI)

109-1011

Tera- Scale Integration (TSI)

1011-1013

Moores Law

IC 18

Integration Level

4004

1971

2,250

LSI

8008

1972

3,500

LSI

8080

1974

5,000

LSI

8086

1978

29,000

LSI

286

1982

120,000

VLSI

386

1985

275,000

VLSI

486 DX

1989

1,180,000

VLSI

Pentium

1993

3,100,000

VLSI

Pentium II

1997

7,500,000

VLSI

Pentium III

1999

24,000,000

ULSI

Pentium 4

2000

42,000,000

ULSI

: DRAM

ANALOG VS DIGITAL
(a)

Continuous-Time
Analog

(b)

Discrete-Time
Analog

(c)

Digital

Sampling
Quantizing
01 10 11 10 01 00 01 01 10 10 01 00 00 01 10 11 10 01 01 10 10 10 10 01 01 01 10

(d)

2-level
(binary)Digital


CD

DAC

DAC

2 x 44.1 KHz

(Printed Circuit Board :PCB)

Optoelec /
Thyristor
Sensors
Bipolar
FET
/
Si-BJT
Si-CMOS, JFET
A-D, D-A
GaAs-HBT GaAs-MESFET
SiGe-HBT SiGe-MOSFET

(CMOS, TTL, ECL)
Combinational logic


Adder
DSP

Power Management

Hobby elec.
IT-related

 2
2.1
2.2 :
2.3
2.4
2.5 PN
2.6 PN

 (Intrinsic Semiconductor)
-q

-q

-q
-q

-q

-q

-q

+14q

-q
-q

-q

-q
-q
-q

+4q

-q

-q
-q

-q

(q = 1.6e-19 )

-q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q
ion+

+4q

+4q

+4q

(a)
(a)

+4q

+4q

+4q

(b)
(b)

 free electron
()
(concentration) free electron

(~ 300K) free electron ~1023 /cm3.

(resistivity) 10-5W cm.
Quartz (SiO2) free electron
resistivity > 1016 Wcm.
free electron Si ~1.5x1010 cm-3 (
ionize 3 1013 !)
2x105W cm.

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

A
(+)

+4q

+4q

+4q

+4q

C
(+)

B
(+)

+4q

+4q

+4q

+4q

1. -->

2. -->

Introducing Holes
+4q

+4q

+4q

+4q

+4q

+4q

hole

hole

+4q

+4q

+4q

hole

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

hole

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

+4q

ion+

+4q

+4q

+4q

+q

(thermal ionization)

 free electron hole (carrier)

free electron hole

(recombination)
thermal equilibrium free
electron hole
n free electron concentration p hole concentration
n = p = ni ni intrinsic carrier
concentration
ni = 1.5 x1010 cm-3




free electron hole
electron
electron
hole

(diffusion)
(drift)

electric field

free electron hole

(Ohms Law)
drift
(drift current)

 (doped/extrinsic semiconductor)

(dope)


n V ( Phosphorous, Arsenic)

p III ( Boron, Gallium, Indium)

n-type semiconductor
+4q

+4q

+4q

+4q

+5q

+4q

+
+4q

+4q

(a)

+4q

(b)

V free electron

free electron thermal ionization free electron

n
free electron n (majority carrier)
V (donor atom)

p-type semiconductor
+4q

+4q

+4q

+4q

+3q

+4q

+4q

+4q

+4q

+3q

+4q

+4q

+
( )

+4q

+4q

+4q

+4q

+4q

+4q

hole thermal ionization

hole p

hole majority carrier P-type semi

III
(acceptor atom)
(c)

 (net charge) P N
p-type semi hole ion- donor atom
n-type semi free electron ion+
acceptor atom

ion+ ion-
(bound charge fixed charge)

(majority carrier)
(minority carrier)
(bound charge)

 N
+

P
-

 1
1 1 6
2 1 10