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MMBT2222
NPN General Purpose Amplifier
Sourced from process 19.
C
E B
SOT-23 Mark: 1B
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
On Characteristics
300
VCE(sat) VBE(sat)
V V
MMBT2222
Ta=25C unless otherwise noted Test Condition IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Min. 250 8.0 30 10 25 225 60 pF pF ns ns ns ns Max. Units
Switching Characteristics
MMBT2222
Package Dimensions
SOT-23
0.20 MIN 2.40
0.10
0.40 0.03
1.30
0.10
0.45~0.60
0.12 0.023
+0.05
0.97REF
Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. B, May 2004
TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I11