M cl c

CHNG I: L THUYT

NGH CH LU ............................................................... 2

1.1. GI I THI U NGH CH LU ................................................................................................................. 2

1.1.1 nh ngha v nghch lu .............................................................................................................. 2
1.1.2 Phn loi ...................................................................................................................................... 2
1.1.3 Cc mc p cng ra tiu chun ..................................................................................................... 2
1.1.4 ng dng ...................................................................................................................................... 2
1.2. B NGH CH LU .............................................................................................................................. 3

CHNG II: GI I THI U

N MOSFET ............................................................... 4

2.1 GI I THI U V MOSFET ........................................................................................................................ 4

2.2 PHN LO I V C U T O C B N C A VAN MOSFET............................................................................ 4
2.2.1 Phn loi ...................................................................................................................................... 4
2.2.2 Cu to c bn ca MOSFET ....................................................................................................... 6
2.3NGUYN T C L M VI C V C T NH NG C T C A VAN MOSFET .................................................... 7
2.3.1 Nguyn tc hot ng.................................................................................................................... 7
2.3.2 c tnh ng ct ca MOSFET .................................................................................................... 9
2.4 C C THNG S TH C T C A MOSFET. ............................................................................................ 11

CHNG III: PHN T CH M CH NGH CH LU P M T PHA V I U CH

I N P U RA V I B L C .................................................................................... 14
3.1 NGH CH LU
3.2 I U CH

P C U M T PHA ................................................................................................................... 14
U

AV IB

L C ....................................................................................................... 15

CHNG I : THIT K M CH NGH CH LU D NG MOSFET ........................ 16

4.1 M T S LINH KI N S D NG TRONG M CH ........................................................................................ 16
4.1.1 Ic n p ngun 78xx .................................................................................................................... 16
4.1.2 CD4047 ..................................................................................................................................... 17
4.1.3 IR2103 ........................................................................................................................................ 18
4.1.4 MOSFET IRFz44......................................................................................................................... 20
4.2 S NGUYN L V C C KH I TRONG M CH I N ............................................................................ 21
4.2.1 Khi ngun ................................................................................................................................. 21
4.2.2 Khi to xung.............................................................................................................................. 22
4.3.2 IR2103 v cu nghch lu MOSFET ............................................................................................ 23
4.2.4 S mch tng th v i dy mch in ........................................................................................ 24

Chng I : L thuyt v nghch lu

1.1. Gii thiu v nghch lu
1.1.1 nh ngha v nghch lu
Nghch lu l vic bin i nng lng in t ngun in mt chiu thnh nng lng in
xoay chiu. trong n ny chng ta ch xt n nghch lu c lp l vic nghch lu t
cc ngun mt chiu c lp nh c quy .
1.1.2 hn loi:
a. Theo tham s iu khin ng ra :

B nghch lu p : iu khin p ra
B nghch lu dng: iu khin dng ra

b. Theo tnh cht ngun :

B nghch lu p ngun p
B nghch lu dng ngun dng
B nghch lu dng ngun p
B nghch lu p ngun dng

c. Theo qu trnh chuyn mch :

B nghch lu vi:

QTCM cng bc : linh kin c kh nng kch ng v ngt (MOSFET, BJT, IGBT,

GTO)

QTCM ph thuc : linh kin ch kch ng, qu trnh ngt ph thuc p ngun hoc
ti

(Thyristor)
1.1.3 Cc mc p cng ra tiu chun:
1 pha 120V / 60 Hz

220V/50Hz 115V/400 Hz

3 pha 120/208/60 Hz 220/380/50Hz 115/200/400 Hz

1.1.4 ng dng:

B bin tn ( truyn ng ng c in xoay chiu )

L cm ng trung tn , hn trung tn

Ngun xoay chiu trong gia nh , ngun lu in (UPS), chiu sng (n hunh
quang cao tn)
B nhuyn cng sut phn khng
Truyn ti in cao p mt chiu (HVDC)

1.2. B nghch lu p :
Ngun in p 1 chiu : c th l acquy ( bnh ) , pin in hoc t ngun in p xoay chiu
c chnh lu v lc phng.
Linh kin b nghch lu : c kh nng kch ng v kch ngt nu qu trnh chuyn mch l
cng bc, hoc Thyristor nu qu trnh chuyn mch l ph thuc :

