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1
2009 Kenneth R. Laker, update 23Sep11
BJT Biasing Cont.
I
C
=
1
o
I
C
Given the (DC bias) equations:
Assume: V
BE
=0.7V
be given and I
C
be specified. Then
compute R
E
to obtain the specified
collector current I
C
:
R
E
=o
V
B
0.7
I
C
, Let: V
B
, V
CC
ESE319 Introduction to Microelectronics
5
2009 Kenneth R. Laker, update 23Sep11
If I
C
increases due to an increase in I
S
then V
BE
will decrease; thus, limit-
ing the magnitude of the change in I
C
.
+1
R
E
I
C
I
C
=I
S
e
V
BE
V
T
and
if I
S
=> I
C
when I
C
=> V
BE
I
C
<= V
BE
I
S
insensitivity
insensitivity
if V
B
>> V
BE
V
BE
insensitivity
I
C
o
V
B
R
E
=>
ESE319 Introduction to Microelectronics
6
2009 Kenneth R. Laker, update 23Sep11
Scilab Analysis of I
C
Insensitivity to I
S
Simultaneous equations:
I
C
=I
S
e
V
BE
V
T
I
C
=o
V
B
V
BE
R
E
or: o
V
B
V
BE
R
E
=I
S
e
V
BE
V
T
If we plot the exponential function and the straight line function,
the solution values of I
C
and V
BE
for the circuit occur at their
intersection.
Let R
E
=4k D V
B
=4.7V and
(want V
B
>> V
BE
)
ESE319 Introduction to Microelectronics
7
2009 Kenneth R. Laker, update 23Sep11
Scilab Program
//Calculate and plot npn BJT bias characteristic
beta=100;
alpha=beta/(beta+1);
VsubT=0.025;
VTinv=1/VsubT;
VBB=4.7;
Re=4;
vBE=0.0:0.01:1;
iCline=alpha*(VBB-vBE)/Re;//mA.
plot(vBE,iCline);
iC=0.01:0.01:2; //mA.!
IsubS =1E-16; //mA.
for k= 1:1:8
IsubS=10*IsubS;
vBE2=VsubT*log(iC/IsubS);
plot(vBE2,iC); //Current in mA.
end
I
C
=o
V
B
V
BE
R
E
V
BE
=V
T
ln
I
C
I
S
ESE319 Introduction to Microelectronics
8
2009 Kenneth R. Laker, update 23Sep11
I
C
vs I
S
Results Plot
I
S
=10
11
I
S
=10
18
AI
C
0.1mA
Insensitive
to I
S
!
I
C
=o
V
B
V
BE
R
E
I
C
=I
S
e
V
BE
V
T
ESE319 Introduction to Microelectronics
9
2009 Kenneth R. Laker, update 23Sep11
R
E
=o
V
B
0.7
I
C
Example: =100
V
B
=4.7V
I
C
=1mA
R
E
=0.99
4.70.7
10
3
o=
100
101
0.99
I
C
=o
V
B
0.7
R
E
=
+1
10
3
A
Writing I
C
as a function of :
Assume:
100200
100
101
10
3
=0.990mAI
C
200
201
10
3
=0.995 mA
So I
C
is insensitive to changes in !
R
E
4000D
Insensitivity to Beta
+1
(V
B
V
BE
)
R
E
=o
(V
B
V
BE
)
R
E
If R
B
(+1) R
E
I
E
R
C
R
E
R
B
V
B
V
CC
If R
B
(+1) R
E
I
C
= I
B
R
B
(V
B
V
BE
)
no feedback!
I
E
ESE319 Introduction to Microelectronics
11
2009 Kenneth R. Laker, update 23Sep11
Biasing for Operating Point Stability
Quick Review
What is the purpose R
E
?
What does R
B
represent?
What is the condition on the
value of V
B
?
What is the condition on the
value of R
E
?
What is our rule of thumb for
achieving x >> y?
ESE319 Introduction to Microelectronics
12
2009 Kenneth R. Laker, update 23Sep11
Observations
R
B
= 0 is not possible, but can be approximated quite
well if the voltage source resistance is not too large,
i.e.
