DMV1500M

DAMPER + MODULATION DIODE FOR VIDEO

DAMPER

MODULATION

MAIN PRODUCT CHARACTERISTICS MODUL IF(AV) VRRM trr (max) VF (max) 3A 600 V 50 ns 1.4 V DAMPER 6A 1500 V 135 ns 1.65 V
1 2 3

FEATURES AND BENEFITS

s s s s s

Insulated TO-220AB (Bending option F5 available)

Full kit in one package High breakdown voltage capability Very fast recovery diode Specified turn on switching characteristics Low static and peak forward voltage drop for low dissipation Insulated version: Insulated voltage = 2500 VRMS Capacitance = 7 pF Planar technology allowing high quality and best electrical characteristics Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation

DESCRIPTION High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction. The insulated TO-220AB package includes both the DAMPER diode and the MODULATION diode. Assembled on automated line, it offers excellent insulating and dissipating characteristics, thanks to the internal ceramic insulation layer.

ABSOLUTE RATINGS (limiting values, per diode) Value Symbol VRRM IFSM Tstg Tj Parameter MODUL DAMPER Repetitive peak reverse voltage Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal 600 35 1500 75 V A C Unit

- 40 to + 150 150

July 2001 - Ed: 6A

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DMV1500M
THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Damper junction to case Modulation junction to case Parameter Value 4.8 6 Unit C/W

STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES Value Symbol Parameter Test conditions Tj = 25C Typ. VF * IR **
Pulse test :

Tj = 125C Typ. 1.2 100 Max. 1.65 1000

Unit

Max. 2.2 100

Forward voltage drop Reverse leakage current

* tp = 380 s, < 2% **tp = 5 ms, < 2%

IF = 6 A VR = 1500V

1.4

V A

To evaluate the maximum conduction losses of the DAMPER diode use the following equations : 2 P = 1.37 x IF(AV) + 0.047 x IF (RMS)

STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE Value Symbol VF * IR **

Pulse test :

Parameter Forward voltage drop Reverse leakage current

* tp = 380 s, < 2% ** tp = 5 ms, < 2%

Test conditions IF = 3A VR = 600V

Tj = 25C Typ. Max. 1.8 20

Tj = 125C Typ. 1.1 3 Max. 1.4 50

Unit V A

To evaluate the maximum conduction losses of the MODULATION diode use the following equations : 2 P = 1.12 x IF(AV) + 0.092 x IF (RMS)

RECOVERY CHARACTERISTICS OF THE DAMPER DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 750 Max. Unit ns

trr

Reverse recovery time

Tj = 25C

110

135

ns

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DMV1500M
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE Symbol trr Parameter Reverse recovery time Test conditions IF = 100mA IR = 100mA IRR = 10mA IF = 1A dIF/dt = -50A/s VR = 30V Tj = 25C Value Typ. 110 Max. 350 Unit ns

trr

Reverse recovery time

Tj = 25C

50

ns

TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 6A dIF/dt = 80A/s VFR = 3V IF = 6A dIF/dt = 80A/s Tj = 100C Value Typ. 570 Max. Unit ns

VFP

Peak forward voltage

Tj = 100C

21

28

TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE Symbol tfr Parameter Forward recovery time Test conditions IF = 3A dIF/dt = 80A/s VFR = 2V IF = 3A dIF/dt = 80A/s Tj = 100C Value Typ. Max. 240 Unit ns

VFP

Peak forward voltage

Tj = 100C

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DMV1500M
Fig. 1-1: Power dissipation versus peak forward current (triangular waveform, = 0.45) (damper diode).
PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0

Fig. 1-2: Power dissipation versus peak forward current (triangular waveform, = 0.45) (modulation diode).
PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0

Ip(A) 0 1 2 3 4 5 6

Ip(A) 0 1 2 3 4 5 6

Fig. 2-1: Average forward current versus ambient temperature (damper diode).

Fig. 2-2: Average forward current versus ambient temperature (modulation diode).

IF(av)(A) 8 7
Rth(j-a)=Rth(j-c)

IF(av)(A) 4.0 3.5

Rth(j-a)=Rth(j-c)

6 5 4 3 2 1 0 0
=tp/T
T

3.0 2.5 2.0 1.5 1.0

tp T

Tamb(C) 50 75 100 125 150

0.5 0.0 0

=tp/T

tp

Tamb(C) 50 75 100 125 150

25

25

Fig. 3-1: Forward voltage drop versus forward current (damper diode).

Fig. 3-2: Forward voltage drop versus forward current (modulation diode).