Cng sut nh v va : s dng cc kho BJT , MOSFET, IGBT

Cng sut ln : IGBT, GTO, Thyristor + B chuyn mch (chuyn mch cng
bc) hoc Thyristor thng nu qu trnh chuyn mch ph thuc.
Diode mc i song: To thnh mch chnh lu cu khng iu khin c chiu
dn ngc li, cho php trao i cng sut o gia ti xoay chiu vi ngun mt
chiu v hn ch qu p khi kch ngt cc cng tc (chc nng bo v linh kin).

in p ra c th gi khng i hoc thay i c tn s gi c nh hoc thay i c.

in p ra c iu khin bi vic iu chnh gi tr in p ngun DC nu gi li (gain)
b nghch lu khng i. Nu ngun DC c tr s c nh khng i th in p ra thay i
bng cch thay i li ca b nghch lu ( v d bng phng php iu bin rng
xung) . li c nh ngha l t s gia in p ra AC v in p vo DC. in p ng
ra ca mt b nghch lu l tng phi c dng sin. Tuy nhin dng sng ca cc b nghch
lu trn thc t l khng c dng sin chun (do linh kin nghch lu l cc kho lm vic
ch ng ct) v cha cc sng hi bc cao. Cc sng hi ny c th gy ra nhiu di
dng lan truyn trong cp dn hoc dng tia do bc x sng in t, gy cc nh hng khng
tt n ti, ngun v mng vin thng. V vy cc bin php s dng chng nhiu l cn
thit : v d cc b lc ngun, thit b nghch lu c t trong t kim loi, s dng cp
bc. Vi s ng dng cc linh kin in t cng sut tn s ng ngt cao, thnh phn hi bc
cao ca p ra c th b loi b hoc gim bt ng k bng k thut ng ngt. Cc thut ton
PWM ti u c xut phn ln u xt n kha cnh sng hi.

Chng II : Gii thiu v van MOSFET

2.1 Gii thiu v Mosfet
Mosfet l Transistor hiu ng trng ( Metal Oxide Semiconductor Field Effect Transistor )
l mt Transistor c bit c cu to v hot ng khc vi Transistor thng thng m ta
bit, Mosfet c nguyn tc hot ng da trn hiu ng t trng to ra dng in, l linh
kin c tr khng u vo ln thch hn cho khuych i cc ngun tn hiu yu, Mosfet
c s dng nhiu trong cc mch ngun Monitor, ngun my tnh .

Hnh 2.1 Transistor hiu ng trng Mosfet

hn loi v cu to c bn ca MOSFET

2.2

2.2.1 hn loi
Transistor trng MOS c hai loi:
1. transistor MOSFET c knh sn
2. transistor MOSFET knh cm ng.
Trong mi loi MOSFET ny li c hai loi l knh dn loi P v knh loi N .

MOSFET knh sn

Transistor trng MOSFET knh sn cn gi l MOSFET-ch ngho (Depletion-Mode

MOSFET vit tt l DE-MOSFET).Transistor trng loi MOS c knh sn l loi transistor
m khi ch to ngi ta ch to sn knh dn

Hnh 2.2 : Cu to v k hiu ca DE-MOSFET

MOSFET knh cm ng

Transistor trng loi MOS knh cm ng cn gi l MOSFET ch giu (EnhancementMode MOSFET vit tt l E-MOSFET). Khi ch to MOSFET knh cm ng ngi ta khng
ch to knh dn. Do cng ngh ch to n gin nn MOSFET knh cm ng c sn xut
v s dng nhiu hn.

