Microwave Engineering II Microwave Engineering II: Dr.-Ing. Oktay Yilmazoglu

Microwave Engineering II Microwave Engineering II
Dr.-Ing. Oktay Yilmazoglu

WS 2012/2013
1 2012 / Microwave Engineering II / Dr.-Ing. Oktay Yilmazoglu
I d t hi (I) Impedance matching (I)
I d t hi (I) Impedance matching (I)
I d t hi (II) Impedance matching (II)
Smith chart with normalized admittance Smith chart with normalized admittance
coordinates and short stub
I d t hi ith l d Impedance matching with lumped
components
Selection criteria:
1. Relation Z
L
/Z
in
2. High /Low pass
T i i li Transmission lines
T i i li (II) Transmission lines (II)
Planar Transmission Lines and
Waveguides
Conventional Transmission Lines and
Waveguides
Good for Microwave Integrated
G d f L Di t
Good for Microwave Integrated
Circuit (MIC) Applications
Good for Long Distance
Communication
l <<
Conventional Circuit
Theory
l ~
l >>
Microwave
Engineering
Optics
l l
Wireline
Coaxial
Cable
Waveguide
Fiber
Transmission Line
1

k
H
z
1
0

k
H
z
1
0
0

k
H
z
1

M
H
z
1
0

M
H
z
1
0
0

M
H
z
1

G
H
z
1
0

G
H
z
1
0
0

G
H
z
1
0
1
4
H
z
1
0
1
5
H
z
1
1
Form lations for TL Formulations for TL
C i b t t i i Comparison between transmission
lines
L t t f di l t i Loss tangent of dielectric
)
1
( tan
Q X
R
c
c
= = o
Material
c=c c
tano
c
Material
c c
r
c
0
tano
c
FR4
c
r
= 4.5
0.014
Ceramic
c 9 9
0 0001 Ceramic
c
r
= 9.9
0.0001
Teflon
c
r
= 2.2
0.0003
G A 0 002 GaAs
c
r
= 12.9
0.002
Silcon
c
r
= 11.9
0.015
Transmission Line Media Transmission Line Media
Microstrip: w, h w, h control characteristic impedance
w
w s s
coplanar
microstrip
h Semiconductor,
alumina (Al
2
O
3
)
substrate
substrate
ground plane
microstrip or coplanar
oxide
Slow wave line
oxide
s.i. substrate
active layer
=>small velocity in medium => small
Mi t i li (I) Microstrip line (I)
Mi t i li (II) Microstrip line (II)
C
L
Z =
2
0
C l li (I) Coplanar line (I)
C l li (II) Coplanar line (II)
P id ti Power considerations
in microstrip:
device
Advantage: Since ground is on the other side of substrate device can efficiently dissipate
heat through substrate.
in coplanar:
device
Device cant dissipate heat
through substrate since ground is
at the same place as the device
gnd
at the same place as the device
Microstrip equations Microstrip equations
Dielectric filled medium Dielectric filled medium
0 0
1
0
u c
= v
Propagation velocity in air:
a)
b) Capacitance per unit length C
0
(can be calculated from electrostatic theory)
c) Characteristic impedance
( )
C j G
L j R
Z
e
e
+
+
=
0
Assumption:
1
Z
LC v and C L Z with = =
0 0
/ 1 /
Dielectric filling:
Lossless or very low loss:
0 0
1
0 C v
Z =
12 - 10 ~ c
Dielectric filling:
12 10
r
c
Di l t i fill d i fill d Dielectric filled vs. air filled
r
v
d
v
c
0
=
0 0
1
0
u c
= v less than v
0
larger than C
0 r d
C C c
0
=
v
d d
Z
C
C v d
Z
c
c
0
0
0
1 1
= = =
smaller than Z
0
0 0
1
0 C v
Z =
r
r
r
d d C
c
c
c
0
(lossless)
For microstrip For microstrip
h
,
,
0
0
Z Z Z
C C C
v v v
strip d
strip d
< <
> >
< <
u
u
where
eff
Z
strip
eff
v
Z
C C
v
u
u
c
u
c
0
0
0
=
=
=
,
0
Z Z Z
strip d
< <
u eff
strip
Z
c
u
( ) 1 1
static
h <1 t f t d di
w
c ( ) 1 1 + =
r eff
q c c where q<1, geometry factor depending on
h
w
r
, c
r eff
c c < < 1
air =
0
c
r eff
most E-field lines in substrate and a
few E-field lines outside (in air)
u-strip
the field lines outside depend on
geometry w and h
GND
Designing u strip lines
Z
0
Designing ustrip lines
C C c
Z
0
u-strip
As w | Z
0
|
As c | Z |
Z
t i
eff
Z
C L Z
C C
u
c
0
/
0
0
=
=
=
/h
5
c
r
=1
10
2
As c
r
| Z
0
|
eff
strip
Z
c
u
w/h
1. Need 1. Need to to consider consider size size of of chip chip,, loss loss,, processing processing
2. 2. Metal Metal thickness thickness t t influences influences width width: :
