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Condensed Matter Theory Paul Scherrer Institute CH-5232 Villigen PSI Switzerland
U.Aeberhard
Outline
Introduction
Microscopic model
Results
Conclusions
U.Aeberhard
p-i-n QW photodiode
L E electrons z holes
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
1
L E electrons z holes
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
1
L E electrons z holes
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
3
2
1
L E electrons z holes
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
3
2
1
L E electrons z holes
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
3
2
1
L E electrons z holes
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
3 2 4
1
L E electrons z holes
5 6
R V bias
Generation and recombination 1. Photogeneration of electron-hole pairs between connement levels 5. Radiative recombination 6. Nonradiative recombination (Auger-/trap)
Transport 2. Resonant and nonresonant tunneling 3. Thermal escape from quantum wells and sweep out by built in electric eld 4. Relaxation by inelastic phonon scattering
U.Aeberhard
p-i-n QW photodiode
3 2 4
1
L E electrons z holes
5 6
R V bias
Why study QWSC? + multi-gap photovoltaic device + tunable absorption edge optimized absorption potential photocurrent and overall efciency enhancement (K.Barnham & G.Duggan, JAP 67, 3490 (1990); Barnham et al., Physica E 14, 27 (2002))
U.Aeberhard
Existing models:
Generation: absorption coefcient from wave function for conned states (QW) and bulk (above QW) Carrier escape : thermoionic emission, tunneling calculations, escape lifetime models Transport: macroscopic models (drift-diffusion)
U.Aeberhard NEGF modelling of QWSC
MPP
Isc
Generation: absorption coefcient from wave function for conned states (QW) and bulk (above QW) Carrier escape : thermoionic emission, tunneling calculations, escape lifetime models Transport: macroscopic models (drift-diffusion)
U.Aeberhard NEGF modelling of QWSC
MPP
Isc
Generation: absorption coefcient from wave function for conned states (QW) and bulk (above QW) Carrier escape : thermoionic emission, tunneling calculations, escape lifetime models Transport: macroscopic models (drift-diffusion)
U.Aeberhard NEGF modelling of QWSC
MPP
Isc
Generation: absorption coefcient from wave function for conned states (QW) and bulk (above QW) Carrier escape : thermoionic emission, tunneling calculations, escape lifetime models Transport: macroscopic models (drift-diffusion)
U.Aeberhard NEGF modelling of QWSC
U.Aeberhard
U.Aeberhard
Hamiltonian
Total Hamiltonian for p-i-n QWSC (radiative limit) H = H0 + Hint , Hint = Hep + He
H0 : kinetic energy, bandstructure effects, Hartree potential ballistic transport Hep : electron-phonon interaction
harmonic approximation acoustic (elastic) polar optical (inelastic)
GA = (GR ) .
Self energies B : boundary self energy open boundary conditions, effects of extended
and highly doped leads, injection from reservoirs +
U.Aeberhard
L,R
R,B
Dysons equation
GR
Keldysh equation
self-energy equations
, R
no converged?
yes
n, p, J
U.Aeberhard
converged? no
R,B L,R
yes
Output
Dysons equation
GR
Keldysh equation
G
Poissons equation
self-energy equations
, R
no converged? yes
n, p, J
U.Aeberhard
LDOS: L (E) =
A = i(GR GA )
(spectral function)
0.5
E[eV]
-0.5
-1
1e+25
2e+25
3e+25
4e+25
5e+25
6e+25
7e+25
8e+25
9e+25
LDOS [m-3eV-1]
Photocurrent response
0.0003
9e+25
8e+25
0.00025
7e+25
0.0002
6e+25
LDOS [m ]
Jphot/Fphot
5e+25
0.00015
4e+25
0.0001
3e+25
2e+25
5e05
1e+25
0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
0
1 0.5 0 0.5 1
Ephot [eV]
E [eV]
U.Aeberhard
Photocurrent response
0.0003
9e+25
8e+25
0.00025
7e+25
0.0002
6e+25
LDOS [m ]
Jphot/Fphot
1 5e+25
0.00015
4e+25
0.0001
3e+25
2e+25
5e05
1e+25
0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
0
1 0.5 0 0.5 1
Ephot [eV]
E [eV]
U.Aeberhard
Photocurrent response
0.0003 2
9e+25
8e+25
0.00025
7e+25
0.0002
6e+25
LDOS [m ]
Jphot/Fphot
1 5e+25
0.00015
4e+25
0.0001
3e+25 2 2e+25
5e05
1e+25
0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
0
1 0.5 0 0.5 1
Ephot [eV]
E [eV]
U.Aeberhard
Photocurrent response
0.0003 2 3 0.00025
9e+25
8e+25
7e+25
0.0002
6e+25
LDOS [m ]
Jphot/Fphot
1 5e+25
0.00015
4e+25
0.0001
3e+25 2 2e+25
5e05
3 1e+25
0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
0
1 0.5 0 0.5 1
Ephot [eV]
E [eV]
U.Aeberhard
Photocurrent response
0.0003 2 3 0.00025
9e+25
8e+25
7e+25
4 0.0002
6e+25
LDOS [m ]
Jphot/Fphot
1 5e+25
0.00015
4e+25
0.0001
3e+25 2 2e+25
5e05
3 1e+25 4
0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
0
1 0.5 0 0.5 1
Ephot [eV]
E [eV]
U.Aeberhard
Current:
3000
Jn(p)L =
2000
1000
J [mA/m2 ]
1000
2000
3000
4000
Vbias [V]
U.Aeberhard NEGF modelling of QWSC
60
50
40
2 J [mA/meV]
0
2 J [mA/m]
30
1000 2000
20
10
3000
0
4000
10 0.4
0.6
0.8
1.2 E [eV]
1.4
1.6
1.8
5000
0.7
0.6
0.5
0.3
0.2
0.1
Low bias ( equilibrium): low dark current & small tunneling barrier vs. low level occupation
U.Aeberhard
2500
3000
2000
2000
1000
1500
2 J [mA/meV]
1000
2 J [mA/m]
1000
500
2000
3000
0
4000
500 0.8
1.2
1.4 E [eV]
1.6
1.8
5000
0.7
0.6
0.5
0.3
0.2
0.1
high bias < Voc : increased dark current & thicker barrier overcompensated by higher thermoionic emission
U.Aeberhard
1500
3000
1000
1.1
1.2
1.3
1.4 E [eV]
1.5
1.6
1.7
1.8
1.9
5000
0.7
0.6
0.5
0.3
0.2
0.1
U.Aeberhard
U.Aeberhard
References
NEGF-photocurrent
(7) L.E. Henrickson, J. Appl. Phys. 91, 6273 (2002), (8) D. A. Stewart and F. Lonard, Phys. Rev. Lett. 93,107401 (2004), (9) Guo et al., Appl. Phys. Lett. 88, 133111 (2006).
U.Aeberhard