Hnh 2.3 : Cu to v k hiu ca E-MOSFET

2.2.2 Cu to c bn ca MOSFET

Cu to c bn v k hiu
mch ca MOSFET knh
n c cho hnh 2.4.
Phn chnh ca mt
MOSFET c cu trc nh
hai bn cc ca mt t
in: mt bn kim loi
pha trn c ni vi
chn ra gi l chn Cng
[Gate] G, bn cc pha
di l phin lm bng
vt liu bn dn Si tp
dng p, i khi c
ni vi cc ngun bn
trong MOS (MOS ba
chn), nhng phn ln,
cc c ly ra bng
mt chn th t c tn l
chn [Bode] B, (c khi
cn gi l cc SS
[Substrate]) c th cho
php iu khin bi mc
in th ca n t bn
ngoi. Lp in mi ca
t chnh l lp cch in
rt mng di xit Silicon
(SiO2), do cu trc nh
vy nn Cng - c
gi l cu trc ca t MOS
[Metal-OxideSemiconductor]. Cc chn
Ngun [Source] S v
Mng [Drain] D, l cc
chn c ni vi cc
vng bn dn tp dng n+
t bn trong phin , gi l vng Ngun v vng Mng tng ng. i vi mt dng c
bn dn knh n, th dng in c hnh thnh bng cc in t v vng Ngun v Mng
c cu to bi cc vng pha tp m n+(vo khong 1020 cm-3) c th tip xc tt vi
knh dn. Ngi ta dng phng php cy ion to ra vng Ngun v Mng sau khi cu
trcCng c xc lp sao cho hai vng ny thng hng vi vng Cng, v s hnh
thnhknh dn c lin tc cn phi c s chng ln gia vng Cng vi vng Ngun v
Cng vi Mng hai u knh dn. Do cu to ca dng c c tnh i xng nn Ngun v
Mng c th thay th ln nhau. Vng bn dn gia hai vng Ngun v Mng ngay pha di
Cng c gi l vng knh. Khong cch gia hai tip gip pn (vng Ngun- v vng
Mng-) l chiu di hiu dng ca knh L. v W l chiu rng ca knh. Vng l mt

bn dn tp kiu ngc li vi hai vng Ngun v Mng (thng mc pha tp long hn)
m bo cch ly gia hai vng. Lp xit (SiO2) c to ra bng cch gia nhit nhit
cao c cc c tnh b mt chung tt nht. Vt liu lm Cng thng dng nht l kim
loi hoc polysilicon. Khi chiu di knh dn bng 0,3m, th cc thng s in hnh l: chiu
dy ca lp xit 10m, mc pha tp ca vng l 3x1017cm-3, dy tip gip pn
gia Mng- v Ngun- l 0,2m. i vi mi loi knh dn, th mc ngng ca
in p cng phi thch hp c th lm bin i knh dn. Nu knh dn bin mt ti in
p cng bng 0 (tc l knh dn thng h - normally OFF) th MOSFET c gi l dng
c tng cng knh do in p cng cn phi c cho s tng cng [enhance] hay lm giu
knh dn, (hnh 3.1a, b). Nu knh l c sn ti in p cng bng 0 (tc thng kn - ON),
th MOSFET c gi l dng c ngho knh v in p cng cn cho vic lm suy kit
[deplete] hay lm ngho knh dn, (hnh 3.1b). Cc in p v dng in ca MOSFET knh
n cng c xc nh r trn hnh 3.1b.
Dng Mng iD, dng Ngun iS, dng Cng iG, v dng iB c xc nh vi chiu dng
ca dng c ch r cho mt transistor MOSFET knh n. Cc in p gia cc cc quan
trng l in p Cng-Ngun: vGS = vG - vS , in p Mng-Ngun: vDS = vD - vS , v
in p Ngun-: vSB = vS - vB . Tt c cc in p ny u c gi tr 0 trong ch hot
ng thng thng ca N MOSFET.
Ch rng: cc vng Ngun v Mng to thnh tip gip pn vi vng . Hai tip gip ny
lun lun c gi iu kin phn cc ngc c s cch ly gia cc tip gip ca
transistor MOS. V vy, in p phi nh hn hoc bng vi in p cc cc Ngun v
Mng m bo cho cc tip gip pn c phn cc ngc mt cch thch hp, tc: iB
0. Ngoi ra, Cng phi l mt bn cc kim loi c tip xc mt nhng vn c cch
in vi vng knh qua lp SiO2, hay ni cch khc l khng c kt ni in trc tip gia
cc Cng v knh dn MOSFET, nn MOSFET l mt dng c c tr khng vo rt cao,
bi v dng Cng rt nh, iG 0 cu hnh phn cc dc. V l do ny m i khi
MOSFET cn c tn gi l FET c cng cch ly hay IGFET [Insulated-Gate FET].

