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FDS4435BZ P-Channel PowerTrench MOSFET

April 2009

FDS4435BZ
P-Channel PowerTrench MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of 3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant

General Description
This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G

MOSFET Maximum Ratings TA = 25C unless otherwise noted


Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25C TA = 25C (Note 1a) (Note 1b) (Note 4) TA = 25C (Note 1a) Ratings -30 25 -8.8 -50 2.5 1.0 24 -55 to +150 Units V V A W mJ C

Thermal Characteristics
RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 25 50 C/W

Package Marking and Ordering Information


Device Marking FDS4435BZ Device FDS4435BZ Package SO-8 Reel Size 13 Tape Width 12mm Quantity 2500units

2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted


Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250PA, VGS = 0V ID = -250PA, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -21 1 10 V mV/C PA PA

On Characteristics
VGS(th) 'VGS(th) 'TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250PA ID = -250PA, referenced to 25C VGS = -10V, ID = -8.8A VGS = -4.5V, ID = -6.7A VGS = -10V, ID = -8.8A, TJ = 125C VDS = -5V, ID = -8.8A -1 -2.1 6 16 26 22 24 20 35 28 S m: -3 V mV/C

Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1385 275 230 4.5 1845 365 345 pF pF pF :

Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain Miller Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -15V, ID = -8.8A VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6: 10 6 30 12 28 16 5.2 7.4 20 12 48 22 40 23 ns ns ns ns nC nC nC nC

Drain-Source Diode Characteristics


VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -8.8A (Note 2) -0.9 29 23 -1.2 44 35 V ns nC IF = -8.8A, di/dt = 100A/Ps

NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


50
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

4.0
VGS = -10V VGS = -5V
VGS = -3.5V

3.5 3.0

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

-ID, DRAIN CURRENT (A)

40 30 20 10

VGS = -4.5V

VGS = -4.5V

2.5
VGS = -4V VGS = -5V

VGS = -4V VGS = -3.5V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

2.0 1.5
VGS = -10V

1.0 0.5 0 10 20 30 40 50
-ID, DRAIN CURRENT(A)

0 0 1 2 3 4
-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage


60
SOURCE ON-RESISTANCE (m:)

1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

1.4 1.2 1.0 0.8 0.6 -75

ID = -8.8A VGS = -10V

ID = -8.8A

PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX

50 40 30 20
TJ = 25oC TJ = 125oC

rDS(on), DRAIN TO

-50

-25

25

50

75

100 125 150


o

10 2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. Normalized On- Resistance vs Junction Temperature


50
-IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A)

Figure 4. On-Resistance vs Gate to Source Voltage


100
VGS = 0V

40 30 20
TJ = 150oC VDS = -5V

10 1 0.1 0.01 0.001


TJ = 150oC TJ = 25oC TJ = -55oC

10
TJ = 25oC TJ =-55oC

0 1 2 3 4 5
-VGS, GATE TO SOURCE VOLTAGE (V)

0.0001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current

2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


10
-VGS, GATE TO SOURCE VOLTAGE(V) ID = -8.8A

4000
Ciss
CAPACITANCE (pF) VDD = -10V

8 6
VDD = -15V VDD = -20V

1000
Coss

4 2 0 0 5 10 15 20 25 30
Qg, GATE CHARGE(nC)

Crss
f = 1MHz VGS = 0V

100 0.1

10

30

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage


10
-Ig, GATE LEAKAGE CURRENT(A)
-4

20 -IAS, AVALANCHE CURRENT(A)

VDS = 0V

10

10 10 10 10 10

-5

TJ = 125oC
-6

TJ = 25oC TJ = 125oC

-7

TJ = 25oC
-8

1 0.01

-9

0.1

10

30

10

15

20

25

30

tAV, TIME IN AVALANCHE(ms)

-VGS, GATE TO SOURCE VOLTAGE(V)

Figure 9. Unclamped Inductive Switching Capability


10
-ID, DRAIN CURRENT (A)

Figure 10. Gate Leakage Current vs Gate to Source Voltage


100

-ID, DRAIN CURRENT (A)

8
VGS = -10V

10

100us 1ms

6 4 2
RTJA = 50 C/W
o

1
THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RTJA = 125 C/W TA = 25oC
o

10ms 100ms 1s 10s DC

VGS = -4.5V

0.1

0 25 50 75 100
o

125

150

0.01 0.1

10

80

TA, AMBIENT TEMPERATURE ( C)

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Maximum Continuous Drain Current vs Ambient Temperature

Figure 12. Forward Bias Safe Operating Area

2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


1000
P(PK), PEAK TRANSIENT POWER (W)

VGS = -10 V

SINGLE PULSE RTJA = 125 C/W TA = 25 C


o o

100

10

1
0.5 -4 10

10

-3

10

-2

10

-1

10

100

1000

t, PULSE WIDTH (s)

Figure 13. Single Pulse Maximum Power Dissipation


2

1
NORMALIZED THERMAL IMPEDANCE, ZTJA

DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01

PDM

0.01
SINGLE PULSE RTJA = 125 C/W
o

t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA

0.001 -4 10

10

-3

10

-2

10

-1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Transient Thermal Response Curve

2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM PowerTrench F-PFS The Power Franchise PowerXS Build it Now FRFET SM Global Power Resource Programmable Active Droop CorePLUS Green FPS QFET CorePOWER TinyBoost QS Green FPS e-Series CROSSVOLT TinyBuck Quiet Series Gmax CTL TinyLogic RapidConfigure GTO Current Transfer Logic TINYOPTO IntelliMAX EcoSPARK TinyPower EfficentMax ISOPLANAR TinyPWM Saving our world, 1mW /W /kW at a time EZSWITCH * MegaBuck TinyWire * SmartMax MICROCOUPLER TriFault Detect SMART START MicroFET TRUECURRENT* SPM MicroPak PSerDes STEALTH MillerDrive Fairchild SuperFET MotionMax Fairchild Semiconductor SuperSOT-3 Motion-SPM FACT Quiet Series SuperSOT-6 UHC OPTOLOGIC FACT OPTOPLANAR Ultra FRFET SuperSOT-8 FAST UniFET SupreMOS FastvCore VCX SyncFET FETBench VisualMax Sync-Lock PDP SPM FlashWriter * XS * Power-SPM FPS
tm
tm

tm

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40

Preliminary

First Production

No Identification Needed Obsolete

Full Production Not In Production

2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1

www.fairchildsemi.com

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