R
B
(+1) R
E
Ideal rule of thumb (if possible):
R
B
1
10
(+1) R
E
100
10
R
E
=10 R
E
V
B
V
BE
ESE319 Introduction to Microelectronics
13
2009 Kenneth R. Laker, update 23Sep11
Emitter-Feedback Bias Design
Voltage bias circuit
Single power supply version
R
1
R
2
V
CC
R
C
R
E
I
C
I
E
I
B
V
B
+
-
ESE319 Introduction to Microelectronics
14
2009 Kenneth R. Laker, update 23Sep11
R
Th
=R
B
=R
1
R
2
R
Th
V
Th
V
Th
=V
B
=
R
2
R
1
+R
2
V
CC
<=>
Thevenin Equivalent
ESE319 Introduction to Microelectronics
15
2009 Kenneth R. Laker, update 23Sep11
Thevenin Equivalent
Use Thevenin's theorem to simplify
base circuit:
R
Th
=R
B
=R
1
R
2
=
R
1
R
2
R
1
+R
2
=
R
1
j+1
Since we will specify V
CC
, V
B
and R
B
, the inverse is needed
for design:
1
1+j
=
V
B
V
CC
j=
R
1
R
2
j=
V
CC
V
B
1
R
1
=(1+j) R
B
V
B
=
1
j+1
V
CC
Let:
R
2
=
R
1
j
Design
Eqs.
I
B
0
V
Th
=V
B
=
R
2
R
1
+R
2
V
CC
determine
determine R
1
R
1
R
2
R
1
+R
2
=
R
1
j+1
R
2
=
R
1
j
determine R
2
I
1
ESE319 Introduction to Microelectronics
16
2009 Kenneth R. Laker, update 23Sep11
A Rule of Thumb for Single Supply Biasing
1. Choose R
T
= R
1
+ R
2
so that I
1
<< I
C
, i.e.
I
1
is about 1/10 of the desired collector (or
emitter) current (ignoring I
B
):
R
T
=R
1
+R
2
=10
V
CC
I
C
2. Use a voltage divider to give the desired
base voltage V
B
and solve for R
2
:
R
2
=R
T
V
B
V
CC
R
1
=R
T
R
2
=R
T
(1
V
B
V
CC
)
I
1
I
1
=
V
CC
R
T
=
I
C
10
V
B
+
-
V
B
=V
CC
R
2
R
T
I
1
=
V
CC
( R
1
+R
2
)
=
V
CC
R
T
3. Solve for R
1
:
I
B
0
R
1
R
2
R
C
R
E
V
CC
I
C
4. Calculate R
B
: R
B
=R
1
R
2
ESE319 Introduction to Microelectronics
17
2009 Kenneth R. Laker, update 23Sep11
I
C
R
1
R
2
R
C
R
E
V
CC
I
E
V
CB
+
-
V
B
+
-
+
-
V
Rc
Three design goals so far
R
B
( +1) R
E
V
B
V
BE
Constraint:
V
CC
=V
Rc
+V
CB
+V
B
TRADEOFF
Increase V
B
=> Reduce V
Rc
+ V
CB
V
Rc
too large => potential for saturation to reduce op-
erating range (i.e. v
C
< v
B
).
V
Rc
too small => potential for cutoff to reduce operat-
ing range (i.e. i
C
-> small or zero).
NEED A COMPROMISE!
An Unavoidable Design Tradeoff
I
1
I
C
also
I
1
I
B
ESE319 Introduction to Microelectronics
18
2009 Kenneth R. Laker, update 23Sep11
Another Useful Rule of Thumb
1/3, 1/3, 1/3 Rule
V
B
=
V
CC
3
V
Rc
=I
C
R
C
=
V
CC
3
V
CB
=V
CC
V
Rc
V
B
=
V
CC
3
V
CC
=V
Rc
+V
CB
+V
B
R
C
=
V
Rc
I
C
=
V
CC
3 I
C
R
E
=
(V
B
V
BE
)
I
E
=
(
V
CC
3
0.7V)
I
E
V
CC
R
2
R
1
+R
2
=V
B
=
V
CC
3
Design Equations
where
I
C
R
1
R
2
R
C
R
E
V
CC
I
E
V
CB
+
-
V
B
+
-
+
-
V
Rc
V
B
=V
BE
+I
E
R
E
I
1
R
2
V
BE
=0.7V
V
B
>> V
BE
V
CE
=V
Rc
V
Re
V
CC
3
V
Re
=I
E
R
E
or
I
1
=
V
CC
R
T
=
I
C
10
R
2
=R
T
V
B
V
CC
=
1
3
R
T
R
1
=R
T
(1
V
B
V
CC
)=
2
3
R
T
R
T
= R
1
+ R
2
I
1
ESE319 Introduction to Microelectronics
19
2009 Kenneth R. Laker, update 23Sep11
Biasing for Operating Point Stability
Quick Review
What is the condition on the value of V
B
?
