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DUAL CHANNEL
FEATURES Identical Channel to Channel Footprint Current Transfer Ratio (CTR) Range at IF=10 mA ILD/Q615-1: 40 80% Min. ILD/Q615-2: 63 125% Min. ILD/Q615-3: 100 200% Min. ILD/Q615-4: 160 320% Min. Guaranteed CTR at IF=1 mA ILD/Q615-1: 13% Min. ILD/Q615-2: 22% Min. ILD/Q615-3: 34% Min. ILD/Q615-4: 56% Min. High Collector-Emitter Voltage BVCEO=70 V Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection Field-Effect Stable by TRIOS (TRansparent IOn Shield) Isolation Test Voltage from Double Molded Package, 5300 VACRMS UL Approval #E52744 VDE #0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage ................................................ 6 V Forward Current ........................................... 60 mA Surge Current .................................................1.5 A Power Dissipation ...................................... 100 mW Derate Linearly from 25C ................... 1.33 mW/C Detector Collector-Emitter Reverse Voltage .................. 70 V Emitter-Collector Reverse Voltage .................... 7 V Collector Current .......................................... 50 mA Collector Current (t <1 ms) .........................100 mA Power Dissipation ...................................... 150 mW Derate Linearly from 25C........................ 2 mW/C Package Storage Temperature................... 55C to +150C Operating Temperature ............... 55C to +100C Junction Temperature.................................... 100C Soldering Temperature (2 mm distance from case bottom) ........... 260C Package Power Dissipation, ILD615.......... 400 mW Derate Linearly from 25C.................. 5.33 mW/C Package Power Dissipation, ILQ615 ......... 500 mW Derate Linearly from 25C................. 6.67 mW/C Isolation Test Voltage (t=1 sec.)........ 5300 VACRMS Creepage ............................................... 7 mm min. Clearance............................................... 7 mm min. Isolation Resistance VIO=500 V, TA=25C ............................... 1012 VIO=500 V, TA=100C ............................. 1011
.790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76)
PHOTOTRANSISTOR OPTOCOUPLER
Cathode 2 Anode 3 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) Cathode 4
4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .100 (2.54) Typ.
Cathode 4 Anode 5 Cathode 6 Anode 7 Cathode 8 .150 (3.81) .130 (3.30) .305 Typ. (7.75) Typ.
4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .100 (2.54) Typ.
DESCRIPTION The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a Withstand Test Voltage of 7500 VACPEAK and a Working Voltage of 1700 VACRMS. The binned min./max. and linear CTR characteristics combined with the TRIOS (TRansparent IOn Shield) eld-effect process make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD/Q615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specication allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at an IF=1 mA. See Appnote 45, How to Use Optocoupler Normalized Curves.
51
Characteristics, TA=25C
Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance, Junction to Lead Detector Capacitance Collector-Emitter Leakage Current, -1, -2 Collector-Emitter Leakage Current, -3, -4 Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Thermal Resistance, Junction to Lead Package Transfer Characteristics Channel/Channel CTR Match ILD/Q615-1 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio ILD/Q615-2 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio ILD/Q615-3 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio ILD/Q615-4 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio Isolation and Insulation Common Mode Rejection, Output High Common Mode Rejection, Output Low Common Mode Coupling Capacitance Package Capacitance Insulation Resistance Channel to Channel Isolation CMH CML CCM CI-O RS 500 0.8 1014 5000 5000 0.01 V/s V/s pF pF VAC VIO=0 V, f=1 MHz VIO=500 V, TA=25C VCM=50 VP-P, RL=1 k, IF=0 mA VCM=50 VP-P, RL=1 k, IF=10 mA CTRCEsat CTRCE CTRCE 160 56 100 200 90 320 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRCEsat CTRCE CTRCE 100 34 60 150 70 200 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRCEsat CTRCE CTRCE 63 22 40 80 45 125 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRCEsat CTRCE CTRCE 40 13 25 60 30 80 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRX/CTRY 1 to 1 2 to 1 IF=10 mA, VCE=5 V CCE ICEO ICEO BVCEO BVECO RTHJL 70 7 500 6.8 2 5 50 100 pF nA nA V V C/W VCE=5 V, f=1 MHz VCE=10 V VCE=10 V ICE=0.5 mA IE=0.1 mA VF VBR IF CO RTHJL 1 6 1.15 30 0.01 25 750 10 1.3 V V A pF C/W IF=10 mA IR=10 A VR=6 V VR=0 V, f=1 MHz Min. Typ. Max. Unit Condition
ILD/Q615
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Switching Times
Figure 1. Non-saturated switching timing
VCC=5 V IF=10 mA F=10 KHz, DF=50% VO RL=75
Parameter tON tR tOFF tF tPHL Propagation H-L (50% of VPP) tPHL Propagation L-H
Unit s s s s s s
Test Condition
8.6
7.2
7.4
tD
tR
tF
IF
Ta - Ambient Temperature - C
-20
20
40
60
80
100
VO
tD tR tPLH VTH=1.5 V tF
tPHL
tS
ILD/Q615
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150
Ice - Collector Current - mA 100
Rth = 500C/W
100
10
50
0 --60 -40
Ta - Ambient Temperature - C
-20
20
40
60
80
100
Figure 11. Normalization factor for non-saturated and saturated CTR TA=25C versus if
2.0
Ta = -55C
CTRNF - Normalized CTR Factor
Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) 0.5 Ta = 25C 0.0 .1 1 10 IF - LED Current - mA 100
Ta = 25C
Ta = 85C
1 10 IF - Forward Current - mA
100
Figure 12. Normalization factor for non-saturated and saturated CTR TA=50C versus if
2.0 Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) 0.5 Ta = 50C 0.0 .1 1 10 IF - LED Current - mA 100
1000
t DF = /t
100
.5
10 10-6
10 -5
10-4
10 -3
10-2
10 -1
10 0
10 1
Figure 13. Normalization factor for non-saturated and saturated CTR TA=70C versus if
2.0
CTRNF - Normalized CTR Factor
150
Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0
100
50
0.5
NCTRce(sat) Ta = 70C
0 -60
-40
80
100
0.0 .1
10
100
IF - LED Current - mA
ILD/Q615
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Figure 14. Normalization factor for non-saturated and saturated CTR TA=85C versus if
2.0
CTRNF - Normalized CTR Factor
Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0
0.5
NCTRce(sat)
Ta=100C Ta = 100C
0.0 .1 1 10 IF - LED Current - mA 100
10
RL - Load Resistor - K
2.5
tPHL - Propagation High-Low - s
10 tPHL
1.5
1 .1
1.0 100
10
10 0 10 -1 10 -2 -20
10 tPHL 1 .1
1.5
1.0 100
5 10 4 10 3 10 10 2
ILD/Q615
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