UJT 1. Cu to v c tnh ca UJT: Mt thi bn dn pha nh loi n- vi 2 lp tip xc kimloi hai u to thnh hai cc nn B1 v B2.

. Ni PNc hnh thnh thng l hp cht ca dy nhm nh ng vai tr cht bn dn loi P.Vng P ny nm cchvng B1 khong 70% so vi chiu di ca hai cc nnB1,B2. Dy nhm ng vai tr cc pht E.

Cu to UJT

Khi cha p VEE vo cc pht E (cc pht E h) thibn dn l mt in tr vi ngun in th VBB, c khiu RBB v gi l in tr lin nn (thng c tr s t 4 K10K). T m hnh tng ng ta thy Diod c dng din t ni P-N gia vng P v vng n-. in tr RB1 v RB2din t in tr ca thi bn dn n-. Nh vy: RBB=RB1+RB2Vy in th ti im A l:Trong Cp ngun VEE vo cc pht v cc nn B1. Khi VEE = 0V, v VA c in th dng nn Diod c phn cc nghch v ta ch c mt dng in r nh chy ra t cc pht. Tng VEE ln dn, dng in IE bt u tng theo chiu dng (dng r ngc IE gim dn v trit tiu, sau dng

dn). Khi VE c tr s VE =VA +VD , VE=0,5V + VB2B1(VB1B2= VBB) th diode phn cc thun v bt u dn in mnh.in th VE= 0,5V + VB2B1=VP c gi l in th nh (peak-point voltage) ca UJT. Khi VE=VP, ni P-N phn cc thun, l trng t vng phtkhuch tn vo vng n-v di chuyn n vng nn B1, lc l trng cng ht cc in t t mass ln. V dn in cacht bn dn l mt hm s ca mt in t di ng nnin tr RB1 gim. Kt qu l lc dng IE tng v in thVE gim. Ta c mt vng in tr m.

in tr ng nhn t cc pht E trong vng in tr m l rd= -VE/IEKhi IE tng, RB1 gim trong lc RB2 t b nh hng nn in tr lin nn RBB gim. Khi IE ln, in tr lin nn RBB ch yu l RB2. Kt thc vng in tr m l vng thung lng, lc dng IE ln v RB1 qu nh khng gim na (ch l dng ra cc nn B1) gm c dng in lin nn B cng vi dng pht IE ) nn VE khng gim m bt u tng khi I tng. Vng ny c gi l vng bo ha. Nh vy ta nhn thy: Dng nh IP l dng ti thiu ca cc pht E t UJT hot ng trong vng in tr m. Dng in thung lng IV l dng in ti a ca IE trong vng in tr m. Tng t, in th nh VP l in th thung lng VV l in th ti a v ti thiu ca VEB1 t UJT trong vngin tr m. Trong cc ng dng ca UJT, ngi ta cho UJT hot ng trong vng in tr m. Mun vy, ta phi xc nh in tr RE IP<IE<IV Th d trong mch sau y, ta xc nh tr s ti a v ti thiu ca RE Cc thng s k thut ca UJT v vn n nh nhit cho nh: in tr lin nn RBB: l in tr gia hai cc nn khi cc pht h. RBB tng khi nhit tng theo h s 0,8%/1oC T s

T s ny cng c nh ngha khi cc pht E h. in th nh VP v dng in nh IP. VP gim khi nhit tng v in th ngng ca ni PN gim khi nhit tng. Dng IP gim khi VBB tng. in th thung lng VV v dng in thung lng IV . C VV v IV u tng khi VBB tng in th cc pht bo ha VEsat: l hiu in th gia cc pht E v cc nn B1 c o IE=10mA hay hn v VBB 10V. Tr s thng thng ca VEsat l 4 volt (ln hn nhiu so vi diod thng). n nh nhit cho nh: in th nh VP l thng s quan trng nht ca UJT. Nh thy, s thay i ca in th nh VP ch yu l do in th ngng ca ni PN v t s thay i khng ng k. Ngi ta n nh nhit cho VP bng cch thm mt in tr nh R2 (thng khong vi trm ohm) gia nn B2 v ngun VBB. Ngoi ra ngi ta cng mc mt in tr nh R1 cng khong vi trm ohm cc nn B1 ly tn hiu ra.

R Emax = R Emin =

V V VP VBB VP = BB = I 0 IP IP V V V V V = BB V = BB V I 0 IV IV

VBB VV V VP RE BB IV IP

Khi nhit tng, in tr lin nn RBB tng nn in th lin nn VB2B1. Chn R2 sao cho s tng ca VB2B1 b tr s gim ca in th ngng ca ni PN. Tr ca R2 c chn gn ng theo cng thc:

Ngoi ra R2 cn ph thuc vo cu to ca UJT. Tr chn theo thc nghim khong vi trm ohm ng dng n gin ca UJT: ngi ta thng dng UJT lm thnh mt mch dao ng to xung. Dng mch v tr s cc linh kin in hnh nh sau:

Khi cp in, t C1 bt u np in qua in tr RE.(Diod pht-nn 1 b phn cc nghch, dng in pht I xp x bng khng). in th hai u t tng dn, khi n in th in th nh VP, UJT bt u dn in. T C1 phng nhanh qua UJT v in tr R1 in th hai u t tc (VE) gim nhanh n in th thung lng VV. n y UJT bt u ngng v chu k mi lp li. Dng UJT to xung kch cho SCR Bn k dng nu c xung a vo cc cng th SCR dn in. Bn k m SCR ngng. iu chnh gc dn ca SCR bng cch thay i tn s dao ng ca UJT.