What is the condition on the value of R
E
?
What is the purpose for R
1
& R
2
?
What happened to R
B
?
What is the constraint on the value of I
1
?
What is the 1/3, 1/3, 1/3 Rule?
I
C
R
1
R
2
R
C
R
E
V
CC
I
E
V
CB
+
-
V
B
+
-
+
-
V
Rc
I
1
I
B
ESE319 Introduction to Microelectronics
20
2009 Kenneth R. Laker, update 23Sep11
Constant Emitter Current Bias
The current mirror is used to create a current source:
1. A BJT collector is the cur-
rent source:
I
C
=I
S
e
V
BE
V
T
I
REF
I
2. A diode-connected transistor sets the
current.
3. Choose R
ref
for the desired
current:
R
ref
=
V
CC
0.7
I
REF
V
CC
0.7
I
C1
V
BE2
=V
BE1
I
O
I
REF
=I
C1
+I
B1
+I
B2
I
C1
I
E1
I
REF
=
V
CC
V
BE1
R
ref
R
ref
V
CC
I
C1
I
B1
I
B2
V
CE1
=V
BE1
4. If Q1 = Q2 then I
C2
= I
C1
=>
I
O
I
ref
matched
I
O
=I
C2
ESE319 Introduction to Microelectronics
21
2009 Kenneth R. Laker, update 23Sep11
Constant Emitter Current
If Q
1
and Q
2
have the same saturation current:
Now: V
BE1
= V
BE2
I
S1
=I
S2
And the transistors are at the same temperature: T
1
=T
2
The two collector currents set primarily by R
ref
are
equal, as long as Q2 is not saturated.
I
O
=I
C2
=I
REF
V
CC
0.7
R
ref
V
CE1
V
CE2
, the Early Effect needs to be included in simulations.
ESE319 Introduction to Microelectronics
22
2009 Kenneth R. Laker, update 23Sep11
Constant Emitter Current Early Voltage
I
C2
=I
O
I
B2
I
B1
I
C1
Assume Q1 = Q2
I
O
=I
C2
=I
S
e
V
BE
/ V
T
(1+
V
CE2
V
A
)
Early Effect
Since I
B
is not effected by V
A
, i.e.
I
B2
=
I
S
e
V
BE
/ V
T
=
I
C2
F
For Q2:
For Q1: I
B1
= I
B2
I
REF
=I
C1
+I
B1
+I
B2
=I
C1
+2 I
B
V
BE2
=V
BE1
=V
CE1
=V
BE
I
REF
=I
S
e
V
BE
/V
T
(1+
V
CE1
V
A
)+2
I
S
e
V
BE
V
T
F
=(1+
V
CE2
V
A
)
where
I
S
e
V
BE
/V
T
(1+
V
BE
V
A
)+2
I
S
e
V
BE
V
T
=
Solving for I
S
e
V
BE
/V
T
I
S
e
V
BE
/V
T
=
I
REF
1+
V
BE
V
A
+
2
I
O
=I
C2
=I
REF
1+
V
CE2
V
A
1+
V
BE
V
A
+
2
(1)
(2)
Sub (2) into (1)
R
ref
I
REF
V
CC
ESE319 Introduction to Microelectronics
23
2009 Kenneth R. Laker, update 23Sep11
Constant Emitter Current Early Voltage Cont.
I
O
=I
C2
=I
REF
1+
V
CE2
V
A
1+
V
BE
V
A
+
2
=>
I
O
I
REF
=
1+
V
CE2
V
A
1+
V
BE
V
A
+
2
Let V
A
= => Early effect is negligible
I
O
I
REF
=
1
1+
2
1
I
O
=I
REF
=>
Let V
A
= nite and V
A
= 50 V, V
BE
= 0.7 V,
=100
I
O
I
REF
= f (V
CE2
)=
1+0.02V
CE2
1.034
=0.97(1+0.02V
CE2
)
If also
=
I
REF
ESE319 Introduction to Microelectronics
24
2009 Kenneth R. Laker, update 23Sep11
We thus can use a current mirror
to provide stable control of tran-
sistor collector current. R
ref
sets
the emitter and collector currents
and the collector-ground voltage
for Q
amp
.
v
in
is the ac input voltage source.