2.3 Nguyn tc lm vic v c tnh ng ct ca MOSFET

2.3.1 Nguyn tc hot ng
Nguyn tc hot ng ca MOSFET knh loi P v MOSFET knh loi N ging nhau nhng
cc tnh ngun cung cp ngc nhau. MOSFET knh c sn (loi N). Khi transistor lm vic
thng thng cc ngun S c ni vi ca linh kin v ni t nn US = 0. Cc in p
t vo cc chn cc ca G v cc mng D l so vi chn cc S. Cc chn cc -c cp
ngun sao cho dng in chy t cc S ti cc D, in p trn cc ca s quyt nh
MOSFET lm vic ch giu ht dn hay ngho ht dn. Khi UGS = 0 trong mch vn c
dng in cc mng (dng cc ht in t) ni gia cc S v cc D. Khi UGS > 0 in t b
ht vo vng knh i din vi cc ca lm giu ht dn cho knh, tc l lm gim in tr
ca knh do tng dng cc mng ID. Ch lm vic ny gi l ch giu ca
MOSFET. Khi UGS < 0 qa trnh xy ra ngc li, tc l in t b y ra xa knh dn lm
in tr ca knh tng ln, do vy dng cc mng ID gim. Ch ny gi l ch ngho
ht dn ca MOSFET.

Hnh 2.5 H c tuyn ra ca Mosfet knh c sn loi n

MOSFET knh cm ng (loi N).Loi MOSFET ny knh dn ch xut hin trong qu trnh
lm vic. Khi UGS = 0, knh dn khng tn ti, dng ID = 0. Khi UGS > 0 ti vng i
din cc ca xut hin cc in t t do v hnh thnh knh dn ni gia ngun v mng.
dn in ca knh ph thuc vo UGS. Nh vy, MOSFET knh cm ng ch lm vic vi
mt loi cc tnh ca UGS v ch ch giu. Di y l hnh minh ho cho cc trng
hp trn vi tng loi EMOSFET.

Hnh 2.6 Knh dn trong EMOSFET

Hnh 2.7 h c tuyn ra MOSFET knh cm ng loi N

2.3.2 c tnh ng ct ca MOSFET
Trong tranzito MOSFET c cc t in dung k sinh lm gim tc chuyn mch do cn
thi gian np v phng chng. Ta c th phn ra :
in dung cng-ngun CGS c in mi l lp oxit cch in ca cng. in dung ny t
nhy vi in p VDS
in dung cng mng CGD tnh n vng in tch khng gian hnh thnh trong vng P
di cng. in dung ny thay i nhiu vi in p VDS t mt gi tr so snh c vi CGS
khi VDS nh ( MOSFET kha ) sang gi tr nh c th b qua khi MOSFET b kha vi V DS
ln nh trn hnh
in dung mng ngun CDS nh hng t quan trng.
in dung vo : Ci = CGS + CGS

Hnh 2.8 in dung k sinh ca MOSFET

Trn hnh 2.9 cho quan h ca in p VGS theo in tch ca QG cng do dng IG khi mi.
Bt u trng thi kha VGS bng khng , VDS c gi tr E l ngun nui. Trn biu ny
ta c th phn bit ba on:
on OA ng vi in tch ca in dung vo vi in p VDS. in dung Ci hi khc vi
CGS. in tch cn cung cp cho dng in mng I c th chy qua knh ph thuc vo dng
in ny.

on AB ng vi vic gim V DS t E n VDSON. in p VGS khng thay i. in tch

cung cp dng lm thay i in p trn cc cc ca CGD. in p ny cng ln khi tr s
ban u E ca VDS ln.
on BC ng vi in tch ca in dung vo, tranzito ang dn. in dung ny bng C Gs +
CGDON c lp vi E v I. ng nt t OABC ng vi dng in I > I, ng nt chm
gch OABC ng vi in p E > E.
dp tt mt tranzito nh hnh 2.10 cho thy , phi thot cc in tch tha d (on CF),
s phng ca CGD trong khi in p gim (on FH) v s hng in ca CGS trong khi dng
in gim (on HJ). Lng in tch Q3 phi thot bng cng trong thi gian dp tt.
Ta nhn thy trong khi gim chiu dy ca lp oxit bao quanh li , ta c tranzito c in
p ngng tng i thp c th iu khin trc tip bng cc mch logic ngun nui 5V .
l cc FET (Logic Level Gate FET ), in dung CGD ca chng cao hn.