1. Need 1. Need to to consider consider size size of of chip chip, , loss loss, , processing processing
( )
x t
w w
2
ln 1+ + =
w = real width of line
( )
t eff
w w ln 1+ + =
t
t = t = metal thickness
f
h w for h x
h
2 2
2 / > = t
t w for w x
h
2 2
2
> > =
t
t
| | |
0
; ; Z w t when
eff
C L Z
C C
eff
/
0
= c
u
Check processing for t => affects layout
3 Frequency dependence for characteristic of lines:
C L Z /
0
=
3. Frequency dependence for characteristic of lines:
( )
( )
( )
2
1
0
d
f
f
eff r
G
f
r eff
f
+
=
=
c c
c c
( )
d
f
frequency dependent not
= static dielectric constant of substrate
= dielectric constant of u strip
r
c
( ) f c frequency dependent, not
static
= dielectric constant of u strip ( ) f
eff
c
0 2
1
09 . 0 6 . 0 ,
0
0
Z G f
h
Z
d
+ = =
u
Large Z lines or thin substrate (small h) f high less dispersive (less dependent of
Large Z
0
lines or thin substrate (small h) f
d
high less dispersive (less dependent of
frequency)
4 Losses
( )
4. Losses
( )
z
e P z P
o 2
0
=
conductor loss
o
where
power as function of
distance along line
= loss
o
conductor loss
c
o
dielectric loss
d
o
Total loss:
+ ~ o o o
Total loss:
( )
( )
( )
cm
N
z P
d c
P dz
z dP
unit
2
: =
+ ~
o
o o o
The neper (unit symbol Np) is a logarithmic unit NOT SI
( )
( ) ( )
P P
z P
G V R I
d conductive
2
2
2
1
2
2
1
+ =
=
+
o
o
The neper (unit symbol Np) is a logarithmic unit. NOT SI
unit but also used for gain and loss of electronic signals.
( ) ( ) z P z P 2 2
+ = o
L i diff t t i i Losses in different transmission
line types
Microstrip
Coplanar
Slow-wave
Microstrip Lines
R L
d c
o o o + =
G
C
C d t l (I)
A ti
conductivity
Conductor loss (I)
Assumption:
f
c
, , , o o o
( ) J
1) 1 >>
h
w
bottom of u-strip line
top
( ) x J
1
Uniform current distribution (I/w) 2)
3)
cm
dB
Z w
R
c
m
S
68 . 8 ~ o
1
= R
bottom
( ) x J
2
o o
=
S
R
sheet
resistance
o
= skin depth
| |
2
1
1
= o u t f R
S
o u e
o
2
=
S
| | u f
S
equation overestimates losses by 80 %. 2 <
h
w
for
c
o
Cond ctor loss (II) Conductor loss (II)
o | as f |
(dB) c
R
h Z
0
o
o = skin depth
o | as f |
o u e
o
2
=
S
20
40
small dependence
on thickness of
metal
S
R
attenuation attenuation factor factor::
S
c
R
h Z
0
o
20
22
0.4 0.1
h
w
biggest influence of attenuation factor is height (h) of substrate
dielectric loss o o o c c e o tan =
Dielectric loss
dielectric loss
d d
o o ~ o c c e o tan
0 r d
=
dielectric dielectric loss loss tangent tangent
c c c ' ' ' = j
c
c
o
'
' '
= tan comes from j
c
o tan
380
resistivity
( )( ) cm
cm
dB
d
O p o
( ) 7 . 11 =
r
c
0.003
330
380
( )
r
( ) 4 12.
r
= c
0.001
2
( ) GHz f
10
330
2
0 h
e
1
there is a difference in losses when using Si substrate versus GaAs substrates
GaAs GaAs:: semi insulating => shouldnt be very lossy
Si Si l ( d ti ) b t d bt i hi h i ti it b t t
Si: Si: lossy (conductive) but one can nowodays obtain high resistivity substrates
( )
cm
dB
o
Very good substrate
but cannot be used for integration
of devices (need to flip chip bond)
d
o
c
o
( )
cm
10
0
10
-1
Al
2
O
3
10
-4
f
10
-2
10
-3
=> reasonable to use Si substrate
at high frequencies
cm dB/ 6 . 0
conductor loss is higher
than substrate loss at very
hi h f
10
29
2
f
g q
( )
dB
At W b d (90GH /h 0 8)
high frequency
1
Total
( )
cm
dB
o
At W-band (90GHz; w/h=0.8)
0.5
substrate losses
conductor losses
d l
w
00
ground plane
width(mm)
Radiation losses
Radiation losses: associated with higher order modes (due to discontinuities)
Radiation losses
Radiation losses: associated with higher order modes (due to discontinuities)
( )
r
f h c / ~
2
losses
Coplanar Lines
GND
central (signal) line
Microstrip Lines
GND
GND
CPW
E
E field lines distributed No ground ideally But in reality there is a bottom