R
B
can be any reasonable value
this is not voltage biasing!
R
ref
R
ref
R
B
V
B
V
CC
v
in
I
ref
i
E
Q
amp
Q
1
Q
2
i
E
v
in
V
CC
R
B
R
C
BJT Emitter Current Source Bias
R
C
ESE319 Introduction to Microelectronics
25
2009 Kenneth R. Laker, update 23Sep11
Summary
1
10
(+1) R
E
Recall:
V
B
=1.7V
R
C
V
CC
R
C
= 6 k
Previous
slide
R
2
ESE319 Introduction to Microelectronics
29
2009 Kenneth R. Laker, update 23Sep11
3-2 Emitter-Feedback 1/3, 1/3, 1/3 Rule Bias
V
Rc
=V
B
=
V
CC
3
=4V
R
C
=
V
Rc
I
C
=
4V
10
3
A
=4k D
R
E
=
4V0.7V
I
C
=3.3 k D
Then the voltage across R
2
is V
B
= 4 V
R
2
=
4V
10
4
A
=40 k D
4
Let's choose
R
1
=120k40k=80 k D
R
B
1
10
(+1) R
E
Recall:
R
B
=R
1
R
2
26.7 k D
1
10
( +1) R
E
33 k D
ESE319 Introduction to Microelectronics
30
2009 Kenneth R. Laker, update 23Sep11
RECALL: Bias Stability Condition Argument
I
B
I
C V
B
=I
B
R
B
+V
BE
+( +1) R
E
I
B
I
B
=
V
B
V
BE
R
B
+(+1) R
E
I
E
=(+1) I
B
I
C
= I
B
=
R
B
+(+1) R
E
(V
B
V
BE
)
I
C
= I
B
+1
(V
B
V
BE
)
R
E
=o
(V
B
V
BE
)
R
E
R
B
( +1) R
E
if
R
C
R
E
R
B
V
B
V
CC
ESE319 Introduction to Microelectronics
31
2009 Kenneth R. Laker, update 23Sep11
I
C
= I
B
=
R
B
+(+1) R
E
(V
B
V
BE
)
R
C
R
E
R
B
V
B
R
E
I
C
I
B
V
CC
= 12V
V
B
= 1.7 V
V
BE
= 0.7 V
I
C
= 1 mA
= 100
R
C
= 6k
R
E
= 1 k
R
B
= 14.5 k
= 100; I
C
= 0.873 mA
= 200; I
C
= 0.932 mA
= ; I
C
= 1 mA
= 100 & R
B
= 0 ; I
C
= 0.99 mA
3-1 Emitter-Feedback Sensitivity
ESE319 Introduction to Microelectronics
32
2009 Kenneth R. Laker, update 23Sep11
3-1 Emitter-Feedback I
S
Sensitivity
//Rule of thumb BJT bias sensitivity
Beta=100;
VsubT=0.025;
VB=1.7;
Rb=14.5;
BetaPlusRe=101;
vBE=0.0:0.01:1;
iCline=Beta*(VB-vBE)/(Rb+BetaPlusRe);//mA.
plot(vBE,iCline);
iC=0.01:0.01:2; //mA.!
IsubS =1E-16; //mA.
for k= 1:1:8
IsubS=10*IsubS;
vBE2=VsubT*log(iC/IsubS);
plot(vBE2,iC); //Current in mA.
end
Sensitivity to I
S
//3-1 Bias Scheme with Re=1 K
Re=1;
I
C
=
R
B
+( +1) R
E
(V
B
V
BE
)
ESE319 Introduction to Microelectronics
33
2009 Kenneth R. Laker, update 23Sep11
3-1 Scilab Plot (Zoomed)
I
S
=10
11
I
S
=10
18
AI
C
0.4mA
ESE319 Introduction to Microelectronics
34
2009 Kenneth R. Laker, update 23Sep11
I
S
=10
11
I
S
=10
18
AI
C
0.1mA
R
B
0
or
R
B
(+1) R
E
Compare to I
C
vs I
S
Results Plot with Ideal
Emitter Feedback (1/3,1/3,1/3 Rule)
ESE319 Introduction to Microelectronics
35
2009 Kenneth R. Laker, update 23Sep11
Conclusion
1/3, 1/3, 1/3 Rule Provides a Good Compromise Base
Voltage Bias Scheme