Chuyn mch ng

Ta xt trng hp MOSFET c mc ni tip vo mt ti in cm, D l diot thot, in p

t vo l E. Gi thit dng in I khng i trong qu trnh chuyn mch.
t = 0, in iu khin Vi chuyn t 0 sang E (hnh 2.11 b). in dung vo ca tranzito b
kha c np qua in tr Ri. in p VGS t ti ngng t = t1.

10

Bt u t t = t 1, dng iD tng. Khi cha t n gi tr I, diot tip tc dn v in p V DS = E.

Dng in trong diot gim t = t2.

Bt u t t = t2 dng in phc hi ca diot b sung vo I to ra mt im ca dng iD. ng

thi in p VDS gim v t gi tr VDCON.I t = t3, s chuyn mch kt thc.
in p iu khin t nht l phi bng VGS trong khong t2 v t3 , tuy nhin an ton phi
chn ln hn v sau thi im t 3, v sau thi im t 3, in dung vo ca MOSFET ang dn
tip tc np v VGS tng n E.
Thi gian chuyn mch bng tng thi gian tr do in p ngng, thi gian tng trng ca
dng in v thi gian gim in p. gim thi gian ny, vi mt MOSFET cho cn
gim in tr Ri ca mch iu khin v s dng diot nhanh c thi gian phc hi rt ngn.

Chuyn mch kha

Gi thit MOSFET nm trong mch trn hnh 2.11a nh trc. Hnh 4.39c cho cc dng in
p VGS, VDS v dng in iD, bt u t thi im t = 0, in p iu khin V i t E n
0 . in dung vo phng qua ti.
T t = 0 n t = t, cng thot in p VDS tng nhng dng iD vn bng I bi v in p trn
cc iot vn cn m. T t = t 2 n t = t3 , dng in I c chuyn t tranzito qua diot.
Tranzito b kha t =t 3, in dung vo tip tc phng a VGS = 0.
Khi gim Ri c th gim hng s thi gian ca mch phng ca in dung vo v gim thi
gian dp tt t off.

Nhn xt

Cc in dung k sinh c tr s vi trm pF, do c th nn chuyn mch rt ngn v tn s

gii hn khong vi trm kilohec.
Bin thin nhanh ca dng iD trong cc chuyn mch, nu c in cm k sinh trng mch gy
nn bin thin rt ln ca in p VDS. in p ny gim trong khong t 1 t2 v tng trong
khong t1 t3. Cn phi bo v MOSFET chng qu p khi dp tt.

2.4 Cc thng s thc t ca Mosfet.

1. Drain-to-Source Breakdown Voltage: y l in p mt chiu ln nht cho php trn
cc Drain v Source. Khi tnh ton thng ly h s an ton v in p l 1.5 tr ln.
2. Continuous Drain Current dng in mt chiu lin tc ln nht chy qua mosfet,
gii hn bi tn hao dn , thng cho 25C v 100C .
3. Pulsed Drain Current: Dng in xung ln nht chy qua mosfet, ph thuc vo
rng xung,gii hn bi din tch an ton(Safe Operating Area-SOA).Trong qu trnh
qu , van hay phi lm vic vng dng in trn nh mc ny trong thi gian
ngn, nu SOA b vi phm th phi p dng khi ng mm.

