Thng s in Bi tp ln in t tng t 1

TNH TON CC THNG S MCH IN

KHUCH I M TN
I,S mch in:

Trong :
Q1 c 1 =260.
Q2 c 2 =200.
Q3 c 3 =45.
Q4 c 4 =45.

Argan Sv

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Thng s in Bi tp ln in t tng t 1

Vcc =12Vdc.
R t = Rloa =8 .
II. Xt ch 1 chiu => H mch ti v tr cc t in:
Ta c:
20 4 < 1 + 2 + 6 = 154 k.
=6,6k < R3+R8+R9 =37,47 K .
=>

1 8 = 275.22
=

= 6050

6
6+ 2+ 1

= 12 .

> 10 6 = 1000 .
=

100
. 12 = 7,79 =
100 + 27 + 27

phn cc cho Q2:

=> Vb2= Vcc- 0,7= 12-0,7=11,3 V.
=>
=

12 11,3
= 46,7
15

mch khch i lm vic gia ng ti tnh:

=> Chn gi tr Rv1 sao cho : Vo =0,5.Vcc=0,5.12=6V.
=>
= ( 8) =

2 0,7
8

= 49,5

=> Ic1= 49,2 uA;

Argan Sv

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Thng s in Bi tp ln in t tng t 1

=> Ib1 =

= 0,19

Ic1 = I(R3)+ Ib2 ;

=> Ib2 = Ic1- I(R3) = 49,2u-46,7u = 2,5uA;
=> Ic2=2.Ib2 = 200.2,5uA = 0,5mA.
=> Ie2=0,5mA.
M Ic2 = Ib3.
=> Ie3= (3+ 1).Ib3= 46.0,5 = 23 mA;
C I(R8) + I(R10) 23
=>U(R11) < 23.10
=>Vb4

= 0,023 1.

0,7 = 6 0,7 = 5,3 .

=>
4
5,3
=
= 11,3
9
470

M :
<

23
40

= 0,58

( 9)); =>

1=

0,7
11,3

= 62 .

Xt mch cha phn t Q4 c:

Vo=I(E4).R11+ 0,7 + I(E4).R9,
=>
=

Argan Sv

0,7 5,3
=
= 11,25
471
471

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Thng s in Bi tp ln in t tng t 1

Tham s re:

re4 =
re1=
re2=
re3=

26
( 3)

=
=
=

= 2,3

,
26

= 23

= 528
= 52
= 1,13

Xt ch xoay chiu:
Tng 1 ch khng ti:

+) Ly tn hiu ra ti cc C:
Zin = R2//R6//1(re1 + R7) = 21,3k//397k = 20,2k.
Zo 3 = 15 ;

Argan Sv

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Thng s in Bi tp ln in t tng t 1

=> Av=

= -9,82.

+)Ly tn hiu ra ti E:
Zin = 20,2k ;
Zo = R7 = 1k ;
=> Av =

= 0,654.

Xt tng 2: Ghp y ko ni tip (Ghp Dalinton).

Coi nh l 1 Tranzitor c h s khuch i in p :

= 2.3 +2 + 3 = 200.45 + 200 + 45 = 9254;
Argan Sv

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Thng s in Bi tp ln in t tng t 1

Khi khng c ti Rt:

=> Zin =2[(re2 + 3.(re3+R10)]
= 200[52 + 45.1,13 ) = 20,57 k.
Khi c ti: Rt + R10 = 9.
=> Zin = Zin + (Rt + R10) = 20,57k + 83,3k = 103,9k .
re = 2.re3 = 2.1,13 = 2,26.(Do re=Zin : (2.3) ; Zin2 2.3.re3)
=

=> Av2 =

= -0,78.

C Zin2 ca tng 2 ng thi cng ng gp vo ti ca tng 1:

V Zin2 = 103,9k
\\

=> Av1 =

= -9.

Gi s khng c tng ghp Dalinton (tng 2):

=> Av =

\\(

= 6.10 .

(Khng c kh nng khuch i tn hiu).

=>H s khuch i ton mch khi c ti:
Av = Av1.Av2 = -0,78.(-9) 7 (Ln).
=> Tn hiu khuch i ra ng pha vi tn hiu vo.
Tnh ton tn s ct di:
T C4=10uF:
4=

Argan Sv

1
2 .

1. 4

1
2 . 20,2. 10 . 10

= 0,79

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Thng s in Bi tp ln in t tng t 1

T C5= 330uF:
5=

1
2 .( 7+

1). 5

1
2 . 1,525. 10 . 33010

= 0,32

T C3= 2200uF:
3=

1
+ 10 +

2 .(

3). 3

1
2 . 10,13.220010

= 7,15

=> Tn s ct di:
Fclow = 7,15 Hz.
Cng sut:
Vinp = 20mv, f=1khz.
Voutp = 20mv.7 = 0,14 V;
=

=>

,
.

= 1,225

Ilp= 0,14/8 = 17,5mA.

=

= 11,15

=> Pidc = Vcc.Idc = 12.11,35mV = 134mW.

=> =

. 100 = 0,91 %.

Bng so snh gi tr l thuyt vi m phng trn phn mm Proteus.

t

L thuyt

M phng

Ib1
Vb1
Vc2
Vb2

0,19uA
7,79V
12V
11,3V

0,19uA
7,76V
11,9598V
11,3V

Argan Sv

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Thng s in Bi tp ln in t tng t 1

I(R8)
Rv1/
Vo
Vb4
V(E4)

Argan Sv

49,2uA
62/ 6V

52,2uA
68/ 6,015V

5,3V
6V

5,32V
5,959V

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