GND
E-field lines distributed
along width of microstrip
No ground ideally. But in reality there is a bottom
metal due to mounting of chip.
This backside ground plane
h th i d
changes the impedance
CPW d t CPW advantages
Z
0
field
E
Z
0
c=1
H-field
s w s
c=1
c=12
1. Compatible with components such as circulators (also ferroelectrics)
Ci l t h i it (H fi ld li )
c 12
( ) s
w w
+
2 2
/
Circulators: show no reciprocity (H-field coupling)
2. Control of properties (i.e. Z
0
) from top (without h or w/h)
( )
s
w
f Z =
0
design option (independent of processing)
3. No low frequency cutoff (due to quasi TEM propagation)
CPW di d t
1 Losses higher in CPWdue to confined Efield lines
CPW disadvantages
1. Losses higher in CPWdue to confined E field lines
field E
Conductor losses in CPW:

dx
J
Z
R
S
=
2
2
1
2
o
J
1
higher in CPW due to confined E-field lines
dx
I
Z c

2
0
2
o
c
o higher in CPW versus u-strip
CPW di d t CPW disadvantages
2. Need to re-establish ground reference to avoid parasitic modes such as slot-line mode
Connection of ground lines
via air-bridges
Crossovers to avoid parasitic modes
(i e slot line mode) (i.e. slot-line mode)
air bridge
pillar
air bridge
3. no good thermal dissipation (u-strip better)
4. ohmic losses |compared with u-strip
Ex: 0.62 dB/cm versus 0.4 dB/cm
10 GHz, 50 O for u-strip
p u p
5. dispersion CPW ~ u-strip
How does finite width of GND plane
affect the line properties?
c
w s
Presence of finite GND plane
eff
c
Z
0
200
c
w
100
5
7
1 5
5
100
s
w
+
2
1.5
5
6.9
c
1.5
100
0.7 0
20
( ) s /
w w
+
2 2
( ) s /
w w
+
2 2
s
c
z
w
+ 0
Z
eff
c ,
S b t t thi k ff t Substrate thickness effect
Z
0
(O)
70
0.5
7
eff
c
2
3
50
( ) s
h
w
+
2
3
5
0.25
( )
2
30
( ) s /
w w
+
2 2
0.7 0.3
30
( ) s /
w w
+
2 2 0.7 0.3
if substrate is too thin (too close to lines) the Z
0
changes
Summarize CPW Summarize CPW
- advantage for coupling
- everything controlled from top (Z
0
not controlled by substrate) y g p (
0
y )
- ohmic losses higher
- finite GND plane (c small) has effect on Z
0
t d h i f lifi ( t d f th l di i ti ) - not a very good choice for power amplifier (not good for thermal dissipation)
Sl li Slow-wave lines
1
f
metal
insulator
1
b
1
c
freq.
dielectric
quasi TEM
2 2
2
1
p c t c
= f
semiconductor
1
2
b