11

4. Gate-to-Source Voltage: in p iu khin gia cc Gate v Souce, thng ln nht

l 20V,thc t hay t khong 10V,khi mosfet hot ng xy ra hin tng in p
iu khin b tng cao do nh hng ca in dung k sinh gia cc Drain v
Gate,khi tnh ton nu thy in p ny tng cao cn thm mt diode zener mc gia
cc Gate v Souce.
5. Max. Power Dissipation:Cng sut tiu tn ln nht trong iu kin lm mt tt nht
v mt nhit nht nh, thng cho 25C , da vo Linear Derating Factor c
th tnh ra cng sut tiu tn nhit cc nhit khc.Cng sut tiu tn trn thc t
ph thuc ch yu vo dng ng v v iu kin lm mt, v b hn nhiu gi tr
nh mc.Vd: Loi IRF-540N, dng v TO-220, datasheet cho Max. Power
Dissipation =130W ti 25C,nhng trong iu kin lm mt cnh tn nhit v qut
cng bc tt nht th thng ch nn ly ti a 50W. Tt c cc loi van khc c
cng dng ng v ny cng khng c chn qu 50W.
6. Linear Derating Factor: H s suy gim cng sut to nhit theo nhit , khong
0.7-2.5W/C.
7. Operating Junction and Storage Temperature Range: gii hn nhit ca lp tip
gip,thng l -55 n +175C. Qu thang nhit ny van s hng.
8. Peak Diode Recovery dv/dt: Gii hn tc tng in p trn diot mc gia cc
Drain v Souce,thng <5V/ns, khi qu gi tr ny van s hng. S d c thng s
ny l v trong van tn ti cc gi tr in dung v in cm k sinh. Khi c bin thin
in p ,cc yu t ny s tng tc, to ra mt s ln ph hng cc lp tip
gip trong van.
9. Static Drain-to-Source On-Resistance: in tr biu kin trng thi dn, y l
thng quyt nh n tn hao dn, thng s ny ph thuc nhiu vo in p chu
ng ca van v nhit lp tip gip ,tng khi nhit lp tip gip tng , v tng
nhanh khi in p nh mc tng. C l y l l do ti sao mosfet t c ch to
cp in p trn 1000V.
10. Rise Time v Fall Time: thi gian chuyn mch ca van tng ng t trng thi kho
sang trng thi dn v ngc li , c trnh by trong gin di y.y l thng
s quyt nh n tn hao chuyn mch , l thng s quan trng khi nh gi cht
lng ca van, khi tnh ton mch iu khin th Rise Time v Fall Time ca xung
iu khin phi b hn cc thng s ny ca van.
11. Total Gate Charge: in tch tng cng ca cc t in k sinh trn cc Gate ti mt
gi tr Uk nht nh, thng cho 10V, y chnh l in tch m mch iu
khin(gate driver) phi np hoc x cho cc t ny trong qu trnh ng hay m
van.Bi vy m mch iu khin i khi cn c gi l Gate charge.Thng s ny
quyt nh n gi tr Ipgeak ca mch iu khin, in tch ny cng ln th Ipgeak
cng phi ln m bo cc t ny c np trong thi gian xc nh. Thng
Ipgeak trong khong 0.5-2A

12

Hnh 2.12 : Thng s trong datasheet ca IRF Z44

13

Chng III : hn tch mch nghch lu p 1 pha , iu ch p

u ra vi b lc
3.1 Nghch lu p cu mt pha

Hnh 3.1 S ngch lu cu

S gm 4 van ng lc ch yu l T1 , T2 , T3, T4 v cc it D1, D2, D3, D4 dng tr
cng sut phn khng ca ti v li v nh vy trnh c hin tng qu p u ngun.
T C c mc song song vi ngun m bo cho ngun u vo l ngun 2 chiu (ngun
mt chiu thng c cp bi chnh lu ch cho php dng i theo mt chiu). Nh vy t C
thc hin vic tip nhn cng sut phn khng ca ti, ng thi t C cn m bo cho ngun
u vo l ngun p (gi tr C cng ln ni tr cng nh , v in p u vo c san
phng).
na chu k u cp van T1, T2 dn in , ph ti c u vo ngun. Do ngun l ngun p
nn in p trn ti U1 = E . Ti thi im , T1 v T2 b kha , ng thi T3 v T4 m ra . ti s
c u vo ngun theo chiu ngc li , tc l du in p trn ti s ngc li v U1 = -E ti
thi im
. Do ti mang tnh tr cm nn dng vn gi nguyn hng c , T1, T2 b kha nn
dng phi khp mch qua D3 , D4 . Sut in ng cm ng trn ti s tr thnh ngun tr nng
lng thng qua D2, D4 v t C.
Tng t nh vy khi kha cp T3, T4 dng ti s khp mch qua D1, D2.

