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STW20NB50

N - CHANNEL 500V - 0.22 - 20A - TO-247 PowerMESH MOSFET

TYPE STW20NB50
s s s s s s s

V DSS 500 V

R DS(on) < 0.27

ID 20 A

TYPICAL RDS(on) = 0.22 EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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DESCRIPTION Using the latest high voltage technology, SGS-Thomson has designed an advanced family of power Mosfets with outstanding performances. The new patent pending strip layout coupled with the Companys proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS


Symbol V DS VDGR V GS ID ID I DM () P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt( 1 ) T stg Tj June 1998 Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o

Value 500 500 30 20 12.7 80 250 2 4 -65 to 150 150


(1) ISD 20A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX

Unit V V V A A A W W/ o C V/ns
o o

C C 1/8

() Pulse width limited by safe operating area

STW20NB50
THERMAL DATA
R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.5 30 0.1 300 C/W oC/W o C/W o C
o

AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) Max Value 20 1000 Unit A mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF


Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 500 10 100 100 Typ. Max. Unit V A A nA

Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V

T c = 125 o C

ON ()
Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = VGS V GS = 10 V Test Conditions ID = 250 A I D = 10 A 20 Min. 3 Typ. 4 0.22 Max. 5 0.27 Unit V A

On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V

DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 10 A V GS = 0 Min. 9 Typ. 13.5 3600 460 55 4700 600 75 Max. Unit S pF pF pF

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STW20NB50
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 250 V I D = 10 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 400 V I D = 20 A V GS = 10 V Min. Typ. 32 15 85 21 37 Max. 43 21 110 Unit ns ns nC nC nC

SWITCHING OFF
Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 400 V I D = 20 A R G = 4.7 V GS = 10 V (see test circuit, figure 5) Min. Typ. 20 25 47 Max. 27 33 62 Unit ns ns ns

SOURCE DRAIN DIODE


Symbol I SD I SDM () V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A VGS = 0 700 9 25 I SD = 20 A di/dt = 100 A/s o V DD = 100 V T j = 150 C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 20 80 1.6 Unit A A V ns C A

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

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STW20NB50
Output Characteristics Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

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STW20NB50
Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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STW20NB50
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

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STW20NB50

TO-247 MECHANICAL DATA


mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134

DIM.

P025P

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STW20NB50

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. .

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