IFM(A) 15.0
Typical Tj=125C

10.0
Maximum Tj=125C

Maximum Tj=25C

5.0 VFM(V) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

IFM(A) 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0

Typical Tj=125C

Maximum Tj=125C

Maximum Tj=25C

VFM(V)

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

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DMV1500M
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode).

K=[Zth(j-c)/Rth(j-c)] 1.0
= 0.5

IM(A) 40 35 30 25 20 15
T
Tc=100C

0.5
= 0.2 = 0.1

0.2
Single pulse

10
tp

IM t

tp(s) 0.1 1E-3 1E-2 1E-1

=tp/T

5 0 1E-3

=0.5

t(s) 1E-2 1E-1 1E+0

1E+0

Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode).

Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode).

IM(A) 30 25 20 15 10 5
IM t

Tc=100C

0 1E-3

=0.5

t(s) 1E-2 1E-1 1E+0

Qrr(nc) 1000 IF= 6A 900 90% confidence Tj=125C 800 700 600 500 400 300 200 100 0 0.1 0.2

dIF/dt(A/s) 0.5 1.0 2.0 5.0

Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode).

Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode).

Qrr(nC) 200
IF= 3A 90% confidence Tj=125C

IRM(A) 2.0 IF= 6A 1.8 90% confidence Tj=125C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 0.2

150 100 50 dIF/dt(A/s) 0 0.1 1.0 10.0 100.0

dIF/dt(A/s) 0.5 1.0 2.0 5.0

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DMV1500M
Fig. 7-2: Reverse recovery current versus dIF/dt (modulation diode). Fig. 8-1: Transient peak forward voltage versus dIF/dt (damper diode).

IRM(A) 6 5 4 3 2 1 dIF/dt(A/s) 0 1 10 100 200

IF= 3A 90% confidence Tj=125C

VFP(V) 40 35 30 25 20 15 10 5 0 0 20 40 dIF/dt(A/s) 60 80 100 120 140

IF= 6A 90% confidence Tj=125C

Fig. 8-2: Transient peak forward voltage versus dIF/dt (modulation diode).

Fig. 9-1: Forward recovery time versus dIF/dt (damper diode).

VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0
IF= 3A 90% confidence Tj=125C

tfr(ns) 800 750 700 650 600 550 500 450 400 0 20 40
IF= 6A 90% confidence Tj=125C VFR=3V

dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200

dIF/dt(A/s) 60 80 100 120 140

Fig. 9-2: Forward recovery time versus dIF/dt (modulation diode).

Fig. 10: Dynamic parameters versus junction temperature (damper & modulation diodes).

tfr(ns) 200 175 150 125 100 75 50 25 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200
IF=IF(av) 90% confidence Tj=125C Vfr=2V

VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125C] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0

VFP

IRM

Qrr

Tj(C) 20 40 60 80 100 120 140

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DMV1500M
Fig. 11: Junction capacitance versus reverse voltage applied (typical values) (damper & modulation diodes).
C(pF) 100
Tj=25C F=1MHz

10

VR(V) 1 1 10 100 200

ORDERING INFORMATION

DMV1500M

F5

LEAD BENDING (OPTION)

DAMPER AND MODULATION DIODES FOR VIDEO

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DMV1500M
PACKAGE MECHANICAL DATA TO-220AB F5 OPTION DIMENSIONS REF. A
B b2

Millimeters Min. 15.20 24.16 1.65 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 15.80 2.92 Max. 15.90 26.90 2.41 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 2.95 1.70 1.70 16.80 3.30

Inches Min. 0.598 0.951 0.064 0.393 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147 0.104 0.044 0.044 0.622 0.114 Max. 0.625 1.059 0.094 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.661 0.129

a1
C

a3 B b1 b2 C c1 c2
c2 R2 a3 R1

L F
I

A l4

a1

e F I L

l3 l2

c2 b1 e M1

c1

I2 l3 l4 M1 R1 R2

16.40 typ. 1.40 typ. 1.40 typ.

0.645 typ. 0.055 typ. 0.055 typ.

PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT

s s s

Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.

1mm

3.1mm 2.2mm

2.54mm

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DMV1500M
PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF.
B C

Millimeters Min. Typ. Max. Min. 15.90 0.598 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.20

Inches Typ. Max. 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102

b2

A
L F I A

a1 a2 B b1 b2 C c1

l4

a1

c2

c2 e F I I4 L
c1

l3
l2 a2

15.80 16.40 16.80 0.622 0.646 0.661

b1 e

l2 l3 M

s s s

Cooling method: by conduction (c) Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N.

Type DMV1500M DMV1500MF5

s

Marking DMV1500M

Package TO-220AB

Weight 2.2 g.

Base qty 50

Delivery mode Tube

Epoxy meets UL94, V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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