14

Hnh 3.2 th nghch lu cu mt pha

3.2 iu ch p u ra vi b lc
B lc LC c dng lc cc thnh phn sng hi bc cao . Mch lc LC
l mch lc c kh nng lc tt nht, c kh nng lc c nhiu tn s theo
mun. Nhc im ln nht ca mch lc l gi thnh v s vn hnh ca mch .Chng
ta bit rng cun cm c tr khng t l vi tn s (ZL = L) cn t in c tr
khng t l nghch vi tn s ngun in (ZC = 1/ C), v vy kt hp hai phn t
ny ta s c b lc . Cun cm L mc ni tip vi ti s chn li nhng thnh
phn tn s cao, t in C mc song song vi ti s cho qua (ni mat) nhng thnh
phn tn s cao m cun cm khng chn li c.

15

Hnh 3.3 Mch lc LC

Chng IV : Thit k mch nghch lu dng MOSFET

4.1 Mt s linh kin s dng trong mch
4.1.1 Ic n p ngun 78xx
Ic n p l l ic c dng trong mch ngun sau nhm c nh in p . Dng ic to in p
dng thng dng l 78xx vi xx l in p u ra .
c im :

Dng cc i c th duy tr 1A.

Dng nh 2.2A.
Cng sut tiu tn cc i nu khng dng tn nhit: 2W

Cng sut tiu tn nu dng tn nhit ln: 15W

Cng sut tiu tn trn n p ni tip c tnh nh sau:
Pd = (Ui Uo) * I
Trong :
Ui - p li vo
Uo - p li ra
I - dng s dng
Nu t Ui qu cao lm cng sut tiu tn trn IC ln s lm gim hiu sut
Tuy nhin lu cn gi p vo ln hn p ra khong 2V cho IC hot ng bnh thng. V
d dng 7805 th cn c li vo t nht l 7V.
Chnh lch p vo ra ti thiu 2V (Ui Uo) =

=2V

16

Hnh 4.1 Hnh dng v s chn ca 7805 dng chn cm TO-220AB

4.1.2 CD4047
Chc nng: to sng vung hai na chu k.

Hnh 4.2 S chn CD4047

y l ic gm 14 chn ng gi dng dip 100T. in p hot ng trongkhong t 3V n
15V. Chng ta cn quan tm ti chc nng ca cc chn sau:
1 u vo t C
2 u vo in tr R
3 u vo R-C to dao ng vi tn s nh sn
10 u ra xung vung bn chu k dng
11 u ra xung vung bn chu k m
7 cp ngun m
14 cp ngun dng
Tn s ca xung vung ra c tnh theo cng thc: T = 2.48RC
:

17

Hnh 4.3 S khi bn trong IC4047

Hnh 4.4 Cc kiu ng gi chn ca 4047

4.1.3 IR2103
IR2103 l ic chuyn dng c thit k iu khin na cu MOSFET hoc IGBT knh N.

S dng k thut bootstrap.

C th iu khin mch lc ln ti 600V.

Ngun cp t 10 V n 20 V.

Bo v thiu p.

Tng thch 3.3v , 5v, 15v logic.

Tch hp deadtime trong ic .

18

Hnh 4.5 S khi bn trong IR2103

Hnh 4.6 Cc kiu ng gi chn ca IR2103

Hnh 4.5 S kt ni IR2103 v FET iu khin na cu

19

4.1.4 MOSFET IRFz44

C hai la chn chnh cho vic s dng kho ng ct cng sut trong iu khin ng c l
MOSFET v IGBT. C hai loi MOSFET v IGBT u l linh kin c iu khin bng in
p, ngha l vic dn v ngng dn ca linh kin c iu khin bng mt ngun in p ni
vi cc gate ca linh kin thay v l dng in trong cc b nghch lu s dng transitor nh
trc y. V vy cch s dng loi linh kin ny lm cho vic iu khin tr nn d dng hn.
Thng thng MOSFET c s dng vi cc ng dng i hi tc cao, tuy nhin MOSFET
khng c kh nng chu dng in cao. Trong khi IGBT thch hp vi cc ng dng tc
thp, tuy nhin IGBT c kh nng chu c dng in cao. Vi yu cu ca n ta chn
MOSFET.
Cc yu cu chnh t ra cho linh kin s dng lm b nghch lu :
in p VDS > Vdc = 24V
Dng in qua MOSFET > dng nh mc ca ti .
Rds nh
Chu c tn s ng ngt cao.
Vi yu cu ta chn MOSFET knh N IRFz44

Vds max = 60V

Rds = 0.024
Id = 50A

Hnh 4.6 S chn IRFz449

Trn l thuyt khi c thng mch th IMOSFET=

= 24 (mA).