2 2
, p c
1
quasi TEM
skin
effect
MIS structure
resistivity
slow wave
Slow wave modes: Slow wave modes:
10
-3
10
0
10
4
10
6
10
8
) ( cm O p
Si
GaAs
1
2
1
p c t b
b
S
f =
low frequency
low resitivity p
( l it ti ) || di i di i ||
2 1 2
2 p c t b S
f
=> vv
pp
(velocity propagation) || dimensions dimensions ||
|| b t t i pp || substrate screening
substrate acts as imperfect metal
skin-effect mode
ex: silicon substrate
Si
wave propagates at surface of metal
(skin skin effect effect)
p |
Si
substrate acts as insulator
p |
Dielectric quasi-TEM waveguide mode
ex: GaAs
GaAs
wave propagates through whole system
Slow wave
reduced phase velocity for the wave that propagates in system
Reason is because: - E-field lines primarily on top
- H-field lines penetrate the substrate
component size can be reduced
o
v
Transmission Transmission line line model model Transmission Transmission line line model model
for slow-wave line
L
No TEM mode!
C, L are independent from each other
C
C determined by
E fi ld fi ti f t i l t E-field configuration of top insulator
L determined by
H-field in semiconductor substrate
Transmission Transmission line line model (II) model (II)
:: charging time constant (possibility of response of charge) t
Transmission Transmission line line model (II) model (II)
for slow-wave line
: : charging time constant (possibility of response of charge) t
t t 2
1
= <
S
f f
For:
microstrip
a
medium 2 responds very fast:
medium 2 = isolated from field
all E-fields in medium 1 Si
b
1
b
2
1
2
SiO
2
1
1 b
a
C c ~ ) (
S
f f for <
b
L ) b b b (
=> complete coverage of substrate by field then H-field penetrats entire substrate o <
2
b If
a
b
0
L u = ) b b b (
2 1
+ =
f f
p
= <
o
f f for <
from
o < b
o
2
: =
S
recall
2
2 0
b
f f
u t
o
= <
from
o <
2
b
o u e
o :
S
recall
Transmission Transmission line line model (III) model (III) Transmission Transmission line line model (III) model (III)
for slow-wave line
1
f f if <
a
C c ~
p
1
~
S
f f if <
1
1 b
C c ~
p
o
~ f f if <
a
b
0
L u =
( ) | |
2
1
1
1 0
1 1
b
b
C L
wave slow p
c u
v = =
# less than 1 since b=b
1
+b
2
>b
1
=> v
p
smaller than v
p0
definition of v
p0
in medium 1:
1 0
1
1
c u
v =
p
in medium 2:
2 0
2
1
c u
v =
p
2 1
,
p p p
v v v <
2 0
u
ff
transition
p
1
~
S
f f =
f f
slow wave
o
f f
f f
S
<
<
transition
skin effect
dielectric
p
o
~ f f =
resistivity
f '
slow wave
p log
1
p
2
p
-- Si, Si, SiGe SiGe high frequency, high speed circuits
- phase shifters based on voltage dependent v
p
( )
( ) V C L
p
V v
1
=
voltage dependent capacitance
Attenuator with slow Attenuator with slow-
wave line
f
f
f
f
S
f
o
f
L
R
L
= e
attenuation
p
| |
) V ( 2
1 L
) V ( C L ) V (
e
e
e
e
e o + =
attenuation
| |
) V ( 2
S
) ( ) (
e e
G
S
e
o
p
Slowing Slowing
( ) V C S
S
= e
factor factor
p
v v /
0
= series, shunt resistive elements
of TRL equivalent circuit
S
G , R
p
How does attenuation of slow wave compare to other transmission line systems ?
Disadvantage
Slow-wave systems have higher attenuation
(due to low ) than other systems.
p
Ex: at 10 GHz
1 dB/cm for slow wave
versus versus
0.2 0.4 dB/cm for microstrip
larger than 1
p
v
v
0
with slow
without slow wave
larger than 1
slow slow- -wave wave
mode mode
2.64
waveguide waveguide
mode mode
with slow
wave
(GH )
f
2.59
(GHz)
f
10 100
as as , , slowing slowing ff
Slow Slow waves waves exist exist in in materials materials
that have low low pp or
46
that are operated at low low frequencies frequencies
=> but => but higher higher losses losses
2012 / Microwave Engineering II / Dr.-Ing. Oktay Yilmazoglu

Microwave Engineering II Microwave Engineering II: Dr.-Ing. Oktay Yilmazoglu

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Microwave Engineering II Microwave Engineering II: Dr.-Ing. Oktay Yilmazoglu

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Microwave Engineering II Microwave Engineering II

Dr.-Ing. Oktay Yilmazoglu

E field lines distributed No ground ideally But in reality there is a bottom

Conductor losses in CPW:

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