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April 2009
FDS4435BZ
P-Channel PowerTrench MOSFET
-30V, -8.8A, 20m:
Features
Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of 3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
D D D D D G S Pin 1 SO-8 S S D D 6 7 8 3 2 1 S S S D 5 4 G
Thermal Characteristics
RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 25 50 C/W
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Off Characteristics
BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250PA, VGS = 0V ID = -250PA, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -21 1 10 V mV/C PA PA
On Characteristics
VGS(th) 'VGS(th) 'TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250PA ID = -250PA, referenced to 25C VGS = -10V, ID = -8.8A VGS = -4.5V, ID = -6.7A VGS = -10V, ID = -8.8A, TJ = 125C VDS = -5V, ID = -8.8A -1 -2.1 6 16 26 22 24 20 35 28 S m: -3 V mV/C
Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1385 275 230 4.5 1845 365 345 pF pF pF :
Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain Miller Charge VGS = 0V to -10V VGS = 0V to -5V VDD = -15V, ID = -8.8A VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6: 10 6 30 12 28 16 5.2 7.4 20 12 48 22 40 23 ns ns ns ns nC nC nC nC
NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
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4.0
VGS = -10V VGS = -5V
VGS = -3.5V
3.5 3.0
40 30 20 10
VGS = -4.5V
VGS = -4.5V
2.5
VGS = -4V VGS = -5V
VGS = -4V VGS = -3.5V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
2.0 1.5
VGS = -10V
1.0 0.5 0 10 20 30 40 50
-ID, DRAIN CURRENT(A)
0 0 1 2 3 4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
ID = -8.8A
50 40 30 20
TJ = 25oC TJ = 125oC
rDS(on), DRAIN TO
-50
-25
25
50
75
10 2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
40 30 20
TJ = 150oC VDS = -5V
10
TJ = 25oC TJ =-55oC
0 1 2 3 4 5
-VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
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4000
Ciss
CAPACITANCE (pF) VDD = -10V
8 6
VDD = -15V VDD = -20V
1000
Coss
4 2 0 0 5 10 15 20 25 30
Qg, GATE CHARGE(nC)
Crss
f = 1MHz VGS = 0V
100 0.1
10
30
VDS = 0V
10
10 10 10 10 10
-5
TJ = 125oC
-6
TJ = 25oC TJ = 125oC
-7
TJ = 25oC
-8
1 0.01
-9
0.1
10
30
10
15
20
25
30
8
VGS = -10V
10
100us 1ms
6 4 2
RTJA = 50 C/W
o
1
THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RTJA = 125 C/W TA = 25oC
o
VGS = -4.5V
0.1
0 25 50 75 100
o
125
150
0.01 0.1
10
80
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VGS = -10 V
100
10
1
0.5 -4 10
10
-3
10
-2
10
-1
10
100
1000
1
NORMALIZED THERMAL IMPEDANCE, ZTJA
0.1
PDM
0.01
SINGLE PULSE RTJA = 125 C/W
o
0.001 -4 10
10
-3
10
-2
10
-1
10
100
1000
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TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM PowerTrench F-PFS The Power Franchise PowerXS Build it Now FRFET SM Global Power Resource Programmable Active Droop CorePLUS Green FPS QFET CorePOWER TinyBoost QS Green FPS e-Series CROSSVOLT TinyBuck Quiet Series Gmax CTL TinyLogic RapidConfigure GTO Current Transfer Logic TINYOPTO IntelliMAX EcoSPARK TinyPower EfficentMax ISOPLANAR TinyPWM Saving our world, 1mW /W /kW at a time EZSWITCH * MegaBuck TinyWire * SmartMax MICROCOUPLER TriFault Detect SMART START MicroFET TRUECURRENT* SPM MicroPak PSerDes STEALTH MillerDrive Fairchild SuperFET MotionMax Fairchild Semiconductor SuperSOT-3 Motion-SPM FACT Quiet Series SuperSOT-6 UHC OPTOLOGIC FACT OPTOPLANAR Ultra FRFET SuperSOT-8 FAST UniFET SupreMOS FastvCore VCX SyncFET FETBench VisualMax Sync-Lock PDP SPM FlashWriter * XS * Power-SPM FPS
tm
tm
tm
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
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