4.2 S nguyn l v cc khi trong mch in

4.2.1 Khi ngun

Hnh 4.7 Khi ngun

Hnh 4.7 l s nguyn l ca khi ngun trong mch.
Dng xoay chiu 220v qua bin p thnh dng xoay chiu 24v s c a vo cu it chnh
lu cu 1 pha sau a qua pha ic n p.
S dng ic n p 7824,7812,7805 mc ni tip nhau theo s c bn trong datasheet nhm
to ra mc in p dng 24v,12v v 5v.
Cc t t trc v sau ic 78xx c tc dng lc , san phng in p.
Cc n led D1,D2, D3 bo hiu ngun 5v,12v,24v. V led ch chu c dng ti a vo khong
25mA nn cn c cc tr R1, R2 , R3 hn dng.

D1 : I1 =

= 0.5 (mA)

D2 : I1 =

= 1.13 (mA)

D3 : I1 =

= 4.3 (mA)

4.2.2 Khi to xung

Hnh 4.8 Khi to xung

IC 4047 c mc theo s trn s pht ra sng vung vi hai na chu k lch pha nhau 180
. tn s hot ng l 50Hz tnh ton theo cng thc T=2,48RC ta c thng s R,C nh
sau: R=47K,C=0,1uF.
Tn hiu t 2 chn 10 v 11 s c a vo ic 74HC02 l ic tch hp 4 cng NOR nhm to ra 4
tn hiu iu khin L1, H1, L2 v H2. S d phi lm vy v mi IR2103 iu khin na cu cn
2 tn hiu iu khin 2 MOSFET.
Q
0
0
1
1

0
1
0
1

L1
1
1
0
0

H1
0
1
0
0

L2
1
0
1
0

H2
0
0
1
0

4.3.2 I 2103 v cu nghch lu MOSFET

Hnh 4.9 IR2103 iu khin na cu.

Mch cu MOSFET nghch lu s dng hai IR2103 , mi mt IR2103 iu khin 2 MOSFET.
Nh trong hnh 4.9 l IR2103 iu khin MOSFET Q1 v Q4, mch iu khin 2 MOSFET Q2
v Q3 cng tng t . Khi tn hiu HIN l mc cao th IR2103 s kch ng MOSFET Q1, cn
khi
l mc thp th MOSFET Q4 s c kch m. T C11 l t boot trap c IR2103
s dng kch ng FET Q1. S d phi dng t boot trap l v kch c FET ta cn c
VGS > 0 , vi Q4 th rt d dng v th ca cc S ca Q4 l c nh bng 0 , nhng vi FET Q1
th th ti cc S khng c nh khi Q1 dn th v RDS nn th ti S ln gn bng in p ngun l
24 V . V vy IC dng t (c np khi Q4 c kch ng ) lm ngun kch Q1 ng. S d
mch c th n gin hn khi dng 2 MOSFET khc nhau l 2 loi N v hai loi P. Tuy nhin,
mt nhc im ca MOSFET knh P l in tr dn DS ca n ln hn MOSFET loi N. V
th, d c thit k tt, MOSFET knh P trong cc mch cu H dng 2 loi MOSFET thng b
nng v d hng hn MOSFET loi N, cng sut mch cng b gim phn no. Hn na khi s
dng IR2103 iu khin 4 MOSFET li N cn c u im l c tch hp sn dead time l
vic to thi khong thi gian tr lc chuyn mch nn trnh c hin tng trng dn, hn
na nu tn hiu u vo
l mc thp v HIN l mc cao tc l yu cu c 2 MOSFET Q1
v Q4 cng dn l trng hp khng c xy ra th IR2103 s khng dn lm mch c tin
cy cao hn.

Nh vy tn hiu t khi to xung s to ra kt qu l :

Do Uti

Q
Uti
1
0
Q1, Q2 dn Uti = 24 V
0
1
Q3,Q4 dn Uti =-24 V
l dng xoay chiu 24 V c tn s 50Hz dng sng vung .

4.2.4 S mch tng th v i dy mch in

Hnh 4.10 S i dy mch in.